Magnetron sputtering coating equipment for deep hole structure

Abstract

The invention relates to the technical field of magnetron sputtering coating, and particularly provides magnetron sputtering coating equipment for a deep hole structure. The horizontal driving assembly is used for driving the carrier plate to move horizontally; the rotating cathode is installed in the sputtering chamber and located above the carrier plate and comprises a first magnetic pole and two second magnetic poles, the length of the first magnetic pole and the length of the second magnetic poles are both larger than the length of the edge, perpendicular to the horizontal moving direction of the carrier plate, of the carrier plate, and the first magnetic pole is downwards arranged between the two second magnetic poles; the distance between the first magnetic pole and the second magnetic pole is smaller than or equal to 3 cm, and the included angle between two sputtering tracks formed by the first magnetic pole and the second magnetic pole is smaller than 30 degrees. The particle distribution optimizer is mounted in the sputtering chamber, is positioned between the rotating cathode and the support plate, covers an effective sputtering area of the rotating cathode and is used for reducing a sputtering angle of sputtering particles sputtered by the rotating cathode; the filling capability of the deep hole structure and the film thickness uniformity of the deep hole structure can be effectively improved.

Description

Technical Field

[0001] This application relates to the field of magnetron sputtering coating technology, and more specifically, to a magnetron sputtering coating apparatus for deep hole structures. Background Technology

[0002] Currently, in the field of advanced packaging, TSV (Through Silicon Via) technology typically uses semiconductor wafer equipment to coat deep hole structures on silicon wafers. As the importance of board-level advanced packaging increases and the industry's technical requirements for high aspect ratio through-hole structure filling become more stringent, board-level coating equipment is gradually demanding an aspect ratio of 15:1 to 20:1 for deep holes.

[0003] Existing large-area flat panel coating equipment typically uses densely arranged magnetic poles to achieve uniform coating on large-area substrates. In this layout, the film thickness distribution below the magnetic poles exhibits a Gaussian distribution. To compensate for the insufficient film thickness at the bottom of the Gaussian distribution valley, existing technologies rely on the deposition of sputtered particles at large sputtering angles to increase the film thickness below the middle position of adjacent magnetic poles (the bottom of the Gaussian distribution valley). However, because the sputtered particles with large sputtering angles reach the surface of the deep hole structure at excessively large angles, these sputtered particles collide with the sidewalls of the upper part of the deep hole structure and deposit in the upper part of the deep hole structure. As a result, the sputtered particles cannot penetrate into the lower region of the deep hole structure, leading to thinner or even missing metal deposition in the lower region of the deep hole structure. Therefore, the existing technology has the problems of poor deep hole filling ability and insufficient uniformity of deep hole film thickness. This results in a limited aspect ratio of the through-hole structure that the existing technology can fill (for example, the aspect ratio that can be achieved in a 50µm through-hole structure is less than 5:1), which in turn makes the existing technology unable to meet the aspect ratio requirements of plate-level coating equipment for deep holes.

[0004] There is currently no effective technical solution to the above problems. Summary of the Invention

[0005] The purpose of this application is to provide a magnetron sputtering coating apparatus for deep hole structures, which can effectively improve the filling capacity and film thickness uniformity of deep hole structures.

[0006] This application provides a magnetron sputtering coating apparatus for deep hole structures, used to coat deep hole structures on a carrier plate, comprising: Sputtering chamber; A horizontal drive assembly, installed inside the sputtering chamber, is used to drive the carrier plate to move horizontally. A rotating cathode is installed in the sputtering chamber and above the carrier plate. It includes a first magnetic pole and two second magnetic poles. The lengths of the first and second magnetic poles are both greater than the length of the side of the carrier plate perpendicular to its horizontal movement direction. The first magnetic pole is positioned downward between the two second magnetic poles. The distance between the first and second magnetic poles is less than or equal to 3 cm. The included angle between the two sputtering tracks formed by the first and second magnetic poles is less than 30°. The particle distribution optimizer, installed inside the sputtering chamber and located between the rotating cathode and the carrier plate, covers the effective sputtering area of ​​the rotating cathode and is used to reduce the sputtering angle of the sputtered particles sputtered from the rotating cathode.

[0007] This application provides a magnetron sputtering coating apparatus for deep hole structures. By setting the first magnetic pole downwards, having two second magnetic poles share a single first magnetic pole, and ensuring the distance between the first and second magnetic poles is less than 3 cm, the included angle between the two sputtering tracks formed by the first and second magnetic poles is less than 30°. This effectively reduces the initial sputtering angle of the sputtered particles. A particle distribution optimizer positioned between the rotating cathode and the carrier plate further optimizes the sputtering angle, further reducing it. This dual optimization mechanism ensures that sputtered particles can enter the deep hole structure at a smaller angle. Therefore, this application effectively reduces the collision and deposition of sputtered particles on the upper sidewall of the deep hole, allowing the sputtered particles to penetrate deep into the lower region of the deep hole structure. This effectively improves the filling capacity and film thickness uniformity of the deep hole structure. In other words, this application effectively broadens the aspect ratio range of through-hole structures that the magnetron sputtering coating apparatus for deep hole structures can fill, thereby effectively meeting the aspect ratio requirements of plate-level coating equipment for deep holes.

