A temperature compensation method based on a radio frequency transceiver circuit in a wide temperature environment

Abstract

This invention relates to the field of aviation communication system technology and discloses a temperature compensation method for radio frequency transceiver circuits under wide temperature conditions. The method includes estimating the maximum gain change caused by wide temperature variations in the transmit / receive channel amplifier; obtaining the resistance value of a second resistor under wide temperature conditions; connecting a fixed resistor in parallel across the thermistor in the attenuator to obtain a temperature-compensated attenuator circuit, and optimizing the temperature-compensated attenuator circuit; performing engineering testing and iterative optimization of the temperature-compensated attenuator circuit until the receive gain target is met; and considering the insertion loss of each stage of the components to ensure the amplifier operates at a preset gain, thereby ensuring the signal operates in the linear region and completing the temperature compensation of the radio frequency transceiver circuit. This invention features a simple structure, high reliability, small size, low power consumption, low cost, small test data volume, simple and easy-to-operate control process, and easy integration. It is suitable not only for ordinary airborne platform communication but also for miniaturized, low-power, high-consumption UAVs or missile-borne platform communication.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of aviation communication systems, in particular to a temperature compensation method based on a radio frequency transceiver circuit in a wide temperature environment. BACKGROUND

[0002] In the field of airborne communication, especially in the communication scenario of unmanned aerial vehicles, the miniaturization and low power consumption of communication equipment are increasingly required, and the equipment also needs to adapt to various harsh working environments. With the advancement of system operations, a large number of consumable unmanned aerial vehicle swarms are deployed on the battlefield, further putting forward new requirements for the narrowband communication capability and low-cost design of devices with small data volume. Therefore, miniaturization, low power consumption and low cost have become the main direction of the design of airborne communication equipment, and in addition to these requirements, how to adapt to wide temperature changes is a key problem that must be solved to ensure stable operation of the equipment.

[0003] Airborne aircraft communication equipment faces great environmental temperature fluctuations in high altitudes, with temperature differences of more than 120°C. Such large temperature differences can seriously affect the performance of various devices in the radio frequency transceiver circuit: in terms of active transistors, gain, threshold voltage / pinch-off voltage, output power and efficiency, noise figure changes will occur, and static operating point deviation and linearity degradation will also occur; in terms of passive devices, the values of resistors, capacitors and inductors will change with temperature, and the resonant frequency of resonators / filters will also drift due to changes in resistor, capacitor and inductor values.

[0004] Affected by these temperature-sensitive devices, the transceiver in a wide temperature environment often has problems such as frequency drift, gain fluctuation, impedance mismatch, noise figure degradation, and output power and efficiency decline. To ensure that the equipment can still work stably in such a large temperature difference range, the temperature compensation circuit plays a key role, which mainly solves the problem of large output power fluctuation caused by gain change of the amplifier in a wide temperature environment, ensures that the amplifier in the transceiver path works in the linear region, and thus improves the signal linearity, reduces the harmonic and spurious components caused by nonlinearity, and ensures the harmonic and spurious suppression capability of the transmission path. Therefore, the present application proposes a temperature compensation method based on a radio frequency transceiver circuit in a wide temperature environment. SUMMARY

[0005] To solve the problems in the related art, the present application proposes a temperature compensation method based on a radio frequency transceiver circuit in a wide temperature environment to overcome the above technical problems existing in the prior art.

[0006] To this end, the specific technical solutions adopted by the present application are as follows:

[0007] A temperature compensation method based on a radio frequency transceiver circuit in a wide temperature environment, comprising the following steps:

[0008] S1. Perform signal simulation on the transceiver channel according to the transceiver specifications to ensure that the channel gain meets the preset specifications, determine the number of amplifier stages in the transceiver channel, and estimate the maximum gain change ΔG caused by the wide temperature range of the transceiver channel amplifier based on the gain curves of various selected amplifiers.

[0009] S2. Select a temperature-compensated attenuator with a room temperature attenuation of 4dB. Based on the attenuator calculation model, calculate and analyze the factory test data of the temperature-compensated attenuator under a wide temperature environment, obtain the maximum attenuation change ΔATT0 of the temperature-compensated attenuator under a wide temperature condition, and obtain the resistance value of the second resistor under a wide temperature condition.

[0010] S3. Based on the analysis results of the parallel resistance characteristics and attenuation characteristics, a resistor with a preset fixed resistance value is connected in parallel across the thermistor in the temperature compensation attenuator to obtain the optimized circuit of the temperature compensation attenuator. The attenuation change value corresponding to different attenuation levels under wide temperature conditions is calculated, and the maximum attenuation change ΔATT1 under different levels is obtained.

[0011] S4. Based on the maximum gain change ΔG, preset the number of temperature-compensated attenuator stages, select the attenuation level of the temperature-compensated attenuator optimization circuit, and obtain the maximum attenuation change ΔATT after the cascaded temperature-compensated attenuator optimization circuit under wide temperature conditions.

[0012] S5. Determine the relationship between |ΔG-ΔATT| and the dynamic range. If it is greater than the dynamic range, adjust the attenuation setting or the number of stages of the temperature-compensated attenuator. If it is less than or equal to the dynamic range, it is determined that the design requirements are met.

[0013] S6. Based on the gain or insertion loss of each stage of the RF transceiver circuit, rationally arrange the position of the temperature-compensated attenuator to ensure that the signal operates in the linear region. By optimizing the parallel resistance value of the temperature-compensated attenuator, engineering testing and iteration are carried out until the preset performance requirements are met.

[0014] Furthermore, the step of performing signal simulation on the transceiver channel according to the transceiver specifications to ensure that the channel gain meets the preset specifications, determining the number of amplifier stages in the transceiver channel, and estimating the maximum gain change ΔG caused by the wide temperature range of the transceiver channel amplifier based on the gain curves of various selected amplifiers includes the following steps:

[0015] S11. Perform signal simulation on the transceiver channel according to the transceiver gain requirements, select the amplifier type, and design the number of amplifier stages in the transceiver channel;

[0016] S12. Based on the gain curve of the selected amplifier, obtain the gain variation range under wide temperature conditions;

[0017] S13. Based on the number of amplifier stages selected in the path, estimate the maximum gain change ΔG of the amplifier due to temperature changes.

[0018] Furthermore, based on the analysis results of the parallel resistance characteristics and attenuation characteristics, a resistor with a preset fixed resistance value is connected in parallel across the thermistor in the temperature-compensated attenuator to obtain the optimized circuit of the temperature-compensated attenuator. The calculation of the attenuation change value corresponding to different attenuation levels under wide temperature conditions and the acquisition of the maximum attenuation change ΔATT1 under different levels include the following steps:

[0019] S31. Based on the attenuation characteristic analysis results, and combined with the parallel resistance characteristic, a resistor with a fixed resistance value is connected in parallel across the thermistor in the attenuator to obtain the optimized circuit of the temperature-compensated attenuator.

