A temperature control system for controlled irradiation treatment of semiconductor modification

Abstract

The application relates to a controllable radiation treatment temperature control system for semiconductor modification, and belongs to the technical field of semiconductor treatment systems. The controllable radiation treatment temperature control system for semiconductor modification comprises a positioning table, a temperature control assembly, a heat conduction piece, a sensor and a control module, the positioning table is used for carrying a wafer; the temperature control assembly is used for temperature control; the heat conduction piece is arranged between the positioning table and the temperature control assembly and can rotate; a first heat conduction protrusion is arranged on the edge of the side of the heat conduction piece facing the positioning table; a second heat conduction protrusion is correspondingly arranged on the edge of the side of the positioning table facing the heat conduction piece; the sensor is used for detecting the temperatures of the central region and the edge region of the wafer; and the control module controls the rotation of the heat conduction piece according to the temperature difference between the central region and the edge region of the wafer, so as to adjust the contact area between the first heat conduction protrusion and the second heat conduction protrusion. The controllable radiation treatment temperature control system for semiconductor modification provided by the application can form a uniform and stable temperature field on the surface of a wafer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing system, in particular to a controllable radiation processing temperature control system for semiconductor modification. BACKGROUND

[0002] In the semiconductor manufacturing process, the wafer often needs to be accurately controlled in a stable temperature range during processing. During ion implantation, plasma etching and various irradiation processes, the wafer will generate a large amount of heat due to continuous energy bombardment, causing its temperature to rise sharply. In order to ensure process yield, efficient and uniform temperature control must be performed on the wafer.

[0003] In actual operation, due to manufacturing tolerances and thermal stress deformation, the bottom surface of the wafer is often slightly arc-shaped. When it is placed on the temperature control base, the edge area is easy to form a gap with the surface of the base, causing poor local thermal contact. This gap will cause the edge area of the wafer to be blocked from dissipating heat, thereby forming a significant temperature difference between the center and the edge.

[0004] In order to improve temperature uniformity, the prior art usually adopts a zoned temperature control scheme, for example, different cooling liquids with different heat exchange capacities are introduced into the inner and outer cavities of the base, in an attempt to balance the temperature inside and outside the wafer. However, such methods have fundamental defects. It is a kind of preset compensation method, which is difficult to respond to the dynamic changes in temperature difference in real time, and the adjustment flexibility and precision are limited. When the process conditions change or the wafer state fluctuates, resulting in a new temperature difference, the existing system is difficult to achieve effective dynamic compensation due to response lag and insufficient adjustment precision, so that the wafer is always in a non-ideal temperature distribution state.

[0005] Therefore, there is an urgent need in the art for a new temperature control system that can actively and real-time adjust and effectively compensate for changes in the thermal resistance between the wafer and the base, to achieve a uniform and stable temperature field on the entire wafer surface. SUMMARY

[0006] The present application aims to solve the above problems and provides a controllable radiation processing temperature control system for semiconductor modification, which can form a uniform and stable temperature field on the wafer surface, thereby improving the above problems.

[0007] The present application is achieved by the following technical solutions:

[0008] The application provides a controllable radiation treatment temperature control system for semiconductor modification, which comprises a positioning table, a temperature control assembly, a heat conduction member, a sensor and a control module. The positioning table is used for carrying and fixing a wafer of a semiconductor. The temperature control assembly is arranged below the positioning table and is used for temperature control. The heat conduction member is arranged between the positioning table and the temperature control assembly and is in close contact with both of them and can rotate around the wafer axis. The edge of the heat conduction member towards the positioning table is provided with a plurality of first grooves uniformly distributed in the circumferential direction, and a first heat conduction protrusion is formed between adjacent first grooves. The edge of the positioning table towards the heat conduction member is provided with a plurality of second grooves uniformly distributed in the circumferential direction, and a second heat conduction protrusion is formed between adjacent second grooves. The sensor is used for detecting the temperature of the central region and the edge region of the wafer. The control module is used for controlling the rotation of the heat conduction member according to the temperature difference between the central region and the edge region of the wafer, so as to adjust the contact area between the first heat conduction protrusion and the second heat conduction protrusion.

[0009] In the technical scheme of the embodiment of the application, the controllable radiation treatment temperature control system for semiconductor modification overcomes the defects of existing partition temperature control presetting and response lag. The system directly uses temperature difference as a signal and actively adjusts the contact thermal resistance, so that the response speed is fast, the adjustment is accurate, and the dynamic changing temperature difference in the process can be effectively tracked and inhibited. By adjusting the heat dissipation efficiency of the edge region, the core problem of the edge gap leading to temperature difference is directly addressed, so that a highly uniform and stable temperature field is formed on the entire wafer surface, thereby laying a foundation for improving process yield (such as ion implantation doping uniformity and etching line width consistency). The controllable radiation treatment temperature control system for semiconductor modification provided by the application does not depend on a fixed process model and has good adaptability to wafer deformation caused by different manufacturing tolerances and different thermal load process recipes. Even if the process conditions fluctuate, the system can automatically compensate through closed-loop feedback.

[0010] In some embodiments, the heat conduction member comprises a first part and a second part arranged coaxially. The second part corresponds to the central region of the wafer, and the first part surrounds the second part and corresponds to the edge region of the wafer. The heat conduction performance of the first part is better than that of the second part. The first grooves are arranged in the first part.