[0008] Optionally, the particle distribution optimizer includes an optimizer body and an electric field generating component. The optimizer body is mounted on the sputtering chamber and has multiple through holes through which sputtered particles sputtered from the rotating cathode can pass. The electric field generating component is mounted on the sputtering chamber and connected to the optimizer body. The electric field generating component generates an electric field on the optimizer body by applying a positive voltage to the optimizer body to reduce the sputtering angle of sputtered particles passing through the through holes.

[0009] Optionally, the optimizer body includes multiple parallel first grid bars and multiple parallel second grid bars. The first grid bars intersect with the second grid bars, and the through holes are formed by the first grid bars and the second grid bars. The angle between the length direction of the first grid bar and the horizontal movement direction of the carrier plate and the angle between the length direction of the second grid bar and the horizontal movement direction of the carrier plate are both greater than 0° and less than 90°.

[0010] Since the angles between the length direction of the first grid bar and the horizontal movement direction of the carrier plate, and the angles between the length direction of the second grid bar and the horizontal movement direction of the carrier plate, are both set to be greater than 0° and less than 90°, that is, neither the first nor the second grid bar is parallel to the horizontal movement direction of the carrier plate, no point on the carrier plate will be continuously blocked by the same grid bar for a long time. Therefore, this technical solution can effectively avoid the grid bar forming a blocking effect on the surface of the carrier plate, so that the film thickness of the carrier plate surface located below the grid bar that is parallel to the horizontal movement direction of the carrier plate is as close as possible to the film thickness of the carrier plate surface that is not blocked by the grid bar, thereby effectively improving the film thickness uniformity of the carrier plate surface and thus effectively improving the coating quality.

[0011] Optionally, the angle between the length direction of the first grid bar and the horizontal movement direction of the carrier plate is 45°, and the first grid bar is perpendicular to the second grid bar.

[0012] Since both the first and second grid bars are not parallel to the direction of movement of the carrier plate, and both the first and second grid bars are symmetrically distributed at a 45° angle, the shading time of any grid bar on a specific area of ​​the carrier plate surface is minimized during the entire process of carrier plate movement, and the shading effect can be uniformly distributed across the entire carrier plate surface. Therefore, this technical solution can make the deposition of sputtered particles on the carrier plate surface more uniform, thereby further improving the uniformity of film thickness on the carrier plate surface.

[0013] Optionally, the optimizer body is hinged to the sputtering chamber. The magnetron sputtering coating apparatus for deep hole structures also includes a swing drive assembly, which is mounted on the sputtering chamber and connected to the optimizer body. The swing drive assembly is used to drive the optimizer body to swing in a direction perpendicular to the horizontal movement direction of the carrier plate.

[0014] Optionally, when the rotating cathode drives the first and second magnetic poles to swing, the angle between the second magnetic pole and the vertical direction is 0-30°, and the swing range of the optimizer body is -10 to 10 mm.

[0015] Optionally, the forward voltage value is 0-100V.

[0016] Optionally, the length of the optimizer body is 30-60 mm longer than the length of the effective sputtering area of ​​the rotating cathode, and the ratio of the width of the optimizer body to the width of the effective sputtering area of ​​the rotating cathode is 1.5-3.

[0017] Optionally, the power density applied to the target by the rotating cathode is 20-40 kW / m.

[0018] Optionally, the uniformity of the magnetic field strength within the effective sputtering region of the rotating cathode is less than or equal to 3%.

[0019] As can be seen from the above, the magnetron sputtering coating equipment for deep hole structures provided in this application effectively reduces the initial sputtering angle of sputtered particles by setting the first magnetic pole downward, having two second magnetic poles share a first magnetic pole, and having the distance between the first and second magnetic poles less than 3 cm, thereby reducing the included angle between the two sputtering tracks formed by the first and second magnetic poles to less than 30°. Furthermore, a particle distribution optimizer set between the rotating cathode and the carrier plate performs secondary optimization on the sputtering angle of the sputtered particles to further reduce the sputtering angle. This dual optimization mechanism ensures that sputtered particles can enter the deep hole structure at a smaller angle. Therefore, this application can effectively reduce the collision and deposition of sputtered particles on the upper sidewall of the deep hole, allowing the sputtered particles to penetrate into the lower region of the deep hole structure, thereby effectively improving the filling capacity and film thickness uniformity of the deep hole structure. In other words, this application can effectively broaden the aspect ratio range of the through-hole structure that the magnetron sputtering coating equipment for deep hole structures can fill, thus effectively meeting the aspect ratio requirements of plate-level coating equipment for deep holes. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of a magnetron sputtering coating apparatus for deep hole structures, provided as an embodiment of this application.

