Display panel, driving method thereof and display device

Abstract

The embodiment of the invention provides a display panel, a driving method thereof and a display device. The display panel comprises a display area; the display area comprises a plurality of temperature sensing areas, and the plurality of temperature sensing areas are arranged in the display area in an array mode; the same temperature sensing area comprises at least two first thin film transistors, and the at least two first thin film transistors of the same temperature sensing area are connected in parallel; and the control electrode of the first thin film transistor is electrically connected with the first electrode. In the embodiment of the invention, according to the sum of the conduction currents generated by the at least two first thin film transistors in the display area, the temperature change condition in the temperature sensing area can be obtained, and the temperature detection precision of the display area can be improved.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a display panel and its driving method, and a display device. Background Technology

[0002] Temperature changes in the display panel are closely related to the display effect. Specifically, temperature changes within the display panel affect the operating state of the transistors, which in turn affects the final display effect.

[0003] Currently, temperature sensors, such as resistance wires, are typically placed in the non-display area of ​​the display panel to monitor its temperature. However, temperature sensors in the non-display area struggle to accurately detect temperature changes within the display area. Summary of the Invention

[0004] In view of this, this application provides a display panel and its driving method, as well as a display device, to improve the accuracy of temperature detection in the display area.

[0005] In a first aspect, this application provides a display panel, including a display area; The display area includes multiple temperature sensing areas, which are arranged in an array within the display area. The same temperature sensing region includes at least two first thin-film transistors, and the at least two first thin-film transistors in the same temperature sensing region are connected in parallel; and the control electrode and the first electrode of the first thin-film transistor are electrically connected.

[0006] Secondly, this application provides a driving method for a display panel, the display panel including a display area; The display area includes multiple sub-pixels and multiple temperature sensing areas, which are arranged in an array within the display area. The same temperature sensing region includes at least two first thin-film transistors, and the at least two first thin-film transistors in the same temperature sensing region are connected in parallel. Furthermore, the control electrode and the first electrode of the first thin-film transistor are electrically connected; The driving methods include: Provide detection control signals to the control electrode and the first electrode of the first thin-film transistor; The conduction current of the first thin-film transistor is detected; the conduction current is related to the temperature of the temperature sensing area where the first thin-film transistor is located. Adjust the data voltage applied to the sub-pixel based on the conduction current.

[0007] Based on the same inventive concept, this application also provides a display device, including the display panel provided in the first aspect.

[0008] Compared with the prior art, the display panel, driving method, and display device provided by the present invention achieve at least the following beneficial effects: In this invention, the conduction current generated by the first thin-film transistor disposed in the display area can reflect the temperature change in the temperature sensing area. That is, the first thin-film transistor can participate in the temperature detection of the display area, which can improve the accuracy of the temperature detection of the display area.

[0009] Furthermore, in this embodiment of the invention, at least two first thin-film transistors are disposed within the same temperature sensing region, and these at least two first thin-film transistors within the same temperature sensing region are connected in parallel. During temperature detection, the sum of the conduction currents of the at least two first thin-film transistors within the same temperature sensing region can be used as the temperature detection data output for that temperature sensing region. Compared to the method of disposing of only one first thin-film transistor within the temperature sensing region, the arrangement provided in this embodiment of the invention can reduce the impact of fluctuations in the fabrication process of the first thin-film transistor on the accuracy of temperature detection, better resist the process fluctuations during the fabrication of the first thin-film transistor, and thus improve the accuracy of temperature detection within the temperature sensing region.

[0010] Furthermore, in this embodiment of the invention, the control electrode and the first electrode of the first thin-film transistor are electrically connected. This can be achieved by using the same trace to simultaneously connect the first electrode and the control electrode, which helps reduce the number of traces in the display area, thereby reducing the space occupied by the traces and leaving more space for sub-pixels. This, in turn, helps increase the number of pixels per inch (PPI) in the display area. In addition, using this configuration, the same circuit can be used to connect to both the first electrode and the control electrode separately to provide the necessary signals, without needing to set up separate circuits for the first electrode and the control electrode. This further simplifies the structure of the display panel and reduces the space occupied by the circuits providing signals to the first electrode and the control electrode. Attached Figure Description

[0011] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 This is a schematic diagram of a display panel in the related art; Figure 2 A schematic diagram of a display panel provided in an embodiment of the present invention; Figure 3 for Figure 2An enlarged schematic diagram of the first thin-film transistor in the image; Figure 4 for Figure 2 The timing diagram of the detection control branch is shown below; Figure 5 A schematic diagram of another display panel provided in an embodiment of the present invention; Figure 6 A schematic diagram of yet another display panel provided in an embodiment of the present invention; Figure 7 A schematic diagram of yet another display panel provided in an embodiment of the present invention; Figure 8 for Figure 7 An equivalent circuit diagram of a sub-pixel in the image; Figure 9 This is a schematic diagram of a driving method for a display panel provided in an embodiment of the present invention; Figure 10 This is a schematic diagram of a display device provided in an embodiment of the present invention. Detailed Implementation

[0013] To better understand the technical solution of this application, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0014] It should be understood that the described embodiments are merely some, not all, of the embodiments in this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.

