Semiconductor device, substrate unit and method for manufacturing substrate unit

Abstract

One embodiment provides a semiconductor device, a substrate unit, and a method for manufacturing the semiconductor device capable of suppressing the occurrence of defects. According to one embodiment, a semiconductor device includes a substrate, an electronic component, a plurality of bonding portions, and a first metal portion. The substrate has a first surface, a second surface located on the opposite side of the first surface, and a first side surface spanning a first edge of the first surface and a second edge of the second surface. The electronic component is mounted on the second surface. The plurality of joining parts are provided on the first surface and include a first joining part. The first metal portion includes a first portion extending along the first surface and a second portion extending along the first side surface. The area of the first metal portion when viewed from a first direction, which is the thickness direction of the substrate, is larger than that of the first bonding portion.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to a semiconductor device, a substrate unit, and a manufacturing method of a substrate unit. BACKGROUND

[0002] A semiconductor device is known that includes a substrate, a plurality of solder balls provided on a first surface of the substrate, and an electronic component mounted on a second surface of the substrate. SUMMARY

[0003] One embodiment provides a semiconductor device, a substrate unit, and a manufacturing method of a substrate unit that can suppress occurrence of an undesirable condition.

[0004] A semiconductor device of one embodiment includes a substrate, an electronic component, a plurality of junctions, and a first metal portion. The substrate includes a first surface, a second surface on an opposite side of the first surface, and a first side surface that spans a first edge of the first surface and a second edge of the second surface. The electronic component is mounted on the second surface. The plurality of junctions are provided on the first surface and include a first junction. The first metal portion includes a first portion that extends along the first surface and a second portion that extends along the first side surface. An area of the first metal portion, as viewed in a first direction that is a thickness direction of the substrate, is larger than that of the first junction. BRIEF DESCRIPTION OF DRAWINGS

[0005] Figure 1 FIG. 1 is a cross-sectional view of a substrate unit of a first embodiment.

[0006] Figure 2 FIG. 2 is a plan view of a substrate of the first embodiment.

[0007] Figure 3 FIG. 3 is a cross-sectional view of a semiconductor device of the first embodiment.

[0008] Figure 4 FIG. 4 is a perspective view of a back surface of the semiconductor device of the first embodiment.

[0009] Figure 5 FIG. 5 is a bottom view of the back surface of the semiconductor device of the first embodiment.

[0010] Figure 6 FIG. 6 is a cross-sectional view of a manufacturing method of a substrate unit of the first embodiment.

[0011] Figure 7 FIG. 7 is a cross-sectional view for explaining a heat dissipation-related effect of the substrate unit of the first embodiment.

[0012] Figure 8 FIG. 8 is a cross-sectional view for explaining a manufacturing-related matter of the substrate unit of the first embodiment.

[0013] Figure 9 FIG. 6 is a cross-sectional view showing a manufacturing method of a substrate unit of a first modification of the first embodiment.

[0014] Figure 10 FIG. 7 is a cross-sectional view showing a manufacturing method of a substrate unit of a second modification of the first embodiment.

[0015] Figure 11 FIG. 8 is a cross-sectional view showing a manufacturing method of a substrate unit of a third modification of the first embodiment.

[0016] Figure 12 FIG. 9 is a cross-sectional view showing a manufacturing method of a substrate unit of a fourth modification of the first embodiment.

[0017] Figure 13 FIG. 10 is a cross-sectional view showing a manufacturing method of a substrate unit of a fifth modification of the first embodiment.

[0018] Figure 14 FIG. 11 is a cross-sectional view showing a manufacturing method of a substrate unit of a sixth modification of the first embodiment.

[0019] Figure 15 FIG. 12 is a bottom view showing a back surface of a semiconductor device of the second embodiment.

[0020] Figure 16 FIG. 13 is a cross-sectional view showing a substrate unit of the third embodiment.

[0021] BRIEF DESCRIPTION OF DRAWINGS

[0022] 1, 1B … substrate unit

[0023] 10 … substrate

[0024] 30, 30A, 30B … semiconductor device

[0025] 31 … package substrate

[0026] 31a … first surface

[0027] 31b … second surface

[0028] 31aa … edge (first edge)

[0029] 31ab … edge (third edge)

[0030] 31ba … edge (second edge)

[0031] 31bb … edge (fourth edge)

[0032] 31ca … first side surface

[0033] 31cb … second side surface

[0034] 32… Electronic components

[0035] 36…Metal Department

[0036] 36A…First Metal Section

[0037] 36B…Second Metal Section

[0038] 61…First Level

[0039] 62…Erecting section

[0040] 63…Second Level

[0041] 70… Solder fillet Detailed Implementation

[0042] Hereinafter, a semiconductor device, a substrate unit, and a method for manufacturing the substrate unit according to embodiments will be described with reference to the accompanying drawings.

[0043] In the following description, the same reference numerals are used to describe components that have the same or similar functions. Additionally, repeated descriptions of these components are sometimes omitted. In this application, "parallel," "orthogonal," or "identical" can each include cases of "substantially parallel," "substantially orthogonal," or "substantially identical." In this application, "connection" is not limited to mechanical connections and can include electrical connections. That is, "connection" is not limited to direct connection to an object and can include connections to an object by intervening other elements therebetween.

[0044] In this application, the +X direction, -X direction, +Y direction, -Y direction, +Z direction, and -Z direction are defined as follows. The +X direction, -X direction, +Y direction, and -Y direction are directions parallel to the first surface 31a of the packaging substrate 31 described later (see reference). Figure 1 The +X direction is from the second side 31cb of the package substrate 31 described later toward the first side 31ca (see reference). Figure 1 The -X direction is the opposite of the +X direction. Without distinguishing between the +X and -X directions, it is simply referred to as the "X direction". The +Y and -Y directions are directions that intersect (e.g., are orthogonal to) the X direction. The +Y direction is the direction from the fourth surface 31cd of the package substrate 31 described later towards the third surface 31cc (see reference). Figure 4 The -Y direction is the direction opposite to the +Y direction. Without distinguishing between the +Y and -Y directions, it is simply referred to as the "Y direction". The +Z and -Z directions are directions that intersect (e.g., are orthogonal) the X and Y directions. The +Z direction is the direction from the first surface 31a of the packaging substrate 31 described later towards the second surface 31b (see reference). Figure 1). The -Z direction is a direction opposite to the +Z direction. In the case where the +Z direction and the -Z direction are not distinguished, it is simply referred to as "Z direction". The Z direction is a thickness direction of the packaging substrate 31. The Z direction is an example of the "first direction". The Y direction is an example of the "second direction". The X direction is an example of the "third direction".

[0045] (First Embodiment)

[0046] <1. Overall Configuration of Substrate Unit>

[0047] Reference Figures 1 to 7 The substrate unit 1 of the first embodiment will be described.

[0048] Figure 1 is a cross-sectional view of the substrate unit 1. In addition, in Figure 1 , the illustration of the solder resist layer is omitted for convenience of explanation.

[0049] The substrate unit 1 is an assembly in which components including a circuit are mounted. The substrate unit 1 has, for example, the substrate 10, the semiconductor device 30, and a plurality of solder joints 70.

[0050] <2. Substrate>

[0051] The substrate 10 is a printed wiring board. The substrate 10 is a plate member along the X direction and the Y direction. The substrate 10 is an example of each of the "circuit board" and the "second substrate". The substrate 10 has a first surface 10a and a second surface 10b. The first surface 10a is a surface facing the +Z direction. The second surface 10b is a surface located on the opposite side of the first surface 10a and facing the -Z direction. The substrate 10 includes, for example, an insulating base material 11, a conductive pattern 12, and a solder resist layer 13 (refer to Figure 7 ).