[0020] S32. Calculate the fixed resistance value connected in parallel across the thermistor in the temperature-compensated attenuator optimization circuit using different attenuation levels at room temperature; calculate the optimized attenuation value of the temperature-compensated attenuator under wide temperature range using the fixed resistance value connected in parallel at this attenuation level, and obtain the maximum attenuation change ΔATT1 under different levels.

[0021] Furthermore, the step of calculating the fixed resistance value connected in parallel across the thermistor in the temperature-compensated attenuator optimization circuit using different attenuation levels at room temperature; and calculating the optimized attenuation value of the temperature-compensated attenuator over a wide temperature range using the fixed resistance value connected in parallel at different attenuation levels, and obtaining the maximum attenuation change ΔATT1 at different levels, includes the following steps:

[0022] S321. Based on the selected 4dB π-type temperature-compensated attenuator, determine the first resistor. R 1 and the third resistor R The resistance value of 3 is calculated based on the factory test data of the attenuation value of the temperature-compensated attenuator over a wide temperature range, and the second resistance is also calculated. R 2. Resistance values ​​at different temperatures, wherein the second resistor R 2 is a thermistor R 2;

[0023] S322. At room temperature, calculate the parallel resistance value in the temperature-compensated attenuator optimization circuit based on the target attenuation level. R / / R 2. Calculate the fixed resistor to be connected in parallel, based on the thermistor value at room temperature and the formula for parallel resistor connection. R The resistance value;

[0024] S323, Based on fixed resistor R Determine the resistance value of the fixed resistor over a wide temperature range. R With thermistor R 2. Resistance value after parallel connection R / / R 2;

[0025] S324, Based on the fixed resistor R With thermistor R 2. Resistance value after parallel connectionR / / R 2. Determine the attenuation amount over a wide temperature range to obtain the maximum attenuation change at the target attenuation level;

[0026] S325. Calculate the different fixed resistors according to different attenuation levels. R The resistance value was determined, and the attenuation under a wide temperature range was determined to obtain the maximum attenuation change ΔATT1 under different ranges.

[0027] S326. Based on the maximum attenuation change of different attenuation levels, select an appropriate attenuation level so that the attenuation change after cascading is close to the gain change of the cascaded amplifiers in the channel, ensuring that the channel gain index fluctuates within the allowable range, and completing the optimization of the temperature-compensated attenuator circuit.

[0028] Furthermore, when the actual resistance value is not equal to the target resistance value of the fixed resistor, a suitable resistor is selected according to the standard resistor value table, and the resistance value is made equal to or close to the target resistance value of the fixed resistor by connecting the resistors in series and parallel.

[0029] Furthermore, the step of presetting the number of temperature-compensated attenuator stages based on the maximum gain change ΔG, selecting the attenuation level of the temperature-compensated attenuator optimization circuit, and obtaining the maximum attenuation change ΔATT after cascading the temperature-compensated attenuator optimization circuit under wide temperature conditions includes the following steps:

[0030] S41. Based on the cascaded amplifiers in the path, estimate the maximum gain change ΔG under a wide temperature range, and preset the number of stages of the temperature-compensated attenuator.

[0031] S42. Select a certain attenuation level after the temperature-compensated attenuator is optimized, and obtain the maximum attenuation change ΔATT after the temperature-compensated attenuator is cascaded under a wide temperature range.

[0032] Furthermore, the determination of the relationship between |ΔG-ΔATT| and the dynamic range involves the following steps: if |ΔG-ΔATT| is greater than the dynamic range, the attenuation setting or the number of stages in the temperature-compensated attenuator is adjusted; if |ΔG-ΔATT| is less than or equal to the dynamic range, the design requirements are met.

[0033] S51. When |ΔG-ΔATT|≤dynamic range, proceed directly to step S6; when |ΔG-ΔATT|>dynamic range, reduce the attenuation level and then make a judgment. If the dynamic range condition is met, proceed directly to step S6.

[0034] S52. If the dynamic range condition is still not met after adjusting the gear, add a temperature compensation attenuator in the path, reselect the attenuation gear, and continue until |ΔG-ΔATT|≤dynamic range before proceeding to step S6.

[0035] Furthermore, the step of rationally positioning the temperature-compensated attenuator based on the gain or insertion loss of each stage of the RF transceiver circuit to ensure the signal operates in the linear region, and optimizing the parallel resistance value of the temperature-compensated attenuator to achieve engineering testing and iteration until the preset performance requirements are met, includes the following steps:

[0036] S61. Based on the gain or insertion loss of each stage of the RF transceiver circuit, perform simulation analysis on the transmit / receive channel signal, and reasonably arrange the position of the temperature compensation attenuator to ensure that the signal operates in the linear region.

[0037] S62. Optimize the parallel resistance value of the temperature compensation attenuator, and carry out engineering testing and iteration until the preset target requirements are met.

[0038] Furthermore, optimizing the parallel resistance value of the temperature-compensated attenuator, and implementing engineering testing and iteration until the preset performance requirements are met, includes the following steps:

[0039] S621. After processing into equipment, without optimizing the temperature compensation attenuator circuit, the equipment is tested at room temperature and high and low temperatures to obtain the measured channel gain data and form an initial record.

[0040] S622. After optimizing the temperature compensation attenuation circuit according to the design level, the equipment is tested at room temperature and high and low temperatures to obtain the measured data of the channel gain after the design optimization, and to determine whether the gain meets the preset index requirements.

[0041] S623. If the requirements are met, the test ends; if the requirements are not met, the parallel resistor of the temperature compensation attenuation circuit is adjusted, and the test and optimization operation is repeated until the gain of the path meets the preset requirements.

[0042] Furthermore, the repeated execution of testing and optimization operations until the gain metric of the pathway meets the preset metric requirements includes:

[0043] Based on the temperature drift inconsistency between the temperature-compensated attenuator and the amplifier gain, one or more rounds of room temperature and high / low temperature tests are conducted. The gain values ​​of each stage of the amplifier are adjusted according to the test data, and the fixed resistors connected in parallel across the temperature-compensated attenuator are finely adjusted until the gain index of the receiving path meets the receiving gain index requirements.

[0044] Furthermore, the receiving path consists of a 6-stage amplifier, a 3-stage temperature-compensated attenuation circuit, a 2-stage frequency converter, and a multi-stage filter. The temperature-compensated attenuation circuit is located at the front end of the amplifier. Utilizing the complementary characteristics of the temperature-compensated attenuator and the amplifier gain, it dynamically adjusts the local signal amplitude, ensuring that each stage of the amplifier in the path operates in the linear region, ensuring a clean signal spectrum, effectively suppressing harmonic noise in the receiving channel, improving the signal-to-noise ratio of the receiving channel, and ensuring communication quality.