[0021] Figure 2 This is a top view of the rotating cathode and carrier plate provided in an embodiment of this application.

[0022] Figure 3 This is a schematic diagram comparing the existing optimizer body with the optimizer body provided in the embodiments of this application.

[0023] Reference numerals: 1. Carrier plate; 2. Sputtering chamber; 3. Horizontal drive assembly; 4. Rotating cathode; 41. First magnetic pole; 42. Second magnetic pole; 5. Particle distribution optimizer; 51. Optimizer body; 511. First grid bar; 512. Second grid bar; 52. Electric field generating assembly. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0025] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0026] like Figures 1-3 As shown, this application provides a magnetron sputtering coating apparatus for deep hole structures, used to coat deep hole structures on a carrier plate 1, comprising: Sputtering chamber 2; The horizontal drive assembly 3 is installed inside the sputtering chamber 2 and is used to drive the carrier plate 1 to move horizontally. The rotating cathode 4 is installed in the sputtering chamber 2 and located above the carrier plate 1. It includes a first magnetic pole 41 and two second magnetic poles 42. The lengths of the first magnetic pole 41 and the second magnetic pole 42 are both greater than the length of the side of the carrier plate 1 that is perpendicular to its horizontal movement direction. The first magnetic pole 41 is positioned downward between the two second magnetic poles 42. The distance between the first magnetic pole 41 and the second magnetic pole 42 is less than 3 cm. The included angle between the two sputtering tracks formed by the first magnetic pole 41 and the second magnetic pole 42 is less than 30°. The particle distribution optimizer 5 is installed in the sputtering chamber 2 and located between the rotating cathode 4 and the carrier plate 1. It covers the effective sputtering area of ​​the rotating cathode 4 and is used to reduce the sputtering angle of the sputtered particles sputtered from the rotating cathode 4.

[0027] This application effectively reduces the sputtering angle of sputtered particles by optimizing the magnetic pole layout of the rotating cathode 4, thereby improving the ability of sputtered particles to enter the deep hole structure, and thus improving the filling effect and film thickness uniformity of the deep hole structure, so as to meet the stringent requirements of plate-level coating equipment for the aspect ratio of deep holes.

[0028] The sputtering chamber 2 in this embodiment is a core component of the magnetron sputtering coating equipment for deep-hole structures. The sputtering chamber 2 is typically maintained in a vacuum or low-pressure state to provide a controlled environment for the sputtering process. The rotating cathode 4 in this embodiment is installed inside the sputtering chamber 2 and above the carrier plate 1. The rotating cathode 4 is preferably rod-shaped and is the main source of sputtered particles. The rotating cathode 4 includes a target material, a first magnetic pole 41 (preferably an S pole), and two second magnetic poles 42 (preferably N poles). The magnetic field strength of the first magnetic pole 41 and the second magnetic pole 42 is preferably 500-1200 Gauss. The rotating cathode 4 uses the magnetic field formed by the first magnetic pole 41 and the second magnetic pole 42 to guide plasma to bombard the target surface, causing sputtering of the target surface material and thus obtaining sputtered particles. This embodiment achieves this by having the two second magnetic poles 42 share a first magnetic pole 41 and by keeping the distance between the first magnetic pole 41 and the second magnetic pole 42 less than 3 cm (compared to a distance greater than 3 cm in conventional rotating cathodes). The angle between the two sputtering tracks formed by the first magnetic pole 41 and the second magnetic pole 42 is less than 30° (the angle between the two sputtering tracks of the existing rotating cathode is 30-60°). Compared with the two magnetron tracks formed by the two N poles and two S poles in the prior art, this embodiment can effectively reduce the angle between the two sputtering tracks, so that the magnetic field lines are concentrated on the target surface. The concentrated magnetic field lines can effectively suppress the lateral diffusion of sputtered particles. Therefore, this embodiment can reduce the sputtering angle of sputtered particles by reducing the distance between the first magnetic pole 41 and the second magnetic pole 42 and reducing the angle between the two sputtering tracks. This embodiment maximizes the verticality of sputtered particles by setting the first magnetic pole 41 downward, so as to minimize the sputtering angle of sputtered particles sputtered by the rotating cathode 4. In this embodiment, the horizontal drive assembly 3 is installed inside the sputtering chamber 2. This assembly is used to precisely control the horizontal movement of the carrier plate 1 within the sputtering chamber 2. Since the lengths of the first magnetic pole 41 and the second magnetic pole 42 are both greater than the length of the side of the carrier plate 1 perpendicular to its horizontal movement direction, this embodiment only needs to drive the carrier plate 1 horizontally using the horizontal drive assembly 3 to perform sputtering coating on various areas of the carrier plate 1. Specifically, the horizontal drive assembly 3 can employ a roller system driven by a stepper motor or servo motor, using the friction between the rollers and the carrier plate 1 to move the carrier plate 1 horizontally. In this embodiment, the particle distribution optimizer 5 is installed inside the sputtering chamber 2 and located between the rotating cathode 4 and the carrier plate 1. The particle distribution optimizer 5 covers the effective sputtering area of ​​the rotating cathode 4. It reduces the sputtering angle of the sputtered particles sputtered from the rotating cathode 4 by forming an electric or magnetic field between the effective sputtering area of ​​the rotating cathode 4 and the carrier plate 1, and by using this electric or magnetic field to deflect the trajectory of the sputtered particles downwards.

