Light-operated node controlled by ultra-light heavy current and preparation method of light-operated node
By designing an ultra-lightweight, high-current controlled optical node, and using a base, microcircuit components, and a transparent encapsulation layer to construct an ampere-level current carrying path, the problem of insufficient current carrying capacity of traditional optical control devices is solved, and a high-performance and reliable optical control node is achieved.
Patent Information
- Application Number
- CN202511675934.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-14
- Publication Date
- 2026-02-24
AI Technical Summary
Traditional optical control devices typically have a current carrying capacity of less than 100mA, and their thermal management and interconnect reliability are insufficient in flexible dynamic application scenarios, which limits the power performance of the system.
An ultralight, high-current controlled optical node was designed. It uses a base and microcircuit components, and constructs an ampere-level current carrying path through conductive pad array, electrical connection of microcircuit components and transparent encapsulation layer. Flexible insulating and conductive materials are used, and laser cutting is combined to form the final device.
The current carrying capacity of the optical control node has been improved to the ampere level, the response speed is less than 100ns, the connection reliability is improved, and the weight and performance requirements of complex optical control systems are met.
Smart Images
Figure CN121568445A_ABST
Abstract
Description
Technical Field
[0001] This invention patent relates to the field of optoelectronic device technology, specifically to an ultralight, high-current controlled optical node and its fabrication method. Background Technology
[0002] With the development of cutting-edge technologies such as programmable metasurfaces and soft robots, higher demands are being placed on the performance of optical control devices. However, traditional optocouplers, optotransistors, and other devices are limited by material systems and packaging technologies, and their current carrying capacity is mostly below 100mA, which severely restricts the power performance of the entire system.
[0003] Existing technologies for achieving micro-optical control, such as silicon-based optocoupler integration or thin-film transistors, face insurmountable obstacles in increasing current capacity: firstly, the increase in current density leads to prominent thermal management issues; secondly, in flexible and dynamic usage scenarios, the reliability of traditional interconnection methods such as solder joints and leads is insufficient, directly affecting the robustness of the current path.
[0004] In summary, breaking through the current carrying capacity limit of traditional devices and developing a light control node with ampere-level driving capability and reliable connection is a key technical problem that urgently needs to be solved in this field.
[0005] The present invention solves the above problems by designing an ultra-lightweight, high-current controlled optical node, thereby increasing the current carrying capacity to the ampere level. Summary of the Invention
[0006] This invention provides an ultralight, high-current controlled optical node, including a base and microcircuit components. The base has multiple pads arranged to form a conductive pad array. The microcircuit components are mounted on the pads and electrically connected to them. The microcircuit components are bonded together by bonding wires to form an ampere-level current carrying path. A transparent encapsulation layer is also provided on top of the microcircuit components.
[0007] Furthermore, the size of the light-controlled node is less than 5mm × 5mm in planar dimensions, and its mass is 0.003g-0.01g.
[0008] Furthermore, the current carrying capacity of the optical control node is greater than 1A, and the response speed is less than 100ns.
[0009] Furthermore, the optical control node includes at least a MOSFET device, which includes a first MOSFET device and a second MOSFET device. The first MOSFET device and the second MOSFET device are connected by a common emitter and form a topologically symmetrical layout with the common circuit node as the center.
[0010] Furthermore, the microcircuit components include MOSFET devices (first MOSFET device, second MOSFET device), photodiode devices, and resistor devices.
[0011] Furthermore, the conductive pad array includes MOSFET pads (first MOSFET pad, second MOSFET pad), photodiode pads, resistor pads, and -VCC terminal pads.
[0012] Furthermore, both the MOSFET pad and the -VCC terminal pad have outwardly extending conductive layers on their outer sides to enhance electrical connection with the outside world.
[0013] This invention provides a method for fabricating an ultralight, high-current controlled optical node as described above, the method comprising the following steps:
[0014] A flexible insulating material is used as a base, and multiple pads are laid on the base to form a conductive pad array.
[0015] Microcircuit components are mounted on their corresponding pads and electrically connected using conductive materials;
[0016] According to the circuit schematic, bonding wires are used to connect and bond microcircuit components to construct an ampere-level current carrying path.
[0017] A transparent encapsulation material is coated and cured over the microcircuit component area of the optical control node;
[0018] The base is laser-cut according to a preset contour to form the final device.
[0019] Furthermore, the flexible insulating material is selected from, but is not limited to, polyimide (PI) and polyethylene terephthalate (PET).
[0020] Furthermore, the conductive material is selected from, but is not limited to, conductive silver paste, conductive copper paste, silver nanowires, and conductive ink.
[0021] Furthermore, the bonding wire material is selected from gold bonding wire, copper bonding wire, and aluminum bonding wire, but is not limited to these.
[0022] Furthermore, the transparent encapsulation material is selected from, but is not limited to, polydimethylsiloxane (PDMS), polybutylene terephthalate (Ecoflex), and phenyl silicone rubber.
