Oxidation and passivation device and method based on low leakage rate of semiconductor device
By using a multi-mode silicon wafer support structure and a support mode switching drive component, the problem of uneven oxide layer thickness during the high-temperature oxidation process of semiconductor devices was solved, achieving low leakage current and high reliability of semiconductor devices.
Patent Information
- Application Number
- CN202511715065.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-21
- Publication Date
- 2026-02-17
AI Technical Summary
In the prior art, during the high-temperature oxidation process of semiconductor devices, the diffusion of reactive gases is hindered due to the line contact or point contact support method between the silicon wafer and the mold, resulting in a shadow effect. This leads to uneven oxide layer thickness, which in turn causes the electric field distribution to concentrate, becoming the main cause of gate-induced leakage and breakdown voltage reduction.
By employing a multi-mode silicon wafer support carrier mechanism and a support mode switching drive component, stable edge clamping is provided during the loading, transport, and initial oxidation stages, which is then converted into bottom support with the minimum contact area during the critical high-temperature oxidation stage. This achieves complete exposure of the silicon wafer surface area and solves the problem of uneven oxidation in stages using different support modes.
It effectively solves the problem of uneven oxide layer thickness, significantly improves the thickness uniformity and interface quality of the gate oxide layer, reduces gate-induced leakage current and breakdown voltage, and achieves low leakage current and high reliability of semiconductor devices.
Smart Images
Figure CN121548337A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor processing technology, and particularly relates to an oxidation passivation device and method based on low leakage current of semiconductor devices. Background Technology
[0002] Low leakage current is one of the core indicators for evaluating the performance, reliability and power consumption of semiconductor devices. Thermal oxidation growth of silicon dioxide layer is the most critical passivation process. The uniformity of film thickness, interface state density and defect control of the film directly determine the leakage characteristics of the final device. However, the current mainstream horizontal oxidation furnace has exposed several inherent and serious technical defects in the pursuit of ultra-fine process with low leakage current. Currently, semiconductor oxidation furnaces generally use static molds such as quartz boats to support silicon wafers. The line contact or point contact support between the silicon wafer and the mold will create a "shadow effect" during the high-temperature oxidation process, which will seriously hinder the diffusion and reaction of reactive gases (such as oxygen and water vapor) in the contact area. This will cause the growth rate of the oxide layer in this area to lag, resulting in uneven oxide film thickness on the surface of the silicon wafer and even the whole. This unevenness will directly cause the electric field distribution to concentrate, becoming the main cause of gate-induced leakage current (GIDL) and breakdown voltage reduction. Summary of the Invention
[0003] This invention addresses the problem that existing line or point contact support methods between silicon wafers and molds create a "shadowing effect" during high-temperature oxidation. This severely hinders the diffusion and reaction of reactive gases (such as oxygen and water vapor) in the contact area, leading to a lag in the oxide layer growth rate in that region. Consequently, this results in uneven oxide film thickness on the silicon wafer surface and even the entire wafer. This unevenness directly causes concentrated electric field distribution, becoming a major contributing factor to gate-induced leakage current (GIDL) and reduced breakdown voltage. The invention proposes the following technical solution: An oxidation passivation apparatus and method based on low leakage current of semiconductor devices, comprising: a process chamber cabinet, a furnace tube assembly installed inside the process chamber cabinet, the furnace tube assembly being used to heat silicon wafers, and a silicon wafer transport structure installed inside the process chamber cabinet and located at the inlet of the furnace tube assembly. The oxidation passivation device based on low leakage current of semiconductor devices also includes a multi-mode silicon wafer support bearing mechanism and a support mode switching drive component. The multi-mode silicon wafer support and bearing mechanism is installed inside the silicon wafer transmission structure; The support mode switching drive component is installed between the silicon wafer transport structure and the multi-mode silicon wafer support carrier mechanism.
[0004] As a preferred embodiment of the above technical solution, the multi-mode silicon wafer support bearing mechanism is provided with silicon wafer positioning V-shaped grooves at equal intervals above it, and the multi-mode silicon wafer support bearing mechanism is provided with symmetrical protrusion avoidance grooves at the positions inside the silicon wafer positioning V-shaped grooves above it, and the multi-mode silicon wafer support bearing mechanism is provided with symmetrical sliding grooves at the positions on both sides of the silicon wafer positioning V-shaped grooves on its inner wall.