[0045] Compared with the prior art, the present invention provides a temperature compensation method for radio frequency transceiver circuits under wide temperature environments, which has the following beneficial effects:

[0046] (1) This invention utilizes the complementary phenomenon between the negative temperature characteristics of the thermistor material and the nonlinear trend generated by active devices in the transceiver path. Based on theoretical analysis of the circuit, the temperature-compensated attenuator circuit is optimized to reduce the temperature sensitivity of the temperature-compensated attenuator, making it possible to use it as a temperature compensation circuit in narrowband transceivers in harsh temperature environments. A clever design idea is proposed to reduce the temperature sensitivity of the thermistor material. When used in the transceiver path, it can effectively reduce the large signal fluctuations caused by temperature changes and ensure that the device can exhibit stable communication performance in harsh temperature environments. This method uses only two types of surface-mount passive devices: temperature attenuators and resistors. It has a simple structure, high reliability, small size, low power consumption, low cost, small test data volume, simple and easy-to-operate control process, and is easy to integrate. It is not only suitable for ordinary airborne platform communication, but also for miniaturized, low-power, high-consumption UAV platform communication.

[0047] (2) This invention utilizes the characteristic that the thermistor maintains a stable resistance value at different temperatures and the resistance value increases as the temperature decreases. The thermistor is placed in a π-type attenuator to form a temperature-compensated attenuator. According to the characteristics of the π-type attenuator, the attenuation value of the temperature-compensated attenuator increases as the temperature decreases. This characteristic is complementary to the nonlinear trend generated by the device in the active RF circuit. By reasonably designing the temperature-compensated attenuator, temperature compensation of the RF performance of the device can be achieved in a wide temperature environment.

[0048] (3) This invention can avoid selecting active devices to avoid temperature compensation through program-controlled digital attenuators. After optimizing the design of the temperature compensation attenuator, it becomes possible to achieve temperature compensation in a wide temperature environment for narrowband communication or point frequency communication. Moreover, the circuit is simple, the cost is low, and it meets the requirements of airborne equipment for miniaturization and low power consumption.

[0049] (4) This invention optimizes the design of the temperature-compensated attenuator circuit, selects an appropriate attenuation level, and rationally arranges the temperature-compensated attenuator circuit at different positions in the transmit and receive paths. This takes into account both the amplifier operating in the linear region of the channel and the temperature drift inconsistency between the temperature-compensated attenuator and the channel gain. Through multiple rounds of high and low temperature tests, the resistance in the optimized temperature-compensated attenuator circuit is adjusted to a suitable value. This method can be applied alone to narrowband communication or point-frequency communication circuits, or it can be used as a supplement to the temperature-compensated circuit of a digitally controlled attenuator. Attached Figure Description

[0050] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0051] Figure 1 This is a simulation diagram of the receiving path signal in a temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to an embodiment of the present invention.

[0052] Figure 2 This is a curve showing the relationship between the gain of a certain type of low-noise amplifier and temperature in a temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to an embodiment of the present invention.

[0053] Figure 3 This is a curve showing the gain versus temperature relationship of a certain type of RF gain amplifier in a temperature compensation method for RF transceiver circuits under a wide temperature environment according to an embodiment of the present invention.

[0054] Figure 4 This is a structural diagram of a π-type attenuator in a temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to an embodiment of the present invention;

[0055] Figure 5 This is a cross-linking diagram of the internal resistance of a certain type of 4dB temperature compensation attenuator in a temperature compensation method for RF transceiver circuits under wide temperature conditions according to an embodiment of the present invention.

[0056] Figure 6 This is a temperature-attenuation curve relationship diagram of a certain type of 4dB temperature-compensated attenuator in a temperature compensation method for RF transceiver circuits under wide temperature environment according to an embodiment of the present invention.

[0057] Figure 7 This is a circuit diagram of an optimized temperature compensation attenuator in a temperature compensation method for RF transceiver circuits under wide temperature conditions according to an embodiment of the present invention.

[0058] Figure 8 This is a flowchart of the temperature compensation attenuator circuit optimization calculation process in a temperature compensation method for RF transceiver circuits under wide temperature conditions according to an embodiment of the present invention.

[0059] Figure 9 This is a temperature curve diagram corresponding to different attenuation levels of a certain type of 4dB temperature compensation attenuation circuit after optimization, in a temperature compensation method for RF transceiver circuits under wide temperature environment according to an embodiment of the present invention.

[0060] Figure 10 This is a flowchart illustrating the engineering implementation of a temperature compensation circuit in a temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment, according to an embodiment of the present invention.

[0061] Figure 11 This is an overall flowchart of a temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to an embodiment of the present invention; Detailed Implementation

[0062] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0063] According to an embodiment of the present invention, a temperature compensation method based on a radio frequency transceiver circuit under a wide temperature environment is provided.

[0064] The present invention will now be further described in conjunction with the accompanying drawings and specific embodiments, such as... Figures 1-11 As shown, according to an embodiment of the present invention, a temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment is provided, comprising the following steps:

[0065] S1. Perform signal simulation on the transceiver channel according to the transceiver specifications to ensure that the channel gain meets the preset specifications, determine the number of amplifier stages in the transceiver channel, and estimate the maximum gain change ΔG caused by the wide temperature range of the transceiver channel amplifier based on the gain curves of various selected amplifiers.

[0066] The process of performing signal simulation on the transceiver channel according to the transceiver specifications to ensure that the channel gain meets the preset requirements, determining the number of amplifier stages in the transceiver channel, and estimating the maximum gain change ΔG caused by the wide temperature range of the transceiver channel amplifier based on the gain curves of various selected amplifiers includes the following steps:

[0067] S11. Based on the transceiver gain requirements, perform signal simulation on the transmit / receive channel, select the amplifier type, and design the number of amplifier stages in the transmit / receive channel;

[0068] Specifically, such as Figure 1 As shown, in this embodiment, taking the simulation of the receiving channel signal as an example, the channel gain requirement is 62dB±2dB. Considering the arrangement order of amplifiers, filters, mixers, and attenuators in the receiving channel, as well as the gain or insertion loss parameters of each stage of the devices, the layout of each stage of the receiving path and the link gain budget are calculated. This ensures that the simulation results show a channel gain of 62.35dB under a small signal (-100dBm) input, and the channel gain simulation results are within the required fluctuation range. Two types of amplifiers with different gain and linearity requirements are selected based on the signal amplitude distribution in the path, and the receiving channel is designed as a cascaded 6-stage amplifier.