[0015] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” as used in the embodiments of this invention and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0016] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0017] In related technologies, such as Figure 1 As shown, Figure 1This is a schematic diagram of a display panel in the related technology. The non-display area 01' of the display panel 10' may be provided with a temperature sensing trace 011'. When the temperature in the non-display area 01' changes, the impedance of the temperature sensing trace 011' changes accordingly, which in turn causes the electrical signal transmitted on it to change. The temperature change in the non-display area 01' can be analyzed and known based on the change in the electrical signal.

[0018] However, it is difficult to obtain the temperature changes within the display area 02' based solely on changes in the electrical signal on the temperature-sensing trace 011'. Furthermore, the display area 02' typically contains structures such as transistors (e.g., transistors in pixel driving circuits), which generate heat during operation, causing temperature variations within the display area 02' that differ from the temperature within the non-display area 01'. Therefore, the approach of placing the temperature-sensing trace 011' within the non-display area 01' in related technologies makes it difficult to detect temperature changes within the display area 02', which in turn affects subsequent brightness adjustments within the display area 02' and hinders the resolution of the display unevenness problem within the display area 02'.

[0019] To address the above problems, embodiments of the present invention provide a display panel, such as... Figure 2 As shown, Figure 2 This is a schematic diagram of a display panel provided in an embodiment of the invention. The display panel 10 includes a display area 01, and a pixel driving circuit may be provided in the display area 01. Figure 2 (not shown) and light-emitting devices ( Figure 2 (Not shown) The pixel driving circuit is used to provide driving current to the light-emitting device to drive the light-emitting device to light up. The pixel driving circuit may include multiple transistors.

[0020] like Figure 2 As shown, the display area 01 includes multiple temperature sensing areas 11, which are arranged in an array within the display area 01. Each temperature sensing area 11 can be equipped with a temperature sensing device. This design allows for individual monitoring of temperature changes within different temperature sensing areas 11. That is, the temperature changes in the area corresponding to any temperature sensing area 11 within the display area 01 can be monitored.

[0021] The temperature sensing devices in the same temperature sensing region 11 include at least two first thin-film transistors 110. Figure 2 and Figure 3 As shown, Figure 3This is an enlarged schematic diagram of a first thin-film transistor (TFT) according to an embodiment of the present invention. The first TFT 110 may include a first electrode 110d, a second electrode 110s, and a control electrode 110g. One of the first electrode 110d and the second electrode can be the source, and the other can be the drain. For example, the first electrode 110d is the drain, and the second electrode 110s is the source. The control electrode 110g can receive a gate control signal. When the gate control signal received by the control electrode 110g is an enable signal, the first TFT 110 is turned on, and a corresponding conduction current is generated in conjunction with the voltage received by the first electrode 110d and the second electrode 110s. .

[0022] On current satisfy: in, The carrier mobility of a thin-film transistor The capacitance per unit area of ​​the gate capacitor of a thin-film transistor. The width-to-length ratio of the channel in a thin-film transistor (TFT) This represents the gate-source voltage difference when the thin-film transistor is turned on. This represents the threshold voltage of a thin-film transistor.

[0023] In this embodiment of the invention, the first thin-film transistor 110 can operate in the saturation region when performing temperature detection. When the first thin-film transistor 110 operates in the saturation region, the drain-source voltage difference... The increase in conduction current The changes are small (can be considered negligible). The carrier mobility μ and threshold voltage of the thin-film transistor... It changes with temperature. Therefore, temperature changes cause variations in carrier mobility μ and threshold voltage. After the change, the conduction current It can change. Furthermore, the gate-source voltage difference of the first thin-film transistor 110... Generally much larger than the threshold voltage Therefore, the conduction current of the first thin-film transistor 110 changes substantially linearly with temperature. Thus, in this embodiment of the invention, the conduction current of the first thin-film transistor 110 can be detected. The temperature changes in the region where the first thin-film transistor 110 is located (i.e., the temperature sensing region 11) can be obtained.

[0024] Furthermore, in this embodiment of the invention, at least two first thin-film transistors 110 are provided in the same temperature sensing region 11, and the at least two first thin-film transistors 110 in the same temperature sensing region 11 are connected in parallel. The at least two first thin-film transistors 110 connected in parallel means that the control electrodes 110g of the at least two first thin-film transistors 110 are electrically connected to each other, the first electrodes 110d are electrically connected to each other, and the second electrodes 110s are electrically connected to each other. Figure 2 The diagram illustrates nine first thin-film transistors 110 connected in parallel within the same temperature sensing region 11.

[0025] During temperature detection, the sum of the conduction currents of at least two first thin-film transistors 110 within the same temperature sensing region 11 can be used as the temperature detection data output for that temperature sensing region 11. Compared to setting only one first thin-film transistor 110 within the temperature sensing region 11, the arrangement provided in this embodiment of the invention can reduce the impact of process fluctuations in the fabrication of the first thin-film transistor 110 on the accuracy of temperature detection, better resist process fluctuations in the fabrication of the first thin-film transistor 110, and improve the accuracy of temperature detection within the temperature sensing region 11.