[0005] As a preferred embodiment of the above technical solution, the driving component includes a motor fixedly installed at the end of the silicon wafer transmission structure, the output shaft of the motor is connected to a drive shaft, a cam is provided on the outside of the drive shaft, a support plate is attached to the top of the cam, and connecting plates are symmetrically connected to the top of the support plate.
[0006] As a preferred embodiment of the above technical solution, the number of connecting pieces is set to several, and they are set to two groups, with the two groups of connecting pieces connected by a cylinder.
[0007] As a preferred embodiment of the above technical solution, the top of the connecting piece is symmetrically connected with a push bar, a T-shaped column is slidably connected inside the push bar, a counterweight is attached to the outside of the T-shaped column, and a slider is fixedly installed at one end of the counterweight, and the slider is slidably connected inside the groove.
[0008] As a preferred embodiment of the above technical solution, a rectangular plate is fixedly installed at one end of the T-shaped column, and a clamping plate is fixedly installed at one end of the rectangular plate. A positioning groove is provided inside the clamping plate at a position above the protrusion avoidance groove. A silicon nitride ceramic support clamping plate is installed at the top of the support piece inside the positioning groove. The inner wall edge of the silicon nitride ceramic support clamping plate is chamfered.
[0009] As a preferred embodiment of the above technical solution, an inclined groove is provided at the top edge of the push bar, and the distance between the top ends of the two silicon nitride ceramic support clamping plates is greater than the distance between their bottom ends.
[0010] As a preferred embodiment of the above technical solution, the inner wall of the clamping plate is provided with grooves at equal intervals, the counterweight is in the shape of a right trapezoid, and the side of the counterweight near the T-shaped column is an inclined surface.
[0011] A method of using the aforementioned oxidation passivation device based on low leakage current of semiconductor devices includes the following steps: Place the silicon wafer on the multi-mode silicon wafer support mechanism, then activate the support mode switching drive assembly to drive the clamping plates to move towards each other, clamping the edges of the silicon wafer from both sides, and fixing the silicon wafer in the silicon wafer positioning V-groove. Step S2: Furnace loading, heating and edge clamping oxidation from the first step The silicon wafer and the supporting mechanism are fed into the furnace tube assembly through the silicon wafer transfer structure and heated. When the temperature reaches the preset first oxidation temperature, the reaction gas is introduced into the furnace tube and the first stage of oxidation passivation reaction is carried out in the edge clamping mode. Step S3: Switch support mode and bottom support oxidation from step two. Once the initial oxidation step reaches the predetermined time, the support mode switching drive component is activated to execute continuous mechanical linkage actions: a. Drive the clamping plate to move backward, releasing the clamping force on the edge of the silicon wafer; b. Simultaneously drive the silicon nitride ceramic support clamping plate to rise, so that it cuts into the bottom of the silicon wafer and pushes the silicon wafer away from the silicon wafer positioning V-groove, so that the silicon wafer is converted into a bottom point contact support provided by the top of the silicon nitride ceramic support clamping plate; With the bottom point in contact with the support state, the second step of oxidation passivation reaction continues; Step S4: Reset and Unload After the oxidation process is completed, the control support mode switching drive component is reset, the silicon nitride ceramic support clamping plate is driven to descend so that the silicon wafer falls back into the silicon wafer positioning V-groove, and the clamping plate is driven to re-clamp the edge of the silicon wafer. Finally, the silicon wafer is removed from the furnace tube and unloaded.
