Energy device single-particle burning pulse measurement system and method

Abstract

The invention discloses an energy device single-particle burning pulse measurement system and method, and belongs to the technical field of anti-radiation effect test and reinforcement of energy devices. The system is composed of femtosecond pulse laser equipment, a three-dimensional mobile platform, a probe station, an energy device, a direct current bias power supply, a bias and sampling network and a data acquisition module. By arranging a three-terminal current sampling branch and a drain voltage sampling branch, the system can synchronously acquire multi-parameter transient waveforms under the same trigger. According to the system design, it is ensured that real bias is kept, meanwhile, transient current is prevented from being recharged to the direct-current bias power supply, and therefore the test safety is improved, and high-fidelity transient waveform data are provided. The system has high measurement bandwidth and low distortion, can accurately measure the single-particle burning transient behavior of the energy device, and is suitable for single-particle burning mechanism research and anti-radiation evaluation of multiple types of energy devices.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of energy device anti-radiation effect test and reinforcement, and particularly relates to an energy device single event burnout pulse measurement system and method. BACKGROUND

[0002] The application of energy devices in aerospace, nuclear energy and high-reliability power electronics is expanding, and the risk of single event burnout (SEB) of energy devices under cosmic rays, fission fragments or equivalent heavy ion irradiation is increasingly concerned. The SEB process is usually accompanied by a transient pulse current with a very fast rising edge and a large amplitude, and the device may be irreversibly damaged in a very short time. In order to carry out mechanism research and reinforcement design, it is necessary to obtain high-fidelity key transient characteristics such as peak value, current / voltage rise and fall time, pulse width and energy-related quantities under real bias and controllable irradiation conditions, which puts higher requirements on the bandwidth, parasitic parameters and anti-interference design of the test link.

[0003] However, the accurate measurement of single event burnout characteristics still faces significant technical challenges, especially in capturing the generation characteristics and rules of SEE pulses before burnout. Due to the high-frequency characteristics and transient behavior of SEE pulses, existing test methods often have difficulty in accurately synchronously capturing and analyzing these pulses in terms of high-bandwidth and high-synchronism multi-parameter acquisition, resulting in limited accuracy and reliability of test results, which limits the accurate measurement and in-depth analysis of SEB characteristics. In addition, there is a contradiction between the test link in "protecting the power supply / instrument" and "maintaining the stability of the transient waveform at the device end": only relying on the remote decoupling design at the power supply end, it is difficult to form a low-resistance transient loop near the device, which may easily lead to bias collapse, or waveform broadening and ringing caused by parasitic inductance and capacitance; while adding too many series and parallel measurement branches may introduce additional parasitic loops and backflow paths, which not only affect the waveform fidelity, but also increase the impact on the power supply and the device. In addition, the traditional SEB test method relies on heavy ion beams or particle accelerators as radiation sources to trigger single event effects, and these methods face limitations such as expensive test equipment, long test period, difficult experimental conditions, and large environmental background noise. Therefore, there is an urgent need for a measurement system and method that can achieve energy buffering and high-frequency isolation near the device and synchronously acquire key parameters with high bandwidth. SUMMARY

[0004] The present application provides an energy device single event burnout pulse measurement system and method to solve the above problems in the prior art.

[0005] To achieve the above purpose, the present application provides an energy device single event burnout pulse measurement system, comprising:

[0006] A femtosecond pulse laser device for generating femtosecond pulse laser to trigger single event effect;

[0007] a three-dimensional moving platform for carrying and adjusting the position of the femtosecond pulsed laser device;

[0008] a probe station for fixing the energy device to be tested;

[0009] a DC bias power supply for providing a bias voltage for the energy device;

[0010] a bias and sampling network comprising a series inductor L1, a parallel capacitor C1, a plurality of sampling resistors and a voltage dividing resistor;

[0011] a data acquisition module connected to the sampling points of the bias and sampling network;

[0012] The series inductor L1 is connected between the DC bias power supply and the drain of the energy device, the parallel capacitor C1 is connected between the drain and source terminals of the energy device, the plurality of sampling resistors comprises a sampling resistor R4 arranged in the branch of the parallel capacitor C1, a sampling resistor R5 arranged in the source loop of the device and a sampling resistor R7 arranged in the gate loop, and the voltage dividing resistor comprises a voltage dividing resistor R2 and a voltage dividing resistor R3 connected between the drain and source terminals of the energy device.

