Continuous ring-shaped vacuum coating system and coating method

Abstract

This invention discloses a continuous annular vacuum coating system and method, belonging to the field of vacuum coating technology. The system includes a production line body and a transport mechanism arranged in a closed-loop layout. A chemical vapor deposition (CVD) zone, an isolation module, and a physical vapor deposition (PVD) zone are sequentially arranged adjacently within the process channel. The isolation module includes a flow resistance channel, an annular differential pumping groove, and a jetting unit. The inner wall of the flow resistance channel precisely matches the contour of the carrier to form a tiny slit gap. The annular differential pumping groove is recessed circumferentially in the middle of the channel and connected to an independent high-vacuum pump group to establish a circumferentially uniform vacuum isolation zone. The jetting unit forms a reverse aerodynamic barrier. This invention, through the coupling effect of geometric flow restriction, differential pumping, and aerodynamic barrier, constructs a high-gradient and stable differential pressure isolation environment between the CVD and PVD zones without physical gate valve obstruction, achieving efficient continuous integration of the two processes.

Description

Technical Field

[0001] This invention relates to the field of vacuum coating equipment and process technology, and in particular to a continuous annular vacuum coating system and coating method that can integrate chemical vapor deposition and physical vapor deposition processes in the same closed-loop path. Background Technology

[0002] In the fields of consumer electronics, automotive displays, and precision optical device manufacturing, to impart composite functions such as fingerprint resistance, anti-reflection, high hardness, or easy cleaning to the substrate surface, it is usually necessary to continuously deposit multiple layers of films with different properties on the substrate surface. A typical composite film preparation process includes: firstly, depositing an organosilicon polymer base layer on the substrate surface to repair microscopic defects and enhance film adhesion; then depositing multiple layers of oxide or metal optical films to achieve optical properties; and finally depositing a hydrophobic and oleophobic layer to improve surface feel and stain resistance.

[0003] In existing technologies, the preparation of the aforementioned composite films typically employs a segmented production model. This involves first preparing the base coating using chemical vapor deposition (CVD) on a first production line, then removing the product and exposing it to the atmosphere before transferring it to a second magnetron sputtering (PVD) production line to prepare the optical film. This segmented operation results in a cumbersome production process, high logistics costs, and the substrate is highly susceptible to absorbing dust or moisture from the air during its transfer between different processes. This can lead to decreased interlayer adhesion or surface defects, severely hindering the improvement of product yield.

[0004] To address these issues, the industry has attempted to develop continuous coating production lines, aiming to integrate CVD and PVD processes within the same vacuum system. However, these two processes have significantly different and incompatible vacuum environment requirements. Chemical vapor deposition (CVD), especially plasma-enhanced CVD using organic precursors such as hexamethyldisiloxane (HMDSO), typically requires operation at high process pressures and within a reaction chamber filled with highly adhesive and diffusive reactive gases. Physical vapor deposition (PVD), on the other hand, requires lower background vacuum and a high-purity inert gas environment. Without effective isolation between the two, the reactive precursors in the CVD region diffuse down the pressure gradient into the PVD region. Once these reactive gases come into contact with the sputtering cathode, they react on the target surface to form an insulating compound layer, altering the target's conductivity and triggering severe micro-arc discharges. This can even lead to anode surface insulation and anode disappearance, making the sputtering process unstable.

[0005] Traditional isolation methods typically involve using physical gate valves between different process chambers. However, this requires intermittent, step-by-step substrate transfer, resulting in low efficiency and frequent mechanical opening and closing of the gate valves, which can easily lead to particulate contamination. Another common approach is to use a labyrinthine baffle structure, but simply increasing the geometric path length is insufficient to establish a sufficiently large pressure gradient in the micrometer- or millimeter-scale transfer channels, failing to completely block the diffusion and migration of gas molecules. Therefore, achieving reliable gas isolation between the relatively high process gas pressure CVD zone and the relatively low background gas pressure PVD zone while ensuring continuous and stable substrate transfer is a key technical challenge that urgently needs to be addressed for continuous composite coating production. Summary of the Invention

[0006] This invention provides a continuous annular vacuum coating system and coating method, which can construct a high-gradient and stable differential pressure isolation environment between the chemical vapor deposition region and the physical vapor deposition region in a continuous transmission channel without physical gate valves. This is based on the coupling mechanism of geometric flow conduction limitation, differential pumping and aerodynamic momentum suppression, so as to completely block process gas crosstalk and realize the interference-free continuous integration of chemical vapor deposition process and physical vapor deposition process in the same closed loop system.

