Mechanical oscillator readout device, method of manufacture and quantum device

Abstract

The application provides a mechanical oscillator reading device, a preparation method and a quantum device, and relates to the technical field of mechanical oscillator reading. The mechanical oscillator reading device comprises a substrate, a mechanical oscillator film layer, a mechanical oscillator driving circuit and a magnetic element. The substrate has a hollow groove; the mechanical oscillator film layer is arranged on one side of the substrate; part of the mechanical oscillator film layer arranged on the hollow groove forms a suspended mechanical oscillator; the mechanical oscillator driving circuit is arranged on the mechanical oscillator film layer and is used for transmitting a driving signal; the mechanical oscillator driving circuit comprises a driving cavity, and the suspended mechanical oscillator is arranged in the driving cavity; the magnetic element is arranged on the suspended mechanical oscillator, and the suspended mechanical oscillator vibrates under the action of the signal to drive the vibration of the magnetic element. Based on the high sensitivity of the magnetic element to the magnetic field disturbance, the application can accurately realize mechanical oscillator reading and has the characteristics of high measurement sensitivity.

Description

Technical Field

[0001] This application relates to the technical field of mechanical oscillator reading, and more specifically, to a mechanical oscillator reading device, a preparation method thereof, and a quantum device. Background Technology

[0002] Mechanical oscillators, as core components of quantum optical and mechanical devices, possess significant application potential in quantum sensing and measurement, quantum information processing, and fundamental physics research due to their extremely low energy consumption, high quality factor, and coupling ability with various physical fields. For example, in quantum sensing and measurement, mechanical oscillators can be used to achieve ultra-high sensitivity detection of force, mass, magnetic fields, and acceleration. In quantum information processing, mechanical oscillators can serve as long-lived quantum memories or as coherent conversion interfaces connecting different quantum systems.

[0003] To realize the aforementioned applications of mechanical oscillators, the reading of their quantum or classical vibrational states (referred to as mechanical oscillator reading) plays a crucial role. Currently, mechanical oscillator reading primarily relies on superconducting microwave circuits. For example, by placing a mechanical oscillator in close proximity to a superconducting microwave resonant cavity, the oscillations (phonon modes) of the mechanical oscillator are coupled with the photonic modes of the superconducting microwave resonant cavity. When the mechanical oscillator vibrates, it modulates the microwave resonant frequency or phase of the superconducting microwave resonant cavity. By detecting changes in the microwave signal, the motion state of the mechanical oscillator can be deduced, thus completing the mechanical oscillator reading.

[0004] However, the inventors of this application have discovered that current mechanical oscillator readout methods relying on superconducting microwave circuits have at least the following problems:

[0005] 1. Weak coupling strength and limited sensitivity: The direct coupling (optical-mechanical coupling) between microwave photons and mechanical phonons is usually weak, which limits the signal-to-noise ratio and detection sensitivity of mechanical vibration readout.

[0006] 2. Discrete Structure Integration and Process Complexity: The mechanical oscillator and the superconducting microwave resonator need to be fabricated independently on different substrates. Then, complex integration processes such as flip-chip bonding are required to bond them together to form a coupling. However, this integration process is complex and it is difficult to precisely control the coupling strength between the mechanical oscillator and the superconducting microwave resonator.

[0007] 3. Stringent requirements for extremely low temperature operating environment: Due to the unique physical characteristics of superconducting microwave circuits (superconducting materials only have superconducting properties at extremely low temperatures), the mechanical oscillator reading process needs to be operated at extremely low temperatures, which requires temperature control equipment such as dilution refrigerators, thus increasing the cost and difficulty of mechanical oscillator reading.

[0008] The content in the background section is merely technology known to the public and does not necessarily represent existing technology in this field. Summary of the Invention

[0009] This application provides a mechanical oscillator readout device, a fabrication method, and a quantum device, aiming to solve at least one of the technical problems mentioned in the background art.

