Mask member, light-emitting element transfer apparatus, and method of transferring light-emitting element

Abstract

The invention provides a mask member, a light-emitting element transfer apparatus, and a transfer method. The mask member includes: a first mask including a light blocking pattern layer and a base layer, in which the light blocking pattern layer of the first mask includes an opening pattern; and a second mask including a light blocking pattern layer and a base layer, in which the light blocking pattern layer of the second mask includes a plurality of opening patterns disposed at an angle with respect to a center of the second mask. The mask member defines a transfer region by overlapping an opening pattern of the first mask and an opening pattern of the plurality of opening patterns of the second mask.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to and all benefits arising therefrom of Korean Patent Application No. 10-2024-0108254, filed on August 13, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to a mask component, a light-emitting element transfer device, and a method for transferring a light-emitting element. Background Technology

[0004] With the development of multimedia, display devices are becoming increasingly important. In response, several types of display devices, such as organic light-emitting diodes (OLEDs) and liquid crystal displays (LCDs), are being used.

[0005] Display devices for displaying images include display panels such as, for example, light-emitting display panels or liquid crystal display panels. Among these display panels, light-emitting display panels may include light-emitting diodes (LEDs). LEDs include organic light-emitting diodes that use organic materials as fluorescent materials or inorganic light-emitting diodes that use inorganic materials as fluorescent materials.

[0006] When manufacturing display panels that use inorganic light-emitting diodes as light-emitting diodes, it is necessary to grow micro-LEDs on a semiconductor substrate and then transfer the micro-LEDs onto the display panel substrate. Summary of the Invention

[0007] The embodiments and features of this disclosure provide a mask component suitable for a circular unit shape, a light-emitting element transfer device, and a transfer method.

[0008] However, the aspects of this disclosure are not limited to those set forth herein. These and other aspects of this disclosure will become more apparent to those skilled in the art upon reference to the detailed description of this disclosure given below.

[0009] According to an embodiment, the mask component includes: a first mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the first mask includes an opening pattern; and a second mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the second mask includes a plurality of opening patterns disposed at an angle relative to the center of the second mask, wherein the mask component defines a transfer region by overlapping the opening patterns of the first mask and the plurality of opening patterns of the second mask.

[0010] In one embodiment, the opening pattern of the first mask is configured as a plurality of opening patterns that are angled relative to the center of the first mask, and the plurality of opening patterns of the first mask and the plurality of opening patterns of the second mask are symmetrical from left to right.

[0011] In an implementation, the corresponding shapes of the multiple opening patterns of the second mask may be different from each other.

[0012] In an implementation, the opening pattern of the second mask is either a shape with straight or curved edges, or a circle.

[0013] In an embodiment, the base layer may have a flat shape, be formed of a transparent material and have light-transmitting properties, wherein the light-blocking pattern layer of the first mask includes a material with light-blocking properties in a region of the first mask that is different from the opening pattern of the first mask, and the light-blocking pattern layer of the second mask includes a material with light-blocking properties in a region of the second mask that is different from the plurality of opening patterns of the second mask.

[0014] In this embodiment, the first mask and the second mask are each a mask component that can be rotatably disposed.

[0015] In one implementation, the opening pattern of the first mask has a single-row shape, and each of the plurality of opening patterns of the second mask has a size and shape corresponding to a single chip.

[0016] According to an embodiment, a transfer device for transferring a light-emitting element includes: a laser emitting member; a support member disposed below the laser emitting member and supporting a target substrate; and a mask member disposed between a donor substrate disposed on the target substrate and the laser emitting member, defining a laser transfer region. The mask member includes: a first mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the first mask includes an opening pattern; and a second mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the second mask includes a plurality of opening patterns angled relative to the center of the second mask, wherein the transfer device defines the laser transfer region by overlapping the opening patterns of the first mask and the plurality of opening patterns of the second mask.

[0017] In one embodiment, the opening pattern of the first mask is configured as a plurality of opening patterns that are angled relative to the center of the first mask, and the plurality of opening patterns of the first mask and the plurality of opening patterns of the second mask are symmetrical from left to right.

[0018] In an implementation, the corresponding shapes of the multiple opening patterns of the second mask may be different from each other.

[0019] In an implementation, the opening pattern of the second mask is either a shape with straight or curved edges, or a circle.

[0020] In an implementation, the base layer may have a flat shape, be formed of a transparent material and have light-transmitting properties, wherein the light-blocking pattern layer of the first mask includes a material with light-blocking properties in a region of the first mask that is different from the opening pattern of the first mask, and the light-blocking pattern layer of the second mask includes a material with light-blocking properties in a region of the second mask that is different from the plurality of opening patterns of the second mask.

[0021] In this embodiment, the first mask and the second mask are each a mask component that can be rotatably disposed.

[0022] In one embodiment, the target substrate includes multiple unit regions for forming multiple display panels, and the multiple unit regions are circular.

[0023] In one implementation, the opening pattern of the first mask has a single-row shape, wherein each of the plurality of opening patterns of the second mask has a size and shape corresponding to a single chip.

[0024] According to an embodiment, the method for transferring a light-emitting element includes: examining, via a controller, the shape of an opening pattern of a first mask and the shape of a plurality of opening patterns of a second mask in association with finding an opening pattern having the same shape as a transfer target region of a target substrate; rotating, via the controller, at least one of the first mask and the second mask such that the opening pattern of the first mask overlaps with the widest opening pattern among the plurality of opening patterns of the second mask, wherein the shape of the opening pattern of the first mask is the same as the shape of the transfer target region; and irradiating the overlapping opening pattern of the first mask and the widest opening pattern of the second mask by emitting a laser.

[0025] In one implementation, the method further includes moving the mask component to the next transfer target area via a controller.

[0026] In one embodiment, at the instant when the opening pattern of the first mask and the widest opening pattern of the second mask overlap and are arranged in a straight line, a laser is used to irradiate the opening pattern formed by the overlap between the opening pattern of the first mask and the widest opening pattern of the second mask.

[0027] In one embodiment, the opening pattern of the first mask is configured as a plurality of opening patterns arranged at an angle relative to the center of the first mask, and the plurality of opening patterns of the second mask are arranged at an angle relative to the center of the second mask, and the plurality of opening patterns of the first mask and the plurality of opening patterns of the second mask are symmetrical from left to right.

[0028] In an implementation, the corresponding shapes of the plurality of opening patterns of the second mask may be different from each other, and the opening patterns of the second mask may be shapes with straight or curved edges or circular shapes.

[0029] According to one implementation, a mask can be used to properly transfer the light-emitting element to a circular cell.

[0030] However, the effects of this disclosure are not limited to those described above, and various other effects are included in this specification. Attached Figure Description

[0031] Figure 1 This is a layout diagram showing a display device according to an embodiment.

[0032] Figure 2 It is shown Figure 1 An example image of an example of pixels.

[0033] Figure 3 It is shown Figure 1 Another example of pixels is shown in the example image.

[0034] Figure 4 It shows along Figure 2 A cross-sectional view of an example display panel cut by line A-A'.

[0035] Figure 5 This is a plan view showing the wafer.

[0036] Figure 6 This is a schematic diagram illustrating the light-emitting element transfer device.

[0037] Figure 7 This is a diagram illustrating the operation of the light-emitting element transfer device.

[0038] Figure 8 It is a plan view showing square-shaped units and square opening patterns.

[0039] Figure 9 It is a plan view showing the circular units and square opening patterns.

