Deposition rate control method, apparatus, storage medium, and program product
By acquiring deposition rate and rate of change in real time and optimizing the power output range, the problem of unstable deposition rate was solved, and the stability and efficiency of the deposition process were improved.
Patent Information
- Application Number
- CN202610007942.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2026-01-06
- Publication Date
- 2026-06-09
- Estimated Expiration
- 2046-01-06
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Figure CN121451138B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor device technology, and in particular to a deposition rate control method, apparatus, storage medium, and program product. Background Technology
[0002] In industrial fields such as organic light-emitting material manufacturing and semiconductor manufacturing, deposition is one of the core processes. During deposition, materials form a uniform thin film on the surface of a substrate through physical or chemical means, and the rate at which this film is deposited directly affects product quality and process efficiency.
[0003] Currently, long-term deposition in related technologies faces multiple challenges: the material gradually decreases as it is continuously consumed, causing the deposition rate to decline over time, requiring dynamic adjustment of power output to maintain the target rate. Currently, power output adjustment is typically achieved using PID (Proportional-Integral-Derivative) algorithms, with power fluctuations manually limited.
[0004] However, the inventors have discovered that the relevant technology has at least the following technical problems: the current dynamic adjustment of power output has a large adjustment range, which leads to unstable deposition rate and causes an increase in defects. Summary of the Invention
[0005] This application provides a deposition rate control method, device, storage medium, and program product to solve problems such as unstable deposition rate and numerous defects in manufactured devices.
[0006] In a first aspect, embodiments of this application provide a deposition rate control method, comprising: periodically acquiring a deposition rate, wherein the deposition rate corresponds to a data acquisition time; determining a deposition rate change rate corresponding to the data acquisition time based on the deposition rate corresponding to the data acquisition time; determining whether to increase a power threshold based on the deposition rate corresponding to the data acquisition time and the deposition rate change rate; if it is determined that the power threshold should be increased, then increasing the minimum power output value and the maximum power output value; and using an output power greater than the minimum power output value and less than the maximum power output value for deposition of the luminescent layer.
[0007] In one possible implementation, the deposition rate change rate corresponding to the data acquisition time is determined based on the deposition rate corresponding to the data acquisition time, including: subtracting the deposition rates corresponding to adjacent data acquisition times to obtain the deposition rate difference; and dividing the deposition rate difference by a preset data acquisition period value to obtain the deposition rate change rate.
[0008] In one possible implementation, the determination of whether to increase the power threshold is based on the deposition rate and the rate of change of deposition rate at the time of data acquisition. This includes: if the deposition rate at the time of data acquisition is less than a preset deposition rate warning threshold and the rate of change of deposition rate is less than a preset rate of change threshold, then the power threshold is increased; otherwise, the power threshold is not increased.
[0009] In one possible implementation, determining whether to increase the power threshold based on the deposition rate and the rate of change of deposition rate at the data acquisition time includes: subtracting the deposition rates corresponding to adjacent data acquisition times to obtain the deposition rate difference; dividing the deposition rate difference by a preset data acquisition period value and taking the absolute value to obtain the deposition acceleration; if the deposition acceleration corresponding to the last N data acquisition times first increases and then decreases, and the rate of change of deposition rate corresponding to the last at least one data acquisition time is less than a preset rate of change threshold, and the deposition rate corresponding to the last at least one data acquisition time is less than a preset deposition rate warning threshold, then determining to increase the power threshold.
[0010] In one possible implementation, if it is determined that the power threshold should be increased, then the minimum and maximum power output values are increased, including: if it is determined that the power threshold should be increased, then the current minimum and maximum power output values are obtained; the deposition acceleration corresponding to the last at least one data acquisition moment is divided by the reference acceleration to obtain the acceleration ratio; the deposition rate corresponding to the last at least one data acquisition moment is divided by the deposition rate reference value to obtain the deposition rate ratio; a preset coefficient, the acceleration ratio, the deposition rate ratio, and the current minimum power output value are multiplied together to obtain a new minimum power output value; and a preset coefficient, the acceleration ratio, the deposition rate ratio, and the current maximum power output value are multiplied together to obtain a new maximum power output value.
