A type of AlO x P-type dipole MOS device and its fabrication method

By growing SiO2, HfO2 and AlOx thin films in situ using the ALD process and combining it with ultra-short time high temperature annealing, the material selection and process challenges of the P-type dipole layer were solved, achieving high-performance MOS devices with flat-band voltage regulation and low leakage current characteristics, thus meeting the requirements of advanced processes.

CN121548090BActive Publication Date: 2026-07-03FUDAN UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
FUDAN UNIVERSITY
Filing Date
2026-01-20
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing technologies struggle to effectively control the threshold voltage of gate-around field-effect transistors (GOTs), especially due to the difficulty in selecting and fabricating P-type dipole layer materials. This makes it difficult to meet the high-performance requirements of devices at advanced process nodes of 3nm and below, resulting in problems such as uneven dipole distribution, high interface state density, and difficulty in EOT control.

Method used

SiO2, HfO2, and AlOx films were grown in situ using the ALD process, and an ultrathin AlOx layer was deposited on the HfO2 film. P-type dipoles were formed by ultrashort-time high-temperature annealing, thereby achieving flat-band voltage regulation of the MOS device.

Benefits of technology

It achieves a flat-band voltage offset of ~250mV, low interface state density, low leakage current, and is compatible with advanced processes of 3nm and below. It balances miniaturization and high drive current, has high process stability, and reduces mass production costs.

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Abstract

This invention provides an AlO x P-type dipole MOS device and its fabrication method, including a bottom-up arrangement of a P-type silicon substrate, a SiO2 thin film, an HfO2 thin film, and an AlO2 thin film. x Thin films, TiN thin films, and W thin films, with Ni thin films deposited on the back side of the P-type silicon substrate, and ultrathin AlO films deposited on HfO2 thin films. x After the dipole layer, SiO2 thin films, HfO2 thin films, and AlO2 thin films are grown in situ using the ALD process through an ultra-short time high temperature annealing process. x Thin film, and fire-driven annealing realizes flat-band voltage regulation of MOS device. After driving annealing, Al diffuses into HfO2 and forms a dipole in the High k / SiO2 interface layer, which changes the local chemical environment and charge distribution at the interface, thereby forming a fixed electric dipole layer.
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