[0069] S12. Based on the gain curve of the selected amplifier, obtain the gain variation range under wide temperature conditions;

[0070] Specifically, such as Figure 2 andFigure 3 As shown, in this embodiment, based on the gain-temperature relationship curves of the two selected amplifier types, within the frequency band of 100MHz to 400MHz at a temperature of -40℃ to +85℃, Figure 2 The gain of the amplifier changes by less than 2dB due to temperature. Figure 3 The gain of the amplifier changes by 0.5 dB due to temperature, and under the same conditions, the lower the amplifier temperature, the greater the gain.

[0071] S13. Based on the number of amplifier stages selected in the path, estimate the maximum gain change ΔG of the amplifier due to temperature changes.

[0072] Specifically, such as Figure 1 As shown, in this embodiment, a 6-stage cascaded amplifier is designed in the path, of which 2 stages are... Figure 2 Amplifier type, 4 stages Figure 3 The amplifier type is such that, after cascading 6 amplifiers, the estimated maximum gain change due to temperature variation is ΔG≤6dB. If no temperature compensation is performed on the path, the fluctuation range of the amplifier due to temperature variation has significantly exceeded the specification requirements.

[0073] S2. Select a π-type temperature-compensated attenuator with a room temperature attenuation of 4dB. The first and third resistors of the attenuator are fixed. Based on the calculation model of the π-type attenuator, calculate and analyze the factory test data of the temperature-compensated attenuator (the attenuation value is different at different temperatures) under a wide temperature environment, obtain the maximum attenuation change ΔATT0 of the temperature-compensated attenuator under a wide temperature condition, and obtain the resistance value of the second resistor (thermistor) under a wide temperature condition.

[0074] Specifically, such as Figure 4 As shown, the temperature-compensated attenuator is a π-type attenuator model, and the π-type attenuator consists of a first resistor, a second resistor, and a third resistor, with the second resistor being a thermistor.

[0075] The resistance values ​​of the first and third resistors are expressed as follows:

[0076] The expression for the resistance value of the second resistor is:

[0077] In the formula, R 1. R 2. R 3 represents the resistance values ​​of the first, second, and third resistors, respectively. Z 0 represents the input and output impedance values; the default value in RF circuits is 50Ω. K Indicates the attenuation coefficient. A This indicates the attenuation amount. After selecting the model of the temperature-compensated attenuator, R 1. R 3 represents a fixed resistance value.R 2 represents the variable resistance that changes with temperature; therefore, temperature changes cause... R Changes in the value of 2 cause changes in the attenuation value.

[0078] like Figure 5 As shown in this embodiment, according to the manual for a certain type of 4dB temperature attenuator, the internal structure of this temperature-compensated attenuator is a π-type attenuation structure. R 1 and R 3 is 221Ω, R 2 is a thermistor, which maintains a stable resistance value according to temperature changes.

[0079] like Figure 6 The figure shows the factory test data for temperature (Temp) and attenuation value (ATT) of a certain type of temperature-compensated attenuator. The π-type attenuation value was calculated under different temperature conditions. R 1 and R When 3 is 221Ω, it can be calculated R 2. The variation of the thermistor value with temperature is shown in Table 1.

[0080] Table 1. Calculation table for thermistors at different temperatures.

[0081]

[0082] As shown in Table 1, during the temperature change from -40℃ to 105℃, the attenuation of this type of temperature-compensated attenuator changed from 7.28dB to 2.74dB, with the maximum attenuation change ΔATT0 being 4.54dB; the thermistor resistance changed from 82.3Ω to 11.1Ω.

[0083] S3. Based on the analysis results of the parallel resistance characteristics and attenuation characteristics, a resistor with a fixed resistance value is connected in parallel across the thermistor in the temperature compensation attenuator to obtain the optimized circuit of the temperature compensation attenuator. The attenuation change value corresponding to different attenuation levels under wide temperature conditions is calculated, and the maximum attenuation change ΔATT1 under different levels is obtained.

[0084] Based on the analysis results of the parallel resistance characteristics and π-type attenuator characteristics, certain fixed-value resistors are connected in parallel across the thermistor in the attenuator to obtain the optimized temperature-compensated attenuator circuit for different attenuation levels at room temperature. The attenuation values ​​corresponding to different attenuation levels under wide temperature conditions are calculated, and the maximum attenuation change at different levels is obtained. The optimization of the temperature-compensated attenuator circuit includes the following steps:

[0085] S31. Based on the attenuation characteristic analysis results, and combined with the parallel resistance characteristic, a resistor with a fixed resistance value is connected in parallel across the thermistor in the attenuator to obtain the optimized circuit of the temperature-compensated attenuator.

[0086] Specifically, in this embodiment, based on the characteristics of parallel resistors, it can be known that when the resistors R andR 2 in parallel, R / / R 2= R * R 2 / ( R + R 2) Resistors after parallel connection R / / R 2 should not exceed min[ R , R 2]. Therefore, at room temperature, thermistors R 2. A fixed resistor is connected in parallel across the two ends. R During the process of high and low temperature changes, R / / R 2. With minimal resistance change, the temperature-compensated attenuator exhibits minimal attenuation variation in both high and low temperature operating environments. It can be used to control gain changes and signal amplitude fluctuations caused by temperature variations. An optimized temperature-compensated attenuator circuit is shown below. Figure 7 As shown.

[0087] S32. Calculate the fixed resistance value connected in parallel across the thermistor in the temperature-compensated attenuator optimization circuit using different attenuation levels at room temperature (25℃); calculate the optimized attenuation value of the temperature-compensated attenuator under wide temperature range using the fixed resistance value connected in parallel at this attenuation level, and obtain the maximum attenuation change under different levels.

[0088] Specifically, such as Figure 7 As shown, in this embodiment, the relationship between the calculated values ​​of the parallel resistance corresponding to different attenuation levels and the attenuation change under a wide temperature range is determined by attenuation calculation. Based on this relationship, the attenuation amount used for temperature compensation in the transceiver path is determined, thus optimizing the temperature-compensated attenuator circuit. This includes the following steps:

[0089] S321. Based on the selected 4dB π-type temperature-compensated attenuator, determine the first resistor. R 1 and the third resistor R The resistance value of 3 is calculated based on the factory test data of the attenuation value of the temperature-compensated attenuator over a wide temperature range, and using the calculation method for the second resistor. R 2. Resistance values ​​of (thermistor) at different temperatures;

[0090] S322. At room temperature (25℃), calculate the parallel resistance value in the temperature-compensated attenuator optimization circuit according to the target attenuation level. R / / R 2. Calculate the fixed resistor to be connected in parallel, based on the thermistor value at room temperature and the formula for parallel resistor connection. R The resistance value;

[0091] S323, Based on fixed resistor R Determine the resistance value of the fixed resistor over a wide temperature range. R With thermistorR 2. Resistance value after parallel connection R / / R 2;

[0092] S324, Based on the fixed resistor R With thermistor R 2. Resistance value after parallel connection R / / R 2, and based on the attenuation amount A The calculation method determines the attenuation amount over a wide temperature range and obtains the maximum attenuation change of the target attenuation range;

[0093] S325. Calculate the different fixed resistors according to different attenuation levels. R The resistance value, and based on the attenuation. A The calculation method determines the attenuation amount over a wide temperature range and obtains the maximum attenuation change at different levels;

[0094] S326. Based on the maximum attenuation change of different attenuation levels, select an appropriate attenuation level to reduce the number of stages in the temperature-compensated attenuator. After cascading, the attenuation change is close to the gain change of the cascaded amplifiers in the channel, ensuring that the channel gain index fluctuates within the allowable range, thus completing the optimization of the temperature-compensated attenuator circuit.