[0013] The femtosecond pulsed laser device cooperates with the bias and sampling network to trigger single event effects by laser, and at the same time, the T-shaped biasing device formed by the series inductor L1 and the parallel capacitor C1 isolates high-frequency backflow while maintaining DC bias and providing a low-resistance transient loop.

[0014] Optionally, the bias and sampling network further comprises:

[0015] a current limiting resistor R1 connected in series between the DC bias power supply and the drain of the energy device;

[0016] a current limiting resistor R6 connected in series between the gate bias power supply and the gate of the energy device;

[0017] The current limiting resistors R1 and R6 are used to limit fault current during single event.

[0018] Optionally, the sampling resistor R4 is connected in series in the branch of the parallel capacitor C1 for collecting the current flowing through the parallel capacitor C1;

[0019] The sampling resistor R5 is connected in series in the source loop of the energy device for collecting drain-source transient current;

[0020] The sampling resistor R7 is connected in series in the gate loop of the energy device for collecting gate transient current.

[0021] Optionally, the data acquisition module takes the voltage rising edge of the sampling resistor R4 as a common trigger signal, and synchronously acquires the voltage signals of the sampling resistor R4, the sampling resistor R5, the sampling resistor R7 and the voltage dividing resistor R3 when the trigger condition is met.

[0022] Optionally, the bias and sampling network further comprises a gate-source parallel capacitor C2 connected between the gate and the source of the energy device, for forming a gate transient energy loop.

[0023] The application further provides an energy device single-particle burnout pulse measurement method, which applies the system and comprises the following steps:

[0024] The energy device to be measured is installed on a probe station and connected to the bias and sampling network through a probe;

[0025] The data acquisition module is set to be connected to the sampling points in the bias and sampling network respectively;

[0026] The femtosecond pulse laser equipment is aligned by the three-dimensional moving platform, so that the laser beam irradiates the target region of the energy device;

[0027] The energy device is applied with a voltage under the set bias condition, and the laser irradiation is started;

[0028] When the trigger signal is detected, the transient waveform data of the sampling points are synchronously acquired and recorded.

[0029] Optionally, the step of setting the data acquisition module comprises:

[0030] The data acquisition module is connected to the sampling resistor R4, the sampling resistor R5, the sampling resistor R7 and the voltage dividing resistor R3 respectively;

[0031] The voltage rising edge of the sampling resistor R4 is set as a common trigger signal.

[0032] Optionally, the step of applying the energy device with a voltage under the set bias condition comprises:

[0033] The gate bias voltage is set to make the energy device in an off state;

[0034] The drain bias voltage is gradually increased from an initial value to a target voltage value;

[0035] The consistency of the bias current and the voltage is monitored during the voltage increasing process.

[0036] Optionally, the step of synchronously acquiring and recording the transient waveform data of the sampling points comprises:

[0037] When the public trigger signal is activated, the voltage waveforms of the sampling resistor R4, the sampling resistor R5, the sampling resistor R7 and the voltage dividing resistor R3 node are recorded synchronously;

[0038] Based on the voltage waveform, the characteristic parameters of the single event burnout pulse are extracted.

[0039] Optionally, the following steps are further included:

[0040] After the single event burnout event collection is completed, the energy device to be tested is replaced;

[0041] The bias voltage or laser energy parameter is adjusted;

[0042] The measurement process is repeatedly executed to establish a waveform database under different test conditions.

[0043] Compared with the prior art, the present application has the following advantages and technical effects:

[0044] In view of the contradiction between the existing test link in the "protect the power supply / instrument" and "ensure the stability of the bias and maintain the original appearance of the device end transient waveform as much as possible", the T-type biasing device in the system of the present application maintains the DC operating point while suppressing high-frequency backflow and providing a low-resistance transient loop for the drain, and takes into account both power supply protection and waveform fidelity.

[0045] The present application uses laser instead of traditional heavy ion irradiation source, significantly reduces electromagnetic interference, and ensures the accuracy of the waveform during the experiment. And there is no need to change the peripheral circuit many times during the experiment, and the probe station can quickly and conveniently test different devices, and different groups of experiments can be carried out by changing the bias voltage, which can adapt to multiple types of energy devices and different bias working conditions, greatly improving the universality and flexibility of the experiment.

