Heat conduction simulation experiment method of probe card, electronic equipment and storage medium

Abstract

The invention discloses a heat conduction simulation experiment method of a probe card, electronic equipment and a storage medium. The method comprises the following steps: acquiring a simulation model; acquiring actual temperature data of the probe card and heat conduction coefficient data of the probe card; and based on the simulation model, the actual temperature data and the heat conduction coefficient data, performing a heat conduction simulation experiment including the first heat transfer mode and the second heat transfer mode to obtain temperature field data. A heat conduction simulation experiment including a first heat transfer mode and a second heat transfer mode is performed based on a simulation model, actual temperature data and heat conduction coefficient data to obtain temperature field data, the first heat transfer mode is a heat transfer mode in which a probe card model is in direct contact with a probe station model, and the second heat transfer mode is a heat transfer mode in which a probe card model is in direct contact with a probe station model. The second heat transfer mode is a mode that the simulation heat source indirectly transfers heat to the probe card model through the simulation chamber, so that a scene of a heat conduction simulation experiment is closer to an actual test scene, and the accuracy of temperature field data is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of probe card, and particularly relates to a thermal conduction simulation experiment method of probe card, an electronic device and a storage medium. BACKGROUND

[0002] The probe card is a core component in the testing process of a semiconductor wafer, and undertakes the key task of signal transmission and electrical performance detection between the testing equipment and the wafer chip. The performance stability of the probe card directly determines the accuracy and testing efficiency of the wafer test result. In the actual testing process, the probe card will be deformed due to heat, thereby affecting the test result. Therefore, in the design process of the probe card, the thermal conduction simulation experiment needs to be performed on the probe card to determine the temperature field data of the probe card under heat, and to optimize the structure design of the probe card.

[0003] In the prior art, the thermal conduction simulation experiment is generally performed by directly heating the probe card model by using a simulated heat source.

[0004] However, in the actual testing process, the probe card model does not completely fit the heat source, which leads to inaccurate temperature field data obtained by the thermal conduction simulation experiment. SUMMARY

[0005] In view of the problems in the prior art, the present application provides a thermal conduction simulation experiment method of probe card, an electronic device and a storage medium. The thermal conduction simulation experiment method includes a first heat transfer mode and a second heat transfer mode, and the temperature field data is obtained by performing the thermal conduction simulation experiment based on the simulation model, the actual temperature data and the thermal conduction coefficient data. The first heat transfer mode is a heat transfer mode in which the probe card model directly contacts the probe station model, and the second heat transfer mode is a mode in which the simulated heat source indirectly transfers heat to the probe card model through the simulated chamber. The scene of the thermal conduction simulation experiment is closer to the actual testing scene, thereby improving the accuracy of the temperature field data.

[0006] To solve the above problems, the present application provides the following technical solutions: In a first aspect, the present application provides a thermal conduction simulation experiment method of probe card, including: obtaining a simulation model, the simulation model including a probe card model and a probe station model, the probe card model being assembled with the probe station model and forming a simulated chamber between the probe card model and the probe station model, the probe station model including a simulated heat source opposite to the probe card model; obtaining actual temperature data of the probe card and thermal conduction coefficient data of the probe card; perform a heat conduction simulation experiment including a first heat transfer mode and a second heat transfer mode based on the simulation model, the actual temperature data and the heat conduction coefficient data, to obtain temperature field data, wherein the first heat transfer mode is a heat transfer mode in which the probe card model is in direct contact with the probe station model, and the second heat transfer mode is a mode in which the simulated heat source indirectly transfers heat to the probe card model through the simulated chamber.

[0007] In a second aspect, an embodiment of the present application provides an electronic device, which comprises: at least one processor; and a memory in communication connection with the at least one processor; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the heat conduction simulation experiment method of the probe card according to the first aspect.

[0008] In a third aspect, an embodiment of the present application provides a computer readable storage medium, which stores an executable program, and the executable program is executed by a processor to implement the heat conduction simulation experiment method of the probe card according to the first aspect.

[0009] The present application provides a heat conduction simulation experiment method of a probe card, an electronic device and a storage medium. The present application performs a heat conduction simulation experiment including a first heat transfer mode and a second heat transfer mode based on a simulation model, actual temperature data and heat conduction coefficient data to obtain temperature field data, wherein the first heat transfer mode is a heat transfer mode in which a probe card model is in direct contact with a probe station model, and the second heat transfer mode is a mode in which a simulated heat source indirectly transfers heat to the probe card model through a simulated chamber. The scene of the heat conduction simulation experiment is closer to the actual test scene, thereby improving the accuracy of the temperature field data. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a flowchart of the heat conduction simulation experiment method of the probe card provided by an embodiment of the present application.

[0011] Figure 2 is a top view structural schematic diagram of the simulation model provided by an embodiment of the present application.

[0012] Figure 3 is a sectional view of the first embodiment of the simulation model at section line A-A in Figure 2 .

[0013] Figure 4 is an exploded schematic diagram of the first embodiment of the simulation model provided by an embodiment of the present application.

[0014] Figure 5is a cross-sectional view of the second embodiment of the simulation model in Figure 2 is a cross-sectional view of the second embodiment of the simulation model in

[0015] Figure 6A is a temperature field distribution result diagram of a side of the mechanical reinforcement model far from the wafer model in a thermal conduction simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0016] Figure 6B is a temperature field distribution result diagram of a side of the mechanical reinforcement model close to the wafer model in a thermal conduction simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0017] Figure 6C is a temperature field distribution result diagram of a side of the circuit board model far from the wafer model in a thermal conduction simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0018] Figure 6D is a temperature field distribution result diagram of a side of the circuit board model close to the wafer model in a thermal conduction simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0019] Figure 7A is a stress distribution result diagram of a side of the circuit board model far from the wafer model in a mechanical simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0020] Figure 7B is a stress distribution result diagram of a side of the circuit board model close to the wafer model in a mechanical simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0021] Figure 7C is a deformation amount distribution result diagram of a side of the mechanical reinforcement model far from the wafer model in a mechanical simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0022] Figure 7D is a deformation amount distribution result diagram of a side of the mechanical reinforcement model close to the wafer model in a mechanical simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0023] Figure 7E is a cross-sectional view of the mechanical reinforcement model in a mechanical simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0024] Figure 7F is a deformation amount distribution result diagram of a side of the circuit board model far from the wafer model in a mechanical simulation experiment of a probe card implemented by the simulation model provided by the embodiment of the present application.

[0025] Figure 7G is a distribution result picture of a deformation variable of a one side of a wafer model in a mechanical simulation experiment of a probe card implemented by using the simulation model provided in the embodiments of the present application.

[0026] Figure 7H is a sectional view of a circuit board model in a mechanical simulation experiment of a probe card implemented by using the simulation model provided in the embodiments of the present application.

[0027] Figure 8 is a structural schematic diagram of an electronic device provided in the embodiments of the present application.

