Power supply module with nanosecond high-speed flash function and control method
By employing nanosecond-level switching technology with PMOS transistors and control circuits, combined with a 4-line linear dimming circuit and an LLC resonant circuit, the problem of insufficient flash response speed in existing power modules has been solved. This enables nanosecond-level switching and flash control between white light and ultraviolet light, making it suitable for high-speed photography and precision inspection.
Patent Information
- Application Number
- CN202610092668.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-01-23
- Publication Date
- 2026-02-24
AI Technical Summary
Existing white-violet dual-light power modules are insufficient in flash response speed, which cannot meet the needs of high-speed photography. They are also susceptible to electromagnetic interference and unstable energy supply, resulting in flash brightness fluctuations and low pulse width accuracy.
Using PMOS transistors as switches, nanosecond-level channel switching is achieved through GPIO interrupt response. Combined with a 4-line linear dimming circuit and an LLC resonant circuit, and with the control circuit, the PWM duty cycle and resonant frequency are adjusted in real time to achieve nanosecond-level switching and flash control between white light and ultraviolet light.
It achieves nanosecond-level switching between white light and ultraviolet light and flash control, meeting the instantaneous high-intensity light capture requirements of high-speed photography. The brightness is stable and without fluctuation, making it suitable for high-speed photography and precision inspection scenarios.
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Figure CN121568258A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of power control technology, specifically relating to a power module and control method with nanosecond-level high-speed flash function. It supports dual-channel switching of white light / violet light and can realize nanosecond-level high-speed flash function, which is suitable for scenarios with extremely high requirements for flash response speed, such as high-speed photography, precision detection, and special lighting. Background Technology
[0002] Existing dual-light white / violet power modules have significant shortcomings in flash response speed: traditional power supplies typically have flash pulse widths exceeding microseconds and suffer from large switching delays, failing to meet the demands of capturing instantaneous intense light in high-speed photography. Furthermore, high-speed flashes under high current output are susceptible to electromagnetic interference and unstable energy supply, resulting in fluctuations in flash brightness and low pulse width accuracy. In addition, while some power modules support flash functionality, they lack circuit optimizations for high-speed switching, reducing reliability. Summary of the Invention
[0003] To address the problems existing in the prior art, this application proposes a power module and control method with nanosecond-level high-speed flash function, which can realize nanosecond-level switching between white light and ultraviolet light dual channels and realize nanosecond-level flash control of white light or ultraviolet light.
[0004] This application is achieved through the following technical solution:
[0005] A power module with nanosecond-level high-speed flash capability includes:
[0006] The AC power supply section is used to provide a stable and reliable AC power to the subsequent AC-DC conversion section;
[0007] The AC / DC conversion section is used to convert the input AC power into a stable and adjustable isolated output voltage to provide power to the subsequent circuits while achieving electrical isolation between the primary and secondary sides.
[0008] The light switching circuit is used to control the selection of the output channels for white light and ultraviolet light;
[0009] The dimming section is used to achieve constant current output control and PWM dimming control for white light or ultraviolet light;
[0010] Furthermore, the control circuit responds to the channel switching command from the host computer via GPIO interrupts to control the switching of the light switching circuit, achieving nanosecond-level switching between white light and ultraviolet light channels. Simultaneously, it triggers the PWM signal via a timer hardware to control the dimming section, achieving nanosecond-level flash control of white light or ultraviolet light. The control circuit also collects flash current and temperature data in real time, updates the control parameters once according to a preset cycle, and dynamically adjusts the PWM duty cycle and the resonant frequency of the AC / DC conversion section.
[0011] In some implementations, the optical switching circuit uses a PMOS transistor as a switch directly integrated into the output positive circuit, and is directly driven by the control circuit through the GPIO pin to achieve nanosecond-level switching between the white light and ultraviolet light channels. The on-resistance of the PMOS transistor is less than or equal to 10mΩ, and the switching delay time is less than or equal to 50ns.
[0012] In some implementations, the dimming section uses four linear dimming circuits connected in parallel to the output negative circuit. The four linear dimming circuits together achieve a total current output of 15A. Each linear dimming circuit is constructed using a linear LED controller and an NMOS transistor, wherein the gate charge of the NMOS transistor is less than or equal to 15nC and the switching frequency supports 10kHz or higher.
[0013] The linear LED controller uses a BCR602 chip, which supports a maximum PWM dimming frequency of 3.5KHz, a minimum duty cycle of 1%, and a minimum lighting pulse width of 2.9μs, meeting the minimum lighting pulse width requirement of 50μs. Through optimization of the external driving circuit, the flash pulse width can be reduced to the nanosecond level.