[0010] According to one aspect of this application, a mechanical oscillator readout device is provided, comprising a substrate, a mechanical oscillator thin film layer, a mechanical oscillator driving circuit, and a magnetic component. The substrate has a hollow groove; the mechanical oscillator thin film layer is disposed on one side of the substrate; a portion of the mechanical oscillator thin film layer disposed on the hollow groove forms a suspended mechanical oscillator; the mechanical oscillator driving circuit is disposed on the mechanical oscillator thin film layer for transmitting a driving signal; the mechanical oscillator driving circuit includes a driving cavity, in which the suspended mechanical oscillator is disposed; the magnetic component is disposed on the suspended mechanical oscillator, and the suspended mechanical oscillator vibrates under the action of the signal to drive the vibration of the magnetic component.

[0011] According to some embodiments of this application, the mechanical oscillator drive circuit includes: a signal input terminal for inputting a drive signal; a signal output terminal for outputting a drive signal; and a ring microstrip line for transmitting the drive signal, wherein a drive cavity is provided in the ring microstrip line.

[0012] According to some embodiments of this application, the mechanical oscillator drive circuit includes: a first capacitor, coupled to a signal input terminal and a ring microstrip line; and a second capacitor, coupled to a ring microstrip line and a signal output terminal.

[0013] According to some embodiments of this application, the magnetic element is disposed in the central region of the suspended mechanical oscillator; and / or, the area of ​​the magnetic element is smaller than the area of ​​the suspended mechanical oscillator.

[0014] According to some embodiments of this application, the mechanical oscillator thin film layer has a first thickness, the first thickness being in the range of 50nm-250nm; and / or, the mechanical oscillator thin film layer is made of silicon nitride.

[0015] According to some embodiments of this application, the mechanical oscillator drive circuit has a second thickness ranging from 50nm to 250nm; and / or, the mechanical oscillator drive circuit is made of aluminum.

[0016] According to another aspect of this application, this application provides a method for fabricating a mechanical oscillator readout device, comprising: growing a mechanical oscillator thin film layer on a first surface of a substrate, and growing a mask layer on a second surface of the substrate; growing a driving circuit layer on the mechanical oscillator thin film layer; depositing a first photoresist on the surface of the driving circuit layer; performing photolithography on the first photoresist to determine a first mask pattern; and etching the driving circuit layer based on the first mask pattern to fabricate a mechanical oscillator driving circuit, the mechanical oscillator driving circuit including a signal input terminal, a signal output terminal, and a ring microstrip line. A magnetic layer is grown on a thin film layer of a mechanical oscillator; a second photoresist is deposited on the surface of the magnetic layer, and the second photoresist is photolithographically processed to determine a second mask pattern, and the magnetic layer is etched based on the second mask pattern to prepare a magnetic device; a third photoresist is deposited on the surface of the mask layer, and the third photoresist is photolithographically processed to determine a third mask pattern, and the mask layer is etched based on the third mask pattern to prepare a release window of the substrate; the second surface of the substrate is etched through the release window to prepare a substrate with a hollow groove, forming a mechanical oscillator readout device.

[0017] According to some embodiments of this application, the mechanical oscillator thin film layer has a first thickness, the first thickness being in the range of 50nm-250nm; and / or, the mechanical oscillator thin film layer is made of silicon nitride.

[0018] According to some embodiments of this application, the mechanical oscillator drive circuit has a second thickness ranging from 50nm to 250nm; and / or, the mechanical oscillator drive circuit is made of aluminum.

[0019] According to another aspect of this application, this application provides a quantum device, including the mechanical oscillator readout device as described above.

[0020] Beneficial effects

[0021] This application provides a mechanical oscillator readout device. The mechanical oscillator readout device includes a substrate, a mechanical oscillator thin film layer, a mechanical oscillator driving circuit, and a magnetic component. The substrate has a hollow groove. The mechanical oscillator thin film layer is disposed on one side of the substrate, wherein a portion of the mechanical oscillator thin film layer disposed in the hollow groove forms a suspended mechanical oscillator. The mechanical oscillator driving circuit is disposed on the mechanical oscillator thin film layer and is used to transmit a driving signal. The mechanical oscillator driving circuit includes a driving cavity, in which the suspended mechanical oscillator is disposed. The magnetic component is disposed on the suspended mechanical oscillator, and the suspended mechanical oscillator vibrates under the action of the driving signal, thereby driving the vibration of the magnetic component.

