Flexible perovskite solar module and preparation method thereof
By adding series bars to the current-carrying strip area of flexible perovskite solar cells, the problem of current transmission loss during encapsulation and bending is solved, thereby improving the output efficiency of the module.
Patent Information
- Application Number
- CN202512033205.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-30
- Publication Date
- 2026-02-03
AI Technical Summary
Flexible perovskite solar cells have low photoelectric conversion efficiency in large-area applications, and the lead strips or metal electrode contact edges are prone to cracking during encapsulation and bending, resulting in current transmission loss.
By adding series bars to the current-carrying area of the perovskite sub-cell and forming multiple parallel current transmission channels through laser etching, the current transmission capacity is enhanced, and cracking is avoided through encapsulation processes.
This improved the encapsulation effect of flexible perovskite modules, reduced current transmission losses, and increased output efficiency.
Smart Images
Figure CN121463646A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of perovskite solar modules, and in particular to a flexible perovskite solar module and its preparation method. Background Technology
[0002] Organic or inorganic hybrid perovskite solar cells have attracted widespread attention from academia and industry due to their advantages such as tunable bandgap and low cost. Currently, the highest photoelectric conversion efficiency of rigid single-junction perovskite solar cells has exceeded 27%. Furthermore, perovskite solar cells are also suitable for flexible applications, such as wearable devices. While the highest efficiency of small-area flexible single-junction perovskite solar cells has exceeded 26%, the photoelectric conversion efficiency of large-area flexible perovskite modules remains lower than that of small-area devices, with the highest efficiency not exceeding 21% (>100cm²). 2 This severely restricts the commercial application of flexible perovskite solar cells.
[0003] In the fabrication of perovskite modules, a laser etching process (P1-P3) is used to achieve series connection within the module. P1 refers to laser etching on conductive glass such as ITO to form individual sub-cell modules. P2, after functional layer deposition, involves selectively removing the perovskite functional layers using laser etching to expose the surface of the bottom electrode, such as ITO. The P2 etching process provides a channel for the connection between the top and bottom electrodes of the module. Finally, after the top electrode is deposited, P3 etching is used to block charge transport on the top electrode surface, thereby forming individual sub-cells.
[0004] In the subsequent encapsulation process of perovskite modules, current-carrying strips are typically attached to their positive and negative electrodes to connect the internal circuitry to the external circuitry. During this process, the film thickness of the metal electrode (e.g., Cu) to which the current-carrying strip is directly attached is typically no more than 300 nm, while the thickness of the current-carrying strip itself is at least 300 μm. In the encapsulation and bending processes of flexible perovskite modules, compared to rigid modules, the flexibility of the substrate easily leads to cracking of the metal film at the contact edges of the current-carrying strip or metal electrode, resulting in a reduction in the power output of the corresponding module. Summary of the Invention
[0005] The main technical problem solved by this invention is to provide a flexible perovskite solar module and its fabrication method. This method increases the number of lines scribed on the P2 sub-cell in the corresponding current-carrying strip application area, providing more current transmission channels for the current-carrying strip attachment of the flexible perovskite module. This method reduces the current transmission loss caused by cracking of the metal film at the contact edge of the current-carrying strip / metal electrode during lamination and bending. Whether the cracking occurs at the positive or negative electrode depends on the module's structure. In a reverse structure, the cracking mostly occurs at the positive electrode; in a reverse structure, it mostly occurs at the negative electrode. This technology effectively improves the encapsulation effect of the flexible perovskite module and enhances its output efficiency.
[0006] To solve the above-mentioned technical problems, the present invention adopts a technical solution as follows: a flexible perovskite solar module, characterized in that it includes multiple perovskite sub-cells connected in series; positive electrode guide strips and negative electrode guide strips are respectively provided on the surface of the perovskite sub-cells at both ends of the multiple perovskite sub-cells connected in series. In at least one of the perovskite sub-cells in which the positive electrode guide bar and the negative electrode guide bar are in direct contact, at least two series bars are arranged in parallel.
[0007] The width of the connecting strip is 20-100um, the spacing between adjacent connecting strips is 10-50um, and two connecting strips are provided.
[0008] Each of the perovskite sub-cells includes a substrate, a functional layer, and a second electrode layer arranged sequentially. The functional layer includes a hole transport layer, a perovskite active layer, and a composite electron transport layer.
[0009] The substrate includes a flexible substrate and a first electrode layer. The first electrode layer is deposited on the flexible substrate. The flexible substrate is made of materials such as PET, PFN, and PI. The first electrode layer is made of ITO. The second electrode layer is a composite electrode layer made of metal materials such as Cu, Ag, and Au and metal oxide materials such as ITO or IZO and IWO.