[0046] The present application is based on the quantitative index and threshold determination process of the collected waveform, uses the sampling resistor R4 channel as the public trigger, realizes the synchronous collection and time alignment of "three currents and one voltage", facilitates the mechanism analysis and threshold criterion extraction, and can quickly obtain the SEB threshold distribution, thereby providing data support for device selection, reinforcement design and irradiation application. BRIEF DESCRIPTION OF DRAWINGS

[0047] The accompanying drawings, which form a part of this application, are included to provide a further understanding of the application and are incorporated herein for purposes of illustration. The embodiments of the present application illustrated in the drawings are intended to explain the present application and are not intended to limit the present application. In the drawings:

[0048] Figure 1 The accompanying drawings, which form a part of this application, are included to provide a further understanding of the application and are incorporated herein for purposes of illustration. The embodiments of the present application illustrated in the drawings are intended to explain the present application and are not intended to limit the present application. In the drawings:

[0049] Figure 2 The accompanying drawings, which form a part of this application, are included to provide a further understanding of the application and are incorporated herein for purposes of illustration. The embodiments of the present application illustrated in the drawings are intended to explain the present application and are not intended to limit the present application. In the drawings:

[0050] Figure 3 This is a test flowchart of an embodiment of the present invention. Detailed Implementation

[0051] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0052] It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although a logical order is shown in the flowchart, in some cases the steps shown or described may be executed in a different order than that shown here.

[0053] Example 1:

[0054] like Figure 1 As shown, this embodiment provides a single-event burn-out pulse measurement system for energy devices, including:

[0055] Femtosecond pulsed laser equipment is used to generate femtosecond pulsed lasers to trigger single-event effects;

[0056] A three-dimensional moving platform is used to support and adjust the position of the femtosecond pulse laser device;

[0057] A probe station is used to hold the energy device under test.

[0058] A DC bias power supply is used to provide bias voltage for energy devices;

[0059] The bias and sampling network includes a series inductor L1, a parallel capacitor C1, several sampling resistors, and voltage divider resistors;

[0060] The data acquisition module is connected to the sampling points of the bias and sampling network;

[0061] Wherein, the series inductor L1 is connected between the DC bias power supply and the drain of the power device, the parallel capacitor C1 is connected to the drain-source port of the power device, the plurality of sampling resistors include sampling resistor R4 set in the branch of parallel capacitor C1, sampling resistor R5 set in the source circuit of the device and sampling resistor R7 set in the gate circuit, and the voltage divider resistors include voltage divider resistor R2 and voltage divider resistor R3 connected between the drain and source of the power device;

[0062] The femtosecond pulsed laser device works in conjunction with the bias and sampling network. It triggers the single-event effect through laser, and at the same time uses a T-type bias circuit composed of series inductor L1 and parallel capacitor C1 to maintain DC bias while isolating high-frequency backflow and providing a low-impedance transient circuit.

[0063] Furthermore, the bias and sampling network also includes:

[0064] The current-limiting resistor R1 is connected in series between the DC bias power supply and the drain of the power device;

[0065] The current-limiting resistor R6 is connected in series between the gate bias power supply and the gate of the power device.

[0066] The current-limiting resistors R1 and R6 are used to limit the fault current during a single-event event.

[0067] Furthermore, the sampling resistor R4 is connected in series in the parallel capacitor C1 branch to collect the current flowing through the parallel capacitor C1;

[0068] The sampling resistor R5 is connected in series in the source circuit of the energy device to collect the drain-source transient current;

[0069] The sampling resistor R7 is connected in series in the gate circuit of the energy device to collect the gate transient current.

[0070] Furthermore, the data acquisition module uses the rising edge of the voltage of the sampling resistor R4 as a common trigger signal. When the trigger condition is met, it synchronously acquires the voltage signals of the nodes of sampling resistor R4, sampling resistor R5, sampling resistor R7 and voltage divider resistor R3.

[0071] Furthermore, the bias and sampling network also includes a gate-source parallel capacitor C2, connected between the gate and source of the energy device, to form a gate transient energy loop.

[0072] Based on the above system, this embodiment also provides a method for measuring single-event burn-out pulses of energy devices, the steps of which are as follows:

[0073] The power device (bare die or pre-packaged device) is clamped onto the probe station and connected to the bias and sampling network circuit board via probes to complete cleaning and lead inspection.

[0074] The data acquisition module is connected across sampling resistor R4 (C1 branch current), sampling resistor R5 (device drain-source current), sampling resistor R7 (gate current) and voltage divider resistor R3 (drain voltage divider node). The rising edge of the channel voltage of sampling resistor R4 is set as a common trigger, and the sampling parameters are set.