[0026] Furthermore, combined Figure 2 and Figure 3 In this embodiment of the invention, the control electrode 110g and the first electrode 110d of the first thin-film transistor 110 are electrically connected. That is, the first electrode 110d and the control electrode 110g receive the same electrical signal. This arrangement allows for simultaneous electrical connection of the first electrode 110d and the control electrode 110g using the same trace, which helps reduce the number of traces in the display area 01, thereby reducing the space occupied by the traces in the display area 01 and leaving more space for sub-pixels. This, in turn, helps increase the number of pixels per inch (PPI) in the display area 01. Furthermore, this arrangement also allows for the use of the same circuit to connect to both the first electrode 110d and the control electrode 110g to provide the necessary signals, without requiring separate circuits for each. This further simplifies the structure of the display panel and reduces the space occupied by the circuits providing signals to the first electrode 110d and the control electrode 110g.

[0027] For example, such as Figure 2As shown, the display panel also includes multiple detection control buses L1a and sensing buses L2a. The detection control bus L1a is electrically connected to the control electrode 110g and the first electrode 110d of the first thin-film transistor 110. The detection control bus L1a is used to transmit detection control signals to the control electrode 110g and the first electrode 110d. The sensing bus L2a is electrically connected to the second electrode 110s of the first thin-film transistor 110. The sensing bus L2a is used to receive the conduction current generated by the first thin-film transistor 110. .

[0028] For example, such as Figure 2 As shown, the control electrode 110g and the first electrode 110d of a plurality of first thin-film transistors 110 in the same temperature sensing region 11 are connected to the same detection control bus L1a. Furthermore, the second electrode 110s of a plurality of first thin-film transistors 110 in the same temperature sensing region 11 are connected to the same sensing bus L2a.

[0029] For example, such as Figure 2 As shown, the control electrodes 110g of the first thin-film transistors 110 in two adjacent temperature sensing regions 11 in the first direction X are electrically connected. The second electrodes 110s of the first thin-film transistors 110 in two adjacent temperature sensing regions 11 in the first direction are insulated from each other, such as being electrically connected to different sensing buses L2a.

[0030] In this embodiment of the invention, a detection control bus L1a is electrically connected to the first thin-film transistors 110 of a plurality of temperature sensing areas 11 arranged in a first direction X. During temperature detection, the first thin-film transistors 110 in the plurality of temperature sensing areas 11 arranged in the first direction X can be simultaneously turned on or off. Furthermore, by electrically connecting the second terminals 110s of the first thin-film transistors 110 in two adjacent temperature sensing areas 11 in the first direction X to different sensing buses L2a, the first thin-film transistors 110 in two adjacent temperature sensing areas 11 in the first direction X can simultaneously output independent conduction currents through different sensing buses L2a, thus enabling simultaneous temperature detection of two adjacent temperature sensing areas 11 in the first direction X. It can be seen that, by adopting this arrangement, on the one hand, the number of detection control buses L1a can be reduced, which is beneficial to simplifying the wiring in the display panel; on the other hand, the temperature detection process of two adjacent temperature sensing areas 11 in the first direction X can be shortened, thereby improving the temperature detection efficiency.

[0031] Optional, such as Figure 2As shown, display area 01 also includes a detection control branch line L1b. The detection control branch line L1b can be electrically connected to the aforementioned detection control bus L1a. In this embodiment of the invention, at least a portion of the detection control bus L1a is located in the non-display area 02, and at least a portion of the detection control branch line L1b is located in display area 01. The detection control branch line L1b is used to electrically connect the detection control bus L1a and the first thin-film transistor 110.

[0032] For example, such as Figure 2 As shown, the temperature sensing region 11 includes at least two first thin-film transistor rows 110r, each first thin-film transistor row 110r including at least two first thin-film transistors 110 arranged along a first direction X, and the at least two first thin-film transistor rows 110r arranged along a second direction Y.

[0033] The same detection control branch L1b is electrically connected to at least two first thin-film transistors 110 in the same first thin-film transistor row 110r. Different detection control branches L1b are electrically connected to different first thin-film transistor rows 110r.

[0034] For example, such as Figure 2 As shown, the detection control branch line L1b can extend along the first direction X to penetrate the display area 01, so that the corresponding first thin film transistor rows 110r in two adjacent temperature sensing areas 11 in the first direction X can be electrically connected through the same detection control branch line L1b.

[0035] Optional, such as Figure 2 As shown, the number of first thin-film transistor rows 110r in two adjacent temperature sensing regions 11 in the first direction X can be the same.

[0036] Optional, such as Figure 2 As shown, multiple detection and control branches L1b can be arranged along the second direction Y.