[0007] To achieve the above objectives, the present invention provides a continuous annular vacuum coating system, comprising a production line body extending in a closed loop and a transfer mechanism, wherein the transfer mechanism includes a carrier for carrying a substrate to move along the extension path of the production line body;

[0008] The main body of the production line sequentially defines a loading and unloading area, a sample inlet lock chamber, a process channel, and a sample outlet lock chamber along its extension path. The sample inlet lock chamber and the sample outlet lock chamber are respectively connected to the two ends of the loading and unloading area, thereby forming a closed loop together with the process channel.

[0009] The process channel maintains a vacuum environment and includes a chemical vapor deposition zone, an isolation module, and a physical vapor deposition zone arranged sequentially and adjacently along the direction of movement of the carrier.

[0010] The isolation module includes:

[0011] A flow-resistance channel, connecting the chemical vapor deposition region and the physical vapor deposition region, has an inner wall profile configured to match the outer profile of the carrier, thereby defining a slit gap between the carrier and the inner wall of the flow-resistance channel, the slit gap being configured to restrict the flow conduction of gas molecules through geometric gaps;

[0012] An annular differential pumping groove is recessed circumferentially in the middle inner wall of the flow resistance channel. The annular differential pumping groove is connected to an independent high vacuum pump group to establish a vacuum isolation zone in the middle section of the flow resistance channel.

[0013] An injection unit is disposed at one end of the flow resistance channel near the physical vapor deposition zone, and is used to inject an inert gas with directional momentum into the flow resistance channel to form an aerodynamic barrier within the flow resistance channel.

[0014] The transmission mechanism includes a closed-loop guide rail laid along the bottom of the main body of the production line and a plurality of drive units spaced apart along the extension direction of the closed-loop guide rail; wherein, the drive unit located in the chemical vapor deposition zone and the drive unit located in the physical vapor deposition zone are respectively electrically connected to an independent servo controller to drive the carrier to run at different speeds in the chemical vapor deposition zone and the physical vapor deposition zone.

[0015] The drive unit includes a servo motor disposed outside the main body of the production line, a sealing assembly passing through the wall of the main body of the production line, and a friction drive wheel disposed inside the main body of the production line and in frictional engagement with the carrier. The drive shaft of the servo motor passes through the sealing assembly and is used to drive the friction drive wheel to rotate.

[0016] The drive unit located within the chemical vapor deposition zone also includes an anti-deposition shield, which is disposed outside the friction drive wheel. The top of the anti-deposition shield has a contact window for the rim of the friction drive wheel to extend out. The anti-deposition shield is connected to an inert gas source to maintain a local positive pressure inside the anti-deposition shield that is higher than the background gas pressure of the chemical vapor deposition zone.

[0017] Preferably, the injection unit includes a plurality of flat nozzles arranged circumferentially around the inner wall of the flow resistance channel. Each flat nozzle has a narrow rectangular outlet. The injection axis of the flat nozzle is inclined toward the chemical vapor deposition zone, so that the inert gas ejected from the flat nozzle forms a sheet-like reverse blocking airflow pointing toward the chemical vapor deposition zone, thereby using gas momentum to suppress the diffusion of process gas from the chemical vapor deposition zone to the physical vapor deposition zone.

[0018] Preferably, the flow resistance channel is provided with an independently temperature-controlled heating component, which is configured to maintain the inner wall temperature of the flow resistance channel at a preset temperature. The preset temperature is higher than the liquefaction temperature of the precursor of the chemical vapor deposition reaction under the working gas pressure in the chemical vapor deposition zone, so as to prevent the precursor or by-product of the chemical vapor deposition reaction from condensing and accumulating in the flow resistance channel.

[0019] Preferably, the main body of the production line has a rectangular loop layout, and the process channel includes a straight process section and a corner connection section; the isolation module is set in the straight process section and located between the chemical vapor deposition zone and the physical vapor deposition zone to ensure that the carrier passes through the flow resistance channel in a straight movement state.