[0022] The mechanical oscillator readout device provided in this application can drive the vibration of a magnetic component when the suspended mechanical oscillator vibrates, enabling the magnetic component to form a magneton-phonon dispersive coupling with the suspended mechanical oscillator. This application utilizes a magneton-phonon dispersive coupling mechanism, using a magnetic material as the sensing medium, to mechanically couple with the mechanical oscillator. When the mechanical oscillator vibrates, the magnetic material vibrates accordingly, producing a minute displacement. Given that the magnetic material is in a non-uniform magnetic field environment generated by the driving circuit, this minute change in its spatial position will lead to a change in the effective magnetic field strength it experiences, thereby modulating the magneton frequency according to the Larmor precession principle. When the microwave photon and magneton reach a strong coupling region, the photon mode and magneton mode mix, forming two energy-level repulsive hybrid modes. The spectral spacing between these two hybrid modes directly depends on the magneton frequency. By measuring the dynamic change of this spectral spacing using external testing equipment (such as a vector network analyzer), the vibration information of the mechanical oscillator can be demodulated in reverse. Based on the high sensitivity of magnetons to magnetic field disturbances, this application can accurately read out the mechanical oscillator, exhibiting high measurement sensitivity.

[0023] The mechanical oscillator reading device provided in this application can complete mechanical oscillator reading at room temperature without relying on temperature control equipment such as dilution refrigerators, which can reduce the cost and operation difficulty of mechanical oscillator reading.

[0024] The mechanical oscillator readout device provided in this application is a monolithic design, with the mechanical oscillator thin film layer, mechanical oscillator driving circuit, and magnetic components sequentially disposed on the same substrate. No bonding process is required during fabrication, allowing for precise coupling strength and further improving the detection sensitivity of the mechanical oscillator. The mechanical oscillator readout device provided in this application features a simple structure and can be mass-produced on-chip. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This diagram shows a structural schematic of a mechanical oscillator reading device according to an embodiment of this application;

[0027] Figure 2 A top view of the mechanical oscillator reading device according to an embodiment of this application is shown;

[0028] Figure 3 A perspective view of a mechanical oscillator reading device according to an embodiment of this application is shown;

[0029] Figure 4A schematic flowchart illustrating the preparation method of an embodiment of this application is shown.

[0030] Explanation of reference numerals in the attached figures:

[0031] Substrate 10; Mechanical oscillator thin film layer 20; Mechanical oscillator drive circuit 30; Magnetic component 40; Mask layer 50;

[0032] Hollow groove 11; Suspended mechanical oscillator 21; Drive circuit layer 22; Magnetic layer 23;

[0033] Signal input terminal 31; signal output terminal 32; ring microstrip line 33; first capacitor 34; second capacitor 35. Detailed Implementation

[0034] The technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0035] According to one aspect of this application, a mechanical oscillator reading device is provided.

[0036] According to the example embodiment, such as Figure 1 As shown, the mechanical oscillator reading device includes a substrate 10, a mechanical oscillator thin film layer 20, a mechanical oscillator driving circuit 30, and a magnetic component 40.

[0037] The substrate 10 has a hollow groove 11. A mechanical oscillator thin film layer 20 is disposed on one side of the substrate 10, and a portion of the mechanical oscillator thin film layer 20 disposed on the hollow groove 11 forms a suspended mechanical oscillator 21.

[0038] For example, the hollow groove 11 can be obtained by etching the substrate 10 (such as by dry etching). By disposing the mechanical oscillator thin film layer 20 on the substrate 10 having the hollow groove 11, a portion of the mechanical oscillator thin film layer 20 can be released, thereby making it a suspended mechanical oscillator 21 with a high quality factor.

[0039] As an example, such as Figure 1 As shown, the hollow groove 11 can be a trapezoidal groove, and the base angle of the trapezoidal groove can be 54.74°.

[0040] For example, the substrate 10 can be a silicon wafer with polished surfaces on both sides (resistance can be 10000Ω / cm). The thickness of the substrate 10 can be 300um or 500um, and this application does not limit it.