[0028] Figure 9 is a structural block diagram of a computer readable storage medium provided in the embodiments of the present application. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0030] In addition, the terms "first", "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0031] The present application provides a thermal conduction simulation experiment method of a probe card, an electronic device and a storage medium. The thermal conduction simulation experiment method of the present application includes a first heat transfer mode and a second heat transfer mode based on a simulation model, actual temperature data and thermal conduction coefficient data, and obtains temperature field data. The first heat transfer mode is a direct contact heat transfer mode between a probe card model and a probe station model, and the second heat transfer mode is a mode of indirect heat transfer from a simulated heat source to the probe card model through a simulated chamber. The scene of the thermal conduction simulation experiment is closer to the actual test scene, thereby improving the accuracy of the temperature field data.

[0032] The thermal conduction simulation experiment method of the probe card of the present application is used for designing or simulating a test probe card, and is applied in the field of probe card testing, wafer testing or probe testing. The probe card belongs to a quantity detection device.

[0033] The thermal conduction simulation experiment method of the probe card provided in the present application will be described in detail below with reference to the drawings.

[0034] Please refer toFigure 1 , Figure 1 FIG. 1 is a flowchart of a method for thermal conduction simulation experiment of a probe card according to an embodiment of the present application. As shown in FIG. 1, the method for thermal conduction simulation experiment of the probe card includes steps S100-S300. Figure 1

[0035] Step S100: Obtain a simulation model.

[0036] The simulation model includes a probe card model and a probe station model, the probe card model and the probe station model are assembled and form a simulation chamber therebetween, and the probe station model includes a simulated heat source opposite to the probe card model.

[0037] Optionally, the simulated heat source is a test chuck model. The test chuck is a device for testing the probe card.

[0038] In some embodiments, the probe card model includes a plurality of component models. The plurality of component models include a mechanical stiffener model, a circuit board model, a substrate model, and a probe model. The assembly sequence of the plurality of component models is the mechanical stiffener model, the circuit board model, the substrate model, and the probe model in sequence. The probe station model further includes a wafer model, and the wafer model is located above the simulated heat source. The probe model directly contacts the wafer model.

[0039] Step S200: Obtain actual temperature data of the probe card and thermal conduction coefficient data of the probe card.

[0040] The actual temperature data of the probe card is data obtained by temperature detection of the probe card in an actual test process.

[0041] Optionally, the probe card includes a plurality of components. The plurality of components include a mechanical stiffener, a circuit board, a substrate, and a probe. The thermal conduction coefficient data includes thermal conduction coefficients of each component of the probe card.

[0042] Step S300: Perform thermal conduction simulation experiment including a first heat transfer mode and a second heat transfer mode based on the simulation model, the actual temperature data, and the thermal conduction coefficient data, to obtain temperature field data.

[0043] The first heat transfer mode is a heat transfer mode in which the probe card model directly contacts the probe station model. The second heat transfer mode is a mode in which the simulated heat source indirectly transfers heat to the probe card model through the simulation chamber.

[0044] In some embodiments, step S300 includes steps S310-S320.

[0045] Step S310: Determine a steady-state temperature in the actual temperature data as a boundary condition in the thermal conduction simulation experiment.

[0046] ​The steady-state temperature refers to a state in which the temperature distribution of each point in the object no longer changes with time, and the stable temperature after dynamic equilibrium is reached.

[0047] In some embodiments, during the actual test, the probe card is assembled with the probe station and forms a chamber, and the temperature detected in the chamber is the experimental temperature. At one experimental temperature, the temperature of each component of the probe card is detected to obtain the steady-state temperature of each component of the probe card.

[0048] Step S320: Based on the actual temperature data and the simulation model, a heat conduction simulation experiment including the first heat transfer mode and the second heat transfer mode is performed to obtain the temperature field data under the boundary condition.

[0049] In some embodiments, in the finite element analysis software, the actual temperature data is imported into the thermal simulation calculation model, and based on the actual temperature data and the simulation model, a heat conduction simulation experiment including the first heat transfer mode and the second heat transfer mode is performed using the thermal simulation calculation model to obtain the temperature field data under the boundary condition.

[0050] In some embodiments, the heat transfer sequence in the first heat transfer mode is the simulated heat source, the wafer model, the probe model, the substrate model, the circuit board model, and the mechanical reinforcement model.

[0051] In some embodiments, the heat transfer sequence in the second heat transfer mode is the simulated heat source, the wafer model, the simulated chamber, the probe model, the substrate model, the circuit board model, and the mechanical reinforcement model.

[0052] Optionally, in the thermal simulation calculation model, the calculation is performed based on the first heat transfer mode and the second heat transfer mode at the same time to obtain the temperature field data.

[0053] In some embodiments, the probe card includes a mechanical reinforcement and a circuit board, and the heat conduction simulation experiment method of the probe card further includes steps S410 to S420.

[0054] Step S410: During the test of the probe card, the temperatures of multiple points on the surface of the mechanical reinforcement of the probe card are detected to obtain a plurality of first detection temperatures, and the temperatures of multiple points on the surface of the circuit board are detected to obtain a plurality of second detection temperatures.

[0055] In some embodiments, during the test of the probe card, when the temperature detected by the first detection temperature detection device of the probe station assembled with the probe card is the experimental temperature, the second detection temperature detection device is controlled to detect the temperatures of multiple points on the surface of the mechanical reinforcement of the probe card during the test of the probe card to obtain a plurality of first detection temperatures, and to detect the temperatures of multiple points on the surface of the circuit board to obtain a plurality of second detection temperatures.

[0056] The first detection temperature detection device of the probe station is configured to detect the temperature in the chamber.

[0057] Step S420: determining actual temperature data of the probe card based on all the first detection temperatures and all the second detection temperatures.

[0058] In some embodiments, step S420 comprises steps S421-S422.

[0059] Step S421: determining an average value of all the first detection temperatures as a steady state temperature of the mechanical reinforcement in the actual temperature data.

[0060] Step S422: determining an average value of all the second detection temperatures as a steady state temperature of the circuit board in the actual temperature data, thereby obtaining the actual temperature data.

[0061] In this way, the steady state temperatures in the actual temperature data are calculated based on real detection temperatures, which can improve the accuracy of the temperature field data.

[0062] In some embodiments, after step S300, the method further comprises steps S510-S540 for implementing a mechanical simulation experiment of the probe card.

[0063] Step S510: obtaining and calculating an equivalent modulus of the circuit board based on the number of conductor layers of the circuit board, the thickness of each conductor layer, the number of dielectric layers and the thickness of each dielectric layer.

[0064] In the prior art, a probe card comprises a circuit board and probes, and the mechanical simulation result data of each probe is generally calculated based on the elastic modulus of each probe. However, the calculation amount of the prior art is huge. The inventors have found that the material of the probes is metal, the material of the circuit board is a flame-resistant resin material (such as FR-4 grade material), and the deformation amount of the circuit board is much larger than that of the probes during the heating of the probe card, and the deformation of the circuit board is the main factor affecting the flatness change of the probes. Therefore, in order to reduce the calculation amount, the deformation amount of the probes can not be calculated, but only the deformation amount of the circuit board is calculated, and this does not affect the accuracy of the calculation.

