Systems and methods for increasing throughput during voltage contrast inspection using points of interest and signals

Abstract

Systems and methods for inspecting a sample. Systems and methods may include determining a plurality of locations on a sample, each location corresponding to an inspection feature on the sample in a field of view (FOV); providing one or more charged particle beams to the sample, each charged particle beam being provided to a corresponding location of the plurality of locations; for each location, detecting one or more particle emissions caused by the charging of the corresponding location; and for each location, determining defect information of the sample based on the one or more detected particle emissions.

Description

Cross-reference to related applications

[0001] This application claims priority to U.S. Application 63 / 514,537, filed on July 19, 2023, which is incorporated herein by reference in its entirety. Technical Field

[0002] This article describes methods for improving throughput during voltage contrast inspection, particularly in the field of inspection and charged particle systems, using points of interest and signals. Background Technology

[0003] In the manufacturing process of integrated circuits (ICs), unfinished or completed circuit components are inspected to ensure they are manufactured according to the design and free of defects. Inspection systems using optical microscopes typically have a resolution as low as a few hundred nanometers; and this resolution is limited by the wavelength of light. As the physical dimensions of IC components continue to shrink to below 100 nanometers or even below 10 nanometers, inspection systems with higher resolution than those using optical microscopes are needed.

[0004] Charged particle (electron) beam microscopy (such as scanning electron microscopy (SEM) or transmission electron microscopy (TEM)) with resolutions as low as less than 1 nanometer serves as a practical tool for inspecting IC components with feature sizes smaller than 100 nanometers. Using SEM, electrons from a single primary electron beam or multiple primary electron beams can be focused onto a location of interest on the wafer being inspected. The primary electrons interact with the wafer and can be backscattered or cause the wafer to emit secondary electrons. The intensity of the electron beam, including backscattered and secondary electrons, can vary based on the properties of the wafer's internal and external structure, thus indicating whether the wafer has defects. Summary of the Invention

[0005] Embodiments of this disclosure provide systems and methods for increasing throughput during voltage contrast inspection using points of interest and signals. In some embodiments, the system, method, and non-transitory computer-readable medium may include determining a plurality of locations on a sample, each location corresponding to an inspection feature on the sample in a field of view (FOV); providing one or more charged particle beams to the sample, each charged particle beam being provided to a corresponding location among the plurality of locations; for each location, detecting one or more particle emissions caused by charging at the corresponding location; and for each location, determining defect information of the sample based on one or more detected particle emissions.

[0006] In some embodiments, the system, method, and nontransitory computer-readable medium may include determining a pattern of one or more inspection features on a sample in a field of view (FOV); charging the sample at one or more locations corresponding to the pattern of the one or more inspection features; scanning the sample at one or more locations corresponding to the pattern of the inspection features; detecting one or more particle emissions caused by charging at each location; and determining defect information of the sample based on the detected one or more particle emissions at each location. Attached Figure Description

[0007] Figure 1 This is a schematic diagram illustrating an exemplary electron beam inspection (EBI) system consistent with embodiments of the present disclosure.

[0008] Figure 2A The illustration shows a schematic diagram of an exemplary multi-beam system consistent with embodiments of the present disclosure. Figure 1 This is part of an exemplary charged particle beam inspection system.

[0009] Figure 2B This is a schematic diagram illustrating an exemplary single-beam system consistent with embodiments of the present disclosure. Figure 1 This is part of an exemplary charged particle beam inspection system.

[0010] Figure 3 This is an exemplary graph showing the yield of landing energy of secondary electrons relative to the primary electron beam, consistent with embodiments of the present disclosure.

[0011] Figure 4 This is a schematic diagram illustrating an exemplary voltage contrast response of a wafer consistent with embodiments of the present disclosure.

[0012] Figure 5 An exemplary process for inspecting samples, consistent with embodiments of this disclosure, is shown. Detailed Implementation

[0013] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, wherein, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations consistent with this disclosure. Rather, these implementations are merely examples of apparatuses and methods consistent with various aspects of the subject matter as set forth in the appended claims. For example, although some embodiments are described in the context of the use of electron beams, this disclosure is not limited thereto. Other types of charged particle beams can be applied similarly. Furthermore, other imaging systems, such as optical imaging, photoelectric detection, X-ray detection, extreme ultraviolet inspection, deep ultraviolet inspection, etc., can be used, which generate images of the corresponding types.

[0014] Electronic devices consist of circuits formed on a silicon wafer called a substrate. Many circuits can be formed together on the same silicon wafer and are called integrated circuits or ICs. The size of these circuits has been drastically reduced, allowing more circuits to be mounted on the substrate. For example, the IC chip in a smartphone can be as small as a fingernail but can include more than 2 billion transistors, each less than 1 / 1000th the size of a human hair.

[0015] Manufacturing these extremely small ICs is a complex, time-consuming, and expensive process, typically involving hundreds of individual steps. Even an error in a single step can result in a defective IC that renders it unusable. Therefore, one goal of the manufacturing process is to avoid such defects in order to maximize the number of functional ICs manufactured in the process, i.e., to increase the overall yield of the process.

[0016] A key component of increasing yield is monitoring the chip manufacturing process to ensure a sufficient number of functional ICs are produced. One way to monitor this process is to inspect it at each stage of chip circuit structure formation. This inspection can be performed using a scanning electron microscope (SEM). SEM can be used to image these extremely small structures, essentially taking "photographs" of the wafer structure. This image can be used to determine if the structure is formed correctly and in the correct location. If a defect is found, the process can be adjusted to make it less likely to recur. Defects can be generated during various stages of semiconductor processing. For the reasons explained above, it is crucial to detect defects early, accurately, and efficiently.

[0017] A Sequencing Electron Microscope (SEM) works similarly to a camera. A camera takes a picture by receiving and recording the brightness and color of light reflected or emitted from a person or object. A Sequencing Electron Microscope (SEM) takes a "picture" by receiving and recording the energy or number of electrons reflected or emitted from a structure. Before taking this "picture," an electron beam can be projected onto the structure, and as electrons are reflected or emitted ("leaving") from the structure, the SEM's detector can receive and record the energy or number of these electrons to generate an image. To take this "picture," some SEMs use a single electron beam (called a "single-beam SEM"), while others use multiple electron beams (called a "multi-beam SEM") to take multiple "pictures" of the wafer. By using multiple electron beams, the SEM can project more electron beams onto the structure to obtain these multiple "pictures," thus allowing more electrons to leave the structure. Therefore, the detector can receive more leaving electrons simultaneously and generate images of the wafer structure with greater efficiency and faster speed.

[0018] Typical voltage contrast (VC) inspection acquires a SEM image within the field of view (FOV) containing the features of interest on the sample. In a typical VC inspection, during SEM image acquisition, the sample is scanned with a beam of charged particles, and the features being inspected are either positively or negatively charged. The charging conditions are controlled by appropriately setting the scanning time and beam current of the primary electron beam. The charging conditions can also be controlled by the landing energy of the primary electron beam wave, which controls the yield of secondary electrons, thus positively or negatively charging the features on the wafer. A typical system can identify defects at the features based on the grayscale levels of these features.

[0019] Typical VC inspection systems are constrained. For example, they may scan the entire area within the FOV even if the feature of interest might be located in a small region of the sample. That is, the feature may be scattered across a region of the SEM image. Even if the point of interest on the sample might comprise a low percentage of the FOV, a typical system will scan the entire area within the FOV. These typical systems reduce productivity during inspection due to the time spent scanning areas without points of interest.

[0020] Additionally, SEM images containing characteristic grayscale levels need to be acquired before inspection. This inspection method results in low productivity during inspection due to the time required to obtain SEM images before inspection, to obtain SEM images of the entire area within the FOV, and due to the raster scanning nature of the inspection tool.

[0021] Typical VC inspection systems also suffer from tuning inaccuracies. In existing systems, the gray level of a feature needs to be fine-tuned to a certain value or range, and the VC of the feature is determined by the charging conditions at the feature. For example, the electron dose at the feature needs to be fine-tuned so that defects in the sample can be easily identified (e.g., by creating a clear contrast between the gray level and the gray level of a normal feature, or by creating a clear difference between the signal and the signal of a normal feature).