[0011] In one possible implementation, if it is determined that the power threshold should be increased, then the minimum and maximum power output values are increased, including: if it is determined that the power threshold should be increased, then the current minimum and maximum power output values are obtained; the average of the current minimum and maximum power output values is determined as the new minimum power output value; the new minimum power output value is subtracted from the current minimum power output value to obtain the power difference; the power difference is added to the maximum power output value to obtain the new maximum power output value.
[0012] In one possible implementation, after periodically acquiring the deposition rate, the method further includes: if the deposition rate is lower than a preset deposition rate threshold, then determining to increase the power threshold.
[0013] Secondly, embodiments of this application provide a deposition rate control device, comprising: a rate acquisition module for periodically acquiring deposition rates, wherein the deposition rate corresponds to a data acquisition time; a rate of change determination module for determining the deposition rate of change corresponding to the data acquisition time; a change judgment module for determining whether to increase a power threshold based on the deposition rate and the deposition rate of change corresponding to the data acquisition time; a threshold increase module for increasing the minimum and maximum power output values if the power threshold is determined to be increased; and a material deposition module for depositing a light-emitting layer using an output power greater than the minimum power output value and less than the maximum power output value.
[0014] Thirdly, embodiments of this application provide an electronic device, including: a memory and a processor;
[0015] The memory stores the instructions that the computer executes;
[0016] The processor executes computer execution instructions stored in memory, causing the processor to perform the first aspect and / or various possible implementations of the first aspect as described above.
[0017] Fourthly, embodiments of this application provide a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, are used to implement the first aspect and / or various possible implementations of the first aspect.
[0018] Fifthly, embodiments of this application provide a computer program product, including a computer program that, when executed by a processor, implements the first aspect and / or various possible implementations of the first aspect.
[0019] The deposition rate control method, device, storage medium, and program product provided in this application obtain the deposition rate and determine the deposition rate change rate. By combining the deposition rate and the deposition rate change rate, it determines whether it is appropriate to increase the power threshold. If it is appropriate to increase the power threshold, it increases the minimum and maximum power output values. The light-emitting layer is deposited using the power of the new power output range. This achieves power adjustment under appropriate conditions and maintains the power output range within a small range, ensuring that the deposition rate is controllable and steadily increasing the deposition rate of the light-emitting layer. Attached Figure Description
[0020] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.
[0021] Figure 1 A schematic diagram of a scenario for the deposition rate control method provided in this application;
[0022] Figure 2 A schematic flowchart of the deposition rate control method provided in the embodiments of this application;
[0023] Figure 3 This is a schematic diagram of the deposition rate control device provided in the embodiments of this application;
[0024] Figure 4 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.
[0025] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation
[0026] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.
[0027] In industrial manufacturing fields such as organic light-emitting materials and semiconductors, deposition is one of the core processes. In this process, materials form a uniform thin film on the surface of a substrate through physical or chemical means, and the deposition rate directly affects product quality and process efficiency.
[0028] However, in long-term deposition scenarios, material is continuously consumed, causing the deposition rate to decay over time. This necessitates dynamically adjusting the power output to maintain the target rate. Most solutions employ PID (Proportional-Integral-Derivative) algorithms to control and regulate power output, with power fluctuation thresholds set manually. However, the inventors discovered in experiments that during dynamic power adjustment, setting a large power fluctuation range can easily lead to deposition rate instability, resulting in increased product defect rates. Furthermore, directly setting the maximum power output to or near the equipment's power limit causes excessively rapid temperature increases, further reducing the deposition rate. When increased power is needed to maintain the deposition rate, there is insufficient adjustment margin, causing the deposition rate to fall below the minimum requirement for the desired deposition rate.
[0029] To address the aforementioned technical problems, the inventors propose the following technical concept: by collecting the deposition rate in real time during the deposition process, determining the rate of change of the deposition rate, and combining the deposition rate and the rate of change of the deposition rate to optimize the upper and lower limits of the power output, thereby controlling the power output based on the upper and lower limits of the power output, and thus controlling the deposition rate.
[0030] Figure 1 This is a schematic diagram illustrating a scenario for the deposition rate control method provided in this application. Figure 1 The scenario includes: controller 101 and vapor deposition unit 102.
[0031] In specific implementation, the controller 101 can be a CPU (central processing unit), a programmable logic device (PLD), a control board, an ECU (electronic control unit), etc.
[0032] The vapor deposition unit 102 may include modules such as an evaporation source and a vacuum pump.
