Method for manufacturing diamond substrate or group III-V material substrate for microelectronic applications

Abstract

The present invention relates to a method of manufacturing a diamond substrate or a substrate of group III-V material for microelectronic applications, the method comprising: bonding a plurality of blocks (20) of single crystal diamond or single crystal group III-V material onto a support substrate (1), each block being spaced from an adjacent block, thereby exposing a lateral surface of each block (S2); epitaxially growing a diamond or group III-V material starting from the lateral surface and the upper surface of each block until a continuous layer (2) of single crystal diamond or single crystal group III-V material extending over the plurality of blocks (20) is formed; forming a weakened region (21) in the continuous layer of single crystal diamond or single crystal group III-V material (2) by implanting atomic entities to define a surface layer (22) to be transferred; bonding the single crystal diamond continuous layer or the single crystal III-V group material continuous layer (2) to a receiving substrate (3); the continuous layer of single crystal diamond or the continuous layer of single crystal III-V material (2) is separated along the weakened region (21), thereby transferring the surface layer of single crystal diamond or single crystal III-V material (22) onto a receiving substrate (3) to form a diamond substrate or a substrate of III-V material.

Description

TECHNICAL FIELD

[0001] The present invention relates to a manufacturing method of a diamond or III-V material substrate for microelectronic applications, in particular power applications. BACKGROUND

[0002] Diamond is receiving increasing interest for microelectronic applications, in particular power applications.

[0003] This is because the thermal conductivity of diamond can reach 2200 W / K / m (i.e. 5 times the thermal conductivity of copper), which makes it particularly advantageous in performing the function of a heat sink.

[0004] In addition, by virtue of a very wide bandgap, a high breakdown voltage, a low threshold voltage and a high charge carrier mobility, diamond can also be considered as an ideal material for power electronics.

[0005] Thus, higher currents and voltages can be applied to a diamond substrate than to other materials with a wide bandgap, with greater efficiency and speed, without the need for a cooling system.

[0006] However, one obstacle encountered in the manufacture of monocrystalline diamond substrates is the formation of dislocations, which create energy levels in the bandgap, thereby affecting the electronic properties.

[0007] In order to use diamond substrates in power electronics, it is necessary to dope them, obtain a low dislocation density and make them compatible in size with microelectronic devices, which are currently adapted to substrates with a diameter of 150 mm, 200 mm or 300 mm.

[0008] A process has been described for reducing the dislocation density in diamond substrates by diamond epitaxial lateral overgrowth (known by the term ELOG, which is an acronym for the English term "Epitaxial Lateral OverGrowth").

[0009] Thus, document WO2014 / 045220 describes a method of processing a diamond single crystal, comprising etching the single crystal surface in a region having a high dislocation density, forming metal islands on the etched region and diamond epitaxial regrowth in a region having a low dislocation density. The metal islands can stop dislocations and prevent them from propagating in the diamond epitaxial layer.

[0010] Document US2012 / 0214856 describes a process in which a bulk of monocrystalline diamond is deposited on a diamond support substrate of greater size and of lower crystal quality, and the lattices of the substrate and the bulk are aligned, a metal mask is deposited on the surface of the support substrate to promote diamond epitaxial growth from the lateral surface of the bulk, and then diamond epitaxial regrowth is performed.

[0011] However, these processes have the drawback of being limited on the one hand to small diameter substrates, smaller than the diameters required for microelectronics devices, and on the other hand involve the presence of metals which can contaminate the surface of the substrate, thus being incompatible with the microelectronics contamination requirements.

[0012] The dislocation density obtained by these processes is of the order of 10 5 cm - 2, which remains to be improved.

[0013] To tend towards a dislocation density lower than 10 4 cm - 2, other processes also promote epitaxial lateral overgrowth, but based on the formation of grooves and reliefs in the starting diamond substrate.

[0014] The document FR3022563 proposes to form grooves and reliefs on the starting substrate by successive etching stages: first, a slight etching of the surface is performed to reveal work-hardened regions with a high dislocation density, the high quality regions (corresponding to reliefs) are masked with a photoresist, then a deep etching is performed in the grooves. Epitaxial lateral overgrowth is subsequently promoted starting from these grooves.