[0011] In the technical solution of the embodiments of the present application, even when static (non-rotating adjustment) or when the temperature difference is small, the inherent thermal conductivity difference between the first part (high thermal conductivity) and the second part (relatively low thermal conductivity) itself constitutes a heat flow path that tends to balance the temperature difference between the center and the edge. The edge part with high thermal conductivity can more effectively carry away the edge heat, thereby providing a basic temperature uniformization effect before the system starts to adjust. The first groove and the first heat-conducting protrusion are arranged on the first part with better heat conduction performance, which means that the adjustment of the thermal resistance can be carried out on a main heat flow path. Small changes in contact area can cause significant changes in heat flow, which makes the system adjustment more sensitive and effective, and a smaller rotation angle can achieve greater temperature difference correction, improving the energy efficiency and response speed of the system.

[0012] In some embodiments, the housing is further provided inside with a closed recovery cavity; the heat-conducting member and the temperature control assembly are arranged in the recovery cavity; and the surface of the positioning table in contact with the heat-conducting member is located in the recovery cavity.

[0013] In the technical solution of the embodiments of the present application, the heat-conducting member, the temperature control assembly, and the friction surface of the positioning table in contact with the heat-conducting member are all arranged in the recovery cavity, and the inherent risk is limited in a closed and non-critical area through the recovery cavity. This prevents the friction dust generated by the mechanical movement of the temperature control system from polluting the wafer and the process, ensuring the yield of the product. It ensures that the particulate pollutants generated inside the system are recovered and will not become a source of pollution affecting the entire semiconductor manufacturing process, meeting the stringent requirements of semiconductor equipment for particulate control.

[0014] In some embodiments, the side of the recovery cavity away from the wafer is provided with an air outlet, the side close to the wafer is provided with an air inlet, and the air outlet and the air inlet are connected through a circulation pipe; and an air flow generating device is arranged in the circulation pipe to push the air in the recovery cavity into the circulation pipe and then return to the recovery cavity through the circulation pipe.

[0015] In the technical solution of the embodiments of the present application, the recovery cavity is upgraded from passively containing dust to actively capturing dust. Through directional airflow, dust can be carried away before it settles and accumulates in the critical mechanical interface (such as the gap between the first heat-conducting protrusion and the second heat-conducting protrusion), effectively preventing potential interference of dust on the thermal contact stability and rotational flexibility.

[0016] In some embodiments, the compensation mechanism further comprises a plurality of compensation members, the thermal conductivity of the compensation members is lower than that of the heat-conducting member, the plurality of first grooves and the plurality of second grooves correspond to each other in the circumferential direction and enclose a plurality of cavities, and the compensation members are in contact with the two surfaces of the first grooves and the second grooves opposite in the thickness direction of the wafer.

[0017] The compensation member makes the system have a reliable thermal base between the two limit states of maximum heat dissipation and minimum heat dissipation. It prevents the overheating of the edge area when the heat dissipation needs to be extremely limited, and avoids the thermal shock caused by the slight contact change when the maximum heat dissipation is needed, so that the whole adjustment process is smoothly carried out in a wider and safer range. The compensation member enables the cavity surrounded by the first groove and the second groove to also have a certain heat conduction capacity, avoiding the gap between the contact part of the first heat conduction protrusion and the second heat conduction protrusion and the cavity surrounded by the first groove and the second groove being too large when the contact area between the first heat conduction protrusion and the second heat conduction protrusion is maximum.

[0018] In some embodiments, the compensation mechanism further comprises a connecting ring and a plurality of positioning assemblies, the connecting ring is sleeved outside the heat conduction member and can rotate relative to the heat conduction member; the plurality of compensation members are fixedly connected to the inner circumferential surface of the connecting ring; the plurality of positioning assemblies are circumferentially arranged around the wafer axis; the positioning assembly is arranged in the cavity surrounded by the first groove and the second groove and comprises two elastic members, the two elastic members are respectively connected to the two wall surfaces opposite in the circumferential direction of the first groove and the second groove constituting the cavity, and the free ends of the two elastic members are both abutted against the compensation member; when the heat conduction member rotates, the two elastic members located in the same cavity drive the connecting ring to rotate by pushing the compensation member, so that the compensation member remains in the center of the cavity.

[0019] In the technical scheme of the embodiments of the present application, by keeping the compensation member in the center of the cavity at all times, contact or too large gap between the compensation member and the wall of the groove during the adjustment process is avoided. This ensures that the compensation path thermal resistance of the compensation member always remains stable and predictable, making the thermal regulation behavior of the whole system more accurate and eliminating the variables introduced by the uncertain position of the compensation member. The design of the connecting ring connects multiple independent compensation members into a whole and flexibly connects them with the rotating heat conduction member through the elastic members. This enables the compensation member to automatically follow the adjustment action of the system, but does not rigidly hinder the rotation of the heat conduction member or affect the contact pressure of the first heat conduction protrusion and the second heat conduction protrusion. The cushioning effect of the elastic members avoids the hard collision and friction between the compensation member and the groove wall, reducing wear. At the same time, keeping the compensation member centered prevents local damage or functional failure caused by long-term eccentric wear, prolonging the maintenance cycle and service life of the compensation mechanism.

[0020] In some embodiments, the surface of the heat conduction member facing the temperature control assembly is provided with a protrusion, the protrusion is offset from the axis of the heat conduction member; the temperature control assembly is provided with a movable slot for accommodating the protrusion, and a driving member is arranged in the movable slot; the driving member is used to drive the protrusion to rotate, thereby driving the heat conduction member to rotate.

[0021] In the technical scheme of the embodiment of the present application, the driving member is arranged at the bottom of the heat conduction member and is driven by a protrusion deviated from the shaft center, so that the heat generated by the motor and other components that may generate dust particles is avoided from being directly integrated with the heat conduction path, and the stability of the heat flow and the cleanliness of the interface are ensured.

[0022] In some embodiments, the flexible heat conduction material is filled in the active slot.