[0065] In some embodiments, the circuit board is formed by alternately stacking multiple conductor layers and dielectric layers, and the conductor layers form a circuit network on the dielectric layers. In order to simplify the calculation, the accurate modulus of the circuit board can not be calculated, but the equivalent modulus of the circuit board is calculated, and the equivalent modulus is used to represent the mechanical properties of the circuit board. In this way, the calculation amount can be reduced, the calculation efficiency can be improved, and the accuracy of the calculation is not affected.

[0066] Optionally, the material of the conductor layer is copper, gold or silver, etc.

[0067] Optionally, the medium layer is a flame-resistant resin material, such as FR-4 grade material.

[0068] By acquiring the number of conductor layers of the circuit board of the probe card, the thickness of each conductor layer, the number of medium layers, and the thickness of each medium layer, and calculating the equivalent modulus of the circuit board based on the number of conductor layers of the circuit board, the thickness of each conductor layer, the number of medium layers, and the thickness of each medium layer, the mechanical simulation result data of the simulation model under the constraint of the boundary condition and the temperature field data is calculated based on the simulation model, the equivalent modulus, the material parameters, the boundary condition, and the temperature field data, the equivalent modulus can be used to represent the mechanical properties of the circuit board, and the mechanical simulation result data of each probe does not need to be calculated, thereby greatly reducing the calculation amount and improving the calculation efficiency.

[0069] In some embodiments, the step S510 includes steps S511-S515.

[0070] Step S511: Acquire the number of conductor layers of the circuit board of the probe card, the thickness of each conductor layer, the number of medium layers, and the thickness of each medium layer.

[0071] Step S512: Calculate the first volume ratio of the conductor layer and the second volume ratio of the medium layer of the circuit board based on the number of conductor layers, the thickness of each conductor layer, the number of medium layers, and the thickness of each medium layer.

[0072] In some embodiments, the step S512 includes steps S5121-S5122.

[0073] Step S5121: Calculate the total thickness of the circuit board of the probe card based on the number of conductor layers, the thickness of each conductor layer, the number of medium layers, and the thickness of each medium layer.

[0074] In some embodiments, the calculation formula of the total thickness of the circuit board of the probe card is: , Wherein, T represents the total thickness of the circuit board of the probe card, N represents the number of conductor layers, t represents the thickness of each conductor layer, M represents the number of medium layers, h represents the thickness of each medium layer.

[0075] In some embodiments, the circuit network is relatively complex, in order to improve the calculation accuracy, a preset conductor layer coverage rate can be acquired, and the total thickness of the circuit board of the probe card is calculated based on the conductor layer coverage rate, the number of conductor layers, the thickness of each conductor layer, the number of medium layers, and the thickness of each medium layer.

[0076] , Wherein, This indicates the coverage of the conductor layer.

[0077] In this way, the mechanical simulation experiment method of the probe card can achieve high calculation accuracy for different stacking designs and wiring schemes of the circuit board.

[0078] Step S5122: Calculate the first volume percentage of the conductor layer based on the total thickness of the circuit board, the number of conductor layers, and the thickness of each conductor layer, and calculate the second volume percentage of the dielectric layer based on the first volume percentage of the conductor layer.

[0079] In some implementations, the formula for calculating the first volume percentage is: ,in, This indicates the percentage of the first volume.

[0080] In some implementations, the formula for calculating the second volume percentage is: ,in, This indicates the percentage of the second volume.

[0081] Step S513: Obtain the first elastic modulus of the conductor layer and the second elastic modulus of the dielectric layer.

[0082] The first elastic modulus represents the unit strain produced by the conductor layer under unit stress during the elastic deformation stage at the first temperature. The second elastic modulus represents the unit strain produced by the dielectric layer under unit stress during the elastic deformation stage at the second temperature.

[0083] In some implementations, during actual testing, the probe card and probe station are assembled to form a chamber, and the temperature detected within the chamber is the experimental temperature. In the simulation model, the probe card model and probe station model are assembled to form a simulated chamber. The first temperature refers to the temperature of the conductor layer of the circuit board model in the temperature field data obtained through a heat conduction simulation experiment when the temperature of the simulated chamber is the preset experimental temperature. The second temperature refers to the temperature of the dielectric layer of the circuit board model in the temperature field data obtained through a heat conduction simulation experiment when the temperature of the simulated chamber is the preset experimental temperature.

[0084] In some implementations, the method further includes steps S610 to S620.

[0085] Step S610: Obtain the first temperature, the standard temperature, the first temperature coefficient of the conductor material of the conductor layer, and the first reference elastic modulus of the conductor material at the standard temperature.

[0086] The first temperature is the temperature of the conductor layer of the circuit board model in the temperature field data.

[0087] Optionally, step S610 is located before step S520. In step S610, temperature field data is acquired first, and a first temperature is determined based on the temperature field data. In step S520, the acquired temperature field data can be directly retrieved.

[0088] Step S620: Calculate the first elastic modulus based on the first temperature, standard temperature, first temperature coefficient, and first reference elastic modulus.

[0089] In some implementations, the formula for calculating the first elastic modulus is: , in, Indicates the first elastic modulus. Indicates the first reference elastic modulus. Indicates the first temperature coefficient. Indicates the first temperature. Indicates the standard temperature.

[0090] For example, the first temperature is 100 degrees Celsius (°C), 150°C, or 200°C, etc.

[0091] For example, the standard temperature is 20°C or 25°C, etc.

[0092] In some implementations, the method further includes steps S710 to S720.

[0093] Step S710: Obtain the second temperature, the standard temperature, the second temperature coefficient of the dielectric material of the dielectric layer, and the second reference elastic modulus of the dielectric material at the standard temperature.

[0094] The second temperature is the temperature of the dielectric layer of the circuit board model in the temperature field data.

[0095] Optionally, the second temperature is the same as the first temperature.

[0096] Optionally, the second temperature is different from the first temperature.

[0097] Optionally, step S710 is located before step S520. In step S710, temperature field data is acquired first, and a second temperature is determined based on the temperature field data. In step S520, the acquired temperature field data can be directly retrieved.

[0098] Step S720: Calculate the second elastic modulus based on the second temperature, standard temperature, second temperature coefficient, and second reference elastic modulus.

[0099] In some implementations, the formula for calculating the second elastic modulus is: , in, Indicates the second elastic modulus. This represents the second reference elastic modulus. Indicates the second temperature coefficient. Indicates the second temperature. Indicates the standard temperature.

[0100] The calculation methods for the first and second elastic moduli described above have been simplified compared to existing technologies. This approach further reduces the computational load and improves computational efficiency.

[0101] In some embodiments, the elastic modulus of the dielectric material changes significantly near a temperature at which the elastic modulus changes abruptly. In this case, step S720 includes steps S721 to S723.

[0102] Step S721: Obtain the temperature at which the elastic modulus of the medium material changes abruptly.

[0103] For example, the temperature at which the elastic modulus changes abruptly is 130°C.

[0104] Step S722: When the second temperature is higher than the temperature at which the elastic modulus changes abruptly, obtain the high-temperature correction calculation coefficient for the medium material.

[0105] Step S723: Calculate the second elastic modulus based on the second temperature, standard temperature, second temperature coefficient, high temperature correction calculation coefficient, and second reference elastic modulus.

