Ion beam combining method, apparatus, system, and storage medium

Abstract

The application provides an ion beam combining method, device, system and storage medium. The method comprises the following steps: providing a sample and placing the sample on a sample stage of a transmission electron microscope; controlling a first ion implanter to emit a first ion beam to a combiner along a first direction, and making the first ion beam penetrate the combiner; controlling a second ion implanter to emit a second ion beam to the combiner along a second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction and the second direction are non-parallel; based on the combiner, deflecting the transmission direction of the second ion beam from the second direction to the first direction, so that the first ion beam and the second ion beam penetrating the combiner are coaxially transmitted along the first direction to form a combined beam; based on the combined beam injected along the first direction, irradiating the sample, and controlling the transmission electron microscope to detect the irradiated sample in situ. The application adopts a combined beam irradiation method to successfully simulate neutron irradiation technology while meeting the demand of high irradiation dose.

Description

Technical Field

[0001] This application relates to the field of ion irradiation technology, and in particular to an ion beam combining method, apparatus, system and storage medium. Background Technology

[0002] Constructing high-performance, cost-effective nuclear material irradiation simulation devices is a key approach to the research and development of materials for nuclear fusion reactors. Nuclear reactors require high material lifetimes, necessitating the development of advanced materials capable of withstanding displacement per atom (dpa) doses of hundreds to thousands of atoms. However, the maximum annual irradiation dose of existing neutron irradiation technologies typically does not exceed 20 dpa, making it difficult to meet the demand for high-dose testing of target nuclear materials at the hundreds of dpa level in a short period. Against this backdrop, heavy-ion irradiation has become a feasible technology for achieving high-dose testing in a short time. However, existing ion irradiation methods typically employ a displacement approach, separating irradiation experiments from characterization, only obtaining data on the final irradiation state and failing to reveal the dynamic process of material microstructure evolution, thus limiting the quantitative analysis of irradiation damage mechanisms. Furthermore, current methods for studying ion irradiation effects utilize single-beam heavy ion irradiation to achieve high doses, but due to the limited penetration depth of heavy ions, it is difficult to truly simulate transmutation reactions induced by neutron irradiation. Summary of the Invention

[0003] This application provides an ion beam combining method, apparatus, system, and storage medium. The method uses a combined irradiation approach to successfully simulate neutron irradiation technology while meeting the requirements for high irradiation dose.

[0004] In a first aspect, this application provides an ion beam combining method applied to an ion beam combining system, the ion beam combining system including a first ion implanter, a second ion implanter, a beam combiner, and a transmission electron microscope, the method comprising: Provide a sample and place the sample on the sample stage of the transmission electron microscope; The first ion implanter is controlled to emit a first ion beam toward the combiner along a first direction, and the first ion beam penetrates the combiner. The second ion implanter is controlled to emit a second ion beam toward the beam combiner along a second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction is not parallel to the second direction; The beam combiner deflects the transmission direction of the second ion beam from the second direction to the first direction, so that the first ion beam and the second ion beam passing through the beam combiner are both transmitted coaxially along the first direction to form a combined beam. The sample is irradiated based on the combined beam injected along the first direction, and the transmission electron microscope is controlled to perform in-situ detection of the irradiated sample.

[0005] Optionally, the ion beam combining system further includes a hot cathode ion source, the first ion implanter includes a first accelerating tube, and controlling the first ion implanter to emit a first ion beam toward the combiner along a first direction includes: The first ion is generated based on the hot cathode ion source, and the first initial energy of the first ion is determined based on the high voltage extracted from the hot cathode ion source, wherein the first initial energy is between 20 and 30 kiloelectron volts. The first accelerator tube is controlled to accelerate the first ion, and the first additional energy of the first ion is determined, wherein the first additional energy is between 30 and 380 kiloelectron volts. The first ion implanter is controlled to emit a first ion beam with a first target energy toward the beam combiner along the first direction, wherein the first target energy is the sum of the first initial energy and the first additional energy, and the first target energy is between 50 and 400 kiloelectron volts.

[0006] Optionally, the ion beam combining system includes a cold cathode ion source, the second ion implanter includes a second accelerating tube, and controlling the second ion implanter to emit a second ion beam toward the combiner along a second direction includes: The second ion is generated based on the cold cathode ion source, and the second initial energy of the second ion is determined based on the extraction high voltage of the cold cathode ion source, wherein the second initial energy is between 20 and 30 kiloelectron volts. The second accelerator tube is controlled to accelerate the second ion, and the second additional energy of the second ion is determined, wherein the second additional energy is between -10 and 30 kiloelectron volts; The second ion implanter is controlled to emit a second ion beam with a second target energy toward the beam combiner along the second direction, wherein the second target energy is the sum of the second initial energy and the second additional energy, and the second target energy is between 10 and 50 kiloelectron volts.

[0007] Optionally, the ion beam combining system further includes a first beam optical element disposed between the first ion implanter and the beam combiner. Before controlling the first ion implanter to emit a first ion beam toward the beam combiner along a first direction and to allow the first ion beam to penetrate the beam combiner, the method further includes: Control the first ion implanter to emit the first ion beam along a first direction; If the first initial size of the first ion beam is greater than the exit size of the beam combiner, then the beam spot size of the first ion beam is reduced from the first initial size to the target size based on the first beam optical element, wherein the target size is smaller than the exit size of the beam combiner; A first ion beam of the target size is passed through the combiner.

[0008] Optionally, the ion beam combining system further includes a second beam optical element disposed between the second ion implanter and the beam combiner. After controlling the second ion implanter to emit a second ion beam toward the beam combiner along a second direction, the method further includes: If the second initial size of the second ion beam is larger than the exit size of the beam combiner, then the beam spot size of the second ion beam is reduced from the second initial size to the target size based on the second beam optical element, so that the first ion beam and the second ion beam are transmitted coaxially along the first direction.

[0009] Optionally, controlling the transmission electron microscope to perform in-situ detection of the irradiated sample includes: The transmission electron microscope is controlled to emit an electron beam toward the sample along a third direction to perform in-situ detection of the sample by means of the electron beam, wherein the angle between the first direction and the third direction is 53°, and the second direction is perpendicular to the third direction.

[0010] Optionally, the ion beam combining system further includes a second vacuum insert valve, which is disposed between the second ion implanter and the beam combiner. The method further includes: If the second vacuum insert valve is closed, the second ion implanter is controlled to stop emitting the second ion beam toward the combiner; If the second vacuum insert valve switches from the closed state to the open state, the second ion beam is controlled to pass through the second vacuum insert valve and be emitted to the beam combiner.