[0023] In the technical scheme of the embodiment of the present application, the heat conduction material actively leads the parasitic heat generated by the driving mechanism out of the system and into the management system of the temperature control assembly, so that the additional heat is prevented from being transmitted upward through the heat conduction member and interfering with the temperature field of the wafer, thereby ensuring that the wafer temperature uniformity is not destroyed by internal factors. The service life of electronic components is strongly related to the working temperature. Effective cooling significantly reduces the working temperature of the driving member, thereby prolonging its service life and improving the long-term reliability of the entire temperature control system. The flexible heat conduction material fills the gap between components and also plays a certain buffering and damping role, absorbs the slight vibration generated when the driving member operates, makes the rotating movement of the heat conduction member more stable, and reduces the impact and noise.

[0024] In some embodiments, the first heat conduction protrusion and the second heat conduction protrusion are at least partially in contact.

[0025] In the technical scheme of the embodiment of the present application, the at least partial contact between the first heat conduction protrusion and the second heat conduction protrusion sets a safe physical lower limit for the entire dynamic adjustment process, prevents the complete thermal isolation of the wafer edge area, avoids the uncontrollable rise in temperature and the possible thermal damage to the wafer, and improves the operation safety and process reliability of the system. An always-existing basic heat flow path makes the overall thermal conductivity of the system change more smoothly and predictably with the rotation angle. This simplifies the control algorithm of the control module, makes the adjustment based on temperature difference feedback more linear, and is conducive to achieving higher precision temperature stability. The constant contact means that the relative movement between the first heat conduction protrusion and the second heat conduction protrusion is a slight movement under contact pressure, rather than repeated impact and separation. This helps to maintain the stable characteristics of the contact interface and reduces wear and performance degradation caused by impact and idle stroke.

[0026] In some embodiments, an electrostatic generating device is arranged inside the positioning table to generate static electricity to adsorb the wafer.

[0027] In the technical scheme of the embodiment of the present application, the electrostatic adsorption provides strong and stable clamping force, ensures that the wafer and the positioning table are in close contact on a macroscopic level, establishes an indispensable physical basis for efficient heat conduction, and prevents the wafer from moving during the process (such as when subjected to air flow or mechanical vibration), which not only ensures process safety but also avoids temperature control failure caused by wafer displacement.

[0028] Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will become apparent to those having ordinary skill in the art upon examination of the following or can be learned from practice of the application. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some of the embodiments of the present application, and therefore should not be considered as a limitation to the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0030] Figure 1 The overall external structure schematic diagram of the controllable radiation treatment temperature control system for semiconductor modification provided by some embodiments of the present application;

[0031] Figure 2 The sectional view of the controllable radiation treatment temperature control system for semiconductor modification provided by some embodiments of the present application;

[0032] Figure 3 The structure schematic diagram of the controllable radiation treatment temperature control system for semiconductor modification provided by some embodiments of the present application when the contact area between the first heat-conducting protrusion and the second heat-conducting protrusion is the smallest;

[0033] Figure 4 The enlarged view of A in FIG. 1; Figure 3

[0034] Figure 5 The structure schematic diagram of the controllable radiation treatment temperature control system for semiconductor modification provided by some embodiments of the present application when the contact area between the first heat-conducting protrusion and the second heat-conducting protrusion is the largest

[0035] Figure 6 The enlarged view of B in FIG. 1; Figure 5

[0036] Figure 7 The structure schematic diagram of the heat-conducting member and the compensation mechanism provided by some embodiments of the present application;

[0037] Figure 8 The enlarged view of C in FIG. 1; Figure 7

[0038] The top view of the controllable radiation treatment temperature control system for semiconductor modification provided by some embodiments of the present application; Figure 9

[0039] The enlarged sectional view of E in FIG. 1 when the contact area between the first heat-conducting protrusion and the second heat-conducting protrusion is the largest Figure 10 Figure 9 ​​​​

[0040] Figure 11 The contact area between the first heat-conducting protrusion and the second heat-conducting protrusion provided for some embodiments of the present application is the smallest Figure 9 An enlarged sectional view at E in the middle;

[0041] Figure 12 A partial sectional view of a controllable radiation treatment temperature control system for semiconductor modification provided for some embodiments of the present application;

[0042] Figure 13 Provided for Figure 12 An enlarged view at F in the middle.

[0043] Figure: 1-wafer; 2-positioning table; 20-second groove; 21-second heat-conducting protrusion; 3-temperature control assembly; 30-moving groove; 4-heat-conducting member; 40-first groove; 41-first heat-conducting protrusion; 42-first part; 43-second part; 44-bump; 5-housing; 50-recovery cavity; 51-circulation pipe; 6-compensation mechanism; 60-compensation member; 61-connection ring; 62-positioning assembly; 620-elastic member. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0045] Unless otherwise defined, all technical and scientific terms used in the present application have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs; the terms used in the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms “include” and “have” and any variations thereof in the specification and claims of the present application and the above description of drawings are intended to cover non-exclusive inclusion. The terms “first”, “second” and the like in the specification and claims of the present application and the above description of drawings are used to distinguish different objects, rather than to describe a particular order or primary and secondary relationship.

[0046] In the present application, the phrase “embodiment” means that the specific features, structures or characteristics described in conjunction with the embodiment can be included in at least one embodiment of the present application. The appearance of this phrase at various places in the specification does not necessarily mean the same embodiment, nor is it an independent or alternative embodiment to other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in the present application can be combined with other embodiments.

[0047] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting", "attachment" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0048] The term "and / or" in the present application is only to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B can mean that A exists alone, A and B exist together, and B exists alone. In addition, the character " / " in the present application generally represents that the front and rear associated objects have an "or" relationship.

[0049] The "multiple" appearing in the present application refers to two or more (including two), and similarly, "multiple groups" refers to two or more groups (including two groups), and "multiple pieces" refers to two or more pieces (including two pieces).