[0020] Preferably, the continuous annular vacuum coating system further includes a control system and a vacuum gauge for measuring the gas pressure in the flow resistance channel;

[0021] The control system is communicatively connected to the vacuum gauge and the sputtering power supply of the physical vapor deposition zone. The control system is configured to: read the pressure feedback value of the vacuum gauge in real time, and only send an enable signal to the sputtering power supply of the physical vapor deposition zone when the pressure feedback value is lower than a preset pressure threshold; otherwise, forcibly cut off the output of the sputtering power supply of the physical vapor deposition zone.

[0022] The present invention also provides a coating method using the above-mentioned continuous annular vacuum coating system, comprising the following steps:

[0023] S1. The substrate is loaded onto the carrier in the loading and unloading area, and the carrier is sent into the process channel through the sample injection lock chamber;

[0024] S2. Deposit an undercoat layer on the substrate surface within the chemical vapor deposition zone;

[0025] S3. Drive the vehicle into the isolation module, use the high vacuum pump group connected to the annular differential pumping tank to pump air to establish a vacuum isolation zone in the middle of the flow resistance channel, and turn on the injection unit to inject inert gas into the flow resistance channel to form an aerodynamic barrier in the flow resistance channel, thereby establishing a differential pressure isolation environment between the chemical vapor deposition zone and the physical vapor deposition zone.

[0026] S4. Drive the carrier through the isolation module into the physical vapor deposition region to deposit a multilayer optical film system on the substrate;

[0027] S5. The carrier is sent into the sample release chamber, and a hydrophobic layer is deposited on the substrate in the sample release chamber. Then, the vacuum in the sample release chamber is broken and the gas is released. Finally, the carrier is sent out to the loading and unloading area and the substrate is removed from the carrier.

[0028] One or more technical solutions provided in this invention have at least the following technical effects or advantages:

[0029] This invention successfully constructs a high-gradient and stable differential pressure isolation environment between the chemical vapor deposition (CVD) and physical vapor deposition (PVD) zones by integrating a flow-resistance channel, an annular differential extraction groove, and an injection unit within the process channel. Specifically, the invention utilizes the slit gap formed by the precise fit between the inner wall of the flow-resistance channel and the outer contour of the carrier to significantly restrict the flow of gas molecules through geometric gaps, forming a passive first line of defense. Simultaneously, the injection unit injects inert gas with directional momentum into the channel, forming a strong aerodynamic barrier that effectively inhibits the diffusion and migration of process gases through momentum transfer effects, forming an active second line of defense. Finally, in conjunction with the annular differential extraction groove located in the middle of the channel, a negative pressure zone is established in the isolation area to efficiently remove diffused gases and curtain gases. This isolation mechanism, based on the coupling of geometric constraints, momentum suppression, and differential pumping, completely blocks the diffusion path of reactive gases from the chemical vapor deposition zone to the physical vapor deposition zone, thereby eliminating the risks of target poisoning and micro-arc discharge, and ensuring the stable integration of two processes with vastly different pressure levels within the same closed loop.

[0030] Thanks to the aforementioned reliable isolation system, the main body of the production line of this invention can adopt a continuous transport layout without physical gate valves. The transport mechanism drives the carrier to move continuously along a closed-loop path, eliminating the need for frequent on-off switching or valve opening and closing between process zones as required by traditional equipment. This not only significantly improves the substrate transport efficiency and production cycle time but also avoids particulate contamination caused by mechanical valve movements, thereby improving the yield and film quality of composite coated products. Attached Figure Description

[0031] Figure 1 This is a schematic plan view of the overall structure of a continuous annular vacuum coating system provided in an embodiment of the present invention;

[0032] Figure 2 This is a schematic diagram of the longitudinal cross-sectional structure of the isolation module in this invention;

[0033] Figure 3 This is a schematic cross-sectional view of the driving unit located in the chemical vapor deposition zone in this invention.