[0040] Figure 10 This is a plan view showing examples of various opening patterns corresponding to the circular unit C2 of this disclosure.

[0041] Figure 11 This is a plan view showing a mask component according to an embodiment.

[0042] Figure 12 This is a flowchart illustrating a method for transferring light-emitting elements according to an embodiment.

[0043] Figures 13 to 15 It shows the use Figure 12 An example diagram of the method for transferring mask components.

[0044] Figure 16This is a plan view showing a mask component according to another embodiment.

[0045] Figure 17 It shows the use Figure 16 An example diagram of the method for transferring mask components.

[0046] Figure 18 This is a plan view showing a mask component according to another embodiment.

[0047] Figure 19 It shows the use Figure 18 An example diagram of the method for transferring mask components. Detailed Implementation

[0048] The advantages and features of this disclosure, as well as the methods for implementing them, will become clear from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, this disclosure is not limited to the embodiments disclosed below, but can be implemented in various different forms, and exemplary embodiments are provided to fully disclose this disclosure. In some aspects, this disclosure is provided to fully inform those skilled in the art to which this disclosure pertains, and various aspects of this disclosure are defined by the scope of the claims.

[0049] When an element or layer is referred to as being "on" another element or layer, it includes all cases where the other layer or element is directly inserted onto or between the other element or layer. Throughout this specification, the same reference numerals denote the same parts. The shapes, dimensions, ratios, angles, quantities, and other properties disclosed in the drawings to illustrate embodiments are exemplary, and therefore this disclosure is not limited to what is shown.

[0050] Terms such as “first” and “second” may be used to describe various components, but these components should not be limited by these terms. The terms used herein are for distinguishing one component from others and are not limited by these terms. For example, without departing from the scope of this disclosure, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless otherwise stated, singular terms may include plural forms.

[0051] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, “an,” “a,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both the singular and the plural. For example, unless the context clearly indicates otherwise, “element” has the same meaning as “at least one element.” “At least one” should not be construed as limited to “an” or “a.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will also be understood that, when used in this specification, the terms “comprising” or “including” or “containing” and / or “containing” specify the presence of the stated feature, region, integral, step, operation, element, and / or component, but do not exclude the presence or addition of one or more other features, regions, integrals, steps, operations, elements, components, and / or groups thereof.

[0052] Given the measurements discussed and the errors associated with the measurement of a particular quantity, the terms “about” or “approximately” as used herein include the value and include a suitable range of deviations from the particular value as determined by one of ordinary skill in the art. The term “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the value.

[0053] As used herein, the term “substantially” means approximately or actually. The term “substantially equal” means approximately equal or actually equal. The term “substantially identical” means approximately identical or actually identical. The term “substantially identical” means approximately identical or actually identical. The term “substantially perpendicular” means approximately perpendicular or actually perpendicular.

[0054] For ease of description, spatial relative terms such as “below,” “under,” “down,” “above,” and “up” may be used herein to describe the relationship of one element or feature to another element(s) as shown in the accompanying drawings. It will be understood that, in addition to the orientation depicted in the drawings, the spatial relative terms are intended to also encompass different orientations of the device in use or operation. For example, if the device in the drawings is flipped, an element described as “below” or “under” other elements or features will be oriented “above” other elements or features. Thus, the term “below” can encompass both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptive terms used herein should be interpreted accordingly.

[0055] Embodiments are described herein with reference to cross-sectional views that serve as exemplary embodiments. Therefore, differences from the illustrated shapes are expected due to factors such as manufacturing techniques and / or tolerances. Consequently, the embodiments described herein should not be construed as limited to the shapes of the regions specifically shown herein, but should include deviations in shape, for example, due to manufacturing processes. For instance, regions shown or described as flat may typically have rough and / or non-linear features. Furthermore, sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to represent precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0056] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms, such as those defined in common dictionaries, shall be interpreted as having the same meaning as they have in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formalized sense unless expressly so defined herein.

[0057] It should be understood that the various embodiments of this disclosure and the terminology used herein are not intended to limit the technical features set forth herein to specific embodiments, and include various changes, equivalents, or substitutions for corresponding embodiments. Regarding the description of the drawings, similar reference numerals may be used to refer to similar or related elements. It should be understood that, unless the relevant context clearly indicates otherwise, the singular form of the noun corresponding to an item may include one or more items. As used herein, each of the phrases such as “A or B,” “at least one of A and B,” “A, B, or C,” and “at least one of A, B, and C” may include any one or all possible combinations of the items listed together in the corresponding one of the phrases.

[0058] It should be understood that, in the absence of the terms “operational” or “communicational”, if an element (e.g., a first element) is referred to as being “connected” or “linked” to, “attached to” or “connected to” another element (e.g., a second element), it means that the element can be directly (e.g., wired) connected to the other element, wirelessly connected to the other element, or connected to the other element via a third element.

[0059] Specific implementation methods will be described in this document with reference to the accompanying drawings.

[0060] Figure 1 This is a layout diagram showing a display device according to an embodiment. Figure 2 It is shown Figure 1 An example image of a pixel PX. Figure 3 It is shown Figure 1 Another example of a pixel PX.

[0061] Figure 1 An example is shown where the subregion SA unfolds instead of bending.

[0062] refer to Figures 1 to 3 A display device is a device that displays moving or still images, and is shown as an example of a smartwatch, but is not limited thereto. For example, a display device can be used as a display screen for portable electronic devices (such as mobile phones, smartphones, tablet PCs and watch phones, mobile communication terminals, laptops, e-books, portable multimedia players (PMPs), navigation devices, ultra-mobile PCs (UMPCs), etc.) and various other products (such as televisions, laptops, monitors, billboards, Internet of Things (IoT) devices, etc.).

[0063] The planar shape of the display panel 100 is not limited to a circle, and can be formed into another polygonal or elliptical shape. The display panel 100 can be formed flat, but is not limited to this. For example, the display panel 100 can be formed at the left and right ends, and can include curved portions with constant or varying curvature. In some aspects, the display panel 100 can be flexibly formed, such that it can be bent, curved, folded, or rolled.

[0064] The display panel 100 may include a display area DA and a non-display area NDA. The display area DA may refer to the part of the screen that is displayed, and the non-display area NDA may refer to the part of the screen that is not displayed.

[0065] The display area DA may include a circular shape on a plane. However, the invention is not limited thereto, and the display area DA may have various shapes on a plane, such as, for example, a rectangle or a rectangle with rounded corners (e.g., a square or a square with rounded corners), other polygons, or ellipses.

[0066] The non-display area NDA can be set around the display area DA. The non-display area NDA can be a border area. The non-display area NDA can surround the display area DA. However, it is not limited to this, and for example, the non-display area NDA may not be set in at least some areas of the peripheral area of ​​the display area DA.

[0067] Signal lines or drive circuits for applying signals to the display area DA or touch area can be disposed in the non-display area NDA. In another embodiment, the non-display area NDA may include a portion of the touch area, and a sensor component such as a pressure sensor may be disposed in that area.

[0068] The display panel 100 may further include pixels PX for displaying images, scan lines extending in a first direction DR1, and data lines extending in a second direction DR2. The pixels PX may be arranged in a matrix in the first direction DR1 and the second direction DR2.

[0069] like Figure 2 and Figure 3 As shown, each of pixels PX can include multiple subpixels RP, GP, and BP. Figure 2 and Figure 3 In this embodiment, each of the pixels PX includes three sub-pixels RP, GP and BP, referred to as the first sub-pixel RP, the second sub-pixel GP and the third sub-pixel BP, but the embodiments of this disclosure are not limited thereto.

