Gas distribution block structure, gas inlet assembly and semiconductor process equipment

Abstract

The invention discloses an air distribution block structure, an air inlet assembly and semiconductor process equipment. The air distribution block structure comprises a first flow channel; the side air inlet is formed in the side wall of the first flow channel, and the air inlet angle of the side air inlet is tangent to the outer side wall of the first flow channel; the second flow channel is communicated with the inner side wall of the first flow channel through a central flow guide column and is positioned on the lower layer of the first flow channel; and the plurality of side gas outlets are formed in the side wall of the second flow channel, so that the gas is transversely output. According to the gas distribution device, the velocity vector change during gas inlet can be reduced, so that the generation of vortexes is reduced, and meanwhile, the flow velocity offset phenomenon in the gas distribution process can be avoided, so that the gas distribution uniformity of each gas outlet is improved, and the uniformity difference of a multi-cavity process result is favorably reduced.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor manufacturing, specifically to a gas distribution block structure, an air intake component, and a semiconductor process equipment. Background Technology

[0002] In semiconductor process equipment, it is typically required that the gases supplied to different chambers meet certain uniformity requirements to ensure the uniformity of the process results across different chambers. For example, in atomic layer deposition (ALD) equipment for thin film deposition, the deposition process gases supplied to multiple chambers must be evenly distributed to ensure that the thin film deposition results obtained in each chamber are uniform.

[0003] Currently, in existing technologies, the unreasonable air intake method of the gas distribution structure often generates numerous eddies. Furthermore, during the gas distribution process within the structure, especially at the bottom, gas velocity deviation occurs, making it difficult to achieve uniformity of gas reaching each outlet to meet higher process requirements. Moreover, the gas distribution non-uniformity at the outlet of current gas distribution structures increases significantly with increasing intake air volume.

[0004] In order to solve the above-mentioned problems in the prior art, there is an urgent need in the art for a gas separation technology that can reduce the velocity vector change during gas intake, thereby reducing the generation of eddies, and at the same time avoid the occurrence of flow velocity bias during gas separation, thereby improving the gas separation uniformity of each outlet and helping to reduce the uniformity difference of process results in multi-chamber systems. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a gas distribution block structure, an air intake component, and a semiconductor process apparatus, which can reduce the velocity vector change during gas intake, thereby reducing the generation of eddies, and at the same time avoid the occurrence of flow velocity bias during gas distribution, thereby improving the gas distribution uniformity of each outlet and helping to reduce the uniformity difference of multi-chamber process results.

[0007] Specifically, the gas distribution block structure provided by the first aspect of the present invention includes: a first flow channel; a side air inlet disposed on the side wall of the first flow channel, and the air inlet angle of the side inlet being tangent to the outer side wall of the first flow channel; a second flow channel located below the first flow channel and communicating with the inner side wall of the first flow channel via a central guide column; and a plurality of side air outlets disposed on the side wall of the second flow channel to allow gas to be output laterally.

[0008] Furthermore, in some embodiments of the present invention, the air intake angle of the side air intake and the tangent angle of the outer side wall of the first flow channel are between 0° and 15°.

[0009] Furthermore, in some embodiments of the present invention, the first flow channel is a gas equalization chamber with an annular flow channel structure, so that the gas circulates along the outer annular wall of the gas equalization chamber.

[0010] Furthermore, in some embodiments of the present invention, the second flow channel includes a buffer channel, the buffer channel including a plurality of bent structures.

[0011] Furthermore, in some embodiments of the present invention, the buffer channel includes the bending structure in a plurality of longitudinal spaces.

[0012] Furthermore, in some embodiments of the present invention, the end diameter of the second flow channel increases as it approaches the side outlet.

[0013] Furthermore, in some embodiments of the present invention, the central guide column is a hollow cylindrical structure, the outer wall of which is used to guide the gas in the first flow channel to the second flow channel, and the hollow part therein is a space for the passage of pipelines or other components.

[0014] Furthermore, the air intake assembly provided according to the second aspect of the present invention includes: a plurality of spray plates for introducing process gas into each reaction space; and the gas distribution block structure provided according to the first aspect of the present invention, wherein a plurality of side outlets are correspondingly connected to the upstream of the plurality of spray plates for uniformly distributing the process gas to each of the spray plates.

[0015] Furthermore, in some embodiments of the present invention, the air intake assembly further includes a valve disposed between each of the spray plates and the side outlet of the corresponding air distribution block structure, so as to control the timing of the process gas entering the corresponding reaction space.

[0016] Furthermore, the semiconductor process apparatus provided according to the third aspect of the present invention includes: a gas source for providing process gas; a plurality of process chambers for performing process processing; and the gas inlet assembly provided according to the second aspect of the present invention, disposed above the process chambers, for introducing uniformly distributed process gas into the reaction space within each of the process chambers to perform the process processing. Attached Figure Description

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A top view of an intake assembly provided according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic diagram of a gas distribution block structure provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A side cross-sectional view of a gas distribution block structure provided according to some embodiments of the present invention is shown.

[0021] Figure 4 This is a schematic diagram of the air inlet structure of the prior art's air distribution block structure.

[0022] Figure 5 A top view of the first flow channel provided according to some embodiments of the present invention is shown.