[0037] For example, in an embodiment of the present invention, the control electrode 110g of the first thin-film transistor 110 in two adjacent temperature sensing regions 11 in the second direction Y receives different detection control signals. For example... Figure 2 As shown, two adjacent temperature sensing regions 11 in the second direction Y can be connected to different detection and control buses L1a. Furthermore, the second electrode 110s of the first thin-film transistor 110 in the two adjacent temperature sensing regions 11 in the second direction Y is electrically connected to the same sensing bus L2a.

[0038] During temperature detection, the first thin-film transistors 110 in two adjacent temperature sensing areas 11 in the second direction Y are turned on sequentially under the control of different detection control buses L1a. The same sensing bus L2a electrically connected to both can output the corresponding conduction current sequentially. This arrangement reduces the number of sensing buses L2a, which helps simplify the wiring within the display panel.

[0039] For example, such as Figure 2 As shown, the display area 02 also includes a sensing branch line L2b electrically connected to the sensing bus L2a. At least a portion of the sensing bus L2a is located in the non-display area 02, and at least a portion of the sensing branch line L2b is located in the display area 01. The sensing branch line L2b is used to electrically connect the sensing bus L2a and the first thin-film transistor 110.

[0040] Optional, such as Figure 2 As shown, the temperature sensing region 11 includes at least two first thin-film transistor columns 110c, each first thin-film transistor column 110c including at least two first thin-film transistors 110 arranged along the second direction Y, and the at least two first thin-film transistor columns 110c arranged along the first direction X.

[0041] The same sensing branch L2b is electrically connected to multiple first thin-film transistors 110 in the same first thin-film transistor column 110c. Different sensing branches L2b are electrically connected to different first thin-film transistor columns 110c.

[0042] For example, such as Figure 2 As shown, the sensing branch line L2b can extend through the display area 01 along the second direction Y, so that the corresponding first thin film transistor columns 110c in two adjacent temperature sensing areas 11 in the second direction Y can be electrically connected through the same sensing branch line L2b.

[0043] Optional, such as Figure 2 As shown, the number of first thin-film transistor columns 110c in two adjacent temperature sensing regions 11 in the second direction Y can be the same.

[0044] For example, such as Figure 2 As shown, multiple sensing branches L2b can be arranged along the second direction Y.

[0045] Figure 2 The display area 01 includes 2×3 temperature sensing regions 11 arranged in an array along the first direction X and the second direction Y, and each temperature sensing region 11 includes 3×3 first thin-film transistors 110 arranged in an array along the first direction X and the second direction Y, as illustrated. Correspondingly, in Figure 2The diagram shows two detection control buses, labeled L1a_1 and L1a_2, three sensing buses L2a, three detection control branches electrically connected to each detection control bus L1a, and three sensing branches L2b electrically connected to each sensing bus L2a. Figure 2 In the diagram, the three detection control branches electrically connected to the detection control bus L1a_1 are labeled as L1b_11, L1b_12 and L1b_13, respectively, and the three detection control branches electrically connected to the detection control bus L1a_2 are labeled as L1b_21, L1b_22 and L1b_23, respectively.

[0046] For example, along the second direction Y, the first thin-film transistors 110 in different temperature sensing regions 11 are turned on in sequence so that the sensing bus L2a, which is electrically connected to the plurality of temperature sensing regions 11 arranged in the second direction Y, can output the on-current in sequence.

[0047] Combination Figure 2 and Figure 4 As shown, Figure 4 for Figure 2 The timing diagram of the detection control branches shown indicates that during the detection period T, in the first period t1, the three detection control branches L1b_11, L1b_12 and L1b_13, which are electrically connected to the first detection control bus L1a, all transmit a high-level enable level. Then, in the second period t2, the three detection control branches L1b_21, L1b_22 and L1b_23, which are electrically connected to the second detection control bus L1a, all transmit a high-level enable level.

[0048] Using this configuration, temperature sensing data (i.e. conduction current) of multiple temperature sensing areas 11 arranged along the second direction Y can be transmitted in a time-division manner using a single sensing bus L2a. This ensures temperature detection of multiple temperature sensing areas 11 without the need to configure too many sensing buses L2a.

[0049] In another alternative embodiment, the present invention may also allow the control electrode 110g and the first electrode 110d of the first thin-film transistor 110 to receive different signals. For example... Figure 5 As shown, Figure 5 This is a schematic diagram of another display panel provided in an embodiment of the present invention. The display panel further includes a detection control bus L1a, a detection control branch line L1b, and a power signal line L3. The detection control bus L1a and the detection control branch line L1b are electrically connected. In the display area 01, the detection control branch line L1b is electrically connected to the control electrode 110g of the first thin-film transistor 110. The power signal line L3 is electrically connected to the first electrode 110d of the first thin-film transistor 110.

[0050] For example, such as Figure 5As shown, the power signal line L3 may include a first part L31 extending along the first direction X and a second part L32 extending along the second direction Y. The two parts are electrically connected to each other, so that the power signal line L3 forms a grid-like wiring structure, thereby reducing the voltage drop of the signal in the power signal line L3 during transmission, ensuring the stability of the transmitted electrical signal, and thus improving the accuracy of temperature detection.