[0023] In summary, this invention provides an ultralight, high-current controlled optical node and its fabrication method. The overall fabrication process is simple and efficient, meeting the stringent requirements of complex optical control systems for weight, performance, and reliability. It solves the problem that the current carrying capacity of traditional devices is limited to below 100mA, and improves the current carrying capacity of optical control nodes to the ampere level. Attached Figure Description
[0024] Figure 1 The schematic diagram of an ultra-lightweight, high-current controlled optical node circuit provided by the present invention is also shown in the abstract of the present invention.
[0025] Figure 2 The main flowchart of the fabrication method of an ultralight, high-current controlled optical node provided by the present invention is shown.
[0026] Figures 3 to 7 This is a schematic diagram illustrating the structural steps of the fabrication process for an ultralight, high-current controlled optical node provided by the present invention. Figure 3 This is a structural diagram corresponding to step S1. Figure 4 This is a structural diagram corresponding to step S2. Figure 5 This is a structural diagram corresponding to step S3. Figure 6 This is a structural diagram corresponding to step S4. Figure 7 This is a structural diagram corresponding to step S5. Detailed Implementation
[0027] To further clarify the specific working principle of this invention patent, the following description is in conjunction with the appendix. Figure 1 The present invention will be described in detail below.
[0028] This light-controlled node employs an innovative design based on a symmetrical MOSFET (Q1 / Q2) structure. Its core objective is to utilize light signals to achieve bidirectional conduction control of a high-current path from the high-current path voltage V+ to ground GND. This design avoids the directional limitations of traditional light-controlled relays, providing extremely high application flexibility. This light-controlled node can be applied to programmable metasurfaces, wearable devices, and other scenarios, but is not limited to these. The specific working mechanism is detailed below:
[0029] As attached Figure 1As shown, this circuit uses a common-source connection, directly connecting the source (S1) of MOSFET Q1 (the first MOSFET device) and the source (S2) of MOSFET Q2 (the second MOSFET device), and forming a voltage divider circuit with a series resistor R1 and photodiode PD1. To ensure that photodiode PD1 operates in photoconductive mode (reverse bias required), its negative terminal is connected to resistor R1, and its positive terminal is connected to -VCC. The drain (D1) of Q1 is connected to GND, the drain (D2) of Q2 is connected to V+, and the gates (G1, G2) of Q1 and Q2 are connected to the negative terminal of PD1, forming a complete light-controlled node circuit.
[0030] During the light-triggered phase: V+ is fed to S2 through the body diode of Q2. When PD1 is illuminated, its equivalent resistance decreases, causing the voltage across R1 to increase, thereby increasing the gate-source voltage (V_GS) of Q1 and Q2. Once V_GS exceeds the threshold voltage (V_th) of Q1, Q1 turns on, forming a large current path from V+ to Q2 to Q1 to GND, and the light-controlled node starts working.
[0031] Illumination termination phase: After illumination stops, the equivalent resistance of PD1 approaches infinity, the voltage drop across R1 drops to zero, and V_GS of Q1 returns to zero. When the gate-source voltage (V_GS1) of Q1 falls below the threshold voltage, Q1 enters the cutoff state, the high-current path is cut off, and the light-controlled node stops working.
[0032] A significant feature of this optical control node circuit is its symmetrical complementary MOSFET structure (Q1 / Q2). These two MOSFETs and their driving conditions are mirror images of each other in the circuit topology. This allows the current direction in a high-current path to be reversed simply by physically swapping the V+ and GND leads in the external access circuit of the optical control node. This greatly simplifies the design of applications that require control of current in different directions, improving versatility and deployment efficiency.
[0033] To further describe the steps of the specific embodiments of this invention patent more clearly, the following description is in conjunction with the appendix. Figure 2-7 This embodiment will be described in detail.
[0034] Appendix Figure 2 The main flowchart of the fabrication method of an ultralight, high-current controlled optical node provided by the present invention is divided into 5 steps.
[0035] Step S1: Use a flexible insulating material as a base, and lay multiple pads on the base to form a conductive pad array.
[0036] Step S2: Mount the microcircuit components onto their corresponding pads and make electrical connections using conductive materials.
[0037] Step S3: According to the circuit schematic, bonding wires are used to bridge and bond the microcircuit components to construct an ampere-level current carrying path.
[0038] Step S4: Coat the microcircuit component area of the light control node with a transparent encapsulation material and cure it.
[0039] Step S5: Laser cut the base according to the preset contour to form the final device.
[0040] In some implementations of step S1, such as Figure 3 As shown, multiple pads are placed on the base 1 according to the actual layout of the microcircuit components of the light-controlled node to form a conductive pad array. These pads include a first MOSFET pad 4, a second MOSFET pad 5, a photodiode pad 2, a resistor pad 7, and a -VCC terminal pad 8. A conductive layer (first conductive extension wing region 3) is designed and placed on the outer side of the first MOSFET pad 4, a conductive layer (second conductive extension wing region 6) is designed and placed on the outer side of the second MOSFET pad 5, and a conductive layer (third conductive extension wing region 9) is designed and placed on the outer side of the -VCC terminal pad 8. These features enhance the contact performance of the electrical connection interface with the outside world and improve connection stability. The flexible insulating material is selected from, but is not limited to, polyimide (PI) and polyethylene terephthalate (PET).