[0022] Charging conditions can be influenced by the structure and properties of the feature, the electric field surrounding the feature, and the electron dose per unit time introduced into the sample by the primary beam. Charging conditions can also be affected by the landing energy of the primary electron beam wave. These features possess parasitic parameters such as resistance and capacitance. In typical systems, properly charging a feature involves controlling the electric field around the feature, introducing optically induced leakage, tuning the scan rate, adjusting the beam current to adjust the electron dose per unit time on the feature, and controlling the landing energy on the sample. However, these typical methods of tuning charging conditions at the feature are imprecise and inefficient. For example, adjusting the scan rate to change the electron dose in the sample cannot be feasiblely fine-tuned.

[0023] The disclosed embodiments provide systems and methods for addressing some or all of these drawbacks by performing VC inspection based on points of interest and signals generated by the inspection system. For example, one or more charged particle beams can be directed to one or more inspection feature locations (e.g., points of interest) on the sample in a discrete scanning manner, rather than a typical line-by-line continuous scan. Advantageously, only the points of interest on the sample can be exposed to the charged particle beams.

[0024] In some embodiments, the system can adjust the scan rate of one or more charged particle beams based on whether the position in the FOV corresponds to an inspection feature. For example, the system can decrease the scan rate on the inspection feature (and increase the dwell time) and increase the scan rate in the region between each inspection feature. This approach is particularly advantageous when the inspection features are dispersed on the sample.

[0025] In some embodiments, the controller or signal processing system can determine defect information based on one or more signals generated by the inspection system. For example, each signal corresponding to an inspection feature can vary based on the amount of accumulated charge on the inspection feature. In a typical inspection system, the system can generate a voltage contrast image and analyze the voltage contrast image to determine whether the feature on the sample includes a defect. Advantageously, the disclosed embodiments can determine defect information without using one or more signals to construct any image of the inspection feature, thereby increasing productivity during VC inspection.

[0026] For clarity, the relative dimensions of the components in the accompanying drawings may be exaggerated. Throughout the following description of the drawings, the same or similar reference numerals refer to the same or similar components or entities, and only differences relative to the various embodiments are described.

[0027] As used herein, unless otherwise specified, the term "or" covers all possible combinations except those that are not feasible. For example, if a descriptive component may include A or B, then unless otherwise specified or not feasible, the component may include A or B or A and B. As a second example, if a descriptive component may include A, B, or C, then unless otherwise specified or not feasible, the component may include A or B or C, or A and B, or A and C, or B and C, or A and B and C.

[0028] Some embodiments can be described in the context of providing detectors and detection methods in systems utilizing electron beams without limiting the scope of this disclosure. However, this disclosure is not limited thereto. Other types of charged particle beams can be applied similarly. Furthermore, the systems and methods used for detection can be used in other imaging systems, such as optical imaging, photon detection, X-ray detection, ion detection, etc.

[0029] Figure 1 An exemplary electron beam inspection (EBI) system 100 consistent with embodiments of this disclosure is illustrated. The EBI system 100 can be used for imaging. Figure 1 As shown, the EBI system 100 includes a main chamber 101, a loading / locking chamber 102, an electron beam tool 104, and an equipment front-end module (EFEM) 106. The electron beam tool 104 is located within the main chamber 101. The EFEM 106 includes a first loading port 106a and a second loading port 106b. The EFEM 106 may include multiple additional loading ports. The first loading port 106a and the second loading port 106b receive a front-opening wafer transfer cassette (FOUP) containing wafers (e.g., one or more semiconductor wafers made of (multiple) other materials) or samples (wafers and samples are interchangeable) to be inspected. A “batch” is a plurality of wafers that can be processed as a single load.

[0030] One or more robotic arms (not shown) in EFEM 106 can transport the wafer to loading / locking chamber 102. Loading / locking chamber 102 is connected to a loading / locking vacuum pump system (not shown), which removes gas molecules from loading / locking chamber 102 to achieve a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) can transport the wafer from loading / locking chamber 102 to main chamber 101. Main chamber 101 is connected to a main chamber vacuum pump system (not shown), which removes gas molecules from main chamber 101 to achieve a second pressure below the first pressure. After reaching the second pressure, the wafer is inspected by electron beam tool 104. Electron beam tool 104 can be a single-beam system or a multi-beam system.

[0031] The controller 109 is electronically connected to the electron beam tool 104. The controller 109 may be a computer configured to perform various controls of the EBI system 100. Although in Figure 1 The controller 109 is shown outside the structure including the main chamber 101, the loading / locking chamber 102 and the EFEM 106, but it should be understood that the controller 109 may be part of the structure.

[0032] In some embodiments, controller 109 may include one or more processors (not shown). A processor may be a general-purpose or specific electronic device capable of manipulating or processing information. For example, a processor may include any number of central processing units (or “CPU”), graphics processing units (or “GPU”), optical processors, programmable logic controllers, microcontrollers, microprocessors, digital signal processors, intellectual property (IP) cores, programmable logic arrays (PLAs), programmable array logic (PALs), general-purpose array logic (GALs), complex programmable logic devices (CPLDs), field-programmable gate arrays (FPGAs), system-on-a-chip (SoCs), application-specific integrated circuits (ASICs), and any combination of any type of circuitry capable of data processing. A processor may also be a virtual processor, comprising one or more processors distributed across multiple machines or devices coupled via a network.

[0033] In some embodiments, controller 109 may also include one or more memories (not shown). The memories can be general-purpose or specific electronic devices capable of storing processor-accessible (e.g., via a bus) code and data. For example, the memories can include any number of random access memory (RAM), read-only memory (ROM), optical discs, magnetic disks, hard disks, solid-state drives, flash drives, secure digital cards (SD cards), memory sticks, compact flash (CF) cards, or any combination of any type of storage device. The code can include an operating system (OS) and one or more applications (or "applications") for a specific task. The memories can also be virtual memory, which includes one or more memories distributed across multiple machines or devices coupled via a network.

[0034] Embodiments of this disclosure can provide a single charged particle beam imaging system (“single-beam system”). Compared to a single-beam system, a multi-charged particle beam imaging system (“multi-beam system”) can be designed to optimize throughput for different scanning modes. Embodiments of this disclosure provide a multi-beam system with the ability to optimize throughput for different scanning modes by using beam arrays with different geometries and adapting to different throughput and resolution requirements.

[0035] Now for reference Figure 2A , Figure 2A This is a schematic diagram illustrating an exemplary electron beam tool 104 consistent with embodiments of the present disclosure, the electron beam tool 104 including as... Figure 1 The electron beam tool 104 is a multi-beam inspection tool that is part of the EBI system 100. In some embodiments, the electron beam tool 104 can operate as a single-beam inspection tool. Figure 1 This is part of the EBI system 100. The multi-beam electron beam tool 104 (also referred to herein as apparatus 104) includes an electron source 201, a coulomb aperture plate (or “gun aperture plate”) 271, a converging lens 210, a source conversion unit 220, a primary projection system 230, a motorized platform 209, and a sample holder 207 supported by the motorized platform 209 to hold a sample 208 (e.g., a wafer or photomask) to be inspected. The multi-beam electron beam tool 104 may also include a secondary projection system 250 and an electron detection device 240. The primary projection system 230 may include an objective lens 231. The electron detection device 240 may include multiple detection elements 241, 242, and 243. A beam splitter 233 and a deflection scanning unit 232 may be positioned within the primary projection system 230.

[0036] The electron source 201, coulomb aperture plate 271, converging lens 210, source conversion unit 220, beam splitter 233, deflection scanning unit 232, and primary projection system 230 can be aligned with the primary optical axis 204 of device 104. The secondary projection system 250 and electronic detection device 240 can be aligned with the secondary optical axis 251 of device 104.

