A device for detecting flatness of a substrate and a method for calibrating a substrate

Abstract

The application discloses a device for detecting flatness of a substrate and a substrate calibration method. The device comprises a device support, a laser assembly and a positioner. The device support comprises a first support, a second support and a transverse connecting piece which are arranged horizontally and vertically. The first support and the second support form a calibration area. The laser assembly is vertically slidably mounted on the first support. The laser assembly comprises a first laser module and a second laser module which are fixedly arranged vertically. The first laser module and the second laser module are synchronously slidable. The first laser module is arranged obliquely downward and can emit an inclined laser beam at a certain angle with a horizontal plane towards the calibration area. The second laser module is horizontally arranged and can emit a horizontal laser beam towards the second support. The positioner is adjustably mounted on the second support. By using the device and the method, the flatness of the substrate can be calibrated at the furnace opening, and the qualified rate of film production can be improved.

Description

Technical Field

[0001] This invention relates to the technical field of liquid phase epitaxial growth equipment, and in particular to a device for detecting substrate flatness and a substrate calibration method. Background Technology

[0002] Rare-earth garnet thin films exhibit prominent magneto-optical effects, large Faraday rotation angles, and low light absorption coefficients, making them suitable for fabricating key optical devices such as optical isolators and optical circulators. Currently, most rare-earth garnet thin films are grown using liquid-phase epitaxy. After the raw material melting process is completed, the substrate needs to be placed in a seed crystal holder and then lowered into a crucible for the crystal growth process.

[0003] Currently, most methods rely on visual inspection to determine if the substrate is level at the seed crystal clamp position. This method is rather crude and cannot provide precise control over the substrate's flatness. When the substrate 10 is tilted, the molten metal will enter the gap 50 between the substrate 10 and the seed crystal clamp 20 (see...). Figure 1 During the cooling process, the liquid material in the gap will solidify, resulting in uneven film thickness. Uneven thickness can easily cause film cracking, leading to a decrease in product yield. Summary of the Invention

[0004] The purpose of this invention is to provide a device and a substrate calibration method for detecting substrate flatness, which can calibrate the flatness of the substrate at the furnace mouth, thereby improving the yield rate of thin film production.

[0005] To achieve the above objectives, the solution of the present invention is:

[0006] An apparatus for detecting the flatness of a substrate includes an apparatus support, a laser assembly, and a positioner;

[0007] The device support includes a first support and a second support that are horizontally spaced apart and extend vertically. A transverse connector is connected to the longitudinal side of the bottom of the first support and the second support. A calibration area is formed between the first support, the second support and the transverse connector.

[0008] The laser assembly can be vertically slidably mounted on the first bracket; the laser assembly includes a first laser module and a second laser module that are fixedly spaced vertically upwards and downwards, and the first laser module and the second laser module slide synchronously when the laser assembly slides up and down;

[0009] The first laser module is set at an angle downwards and can emit inclined laser beams at a certain angle to the horizontal plane toward the calibration area. The second laser module is set horizontally and can emit horizontal laser beams toward the second support.

[0010] The locator is height-adjustably mounted on a second bracket; the second bracket has vertically distributed scale lines.

[0011] Furthermore, the first laser module is fixed to the first bracket at a 45° downward angle.

[0012] Furthermore, the first laser module is mounted on the first bracket and is adjustable for both vertical and horizontal rotation.

[0013] The present invention also provides a substrate calibration method, using the aforementioned apparatus, comprising the following steps:

[0014] S1, Calibration device:

[0015] S11. Prepare a horizontal workbench;

[0016] S12. Place the substrate on a horizontal worktable, place the device on a horizontal ground and surround the worktable and the substrate, so that the substrate is located within the calibration area.

[0017] S13. Control the second laser module to emit a horizontal laser beam so that the second bracket receives the horizontal laser beam; then move the laser assembly vertically along the first bracket. When the horizontal laser beam hits the substrate and the second bracket does not receive the horizontal laser beam, move the laser assembly upward so that the horizontal laser beam just reappears on the second bracket. Then place and fix the positioner at the position where the horizontal laser beam reappears on the second bracket.

[0018] S14. Control the laser assembly to move down so that the horizontal laser beam re-irradiates the substrate. Then control the first laser module to emit a 45° inclined laser beam towards the substrate. Mark the laser point reflected from the substrate on the second bracket as A1 and record the vertical distance L1 between the laser point A1 and the upper end of the locator. At the same time, mark the position on the transverse connector corresponding to the transverse ends of the substrate.