[0070] The first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be connected to any one of the data lines and to at least one of the scan lines.

[0071] Each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a rectangular (e.g., square) or rhomboid planar shape. For example, as Figure 2 As shown, each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a rectangular planar shape having a short side in the first direction DR1 and a long side in the second direction DR2. Alternatively, as... Figure 3 As shown, each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a planar shape of a square or a rhombus with sides of equal length in the first direction DR1 and the second direction DR2.

[0072] like Figure 2 As shown, the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be arranged on the first direction DR1. Optionally, one of the second sub-pixel GP and the third sub-pixel BP is arranged with the first sub-pixel RP on the first direction DR1, and the other of the second sub-pixel GP and the third sub-pixel BP is arranged with the first sub-pixel RP on the second direction DR2. For example, as... Figure 3 As shown, the first sub-pixel RP and the second sub-pixel GP can be arranged on the first direction DR1, and the first sub-pixel RP and the third sub-pixel BP can be arranged on the second direction DR2.

[0073] Optionally, one of the first sub-pixel RP and the third sub-pixel BP can be arranged with the second sub-pixel GP in the first direction DR1, and the other of the first sub-pixel RP and the third sub-pixel BP can be arranged with the second sub-pixel GP in the second direction DR2.

[0074] The first sub-pixel RP may include a first light-emitting element that emits a first light, the second sub-pixel GP may include a second light-emitting element that emits a second light, and the third sub-pixel BP may include a third light-emitting element that emits a third light. Here, the first light may be light in the red wavelength band, the second light may be light in the green wavelength band, and the third light may be light in the blue wavelength band. The red wavelength band may be a wavelength band of about 600 μm to 750 μm, the green wavelength band may be a wavelength band of about 480 μm to 560 μm, and the blue wavelength band may be a wavelength band of about 370 μm to 460 μm, but the embodiments of this disclosure are not limited thereto.

[0075] Each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP may include an inorganic light-emitting element having an inorganic semiconductor as the light-emitting element. For example, the inorganic light-emitting element may be a flip-chip microLED (light-emitting diode), but embodiments of this disclosure are not limited thereto. For example, the inorganic light-emitting element may be a vertical microLED (light-emitting diode).

[0076] like Figure 2 and Figure 3 As shown, the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be substantially the same, but the embodiments of this disclosure are not limited thereto. At least one of the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be different from another of the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP. Optionally, any two of the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be substantially the same as each other and different from the remaining one of the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP. Optionally, the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be different from each other.

[0077] The display panel 100 may include a curved region BA, which is a region in which the panel is curved. Centered on the curved region BA, the display panel 100 may be divided into a main region MA located on one side of the curved region BA in the second direction DR2 and a sub-region SA located on the other side of the curved region BA in the second direction DR2.

[0078] The display area DA of the display panel 100 is located within the main area MA. In an embodiment, the outer edge portion of the display area DA, the entire curved area BA, and the entire sub-area SA within the main area MA may be non-display areas NDA. However, this is not limited to this, and the curved area BA and / or the sub-area SA may also include display areas.

[0079] If at least one of the remaining edges of the main region MA, excluding the edge connecting to the curved region BA, is curved or bent, then the display area can also be set on the corresponding edge. However, there are no restrictions; the curved or bent edge can become a non-display area where no image is displayed, or the display area and non-display area can be mixed in that area.

[0080] The curved region BA is connected to the main region MA on the other side in the second direction DR2. For example, the curved region BA can be connected via the lower short side of the main region MA. The width of the curved region BA (the width of the curved region BA in the first direction DR1) can be smaller than the width of the portion of the main region MA adjacent to the curved region BA (the width of the main region MA in the first direction DR1). The connection between the main region MA and the curved region BA can have an L-shaped cut.

[0081] In the curved region BA, the display panel 100 can be bent with a curvature in the thickness direction in the downward direction (i.e., in the opposite direction to the display surface). The curved region BA can have a constant radius of curvature, but is not limited to this, and can have different radii of curvature for each segment. When the display panel 100 is bent in the curved region BA, the surface of the display panel 100 can be flipped. In other words, the upward-facing side of the display panel 100 can be changed to face outward through the curved region BA, and then downward again.

[0082] Sub-region SA extends from the curved region BA. Sub-region SA can extend in a direction parallel to the main region MA, starting from the completion of the bending. Sub-region SA can overlap with the main region MA in the thickness direction of the display panel 100. The width of sub-region SA (the width of sub-region SA in the first direction DR1) can vary with the distance from the curved region BA, but is not limited to this.

[0083] The driver chip 20 may be located in the sub-region SA. The driver chip 20 may include an integrated circuit for driving the display panel 100. The integrated circuit may include an integrated circuit for the display and / or an integrated circuit for the touch unit. However, embodiments of this disclosure are not limited thereto, and the integrated circuit for the display and the integrated circuit for the touch unit may be configured as separate chips, or may be configured to be integrated into a single chip.

[0084] The pad portion can be located at one end of a sub-region SA of the display panel 100. The pad portion can include multiple display signal wiring pads and touch signal wiring pads. The driving substrate 30 can be connected to the pad portion at one end of the sub-region SA of the display panel 100. The driving substrate 30 can be a flexible printed circuit board or a film.

[0085] Figure 4 It shows along Figure 2 A cross-sectional view of an example of a display panel 100 cut by line A-A'.

[0086] refer to Figure 4 The display panel 100 may include a thin-film transistor layer (TFTL) and a light-emitting element (LE) disposed on a substrate SUB. The TFTL may be a layer in which thin-film transistors (TFTs) are formed.

[0087] The thin-film transistor layer (TFTL) may include an active layer (ACT), a first gate layer (GTL1), a second gate layer (GTL2), a first data metal layer (DTL1), a second data metal layer (DTL2), a third data metal layer (DTL3), and a fourth data metal layer (DTL4). Furthermore, the TFTL includes a buffer film (BF), a gate insulating film (130), a first interlayer insulating film (141), a second interlayer insulating film (142), a first planarization film (160), a first insulating film (161), a second planarization film (180), and a second insulating film (181).

[0088] The substrate SUB can be a base substrate or base component used to support a display device. The substrate SUB can be a rigid substrate formed of glass, but embodiments of this disclosure are not limited thereto. The substrate SUB can be a flexible substrate that can be bent, folded, rolled, etc. In this case, the substrate can include an insulating material such as, for example, a polymer resin (such as, for example, polyimide (PI)).

[0089] A buffer film (BF) can be disposed on one side of the substrate (SUB). The buffer film (BF) can be a membrane used to prevent the penetration of air or moisture. The buffer film (BF) can comprise multiple inorganic films stacked in alternating layers. For example, the buffer film (BF) can be formed as multiple inorganic films stacked in alternating layers of one or more of silicon nitride layers, silicon oxide nitride layers, silicon oxide layers, titanium oxide layers, and aluminum oxide layers. The buffer film (BF) can be omitted.

[0090] The active layer ACT can be disposed on the buffer film BF. The active layer ACT can include silicon semiconductors such as polycrystalline silicon, monocrystalline silicon, low-temperature polycrystalline silicon, and amorphous silicon, or it can include oxide semiconductors.