[0011] Secondly, this application provides an ion beam combining device for use in an ion beam combining system, the ion beam combining system including a first ion implanter, a second ion implanter, a beam combiner, and a transmission electron microscope, the device comprising: The first processing module is used to provide a sample and place the sample on the sample stage of the transmission electron microscope; A first control module is used to control the first ion implanter to emit a first ion beam toward the beam combiner along a first direction, and to make the first ion beam penetrate the beam combiner. The second control module is used to control the second ion implanter to emit a second ion beam toward the beam combiner along a second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction is not parallel to the second direction; The second processing module is used to deflect the transmission direction of the second ion beam from the second direction to the first direction based on the beam combiner, so that the first ion beam penetrating the beam combiner and the second ion beam are both transmitted coaxially along the first direction to form a combined beam. The third processing module is used to irradiate the sample based on the combined beam injected along the first direction, and to control the transmission electron microscope to perform in-situ detection of the irradiated sample.

[0012] Thirdly, this application also provides an ion beam combining system, comprising: Memory, used to store executable program code; A processor is configured to call and run the executable program code from the memory, causing the ion beam combining system to perform the ion beam combining method as described in any of the preceding claims.

[0013] Fourthly, a computer-readable storage medium is provided, the computer-readable storage medium storing a computer program that, when executed, implements the ion beam combining method as described in any of the preceding claims.

[0014] The beneficial effects of the technical solutions provided in some embodiments of this application include at least the following: The ion beam combining method provided in this application involves providing a sample and placing the sample on the stage of a transmission electron microscope (TEM); controlling a first ion implanter to emit a first ion beam along a first direction towards a combiner, and causing the first ion beam to penetrate the combiner; controlling a second ion implanter to emit a second ion beam along a second direction towards the combiner, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first and second directions are not parallel; based on the combiner, the transmission direction of the second ion beam is deflected from the second direction to the first direction, so that the first ion beam and the second ion beam penetrating the combiner are both coaxially transmitted along the first direction to form a combined beam; irradiating the sample based on the combined beam injected along the first direction, and controlling the TEM to perform in-situ detection of the irradiated sample. This application successfully simulates neutron irradiation technology while meeting the high irradiation dose requirements using a combined irradiation method. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic flowchart of the ion beam combining method provided in the embodiments of this application.

[0017] Figure 2 This is a first structural schematic diagram of the ion beam combining system provided in the embodiments of this application.

[0018] Figure 3 This is a schematic diagram of the second structure of the ion beam combining system provided in the embodiments of this application.

[0019] Figure 4 This is a schematic diagram of the third structure of the ion beam combining system provided in the embodiments of this application.

[0020] Figure 5 This is a schematic diagram of the ion beam combining device provided in the embodiments of this application.

[0021] Figure 6 This is a schematic diagram of the fourth structure of the ion beam combining system provided in the embodiments of this application. Detailed Implementation

[0022] To make the features and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0023] In the following description, when referring to the accompanying drawings, the same numbers in different drawings denote the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0024] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as implying or suggesting relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.

[0025] The development of materials for nuclear fusion reactors requires simulating the effects of high-dose neutron irradiation exceeding 300 dpa, but existing neutron irradiation technologies have a maximum annual dose of no more than 20 dpa, which cannot meet the requirements. Against this backdrop, heavy ion irradiation has become a feasible technology for achieving high-dose testing in a short time, but single-beam heavy ion irradiation has limitations such as shallow penetration and the inability to simulate transmutation reactions caused by neutron irradiation, such as the formation of helium bubbles.

[0026] To address the technical problems existing in related technologies, this application provides an ion beam combining method, apparatus, system, and storage medium, which are described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments.

[0027] Please see Figure 1 , Figure 1 This is a schematic flowchart of the ion beam combining method provided in the embodiments of this application. The entity executing this ion beam combining method can be an ion beam combining system; please refer to that document as well. Figures 2 to 4 The ion beam combining system may include a first ion implanter, a second ion implanter, a beam combiner, and a transmission electron microscope. The specific process of the ion beam combining method can be as follows: S101, Provide a sample and place the sample on the sample stage of the transmission electron microscope.

[0028] In this embodiment, the sample type provided is a target material for nuclear material irradiation research, such as candidate materials for the first wall of a nuclear fusion reactor, such as tungsten alloys and steel alloys; or a functional material for semiconductor and quantum device research. This sample can withstand the combined irradiation of high-energy heavy ions (50 to 400 keV) and low-energy hydrogen and helium ions (10 to 50 keV), and a transmission electron microscope can observe its microstructure, such as defects, grains, and precipitates, during the irradiation process.

[0029] Optionally, to accommodate in-situ detection using transmission electron microscopy (TEM), the sample can be fabricated into a thin sheet with a thickness ranging from tens to hundreds of nanometers. The specific thickness depends on the material density and the resolution requirements of the TEM, ensuring that the electron beam emitted by the TEM can penetrate the sample and form a clear image. The sample size must be compatible with the TEM stage, with a diameter ranging from 3 to 30 mm. The sample edges must be smooth to avoid interfering with beam transmission.

[0030] In some embodiments, the sample stage of a transmission electron microscope (TEM) is a key component connecting the irradiation system and the detection system, featuring high-precision positioning and multi-dimensional adjustment. Specifically, the sample stage can be controlled at the nanometer level to ensure that the sample center coincides with the intersection point of the required ion beam and electron beam, guaranteeing irradiation uniformity and detection accuracy. The sample stage supports translation, rotation, and tilting operations, allowing adjustment of the sample angle as needed, and is designed to match the required angle between the ion beam and electron beam to achieve the optimal observation angle.

[0031] Optionally, the transmission electron microscope (TEM) sample stage is located in a high-vacuum environment to avoid energy loss or scattering caused by the interaction of air molecules with the ion and electron beams, and to prevent sample surface oxidation from affecting the detection results. Furthermore, a temperature control module is provided corresponding to the sample stage to maintain the sample under irradiation at a specific temperature, such as in high-temperature simulations of nuclear reactor experiments.

[0032] In some embodiments, the sample is pretreated by grinding, thinning, and cleaning, and then fixed using a specialized clamp such as a copper mesh support film. Next, the sample is transferred to the stage of a transmission electron microscope (TEM) under vacuum. Finally, the sample is positioned using the TEM's positioning system, moving the sample center to the intersection of the ion and electron beams. Recording the positioning coordinates ensures experimental repeatability. It is important to note that the sample surface must be free of contaminants during the experiment to prevent the generation of volatile impurities that could affect ion beam transmission. The movement range of the sample stage must be matched to the safe zones of the ion and electron beams to prevent mechanical collisions or beam bombardment of the sample stage components, which could affect the experimental results.

[0033] S102, control the first ion implanter to emit a first ion beam toward the bundler along a first direction, and make the first ion beam penetrate the bundler.

[0034] Optionally, the first ion implanter can be a high-energy ion implantation system with a rated voltage of 400kV, which can generate and output high-energy heavy ion beams, such as krypton ions and iron ions.