[0019] S15. Based on the position of laser point A1 on the scale line of the second bracket and the horizontal distance H between the incident point on the substrate and the second bracket, calculate the vertical distance between the laser point and the upper end of the locator when the inclined laser beam is 30° and 60°, and record them as L30 and L60 respectively.

[0020] S2, Calibration substrate:

[0021] S21. Place the substrate at the seed crystal clamp, place the device calibrated in step S1 outside the growth furnace and the seed crystal clamp, and align the substrate according to the marks on the transverse connector to determine the horizontal transverse placement position of the device. At the same time, select a longitudinal variable distance V between the transverse connector and the substrate, and ensure that both the horizontal laser beam and the tilted laser beam can irradiate the substrate.

[0022] S22. Control the second laser module to emit a horizontal laser beam and move the laser component vertically. When the horizontal laser beam hits the substrate, if the second support does not receive the horizontal laser beam, move the laser component upward and place the positioner on the second support at the position where the horizontal laser beam just reappears.

[0023] S23. Move the laser assembly down again so that the horizontal laser beam irradiates the substrate. Control the first laser assembly to emit an inclined laser beam at the same angle as in step S1 onto the substrate. Mark the laser point reflected from the substrate on the second support as A2, and record the vertical distance L2 from the laser point A2 to the top of the positioner. Compare L1 and L2. When they are the same, it is determined that the substrate is horizontal. Otherwise, compare the difference between L2 and L30 or L60, and use this as a reference to quickly fine-tune the position of the substrate 10 until L1 is always equal to L2 after the substrate has rotated at least one revolution.

[0024] S24. By adjusting the longitudinal position of the device, the size of the longitudinal variable distance V is adjusted at least once, and steps S22 and S23 are repeated to finally complete the calibration of the substrate mounting flatness.

[0025] This invention also provides another substrate calibration method using the aforementioned apparatus, comprising the following steps:

[0026] S1, Calibration device:

[0027] S11. Prepare a horizontal workbench;

[0028] S12. Place the substrate on a horizontal worktable, place the device on a horizontal ground and surround the worktable and the substrate, so that the substrate is located within the calibration area.

[0029] S13. Control the second laser module to emit a horizontal laser beam. At this time, the second support receives the horizontal laser beam. Then, the laser assembly is moved vertically along the first support. When the horizontal laser beam hits the substrate and the second support does not receive the horizontal laser beam, the laser assembly is moved upward so that the horizontal laser beam emitted by the second laser module just reappears on the second support. Then, the positioner is placed and fixed on the second support at the position irradiated by the horizontal laser beam.

[0030] S14. Move the laser assembly down again so that the horizontal laser beam irradiates the substrate;

[0031] Next, the first laser module is controlled to rotate and emit an inclined laser beam toward the positioning point D1 of the substrate itself, and the laser point reflected from the positioning point D1 on the second bracket is marked as A1', and the vertical distance L1' between the laser point A1' and the upper end of the positioner is recorded;

[0032] Then, the first laser module is rotated to emit an inclined laser beam toward the positioning point D2 of the substrate itself, and the laser point reflected from the positioning point D2 on the second bracket is marked as A1'', and the vertical distance L1'' between the laser point A1'' and the upper end of the locator is recorded;

[0033] Meanwhile, marks are made on the longitudinal positions of the substrate positioning points D1 and D2 on the transverse connector, and the minimum longitudinal spacing V' between the transverse connector and the substrate is recorded.

[0034] S2, Calibration substrate:

[0035] S21. Place the substrate at the seed crystal clamp, place the calibrated device outside the growth furnace and the seed crystal clamp, and align the substrate according to the markings on the transverse connector and the minimum longitudinal spacing V' to determine the placement position of the device.

[0036] S22. Control the second laser module to emit a horizontal laser beam and move the laser component vertically. When the horizontal laser beam hits the substrate, if the second support does not receive the horizontal laser beam, move the laser component upward and place the positioner on the second support at the position where the horizontal laser beam just reappears.