[0106] In some implementations, the formula for calculating the second elastic modulus is: , in, This represents the high-temperature correction factor for the dielectric material.

[0107] In some implementations, the high-temperature correction factor for the medium material is related to the experimental temperature. The high-temperature correction factor can be calculated based on the experimental temperature and a preset formula for calculating the high-temperature correction factor.

[0108] In some implementations, when the experimental temperature is greater than or equal to the temperature at which the elastic modulus changes abruptly, The value is less than 1.

[0109] By using high-temperature correction coefficients to calculate the second elastic modulus, the calculation accuracy of the second elastic modulus can be improved, thereby improving the accuracy of the mechanical simulation results.

[0110] Step S514: Calculate the first equivalent modulus of the probe card in the first direction based on the first volume ratio, the second volume ratio, the first elastic modulus, and the second elastic modulus using a preset first calculation method.

[0111] The first direction refers to the direction within the first plane where the probe card's circuit board is located. The first plane where the probe card's circuit board is located refers to the plane containing the upper surface of the circuit board covered with a conductor layer.

[0112] In some implementations, the first equivalent modulus is obtained by adding the product of the first volume percentage and the first elastic modulus to the product of the second volume percentage and the second elastic modulus. In this case, the formula for calculating the first equivalent modulus is: , in, This represents the first equivalent modulus.

[0113] Step S515: Calculate the second equivalent modulus of the probe card in the second direction based on the first volume ratio, the second volume ratio, the first elastic modulus, and the second elastic modulus using a preset second calculation method.

[0114] The second direction is the direction perpendicular to the first plane.

[0115] In some implementations, the reciprocal of the sum of the quotient of the first volume percentage divided by the first elastic modulus and the quotient of the second volume percentage divided by the second equivalent modulus is determined as the second equivalent modulus. In this case, the formula for calculating the second equivalent modulus is: , in, This represents the second equivalent modulus.

[0116] Step S520: Obtain simulation model, material parameters, and temperature field data.

[0117] In some implementations, the simulation model includes a probe card model and a probe station model, which are assembled together. The probe card model includes multiple component models. For example, the probe card model includes a mechanical reinforcement model and a circuit board model, which are assembled together. Multiple material parameters are included. These material parameters may include the model's coefficient of thermal expansion and other material performance parameters.

[0118] Optionally, the temperature field data is steady-state temperature distribution field data, which is a collection of temperatures of the simulation model at various locations.

[0119] In some implementations, the probe station model includes a simulated heat source, and one set of temperature field data corresponds to an experimental temperature of the simulated heat source.

[0120] In some implementations, temperature field data at multiple different experimental temperatures can be acquired, and other steps in this method can be performed based on each set of temperature field data to conduct multiple mechanical simulation experiments and obtain mechanical simulation results data at different experimental temperatures.

[0121] Optionally, at least one experimental temperature can be selected from each of the multiple experimental temperature ranges to obtain multiple different experimental temperatures. The multiple experimental temperature ranges may include a low temperature range, a normal temperature range, and a high temperature range.

[0122] For example, the experimental temperature is -40°C, 25°C, or 125°C, etc.

[0123] In some implementations, after step S520, the method further includes: performing mesh refinement processing on the specified component model in the probe card model. This improves the accuracy of the mechanical simulation results data and ensures that temperature gradients and stress distributions are captured.

[0124] Optionally, one or more component models can be specified.

[0125] In some implementations, the probe card model further includes a probe model, and multiple designated component models include the probe model and the mechanical reinforcement model. In this case, the mechanical simulation results of the circuit board model and the mechanical reinforcement model are calculated only based on the influence relationship between the probe model and the circuit board model and the mechanical reinforcement model, without needing to calculate the mechanical simulation results for each probe.

[0126] Step S530: Determine boundary conditions based on the simulation model.

[0127] Boundary conditions refer to the physical constraints imposed on the simulation model.

[0128] At this time, step S530 includes steps S531 to S533.

[0129] Step S531: Determine the rigid boundary conditions based on the installation structure region in the probe card model.

[0130] Optionally, the mounting structure area includes the fastener mounting area and / or support structure area in the mechanical reinforcement model.

[0131] Step S532: Determine the boundary conditions between the mechanical reinforcement model and the circuit board model as assembly contact boundary conditions.

[0132] Step S533: Determine the boundary conditions between the probe card model and the probe station model as assembly contact boundary conditions.

[0133] By determining the assembly contact boundary conditions, it is possible to simulate the friction and thermal expansion between models, thereby improving the accuracy of the mechanical simulation results.

[0134] In some implementations, the probe station model is also defined as a rigid body to eliminate the influence of the probe station model on the mechanical simulation of the probe card model.

[0135] In some implementations, each adjacent component model in the probe card model is contact-bonded to simulate the screw tightening effect in an actual test scenario.

[0136] Step S540: Calculate the mechanical simulation results of the simulation model under the constraints of the boundary conditions and temperature field data based on the simulation model, equivalent modulus, material parameters, boundary conditions and temperature field data.

[0137] In some implementations, temperature field data is imported as a load into the mechanical simulation model in finite element analysis software. The mechanical simulation model is then used to conduct simulation experiments on the model based on material parameters, equivalent modulus, and boundary conditions to obtain mechanical simulation results. Specifically, only the mechanical simulation results of the probe card model are calculated; the mechanical simulation results of the probe station model are not required.

[0138] In some implementations, the mechanical simulation results data include deformation distribution data and stress field data for each component model of the probe card model.

[0139] Optionally, a stress contour map can be generated based on the stress field data. The stress contour map is used to visually represent the stress index values ​​and distribution at various points on the probe card model.

[0140] Optionally, a deformation cloud map is generated based on the deformation distribution data. The deformation cloud map is used to visually represent the deformation index values ​​and distribution at various points in the probe card model.

[0141] Optionally, probe flatness can be calculated based on deformation distribution data from the circuit board model.

[0142] Optionally, the stress field data includes equivalent stress (von Mises stress) field data and first principal stress field data. The equivalent stress field is used to represent the combined stress of the model under multiaxial stress conditions. The first principal stress field is used to represent the maximum principal stress of the model.

[0143] In some embodiments, after step S540, the method further includes steps S810 to S840, which are used to perform mechanical simulation result data analysis of the probe card model.

[0144] Step S810: Obtain the mechanical simulation results data of the probe card model.

[0145] The mechanical simulation results were obtained using the probe card mechanical simulation experiment method described above. The mechanical simulation results include numerical values ​​of the mechanical simulation results at various points on the probe card model.

[0146] Optionally, the mechanical simulation results can be multiple, including deformation index values ​​and stress index values.

[0147] In some implementations, the mechanical simulation results data include deformation distribution data and stress field data for each component model of the probe card model.

[0148] Optionally, the mechanical simulation results data also include stress contour plots and deformation contour plots.

[0149] Step S820: Determine the stress concentration area of ​​the probe card model based on the mechanical simulation results data.

[0150] In some implementations, the probe card model includes multiple component models. For example, the probe card model includes a mechanical reinforcement model and a circuit board model, with the mechanical reinforcement model assembled with the circuit board model.