[0015] The document FR3038917 proposes to make vias in the center of the diamond single crystal to promote lateral growth, thus inhibiting dislocation propagation. This process involves a growth and coalescence stage of the diamond located above the vias, which is the area where the best crystal quality is obtained.

[0016] However, even if the metal contamination is avoided, these processes are limited by the small size and the high cost of the starting substrate.

[0017] Since III-V materials (such as gallium nitride (GaN), indium phosphide (InP) or gallium arsenide (GaAs)) are supplied in the form of small diameter substrates, the above problems also exist for the manufacture of III-V material substrates. SUMMARY

[0018] It is therefore an object of the present invention to design a method for manufacturing a diamond substrate or a III-V material substrate, whose crystal quality and size are suitable for microelectronics, in particular for power applications.

[0019] To this end, the present invention provides a method for manufacturing a diamond substrate or a III-V material substrate for microelectronics applications, comprising: - bonding a plurality of blocks of monocrystalline diamond or monocrystalline III-V material to a support substrate, each block being spaced apart from the adjacent blocks, thereby exposing a lateral surface of each block, - epitaxially growing diamond or III-V material starting from the lateral surface and the upper surface of each block, until a continuous layer of monocrystalline diamond or a continuous layer of monocrystalline III-V material extending over the plurality of blocks is formed, - forming a weakened region in a monocrystalline diamond continuous layer or a monocrystalline III-V material continuous layer by implanting atomic species to define a surface layer to be transferred, - bonding the monocrystalline diamond continuous layer or the monocrystalline III-V material continuous layer to a receiving substrate, - separating the monocrystalline diamond continuous layer or the monocrystalline III-V material continuous layer along the weakened region, thereby transferring the monocrystalline diamond surface layer or the monocrystalline III-V material surface layer onto the receiving substrate to form said diamond substrate or said III-V material substrate.

[0020] The use of bulk of monocrystalline diamond or III-V material makes it possible to get rid of the size limitations of diamond or III-V material substrates on the market, while being able to form substrates of a size compatible with microelectronics applications, the size of the substrates being determined by the size of the support substrate and / or the receiving substrate.

[0021] Furthermore, this method avoids the use of metals that can contaminate the surface of the diamond or III-V material substrate, thereby making it possible to meet the requirements of microelectronics in terms of contamination.

[0022] Finally, the support substrate and the whole of the remaining monocrystalline diamond continuous layer or III-V material continuous layer can be recycled for forming new diamond or III-V material substrates, which makes this method advantageous from an economic point of view.

[0023] It is particularly advantageous for the method to further comprise, after forming the continuous layer on the plurality of bulk, a sequence comprising in succession: - polishing said continuous layer, - etching the polished surface of said continuous layer a first time to reveal regions having a higher density of crystal defects, these regions being located opposite the bulk, - depositing a photoresist mask on the surface of said continuous layer to mask the unetched regions, - etching the regions exposed by the mask a second time, deeper than the first etching, - lateral epitaxial regrowth starting from the walls of the etched regions.

[0024] In some embodiments, said sequence is repeated at least once.

[0025] In particular, said sequence is advantageously repeated as many times as necessary to obtain a dislocation density of less than or equal to 10 4 cm - in the monocrystalline diamond continuous layer or the monocrystalline III-V material layer.

[0026] The monocrystalline diamond continuous layer or the monocrystalline III-V material continuous layer generally has a thickness greater than or equal to 1 micrometer.

[0027] The monocrystalline diamond surface layer or the monocrystalline III-V material surface layer transferred onto the receiving substrate generally has a thickness between 100 nanometers and 1 micrometer.

[0028] It is particularly advantageous for the distance between two adjacent blocks to be between 300 micrometers and 2 centimeters, preferably between 500 micrometers and 2.5 millimeters.

[0029] Each block can have a width between 3 millimeters and 2 centimeters.

[0030] The receiving substrate and / or the support substrate advantageously has a diameter greater than 100 millimeters.

[0031] The receiving substrate and / or the support substrate comprises silicon, silicon carbide, sapphire or quartz.