[0052] (insulating base material)

[0053] The insulating base material 11 is an insulating base material that forms a base of the substrate 10. The insulating base material 11 is, for example, an insulating hard member formed of an epoxy glass material or an insulating material such as polyimide.

[0054] (conductive pattern)

[0055] The conductive pattern 12 is a conductive portion provided to the insulating base material 11. The conductive pattern 12 is formed of, for example, a copper material. The conductive pattern 12 includes, for example, a plurality of pads 21, a plurality of pads 22, a plurality of conductive lines 23, and a conductive layer 24.

[0056] The plurality of pads 21 are pads for electrical connection. The plurality of pads 21 are separately arranged on the first surface 10a of the substrate 10 at positions corresponding to the plurality of solder balls 35 (described later) of the semiconductor device 30.

[0057] The plurality of pads 22 are pads for fixing the solder bumps 70. The plurality of pads 22 are separately arranged on the first surface 10a of the substrate 10 at positions corresponding to the metal portions (described later) of the semiconductor device 30.

[0058] Figure 2 is a plan view of the substrate 10. Each pad 22 has a first portion 22a and a second portion 22b. The first portion 22a overlaps the semiconductor device 30 when viewed in the Z direction. On the other hand, the second portion 22b does not overlap the semiconductor device 30 when viewed in the Z direction. The second portion 22b extends from the first portion 22a toward a direction away from the semiconductor device 30.

[0059] Returning to Figure 1 , the conductive lines 23 and the conductive layer 24 will be described.

[0060] The plurality of conductive lines 23 are conductive connection portions provided in the insulating base material 11. The conductive lines 23 are provided inside or on the surface of the insulating base material 11. Each conductive line 23 extends in a linear shape. Some of the conductive lines 23 are connected to the pads 21, for example. The other one or more (for example, a plurality of) conductive lines 23 connect the pads 22 to the conductive layer 24.

[0061] The conductive layer 24 is a conductive portion provided inside the insulating base material 11 and extending in a planar shape (a plate shape) along the X direction and the Y direction. The conductive layer 24 is a conductive portion having a larger area than the conductive lines 23. The conductive layer 24 is a so-called flat layer. The conductive layer 24 is a ground layer of the substrate 10, for example. In addition, the conductive layer 24 can also be a power supply layer of the substrate 10, or a metal layer for heat dissipation, or the like.

[0062] (Solder Resist)

[0063] The solder resist layer 13 (refer to Figure 7 ) is a protective layer provided on the first surface 10a and the second surface 10b of the substrate 10. The solder resist layer 13 is provided on the first surface 10a of the substrate 10 at a position offset from the pads 21 and the pads 22, for example. In addition, the solder resist layer 13 can also cover the edge portions of the pads 21 and / or the edge portions of the pads 22.

[0064] <3. Semiconductor Device>

[0065] Next, the semiconductor device 30 will be described.

[0066] Figure 3 is a cross-sectional view of the semiconductor device 30. The semiconductor device 30 has a substrate 31, one or more electronic components 32, a plurality of bonding wires 33, a sealing member 34, a plurality of solder balls 35, and a plurality of metal portions 36, for example. Hereinafter, in order to distinguish the substrate 31 of the semiconductor device 30 from the above-described substrate 10, the substrate 31 will be referred to as an "encapsulation substrate 31".

[0067] <3.1 Package Substrate>

[0068] The package substrate 31 is a printed wiring board. The package substrate 31 is a plate member along the X direction and the Y direction. The package substrate 31 is a rectangle in a view from the Z direction, which is the same shape as the semiconductor device 30. The package substrate 31 is an example of the "first substrate".

[0069] The package substrate 31 has a first surface 31a, a second surface 31b, and a peripheral surface 31c. The first surface 31a is a surface facing the -Z direction. The first surface 31a is a plane along the X direction and the Y direction. The second surface 31b is a surface located on the opposite side of the first surface 31a and facing the +Z direction. The second surface 31b is a plane along the X direction and the Y direction. The peripheral surface 31c extends in a direction intersecting the first surface 31a and the second surface 31b, across the periphery of the first surface 31a and the periphery of the second surface 31b. The peripheral surface 31c is along the Z direction.

[0070] Figure 4 is a perspective view of the back surface of the semiconductor device 30. The package substrate 31 is a rectangular plate. The above-described first surface 31a has four edges 31aa to 31ad corresponding to the four edges of the package substrate 31. The edge 31aa is an edge on the +X direction side. The edge 31aa extends in the Y direction. The edge 31ab is an edge on the -X direction side. The edge 31ab extends in the Y direction. The edge 31ac is an edge on the +Y direction side. The edge 31ac extends in the X direction, across one end of the edge 31aa and one end of the edge 31ab. The edge 31ad is an edge on the -Y direction side. The edge 31ad extends in the X direction, across the other end of the edge 31aa and the other end of the edge 31ab. The edge 31aa is an example of the "first edge". The edge 31ab is an example of the "third edge".

[0071] The above-described second surface 31b has four edges 31ba to 31bd corresponding to the four edges of the package substrate 31. The edge 31ba is an edge on the +X direction side. The edge 31ba extends in the Y direction. The edge 31bb is an edge on the -X direction side. The edge 31bb extends in the Y direction. The edge 31bc is an edge on the +Y direction side. The edge 31bc extends in the X direction, across one end of the edge 31ba and one end of the edge 31bb. The edge 31bd is an edge on the -Y direction side. The edge 31bd extends in the X direction, across the other end of the edge 31ba and the other end of the edge 31bb. The edge 31ba is an example of the "second edge". The edge 31bb is an example of the "fourth edge".

[0072] The circumferential surface 31c has four side surfaces 31ca to 31cd corresponding to the four edges of the packaging substrate 31. The first side surface 31ca is a surface facing the +X direction. The first side surface 31ca is a plane along the Y direction and the Z direction. The first side surface 31ca straddles the edge 31aa of the first surface 31a and the edge 31ba of the second surface 31b. The second side surface 31cb is located on the opposite side of the first side surface 31ca. The second side surface 31cb is a surface facing the -X direction. The second side surface 31cb is a plane along the Y direction and the Z direction. The second side surface 31cb straddles the edge 31ab of the first surface 31a and the edge 31bb of the second surface 31b.

[0073] The third side surface 31cc is a surface facing the +Y direction. The third side surface 31cc is a plane along the X direction and the Z direction. The third side surface 31cc straddles the edge 31ac of the first surface 31a and the edge 31bc of the second surface 31b. The fourth side surface 31cd is located on the opposite side of the third side surface 31cc. The fourth side surface 31cd is a surface facing the -Y direction. The fourth side surface 31cd is a plane along the X direction and the Z direction. The fourth side surface 31cd straddles the edge 31ad of the first surface 31a and the edge 31bd of the second surface 31b.

[0074] Returning to Figure 3 , the configuration of the packaging substrate 31 will be described. The packaging substrate 31 includes, for example, an insulating base material 41, a conductive pattern 42, and a solder resist layer 43.

[0075] (insulating base material)

[0076] The insulating base material 41 is an insulating base material that forms a base portion of the packaging substrate 31. The insulating base material 41 is an insulating hard member formed of an insulating material such as an epoxy glass resin or a polyimide.

[0077] (conductive pattern)

[0078] The conductive pattern 42 is a conductive portion provided to the insulating base material 41. The conductive pattern 42 is formed of, for example, a copper material. The conductive pattern 42 includes, for example, a plurality of pads 51, a plurality of conductive lines 52, and a conductive layer 53.

[0079] The plurality of pads 51 are pads for electrical connection. The plurality of pads 51 are exposed on the first surface 31a of the packaging substrate 31. The solder balls 35 are mounted on the respective pads 51.