[0041] Optionally, the mechanical oscillator thin film layer 20 can be grown on the first surface (as shown above surface) of the substrate 10 using a low-pressure chemical vapor deposition (LPCVD) process. The mechanical oscillator thin film layer 20 is a high tensile stress thin film layer with high tensile stress (tensile stress can reach above 2 GPa). It can be understood that the greater the tensile stress of the mechanical oscillator thin film layer 20, the higher the vibration frequency, which enables the mechanical oscillator thin film layer 20 to achieve high-frequency operation.

[0042] Optionally, the mechanical oscillator thin film layer 20 can be made of silicon nitride. The mechanical oscillator thin film layer 20 has a first thickness, which can range from 50nm to 250nm, and this application does not limit it.

[0043] As an example, the thickness of the mechanical oscillator thin film layer 20 can be 100 nm.

[0044] According to the example embodiment, the mechanical oscillator drive circuit 30 is disposed on the mechanical oscillator thin film layer 20 for transmitting drive signals. The mechanical oscillator drive circuit 30 includes a drive cavity D, and the suspended mechanical oscillator 21 is disposed in the drive cavity D.

[0045] For example, such as Figure 2 or Figure 3 As shown, the mechanical oscillator driving circuit 30 is disposed on the mechanical oscillator thin film layer 20. A driving signal (such as a microwave signal) can be passed into the mechanical oscillator driving circuit 30, which can drive the mechanical oscillator thin film layer 20 to vibrate. The mechanical oscillator driving circuit 30 is provided with a driving cavity D, which can serve as a microwave resonant cavity.

[0046] Optionally, the mechanical oscillator drive circuit 30 can be made of aluminum. The mechanical oscillator drive circuit 30 can be set on the mechanical oscillator thin film layer 20 by photolithography or by lift-off process. This application does not limit this.

[0047] Optionally, the mechanical oscillator drive circuit 30 has a second thickness, which can range from 50nm to 150nm, and this application does not limit it.

[0048] As an example, the thickness of the mechanical oscillator drive circuit 30 can be 100 nm.

[0049] According to the example embodiment, the magnetic element 40 is disposed on the suspended mechanical oscillator 21. The suspended mechanical oscillator 21 vibrates under the action of a driving signal, thereby driving the vibration of the magnetic element 40.

[0050] For example, under the action of a driving signal, the magnetic component 40 can form a dispersion coupling with the suspended mechanical oscillator 21.

[0051] Optionally, the magnetic component 40 can be a circular magnetic component. The size of the circular magnetic component is smaller than the area of ​​the suspended mechanical oscillator 21. The thickness of the circular magnetic component can range from 50 nm to 100 nm.

[0052] The working principle of the mechanical oscillator reading device provided in this application is as follows:

[0053] When a driving signal is input to the driving cavity D, a magnetic field is generated within it. Since the magnetic component 40 is mounted on the suspended mechanical oscillator 21, when the oscillator 21 vibrates, it causes the magnetic component 40 to vibrate accordingly. When the position of the magnetic component 40 within the driving cavity D changes, the effective magnetic field applied to it changes, which in turn causes a change in the magneton frequency of the collective spin-excited magnetons within the magnetic component 40. This results in dispersive coupling between the magnetic component 40 (magnetons) and the suspended mechanical oscillator 21 (phonons).

[0054] Because of the strong coupling between the microwave photons in the driving cavity D (i.e., the microwave resonant cavity) and the magnets in the magnetic component 40, the cavity photon mode and the magnetic mode are mixed, resulting in two new hybrid modes with repulsive energy levels. Therefore, when the frequency of the magnets in the magnetic component 40 changes, the spectral spacing between the two new hybrid modes will also change.

[0055] This application can determine the change in magneton frequency by measuring the change in the spectral spacing between two hybrid modes, and then determine the vibration information of the suspended mechanical oscillator 21 based on the change in magneton frequency, thereby completing the mechanical oscillator reading.

[0056] For example, the change in spectral spacing between the cavity photon mode of the driving cavity D and the magneton mode of the magnetic element 40 can be measured by a vector network analyzer, which is not described in this application.