[0032] In some embodiments, the plurality of blocks of monocrystalline diamond or monocrystalline III-V material is formed by a chemical vapor deposition process.

[0033] The method can also comprise, after transferring the monocrystalline diamond surface layer or the monocrystalline III-V material surface layer onto the receiving substrate: - polishing the remaining part of the continuous layer of monocrystalline diamond or of monocrystalline III-V material extending over the plurality of blocks; - forming a weakened area in the continuous layer of monocrystalline diamond or of monocrystalline III-V material by implanting atomic entities to define a new surface layer to be transferred, - bonding the continuous layer of monocrystalline diamond or of monocrystalline III-V material to a new receiving substrate, - separating the continuous layer of monocrystalline diamond or of monocrystalline III-V material along the weakened area, thereby transferring a new surface layer of monocrystalline diamond or of monocrystalline III-V material onto the new receiving substrate to form a new diamond substrate or a new III-V material substrate.

[0034] Optionally, between polishing the remaining part of the continuous layer of monocrystalline diamond or of monocrystalline III-V material and forming the weakened area, an epitaxial regrowth of diamond or an epitaxial growth of III-V material can be implemented to thicken said continuous layer of monocrystalline diamond or of monocrystalline III-V material. BRIEF DESCRIPTION OF DRAWINGS

[0035] Other features and advantages of the invention will appear from the following detailed description, made with reference to the drawings, in which: Figure 1 is a schematic cross-sectional view of the bonding of a block of monocrystalline diamond or of III-V material to a support substrate; Figures 2A to 2Cis a schematic cross-sectional view of the epitaxial growth of diamond or III-V material from the lateral surface and the upper surface of a bulk to form a continuous layer of single crystal diamond or a continuous layer of III-V material on the bulk; Figure 3 is a schematic cross-sectional view of the formation of a weakened region in the continuous layer of single crystal diamond or the continuous layer of III-V material; Figure 4 is a schematic cross-sectional view of the bonding of the continuous layer of single crystal diamond or the continuous layer of III-V material to a receiving substrate; Figure 5 is a schematic cross-sectional view of the separation of the continuous layer of single crystal diamond or the continuous layer of III-V material along the weakened region; Figure 6 is a schematic cross-sectional view of the remaining portion of the continuous layer of single crystal diamond or the continuous layer of III-V material on the support substrate after separation; Figure 7 is a schematic cross-sectional view of the new epitaxial growth of diamond or III-V material on the remaining portion of the continuous layer of single crystal diamond or the continuous layer of III-V material after separation; Figure 8A is a schematic cross-sectional view of the result of a first etching of the surface of the continuous layer of single crystal diamond or the continuous layer of III-V material; Figure 8B is a schematic cross-sectional view of the deposition of a mask on the continuous layer of single crystal diamond or the continuous layer of III-V material; Figure 8C is a schematic cross-sectional view of the result of a second etching of the surface of the continuous layer of single crystal diamond or the continuous layer of III-V material through the mask; Figure 8D is a schematic cross-sectional view of the epitaxial regrowth of diamond or III-V material on the etched surface of the continuous layer of single crystal diamond or the continuous layer of III-V material.

[0036] The elements of the figures are not necessarily drawn to scale for the sake of clarity. The same reference numbers in different figures represent elements or elements performing the same function. DETAILED DESCRIPTION

[0037] The present invention proposes to use a bulk of single crystal diamond or single crystal III-V material to form a continuous layer of high quality diamond or a continuous layer of III-V material compatible with microelectronic environments on a substrate of suitable dimensions for the intended use.

[0038] To this end, as Figure 1As shown, multiple blocks 20 of diamond or group III-V material are arranged on a support substrate 1. For simplicity, diamond will be referred to below, but this description is equally applicable to any group III-V material, whether binary, ternary, or other more complex alloy types. For example, the group III-V material may be gallium nitride (GaN), indium phosphide (InP), or gallium arsenide (GaAs).

[0039] These blocks are taken from single-crystal diamond donor substrates. For example, these blocks are cut from the donor substrate by any suitable means, such as sawing, lasers, water jets, etc.