[0151] Optionally, the stress concentration areas of the mechanical reinforcement model and the circuit board model in the probe card model can be determined based on the mechanical simulation results data.

[0152] Optionally, stress concentration areas where the deformation index value is greater than a preset deformation threshold can be determined based on the deformation distribution data in the mechanical simulation results.

[0153] Optionally, stress concentration regions where the stress index value is greater than a preset stress threshold can be determined based on the stress field data in the mechanical simulation results.

[0154] In some implementations, the stress field data includes first principal stress field data and equivalent stress field data.

[0155] In some implementations, the stress concentration region of the probe card model is determined based on the first principal stress field data and equivalent stress field data in the mechanical simulation results.

[0156] Optionally, a first stress concentration region with a first principal stress index value greater than a preset stress threshold is determined based on the first principal stress field data, and a second stress concentration region with an equivalent stress index value greater than a preset stress threshold is determined based on the equivalent stress field data.

[0157] Step S830: Determine whether the probe card model needs optimization based on the mechanical simulation results of the stress concentration region, the target component model in the probe card model where the stress concentration region is located, and the standard values ​​corresponding to the mechanical simulation results of the preset target component model.

[0158] The probe card model includes multiple component models, and the target component model is one of the multiple component models.

[0159] By using the mechanical simulation results of stress concentration areas, the target component model in the probe card model where the stress concentration areas are located, and the standard values ​​corresponding to the mechanical simulation results of the preset target component model, it is determined whether the probe card model needs optimization. When it is determined that the probe card model needs optimization, optimization suggestions are determined based on the type of the target component model. This can greatly reduce the dependence of data analysis methods on manual work, improve optimization efficiency, and also improve optimization results.

[0160] Optionally, the multiple component models include a mechanical reinforcement model, a circuit board model, a substrate model, and a probe model. The assembly order of the multiple component models is as follows: mechanical reinforcement model, circuit board model, substrate model, and probe model.

[0161] Optionally, the mechanical simulation results for the stress concentration region can be at least one numerical value.

[0162] Optionally, at least one mechanical simulation result value includes deformation index values ​​and / or stress index values ​​from the mechanical simulation result data. The mechanical simulation result data includes multiple mechanical simulation result values ​​at various locations within the stress concentration region.

[0163] In some implementations, the standard value corresponds to both the type of the target component model and the type of the mechanical simulation result value. That is, the type of a target component model and the type of a mechanical simulation result value together determine a corresponding standard value.

[0164] In some implementations, the standard value is either a safe operating value or a maximum value. The safe operating value refers to the maximum mechanical simulation result value that allows the actual first component to operate safely and continuously. The maximum value refers to the maximum mechanical simulation result value that the first component can withstand in a short period. The safe operating value is less than the maximum value.

[0165] In some implementations, if at least one stress index value in the stress concentration region is higher than the corresponding standard value, the probe card model is determined to need optimization; otherwise, the probe card model is determined not to need optimization.

[0166] For example, when the mechanical simulation result is a stress index value and the standard value is a safe working stress index value, if there is a stress index value of 600 MPa in the probe card model, while the safe working stress index value is 500 MPa, then even if the stress index value does not exceed the maximum stress index value, the probe card model is still judged to need optimization. In this way, the optimization effect of probe card design can be improved.

[0167] In some implementations, when at least one of the first principal stress values ​​in the stress concentration region is higher than the corresponding standard value, and / or one of the equivalent stress values ​​is higher than the corresponding standard value, the probe card model is determined to need optimization; otherwise, the probe card model is determined not to need optimization.

[0168] In some implementations, if at least one deformation index value in the stress concentration region is higher than the corresponding standard value, it is determined that the probe card model needs to be optimized; otherwise, it is determined that the probe card model does not need to be optimized.

[0169] Optionally, the standard value corresponding to the deformation index value can be the tip flatness, which is used to represent the flatness of the probe tip of the probe card.

[0170] For example, when there is at least one deformation index value of 0.8453 mm in the stress concentration area and the standard value of the needle tip flatness is 0.5 mm, it is determined that the probe card model needs to be optimized.

[0171] In some implementations, if there is at least one stress index value in the stress concentration region that is higher than the corresponding standard value, and there is at least one deformation index value that is higher than the corresponding standard value, it is determined that the probe card model needs to be optimized; otherwise, it is determined that the probe card model does not need to be optimized.

[0172] Step S840: When it is determined that the probe card model needs optimization, optimization suggestions are determined based on the type of the target component model.

[0173] In some implementations, when the probe card model needs optimization based on the stress index value, and the target component model is a mechanical reinforcement model, the optimization recommendations include at least one of adding fillets to the stress concentration area, increasing the number of reinforcing ribs in the mechanical reinforcement model, and increasing the thickness of the mechanical reinforcement model.

[0174] Specifically, in step S830, when at least one stress index value in the stress concentration region is higher than the corresponding standard value, it is determined that the probe card model needs optimization. In this case, in step S840, the optimization suggestions are determined to include at least one of the following: adding fillets to the stress concentration region, increasing the number of reinforcing ribs in the mechanical reinforcement model, and increasing the thickness of the mechanical reinforcement model.

[0175] In some implementations, when the probe card model needs optimization based on the deformation index value, and the target component model is a mechanical reinforcement model, the optimization suggestions include at least one of increasing the thickness of the mechanical reinforcement model, selecting a material with a higher elastic modulus than the current material of the mechanical reinforcement model, and adding a symmetrical support structure to the mechanical reinforcement model.

[0176] Specifically, in step S830, when at least one deformation index value in the stress concentration region is higher than the corresponding standard value, it is determined that the probe card model needs optimization. At this time, in step S840, the optimization suggestions include at least one of the following: increasing the thickness of the mechanical reinforcement model, selecting a material with a higher elastic modulus than the current material of the mechanical reinforcement model, and adding a symmetrical support structure to the mechanical reinforcement model.

[0177] In some implementations, when the probe card model is determined to require optimization based on deformation and stress index values, and the target component model is a mechanical reinforcement model, the optimization suggestions include at least one of the following: selecting a material with a lower coefficient of thermal expansion than the current material of the circuit board model in the probe card model; selecting a material with a higher elastic modulus than the current material of the circuit board model; or changing the assembly preload of the mechanical reinforcement model and the circuit board model in the probe card model. This approach provides comprehensive optimization suggestions and improves the optimization effect.

[0178] Specifically, in step S830, when at least one stress index value in the stress concentration region is higher than the corresponding standard value, and at least one deformation index value is higher than the corresponding standard value, it is determined that the probe card model needs optimization. In this case, in step S840, the optimization suggestions include at least one of the following: selecting a material with a lower coefficient of thermal expansion than the current material of the circuit board model in the probe card model; selecting a material with a higher elastic modulus than the current material of the circuit board model; and changing the assembly preload of the mechanical reinforcement model and the circuit board model in the probe card model.

[0179] In some implementations, when it is determined that the probe card model needs optimization and the target component model is a circuit board model, the optimization suggestions include... In some implementations, step S840 includes: when it is determined that the probe card model needs optimization, determining optimization recommendations based on the type of the target component model and the type of stress concentration region.