[0034] Explanation of reference numerals in the attached drawings: 10. Main body of the production line; 11. Loading and unloading area; 12. Sample injection lock chamber; 13. Process channel; 131. Chemical vapor deposition zone; 132. Physical vapor deposition zone; 14. Sample exit lock chamber; 20. Transfer mechanism; 21. Carrier; 22. Closed-loop guide rail; 23. Drive unit; 231. Servo motor; 232. Sealing assembly; 233. Friction drive wheel; 234. Anti-deposition shield; 2341. Contact window; 30. Isolation module; 31. Flow resistance channel; 311. Slit gap; 312. Heating assembly; 32. Annular differential suction groove; 321. High vacuum pump group; 33. Injection unit; 331. Flat nozzle; 40. Control system; 41. Vacuum gauge. Detailed Implementation

[0035] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0036] See Figure 1 This embodiment provides a continuous annular vacuum coating system, which includes a production line body 10 extending in a closed loop and a transfer mechanism 20. The transfer mechanism 20 is used to drive a carrier 21 carrying a substrate to move continuously along the extension path of the production line body 10.

[0037] The main body of the production line 10 sequentially defines a loading / unloading area 11, a sample inlet lock chamber 12, a process channel 13, and an outlet lock chamber 14 along its extension path. The sample inlet lock chamber 12 and the outlet lock chamber 14 are respectively connected to the two ends of the loading / unloading area 11, thus forming a closed loop together with the process channel 13. In this embodiment, the main body of the production line 10 has an overall rectangular loop layout, and the process channel 13 includes a straight process section and a corner connection section. To facilitate high-precision isolation processes, this embodiment places the isolation module 30 in the straight process section, avoiding the problem of clearance control failure caused by the chord height effect during the turning process of the carrier 21.

[0038] The process channel 13 maintains a vacuum environment and includes a chemical vapor deposition region 131, an isolation module 30, and a physical vapor deposition region 132 arranged sequentially adjacent to each other along the movement direction of the carrier 21. The chemical vapor deposition region 131 is used to deposit an undercoat on the substrate, and the physical vapor deposition region 132 is used to deposit an optical film system on the substrate.

[0039] See Figure 2The isolation module 30 is disposed between the chemical vapor deposition region 131 and the physical vapor deposition region 132, and its core component is the flow resistance channel 31. The inner wall contour of the flow resistance channel 31 is constructed to precisely match the outer contour of the carrier 21. When the carrier 21 passes through the flow resistance channel 31, a tiny slit gap 311 is defined between the outer surface of the carrier 21 and the inner wall of the flow resistance channel 31.

[0040] The internal dimensions of the flow resistance channel 31 are customized according to the outer contour of the carrier 21. For example, if the cross-sectional width of the carrier 21 is 500 mm and the height is 800 mm, then the internal width of the flow resistance channel 31 is designed to be 503 mm and the height is designed to be 803 mm. When the carrier 21 passes through, a uniform slit gap 311 of approximately 1.5 mm is formed around it.

[0041] In this embodiment, the size of the slit gap 311 is controlled between 0.5 mm and 2.0 mm. The extremely narrow geometric gap significantly restricts the flow of gas molecules, thus forming a first-level passive physical isolation.

[0042] To eliminate potential dead zones in single-point evacuation, a ring-shaped differential evacuation groove 32 is recessed circumferentially on the inner wall of the flow resistance channel 31. This ring-shaped differential evacuation groove 32 remains connected to the upper, lower, and side walls of the flow resistance channel 31, forming a circumferentially connected expanded space surrounding the carrier 21. The cross-sectional width of the ring-shaped differential evacuation groove 32 is designed to be significantly larger than the slit gap 311; for example, the cross-sectional width of the ring-shaped differential evacuation groove 32 is 50 mm, while the cross-sectional width of the slit gap 311 is 1.5 mm. The ring-shaped differential evacuation groove 32 is connected to an independent high-vacuum pump unit 321 via a large-diameter pipeline. Based on vacuum physics principles, since the gas conductance inside the ring-shaped differential evacuation groove 32 is much greater than that at the slit gap 311, even if the high-vacuum pump unit 321 is connected to the groove body of the ring-shaped differential evacuation groove 32 only at a single point or a few points, a pressure-equilibrium vacuum trapping zone can be established within the entire ring-shaped differential evacuation groove 32. Any process gas attempting to diffuse through the slit gap 311 is rapidly removed once it enters the annular differential evacuation groove 32, thereby establishing a circumferentially uniform high vacuum isolation zone in the middle section of the flow resistance channel 31.