[0057] Through the above embodiments, this application provides a mechanical oscillator reading device. The mechanical oscillator reading device includes a substrate, a mechanical oscillator thin film layer, a mechanical oscillator driving circuit, and a magnetic component. The substrate has a hollow groove. The mechanical oscillator thin film layer is disposed on one side of the substrate, wherein a portion of the mechanical oscillator thin film layer disposed on the hollow groove forms a suspended mechanical oscillator. The mechanical oscillator driving circuit is disposed on the mechanical oscillator thin film layer and is used to transmit a driving signal. The mechanical oscillator driving circuit includes a driving cavity, in which the suspended mechanical oscillator is disposed. The magnetic component is disposed on the suspended mechanical oscillator, and the suspended mechanical oscillator vibrates under the action of the driving signal, thereby driving the vibration of the magnetic component.

[0058] The mechanical oscillator readout device provided in this application can drive the vibration of a magnetic component when the suspended mechanical oscillator vibrates, enabling the magnetic component to form a magneton-phonon dispersive coupling with the suspended mechanical oscillator. This application utilizes a magneton-phonon dispersive coupling mechanism, using a magnetic material as the sensing medium, to mechanically couple with the mechanical oscillator. When the mechanical oscillator vibrates, the magnetic material vibrates accordingly, producing a minute displacement. Given that the magnetic material is in a non-uniform magnetic field environment generated by the driving circuit, this minute change in its spatial position will lead to a change in the effective magnetic field strength it experiences, thereby modulating the magneton frequency according to the Larmor precession principle. When the microwave photon and magneton reach a strong coupling region, the photon mode and magneton mode mix, forming two energy-level repulsive hybrid modes. The spectral spacing between these two hybrid modes directly depends on the magneton frequency. By measuring the dynamic change of this spectral spacing using external testing equipment (such as a vector network analyzer), the vibration information of the mechanical oscillator can be demodulated in reverse. Based on the high sensitivity of magnetons to magnetic field disturbances, this application can accurately read out the mechanical oscillator, exhibiting high measurement sensitivity.

[0059] The mechanical oscillator reading device provided in this application can complete mechanical oscillator reading at room temperature without relying on temperature control equipment such as dilution refrigerators, which can reduce the cost and operation difficulty of mechanical oscillator reading.

[0060] The mechanical oscillator readout device provided in this application is a monolithic design, with the mechanical oscillator thin film layer, mechanical oscillator driving circuit, and magnetic components sequentially disposed on the same substrate. No bonding process is required during fabrication, allowing for precise coupling strength and further improving the detection sensitivity of the mechanical oscillator. The mechanical oscillator readout device provided in this application features a simple structure and can be mass-produced on-chip.

[0061] Optionally, such as Figure 2 or Figure 3 As shown, the mechanical oscillator drive circuit 30 may further include a signal input terminal 31, a signal output terminal 32, and a ring microstrip line 33. The signal input terminal 31 is used to input the drive signal. The signal output terminal 32 is used to output the drive signal. The ring microstrip line 33 is used to transmit the drive signal, and a drive cavity D is provided in the ring microstrip line 33.

[0062] For example, signal input terminal 31 can be the left electrode, which can receive externally generated drive signals (such as microwave signals). Signal output terminal 32 can be the right electrode, which can output the processed or transmitted drive signal. The drive cavity D in the ring microstrip line 33 forms a microwave resonant cavity, so that the suspended mechanical oscillator 21 can vibrate under the action of the drive signal.

[0063] Optionally, such as Figure 2 or Figure 3As shown, the mechanical oscillator drive circuit 30 may further include a first capacitor 34 and a second capacitor 35. The first capacitor 34 is coupled to the signal input terminal 31 and the loop microstrip line 33. The second capacitor 35 is coupled to the loop microstrip line 33 and the signal output terminal 32.

[0064] For example, the signal input terminal 31 is coupled to the loop microstrip line 33 via a first capacitor 34. The first capacitor 34 can cooperate with the loop microstrip line 33 to achieve impedance matching, thereby coupling a drive signal of a specific strength to the loop microstrip line 33. Similarly, the signal output terminal 32 is coupled to the loop microstrip line 33 via a second capacitor 35. The second capacitor 35 can couple a drive signal of a specific strength to the signal output terminal 32.

[0065] Optionally, such as Figure 1 As shown, the magnetic component 40 is disposed in the central region of the suspended mechanical oscillator 21.