[0037] The electron source 201 may include a cathode (not shown) and an extractor or anode (not shown), wherein, during operation, the electron source 201 is configured to emit primary electrons from the cathode, and the primary electrons are extracted or accelerated by the extractor and / or the anode to form a primary electron beam 202, which forms a primary beam cross (virtual or real) 203. The primary electron beam 202 can be visualized as being emitted from the primary beam cross 203.

[0038] Source conversion unit 220 may include an image forming element array (not shown), an aberration compensator array (not shown), a beam-limiting aperture array (not shown), and a pre-bent micro-polarizer array (not shown). In some embodiments, the pre-bent micro-polarizer array deflects multiple primary beam waves 211, 212, 213 of the primary electron beam 202 so that they enter the beam-limiting aperture array, the image forming element array, and the aberration compensator array normally. In some embodiments, device 104 may operate as a single-beam system, thereby generating a single primary beam wave. In some embodiments, converging lens 210 is designed to focus the primary electron beam 202 into a parallel beam and to be normally incident on source conversion unit 220. The image forming element array may include multiple micro-polarizers or microlenses to influence the multiple primary beam waves 211, 212, 213 of the primary electron beam 202 and to form multiple parallel images (virtual or real) of the primary beam cross 203, one parallel image for each of the primary beam waves 211, 212, and 213. In some embodiments, the aberration compensator array may include a field curvature compensator array (not shown) and an astigmatism compensator array (not shown). The field curvature compensator array may include a plurality of microlenses to compensate for field curvature aberrations of primary beams 211, 212, and 213. The astigmatism compensator array may include a plurality of micro-astigmatism reducers to compensate for astigmatic aberrations of primary beams 211, 212, and 213. A beam-limiting aperture array may be configured to limit the diameter of each primary beam 211, 212, and 213. Figure 2A Three primary beams 211, 212, and 213 are shown as examples, and it should be understood that the source conversion unit 220 can be configured to form any number of primary beams. The controller 109 can be connected to... Figure 1Various components of the EBI system 100, such as the source conversion unit 220, the electronic inspection device 240, the primary projection system 230, or the motorized platform 209. In some embodiments, as explained in further detail below, the controller 109 can perform various image and signal processing functions. The controller 109 can also generate various control signals to manage the operation of the charged particle beam inspection system.

[0039] Converging lens 210 is configured to focus primary electron beam 202. Converging lens 210 can also be configured to adjust the current of primary beams 211, 212, and 213 downstream of source conversion unit 220 by changing the focusing capability of converging lens 210. Alternatively, the current can be changed by altering the radial dimension of the limiting aperture within the aperture array corresponding to each primary beam. The current can be changed by altering the radial dimension of the limiting aperture and the focusing capability of converging lens 210. Converging lens 210 can be an adjustable converging lens, configured such that the position of its first principal plane is movable. The adjustable converging lens can be configured to be magnetic, which can cause off-axis beams 212 and 213 to irradiate source conversion unit 220 at a rotational angle. The rotational angle varies with the focusing capability or the position of the first principal plane of the adjustable converging lens. Converging lens 210 can be an anti-rotation converging lens, configured to maintain a constant rotational angle while the focusing capability of converging lens 210 is changed. In some embodiments, the converging lens 210 may be an adjustable anti-rotation converging lens, wherein the rotation angle does not change when its focusing capability and the position of the first principal plane change.

[0040] Objective lens 231 can be configured to focus beams 211, 212, and 213 onto sample 208 for inspection, and in the current embodiment, three probe spots 221, 222, and 223 can be formed on the surface of sample 208. Coulomb aperture plate 271 is configured in operation to block peripheral electrons of the primary electron beam 202 to reduce the Coulomb effect. The Coulomb effect can increase the size of each of the probe spots 221, 222, and 223 of the primary beams 211, 212, and 213, thus reducing inspection resolution.

[0041] Beam splitter 233 can be, for example, a Wien filter, including an electrostatic deflector that generates electrostatic dipole fields and magnetic dipole fields. Figure 2A (Not shown in the diagram). In operation, beam splitter 233 can be configured to apply electrostatic forces to the individual electrons of primary beams 211, 212, and 213 via an electrostatic dipole field. The electrostatic forces are equal in magnitude but opposite in direction to the magnetic forces applied to the individual electrons by the magnetic dipole field of beam splitter 233. Primary beams 211, 212, and 213 can therefore pass through beam splitter 233 at least substantially straight with a deflection angle of at least substantially zero.

[0042] Deflection scanning unit 232 is configured in operation to deflect primary beams 211, 212, and 213 to scan probe spots 221, 222, and 223 in various scanning regions of a segment of the surface of sample 208. In response to the primary beams 211, 212, and 213 or probe spots 221, 222, and 223 being incident on sample 208, electrons emerge from sample 208 and generate three secondary electron beams 261, 262, and 263. Each of the secondary electron beams 261, 262, and 263 typically comprises secondary electrons (electron energy ≤ 50 eV) and backscattered electrons (electron energy between 50 eV and the landing energy of the primary beams 211, 212, and 213). Beam splitter 233 is configured to deflect the secondary electron beams 261, 262, and 263 toward secondary projection system 250. The secondary projection system 250 then focuses secondary electron beams 261, 262, and 263 onto the detection elements 241, 242, and 243 of the electron detection device 240. The detection elements 241, 242, and 243 are arranged to detect the corresponding secondary electron beams 261, 262, and 263 and generate corresponding signals, which are sent to the controller 109 or a signal processing system (not shown), for example, to construct an image of the corresponding scan area of ​​the sample 208.

[0043] In some embodiments, detection elements 241, 242, and 243 detect corresponding secondary electron beams 261, 262, and 263, respectively, and generate corresponding intensity signal outputs (not shown) to an image processing system (e.g., controller 109). In some embodiments, each detection element 241, 242, and 243 may include one or more pixels. The intensity signal output of the detection element may be the sum of signals generated by all pixels within the detection element.

[0044] In some embodiments, controller 109 may include an image processing system comprising an image acquirer (not shown) and a storage device (not shown). The image acquirer may include one or more processors. For example, the image acquirer may include a computer, server, mainframe, terminal, personal computer, any kind of mobile computing device, or a combination thereof. The image acquirer may be communicatively coupled to the electronic inspection device 240 of device 104 via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, Internet, wireless network, radio, or a combination thereof. In some embodiments, the image acquirer may receive signals from the electronic inspection device 240 and may construct an image. The image acquirer may thus acquire an image of sample 208. The image acquirer may also perform various post-processing functions, such as generating contour lines, overlaying indicators on the acquired image, etc. The image acquirer may be configured to perform adjustments such as brightness and contrast of the acquired image. In some embodiments, the storage device may be a storage medium such as a hard disk, flash drive, cloud storage device, random access memory (RAM), or other types of computer-readable storage. The storage device can be coupled to the image acquisition device and can be used to save the original image data of the scan as the original image and the post-processed image.

[0045] In some embodiments, the image acquirer may acquire one or more images of a sample based on imaging signals received from the electronic detection device 240. The imaging signals may correspond to a scanning operation for imaging charged particles. The acquired image may be a single image comprising multiple imaging regions. The single image may be stored in a storage device. The single image may be an original image that can be divided into multiple regions. Each region may include an imaging region containing features of the sample 208. The acquired images may include multiple images of a single imaging region of the sample 208 sampled multiple times over a time series. The multiple images may be stored in a storage device. In some embodiments, the controller 109 may be configured to perform image processing steps using multiple images of the same location on the sample 208.

[0046] In some embodiments, controller 109 may include a measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary electrons. The electron distribution data collected during the detection time window can be combined with corresponding scan path data for each of the primary beams 211, 212, and 213 incident on the wafer surface to reconstruct an image of the wafer structure to be inspected. The reconstructed image can be used to reveal various features of the internal or external structure of sample 208, and thus can be used to reveal any defects that may exist in the wafer.

[0047] In some embodiments, the controller 109 may control the motorized platform 209 to move the sample 208 during examination. In some embodiments, the controller 109 may enable the motorized platform 209 to continuously move the sample 208 in one direction at a constant speed. In other embodiments, the controller 109 may enable the motorized platform 209 to change the speed of movement of the sample 208 over time according to the steps of the scanning process.

