Preparation method of silver-palladium alloy target ceramic element electrode

Abstract

The invention relates to a preparation method of a silver-palladium alloy target material ceramic element electrode, which comprises the following steps: step S1, preparation of a bonding layer: firstly, preparing a ceramic substrate, adopting a nickel-chromium alloy target material for sputtering, forming a nickel-chromium bonding layer on the ceramic substrate, and controlling the sputtering power range to be 500-700W; s2, a conductive layer is manufactured, sputtering is conducted on the nickel-chromium bonding layer through a silver-palladium alloy target material, the conductive layer is formed, the sputtering power range is controlled to be 300-500 W, and an electrode is obtained; and S3, heat treatment is conducted, specifically, in the sputtering process of the step S1 or in the sputtering process of the step S2 or after the whole sputtering process is finished, heating treatment is conducted on the ceramic base body, and the heat treatment temperature range is 50-80 DEG C. The method has the advantages that through the synergistic effect of the nickel-chromium bonding layer, the silver-palladium conducting layer with specific components and the optimized heat treatment technology, the heat conductivity of the ceramic base body is improved, and the heat conductivity of the ceramic base body is improved. The preparation of the ceramic element electrode with low cost, high weldability and strong binding force is realized.

Description

Technical Field

[0001] This invention relates to the field of electronic component manufacturing, and in particular to a method for preparing a silver-palladium alloy target ceramic component electrode. Background Technology

[0002] Currently, high-end ceramic element electrodes often use gold or palladium-silver alloys with high palladium content. However, these precious metals are expensive, which severely restricts the cost control of the components. As a result, the industry has begun to use pure silver as the electrode for high-end ceramic elements.

[0003] However, using pure silver presents several problems. First, under the combined influence of a DC electric field, humidity, and temperature, silver ions are prone to migration and dendrite formation, leading to a decrease in insulation resistance and even short circuits. Second, silver is easily oxidized at high temperatures, causing a deterioration in electrode conductivity and solderability. Third, the mismatch between the thermal expansion coefficients and bonding properties of silver and the ceramic substrate results in weak adhesion, leading to electrode detachment or failure during processing. Ultimately, this results in insufficient reliability of pure silver ceramic element electrodes.

[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention discloses a method for preparing a silver-palladium alloy target ceramic element electrode.

[0006] A method for preparing a silver-palladium alloy target ceramic element electrode includes the following steps: Step S1, bonding layer formation: First, prepare a ceramic substrate and use a nickel-chromium alloy target for sputtering to form a nickel-chromium bonding layer on the ceramic substrate. The sputtering power range is controlled between 500 and 700W. Step S2: The conductive layer is formed by sputtering a silver-palladium alloy target on the nickel-chromium bonding layer. The sputtering power is controlled within the range of 300~500W to obtain the electrode. Step S3, heat treatment: During the sputtering process in step S1 or step S2, or after the entire sputtering process is completed, the ceramic substrate is subjected to heat treatment at a temperature range of 50~80℃.

[0007] Furthermore, in step S1, the sputtering time ranges from 100 to 400 seconds.

[0008] Furthermore, in step S2, the sputtering time ranges from 150 to 300 seconds.

[0009] Furthermore, in step S2, the ratio of silver to palladium in the silver-palladium alloy target ranges from 70 to 90: 10 to 30.

[0010] Furthermore, in step S2, the ratio of silver to palladium in the silver-palladium alloy target is 80:20.

[0011] Furthermore, in step S3, the heat treatment time ranges from 800 to 1200 seconds.

[0012] Furthermore, in step S1, the ceramic substrate is an LC material piezoelectric ceramic substrate.

[0013] Furthermore, in step S1, during the preparation of the ceramic substrate, the ceramic substrate is ultrasonically cleaned and dried.

[0014] The advantages of this invention are: 1. The structural design combining the NiCr bonding layer and the AgPd conductive layer ensures extremely strong bonding between the electrode and the ceramic substrate. Through the synergistic effect of the NiCr bonding layer, the silver-palladium conductive layer with a specific composition, and the optimized heat treatment process, the comprehensive mechanical properties of the electrode are guaranteed, the reliability of the electrode is improved, and expensive gold or high-palladium alloys are replaced, significantly reducing the cost of electrode materials. Ultimately, this achieves the fabrication of low-cost, highly solderable, and strongly bonded ceramic element electrodes.