[0066] For example, the suspended mechanical oscillator 21 can vibrate under the drive of a driving signal. Its vibration mode is characterized by the largest deformation displacement in the central region and the deformation displacement gradually decreasing from the center outwards. Since the first-order vibration mode of the suspended mechanical oscillator 21 is a central up-and-down vibration, placing the magnetic component 40 in the central region of the suspended mechanical oscillator 21 can enhance the sensitivity of the magnetic component 40 to the first-order vibration of the suspended mechanical oscillator 21, thereby improving the detection sensitivity of the mechanical oscillator.

[0067] Optionally, such as Figure 2 As shown, the area of ​​the magnetic component 40 is smaller than the area of ​​the suspended mechanical oscillator 21. This arrangement allows the magnetic component 40 to vibrate in sync with the vibration of the suspended mechanical oscillator 21.

[0068] According to another aspect of this application, this application provides a method for preparing a mechanical oscillator reading device.

[0069] like Figure 4 As shown, the preparation method may include steps S100-S700.

[0070] According to the example embodiment, such as Figure 4 As shown:

[0071] In step S100, a mechanical oscillator thin film layer 20 is grown on the first surface S1 of the substrate 10, and a mask layer 50 is grown on the second surface S2 of the substrate 10.

[0072] In step S200, a drive circuit layer 22 is grown on the mechanical oscillator thin film layer 20.

[0073] In step S300, a first photoresist is applied to the surface of the driving circuit layer 22, and the first photoresist is subjected to photolithography to determine a first mask pattern. The driving circuit layer 22 is then etched based on the first mask pattern to prepare a mechanical oscillator driving circuit 30. The mechanical oscillator driving circuit 30 includes a signal input terminal 31, a signal output terminal 32, and a ring microstrip line 33.

[0074] In step S400, a magnetic layer 23 is grown on the mechanical oscillator thin film layer 20.

[0075] In step S500, a second photoresist is deposited on the surface of the magnetic layer 23, the second photoresist is photolithographically processed to determine the second mask pattern, and the magnetic layer is etched based on the second mask pattern to prepare the magnetic component 40.

[0076] In step S600, a third photoresist is deposited on the surface of the mask layer 50, the third photoresist is photolithographically processed to determine the third mask pattern, and the mask layer 50 is etched based on the third mask pattern to prepare the release window M of the substrate 10.

[0077] In step S700, the second surface S2 of the substrate 10 is etched based on the release window to prepare a substrate 10 with a hollow groove 11, forming a mechanical oscillator readout device.

[0078] The following will be combined with the appendix Figure 4 The above preparation method is described in detail.

[0079] According to the example embodiment, such as Figure 4 As shown, in step S100, a mechanical oscillator thin film layer 20 is grown on the first surface S1 of the substrate 10, and a mask layer 50 is grown on the second surface S2 of the substrate 10.

[0080] For example, a mechanical oscillator thin film layer 20 can be grown on the first surface S1 of the substrate 10 and a mask layer 50 can be grown on the second surface S2 of the substrate 10 by a low-pressure chemical vapor deposition (LPCVD) process.

[0081] The mechanical oscillator thin film layer 20 and the mask layer 50 are high tensile stress thin film layers, with high tensile stress (tensile stress can reach more than 2 GPa). It can be understood that the greater the tensile stress of the mechanical oscillator thin film layer 20, the higher the vibration frequency, which enables the mechanical oscillator thin film layer 20 to achieve high-frequency operation.

[0082] Optionally, the mechanical oscillator thin film layer 20 can be made of silicon nitride. The mechanical oscillator thin film layer 20 has a first thickness, which can range from 50nm to 250nm, and this application does not limit it.

[0083] As one embodiment, the substrate 10 can be a silicon wafer with polished surfaces on both sides (resistance can be 10000Ω / cm). The thickness of the substrate 10 can be 300um or 500um, and this application does not limit it.

[0084] As an example, the thickness of the mechanical oscillator thin film layer 20 can be 100 nm.

[0085] According to the example embodiment, such as Figure 4 As shown, in step S200, a drive circuit layer 22 is grown on the mechanical oscillator thin film layer 20.

[0086] For example, the drive circuit layer 22 can be deposited on the mechanical oscillator thin film layer 20 by deposition processes such as magnetron sputtering or thermal evaporation.