[0035] In some embodiments, the ion beam combining system further includes a thermionic cathode ion source, and the first ion implanter includes a first accelerating tube. The step of controlling the first ion implanter to emit a first ion beam toward the combiner along a first direction may include: generating a first ion based on the thermionic cathode ion source and determining a first initial energy of the first ion based on the extraction high voltage of the thermionic cathode ion source, wherein the first initial energy is between 20 and 30 kiloelectron volts; controlling the first accelerating tube to accelerate the first ion and determining a first additional energy of the first ion, wherein the first additional energy is between 30 and 380 kiloelectron volts; and controlling the first ion implanter to emit a first ion beam with a first target energy toward the combiner along the first direction, wherein the first target energy is the sum of the first initial energy and the first additional energy, and the first target energy is between 50 and 400 kiloelectron volts.

[0036] Specifically, the first ion implanter is equipped with a hot cathode ion source with an extraction voltage of 20 to 30 kV. The hot cathode ion source is the core of the first ion generation. It generates thermionic electrons by heating the cathode, which collide with gaseous substances such as krypton or solid substances such as iron that have been heated, evaporated, or sputtered, generating a mixed ion cluster including target heavy ions such as krypton ions and iron ions. The hot cathode ion source separates the ionized ions from the hot cathode ion source by applying an extraction voltage of 20 to 30 kV. The energy obtained by the first ion at this point is the initial energy of 20 to 30 keV, which ensures that the first ion has initial kinetic energy and can enter the subsequent acceleration stage.

[0037] It should be noted that the mixed ion clusters generated by the hot cathode ion source contain impurity ions. These are screened by an analytical magnet. The magnetic field deflects ions with different mass-to-charge ratios in different ways, retaining only the target heavy ions and removing impurity ions to ensure the purity of the first ions entering the first accelerating tube.

[0038] Specifically, the first accelerating tube is an atmospheric electrostatic high-voltage accelerating tube, composed of four cascaded standard accelerating sections. Its core function is to perform secondary acceleration on the first ions through a high-voltage electric field, imparting the first ions with initial additional energy. The high-voltage output of the first accelerating tube can be adjusted within the range of 30 to 380 kV, and the increase in kinetic energy gained by the first ions in the high-voltage electric field is the initial additional energy of 30 to 380 keV. For example, when the first accelerating tube applies a 380 kV high voltage, the first additional energy gained by the first ions is 380 keV.

[0039] Understandably, the first target energy of the first ion beam is the sum of the first initial energy and the first additional energy. The first target energy is between 50 and 400 keV. This energy range ensures that the first ion beam has the high-energy characteristics required to simulate neutron irradiation displacement damage, such as cascade damage effects.

[0040] In some embodiments, the first direction is the transmission axis of the first ion beam emitted by the first ion implanter to the beam combiner. The first direction of the first ion beam transmission is not parallel to the second direction of the second ion beam transmission. For example, the angle between the first direction and the second direction is 37°. The size of this angle is determined by the deflection requirements of the beam combiner and is not specifically limited here.

[0041] It should be noted that if the angle between the first direction and the third direction from which the electron beam is emitted by the transmission electron microscope is too large, the observation angle will be limited. If the angle is too small, it may cause secondary particles to interfere with the transmission electron microscope. Therefore, the angle between the first direction and the third direction is set to 53° to avoid interference from the ion beam with the electron microscope resolution and to ensure the clarity of sample observation.

[0042] In some embodiments, the beam combiner is a cylindrical electrostatic deflector, whose structural characteristics allow the high-energy characteristics of the first ion beam to penetrate it. Specifically, the beam combiner has a central trajectory radius of 62.5 cm, a deflection angle of 37°, a central electric field of 1.6 kV / cm, and a plate spacing of 6 cm between the inner and outer plates. The outer plate of the beam combiner has a 20 mm aperture to provide a penetration channel for the first ion beam. The aperture of the outer plate must be larger than the maximum beam spot size of the first ion beam to avoid beam current blockage and transmission loss. It is understood that the initial target energy of the first ion beam is 50 to 400 keV. According to the electric field deflection formula qE = 2W / R, where W is the ion energy, the higher the ion beam energy, the larger the deflection radius R, and the less affected by the deflection electric field. Therefore, the first ion beam experiences almost no deflection when passing through the beam combiner.

[0043] Optionally, since the combiner can have a slight effect on the first ion beam, the actual trajectory of the first ion beam has a certain deflection distance from the ideal trajectory. In order to compensate for this deflection distance, before the first ion beam enters the combiner, the incident position of the first ion beam entering the combiner can be adjusted by the guide, so that the actual trajectory of the first ion beam deviates from the ideal trajectory by 6.5 mm, thereby ensuring that the first ion beam still transmits along the first direction after penetrating the combiner and transmits coaxially with the deflected second ion beam.

[0044] It should be noted that the stable emission and penetration of the first ion beam depends on the real-time control of multiple parameters, such as energy stability, beam intensity stability, and directional stability. Energy stability is determined by the stability of the high-voltage power supply; the high-voltage output of both the first accelerating tube and the hot cathode ion source is monitored in real-time by the control system. Beam intensity stability depends on the output stability of the hot cathode ion source; the control system collects current intensity data in real-time, such as through Faraday cup detection, and adjusts operating parameters such as the heating power and gas flow rate of the hot cathode ion source accordingly. Directional stability can be achieved by fine-tuning the electric field in real-time using the first beam optical element, such as the guide, to calibrate the beam direction, ensuring that the first ion beam is incident on the combiner along the first direction.

[0045] In some embodiments, the ion beam combining system further includes a second vacuum insert valve, which may be disposed between the second ion implanter and the beam combiner. The method further includes: if the second vacuum insert valve is in a closed state, controlling the second ion implanter to stop emitting the second ion beam to the beam combiner; if the second vacuum insert valve switches from a closed state to an open state, controlling the second ion beam to pass through the second vacuum insert valve and be emitted to the beam combiner.

[0046] Specifically, the second vacuum gate valve is a key isolation component between the second ion implanter and the combiner, and its on / off state controls the transmission path of the low-energy ion beam, i.e., the second ion beam. The second vacuum gate valve is installed between the end of the beamline of the second ion implanter and the inlet of the combiner, and is a mechanical device that physically isolates the second ion beam transmission channel. On the one hand, when the second vacuum gate valve is closed, it can cut off the vacuum connection between the second ion implanter beamline (i.e., the second ion beam) and the combiner, ensuring that the vacuum environment on both sides of the second vacuum gate valve can be maintained independently. For example, the first ion implanter can independently achieve vacuum transmission of the first ion beam to the combiner, while the second ion beam transmitted by the second ion implanter is only between the second ion implanter and the second vacuum gate valve. The second ion beam cannot penetrate the second vacuum gate valve to reach the combiner, thus achieving vacuum isolation of the second ion beam through the second vacuum gate valve. On the other hand, when the second vacuum gate valve is closed, it can physically block the second ion beam from entering the combiner, preventing the low-energy beam that has not been properly calibrated from interfering with the transmission of the first ion beam or the calibration of the combiner.