[0010] The hole transport layer is composed of materials such as NiOx, PTAA, or CuSCN, and the perovskite active layer is composed of FAPbI3 or Cs. x FA 1-x The composite electron transport layer is composed of perovskite materials such as PbI3 (x≤0.2) and C60 and PC. 60 BM, PC 71 It is composed of BM and SnOx.
[0011] The thickness of the first electrode layer is 80-300 nm, the thickness of the composite electrode layer is 80-300 nm, the thickness of the hole transport layer is 10-20 nm, and the thickness of the composite electron transport layer is 10-30 nm.
[0012] The PVK is a perovskite thin film, for example: the perovskite thin film structure can be MA 0.05 Cs 0.05 FA 0.9 Pb(I) 0.95 Br 0.05 3 The multiple perovskite sub-cells connected in series form a sub-cell group, and the flexible perovskite module includes multiple sub-cell groups, with adjacent sub-cell groups connected in series or in parallel.
[0013] This invention also provides a method for preparing a flexible perovskite solar module, comprising the following steps: S1: The first electrode layer is laser-etched and scribed for the first time using a laser, and then the first electrode layer is cleaned. S2: A functional layer is formed on the surface of the first electrode layer, the functional layer comprising a hole transport layer, a perovskite active layer and a composite electron transport layer formed in sequence; S3: Perform a second laser etching scribing on the functional layer, and perform the second laser etching scribing at least twice in the positive electrode current guide area; S4: A composite electrode layer is formed on the surface of the functional layer, and the composite electrode layer is subjected to a third laser etching scribing. S5: Complete the edge cleaning and packaging process.
[0014] The beneficial effects of this invention are: by increasing the number of sub-cell series strips in the corresponding current-guiding strip application area, more current transmission channels are provided for the current-guiding strip attachment of flexible perovskite modules, and the current transmission loss problem caused by cracking of the metal film at the contact edge of the current-guiding strip / metal electrode during lamination and bending is avoided. This technology can effectively improve the encapsulation effect of flexible perovskite modules and enhance their output efficiency. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of the structure of the flexible perovskite solar cell module of the present invention.
[0016] Figure 2 This is a schematic diagram of the structure of a conventional rigid perovskite solar cell module.
[0017] Figure 3 This is a schematic diagram of the thin film cracking at the edge of a conventional rigid perovskite solar cell module. Detailed Implementation
[0018] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, so that the advantages and features of the invention can be more easily understood by those skilled in the art, thereby providing a clearer and more explicit definition of the scope of protection of the present invention.
[0019] The present invention provides a reverse flexible perovskite solar cell module structure, which includes a substrate 10, a functional layer 20 and a composite electrode layer 30 arranged sequentially from bottom to top; wherein the substrate 10 includes a flexible substrate and a first electrode layer, the first electrode layer being deposited on the flexible substrate, and the functional layer 20 is composed of a hole transport layer 21, a perovskite active layer 22 and an electron transport layer stacked sequentially. The flexible substrate is PET; The material of the first electrode layer can be selected from any one of IZO, ITO, IWO, etc. The hole transport layer 21 can be made of one or a combination of two of NiOx, Cu2O, PTAA, PEDOT:PSS, 4PACz, MeOPACz, etc., for efficient hole transport and blocking of electrons; The material of the perovskite active layer 22 is selected from FAPbI3, CsPbI2Br, and Cs 0.05 FA 0.95 PbI3, Cs 0.05 FA 0.95 Pb(I 0.95 Br 0.05 One of the three methods is to achieve effective absorption of the solar spectrum; The electron transport layer is made of a material selected from C60, SnOx, PC71BM, Y6, etc., and preferably, C60 and SnOx can be used to form a composite electron transport layer 23 to optimize interface charge transport and device stability. Each functional layer 20 is prepared sequentially through a specific process to form a stacked structure with high photoelectric conversion performance.