[0050] According to some embodiments of the present application, optionally, as shown in Figures 1-6 According to some embodiments of the present application, optionally, as shown in

[0051] Semiconductor radiation modification is an advanced technology that uses high-energy particle beams or radiation to irradiate semiconductor materials. By controlling the radiation conditions, controllable lattice defects, altered doping distribution, or adjusted energy band structure can be introduced inside the material, thereby precisely regulating its electrical, optical, or mechanical properties. This technology can be applied to enhance device voltage resistance, optimize carrier lifetime, improve radiation resistance, or create new micro / nano structures, making it valuable in aerospace electronics, radiation detectors, power devices, and other special fields. It is one of the most efficient means to tailor the performance of semiconductor materials.

[0052] The temperature of the semiconductor wafer 1 has a crucial and even decisive impact on the radiation modification effect. Temperature non-uniformity within the same wafer 1 can lead to severe spatial non-uniformity and unpredictability of the modification effect, thereby affecting the consistency and reliability of the wafer 1 performance. Therefore, in the semiconductor radiation modification process, ensuring the uniformity and stability of the wafer temperature during irradiation is a key prerequisite for obtaining controllable and consistent modification results.

[0053] In actual application, the wafer 1 is loaded and fixed on the positioning table 2. The temperature control assembly 3 starts to work and controls the overall temperature of the positioning table 2 and the wafer 1 through basic heat conduction. After the process starts, such as ion implantation or plasma etching, the energy bombardment causes the wafer 1 temperature to rise. The sensor continuously and synchronously monitors the temperature of the center and edge regions of the wafer 1 and sends these real-time temperature data to the control module. The control module calculates the real-time temperature difference between the center and the edge. This difference directly reflects the severity of the poor thermal contact caused by the micro-arc shape of the wafer 1 bottom surface. According to the preset control algorithm and this temperature difference, the control module calculates the direction and angle of rotation of the heat conduction piece 4. The control module sends instructions to the driving mechanism to drive the heat conduction piece 4 to rotate a small angle around the wafer 1 axis. This rotation changes the overlapping relationship between the first heat conduction protrusion 41 and the second heat conduction protrusion 21: when it is necessary to reduce the edge heat dissipation, the control module reduces the contact area between the first heat conduction protrusion 41 and the second heat conduction protrusion 21, increasing the thermal resistance. When it is necessary to enhance the edge heat dissipation, the control module increases the contact area between the first heat conduction protrusion 41 and the second heat conduction protrusion 21, reducing the thermal resistance. The system can respond to dynamic factors that cause the temperature difference between the center and the edge of the wafer 1 to increase, such as process power fluctuations and wafer 1 state changes, by continuously adjusting the contact area to maintain the temperature difference between the center and the edge of the wafer 1 within a range that meets the process requirements until the process is complete.

[0054] The controllable radiation treatment temperature control system for semiconductor modification provided in the application overcomes the defects of existing partition temperature control presetting and response lag. The system directly uses temperature difference as a signal, actively adjusts the contact thermal resistance, has fast response speed, accurate adjustment, and can effectively track and suppress the dynamic change of temperature difference in the process. By adjusting the heat dissipation efficiency of the edge area, the core problem of the edge gap leading to temperature difference is directly addressed, thereby forming a highly uniform and stable temperature field on the entire wafer 1 surface, laying a foundation for improving process yield (such as ion implantation doping uniformity, etching line width consistency). The controllable radiation treatment temperature control system for semiconductor modification provided in the application does not depend on a fixed process model and has good adaptability to wafer 1 deformation caused by different manufacturing tolerances and different thermal load process recipes. Even if the process conditions fluctuate, the system can automatically compensate through closed-loop feedback.

[0055] In the implementation process, the cross-sectional shape of the first and second heat-conducting protrusions 41 and 21 can not be limited to a rectangle, but can be a trapezoid, a sawtooth shape, or a parabolic shape. Different shapes can produce different changing gradients of contact area at the same rotation angle, thereby achieving nonlinear fine optimization of the thermal resistance adjustment characteristics to adapt to more complex temperature control requirements.

[0056] The heat-conducting member 4 itself can be a multi-layer composite structure, for example, composed of a high-thermal-conductivity base (such as a copper alloy) and a surface wear-resistant / oxidation-resistant coating (such as a diamond-like carbon film). This not only ensures efficient overall heat conduction, but also improves the durability and stability of the first heat-conducting protrusion 41 under long-term rotary friction, prolonging the service life of the system.

[0057] According to some embodiments of the application, as shown in Figure 2 and Figures 1-2 The heat-conducting member 4 includes a first portion 42 and a second portion 43 arranged coaxially, the second portion 43 corresponds to the center area of the wafer 1, and the first portion 42 surrounds the second portion 43 and corresponds to the edge area of the wafer 1; the thermal conductivity of the first portion 42 is better than that of the second portion 43; the first groove 40 is arranged in the first portion 42.

[0058] The first portion 42 can use oxygen-free copper or pyrolytic graphite with extremely high thermal conductivity, and the second portion 43 can use stainless steel or invar with relatively low thermal conductivity. Alternatively, a high-efficiency heat transfer element such as a heat pipe or a uniform temperature plate is embedded in the first portion 42.

[0059] The center area and the edge area of the wafer 1 mentioned in the application refer to the alignment of the partition of the heat-conducting member 4 with the corresponding area of the wafer 1 in the vertical projection.