[0047] Specifically, a sample holder is installed between the second vacuum gate valve and the second ion implanter, and the sample holder is loaded with a sample. When the second vacuum gate valve is in the closed state, the sample holder is placed between the second ion implanter and the second vacuum gate valve and can block the second ion beam. The second ion beam emitted by the second ion implanter is blocked by the sample on the sample stage, so that the second ion beam cannot be emitted to the beam combiner. When the second vacuum gate valve is switched from the closed state to the open state, the sample holder is retracted, so that there is no sample holder blocking the second ion implanter and the second vacuum gate valve. The second ion beam can penetrate the second vacuum gate valve and be emitted to the beam combiner, so that the second ion beam and the first ion beam can be combined in the beam combiner.

[0048] It should be noted that a second vacuum gate valve is installed between the second ion implanter and the beam combiner. Similarly, to enable independent use and adjustment of the first ion beam, a first vacuum gate valve can be installed between the first ion implanter and the beam combiner. The first and second vacuum gate valves are identical in principle and function. The first vacuum gate valve prevents the first ion beam from entering the beam combiner, allowing the first ion beam to be used independently in the vacuum environment between the first ion implanter and the first vacuum gate valve. For a detailed description of the first vacuum gate valve, please refer to the description of the second vacuum gate valve above; it will not be repeated here.

[0049] In some embodiments, when the second vacuum gate valve is closed and the first vacuum gate valve is open, the system executes a dual-beam independent debugging mode. Independent debugging of the two beams is achieved through the physical isolation of the second vacuum gate valve, thereby reducing the complexity of system-wide debugging. Optionally, the first ion implanter is controlled to emit a first ion beam towards the beam combiner along a first direction. At this time, since the first vacuum gate valve is open, the first ion beam can normally penetrate the beam combiner and continue to propagate. This process allows for individual calibration of the energy, beam spot size, and propagation direction of the first ion beam, ensuring that the first ion beam meets the requirements for beam combining and coaxiality.

[0050] Optionally, the second ion implanter is controlled to emit a second ion beam towards the second vacuum gate valve. However, since the second vacuum gate valve is closed, the second ion beam is blocked upstream of the valve and cannot enter the combiner. This process allows for individual adjustment of the second ion beam's current intensity, energy stability, and beam spot shape, preventing interference between the low-energy beam and the high-energy beam in an uncalibrated state.

[0051] In some embodiments, when the second vacuum gate valve switches from the closed state to the open state, and the first vacuum gate valve is in the open state, the system executes a dual-beam combining preparation mode. After the dual-beam parameters are individually adjusted to meet the standards, the beam channels of the first and second ion beams are connected by opening the second vacuum gate valve, providing a basis for subsequent beam combining and coupling, while ensuring the stability of the vacuum environment on both sides of the second vacuum gate valve at the moment of opening. Specifically, after the second vacuum gate valve is opened, the vacuum channel between the second ion implanter beamline and the combiner is connected, ensuring that the low-energy ion beam is transmitted in a high vacuum environment and avoiding beam loss caused by air molecule scattering. In addition, the blocked second ion beam passes through the second vacuum gate valve along the second direction, enters the combiner, and is deflected by 37° by the electrostatic deflector, and finally is coaxially transmitted with the first ion beam that penetrates the combiner. At this time, the first and second ion beams are combined in the combiner and synchronously transmitted to the sample, achieving coordinated irradiation.

[0052] In some embodiments, the ion beam combining system further includes a first beam optical element disposed between the first ion implanter and the beam combiner. Before the step of controlling the first ion implanter to emit a first ion beam toward the beam combiner along a first direction and to allow the first ion beam to penetrate the beam combiner, the method further includes: controlling the first ion implanter to emit the first ion beam along the first direction; if the first initial size of the first ion beam is greater than the exit size of the beam combiner, reducing the beam spot size of the first ion beam from the first initial size to a target size based on the first beam optical element, wherein the target size is smaller than the exit size of the beam combiner; and allowing the first ion beam of the target size to penetrate the beam combiner.

[0053] Specifically, the first beam optical element is a key adjustment component in the process of generating and combining the first ion beam. It is located between the first ion implanter and the beam combiner and provides a suitable high-energy beam for subsequent beam combining and irradiation by precisely controlling the beam spot size.

[0054] It should be noted that the first beam optical element can be an electric lens. The first beam optical element is a beam control device with electric field control as its core. The first beam optical element reduces the beam spot size of the first ion beam from the first initial size to the target size through the action of electric field and mechanical restriction, and at the same time calibrates the beam transmission direction to ensure that the first ion beam is stably transmitted to the beam combiner along the first direction.

[0055] Optionally, the exit size of the beam combiner can be 4 to 10 mm. If the initial size of the first ion beam is 10 to 20 mm, then the initial size is larger than the exit size of the beam combiner (4 to 10 mm). Based on the electric field applied by the first beam optical element, such as an electric lens, the first ion beam is focused, and the divergence of the beam cross-section is adjusted. This reduces the beam spot size of the first ion beam from the initial size to a target size, such as 4 to 10 mm. Since this target size is smaller than the exit size of the beam combiner, the first ion beam can pass through the beam combiner. This target size matches the adjusted beam spot size of the subsequent second ion beam to ensure that the irradiation area of ​​the combined beam on the sample surface overlaps, avoiding local dose deviations from affecting the irradiation effect.

[0056] It should be noted that after the first ion beam is accelerated by the first accelerating tube of the first ion implanter, the beam spot size of the first ion beam is determined by factors such as the output characteristics of the hot cathode ion source and the space charge effect during acceleration. It is in a naturally divergent state without focusing and cannot meet the requirements for direct beam combining. For example, due to the distance between the inlet and outlet of the beam combiner, the beam spot size of the first ion beam, after entering the beam combiner, exceeds the aperture of the outer electrode plate of the beam combiner after natural divergence, or the beam spot is too large, resulting in insufficient coaxiality between the first and second ion beams after combining. In other words, it is necessary to further adjust the beam spot size of the first ion beam incident on the beam combiner to improve the coaxiality between the first and second ion beams while ensuring that the first ion beam can pass through the beam combiner.

[0057] Specifically, a beam device such as an aperture can be set between the first beam optical element and the beam combiner. By adjusting the aperture, the beam spot size of the first ion beam is reduced from a target size such as 4 to 10 mm to a beam size such as 0.1 to 4 mm. This beam size can prevent the edge of the first ion beam from being blocked by the outer electrode plate of the beam combiner, thus ensuring transmission efficiency.