[0014] In some implementations, it also includes:
[0015] The auxiliary power supply adopts a flyback scheme and provides 12V and 5V auxiliary voltages. The two auxiliary voltages are isolated from each other and supply power to the control circuit and the dimming section.
[0016] And / or, an output current detection module is provided on the output side of the AC / DC conversion section to detect the output current and transmit it to the control circuit and feed it back to the input side of the AC / DC conversion section.
[0017] In some embodiments, the AC power supply section includes an EMI circuit, a rectifier filter circuit, and a surge suppression circuit;
[0018] The AC power supply passes through the EMI circuit, rectifier and filter circuit and surge suppression circuit in sequence to provide AC power to the AC-DC conversion section in the next stage.
[0019] The EMI circuit adopts an EMI filter circuit architecture, which consists of three common-mode inductors and three X capacitors to form a three-stage EMI filter circuit. At the same time, a Y capacitor is grounded, which attenuates interference of 10kHz~10MHz by ≥40dB, ensuring the stability of power input during high-frequency flash. A varistor is connected in parallel at the input to absorb surge spikes on the AC line.
[0020] The rectifier and filter circuit adopts a full-bridge rectifier circuit architecture.
[0021] The surge suppression circuit adopts an active surge current protection circuit, which uses a power resistor and MOSFET cooling method. At the moment of power-on, the high resistance value of the power resistor is used to suppress the surge current, ensuring that the start-up current does not exceed 2.5 times the rated current. After a delay, when the surge current ends, the MOSFET is driven to conduct through the control signal, short-circuiting the two ends of the power resistor, thereby reducing the power consumption of the power resistor.
[0022] In some embodiments, the AC / DC conversion section includes a PFC circuit and an LLC resonant half-bridge circuit;
[0023] The PFC circuit uses a Boost power factor correction circuit to convert the input single-phase AC power into a stable high-voltage DC voltage. The LLC resonant half-bridge circuit converts the high-voltage DC voltage into a stable and adjustable isolated output voltage to provide power to the subsequent circuits while achieving electrical isolation between the primary and secondary sides.
[0024] In some implementations, the PFC circuit incorporates a dynamic voltage regulation algorithm to automatically adjust the output bus voltage in the AC / DC conversion section according to the duty cycle of the flash mode, reduce the bus voltage during the flash interval to reduce standby power consumption, and quickly return to the desired voltage when the flash starts.
[0025] The control circuit incorporates a frequency adaptive algorithm to automatically adjust the resonant frequency of the LLC resonant half-bridge circuit based on the load current.
[0026] On the other hand, this application also proposes a control method for a power module with nanosecond-level high-speed flash function based on any of the above embodiments, including:
[0027] A three-level interrupt response mechanism is adopted: Level 1, GPIO hardware interrupt directly controls the switching between white light and ultraviolet light channels, i.e., triggers the flash enable signal; Level 2, timer interrupt controls PWM pulse width generation, ensuring nanosecond-level stepping of pulse width adjustment from 25μs to 500ms; Level 3, USART communication interrupt enables real-time parsing and execution of host computer instructions.
[0028] The time base signal is generated by the timer of the control circuit, with a minimum interval time of less than or equal to 100100μs and dynamic adjustment is supported: a preload register mechanism is adopted to ensure that the pulse width and interval parameters are updated without delay.
[0029] By combining hardware synchronization trigger signals, nanosecond-level synchronous flashing between multiple modules is achieved, and the turn-on / turn-off dead time of the MOSFETs is automatically set according to the flashing frequency. The dead time is reduced during high-frequency flashing to reduce duty cycle loss, and the dead time is increased during low-frequency flashing to avoid shoot-through between the upper and lower MOSFETs.
[0030] In some embodiments, the control method further includes:
[0031] The control circuit uses a built-in ADC module to collect the output current at a sampling rate of 100,000 times per second, calculates the rate of change of the current, and immediately triggers a soft shutdown when the rate of change of the current exceeds a threshold.
[0032] Temperature is monitored in real time by temperature sensors installed in the optical switching circuit and the output terminal of the optical module. When the temperature exceeds the threshold, the flash peak current is automatically reduced until the temperature loop recovers to below the expected value.
[0033] By statistically analyzing historical data, a loss model is established to predict the lifespan of the devices in the power module. When the predicted remaining lifespan of a certain device reaches a threshold, an early warning signal is sent to the host computer through the communication interface to update the data in advance.