[0091] The active layer ACT may include a channel TCH of a thin-film transistor (TFT), a first electrode TS, and a second electrode TD. The channel TCH of the TFT may be a region on a third-direction DR3, which is the thickness direction of the substrate SUB, that overlaps with the gate electrode TG of the TFT. The first electrode TS of the TFT may be disposed on one side of the channel TCH, and the second electrode TD may be disposed on the other side of the channel TCH. The first electrode TS and the second electrode TD of the TFT may be regions on the third-direction DR3 that do not overlap with the gate electrode TG. The first electrode TS and the second electrode TD of the TFT may be regions in which silicon semiconductor or oxide semiconductor is doped with ions to make the region conductive.

[0092] The gate insulating film 130 can be disposed on the active layer ACT. The gate insulating film 130 can be formed of an inorganic film such as, for example, a silicon nitride layer, a silicon oxide nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0093] The first gate layer GTL1 can be disposed on the gate insulating film 130. The first gate layer GTL1 may include the gate electrode TG of the thin-film transistor TFT and the first capacitor electrode CAE1. The first gate layer GTL1 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloys.

[0094] The first interlayer insulating film 141 may be disposed on the first gate layer GTL1. The first interlayer insulating film 141 may be formed of an inorganic film such as, for example, a silicon nitride layer, a silicon oxide nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0095] The second gate layer GTL2 can be disposed on the first interlayer insulating film 141. The second gate layer GTL2 may include a second capacitor electrode CAE2. The second gate layer GTL2 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloys.

[0096] The second interlayer insulating film 142 can be disposed on the second gate layer GTL2. The second interlayer insulating film 142 can be formed of an inorganic film such as, for example, a silicon nitride layer, a silicon oxide nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0097] A first data metal layer DTL1, including a first connecting electrode CE1, a first sub-pad, and a data line, can be disposed on the second interlayer insulating film 142. The data line can be integrally formed with the first sub-pad, but the embodiments of this disclosure are not limited thereto. The first data metal layer DTL1 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or their alloys.

[0098] The first connecting electrode CE1 can be connected to the first electrode TS or the second electrode TD of the thin-film transistor TFT through the first contact hole CT1 passing through the first interlayer insulating film 141 and the second interlayer insulating film 142.

[0099] The first planarization film 160 can be configured to planarize the steps caused by the active layer ACT, the first gate layer GTL1, the second gate layer GTL2, and the first data metal layer DTL1 on the first data metal layer DTL1. The first planarization film 160 can be formed of an organic film such as, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0100] The second data metal layer DTL2 can be disposed on the first planarization film 160. The second data metal layer DTL2 may include a second connection electrode CE2 and a second sub-pad. The second connection electrode CE2 can be connected to the first connection electrode CE1 through a second contact hole CT2 passing through the first insulating film 161 and the first planarization film 160. The second data metal layer DTL2 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or their alloys.

[0101] The second planarization film 180 can be disposed on top of the second data metal layer DTL2. The second planarization film 180 can be formed of an organic film such as, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0102] The third data metal layer DTL3 can be disposed on the second planarization film 180. The third data metal layer DTL3 may include a third connection electrode CE3 and a third sub-pad. The third connection electrode CE3 can be connected to the second connection electrode CE2 through a third contact hole CT3 passing through the second insulating film 181 and the second planarization film 180. The third data metal layer DTL3 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloys.

[0103] The third planarization film 190 can be disposed on top of the third data metal layer DTL3. The third planarization film 190 can be formed of an organic film such as, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0104] A fourth data metal layer, DTL4, can be disposed on the third planarization film 190. The fourth data metal layer, DTL4, may include an anode pad electrode (APD), a cathode pad electrode (CPD), and a fourth sub-pad. The anode pad electrode (APD) can be connected to the third connection electrode (CE3) through a fourth contact hole (CT4) passing through the third planarization film 190. The cathode pad electrode (CPD) can be provided with a first power supply voltage as a low-potential voltage. The fourth data metal layer, DTL4, can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0105] A transparent conductive layer (TCO) may be disposed on each of the anode pad electrode (APD) and cathode pad electrode (CPD) to enhance adhesion to the first contact electrode (CTE1) and the second contact electrode (CTE2) of the light-emitting element (LE). The transparent conductive layer (TCO) may be formed of a transparent conductive oxide such as, for example, indium tin oxide (ITO) and indium zinc oxide (IZO). In other embodiments, the transparent conductive layer (TCO) may be omitted.

[0106] A protective film can be disposed on the anode pad electrode (APD), the cathode pad electrode (CPD), and the first pad. The protective film can be configured such that it covers the edges of the anode pad electrode (APD), the cathode pad electrode (CPD), and the first pad. The protective film can be formed from an inorganic film such as, for example, a silicon nitride layer, a silicon oxide nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. In other embodiments, the protective film may be omitted.

[0107] The light-emitting element (LE) is shown as a flip-chip microLED, in which a first contact electrode CTE1 and a second contact electrode CTE2 are respectively disposed opposite to an anode pad electrode APD and a cathode pad electrode CPD. The LE can be an inorganic light-emitting element formed from an inorganic material such as GaN. The LE can have lengths in a first direction DR1, a second direction DR2, and a third direction DR3, each ranging from a few micrometers to several hundred micrometers. For example, the LE can have lengths in the first direction DR1, the second direction DR2, and the third direction DR3 of approximately 100 μm or less.

[0108] Light-emitting elements (LEs) can be formed by growth on a semiconductor substrate, such as, for example, a silicon wafer. Each LE can be directly transferred from the silicon wafer to the anode pad electrode (APD) and cathode pad electrode (CPD) of the substrate SUB. In this case, the first contact electrode (CTE1) and the anode pad electrode (APD) can be bonded together by a bonding process. In some aspects, the second contact electrode (CTE2) and the cathode pad electrode (CPD) can be bonded to each other by a bonding process. The first contact electrode (CTE1) and the anode pad electrode (APD) can be electrically connected to each other by a bonding electrode (23). Furthermore, the second contact electrode (CTE2) and the cathode pad electrode (CPD) can be electrically connected to each other by the bonding electrode (23).

[0109] In this embodiment, the bonding electrode 23 may be disposed on one side of the light-emitting element LE. The bonding electrode 23 may be a bonding material bonded by pressure fusion bonding using a laser. Here, pressure fusion bonding refers to a state in which the bonding electrode 23 is heated and melted to melt and mix the light-emitting element LE, the anode pad electrode APD, and the cathode pad electrode CPD, and then cooled and solidified when the laser supply is terminated. The conductivity of the light-emitting element LE, the anode pad electrode APD, and the cathode pad electrode CPD is maintained while cooling and solidifying from the molten and mixed state. Therefore, the anode pad electrode APD and the cathode pad electrode CPD can be electrically connected and physically connected to the light-emitting element LE, respectively. Therefore, the bonding electrode 23 may be disposed on the first contact electrode CTE1 and the second contact electrode CTE2 of the light-emitting element LE.

[0110] The bonding electrode 23 may include, for example, Au, AuSn, PdIn, InSn, NiSn, Au-Au, AgIn, AgSn, Al, Ag, or carbon nanotubes (CNTs). Each of these materials may be used alone or in combination with one or more. Depending on the type of bonding electrode 23, the bonding electrode 23 may be formed on the pad electrode by deposition or by various methods such as screen printing.

[0111] Alternatively, each of the light-emitting elements (LEs) can be transferred to the anode pad electrode (APD) and cathode pad electrode (CPD) of the substrate (SUB) using a transfer member. Reference will be made herein. Figures 5 to 19 Describe it.

[0112] Each of the light-emitting elements (LEs) can be a light-emitting structure comprising a base substrate SPUB, an n-type semiconductor NSEM, an active layer MQW, a p-type semiconductor PSEM, a first contact electrode CTE1, and a second contact electrode CTE2.