[0029] The magnetron sputtering coating equipment for deep-hole structures disclosed in this application effectively reduces the sputtering angle of sputtered particles through the synergistic effect of the rotating cathode 4 and the particle distribution optimizer 5, enabling more sputtered particles to reach the lower region of the deep-hole structure. This effectively improves the poor deep-hole filling capacity and insufficient uniformity of the deep-hole film thickness, thus effectively solving the problems of poor deep-hole filling capacity and insufficient film thickness uniformity in the prior art. Specifically, the horizontal drive assembly 3 first precisely delivers the carrier plate 1 into the sputtering region within the sputtering chamber 2. Subsequently, after the rotating cathode 4 is energized, the target material on its surface is bombarded by plasma, thereby sputtering a large number of sputtered particles. The first magnetic pole 41 inside the rotating cathode 4 is disposed downward between the two second magnetic poles 42. At the same time, by making the two second magnetic poles 42 share a first magnetic pole 41 and by making the distance between the first magnetic pole 41 and the second magnetic pole 42 less than 3 cm, the included angle between the two sputtering tracks formed by the first magnetic pole 41 and the second magnetic pole 42 is less than 30°. Through the combined effect of these designs, this application can effectively reduce the initial sputtering angle of the sputtered particles sputtered from the rotating cathode 4 when they leave the target surface. That is, this application can effectively reduce the sputtering angle of the sputtered particles sputtered from the rotating cathode 4. Based on this, as the sputtered particles fly toward the carrier plate 1, they pass through the particle distribution optimizer 5 installed in the sputtering chamber 2 and located between the rotating cathode 4 and the carrier plate 1. The particle distribution optimizer 5 covers the effective sputtering area of ​​the rotating cathode 4. The particle distribution optimizer 5 can further reduce the sputtering angle of the sputtered particles so that more sputtered particles can enter the deep hole structure on the carrier plate 1 at a near-vertical angle, thereby allowing more sputtered particles to reach the lower region of the deep hole structure. Therefore, this embodiment can effectively improve the filling capacity of the deep hole structure and the uniformity of the film thickness.

[0030] Therefore, the magnetron sputtering coating equipment for deep hole structures provided in this application effectively reduces the initial sputtering angle of sputtered particles by setting the first magnetic pole 41 downwards, having two second magnetic poles 42 share a single first magnetic pole 41, and ensuring the distance between the first magnetic pole 41 and the second magnetic pole 42 is less than 3 cm. This reduces the angle between the two sputtering tracks formed by the first magnetic pole 41 and the second magnetic pole 42 to less than 30°. Furthermore, a particle distribution optimizer 5 positioned between the rotating cathode 4 and the carrier plate 1 performs secondary optimization of the sputtering angle to further improve the sputtering efficiency. By gradually reducing the sputtering angle of sputtered particles, this dual optimization mechanism ensures that sputtered particles can enter the deep hole structure at a smaller angle. Therefore, this application can effectively reduce the collision and deposition of sputtered particles on the upper sidewall of the deep hole, so that the sputtered particles can penetrate into the lower region of the deep hole structure, thereby effectively improving the filling capacity and film thickness uniformity of the deep hole structure. In other words, this application can effectively broaden the aspect ratio range of through-hole structures that magnetron sputtering coating equipment for deep hole structures can fill, thereby effectively meeting the aspect ratio requirements of plate-level coating equipment for deep holes.

[0031] In some preferred embodiments, the particle distribution optimizer 5 includes an optimizer body 51 and an electric field generating component 52. The optimizer body 51 is mounted on the sputtering chamber 2 and has a plurality of through holes through which sputtered particles sputtered from the rotating cathode 4 can pass. The electric field generating component 52 is mounted on the sputtering chamber 2 and connected to the optimizer body 51. The electric field generating component 52 generates an electric field on the optimizer body 51 by applying a positive voltage to the optimizer body 51 to reduce the sputtering angle of sputtered particles passing through the through holes. The optimizer body 51 in this embodiment can be understood as a structure with a specific geometric shape, on which regular or irregular through-holes are distributed. The size and arrangement of these through-holes can be designed according to actual coating requirements. These through-holes can provide a path for sputtered particles and also serve as an area for the electric field. It should be understood that since sputtered particles with excessively large initial sputtering angles will come into contact with and deposit on the optimizer body 51, the optimizer body 51 in this embodiment can also remove sputtered particles with excessively large initial sputtering angles. The electric field generating component 52 in this embodiment can be a DC power supply or a pulsed power supply. Its output positive voltage is applied to the optimizer body 51 to make the optimizer body 51 positively charged, thereby forming an electrostatic field around the optimizer body 51 and its through-holes. This electrostatic field can deflect the trajectory of charged sputtered particles downwards, thereby reducing the sputtering angle.