[0058] S103, control the second ion implanter to emit a second ion beam toward the beam combiner along the second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction and the second direction are not parallel.

[0059] In some embodiments, the ion beam combining system includes a cold cathode ion source, and the second ion implanter includes a second accelerating tube. The step of controlling the second ion implanter to emit a second ion beam toward the combiner along a second direction may include: generating a second ion based on the cold cathode ion source and determining a second initial energy of the second ion based on the extraction high voltage of the cold cathode ion source, wherein the second initial energy is between 20 and 30 kiloelectron volts; controlling the second accelerating tube to accelerate the second ion and determining a second additional energy of the second ion, wherein the second additional energy is between -10 and 30 kiloelectron volts; and controlling the second ion implanter to emit a second ion beam with a second target energy toward the combiner along the second direction, wherein the second target energy is the sum of the second initial energy and the second additional energy, and the second target energy is between 10 and 50 kiloelectron volts.

[0060] Specifically, the second ion implanter can be a low-energy ion implantation system with a rated voltage of 50kV. This system generates and outputs low-energy hydrogen-helium ion beams, such as hydrogen ions and helium ions. The cold cathode ion source is the core of the second ion generation. It directly feeds in gases such as hydrogen or helium, utilizing the electron cyclotron resonance effect to ionize the gas and generate a mixed ion beam containing the target ions (hydrogen and helium) and impurity ions. The mixed ion beam generated by the cold cathode ion source is then filtered by a velocity accelerator to remove impurity ions such as oxygen ions, retaining the target ions (hydrogen or helium ions) to ensure the purity of the second ion beam.

[0061] In some embodiments, the cold cathode ion source separates the ionized ions from the cold cathode ion source by applying an extraction high voltage of 20 to 30 kV. The energy obtained by the second ion beam at this time is the second initial energy of 20 to 30 keV. This second initial energy ensures that the second ion beam has initial kinetic energy and can enter the subsequent acceleration or deceleration phase.

[0062] The second accelerator tube is equipped with a positive and a negative power supply. The voltage can be adjusted to add or decelerate the second ions, thereby imparting additional energy to them. For example, when a positive voltage is applied to the second accelerator tube, the second ions are accelerated, and the additional energy is a positive value of 0 to 30 keV; when a negative voltage is applied, the second ions are decelerated, and the additional energy is a negative value of -10 to 0 keV.

[0063] The second target energy of the second ion beam is the sum of the second initial energy and the second additional energy, and the second target energy ranges from 10 to 50 keV. This second target energy is significantly lower than that of the first ion beam, which ranges from 50 to 400 keV.

[0064] In some embodiments, the second direction is the transmission axis of the second ion beam from the second ion input stage to the combiner. The second direction forms a 37° angle with the first direction of the first ion beam transmission. The combiner deflects the second ion beam 37° from the second direction to the first direction, thereby achieving coaxial transmission with the first ion beam. Furthermore, the second direction is perpendicular to the third direction of the electron beam transmission from the transmission electron microscope, thereby reducing interference from the low-energy ion beam on electron beam detection and providing spatial compatibility for the combiner's layout.

[0065] In some embodiments, the ion beam combining system further includes a second beam optical element disposed between the second ion implanter and the beam combiner. After controlling the second ion implanter to emit a second ion beam toward the beam combiner along a second direction, the method further includes: if the second initial size of the second ion beam is greater than the exit size of the beam combiner, then based on the second beam optical element, reducing the beam spot size of the second ion beam from the second initial size to a target size, so that the first ion beam and the second ion beam are coaxially transmitted along a first direction.

[0066] Specifically, the second beam optical element is a key component in the process of generating and combining the second ion beam. Positioned between the first ion implanter and the beam combiner, it corrects beam spot deviation of the second ion beam, ensuring that it can penetrate the beam combiner and match the size of the first ion beam, thus achieving high-precision coaxial transmission. After deflection by the beam combiner, due to space charge effects and deflection dispersion, the second initial size of the second ion beam deviates from the target size of the first ion beam, making it impossible to guarantee the overlap of the sample irradiation area. Therefore, a second beam optical element is placed between the second ion implanter and the beam combiner to adjust the beam spot size of the second ion beam.

[0067] Optionally, the second beam optical elements include an electric lens and a guide. The electric lens can be a quadrupole lens, which can perform focusing compensation for the second ion beam. Depending on actual needs, the beam spot shape of the second ion beam can be adjusted by controlling multiple quadrupole lenses, for example, adjusting the beam spot shape of the second ion beam to a circle. The guide can adjust the transmission direction of the second ion beam. Specifically, before beam combining, the second ion beam is focused by applying a focusing electric field through the quadrupole lens, compressing the beam spot size of the second ion beam to achieve focusing compensation. This reduces the beam spot size of the second ion beam from a second initial size to a target size, making the beam spot size of the second ion beam match that of the first ion beam and improving the coaxiality between the first and second ion beams. Furthermore, if the second ion beam deviates from the centerline during transmission, the guide can be used to fine-tune the transmission direction of the second ion beam, allowing it to transmit to a specific position.

[0068] S104, based on the beam combiner, the transmission direction of the second ion beam is deflected from the second direction to the first direction, so that the first ion beam and the second ion beam passing through the beam combiner are both transmitted coaxially along the first direction to form a combined beam.

[0069] It should be noted that the beam combiner is the core component for integrating the first and second ion beams in both directions. The beam combiner can meet the deflection requirements of the low-energy second ion beam and the penetration requirements of the first ion beam. The deflection principle of the second ion beam is as follows: according to the electric field deflection formula qE=2W / R, where q is the ion charge, E is the electric field strength, W is the ion energy, and R is the deflection radius. The low-energy second ion beam has lower ion energy and experiences a significant force in the electric field, deflecting 37° along its central trajectory to coincide with the first direction of the first ion beam's transmission. For example, a 50keV helium ion in a 1.6kV / cm electric field can precisely complete a 37° deflection along a 62.5cm radius trajectory to enter the first direction of transmission.

[0070] By aligning the beam combiner, the deflection center of the beam combiner is precisely calibrated with the transmission axis of the first ion beam, ensuring that the center trajectory of the second ion beam after deflection coincides with that of the first ion beam. The overlap of the beams is visualized by setting a fluorescent target downstream of the beam combiner, and stray beam currents are removed by using an aperture, thereby further optimizing the coaxiality of the first and second ion beams.

[0071] In some embodiments, to improve the irradiation effect on the sample, the beam current of the beam formed by the beam combiner can be adjusted. Specifically, a third beam current optical element can be provided on the side of the beam combiner away from the first or second ion implanter. This third beam current source element may include an electric lens, a guide, and an aperture, etc. The beam current parameters of the beam combiner, such as beam current intensity, beam position, beam spot size, and beam overlap, can be adjusted through the third beam current optical element.

