Dual-polarization dual-band common-caliber stealth antenna

Abstract

The invention provides a dual-polarization dual-band common-caliber stealth antenna which is formed by regularly stacking a band-pass wave-absorbing frequency-selecting integrated antenna, an air space and a patch antenna. The band-pass wave-absorbing frequency-selective integrated antenna radiates on the main polarization and selectively transmits electromagnetic waves of a required frequency band in the cross polarization direction; and the antenna has broadband stealth performance outside the working frequency band and the wave-transparent band of the antenna. The band-pass wave-absorbing frequency-selective integrated antenna covers the patch antenna, not only serves as an electromagnetic protection layer, but also serves as a partial reflection surface to work, and forms a Fabry-Perot-like cavity with the patch antenna, so that gain enhancement of the patch antenna is realized. The surface of the artificial magnetic conductor is loaded to the surface of the patch antenna, the reflection phase of the metal ground can be adjusted, and the overall profile is reduced. Based on the design mechanism of the band-pass wave-absorbing frequency selection structure, the patch antenna is integrated into the band-pass frequency selection structure, the combination of the spatial filtering characteristic and the radiation characteristic is realized, and the antenna is suitable for electromagnetic compatibility and protection of a multi-band and multi-polarization communication system.

Description

Technical Field

[0001] This invention belongs to the field of stealth antenna design, specifically relating to a dual-polarization, dual-band common-aperture stealth antenna. Background Technology

[0002] A bandpass absorbing frequency selective structure is a special metallic structure composed of periodically arranged elements. It absorbs incoming electromagnetic waves outside the passband, converting electromagnetic wave energy into heat; within the passband, it allows electromagnetic waves to pass through with low loss. Using a bandpass absorbing frequency selective structure as the electromagnetic shielding layer of an antenna is one method for achieving stealth antennas. However, as an external component, the bandpass absorbing frequency selective structure typically needs to be spaced at least a quarter wavelength from the antenna, sacrificing profile thickness to avoid problems such as antenna impedance mismatch and pattern distortion caused by near-field coupling. Furthermore, current stealth antenna designs based on bandpass absorbing frequency selective structures are mostly designed for single polarization and single frequency band, which is not conducive to meeting the demands of modern communications for multi-polarization and multi-frequency bands. Summary of the Invention

[0003] The purpose of this invention is to address the shortcomings of existing technologies by providing a dual-polarization, dual-band, common-aperture stealth antenna. This antenna is constructed by regularly stacking a bandpass-absorbing frequency-selective integrated antenna, an air gap, and a patch antenna. The proposed bandpass-absorbing frequency-selective integrated antenna radiates along its primary polarization and selectively transmits electromagnetic waves in the desired frequency band along the cross-polarization direction; it possesses broadband stealth performance outside the antenna's operating frequency band and transmission band. The bandpass-absorbing frequency-selective integrated antenna covers the patch antenna, acting as both an electromagnetic shielding layer and a partial reflective surface. Together with the bottom patch antenna, it forms a Fabry-Perot-like cavity, enhancing the gain of the patch antenna. Furthermore, an artificial magnetic conductor surface is loaded onto the patch antenna, adjusting the reflection phase of the metallic ground and further reducing the overall profile.