[0032] In some preferred embodiments, the optimizer body 51 may be made of a conductive material (e.g., stainless steel or aluminum alloy) and is designed as a flat plate with a honeycomb or grid structure, on which circular or square through-holes are uniformly distributed. The electric field generating component 52 may be an adjustable DC power supply, with its positive terminal connected to the optimizer body 51 and its negative terminal grounded. When magnetron sputtering begins, the electric field generating component 52 applies a positive voltage to the optimizer body 51. Positively charged metal ions (sputtered particles) sputtered from the target material are repelled by the electric field formed on the optimizer body 51 as they pass through the through-holes. This repulsive force causes these positively charged metal particles to converge toward the central region of the through-holes, thereby effectively reducing the sputtering angle of the sputtered particles. This allows more sputtered particles to enter the deep hole structure at a near-perpendicular incident angle, thereby effectively improving the filling capacity of the deep hole structure and the uniformity of the film thickness.

[0033] In practical applications, existing technologies typically employ an optimizer body 51 with the grid bars parallel to the horizontal movement direction of the carrier plate 1 (see reference). Figure 3 (a) In this case, during the horizontal movement of the carrier plate 1, the film thickness on the surface of the carrier plate 1 located below the grid bar parallel to the horizontal movement direction of the carrier plate 1 will be significantly lower than the film thickness on the surface of the carrier plate 1 not covered by the grid bar, resulting in uneven film thickness and affecting the coating quality.

[0034] To solve this technical problem, refer to Figure 3In some preferred embodiments, the optimizer body 51 includes a plurality of parallel first grid bars 511 and a plurality of parallel second grid bars 512. The first grid bars 511 and the second grid bars 512 intersect each other. The through hole is formed by the first grid bars 511 and the second grid bars 512. The angle between the length direction of the first grid bar 511 and the horizontal movement direction of the carrier plate 1 and the angle between the length direction of the second grid bar 512 and the horizontal movement direction of the carrier plate 1 are both greater than 0° and less than 90°. The optimizer body 51 of this embodiment is composed of multiple parallel first grid bars 511 and multiple parallel second grid bars 512. These first grid bars 511 and second grid bars 512 intersect each other to form multiple through holes through which sputtered particles can pass. Since the angle between the length direction of the first grid bar 511 and the horizontal movement direction of the carrier plate 1 and the angle between the length direction of the second grid bar 512 and the horizontal movement direction of the carrier plate 1 are both set to be greater than 0° and less than 90°, that is, neither the first grid bar 511 nor the second grid bar 512 is parallel to the horizontal movement direction of the carrier plate 1, and no point on the carrier plate 1 will be continuously blocked by the same grid bar for a long time. Therefore, this embodiment can effectively avoid the grid bar forming a blocking effect on the surface of the carrier plate 1, so that the film thickness of the surface of the carrier plate 1 located below the grid bar that is parallel to the horizontal movement direction of the carrier plate 1 is as close as possible to the film thickness of the surface of the carrier plate 1 that is not blocked by the grid bar, thereby effectively improving the film thickness uniformity of the surface of the carrier plate 1, and thus effectively improving the coating quality.

[0035] In some preferred embodiments, the angle between the length direction of the first grid bar 511 and the horizontal movement direction of the carrier plate 1 is 45°, and the first grid bar 511 is perpendicular to the second grid bar 512. Since the first grid bar 511 and the second grid bar 512 are perpendicular in this embodiment, the cross-sectional shape of the through-hole formed by the first grid bar 511 and the second grid bar 512 is rectangular. This embodiment achieves a symmetrical and uniform distribution of through-holes on the optimizer body 51 by setting the angle between the length direction of the first grid bar 511 and the horizontal movement direction of the carrier plate 1 to 45° and making the first grid bar 511 and the second grid bar 512 perpendicular to each other. When the carrier plate 1 moves horizontally under the drive of the horizontal drive assembly 3, sputtered particles pass through these through-holes formed by the grid bars arranged at 45° angles. Since the first grid bar 511 and the second grid bar 512 are not parallel to the moving direction of the carrier plate 1, and the first grid bar 511 and the second grid bar 512 are symmetrically distributed at a 45° angle, the shading time of any grid bar on a specific area of ​​the carrier plate 1 surface is minimized during the entire moving process of the carrier plate 1, and the shading effect can be uniformly distributed to the entire surface of the carrier plate 1. Therefore, this embodiment can make the deposition of sputtered particles on the surface of the carrier plate 1 more uniform, thereby further improving the uniformity of the film thickness on the surface of the carrier plate 1.