[0072] Optionally, the electric lens focuses the beam by applying an electric field, adjusting the divergence of the beam cross-section and thus changing the beam spot size. The guide corrects minor deviations in the beam's transmission trajectory by fine-tuning the electric field direction, ensuring the beam is transmitted to the sample along the first direction. The aperture is a mechanical component with a specific aperture, which physically blocks the diverging portion at the edge of the beam, further precisely controlling the beam spot size and enabling irradiation of small samples. In some embodiments, the beam spot size can be adjusted collaboratively by multiple elements, including the electric lens, aperture, and guide. The specific adjustment method is not limited here and can be adjusted according to the actual situation.

[0073] S105, the sample is irradiated based on the combined beam injected along the first direction, and the transmission electron microscope is controlled to perform in-situ detection of the irradiated sample.

[0074] In some embodiments, the transmission electron microscope is controlled to emit an electron beam toward the sample along a third direction to perform in-situ detection of the sample by means of the electron beam, wherein the angle between the first direction and the third direction is 53°, and the second direction is perpendicular to the third direction.

[0075] Specifically, the irradiation of the sample by the combined beam propagating along the first direction is the core process for simulating the neutron irradiation effect within a nuclear fusion reactor. The combined beam consists of two ion beams of different energies and types: a first ion beam and a second ion beam, working together to simulate multi-dimensional damage to the sample. The first ion beam collides with the sample's atomic nuclei, generating cascade damage, simulating displacement damage caused by recoil nuclei during neutron irradiation, thus simulating high-dose neutron irradiation. The second ion beam, such as helium ions, simulates helium gas produced by the transmutation effect of neutron irradiation, forming helium bubbles in the sample. A second ion beam, such as hydrogen ions, provides a more uniform damage cross-section and increases the irradiation depth. Together, helium and hydrogen ions simulate the hydrogen-helium synergistic effect faced by the first wall material of the fusion reactor. The first and second ion beams are injected coaxially into the sample along the first direction, ensuring that the damage effect is superimposed on the same target region of the sample, more closely resembling the complex irradiation environment within the reactor.

[0076] In some embodiments, transmission electron microscopy (TEM) allows for real-time observation of changes in the microstructure of a sample while it is being irradiated, overcoming the limitation of traditional off-site irradiation which can only obtain final-state data. Specifically, the TEM emits an electron beam towards the sample along a third direction. After penetrating the sample, the electron beam interacts with internal microstructures such as defects, dislocations, and helium bubbles, generating diffraction or imaging signals. These signals are recorded by a detector and used to generate real-time images. For example, TEM can capture in real-time the formation process of dislocation loops caused by heavy-ion irradiation, as well as the dynamic evolution of helium ion aggregation to form helium bubbles.

[0077] It should be noted that this embodiment achieves high-dose irradiation (greater than 300 dPa) over a short period using a high-energy heavy ion beam, i.e., the first ion beam. Through the cascade collisions between the ion beam and the atomic nuclei of the material, the displacement damage effect of neutron irradiation is accurately simulated. Furthermore, by combining the first and second ion beams for synergistic irradiation, the problem of insufficient simulation of complex damage mechanisms by single-beam ion irradiation technology is solved.

[0078] In some embodiments, this embodiment sets the angle between the first direction of beam combining and the third direction of electron beam transmission to 53°, which is less than the existing minimum angle of 60°. This avoids interference from secondary ions of the ion beam with the transmission electron microscope while improving the clarity of sample observation.

[0079] As described above, this embodiment provides a sample and places it on the sample stage of a transmission electron microscope (TEM). A first ion implanter is controlled to emit a first ion beam along a first direction towards a beam combiner, ensuring the first ion beam penetrates the beam combiner. A second ion implanter is controlled to emit a second ion beam along a second direction towards the beam combiner. The energy of the first ion beam is greater than that of the second ion beam, and the first and second directions are not parallel. The beam combiner deflects the transmission direction of the second ion beam from the second direction to the first direction, so that both the first and second ion beams penetrating the beam combiner are coaxially transmitted along the first direction to form a combined beam. The sample is irradiated based on the combined beam injected along the first direction, and the TEM is controlled to perform in-situ detection of the irradiated sample. This embodiment successfully simulates neutron irradiation technology while meeting the high irradiation dose requirement using a combined irradiation method.

[0080] Additionally, this application also provides an ion beam combining device. Please refer to [link to relevant documentation]. Figure 5 , Figure 5 This is a schematic diagram of the ion beam combining device provided in an embodiment of this application. The ion beam combining device 200 can be applied to an ion beam combining system, which includes a first ion implanter, a second ion implanter, a beam combiner, and a transmission electron microscope. The ion beam combining device 200 may include a first processing module 201, a first control module 202, a second control module 203, a second processing module 204, and a third processing module 205, as detailed below: The first processing module 201 is used to provide a sample and place the sample on the sample stage of the transmission electron microscope; The first control module 202 is used to control the first ion implanter to emit a first ion beam toward the beam combiner along a first direction and to make the first ion beam penetrate the beam combiner. The second control module 203 is used to control the second ion implanter to emit a second ion beam toward the beam combiner along a second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction and the second direction are not parallel. The second processing module 204 is used to deflect the transmission direction of the second ion beam from the second direction to the first direction based on the beam combiner, so that the first ion beam and the second ion beam penetrating the beam combiner are both transmitted coaxially along the first direction to form a beam combiner. The third processing module 205 is used to irradiate the sample based on the combined beam injected along the first direction, and to control the transmission electron microscope to perform in-situ detection of the irradiated sample.

[0081] In some embodiments, the ion beam combining system further includes a thermionic cathode ion source, and the first ion implanter includes a first accelerating tube. The first control module 202 can also be used to: generate a first ion based on the thermionic cathode ion source, and determine a first initial energy of the first ion based on the high voltage extracted from the thermionic cathode ion source, wherein the first initial energy is between 20 and 30 kiloelectron volts; control the first accelerating tube to accelerate the first ion, and determine a first additional energy of the first ion, wherein the first additional energy is between 30 and 380 kiloelectron volts; control the first ion implanter to emit a first ion beam with a first target energy toward the beam combiner along a first direction, wherein the first target energy is the sum of the first initial energy and the first additional energy, and the first target energy is between 50 and 400 kiloelectron volts.