[0033] The controller 101 and the vapor deposition unit 102 can be connected by wired or wireless means. The controller 101 is used to control the output power of the vapor deposition unit 102, thereby controlling the deposition rate.
[0034] It is understood that the scenarios illustrated in the embodiments of this application do not constitute a specific limitation on the deposition rate control method. In other feasible embodiments of this application, the above scenarios may include more or fewer components than illustrated, or combine some components, or split some components, or arrange different components, which can be determined according to the actual application scenario and are not limited here. Figure 1 The scenario shown can be implemented by hardware, software, or a combination of both.
[0035] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.
[0036] Figure 2 This is a schematic flowchart illustrating the deposition rate control method provided in an embodiment of this application. The execution entity of this embodiment may be... Figure 1 The controller in this embodiment can also be a computer and / or a mobile phone, etc., and this embodiment does not impose any particular limitations on it. Figure 2 As shown, the method includes:
[0037] S201: Periodically acquire deposition rate, with the deposition rate corresponding to the data acquisition time.
[0038] In this step, the deposition rate can be detected by means of quartz crystal microbalance (QCM), laser interferometry, elliptic polarization method, etc. at fixed time intervals, and the rate data obtained from each detection is bound and stored with the corresponding sampling timestamp.
[0039] S202: Determine the rate of change of deposition rate at the time of data acquisition based on the deposition rate at the time of data acquisition.
[0040] In this step, the rate difference between two adjacent data acquisition times can be used, combined with a fixed acquisition period, to convert discrete rate data into a continuous parameter reflecting the rate change trend by calculating "the change in deposition rate / time interval".
[0041] S203: Determine whether to increase the power threshold based on the deposition rate and deposition rate change rate at the time of data acquisition.
[0042] In this step, the power threshold (minimum / maximum power output) limits the power adjustment range of the PID controller. Whether the power threshold needs to be increased can be determined by checking if the deposition rate is outside the preset reasonable range for deposition rate, and if the rate of change of deposition rate is also outside the preset reasonable range for rate of change of deposition rate.
[0043] The "current deposition rate" reflects whether the rate meets the basic requirements, while the deposition rate change rate reflects the rate change trend. If the current deposition rate has deviated from the reasonable range and the deposition rate change trend is not conducive to rate stability, it indicates that the existing power adjustment range is insufficient and the adjustment range needs to be expanded by increasing the power threshold.
[0044] S204: If it is determined that the power threshold should be increased, then the minimum and maximum power output values should be increased.
[0045] In this step, the minimum and maximum power output values together define the power adjustment range of the PID controller. The existing range is no longer sufficient to maintain the target deposition rate. Increasing the minimum and maximum power output values can be achieved by simultaneously increasing both by preset values, or by increasing the maximum output power by a certain percentage.
[0046] For example, when it is determined that the power threshold should be increased, the minimum and maximum power output values are increased by 1 / 10 of the maximum output power; or, when it is determined that the power threshold should be increased, the minimum and maximum power output values are increased by 1 / 5 of the maximum output power; or, when it is determined that the power threshold should be increased, the minimum and maximum power output values are simultaneously increased by 1kW; or, when it is determined that the power threshold should be increased, the minimum and maximum power output values are simultaneously increased by 5kW.
[0047] S205: The light-emitting layer is deposited using an output power greater than the minimum power output and less than the maximum power output.
[0048] In this step, the minimum and maximum power output values define the legal adjustment range of the PID controller. The new minimum and maximum power output values can be input into the PID controller, so that the controller can use power control between the new minimum and maximum power output values to deposit the light-emitting layer.
[0049] As can be seen from the description of the above embodiments, the embodiments of this disclosure obtain the deposition rate and determine the deposition rate change rate, combine the deposition rate and the deposition rate change rate to determine whether it is appropriate to increase the power threshold, and increase the minimum and maximum power output values when it is appropriate to increase the power threshold. The light-emitting layer is deposited using the power of the new power output range, thereby achieving power adjustment under appropriate conditions and maintaining the power output range within a small range, ensuring that the deposition rate is controllable and steadily increasing the deposition rate of the light-emitting layer.
[0050] In one possible implementation, step S202 above, determining the deposition rate change rate corresponding to the data acquisition time based on the deposition rate at the data acquisition time, includes steps S2021 and S2022.
[0051] S2021: Subtract the deposition rates corresponding to adjacent data acquisition times to obtain the deposition rate difference.