[0040] These blocks advantageously have a thickness e equal to the thickness of the donor substrate. For example, diamond substrates with thicknesses between 0.3 and 2 mm are commercially available, but any other thickness may also be applicable.

[0041] These blocks can advantageously be rectangular or square, but any other shape is also acceptable. One advantage of rectangular or square shapes is that blocks can be placed with their edges parallel to each other, thus ensuring a constant distance between the blocks.

[0042] The width of the bulk (i.e., the main dimension in a plane perpendicular to the surface of the support substrate) is chosen to facilitate the manipulation of the bulk and its transfer from the donor substrate to the carrier substrate, while also providing a trade-off between the surface area on the support substrate covered by the bulk and the surface area on the sides of the bulk available for epitaxial lateral growth. Therefore, the width L of the bulk can be between 3 mm and 2 cm.

[0043] The support substrate acts as a mechanical support for the bulk, especially during the epitaxial regrowth and etching stages, which will be described below.

[0044] For this purpose, the support substrate advantageously has a coefficient of thermal expansion (CTE) close to that of the diamond forming the bulk. “Close” means that the coefficient of thermal expansion of the support substrate ensures that no mechanical stress is generated in the layer during the cooling process following the formation of the epitaxial continuous diamond layer starting from the bulk.

[0045] Advantageously, the support substrate has a diameter suitable for the requirements of power microelectronic devices, typically greater than 100 mm. Preferably, the diameter of the support substrate is about 150 mm, 200 mm, or 300 mm. The diameter of the support substrate is typically larger than the diameter of the donor substrate.

[0046] Silicon is a particularly suitable material for forming support substrates. This is because it has a coefficient of thermal expansion compatible with diamond and some group III-V materials, and it can be obtained in the form of large-diameter substrates, making it particularly suitable for microelectronic devices. However, those skilled in the art will be able to use any other suitable material for support substrates, such as silicon carbide (SiC), sapphire, or quartz, in single-crystal or polycrystalline form.

[0047] Preferably, the bulk material is disposed directly on the support substrate and adhered thereto by molecular adhesion, but alternatively an intermediate bonding layer may be used.

[0048] When the blocks are arranged on the support substrate, free space is left between two adjacent blocks. When they are in place on the support substrate, the blocks thus exhibit two free surfaces: an upper surface S1, which is opposite to the support substrate and parallel to the main surface of the support substrate; and a lateral surface S2, which extends on both sides of the block and is perpendicular to the support substrate.

[0049] Because the bulk blocks are spaced apart, epitaxial regeneration (i.e., epitaxy of a material identical to the bulk blocks) causes lateral growth that is substantially parallel to the surface of the supporting substrate, starting from the lateral surface of the bulk blocks. As described below, this lateral growth is more beneficial to crystal quality than vertical growth (i.e., growth perpendicular to the surface of the supporting substrate).

[0050] Therefore, the distance d between two adjacent blocks is advantageously chosen to be as large as possible, while allowing diamond islands growing from the transverse surfaces of the blocks to coalesce and prevent dislocations. Thus, the distance between two adjacent blocks is typically between 300 micrometers and 2 centimeters, and preferably between 500 micrometers and 2.5 millimeters.

[0051] exist Figure 1 In this design, all blocks are represented with the same width and the same block spacing, which allows the blocks to be arranged in a grid pattern, with the blocks aligned in two vertical directions of the supporting substrate to form multiple parallel rows and columns. However, blocks of different shapes or sizes can also be arranged at different distances.

[0052] The support substrate with the blocks arranged on it is then placed into the epitaxial reactor.

[0053] The reactor employs suitable temperature conditions and an atmosphere with appropriate chemical composition for the epitaxial growth of diamond (or group III-V materials, if applicable). Those skilled in the art can determine the appropriate conditions based on the material to be grown.

[0054] Figures 2A to 2C It schematically illustrates that in Figure 1 The various stages of epitaxial growth of diamonds are carried out on the structure.

[0055] In the first stage (Figure 2A Diamond islands 201 and 202 grow on the upper and lateral surfaces of block 20, respectively, with their orientations substantially perpendicular to the surfaces under consideration. In this first stage, these islands are independent of each other.