[0048] although Figure 2A The apparatus 104 is shown using three primary electron beams, but it is to be understood that the apparatus 104 may use one, two, or more primary electron beams. This disclosure does not limit the number of primary electron beams used in the apparatus 104. In some embodiments, the apparatus 104 may be a SEM for photolithography. In some embodiments, the electron beam tool 104 may be a single-beam system or a multi-beam system.

[0049] For example, such as Figure 2B As shown, consistent with embodiments of this disclosure, the electron beam tool 100B (also referred to herein as apparatus 100B) can be a single-beam inspection tool used in the EBI system 100. Apparatus 100B includes a wafer holder 136 supported by a motorized platform 134 for holding a wafer 150 to be inspected. The electron beam tool 100B includes an electron emitter that may include a cathode 103, an anode 121, and a gun aperture 122. The electron beam tool 100B also includes a beam-limiting aperture 125, a converging lens 126, a cylindrical aperture 135, an objective lens assembly 132, and a detector 144. In some embodiments, the objective lens assembly 132 may be a modified SORIL lens, including a pole piece 132a, a control electrode 132b, a deflector 132c, and an excitation coil 132d. In the imaging process, an electron beam 161 emitted from the tip of cathode 103 can be accelerated by the voltage of anode 121, pass through gun aperture 122, beam-limiting aperture 125, converging lens 126, and focused into probe spot 170 by a modified SORIL lens, impacting the surface of wafer 150. Probe spot 170 can be scanned on the surface of wafer 150 by deflectors (such as deflector 132c or other deflectors in the SORIL lens). Detector 144 can collect secondary or scattered primary particles emitted from the wafer surface, such as secondary electrons or scattered primary electrons, to determine the beam intensity and enable the reconstruction of an image of the region of interest on wafer 150.

[0050] An image processing system 199 may also be provided, including an image acquirer 120, a storage device 130, and a controller 109. The image acquirer 120 may include one or more processors. For example, the image acquirer 120 may include a computer, server, mainframe, terminal, personal computer, any kind of mobile computing device, or a combination thereof. The image acquirer 120 can be connected to the detector 144 of the electron beam tool 100B via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, Internet, wireless network, radio, or a combination thereof. The image acquirer 120 can receive signals from the detector 144 and can construct an image. The image acquirer 120 can thus acquire an image of the wafer 150. The image acquirer 120 can also perform various post-processing functions, such as generating contour lines, overlaying indicators on the acquired image, etc. The image acquirer 120 can be configured to perform adjustments such as brightness and contrast of the acquired image. The storage device 130 may be a storage medium such as a hard disk, random access memory (RAM), cloud storage device, or other types of computer-readable storage. Storage device 130 may be coupled to image acquirer 120 and may be used to store scanned original image data as the original image and post-processed images. Image acquirer 120 and storage device 130 may be connected to controller 109. In some embodiments, image acquirer 120, storage device 130 and controller 109 may be integrated into a single electronic control unit.

[0051] In some embodiments, the image acquirer 120 may acquire one or more images of a sample based on an imaging signal received from the detector 144. The imaging signal may correspond to a scanning operation for imaging charged particles. The acquired image may be a single image comprising multiple imaging regions, which may contain various features of the wafer 150. The single image may be stored in the storage device 130. Imaging may be performed based on imaging frames.

[0052] The converging and illumination optics of an electron beam tool may include or be supplemented by an electromagnetic quadrupole electron lens. For example, such as Figure 2B As shown, the electron beam tool 100B may include a first quadrupole lens 148 and a second quadrupole lens 158. In some embodiments, the quadrupole lenses are used to control the electron beam. For example, the first quadrupole lens 148 may be controlled to adjust the beam current, and the second quadrupole lens 158 may be controlled to adjust the beam spot size and beam shape.

[0053] Figure 2B The illustration depicts a charged particle beam device in which the inspection system can use a single primary beam, which can be configured to generate secondary electrons by interacting with a wafer 150. A detector 144 can be positioned along an optical axis 105, as shown. Figure 2BAs in the illustrated embodiment, the primary electron beam can be configured to propagate along the optical axis 105. Therefore, the detector 144 can include a hole at its center, allowing the primary electron beam to pass through and reach the wafer 150.

[0054] Figure 3 An exemplary graph illustrating the yield of secondary electrons relative to the landing energy of a primary electron beam wave, consistent with embodiments of the present disclosure, is shown. This graph illustrates the relationship between the landing energy of the primary electron beam (e.g., primary electron beam 202 of FIG. 2) and the yield of the secondary electron beam. The yield indicates the number of secondary electrons generated in response to the impact of primary electrons. For example, a yield greater than 1.0 indicates that more secondary electrons may be generated than the number of primary electrons landing on the wafer. Similarly, a yield less than 1.0 indicates that fewer secondary electrons may be generated in response to the impact of primary electrons.

[0055] like Figure 3 As shown in the graph, when the landing energy of primary electrons is in the range of E1 to E2, more secondary electrons may leave the wafer surface than land on it, which may result in a positive potential at the wafer surface. In some embodiments, defect inspection can be performed within the aforementioned landing energy range, which is referred to as "positive mode". Electron beam tools (e.g., electron beam tool 104 of Figure 2) can generate darker voltage contrast images of the device structure with a more positive surface potential because the inspection device (e.g., inspection device 240 of Figure 2) can receive fewer secondary electrons (see Figure 2). Figure 4 ).

[0056] When the landing energy is below E1 or above E2, fewer electrons may leave the wafer surface, resulting in a negative potential at the wafer surface. In some embodiments, defect inspection can be performed within this landing energy range, which is referred to as "negative mode." Electron beam tools (such as electron beam tool 104 in Figure 2) can generate brighter voltage contrast images of device structures with a more negative surface potential because inspection devices (such as inspection device 240 in Figure 2) can receive more secondary electrons (see...). Figure 4 ).

[0057] In some embodiments, the landing energy of the primary electron beam can be controlled by the total bias between the electron source and the wafer.

[0058] Figure 4The illustration shows a schematic diagram of the voltage contrast response of a wafer consistent with embodiments of the present disclosure. In some embodiments, physical and electrical defects in the wafer (e.g., resistive short circuits and open circuits, defects in deep trench capacitors, end-of-line (BEOL) defects, etc.) can be detected using a voltage contrast method of a charged particle inspection system. Defect detection using voltage contrast images can be performed using a pre-scanning process (i.e., charging, diffuse, neutralizing, or preparation process) in which charged particles are applied to the wafer region to be inspected (e.g., sample 208 of FIG. 2) before inspection.

[0059] In some embodiments, an electron beam tool (e.g., electron beam tool 104 of FIG. 2) can be used to detect defects in the internal or external structure of a wafer by irradiating the wafer with multiple beam waves of a primary electron beam (e.g., multiple beam waves 211, 212, or 213 of primary electron beam 202 of FIG. 2) and measuring the wafer's voltage contrast response to the irradiation. In some embodiments, the wafer may include a test device region 420 developed on a substrate 410. In some embodiments, the test device region 420 may include multiple device structures 430 and 440 separated by an insulating material 450. For example, device structure 430 is attached to the substrate 410. In contrast, device structure 440 is separated from the substrate 410 by the insulating material 450, such that a thin insulating structure 470 (e.g., a thin oxide) exists between device structure 440 and substrate 410.

[0060] An electron beam tool can generate secondary electrons from the surface of the test device region 420 by scanning the surface of the test device region 420 with multiple beam waves of a primary electron beam (e.g., secondary electron beams 261, 262, or 263 in Figure 2). As explained above, when the landing energy of the primary electrons is between E1 and E2 (i.e., Figure 3 (If the yield is greater than 1.0), more electrons may leave the wafer surface than land on it, thus generating a positive potential at the wafer surface.