[0180] In some implementations, when it is determined that the probe card model needs optimization, and the target component model is a mechanical reinforcement model, and the stress concentration area is the fastener mounting area in the mechanical reinforcement model, the optimization suggestions include adjusting the arrangement of the fastener mounting holes.

[0181] By using the mechanical simulation results of stress concentration areas, the target component model in the probe card model where the stress concentration areas are located, and the standard values ​​corresponding to the mechanical simulation results of the preset target component model, it is determined whether the probe card model needs optimization. When it is determined that the probe card model needs optimization, optimization suggestions are determined based on the type of the target component model. This can greatly reduce the dependence of data analysis methods on manual work, improve optimization efficiency, and also improve optimization results.

[0182] In summary, the thermal conductivity simulation experiment method for probe cards provided in this application has the following advantages: 1. By conducting heat conduction simulation experiments based on simulation models, actual temperature data, and thermal conductivity coefficient data, including the first heat transfer mode and the second heat transfer mode, temperature field data is obtained. The first heat transfer mode is the heat transfer mode in which the probe card model and the probe station model are in direct contact, and the second heat transfer mode is the mode in which the simulated heat source transfers heat indirectly to the probe card model through the simulated chamber. This makes the heat conduction simulation experiment scenario closer to the actual test scenario, thereby improving the accuracy of the temperature field data.

[0183] 2. By detecting the actual temperature, the steady-state temperature in the actual temperature data is calculated based on the actual detected temperature, which can improve the accuracy of the temperature field data.

[0184] In some implementations, the method further includes steps S910 to S950, which are used to construct a simulation model.

[0185] Step S910: Obtain the determination information of the probe card model, and generate the probe card model based on the determination information of the probe card model.

[0186] In some implementations, the probe card model includes multiple component models. In this case, step S100 includes steps S911 to S913.

[0187] Step S911: Obtain the identifier of each component model of the probe card model.

[0188] The identifiers of the component models correspond one-to-one with the component models themselves.

[0189] Optionally, the identification of the component model includes the component model number.

[0190] Step S912: Obtain each component model from the preset component library based on the identifier of each component model.

[0191] The preset parts library includes model files for all available parts models.

[0192] Step S913: Obtain the component model assembly relationship, and assemble all component models based on the component model assembly relationship to obtain the probe card model.

[0193] In some implementations, the component model assembly relationship input by the user is directly obtained, and all component models are assembled based on the component model assembly relationship to obtain the probe card model.

[0194] In some implementations, multiple component models are of different types. In this case, the type of each component model is determined based on its identifier and a pre-defined correspondence between the identifier and type. This determines the type combination of all component models. Then, the assembly relationship of the component models corresponding to this type combination is obtained, and all component models are assembled based on this assembly relationship to obtain the probe card model. This method improves the flexibility of generating probe card models, enabling the generation of corresponding probe card models according to different user needs.

[0195] The assembly relationship of the component models includes the assembly position of each component model.

[0196] In some implementations, the information for determining the probe card model is the model file of the probe card model. In this case, step S910 includes step S914.

[0197] Step S914: Obtain the determination information of the probe card model, and parse the determination information of the probe card model to obtain the probe card model.

[0198] Step S920: Obtain the relative distance between the simulated heat source and the probe card model.

[0199] Optionally, the relative distance can range from 5 millimeters (mm) to 20 millimeters. For example, the relative distance can be 5 mm, 6 mm, 10 mm, 15 mm, 18 mm, or 10 mm.

[0200] Step S930: Determine the target location of the simulated heat source in the preset initial probe station model based on the relative distance.

[0201] The initial probe station model includes a simulated heat source and a probe station main body model. The simulated heat source is assembled with the probe station main body model, and the upper surface of the simulated heat source is lower than the upper surface of the probe station main body model.

[0202] Please see Figure 2 and Figure 3 , Figure 2 This is a top view structural diagram of the simulation model provided in the embodiments of this application. Figure 3 This is the first implementation of the simulation model. Figure 2 A sectional view at section line AA. (See example.) Figure 2 and Figure 3 As shown, simulation model 1 includes probe station model 10 and probe card model 20. Probe station model 20 is the final probe station model. The only difference between the initial probe station model and the final probe station model is that the position of the simulated heat source 11 may be different.

[0203] like Figure 3As shown, in some embodiments, the probe station model 10 includes a simulated heat source 11 and a probe station body model 12. The upper surface A1 of the simulated heat source 11 is lower than the upper surface A2 of the probe station body model 12.

[0204] In some implementations, the simulated heat source is a test chuck model, which is a three-dimensional model of the device used to test the probe card.

[0205] Optionally, the probe station body model 12 is a geometry with a simulated hole D, and the simulated heat source 11 is located in the simulated hole D and divides the simulated hole D into two completely isolated parts.

[0206] For example, the probe station body model 12 is a cuboid with simulated holes D. The simulated heat source 11 is a cylinder.

[0207] In existing technologies, the probe station body often includes a large number of complex testing devices, and constructing a probe station body model according to its actual structure would significantly increase the computational load. Furthermore, the test chuck also often comprises numerous parts. This application simplifies the probe station body model and the simulated heat source, thereby greatly reducing the computational load for simulation experiments using this model.

[0208] In some implementations, the relative distance is a numerical value. The upper surface of the simulated heat source is made parallel to the upper surface of the initial probe station model, with the distance being a relative distance, thus determining the target location of the simulated heat source. This method allows the simulated heat source to be directly aligned with the probe card model to be placed on the upper surface of the probe station model, thereby simplifying the simulation model and reducing the computational load of the simulation experiment.

[0209] Optionally, the target location of the simulated heat source can be a specified point on the simulated heat source or a target location on a specified plane.

[0210] In other embodiments, the relative distance is a distance vector from a designated plane on the simulated heat source to a preset standard point. In this case, the target position of the simulated heat source is determined based on this distance vector, the designated plane on the simulated heat source, and the preset standard point. The standard point is used to identify the position of the probe card model to be assembled with the final probe station model. In this situation, the upper surface of the simulated heat source may not be parallel to the upper surface of the initial probe station model, thus the simulated heat source may not be directly facing the probe card model. This allows for flexible adjustment of the target position of the simulated heat source according to user needs.

[0211] Step S940: In the initial probe station model, adjust the position of the simulated heat source to the target position to obtain the final probe station model.

[0212] Step S950: Assemble the probe card model with the final probe station model so that the probe card model is opposite to the simulated heat source. The probe card model, the simulated heat source and the probe station main body model together form a simulation chamber, thereby obtaining the simulation model.

[0213] By assembling the probe card model with the final probe station model, so that the probe card model is opposite to the simulated heat source, the probe card model, the simulated heat source and the main body model of the probe station together form a simulated chamber, thus obtaining a simulation model. This simulation model can fit the actual test scenario, thereby making the simulation experiment results using this simulation model more accurate.

[0214] In some implementations, the probe card model is placed on the upper surface of the final probe station model so that the probe card model is opposite to the simulated heat source. The probe card model, the simulated heat source, and the main probe station model together form a simulation chamber, thereby obtaining a simulation model.