[0004] To achieve the above objectives, the technical solution of the present invention is: a dual-polarized dual-band common-aperture stealth antenna, comprising a bandpass absorbing frequency-selective integrated antenna, an air gap layer, and a patch antenna arranged sequentially; the air gap layer is located between the bandpass absorbing frequency-selective integrated antenna and the patch antenna; The bandpass absorbing frequency-selective integrated antenna includes a bandpass frequency-selective integrated antenna arranged parallel to the patch antenna, and a lossy structure array disposed on the surface of the bandpass frequency-selective integrated antenna away from the patch antenna. An orthogonal coordinate system is established with the plane containing the patch antenna as a reference, where the x and y axes lie within the plane of the patch antenna, and the z axis is perpendicular to the plane of the patch antenna. The lossy structure array is composed of several lossy structure units arranged in an array along the x and y axes in the same z-coordinate plane. Each lossy structure unit is composed of a first lossy structure and a second lossy structure orthogonally arranged along the x and y axes. The patch antenna includes a seventh dielectric substrate, an artificial magnetic conductor surface printed on the top surface of the seventh dielectric substrate, a third rectangular patch, and a first metal ground printed on the bottom surface of the seventh dielectric substrate; the top surface of the seventh dielectric substrate is the side surface of the seventh dielectric substrate closest to the bandpass absorbing frequency-selective integrated antenna; the third rectangular patch is located at the center of the top surface of the seventh dielectric substrate, and the artificial magnetic conductor surface includes a plurality of first square patches arrayed around the third rectangular patch; the first square patches are in a positional correspondence with the projection of the lossy structural unit in the xy plane.

[0005] Preferably, the first lossy structure includes a first dielectric substrate, a first lossy dipole and a first interdigital structure printed on the front side of the first dielectric substrate, and a first zigzag inductor structure and a first microstrip line printed on the back side of the first dielectric substrate. The first lossy dipole is a bent microstrip line, and a first radio frequency resistor is embedded on the first lossy dipole; The two ends of the first interdigitated structure and the two ends of the first zigzag inductor structure are electrically connected through a first metal via; the first zigzag inductor structure is located at the center of the first microstrip line. A second radio frequency resistor is embedded in each of the two sides of the first tortuous inductor structure in the first microstrip line.

[0006] Preferably, the second lossy structure includes a second dielectric substrate, a second lossy dipole and a second interdigital structure printed on the front side of the second dielectric substrate, and a second zigzag inductor structure and a second microstrip line printed on the back side of the second dielectric substrate. The second lossy dipole is a bent microstrip line, and a third radio frequency resistor is embedded on the second lossy dipole; The two ends of the second interdigitated structure and the two ends of the second zigzag inductor structure are electrically connected through a second metal via; the second zigzag inductor structure is located at the center of the second microstrip line; The second microstrip line contains a fourth radio frequency resistor embedded in each of the two sides of the second tortuous inductor structure.

[0007] Preferably, the bandpass frequency-selective integrated antenna includes a third dielectric substrate, a fourth dielectric substrate, a fifth dielectric substrate, and a sixth dielectric substrate, which are stacked sequentially and have metal structures printed on their surfaces, as detailed below: The third dielectric substrate has several first rectangular patches printed on the side surface near the lossy structure array, arranged in an array along the x and y axes, and the first rectangular patches are in positional correspondence with the projection of the lossy structure unit in the xy plane. The fourth dielectric substrate has a plurality of first rectangular metal slots and first circular metal slots printed on the side surface near the third dielectric substrate, arranged in an array along the x and y axes; the center position of the first rectangular metal slot overlaps with the projection of the center position of the first rectangular patch in the xy plane; The fifth dielectric substrate has a power supply network printed on the side surface close to the fourth dielectric substrate, and a plurality of second rectangular metal slots arranged in an array along the x and y axes are printed on the side surface of the fifth dielectric substrate away from the fourth dielectric substrate. The center position of the second rectangular metal slots overlaps with the projection of the center position of the first rectangular patch in the xy plane. The sixth dielectric substrate has a plurality of second rectangular patches arranged in an array along the x and y axes printed on the surface of the side away from the fifth dielectric substrate, and the center position of the second rectangular patch overlaps with the projection of the center position of the first rectangular patch in the xy plane. The first rectangular patch is electrically connected to the power supply network through a third metal via. The third metal via is located at the edge of the first rectangular patch and passes through the third dielectric substrate, the first circular metal gap, and the fourth dielectric substrate. The center of the third metal via and the center of the first circular metal gap overlap in the xy plane.

[0008] Preferably, the projection of the third metal via in the xy plane does not overlap with the projections of the first rectangular metal gap and the second rectangular metal gap in the xy plane.