[0051] In this embodiment of the invention, the first thin-film transistor 110 can be an N-type transistor or a P-type transistor. Figure 2 , Figure 3 and Figure 5 The following illustration uses an N-type transistor as an example of a first thin-film transistor 110 (but this does not mean that the solution of this application is limited to using an N-type transistor as the first thin-film transistor 110). When the first thin-film transistor 110 is an N-type transistor, the first thin-film transistor 110 can be turned on when the electrical signal received by the control electrode 110g of the first thin-film transistor 110 is high; and the first thin-film transistor 110 can be turned off when the electrical signal received by the control electrode 110g of the first thin-film transistor 110 is low.

[0052] In one embodiment of this application, the first thin-film transistor 110 includes an oxide thin-film transistor. That is, the semiconductor layer in the first thin-film transistor 110 may include an oxide semiconductor material. Oxide thin-film transistors have advantages such as high electron mobility and low leakage current. Using an oxide thin-film transistor as the design of the first thin-film transistor 110 is beneficial to improving the turn-on response speed of the first thin-film transistor 110 and improving the output accuracy of the conduction current of the first thin-film transistor 110, which further helps to improve the temperature detection accuracy.

[0053] For example, oxide thin-film transistors include indium gallium zinc oxide (IGZO).

[0054] Alternatively, in embodiments of the present invention, amorphous silicon (aSi) or low-temperature polysilicon (LTPS) transistors may be used to form the first thin-film transistor 110.

[0055] For example, such as Figure 4As shown, the detection control signal provided to the control electrode 110g of the first thin-film transistor 110 is a pulse signal that switches between an enable level and an disable level. The enable level is used to control the first thin-film transistor 110 to turn on, and the disable level is used to control the first thin-film transistor 110 to turn off. The enable level is V1, and the disable level is V2. For example, when the first thin-film transistor 110 is an oxide thin-film transistor, the enable level can correspond to a high level, and the disable level can correspond to a low level. When the first thin-film transistor 110 is a low-temperature polycrystalline silicon thin-film transistor, the enable level can correspond to a low level, and the disable level can correspond to a high level.

[0056] When temperature detection is performed using the first thin-film transistor 110, the second electrode 110s of the first thin-film transistor 110 receives a third level, which is Vs, where V1-Vs<|V2-Vs|.

[0057] When the first thin-film transistor 110 is prone to a forward bias state due to long-term on-time, this setting method can weaken or even eliminate the forward bias state of the first thin-film transistor 110, ensuring that the device characteristics of the first thin-film transistor 110 remain basically stable over time, thereby improving the accuracy of temperature detection using the first thin-film transistor 110.

[0058] In another optional implementation, the embodiments of the present invention may also set V1-Vs > |V2-Vs|. When the first thin-film transistor 110 is prone to a negative bias state due to long-term on-time, this design can weaken or even eliminate the negative bias state of the first thin-film transistor 110, ensuring that the device characteristics of the first thin-film transistor 110 remain basically stable over time, thereby improving the accuracy of temperature detection using the first thin-film transistor 110.

[0059] For example, such as Figure 6 As shown, Figure 6 This is a schematic diagram of another display panel provided in an embodiment of the present invention. The display panel 10 further includes a non-display area 02, which may at least partially surround the display area 01.

[0060] like Figure 6 As shown, the non-display area 02 includes a sensing circuit 021 and a temperature control circuit 022. The temperature control circuit 022 is electrically connected to a detection control branch line L1b via a detection control bus L1a, and the detection control branch line L1b is electrically connected to the control electrode 110g of the first thin-film transistor 110. The electrical signal output by the temperature control circuit 022 can be used to control the on / off state of the first thin-film transistor 110.

[0061] The sensing circuit 021 is electrically connected to the second terminal 110s of the first thin film transistor 110 to receive the conduction current output by the first thin film transistor 110 and detect the conduction current to obtain an electrical signal that can characterize the temperature information of the temperature sensing area 11.

[0062] For example, such as Figure 6 As shown, the sensing circuit 021 is electrically connected to multiple sensing buses L2a.

[0063] In this embodiment of the invention, the sensing circuit 021 further includes a second power supply module, which provides the aforementioned voltage Vs to the second terminal 110s of the first thin-film transistor 110. Optionally, Vs can be 0V. For example, the second terminal 110s of the first thin-film transistor 110 can be grounded.

[0064] Optional, such as Figure 7 As shown, Figure 7 This is a schematic diagram of another display panel provided in an embodiment of the present invention. The display area 01 further includes sub-pixels 03.

[0065] Combination Figure 8 As shown, Figure 8 for Figure 7 The diagram shows an equivalent circuit diagram of a sub-pixel, where sub-pixel 03 includes a second thin-film transistor 030.

[0066] like Figure 7 As shown, the display area 01 also includes scan lines 031 and data lines 032, both of which are connected to the second thin-film transistor (TFT). Figure 7 (Not shown) Electrical connection, wherein scan line 031 may extend along a first direction X, and data line 032 may extend along a second direction Y.