[0052] In this step, based on temporal correlation, the deposition rate at two consecutive data acquisition moments (the rate at the later moment minus the rate at the earlier moment) is selected. The absolute change in deposition rate within the two acquisition cycles is intuitively reflected by the sign of the difference (positive for rate increase, negative for rate decrease) and the magnitude of the absolute value.
[0053] S2022: Divide the deposition rate difference by the preset data acquisition cycle value to obtain the deposition rate change rate.
[0054] In this step, the data acquisition cycle value is the same as the cycle for obtaining the deposition rate in step S201. The deposition rate difference only reflects the "total change within two cycles," while the deposition rate change rate reflects the "change per unit time." This transforms the absolute change amplitude into the "rate change per unit time," thereby achieving a quantitative characterization of the rate change trend.
[0055] As can be seen from the description of the above embodiments, the embodiments of this disclosure calculate the difference in deposition rate corresponding to adjacent data acquisition times, divide it by the data acquisition cycle value, and obtain the deposition rate change rate, which is convenient for subsequent determination of whether the minimum and maximum values of power output need to be adjusted based on the deposition rate change rate.
[0056] In one possible implementation, step S203 above determines whether to increase the power threshold based on the deposition rate and the rate of change of deposition rate at the time of data acquisition, including:
[0057] S203A1: If the deposition rate at the time of data acquisition is less than the preset deposition rate warning threshold and the deposition rate change rate is less than the preset change rate threshold, then it is determined that the power threshold should be increased; otherwise, it is determined that the power threshold should not be increased.
[0058] In this step, the deposition rate warning threshold and the rate of change threshold can be preset by the staff based on experimental data. The deposition rate warning threshold is higher than the lower limit of the deposition rate required by the process.
[0059] In the experiment, the inventors found that if the deposition rate is less than the preset deposition rate warning threshold, it means that the deposition rate is already low. In addition, the deposition rate change rate usually follows the pattern of increasing and then decreasing. When the deposition rate change rate decreases, the deposition rate is usually close to the lower limit of the deposition rate required by the process. Therefore, when the deposition rate is less than the preset deposition rate warning threshold and the deposition rate change rate is less than the preset change rate threshold, it is determined to increase the power threshold.
[0060] As can be seen from the description of the above embodiments, the embodiments of this disclosure determine to increase the power threshold when the deposition rate is less than a preset deposition rate warning threshold and the deposition rate change rate is less than a preset change rate threshold, thereby ensuring that the deposition rate is within a reasonable range and that the timing of power adjustment is more accurate.
[0061] In one possible implementation, step S203 above determines whether to increase the power threshold based on the deposition rate and the rate of change of deposition rate at the time of data acquisition, including:
[0062] S203B1: Subtract the deposition rates corresponding to adjacent data acquisition times to obtain the deposition rate difference.
[0063] This step is similar to step S2021, and will not be described again here.
[0064] S203B2: Divide the deposition rate difference by the preset data acquisition cycle value and take the absolute value to obtain the deposition acceleration.
[0065] In this step, the deposition acceleration is similar to the rate of change of deposition rate, and since it is an absolute value, it does not contain negative values.
[0066] S203B3: If the deposition acceleration corresponding to the last N data acquisition times first increases and then decreases, and the deposition rate change rate corresponding to the last at least one data acquisition time is less than the preset change rate threshold, and the deposition rate corresponding to the last at least one data acquisition time is less than the preset deposition rate warning threshold, then it is determined to increase the power threshold.
[0067] In this step, N can be a positive integer greater than 0, preset by the staff. The deposition acceleration at adjacent data acquisition times can be compared to determine whether it increased first and then decreased.
[0068] As can be seen from the description of the above embodiments, the embodiments of this disclosure obtain the deposition rate difference by subtracting the deposition rates corresponding to adjacent data acquisition times, and then calculate the deposition acceleration from the deposition rate difference. If the deposition acceleration first increases and then decreases, and the rate of change of the deposition rate corresponding to the last at least one data acquisition time is less than a preset rate of change threshold, and the deposition rate corresponding to the last at least one data acquisition time is less than a preset deposition rate warning threshold, it is determined to increase the power threshold, thereby increasing the power threshold under appropriate conditions, adjusting the power, and ensuring the magnitude and stability of the deposition rate.