[0009] Preferably, the first rectangular patch and the second rectangular patch are of the same size.

[0010] Preferably, the third metal via is located on the center line of the short side of the first rectangular patch.

[0011] Preferably, the power supply network is a multi-stage power divider network composed of multiple microstrip T-shaped power dividers; each power divider is connected in a "T" shape with a fourth microstrip line and a fifth microstrip line, wherein the fourth microstrip line is parallel to the x-axis direction and the fifth microstrip line is parallel to the y-axis direction. In the multi-level power distribution network: The input of the first-stage microstrip T-shaped power divider is connected to the rest of the multi-stage power divider network via the fifth microstrip line to achieve electrical connection with the signal source. The two output terminals of the first-stage microstrip T-shaped power divider are respectively connected to the third microstrip line through the fourth microstrip line. The third microstrip line and the third metal via are respectively set in a one-to-one correspondence and are electrically connected.

[0012] Preferably, the thickness of the air gap layer is set to one-quarter of the wavelength corresponding to the operating frequency of the patch antenna.

[0013] Preferably, all dielectric substrates use the same low dielectric constant substrate material, Rogers 5880.

[0014] Compared with the prior art, the present invention has the following beneficial effects: (1) Compared with most existing stealth antennas, the present invention has the advantages of dual polarization and dual frequency band operation, which is conducive to meeting the needs of modern communication for highly integrated systems; compared with existing common aperture antennas, the present invention has the advantages of broadband stealth and high isolation, and has broad application prospects in the field of national defense and military.

[0015] (2) This invention innovatively integrates the feed network into a classic second-order bandpass absorbing frequency selector to form a bandpass absorbing frequency selector integrated antenna, which simultaneously possesses radiation, selective transmission, and out-of-band absorption functions. This bandpass absorbing frequency selector integrated antenna itself has broadband out-of-band stealth performance and is also suitable for electromagnetic protection of antennas operating in cross-polarization directions, making it easy to realize a dual-polarization, dual-band common-aperture stealth antenna. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the dual-polarized dual-band common-aperture stealth antenna structure of the present invention; Figure 2 This is a schematic diagram of the bandpass absorbing frequency-selective integrated antenna structure of the present invention; Figure 3 This is a schematic diagram of the lossy structural unit of the present invention; Figure 4 This is a schematic diagram of the first lossy structure of the present invention; Figure 5 This is a schematic diagram of the second lossy structure of the present invention; Figure 6 This is a schematic diagram of the integrated antenna with passband selective according to the present invention; Figure 7 This is a schematic diagram of the top surface structure of the third dielectric substrate in the bandpass frequency-selective integrated antenna of the present invention; Figure 8 This is a schematic diagram of the top surface structure of the fourth dielectric substrate in the bandpass frequency-selective integrated antenna of the present invention; Figure 9 This is a schematic diagram of the top surface structure of the fifth dielectric substrate in the bandpass frequency-selective integrated antenna of the present invention; Figure 10 This is a schematic diagram of the bottom surface structure of the fifth dielectric substrate in the bandpass frequency-selective integrated antenna of the present invention; Figure 11 This is a schematic diagram of the bottom surface structure of the sixth dielectric substrate in the bandpass frequency-selective integrated antenna of the present invention; Figure 12 This is a schematic diagram of the patch antenna structure of the present invention; Figure 13 The simulation S-parameter diagrams of the bandpass absorbing frequency-selective integrated antenna and patch antenna of the present invention are shown. Figure 14 This is a simulation gain diagram of the patch antenna of the present invention; Figure 15 This is a simulation gain diagram of the bandpass absorbing frequency-selective integrated antenna of the present invention; Figure 16 The figure shows the RCS simulation results of the dual-polarized dual-band common-aperture stealth antenna of the present invention under normal incidence.