[0113] The base substrate SPUB can be a sapphire substrate, but the embodiments disclosed herein are not limited to this.

[0114] The n-type semiconductor NSEM can be disposed on one side of the base substrate SPUB. For example, the n-type semiconductor NSEM can be disposed on the bottom surface of the base substrate SPUB. The n-type semiconductor NSEM can include GaN doped with n-type conductive dopants such as Si, Ge, Sn, etc.

[0115] The active quantum well (MQW) layer can be disposed on a portion of one side of an n-type semiconductor NSEM. The active MQW layer can comprise materials having a single quantum well structure or a multiple quantum well structure. If the active MQW layer comprises materials with a multiple quantum well structure, it can be a stacked structure in which multiple well layers and multiple blocking layers alternately stacked on top of each other. In this case, the well layers can be formed of InGaN, and the blocking layers can be formed of GaN or AlGaN, but are not limited thereto. Optionally, the active MQW layer can be a structure in which semiconductor materials with large energy band gaps and semiconductor materials with small energy band gaps are alternately stacked on top of each other, or it can comprise three or five different semiconductor materials based on the wavelength of the light to be emitted.

[0116] In one embodiment, a flip-chip light-emitting element is shown in which the first contact electrode CTE1 and the second contact electrode CTE2 are disposed on one side of the light-emitting element LE. However, it is not limited to this and can also be a vertical light-emitting element in which the first contact electrode CTE1 and the second contact electrode CTE2 are disposed on both ends of the light-emitting element LE.

[0117] Figure 5 This is a plan view showing the wafer 10.

[0118] refer to Figure 5 Wafer 10 can be a semiconductor substrate suitable for epitaxial growth of semiconductors. For example, wafer 10 can be a substrate comprising materials such as silicon (Si), sapphire, SiC, GaN, GaAs, or ZnO. If wafer 10 can be successfully used for manufacturing light-emitting elements ( Figure 4 In the epitaxial growth of LE (in the chip), the type, material and shape of the wafer 10 are not particularly limited.

[0119] The wafer 10 may include at least one of a notch NC and a flat region FZ that indicate the crystal orientation of the wafer 10.

[0120] The flat region FZ is the area that planarizes the crystal surface of wafer 10. The notch NC is a triangular groove that indicates the crystal orientation of wafer 10. In another variation, alignment marks can be used instead of the flat region FZ or the notch NC.

[0121] In an implementation, the chip 10 may have a diameter of approximately 8 inches, 10 inches, or 12 inches.

[0122] Figure 6 This is a schematic diagram illustrating the light-emitting element transfer device. Figure 7 This is a diagram illustrating the operation of the light-emitting element transfer device.

[0123] refer to Figure 6 The light-emitting element transfer device (hereinafter referred to as the transfer device) can be used to transfer the light-emitting element LE on the donor substrate DS to the target substrate TS.

[0124] The donor substrate DS can be a wafer on which light-emitting elements (LEs) have already been grown, but is not limited to this. The target substrate TS can be a relay substrate, but is not limited to this. The target substrate TS can also be a circuit board.

[0125] The transfer device may include a support member ST, a mask member 300, a laser emitting member 500 (also referred to herein as a laser irradiation member), and a controller.

[0126] The support member ST may have an upper surface parallel to a plane defined by a first direction DR1 and a second direction DR2 that are perpendicular to each other, and a target substrate TS on which a plurality of light-emitting elements LE are disposed may be placed on the upper surface.

[0127] The support member ST can be a loading plate and can be formed into a polygonal plate shape such as a rectangle (e.g., a square). Alternatively, the support member ST can be formed into a circular plate shape, an elliptical plate shape, or other planar plate shapes. In an embodiment, the support member ST can fix the target substrate TS.

[0128] The laser emitting member 500 is disposed opposite to the front side of the donor substrate DS and can emit laser light toward the donor substrate DS to irradiate the donor substrate DS. The laser emitting member 500 can be disposed on the uppermost surface of the manufacturing apparatus. The laser emitting member 500 can emit laser light toward the support member ST disposed on the lowermost surface of the manufacturing apparatus, and the light emitted from the laser emitting member 500 can irradiate (and be incident on) a plurality of light-emitting elements LE disposed on the donor substrate DS.

[0129] The laser emitting component 500 may include a laser source 510 and an optical system 530.

[0130] Laser source 510 is a device that can generate laser light by providing energy from an external source, and can be configured to generate laser light, such as solid-state lasers (such as YAG lasers, ruby ​​lasers, glass lasers, YVO4 lasers, LD lasers, fiber lasers), liquid lasers (such as pigment lasers), excimer lasers (ArF lasers, KrF lasers, XeCl lasers, XeF lasers, etc.), gas lasers (such as Ar lasers, He-Ne lasers, and CO2 lasers), semiconductor lasers, free-electron lasers, etc.

[0131] The optical system 530 may include multiple lenses. The optical system 530 may receive a beam of laser light from the laser source 510 and perform optical dispersion to enable regional heating of a predetermined area.

[0132] The laser emitted from the optical system 530 irradiates the light-emitting element LE, which is mounted on the donor substrate DS on the support member ST, and can heat a predetermined area of ​​the light-emitting element LE.

[0133] The mask component 300 is disposed between the support component ST and the laser emitting component 500.

[0134] Mask component 300 may include a mask comprising a base layer and a light-blocking pattern layer. The base layer is formed as a transparent or translucent flat plate and comprises at least one transparent material such as glass, quartz, silicon, etc. The base layer has light-transmitting properties that support the transmission of laser light in opposite directions (i.e., forward or backward). The light-blocking pattern layer is disposed on one surface of the base layer and may have light-blocking or reflective properties, and may include an opening pattern. The opening pattern is a region that does not have light-blocking or reflective properties and transmits light. The light-blocking pattern layer can be formed by patterning a material with light-blocking properties using methods such as, for example, optical processing. The light-blocking material may include, for example, chromium (Cr), chromium oxynitride (CrON), chromium nitride (CrN), molybdenum silicate (MoSiO), molybdenum silicate (MoSiON), tantalum oxide (TaO), tantalum silicate (TaSiO), etc. The light-blocking pattern layer comprises light-blocking material in areas outside the opening pattern.

[0135] An openwork pattern includes multiple openings. For example... Figure 7 As shown, the laser beam emitted by the laser emitting member 500 can pass through the opening in the mask member 300, but is blocked by the rest of the mask member 300. Therefore, the opening defines a transmission area for the laser beam. Here, light emitted from the laser emitting member 500 is transmitted through one of the multiple openings in the opening pattern and illuminates (incidentally) multiple light-emitting elements LE disposed on the target substrate TS. (Refer to...) Figure 10 and Figure 11 Detailed description of mask component 300.

[0136] The mask component 300 may include, for example, a drive component of a motor and a rotary bearing for rotating the mask. The mask component 300 can rotate the mask according to instructions from a controller.

[0137] The controller is connected to the laser emitting component 500 and the mask component 300, and is configured to perform a process that supports the transfer of the light-emitting element LE by controlling the operation of the laser emitting component 500 and the mask component 300. For example, the controller is provided with an interface (not shown) for sending and receiving signals between the components described above (such as, for example, the laser emitting component 500 and the mask component 300). The controller is configured to perform the process for transferring the light-emitting element LE based on detection results from a camera, sensor, etc. For example, the controller identifies the location of the target transfer area based on an image captured by a camera, aligns the mask of the mask component 300, for example, by rotating and positioning the mask based on the detection results, and performs control related to the operation of the transfer machine that emits a laser and irradiates the target transfer area with the laser.