[0080] Multiple conductive lines 52 are conductive connection portions disposed on the insulating substrate 41. The conductive lines 52 are disposed inside or on the surface of the insulating substrate 41. Each conductive line 52 extends in a linear form. For example, a portion of the conductive lines 52a of the multiple conductive lines 52 connects the electronic component 32 to the pad 51. One or more other conductive lines 52b of the multiple conductive lines 52 connect the conductive layer 53 to the metal portion 36 (described later). Alternatively, or based on the above example, one or more other conductive lines 52b of the multiple conductive lines 52 may connect the electronic component 32 to the metal portion 36 (described later).

[0081] At least a portion of the conductive layer 53 extends in a planar shape. The conductive layer 53 is, for example, a planar portion along the X and Y directions. The conductive layer 53 is opposed to the electronic component 32 in the Z direction. In this embodiment, the conductive layer 53 is disposed on the second surface 31b of the packaging substrate 31. The conductive layer 53 is, for example, directly contacted with the electronic component 32. Thus, the conductive layer 53 is thermally connected to the electronic component 32. Alternatively, the conductive layer 53 may also be thermally connected to the electronic component 32 via a thermally conductive component (such as a thermal pad or thermal grease).

[0082] (Solder Resistance)

[0083] The solder mask layer 43 is a protective layer disposed on the first surface 31a of the package substrate 31. For example, the solder mask layer 43 is disposed on the first surface 31a of the package substrate 31 at a position offset from the pad 51 and the metal portion 36. In addition, the solder mask layer 43 may also cover the edge portion of the pad 51 and / or the edge portion of the metal portion 36.

[0084] <3.2 Electronic Components>

[0085] Electronic component 32 is mounted on the second side 31b of the packaging substrate 31. Electronic component 32 is, for example, a semiconductor component. Electronic component 32 can be, for example, a semiconductor component including a SoC (System on a Chip) such as a controller, a semiconductor memory chip, or other semiconductor components. "Semiconductor memory chip" is, for example, a NAND type semiconductor memory chip, but can also be a DRAM (Dynamic Random Access Memory) type semiconductor memory chip or other forms of semiconductor memory chip.

[0086] <3.3 Bonding Leads>

[0087] The bonding wire 33 is an electrical connection portion that connects the second surface 31b of the package substrate 31 and the electronic component 32. Note that the electronic component 32 is not limited to one that is electrically connected to the package substrate 31 via the bonding wire 33. The electronic component 32 can also have a plurality of solder balls that face the second surface 31b of the package substrate 31 and be mounted to the second surface 31b of the package substrate 31.

[0088] <3.4 Sealing Member>

[0089] The sealing member 34 is an insulating portion that covers the electronic component 32 from the +Z direction side. In the present embodiment, the sealing member 34 covers the electronic component 32 and the bonding wire 33 from the +Z direction side. The sealing member 34 is, for example, a molded resin. The sealing member 34 is provided to the second surface 31b of the package substrate 31 and covers the second surface 31b of the package substrate 31 when viewed from the Z direction. Note that, as in the modification described later, the sealing member 34 can not be provided.

[0090] <3.5 Solder Ball>

[0091] The plurality of solder balls 35 are electrical connection portions that connect the semiconductor device 30 and the substrate 10. The plurality of solder balls 35 are provided to the first surface 31a of the package substrate 31 and exposed to the outside of the semiconductor device 30. Each solder ball 35 is connected to the land 51 exposed to the first surface 31a of the package substrate 31. The plurality of solder balls 35 are, for example, arranged in a lattice shape along the X direction and the Y direction. In the present embodiment, the plurality of solder balls 35 are BGA (Ball Grid Array) type solder portions. The solder ball 35 is an example of a "joining portion". The plurality of solder balls 35 have a plurality of solder balls 35S (see FIG. 6) disposed at the outermost periphery among the plurality of solder balls 35. Figure 4

[0092] Figure 5 FIG. 6 is a plan view of the semiconductor device 30.

[0093] The first surface 31a of the package substrate 31 has four regions A1 to A4 in which no solder ball 35 is disposed. The first region A1 is disposed along the edge 31aa of the first surface 31a. The first region A1 is disposed in correspondence with the central portion in the Y direction of the edge 31aa of the first surface 31a. The first region A1 is located between the plurality of solder balls 35 (for example, the plurality of solder balls 35S) in the Y direction. The second region A2 is disposed along the edge 31ab of the first surface 31a. The second region A2 is disposed in correspondence with the central portion in the Y direction of the edge 31ab of the first surface 31a. The second region A2 is located between the plurality of solder balls 35 (for example, the plurality of solder balls 35S) in the Y direction.

[0094] ​The third region A3 is disposed along the edge 31ac of the first surface 31a. The third region A3 is disposed in correspondence with a central portion in the X direction of the edge 31ac of the first surface 31a. The third region A3 is located between the plurality of solder balls 35 (for example, the plurality of solder balls 35S) in the X direction. The fourth region A4 is disposed along the edge 31ad of the first surface 31a. The fourth region A4 is disposed in correspondence with a central portion in the X direction of the edge 31ad of the first surface 31a. The fourth region A2 is located between the plurality of solder balls 35 (for example, the plurality of solder balls 35S) in the X direction.

[0095] <3.6 Metal Part>

[0096] Returning to Figure 3 , the metal part 36 will be described. The plurality of metal parts 36 are provided to the package substrate 31. The metal part 36 is, for example, a metal part provided in order to expect one or more of (1) improvement of self-alignment effect of the semiconductor device 30 in a reflow process, (2) improvement of component connection strength, and (3) improvement of heat dissipation properties. Further, the metal part 36 can be provided in order to expect an effect different from the above effects.

[0097] As shown in Figure 3 , each metal part 36 has, for example, a first horizontal portion 61, a standing portion 62, and a second horizontal portion 63. The first horizontal portion 61, the standing portion 62, and the second horizontal portion 63 are connected to each other, for example. Further, the expressions "horizontal portion" and "standing portion" are for convenience of explanation and do not limit the posture or shape of the metal part 36. In addition, the second horizontal portion 63 can be omitted.

[0098] The first horizontal portion 61 extends along the first surface 31a of the package substrate 31. The first horizontal portion 61 is a planar portion facing the -Z direction. The first horizontal portion 61 extends in the X direction and the Y direction. The first horizontal portion 61 is exposed to the outside of the semiconductor device 30. The first horizontal portion 61 is disposed adjacent to a part of the peripheral surface 31c of the package substrate 31. The first horizontal portion 61 extends from the standing portion 62 described later toward the central side of the first surface 31a. Here, in the present embodiment, the first horizontal portion 61 has, as described later, a main body portion 37 provided to the surface of the package substrate 31, and a surface layer portion 38 laminated with the main body portion 37. "The first horizontal portion 61 is exposed to the outside of the semiconductor device 30" is not limited to a case where the main body portion 37 of the first horizontal portion 61 is exposed to the outside, and can include a case where the surface layer portion 38 of the first horizontal portion 61 is exposed to the outside.

[0099] In a case where viewed from the Z direction, the area of the first horizontal portion 61 is larger than the area of any one of the plurality of solder balls 35 (for example, the first solder ball 35S1) (refer to Figure 5Solder ball 35S1 is an example of a "first joint". In this embodiment, the area of ​​the first horizontal portion 61 is larger than the sum of the areas of any two solder balls 35. Furthermore, "area of ​​solder ball" means the area of ​​the largest diameter portion of the solder ball.

[0100] The erected portion 62 rises from the end of the first horizontal portion 61 in the +Z direction. The erected portion 62 extends along the peripheral surface 31c of the packaging substrate 31 in the Z direction. The erected portion 62 is provided, for example, along the entire length of the thickness of the packaging substrate 31 in the Z direction (the entire length of the peripheral surface 31c in the Z direction). The erected portion 62 is exposed to the outside of the semiconductor device 30. Here, in this embodiment, as described later, the erected portion 62 has a main body portion 37 provided on the surface of the packaging substrate 31, and a surface layer portion 38 stacked with the main body portion 37. "The erected portion 62 is exposed to the outside of the semiconductor device 30" is not limited to the case where the main body portion 37 of the erected portion 62 is exposed to the outside; it may include the case where the surface layer portion 38 of the erected portion 62 is exposed to the outside.