[0041] In some implementations of step S2, such as Figure 4 As shown, a surface mount technology (SMT) is used to attach a first MOSFET device 10 to a first MOSFET pad 4 using conductive material, a second MOSFET device 11 to a second MOSFET pad 5 using conductive material, a photodiode device 12 to a photodiode pad 2 using conductive material, and a resistor device 13 to both the photodiode pad 2 and the resistor pad 7 using conductive material. The conductive material is selected from, but is not limited to, conductive silver paste, conductive copper paste, silver nanowires, and conductive ink.
[0042] In some implementations of step S3, such as Figure 5As shown, the bonding wires include a first bonding wire 18, a second bonding wire 19, a third bonding wire 20, a fourth bonding wire 21, and a fifth bonding wire 22. The first bonding wire 18 connects to the source 14 of the first MOSFET device 10 and the source 15 of the second MOSFET device 11. The second bonding wire 19 connects to the source 15 of the second MOSFET device 11 and the resistor pad 7. The third bonding wire 20 connects to the gate 17 of the second MOSFET device 11 and the photodiode pad 2. The fourth bonding wire 21 connects to the gate 16 of the first MOSFET device 10 and the photodiode pad 2. The fifth bonding wire 22 connects to the photodiode device 12 and the -VCC terminal pad 8. The first bonding wire 18, second bonding wire 19, third bonding wire 20, fourth bonding wire 21, and fifth bonding wire 22 use bonding wires with a diameter of 50μm-100μm (to prevent high-current melting) to ensure that the current carrying capacity reaches the ampere level. The bonding wire material is selected from gold bonding wire, copper bonding wire, and aluminum bonding wire, but is not limited to these.
[0043] In some implementations of step S4, such as Figure 6 As shown, a transparent encapsulation material 23 is coated and cured over the microcircuit component area of the optical control node. The coating area of the transparent encapsulation material 23 must not cover the first conductive extension wing area 3, the second conductive extension wing area 6, or the third conductive extension wing area 9. The transparent encapsulation material is selected from, but is not limited to, polydimethylsiloxane (PDMS), polybutylene terephthalate (Ecoflex), and phenyl silicone rubber.
[0044] In some implementations of step S5, such as Figure 7 As shown, the base 1 is processed by laser cutting according to the preset outline of the optical control node to form the final device.
[0045] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0046] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.
Claims
1. A lightweight, high-current controlled optical node, characterized in that, The device includes a base and microcircuit components. The base has multiple pads arranged to form a conductive pad array. The microcircuit components are mounted on the pads and electrically connected to them. The microcircuit components are bonded together by bonding wires to form an ampere-level current carrying path. A transparent encapsulation layer is also provided on top of the microcircuit components.
2. The ultralight, high-current controlled optical node as described in claim 1, characterized in that, The optical control node has a planar dimension of less than 5mm × 5mm and a mass of 0.003g-0.01g.
3. The ultralight, high-current controlled optical node as described in claim 1, characterized in that, The optical control node has a current carrying capacity of greater than 1A and a response speed of less than 100ns.
4. The ultralight, high-current controlled optical node as described in claim 1, characterized in that, The optical control node includes at least a MOSFET device, which includes a first MOSFET device and a second MOSFET device. The first MOSFET device and the second MOSFET device are connected by a common emitter and form a topologically symmetrical layout with the common circuit node as the center.
5. The ultralight, high-current controlled optical node as described in claim 1, characterized in that, The microcircuit components include MOSFET devices, photodiode devices, and resistor devices.
6. The ultralight, high-current controlled optical node as described in claim 1, characterized in that, The conductive pad array includes MOSFET pads, photodiode pads, resistor pads, and -VCC terminal pads.
7. The ultralight, high-current controlled optical node as described in claim 6, characterized in that, Both the MOSFET pad and the -VCC pad have an outwardly extending conductive layer on their outer sides to enhance electrical connection with the outside.
8. A method for fabricating an ultralight, high-current controlled optical node as described in any one of claims 1-7, characterized in that, The preparation method includes the following steps: A flexible insulating material is used as a base, and multiple pads are laid on the base to form a conductive pad array. Microcircuit components are mounted on their corresponding pads and electrically connected using conductive materials; According to the circuit schematic, bonding wires are used to connect and bond microcircuit components to construct an ampere-level current carrying path. A transparent encapsulation material is coated and cured over the microcircuit component area of the optical control node; The base is laser-cut according to a preset contour to form the final device.
9. The method for fabricating an ultralight, high-current controlled optical node as described in claim 8, characterized in that, The conductive material is selected from one of the following: conductive silver paste, conductive copper paste, silver nanowires, and conductive ink.
10. The method for fabricating an ultralight, high-current controlled optical node as described in claim 8, characterized in that, The transparent encapsulation material is selected from one of polydimethylsiloxane, polybutylene terephthalate, and phenyl silicone rubber.