[0075] Alignment is performed using a laser 3D platform to ensure that the laser accurately irradiates the target area of ​​the device in order to trigger the single-event effect;

[0076] Power on and operate according to the predetermined bias conditions and irradiation parameters of the laser equipment;

[0077] When the trigger arrives, the transient waveforms of the current and voltage mentioned above are recorded simultaneously, and the peak value, rise / fall time, pulse width and other indicators are extracted. If necessary, the experiment can be repeated under different gate voltage, drain voltage or different laser energy conditions.

[0078] Furthermore, the three-dimensional moving platform is used to align the laser beam and adjust the position of the device under test in the single-particle burn-out pulse measurement system for energy devices. The platform can independently and accurately adjust its position in the XYZ directions, with a positioning accuracy within 0.01mm, to ensure that the laser beam can accurately irradiate the specified position on the surface of the energy device.

[0079] Furthermore, the pulse width of the femtosecond pulsed laser device ranges from 200 fs to 300 fs, and the pulse energy is adjustable between 100 pJ and 20 nJ to meet the needs of single-particle burn-off experiments for different devices.

[0080] Furthermore, the energy devices are wide bandgap energy devices such as silicon carbide MOSFETs, insulated gate bipolar transistors (IGBTs), and GaN high electron mobility transistors. During the test, bias voltages are applied to the gate and source, and the devices are in the off state to ensure that the drain current directly reflects the single-event effect.

[0081] Furthermore, the T-type bias circuit meets the following parameters and arrangement conditions: the inductive reactance of the series inductor L1 is greater than the equivalent resistance of the circuit to form high-frequency isolation for the bias power supply; the equivalent series impedance of the parallel capacitor C1 is lower than the equivalent impedance of the power device terminal to form a low-impedance transient circuit near the end; and the self-resonant frequencies of both the series inductor L1 and the parallel capacitor C1 are higher than the upper limit of the data acquisition bandwidth.

[0082] Furthermore, the data acquisition module is equipped with a trigger function. The trigger signal comes from the rising edge of the voltage of the sampling resistor R4, which is used to start high-speed acquisition when a single-particle burn-out pulse occurs. When the level of the sampling resistor R4 is triggered, the waveform data at the voltage divider resistor R3, the sampling resistor R4, the sampling resistor R5, and the sampling resistor R7 are recorded and stored simultaneously for subsequent experimental analysis.

[0083] Furthermore, the drain voltage of the energy device is adjustable between 0 and 1500V to study the single-particle burn-off threshold characteristics under different bias voltages.

[0084] Furthermore, after completing the single-particle burn-up event acquisition, the energy device under test is replaced;

[0085] Adjust the bias voltage or laser energy parameters;

[0086] Repeat the measurement process to establish a waveform database under different test conditions.

[0087] Example 2:

[0088] like Figure 1 As shown, this embodiment provides a single-event burn-out pulse measurement system for energy devices, which is suitable for testing the single-event burn-out characteristics of wide bandgap energy devices such as silicon carbide MOSFETs, insulated gate bipolar transistors, and GaN high electron mobility transistors in the off state. The system includes a femtosecond pulse laser device, a three-dimensional moving platform, a probe station, energy devices, a DC bias power supply, a bias and sampling network, and a data acquisition module.

[0089] The power devices are either bare dies or pre-packaged devices, placed on a probe stage, and connected to the bias and sampling network circuit board via probes;

[0090] The bias and sampling network includes an integrated T-type biaser, a device current sampling branch, and a drain voltage divider sampling branch;

[0091] The integrated T-type biaser consists of a series inductor L1 located between the DC bias power supply and the drain of the power device, and a parallel capacitor C1 connected in parallel to the port of the power device. The series inductor L1 is used to isolate high-frequency transient components while providing DC bias and to limit the return of transient pulse current generated by single-event events to the power supply to protect the power supply. The parallel capacitor C1 is used to provide a low-resistance transient current loop to the drain when an event occurs to maintain the true bias of the device.

[0092] The device current sampling branch is used to collect the relevant currents at the three terminals of the power device, including sampling resistor R4 set in the parallel capacitor C1 branch, sampling resistor R5 connected in series in the device circuit, and sampling resistor R7 connected in series in the gate circuit, which are used to obtain the current flowing through the parallel capacitor C1 (characterizing the drain transient current), the device drain-source transient current and the gate transient current, respectively.