[0101] The second horizontal portion 63 extends along the second surface 31b of the packaging substrate 31. The second horizontal portion 63 is a planar portion facing the +Z direction. The second horizontal portion 63 extends along both the X and Y directions. The second horizontal portion 63 is disposed adjacent to a portion of the peripheral surface 31c of the packaging substrate 31. The second horizontal portion 63 extends from the end of the upright portion 62 on the +Z direction side toward the center side of the second surface 31b. The second horizontal portion 63 is covered by the sealing member 34 from the +Z direction side.

[0102] When viewed from the Z direction, the area of ​​the second horizontal portion 63 is larger than the area of ​​any one solder ball 35 (e.g., the first solder ball 35S1) included in the plurality of solder balls 35. In this embodiment, the area of ​​the second horizontal portion 63 is larger than the sum of the areas of any two solder balls 35.

[0103] like Figure 4 As shown, in this embodiment, the plurality of metal portions 36 include first to fourth metal portions 36A to 36D. The first to fourth metal portions 36A to 36D are arranged separately from each other. The first to fourth metal portions 36A to 36D are respectively connected to the aforementioned conductive layer 53 via, for example, conductive wire 52b (see reference). Figure 3 For example, the second horizontal portion 63 of each of the first to fourth metal portions 36A to 36D is connected to the conductive layer 53 via a conductive line 52b. Alternatively, or based on the above example, the first horizontal portion 61 or the upright portion 62 of the first to fourth metal portions 36A to 36D may be connected to the conductive layer 53 via a conductive line 52b.

[0104] (Part 1 Metal Section)

[0105] The first metal portion 36A is provided in correspondence with a central portion in the Y direction of the edge 31aa of the first surface 31a. For example, the first horizontal portion 61 of the first metal portion 36A is disposed in correspondence with a central portion in the Y direction of the edge 31aa of the first surface 31a, and is provided in the region A1. The first horizontal portion 61 of the first metal portion 36A is an example of the "first portion".

[0106] Here, the plurality of solder balls 35 provided on the semiconductor device 30 includes a second solder ball 35S2 adjacent to the first solder ball 35S1 in the Y direction. The second solder ball 35S2 is an example of the "second bonding portion". In the present embodiment, the length L1 in the Y direction of the first horizontal portion 61 of the first metal portion 36A is greater than the center-to-center distance L2 between the first solder ball 35S1 and the second solder ball 35S2 (see Figure 5 ). Further, the first horizontal portion 61 of each of the second to fourth metal portions 36B to 36D also has the same area as the first horizontal portion 61 of the first metal portion 36A.

[0107] The first solder ball 35S1 described above is, for example, a solder ball 35 closest to the edge 31aa of the package substrate 31 among the plurality of solder balls 35. The distance L3 in the X direction between the center C of the package substrate 31 and the first horizontal portion 61 of the first metal portion 36A is equal to or less than the distance L4 in the X direction between the center C of the package substrate 31 and the first solder ball 35S1 (see Figure 5 ). In the present embodiment, the distance L3 described above is smaller than the distance L4 described above. In the present embodiment, a portion of the first horizontal portion 61 of the first metal portion 36A is located on the -X direction side than the outermost peripheral solder ball 35S.

[0108] The standing portion 62 of the first metal portion 36A is provided at a central portion in the Y direction of the first side surface 31ca of the package substrate 31. The standing portion 62 of the first metal portion 36A extends in the Z direction along the first side surface 31ca. The standing portion 62 of the first metal portion 36A is a planar portion facing the +X direction. The standing portion 62 of the first metal portion 36A is along the Y direction and the Z direction. The standing portion 62 of the first metal portion 36A is provided, for example, over the entire length in the Z direction of the first side surface 31ca. The standing portion 62 of the first metal portion 36A spans the edge 31aa of the first surface 31a and the edge 31ba of the second surface 31b. The length in the Y direction of the standing portion 62 of the first metal portion 36A is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the first metal portion 36A. The standing portion 62 of the first metal portion 36A is an example of the "second portion".

[0109] The second horizontal portion 63 of the first metal portion 36A is provided in correspondence with a central portion in the Y direction of the edge 31ba of the second surface 31b (see Figure 3The length in the Y direction of the second horizontal portion 63 of the first metal portion 36A is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the first metal portion 36A.

[0110] (Second Metal Portion)

[0111] The second metal portion 36B is provided in correspondence with a central portion in the Y direction of the edge 31ab of the first surface 31a. For example, the first horizontal portion 61 of the second metal portion 36B is disposed in correspondence with a central portion in the Y direction of the edge 31ab of the first surface 31a, and is provided in the region A2. The first horizontal portion 61 of the second metal portion 36B is an example of a "third portion".

[0112] In the present embodiment, the length L1 in the Y direction of the first horizontal portion 61 of the second metal portion 36B is larger than the center-to-center distance L2 of the first solder ball 35S1 and the second solder ball 35S2. In the present embodiment, a portion of the first horizontal portion 61 of the second metal portion 36B is located on the +X direction side from the outermost peripheral solder ball 35S.

[0113] The standing portion 62 of the second metal portion 36B is provided at a central portion in the Y direction of the second side surface 31cb of the package substrate 31. The standing portion 62 of the second metal portion 36B extends in the Z direction along the second side surface 31cb. The standing portion 62 of the second metal portion 36B is a planar portion facing the -X direction. The standing portion 62 of the second metal portion 36B is along the Y direction and the Z direction. The standing portion 62 of the second metal portion 36B is, for example, provided over the entire length in the Z direction of the second side surface 31cb. The standing portion 62 of the second metal portion 36B spans the edge 31ab of the first surface 31a and the edge 31bb of the second surface 31b. The length in the Y direction of the standing portion 62 of the second metal portion 36B is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the second metal portion 36B. The standing portion 62 of the second metal portion 36B is an example of a "fourth portion".

[0114] The second horizontal portion 63 of the second metal portion 36B is provided in correspondence with a central portion in the Y direction of the edge 31bb of the second surface 31b. The length in the Y direction of the second horizontal portion 63 of the second metal portion 36B is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the second metal portion 36B.

[0115] (Third Metal Portion)

[0116] The third metal portion 36C is provided in correspondence with a central portion in the X direction of the edge 31ac of the first surface 31a. For example, the first horizontal portion 61 of the third metal portion 36C is disposed in correspondence with a central portion in the X direction of the edge 31ac of the first surface 31a, and is provided in the region A3.

[0117] In the present embodiment, the length LI in the X direction of the first horizontal portion 61 of the third metal portion 36C is larger than the center-to-center distance L2 of the first solder ball 35S1 and the second solder ball 35S2. In the present embodiment, a part of the first horizontal portion 61 of the third metal portion 36C is located on the -Y direction side than the outermost peripheral solder ball 35S.

[0118] The standing portion 62 of the third metal portion 36C is provided at a central portion in the X direction of the third side surface 31cc of the packaging substrate 31. The standing portion 62 of the third metal portion 36C extends in the Z direction along the third side surface 31cc. The standing portion 62 of the third metal portion 36C is a planar portion facing the +Y direction. The standing portion 62 of the third metal portion 36C is along the X direction and the Z direction. The standing portion 62 of the third metal portion 36C is provided, for example, over the entire length in the Z direction of the third side surface 31cc. The standing portion 62 of the third metal portion 36C straddles the edge 31ac of the first surface 31a and the edge 31bc of the second surface 31b. The length in the X direction of the standing portion 62 of the third metal portion 36C is the same as the length in the X direction of the first horizontal portion 61 of the third metal portion 36C, for example.