[0069] In one possible implementation, in step S204 above, if it is determined that the power threshold needs to be increased, then the minimum and maximum power output values are increased, including:
[0070] S204A1: If it is determined that the power threshold should be increased, then obtain the current minimum power output and the current maximum power output.
[0071] In this step, the current minimum and maximum power output values can be obtained by reading the contents stored in the register.
[0072] S204A2: Divide the deposition acceleration corresponding to the last at least one data acquisition moment by the reference acceleration to obtain the acceleration ratio.
[0073] In this step, the reference acceleration can be a baseline value preset by the staff based on experimental data or experience, used to reflect the standard intensity of the rate change trend. The acceleration ratio is calculated by "current acceleration / reference acceleration" to quantify the relative intensity of the current rate change trend (decreasing or increasing) compared to the standard trend. In one possible implementation, the reference acceleration can be the deposition acceleration when the deposition rate is close to the lower limit of the deposition rate.
[0074] S204A3: Divide the deposition rate corresponding to the last at least one data acquisition moment by the deposition rate reference value to obtain the deposition rate ratio.
[0075] In this step, the deposition rate reference value can be a baseline rate preset by the staff based on experimental data or experience, such as an acceptable lower limit of rate. The deposition rate ratio is calculated by "current rate / reference rate" to quantify the relative difference between the current rate and the baseline value.
[0076] S204A4: Multiply the preset coefficient, acceleration ratio, deposition rate ratio and the current minimum power output to obtain the new minimum power output.
[0077] In this step, the preset coefficient is used to control the sensitivity of the adjustment to avoid the adjustment range being too large or too small; the acceleration ratio and deposition rate ratio together determine the adjustment range. The more insufficient the current rate and the more obvious the trend of change, the larger the two ratios are, and the greater the increase in the new minimum value. Ultimately, "adaptive adjustment according to rate status and trend" is achieved to ensure that the new minimum value can meet the minimum power requirement to maintain the target rate.
[0078] S204A5: Multiply the preset coefficient, acceleration ratio, deposition rate ratio and the current maximum power output to obtain the new maximum power output.
[0079] This step is similar to step S204A4 above, and will not be repeated here.
[0080] As can be seen from the description of the above embodiments, the embodiments of this disclosure ensure the continuity of adjustment based on the current minimum / maximum power output, accurately control the adjustment sensitivity by combining the acceleration ratio and deposition rate ratio with a preset coefficient, and simultaneously optimize the new minimum / maximum power output. This achieves both the adaptive increase of the power threshold with the deposition rate state and trend to meet power replenishment needs and avoids the fluctuation of deposition rate response caused by excessive changes in power parameters. It provides a power adjustment range that adapts to process changes for stabilizing the deposition rate and ensuring film uniformity.
[0081] In one possible implementation, in step S204 above, if it is determined that the power threshold needs to be increased, then the minimum and maximum power output values are increased, including:
[0082] S204B1: If it is determined that the power threshold should be increased, then obtain the current minimum power output and the current maximum power output.
[0083] This step is similar to step S204A1 above, and will not be repeated here.
[0084] S204B2: The average of the current minimum power output and the maximum power output is used to determine the new minimum power output.
[0085] In this step, the average of the current minimum / maximum power output, i.e. the midpoint of the existing adjustment range, is taken as the new minimum value. This achieves a smooth increase in the minimum value, avoiding a sudden increase in power due to an excessively high new minimum value, while ensuring that the increase in the minimum value is reasonable, thus laying the foundation for maintaining the range width in the future.
[0086] S204B3: Subtract the new minimum power output from the current minimum power output to obtain the power difference.
[0087] In this step, the power difference is the minimum increase in power.
[0088] For example, if the new minimum power output is 3kW and the original minimum power output is 1kW, then the power difference is 2kW; or, for another example, if the new minimum power output is 5kW and the original minimum power output is 2kW, then the power difference is 3kW.
[0089] S204B4: Add the power difference to the maximum power output to obtain the new maximum power output.
[0090] In this step, based on the minimum increase in "power difference", the power difference of the same magnitude is added to the current maximum value to obtain a new maximum power output value.
[0091] As can be seen from the description of the above embodiments, the present disclosure embodiments achieve a small increase in the power output range by simultaneously increasing the difference between the minimum and maximum power output values by half. This ensures that the deposition rate quickly reaches a stable state and that the new power adjustment range is consistent with the width of the original range, only shifting upwards overall. This expands the available power range and avoids large fluctuations in the deposition rate due to range changes.