[0020] In the subsequent encapsulation process of perovskite modules, current-carrying strips need to be attached to their positive and negative electrodes to output the internal circuitry to the external circuitry. During this process, the thickness of the second electrode directly attached to the current-carrying strip is typically no more than 300 nm, while the thickness of the current-carrying strip itself is at least 300 μm. In the encapsulation and bending process of flexible perovskite modules, compared to rigid modules, the flexibility of the substrate 10 easily leads to cracking of the metal film at the contact edges between the positive and negative current-carrying strips and the metal electrodes, resulting in a reduction in the power output of the corresponding module. Therefore, for inverted perovskite modules, at least two parallel series bars are provided on the sub-cell functional layer 20 corresponding to the positive electrode current guide bar 1 region (the series bar is the connection channel between the first electrode and the substrate 10 formed by deposition after P2 etching of the functional layer), which increases the current transmission channels between the electrode and the series bar in the positive electrode current guide bar region. The spacing between adjacent P2 etching lines is 10-50um, and the width of the P2 groove is 20-100um.
[0021] Conversely, for formal perovskite modules, at least two parallel series bars should be set on the sub-cell functional layer corresponding to the negative electrode current guide bar area to increase the current transmission channels between the electrode in the negative electrode current guide bar area and the series bars.
[0022] This invention also provides a method for preparing a perovskite solar cell module, comprising the following steps: Figure 1 This invention provides an embodiment of an inverted perovskite solar cell module. In this embodiment, the flexible substrate is made of PET. In step one, a laser is used to perform a first laser etching scribing (i.e., P1 scribing) on the first electrode layer. P1 is etched into the flexible substrate (not shown in the figure), completely cutting off the first electrode layer. This is used to divide the first electrode layer into multiple independent and electrically isolated sub-cell modules, laying the foundation for the subsequent series structure of the cells. After etching, the first electrode layer is then cleaned to remove surface impurities and contaminants, ensuring the deposition quality of subsequent functional layers 20. The thickness of the first electrode layer is 80 nm. In step two, a 10 nm NiOx thin film is deposited as the hole transport layer 21 using magnetron sputtering. Magnetron sputtering allows for precise control of the film thickness and uniformity, resulting in excellent performance of the hole transport layer 21. On this hole transport layer 21, a perovskite solution (the perovskite precursor solution has the following structure: MA) is deposited using a slot coating process. 0.05 Cs 0.05 FA 0.9 Pb(I) 0.95 Br 0.05 3. The specific formulation of each component is as follows: CsI 19.5 mg, MABr 8.4 mg, FAI 19.5 mg, PbI2 659.5 mg, PbBr2 27.5 mg; a mixed solvent system is used, with a volume ratio of 2-ME:DMF:DMSO of 8:1:1, to finally form a perovskite solution with a concentration of 1.0 M, forming a wet film.
[0023] After drying, the wet film undergoes annealing and crystallization to obtain a high-performance perovskite active layer 22 with a thickness of 400 nm. The annealing and crystallization process facilitates the growth and structural optimization of the perovskite crystals, improving their absorption of sunlight and photoelectric conversion capabilities. After annealing and drying, 20 nm of C60 is deposited using vacuum evaporation, and 10 nm of SnOx is deposited using atomic layer deposition as a composite electron transport layer 23. In step three, a second laser etching scribing (i.e., P2 scribing) is performed on the aforementioned functional layer 20. The purpose of P2 scribing is to selectively remove part of the functional layer 20, exposing the first electrode layer of the substrate 10, and providing a channel for the subsequent connection between the composite electrode layer 30 and the first electrode layer of the substrate 10. In order to prevent the cracking of the metal film at the contact edge of the current guide strip and the metal electrode during lamination and bending, at least two parallel P2 etching lines are provided on the sub-cell functional layer 20 corresponding to the positive electrode current guide strip 1 region, so as to increase the current transmission channel between the electrode and the series strip in the positive electrode current guide strip 1 region; preferably, at least two parallel P2 etching lines can also be provided on the sub-cell functional layer 20 corresponding to the negative electrode current guide strip 2 region. Step 4: 20 nm ITO and 100 nm Cu are deposited sequentially using magnetron sputtering technology as composite electrode layer 30. Then, the composite electrode layer 30 is subjected to a third laser etching scribing (i.e., P3 scribing). The P3 scribing is used to cut off the surface conductive path of the composite electrode to achieve electrical isolation between sub-cells. The thickness of the composite electrode layer 30 is 120 nm. In step five, a fourth laser etching process (P4 etching) is performed to complete the edge cleaning and encapsulation process, thus completing the fabrication of the corresponding flexible perovskite solar module. The P4 edge cleaning operation can remove excess material from the edges of the battery, improving the appearance quality and stability of the battery. The encapsulation process uses encapsulation materials to seal the battery, preventing external environmental factors (such as moisture, oxygen, etc.) from affecting the battery performance, thereby completing the fabrication of the corresponding flexible perovskite solar module.