[0043] To achieve extremely high pumping speeds, the high vacuum pump unit 321 preferably uses a unit consisting of a Roots pump and a screw pump connected in series, or a combination of a Roots pump and a molecular pump for high pumping speed requirements.

[0044] In addition, an injection unit 33 is provided at one end of the flow resistance channel 31 near the physical vapor deposition zone 132. Combined with... Figure 2As shown, the injection unit 33 includes multiple flat nozzles 331 arranged circumferentially around the inner wall of the flow resistance channel 31, each flat nozzle 331 having a narrow rectangular outlet. The injection axis of the flat nozzles 331 is inclined towards the chemical vapor deposition zone 131, causing the injected inert gas (such as argon) to form a sheet-like reverse blocking airflow pointing towards the chemical vapor deposition zone 131. This airflow uses the momentum transfer effect to suppress the diffusion of process gas from upstream to the physical vapor deposition zone 132, constituting a second-stage active aerodynamic isolation.

[0045] Preferably, the spray angle of the flat nozzle 331 is designed to be 45 degrees opposite to the direction of movement of the carrier 21. The external high-purity argon gas source is sent into the gas distribution channel after being stabilized by a mass flow meter, and finally sprayed out at high speed from the flat nozzle 331 to form an air curtain.

[0046] To address the issue of solid byproducts generated during chemical vapor deposition (CVD), an independently temperature-controlled heating element 312 is embedded within the wall of the flow resistance channel 31. The heating element 312 is configured to maintain the inner wall temperature of the flow resistance channel 31 at a preset temperature, which is higher than the liquefaction temperature of the CVD reaction precursor under the working gas pressure. Continuous heating effectively prevents the condensation and accumulation of precursors or reaction byproducts on the narrow inner wall of the flow resistance channel 31, thereby ensuring the dimensional stability of the slit gap 311 and the long-term reliable operation of the system.

[0047] Specifically, the upper and lower mold bases of the flow resistance channel 31 are provided with a number of blind mounting holes distributed along the channel extension direction or perpendicular to the direction. The heating assembly 312 specifically includes stainless steel armored electric heating rods inserted into these blind mounting holes. The space between the electric heating rod and the hole wall is filled with thermally conductive insulating powder or fixed by interference fit to ensure efficient heat transfer to the inner wall surface of the flow resistance channel 31. In addition, a K-type thermocouple or a PT100 temperature sensor is also embedded in the wall of the flow resistance channel 31 for real-time monitoring of the wall temperature and feedback to the temperature controller to achieve closed-loop PID temperature control. In this embodiment, the heating assembly 312 keeps the inner wall temperature constant between 120°C and 150°C. This temperature range can effectively prevent the liquefaction and condensation of commonly used CVD precursors such as TEOS (tetraethyl orthosilicate).

[0048] See Figure 2To ensure the safety of the process environment in the physical vapor deposition zone 132, this embodiment also includes a vacuum gauge 41. The probe of the vacuum gauge 41 is located between the annular differential evacuation tank 32 and the physical vapor deposition zone 132, i.e., on the clean gas side after isolation by the annular differential evacuation tank 32. The system also includes a control system 40, which is communicatively connected to both the vacuum gauge 41 and the sputtering power supply of the physical vapor deposition zone 132. The control system 40 reads the pressure feedback value of the vacuum gauge 41 in real time and executes interlock logic: only when the pressure feedback value is lower than a preset pressure threshold is an enable signal sent to the sputtering power supply of the physical vapor deposition zone 132; if an abnormal pressure increase is detected, it indicates that the isolation has failed, and the control system 40 will forcibly cut off the output of the sputtering power supply of the physical vapor deposition zone 132 to prevent target poisoning.

[0049] See Figure 1 The transmission mechanism 20 includes a closed-loop guide rail 22 laid along the bottom of the main body 10 of the production line and a plurality of drive units 23 spaced apart along the extension direction of the closed-loop guide rail 22.