[0061] like Figure 4 As shown, a positive potential may accumulate at the wafer surface. For example, after an electron beam tool scans the test device region 420 (e.g., during a pre-scan process), device structure 440 may retain more positive charge because it is not connected to an electrical ground in substrate 410, thus generating a positive potential at the surface of device structure 440. In contrast, primary electrons applied to device structure 430 with the same landing energy (i.e., the same yield) may result in less positive charge remaining in device structure 430 because the positive charge may be neutralized by electrons supplied through connection to substrate 410.

[0062] An image processing system for an electron beam tool (e.g., controller 109 of FIG. 2) can generate voltage contrast images 435 and 445 corresponding to device structures 430 and 440, respectively. For example, device structure 430 is short-circuited to ground and may not retain accumulated positive charge. Therefore, when the primary electron beam wave lands on the wafer surface during inspection, device structure 430 may repel more secondary electrons, resulting in a brighter voltage contrast image. In contrast, because device structure 440 is not connected to substrate 410 or any other ground, device structure 440 may retain the accumulation of positive charge. This accumulation of positive charge may cause device structure 440 to repel fewer secondary electrons during inspection, resulting in a darker voltage contrast image.

[0063] An electron beam tool (e.g., the multi-beam electron beam tool 104 of Figure 2) pre-scans the wafer surface by supplying electrons to build up a potential on the wafer surface. After pre-scanning the wafer, the electron beam tool can acquire images of multiple dies within the wafer. In some embodiments, defects can be detected by comparing the differences in voltage contrast images from multiple dies. In some embodiments, defects can be identified by imaging the same location (e.g., point of interest) in different dies and comparing the voltage contrast images (e.g., gray levels in the images) of the same location in different dies. In some embodiments, defects can be identified by imaging the same location in different regions of the same die (where these regions have the same structure or layout) and comparing the voltage contrast images of different regions of the same die. If the difference in voltage contrast or gray level (e.g., different surface potentials due to different electrical properties of the point of interest) exceeds a predefined threshold, a defect can be identified. The pre-scan is applied to the wafer, assuming that the surface potential built up on the wafer surface during the pre-scan will be retained during inspection and will remain above the detection threshold of the electron beam tool.

[0064] In some embodiments, the effects of leakage current may occur in structures with improperly formed materials or high-resistivity metal layers, such as tungsten plugs and cobalt silicide (e.g., CoSi, CoSi2, Co2Si, Co3Si, etc.) layers between the source or drain regions of a field-effect transistor (FET).

[0065] A defective etching process can leave a thin oxide layer, leading to undesirable electrical blockage (e.g., an open circuit) between two structures intended for electrical connection (e.g., device structure 440 and substrate 410). For example, device structures 430 and 440 may be designed to contact substrate 410 and function identically, but due to manufacturing errors, an insulator structure 470 may be present in device structure 440. In this case, the insulator structure 470 can represent a defect susceptible to breakdown effects.

[0066] Now for reference Figure 5 An exemplary process 500 for inspecting samples, consistent with embodiments of this disclosure. It should be understood that process 500 can be performed in multi-beam environments (e.g.,...). Figure 2A Electron beam tool 104) or single-beam environment (e.g., electron beam tool 104) or single-beam environment (e.g.) Figure 2B Executed in the electron beam tool 104.

[0067] In step 502, the system (e.g.) Figure 2A Electron beam tool 104 Figure 2B The electron beam tool 104 can determine the sample (e.g. Figure 2A Sample 208 Figure 2B Multiple locations on the wafer 150, each location corresponding to an inspection feature on the sample in the field of view (FOV).

[0068] In some embodiments, each location in the FOV corresponding to an inspection feature on the sample can be determined based on layout data. In some embodiments, the feature pattern of the sample can be a layout design, which can be stored in a layout file of the wafer design. The layout file can be in Graphical Database System (GDS) format, Graphical Database System II (GDS II) format, Open Art System Exchange Standard (OASIS) format, Caltech Intermediate Format (CIF), etc. The wafer design can include patterns or structures for inclusion on the wafer. The pattern or structure can be a mask pattern for transferring features from a lithographic mask or mask stencil to the wafer. In some embodiments, the layout in GDS or OASIS format, etc., can include feature information stored in a binary file format, representing planar geometry, text, and other information related to the wafer design. In some embodiments, the layout design can correspond to the FOV of an inspection system (e.g., the FOV of the inspection system can include one or more layout structures of the layout design).

[0069] For example, the pattern of a sample (including periodic or repeating patterns of features) can be obtained from layout data. In some embodiments, artificial intelligence (AI) and machine learning algorithms can be used to streamline the scan path for pattern acquisition and inspection, thereby further improving inspection efficiency. In some embodiments, AI and machine learning can be used to learn the pattern of a sample based on previously acquired image or layout data.

[0070] In some embodiments, sample layout data may be unavailable, or the sample pattern may be unknown. In these cases, the inspection system may scan a portion of the sample and generate at least one image based on the scanned portion. The inspection system may learn a feature pattern on the sample based on the image (e.g., based on a periodic or repeating pattern of features). In some embodiments, AI and machine learning algorithms may be used to streamline the scanning path for pattern acquisition and inspection, further improving inspection efficiency. In some embodiments, AI and machine learning may be used to learn the sample pattern based on previously acquired images.

[0071] In some embodiments, the system can align the sample with the inspection tool based on a known pattern of the sample (e.g., the sample can be aligned with the inspection tool such that, based on the pattern, line features have the correct spacing between each line and are oriented in the correct direction). In some embodiments, the system can scan the pattern on the sample (e.g., even if the sample pattern is known or learned) to facilitate sample alignment. In some embodiments, the alignment of the sample with the inspection tool may include adjusting a platform (e.g., ... Figure 2A Mobile platform 209 Figure 2B (The mobile platform 134), adjusting samples, adjusting scanning settings, etc.

[0072] In some embodiments, the location corresponding to the inspected feature may include multiple locations around or near the inspected feature to account for misalignment errors. In some embodiments, the system may determine multiple locations around or near the inspected feature instead of scanning the entire area of ​​the field of view (FOV) to improve inspection throughput. In some embodiments, the system may determine multiple locations such that a smaller area of ​​the sample covering the point of interest can be scanned. The system can generate SEM images of these scanned smaller areas, and voltage contrast checks can be used to identify features in the images, and the gray levels of the features can be compared to determine the presence of any defects. Therefore, throughput can be improved because only a portion of the FOV is scanned, rather than the entire area within the FOV.

[0073] In step 504, the system may provide one or more beams of charged particles (e.g., ...) to the sample. Figure 2A The primary electron beam 202 has primary beam waves 211, 212, and 213. Figure 2B The primary electron beam 161 is provided to a corresponding location among a plurality of locations. In some embodiments, before providing one or more charged particle beams to the sample, the system's light source (e.g., an ACC module) can be configured to emit one or more beams (e.g., laser beams) at corresponding locations among the plurality of locations. For example, the emitted beams can illuminate points of interest on the sample, thereby adjusting or controlling the accumulated charge on the points of interest (e.g., charging the points of interest).

[0074] For example, one or more charged particle beams can be guided to the inspection feature locations (e.g., points of interest) on the sample in a discrete scanning manner, rather than the typical line-by-line continuous scanning. Advantageously, only the points of interest on the sample can be exposed to the charged particle beams, thereby increasing throughput.

[0075] In some embodiments, the system can adjust the scan rate of one or more charged particle beams based on whether the position in the FOV corresponds to an inspection feature. For example, the system can decrease the scan rate on the inspection feature (and increase the dwell time) and increase the scan rate in the region between each inspection feature. This approach is particularly advantageous when the inspection features are dispersed on the sample.

[0076] In step 506, the system can detect particle emission caused by the adjustment charge at the corresponding location for each location (e.g., Figure 2A The secondary electron beams 261, 262, and 263). As discussed above, beam splitters (e.g. Figure 2A The beam splitter 233 can be configured to point toward a secondary projection system (e.g., Figure 2A The secondary projection system 250 deflects the secondary electron beam (e.g., the secondary projection system 250) Figure 2A The secondary electron beams are 261, 262, and 263. The secondary projection system can then focus the secondary electron beams onto an electron detection device (e.g., ...). Figure 2A The detection element (e.g., of the electronic testing equipment 240) Figure 2A The detection elements (241, 242, and 243) are used to detect the corresponding secondary electron beam.