[0036] In some preferred embodiments, the optimizer body 51 is hinged to the sputtering chamber 2. The magnetron sputtering coating equipment for deep hole structures also includes a swing drive assembly (not shown in the figure). The swing drive assembly is mounted on the sputtering chamber 2 and connected to the optimizer body 51. The swing drive assembly is used to drive the optimizer body 51 to swing in a direction perpendicular to the horizontal movement direction of the carrier plate 1. In this embodiment, the optimizer body 51 is hinged to the sputtering chamber 2 through an existing hinge structure. The swing drive assembly in this embodiment is a mechanical drive device. The swing drive assembly can be an existing stepper motor, servo motor, cylinder, or hydraulic cylinder, etc. The swing drive assembly is used to provide driving force to the optimizer body 51 so that the optimizer body 51 can swing according to a preset trajectory or range. In practical applications, the swing drive assembly is mounted on the sputtering chamber 2 and connected to the optimizer body 51 through an appropriate connecting mechanism (e.g., linkage, gear, or belt), thereby achieving precise control of the swing of the optimizer body 51. In this embodiment, the optimizer body 51 swings in a direction perpendicular to the horizontal movement direction of the carrier plate 1. This means that the swing axis of the optimizer body 51 is parallel to the horizontal movement direction of the carrier plate 1, so that the optimizer body 51 reciprocates in a plane perpendicular to the movement direction of the carrier plate 1. That is, if the carrier plate 1 moves horizontally along the X-axis, the optimizer body 51 swings along the Y-axis. This embodiment can dynamically change the effective opening area of ​​the through hole of the optimizer body 51 relative to the sputtered particle incident direction by swinging the optimizer body 51, thereby reducing the fixed obstruction of sputtered particles.

[0037] This embodiment effectively solves the problem of localized obstruction of sputtered particles that may occur with a fixed optimizer body 51 by enabling the optimizer body 51 to swing. Specifically, when the optimizer body 51 is driven to swing in a direction perpendicular to the horizontal movement direction of the carrier plate 1, the through-holes on it exhibit a dynamically changing geometric configuration relative to the incident sputtered particle stream. Due to this dynamic change, the possibility of sputtered particles being blocked by the solid portion of the optimizer body 51 when passing through it is greatly reduced. For example, at a certain moment, the edge of a through-hole may block some particles, but as the optimizer body 51 swings, the blocking position will quickly move, thereby avoiding long-term, fixed-area obstruction and ensuring that sputtered particles can pass through the optimizer body 51 more uniformly and effectively. Therefore, this embodiment ensures that sputtered particles can reach all areas of the carrier plate 1 more fully by enabling the optimizer body 51 to swing, thereby improving the uniformity and overall efficiency of the coating.

[0038] In some preferred embodiments, when the rotating cathode 4 drives the first magnetic pole 41 and the second magnetic pole 42 to swing, the angle between the second magnetic pole 42 and the vertical direction is 0-30°, and the swing range of the optimizer body 51 is -10 to 10 mm. The swinging of the magnetic poles (first magnetic pole 41 and second magnetic pole 42) located inside the rotating cathode 4 in this embodiment is prior art, and its working principle will not be discussed in detail here. When the rotating cathode 4 drives the first magnetic pole 41 and the second magnetic pole 42, the angle between the second magnetic pole 42 and the vertical direction in this embodiment is 0-30°, so as to simultaneously optimize the sputtering angle of the sputtered particles and increase the sputtering area of ​​the sputtered particles. This embodiment, by limiting the swing angle of the rotating cathode 4 driving the first magnetic pole 41 and the second magnetic pole 42, and the swing range of the optimizer body 51, can synergistically optimize the distribution of sputtered particles and increase the sputtering area. Specifically, by limiting the angle between the second magnetic pole 42 and the vertical direction to the range of 0-30° when the rotating cathode 4 drives the first magnetic pole 41 and the second magnetic pole 42 to swing, the sputtered particles have a more optimized angular distribution and can cover a larger area in the initial stage, allowing the sputtered particles to enter the deep hole structure at a smaller sputtering angle. At the same time, by limiting the swing range of the optimizer body 51 to -10 to 10 mm, the optimizer body 51 can periodically and regularly change its relative position above the carrier plate 1, ensuring that each area on the carrier plate 1 is exposed to the sputtered particle stream at different time periods, thereby avoiding the problem of uneven film thickness caused by local areas being blocked for a long time. Therefore, this embodiment can effectively improve the coating quality and coating efficiency of the deep hole structure.