[0095] In this embodiment, taking a 3dB attenuation setting at room temperature (25℃) as an example, according to Figure 8 The flowchart of the temperature-compensated attenuator circuit optimization calculation process can be used to obtain the parallel resistance value and the calculated attenuation value at different temperatures, as shown in Table 2.

[0096] Table 2. Calculation list of π-attenuation 3dB attenuation optimization data

[0097]

[0098] The first step is to determine the first resistor based on the selected 4dB π-type temperature-compensated attenuator at room temperature (25℃). R 1 and the third resistor R The resistance value of 3 is calculated based on the factory test data of the attenuation value of the temperature-compensated attenuator over a wide temperature range, and using the calculation method for the second resistor. R 2. Resistance values ​​of (thermistor) at different temperatures;

[0099] The second step is to calculate the parallel resistors in the optimized circuit of the temperature-compensated attenuator based on the target attenuation level of 3dB at room temperature (25℃). R / / R The resistance is 13.3Ω, and the thermistor is 23.6Ω. What is the value of the fixed resistor to be connected in parallel? R The calculated value is 30.5Ω;

[0100] The third step is based on a fixed resistor. RGiven a resistance of 30.5Ω, calculate the fixed resistance over a wide temperature range. R With thermistor R 2. Resistors in parallel R / / R The resistance values ​​are shown in Table 2.

[0101] Fourth step, according to R / / R 2. Calculate the resistance value and the attenuation over a wide temperature range. The maximum attenuation change at the target attenuation level is found to be 1.53dB.

[0102] After circuit optimization, the attenuation variation over a wide temperature range was 4.54dB before resistor adjustment and 1.53dB after resistor adjustment, an improvement of more than 3dB.

[0103] Similarly, through calculation, the parallel resistance values ​​and π-degradation temperature change values ​​for attenuation of 3.5dB, 2dB, and 1dB at room temperature can be obtained. For example... Figure 9 The figure shows the temperature curves corresponding to different attenuation amounts after optimization of a certain type of 4dB temperature-compensated attenuation circuit.

[0104] By calculating the attenuation levels, we can obtain the calculated values ​​of parallel resistance for different attenuation levels and the relationship between the attenuation changes under wide temperature conditions as shown in Table 3.

[0105] Table 3. Calculated values ​​of parallel resistance and attenuation variation over a wide temperature range (-40℃~105℃) for different attenuation levels.

[0106]

[0107] Depend on Figure 9 As shown in Table 3, theoretical calculations indicate that within the temperature range of -40℃ to 105℃, a smaller attenuation setting results in a smaller attenuation change. However, a smaller attenuation setting also requires a smaller fixed resistor value connected in parallel across the temperature-compensated attenuator, increasing the difficulty of engineering implementation. Therefore, 2dB and 3dB attenuation settings are generally chosen. These settings facilitate circuit optimization and allow the attenuation change to be controlled within 1.53dB, which is close to the gain change of the amplifier over a wide temperature range, making them suitable for temperature compensation in transceiver paths.

[0108] In addition, after circuit optimization, the input / output impedance of the original temperature-compensated attenuator will change. To ensure that the signal operates in impedance-matched state, a 50Ω π-type attenuator is connected to the back end of the temperature-compensated attenuator.

[0109] In engineering practice, it is usually not possible to find a resistor that is exactly the same as the calculated value of R in Table 3. A suitable resistor can be selected according to the standard resistor value table, and the resistance value can be made close to the calculated value by connecting the resistors in series and parallel. The resistance value can be fine-tuned during the debugging process.

[0110] S4. Based on the maximum gain change ΔG in S1, preset the number of temperature-compensated attenuator stages, select the attenuation level of the temperature-compensated attenuator optimization circuit, and obtain the maximum attenuation change ΔATT after cascading the temperature-compensated attenuator optimization circuit under wide temperature conditions. Obtaining ΔATT includes the following steps:

[0111] S41. Based on the cascaded amplifiers in the path, estimate the maximum gain change ΔG under a wide temperature range, and preset the number of stages of the temperature-compensated attenuator.

[0112] Specifically, in this embodiment, in step S1, the maximum gain change ΔG caused by temperature change after cascading 6 amplifier stages is estimated to be ≤6dB, and the temperature-compensated attenuator in the preset channel is cascaded in 3 stages.

[0113] S42. Select a certain attenuation level after the temperature-compensated attenuator is optimized, and obtain the maximum attenuation change ΔATT after the temperature-compensated attenuator is cascaded under a wide temperature range.

[0114] Specifically, in this embodiment, as shown in Table 3, if the 4dB temperature-compensated attenuator is not optimized, the attenuation variation over a wide temperature range is 4.54dB, and the maximum gain change due to temperature variation after 3-stage cascading is ΔATT=13.62dB. This fluctuation range far exceeds the performance requirements, therefore, circuit optimization of the temperature-compensated attenuator is necessary. With the optimized circuit design selected at a 3dB level, the attenuation variation over a wide temperature range is 1.53dB, and the maximum gain change due to temperature variation after 3-stage cascading is ΔATT=4.59dB. With the optimized circuit design selected at a 2dB level, the attenuation variation over a wide temperature range is 0.43dB, and the maximum gain change due to temperature variation after 3-stage cascading is ΔATT=1.29dB.

[0115] S5. Determine the relationship between |ΔG-ΔATT| and the dynamic range. If it is greater than the dynamic range, adjust the attenuation setting or the number of stages in the temperature-compensated attenuator. If it is not greater than the dynamic range, the design requirements are met. The steps to ensure that |ΔG-ΔATT| meets the dynamic range requirements include the following:

[0116] S51. If the condition |ΔG-ΔATT|≤dynamic range is met, proceed directly to step S6.

[0117] Specifically, in this embodiment, ΔG≤6dB. When the 3dB setting is selected, ΔATT=4.59dB, and |ΔG-ΔATT|=1.41≤2dB, which meets the design requirements, and the process proceeds directly to step S6.