[0092] In one possible implementation, after periodically acquiring the deposition rate, the following is also included:
[0093] S220: If the deposition rate is lower than the preset deposition rate threshold, then the power threshold is increased.
[0094] In this step, the deposition rate threshold can be preset by the operator based on experimental data or experience, or it can be the sum of the minimum deposition rate required by the process and a preset value (slightly greater than the minimum deposition rate required by the process). After determining that the power threshold should be increased, the power threshold can be adjusted using the methods described in steps S204A1 to S204A5 or steps S204B1 to S204B4.
[0095] As can be seen from the description of the above embodiments, the embodiments of this disclosure achieve stable deposition rate that meets process requirements by increasing the power threshold when the deposition rate is lower than the preset deposition rate threshold.
[0096] Figure 3 This is a schematic diagram of the deposition rate control device provided in an embodiment of this application. Figure 3 As shown, the deposition rate control device 300 includes: a rate acquisition module 301, a rate of change determination module 302, a change judgment module 303, a threshold enhancement module 304, and a material deposition module 305.
[0097] The rate acquisition module 301 is used to periodically acquire the deposition rate, and the deposition rate corresponds to the data acquisition time.
[0098] The rate of change determination module 302 is used to determine the rate of change of the deposition rate at the time of data acquisition based on the deposition rate at the time of data acquisition.
[0099] The change judgment module 303 is used to determine whether to increase the power threshold based on the deposition rate and the rate of change of deposition rate at the time of data acquisition.
[0100] The threshold enhancement module 304 is used to increase the minimum and maximum power output values if it is determined that the power threshold needs to be increased.
[0101] Material deposition module 305 is used to deposit a light-emitting layer using an output power greater than the minimum power output and less than the maximum power output.
[0102] In one possible implementation, the rate of change determination module 302 is used to subtract the deposition rates corresponding to adjacent data acquisition times to obtain a deposition rate difference. The deposition rate difference is then divided by a preset data acquisition cycle value to obtain the deposition rate change rate.
[0103] In one possible implementation, the change judgment module 303 is used to determine to increase the power threshold if the deposition rate corresponding to the data acquisition time is less than the preset deposition rate warning threshold and the deposition rate change rate is less than the preset change rate threshold; otherwise, it determines not to increase the power threshold.
[0104] In one possible implementation, the change judgment module 303 is used to subtract the deposition rates corresponding to adjacent data acquisition times to obtain the deposition rate difference. The deposition rate difference is then divided by a preset data acquisition period value, and the absolute value is taken to obtain the deposition acceleration. If the deposition acceleration corresponding to the last N data acquisition times first increases and then decreases, and the rate of change of the deposition rate corresponding to at least the last data acquisition time is less than a preset rate of change threshold, and the deposition rate corresponding to at least the last data acquisition time is less than a preset deposition rate warning threshold, then it is determined that the power threshold should be increased.
[0105] In one possible implementation, the threshold enhancement module 304 is used to, if it is determined that the power threshold should be increased, obtain the current minimum power output value and the current maximum power output value. The deposition acceleration corresponding to the last at least one data acquisition moment is divided by a reference acceleration to obtain the acceleration ratio. The deposition rate corresponding to the last at least one data acquisition moment is divided by a deposition rate reference value to obtain the deposition rate ratio. A preset coefficient, the acceleration ratio, the deposition rate ratio, and the current minimum power output value are multiplied together to obtain a new minimum power output value. A preset coefficient, the acceleration ratio, the deposition rate ratio, and the current maximum power output value are multiplied together to obtain a new maximum power output value.
[0106] In one possible implementation, the threshold enhancement module 304 is used to, if it is determined that the power threshold should be increased, obtain the current minimum power output value and the current maximum power output value. The average of the current minimum and maximum power output values is determined as the new minimum power output value. The new minimum power output value is subtracted from the current minimum power output value to obtain the power difference. The power difference is added to the maximum power output value to obtain the new maximum power output value.
[0107] In one possible implementation, the change judgment module 303 is further configured to determine to increase the power threshold if the deposition rate is lower than a preset deposition rate threshold.
[0108] The apparatus provided in this embodiment can be used to execute the technical solutions of the above method embodiments. Its implementation principle and technical effects are similar, and will not be described again here.