[0012] The beneficial effects of this invention are as follows: (1) Under the action of the multi-mode silicon wafer support bearing mechanism and the support mode switching drive component 5, the silicon wafer clamping part can be changed, so that the surface area of the silicon wafer is fully exposed to the process atmosphere during the high temperature oxidation stage, which effectively solves the problem of uneven oxide layer thickness caused by gas diffusion obstruction. (2) The device can automatically switch the support mode according to the process stage: it provides stable and reliable edge clamping during loading, transfer and heating stages to prevent silicon wafer displacement; and it switches to bottom support with the smallest contact area during the critical high-temperature oxidation stage, taking into account both the stability and oxidation quality during the process. (3) It facilitates the clamping of silicon wafers, changing the direct insertion method in the prior art. This method reduces wear during the silicon wafer insertion process, thereby protecting the silicon wafer; (4) The multi-mode silicon wafer support carrier mechanism and support mode switching drive component realize the advanced two-step process of "first edge clamping initial oxidation, then bottom support main body oxidation". This solution not only solves the "shadow effect" problem caused by traditional static fixtures, but also significantly improves the thickness uniformity, interface quality and structural integrity of the gate oxide layer while ensuring process stability through phased optimization. These improvements directly translate into a significant reduction in gate induced leakage current (GIDL) and gate leakage current, as well as an increase in breakdown voltage, thereby effectively achieving low leakage rate and high reliability of semiconductor devices. Attached Figure Description
[0013] Figure 1 The diagram shown is a schematic diagram of an oxidation passivation device based on low leakage current of semiconductor devices in Example 1; Figure 2 The diagram shown is a schematic representation of another aspect of the structure of an oxidation passivation device based on low leakage current of semiconductor devices in Example 1. Figure 3 The diagram shown is a schematic of the installation structure of the multi-mode silicon wafer support mechanism in Embodiment 1; Figure 4 The diagram shown is a structural schematic of the support mode switching drive component in Embodiment 1; Figure 5 The diagram shown is a schematic of the installation structure of the counterweight in Embodiment 1; Figure 6 The example shown is from embodiment 1. Figure 5 Schematic diagram of the structure of region A in the middle; Figure 7 The image shown is a physical diagram of an oxidation passivation device based on a semiconductor device with low leakage current in Example 1.
[0014] In the diagram: 1. Process chamber cabinet; 2. Furnace tube assembly; 3. Silicon wafer transfer structure; 4. Multi-mode silicon wafer support mechanism; 41. Silicon wafer positioning V-groove; 42. Protrusion avoidance groove; 43. Slide groove; 5. Support mode switching drive assembly; 51. Motor; 52. Drive shaft; 53. Cam; 54. Support plate; 55. Connecting plate; 56. Cylindrical column; 57. Push bar; 58. T-shaped column; 59. Counterweight; 510. Slider; 511. Rectangular plate; 512. Clamping plate; 513. Positioning groove; 514. Silicon nitride ceramic support clamping plate; 515. Chamfer. Detailed Implementation
[0015] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments.
[0016] Example 1 This invention provides an oxidation passivation device and method for semiconductor devices with low leakage current, such as... Figures 1 to 7As shown, the device includes: a process chamber cabinet 1, a furnace tube assembly 2 installed inside the process chamber cabinet 1 for heating silicon wafers, and a silicon wafer transport structure 3 installed inside the process chamber cabinet 1 and located at the inlet of the furnace tube assembly 2; the oxidation passivation device based on low leakage current of semiconductor devices also includes a multi-mode silicon wafer support carrier mechanism 4 and a support mode switching drive assembly 5; the multi-mode silicon wafer support carrier mechanism 4 is installed inside the silicon wafer transport structure 3; the support mode switching drive assembly 5 is installed between the silicon wafer transport structure 3 and the multi-mode silicon wafer support carrier mechanism 4.