[0034] In some embodiments, the control method further includes:
[0035] Upon initial power-on, the current-voltage characteristics of the white light and ultraviolet light modules are automatically detected, generating personalized current-voltage curves.
[0036] In flash mode, the output voltage is dynamically adjusted to ensure that the voltage drop of the MOSFET is stable at the threshold, thereby reducing power consumption fluctuations.
[0037] When continuous high-frequency flashes are detected, the intermittent buffer mode is automatically activated.
[0038] This application proposes a power module and control method with nanosecond-level high-speed flash functionality. Through PMOS high-speed switching and hardware PWM triggering, a minimum pulse width of 50ns and a dual-light switching delay of ≤100ns are achieved, meeting the needs of high-speed photography, precision inspection, and other scenarios for capturing instantaneous intense light. A four-channel parallel dimming circuit supports a maximum output current of 15A, and combined with the efficient energy supply of the LLC resonant circuit, ensures stable brightness during nanosecond-level flashes without attenuation or fluctuation. The PMOS transistor is directly driven via the MCU's GPIO hardware interrupt, enabling nanosecond-level switching between white and ultraviolet light channels. The flash pulse width and interval can be precisely adjusted (50ns~500ms), adapting to diverse application scenarios. Attached Figure Description
[0039] The accompanying drawings, which are included to provide a further understanding of the embodiments of this application and form part of this application, do not constitute a limitation on the embodiments of this application. In the drawings:
[0040] Figure 1 This is a schematic block diagram of the power module proposed in the embodiments of this application;
[0041] Figure 2 This is a schematic diagram of the optical switching circuit according to an embodiment of this application;
[0042] Figure 3 This is a schematic diagram of a linear dimming circuit according to an embodiment of this application;
[0043] Figure 4 This is a schematic diagram of a 4-line linear dimming circuit in a specific application of this application.
[0044] Figure 5 This is a schematic diagram of the auxiliary power supply circuit according to an embodiment of this application;
[0045] Figure 6 This is a schematic diagram of the control circuit according to an embodiment of this application;
[0046] Figure 7 This is a schematic diagram of the EMI circuit according to an embodiment of this application;
[0047] Figure 8 This is a schematic diagram of the surge suppression circuit according to an embodiment of this application;
[0048] Figure 9 This is a schematic diagram of the PFC circuit according to an embodiment of this application;
[0049] Figure 10 This is a schematic diagram of an LLC resonant half-bridge circuit according to an embodiment of this application. Detailed Implementation
[0050] In the following, the terms “comprising” or “may include” as used in the various embodiments of this application indicate the presence of a function, operation, or element of the invention and do not limit the addition of one or more functions, operations, or elements. Furthermore, as used in the various embodiments of this application, the terms “comprising,” “having,” and their cognates are intended only to indicate a specific feature, number, step, operation, element, component, or combination of the foregoing and should not be construed as primarily excluding the presence of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing, or adding one or more combinations of the foregoing.
[0051] In various embodiments of this application, the expression "or" or "at least one of A and / or B" includes any combination or all combinations of the words listed simultaneously. For example, the expression "A or B" or "at least one of A and / or B" may include A, may include B, or may include both A and B.
[0052] The terms used in the various embodiments of this application (such as "first," "second," etc.) may modify various constituent elements in the various embodiments, but do not limit the corresponding constituent elements. For example, the above terms do not limit the order and / or importance of the elements. The above terms are only used for the purpose of distinguishing one element from other elements. For example, a first user device and a second user device refer to different user devices, although both are user devices. For example, without departing from the scope of the various embodiments of this application, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.
[0053] It should be noted that if a description is made of "connecting" one component to another, then the first component can be directly connected to the second component, and a third component can be "connected" between the first and second components. Conversely, when a component is "directly connected" to another component, it can be understood that there is no third component between the first and second components.
[0054] The terminology used in the various embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the various embodiments of this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of this application pertain. The terms (such as those defined in a generally used dictionary) are to be interpreted as having the same meaning as in the context of the relevant technical field and are not to be interpreted as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of this application.
[0055] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the embodiments and accompanying drawings. The illustrative embodiments and descriptions of this application are only for explaining this application and are not intended to limit this application.
[0056] This application proposes a power module with nanosecond-level high-speed flash function, including: an AC power supply section, an AC-DC conversion section, an optical switching circuit, a dimming section, and a control circuit.