[0017] The diagram is labeled as follows: 1-Dual-polarized dual-band common-aperture stealth antenna, 2-Bandpass absorbing frequency-selective integrated antenna, 3-Air spacer layer, 4-Patch antenna, 21-Lossful structure array, 22-Bandpass frequency-selective integrated antenna, 211-Lossful structure element, 221-First lossy structure, 222-First dielectric substrate, 223-First lossy dipole, 224-First RF resistor, 225-First interdigital structure, 226-First metal via, 227-First zigzag inductor structure, 228-First microstrip line, 229-Second RF resistor, 231-Second lossy structure, 232-Second dielectric substrate, 233-Second lossy dipole, 234-Third RF resistor, 235-Second interdigital structure, 236-Second metal via, 237-First zigzag inductor structure, 2 38-Second microstrip line, 239-Fourth RF resistor, 241-Third dielectric substrate, 242-Fourth dielectric substrate, 243-Fifth dielectric substrate, 244-Sixth dielectric substrate, 251-First rectangular patch, 252-Third metal via, 253-First rectangular metal slot, 254-First circular metal slot, 261-First power divider, 262-Second power divider, 263-Third power divider, 264-Fourth power divider, 265-Fifth power divider, 266-Sixth power divider, 270-Third microstrip line, 271-Fourth microstrip line, 272-Fifth microstrip line, 280-Second rectangular metal slot, 281-Second rectangular patch, 41-Seventh dielectric substrate, 411-Third rectangular patch, 412-Artificial magnetic conductor surface, 413-First square patch. Detailed Implementation

[0018] The technical solution of the present invention will now be described in detail with reference to the accompanying drawings.

[0019] like Figure 1 As shown, the present invention proposes a dual-polarization dual-band common-aperture stealth antenna 1, which is composed of a bandpass absorbing frequency-selective integrated antenna 2, an air spacer layer 3, and a patch antenna 4 stacked in a regular manner. like Figure 2 , 3As shown, the bandpass absorbing frequency-selective integrated antenna 2 is composed of a lossy structure array 21 and a bandpass frequency-selective integrated antenna 22 stacked without gaps; the lossy structure array 21 is composed of several lossy structure units 211 arranged periodically along the x and y axes; the lossy structure unit 211 is composed of a first lossy structure 221 and a second lossy structure 231 arranged orthogonally; wherein, the orthogonal coordinate system is established with the plane where the patch antenna 4 is located as the reference, the x and y axes are located in the plane where the patch antenna 4 is located, and the z axis is perpendicular to the plane where the patch antenna 4 is located.

[0020] like Figure 4 As shown, the first lossy structure 221 includes a first dielectric substrate 222 and metal structures printed on the top and bottom surfaces of the first dielectric substrate 222. The metal structures include a first lossy dipole 223 and a first interdigitated structure 225 on the bottom surface, and a first zigzag inductor structure 227 and a first microstrip line 228 printed on the top surface of the first dielectric substrate 222. The first lossy dipole 223 is a zigzag microstrip line, with two first radio frequency resistors 224 embedded in the portion parallel to the y-axis. The two ends of the first interdigitated structure 225 and the two ends of the first zigzag inductor structure 227 are electrically connected through a first metal via 226. The first zigzag inductor structure 227 is located at the center of the first microstrip line 228. Two second radio frequency resistors 229 are embedded on both sides of the first zigzag inductor structure 227 within the first microstrip line 228.

[0021] like Figure 5 As shown, the second lossy structure 231 includes a second dielectric substrate 232 and metal structures printed on the top and bottom surfaces of the second dielectric substrate 232. The metal structures include a second lossy dipole 233 and a second interdigitated structure 235 on the bottom surface, and a second zigzag inductor structure 237 and a second microstrip line 238 printed on the top surface of the second dielectric substrate 232. The second lossy dipole is a zigzag microstrip line, with two third RF resistors 234 embedded in the portion parallel to the x-axis. The two ends of the second interdigitated structure 235 and the two ends of the second zigzag inductor structure 237 are electrically connected through a second metal via 236. The second zigzag inductor structure 237 is located at the center of the second microstrip line 238. In the second microstrip line 238, two fourth RF resistors 239 are embedded on both sides of the first zigzag inductor structure 237.