[0017] Semiconductor oxidation furnaces commonly use static molds such as quartz boats to support silicon wafers. The line or point contact support between the silicon wafer and the mold will create a "shadow effect" during the high-temperature oxidation process, which will seriously hinder the diffusion and reaction of reactive gases such as oxygen and water vapor in the contact area. This will cause the growth rate of the oxide layer in this area to lag, resulting in uneven oxide film thickness on the surface of the silicon wafer and even the whole. This unevenness will directly cause the electric field distribution to concentrate, becoming the main cause of gate-induced leakage current (GIDL) and breakdown voltage reduction. In this application, the multi-mode silicon wafer support bearing mechanism 4 and the support mode switching drive component 5 are used to change the silicon wafer clamping position, so that the surface area of the silicon wafer is fully exposed to the process atmosphere during the high-temperature oxidation stage, which effectively solves the problem of uneven oxide layer thickness caused by gas diffusion obstruction. The device can automatically switch support modes according to the process stage: it provides stable and reliable edge clamping during loading, transfer and initial oxidation stages to prevent silicon wafer displacement; and it switches to bottom support with minimal contact area during the critical high-temperature oxidation stage of the main body, taking into account both the stability of the process and the oxidation quality. This invention employs a two-step approach: first, edge clamping oxidation is performed for a period of time, then the support mode is switched to perform bottom support oxidation. This approach can not only be perfectly executed by the device, but is also a more intelligent and advanced process. It cleverly utilizes the characteristics of different support modes to solve the two key problems of "initial stability and interface protection" and "body oxidation uniformity" in stages, and is expected to obtain semiconductor oxide layers with better electrical performance and higher reliability.
[0018] In use, the silicon wafer is placed into the multi-mode silicon wafer support carrier mechanism 4. At this time, the silicon wafer is clamped by the support mode switching drive component 5, and then the silicon wafer transfer structure 3 is activated. The silicon wafer transfer structure 3 drives the furnace tube assembly 2 into the process chamber cabinet 1, and then an oxidation reaction is carried out. After the oxidation reaction has been carried out for a period of time, the support mode switching drive component 5 is activated again. The support mode switching drive component 5 changes the clamping position of the silicon wafer, and then the oxidation reaction continues.
[0019] Specifically, three furnace tube assemblies 2 are vertically installed inside the process chamber cabinet 1. A silicon wafer transport structure 3 is installed at one end of the three furnace tube assemblies 2 inside the process chamber cabinet 1. A multi-mode silicon wafer support and carrier mechanism 4 is installed inside the silicon wafer transport structure 3. A support mode switching drive assembly 5 is installed between the multi-mode silicon wafer support and carrier mechanism 4 and the silicon wafer transport structure 3. A silicon wafer positioning V-shaped groove 41 is equidistantly opened above the multi-mode silicon wafer support and carrier mechanism 4. A protrusion avoidance groove 42 is symmetrically opened above the multi-mode silicon wafer support and carrier mechanism 4 inside the silicon wafer positioning V-shaped groove 41. A sliding groove 43 is symmetrically opened on both sides of the silicon wafer positioning V-shaped groove 41 on the inner wall of the multi-mode silicon wafer support and carrier mechanism 4. The sliding groove 43 is T-shaped.
[0020] To achieve the adjustment of silicon wafer clamping in the above embodiments, the following solution is provided, such as... Figure 3 As for Figure 6 As shown, the drive assembly 5 includes a motor 51 fixedly mounted at the end of the silicon wafer transmission structure 3. The output shaft of the motor 51 is connected to a drive shaft 52. A cam 53 is provided on the outer side of the drive shaft 52. A support plate 54 is attached to the top of the cam 53. Connecting plates 55 are symmetrically connected to the top of the support plate 54. The number of connecting plates 55 is set to several, and they are set to two groups. The two groups of connecting plates 55 are connected by a cylinder 56. A push bar 57 is symmetrically connected to the top of the connecting plate 55. A T-shaped column 58 is slidably connected inside the push bar 57. A counterweight 59 is attached to the outer side of the T-shaped column 58. A slider 510 is fixedly mounted on one end of the counterweight 59, and the slider 510 is slidably connected inside the groove 43. A rectangular plate 511 is fixedly installed at one end of the T-shaped column 58, and a clamping plate 512 is fixedly installed at the other end of the rectangular plate 511. A positioning groove 513 is provided inside the clamping plate 512 above the protrusion avoidance groove 42. A silicon nitride ceramic support clamping plate 514 is installed at the top of the support plate 54 inside the positioning groove 513. A chamfer 515 is provided on the inner wall edge of the silicon nitride ceramic support clamping plate 514. An inclined groove is provided on the top edge of the push bar 57. The distance between the tops of the two silicon nitride ceramic support clamping plates 514 is greater than the distance between the bottoms. The inner wall of the clamping plate 512 is provided with grooves at equal intervals. The counterweight 59 is in the shape of a right trapezoid, and the side of the counterweight 59 near the T-shaped column 58 is an inclined surface.