[0057] The AC power supply section mainly includes an EMI circuit, a rectifier and filter circuit, and a surge suppression circuit. The AC power supply passes through the EMI circuit, the rectifier and filter circuit, and the surge suppression circuit in sequence to provide a stable and reliable AC power to the subsequent AC-DC conversion section.
[0058] The AC / DC conversion section mainly includes a PFC circuit (Power Factor Correction circuit), an LLC resonant half-bridge circuit, and a Vo-BUS rectifier and filter circuit. The front-end PFC circuit uses a Boost power factor correction circuit to convert the input single-phase 90V~350V (50Hz) AC power into a stable 450V DC voltage. The rear-end LLC resonant half-bridge circuit converts the 450V DC voltage into a stable and adjustable isolated output voltage to power the subsequent circuit (Vo-BUS rectifier and filter circuit) while simultaneously achieving electrical isolation between the primary and secondary sides. The rectified output of the Vo-BUS rectifier and filter circuit then controls the output channel selection for white light or ultraviolet light through a light switching circuit. Finally, the dimming section implements constant current output control and PWM dimming control, thereby achieving brightness adjustment and flashing functions for both white and ultraviolet light. Both the dimming section and the light switching circuit are controlled by a control circuit.
[0059] Furthermore, the dimming section mainly includes a 4-line linear dimming circuit, which is shared by the white light or ultraviolet light output channels. Specifically, the light switching circuit controls the positive terminal of the white light or ultraviolet light output channel, and the output of the 4-line linear dimming circuit is connected in parallel to the negative terminal of the white light or ultraviolet light output channel. Specifically, the light switching circuit is used to enable different lights to work alternately, without operating simultaneously. Figure 2 A white light switching circuit is presented. It should be noted that the structure of the purple light switching circuit is identical to that of the white light switching circuit, and therefore it is not shown in the figure. It uses a MOSFET as a switch to power either white or purple light. Preferably, a PMOS transistor with low on-resistance (≤10mΩ) (e.g., AO4407) can be used as the switch, with a switching delay time of less than or equal to 50ns, ensuring a fast response speed for white / purple light channel switching. This switch (Q201) is directly integrated into the output positive circuit as a high-side switch and is directly driven by the control circuit through a GPIO pin, achieving nanosecond-level switching of the white / purple light channels (switching delay less than or equal to 100ns), without the need for an additional auxiliary power supply, simplifying the control chain and further shortening the response time. The linear dimming circuit outputs a maximum current of 15A and has multiple operating modes such as constant light and flashing. The linear dimming circuit must simultaneously have both analog dimming and PWM dimming functions. Analog dimming controls the brightness of the LED by adjusting the output current, while PWM dimming controls the flashing of the white / purple light by controlling the on / off state of the control circuit. Based on this application requirement, the BCR602 chip is preferred in the embodiments of this application. This chip is a linear LED controller, which, together with an NMOS transistor, constructs a linear dimming circuit, such as... Figure 3As shown. The NMOS in the linear dimming circuit is preferably from the OptiMOS series (such as BSZ092N10NS5), with a gate charge (Qg) ≤15nC and a switching frequency supporting frequencies above 10kHz, meeting the requirements of high-frequency flashing. Compared to the DC-DC Buck IC solution, this controller has advantages such as higher integration, lower BOM cost, and longer LED lifespan. In practical applications, due to the power consumption limitations of the linear power MOSFET, the maximum output current of a single channel cannot meet the 15A requirement. Considering factors such as MOSFET selection, power consumption, and heat dissipation, this embodiment uses a parallel connection of four linear dimming circuits. Each channel only needs to provide a current output capability of 3.75A, and the four channels together achieve a total current of 15A. Figure 4 As shown, the switching stress of single-channel devices is reduced to ensure current stability during high-frequency switching. The output current of the white / purple light is controlled by analog dimming. This chip supports a continuous dimming range of 3%-100%. The power module of this embodiment has a maximum output power of 300W, and theoretically can support 9W-300W continuously adjustable. The on / off state of the white / purple light is controlled by PWM dimming. This BCR602 chip supports a maximum PWM dimming frequency of 3.5KHz and a minimum duty cycle of 1%. According to this specification, the minimum on-state pulse width can support 2.9μs, meeting the minimum on-state pulse width requirement of 50μs. Through optimization of the external drive circuit (such as matching the gate resistor to 10Ω), the pulse width can be further compressed to the nanosecond level, and the minimum flash pulse width can be down to the nanosecond level (theoretically supporting 50ns~500ms continuously adjustable).