[0077] The system can generate multiple signals, each corresponding to a particle emission from multiple particle emissions. For example, a detection element can generate a corresponding signal.

[0078] The system can analyze multiple signals. In some embodiments, the generated signals can be sent to a controller (e.g., Figure 2A The controller 109 or signal processing system is used for analysis.

[0079] In some embodiments, resistance-capacitance (RC) data can be obtained from the generated signal and can be used to determine certain charge characteristics of the feature (e.g., whether the feature on the sample is grounded, open-circuited, short-circuited, etc.). In some embodiments, the charged particle beam may need to remain at each feature on the sample for a predefined time period. During the predefined time period, the detection system can sample the generated signal multiple times to determine the dynamic properties of the feature on the sample (e.g., voltage change versus time). Based on this set of data, rather than a single data point of a signal, the system can obtain a better estimate of the RC value of the feature. During this time period, the beam current intensity can be constant or modulated (e.g., pulsed modulation). Modulation should be synchronized with the sampling in the detection channel. The light illuminating the sample can also be constant or modulated. If the light illuminating the sample is modulated, the modulation should also be synchronized with the sampling of the detection system.

[0080] In step 508, the system can determine defect information of the sample based on the detected particle emission for each location of interest. In some embodiments, the controller or signal processing system can determine the defect information (e.g., whether an inspection feature contains a defect or is a normal operating feature) based on multiple analyzed signals. For example, each signal corresponding to an inspection feature can vary based on the amount of accumulated charge on the inspection feature. In a typical existing inspection system, the system can generate a voltage contrast image and analyze the voltage contrast image to determine whether a feature on the sample includes a defect. When the signal is above or below a certain threshold, the controller can determine that the corresponding inspection feature includes a defect. Advantageously, the controller can determine defect information without using signals to construct any image of the inspection feature.

[0081] In some embodiments, the system can modulate the beam current to provide greater flexibility and increase throughput during inspection. Typical systems adjust the scan rate to adjust the electron dose on sample features. However, scan rate adjustment cannot be fine-tuned. The disclosed embodiments can adjust the electron dose of the inspected features (e.g., by tuning the electron beam source to change the beam current, by using a fast blanking device, by using advanced charge control (ACC), etc.) to improve the distinction between signals corresponding to defects on the sample and signals corresponding to normal features on the sample. For example, an ACC module can be used to direct a beam (such as a laser beam) onto the inspected feature to control charge buildup due to effects such as photoconductivity, photoelectric, or thermal effects.

[0082] The disclosed embodiments are particularly advantageous and time-saving when points of interest are spaced further apart on the sample, as it eliminates the need to scan the regions between points of interest on the sample. Furthermore, since only the signals at the points of interest are measured, rather than analyzing the entire SEM image of the sample, the amount of data that needs to be processed during inspection is reduced. An additional benefit of this data reduction is that any algorithms used in the system can be significantly simplified, which can help reduce the data analysis load on the back-end system and the data transfer load from the detection channel to the image computer. The inspection algorithm can even be run by a low-power processor on the detection channel side. This advantage contributes to improved system power efficiency.

[0083] Because the disclosed embodiments scan only the scattering points of interest on the wafer, rather than scanning the entire wafer area and obtaining a SEM image of the entire wafer area, the throughput of single-beam VC inspection can be increased by at least one to two orders of magnitude. Efficiency factor This can be used to describe an increase in production volume. In a single-beam system, if a typical VC check can be achieved... If the production volume (e.g., the sample area inspected per unit time) is high, then the method of the disclosed embodiments can increase the production volume to [a higher level]. As discussed above, in the disclosed embodiments, it is not necessary to generate an image of the sample during inspection. Only the detection signal level (e.g., corresponding to the grayscale level of the SEM image) of the specific SEM image pixel at the point of interest needs to be obtained. Similarly, in a multi-beam system, multiple electron beams can scan the point of interest simultaneously, which can further increase throughput. Moreover, in a multi-beam system, each electron beam can have a partially independent deflection system, allowing each electron beam to be directed to a separate point of interest on the sample.

[0084] When migrating from a single-beam system to a multi-beam system, the disclosed embodiments offer more benefits than typical systems. For example, the production volume of the multi-beam systems of the disclosed embodiments can be... ,in It is the number of beams in a multi-beam system. The efficiency factor increases if the beam grid formation and the scanning actions of all beams are properly arranged. It can approach 1. In the multi-beam system of the disclosed embodiments, each beam requires at least a partially independent deflection system (e.g., not sharing the same deflection system) such that each beam can have at least partially independent scanning action. That is, each beam can scan and move in different directions to reach a corresponding target, rather than moving synchronously together, while still being synchronized with the detection system. In some embodiments, the disclosed multi-beam system can be a multi-column system such that each charged particle beam has at least a partially independent deflection system.

[0085] An additional advantage of the disclosed embodiments is that, since only a limited area of ​​the sample is exposed to charged particles, the total electron dose on the sample may be lower than in existing methods. Furthermore, because only the point of interest is exposed to charged particles, sample charging or grounding issues may be less severe than in existing methods. This may also cause less damage to the sample. The signal-to-noise ratio (SNR) during inspection can also be improved. To further improve the SNR, the disclosed embodiments can increase the beam current during the charging or signal acquisition phase without charging problems. This improved SNR can further increase detection sensitivity and reduce false defect detection, thereby increasing throughput. This improvement may correspond to an additional efficiency factor greater than 1. .

[0086] In the disclosed embodiments, if the current single-beam production rate is Then the overall production capacity can be increased from m to as high as In some embodiments, the disclosed VC inspection methods in multi-beam, multi-row, or single-beam environments can be used to improve VC inspection in the production line of a foundry's R&D line.

[0087] Consistent with the embodiments in this disclosure, a non-transitory computer-readable medium may be provided for storing data for a controller (e.g., Figure 1 The controller 109) contains instructions for its processor to control electron beam tools or other systems and other systems or components of the server. These instructions may allow one or more processors to perform image processing, data processing, beam scanning, graphic display, operation of charged particle beam devices or other imaging equipment, etc., to provide the above-mentioned... Figure 5 The operation is consistent with the description. In some embodiments, a non-transitory computer-readable medium may be provided storing instructions for a processor to perform the steps of process 500. Common forms of non-transitory media include, for example, floppy disks, flexible disks, hard disks, solid-state drives, magnetic tape or any other magnetic data storage media, compact disc read-only memory (CD-ROM), any other optical data storage media, any physical media with a perforated pattern, random access memory (RAM), programmable read-only memory (PROM) and erasable programmable read-only memory (EPROM), flash memory EPROM or any other flash memory, non-volatile random access memory (NVRAM), cache, registers, any other memory chips or cassette tapes and their networking versions.