[0138] Figure 8 It is a plan view showing the square-shaped unit C1 and the square opening pattern. Figure 9 It is a plan view showing the circular unit C2 and the square opening pattern.

[0139] Target substrate ( Figure 6 The TS in the diagram can have a size corresponding to the area of ​​multiple units or to the area used to form multiple display panels. Figure 1 The region corresponding to cell 100 in the diagram. In the display device manufacturing process after the transfer process, the target substrate TS can be divided into regions, each comprising one cell.

[0140] Here, the cell can be the region in the target substrate TS to which the light-emitting element LE is to be transferred.

[0141] refer to Figure 8 The diagram illustrates a transfer region B1 formed using a square opening pattern within a square-shaped cell C1. For example, a first transfer region B11 of cell C1 is implemented using a square opening pattern. Subsequently, the opening pattern is moved to an area where no transfer was performed to implement a second transfer region B12. Then, the square opening pattern is moved to an area where no transfer was performed to implement a third transfer region B13. In this way, the transfer region B1 can be implemented across the entire area of ​​cell C1. In this way, transfer can be appropriately performed using a square opening pattern across the entire area of ​​the square cell C1.

[0142] refer to Figure 9The diagram illustrates a transfer region B2 formed using a square opening pattern in a circular cell C2. For example, a first transfer region B21 of the circular cell C2 is implemented using a square opening pattern. Then, a second transfer region B22 is implemented by moving the opening pattern to an area where no transfer was performed. Subsequently, a third transfer region B23 is implemented by moving the pattern to an area where no transfer was performed. In this way, the transfer region B2 can be implemented for the entire area of ​​the circular cell C2. However, when transfer is performed using a square opening pattern for the entire circular cell C2, the transfer region B2 is formed outside the edge of the circular cell C2, thus raising the possibility that the light-emitting element LE might transfer to an area outside the circular cell C2.

[0143] Figure 10 This is a plan view showing examples of various opening patterns corresponding to the circular unit C2 of this disclosure.

[0144] The circular unit C2 is symmetrical about its center O from top to bottom and from left to right. For ease of explanation, when the circular unit C2 is divided into four quadrants from top to bottom and from left to right through the center O, the upper right part is called the first quadrant, the upper left part is called the second quadrant, the lower left part is called the third quadrant, and the lower right part is called the fourth quadrant. The first quadrant is divided by multiple lines parallel to the axis on the second direction DR2 and multiple lines parallel to the axis on the first direction DR1, and each of the different shaped partitions is labeled. For example, 11 regions of different shapes divided angularly along the circumference of the circle in a clockwise direction can be labeled as b1 to b11, and a square region of the same size located at the center of the first quadrant can be labeled as b12. In the example of preparing the same opening pattern as the regions labeled b1 to b12, the transfer region that completely corresponds to the entire region of the first quadrant can be implemented using 12 opening patterns. In other words, the transfer region of the circular unit C2 can be implemented using opening patterns corresponding to the regions marked b1 to b12 respectively, and the shape and size of the transfer region can prevent the light-emitting element LE from being transferred to the outside of the first quadrant of the circular unit C2.

[0145] Similarly, the second quadrant is divided by multiple lines parallel to the axis of the second direction DR2 and multiple lines parallel to the axis of the first direction DR1, and each of the regions with different shapes is marked. For example, 11 regions of different shapes divided at an angle along the circumference of the circle in a counterclockwise direction can be marked as a1 to a11, and a square region of the same size located at the center of the second quadrant can be marked as a12. In an example of preparing the same opening pattern as the regions marked a1 to a12, the transfer region corresponding completely to the entire region of the second quadrant can be implemented using 12 opening patterns. In other words, the transfer region of the circular unit C2 can be implemented using opening patterns corresponding to the regions marked a1 to a12 respectively, and the shape and size of the transfer region can prevent the light-emitting element LE from being transferred to the outside of the second quadrant of the circular unit C2.

[0146] The interval lines in each of the first and second quadrants can be symmetrical to each other. Therefore, the opening patterns in each of the first and second quadrants can also be symmetrical to each other. For example, the opening pattern corresponding to region a1 in the second quadrant and the opening pattern corresponding to region b1 in the first quadrant are symmetrical to each other, and the opening pattern corresponding to region a2 in the second quadrant and the opening pattern corresponding to region b2 in the first quadrant are symmetrical to each other. In this way, the same number of opening patterns in the first quadrant and the opening patterns in the second quadrant are symmetrical to each other.

[0147] In some implementations, the transfer region corresponding entirely to the entire area of ​​the third quadrant can be achieved by rotation and using 12 opening patterns corresponding to areas b1 to b12 of the first quadrant, respectively. In some aspects, the transfer region corresponding entirely to the entire area of ​​the fourth quadrant can be achieved by rotation and using 12 opening patterns corresponding to areas a1 to a12 of the second quadrant, respectively.

[0148] In other words, the transfer region that corresponds completely to the entire region of the circular unit C2 can be realized using opening patterns a1 to a12 and opening patterns b1 to b12.

[0149] Figure 11 This is a plan view showing the mask component 300 according to an embodiment.

[0150] Figure 11 The mask component 300 and Figure 6 The mask component 300 corresponds to this.

[0151] refer to Figure 11 The circular mask component 300 includes a pair of first masks L and second masks R.

[0152] The first mask L includes opening patterns of different shapes. Each opening pattern can be a shape with straight edges and curved edges (e.g., one edge of which is replaced by a polygon with a curved shape such as a rectangle or triangle). For example, each opening pattern can be a shape with straight edges, curved edges, or a combination of one or more straight edges and one or more curved edges. In the example, each opening pattern of the first mask L can be associated with a circular unit ( Figure 10 The corresponding one of the opening patterns in regions a1 to a12 of the circular unit C2). The first mask L has an opening pattern set at an angle relative to its center point.

[0153] The second mask R includes opening patterns of different shapes. Each of the opening patterns can be a shape with straight and curved edges (e.g., one edge of which is replaced by a polygon with a curved shape such as a rectangle and a triangle). For example, each opening pattern in the second mask R can be associated with a circular unit ( Figure 10 The corresponding one of the opening patterns in regions b1 to b12 of the circular unit C2). The second mask R has an opening pattern set at an angle relative to its center point.

[0154] The first mask L and the second mask R can have the same diameter.

[0155] The first mask L and the second mask R can form dozens to hundreds of opening patterns at an angle relative to the center.

[0156] The smaller the radius of the first mask L and the second mask R, the more vibration or motor load caused by the rotational speed can be minimized, thus enabling stable operation.

[0157] The opening patterns of the first mask L and the second mask R have shapes that are symmetrical to each other on both sides.

[0158] Embodiments of this disclosure include overlapping the opening patterns of a first mask L and a second mask R with respect to defining a transfer region. The mask member 300 can rotate the first mask L and the second mask R such that the opening patterns of the first mask L and the second mask R overlap in a straight line, and this overlap can define the transfer region.

[0159] Figure 12 This is a flowchart illustrating a method for transferring light-emitting elements (LEs) according to an embodiment.