[0082] In some embodiments, the ion beam combining system further includes a cold cathode ion source, and the second ion implanter includes a second accelerating tube. The second control module 203 can also be used to: generate a second ion based on the cold cathode ion source and determine a second initial energy of the second ion based on the high voltage extracted from the cold cathode ion source, wherein the second initial energy is between 20 and 30 kiloelectron volts; control the second accelerating tube to accelerate the second ion and determine a second additional energy of the second ion, wherein the second additional energy is between -10 and 30 kiloelectron volts; control the second ion implanter to emit a second ion beam with a second target energy toward the beam combiner along a second direction, wherein the second target energy is the sum of the second initial energy and the second additional energy, and the second target energy is between 10 and 50 kiloelectron volts.

[0083] In some embodiments, the ion beam combining system may further include a first beam optical element disposed between the first ion implanter and the beam combiner. The ion beam combining device 200 may further include a first beam module, which may be used to: control the first ion implanter to emit a first ion beam along a first direction; if the first initial size of the first ion beam is greater than the exit size of the beam combiner, reduce the beam spot size of the first ion beam from the first initial size to a target size based on the first beam optical element, wherein the target size is smaller than the exit size of the beam combiner; and penetrate the beam combiner with the first ion beam of the target size.

[0084] In some embodiments, the ion beam combining system may further include a second beam optical element disposed between the second ion implanter and the beam combiner. The ion beam combining device 200 may further include a second beam module. After controlling the second ion implanter to emit a second ion beam toward the beam combiner along a second direction, the second beam module may be used to: if the second initial size of the second ion beam is greater than the exit size of the beam combiner, reduce the beam spot size of the second ion beam from the second initial size to a target size based on the second beam optical element, so that the first ion beam and the second ion beam are coaxially transmitted along a first direction.

[0085] In some embodiments, the third processing module 205 can also be used to: control the transmission electron microscope to emit an electron beam toward the sample along a third direction, so as to perform in-situ detection of the sample by the electron beam, wherein the angle between the first direction and the third direction is 53°, and the second direction is perpendicular to the third direction.

[0086] In some embodiments, the ion beam combining system further includes a second vacuum gate valve disposed between the second ion implanter and the beam combiner. The ion beam combining device 200 may also include an isolation module, which can be used to: control the second ion implanter to stop emitting the second ion beam to the beam combiner if the second vacuum gate valve is in a closed state; and control the second ion beam to pass through the second vacuum gate valve and be emitted to the beam combiner if the second vacuum gate valve switches from a closed state to an open state.

[0087] It should be noted that the ion beam combining device provided in this application embodiment belongs to the same concept as the ion beam combining method in the above embodiment. Any of the methods provided in the ion beam combining method embodiment can be run on the ion beam combining device. For details of its implementation process, please refer to the ion beam combining method embodiment, which will not be repeated here.

[0088] In this embodiment, the ion beam combining device 200 provides a sample via a first processing module 201 and places the sample on the sample stage of a transmission electron microscope (TEM). A first control module 202 controls a first ion implanter to emit a first ion beam along a first direction towards the combiner, causing the first ion beam to penetrate the combiner. A second control module 203 controls a second ion implanter to emit a second ion beam along a second direction towards the combiner, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first and second directions are not parallel. A second processing module 204 deflects the transmission direction of the second ion beam from the second direction to the first direction based on the combiner, so that the first and second ion beams penetrating the combiner are coaxially transmitted along the first direction to form a combined beam. A third processing module 205 irradiates the sample based on the combined beam injected along the first direction and controls the TEM to perform in-situ detection of the irradiated sample. This embodiment successfully simulates neutron irradiation technology while meeting the high irradiation dose requirements using a combined irradiation method.

[0089] Optionally, this embodiment also provides a computer-readable storage medium storing computer program code. When the computer program code is run on a computer, the computer executes the above-described related method steps to implement the ion beam combining method provided in the above embodiment.

[0090] The storage medium may include: read-only memory (ROM), random access memory (RAM), disk or optical disk, etc.

[0091] Since the instructions stored in the storage medium can execute the steps of any of the ion beam combining methods provided in the embodiments of this application, the beneficial effects that any of the ion beam combining methods provided in the embodiments of this application can achieve can be realized, as detailed in the preceding embodiments, and will not be repeated here.

[0092] Accordingly, this application also provides an ion beam combining system; please refer to [link to relevant documentation]. Figure 6 , Figure 6 This is a fourth structural schematic diagram of the ion beam combining system provided in this application embodiment. The ion beam combining system 300 includes a processor 301 and a memory 302. The processor 301 and the memory 302 are electrically connected.

[0093] The processor 301 is the control center of the ion beam combining system 300. It connects various parts of the ion beam combining system through various interfaces and lines. By running or calling computer programs stored in memory 302 and calling data stored in memory 302, it executes various functions of the ion beam combining system and processes data, thereby performing overall monitoring of the ion beam combining system.

[0094] The memory 302 can be used to store software programs and modules. The processor 301 executes various functional applications and data processing by running the computer programs and modules stored in the memory 302. The memory 302 may mainly include a program storage area and a data storage area. The program storage area may store the operating system, computer programs required for at least one function, etc.; the data storage area may store data created based on the use of the ion beam combining system, etc.

[0095] Furthermore, memory 302 may include high-speed random access memory, and may also include non-volatile memory, such as at least one disk storage device, flash memory device, or other volatile solid-state storage device. Accordingly, memory 302 may also include a memory controller to provide processor 301 with access to memory 302.

[0096] In this embodiment, the processor 301 in the ion beam combining system 300 loads the instructions corresponding to the processes of one or more computer programs into the memory 302 according to the following steps, and the processor 301 runs the computer programs stored in the memory 302 to realize various functions, as follows: Provide a sample and place it on the sample stage of the transmission electron microscope; Control the first ion implanter to emit a first ion beam toward the bundler along a first direction, and make the first ion beam penetrate the bundler; The second ion implanter is controlled to emit a second ion beam toward the beam combiner along a second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction and the second direction are not parallel. The beam combiner deflects the transmission direction of the second ion beam from the second direction to the first direction, so that the first ion beam and the second ion beam that penetrate the beam combiner are both transmitted coaxially along the first direction to form a combined beam. The sample is irradiated by a combined beam injected along the first direction, and the irradiated sample is detected in situ by a transmission electron microscope.