[0088] The embodiments may be further described using the following terms: 1. A method for inspecting a sample, comprising: Multiple locations on the sample are identified, each corresponding to an inspection feature on the sample within the field of view (FOV); One or more charged particle beams are provided to the sample, and each charged particle beam is provided to a corresponding position among multiple locations; For each location, detect the emission of one or more particles caused by the charging at the corresponding location; and For each location, defect information of the sample is determined based on one or more detected particle emissions. 2. The method according to Clause 1, wherein multiple locations on the sample are determined based on layout data of features on the sample. 3. According to the method of Clause 1, determining multiple locations on the sample includes: Scan a portion of the sample; An image of a portion of the sample generated from a scan; and One or more patterns on the sample are determined based on the generated image. 4. The method according to any one of Clauses 1 to 3 further includes aligning the sample with the inspection tool based on one or more patterns of features on the determined sample. 5. The method according to any one of clauses 1 to 4, wherein the location corresponding to the inspection feature includes the area near the inspection feature. 6. The method according to any one of clauses 1 to 5, wherein the location corresponding to the inspection feature includes the inspection feature. 7. The method according to any one of Clauses 1 to 6, wherein multiple locations include areas smaller than the area of ​​FOV. 8. The method according to any one of clauses 1 to 7 further includes adjusting the scan rate of one or more charged particle beams such that the scan rate on the inspected feature is less than the scan rate on the region excluding the inspected feature. 9. The method according to any one of clauses 1 to 8 further includes determining that the corresponding inspection feature includes a defect when the generated signal exceeds a threshold. 10. The method according to any one of clauses 1 to 9 further includes modulating the current of the electron beam wave to adjust the accumulated charge on the inspection feature. 11. The method according to any one of clauses 1 to 10 further includes generating one or more signals, each signal corresponding to a particle emission in one or more particle emissions. 12. The method according to Clause 11 also includes analyzing one or more signals. 13. The method according to any one of clauses 1 to 12 further includes, before providing one or more beams of charged particles to the sample: providing one or more beams to the sample, each beam being provided to adjust the charge at a corresponding position among a plurality of positions. 14. A method for inspecting a sample, comprising: Determine the pattern of one or more inspection features on the sample within the field of view (FOV); Charge the sample at one or more locations corresponding to a pattern of one or more inspection features; Scan the sample at one or more locations corresponding to the pattern of the inspection features; For each location, detect the emission of one or more particles caused by the charging at the corresponding location; and For each location, defect information of the sample is determined based on the detected emission of one or more particles. 15. The method according to Clause 14, wherein determining multiple locations on a sample is based on layout data of features on the sample. 16. The method according to Clause 14, wherein the pattern for determining one or more inspection features on the sample comprises: Scan a portion of the sample; An image of a portion of the sample generated from a scan; and The pattern is determined based on the generated image. 17. The method according to any one of Clauses 14 to 16 further includes aligning the sample with the inspection tool based on a pattern of one or more inspection features on the determined sample. 18. The method according to any one of Clauses 14 to 17, wherein the location of the pattern corresponding to one or more inspection features includes the area near one or more inspection features. 19. The method according to any one of Clauses 14 to 18, wherein the location corresponding to one or more inspection features includes the inspection feature. 20. The method according to any one of Clauses 14 to 19, wherein one or more locations include an area smaller than the area of ​​the FOV. 21. The method according to any one of clauses 14 to 20 further includes adjusting the scan rate such that the scan rate on the inspected feature is less than the scan rate on the region excluding the inspected feature. 22. The method according to any one of clauses 14 to 21 further includes determining that the corresponding inspection feature includes a defect when the generated signal exceeds a threshold. 23. The method according to any one of clauses 14 to 22 further includes modulating the current of the electron beam wave to adjust the accumulated charge on the inspection feature. 24. The method according to any one of clauses 14 to 23 further includes generating one or more signals, each signal corresponding to a particle emission in one or more particle emissions. 25. The method according to Clause 24 also includes analyzing one or more signals. 26. The method according to any one of clauses 14 to 25 further includes, prior to charging the sample: providing one or more light beams to the sample, each light beam being provided to adjust the charge at a corresponding location in one or more locations. 27. A non-transitory computer-readable medium storing an instruction set executable by at least one processor of a computing device to cause the computing device to perform operations for examining a sample, the operations including: Multiple locations on the sample are identified, each corresponding to an inspection feature on the sample within the field of view (FOV); One or more charged particle beams are provided to the sample, and each charged particle beam is provided to a corresponding position among multiple locations; For each location, detect the emission of one or more particles caused by the charging at the corresponding location; and For each location, defect information of the sample is determined based on one or more detected particle emissions. 28. A non-transitory computer-readable medium pursuant to Clause 27, wherein multiple locations on a sample are determined based on layout data of features on the sample. 29. A non-transitory computer-readable medium pursuant to Clause 27, wherein identifying multiple locations on a sample includes: Scan a portion of the sample; An image of a portion of the sample generated from a scan; and One or more patterns on the sample are determined based on the generated image. 30. A non-transitory computer-readable medium pursuant to any of Clauses 27 to 29, wherein the operation further includes aligning the sample with an inspection tool based on one or more patterns of features on the determined sample. 31. A non-transitory computer-readable medium according to any one of clauses 27 to 30, wherein the location corresponding to the inspection feature includes the area near the inspection feature. 32. A non-transitory computer-readable medium pursuant to any of Clauses 27 to 31, wherein the location corresponding to the inspection feature includes the inspection feature. 33. A nontransitory computer-readable medium pursuant to any of Clauses 27 to 32, wherein multiple locations include areas smaller than the area of ​​the field of view (FOV). 34. A non-transitory computer-readable medium according to any one of clauses 27 to 33, wherein the operation further includes adjusting the scan rate of one or more charged particle beams such that the scan rate on the inspected feature is less than the scan rate on the region excluding the inspected feature. 35. A non-transitory computer-readable medium according to any one of clauses 27 to 34, wherein the operation further includes determining that a corresponding inspection feature includes a defect when the generated signal exceeds a threshold. 36. A non-transitory computer-readable medium according to any one of clauses 27 to 35, wherein the operation further includes modulating the current of the electron beam wave to adjust the accumulated charge on the inspected feature. 37. A non-transitory computer-readable medium according to any one of clauses 27 to 36, wherein the operation further includes generating one or more signals, each signal corresponding to a particle emission in one or more particle emissions. 38. A non-transitory computer-readable medium pursuant to Clause 37, wherein the operation further includes the analysis of one or more signals. 39. A non-transitory computer-readable medium according to any one of clauses 27 to 38, wherein the operation further includes, prior to providing one or more beams of charged particles to the sample: providing one or more beams to the sample, each beam being provided to adjust the charge at a corresponding position among a plurality of positions. 40. A non-transitory computer-readable medium storing an instruction set executable by at least one processor of a computing device to cause the computing device to perform operations for examining a sample, the operations including: Determine the pattern of one or more inspection features on the sample within the field of view (FOV); Charge the sample at one or more locations corresponding to a pattern of one or more inspection features; Scan the sample at one or more locations corresponding to the pattern of the inspection features; For each location, detect the emission of one or more particles caused by the charging at the corresponding location; and For each location, defect information of the sample is determined based on the detected emission of one or more particles. 41. A non-transitory computer-readable medium pursuant to Clause 40, wherein multiple locations on a sample are determined based on layout data of features on the sample. 42. A non-transitory computer-readable medium according to Clause 40, wherein a pattern defining one or more inspection features on a sample comprises: Scan a portion of the sample; An image of a portion of the sample generated from a scan; and The pattern is determined based on the generated image. 43. A non-transitory computer-readable medium according to any one of clauses 40 to 42, wherein the operation further includes aligning the sample with the inspection tool based on a pattern of one or more inspection features on the determined sample. 44. A non-transitory computer-readable medium according to any one of clauses 40 to 43, wherein the location of a pattern corresponding to one or more inspection features includes an area near one or more inspection features. 45. A non-transitory computer-readable medium pursuant to any of clauses 40 to 44, wherein the location corresponding to one or more inspection features includes the inspection features. 46. ​​A nontransitory computer-readable medium pursuant to any of Clauses 40 to 45, wherein one or more locations include an area smaller than the area of ​​the field of view (FOV). 47. A non-transitory computer-readable medium according to any one of clauses 40 to 46, wherein the operation further includes adjusting the scan rate of the scan such that the scan rate on the inspected features is less than the scan rate on the regions excluding the inspected features. 48. A non-transitory computer-readable medium according to any one of clauses 40 to 47, wherein the operation further includes determining that a corresponding inspection feature includes a defect when the generated signal exceeds a threshold. 49. A non-transitory computer-readable medium according to any one of clauses 40 to 48, wherein the operation further includes modulating the current of the electron beam wave to adjust the accumulated charge on the inspection feature. 50. A non-transitory computer-readable medium according to any one of clauses 40 to 49, wherein the operation further includes generating one or more signals, each signal corresponding to a particle emission in one or more particle emissions. 51. A non-transitory computer-readable medium pursuant to Clause 50, wherein operation further includes analyzing one or more signals. 52. A non-transitory computer-readable medium according to any one of clauses 40 to 51, wherein the operation further includes, prior to charging the sample: providing one or more beams to the sample, each beam being provided to adjust the charge at a corresponding location in one or more locations. 53. A system for examining a sample, the system comprising: Memory, storing instruction sets; and One or more processors are configured to execute a set of instructions to cause the system to perform operations, including: Multiple locations on the sample are identified, each corresponding to an inspection feature on the sample within the field of view (FOV); One or more charged particle beams are provided to the sample, and each charged particle beam is provided to a corresponding position among multiple locations; For each location, detect the emission of one or more particles caused by the charging at the corresponding location; and For each location, defect information of the sample is determined based on one or more detected particle emissions. 54. A system pursuant to Clause 53, wherein multiple locations on a sample are determined based on layout data of features on the sample. 55. A system according to Clause 53, wherein determining multiple locations on a sample includes: Scan a portion of the sample; An image of a portion of the sample generated from a scan; and One or more patterns on the sample are determined based on the generated image. 56. A system according to any one of clauses 53 to 55, wherein the operation further includes aligning the sample with an inspection tool based on one or more patterns of features on the determined sample. 57. A system according to any one of clauses 53 to 56, wherein the location corresponding to the inspection feature includes the area near the inspection feature. 58. A system pursuant to any one of clauses 53 to 57, wherein the location corresponding to the inspection feature includes the inspection feature. 59. A system pursuant to any of clauses 53 to 58, wherein multiple locations include areas smaller than the area of ​​the field of view (FOV). 60. A system according to any one of clauses 53 to 59, wherein operation further includes adjusting the scan rate of one or more charged particle beams such that the scan rate on the inspected feature is less than the scan rate on the region excluding the inspected feature. 61. A system according to any one of clauses 53 to 60, wherein the operation further includes determining that a corresponding inspection feature includes a defect when the generated signal exceeds a threshold. 62. A system according to any one of clauses 53 to 61, wherein the operation further includes modulating the current of the electron beam wave to adjust the accumulated charge on the inspection feature. 63. A system according to any one of clauses 53 to 62, wherein the operation further includes generating one or more signals, each signal corresponding to a particle emission in one or more particle emissions. 64. A system pursuant to Clause 63, wherein operation further includes the analysis of one or more signals. 65. A system according to any one of clauses 53 to 64, wherein the operation further includes, prior to providing one or more beams of charged particles to the sample: providing one or more beams to the sample, each beam being provided to adjust the charge at a corresponding position among a plurality of positions. 66. A system for examining a sample, the system comprising: Memory, storing instruction sets; and One or more processors are configured to execute a set of instructions to cause the system to perform operations, including: Determine the pattern of one or more inspection features on the sample within the field of view (FOV); Charge the sample at one or more locations corresponding to a pattern of one or more inspection features; Scan the sample at one or more locations corresponding to the pattern of the inspection features; For each location, detect the emission of one or more particles caused by the charging at the corresponding location; and For each location, defect information of the sample is determined based on the detected emission of one or more particles. 67. A system pursuant to Clause 66, wherein multiple locations on a sample are determined based on layout data of features on the sample. 68. A system according to Clause 66, wherein the pattern for determining one or more inspection features on a sample includes: Scan a portion of the sample; An image of a portion of the sample generated from a scan; and The pattern is determined based on the generated image. 69. A system according to any one of clauses 66 to 68, wherein the operation further includes aligning the sample with the inspection tool based on a pattern of one or more inspection features on the determined sample. 70. A system according to any one of clauses 66 to 60, wherein the location of a pattern corresponding to one or more inspection features includes an area near one or more inspection features. 71. A system according to any one of clauses 66 to 70, wherein the location corresponding to one or more inspection features includes the inspection feature. 72. A system pursuant to any of Clauses 66 to 71, wherein one or more locations include an area smaller than the area of ​​the field of view (FOV). 73. A system according to any one of clauses 66 to 72, wherein the operation further includes adjusting the scan rate of the scan such that the scan rate on the inspected feature is less than the scan rate on the region excluding the inspected feature. 74. A system according to any one of clauses 66 to 73, wherein the operation further includes determining that a corresponding inspection feature includes a defect when the generated signal exceeds a threshold. 75. A system according to any one of clauses 66 to 74, wherein the operation further includes modulating the current of the electron beam wave to adjust the accumulated charge on the inspection feature. 76. A system according to any one of clauses 66 to 75, wherein the operation further includes generating one or more signals, each signal corresponding to a particle emission in one or more particle emissions. 77. A system pursuant to Clause 76, wherein operation further includes the analysis of one or more signals. 78. A system according to any one of clauses 66 to 77, wherein the operation further includes, prior to charging the sample: providing one or more beams to the sample, each beam being provided to adjust the charge at a corresponding location in one or more locations.