[0050] In this embodiment, the closed-loop guide rail 22 is specifically selected as a V-shaped guide rail or a rectangular guide rail made of stainless steel. The surface of the closed-loop guide rail 22 is hardened to withstand vacuum load friction. The closed-loop guide rail 22 is mounted on the bottom wall of the production line body 10 through insulating ceramic pads to achieve electrical isolation from the cavity, facilitating the application of bias voltage in subsequent processes. The carrier 21 includes a frame-type carrier body and a roller assembly mounted on the bottom of the body. The roller assembly includes vertical rollers for load bearing and horizontal side guide rollers for guidance. The vertical rollers roll in cooperation with the top surface of the closed-loop guide rail 22, and the horizontal side guide rollers are clamped on the side of the closed-loop guide rail 22, thereby constraining the carrier 21 to slide smoothly along a predetermined trajectory. Friction plates are also provided on the side or bottom of the carrier 21 for contacting the friction drive wheel 233 of the drive unit 23.

[0051] Considering the different requirements for transmission speed in different processes, the drive unit 23 located in the chemical vapor deposition zone 131 and the drive unit 23 located in the physical vapor deposition zone 132 are electrically connected to independent servo controllers. This partitioned control architecture allows the carrier 21 to operate at a lower speed in the chemical vapor deposition zone 131 to ensure film thickness, while operating at a higher speed in the physical vapor deposition zone 132 to meet cycle time or multilayer film deposition requirements.

[0052] See Figure 3The drive unit 23 employs an externally mounted, sealed transmission structure. Specifically, the drive unit 23 includes a servo motor 231 disposed on the atmospheric side outside the production line body 10, a sealing assembly 232 passing through the wall of the production line body 10, and a friction drive wheel 233 disposed on the vacuum side inside the production line body 10. The drive shaft of the servo motor 231 passes through the sealing assembly 232 and connects to the friction drive wheel 233. The friction drive wheel 233 is driven to move along the closed-loop guide rail 22 through frictional contact with the bottom of the carrier 21. In this embodiment, the sealing assembly 232 is preferably a magnetohydrodynamic sealing assembly to ensure excellent dynamic vacuum sealing performance under high-speed rotation conditions.

[0053] Specifically, the output shaft of the servo motor 231 is connected to a drive shaft via a coupling (such as a swivel coupling or a diaphragm coupling). This drive shaft extends through the wall of the production line body 10 into the vacuum chamber. Inside the vacuum chamber, the end of the drive shaft is fixed to a friction drive wheel 233 via a key connection or an expansion sleeve connection. The outer edge of the friction drive wheel 233 is covered with a high-friction coefficient vacuum-suitable rubber (such as fluororubber) or engineering plastic (such as PEEK), and drives the carrier 21 forward by contacting friction plates on the side or bottom of the carrier 21 using friction force.

[0054] In this embodiment, the sealing component 232 is specifically selected as a magnetohydrodynamic sealing device. It utilizes a magnetic field to bind magnetic liquid to form a multi-stage "liquid O-ring", achieving a zero-leakage and wear-free sealing effect when the drive shaft rotates at high speed, which is particularly suitable for the high vacuum environment of the PVD zone.

[0055] Specifically, to address the highly corrosive and adhesive gas environment within the chemical vapor deposition zone 131, the drive unit 23 located in this zone is equipped with an anti-deposition shield 234. The anti-deposition shield 234 is hemispherical or box-shaped and covers the outside of the friction drive wheel 233, with a contact window 2341 at its top for the rim of the friction drive wheel 233 to extend out. The anti-deposition shield 234 is connected to an external inert gas source via piping. During operation, the inert gas source continuously fills the anti-deposition shield 234 with nitrogen or argon gas, making its internal pressure slightly higher than the background pressure of the chemical vapor deposition zone 131. This localized micro-positive pressure design creates an outward airflow at the contact window 2341, effectively preventing external reactive gases and dust from entering the shield, thereby protecting precision bearings and transmission components from contamination and jamming.

[0056] This embodiment provides a coating method using the above-described system, comprising the following steps:

[0057] S1. Loading and Sample Injection: The substrate is loaded onto the carrier 21 in the loading and unloading area 11. After vacuum replacement is completed in the sample injection lock chamber 12, the carrier 21 is sent into the process channel 13.