[0022] like Figure 6 As shown, the frequency-selective integrated antenna 22 is composed of a third dielectric substrate 241, a fourth dielectric substrate 242, a fifth dielectric substrate 243, a sixth dielectric substrate 244, and a metal structure printed on the substrate. like Figure 7As shown, the top surface of the third dielectric substrate 241 is printed with a plurality of first rectangular patches 251 periodically distributed along the x-axis and y-axis; the third metal via 252 is located at the edge of the first rectangular patch 251 and passes through the third dielectric substrate 241 and the fourth dielectric substrate 242.

[0023] like Figure 8 As shown, the top surface of the fourth dielectric substrate 242 is printed with a plurality of first rectangular metal slots 253 and first circular metal slots 254 periodically distributed along the x-axis and y-axis; the center position of the first rectangular metal slot 253 overlaps with the center position of the first rectangular patch 251 in the xy plane; the center position of the first circular metal slot 254 overlaps with the center position of the third metal via 252 in the xy plane; like Figure 9 As shown, a power supply network 260 is printed on the top surface of the fifth dielectric substrate 243; in this embodiment, the power supply network 260 is composed of a first power divider 261, a second power divider 262, a third power divider 263, a fourth power divider 264, a fifth power divider 265 and a sixth power divider 266; each power divider is composed of a fourth microstrip line 271 and a fifth microstrip line 272 connected in a "T" shape, wherein the fourth microstrip line 271 is in the shape of an "I" and the fifth microstrip line 272 is in the shape of a "|".

[0024] The input terminal of the first power divider 261 is connected to the fifth microstrip line 272, and the two output terminals of the first power divider 261 are respectively connected to the third microstrip line 270 through the fourth microstrip line 271. The third microstrip line 270 and the third metal via 252 are respectively provided in a one-to-one correspondence and are electrically connected. The input terminal of the second power divider 262 is connected to a fourth microstrip line 271; the two output terminals of the second power divider 262 are respectively connected to the fifth microstrip lines 272 of the input terminals of two adjacent first power dividers 261. The input terminal of the third power divider 263 is connected to the fifth microstrip line 272; the two output terminals of the third power divider 263 are respectively connected to the fourth microstrip lines 271 of the input terminals of the two adjacent second power dividers 262. The input terminal of the fourth power divider 264 is connected to the fourth microstrip line 271; the two output terminals of the fourth power divider 264 are respectively connected to the fifth microstrip lines 272 of the input terminals of the two adjacent third power dividers 263. The input terminal of the fifth power divider 265 is connected to the fifth microstrip line 272; the two output terminals of the fifth power divider 265 are respectively connected to the fourth microstrip lines 271 of the input terminals of the two adjacent fourth power dividers 264. The input terminal of the sixth power divider 266 is connected to the fourth microstrip line 271 to connect to the signal source; the two output terminals of the sixth power divider 266 are respectively connected to the fifth microstrip lines 272 of the input terminals of the two adjacent fifth power dividers 265.

[0025] like Figure 10 As shown, the bottom surface of the fifth dielectric substrate 243 is printed with a plurality of second rectangular metal slots 280 that are periodically distributed along the x-axis and y-axis. The center position of the second rectangular metal slots 280 overlaps with the center position of the first rectangular patch 251 and the first rectangular metal slot 253 in the xy plane. like Figure 11 As shown, the bottom surface of the sixth dielectric substrate 244 is printed with a plurality of second rectangular patches 281 periodically distributed along the x-axis and y-axis. The center position of the second rectangular patch 281 overlaps with the center position of the first rectangular patch 251, the first rectangular metal gap 253 and the second rectangular metal gap 280 in the xy plane.