[0060] In actual application, due to the better thermal conductivity of the first part 42 than the second part 43, the conduction intrinsic ability from the edge of the wafer 1 to the temperature control assembly 3 is stronger than that from the center area. When the sensor detects that the temperature of the edge of the wafer 1 is higher than that of the center, the control module sends a rotation instruction, and the adjustment effect is amplified by the high thermal conductivity of the first part 42. The reduction of the contact area of the first thermal conduction protrusion 41 will significantly hinder the already high-efficiency heat dissipation path, thereby more effectively inhibiting the edge overheating. Conversely, when the edge heat dissipation needs to be enhanced, increasing the contact area can make the high-efficiency heat conduction ability of the first part 42 fully play.

[0061] Even in a static state (not rotating adjustment) or when the temperature difference is small, the inherent thermal conductivity difference between the first part 42 (high thermal conductivity) and the second part 43 (relatively low thermal conductivity) itself constitutes a heat flow path that tends to balance the temperature difference between the center and the edge. The high-thermal-conductivity edge part can more effectively take away the edge heat, thereby providing a basic temperature uniformization effect before the system starts to adjust. By arranging the first groove 40 and the first thermal conduction protrusion 41 on the first part 42 with better thermal conductivity, the adjustment of the thermal resistance can be carried out on a main heat flow path. Small changes in contact area can cause significant changes in heat flow, which makes the system adjustment more sensitive and effective, and a smaller rotation angle can achieve greater temperature difference correction, thereby improving the energy efficiency and response speed of the system.

[0062] In specific implementation, the heat conduction member 4 can be made of a gradient functional material, so that its thermal conductivity continuously and smoothly increases from the center (the second part 43) to the edge (the first part 42). This design can eliminate the thermal mismatch that may exist at the interface of different materials, and realize the optimal intrinsic heat flow distribution.

[0063] According to some embodiments of the present application, as shown in Figure 2 optionally, the system further includes a housing 5, and the housing 5 is internally provided with a closed recovery cavity 50; the heat conduction member 4 and the temperature control assembly 3 are arranged in the recovery cavity 50; and the surface of the positioning table 2 in contact with the heat conduction member 4 is located in the recovery cavity 50.

[0064] In actual application, during system operation, the rotating movement of the heat conduction member 4 will cause micro-friction with the surface of the positioning table 2 above and the temperature control assembly 3 below, and micro-amount of dust will inevitably be generated. These friction dust will not escape to the outside process environment, but will be completely confined in the closed recovery cavity 50. By completely wrapping the friction pair in the recovery cavity 50, it is ensured that these harmful wear particles will not be brought up by the external process airflow and deposited on the front surface of the wafer 1 or other key components of the process cavity, thereby avoiding device defects caused thereby.

[0065] The processing flow of the wafer 1 is generally performed in a closed hot chamber, which cannot be accessed at will, so once dust and other impurities that may affect the processing flow appear inside the hot chamber, it is difficult to clean them in a short time. The heat conduction member 4, the temperature control assembly 3, and the friction surface of the heat conduction member 4 with the positioning table 2 are all arranged in the recovery cavity 50, and the inherent risk is limited in a closed and non-critical area through the recovery cavity 50. This prevents the friction dust generated by the mechanical movement of the temperature control system from polluting the wafer 1 and the process, ensuring the yield of the product. It ensures that the particle contamination generated inside the system is recycled and will not become a source of contamination affecting the entire semiconductor manufacturing process, meeting the stringent requirements of semiconductor equipment for particle control.

[0066] According to some embodiments of the present application, optionally, as shown in Figures 7-11 The side of the recovery cavity 50 away from the wafer 1 is provided with an air outlet, and the side close to the wafer 1 is provided with an air inlet. The air outlet and the air inlet are connected through a circulation pipe 51. A gas flow generating device is arranged in the circulation pipe 51 for pushing the air in the recovery cavity 50 into the circulation pipe 51 and then returning to the recovery cavity 50 through the circulation pipe 51.

[0067] A particle filter is arranged in the circulation pipe 51. When the gas flow containing dust passes through the filter, the particles in the gas flow are intercepted and captured, and the purified clean gas is sent back to the recovery cavity 50.

[0068] In actual application, the gas flow generating device (such as a micro centrifugal fan) is started to generate power in the circulation pipe 51. The gas is extracted from the air outlet at the bottom of the recovery cavity 50 (the side away from the wafer 1). This makes the clean gas continuously flow into the air inlet at the top of the recovery cavity 50 (the side close to the wafer 1), pass through the heat conduction member 4 and other components downward, and finally be extracted from the bottom air outlet. This design artificially creates a downward directional clean gas flow in the recovery cavity 50. The gas flow first passes through the most critical wafer 1 back area to provide a continuous positive pressure clean gas curtain, which can effectively prevent the dust generated below from rising.

[0069] The recovery cavity 50 upgrades from passively containing dust to actively capturing dust. Through the directional gas flow, the dust can be carried away before it settles and accumulates in the critical mechanical interface (such as the gap between the first heat conduction protrusion 41 and the second heat conduction protrusion 21), effectively preventing the potential interference of the dust on the thermal contact stability and rotational flexibility.

[0070] According to some embodiments of the present application, optionally, as shown in Figures 7-11The compensation mechanism 6 is also shown, and includes a plurality of compensation pieces 60, which have lower thermal conductivity than the thermal conductive pieces 4. The plurality of first grooves 40 and the plurality of second grooves 20 correspond to each other in the circumferential direction and enclose a plurality of cavities. The compensation pieces 60 are in contact with the two surfaces of the first grooves 40 and the second grooves 20 that are opposite in the thickness direction of the wafer 1.