[0060] Furthermore, the power module in this embodiment also includes an auxiliary power supply, which provides an auxiliary voltage to power the control circuit and the dimming section, and the PFC circuit output powers the auxiliary power supply. Specifically, as shown... Figure 5 As shown, the auxiliary power supply uses a flyback design, providing 12V and 5V auxiliary voltages, which are isolated from each other, meeting the AC1500V isolation strength. This provides low-noise power to the dimming and control circuits, preventing power fluctuations from affecting high-speed signals. This application preferably uses the PN8777 chip, which integrates a PFM controller and a 750V high avalanche capability intelligent power MOSFET for high-performance AC / DC conversion switching power supplies with simple external components. The PN8777 chip has a built-in 750V high-voltage startup and self-powering module, enabling rapid system startup, standby, and self-powering functions. The chip provides complete intelligent protection functions, including overcurrent protection, overload protection, undervoltage protection, and overtemperature protection. Furthermore, the PN8777 chip's down-modulation technology contributes to EMI characteristics.
[0061] Furthermore, the power module in this embodiment of the application also includes an output current detection module, which is used to detect the output current of the power module and transmit it to the control circuit and the LLC resonant half-bridge circuit.
[0062] Furthermore, the control circuit samples the output current, voltage drop and temperature of the light switching circuit in real time to monitor the power supply's operating status. It communicates with the host computer in full-duplex mode to control and report the power supply's operating status, as well as perform GPIO control functions. Specifically, the main control MCU of this control circuit preferably uses a GD32F103CBT6 microcontroller, employing a timer hardware-triggered PWM signal with a time base accuracy of 1ns, allowing for precise setting of the flash pulse width (50ns~500ms) and flash interval (minimum interval ≤100ns). Through a pre-stored dimming curve (based on measured current-voltage relationships), the output current is calibrated in real time to ensure brightness consistency at nanosecond-level pulse widths. The main control MCU responds to channel switching commands from the host computer via GPIO interrupts, with an interrupt processing delay of <50ns. Combined with the high-speed switching characteristics of the PMOS transistor, seamless switching between white light and ultraviolet light channels is achieved without energy leakage during switching, preventing flash interruption. The main control MCU collects current (via the IMON pin) and temperature (NST1001 sensor) data in real time, updating control parameters every 10ns and dynamically adjusting the PWM duty cycle and LLC resonant frequency to ensure energy stability during nanosecond-level flashes. The main control MCU and its peripheral circuits are as follows: Figure 6 As shown.
[0063] Specifically, such as Figure 7 As shown, the EMI circuit adopts the EMI filter circuit architecture of similar power supply modules. It can be composed of three common-mode inductors and three X capacitors to form a three-stage EMI filter circuit. A Y capacitor is grounded, resulting in an attenuation of ≥40dB for interference from 10kHz to 10MHz, ensuring power input stability during high-frequency flickering. A varistor is connected in parallel at the EMI circuit input to absorb surge spikes on the AC line, improving the power supply's surge immunity.
[0064] Specifically, the rectifier and filter circuit can be designed using the existing full-bridge rectifier circuit architecture, which will not be elaborated here.
[0065] Specifically, such as Figure 8As shown, the surge suppression circuit employs an active surge current protection circuit, using a power resistor and a MOSFET connected in parallel. At power-on, the high resistance of the power resistor suppresses the surge current, ensuring that the startup current does not exceed 2.5 times the rated current. After a delay, once the surge current has subsided, a control signal drives the MOSFET to conduct, short-circuiting the power resistor and reducing its power consumption. The input surge current can be adjusted by changing the resistance value. Furthermore, the control module monitors the surge current during flash startup in real time based on the output current detection module. When the detected surge current exceeds 2.5 times the rated current, the MCU quickly adjusts the MOSFET switching time to suppress the surge to within 2 times the rated current.
[0066] Specifically, such as Figure 9 As shown, the PFC circuit employs an active power factor correction (PFC) circuit to improve its power factor, reduce input harmonic components, and minimize interference with the power grid. Since the maximum output power of this power module is approximately 300W, and the total harmonic distortion (THD) of the current is required to be no more than 6%, the NCL2801 chip (U102) is used. This chip is a current-mode CRM boost PFC control integrated circuit suitable for optimized lighting product design. It utilizes THD enhancement technology to provide optimal THD performance over a wider operating range, and energy efficiency and standby power performance are enhanced through valley count frequency foldback (VCFF). Furthermore, this PFC circuit introduces a dynamic voltage regulation algorithm, automatically adjusting the output bus voltage according to the duty cycle of the flash mode. During the flash interval, the bus voltage is reduced to 400V to reduce standby power consumption; during flash startup, it quickly echoes back to 450V to ensure stable output current.