[0215] For example, the probe card model 20 is placed on the upper surface of the final probe station model 20 so that the probe card model 20 is opposite to the simulated heat source 11. The probe card model 20, the simulated heat source 11, and the probe station main body model 12 together form a simulated chamber 30, thereby obtaining the simulation model 1. Here, the probe card model 20 and the probe station model 20 are defined to be in rigid contact.

[0216] Please see Figure 4 , Figure 4 This is an exploded view of the first embodiment of the simulation model provided in this application. (See attached diagram.) Figure 4 As shown, in some embodiments, the probe card model 20 includes a mechanical reinforcement model 21 and a circuit board model 22. The mechanical reinforcement model 21 is assembled with the circuit board model 22, and the distance between the circuit board model 22 and the simulated heat source 11 is less than the distance between the mechanical reinforcement model 21 and the simulated heat source 11.

[0217] In existing technologies, probe cards include electrical probes, and the mechanical simulation results for each probe are typically calculated based on the elastic modulus of each probe. However, the computational load of existing technologies is enormous. The inventors discovered that the probes are made of metal, while the circuit boards and mechanical reinforcements are made of flame-retardant resin materials (e.g., FR-4 grade materials). During the heating process of the probe card, the deformation generated by the circuit board or mechanical reinforcement is far greater than the deformation generated by the probe itself. Therefore, to reduce the computational load, the probe card model 20 is further composed of a mechanical reinforcement model 21 and a circuit board model 22.

[0218] In some implementations, the circuit board model is circular or approximately circular, with a diameter of 400 mm to 500 mm.

[0219] In some embodiments, the mechanical reinforcement model is circular or approximately circular in shape, with a diameter of 450 mm to 600 mm.

[0220] Furthermore, the probe card model also includes a substrate model and a probe model. The assembly sequence of the various component models of the probe card model is as follows: mechanical reinforcement model, circuit board model, substrate model, and probe model. In this way, the structure of the probe card model can be made closer to the structure of a real probe card, thereby improving the accuracy of experimental results.

[0221] In some implementations, there are multiple probe models, such as 5,000 or 10,000 probe models. The probe models are perpendicular to the substrate model.

[0222] In some embodiments, the substrate model is circular or approximately circular in shape, with a diameter of 320 mm to 300 mm.

[0223] Please see Figure 5 , Figure 5 This is the second implementation of the simulation model. Figure 2 A sectional view at section line AA. (See example.) Figure 5 As shown, the final probe station model 10 further includes a wafer model 13, which is located above the simulated heat source 11 and below the probe card model 20. In some embodiments, the wafer model 13 is simulated to be placed on the simulated heat source 11, and the position of the wafer model 13 changes when the position of the simulated heat source 11 changes.

[0224] like Figure 5 As shown, in some embodiments, the probe card model 20 includes a mechanical reinforcement model 21, a circuit board model 22, a substrate model 23, and a probe model 24. The assembly order of the multiple component models of the probe card model 20 is mechanical reinforcement model 21, circuit board model 22, substrate model 23, and probe model 24. During the simulation experiment, the positions of the simulated heat source 11 and the wafer model 13 can be set so that the probe model 24 directly contacts the wafer model 13.

[0225] By using the above methods, the simulation model can more closely resemble the actual test scenario, thus making the results of simulation experiments conducted using this simulation model more accurate.

[0226] Please see Figure 6A and Figure 6B , Figure 6A This is a temperature field distribution diagram of the side of the mechanical reinforcement model away from the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 6BThis is a temperature field distribution diagram of the side of the mechanical reinforcement model near the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. (See diagram for example.) Figure 6A and Figure 6B As shown, the temperature index value at the center of the mechanical reinforcement model 21 is higher than that at the edge.

[0227] Please see Figure 6C and Figure 6D , Figure 6C This is a temperature field distribution diagram of the side of the circuit board model away from the wafer model in a thermal conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 6D This is a temperature field distribution diagram of the side of the circuit board model closest to the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. (See diagram for example.) Figure 6C and Figure 6D As shown, the temperature index value at the center of circuit board model 22 is higher than the temperature index value at the edge. The temperature index value of the edge of the circuit board model closer to the wafer model is higher than the temperature index value of the edge of the circuit board model farther from the wafer model.

[0228] Please see Figure 7A and Figure 7B , Figure 7A This is a stress distribution diagram of the side of the circuit board model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7B This is a stress distribution diagram of the side of the circuit board model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7A and Figure 7B As shown, the stress index value of a portion of the edge region of circuit board model 22 is higher than that of the center region.

[0229] Please see Figure 7C to Figure 7E , Figure 7C This is a diagram showing the deformation distribution of the side of the mechanical reinforcement model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7D This is a diagram showing the deformation distribution of the side of the mechanical reinforcement model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7E This is a cross-sectional view of the mechanical reinforcement model in the mechanical simulation experiment of the probe card, implemented using the simulation model provided in the embodiments of this application. For example... Figure 7C to Figure 7E As shown, the deformation at the center of the mechanical reinforcement model 21 is greater than the deformation at the edge.

[0230] Please see Figure 7F to Figure 7H , Figure 7FThis is a diagram showing the deformation distribution of the side of the circuit board model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7G This is a diagram showing the deformation distribution of the side of the circuit board model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7H This is a cross-sectional view of the circuit board model used in the mechanical simulation experiment of the probe card implemented using the simulation model provided in the embodiments of this application. For example... Figure 7F to Figure 7H As shown, the deformation at the center of circuit board model 22 is greater than the deformation at the edges.

[0231] Please see Figure 8 , Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. For example... Figure 8 As shown, the electronic device 400 includes: one or more processors 410 and a memory 420. Figure 8 Take a processor 410 as an example.

[0232] In some implementations, the processor 410 and the memory 420 may be connected via a bus or other means. Figure 8 Taking the example of a connection between China and Israel via a bus.

[0233] In some embodiments, the processor 410 is configured to acquire a simulation model, which includes a probe card model and a probe station model. The probe card model and the probe station model are assembled to form a simulation chamber between them. The probe station model includes a simulated heat source opposite to the probe card model. The processor acquires actual temperature data and thermal conductivity data of the probe card. Based on the simulation model, the actual temperature data, and the thermal conductivity data, the processor performs a heat conduction simulation experiment including a first heat transfer mode and a second heat transfer mode to obtain temperature field data. The first heat transfer mode is a heat transfer mode in which the probe card model and the probe station model are in direct contact, and the second heat transfer mode is a mode in which the simulated heat source indirectly transfers heat to the probe card model through the simulation chamber.

[0234] In some embodiments, memory 420 serves as a non-volatile computer-readable storage medium, used to store non-volatile software programs, non-volatile computer-executable programs, and modules, such as the program instructions / modules of the probe card thermal conduction simulation experiment method in the embodiments of this application. Processor 410 executes various functional applications and data processing of electronic device 400 by running the non-volatile software programs, instructions, and modules stored in memory 420, thereby implementing the probe card thermal conduction simulation experiment method of the above-described method embodiments.