[0037] S23. Move the laser assembly down again so that the horizontal laser beam irradiates the substrate, and perform the first point calibration and the second point retest respectively;

[0038] S231, First point calibration;

[0039] The first laser component is controlled to emit an inclined laser beam toward the positioning point D1 of the substrate. The laser point received on the second support is marked as A2', and the vertical distance L2' from the laser point A2' to the upper end of the locator is recorded. L1' and L2' are compared. When they are the same, it is determined that the substrate is initially horizontal. Otherwise, the position of the substrate needs to be continuously adjusted until L1' is always equal to L2' after the substrate has rotated at least one revolution. Then, the second point retest in step S232 is performed.

[0040] S232, Second point retest;

[0041] The first laser assembly is controlled to emit an inclined laser beam toward the positioning point D2 of the substrate. The laser point received on the second bracket is marked as A2'', and the vertical distance L2'' from the laser point A2'' to the top of the locator is recorded. L1'' and L2'' are compared. When they are the same, the substrate is judged to be horizontal. Otherwise, the position of the substrate needs to be continuously adjusted until L1'' is always equal to L2'' after the substrate has rotated at least one revolution. At this time, the flatness calibration of the substrate installation is completed.

[0042] By adopting the above technical solution, after a single calibration, the device can be directly placed around the production furnace, allowing for pre-calibration of the flatness of multiple substrates before production. Regardless of the method used, calibration accuracy can be improved to 0.1 degrees. After calibrating the substrates, the level substrates are fed into the growth furnace for liquid phase epitaxy to produce thin films, effectively increasing the number of qualified films. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of the substrate and seed crystal clip.

[0044] Figure 2 This is a front view schematic diagram of the calibration device according to Embodiment 1 of the present invention;

[0045] Figure 3 This is a front view schematic diagram of the substrate during calibration according to Embodiment 1 of the present invention;

[0046] Figure 4 This is a top view schematic diagram of the substrate calibration process in Embodiment 1 of the present invention;

[0047] Figure 5 This is a front view schematic diagram of the device for calibrating positioning point D1 according to Embodiment 2 of the present invention;

[0048] Figure 6 This is a front view schematic diagram of the device for calibrating positioning point D2 according to Embodiment 2 of the present invention;

[0049] Figure 7 This is a partial structural diagram of the device in Embodiment 2 of the present invention during the calibration of the first point of the substrate;

[0050] Figure 8 This is a partial structural diagram of the device in Embodiment 2 of the present invention during substrate second-point calibration;

[0051] Figure 9 This is a top view schematic diagram of the first point calibration of the substrate in Embodiment 2 of the present invention.

[0052] Labeling: Device support 1, first support 11, second support 12, scale line 121, horizontal connector 13, calibration area 14, laser assembly 2, first laser module 21, inclined laser beam 211, second laser module 22, horizontal laser beam 221, positioner 3, substrate 10, seed crystal clamp 20, chuck 201, support 202, growth furnace 30, worktable 40, gap 50. Detailed Implementation

[0053] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the following will clearly and completely describe the technical solutions in the embodiments of this application with reference to the accompanying drawings in the embodiments of this application. Apparently, the described embodiments are some, but not all, of the embodiments of this application. Usually, the components of the embodiments of this application described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0054] Embodiment 1

[0055] As Figures 2 to 4 shown, a device for detecting the flatness of a substrate in this embodiment includes a device support 1, a laser component 2, and a locator 3.

[0056] The device support 1 includes two first supports 11 and second supports 12 that are horizontally spaced apart and vertically extend. The longitudinal sides at the bottoms of the first support 11 and the second support 12 can be connected by a laterally extending lateral connecting member 13 to ensure the horizontal spacing and structural stability of the first support 11 and the second support 12; the device support 1 can be in an "L" shape when viewed from above and is used to surround the periphery of the growth furnace 30. The first support 11 and the second support 12 are respectively used to provide support and fixation for the laser component 2 and the locator 3; a calibration area 14 is formed between the first support 11, the second support 12, and the lateral connecting member 13.

[0057] In this embodiment, the first support 11 and the second support 12 are taken as plate-like structures for example. Of course, they can also be rod-like frame structures, etc.

[0058] The laser component 2 is vertically slidably mounted on the first support 11; the laser component 2 includes a first laser module 21 and a second laser module 22 that are vertically fixedly spaced apart. When the laser component 2 slides up and down, it带动 the first laser module 21 and the second laser module 22 to slide synchronously.