[0026] like Figure 12 As shown, the patch antenna 4 includes a seventh dielectric substrate 41, a third rectangular patch 411 printed on the top surface of the seventh dielectric substrate 41, an artificial magnetic conductor surface 412, and a first metal ground printed on the bottom surface of the seventh dielectric substrate 41; the third rectangular patch 411 is located at the center of the seventh dielectric substrate 41; the artificial magnetic conductor surface 412 is composed of a plurality of first square patches 413 arranged periodically along the x and y axes, and the first square patches 413 are not placed in the areas that conflict with the third rectangular patch 411.

[0027] In the structure, t 1 represents the thickness of the first dielectric substrate 222 and the second dielectric substrate 232. t 2 represents the thickness of the third dielectric substrate 241 and the sixth dielectric substrate 244. t The seventh substrate 41; p The period size of the damaged structural unit 211, the first rectangular patch 251, the first rectangular metal gap 253, the second rectangular metal gap 280, the second rectangular patch 281, and the first square patch 413; W s1 The width of the first lossy dipole 223, W g1 The gap width of the first interdigital structure 225. W g2 The microstrip line width is 225 for the first interdigital structure. W s2 The width of the first microstrip line 228, R L1 The microstrip line width of the first zigzag inductor structure 237 Rw1 The gap width of the first tortuous inductor structure 237, R 1 represents the resistance value of the first RF resistor 224. R 2 represents the resistance value of the second RF resistor 229; W s3 The width of the second lossy dipole 233, W g3 The gap width of the second interdigital structure 235 W g4 The microstrip line width is 235 for the second interdigitated structure. W s4 The width of the second microstrip line 238, R L1 The microstrip line width is for the second tortuous inductor structure 237. R w1 The gap width of the second tortuous inductor structure 237, R 3 represents the resistance value of the third RF resistor, 224. R 4 represents the resistance value of the fourth RF resistor, 239. a The lengths of the first rectangular patch 251 and the second rectangular patch 281 are given. b The widths of the first rectangular patch 251 and the second rectangular patch 281; P L The length of the third rectangular patch 411 P w Pa is the width of the third rectangular patch 411; Pa is the side length of the first square patch 413.

[0028] Specific working principle: Under normal incidence of vertically and horizontally polarized waves, the excitation field on the first rectangular patch is orthogonal, allowing for independent functions to be designed without interference in the two orthogonal polarization directions. Therefore, after powering the first rectangular patch, the top patch can be transformed into a radiator. Simultaneously, in the cross-polarization direction, the first rectangular patch, the first rectangular metal slot surface, the second rectangular metal slot surface, and the second rectangular patch constitute a bandpass frequency selector, selectively transmitting electromagnetic waves.

[0029] A bandpass frequency-selective integrated antenna reflects electromagnetic waves outside its operating frequency band in the main polarization direction and outside its transmission band in the cross-polarization direction, and can be considered as an ideal metallic surface. Furthermore, the lossy structure, through a special metallic construction, allows electromagnetic waves to pass through without loss within the transmission band, while absorbing electromagnetic waves reflected by the bandpass frequency-selective integrated antenna outside the transmission band. Therefore, the bandpass-absorbing frequency-selective integrated antenna array integrates radiation, selective transmission, and out-of-band absorption functions.

[0030] For any antenna operating in a cross-polarization direction, a bandpass absorbing frequency-selective integrated antenna array can serve as its electromagnetic shielding layer. For the patch antenna of this invention, the bandpass absorbing frequency-selective integrated antenna array also acts as a partial reflective surface, forming a Fabry-Perot-like cavity with the bottom antenna. When the thickness of the air gap satisfies the interference condition, the gain of the patch antenna can be improved. Furthermore, based on the artificial magnetic conductor surface, the reflection phase of the ground plane can be adjusted, allowing for a smaller air gap thickness to satisfy the interference condition, further reducing the overall cross-sectional thickness.