[0160] In the following text, reference will be made to Figures 10 to 12 Description via Figure 6A method for transferring a light-emitting element (LE) using a light-emitting element transfer apparatus. In the description of the methods and processes herein, operations may be performed in a different order than those shown and / or described, or in a different order or at different times. Some operations may be omitted from the flowchart, one or more operations may be repeated, or additional operations may be added. Descriptions of elements as "can be set," "can be formed," "can emit," etc., include methods, processes, and techniques for performing these operations according to exemplary aspects described herein.

[0161] First, the method may include checking the shape of the opening patterns of the first mask L and the second mask R in association with finding an opening pattern having the same shape as the transfer target region of the cell (step S110). For example, in step S110, the method may include determining an opening pattern that is the same as the transfer target region of the cell from the opening patterns of the first mask L and the second mask R.

[0162] Second, the method may include controlling the mask member 300 via a controller to cause an overlap between the corresponding opening pattern of the first mask L and the second mask R, which has the same shape as the transfer target region, and the widest opening pattern of the remaining mask (e.g., the second mask R) (step S120). For example, the method may include rotating at least one of the first mask L and the second mask R via a controller such that the opening pattern of the first mask L overlaps with the widest opening pattern of the opening patterns of the second mask R, wherein the shape of the opening pattern of the first mask L is the same as the shape of the transfer target region. In an alternative example, the method may include rotating at least one of the first mask L and the second mask R via a controller such that the opening pattern of the second mask R overlaps with the widest opening pattern of the opening patterns of the first mask L, wherein the shape of the opening pattern of the second mask R is the same as the shape of the transfer target region.

[0163] The first mask L and the second mask R can each rotate at high speed.

[0164] Third, the method may include emitting a laser and irradiating the overlapping opening pattern of the first mask L and the second mask R with the laser (step S130).

[0165] The method may include emitting a laser while rotating a first mask L and a second mask R, and illuminating the overlapping opening pattern of the first mask L and the second mask R. For example, the method may include illuminating the opening pattern formed by the overlap between the opening patterns of the first mask L and the widest opening pattern of the second mask R with a laser at the instant when the opening pattern of the first mask L and the widest opening pattern of the second mask R overlap and are aligned in a straight line. For example, if the pattern formed by the overlapping opening patterns of the first mask L and the second mask R is the same as the desired opening pattern, the method may include emitting and / or guiding a laser such that the overlapping opening pattern is illuminating at the instant when the opening patterns overlap and are aligned in a straight line, thereby illuminating the overlapping opening pattern with a laser without reducing the rotation speed or stopping the rotation of the first mask L and the second mask R.

[0166] Fourth, the method may include moving the mask component 300 to a next transfer target area (step S140). For example, the method may include moving a stage (not shown) on which the mask is set or to which the mask is fixed by providing a control signal from a controller. In the example, the stage may be moved based on the control signal.

[0167] The method may include transferring the light-emitting element to all cell regions by repeating steps S110 to S140 until there is no next target region to transfer.

[0168] Figures 13 to 15 It shows the use Figure 12 An example diagram of the transfer method of the mask component 300.

[0169] refer to Figure 13 It describes the settings and Figure 10 The method for transferring the region corresponding to region a1.

[0170] The method may include setting a first mask L and a second mask R such that a portion of the first mask L overlaps with a portion of the second mask R.

[0171] This method may include selection Figure 10 Region a1 is used as the target region for transfer.

[0172] The method may include finding an opening pattern having the same shape as the region a1 of the transfer target. An opening pattern having the same shape as the region a1 of the transfer target is found among the opening patterns of the first mask L and the second mask R. Since the opening pattern L1 of the first mask L corresponds to the region a1, the method may include rotating the first mask L and the second mask R respectively such that the opening pattern L1 of the first mask L and the opening pattern R11 of the second mask R overlap.

[0173] The method may include emitting a laser such that the laser illuminates the region in which opening patterns L1 and R11 overlap. Therefore, the laser passes through opening pattern L1, which is the smaller of the two opening patterns, and illuminates the transfer region corresponding to region a1.

[0174] refer to Figure 14 It describes the settings and Figure 10 The method for transferring the region corresponding to region b7.

[0175] The method may include setting a first mask L and a second mask R such that the first mask L and the second mask R partially overlap each other.

[0176] The method may include finding an opening pattern having the same shape as region b7. An opening pattern having the same shape as region b7 is found among the opening patterns of the first mask L and the second mask R. Since the opening pattern R7 of the second mask R corresponds to region b7, the method may include rotating each of the first mask L and the second mask R such that the opening pattern L11 of the first mask L and the opening pattern R7 of the second mask R overlap each other.

[0177] The method may include emitting a laser such that the laser illuminates the region in which the opening patterns L11 and R7 overlap. Therefore, the laser passes only through the smaller of the two opening patterns, L11 and R7, thereby illuminating the transfer region corresponding to region b7.

[0178] refer to Figure 15 It describes the settings and Figure 10 The method for transferring the region corresponding to region a12.

[0179] The method may include setting a first mask L and a second mask R such that a portion of the first mask L overlaps with a portion of the second mask R.

[0180] The method may include finding an opening pattern with the same shape as region a12 among the opening patterns of the first mask L and the second mask R. Since both the opening pattern L12 of the first mask L and the opening pattern R12 of the second mask R correspond to region a12, the method may include rotating the first mask L and the second mask R respectively such that the opening pattern L12 of the first mask L and the opening pattern R12 of the second mask R overlap.

[0181] The method may include emitting a laser such that the laser illuminates the region where opening patterns L12 and R12 overlap. Therefore, the laser passes through both opening patterns L12 and R12 and illuminates the transfer region corresponding to region a12.

[0182] Figure 16 This is a plan view showing a mask member 301 according to another embodiment. Figure 17 It shows the use Figure 16 An example diagram of the transfer method of the mask component 301.

[0183] Figure 16 The mask component 301 and Figure 11 The difference between the mask component 300 and the mask component 301 is that the mask component 301 is a single structure (i.e., not formed in pairs) and has a rectangular shape (e.g., a square shape) instead of a circle.

[0184] References in this article Figure 10 and Figure 16 Description of embodiments of this disclosure.

[0185] The mask component 301 includes opening patterns L2, L3...L9 and opening patterns R2, R3...R9 of different shapes. Each of the opening patterns L2, L3...L9 and R2, R3...R9 can be a shape that includes curved and straight edges (e.g., one edge replaced by a curved shape such as a rectangle (e.g., a square) and a triangle). In an exemplary embodiment, 16 opening patterns are provided in one mask component 301, but embodiments of this disclosure are not limited thereto.

[0186] For example, the opening pattern of the mask component 301 can be respectively matched with the circular unit ( Figure 10 The opening patterns in regions a1 to a12 of the circular unit C2 correspond to each other. The shape of the circular unit can be transferred by combining the various opening patterns. The various opening patterns can be set as a matrix.

[0187] The method may include finding an opening pattern that matches the transfer target region from the opening pattern of the mask member 301, and superimposing the opening pattern on the transfer target region.

[0188] refer to Figure 17 It describes the settings and Figure 10 The method for transferring the region corresponding to region a2.

[0189] This method may include selection Figure 10 Region a2 is used as the target region for transfer.

[0190] The method may include finding an opening pattern with the same shape as region a2 from among the opening patterns in mask member 301. The method may include superimposing the opening pattern onto the transfer target region and emitting a laser such that the laser illuminates the opening pattern.

[0191] The method may include moving the mask member 301 to the next transfer target area and performing a transfer (i.e., transferring the light-emitting element) on the next transfer target area.

[0192] Figure 18 This is a plan view showing a mask member 302 according to another embodiment. Figure 19 It shows the use Figure 18 An example diagram of the transfer method of the mask component 302.