[0024] Electrode structure Isc (A) Voc (V) FF PCE (%) conventional structure 0.516 42.72 0.74 18.23 Structure of the present invention 0.537 42.70 0.76 19.36 The performance of flexible components with different electrode structures after lamination and encapsulation is shown in the table above. Their open-circuit voltages (Voc) are similar (42.72V for the conventional structure, 42.70V for the structure of this invention). Furthermore, compared to conventional flexible components, the flexible electrode structure component proposed in this invention exhibits a larger current (Isc) (0.537 A for the structure of this invention, 0.516 A for the conventional structure). This result indicates that, after the encapsulation process, the electrode structure proposed in this invention helps reduce component current output loss. Similarly, the flexible electrode structure component proposed in this invention also shows better fill power (FF) performance than the conventional structure component.
[0025] In summary, this invention proposes a flexible perovskite module electrode structure. This method, combined with the P2 scribing process in the edge electrode region, increases the number of P2 scribing lines in the corresponding current strip bonding area of the sub-cell. This structure provides more current transmission channels for the current strip bonding of the flexible perovskite module and avoids the current transmission loss problem caused by the cracking of the metal film at the contact edge of the current strip / metal electrode during lamination and bending. This technology can effectively improve the packaging effect of the flexible perovskite module and enhance its output efficiency.
[0026] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.
Claims
1. A flexible perovskite solar module, characterized in that, It includes multiple perovskite sub-cells connected in series; positive electrode guide strips (1) and negative electrode guide strips (2) are respectively provided on the surface of the perovskite sub-cells at both ends of the multiple perovskite sub-cells connected in series. In at least one of the perovskite sub-cells in which the positive electrode guide bar (1) and the negative electrode guide bar (2) are in direct contact, at least two series bars are arranged in parallel.
2. The flexible perovskite solar module according to claim 1, characterized in that, The width of the connecting strip is 20-100um, the spacing between adjacent connecting strips is 10-50um, and two connecting strips are provided.
3. A flexible perovskite solar module according to claim 2, characterized in that, Each of the perovskite sub-cells includes a substrate (10), a functional layer (20), and a second electrode layer (30) arranged sequentially.
4. A flexible perovskite solar module according to claim 3, characterized in that, The substrate (10) includes a flexible substrate and a first electrode layer, the first electrode layer being deposited on the flexible substrate, and the functional layer including a hole transport layer (21), a perovskite active layer (22), and a composite electron transport layer (23).
5. A flexible perovskite solar module according to claim 4, characterized in that, The flexible substrate is made of PET material, the first electrode layer is made of ITO, and the second electrode layer is a composite electrode layer (30) made of Cu metal material and ITO metal oxide material.
6. A flexible perovskite solar module according to claim 5, characterized in that, The hole transport layer (21) is composed of NiOx, and the perovskite active layer (22) is composed of FAPbI3 and Cs. x FA 1-x The composite electron transport layer (30) is composed of PbI3 perovskite material and C60 and SnOx.
7. A flexible perovskite solar module according to claim 6, characterized in that, The thickness of the first electrode layer is 80-300nm, the thickness of the composite electrode layer (30) is 80-300nm, the thickness of the hole transport layer (21) is 10-20nm, and the thickness of the composite electron transport layer (23) is 10-30nm.
8. A flexible perovskite solar module according to claim 7, characterized in that, The PVK is a perovskite thin film, and the perovskite thin film structure is MA. 0.05 Cs 0.05 FA 0.9 Pb(I) 0.95 Br 0.05 3.
9. A flexible perovskite solar module according to claim 1, characterized in that, The multiple perovskite sub-cells connected in series form a sub-cell group, and the flexible perovskite module includes multiple sub-cell groups, with adjacent sub-cell groups connected in series or in parallel.
10. A method for fabricating a flexible perovskite solar module, comprising the flexible perovskite solar module as described in claims 1-9, characterized in that, Includes the following steps: S1: The first electrode layer is laser-etched and scribed for the first time using a laser, and then the first electrode layer is cleaned. S2: A functional layer (20) is formed on the surface of the first electrode layer, the functional layer comprising a hole transport layer (21), a perovskite active layer (22) and a composite electron transport layer (23) formed in sequence. S3: Perform a second laser etching scribing on the functional layer (20), and perform the second laser etching scribing at least twice in the positive electrode drain strip (1) area; S4: A composite electrode layer (30) is formed on the surface of the functional layer (20), and the composite electrode layer (30) is laser-etched for the third time; S5: Complete the edge cleaning and packaging process.