[0039] In some preferred embodiments, the forward voltage value is 0-100V. This embodiment is equivalent to limiting the range of the forward voltage applied by the electric field generating component 52 to the optimizer body 51 to between 0 volts and 100 volts. Those skilled in the art can precisely adjust the forward voltage value according to factors such as the specific coating material, deep hole structure size, sputtering power, and required thin film characteristics. It should be understood that this embodiment can apply a constant forward voltage to the optimizer body 51, or it can apply a forward voltage varying within a preset range (e.g., 20-100V) to the optimizer body 51.

[0040] In some preferred embodiments, the length of the optimizer body 51 is 30-60 mm longer than the effective sputtering region of the rotating cathode 4, and the ratio of the width of the optimizer body 51 to the width of the effective sputtering region of the rotating cathode 4 is 1.5-3. The effective sputtering region in this embodiment refers to the area where sputtering actually occurs on the target surface (i.e., the target surface is bombarded by plasma) and sputtered particles are generated when the rotating cathode 4 is in operation. This embodiment extends the optimizer body 51 beyond the effective sputtering region of the rotating cathode 4 in the length direction by 30-60 mm, forming an additional coverage area. This allows sputtered particles generated at the edge of the effective sputtering region in the length direction to be covered by the optimizer body 51 and guided by the electric field applied by the electric field generating component 52. This embodiment sets the ratio of the width of the optimizer body 51 to the width of the effective sputtering area of ​​the rotating cathode 4 to 1.5-3, allowing the optimizer body 51 to extend beyond the effective sputtering area of ​​the rotating cathode 4 in the width direction, thus forming an additional coverage area. This ensures that sputtered particles generated at the edge of the effective sputtering area in the width direction are covered by the optimizer body 51 and guided by the electric field applied by the electric field generating component 52. This embodiment effectively captures and guides sputtered particles from the effective sputtering area by making the length of the optimizer body 51 30-60 mm longer than the effective sputtering area of ​​the rotating cathode 4 and setting the ratio of the width of the optimizer body 51 to the width of the effective sputtering area of ​​the rotating cathode 4 to 1.5-3. This prevents sputtered particles from directly depositing on the carrier plate 1 without being subjected to an electric field. Therefore, this embodiment can minimize the size of the optimizer body 51 while ensuring the sputtering angle optimization effect of the optimizer body 51 on sputtered particles, thereby effectively reducing the production and maintenance costs of the optimizer body 51.

[0041] In some preferred embodiments, the power density applied by the rotating cathode 4 to the target is 20-40 kW / m. The power density in this embodiment refers to the electrical power applied by the rotating cathode 4 to a unit area of ​​the target. This power density is a key parameter affecting sputtering rate, film density, and uniformity. This embodiment can adjust the power density applied by the rotating cathode 4 to the target by adjusting the output power of the power supply to the rotating cathode 4. By limiting the power density applied by the rotating cathode 4 to the target to 20-40 kW / m, this embodiment achieves a sufficiently high sputtering rate to improve production efficiency while avoiding problems such as target overheating, target poisoning, abnormal discharge, and damage to the film structure caused by excessively high sputtered particle energy due to excessively high power density applied to the target. In other words, this embodiment effectively balances the relationship between sputtering efficiency and film quality.

[0042] In some preferred embodiments, the magnetic field strength uniformity within the effective sputtering region of the rotating cathode 4 is less than or equal to 3%. In this embodiment, magnetic field strength uniformity refers to the percentage difference between the maximum and minimum magnetic field strength within the effective sputtering region of the rotating cathode 4 relative to the average magnetic field strength within the effective sputtering region of the rotating cathode 4. This embodiment achieves a uniform sputtered particle stream by ensuring that the sputtering rate at each point on the target surface is as consistent as possible by maintaining a magnetic field strength uniformity of less than or equal to 3% within the effective sputtering region. This embodiment can adjust the magnetic field strength uniformity within the effective sputtering region by adjusting the magnet arrangement of the first magnetic pole 41 and the second magnetic pole 42 (e.g., changing the arrangement or spacing of the magnets in the first magnetic pole 41 and the second magnetic pole 42). By controlling the magnetic field strength uniformity within the effective sputtering region of the rotating cathode 4 to less than or equal to 3%, this embodiment ensures that the target surface is bombarded with ions as uniformly as possible during sputtering, resulting in a uniform sputtered particle stream. This uniform sputtered particle stream effectively reduces local film thickness differences during subsequent coating processes, thereby effectively improving the film thickness uniformity deposited on the carrier plate 1.