[0067] Specifically, such as Figure 10As shown, the LLC resonant half-bridge circuit uses the NCP13992 chip (U105) to implement the LLC resonant topology. This chip is a high-performance current-mode controller for half-bridge resonant converters, implementing a 600V gate driver. Its built-in undervoltage input function simplifies implementation in applications where this controller is used. In applications requiring a PFC pre-amplifier, the NCP13992 chip has a dedicated output to drive the PFC controller. This feature, combined with a dedicated noiseless skip mode technology, further improves the overall light-load energy efficiency of the application. The NCP13992 chip provides a suite of protection functions to ensure safe operation in any application, including: overload protection, overcurrent protection with hard switching cycles, undervoltage detection, open-circuit optocoupler detection, automatic stall time adjustment, and overvoltage and overtemperature protection. Furthermore, the control circuit introduces a frequency adaptive algorithm to automatically adjust the resonant frequency based on the real-time detected current (real-time current of the white / UV light channels), achieving a conversion efficiency of over 95% and ensuring stable instantaneous energy supply during nanosecond-level flashes. The secondary side adopts synchronous rectification technology to reduce the reverse recovery time of the freewheeling diode in the LLC resonant half-bridge circuit (≤50ns) and avoid voltage spike interference during high-frequency switching.
[0068] Preferably, the freewheeling diode is an ultrafast recovery diode (such as STTH606), with a reverse recovery time ≤35ns, suppressing reverse surges during rapid current switching. A discharge tube and varistor combination is set at the AC input terminal of the LLC resonant half-bridge circuit as an input protection circuit. TVS diodes (response time <1ns) are connected in series within each module to prevent instantaneous overvoltage damage to valuable components (such as the BCR602 controller and MOSFETs) during high-frequency flashing. Simultaneously, the control circuit monitors the output current in real time (via the output current detection circuit IC-SGM8199A2). If an abnormality is detected, the flash output can be cut off within 100ns, achieving rapid protection.
[0069] The working principle of the power module proposed in this application embodiment is as follows: the switching of different optical channels is realized by controlling the optical switching circuit through GPIO interrupt, and the output current is adjusted by triggering the 4-line linear dimming circuit through hardware PWM to realize the flash control of light-changing / ultraviolet light.
[0070] The power module proposed in this application achieves a minimum pulse width of 50ns and a dual-light switching delay of ≤100ns through PMOS high-speed switching and hardware PWM triggering, meeting the needs of high-speed photography, precision inspection, and other scenarios for capturing instantaneous strong light. The four-channel parallel dimming circuit supports a maximum output current of 15A, and combined with the efficient energy supply of the LLC resonant circuit, ensures stable brightness during nanosecond-level flashes without attenuation or fluctuation. The PMOS transistor is directly driven by the MCU's GPIO hardware interrupt, enabling nanosecond-level switching between white light and ultraviolet light channels. The flash pulse width and interval can be precisely adjusted (50ns~500ms), adapting to diverse application scenarios.
[0071] Furthermore, this application embodiment also proposes a control method applied to the above-mentioned power module, the method comprising:
[0072] Flashing timing control algorithm: A three-level interrupt response mechanism is adopted: Level 1, GPIO hardware interrupt (response time ≤ 10ns), directly triggers the flashing enable signal; Level 2, timer interrupt (precision 10ns), controls PWM pulse width generation, ensuring nanosecond-level stepping of pulse width adjustment from 25μs to 500ms; Level 3, USART communication interrupt (baud rate 115200), realizes real-time parsing and execution of host computer instructions, with instruction processing latency ≤ 100μs. A high-precision time base signal is generated through the MCU timer (TIM1), with a minimum interval time less than or equal to 100μs, and supports dynamic adjustment: a preload register mechanism ensures no delay in updating pulse width and interval parameters; combined with the hardware synchronization trigger signal (GPIO1), nanosecond-level synchronized flashing between multiple modules is achieved. The on / off dead time (50ns~200ns) of the MOSFET (optical switching switch) is automatically set according to the flash frequency. During high-frequency flashes (such as 10kHz), the dead time is reduced (e.g., 50ns) to reduce duty cycle loss, while during low-frequency flashes, the dead time is increased (e.g., 200ns) to avoid shoot-through between the upper and lower transistors.