[0118] S52. If the condition |ΔG-ΔATT|≤dynamic range is not met, adjust the attenuation level and then make the judgment again. If the condition is met, proceed directly to step S6.

[0119] Specifically, in this embodiment, if the ΔG value is too small, for example, ΔG≤2.59dB, when the 3dB setting is selected, |ΔG-ΔATT|≥2dB, then the setting selection is inappropriate, and the setting needs to be reduced before comparison. When the 2dB setting is selected, ΔATT=1.29dB, and |ΔG-ΔATT|≤1.3dB, then the design requirements are met, and the process proceeds directly to step S6.

[0120] S53. If the judgment condition is still not met after adjusting the gear, add a temperature compensation attenuator to the circuit, reselect the attenuation gear, until the dynamic range condition is met (|ΔG-ΔATT|≤), and proceed to step S6.

[0121] Specifically, in this embodiment, if the ΔG value is too large, for example, 6.59 dB≤ΔG≤8dB, when the 3dB setting is selected, |ΔG-ΔATT|≥2dB. After adjusting to a smaller setting, the requirements still cannot be met. In this case, a temperature compensation attenuator should be added from a design perspective. For example, a 4-stage temperature compensation attenuator should be designed. When the 3dB setting is selected, ΔATT=6.12dB, and |ΔG-ΔATT|≤2dB. Proceed to step S6.

[0122] Through the analysis in step S5, after designing a 6-stage cascaded amplifier for the receiving channel, the temperature-compensated attenuator circuit is optimized to a 3dB attenuation level. A 3-stage cascaded temperature-compensated attenuator circuit is designed. |ΔG-ΔATT| is less than the gain fluctuation range. Theoretically, selecting a 3dB attenuation level and cascading a 3-stage temperature-compensated attenuator can meet the performance requirements.

[0123] S6. Based on the gain or insertion loss of each stage of the RF transceiver circuit, rationally position the temperature-compensated attenuator to ensure the signal operates in the linear region. Optimize the parallel resistance value of the temperature-compensated attenuator to achieve engineering testing and iteration until the preset performance requirements are met. This includes the following steps:

[0124] S61. Based on the gain or insertion loss of each stage of the RF transceiver circuit, perform simulation analysis on the transmit / receive channel signal, and reasonably arrange the position of the temperature compensation attenuator to ensure that the signal operates in the linear region.

[0125] Specifically, such as Figure 1As shown, in this embodiment, amplifiers with different linearity indices are selected according to the receiving performance requirements. The insertion loss and impedance matching of each stage of the device are comprehensively considered to ensure that each stage of the amplifier operates at a specific gain while maintaining signal performance within the linear region. Through signal path simulation, the receiving path consists of a 6-stage amplifier, a 2-stage frequency converter, a 5-stage filter, a 3-stage temperature compensation circuit, and a 3-stage 50Ω π-type attenuator matching circuit. The temperature compensation circuit is located at the amplifier front end, near the nonlinear operating region, specifically at Stages 4, 10, and 15. Utilizing the complementary gain characteristics of the temperature compensation attenuator and the amplifier, it dynamically adjusts the local signal amplitude, ensuring that each stage of the amplifier operates within the linear region, maintaining a clean signal spectrum, effectively suppressing harmonic distortion in the receiving channel, improving the signal-to-noise ratio, and guaranteeing communication quality. Because the input / output impedance of the original temperature compensation attenuator changes after optimization, to ensure the signal operates in an impedance-matched state, [further details are needed]. Figure 1 Stages 5, 11, and 16 are connected to 50Ω π-type attenuators. The number of attenuators and the attenuation should not be too large to reduce the gain loss of the amplifier in the path. Therefore, the number of temperature-compensated attenuator stages should also be minimized to improve the effective gain of the power amplifier, reduce the number of power amplifier stages, and achieve the effect of reducing costs.

[0126] S62. Optimize the parallel resistance value of the temperature compensation attenuator, and carry out engineering testing and iteration until the preset target requirements are met.

[0127] Specifically, such as Figure 1 As shown in this embodiment, the main temperature-sensitive components in this path are an amplifier and a temperature-compensated attenuation circuit. Adjusting the temperature-compensated circuit is crucial for ensuring the output signal meets the fluctuation range, and the value of the parallel resistor in the temperature-compensated circuit is a key aspect of the adjustment process. Generally, this is achieved by repeatedly testing the deviations of the indicators under low temperature, normal temperature, and high temperature conditions.

[0128] Implementing engineering testing and iteration includes the following steps:

[0129] S621. After processing into equipment, without optimizing the temperature compensation attenuator circuit, the equipment is tested at room temperature and high and low temperatures to obtain the measured channel gain data and form an initial record.

[0130] Specifically, such as Figure 10 As shown in the figure, in the temperature compensation circuit engineering implementation process of this embodiment, taking the point frequency receiving path as an example, the working frequency is 121.5MHz, the working temperature range is -40℃~85℃, and the receiving gain index is 62dB±2dB.

[0131] Step 1: Before optimizing the temperature compensation attenuation circuit, the device was tested at room temperature, high temperature and low temperature at the operating frequency. The measured data of the initial state of the receiving gain are shown in Table 4.

[0132] Table 4 Measured values ​​of receiver gain

[0133]

[0134] Step 2: Based on the channel circuit design, estimate the gain fluctuation range before temperature-compensated attenuation circuit optimization, and determine whether the initial measured values ​​meet the estimation requirements. If the estimation requirements are not met, monitor temperature-drift sensitive circuit parameters such as the power module output voltage, mixer loss, and amplifier bias circuit voltage divider in the path. After fault analysis and troubleshooting for circuits with abnormal results, conduct another round of wide-temperature receiver gain testing. If the estimation requirements are met, proceed to the temperature-compensated attenuation circuit optimization process.

[0135] As shown in Table 4, in the initial state, at a frequency of f1 = 121.5 MHz, the gain fluctuation range of -40℃ to 85℃ is 9 dB. In the 6-stage amplifier, 2 stages are... Figure 2 Amplifier type, 4 stages Figure 3 Amplifier type: Based on the gain-temperature relationship curves of the two selected amplifier types, within the frequency band of 100MHz to 400MHz at temperatures ranging from -40℃ to +85℃. Figure 2 The gain of the amplifier changes by less than 2dB due to temperature. Figure 3 The gain of the intermediate amplifier changes by 0.5dB due to temperature. After cascading multiple power amplifiers, the maximum gain change is no more than 6dB under conditions of -40℃ to 85℃. A three-stage temperature-compensated attenuator is connected in series. According to factory test data, before optimization, the attenuation difference due to temperature changes in the temperature-compensated attenuators can reach approximately 4.5dB. After three temperature-compensated attenuators are connected in series, temperature changes at the same frequency point can cause a 13dB to 14dB change in signal amplitude. Even after offsetting the power amplifier gain change, this still results in a 7dB to 8dB fluctuation. If the temperature-compensated attenuation circuit is not optimized, the gain fluctuation range of the receiving channel will be too large, making it impossible to meet the 62dB±2dB specification. Therefore, the temperature-compensated circuit needs adjustment.