[0071] In actual application, after the thermal conductive pieces 4 are assembled with the positioning table 2, the circumferentially corresponding first grooves 40 and the second grooves 20 are axially aligned and collectively enclose a plurality of independent cavities. The compensation pieces 60 are pre-placed or pressed into the cavities by pressure and are in contact with the upper and lower surfaces of the grooves (i.e., the two surfaces opposite in the thickness direction of the wafer 1). During system operation, heat flows downward from the positioning table 2 to the temperature control assembly 3, and at this time, there are two parallel heat flow paths: one is through the direct contact of the first thermal conductive protrusions 41 and the second thermal conductive protrusions 21, which is a high thermal conduction path; the other is through the compensation pieces 60 filled in the cavities. Since the thermal conductivity of the compensation pieces 60 is significantly lower than that of the material of the thermal conductive pieces 4, this path itself is a fixed high thermal resistance channel. When the rotational adjustment reduces the contact area between the first thermal conductive protrusions 41 and the second thermal conductive protrusions 21 to the minimum, the compensation piece 60 path can still maintain a basic heat flow path, preventing the edge region from being completely thermally isolated and avoiding the sharp loss of control of the temperature.

[0072] The presence of the compensation pieces 60 provides a reliable thermal basis for the system between the two extreme states of maximum heat dissipation and minimum heat dissipation. It prevents overheating of the edge region when extreme heat dissipation is required, and avoids thermal shock due to small contact changes when maximum heat dissipation is required, allowing the entire adjustment process to proceed smoothly within a wider and safer range. The compensation pieces 60 allow the cavities enclosed by the first grooves 40 and the second grooves 20 to have a certain thermal conductivity, avoiding a large difference in thermal conduction between the contact parts of the first thermal conductive protrusions 41 and the second thermal conductive protrusions 21 and the cavities enclosed by the first grooves 40 and the second grooves 20 when the contact area between the first thermal conductive protrusions 41 and the second thermal conductive protrusions 21 is maximum.

[0073] In specific implementation, the thermal conductivity of the compensation pieces 60 in the thickness direction can vary in a gradient, with the thermal conductivity slightly higher on the side closer to the positioning table 2 to facilitate heat conduction, and the thermal conductivity extremely low on the side closer to the thermal conductive pieces 4 to enhance the thermal resistance compensation effect.

[0074] According to some embodiments of the present application, optionally, as Figures 12-13As shown, the compensation mechanism 6 further comprises a connecting ring 61 and a plurality of positioning assemblies 62. The connecting ring 61 is sleeved outside the heat conduction member 4 and can rotate relative to the heat conduction member 4. The plurality of compensation members 60 are fixedly connected to the inner circumferential surface of the connecting ring 61. The plurality of positioning assemblies 62 are circumferentially arranged around the wafer 1 axis. The positioning assembly 62 is arranged in the cavity formed by the first groove 40 and the second groove 20 and comprises two elastic members 620. The two elastic members 620 are respectively connected to the two circumferential walls of the first groove 40 and the second groove 20 forming the cavity, and the free ends of the two elastic members 620 are both abutted against the compensation member 60. When the heat conduction member 4 rotates, the two elastic members 620 in the same cavity drive the connecting ring 61 to rotate by pushing the compensation member 60, so that the compensation member 60 remains in the center of the cavity.

[0075] The elastic member 620 mentioned in the present application can be selected from a micro-spiral spring, a disc spring or a metal spring piece with elasticity.

[0076] The number of the plurality of positioning assemblies 62 can be less than or equal to the number of the cavities formed by the first groove 40 and the second groove 20.

[0077] In actual application, after the system is assembled, the compensation member 60 is positioned at the center of each cavity formed by the first groove 40 and the second groove 20 by the action of the connecting ring 61 and the positioning assembly 62. When the control module drives the heat conduction member 4 to rotate according to the temperature difference, the heat conduction member 4 rotates relative to the fixed positioning table 2. This action causes the wall surface of the first groove 40 to start pressing the elastic member 620 on one side in the cavity. Since the free ends of the two elastic members 620 are both abutted against the fixed compensation member 60, the pressing force pushes the compensation member 60, thereby driving the entire connecting ring 61 to rotate around the shaft. The rotation of the connecting ring 61 drives all the compensation members 60 thereon to rotate synchronously. The design goal is that when the rotation of the heat conduction member 4 is adjusted to the right position, the connecting ring 61 is also rotated to a new position under the pushing of the positioning assembly 62, so that each compensation member 60 is still located at the circumferential direction center of the cavity. This process is continuous, which ensures that the compensation member 60 is always in the optimal central position during and after the adjustment.

[0078] By keeping the compensation piece 60 always in the center of the cavity, it is avoided that it comes into contact with one of the side walls of the groove or that an excessive gap is created during the adjustment. This ensures that the compensation path thermal resistance of the compensation piece 60 always remains stable and predictable, making the thermal adjustment behavior of the entire system more accurate and eliminating variables introduced by the uncertainty of the position of the compensation piece 60. The design of the connecting ring 61 links multiple independent compensation pieces 60 into a whole and flexibly connects them with the rotating heat-conducting piece 4 through the elastic piece 620. This enables the compensation piece 60 to automatically follow the adjustment action of the system, but does not rigidly hinder the rotation of the heat-conducting piece 4 or affect the contact pressure of the first heat-conducting protrusion 41 and the second heat-conducting protrusion 21. The cushioning effect of the elastic piece 620 avoids hard collision and friction between the compensation piece 60 and the groove wall, reducing wear. At the same time, keeping the compensation piece 60 centered prevents it from being damaged or failing due to long-term eccentric wear, extending the maintenance cycle and service life of the compensation mechanism 6.

[0079] According to some embodiments of the present application, as shown in Figures 3-4 As shown in the figure, the surface of the heat-conducting piece 4 towards the temperature control assembly 3 is provided with a protrusion 44, which is offset from the axis of the heat-conducting piece 4; the temperature control assembly 3 is provided with a movable slot 30 for accommodating the protrusion 44, and the movable slot 30 is provided with a driving piece; the driving piece is used to drive the protrusion 44 to rotate, and in turn drive the heat-conducting piece 4 to rotate.