[0021] In use, the motor 51 is started, and its output shaft drives the drive shaft 52 and the cam 53 fixed on it to rotate. The rotational motion of the cam 53 is converted into the vertical upward motion of the support plate 54. The support plate 54 drives the connecting plate 55 and the push bar 57 fixed to it to rise synchronously. After the push bar 57 rises to the point that its inclined surface contacts the T-shaped column 58, it continues to rise. Through the inclined surface engagement, it drives the T-shaped column 58 to move horizontally inward. The T-shaped column 58 drives the clamping plate 512 to slide and retract inward within the multi-mode silicon wafer support bearing mechanism 4 through the rectangular plate 511, releasing the clamping of the silicon wafer edge. At the same time, The T-shaped column 58 presses against the inclined surface of the counterweight 59, driving the counterweight 59 to move the slider 510 up along the slide groove 43, making room for subsequent actions. In the initial stage of the connecting piece 55 rising, the silicon nitride ceramic support clamping plate 514 at its top moves upward along the positioning groove 513. Under the guidance of the chamfer 515, the two sets of silicon nitride ceramic support clamping plates 514 cut into the silicon wafer from the outside and below, and move to the bottom area of the silicon wafer. At this time, the clamping plate 512 has completely released the clamping of the silicon wafer, and the responsibility for supporting and positioning the silicon wafer is transferred from the clamping plate 512 to the silicon nitride ceramic support clamping plate 514. The motor 51 continues to run, driving the silicon nitride ceramic support clamping plate 514 to rise continuously. After being lifted, its bottom is only supported by the tiny plane at the top of the silicon nitride ceramic support clamping plate 514. Most of its surface (including the area originally covered by the clamping plate 512) is completely suspended and exposed to the process atmosphere, thus entering the ideal "bottom point contact suspension" oxidation state.
[0022] Specifically, the motor 51 is fixedly mounted on the end of the silicon wafer transmission structure 3 via a bracket. The output shaft of the motor 51 is connected to the drive shaft 52 via a coupling and is directly driven to rotate by the motor 51. A cam 53 is fixedly fitted on the outer side of the drive shaft 52 and rotates together with the drive shaft 52. A support plate 54 is provided above the cam 53, and its bottom surface is in contact with the contour surface of the cam 53, converting the rotational motion of the cam 53 into its own vertical reciprocating motion. Connecting plates 55 are symmetrically fixedly mounted on the top of the support plate 54. The connecting plates 55 are designed with... The wafer is divided into several pieces and arranged in two groups. The two groups of connecting pieces 55 are laterally connected by a cylinder 56 to enhance the rigidity and synchronization of the overall structure. The top of the connecting pieces 55 is symmetrically and fixedly connected with push bars 57. The push bars 57 are vertically slidably connected to the inside of the multi-mode silicon wafer support mechanism 4. The top edge of the push bar 57 has an inclined groove. The end face of the push bar 57 has a vertical surface, an inclined surface, and a vertical surface. The inside of the push bar 57 has a U-shaped groove. A T-shaped column 5 is slidably connected inside the flow groove of the push bar 57. 8. A rectangular plate 511 is fixedly installed at one end of the T-shaped column 58, and a clamping plate 512 is fixedly installed at the other end of the rectangular plate 511. The clamping plate 512 is horizontally slidably connected to the inside of the silicon wafer positioning V-groove 41 of the multi-mode silicon wafer support bearing mechanism 4. The inner wall of the clamping plate 512 is provided with grooves at equal intervals to reduce weight and avoid interference. A counterweight 59 is attached to the end face of the T-shaped column 58 away from the rectangular plate 511. The counterweight 59 is shaped as a right trapezoid, and its inclined surface is attached to the outer side of the T-shaped column 58. One end of the counterweight 59 is fixed. A slider 510 is installed, which is slidably connected to the groove 43 inside the inner wall of the multi-mode silicon wafer support bearing mechanism 4. A silicon nitride ceramic support clamping plate 514 is fixedly installed on the top of the support plate 54 and passes through the positioning groove 513 inside the clamping plate 512. The inner walls of the two silicon nitride ceramic support clamping plates 514 are chamfered 515. The distance between the top ends of the two silicon nitride ceramic support clamping plates 514 is greater than the distance between their bottom ends, forming a configuration that is wider at the top and narrower at the bottom, which is used to guide and accommodate the silicon wafer during the rising process.