[0119] The second horizontal portion 63 of the third metal portion 36C is provided in correspondence with a central portion in the Y direction of the edge 31bc of the second surface 31b. The length in the X direction of the second horizontal portion 63 of the third metal portion 36C is the same as the length in the X direction of the first horizontal portion 61 of the third metal portion 36C, for example.

[0120] (Fourth Metal Portion)

[0121] The fourth metal portion 36D is provided in correspondence with a central portion in the X direction of the edge 31ad of the first surface 31a. For example, the first horizontal portion 61 of the fourth metal portion 36D is disposed in correspondence with a central portion in the X direction of the edge 31ad of the first surface 31a, and is provided in the region A4.

[0122] In the present embodiment, the length LI in the X direction of the first horizontal portion 61 of the fourth metal portion 36D is larger than the center-to-center distance L2 of the first solder ball 35S1 and the second solder ball 35S2. In the present embodiment, a part of the first horizontal portion 61 of the fourth metal portion 36D is located on the +Y direction side than the outermost peripheral solder ball 35S.

[0123] The raised portion 62 of the fourth metal part 36D is provided at the center of the fourth side surface 31cd of the packaging substrate 31 in the X direction. The raised portion 62 of the fourth metal part 36D extends along the fourth side surface 31cd in the Z direction. The raised portion 62 of the fourth metal part 36D is a planar portion facing the -Y direction. The raised portion 62 of the fourth metal part 36D extends along both the X and Z directions. The raised portion 62 of the fourth metal part 36D, for example, covers the entire length of the fourth side surface 31cd in the Z direction. The raised portion 62 of the fourth metal part 36D crosses the edge 31ad of the first surface 31a and the edge 31bd of the second surface 31b. The length of the raised portion 62 of the fourth metal part 36D in the X direction is, for example, the same as the length of the first horizontal portion 61 of the fourth metal part 36D in the X direction.

[0124] The second horizontal portion 63 of the fourth metal portion 36D is provided corresponding to the central portion of the edge 31bd of the second surface 31b in the X direction. Similarly, the length of the second horizontal portion 63 of the fourth metal portion 36D in the X direction is, for example, the same as the length of the first horizontal portion 61 of the fourth metal portion 36D in the X direction.

[0125] like Figure 5 As shown, in this embodiment, each of the first to fourth sides 31ca to 31cd of the packaging substrate 31 has a recess 65. The recess 65 is provided at a position corresponding to the raised portion 62 of each metal portion 36. The recess 65 of the first side 31ca is formed by a portion of the first side 31ca recessing towards the center side (-X direction side) of the packaging substrate 31. The recess 65 of the second side 31cb is formed by a portion of the second side 31cb recessing towards the center side (+X direction side) of the packaging substrate 31. The recess 65 of the third side 31cc is formed by a portion of the third side 31cc recessing towards the center side (-Y direction side) of the packaging substrate 31. The recess 65 of the fourth side 31cd is formed by a portion of the fourth side 31cd recessing towards the center side (+X direction side) of the packaging substrate 31. The recess 65 is provided along the entire length of the thickness of the packaging substrate 31 in the Z direction.

[0126] In this embodiment, before the multiple semiconductor devices 30 are separated into individual wafers during the manufacturing process (in the state where the multiple semiconductor devices 30 are connected), a through-hole extending in the Z direction is provided at the boundary of two adjacent semiconductor devices 30. In the same process as forming the through-hole, a metal layer (e.g., a copper layer) is formed inside the through-hole, thereby forming the raised portion 62 of the metal portion 36. When using this manufacturing method, the aforementioned recess 65 remains in the semiconductor devices 30 after they are separated into individual wafers. If such a recess 65 exists, the solder joint 70, described later, is less likely to extend outward from the recess 65, and the shape of the solder joint 70 between the metal portion 36 and the substrate 10 is more likely to be stable. Therefore, if such a recess 65 exists, the connection strength between the metal portion 36 and the solder joint 70 can be further improved.

[0127] <3.7 Surface Layer>

[0128] like Figure 3 As shown, in this embodiment, a surface layer 38 is provided on the surface of the pad 51 and the metal portion 36 as part of the pad 51 or the metal portion 36. For example, the pad 51 and the metal portion 36 each have a main body portion 37 provided on the surface of the packaging substrate 31 and a surface layer portion 38 stacked with the main body portion 37.

[0129] The main body 37 is formed of a first material, for example, copper. The surface layer 38 is formed of a material different from the first material. The surface layer 38 is provided to improve solder wettability, improve rust resistance, or for other purposes. The surface layer 38 is formed, for example, by surface treatment or plating. One example of the surface layer 38 is a pre-soldering layer formed by surface treatment. Another example of the surface layer 38 is a plating layer formed by electroplating. The plating layer may, for example, include a first layer formed of nickel (Ni) and a second layer formed of gold (Au) on the first layer. Furthermore, the material of the surface layer 38 is not limited to the examples described above. In this embodiment, the surface layer 38 is continuously provided on the first horizontal portion 61, the raised portion 62, and the second horizontal portion 63 of the metal portion 36.

[0130] <3. Solder Joints>

[0131] Next, return to Figure 1 Solder joint 70 is provided between the metal portion 36 of the semiconductor device 30 and the pad 22 of the substrate 10. Solder joint 70 connects the metal portion 36 of the semiconductor device 30 to the pad 22 of the substrate 10.

[0132] In the present embodiment, the solder joint 70 has a first portion 71 connected to the first horizontal portion 61 of the metal portion 36 of the semiconductor device 30, and a second portion 72 connected to the standing portion 62 of the metal portion 36 of the semiconductor device 30. The second portion 72 is adjacent to the standing portion 62 in the horizontal direction. In the present embodiment, the solder joint 70 is connected across the first portion 22a and the second portion 22b of the pad 22 of the substrate 10.

[0133] <4. Method of manufacturing substrate unit>

[0134] Next, a method of manufacturing the substrate unit 1 will be described.

[0135] Figure 6 is a cross-sectional view showing a method of manufacturing the substrate unit 1. In the present embodiment, first, solder S is supplied to the plurality of pads 21 and the plurality of pads 22 of the substrate 10 (see (a) of Figure 6 ). The supply of the solder S is, for example, screen printing, but is not limited thereto. Next, the semiconductor device 30 is placed on the substrate 10 to which the solder S has been supplied.

[0136] Next, in a state where the semiconductor device 30 is placed on the substrate 10, a reflow process is performed. At this time, by the solder S supplied to the pad 22, the solder joint 70 connected across the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30 is formed (see (b) of Figure 6 ). Therefore, in a case where there is a positional deviation at the time of placement between the substrate 10 and the semiconductor device 30, a self-alignment effect is generated due to the surface tension (solder condensation force) of the solder joint 70 and the solder ball 35.

[0137] As a result, the semiconductor device moves to the correct position (see (c) of Figure 6 ). Thus, the positional deviation at the time of placement between the substrate 10 and the semiconductor device 30 is reduced (for example, the positional deviation is eliminated). Thus, the substrate unit 1 is completed.

[0138] <5. Effect related to heat dissipation>

[0139] Next, an effect related to heat dissipation of the substrate unit 1 will be described.

[0140] Figure 7 is a cross-sectional view for explaining an effect related to heat dissipation of the substrate unit 1. Figure 7The hollow arrow in the drawing indicates movement of heat. Heat emitted from the electronic component 32 propagates from the electronic component 32 to the conductive layer 53. The heat propagated to the conductive layer 53 propagates to the metal portion 36 via the conductive wire 52b. The heat propagated to the metal portion 36 propagates to the land 22 of the substrate 10 via the solder joint 70. The heat propagated to the land 22 propagates to the conductive layer 24 via the conductive wire 23. The heat propagated to the conductive layer 24 diffuses within the substrate 10 and is released from the surface of the substrate 10.