[0093] The drain voltage divider sampling branch is used to obtain the magnitude of the drain bias voltage. It consists of a voltage divider network formed by voltage divider resistors R2 and R3, and its voltage divider node is connected to the data acquisition module.

[0094] The bias and sampling network also includes current-limiting resistors R1 and R6 for current-limiting protection, wherein current-limiting resistor R1 is arranged in the drain bias path and current-limiting resistor R6 is arranged in the gate bias path, for limiting fault current and protecting their respective bias power supplies and measurement links during a single event.

[0095] The data acquisition module includes a high-speed oscilloscope or a high-speed ADC connected in parallel with sampling resistors R4, R5, R7, and voltage divider resistor R3. Based on the rising edge of the voltage of sampling resistor R4 as a common trigger, it realizes the synchronous acquisition and recording of transient current (characterizing drain transient current), device drain-source transient current, gate transient current, and drain voltage flowing through parallel capacitor C1. This is used to obtain the time-domain waveform of single-event burn-out pulse current so as to perform correlation analysis on the three-terminal transient behavior of energy devices.

[0096] Based on the above system, the following experiment was conducted in this embodiment:

[0097] During the experiment, the bare die or the already packaged energy device is fixed on the probe station fixture, and the probe is used to connect the energy device to the bias and sampling network circuit board. The three-dimensional moving platform is controlled by a computer, and the position of the XYZ coordinate axis of the platform is adjusted to ensure that the laser beam can accurately irradiate the target area of ​​the device, so as to ensure that the radiation source reaches the epitaxial layer and effectively triggers a single-event event. The DC bias power supply provides programmable drain-source and gate-source bias voltages and has current limiting protection.

[0098] The biasing and sampling network consists of an integrated T-type biaser, a device current sampling branch, and a drain voltage divider sampling branch. The T-type biaser employs an integrated structure: a series inductor L1 is connected between the power supply and drain, providing isolation from high-frequency transients generated by SEB and limiting backflow to protect the power supply; a parallel capacitor C1 is connected in parallel at the device drain-source port, forming a low-impedance transient loop during events, stabilizing the port voltage and preserving waveform fidelity. For near-end current sampling, a sampling resistor R4 is connected in series in the parallel capacitor C1 branch. The voltage across R4 represents the current flowing through the parallel capacitor C1, i.e., the drain transient current, and also serves as a common trigger source. The selection range of the sampling resistor R4 should be determined based on the device's operating characteristics and measurement requirements, typically between 0.05Ω and 0.1Ω, to ensure high-accuracy current measurement and avoid placing excessive additional load on the system. The selection of series inductor L1 and parallel capacitor C1 satisfies the condition that "the inductive reactance of series inductor L1 in the main frequency band of SEB is higher than the equivalent resistance of the circuit, the equivalent series impedance of parallel capacitor C1 is lower than the equivalent impedance of the device end, and the self-resonant frequency of both is higher than the upper limit of the acquisition bandwidth".

[0099] The device current sampling branch is used for synchronous measurement of the three-terminal current: sampling resistor R5 is connected in series in the source circuit to acquire the drain-source transient current; sampling resistor R7 is connected in series in the gate circuit to acquire the gate transient current; and gate-source parallel capacitor C2 forms a transient energy loop. Current-limiting resistors R1 (drain) and R6 (gate) act as current-limiting elements in the bias path, protecting the power supply and measurement link during events. The selection of sampling resistors R5, R7, R1, and R6 should be optimized based on the system bandwidth requirements, current measurement accuracy, and power supply protection needs to ensure a balance between high-precision measurement and power supply protection. The selection of gate-source parallel capacitor C2 should be adjusted based on the response speed of the transient energy loop and the system bandwidth to ensure good transient response. The drain bias current can be monitored online using an ammeter.

[0100] The drain voltage sampling branch uses voltage divider resistors R2 and R3 to form a voltage divider network between the drain and source. The voltage divider node is connected to the data acquisition module to obtain the drain voltage. The resistance values ​​of voltage divider resistors R2 and R3 should be selected according to the test requirements and the voltage division ratio. Generally, higher resistance values ​​are used to ensure safety.