[0073] Real-time status monitoring and protection algorithm: The output current is sampled at a rate of 100,000 times per second by the MCU's ADC. The current change rate is calculated. When the current change rate exceeds a threshold, a soft shutdown is immediately triggered (the current is linearly reduced within 10μs, i.e., software shutdown without complete switch shutdown), avoiding device breakdown caused by sudden current changes. NTC temperature sensors are set at the output terminals of MOSFET (optical switching switch) and LED (optical module) to monitor the temperature in real time (sampling rate 1kHz). When the temperature exceeds a threshold (e.g., 65℃), the peak flash current is automatically reduced (from 15A to 12A) until the temperature returns to the desired value (below 55℃) to prevent device aging caused by heat accumulation. By statistically analyzing historical data (such as flash count, average current, peak temperature, etc.), a loss model is established to predict the lifespan of devices in the power module. When the predicted lifespan of a device (e.g., MOSFET) is 10%, a warning signal is sent to the host computer via the communication interface for early update.
[0074] Adaptive load regulation algorithm: Upon initial power-up, the volt-ampere characteristics of the white / UV LED are automatically detected, generating a personalized current-voltage curve. In flash mode, the output voltage is dynamically adjusted to ensure that the voltage drop of the MOSFET (optical switching switch) remains stable at 1.5V, reducing power consumption fluctuations. When continuous high-frequency flashes (e.g., above 1kHz, lasting 10s) are detected, an intermittent buffer mode is automatically activated, inserting a 100μs buffer interval every 100 flashes to reduce fatigue accumulation from continuous switching of the device.
[0075] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of this application. It should be understood that the above description is only a specific embodiment of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.
Claims
1. A power module with nanosecond-level high-speed flash capability, characterized in that, include: The AC power supply section is used to provide a stable and reliable AC power to the subsequent AC-DC conversion section; The AC / DC conversion section is used to convert the input AC power into a stable and adjustable isolated output voltage to provide power to the subsequent circuits while achieving electrical isolation between the primary and secondary sides. The light switching circuit is used to control the selection of the output channels for white light and ultraviolet light; The dimming section is used to achieve constant current output control and PWM dimming control for white light or ultraviolet light; Furthermore, the control circuit responds to the channel switching command from the host computer via GPIO interrupts to control the switching of the light switching circuit, achieving nanosecond-level switching between white light and ultraviolet light channels. Simultaneously, it triggers the PWM signal via a timer hardware to control the dimming section, achieving nanosecond-level flash control of white light or ultraviolet light. The control circuit also collects flash current and temperature data in real time, updates the control parameters once according to a preset cycle, and dynamically adjusts the PWM duty cycle and the resonant frequency of the AC / DC conversion section.
2. A power module with nanosecond-level high-speed flash function according to claim 1, characterized in that, The optical switching circuit uses a PMOS transistor as a switch directly integrated into the output positive circuit. It is directly driven by the control circuit through the GPIO pin to achieve nanosecond-level switching between the white light and ultraviolet light channels. The on-resistance of the PMOS transistor is less than or equal to 10mΩ, and the switching delay time is less than or equal to 50ns.
3. A power module with nanosecond-level high-speed flash function according to claim 2, characterized in that, The dimming section adopts a method of connecting 4 linear dimming circuits in parallel to the output negative circuit. The 4 linear dimming circuits together achieve a total current output of 15A. Each linear dimming circuit is constructed by using a linear LED controller and an NMOS transistor. The gate charge of the NMOS transistor is less than or equal to 15nC and the switching frequency supports 10kHz or higher. The linear LED controller uses a BCR602 chip, which supports a maximum PWM dimming frequency of 3.5KHz, a minimum duty cycle of 1%, and a minimum lighting pulse width of 2.9μs, meeting the minimum lighting pulse width requirement of 50μs. Through optimization of the external driving circuit, the flash pulse width can be reduced to the nanosecond level.
4. A power module with nanosecond-level high-speed flash function according to any one of claims 1-3, characterized in that, Also includes: The auxiliary power supply adopts a flyback scheme and provides 12V and 5V auxiliary voltages. The two auxiliary voltages are isolated from each other and supply power to the control circuit and the dimming section. And / or, an output current detection module is provided on the output side of the AC / DC conversion section to detect the output current and transmit it to the control circuit and feed it back to the input side of the AC / DC conversion section.