[0056] In the second phase ( Figure 2B These islands coalesce until they form a continuous layer 2 ( Figure 2C This layer grows until the desired thickness e2 is reached.

[0057] like Figure 2C As shown, the layer of interest is the continuous layer 2 extending over the bulk 20. This is because, even if the material surrounding the bulk is diamond, the layer containing the bulk and the diamond formed by epitaxial lateral extension may exhibit irregular crystal quality, and therefore is not optimal for forming a diamond substrate. Therefore, the thickness e2 is measured between the upper surface of the bulk and the upper surface of layer 2.

[0058] A portion of the continuous layer can then be transferred onto the receiving substrate using a Smart Cut™ type process.

[0059] Reference Figure 3 A weakened region 21 is formed in the continuous layer 2 to define the diamond surface layer 22. As schematically shown by the arrow, the weakened region is formed by ion implantation in the continuous layer 2.

[0060] The injection depth is chosen to be less than or equal to the thickness of the continuous layer, so that the surface layer does not contain bulk material. The thickness of the surface layer 22 is typically between 100 nanometers and 1 micrometer.

[0061] The injection conditions can vary depending on the material of the continuous layers.

[0062] For group III-V materials, the injection of hydrogen and / or helium is typically sufficient to form a weakened region at a given depth in a continuous layer. Those skilled in the art know how to determine the required injection conditions, particularly the injection dose and energy.

[0063] For diamonds, a two-stage hydrogen implantation process may be preferred to promote bubble formation in the implanted region: the first stage of hydrogen implantation is followed by annealing at approximately 1000°C to graphitize the implanted region. Subsequently, a second hydrogen implantation is performed in the graphitized region, which further promotes bubble formation, enabling subsequent separation of the continuous layer. This process is described in Jon de Vecchy's paper entitled "Innovative Substrates from Diamonds" (defended July 2, 2020), which can be consulted for details of the experimental conditions.

[0064] Reference Figure 4 The continuous layer 2 is bonded to the receiving substrate 3.

[0065] Advantageously, the receiving substrate has a diameter suitable for the requirements of power microelectronic devices, typically greater than 100 mm. Preferably, the diameter of the receiving substrate is about 150 mm, 200 mm, or 300 mm. The diameter of the receiving substrate is typically the same as the diameter of the supporting substrate.

[0066] Silicon is a particularly suitable material for forming receiving substrates. This is because it has a coefficient of thermal expansion compatible with diamond or some group III-V materials, and it can be obtained in the form of large-diameter substrates, making it particularly suitable for microelectronic devices. However, those skilled in the art will be able to use any other suitable material for receiving substrates, such as SiC, sapphire, or quartz, in single-crystal or polycrystalline form.

[0067] The bonding of the continuous layer 2 to the receiving substrate 3 is preferably performed by molecular bonding, but an intermediate bonding layer may optionally be used.

[0068] Reference Figure 5 Fracture is induced in the continuous layer, for example by heat treatment, application of mechanical stress or any other means, thereby separating the continuous layer along the weakened region and transferring the surface layer 22 onto the receiving substrate 3.

[0069] This yields a substrate S comprising a diamond layer or a III-V group material layer 22 with excellent crystal quality on a receiving substrate 3. The substrate can be used to manufacture power electronic components or any other application.

[0070] The substrate, consisting of the supporting substrate 1, the bulk 20, and the remainder of the diamond continuous layer or the III-V material continuous layer, can be recycled to form one or more new substrates of the same type as substrate S by transferring a portion of the remainder of the continuous layer onto a new corresponding receiving substrate.

[0071] Therefore, such as Figure 6 As shown, the remaining portion 23 of the diamond continuous layer or the III-V group material continuous layer is polished to eliminate defects associated with injection and fracture.

[0072] If the remaining portion 23 of the diamond continuous layer or the III-V material continuous layer is thick enough, for example, its thickness e3 is greater than the thickness of at least one new diamond layer or III-V material layer to be transferred to the new receiving substrate, then reference can be performed. Figures 3 to 5 The described injection, bonding, and layer transfer processes.