[0080] The driving piece mentioned in the present application can have various implementations. For example, it can be a piezoelectric ceramic actuator that generates a small precise displacement through the inverse piezoelectric effect to push the protrusion 44; it can also be a linear motor that provides a longer stroke. It can even be a piezoelectric ultrasonic motor that directly drives the protrusion 44 to rotate through friction.

[0081] In actual application, when the control module calculates the required rotation angle according to the temperature difference between the center and the edge of the wafer 1, it will issue an instruction to the driving piece. After receiving the signal, the driving piece starts to act. It acts on the protrusion 44, and since the protrusion 44 is offset from the axis of the heat-conducting piece 4, the force exerted by the driving piece on the protrusion 44 will generate a rotational torque. This torque pushes the protrusion 44, and in turn drives the entire heat-conducting piece 4 to rotate around its axis. The protrusion 44 moves within the movable slot 30. The movable slot 30 provides a closed space for the movement of the protrusion 44 and the driving piece, and limits the movement of the heat-conducting piece 4 in the axial direction, ensuring that it can only perform rotational movement, while isolating the driving mechanism from the external environment. The driving piece (such as a piezoelectric ceramic actuator or a precise linear motor) controls the rotation angle of the protrusion 44 by controlling its displacement or stepping, thereby controlling the rotation position of the entire heat-conducting piece 4, and finally adjusting the contact area of the first heat-conducting protrusion 41 and the second heat-conducting protrusion 21.

[0082] The driving member is arranged at the bottom of the heat conducting member 4 and is driven by a protrusion 44 deviated from the axis, avoiding the direct integration of the heat source such as motor and the components that may generate dust particles with the heat conducting path, ensuring the stability of the heat flow and the cleanliness of the interface.

[0083] According to some embodiments of the present application, the flexible heat conducting material is filled in the movable groove 30.

[0084] The heat conducting material mentioned in the present application needs to have high thermal conductivity and good flexibility / compressibility. The common choices include advanced heat conducting silicone grease, heat conducting gel in rubber state after solidification or soft heat conducting pad.

[0085] In actual application, when the driving member is working, it will generate heat due to energy loss (resistance loss, mechanical friction, etc.), becoming a micro heat source. The flexible heat conducting material filled in the movable groove 30 tightly wraps the driving member and the protrusion 44. The heat conducting material efficiently conducts the heat generated by the driving member to the temperature control assembly 3, preventing the heat from accumulating locally to form hot spots. On the other hand, it also ensures that the heat from the heat conducting member 4 can be evenly distributed, avoiding local overheating. Through timely heat dissipation, the flexible heat conducting material ensures that the driving member always works within the allowable temperature range, avoiding performance degradation, precision decline or service life shortening caused by overheating. At the same time, its flexible nature ensures that it can fill the space, ensure good thermal contact, and at the same time, not hinder the micro motion or rotation of the driving member and the protrusion 44.

[0086] The heat conducting material actively conducts the parasitic heat generated by the driving mechanism and incorporates it into the management system of the temperature control assembly 3, preventing this additional heat from being transmitted upward through the heat conducting member 4, interfering with the temperature field of the wafer 1, thereby protecting the wafer 1 temperature uniformity from being destroyed by internal factors. The service life of electronic components is strongly related to the working temperature. Effective cooling significantly reduces the working temperature of the driving member, thereby prolonging its service life and improving the long-term reliability of the entire temperature control system. The flexible heat conducting material fills the gap between components and also plays a certain buffering and damping role, absorbing the slight vibration generated when the driving member acts, making the rotation of the heat conducting member 4 more stable, reducing impact and noise.

[0087] According to some embodiments of the present application, optionally, as shown in ​ the first heat conducting protrusion 41 is at least partially in contact with the second heat conducting protrusion 21.

[0088] At least partial contact as referred to in the present application specifically means that the circumferential width of the first grooves 40 and the second grooves 20, the circumferential width of the first heat-conductive protrusions 41 and the second heat-conductive protrusions 21, and the maximum allowed rotation angle of the heat-conductive member 4 must be designed such that even at the maximum adjustment angle, any first heat-conductive protrusion 41 still has partial overlap with one or more second heat-conductive protrusions 21, i.e. there is a non-zero contact area.

[0089] In actual application, no matter how the control module adjusts the rotation angle of the heat-conductive member 4, the first heat-conductive protrusions 41 and the second heat-conductive protrusions 21 always maintain at least partial contact. This means that at the edge region of the wafer 1, there is always a basic, minimum effective heat flow path consisting of direct contact. The adjustment of the controllable radiation processing temperature control system for semiconductor modification provided by the present application is not switched between full contact and full disengagement, but continuously changes between maximum contact area and minimum contact area. Even in the working condition that needs to limit the edge heat dissipation to the greatest extent, this basic heat path still exists, ensuring that there is a minimum amount of heat that can be conducted away. This design prevents the heat flow path from being completely cut off due to excessive rotation. If the heat flow is completely cut off, the wafer 1 edge temperature may rise sharply under process heat load, out of control, and cause thermal shock to the system when the next contact area needs to be increased. Maintaining at least partial contact ensures smooth, controllable and safe temperature control process.