[0109] To implement the above embodiments, this application also provides an electronic device.
[0110] refer to Figure 4 The diagram illustrates a structural schematic of an electronic device 400 suitable for implementing embodiments of this application. The electronic device 400 can be a terminal device or a server. The terminal device can include, but is not limited to, mobile terminals such as mobile phones, laptops, digital radio receivers, personal digital assistants (PDAs), portable Android devices (PADs), portable media players (PMPs), and in-vehicle terminals (e.g., in-vehicle navigation terminals), as well as fixed terminals such as digital TVs and desktop computers. Figure 4 The electronic device shown is merely an example and should not impose any limitation on the functionality and scope of use of the embodiments of this application.
[0111] like Figure 4As shown, the electronic device 400 may include a processor (e.g., a central processing unit, a graphics processing unit, etc.) 401 and a memory 402 communicatively connected to the processor. The processor can perform various appropriate actions and processes based on programs stored in the memory 402, computer-executed instructions, or programs loaded from storage device 408 into random access memory (RAM) 403, implementing the deposition rate control method in any of the above embodiments. The memory may be a read-only memory (ROM). The RAM 403 also stores various programs and data required for the operation of the electronic device 400. The processing device 401, the memory 402, and the RAM 403 are interconnected via a bus 404. An input / output (I / O) interface 405 is also connected to the bus 404.
[0112] Typically, the following devices can be connected to I / O interface 405: input devices 406 including, for example, touchscreens, touchpads, keyboards, mice, cameras, microphones, accelerometers, gyroscopes, etc.; output devices 407 including, for example, liquid crystal displays (LCDs), speakers, vibrators, etc.; storage devices 408 including, for example, magnetic tapes, hard disks, etc.; and communication devices 409. Communication device 409 allows electronic device 400 to communicate wirelessly or wiredly with other devices to exchange data. Although Figure 4 An electronic device 400 with various devices is shown; however, it should be understood that it is not required to implement or possess all of the devices shown. More or fewer devices may be implemented or possessed alternatively.
[0113] Specifically, according to embodiments of this application, the processes described above with reference to the flowcharts can be implemented as computer software programs. For example, embodiments of this application include a computer program product comprising a computer program carried on a computer-readable storage medium, the computer program containing program code for performing the methods shown in the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network via communication device 409, or installed from storage device 408, or installed from memory 402. When the computer program is executed by processing device 401, it performs the functions defined in the methods of embodiments of this application.
[0114] It should be noted that the computer-readable storage medium described above in this application can be a computer-readable signal medium, a computer storage medium, or any combination of the two. A computer-readable storage medium can be, for example,—but not limited to—an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of a computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this application, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. In this application, a computer-readable signal medium can include a data signal propagated in baseband or as part of a carrier wave, carrying computer-readable program code. Such propagated data signals can take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A computer-readable signal medium may also be any computer-readable storage medium other than a computer-readable storage medium, which can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device. The program code contained on the computer-readable storage medium can be transmitted using any suitable medium, including but not limited to: wires, optical fibers, RF (radio frequency), etc., or any suitable combination thereof.
[0115] The aforementioned computer-readable storage medium may be included in the aforementioned electronic device; or it may exist independently and not assembled into the electronic device.
[0116] The aforementioned computer-readable storage medium carries one or more programs, which, when executed by the electronic device, cause the electronic device to perform the method shown in the above embodiments.
[0117] Computer program code for performing the operations of this application can be written in one or more programming languages or a combination thereof, including object-oriented programming languages such as Java, Smalltalk, and C++, and conventional procedural programming languages such as the "C" language or similar programming languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving remote computers, the remote computer can be connected to the user's computer via any type of network—including a Local Area Network (LAN) or a Wide Area Network (WAN)—or can be connected to an external computer (e.g., via the Internet using an Internet service provider).
[0118] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions.
[0119] The modules described in the embodiments of this application can be implemented in software or hardware. The names of the units do not necessarily limit the module itself.
[0120] The functions described above in this document can be performed at least in part by one or more hardware logic components. For example, exemplary types of hardware logic components that can be used, without limitation, include: field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), system-on-a-chip (SoCs), complex programmable logic devices (CPLDs), and so on.