[0073] If the thickness e3 of the remaining portion 23 of the diamond continuous layer or the III-V material continuous layer is insufficient, epitaxial regrowth of the diamond or III-V material can be performed to thicken the diamond layer or the III-V material layer until a layer 24 with the required thickness e4 is obtained, such as... Figure 7As shown. Then one or more portions of layer 24 can be transferred to one or more new corresponding receiving substrates.

[0074] The process of lateral growth of diamond or group III-V materials from the lateral surface of the bulk material can prevent penetrating dislocations, thereby improving the quality of continuous layers, at least in the regions between the bulk materials. Therefore, at least in the portions of the continuous layers located between the bulk materials and obtained primarily through lateral growth of diamond or group III-V materials, a crystal quality of diamond or group III-V materials suitable for manufacturing power electronic components is obtained. This improved crystal quality is achieved without contaminants entering or depositing on the diamond or group III-V material layers.

[0075] However, continuous layers may exhibit non-uniform crystal quality because the portion of the layer located opposite the bulk (primarily obtained through vertical growth of diamond or group III-V materials) exhibits more crystal defects, particularly penetrating dislocations.

[0076] To eliminate the aforementioned defects and homogenize the crystal quality of the diamond continuous layer or the III-V group material continuous layer, the following procedures may be performed. Figures 8A to 8D The described sequence of processing stages.

[0077] The stage sequence is performed after a continuous diamond layer or a continuous III-V material layer is formed on the bulk material and before the layer is bonded to the receiving substrate.

[0078] like Figure 8A As shown, the surface of continuous layer 2 is lightly etched. Those skilled in the art can select the etching method according to the material of continuous layer 2. For example, the etching can be a reactive ion etching of the "inductively coupled plasma reactive ion etching" (ICP-RIE) type.

[0079] The etching process exposes regions Z1 with a high defect density, which are typically opposite the bulk material. This creates cavities in the continuous layer 2. Depending on the thickness of the continuous layer 2, the depth of the cavity 2a is approximately 0.1 to 2 micrometers.

[0080] like Figure 8B As shown, a photoresist mask 4 is subsequently deposited on the surface of the continuous layer 2. This mask has openings that expose the etched area Z1 and protect the unetched area. The mask pattern can be predefined according to the distribution pattern of the bulk material on the supporting substrate; that is, the openings are arranged opposite the bulk material. The mask can be formed using known photolithography techniques.

[0081] Reference Figure 8CA second etching is performed through mask 4. This second etching can excavate a sufficiently deep region Z2 to promote the lateral growth of diamond or III-V group materials in the subsequent epitaxial regrowth stage. Therefore, the depth of region Z2 can be between 1 and 10 micrometers depending on the thickness of the continuous layer 2. The etching does not penetrate the bulk 20 itself. Those skilled in the art can select the etching method based on the material of the continuous layer. The second etching can be performed using the same method as the first etching, or a different method.

[0082] The mask is then removed, for example, through selective etching.

[0083] Reference Figure 8D Epitaxial regrowth of diamond or III-V group materials is carried out to promote lateral growth starting from both sides of the etched region Z2, accompanied by vertical growth starting from the unetched region, until aggregation occurs and a continuous layer 2 with improved crystal quality is obtained.

[0084] The phase sequence can be performed once or multiple times.

[0085] Preferably, this stage sequence is performed multiple times as required to achieve a value less than or equal to 10 in consecutive layers 2. 4 cm - ² dislocation density.

[0086] One advantage of this process is the ability to achieve very good crystal quality, potentially superior to that of bulk materials. Therefore, in some embodiments, the diamond bulk or donor substrate can be obtained using an "HPHT" (high pressure, high temperature) process, providing optimal but relatively expensive crystal quality. In other embodiments, the diamond or III-V group material bulk or donor substrate can be obtained using a chemical vapor deposition process, which provides lower but cheaper crystal quality. However, this lower bulk crystal quality can be overcome by epitaxial regrowth starting from the lateral surface of the bulk material.