[0059] The first laser module 21 is disposed obliquely downward and can emit an inclined laser ray 211 that forms an angle of 45° or other angles with the horizontal plane towards the calibration area 14. The second laser module 22 is horizontally disposed and can emit a horizontal laser ray 221 towards the direction of the second support 12.

[0060] In this embodiment, the laser component 2 can achieve vertical reciprocating sliding fit with the first support 11 through common mechanical structures such as a slider rail, a screw mechanism, a gear rack mechanism, etc. (not shown in the figure).

[0061] The locator 3 is height-adjustably mounted on the second support 12; in this embodiment, the locator 3 can be detachably fixed to the second support 12 by means such as screw locking or elastic snap connection (not shown in the figure), or it can be directly slidably fitted on the second support 12, as long as the height of the locator 3 is adjustable.

[0062] The second bracket 12 may also be provided with vertically distributed scale lines 121.

[0063] Using the above-described apparatus, before growing rare earth garnet thin films using liquid phase epitaxy, this embodiment can employ the following method to detect and calibrate the flatness of the substrate 10 at the seed crystal clamp 20 position, with a calibration accuracy of up to 0.1 degrees.

[0064] In this embodiment, the first laser module 21 is fixed to the first bracket 11 at a downward angle of 45°, and is used to emit an inclined laser beam 211 with a fixed angle of 45°.

[0065] This embodiment of a substrate calibration method employs a single-point method and includes the following steps:

[0066] S1, Calibration device:

[0067] S11. Find a flat and sturdy workbench 40, place the electronic level on it for leveling, and ensure that the workbench 40 remains level.

[0068] S12. Place the 4-inch substrate 10 (the size of the substrate 10 can be selected according to the needs of the growth operation) on the calibrated workbench 40. Place the device on a horizontal ground and surround the workbench 40 and the substrate 10, so that the substrate 10 is located within the calibration area 14.

[0069] S13. Control the second laser module 22 to emit a horizontal laser beam 221, ensuring that the second support 12 receives the horizontal laser beam 221. Then, move the laser assembly 2 vertically along the first support 11. When the horizontal laser beam 221 hits the substrate 10, the second support 12 does not receive the horizontal laser beam 221. At this point, it can be considered that the second laser module 22 and the substrate 10 are horizontal. Move the laser assembly 2 upwards until the horizontal laser beam 221 emitted by the second laser module 22 just reappears on the second support 12. Then, place and fix the positioner 3 on the second support 12 at the position irradiated by the horizontal laser beam 221.

[0070] S14. Move the laser assembly 2 down again so that the horizontal laser beam 221 irradiates the substrate 10. Then control the first laser module 21 to emit a 45° inclined laser beam 211 towards the substrate 10. The inclined laser beam 211 irradiates any point on the substrate 10, and the laser point reflected from the substrate 10 on the second bracket 12 is marked as A1. Record the vertical distance L1 between the laser point A1 (45° point) and the upper end of the locator 3 according to the scale line 121. At the same time, mark the position of the longitudinal part of the transverse connector 13 corresponding to the transverse ends of the substrate 10. The mark can be divided into the first mark C1 and the second mark C2. Re-measure the distance between the first mark C1 and the second mark C2 to verify whether it is equal to the diameter of the substrate 10.

[0071] S15. Based on the position of laser point A1 on the scale line of the second bracket 12 and the horizontal distance H between the incident point on the substrate 10 and the second bracket, calculate the vertical distance between the laser point and the upper end of the locator when the inclined laser beam is 30° and 60°, and record them as L30 and L60 respectively.

[0072] S2, Calibration Substrate 10:

[0073] S21. Place the 4-inch substrate 10 at the seed crystal clamp 20, place the calibrated device outside the growth furnace 30 and the seed crystal clamp 20, and align the substrate 10 according to the markings on the transverse connector 13 to determine the horizontal transverse placement position of the device. At the same time, select a longitudinal variable distance V between the transverse connector 13 and the substrate 10, and ensure that both the horizontal laser beam 221 and the tilted laser beam 211 can irradiate the substrate 10.

[0074] S22. Control the second laser module 22 to emit a horizontal laser beam 221 and move the laser component 2 vertically. When the horizontal laser beam 221 hits the substrate 10, if the second support 12 does not receive the horizontal laser beam 221, move the laser component 2 upward and place the positioner 3 on the second support 12 at the position where the horizontal laser beam 221 just reappears.