[0031] Figure 13 This is a simulation S-parameter diagram of the dual-polarized, dual-band, common-aperture stealth antenna of this invention. In this invention, the 10dB impedance bandwidth of the patch antenna is 7.4GHz-7.7GHz; the 10dB impedance bandwidth of the bandpass-absorbing frequency-selective integrated antenna is 9GHz-10.85GHz. Furthermore, across the entire frequency band, the isolation between the two antennas (|S...)... 21 |) greater than 40dB.

[0032] Figure 14 The image shows the simulated gain of the patch antenna in this invention. The antenna reaches its peak gain of 10.71 dBi at 7.5 GHz.

[0033] Figure 15 The image shows the simulated gain of the bandpass absorbing frequency-selective integrated antenna in this invention. The antenna reaches its peak gain of 20 dBi at 10 GHz.

[0034] Figure 16 The simulated RCS diagram of the dual-polarization dual-band common-aperture stealth antenna of the present invention under normal incidence is shown. Under electromagnetic waves with normal incidence in the main polarization direction of the antenna, the 10 dB RCS reduction band is 3-6.7 GHz and 8.93-13.2 GHz. Under cross-polarized electromagnetic waves, the RCS reduction band is 4-19.5 GHz.

[0035] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, without departing from the principle of the present invention, the material type / properties / size can be changed, or the structure / size / number of layers of the metamaterial absorber can be altered, as well as other improvements and modifications. These improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A dual-polarization, dual-band, common-aperture stealth antenna, characterized in that, It includes a bandpass-absorbing frequency-selective integrated antenna, an air gap layer, and a patch antenna arranged sequentially; the air gap layer is located between the bandpass-absorbing frequency-selective integrated antenna and the patch antenna. The bandpass absorbing frequency-selective integrated antenna includes a bandpass frequency-selective integrated antenna arranged parallel to the patch antenna, and a lossy structure array disposed on the surface of the bandpass frequency-selective integrated antenna away from the patch antenna. An orthogonal coordinate system is established with the plane containing the patch antenna as a reference, where the x and y axes lie within the plane of the patch antenna, and the z axis is perpendicular to the plane of the patch antenna. The lossy structure array is composed of several lossy structure units arranged in an array along the x and y axes in the same z-coordinate plane. Each lossy structure unit is composed of a first lossy structure and a second lossy structure orthogonally arranged along the x and y axes. The patch antenna includes a seventh dielectric substrate, an artificial magnetic conductor surface printed on the top surface of the seventh dielectric substrate, a third rectangular patch, and a first metal ground printed on the bottom surface of the seventh dielectric substrate; The top surface of the seventh dielectric substrate is the side surface of the seventh dielectric substrate near the bandpass absorbing frequency-selective integrated antenna; the third rectangular patch is located at the center of the top surface of the seventh dielectric substrate; the artificial magnetic conductor surface includes a plurality of first square patches arrayed around the third rectangular patch; the first square patches are in a positional correspondence with the projection of the lossy structural unit in the xy plane.

2. The dual-polarization dual-band common-aperture stealth antenna according to claim 1, characterized in that, The first lossy structure includes a first dielectric substrate, a first lossy dipole and a first interdigital structure printed on the front side of the first dielectric substrate, and a first zigzag inductor structure and a first microstrip line printed on the back side of the first dielectric substrate. The first lossy dipole is a bent microstrip line, and a first radio frequency resistor is embedded on the first lossy dipole; The two ends of the first interdigitated structure and the two ends of the first zigzag inductor structure are electrically connected through a first metal via; the first zigzag inductor structure is located at the center of the first microstrip line. A second radio frequency resistor is embedded in each of the two sides of the first tortuous inductor structure in the first microstrip line.