[0067] like Figure 8 As shown, sub-pixel 03 includes a pixel driving circuit 033 and a light-emitting element 034 electrically connected. The pixel driving circuit 033 includes a driving transistor T1, a data writing transistor T2, a first light-emitting control transistor T3, a threshold grasping transistor T4, a first reset transistor T5, a second light-emitting control transistor T6, a second reset transistor T7, a first capacitor C1, etc. The control terminals of the above transistors can be electrically connected to multiple scan lines 031 respectively. For details on the connection methods of the above transistors, capacitors, etc., with scan lines 031, data lines 032, power supply voltage signal lines PVDD, first reset lines Vref1, and second reset lines Vref2, please refer to [link to documentation]. Figure 8 This will not be elaborated upon here.

[0068] For example, the second thin-film transistor 030 includes any one or more of the following: driving transistor T1, data writing transistor T2, first light-emitting control transistor T3, threshold grabbing transistor T4, first reset transistor T5, second light-emitting control transistor T6, and second reset transistor T7.

[0069] In this embodiment of the invention, the second thin-film transistor 030 and the first thin-film transistor 110 are formed in the same process; specifically, the control electrode of the first thin-film transistor 110 and the control electrode of the second thin-film transistor 030 are formed in the same process. The semiconductor layers of the first thin-film transistor 110 and the second thin-film transistor 030 are formed in the same process. The source electrodes of the first thin-film transistor 110 and the second thin-film transistor 030 are formed in the same process. The drain electrodes of the first thin-film transistor 110 and the second thin-film transistor 030 are formed in the same process. Exemplarily, the above process includes steps such as film deposition, exposure, and development.

[0070] Optionally, the detection control branch L1b and the scan line 031 are formed in the same process, and the sensing branch L2b and the data line 032 are formed in the same process.

[0071] This setup allows the display panel to function as both a display panel and a temperature sensor without requiring additional manufacturing processes.

[0072] It should be noted that, Figure 8 The equivalent circuit diagram of sub-pixel 03 shown is only an illustration. In this embodiment of the invention, sub-pixel 03 can also be set to other structures according to different display requirements. This embodiment of the invention does not limit this.

[0073] Optional, such as Figure 7 As shown, the non-display area 02 also includes a data driving circuit 023 and a gate driving circuit 024.

[0074] The data driving circuit 023 can be electrically connected to the data line 032. The electrical signal output by the data driving circuit 023 can be transmitted to the circuit structure of the sub-pixel 03 through the data line 032 to participate in the light emission process of the sub-pixel 03.

[0075] In one embodiment of this application, the operation of the display panel 10 includes a display period and a temperature detection period, which are performed at different times.

[0076] During the temperature detection period, the temperature control circuit 022 controls the first thin-film transistor 110 to conduct, and the sensing circuit 021 detects the conduction current of the first thin-film transistor 110. The conduction current is related to the temperature of the temperature sensing area 11 where the first thin-film transistor 110 is located.

[0077] During the display period, the data driving circuit 023 adjusts the data voltage applied to the sub-pixel 03 according to the conduction current.

[0078] In this embodiment of the invention, during the temperature detection period, the temperature control circuit 022 controls the first thin-film transistor 110 to turn on. The first thin-film transistor 110 can then output a conduction current to the sensing circuit 021 via the sensing bus L2a. After detecting the conduction current, the sensing circuit 021 can generate a feedback signal to characterize the temperature change within the temperature sensing area 11. When the display panel 10 is in the display period, the data driving circuit 023 can adjust the data voltage it generates based on the feedback signal and transmit the adjusted data voltage to the sub-pixel 03 via the data line 032. This process can be considered as a compensation process for the light emission status of the sub-pixel 03. Specifically, after the characteristics of the second thin-film transistor in the display area 01 change due to temperature variations, this embodiment of the invention can provide a data voltage corresponding to the transistor after the characteristic change, thereby compensating for the light emission status of the sub-pixel 03 (which can be understood as adjusting the brightness of the sub-pixel 03), so that the brightness of the sub-pixel 03 can match the characteristics of the transistor after the change, thus helping to achieve brightness uniformity within the display area 01.

[0079] Based on the same inventive concept, embodiments of the present invention also provide a method for driving a display panel, combined with Figure 2 and Figure 9 As shown, Figure 9 This is a schematic flowchart illustrating a driving method for a display panel provided in this application. The display panel 10 includes a display area 01, which includes multiple sub-pixels 03 and multiple temperature sensing areas 11. The multiple temperature sensing areas 11 are arranged in an array within the display area 01. Each temperature sensing area 11 includes at least two first thin-film transistors 110. The at least two first thin-film transistors 110 in the same temperature sensing area 11 are connected in parallel, and the control electrode 110g and the first electrode 110d of the first thin-film transistors 110 are electrically connected.

[0080] like Figure 9 As shown, the driving method includes: Step S1: Provide detection and control signals to the control electrode 110g and the first electrode 110d of the first thin film transistor 110.