[0023] A method of using the aforementioned oxidation passivation device based on low leakage current of semiconductor devices includes the following steps: Step S1: Loading and initial edge clamping The silicon wafer is placed on the multi-mode silicon wafer support carrier 4, and then the support mode switching drive component 5 is activated to drive the clamping plates 512 to move towards each other, clamping the edges of the silicon wafer from both sides, so that the silicon wafer is fixed in the silicon wafer positioning V-groove 41. Step S2: Furnace loading, heating and edge clamping oxidation from the first step The silicon wafer and the carrier mechanism are fed into the furnace tube assembly 2 through the silicon wafer transfer structure 3 and heated. When the temperature reaches the preset first oxidation temperature, the reaction gas is introduced into the furnace tube and the first stage of oxidation passivation reaction is carried out in the edge clamping mode. Step S3: Switch support mode and bottom support oxidation from step two. Once the first oxidation step reaches the predetermined time, the support mode switching drive component 5 is activated to execute continuous mechanical linkage actions: a. Drive the clamping plate 512 to move in the opposite direction, releasing the clamp on the edge of the silicon wafer; b. Simultaneously drive the silicon nitride ceramic support clamping plate 514 to rise, so that it cuts into the bottom of the silicon wafer and pushes the silicon wafer away from the silicon wafer positioning V-groove 41, so that the silicon wafer is converted into a bottom point contact support provided by the top of the silicon nitride ceramic support clamping plate 514; With the bottom point in contact with the support state, the second step of oxidation passivation reaction continues; Step S4: Reset and Unload After the oxidation process is completed, the control support mode switching drive component 5 is reset, driving the silicon nitride ceramic support clamping plate 514 to descend so that the silicon wafer falls back into the silicon wafer positioning V-groove 41, and driving the clamping plate 512 to re-clamp the edge of the silicon wafer, and finally removing the silicon wafer from the furnace tube and unloading it.
[0024] Working principle: The device is in the reset state, the clamping plate 512 is in the relaxed position, and the silicon nitride ceramic support clamping plate 514 is in the descending position. The operator or automated robot accurately places the silicon wafers one by one into the silicon wafer positioning V-groove 41 of the multi-mode silicon wafer support bearing mechanism 4. The motor 51 is started, and its output shaft drives the drive shaft 52 and the cam 53 fixed on it to start rotating. The cam 53 pushes the support plate 54 to descend vertically. The support plate 54 drives the connecting plate 55 and the push bar 57 to descend synchronously. At this time, the counterweight 59 drives the slider 510 to move vertically along the inside of the slide groove 43 through gravity, and its inclined surface contacts the outside of the T-shaped column 58. Through the action of the inclined surface, the T-shaped column 58 is guided forward, driving the rectangular plate 511 and the clamping plate 512 to slide horizontally inward and move towards each other in the bearing mechanism. Finally, the clamping plates 512 on both sides clamp the edge of the silicon wafer from the horizontal direction, completing the precise positioning and stable clamping. At this time, the device enters the "edge clamping mode". Next, the silicon wafer transport structure 3 is activated, and the entire multi-mode silicon wafer support and carrier mechanism 4, which has reliably clamped the silicon wafer, is uniformly fed into the preset process chamber in the furnace tube assembly 2. The furnace door is closed, the process chamber is sealed, and the temperature is raised by program control. When the furnace reaches the first oxidation temperature, the reaction (oxygen) gas is introduced, and the first stage of oxidation is carried out in the edge clamping mode. This stage aims to utilize the stability of edge clamping to simultaneously form a dense initial oxide layer in the "shadow area" where the silicon wafer is clamped, pre-passivate the area, and lay the foundation for subsequent processes. After the first oxidation step forms an initial oxide layer of sufficient quality, the control system sends another command to the motor 51 to continue rotating in the original direction. The motor 51 drives the drive