[0087] According to the example embodiment, such as Figure 4 As shown, in step S300, a first photoresist is disposed on the surface of the driving circuit layer 22, the first photoresist is photolithographically processed to determine the first mask pattern, and the driving circuit layer 22 is etched based on the first mask pattern to prepare the mechanical oscillator driving circuit 30. The mechanical oscillator driving circuit 30 includes a signal input terminal 31, a signal output terminal 32, and a ring microstrip line 33.

[0088] For example, a first photoresist is spin-coated onto the surface of the driving circuit layer 22, and a preset pattern is written onto the first photoresist using a laser. After exposure and development, a mask can be formed at the corresponding location of the preset pattern, thus obtaining the first mask pattern. Based on the first mask pattern, the driving circuit layer 22 is etched using a reactive ion etching process to obtain the mechanical oscillator driving circuit 30.

[0089] Optionally, the mechanical oscillator drive circuit 30 can be made of aluminum. The mechanical oscillator drive circuit 30 has a second thickness, which can range from 50nm to 150nm, and this application does not limit it.

[0090] As an example, the thickness of the mechanical oscillator drive circuit 30 can be 100 nm.

[0091] It can be understood here that the preset pattern is a pattern customized by the user based on the target circuit structure. The first mask pattern may include a pattern corresponding to the structure of the signal input terminal 31, the signal output terminal 32, and the ring microstrip line 33. The specific structures of the signal input terminal 31, the signal output terminal 32, and the ring microstrip line 33 have been described in detail above and will not be repeated here.

[0092] According to the example embodiment, such as Figure 4 As shown, in step S400, a magnetic layer 23 is grown on the mechanical oscillator thin film layer 20.

[0093] For example, after removing the first photoresist remaining on the surface of the mechanical oscillator thin film layer 20, a magnetic layer 23 can be deposited on the mechanical oscillator thin film layer 20 by deposition processes such as magnetron sputtering or thermal evaporation.

[0094] Optionally, the magnetic layer 23 can be made of yttrium iron garnet. The magnetic layer 23 has a third thickness, which can range from 50 nm to 150 nm, and this application does not limit it.

[0095] As an example, the thickness of the magnetic layer 23 can be 100 nm.

[0096] According to the example embodiment, such as Figure 4 As shown, in step S500, a second photoresist is disposed on the surface of the magnetic layer 23, the second photoresist is subjected to photolithography to determine the second mask pattern, and the magnetic layer is etched based on the second mask pattern to prepare a magnetic component.

[0097] For example, a second photoresist is spin-coated onto the surface of the magnetic layer 23, and a preset pattern is written onto the second photoresist using a laser. After exposure and development, a mask can be formed at the corresponding location of the preset pattern, thus obtaining the second mask pattern. Based on the second mask pattern, the magnetic layer 23 is etched using a reactive ion etching process to obtain the magnetic component 40.

[0098] It can be understood here that the preset pattern is a pattern customized by the user based on the target circuit structure. The second mask pattern may include a pattern corresponding to the structure of the magnetic component 40. The specific structure of the magnetic component 40 has been described in detail above and will not be repeated here.

[0099] According to the example embodiment, such as Figure 4 As shown, in step S600, a third photoresist is disposed on the surface of the mask layer 50, the third photoresist is photolithographically processed to determine the third mask pattern, and the mask layer 50 is etched based on the third mask pattern to prepare the release window M of the substrate 10.

[0100] For example, photoresist L is spin-coated onto the surface of the mechanical oscillator thin film layer 20 to protect it. Then, a third photoresist is spin-coated onto the surface of the mask layer 50. A preset pattern is written onto the third photoresist using a laser. After exposure and development, a mask is formed at the corresponding locations of the preset pattern, thus obtaining the third mask pattern. Based on the third mask pattern, the mask layer 50 is etched using reactive ion etching to obtain the release window M of the substrate 10 with a hollow groove.

[0101] According to the example embodiment, such as Figure 4As shown, in step S700, the second surface S2 of the substrate 10 is etched by releasing the window to prepare a substrate 10 with a hollow groove 11, forming a mechanical oscillator readout device.