[0101] The data acquisition module is a high-speed oscilloscope or a high-speed ADC, connected across sampling resistors R4, R5, and R7, and voltage divider resistor R3. Synchronous acquisition under a unified time base of "three currents + one voltage" is achieved using the rising edge of the voltage across sampling resistor R4 as a common trigger. The single-channel bandwidth of the data acquisition module is no less than 1 GHz, the sampling rate is no less than 4 GSa / s, the trigger threshold is set to 5–8 times the RMS value of channel R4, and the recording window is set to 10–20 ns.

[0102] A method for measuring single-particle burn-out pulses in energy devices, such as Figure 3 As shown, the steps are as follows:

[0103] Step 1: Sample Preparation and Alignment. After opening the sample package, remove surface impurities and clean it with appropriate solvents and detergents to ensure the device surface is dry and free of dust. Clamp the device in the fixture on the probe stage, connect the device to the bias and sampling network circuit board through the probes, fix the sample with the locking mechanism, and record the geometric parameters.

[0104] Step 2: System Connection and Initial Check. Press Figure 2 Complete the system connection. Use single-point grounding to check the continuity of grounding and shielding, and record the voltage division ratio and test system component data.

[0105] Step 3: Oscilloscope acquisition settings. Connect the high-speed oscilloscope across sampling resistors R4, R5, and R7, and voltage divider resistor R3; set the rising edge of the voltage of the sampling resistor R4 channel as a common trigger, set the trigger threshold to 5 to 8 times the rms of the sampling resistor R4 channel, and set the recording window to 10 to 20 ns.

[0106] Step 4: Laser Alignment and Parameter Verification. The computer program controls the precise movement of the 3D moving platform along the XYZ axes to ensure the laser beam accurately illuminates the designated target area of ​​the device, thereby stimulating the single-event effect; then, the range and bandwidth settings of all oscilloscope channels are verified.

[0107] Step 5: Bias Power-On and Passive Pre-test. Turn on the ammeter to collect the device drain bias current; set the device gate bias voltage to a predetermined value, and slowly increase the drain bias power supply voltage from 0V to the preset target level, maintaining this position for a certain period to perform a passive pre-test (the laser is turned off during this time). During this period, verify the consistency of the readings at the device and power supply terminals using a voltage divider network to confirm that the system has not experienced false triggering or power frequency coupling. Subsequently, gradually increase the voltage to the upper limit level of the experiment using a reasonable stepping method, and repeat the pre-test step by step to ensure system stability and verify whether the parameters during the test process are consistent and normal.

[0108] Step 6: Turn on the laser and trigger acquisition. After ensuring the bias voltage is stable and the range settings of each channel are correct, turn on the laser irradiation source and start the experiment according to the predetermined laser energy settings. At this time, ensure that the laser energy and the scanning area of ​​the laser beam are adjusted to meet the experimental requirements. When the voltage of the sampling resistor R4 channel exceeds the set threshold, trigger the recording of the waveforms and timestamps of the voltage divider resistor R3, sampling resistor R5, and sampling resistor R7 channels. If the SEB event is not triggered after the area scan is completed, increase the laser energy and repeat the scan test.

[0109] Step 7: Device Replacement and Repeat Testing. After each SEB event is triggered, immediately shut down the laser source to stop irradiation, turn off the bias power supply, and save the relevant data. Replace the device and repeat steps 1-6 as planned to test the device performance under different bias points or laser energy conditions. After each test, save the recorded data and waveforms to form a batch of threshold and waveform databases.

[0110] Step 8: Data Analysis and Feature Extraction. After testing, computer scripts are used to process the acquired data, including baseline subtraction, peak detection, rise and fall time calculation, full width at half maximum (FWHM) analysis, and numerical integration within the event window (approximately converted to total charge). By establishing a device database, the SEB response characteristics under different bias voltages and laser energies can be analyzed in depth, providing reliable support for device selection, optimization design, and irradiation applications.

[0111] Step 9: Power off and archive data. After testing, power off and disassemble the sample to complete the visual inspection of the testing system and data archiving.

[0112] The present invention has the following advantages:

[0113] This invention employs a collaborative design of femtosecond pulsed laser and integrated T-type biaser to achieve high-frequency isolation and low-impedance transient circuitry while maintaining true device bias, effectively resolving the contradiction between power supply protection and waveform fidelity in traditional testing. By using the rising edge of the voltage across the sampling resistor in branch C1 as a common trigger signal, synchronous acquisition of three currents and one voltage under the same time base is achieved, providing complete data support for the correlation analysis of multi-parameter transient behavior. Through an optimized near-end energy buffer and current-limiting protection architecture, high measurement bandwidth and low distortion are ensured while providing dual protection for the bias power supply and the device under test, significantly improving the safety and reliability of the test.