[0141] <6. Advantages>

[0142] As a comparative example, a semiconductor device 30 in which the metal portion 36 is not provided is considered. In the configuration of such a comparative example, since the solder joint 70 is not present, the following events can occur. (1) In the absence of the solder joint 70, only the self-alignment effect due to the surface tension of the solder ball 35 occurs. In this case, if the positional deviation at the time of placement between the substrate 10 and the semiconductor device 30 is large, it can be difficult to sufficiently eliminate the positional deviation due to the insufficient condensation force of the solder only by the self-alignment effect due to the surface tension of the solder ball 35. As a result, the reflow process is completed in a state in which the substrate 10 and the semiconductor device 30 are deviated, and it is difficult to improve the manufacturing yield. (2) In the substrate unit 1, if there is a positional deviation between the substrate 10 and the semiconductor device 30, the solder ball 35 sometimes generates a neck. If the solder ball 35 generates a neck, cracks or solder peeling worsen due to long-term stress (physical impact, residual stress, or damp heat, etc.), and can become a cause of product failure. (3) It is not possible to sufficiently ensure heat dissipation, and the semiconductor device 30 can experience a large temperature rise. If the semiconductor device 30 experiences a large temperature rise, it can cause the function and / or the life of the semiconductor device 30 to deteriorate.

[0143] On the other hand, the semiconductor device 30 of the present embodiment has the package substrate 31, the electronic component 32, the plurality of solder balls 35, and the first metal portion 36A. The first metal portion 36A includes a first horizontal portion 61 extending along the first surface 31a of the package substrate 31, and a standing portion 62 extending along the first side surface 31ca of the package substrate 31. The area of the first metal portion 36A when viewed in the Z direction is larger than the first solder ball 35S1 included in the plurality of solder balls 35.

[0144] According to such a configuration, one or more of the following (1) to (3) can be expected. Thus, the semiconductor device 30 can be inhibited from being in an undesirable state. (1) By providing the first metal portion 36A, the solder joint 70 connected to the first metal portion 36A can be formed. In the presence of the solder joint 70, a self-alignment effect due to surface tension of the solder joint 70 and the solder ball 35 can be expected. In this case, even if a positional deviation at the time of mounting between the substrate 10 and the semiconductor device 30 is large to some extent, the positional deviation is easily eliminated due to the large self-alignment effect. As a result, the manufacturing yield can be improved. (2) By forming the solder joint 70 across the first side surface 31ca of the semiconductor device 30, the joining strength between the substrate 10 and the semiconductor device 30 is improved as compared to the case where the solder joint is connected to the metal portion provided on the first surface 31a of the semiconductor device 30. Thus, even in the case where a stress (physical impact, residual stress, or damp heat, etc.) is applied for a long period of time, a crack or solder peeling is less likely to be deteriorated, and a product failure is less likely to occur. (3) By the first metal portion 36A and the solder joint 70 of the semiconductor device 30 functioning as a heat dissipation portion, the heat dissipation property can be improved. Thus, a large temperature rise of the semiconductor device 30 can be inhibited.

[0145] In the present embodiment, the first horizontal portion 61 of the first metal portion 36A is connected to the standing portion 62. According to such a configuration, the solder S is easily spread and wetted from the first horizontal portion 61 to the standing portion 62, and the solder joint 70 is easily formed. Thus, for example, a positional deviation at the time of mounting between the substrate 10 and the semiconductor device 30 is more easily eliminated.

[0146] In the present embodiment, the standing portion 62 of the first metal portion 36A spans the edge 31aa of the first surface 31a and the edge 31ba of the second surface 31b of the package substrate 31. According to such a configuration, the solder joint 70 is easily joined to the standing portion 62 of the metal portion 36 over the entire length in the Z direction of the first side surface 31ca of the package substrate 31. Thus, for example, a positional deviation at the time of mounting between the substrate 10 and the semiconductor device 30 is more easily eliminated. In addition, by easily forming the solder joint 70 larger, the joining strength and the heat dissipation property between the substrate 10 and the semiconductor device 30 can be further improved.

[0147] As a comparative example, a semiconductor device 30 in which the metal portion 36 is arranged at the corner portion of the package substrate 31 is considered. In the configuration of such a comparative example, since the metal portion 36 is arranged at the corner portion of the package substrate 31 where the solder ball 35 is arranged, it is possible that the area of the metal portion 36 cannot be sufficiently ensured. On the other hand, in the present embodiment, the first metal portion 36A is arranged in correspondence with the central portion in the Y direction of the edge 31aa of the first face 31a of the package substrate 31. According to such a configuration, compared with the above comparative example, it is easy to ensure the area of the metal portion 36 to be large. Due to this, it is easy to form the solder joint 70 to be larger, and it is more likely to eliminate the positional deviation at the time of mounting between the substrate 10 and the semiconductor device 30. In addition, by making it easy to form the solder joint 70 to be larger, it is possible to further improve the joining strength and the heat dissipation property between the substrate 10 and the semiconductor device 30.

[0148] In the present embodiment, the first metal portion 36A includes the second horizontal portion 63 which is connected to the standing portion 62 and extends along the second face 31b of the package substrate 31. According to such a configuration, the heat of the electronic component 32 is more likely to propagate to the first metal portion 36A via the second horizontal portion 63. Due to this, it is possible to further improve the heat dissipation property of the semiconductor device 30.

[0149] In the present embodiment, the package substrate 31 has the conductive layer 53 which at least a portion thereof extends in a planar manner. The first metal portion 36A is connected to the conductive layer 53. According to such a configuration, the heat of the electronic component 32 is more likely to propagate to the first metal portion 36A via the conductive layer 53. Due to this, it is possible to further improve the heat dissipation property of the semiconductor device 30.

[0150] In the present embodiment, the distance L3 in the X direction between the center C of the package substrate 31 and the first metal portion 36A is equal to or less than the distance L4 in the X direction between the center C of the package substrate 31 and the first solder ball 35S1. According to such a configuration, it is easy to ensure the area of the metal portion 36 to be large. Due to this, it is easy to form the solder joint 70 to be larger, and it is more likely to eliminate the positional deviation at the time of mounting between the substrate 10 and the semiconductor device 30. In addition, by making it easy to form the solder joint 70 to be larger, it is possible to further improve the joining strength and the heat dissipation property between the substrate 10 and the semiconductor device 30.

[0151] In the present embodiment, the semiconductor device 30 further includes a second metal portion 36B that is provided separately from the first metal portion 36A. The second metal portion 36B includes a first horizontal portion 61 that extends along the first surface 31a of the package substrate 31, and a standing portion 62 that extends along the second side surface 31cb of the package substrate 31. The area of the second metal portion 36B when viewed in the Z direction is larger than the first solder ball 35S1. According to such a configuration, by the presence of the second metal portion 36B that is separate from the first metal portion 36A, a plurality of solder joints 70 are formed. Thereby, for example, it is easier to eliminate positional deviation at the time of mounting between the substrate 10 and the semiconductor device 30. In addition, by functioning as a bonding portion by the first metal portion 36A, the second metal portion 36B, and the plurality of solder joints 70, it is possible to further improve the bonding strength between the substrate 10 and the semiconductor device 30. In addition, by functioning as a heat dissipation portion by the first metal portion 36A, the second metal portion 36B, and the plurality of solder joints 70, it is possible to further improve the heat dissipation property of the semiconductor device 30.

[0152] <6. Modification of the manufacturing method>

[0153] Next, a modification of the manufacturing method of the substrate unit 1 will be described. In each of the modifications, the configuration other than the configuration described below is the same as that of the first embodiment.