[0136] S622. After optimizing the temperature compensation attenuation circuit according to the design level, the equipment is tested at room temperature and high and low temperatures to obtain the measured data of the channel gain after the design optimization, and to determine whether the gain meets the index requirements.

[0137] Specifically, such as Figure 10As shown, in this embodiment, in the engineering implementation process of the temperature compensation circuit, after handling abnormal circuits in the path, ensuring the normal operation of each circuit in the channel, based on theoretical analysis and calculation, a 3dB attenuation setting is selected to optimize the 3-stage temperature compensation attenuator. A resistor of approximately 30.5Ω is connected in parallel across the temperature compensation attenuator R2. Figure 9 The 3dB curve shows that, under conditions of -40℃ to 85℃, the attenuation change is no greater than 1.5dB. After three stages of temperature-compensated attenuators are connected in series, the attenuation change is 4.5dB. That is, when changing from a low temperature to a high temperature, the attenuation value of the cascaded temperature-compensated attenuators decreases by 4.5dB, while the amplifier gain decreases by 6dB. Therefore, the total gain change of the path increases by 1.5dB. Theoretically, the gain fluctuation is within the specified range and meets the requirements. The optimized equipment is then tested at room temperature, high temperature, and low temperature at the operating frequency to obtain measured data of the optimized receiving gain, and the gain is judged to meet the 62±2dB requirement.

[0138] S623. If the requirements are met, the test ends; if not, adjust the parallel resistor of the temperature compensation attenuation circuit and repeat the test and optimization operation until the gain of the path meets the requirements.

[0139] Specifically, such as Figure 10 As shown in this embodiment, in the temperature compensation circuit engineering implementation process, if the optimized measured gain index meets 62±2dB, the temperature compensation circuit engineering implementation process ends; if the measured gain index does not meet the requirements, the fixed resistance value of the temperature compensation attenuation optimization circuit is adjusted according to the difference between the measured data and the gain index, and the next round of wide temperature test is carried out until the gain index of the path meets the index requirements.

[0140] Because of the inconsistency in temperature drift between the temperature-compensated attenuator and the channel amplifier gain, one or more rounds of optimization tests at room temperature and high and low temperatures are usually required. Based on the test data, the gain values ​​of each stage of the amplifier need to be adjusted, and the resistance value of the resistor connected in parallel across the temperature-compensated attenuator needs to be fine-tuned until the gain of the receiving path meets 62dB±2dB.

[0141] In a broadband receiving path, amplifiers, filters, and mixers in the path may exhibit different frequency responses and temperature drift curves due to frequency and temperature variations. In such cases, a combination of a temperature-compensated attenuator and a digitally controlled attenuator can be selected. This approach can dynamically adjust the signal amplitude in the path and maintain signal linearity by optimizing the temperature-compensated attenuator, while the digitally controlled attenuator can eliminate the frequency response variations of the components in the path, thus increasing circuit complexity.

[0142] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combination of these technical features does not contradict each other, it should be considered within the scope of this specification. Those skilled in the art will understand that all or part of the steps in the methods of the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium. When the program is executed, it includes the steps described in the above methods. The storage medium may be, for example, ROM / RAM, magnetic disk, optical disk, etc.

[0143] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A temperature compensation method for radio frequency transceiver circuits under wide temperature conditions, characterized in that, Includes the following steps: S1. Perform signal simulation on the transceiver channel according to the transceiver specifications to ensure that the channel gain meets the preset specifications, determine the number of amplifier stages in the transceiver channel, and estimate the maximum gain change ΔG caused by the wide temperature range of the transceiver channel amplifier based on the gain curves of various selected amplifiers. S2. Select a temperature-compensated attenuator with a room temperature attenuation of 4dB. Based on the attenuator calculation model, calculate and analyze the factory test data of the temperature-compensated attenuator under a wide temperature environment, obtain the maximum attenuation change ΔATT0 of the temperature-compensated attenuator under a wide temperature condition, and obtain the resistance value of the second resistor under a wide temperature condition. S3. Based on the analysis results of the parallel resistance characteristics and attenuation characteristics, a resistor with a preset fixed resistance value is connected in parallel across the thermistor in the temperature compensation attenuator to obtain the optimized circuit of the temperature compensation attenuator. The attenuation change value corresponding to different attenuation levels under wide temperature conditions is calculated, and the maximum attenuation change ΔATT1 under different levels is obtained. S4. Based on the maximum gain change ΔG, preset the number of temperature-compensated attenuator stages, select the attenuation level of the temperature-compensated attenuator optimization circuit, and obtain the maximum attenuation change ΔATT after the cascaded temperature-compensated attenuator optimization circuit under wide temperature conditions. S5. Determine the relationship between |ΔG-ΔATT| and the dynamic range. If it is greater than the dynamic range, adjust the attenuation setting or the number of stages of the temperature-compensated attenuator. If it is less than or equal to the dynamic range, it is determined that the design requirements are met. S6. Based on the gain or insertion loss of each stage of the RF transceiver circuit, rationally arrange the position of the temperature-compensated attenuator to ensure that the signal operates in the linear region. By optimizing the parallel resistance value of the temperature-compensated attenuator, engineering testing and iteration are carried out until the preset performance requirements are met.

2. The temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 1, characterized in that, The steps of performing signal simulation on the transceiver channel according to the transceiver specifications to ensure that the channel gain meets the preset specifications, determining the number of amplifier stages in the transceiver channel, and estimating the maximum gain change ΔG caused by the wide temperature range of the transceiver channel amplifiers based on the gain curves of various selected amplifiers include the following: S11. Perform signal simulation on the transceiver channel according to the transceiver gain requirements, select the amplifier type, and design the number of amplifier stages in the transceiver channel; S12. Based on the gain curve of the selected amplifier, obtain the gain variation range under wide temperature conditions; S13. Based on the number of amplifier stages selected in the path, estimate the maximum gain change ΔG of the amplifier due to temperature changes.