[0015] 2. The electrodes have stable solderability and can withstand lead-free soldering at 360℃ for more than 270 seconds or high-temperature soldering at 420℃ for 90 seconds, meeting the stringent soldering process requirements.

[0016] 3. The sheet resistance of the electrode is not higher than 500mΩ / □, and its performance is equivalent to that of a gold electrode of the same thickness. Furthermore, the palladium element in the silver-palladium alloy can effectively suppress the migration and oxidation tendency of pure silver, reduce the occurrence of electrode oxidation failure, and improve the long-term reliability of the electrode element.

[0017] 4. The process parameter windows for sputtering and heat treatment are clearly defined, and it is highly compatible with existing sputtering equipment. It will not cause excessively high heat treatment temperatures, thus avoiding overheating of the ceramic matrix and facilitating large-scale and stable production. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the layered structure of the electrode of a silver-palladium alloy target ceramic element.

[0019] Figure 2 This is a schematic diagram of the microstructure of the electrode prepared in Example 1.

[0020] Figure 3 The image shows the surface condition of the electrode prepared in Example 1 after a cross-cut adhesion test.

[0021] Figure 4 This is a schematic diagram of the solder joint shape of the electrode prepared in Example 1. Detailed Implementation

[0022] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention, in conjunction with the accompanying drawings and preferred embodiments, is provided below.

[0023] Example 1: A method for preparing a silver-palladium alloy target ceramic element electrode includes the following steps: Step S1, bonding layer fabrication: First, prepare a ceramic substrate, which is an LC piezoelectric ceramic substrate with dimensions of 78mm × 7.5mm × 0.2mm. The ceramic substrate is ultrasonically cleaned and dried. Then, place the dried ceramic substrate into a magnetron sputtering apparatus. After vacuuming, sputtering is performed using a nickel-chromium alloy target to form a nickel-chromium bonding layer on the ceramic substrate. The sputtering power is controlled within the range of 600W, the sputtering time is 300s, and the ceramic substrate is heated to 60℃.

[0024] Step S2: The conductive layer is formed by sputtering a silver-palladium alloy target on the nickel-chromium bonding layer. The ratio of silver to palladium in the silver-palladium alloy target is 80:20. The sputtering power is controlled within the range of 400W and the sputtering time is 250s to obtain the electrode.

[0025] Step S3, heat treatment, the entire sputtering and subsequent heat preservation stage, the total heat treatment time is controlled within 1000s.

[0026] The final product is a silver-palladium alloy target ceramic element electrode, the structure of which is as follows: Figure 1 As shown, it includes a ceramic layer consisting of a ceramic substrate, a NiCr bonding layer, and an AgPd conductive layer, which are disposed layer by layer.

[0027] Product performance testing: The test results of the product made in Example 1 are as follows: Electrode surface: such as Figure 2 As shown, the magnification is 500 times, and the surface is free of defects.

[0028] Shear resistance: 500 mΩ / □.

[0029] Bonding force: such as Figure 3 As shown, no material came off during the cross-cut adhesion test; the pull-out force test showed ≥2N / mm. 2 .

[0030] Solderability: such as Figure 4 As shown, solder joints were set on the AgPd conductive layer of the electrode, and leads were connected to the solder joints for lead-free soldering. A 360°C lead-free soldering test was conducted for 320 seconds without any defects.

[0031] Example 2: The difference from Example 1 is that: A method for preparing a silver-palladium alloy target ceramic element electrode includes the following steps: Step S1, bonding layer fabrication: First, prepare a ceramic substrate, which is an LC piezoelectric ceramic substrate with dimensions of 78mm × 7.5mm × 0.2mm. The ceramic substrate is ultrasonically cleaned and dried. Then, place the dried ceramic substrate into a magnetron sputtering apparatus. After vacuuming, sputtering is performed using a nickel-chromium alloy target to form a nickel-chromium bonding layer on the ceramic substrate. The sputtering power is controlled within the range of 500W, the sputtering time is 300s, and the ceramic substrate is heated to 50℃.

[0032] Step S2: The conductive layer is formed by sputtering a silver-palladium alloy target on the nickel-chromium bonding layer. The ratio of silver to palladium in the silver-palladium alloy target is 80:20. The sputtering power is controlled within the range of 300W and the sputtering time is 150s to obtain the electrode.

[0033] Product testing showed that the performance of the sample in Example 2 was similar to that of the sample in Example 1.