[0075] S23. Move the laser assembly 2 down again so that the horizontal laser beam 221 irradiates the substrate 10. Control the first laser assembly 2 to emit a 45° inclined laser beam 211 towards the substrate 10. Mark the laser point reflected from the substrate 10 on the second support 12 as A2, and record the vertical distance L2 from the laser point A2 to the upper end of the positioner 3. Compare L1 and L2. When they are the same, it is determined that the substrate 10 is horizontal. Otherwise, compare the difference between L2 and L30 or L60, and use this as a reference to quickly fine-tune the position of the substrate 10 until L1 is always equal to L2 after the substrate 10 has rotated more than one revolution.

[0076] S24. By adjusting the longitudinal position of the device, the size of the longitudinal variable distance V is adjusted at least once, and steps S22 and S23 are repeated to finally complete the calibration of the substrate mounting flatness.

[0077] Therefore, after one calibration, the device can be used to calibrate the flatness of multiple subsequent substrates. With 45° as the baseline and 30° and 60° as references, the angle can be precisely quantified and adjusted based on the difference in the corresponding vertical distance, which can effectively improve the fine-tuning efficiency. At the same time, by adjusting the longitudinal distance, multi-point calibration on substrate 10 can be achieved to improve the calibration accuracy, which can reach 0.1 degrees.

[0078] When adjusting the substrate 10, refer to Figure 1 The height of each edge of the substrate 10 can be controlled by independently adjusting the vertical fine-tuning of each claw 201 of the seed crystal clamp 20, or by adjusting the vertical fine-tuning of the support portion 202 of the claw 201. This part can be achieved by modifying the seed crystal clamp 20 by conventional mechanical structure. Those skilled in the art can adjust the settings as needed.

[0079] After calibrating the substrate 10, the horizontal substrate 10 is sent into the growth furnace 30 to produce thin films by liquid phase epitaxy, which can effectively increase the number of qualified films.

[0080] In this embodiment, the calibration method used is the single-point method. In addition, when the substrate calibrated by the visual method is recalibrated and corrected using the calibration device of this embodiment using the single-point method, it is found that the substrate calibrated by the visual method has a deviation of 1.1° from the 45° of the single-point method.

[0081] The yield rates for producing 20 films each using this calibration method and the visual method on 4-inch substrates are shown in the table below:

[0082]

[0083] As shown in the table above, the calibration method of this embodiment can effectively improve the pass rate of thin film production.

[0084] Example 2

[0085] See Figures 5 to 9 The structure of this embodiment is basically the same as that of the above embodiments. The main difference is that the calibration method in this embodiment adopts the two-point method.

[0086] Since the 4-inch substrate 10 itself has positioning points D1 and D2, this embodiment uses the first laser module 21 to irradiate positioning points D1 and D2 respectively and obtain corresponding laser points, thereby replacing the 45° point in Embodiment 1 for substrate 10 calibration.

[0087] Specifically, in this embodiment, the first laser module 21 is mounted on the first bracket 11 and is adjustable for both vertical and horizontal rotation, so as to rotate toward positioning points D1 and D2.

[0088] This embodiment of a substrate calibration method employs a two-point method and includes the following steps:

[0089] S1, Calibration device:

[0090] S11. Find a flat and sturdy workbench 40, place the electronic level on it for leveling, and ensure that the workbench 40 remains level.

[0091] S12. Place the 4-inch substrate 10 on the calibrated workbench 40, place the device on a horizontal ground and surround the workbench 40 and the substrate 10, so that the substrate 10 is located within the calibration area 14.

[0092] S13. Control the second laser module 22 to emit a horizontal laser beam 221. At this time, the second support 12 receives the horizontal laser beam 221. Then, the laser assembly 2 is moved vertically along the first support 11. When the horizontal laser beam 221 shines on the substrate 10, the second support 12 does not receive the horizontal laser beam 221. At this time, it can be considered that the second laser module 22 and the substrate 10 are horizontal. Move the laser assembly 2 upwards so that the horizontal laser beam 221 emitted by the second laser module 22 just reappears on the second support 12. Then, place and fix the positioner 3 on the second support 12 at the position irradiated by the horizontal laser beam 221.