[0058] S2, Undercoat Deposition: The carrier 21 enters the chemical vapor deposition zone 131. During this stage, inert gas is introduced into the anti-deposition shield 234 of the drive unit 23 to maintain positive pressure protection, and the carrier 21 runs at a first preset speed to deposit an undercoat on the substrate surface.

[0059] S3. Establishing a differential pressure isolation environment: When the vehicle 21 enters the isolation module 30 in the straight section, the heating component 312 maintains the channel wall temperature at an anti-condensation temperature. Simultaneously, the high-vacuum pump unit 321 connected to the annular differential pumping tank 32 is activated, establishing a deep vacuum trapping zone in the middle of the flow-resistance channel 31; and the injection unit 33 is activated, injecting inert gas in the reverse direction into the flow-resistance channel 31 to form an aerodynamic barrier. Through the coupling effect of geometric flow restriction, differential pumping, and aerodynamic barrier, a stable pressure gradient is established between the chemical vapor deposition region 131 and the physical vapor deposition region 132.

[0060] S4. Optical Film Deposition: After the vacuum gauge 41 detects that the pressure is qualified and the interlock is released, the carrier 21 passes through the isolation module 30 and enters the physical vapor deposition zone 132. The carrier 21 runs at a second preset speed and deposits a multilayer optical film system on the substrate using magnetron sputtering.

[0061] S5. Sample Unloading and Functional Layer Deposition: After coating, the carrier 21 enters the sample unloading chamber 14. In this embodiment, the sample unloading chamber 14 is reused as a functional layer deposition chamber. After filling the sample unloading chamber 14 with hydrophobic material vapor, a hydrophobic layer is deposited on the substrate surface. Subsequently, the sample unloading chamber 14 is degassed, and finally the carrier 21 is sent to the loading and unloading area 11 to remove the substrate.

[0062] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A continuous annular vacuum coating system, characterized in that, It includes a production line body (10) extending in a closed loop and a transfer mechanism (20), the transfer mechanism (20) including a carrier (21) for carrying a substrate along the extension path of the production line body (10). The main body of the production line (10) sequentially defines a loading and unloading area (11), a sample inlet lock chamber (12), a process channel (13), and a sample outlet lock chamber (14) along its extension path. The sample inlet lock chamber (12) and the sample outlet lock chamber (14) are respectively connected to the two ends of the loading and unloading area (11), thereby forming a closed loop together with the process channel (13). The process channel (13) maintains a vacuum environment and includes a chemical vapor deposition zone (131), an isolation module (30) and a physical vapor deposition zone (132) arranged sequentially adjacent to each other along the movement direction of the carrier (21). The isolation module (30) includes: A flow-resistance channel (31) connecting the chemical vapor deposition region (131) and the physical vapor deposition region (132) has an inner wall profile configured to match the outer profile of the carrier (21), thereby defining a slit gap (311) between the carrier (21) and the inner wall of the flow-resistance channel (31), the slit gap (311) being configured to restrict the flow conduction of gas molecules by means of a geometric gap; An annular differential pumping groove (32) is recessed in the middle inner wall of the flow resistance channel (31) along the circumference. The annular differential pumping groove (32) is connected to an independent high vacuum pump group (321) to establish a vacuum isolation zone in the middle section of the flow resistance channel (31). The injection unit (33) is disposed at one end of the flow resistance channel (31) near the physical vapor deposition region (132) and is used to inject an inert gas with directional momentum into the flow resistance channel (31) to form an aerodynamic barrier in the flow resistance channel (31). The transmission mechanism (20) includes a closed-loop guide rail (22) laid along the bottom of the production line body (10) and a plurality of drive units (23) spaced apart along the extension direction of the closed-loop guide rail (22); wherein, the drive unit (23) located in the chemical vapor deposition zone (131) and the drive unit (23) located in the physical vapor deposition zone (132) are respectively electrically connected to an independent servo controller to drive the carrier (21) to run at different speeds in the chemical vapor deposition zone (131) and the physical vapor deposition zone (132); The drive unit (23) includes a servo motor (231) disposed outside the production line body (10), a sealing assembly (232) passing through the wall of the production line body (10), and a friction drive wheel (233) disposed inside the production line body (10) and frictionally engaging with the carrier (21). The drive shaft of the servo motor (231) passes through the sealing assembly (232) and is used to drive the friction drive wheel (233) to rotate. The drive unit (23) located in the chemical vapor deposition zone (131) also includes an anti-deposition shield (234), which covers the outside of the friction drive wheel (233), and the top of the anti-deposition shield (234) has a contact window (2341) for the rim of the friction drive wheel (233) to extend out. The anti-deposition shield (234) is connected to an inert gas source to maintain a local positive pressure inside the anti-deposition shield (234) that is higher than the background gas pressure of the chemical vapor deposition zone (131).