shaft 52 and the cam 53 to rotate, pushing the support plate 54 to rise vertically. The support plate 54 drives the connecting plate 55 and the push bar 57 to rise synchronously. As the push bar 57 rises, its inclined surface continues to act on the T-shaped column 58, driving the T-shaped column 58 and the clamping plate 512 connected to it to slide horizontally outward to the limit position, thereby completely releasing the clamping and blocking of the edge of the silicon wafer. Throughout the entire process of the connecting piece 55 rising, the silicon nitride ceramic support clamping plate 514, fixed to the top of the support piece 54, rises synchronously along the inside of the protrusion avoidance groove 42 and the positioning groove 513. Guided precisely by the chamfered corner 515 of its inner wall, the two sets of silicon nitride ceramic support clamping plates 514 smoothly cut into the silicon wafer from the outside and below, and accurately move to the predetermined lifting position at the bottom of the silicon wafer. After the clamping plate 512 is fully retracted, the motor 51 continues to run, driving the silicon nitride ceramic support clamping plate 514 vertically upward, smoothly pushing the silicon wafer away from its original silicon wafer positioning V-groove 41 support surface. After the silicon wafer is lifted, its bottom is only supported by the tiny, smooth surface at the top of the silicon nitride ceramic support clamping plate 514. The device successfully switches to the "bottom point contact suspension mode" for the second oxidation step. In this stage, most of the silicon wafer surface is exposed to the process atmosphere without obstruction, achieving uniform growth of the main body of the oxide layer. After the preset oxidation time is completed, the reaction gas is stopped, and the control system commands the motor 51 to rotate in the opposite direction. First, the silicon nitride ceramic support clamping plate 514 descends smoothly, gently placing the oxidized silicon wafer back into the silicon wafer positioning V-groove 41. Then, the push bar 57 descends, and the T-shaped column 58 resets inward under the gravity of the counterweight 59 and the action of the inclined surface, causing the clamping plate 512 to close again and clamp the edge of the silicon wafer, so that the device returns to the "edge clamping mode" to ensure the safety of the silicon wafer in subsequent transportation. Then, the furnace tube begins to cool down. After the temperature drops to a safe range, the silicon wafer transportation structure 3 is activated to remove the bearing mechanism and the silicon wafer on it from the furnace tube and return to the loading / unloading position. Finally, the control clamping plate 512 is released, and the operator or robot can take out the silicon wafer that has completed high-quality oxidation and passivation treatment.
[0025] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it.
Claims
1. A semiconductor device low leakage current based oxide passivation apparatus and method thereof, characterized by, It includes: The process chamber cabinet (1), the furnace tube assembly (2) installed in the process chamber cabinet (1), the furnace tube assembly (2) is used for heating silicon wafer, and the silicon wafer transmission structure (3) installed in the process chamber cabinet (1) and located at the inlet of the furnace tube assembly (2); the oxidation passivation device based on the low leakage rate of semiconductor devices also includes a multi-mode silicon wafer support bearing mechanism (4) and a support mode switching drive assembly (5); the multi-mode silicon wafer support bearing mechanism (4) is installed inside the silicon wafer transmission structure (3); The support mode switching drive assembly (5) is installed between the silicon wafer transmission structure (3) and the multi-mode silicon wafer support bearing mechanism (4).
2. The low leakage current passivation device based on a semiconductor device according to claim 1, wherein The silicon wafer positioning V-shaped groove (41) is equidistantly arranged above the multi-mode silicon wafer support bearing mechanism (4), the convex point avoiding groove (42) is symmetrically arranged above the multi-mode silicon wafer support bearing mechanism (4) at the position inside the silicon wafer positioning V-shaped groove (41), and the sliding groove (43) is symmetrically arranged on the inner wall of the multi-mode silicon wafer support bearing mechanism (4) at the positions on both sides of the silicon wafer positioning V-shaped groove (41).