[0093] S14. Move the laser assembly 2 down again so that the horizontal laser beam 221 irradiates the substrate 10;

[0094] Next, the first laser module 21 is controlled to rotate and emit an inclined laser beam 211 toward the positioning point D1 of the substrate 10, and the laser point reflected from the positioning point D1 on the second bracket 12 is marked as A1'. The vertical distance L1' between the laser point A1' and the upper end of the positioner 3 is recorded according to the scale line 121.

[0095] Then, the first laser module 21 is rotated to emit an inclined laser beam 211 toward the positioning point D2 of the substrate 10, and the laser point reflected from the positioning point D2 on the second bracket 12 is marked as A1''. The vertical distance L1'' between the laser point A1'' and the upper end of the positioner 3 is recorded according to the scale line 121.

[0096] Meanwhile, marks are made on the horizontal connector 13 at the positions of the longitudinal positioning points D1 and D2 of the substrate 10, respectively. These marks can be divided into the first mark C1' and the second mark C2', and the minimum longitudinal spacing V' between the horizontal connector 13 and the substrate 10 is recorded.

[0097] S2, Calibration Substrate 10:

[0098] S21. Place the 4-inch substrate 10 at the seed crystal clamp 20, place the calibrated device outside the growth furnace 30 and the seed crystal clamp 20, and align the substrate 10 according to the markings on the transverse connector 13 and the minimum longitudinal spacing V' to determine the horizontal placement position of the device.

[0099] S22. Control the second laser module 22 to emit a horizontal laser beam 221 and move the laser component 2 vertically. When the horizontal laser beam 221 hits the substrate 10, if the second support 12 does not receive the horizontal laser beam 221, move the laser component 2 upward and place the positioner 3 on the second support 12 at the position where the horizontal laser beam 221 just reappears.

[0100] S23. Move the laser assembly 2 down again so that the horizontal laser beam 221 irradiates the substrate 10, and perform the first point calibration and the second point retest respectively.

[0101] S231, First point calibration;

[0102] The first laser component 2 is controlled to emit an inclined laser beam 211 towards the positioning point D1 of the substrate 10. The laser point received on the second support 12 is marked as A2', and the vertical distance L2' from the laser point A2' to the upper end of the positioner 3 is recorded. L1' and L2' are compared. When they are the same, it is determined that the substrate 10 is initially horizontal. Otherwise, the position of the substrate 10 needs to be continuously adjusted until L1' is always equal to L2' after the substrate 10 has rotated two or three times. Then, the second point retest of step S232 is performed.

[0103] S232, Second point retest;

[0104] The first laser component 2 is controlled to emit an inclined laser beam 211 towards the positioning point D2 of the substrate 10. The laser point received on the second bracket 12 is marked as A2'', and the vertical distance L2'' from the laser point A2'' to the upper end of the locator 3 is recorded. L1'' and L2'' are compared. When they are the same, it is determined that the substrate 10 is horizontal. Otherwise, the position of the substrate 10 needs to be continuously adjusted until L1'' is always equal to L2'' after the substrate 10 has rotated two or three times. At this time, the flatness calibration of the substrate 10 is completed, and the calibration accuracy can reach 0.1 degrees.

[0105] Therefore, by calibrating the substrate 10 and then feeding the leveled substrate 10 into the growth furnace 30 for liquid phase epitaxy to produce thin films, the number of qualified films can be effectively increased.

[0106] In this embodiment, the calibration method is a two-point method. For the substrate calibrated by visual method and the substrate calibrated by single-point method in Example 1, the calibration device of this embodiment is used to recalibrate and correct using the two-point method. It is found that the substrate calibrated by visual method has an error of 1.1° with the reference of the two-point method, while the substrate calibrated by single-point method is the same as the reference of the two-point method.

[0107] The yield rates of producing 20 films each using the two-point method, the visual method, and the single-point method on a 4-inch substrate are shown in the table below:

[0108]

[0109] As can be seen from the table above, the two-point calibration method of this embodiment is more convenient to use than the single-point method of Embodiment 1, and there is no need to move the adjustment device relative to the longitudinal position of the growth furnace 30 and the seed crystal clamp 20.

[0110] In addition, this embodiment also uses a two-point method to produce 20 thin films using a 3-inch substrate 10. The yield rate of the 3 / 4-inch substrate is shown in the table below:

[0111]

[0112] In summary, the apparatus and calibration method of the present invention effectively improve the accuracy of calibrating the substrate 10 level and are applicable to the calibration of substrates 10 of 3 / 4 inch size, which can effectively improve the quality of thin film growth, ensure product yield, reduce waste of production materials, save production costs, and enhance market competitiveness.