[0089] It should be understood that the embodiments of this disclosure are not limited to the precise constructions described above and illustrated in the accompanying drawings, and various modifications and changes may be made without departing from its scope.

Claims

1. A non-transitory computer-readable medium storing a set of instructions executable by at least one processor of a computing device to cause the computing device to perform operations for inspecting a specimen, the operations comprising: determining a plurality of locations on the specimen, each location corresponding to an inspection feature on the specimen in a field of view (FOV); providing one or more charged particle beams to the specimen, each charged particle beam provided to a corresponding location of the plurality of locations; for each location, detecting one or more particle emissions caused by the charging of the corresponding location; and for each location, determining defect information of the specimen based on the one or more detected particle emissions.

2. The non-transitory computer-readable medium of claim 1, wherein determining the plurality of locations on the specimen is based on layout data of features on the specimen.

3. The non-transitory computer-readable medium of claim 1, wherein determining the plurality of locations on the specimen comprises: scanning a portion of the specimen; generating an image of the portion of the specimen based on the scanning; and determining one or more patterns of features on the specimen based on the generated image.

4. The non-transitory computer-readable medium of claim 1, wherein the operations further comprise: aligning the specimen with an inspection tool based on the determined one or more patterns of features on the specimen.

5. The non-transitory computer-readable medium of claim 1, wherein a location corresponding to an inspection feature includes an area near the inspection feature.

6. The non-transitory computer-readable medium of claim 1, wherein a location corresponding to an inspection feature includes the inspection feature.

7. The non-transitory computer-readable medium of claim 1, wherein the plurality of locations includes an area smaller than an area of the FOV.

8. The non-transitory computer-readable medium of claim 1, wherein the operations further comprise: adjusting a scan rate of the one or more charged particle beams such that the scan rate on an inspection feature is less than the scan rate on an area not including the inspection feature.

9. The non-transitory computer-readable medium of claim 1, wherein the operations further comprise: determining that a corresponding inspection feature includes a defect when a generated signal exceeds a threshold.

10. The non-transitory computer-readable medium of claim 1, wherein the operations further comprise: modulating a current of an electron beam wave to adjust a cumulative charge on an inspection feature.

11. The non-transitory computer-readable medium of claim 1, wherein the operations further comprise: generating one or more signals, each signal corresponding to a particle emission of the one or more particle emissions.

12. The non-transitory computer-readable medium of claim 11, wherein the operations further comprise: analyzing the one or more signals.

13. The non-transitory computer-readable medium of claim 1, wherein the operations further comprise, prior to providing the one or more charged particle beams to the specimen: providing one or more light beams to the specimen, each light beam provided to adjust a charge of a corresponding location of the plurality of locations.

14. A non-transitory computer-readable medium storing a set of instructions executable by at least one processor of a computing device to cause the computing device to perform operations for inspecting a specimen, the operations comprising: determining a pattern of one or more inspection features on the specimen in a field of view (FOV); charging the specimen at one or more locations corresponding to the pattern of one or more inspection features; scanning the specimen at one or more locations corresponding to the pattern of inspection features; for each location, detecting one or more particle emissions caused by the charging of the corresponding location; and For each location, defect information of the sample is determined based on the detected one or more particle emissions.

15. The non-transitory computer-readable medium of claim 14, wherein the operations further comprise, prior to charging the sample: providing one or more light beams to the sample, each light beam provided to adjust a charge of a corresponding location of the one or more locations.

Images