[0090] The at least partial contact between the first heat-conductive protrusions 41 and the second heat-conductive protrusions 21 sets a safe physical lower limit for the entire dynamic adjustment process, prevents complete thermal isolation of the wafer 1 edge region, avoids uncontrolled temperature rise and possible thermal damage to the wafer 1, and improves the operation safety and process reliability of the system. A basic heat flow path that always exists makes the overall thermal conductivity curve of the system more smooth and predictable with the change of the rotation angle. This simplifies the control algorithm of the control module, making the adjustment based on temperature difference feedback more linear, which is conducive to achieving higher precision temperature stabilization. Always maintaining contact means that the relative movement between the first heat-conductive protrusions 41 and the second heat-conductive protrusions 21 is micro-motion under contact pressure, rather than repeated impact and separation. This helps to maintain the stable properties of the contact interface and reduce wear and performance degradation caused by impact and air gap.

[0091] According to some embodiments of the present application, the positioning table 2 is optionally provided with an electrostatic generating device inside for generating static electricity to adsorb the wafer 1.

[0092] In actual application, after the wafer 1 is loaded onto the positioning table 2, the electrostatic generating device is started. The device generates a strong electrostatic field between the surface of the positioning table 2 and the back surface of the wafer 1, thereby generating a Coulomb force to firmly and uniformly adsorb the wafer 1 on the bearing surface of the positioning table 2.

[0093] The electrostatic adsorption provides a strong and stable clamping force, ensures the wafer 1 and the positioning table 2 to be in close contact in a macroscopic manner, establishes an indispensable physical basis for efficient heat conduction, and prevents the wafer 1 from moving during the process (such as when subjected to air flow or mechanical vibration), which not only ensures the safety of the process, but also avoids the temperature control failure caused by the displacement of the wafer 1.

[0094] Although the present application has been described with reference to the preferred embodiments, various modifications can be made to it without departing from the scope of the present application and equivalent components can be substituted therefor. In particular, the technical features mentioned in each embodiment can be combined in any manner as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A controlled irradiation treatment temperature control system for semiconductor modification, characterized by, The system comprises: a positioning table for carrying and fixing a wafer of the semiconductor; a temperature control assembly arranged below the positioning table for temperature control thereof; a heat conducting member arranged between the positioning table and the temperature control assembly, in close contact with both and rotatable around the wafer axis; a plurality of first grooves are arranged on the edge of the heat conducting member facing the positioning table, and first heat conducting protrusions are formed between adjacent first grooves; a plurality of second grooves are arranged on the edge of the positioning table facing the heat conducting member, and second heat conducting protrusions are formed between adjacent second grooves; a sensor for detecting the temperature of the central region and the edge region of the wafer; a control module for controlling the rotation of the heat conducting member according to the temperature difference between the central region and the edge region of the wafer, so as to adjust the contact area between the first heat conducting protrusions and the second heat conducting protrusions.

2. The system according to claim 1, wherein: the heat conducting member comprises a first part and a second part arranged coaxially, the second part corresponds to the central region of the wafer, and the first part surrounds the second part and corresponds to the edge region of the wafer; the heat conducting performance of the first part is better than that of the second part; the first grooves are arranged on the first part.

3. A controllable irradiation treatment temperature control system for semiconductor modification according to claim 1, wherein Further comprising: a housing with a closed recycling cavity inside; the heat conducting member and the temperature control assembly are arranged in the recycling cavity; the surface of the positioning table in contact with the heat conducting member is located in the recycling cavity.

4. The system according to claim 3, wherein: an air outlet is arranged on the side of the recycling cavity away from the wafer, and an air inlet is arranged on the side close to the wafer, and the air outlet and the air inlet are connected by a circulation pipe; an air flow generating device is arranged in the circulation pipe for pushing the air in the recycling cavity into the circulation pipe and then returning to the recycling cavity through the circulation pipe.

5. A controllable irradiation treatment temperature control system for semiconductor modification according to claim 1, wherein Further comprising a compensation mechanism; the compensation mechanism comprises a plurality of compensation members, and the heat conducting performance of the compensation members is lower than that of the heat conducting member; the plurality of first grooves and the plurality of second grooves correspond to each other in the circumferential direction and enclose a plurality of cavities; the compensation members are in contact with the two surfaces of the first grooves and the second grooves opposite in the thickness direction of the wafer.

6. The system according to claim 5, wherein: the compensation mechanism further comprises: a connecting ring sleeved outside the heat conducting member and capable of rotating relative to the heat conducting member; the plurality of compensation members are fixedly connected to the inner circumferential surface of the connecting ring; a plurality of positioning assemblies are arranged in a circumferential array around the wafer axis; the positioning assembly is arranged in the cavity enclosed by the first grooves and the second grooves, and comprises two elastic members, the two elastic members are respectively connected to the two wall surfaces of the first grooves and the second grooves opposite in the circumferential direction, and the free ends of the two elastic members are in abutment with the compensation member. When the heat-conducting member rotates, two elastic members located in the same cavity drive the connecting ring to rotate by pushing the compensation member, so that the compensation member is kept in the center of the cavity. 7.The controllable radiation treatment temperature control system for semiconductor modification of claim 1, wherein, a surface of the heat-conducting member facing the temperature control assembly is provided with a protrusion, and the protrusion is offset from the center of the heat-conducting member; the temperature control assembly is provided with a movable slot for accommodating the protrusion, and the movable slot is provided with a driving member; the driving member is used to drive the protrusion to rotate, thereby driving the heat-conducting member to rotate. 8.The controllable radiation treatment temperature control system for semiconductor modification of claim 7, wherein, the movable slot is filled with a flexible heat-conducting material. 9.The controllable radiation treatment temperature control system for semiconductor modification of claim 1, wherein, the first heat-conducting protrusion is at least partially in contact with the second heat-conducting protrusion. 10.The controllable radiation treatment temperature control system for semiconductor modification of claim 1, wherein, the positioning table is internally provided with an electrostatic generating device for generating electrostatic to adsorb the wafer.

Images