[0113] The above description is merely a preferred embodiment of the present invention, and the scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, equivalent changes and modifications without departing from the principle of the present invention should still fall within the scope of protection of the present invention.

[0114] In the description of the embodiments of this application, it should be understood that the indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship that the product of this application is usually placed in when in use, or the orientation or positional relationship that is commonly understood by those skilled in the art. It is only for the convenience of describing this application and simplifying the description, and is not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this application.

[0115] Furthermore, the terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" and "several" mean two or more, unless otherwise explicitly specified.

[0116] In the description of the embodiments of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for mutual communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0117] The foregoing disclosure provides many different implementations or examples for carrying out different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described above. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

Claims

1. A substrate calibration method, characterized in that, A device for detecting the flatness of a substrate is used to calibrate the substrate. The device includes a device support, a laser assembly, and a positioner. The device support includes a first support and a second support that are horizontally spaced apart and extend vertically. A transverse connector is connected to the longitudinal side of the bottom of the first support and the second support. A calibration area is formed between the first support, the second support and the transverse connector. The laser assembly can be vertically slidably mounted on the first bracket; the laser assembly includes a first laser module and a second laser module that are fixedly spaced vertically upwards and downwards, and the first laser module and the second laser module slide synchronously when the laser assembly slides up and down; The first laser module is set at an angle downwards and can emit inclined laser beams at a certain angle to the horizontal plane toward the calibration area. The second laser module is set horizontally and can emit horizontal laser beams toward the second support. The locator is mounted on the second bracket at an adjustable height; the second bracket is provided with vertically distributed scale lines. The method includes the following steps: S1, Calibration device: S11. Prepare a horizontal workbench; S12. Place the substrate on a horizontal worktable, place the device on a horizontal ground and surround the worktable and the substrate, so that the substrate is located within the calibration area. S13. Control the second laser module to emit a horizontal laser beam so that the second bracket receives the horizontal laser beam; then move the laser assembly vertically along the first bracket. When the horizontal laser beam hits the substrate and the second bracket does not receive the horizontal laser beam, move the laser assembly upward so that the horizontal laser beam just reappears on the second bracket. Then place and fix the positioner at the position where the horizontal laser beam reappears on the second bracket. S14. Control the laser assembly to move down so that the horizontal laser beam re-irradiates the substrate. Then control the first laser module to emit a 45° inclined laser beam towards the substrate. Mark the laser point reflected from the substrate on the second bracket as A1 and record the vertical distance L1 between the laser point A1 and the upper end of the locator. At the same time, mark the position on the transverse connector corresponding to the transverse ends of the substrate. S15. Based on the position of laser point A1 on the scale line of the second bracket and the horizontal distance H between the incident point on the substrate and the second bracket, calculate the vertical distance between the laser point and the upper end of the locator when the inclined laser beam is 30° and 60°, and record them as L30 and L60 respectively. S2, Calibration substrate: S21. Place the substrate at the seed crystal clamp, place the device calibrated in step S1 outside the growth furnace and the seed crystal clamp, and align the substrate according to the marks on the transverse connector to determine the horizontal transverse placement position of the device. At the same time, select a longitudinal variable distance V between the transverse connector and the substrate, and ensure that both the horizontal laser beam and the tilted laser beam can irradiate the substrate. S22. Control the second laser module to emit a horizontal laser beam and move the laser component vertically. When the horizontal laser beam hits the substrate, if the second support does not receive the horizontal laser beam, move the laser component upward and place the positioner on the second support at the position where the horizontal laser beam just reappears. S23. Move the laser assembly down again so that the horizontal laser beam irradiates the substrate. Control the first laser assembly to emit an inclined laser beam at the same angle as in step S1 onto the substrate. Mark the laser point reflected from the substrate on the second support as A2, and record the vertical distance L2 from the laser point A2 to the top of the positioner. Compare L1 and L2. When they are the same, it is determined that the substrate is horizontal. Otherwise, compare the difference between L2 and L30 or L60, and use this as a reference to quickly fine-tune the position of the substrate until L1 is always equal to L2 after the substrate has rotated at least one revolution. S24. By adjusting the longitudinal position of the device, the size of the longitudinal variable distance V is adjusted at least once, and steps S22 and S23 are repeated to finally complete the calibration of the substrate mounting flatness.