[0081] like Figure 2As shown, when the control electrode 110g and the first electrode 110d of the first thin-film transistor 110 are electrically connected, the detection control bus L1a can simultaneously transmit detection control signals to both the control electrode 110g and the first electrode 110d. The detection control signals can be used to control the first thin-film transistor 110 to turn on, and the first thin-film transistor 110 can generate temperature sensing data (such as conduction current) based on the detection control signals received by its first electrode 110d.

[0082] Step S2: Detect the conduction current of the first thin film transistor 110. The conduction current is related to the temperature of the temperature sensing area 11 where the first thin film transistor 110 is located.

[0083] The conduction current can pass through Figure 2 The sensing bus L2a shown transmits to the sensing circuit 021. After detecting the conduction current, the sensing circuit 021 generates a feedback signal that can characterize the temperature change of the temperature sensing area 11.

[0084] Step S3: Adjust the data voltage applied to sub-pixel 03 according to the conduction current.

[0085] In this embodiment of the invention, at least two first thin-film transistors 110 are disposed within the same temperature sensing region 11. These at least two first thin-film transistors 110 are connected in parallel within the same temperature sensing region 11. During temperature detection, the sum of the conduction currents of the at least two first thin-film transistors 110 within the same temperature sensing region 11 can be used as the temperature detection data output for that temperature sensing region 11. Compared to disposing of only one first thin-film transistor 110 within the temperature sensing region 11, the arrangement provided in this embodiment of the invention can reduce the impact of process fluctuations in the fabrication of the first thin-film transistor 110 on the accuracy of temperature detection. It can better resist process fluctuations during the fabrication of the first thin-film transistor 110, thus improving the accuracy of temperature detection within the temperature sensing region 11.

[0086] Furthermore, combined Figure 2 and Figure 3In this embodiment of the invention, the control electrode 110g and the first electrode 110d of the first thin-film transistor 110 are electrically connected. That is, the first electrode 110d and the control electrode 110g receive the same electrical signal. This arrangement allows for simultaneous electrical connection of the first electrode 110d and the control electrode 110g using the same trace, which helps reduce the number of traces in the display area 01, thereby reducing the space occupied by the traces in the display area 01 and leaving more space for sub-pixels. This, in turn, helps increase the number of pixels per inch (PPI) in the display area 01. Furthermore, this arrangement also allows for the use of the same circuit to connect to both the first electrode 110d and the control electrode 110g to provide the necessary signals, without requiring separate circuits for each. This further simplifies the structure of the display panel and reduces the space occupied by the circuits providing signals to the first electrode 110d and the control electrode 110g.

[0087] In addition, Figure 7 With the participation of the data driving circuit 023 shown, combined with the aforementioned feedback signal that can reflect temperature, the magnitude of the data voltage transmitted to the sub-pixel 03 via the data line 032 can be adjusted to adjust the light emission state of the sub-pixel 03. Specifically, after the characteristics of the second thin-film transistor in the display area 01 change due to temperature variations, this embodiment of the invention can provide a data voltage corresponding to the transistor after the characteristic change, thereby compensating for the light emission state of the sub-pixel 03 (which can be understood as adjusting the brightness of the sub-pixel 03), so that the brightness of the sub-pixel 03 can match the changed transistor characteristics, thereby helping to achieve brightness uniformity within the display area 01.

[0088] Based on the same inventive concept, embodiments of the present invention also provide a display device, such as... Figure 10 As shown, Figure 10 This is a schematic diagram of a display device provided in this application. The display device 20 includes the aforementioned display panel 10. The specific structure of the display panel 10 has been described in detail in the above embodiments and will not be repeated here. Of course, Figure 10 The display device shown is for illustrative purposes only. The display device can be any electronic device with display function, such as a mobile phone, tablet computer, laptop computer, e-reader, in-vehicle display, or television.

[0089] The display device 20 provided in this embodiment of the invention provides a temperature sensing area in the display area of ​​the display panel 10, and a first thin-film transistor in the temperature sensing area. The temperature change in the temperature sensing area can be obtained according to the conduction current generated by the first thin-film transistor. That is, the first thin-film transistor participates in the temperature detection of the display area, which helps to improve the accuracy of temperature detection in the display area.

[0090] Furthermore, in this embodiment of the invention, at least two first thin-film transistors are disposed within the same temperature sensing region, and these at least two first thin-film transistors within the same temperature sensing region are connected in parallel. During temperature detection, the sum of the conduction currents of the at least two first thin-film transistors within the same temperature sensing region can be used as the temperature detection data output for that temperature sensing region. Compared to the method of disposing of only one first thin-film transistor within the temperature sensing region, the arrangement provided in this embodiment of the invention can reduce the impact of fluctuations in the fabrication process of the first thin-film transistor on the accuracy of temperature detection, better resist the process fluctuations during the fabrication of the first thin-film transistor, and thus improve the accuracy of temperature detection within the temperature sensing region.