[0102] For example, the second surface S2 of the substrate 10 can be etched by etching processes such as wet etching or deep silicon etching to obtain a substrate 10 with a hollow groove 11, so that a portion of the mechanical oscillator thin film layer 20 disposed on the hollow groove 11 forms a suspended mechanical oscillator 21. After the resist is removed, the mechanical oscillator reading device as described above can be prepared.

[0103] According to another aspect of this application, this application also provides a quantum device comprising a mechanical oscillator readout device as described above.

[0104] Finally, it should be noted that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions of the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A mechanical oscillator reading device, characterized in that, include: Substrate with hollow grooves; A mechanical oscillator thin film layer is disposed on one side of the substrate; wherein, a portion of the mechanical oscillator thin film layer disposed on the hollow groove forms a suspended mechanical oscillator; A mechanical oscillator drive circuit is disposed on the thin film layer of the mechanical oscillator for transmitting drive signals; the mechanical oscillator drive circuit includes a drive cavity, and the suspended mechanical oscillator is disposed in the drive cavity; A magnetic component is disposed on the suspended mechanical oscillator. The suspended mechanical oscillator vibrates under the action of the driving signal, thereby driving the vibration of the magnetic component. The magnetic frequency of the magnets excited by the collective spin in the magnetic component changes, and the spectral spacing between the two hybrid modes in the driving cavity changes accordingly. This allows the change in the magnet frequency to be determined by measuring the change in the spectral spacing between the two hybrid modes. The vibration information of the suspended mechanical oscillator is determined based on the change in the magnet frequency, thus completing the mechanical oscillator reading.

2. The mechanical oscillator reading device according to claim 1, characterized in that, The mechanical oscillator drive circuit includes: The signal input terminal is used to input the driving signal; The signal output terminal is used to output the driving signal; A ring-shaped microstrip line is used to transmit the driving signal, and the driving cavity is provided in the ring-shaped microstrip line.

3. The mechanical oscillator reading device according to claim 2, characterized in that, The mechanical oscillator drive circuit includes: A first capacitor is coupled to the signal input terminal and the ring microstrip line; The second capacitor is used to couple the ring microstrip line to the signal output terminal.

4. The mechanical oscillator reading device according to claim 1, characterized in that, The magnetic component is disposed in the central region of the suspended mechanical oscillator; and / or The area of ​​the magnetic component is smaller than the area of ​​the suspended mechanical oscillator.

5. The mechanical oscillator reading device according to claim 1, characterized in that, The mechanical oscillator thin film layer has a first thickness, which ranges from 50 nm to 250 nm. and / or The thin film layer of the mechanical oscillator is made of silicon nitride.

6. The mechanical oscillator reading device according to claim 1, characterized in that, The mechanical oscillator drive circuit has a second thickness, the second thickness being in the range of 50nm-250nm; and / or The mechanical oscillator drive circuit is made of aluminum.

7. A method for preparing a mechanical oscillator reading device as described in any one of claims 1-6, characterized in that, The preparation method includes: A mechanical oscillator thin film layer is grown on the first surface of the substrate, and a mask layer is grown on the second surface of the substrate; A drive circuit layer is grown in the thin film layer of the mechanical oscillator; A first photoresist is disposed on the surface of the driving circuit layer, and the first photoresist is photolithographically processed to determine a first mask pattern. The driving circuit layer is then etched based on the first mask pattern to prepare a mechanical oscillator driving circuit. The mechanical oscillator driving circuit includes a signal input terminal, a signal output terminal, and a ring microstrip line. A magnetic layer is grown on the thin film layer of the mechanical oscillator; A second photoresist is deposited on the surface of the magnetic layer, and the second photoresist is subjected to photolithography to determine a second mask pattern. The magnetic layer is then etched based on the second mask pattern to prepare a magnetic component. A third photoresist is deposited on the surface of the mask layer, and the third photoresist is subjected to photolithography to determine the third mask pattern. The mask layer is then etched based on the third mask pattern to prepare the release window of the substrate. The second surface of the substrate is etched based on the release window to prepare a substrate with a hollow groove, thereby forming the mechanical oscillator readout device.

8. A quantum device, characterized in that, Includes the mechanical oscillator reading device as described in any one of claims 1-6.

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