5. A power module with nanosecond-level high-speed flash function according to any one of claims 1-3, characterized in that, The AC power supply section includes an EMI circuit, a rectifier and filter circuit, and a surge suppression circuit; The AC power supply passes through the EMI circuit, rectifier and filter circuit and surge suppression circuit in sequence to provide AC power to the AC-DC conversion section in the next stage. The EMI circuit adopts an EMI filter circuit architecture, which consists of three common-mode inductors and three X capacitors to form a three-stage EMI filter circuit. At the same time, a Y capacitor is grounded, which attenuates interference of 10kHz~10MHz by ≥40dB, ensuring the stability of power input during high-frequency flash. A varistor is connected in parallel at the input to absorb surge spikes on the AC line. The rectifier and filter circuit adopts a full-bridge rectifier circuit architecture. The surge suppression circuit adopts an active surge current protection circuit, which uses a power resistor and MOSFET cooling method. At the moment of power-on, the high resistance value of the power resistor is used to suppress the surge current, ensuring that the start-up current does not exceed 2.5 times the rated current. After a delay, when the surge current ends, the MOSFET is driven to conduct through the control signal, short-circuiting the two ends of the power resistor, thereby reducing the power consumption of the power resistor.
6. A power module with nanosecond-level high-speed flash function according to any one of claims 1-3, characterized in that, The AC / DC conversion section includes a PFC circuit and an LLC resonant half-bridge circuit; The PFC circuit uses a Boost power factor correction circuit to convert the input single-phase AC power into a stable high-voltage DC voltage. The LLC resonant half-bridge circuit converts the high-voltage DC voltage into a stable and adjustable isolated output voltage to provide power to the subsequent circuits while achieving electrical isolation between the primary and secondary sides.
7. A power module with nanosecond-level high-speed flash function according to claim 6, characterized in that, The PFC circuit introduces a dynamic voltage regulation algorithm, which automatically adjusts the output bus voltage in the AC-DC conversion section according to the duty cycle of the flash mode. During the flash interval, the bus voltage is reduced to reduce standby power consumption, and the voltage is quickly restored to the desired level when the flash starts. The control circuit incorporates a frequency adaptive algorithm to automatically adjust the resonant frequency of the LLC resonant half-bridge circuit based on the load current.
8. A control method for a power module with nanosecond-level high-speed flash function according to any one of claims 1-7, characterized in that, include: A three-level interrupt response mechanism is adopted: Level 1, GPIO hardware interrupt directly controls the switching between white light and ultraviolet light channels, that is, triggers the flash enable signal; The second stage is the timer interrupt control for PWM pulse width generation, ensuring nanosecond-level steps for pulse width adjustment from 25μs to 500ms; the third stage is the USART communication interrupt, enabling real-time parsing and execution of host computer instructions. The time base signal is generated by the timer of the control circuit, with a minimum interval time of less than or equal to 100100μs and dynamic adjustment is supported: a preload register mechanism is adopted to ensure that the pulse width and interval parameters are updated without delay. By combining hardware synchronization trigger signals, nanosecond-level synchronous flashing between multiple modules is achieved, and the turn-on / turn-off dead time of the MOSFETs is automatically set according to the flashing frequency. The dead time is reduced during high-frequency flashing to reduce duty cycle loss, and the dead time is increased during low-frequency flashing to avoid shoot-through between the upper and lower MOSFETs.
9. The control method according to claim 8, characterized in that, Also includes: The control circuit uses a built-in ADC module to collect the output current at a sampling rate of 100,000 times per second, calculates the rate of change of the current, and immediately triggers a soft shutdown when the rate of change of the current exceeds a threshold. Temperature is monitored in real time by temperature sensors installed in the optical switching circuit and the output terminal of the optical module. When the temperature exceeds the threshold, the flash peak current is automatically reduced until the temperature loop recovers to below the expected value. By statistically analyzing historical data, a loss model is established to predict the lifespan of the devices in the power module. When the predicted remaining lifespan of a certain device reaches a threshold, an early warning signal is sent to the host computer through the communication interface to update the data in advance.
10. The control method according to claim 8, characterized in that, Also includes: Upon initial power-on, the current-voltage characteristics of the white light and ultraviolet light modules are automatically detected, generating personalized current-voltage curves. In flash mode, the output voltage is dynamically adjusted to ensure that the voltage drop of the MOSFET is stable at the threshold, thereby reducing power consumption fluctuations. When continuous high-frequency flashes are detected, the intermittent buffer mode is automatically activated.