[0091] Furthermore, in this embodiment of the invention, the control electrode and the first electrode of the first thin-film transistor are electrically connected. This can be achieved by using the same trace to simultaneously connect the first electrode and the control electrode, which helps reduce the number of traces in the display area, thereby reducing the space occupied by the traces and leaving more space for sub-pixels. This, in turn, helps increase the number of pixels per inch (PPI) in the display area. In addition, using this configuration, the same circuit can be used to connect to both the first electrode and the control electrode separately to provide the necessary signals, without needing to set up separate circuits for the first electrode and the control electrode. This further simplifies the structure of the display panel and reduces the space occupied by the circuits providing signals to the first electrode and the control electrode.

[0092] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

[0093] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that, Includes a display area; the display area includes multiple temperature sensing areas, which are arranged in an array within the display area; The same temperature sensing region includes at least two first thin-film transistors, and the at least two first thin-film transistors in the same temperature sensing region are connected in parallel; Furthermore, the control electrode and the first electrode of the first thin-film transistor are electrically connected.

2. The display panel according to claim 1, characterized in that, The plurality of temperature sensing areas are arranged in an array along a first direction and a second direction; the first direction and the second direction intersect. The gates of the first thin-film transistors in two adjacent temperature sensing regions in the first direction are electrically connected; The second electrodes of the first thin-film transistors in two adjacent temperature sensing regions in the first direction are mutually insulated. The gates of the first thin-film transistors in two adjacent temperature sensing regions in the second direction receive different detection control signals; The second electrodes of the first thin-film transistors in two adjacent temperature sensing regions in the second direction are electrically connected.

3. The display panel according to claim 2, characterized in that, The non-display area of ​​the display panel includes at least two sensing buses; the same sensing bus is electrically connected to the second electrode of the first thin film transistor in two adjacent temperature sensing areas in the second direction, and different sensing buses are electrically connected to the second electrode of the first thin film transistor in different temperature sensing areas arranged in the first direction; The non-display area includes at least two detection control buses; the same detection control bus is electrically connected to the control electrode of the first thin film transistor in two adjacent temperature sensing areas in the first direction, and different detection control buses are electrically connected to the control electrode of the first thin film transistor in different temperature sensing areas arranged in the second direction.

4. The display panel according to claim 2, characterized in that, Along the second direction, the first thin-film transistors in different temperature sensing regions are turned on sequentially.

5. The display panel according to claim 1, characterized in that, The first thin-film transistor includes an oxide thin-film transistor.

6. The display panel according to claim 5, characterized in that, The gate of the first thin-film transistor receives a detection control signal, which is a pulse signal that switches between an enable level and an disable level. The enable level is used to control the first thin-film transistor to turn on, and the disable level is used to control the first thin-film transistor to turn off. The enable level is V1, and the disable level is V2; The second electrode of the first thin-film transistor receives a third voltage level, which is Vs. Where V1-Vs<|V2-Vs|.

7. The display panel according to claim 1, characterized in that, The display area also includes a detection control branch and a sensing branch; The detection and control branch extends along a first direction, and the detection and control branch is electrically connected to the control electrode and the first electrode of a plurality of first thin-film transistors arranged along the first direction. The sensing branch extends along the second direction, and the sensing branch is electrically connected to the second electrode of a plurality of the first thin-film transistors arranged along the second direction; the first direction and the second direction intersect.

8. The display panel according to claim 7, characterized in that, The display area further includes sub-pixels, and the sub-pixels include second thin-film transistors; The display area also includes scan lines and data lines, both of which are electrically connected to the second thin-film transistor; The second thin-film transistor and the first thin-film transistor are formed in the same process; The detection control branch line and the scanning line are formed in the same process; The sensing branch and the data line are formed in the same process.

9. The display panel according to claim 1, characterized in that, It also includes a non-display area, which includes a temperature control circuit and a sensing circuit. The temperature control circuit is electrically connected to the control electrode of the first thin-film transistor, and the sensing circuit is electrically connected to the second electrode of the first thin-film transistor.

10. The display panel according to claim 9, characterized in that, The operation of the display panel includes a display period and a temperature detection period; the display period and the temperature detection period are performed at different times. The display area further includes sub-pixels; the non-display area further includes a data driving circuit. During the temperature detection period, the temperature control circuit controls the first thin-film transistor to turn on, and the sensing circuit detects the conduction current of the first thin-film transistor. The conduction current is related to the temperature of the temperature sensing area where the first thin-film transistor is located. During the display period, the data driving circuit adjusts the data voltage applied to the sub-pixel according to the conduction current.

11. A driving method for a display panel, characterized in that, The display panel includes a display area; the display area includes multiple sub-pixels and multiple temperature sensing areas, and the multiple temperature sensing areas are arranged in an array in the display area. The same temperature sensing region includes at least two first thin-film transistors, and the at least two first thin-film transistors in the same temperature sensing region are connected in parallel; Furthermore, the control electrode and the first electrode of the first thin-film transistor are electrically connected; The driving method includes: Provide detection control signals to the control electrode and the first electrode of the first thin-film transistor; The conduction current of the first thin-film transistor is detected; the conduction current is related to the temperature of the temperature sensing area where the first thin-film transistor is located. The data voltage applied to the sub-pixel is adjusted according to the conduction current.

12. A display device, characterized in that, Includes the display panel as described in any one of claims 1-10.

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