2. The substrate calibration method according to claim 1, characterized in that, The first laser module is fixed to the first bracket at a 45° downward angle.

3. A substrate calibration method, characterized in that, A device for detecting the flatness of a substrate is used to calibrate the substrate. The device includes a device support, a laser assembly, and a positioner. The device support includes a first support and a second support that are horizontally spaced apart and extend vertically. A transverse connector is connected to the longitudinal side of the bottom of the first support and the second support. A calibration area is formed between the first support, the second support and the transverse connector. The laser assembly can be vertically slidably mounted on the first bracket; the laser assembly includes a first laser module and a second laser module that are fixedly spaced vertically upwards and downwards, and the first laser module and the second laser module slide synchronously when the laser assembly slides up and down; The first laser module is set at an angle downwards and can emit inclined laser beams at a certain angle to the horizontal plane toward the calibration area. The second laser module is set horizontally and can emit horizontal laser beams toward the second support. The locator is mounted on the second bracket at an adjustable height; the second bracket is provided with vertically distributed scale lines. The first laser module is mounted on the first bracket and is adjustable for both vertical and horizontal rotation. The method includes the following steps: S1, Calibration device: S11. Prepare a horizontal workbench; S12. Place the substrate on a horizontal worktable, place the device on a horizontal ground and surround the worktable and the substrate, so that the substrate is located within the calibration area. S13. Control the second laser module to emit a horizontal laser beam. At this time, the second support receives the horizontal laser beam. Then, the laser assembly is moved vertically along the first support. When the horizontal laser beam hits the substrate and the second support does not receive the horizontal laser beam, the laser assembly is moved upward so that the horizontal laser beam emitted by the second laser module just reappears on the second support. Then, the positioner is placed and fixed on the second support at the position irradiated by the horizontal laser beam. S14. Move the laser assembly down again so that the horizontal laser beam irradiates the substrate; Next, the first laser module is controlled to rotate and emit an inclined laser beam toward the positioning point D1 of the substrate itself, and the laser point reflected from the positioning point D1 on the second bracket is marked as A1', and the vertical distance L1' between the laser point A1' and the upper end of the positioner is recorded; Then, the first laser module is rotated to emit an inclined laser beam toward the positioning point D2 of the substrate itself, and the laser point reflected from the positioning point D2 on the second bracket is marked as A1'', and the vertical distance L1'' between the laser point A1'' and the upper end of the locator is recorded; Meanwhile, marks are made on the longitudinal positions of the substrate positioning points D1 and D2 on the transverse connector, and the minimum longitudinal spacing V' between the transverse connector and the substrate is recorded. S2, Calibration substrate: S21. Place the substrate at the seed crystal clamp, place the calibrated device outside the growth furnace and the seed crystal clamp, and align the substrate according to the markings on the transverse connector and the minimum longitudinal spacing V' to determine the placement position of the device. S22. Control the second laser module to emit a horizontal laser beam and move the laser component vertically. When the horizontal laser beam hits the substrate, if the second support does not receive the horizontal laser beam, move the laser component upward and place the positioner on the second support at the position where the horizontal laser beam just reappears. S23. Move the laser assembly down again so that the horizontal laser beam irradiates the substrate, and perform the first point calibration and the second point retest respectively; S231, First point calibration; The first laser component is controlled to emit an inclined laser beam toward the positioning point D1 of the substrate. The laser point received on the second support is marked as A2', and the vertical distance L2' from the laser point A2' to the upper end of the locator is recorded. L1' and L2' are compared. When they are the same, it is determined that the substrate is initially horizontal. Otherwise, the position of the substrate needs to be continuously adjusted until L1' is always equal to L2' after the substrate has rotated at least one revolution. Then, the second point retest in step S232 is performed. S232, Second point retest; The first laser assembly is controlled to emit an inclined laser beam toward the positioning point D2 of the substrate. The laser point received on the second bracket is marked as A2'', and the vertical distance L2'' from the laser point A2'' to the top of the locator is recorded. L1'' and L2'' are compared. When they are the same, the substrate is judged to be horizontal. Otherwise, the position of the substrate needs to be continuously adjusted until L1'' is always equal to L2'' after the substrate has rotated at least one revolution. At this time, the flatness calibration of the substrate installation is completed.

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