3. The temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 1, characterized in that, Based on the analysis results of the parallel resistance characteristics and attenuation characteristics, a resistor with a preset fixed resistance value is connected in parallel across the thermistor in the temperature-compensated attenuator to obtain the optimized circuit of the temperature-compensated attenuator. The calculation of the attenuation change value corresponding to different attenuation levels under wide temperature conditions and the acquisition of the maximum attenuation change ΔATT1 under different levels include the following steps: S31. Based on the attenuation characteristic analysis results, and combined with the parallel resistance characteristic, a resistor with a fixed resistance value is connected in parallel across the thermistor in the attenuator to obtain the optimized circuit of the temperature-compensated attenuator. S32. Calculate the fixed resistance value connected in parallel across the thermistor in the temperature-compensated attenuator optimization circuit using different attenuation levels at room temperature; calculate the optimized attenuation value of the temperature-compensated attenuator under wide temperature range using the fixed resistance value connected in parallel at this attenuation level, and obtain the maximum attenuation change ΔATT1 under different levels.

4. The temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 3, characterized in that, The process of calculating the fixed resistance value connected in parallel across the thermistor in the temperature-compensated attenuator optimization circuit using different attenuation levels at room temperature, and then calculating the optimized attenuation value of the temperature-compensated attenuator over a wide temperature range using the fixed resistance value connected in parallel at different attenuation levels, and obtaining the maximum attenuation change ΔATT1 at different levels includes the following steps: S321. Based on the selected 4dB π-type temperature-compensated attenuator, determine the first resistor. R 1 and the third resistor R The resistance value of 3 is calculated based on the factory test data of the attenuation value of the temperature-compensated attenuator over a wide temperature range, and the second resistance is also calculated. R 2. Resistance values ​​at different temperatures, wherein the second resistor R 2 is a thermistor R 2; S322. At room temperature, calculate the parallel resistance value in the temperature-compensated attenuator optimization circuit based on the target attenuation level. R / / R 2. Calculate the fixed resistor to be connected in parallel, based on the thermistor value at room temperature and the formula for parallel resistor connection. R The resistance value; S323, Based on fixed resistor R Determine the resistance value of the fixed resistor over a wide temperature range. R With thermistor R 2. Resistance value after parallel connection R / / R 2; S324, Based on the fixed resistor R With thermistor R 2. Resistance value after parallel connection R / / R 2. Determine the attenuation amount over a wide temperature range to obtain the maximum attenuation change at the target attenuation level; S325. Calculate the different fixed resistors according to different attenuation levels. R The resistance value was determined, and the attenuation under a wide temperature range was determined to obtain the maximum attenuation change ΔATT1 under different ranges. S326. Based on the maximum attenuation change of different attenuation levels, select an appropriate attenuation level so that the attenuation change after cascading is close to the gain change of the cascaded amplifiers in the channel, ensuring that the channel gain index fluctuates within the allowable range, and completing the optimization of the temperature-compensated attenuator circuit.

5. A temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 4, characterized in that, When the actual resistance value is not equal to the target resistance value of the fixed resistor, a suitable resistor is selected according to the standard resistor value table, and the resistance value is made equal to or close to the target resistance value of the fixed resistor by connecting the resistors in series and parallel.

6. The temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 1, characterized in that, The process of presetting the number of temperature-compensated attenuator stages based on the maximum gain change ΔG, selecting the attenuation level of the temperature-compensated attenuator optimization circuit, and obtaining the maximum attenuation change ΔATT after cascading the temperature-compensated attenuator optimization circuit under wide temperature conditions includes the following steps: S41. Based on the cascaded amplifiers in the path, estimate the maximum gain change ΔG under a wide temperature range, and preset the number of stages of the temperature-compensated attenuator. S42. Select a certain attenuation level after the temperature-compensated attenuator is optimized, and obtain the maximum attenuation change ΔATT after the temperature-compensated attenuator is cascaded under a wide temperature range.

7. The temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 1, characterized in that, The determination of the relationship between |ΔG-ΔATT| and the dynamic range involves the following steps: If |ΔG-ΔATT| is greater than the dynamic range, the attenuation setting or the number of stages in the temperature-compensated attenuator is adjusted; if |ΔG-ΔATT| is less than or equal to the dynamic range, the design requirements are met. S51. When |ΔG-ΔATT|≤dynamic range, proceed directly to step S6; when |ΔG-ΔATT|>dynamic range, reduce the attenuation level and then make a judgment. If the dynamic range condition is met, proceed directly to step S6. S52. If the dynamic range condition is still not met after adjusting the gear, add a temperature compensation attenuator in the path, reselect the attenuation gear, and continue until |ΔG-ΔATT|≤dynamic range before proceeding to step S6.

8. The temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 1, characterized in that, The process of rationally positioning the temperature-compensated attenuator based on the gain or insertion loss of each stage of the RF transceiver circuit to ensure the signal operates in the linear region, and optimizing the parallel resistance value of the temperature-compensated attenuator to achieve engineering testing and iteration until the preset performance requirements are met, includes the following steps: S61. Based on the gain or insertion loss of each stage of the RF transceiver circuit, perform simulation analysis on the transmit / receive channel signal, and reasonably arrange the position of the temperature compensation attenuator to ensure that the signal operates in the linear region. S62. Optimize the parallel resistance value of the temperature compensation attenuator, and carry out engineering testing and iteration until the preset target requirements are met.

9. A temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 8, characterized in that, The process of optimizing the parallel resistance value of the temperature-compensated attenuator, and implementing engineering testing and iteration until the preset performance requirements are met, includes the following steps: S621. After processing into equipment, without optimizing the temperature compensation attenuator circuit, the equipment is tested at room temperature and high and low temperatures to obtain the measured channel gain data and form an initial record. S622. After optimizing the temperature compensation attenuation circuit according to the design level, the equipment is tested at room temperature and high and low temperatures to obtain the measured data of the channel gain after the design optimization, and to determine whether the gain meets the preset index requirements. S623. The test ends when the target requirements are met. If the requirements are not met, the parallel resistor of the temperature compensation attenuation circuit is adjusted, and the test and optimization operations are repeated until the gain of the path meets the preset requirements.

10. A temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 9, characterized in that, The repeated execution of tests and optimizations until the gain metric of the pathway meets the preset metric requirements includes: Based on the temperature drift inconsistency between the temperature-compensated attenuator and the amplifier gain, one or more rounds of room temperature and high / low temperature tests are conducted. The gain values ​​of each stage of the amplifier are adjusted according to the test data, and the fixed resistors connected in parallel across the temperature-compensated attenuator are finely adjusted until the gain index of the receiving path meets the receiving gain index requirements.

11. A temperature compensation method for a radio frequency transceiver circuit under a wide temperature environment according to claim 10, characterized in that, The receiving path consists of a 6-stage amplifier, a 2-stage frequency converter, a 5-stage filter, a 3-stage temperature compensation circuit, and a 3-stage 50Ω π-type attenuator matching circuit, wherein the temperature compensation attenuation circuit is located at the front end of the amplifier.

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