[0097] In the embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another device, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0098] For the ion beam combining device of this application embodiment, its functional modules can be integrated into a processing chip, or each module can exist physically separately, or two or more modules can be integrated into one module. The integrated module can be implemented in hardware or as a software functional module. If the integrated module is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0099] The ion beam combining method, apparatus, system, and storage medium provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The above embodiments are only for the purpose of helping to understand the methods and core ideas of this application; at the same time, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for combining ion beams, characterized in that, The method is applied to an ion beam combining system, the ion beam combining system including a first ion implanter, a second ion implanter, a beam combiner, and a transmission electron microscope, and includes: Provide a sample and place the sample on the sample stage of the transmission electron microscope; The first ion implanter is controlled to emit a first ion beam toward the combiner along a first direction, and the first ion beam penetrates the combiner. The second ion implanter is controlled to emit a second ion beam toward the beam combiner along a second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction is not parallel to the second direction; The beam combiner deflects the transmission direction of the second ion beam from the second direction to the first direction, so that the first ion beam and the second ion beam passing through the beam combiner are both transmitted coaxially along the first direction to form a combined beam. The sample is irradiated based on the combined beam injected along the first direction, and the transmission electron microscope is controlled to perform in-situ detection on the irradiated sample. The ion beam combining system further includes a hot cathode ion source, the first ion implanter includes a first accelerating tube, and controlling the first ion implanter to emit a first ion beam toward the combiner along a first direction includes: The first ion is generated based on the hot cathode ion source, and the first initial energy of the first ion is determined based on the high voltage extracted from the hot cathode ion source, wherein the first initial energy is between 20 and 30 kiloelectron volts. The first accelerator tube is controlled to accelerate the first ion, and the first additional energy of the first ion is determined, wherein the first additional energy is between 30 and 380 kiloelectron volts. The first ion implanter is controlled to emit a first ion beam with a first target energy toward the beam combiner along the first direction, wherein the first target energy is the sum of the first initial energy and the first additional energy, and the first target energy is between 50 and 400 kiloelectron volts. The ion beam combining system includes a cold cathode ion source, the second ion implanter includes a second accelerating tube, and controlling the second ion implanter to emit a second ion beam toward the combiner along a second direction includes: The second ion is generated based on the cold cathode ion source, and the second initial energy of the second ion is determined based on the extraction high voltage of the cold cathode ion source, wherein the second initial energy is between 20 and 30 kiloelectron volts. The second accelerator tube is controlled to accelerate the second ion, and the second additional energy of the second ion is determined, wherein the second additional energy is between -10 and 30 kiloelectron volts; The second ion implanter is controlled to emit a second ion beam with a second target energy toward the beam combiner along the second direction, wherein the second target energy is the sum of the second initial energy and the second additional energy, and the second target energy is between 10 and 50 kiloelectron volts.

2. The ion beam combining method according to claim 1, characterized in that, The ion beam combining system further includes a first beam optical element disposed between the first ion implanter and the beam combiner. Before controlling the first ion implanter to emit a first ion beam toward the beam combiner along a first direction and allowing the first ion beam to penetrate the beam combiner, the method further includes: Control the first ion implanter to emit the first ion beam along a first direction; If the first initial size of the first ion beam is greater than the exit size of the beam combiner, then the beam spot size of the first ion beam is reduced from the first initial size to the target size based on the first beam optical element, wherein the target size is smaller than the exit size of the beam combiner; A first ion beam of the target size is passed through the combiner.

3. The ion beam combining method according to claim 2, characterized in that, The ion beam combining system further includes a second beam optical element disposed between the second ion implanter and the beam combiner. After controlling the second ion implanter to emit a second ion beam toward the beam combiner along a second direction, the method further includes: If the second initial size of the second ion beam is larger than the exit size of the beam combiner, then the beam spot size of the second ion beam is reduced from the second initial size to the target size based on the second beam optical element, so that the first ion beam and the second ion beam are transmitted coaxially along the first direction.

4. The ion beam combining method according to claim 1, characterized in that, The method of controlling the transmission electron microscope to perform in-situ detection of the irradiated sample includes: The transmission electron microscope is controlled to emit an electron beam toward the sample along a third direction to perform in-situ detection of the sample by means of the electron beam, wherein the angle between the first direction and the third direction is 53°, and the second direction is perpendicular to the third direction.

5. The ion beam combining method according to claim 1, characterized in that, The ion beam combining system further includes a second vacuum insert valve, which is disposed between the second ion implanter and the beam combiner. The method further includes: If the second vacuum insert valve is closed, the second ion implanter is controlled to stop emitting the second ion beam toward the combiner; If the second vacuum insert valve switches from the closed state to the open state, the second ion beam is controlled to pass through the second vacuum insert valve and be emitted to the beam combiner.

6. An ion beam combining device, characterized in that, An apparatus for use in an ion beam combining system, the ion beam combining system comprising a first ion implanter, a second ion implanter, a beam combiner, and a transmission electron microscope, the apparatus comprising: The first processing module is used to provide a sample and place the sample on the sample stage of the transmission electron microscope; A first control module is used to control the first ion implanter to emit a first ion beam toward the combiner along a first direction and to make the first ion beam penetrate the combiner. The second control module is used to control the second ion implanter to emit a second ion beam toward the beam combiner along a second direction, wherein the energy of the first ion beam is greater than the energy of the second ion beam, and the first direction is not parallel to the second direction; The second processing module is used to deflect the transmission direction of the second ion beam from the second direction to the first direction based on the beam combiner, so that the first ion beam penetrating the beam combiner and the second ion beam are both transmitted coaxially along the first direction to form a combined beam. The third processing module is used to irradiate the sample based on the combined beam injected along the first direction, and to control the transmission electron microscope to perform in-situ detection on the irradiated sample. The ion beam combining system further includes a hot cathode ion source, the first ion implanter includes a first accelerating tube, and the first control module is further configured to: The first ion is generated based on the hot cathode ion source, and the first initial energy of the first ion is determined based on the high voltage extracted from the hot cathode ion source, wherein the first initial energy is between 20 and 30 kiloelectron volts. The first accelerator tube is controlled to accelerate the first ion, and the first additional energy of the first ion is determined, wherein the first additional energy is between 30 and 380 kiloelectron volts. The first ion implanter is controlled to emit a first ion beam with a first target energy toward the beam combiner along the first direction, wherein the first target energy is the sum of the first initial energy and the first additional energy, and the first target energy is between 50 and 400 kiloelectron volts. The ion beam combining system includes a cold cathode ion source, the second ion implanter includes a second accelerating tube, and the second control module is further configured to: The second ion is generated based on the cold cathode ion source, and the second initial energy of the second ion is determined based on the extraction high voltage of the cold cathode ion source, wherein the second initial energy is between 20 and 30 kiloelectron volts. The second accelerator tube is controlled to accelerate the second ion, and the second additional energy of the second ion is determined, wherein the second additional energy is between -10 and 30 kiloelectron volts; The second ion implanter is controlled to emit a second ion beam with a second target energy toward the beam combiner along the second direction, wherein the second target energy is the sum of the second initial energy and the second additional energy, and the second target energy is between 10 and 50 kiloelectron volts.

7. An ion beam combining system, characterized in that, include: Memory, used to store executable program code; A processor is configured to call and run the executable program code from the memory, causing the ion beam combining system to perform the ion beam combining method as described in any one of claims 1 to 5.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed, implements the ion beam combining method as described in any one of claims 1 to 5.

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