[0193] Figure 18 The mask component 302 and Figure 11 The difference between the mask component 300 and the mask component 302 is that, for the mask component 302, the opening patterns of the first mask L and the second mask R are asymmetrical to each other.

[0194] refer to Figure 10 and Figure 18 Description of embodiments of this disclosure.

[0195] The mask component 302 includes a first mask L and a second mask R, wherein the first mask L includes an opening pattern L3 in a single row shape, the second mask R includes an opening pattern R3, the opening pattern R3 includes opening patterns R31, R32, R33..., and each of the opening patterns R31, R32, R33... can have a size and shape corresponding to a single light-emitting element LE.

[0196] Each opening pattern R31, R32, R33... of the second mask R has the same size and shape as a single light-emitting element, but the corresponding distances of the opening patterns R31, R32, R33... from the center of the second mask R can be different from each other. Figure 18 In the example, the opening patterns R31, R32, R33... are circular, but not limited to them, and can be rectangular (e.g., square) based on the planar shape of the light-emitting element LE to be transferred. The corresponding diameters of the opening patterns R31, R32, R33... can be the same as the diameter of the light-emitting element LE to be transferred.

[0197] The first opening pattern R31 can be positioned closer to the center of the circle than the second opening pattern R32. The second opening pattern R32 can be positioned closer to the center of the circle than the third opening pattern R33. Similarly, as the number of the opening patterns increases, each additional opening pattern (e.g., the fourth opening pattern (not shown), the fifth opening pattern (not shown), etc.) can be positioned further away from the center of the circle.

[0198] refer to Figure 19 The method may include setting a first mask L and a second mask R such that portions of the first mask L and portions of the second mask R overlap.

[0199] The method may include rotating each of a first mask L and a second mask R such that the opening pattern L3 of the first mask L and the opening pattern R3 of the second mask R overlap. The method may include emitting a laser such that the laser illuminates the region where the opening patterns L3 and R3 overlap. Due to the illumination of this region, a single light-emitting element LE can be transferred to a desired transfer position P1.

[0200] In summarizing the specific embodiments, those skilled in the art will understand that many variations and modifications can be made to the embodiments without substantially departing from the principles of this disclosure. Therefore, the embodiments of this disclosure disclosed are used in a general and descriptive sense and not for limiting purposes.

Claims

1. A mask member comprising: a first mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the first mask includes an opening pattern; and a second mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the second mask includes a plurality of opening patterns disposed angularly with respect to a center of the second mask, wherein the mask member defines a transfer region by overlapping the opening pattern of the first mask and an opening pattern of the plurality of opening patterns of the second mask. 2.The mask member according to claim 1, wherein: the opening pattern of the first mask is disposed as a plurality of opening patterns disposed angularly with respect to a center of the first mask, and the plurality of opening patterns of the first mask and the plurality of opening patterns of the second mask are left-right symmetrical.

3. The mask member according to claim 1, wherein respective shapes of the plurality of opening patterns of the second mask are different from each other.

4. The mask member according to claim 3, wherein the opening pattern of the second mask is a shape having a straight line shape and a curved shape edge or is a circular shape. 5.The mask member according to claim 1, wherein: the base layer has a flat plate shape, is formed of a transparent material, and has a light-transmitting property, the light-blocking pattern layer of the first mask includes a material having a light-blocking property in a region of the first mask different from the opening pattern of the first mask, and the light-blocking pattern layer of the second mask includes a material having a light-blocking property in a region of the second mask different from the plurality of opening patterns of the second mask.

6. The mask member of claim 1, wherein, the first mask and the second mask are each a mask member capable of being disposed rotatably. 7.The mask member according to claim 1, wherein: the opening pattern of the first mask has a single row shape, and each of the plurality of opening patterns of the second mask has a size and a shape corresponding to a single chip. 8.A transfer apparatus for transferring light emitting elements, the transfer apparatus comprising: a laser emission member; a support member disposed below the laser emission member and supporting a target substrate; and a mask member disposed between a donor substrate disposed on the target substrate and the laser emission member and defining a laser transfer region, wherein the mask member includes: a first mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the first mask includes an opening pattern; and a second mask including a light-blocking pattern layer and a base layer, wherein the light-blocking pattern layer of the second mask includes a plurality of opening patterns disposed angularly with respect to a center of the second mask, wherein the transfer apparatus defines the laser transfer region by overlapping the opening pattern of the first mask and an opening pattern of the plurality of opening patterns of the second mask. 9.The transfer apparatus according to claim 8, wherein: the opening pattern of the first mask is disposed as a plurality of opening patterns disposed angularly with respect to a center of the first mask, and the plurality of opening patterns of the first mask and the plurality of opening patterns of the second mask are left-right symmetrical. ​ 10. The transfer device of claim 8, wherein, Respective shapes of the plurality of opening patterns of the second mask are different from each other.

11. The transfer device of claim 10, wherein, The opening pattern of the second mask is a shape having edges of straight line shapes and curved shapes or is a circular shape. 12.The transfer apparatus according to claim 8, wherein: the base layer has a flat plate shape, is formed of a transparent material, and has a light-transmitting property, the light-blocking pattern layer of the first mask includes a material having a light-blocking property in a region of the first mask different from the opening pattern of the first mask, and the light-blocking pattern layer of the second mask includes a material having a light-blocking property in a region of the second mask different from the plurality of opening patterns of the second mask.

13. The transfer device of claim 8, wherein, The first mask and the second mask are each a mask member capable of being rotationally disposed. 14.The transfer apparatus according to claim 8, wherein: the target substrate includes a plurality of unit regions for forming a plurality of display panels, and the plurality of unit regions are circular. 15.The transfer apparatus according to claim 8, wherein: the opening pattern of the first mask has a single row shape, and each of the plurality of opening patterns of the second mask has a size and a shape corresponding to a single chip. 16.A method of transferring light emitting elements, comprising: checking, by a controller, a shape of an opening pattern of a first mask and shapes of a plurality of opening patterns of a second mask in association with finding an opening pattern having a same shape as a shape of a transfer target region of a target substrate; rotating, by the controller, at least one of the first mask and the second mask so that the opening pattern of the first mask overlaps with a widest opening pattern among the plurality of opening patterns of the second mask, wherein the shape of the opening pattern of the first mask is the same as the shape of the transfer target region; and irradiating, by emitting a laser, the overlapping opening pattern of the first mask and the widest opening pattern of the second mask. 17.The method according to claim 16, further comprising moving, by the controller, a mask member including the first mask and the second mask to a next transfer target region.

18. The method of claim 17, wherein, irradiating, by the laser, an opening pattern formed by an overlap between the opening pattern of the first mask and the widest opening pattern of the second mask at an instant when the opening pattern of the first mask and the widest opening pattern of the second mask overlap and are disposed in a straight line. 19.The method according to claim 17, wherein: the opening pattern of the first mask is disposed as a plurality of opening patterns disposed at an angle with respect to a center of the first mask, and the plurality of opening patterns of the second mask are disposed at an angle with respect to a center of the second mask, and the plurality of opening patterns of the first mask and the plurality of opening patterns of the second mask are left-right symmetrical. 20.The method according to claim 17, wherein: respective shapes of the plurality of opening patterns of the second mask are different from each other, and The opening pattern of the second mask is a shape having a straight line shape and a curved shape of an edge or a circular shape. The opening pattern of the second mask is a shape having a straight line shape and a curved shape of an edge or a circular shape.

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