2. The continuous annular vacuum coating system according to claim 1, characterized in that, The injection unit (33) includes a plurality of flat nozzles (331) arranged circumferentially around the inner wall of the flow resistance channel (31). Each flat nozzle (331) has a narrow rectangular outlet. The injection axis of the flat nozzle (331) is inclined toward the chemical vapor deposition zone (131), so that the inert gas ejected by the flat nozzle (331) forms a sheet-like reverse blocking airflow pointing toward the chemical vapor deposition zone (131) to use gas momentum to suppress the diffusion of process gas from the chemical vapor deposition zone (131) to the physical vapor deposition zone (132).

3. The continuous annular vacuum coating system according to claim 1, characterized in that, The flow resistance channel (31) is provided with an independently temperature-controlled heating component (312). The heating component (312) is configured to maintain the inner wall temperature of the flow resistance channel (31) at a preset temperature. The preset temperature is higher than the liquefaction temperature of the precursor of the chemical vapor deposition reaction under the working gas pressure in the chemical vapor deposition zone (131) to prevent the precursor or by-product of the chemical vapor deposition reaction from condensing and accumulating in the flow resistance channel (31).

4. The continuous annular vacuum coating system according to claim 1, characterized in that, The main body of the production line (10) is arranged in a rectangular loop. The process channel (13) includes a straight process section and a corner connection section. The isolation module (30) is set in the straight process section and is located between the chemical vapor deposition area (131) and the physical vapor deposition area (132) to ensure that the carrier (21) passes through the flow resistance channel (31) in a straight motion state.

5. The continuous annular vacuum coating system according to claim 1, characterized in that, It also includes a control system (40) and a vacuum gauge (41) for measuring the air pressure in the flow resistance channel (31). The control system (40) is communicatively connected to the vacuum gauge (41) and the sputtering power supply of the physical vapor deposition region (132). The control system (40) is configured to: read the pressure feedback value of the vacuum gauge (41) in real time, and send a working enable signal to the sputtering power supply of the physical vapor deposition region (132) only when the pressure feedback value is lower than a preset pressure threshold; otherwise, the output of the sputtering power supply of the physical vapor deposition region (132) is forcibly cut off.

6. A coating method using the continuous annular vacuum coating system as described in any one of claims 1 to 5, characterized in that, Includes the following steps: S1. The substrate is loaded onto the carrier (21) in the loading and unloading area (11), and the carrier (21) is sent into the process channel (13) via the sample injection lock chamber (12). S2. Deposit an undercoat on the substrate surface within the chemical vapor deposition zone (131); S3. Drive the carrier (21) into the isolation module (30), use the high vacuum pump group (321) connected to the annular differential pumping groove (32) to pump air to establish a vacuum isolation zone in the middle of the flow resistance channel (31), and turn on the injection unit (33) to inject inert gas into the flow resistance channel (31) to form an aerodynamic barrier in the flow resistance channel (31), thereby establishing a differential pressure isolation environment between the chemical vapor deposition zone (131) and the physical vapor deposition zone (132); S4. Drive the carrier (21) through the isolation module (30) into the physical vapor deposition region (132) to deposit a multilayer optical film system on the substrate; S5. The carrier (21) is sent into the sample release chamber (14), and a surface hydrophobic layer chemical vapor deposition is performed on the substrate in the sample release chamber (14). Then, the sample release chamber (14) is degassed and the vacuum is released. Finally, the carrier (21) is sent out to the loading and unloading area (11) and the substrate on the carrier (21) is removed.

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