[0043] As can be seen from the above, the magnetron sputtering coating equipment for deep hole structures provided in this application effectively reduces the initial sputtering angle of sputtered particles by setting the first magnetic pole 41 downwards, having two second magnetic poles 42 share a first magnetic pole 41, and ensuring the distance between the first magnetic pole 41 and the second magnetic pole 42 is less than 3 cm. This reduces the angle between the two sputtering tracks formed by the first magnetic pole 41 and the second magnetic pole 42 to less than 30°. Furthermore, a particle distribution optimizer 5 positioned between the rotating cathode 4 and the carrier plate 1 performs secondary optimization of the sputtering angle of the sputtered particles to further improve the initial sputtering angle. By gradually reducing the sputtering angle of sputtered particles, this dual optimization mechanism ensures that sputtered particles can enter the deep hole structure at a smaller angle. Therefore, this application can effectively reduce the collision and deposition of sputtered particles on the upper sidewall of the deep hole, so that the sputtered particles can penetrate into the lower region of the deep hole structure, thereby effectively improving the filling capacity and film thickness uniformity of the deep hole structure. In other words, this application can effectively broaden the aspect ratio range of through-hole structures that magnetron sputtering coating equipment for deep hole structures can fill, thereby effectively meeting the aspect ratio requirements of plate-level coating equipment for deep holes.

[0044] In the embodiments provided in this application, it should be understood that relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0045] The above are merely embodiments of this application and are not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A magnetron sputtering coating apparatus for deep hole structures, used for coating deep hole structures on a carrier plate, characterized in that, The magnetron sputtering coating equipment for deep hole structures includes: Sputtering chamber; A horizontal drive assembly, installed within the sputtering chamber, is used to drive the carrier plate to move horizontally. A rotating cathode is installed in the sputtering chamber and above the carrier plate. It includes a first magnetic pole and two second magnetic poles. The lengths of the first magnetic pole and the second magnetic poles are both greater than the length of the side of the carrier plate that is perpendicular to its horizontal movement direction. The first magnetic pole is disposed downward between the two second magnetic poles. The distance between the first magnetic pole and the second magnetic pole is less than or equal to 3 cm. The included angle between the two sputtering tracks formed by the first magnetic pole and the second magnetic pole is less than 30°. A particle distribution optimizer is installed in the sputtering chamber and located between the rotating cathode and the carrier plate, covering the effective sputtering area of ​​the rotating cathode, and is used to reduce the sputtering angle of the sputtered particles sputtered from the rotating cathode.

2. The magnetron sputtering coating equipment for deep hole structures according to claim 1, characterized in that, The particle distribution optimizer includes an optimizer body and an electric field generating component. The optimizer body is mounted on the sputtering chamber and has multiple through holes through which sputtered particles sputtered by the rotating cathode can pass. The electric field generating component is mounted on the sputtering chamber and connected to the optimizer body. The electric field generating component generates an electric field on the optimizer body by applying a positive voltage to the optimizer body to reduce the sputtering angle of sputtered particles passing through the through holes.

3. The magnetron sputtering coating equipment for deep hole structures according to claim 2, characterized in that, The optimizer body includes multiple parallel first grid bars and multiple parallel second grid bars. The first grid bars intersect with the second grid bars. The through hole is formed by the first grid bars and the second grid bars. The angle between the length direction of the first grid bar and the horizontal movement direction of the carrier plate and the angle between the length direction of the second grid bar and the horizontal movement direction of the carrier plate are both greater than 0° and less than 90°.

4. The magnetron sputtering coating equipment for deep hole structures according to claim 3, characterized in that, The angle between the length direction of the first grid bar and the horizontal movement direction of the carrier plate is 45°, and the first grid bar is perpendicular to the second grid bar.

5. The magnetron sputtering coating equipment for deep hole structures according to claim 2, characterized in that, The optimizer body is hinged to the sputtering chamber. The magnetron sputtering coating equipment for deep hole structures also includes a swing drive assembly, which is mounted on the sputtering chamber and connected to the optimizer body. The swing drive assembly is used to drive the optimizer body to swing in a direction perpendicular to the horizontal movement direction of the carrier plate.

6. The magnetron sputtering coating equipment for deep hole structures according to claim 5, characterized in that, When the rotating cathode drives the first and second magnetic poles to swing, the angle between the second magnetic pole and the vertical direction is 0-30°, and the swing range of the optimizer body is -10 to 10 mm.

7. The magnetron sputtering coating equipment for deep hole structures according to claim 2, characterized in that, The forward voltage value is 0-100V.

8. The magnetron sputtering coating equipment for deep hole structures according to claim 2, characterized in that, The length of the optimizer body is 30-60 mm longer than the length of the effective sputtering area of ​​the rotating cathode, and the ratio of the width of the optimizer body to the width of the effective sputtering area of ​​the rotating cathode is 1.5-3.

9. The magnetron sputtering coating equipment for deep hole structures according to claim 1, characterized in that, The power density applied to the target by the rotating cathode is 20-40 kW / m.

10. The magnetron sputtering coating equipment for deep hole structures according to claim 1, characterized in that, The uniformity of the magnetic field strength within the effective sputtering region of the rotating cathode is less than or equal to 3%.

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