[0235] In some embodiments, memory 420 may include a program storage area and a data storage area, wherein the program storage area may store the operating system and applications required for at least one function; the data storage area may store data created based on the use of electronic device 400, etc. Furthermore, memory 420 may include high-speed random access memory and may also include non-volatile memory, such as at least one disk storage device, flash memory device, or other non-volatile solid-state storage device. In some embodiments, memory 420 may optionally include memory remotely located relative to processor 410, and this remote memory may be connected to the controller via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0236] In some implementations, one or more modules are stored in memory 420 and, when executed by one or more processors 410, perform the thermal conductivity simulation experiment method of the probe card in any of the above method embodiments, for example, performing the above-described... Figure 1 The method steps S100 to S300.

[0237] Please refer to Figure 9 , Figure 9 This is a structural block diagram of a computer-readable storage medium provided in an embodiment of this application. The computer-readable storage medium 500 stores program code 510, which can be called by a processor to execute the probe card thermal conduction simulation experiment method described in the above method embodiments.

[0238] The computer-readable storage medium 500 may be an electronic storage device such as flash memory, electrically erasable programmable read-only memory (EEPROM), hard disk, or read-only memory (ROM). Optionally, the computer-readable storage medium includes a non-volatile computer-readable medium. The computer-readable storage medium 500 has storage space for program code that performs any of the method steps of the thermal conductivity simulation experiment method described above for the probe card. This program code can be read from or written to one or more computer program products. The program code may be compressed, for example, in a suitable form.

[0239] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described method for simulating the thermal conduction of a probe card.

[0240] In summary, this application provides a method for simulating the thermal conduction of a probe card, an electronic device, and a storage medium. The method for simulating the thermal conduction of a probe card includes: acquiring a simulation model, which includes a probe card model and a probe station model, wherein the probe card model and the probe station model are assembled and form a simulated chamber between them, and the probe station model includes a simulated heat source opposite to the probe card model; acquiring the actual temperature data and thermal conductivity data of the probe card; and conducting a thermal conduction simulation experiment based on the simulation model, the actual temperature data, and the thermal conductivity data, including a first heat transfer mode and a second heat transfer mode, to obtain temperature field data. The first heat transfer mode is a heat transfer mode in which the probe card model and the probe station model are in direct contact, and the second heat transfer mode is a mode in which the simulated heat source indirectly transfers heat to the probe card model through the simulated chamber. This application obtains temperature field data by conducting heat conduction simulation experiments based on simulation models, actual temperature data, and thermal conductivity coefficient data, including a first heat transfer mode and a second heat transfer mode. The first heat transfer mode is the heat transfer mode in which the probe card model and the probe station model are in direct contact, and the second heat transfer mode is the mode in which the simulated heat source indirectly transfers heat to the probe card model through the simulated chamber. This makes the scenario of the heat conduction simulation experiment closer to the actual test scenario, thereby improving the accuracy of the temperature field data.

[0241] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A method for simulating thermal conduction experiments using a probe card, characterized in that, include: A simulation model is obtained, the simulation model including a probe card model and a probe station model, the probe card model and the probe station model are assembled and form a simulation chamber between the probe card model and the probe station model, and the probe station model includes a simulated heat source opposite to the probe card model; Obtain the actual temperature data and thermal conductivity data of the probe card; Based on the simulation model, the actual temperature data, and the thermal conductivity coefficient data, a heat conduction simulation experiment including a first heat transfer mode and a second heat transfer mode is conducted to obtain temperature field data. The first heat transfer mode is the heat transfer mode in which the probe card model and the probe station model are in direct contact, and the second heat transfer mode is the mode in which the simulated heat source indirectly transfers heat to the probe card model through the simulated chamber.

2. The thermal conduction simulation experiment method for the probe card according to claim 1, characterized in that, The heat conduction simulation experiment based on the simulation model, the actual temperature data, and the thermal conductivity coefficient data, including a first heat transfer mode and a second heat transfer mode, yields temperature field data, including: The steady-state temperature in the actual temperature data is determined as the boundary condition in the heat conduction simulation experiment. Based on the actual temperature data and the simulation model, a heat conduction simulation experiment including the first heat transfer mode and the second heat transfer mode was conducted to obtain the temperature field data under the boundary conditions.

3. The thermal conduction simulation experiment method for the probe card according to claim 1, characterized in that, The probe card model includes multiple component models, including a mechanical reinforcement model, a circuit board model, a substrate model, and a probe model. The assembly order of the multiple component models is as follows: mechanical reinforcement model, circuit board model, substrate model, and probe model. The probe station model also includes a wafer model, which is located above the simulated heat source; The probe model is in direct contact with the wafer model.

4. The thermal conduction simulation experiment method for the probe card according to claim 3, characterized in that, The heat transfer sequence in the first heat transfer method is: the simulated heat source, the wafer model, the probe model, the substrate model, the circuit board model, and the mechanical reinforcement model.

5. The thermal conduction simulation experiment method for the probe card according to claim 3, characterized in that, The heat transfer sequence in the second heat transfer method is: the simulated heat source, the wafer model, the simulated chamber, the probe model, the substrate model, the circuit board model, and the mechanical reinforcement model.

6. The thermal conduction simulation experiment method for the probe card according to claim 1, characterized in that, The probe card includes a mechanical reinforcement and a circuit board, and the method further includes: During the testing process of the probe card, the temperature at multiple points on the surface of the mechanical reinforcement of the probe card is detected to obtain multiple first detection temperatures, and the temperature at multiple points on the surface of the circuit board is detected to obtain multiple second detection temperatures; The actual temperature data of the probe card is determined based on all the first detection temperatures and all the second detection temperatures.

7. The thermal conduction simulation experimental method for the probe card according to claim 6, characterized in that, During the testing process of the probe card, the temperature at multiple points on the surface of the mechanical reinforcement of the probe card is detected to obtain multiple first detection temperatures, and the temperature at multiple points on the surface of the circuit board is detected to obtain multiple second detection temperatures, including: During the testing of the probe card, when the temperature detected by the first temperature detection device of the probe station assembled with the probe card is the experimental temperature, the second temperature detection device is controlled to detect the temperature at multiple points on the surface of the mechanical reinforcement of the probe card during the testing process, thereby obtaining multiple first detection temperatures, and to detect the temperature at multiple points on the surface of the circuit board, thereby obtaining multiple second detection temperatures.

8. The thermal conduction simulation experiment method for the probe card according to claim 6, characterized in that, The determination of the actual temperature data of the probe card based on all the first detection temperatures and all the second detection temperatures includes: The average value of all the first detected temperatures is determined as the steady-state temperature of the mechanical reinforcement in the actual temperature data; The average value of all the second detected temperatures is determined as the steady-state temperature of the circuit board in the actual temperature data, thereby obtaining the actual temperature data.

9. An electronic device, characterized in that, The electronic device includes: At least one processor; and a memory communicatively connected to said at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor, which, when executed by the at least one processor, enables the at least one processor to perform the thermal conductivity simulation experiment method of the probe card as described in any one of claims 1 to 8.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores an executable program, which is executed by a processor to implement the thermal conduction simulation experiment method for the probe card as described in any one of claims 1 to 8.

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