[0121] This application also provides a computer-readable storage medium storing computer-executable instructions. When a processor executes the computer-executable instructions, it implements the technical solution of the deposition rate control method in any of the above embodiments. Its implementation principle and beneficial effects are similar to those of the deposition rate control method, and can be found in the implementation principle and beneficial effects of the deposition rate control method, which will not be repeated here.
[0122] In the context of this application, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.
[0123] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the technical solution of the deposition rate control method in any of the above embodiments. Its implementation principle and beneficial effects are similar to those of the deposition rate control method, and can be found in the implementation principle and beneficial effects of the deposition rate control method, which will not be repeated here.
[0124] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of disclosure in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-described concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.
[0125] Those skilled in the art will understand that all or part of the steps of the above-described method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When executed, the program performs the steps of the above-described method embodiments; and the aforementioned storage medium includes various media capable of storing program code, such as ROM, RAM, magnetic disks, or optical disks.
[0126] Finally, it should be noted that other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein, and is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.
Claims
1. A method for controlling deposition rate, characterized in that, include: The deposition rate is periodically acquired, and the deposition rate corresponds to the data acquisition time. Based on the deposition rate corresponding to the data acquisition time, the deposition rate change rate corresponding to the data acquisition time is determined; the deposition rate change rate is obtained by subtracting the deposition rates corresponding to adjacent data acquisition times to obtain the deposition rate difference, and then dividing the deposition rate difference by a preset data acquisition period. Based on the deposition rate and the rate of change of the deposition rate at the time of data acquisition, it is determined whether to increase the power threshold. If the deposition rate at the time of data acquisition is less than a preset deposition rate warning threshold and the rate of change of the deposition rate is less than a preset rate of change threshold, it is determined to increase the power threshold; otherwise, it is determined not to increase the power threshold. If it is determined that the power threshold should be increased, then the minimum and maximum power output values should be increased. The light-emitting layer is deposited using an output power greater than the minimum power output value and less than the maximum power output value.
2. The method according to claim 1, characterized in that, The step of determining whether to increase the power threshold based on the deposition rate corresponding to the data acquisition time and the rate of change of the deposition rate includes: Subtract the deposition rates corresponding to adjacent data acquisition times to obtain the deposition rate difference; The deposition rate difference is divided by a preset data acquisition cycle value, and the absolute value is taken to obtain the deposition acceleration. If the deposition acceleration corresponding to the last N data acquisition moments first increases and then decreases, and the rate of change of the deposition rate corresponding to the last at least one data acquisition moment is less than the preset rate of change threshold, and the deposition rate corresponding to the last at least one data acquisition moment is less than the preset deposition rate warning threshold, then it is determined to increase the power threshold.
3. The method according to claim 2, characterized in that, The statement that if the power threshold is increased, the minimum and maximum power output values will be increased, includes: If it is determined that the power threshold should be increased, then the current minimum power output and the current maximum power output are obtained. The acceleration ratio is obtained by dividing the deposition acceleration corresponding to the last at least one data acquisition moment by the reference acceleration. Divide the deposition rate corresponding to the last at least one data acquisition moment by the deposition rate reference value to obtain the deposition rate ratio; Multiply the preset coefficient, the acceleration ratio, the deposition rate ratio, and the current minimum power output value to obtain a new minimum power output value; The new maximum power output value is obtained by multiplying the preset coefficient, the acceleration ratio, the deposition rate ratio, and the current maximum power output value.
4. The method according to claim 1 or 2, characterized in that, The statement that if the power threshold is increased, the minimum and maximum power output values will be increased, includes: If it is determined that the power threshold should be increased, then the current minimum power output and the current maximum power output should be obtained. The average of the current minimum power output and the maximum power output is determined as the new minimum power output. The power difference is obtained by subtracting the new minimum power output from the current minimum power output. The power difference is added to the maximum power output value to obtain a new maximum power output value.
5. The method according to any one of claims 1 to 3, characterized in that, Following the periodic acquisition of the deposition rate, the method further includes: If the deposition rate is lower than a preset deposition rate threshold, then it is determined that the power threshold should be increased.
6. An electronic device, characterized in that, include: Memory, processor; The memory stores computer-executed instructions; The processor executes computer execution instructions stored in the memory, causing the processor to perform the method as described in any one of claims 1 to 5.
7. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which, when executed by a processor, are used to implement the method as described in any one of claims 1 to 5.
8. A computer program product, characterized in that, Includes a computer program that, when executed by a processor, implements the method described in any one of claims 1 to 5.
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