[0114] The above are merely preferred embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A single-particle burn-out pulse measurement system for energy devices, characterized in that, include: Femtosecond pulsed laser equipment is used to generate femtosecond pulsed lasers to trigger single-event effects; A three-dimensional moving platform is used to support and adjust the position of the femtosecond pulse laser device; A probe station is used to hold the energy device under test. A DC bias power supply is used to provide bias voltage for energy devices; The bias and sampling network includes a series inductor L1, a parallel capacitor C1, several sampling resistors, and voltage divider resistors; The data acquisition module is connected to the sampling points of the bias and sampling network; Wherein, the series inductor L1 is connected between the DC bias power supply and the drain of the power device, the parallel capacitor C1 is connected to the drain-source port of the power device, the plurality of sampling resistors include sampling resistor R4 set in the branch of parallel capacitor C1, sampling resistor R5 set in the source circuit of the device and sampling resistor R7 set in the gate circuit, and the voltage divider resistors include voltage divider resistor R2 and voltage divider resistor R3 connected between the drain and source of the power device; The femtosecond pulsed laser device works in conjunction with the bias and sampling network. It triggers the single-event effect through laser, and at the same time uses a T-type bias circuit composed of series inductor L1 and parallel capacitor C1 to maintain DC bias while isolating high-frequency backflow and providing a low-impedance transient circuit.

2. The system according to claim 1, characterized in that, The bias and sampling network also includes: The current-limiting resistor R1 is connected in series between the DC bias power supply and the drain of the power device; The current-limiting resistor R6 is connected in series between the gate bias power supply and the gate of the power device. The current-limiting resistors R1 and R6 are used to limit the fault current during a single-event event.

3. The system according to claim 1, characterized in that: The sampling resistor R4 is connected in series in the parallel capacitor C1 branch to collect the current flowing through the parallel capacitor C1; The sampling resistor R5 is connected in series in the source circuit of the energy device to collect the drain-source transient current; The sampling resistor R7 is connected in series in the gate circuit of the energy device to collect the gate transient current.

4. The system according to claim 3, characterized in that, The data acquisition module uses the rising edge of the voltage of sampling resistor R4 as a common trigger signal. When the trigger condition is met, it synchronously acquires the voltage signals of the nodes of sampling resistor R4, sampling resistor R5, sampling resistor R7 and voltage divider resistor R3.

5. The system according to claim 1, characterized in that, The bias and sampling network also includes a gate-source parallel capacitor C2, which is connected between the gate and source of the energy device to form a gate transient energy loop.

6. A method for measuring single-event burn-out pulses in energy devices, using the system described in any one of claims 1-5, characterized in that, Includes the following steps: The energy device under test is mounted on the probe station, and the probe is used to connect it and the bias to the sampling network. Configure the data acquisition module to connect to the sampling points in the bias and sampling network; The femtosecond pulse laser device is aligned using a three-dimensional moving platform, so that the laser beam irradiates the target area of ​​the energy device. A voltage is applied to the energy device under a set bias condition, and laser irradiation is initiated; When a trigger signal is detected, the transient waveform data of the sampling point is synchronously acquired and recorded.

7. The method according to claim 6, characterized in that, The steps for setting up the data acquisition module include: Connect the data acquisition module to the sampling resistors R4, R5, R7, and R3 respectively; Set the rising edge of the voltage across the sampling resistor R4 as the common trigger signal.

8. The method according to claim 6, characterized in that, The step of applying voltage to the energy device under a set bias condition includes: Set the gate bias voltage to put the energy device in the off state; The drain bias voltage is gradually increased from the initial value to the target voltage value; Monitor the consistency between bias current and voltage during voltage rise.

9. The method according to claim 6, characterized in that, The steps for synchronously acquiring and recording transient waveform data at sampling points include: When the common trigger signal is activated, the voltage waveforms at the nodes of sampling resistor R4, sampling resistor R5, sampling resistor R7 and voltage divider resistor R3 are recorded synchronously. Feature parameters of the single-particle burn-out pulse are extracted based on the voltage waveform.

10. The method according to claim 9, characterized in that, It also includes the following steps: After completing the single-particle burn-up event acquisition, replace the energy device under test; Adjust the bias voltage or laser energy parameters; Repeat the measurement process to establish a waveform database under different test conditions.

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