3. The dual-polarization, dual-band, common-aperture stealth antenna according to claim 1, characterized in that, The second lossy structure includes a second dielectric substrate, a second lossy dipole and a second interdigital structure printed on the front side of the second dielectric substrate, and a second zigzag inductor structure and a second microstrip line printed on the back side of the second dielectric substrate. The second lossy dipole is a bent microstrip line, and a third radio frequency resistor is embedded on the second lossy dipole; The two ends of the second interdigitated structure and the two ends of the second zigzag inductor structure are electrically connected through a second metal via; the second zigzag inductor structure is located at the center of the second microstrip line; The second microstrip line contains a fourth radio frequency resistor embedded in each of the two sides of the second tortuous inductor structure.

4. The dual-polarization dual-band common-aperture stealth antenna according to claim 1, characterized in that, The aforementioned frequency-selective integrated antenna comprises a third dielectric substrate, a fourth dielectric substrate, a fifth dielectric substrate, and a sixth dielectric substrate, which are stacked sequentially and have metal structures printed on their surfaces, as detailed below: The third dielectric substrate has several first rectangular patches printed on the side surface near the lossy structure array, arranged in an array along the x and y axes, and the first rectangular patches are in positional correspondence with the projection of the lossy structure unit in the xy plane. The fourth dielectric substrate has a plurality of first rectangular metal slots and first circular metal slots printed on the side surface near the third dielectric substrate, arranged in an array along the x and y axes; the center position of the first rectangular metal slot overlaps with the projection of the center position of the first rectangular patch in the xy plane; The fifth dielectric substrate has a power supply network printed on the side surface close to the fourth dielectric substrate, and a plurality of second rectangular metal slots arranged in an array along the x and y axes are printed on the side surface of the fifth dielectric substrate away from the fourth dielectric substrate. The center position of the second rectangular metal slots overlaps with the projection of the center position of the first rectangular patch in the xy plane. The sixth dielectric substrate has a plurality of second rectangular patches arranged in an array along the x and y axes printed on the surface of the side away from the fifth dielectric substrate, and the center position of the second rectangular patch overlaps with the projection of the center position of the first rectangular patch in the xy plane. The first rectangular patch is electrically connected to the power supply network through a third metal via. The third metal via is located at the edge of the first rectangular patch and passes through the third dielectric substrate, the first circular metal gap, and the fourth dielectric substrate. The center of the third metal via and the center of the first circular metal gap overlap in the xy plane.

5. The dual-polarization dual-band common-aperture stealth antenna according to claim 4, characterized in that, The projection of the third metal via in the xy plane does not overlap with the projections of the first rectangular metal gap and the second rectangular metal gap in the xy plane.

6. The dual-polarization dual-band common-aperture stealth antenna according to claim 4, characterized in that, The first rectangular patch and the second rectangular patch are the same size.

7. The dual-polarization dual-band common-aperture stealth antenna according to claim 4, characterized in that, The third metal via is located on the center line of the short side of the first rectangular patch.

8. The dual-polarization dual-band common-aperture stealth antenna according to claim 4, characterized in that, The power distribution network is a multi-stage power divider network composed of multiple microstrip T-shaped power dividers; each power divider is connected in a "T" shape with a fourth microstrip line and a fifth microstrip line, the fourth microstrip line being parallel to the x-axis direction and the fifth microstrip line being parallel to the y-axis direction. In the multi-level power distribution network: The input of the first-stage microstrip T-shaped power divider is connected to the rest of the multi-stage power divider network via the fifth microstrip line to achieve electrical connection with the signal source. The two output terminals of the first-stage microstrip T-shaped power divider are respectively connected to the third microstrip line through the fourth microstrip line. The third microstrip line and the third metal via are respectively set in a one-to-one correspondence and are electrically connected.

9. The dual-polarization, dual-band common-aperture stealth antenna according to claim 1, characterized in that, The thickness of the air gap layer is set to one-quarter of the wavelength corresponding to the operating frequency of the patch antenna.

10. The dual-polarization dual-band common-aperture stealth antenna according to any one of claims 1-9, characterized in that, All dielectric substrates use the same low dielectric constant substrate material, Rogers 5880.

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