[0154] Figure 8 is a cross-sectional view for explaining matters related to the manufacturing of the substrate unit 1. As shown in Figure 8 solder balls 35 are mounted on the pads 51 of the semiconductor device 30. On the other hand, no solder balls 35 are mounted on the metal portion 36 of the semiconductor device 30. Therefore, in a case where the height of the solder S supplied to the pad 21 of the substrate 10 is the same as the height of the solder S supplied to the pad 22 of the substrate 10, a state in which a gap g remains between the solder S supplied to the pad 22 of the substrate 10 and the metal portion 36 of the semiconductor device 30 can be generated in a state in which the solder S supplied to the pad 21 of the substrate 10 is in contact with the solder ball 35 of the semiconductor device 30. Each of the modifications described below is a modification for manufacturing the substrate unit 1 well even in a case where such a gap g can be generated.

[0155] <6.1 First modification>

[0156] Figure 9 is a cross-sectional view that shows the manufacturing method of the substrate unit 1 of the first modification. In the present modification, a mask M for supplying the solder S to the pad 21 and the pad 22 of the substrate 10 by screen printing is provided on the substrate 10 (refer to Figure 9The mask M has a plurality of openings Mhl opposed to the plurality of pads 21, and a plurality of openings Mh2 (openings Mh2A, Mh2B) opposed to the plurality of pads 22 (pads 22A, 22B).

[0157] The opening Mh2 has a shape extending in a direction away from the center of the semiconductor device 30 compared to the pad 22. For example, the pad 22A arranged on the +X direction side with respect to the center of the semiconductor device 30 and the opening Mh2A corresponding to the pad 22A are described. In this case, the position in the X direction of the edge e11a of the opening Mh2A on the -X direction side is the same as the position in the X direction of the edge e21a of the pad 22A on the -X direction side. On the other hand, the position in the X direction of the edge e12a of the opening Mh2A on the +X direction side is on the +X direction side compared to the position in the X direction of the edge e22a of the pad 22A on the +X direction side.

[0158] Similarly, the pad 22B arranged on the -X direction side with respect to the center of the semiconductor device 30 and the opening Mh2B corresponding to the pad 22B are described. In this case, the position in the X direction of the edge e11b of the opening Mh2B on the +X direction side is the same as the position in the X direction of the edge e21b of the pad 22B on the +X direction side. On the other hand, the position in the X direction of the edge e12b of the opening Mh2B on the -X direction side is on the -X direction side compared to the position in the X direction of the edge e22b of the pad 22B on the -X direction side. As such, the opening Mh2 has a shape extending in a direction away from the center of the semiconductor device 30 compared to the pad 22. The same applies to the case where the pad 22 arranged on the +Y direction side with respect to the center of the semiconductor device 30 and the opening Mh2 are grouped, and the case where the pad 22 arranged on the -Y direction side with respect to the center of the semiconductor device 30 and the opening Mh2 are grouped.

[0159] Next, the solder S is supplied by screen printing using the mask M described above. Thereby, the solder S is supplied to the pad 21, and the solder S is supplied to the pad 22. In the present modification example, the opening Mh2 has a shape extending in a direction away from the center of the semiconductor device 30 compared to the pad 22. Therefore, the solder S is supplied in a shape away from the center of the semiconductor device 30 compared to the pad 22. A part of the solder S is arranged on the solder resist layer 13 deviated from the pad 22. In this state, the semiconductor device 30 is loaded on the substrate 10 (refer to FIG. 1) and is heated. As a result, the solder S is reflowed and is joined to the pad 21 and the pad 22. Figure 9 (b) of FIG. 6.

[0160] Next, in a state where the semiconductor device 30 is placed on the substrate 10, a reflow process is performed. At this time, the solder S supplied to the pad 22 is heated to become a flow state, and thus the solder S is collected above the pad 22 due to the condensing force P, and the height of the solder S on the pad 22 becomes high. Thus, even in a case where the gap g is generated as described above, the solder joint 70 that connects the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30 is formed well (see (c) in FIG. 6). Figure 9

[0161] <6.2 Second Modification>

[0162] Figure 10 is a cross-sectional view that shows a manufacturing method of the substrate unit 1 of the second modification. In the present modification, after the semiconductor device 30 is placed on the substrate 10, an operation of pressing the semiconductor device 30 against the substrate 10 is performed by adjusting the pressing amount of a mount that holds the semiconductor device 30 (see the hollow arrow in (a) in FIG. 6). Figure 10 Figure 10

[0163] <6.3 Third Modification>

[0164] Figure 11 is a cross-sectional view that shows a manufacturing method of the substrate unit 1 of the third modification. In the present modification, after the solder S is supplied to the pads 21 and 22 by screen printing, the solder S is additionally supplied to the pad 22 using a dispenser DS (see (a) in FIG. 6). Then, in a state where the solder S is additionally supplied to the pad 22, the semiconductor device 30 is placed on the substrate 10 (see (b) in FIG. 6). According to such a configuration, even in a case where the gap g is generated as described above, the solder joint 70 that connects the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30 is formed well. Figure 11 Figure 11

[0165] <6.4 Fourth Modification>

[0166] Figure 12 ​​​​​is a sectional view showing a manufacturing method of the substrate unit 1 of the 4th modification example. In this modification example, after the semiconductor device 30 is loaded on the substrate 10, the dispenser DS is used to additionally supply the solder S to the pad 22. For example, the solder S is additionally supplied to the 2nd portion 22b of the pad 22. According to such a configuration, even if the above-described gap g is generated, the solder joint 70 that connects the 1st portion 61 and the 2nd portion 62 of the metal portion 36 of the semiconductor device 30 is favorably formed.

[0167] <6.5 5th Modification Example>

[0168] Figure 13 is a sectional view showing a manufacturing method of the substrate unit 1 of the 5th modification example. In this modification example, after the solder S is supplied to the pad 21 and the pad 22 by screen printing, the mounter MT is used to additionally supply the solder S to the pad 22 (in (a) of Figure 13 ). The mounter MT, for example, places a block of the additionally supplied solder S on the solder S supplied to the pad 22. Then, in a state where the solder S is additionally supplied to the pad 22, the semiconductor device 30 is loaded on the substrate 10 (in (b) of Figure 13 ). According to such a configuration, even if the above-described gap g is generated, the solder joint 70 that connects the 1st portion 61 and the 2nd portion 62 of the metal portion 36 of the semiconductor device 30 is favorably formed.

[0169] <6.6 6th Modification Example>

[0170] Figure 14 is a sectional view showing a manufacturing method of the substrate unit 1 of the 6th modification example. In this modification example, after the semiconductor device 30 is loaded on the substrate 10, the mounter MT is used to additionally supply the solder S to the pad 22. For example, the solder S is additionally supplied to the 2nd portion 22b of the pad 22. The mounter MT, for example, places a block of the additionally supplied solder S on the solder S supplied to the pad 22. According to such a configuration, even if the above-described gap g is generated, the solder joint 70 that connects the 1st portion 61 and the 2nd portion 62 of the metal portion 36 of the semiconductor device 30 is favorably formed.

[0171] (2nd Embodiment)

[0172] Next, the 2nd embodiment will be described. The 2nd embodiment differs from the 1st embodiment in that the semiconductor device 30A has 2 metal portions 36. In addition, the configuration other than the configuration described below is the same as that of the 1st embodiment.

[0173] Figure 15is a bottom view of the semiconductor device 30A of Embodiment 2. In the present embodiment, the semiconductor device 30A has a first metal portion 36A and a second metal portion 36B. The first metal portion 36A is provided in correspondence with a central portion of the edge 31aa of the package substrate 31. The second metal portion 36B is provided in correspondence with a central portion of the edge 31ab of the package substrate 31. On the other hand, the semiconductor device 30 does not have the third metal portion 36C and the fourth metal portion 36D as in Embodiment 1. According to such a configuration, although the effect is not as great as in Embodiment 1, the configuration characteristics of the substrate unit 1 can be improved as in Embodiment 1.