3. The low leakage current passivation device based on a semiconductor device according to claim 2, wherein The drive assembly (5) includes a motor (51) fixedly installed at the end of the silicon wafer transmission structure (3), the output shaft of the motor (51) is connected with a drive shaft (52), the outer side of the drive shaft (52) is provided with a cam (53), the top end of the cam (53) is connected with a support piece (54), and the top end of the support piece (54) is symmetrically connected with a connecting piece (55).
4. The low leakage current passivation device based on a semiconductor device according to claim 3, wherein The number of the connecting piece (55) is set to be several, and is set to be two groups, and the two groups of connecting pieces (55) are connected through a cylinder (56).
5. The low leakage current passivation device based on a semiconductor device according to claim 4, wherein The top end of the connecting piece (55) is symmetrically connected with a pushing bar (57), the inside of the pushing bar (57) is slidably connected with a T-shaped column (58), the outside of the T-shaped column (58) is connected with a counterweight block (59), one end of the counterweight block (59) is fixedly installed with a sliding block (510), and the sliding block (510) is slidably connected in the inside of the sliding groove (43).
6. The low leakage current passivation device based on a semiconductor device according to claim 5, wherein One end of the T-shaped column (58) is fixedly installed with a rectangular plate (511), one end of the rectangular plate (511) is fixedly installed with a clamping plate (512), the inside of the clamping plate (512) is provided with a positioning groove (513) at the position above the convex point avoiding groove (42), the top end of the support piece (54) is installed with a silicon nitride ceramic support clamping plate (514) at the position in the inside of the positioning groove (513), and the inner wall of the silicon nitride ceramic support clamping plate (514) is provided with a chamfer (515).
7. The low leakage current passivation device based on a semiconductor device according to claim 6, wherein The top end of the pushing bar (57) is provided with an inclined groove, and the distance between the top ends of the two silicon nitride ceramic support clamping plates (514) is greater than the distance between the bottom ends.
8. The low leakage current passivation device based on a semiconductor device according to claim 7, wherein The inner wall of the clamping plate (512) is equidistantly provided with a groove, the shape of the counterweight block (59) is a right trapezoid, and the side close to the T-shaped column (58) of the counterweight block (59) is an inclined surface.
9. A method of using the semiconductor device-based low-leakage- current oxidation passivation apparatus according to claim 8, characterized by, It includes the following steps: Step S1, loading and edge clamping: Put the silicon wafer on the multi-mode silicon wafer support and bearing mechanism (4), and then start the support mode switching drive assembly (5) to drive the clamping plates (512) to move towards each other to clamp the edges of the silicon wafer from both sides, so that the silicon wafer is fixed in the silicon wafer positioning V-shaped groove (41); Step S2, furnace entry, temperature rise and first step edge clamping oxidation: Through the silicon wafer transmission structure (3), the clamped and fixed silicon wafer and the bearing mechanism are sent into the furnace tube assembly (2) for temperature rise, and when the temperature reaches the preset first step oxidation temperature, the reaction gas is introduced into the furnace tube, and the first stage of oxidation passivation reaction is carried out in the edge clamping mode; Step S3, switching the support mode and the second step bottom support oxidation: After the first step oxidation reaches the predetermined time, the support mode switching drive assembly (5) is started to perform continuous mechanical linkage actions: a. Drive the clamping plates (512) to move away from the silicon wafer to release the clamping of the edges of the silicon wafer; b. At the same time, drive the silicon nitride ceramic support clamping plate (514) to rise, so that it cuts into the bottom of the silicon wafer and lifts the silicon wafer away from the silicon wafer positioning V-shaped groove (41), so that the silicon wafer is converted to bottom point contact support provided by the top end of the silicon nitride ceramic support clamping plate (514); In this bottom point contact support state, the second step oxidation passivation reaction is continued; Step S4, reset and unload: After the oxidation process is completed, the support mode switching drive assembly (5) is controlled to reset, the silicon nitride ceramic support clamping plate (514) is driven to descend so that the silicon wafer falls back to the silicon wafer positioning V-shaped groove (41), and the clamping plates (512) are driven to clamp the edges of the silicon wafer again, and finally the silicon wafer is moved out of the furnace tube and unloaded.