Claims

1. A method for manufacturing a diamond substrate or a III-V group material substrate for microelectronic applications, the method comprising: - Multiple bulk materials (20) of single-crystal diamond or single-crystal III-V material are bonded to a support substrate (1), with each bulk material spaced apart from its adjacent bulk materials, thereby exposing the lateral surface (S2) of each bulk material. - Starting from the lateral and upper surfaces of each block, epitaxial growth of diamond or group III-V material continues until a continuous single-crystal diamond layer or a continuous single-crystal group III-V material layer (2) is formed extending over the plurality of blocks (20). - The sequence includes the following stages in turn: - Polish the continuous layer (2), - The polished surface of the continuous layer (2) is first etched to expose regions (Z1) with a high crystal defect density, which are located opposite the bulk. - A photoresist mask (4) is deposited on the surface of the continuous layer (2) to mask the unetched areas. - Perform a second etching that is deeper than the first etching on the area exposed by the mask (Z2). - Lateral epitaxial regrowth begins from the wall of the etched region (Z2). - By implanting atomic entities, a weakening region (21) is formed in the single-crystal diamond continuous layer or the single-crystal III-V group material continuous layer (2) to define the surface layer (22) to be transferred. - The single-crystal diamond continuous layer or single-crystal III-V group material continuous layer (2) is bonded to the receiving substrate (3). - Separate the single-crystal diamond continuous layer or the single-crystal III-V material continuous layer (2) along the weakened region (21) to transfer the single-crystal diamond surface layer or the single-crystal III-V material surface layer (22) onto the receiving substrate (3) to form the diamond substrate or the III-V material substrate.

2. The method according to claim 1, wherein, The sequence is repeated at least once.

3. The method according to any one of claims 1 and 2, wherein, The sequence is advantageously performed multiple times as needed to obtain a thickness less than or equal to 1E4 cm in the single-crystal diamond continuous layer or the single-crystal III-V group material continuous layer (2). - ² dislocation density.

4. The method according to any one of claims 1 to 3, wherein, The single-crystal diamond continuous layer or the single-crystal III-V group material continuous layer has a thickness greater than or equal to 1 micrometer (e2).

5. The method according to any one of claims 1 to 4, wherein, The single-crystal diamond surface layer or single-crystal III-V material surface layer transferred onto the receiving substrate has a thickness between 100 nanometers and 1 micrometer.

6. The method according to any one of claims 1 to 5, wherein, The distance between two adjacent blocks is between 300 micrometers and 2 centimeters, preferably between 500 micrometers and 2.5 millimeters.

7. The method according to any one of claims 1 to 6, wherein, Each block has a width between 3 millimeters and 2 centimeters.

8. The method according to any one of claims 1 to 7, wherein, At least one of the receiving substrate and the supporting substrate has a diameter greater than 100 mm.

9. The method according to any one of claims 1 to 8, wherein, The receiving substrate comprises silicon, silicon carbide, sapphire, or quartz.

10. The method according to any one of claims 1 to 9, wherein, Multiple bulk crystals of the single-crystal diamond or single-crystal III-V group material are formed by chemical vapor deposition.

11. The method according to any one of claims 1 to 10, the method comprising: After the single-crystal diamond surface layer or single-crystal III-V material surface layer (22) is transferred onto the receiving substrate (3): - Polish the remaining portion (23) of the single-crystal diamond continuous layer or single-crystal III-V material continuous layer extending on the plurality of blocks (20). - By implanting atomic entities, weakened regions are formed in the single-crystal diamond continuous layer or the single-crystal III-V group material continuous layer to define the new surface layer to be transferred. - Bond the single-crystal diamond continuous layer or the single-crystal III-V group material continuous layer to a new receiving substrate. - Separate the single-crystal diamond continuous layer or the single-crystal III-V material continuous layer along the weakened region, thereby transferring the new surface layer of single-crystal diamond or single-crystal III-V material onto the new receiving substrate to form a new diamond substrate or a new III-V material substrate.

12. The method of claim 11, wherein the method comprises: Between polishing the remaining portion (23) of the single-crystal diamond continuous layer or the single-crystal III-V material continuous layer and forming the weakened region (21), epitaxial regrowth of diamond or epitaxial growth of III-V material is performed to thicken the single-crystal diamond continuous layer or the single-crystal III-V material continuous layer (24).

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