[0174] (Embodiment 3)

[0175] Next, Embodiment 3 will be described. Embodiment 3 differs from Embodiment 1 in that the semiconductor device 30B has a heat spreader 81. In addition, the configuration other than the configuration described below is the same as that of Embodiment 1.

[0176] Figure 16 is a cross-sectional view of the substrate unit IB of Embodiment 3. Figure 16 The hollow arrow in indicates movement of heat. In the present embodiment, the semiconductor device 30B includes the heat spreader 81, a heat conduction member 82, and an adhesive portion 83.

[0177] The heat spreader 81 has a main body portion 81a and a support portion (leg portion) 81b. The main body portion 81a faces the electronic component 32 from the +Z direction side. The main body portion 81a faces the electronic component 32 from the opposite side of the package substrate 31. Between the main body portion 81a and the electronic component 32, the heat conduction member 82 (e.g., a heat conductive sheet) is disposed. The heat conduction member 82 has elasticity.

[0178] The support portion 81b extends from the main body portion 81a toward the peripheral end portion of the package substrate 31. In the present embodiment, the support portion 81b faces the second horizontal portion 63 of the metal portion 36 from the +Z direction side. The support portion 81b is connected to the second horizontal portion 63 of the metal portion 36 via the adhesive portion 83. Thus, the support portion 81b is fixed to the package substrate 31. By fixing the support portion 81b to the package substrate 31, the heat spreader 81 presses the main body portion 81a toward the electronic component 32. The adhesive portion 83 is formed of, for example, an adhesive sheet or an adhesive having heat conductivity. In addition, instead of the adhesive portion 83, another fixing configuration that fixes the support portion 81b of the heat spreader 81 to the second horizontal portion 63 of the metal portion 36 can be provided.

[0179] In the present embodiment, the heat emitted from the electronic component 32 is propagated to the main body portion 81a of the heat sink 81 via the heat conduction member 82. The heat propagated to the main body portion 81a of the heat sink 81 is propagated to the second horizontal portion 63 of the metal portion 36 via the support portion 81b of the heat sink 81. The heat propagated to the metal portion 36 is propagated to the pad 22 of the substrate 10 via the solder joint 70. The heat propagated to the pad 22 is propagated to the conductive layer 24 via the conductive wire 23. The heat propagated to the conductive layer 24 is diffused within the substrate 10 and released from the surface of the substrate 10.

[0180] According to such a configuration, as in the first embodiment, it is possible to improve the suppression of the defective condition of the substrate unit IB. In addition, according to the present embodiment, since the heat sink 81 is provided, the heat is easily moved from the electronic component 32 to the metal portion 36. Thus, it is possible to further improve the heat dissipation property of the substrate unit IB.

[0181] The above describes several embodiments and modifications. However, the embodiments and modifications are not limited to the above-described examples. For example, a plurality of embodiments or modifications can be combined with each other to be implemented. For example, the shape or the arrangement of the metal portion 36 is not limited to the above-described examples. The metal portion 36 can be provided at a corner portion of the package substrate 31. The conductive layer 53 can be omitted. Even if the conductive layer 53 is not provided, by a part of the heat emitted from the electronic component 32 being propagated to the metal portion 36, it is possible to improve the heat dissipation property of the substrate unit 1 compared to the case where the metal portion 36 is not provided.

[0182] According to at least one of the embodiments described above, a semiconductor device is provided with a substrate, an electronic component, a plurality of joining portions, and a first metal portion. The first metal portion includes a first portion extending along a first face of the substrate and a second portion extending along a first side face of the substrate. An area of the first metal portion when viewed in a first direction that is a thickness direction of the substrate is larger than a first joining portion included in the plurality of joining portions. According to such a configuration, it is possible to improve the configuration characteristics.

[0183] The above describes several embodiments of the present application, but these embodiments are suggested as examples and are not intended to limit the scope of the application. These embodiments can be implemented in other various ways, and various omissions, substitutions, and changes can be made within the scope of the gist of the application. These embodiments and modifications thereof are included in the scope or gist of the application, and are also included in the scope of the application and equivalents thereof recited in the claims.

Claims

1. A semiconductor device, wherein, Possessing: a substrate having a first surface, a second surface on the opposite side of the first surface, and a first side surface across a first edge of the first surface and a second edge of the second surface; an electronic component mounted to the second surface; a plurality of bonding portions provided to the first surface and including a first bonding portion; and a first metal portion including a first part extending along the first surface and a second part extending along the first side surface, the first metal portion having an area, as viewed in a first direction that is a thickness direction of the substrate, that is larger than the first bonding portion.

2. The semiconductor device according to claim 1, wherein the first part is connected to the second part.

3. The semiconductor device according to claim 1 or 2, wherein the second part spans the first edge and the second edge.

4. The semiconductor device according to claim 1 or 2, wherein the first edge extends in a second direction that intersects the first direction, the first metal portion is disposed at a position overlapping a central portion of the first edge in the second direction, as viewed in the first direction.

5. The semiconductor device according to claim 1 or 2, wherein the plurality of bonding portions include a second bonding portion adjacent to the first bonding portion in a second direction that intersects the first direction, a length of the second direction of the first metal portion is larger than a distance between centers of the first bonding portion and the second bonding portion.

6. The semiconductor device according to claim 1 or 2, wherein the first metal portion includes a third part connected to the second part and extending along the second surface.

7. The semiconductor device according to claim 1 or 2, wherein the substrate has a conductive layer extending in a planar shape at least in part, the first metal portion is connected to the conductive layer.

8. The semiconductor device according to claim 1 or 2, wherein the first bonding portion is a bonding portion closest to the first edge among the plurality of bonding portions, a distance in a third direction from a center of the substrate toward the first edge between the center of the substrate and the first metal portion is equal to or less than a distance in the third direction between the center of the substrate and the first bonding portion. Further possessing:

9. The semiconductor device according to claim 1 or 2, wherein a second metal portion disposed separately from the first metal portion, the substrate has a second side surface across a third edge of the first surface different from the first edge and a fourth edge of the second surface different from the second edge, the second metal portion includes a third part extending along the first surface and a fourth part extending along the second side surface, the second metal portion having an area, as viewed in the first direction, that is larger than the first bonding portion. Possessing:

10. A substrate unit, wherein, a circuit board; a semiconductor device mounted on the circuit board; and a solder joint fixing the circuit board and the semiconductor device, the circuit board has: a package substrate having a first surface facing the circuit board, a second surface on the opposite side of the first surface, and a first side surface across a first edge of the first surface and a second edge of the second surface; an electronic component mounted to the second surface; ​ ​ a plurality of bonding portions provided on the first surface and including a first bonding portion; and a first metal portion including a first portion extending along the first surface and a second portion extending along the first side surface, an area of the first metal portion as viewed in a first direction that is a thickness direction of the package substrate being larger than that of the first bonding portion, the solder joint being in contact with the first portion and the second portion of the first metal portion.

11. A method of manufacturing a substrate unit, wherein a semiconductor device is prepared, the semiconductor device having a first substrate including a first surface, a second surface on an opposite side of the first surface, and a first side surface across a first edge of the first surface and a second edge of the second surface, an electronic component mounted on the second surface, a plurality of bonding portions provided on the first surface and including a first bonding portion, and a first metal portion including a first portion extending along the first surface and a second portion extending along the first side surface, an area of the first metal portion as viewed in a first direction that is a thickness direction of the first substrate being larger than that of the first bonding portion, the semiconductor device is placed on a second substrate, a solder joint in contact with the first portion and the second portion of the first metal portion is formed.

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