[0034] Example 3: The difference from Example 1 is that: A method for preparing a silver-palladium alloy target ceramic element electrode includes the following steps: Step S1, bonding layer fabrication: First, prepare a ceramic substrate, which is an LC piezoelectric ceramic substrate with dimensions of 78mm × 7.5mm × 0.2mm. The ceramic substrate is ultrasonically cleaned and dried. Then, place the dried ceramic substrate into a magnetron sputtering apparatus. After vacuuming, sputtering is performed using a nickel-chromium alloy target to form a nickel-chromium bonding layer on the ceramic substrate. The sputtering power is controlled within the range of 700W, the sputtering time is 400s, and the ceramic substrate is heated to 70℃.

[0035] Step S2: The conductive layer is formed by sputtering a silver-palladium alloy target on the nickel-chromium bonding layer. The ratio of silver to palladium in the silver-palladium alloy target is 80:20. The sputtering power is controlled within the range of 500W and the sputtering time is 300s to obtain the electrode.

[0036] Product testing showed that the performance of the sample in Example 3 was similar to that of the sample in Example 1.

[0037] Example 4: The difference from Example 1 is that: Step S2: The conductive layer is formed by sputtering a silver-palladium alloy target on the nickel-chromium bonding layer. The ratio of silver to palladium in the silver-palladium alloy target is 70:10. The sputtering power is controlled within the range of 400W and the sputtering time is 250s to obtain the electrode.

[0038] Product testing showed that the performance of sample 4 was similar to that of sample 1.

[0039] Example 5: The difference from Example 1 is that: Step S2: The conductive layer is formed by sputtering a silver-palladium alloy target on the nickel-chromium bonding layer. The ratio of silver to palladium in the silver-palladium alloy target is 90:30. The sputtering power is controlled within the range of 400W and the sputtering time is 250s to obtain the electrode.

[0040] Product testing showed that the performance of sample 5 was similar to that of sample 1.

[0041] Example 6: The difference from Example 1 is that: Step S3, heat treatment, the entire sputtering and subsequent heat preservation stage, the total heat treatment time is controlled within 800s.

[0042] Product testing showed that the performance of sample 6 was similar to that of sample 1.

[0043] Example 7: The difference from Example 1 is that: Step S3, heat treatment, the entire sputtering and subsequent heat preservation stage, the total heat treatment time is controlled within 1200s.

[0044] Product testing showed that the performance of sample 7 was similar to that of sample 1.

[0045] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A method for preparing a silver-palladium alloy target ceramic element electrode, characterized in that, Includes the following steps: Step S1, bonding layer formation: First, prepare a ceramic substrate and use a nickel-chromium alloy target for sputtering to form a nickel-chromium bonding layer on the ceramic substrate. The sputtering power range is controlled between 500 and 700W. Step S2: The conductive layer is formed by sputtering a silver-palladium alloy target on the nickel-chromium bonding layer. The sputtering power is controlled within the range of 300~500W to obtain the electrode. Step S3, heat treatment: During the sputtering process in step S1 and / or step S2, or after the entire sputtering process is completed, the ceramic substrate is subjected to heat treatment at a temperature range of 50~80℃.

2. The method for preparing a silver-palladium alloy target ceramic element electrode according to claim 1, characterized in that: In step S1, the sputtering time ranges from 100 to 400 seconds.

3. The method for preparing a silver-palladium alloy target ceramic element electrode according to claim 1, characterized in that: In step S2, the sputtering time ranges from 150 to 300 seconds.

4. The method for preparing a silver-palladium alloy target ceramic element electrode according to claim 3, characterized in that: In step S2, the ratio of silver to palladium in the silver-palladium alloy target ranges from 70 to 90: 10 to 30.

5. The method for preparing a silver-palladium alloy target ceramic element electrode according to claim 4, characterized in that: In step S2, the ratio of silver to palladium in the silver-palladium alloy target is 80:

20.

6. The method for preparing a silver-palladium alloy target ceramic element electrode according to claim 1, characterized in that: In step S3, the heat treatment time ranges from 800 to 1200 seconds.

7. The method for preparing a silver-palladium alloy target ceramic element electrode according to claim 1, characterized in that: In step S1, the ceramic substrate is an LC material piezoelectric ceramic substrate.

8. The method for preparing a silver-palladium alloy target ceramic element electrode according to claim 7, characterized in that: In step S1, during the preparation of the ceramic substrate, the ceramic substrate is ultrasonically cleaned and dried.

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