[0023] Figure 6A A simulation diagram of the gas velocity vector within the gas distribution block structure in the prior art is shown.

[0024] Figure 6B A simulation diagram of the gas velocity vector on the upper surface of the gas distribution block structure provided by the present invention is shown.

[0025] Figure 6C A simulation diagram of the gas velocity vector on the lower surface within the gas distribution block structure provided by the present invention is shown.

[0026] Figure 7A The diagram shows the gas velocity contours at each outlet within the gas distribution block structure in the prior art.

[0027] Figure 7B The diagram shows the gas velocity cloud map at each gas outlet within the gas distribution block structure provided by the present invention.

[0028] Figure label:

[0029] 100 intake assembly;

[0030] 110 spray plate;

[0031] 120 valve;

[0032] 200 and 300 cubic meter air-block structures;

[0033] 210 First flow channel;

[0034] 211 side air intake;

[0035] 220 Second Flow Channel;

[0036] 221 side air outlet;

[0037] 230 central guide column;

[0038] 231 Hollow section;

[0039] 240 buffer channels;

[0040] 310 intake bend;

[0041] The first half of 311;

[0042] The latter half of 312. Detailed Implementation

[0043] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0044] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0045] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0046] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0047] As mentioned above, in prior art, the unreasonable air intake method of the gas distribution structure often generates many eddies. Furthermore, during the gas distribution process within the gas distribution structure, especially at the bottom, gas velocity deviation occurs, making it difficult to meet higher process requirements for the uniformity of gas reaching each gas outlet. Moreover, the gas distribution non-uniformity at the outlet of the current gas distribution structure increases significantly with increasing intake air volume.

[0048] To address the aforementioned problems in the prior art, this invention provides a gas distribution block structure, an air intake component, and a semiconductor process apparatus, which can reduce the velocity vector change during gas intake, thereby reducing the generation of eddies. It can also avoid the occurrence of flow velocity bias during gas distribution, thereby improving the gas distribution uniformity of each outlet and helping to reduce the uniformity differences in the process results of multi-chamber systems.

[0049] In some non-limiting embodiments, the gas distribution block structure provided in the first aspect of the present invention can be configured in the air intake assembly provided in the second aspect of the present invention. Furthermore, the air intake assembly provided in the second aspect can be configured in the semiconductor process equipment provided in the third aspect of the present invention.

[0050] The working principle of the above-described air distribution block structure will be described below with reference to some embodiments of air intake components and semiconductor process equipment. Those skilled in the art will understand that these embodiments of air intake components and semiconductor process equipment are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide some specific solutions convenient for public implementation, rather than limiting all operating methods or functions of the air distribution block structure. Similarly, the air distribution block structure is also only one non-limiting implementation provided by the present invention and does not constitute a limitation on all operating methods or functions of these air intake components and semiconductor process equipment.

[0051] Specifically, in some embodiments, the semiconductor process equipment mainly includes a gas source, multiple process chambers, and an inlet assembly. The gas source provides the process gas. The gas source can be a gas box with various processing functions such as flow regulation and flow direction switching; its technical details do not involve technical improvements of this invention and will not be elaborated here. Multiple process chambers can perform various process treatments. Each process chamber can adapt to the timing requirements of various thin film preparation processes, etching processes, including but not limited to plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and metal-organic chemical vapor deposition (MOCVD), and is configured with corresponding structures and accessories, which are not limited here. The inlet assembly can be disposed above the process chambers via a chamber cover plate and is used to introduce uniformly distributed process gas into the reaction space within each process chamber for process treatment.

[0052] Furthermore, you can refer to Figure 1 . Figure 1 A top view of an intake assembly provided according to some embodiments of the present invention is shown.

[0053] like Figure 1 As shown, in some embodiments of the present invention, the air intake assembly 100 may include a plurality of spray plates 110 and a gas distribution block structure 200. The plurality of spray plates 110 are used to introduce process gas into the reaction space within each process chamber. The plurality of side outlets in the gas distribution block structure 200 are correspondingly connected to the upstream of the plurality of spray plates 110, and are used to uniformly distribute the process gas to each spray plate 110.

[0054] In addition, continue as Figure 1 As shown, in some embodiments, in order to improve the precision control of the process results in each chamber, a valve 120 can be provided between each spray plate 110 and the side outlet of its corresponding gas distribution block structure 200 to control the timing of the process gas entering the corresponding reaction space.

[0055] To better explain the above-mentioned gas distribution block structure 200, please refer to... Figure 2 and Figure 3 Let's take a look together. Figure 2 A schematic diagram of a gas distribution block structure provided according to some embodiments of the present invention is shown. Figure 3 A side cross-sectional view of a gas distribution block structure provided according to some embodiments of the present invention is shown.

[0056] like Figure 2 and Figure 3 As shown, in some embodiments, the air distribution block structure 200 may mainly include a first flow channel 210, a side air inlet 211, a second flow channel 220, and a plurality of side air outlets 221.

[0057] Specifically, such as Figure 3 As shown, the side inlet 211 can be located on the side wall of the first flow channel 210, and its inlet angle is tangent to the outer side wall of the first flow channel 210. The second flow channel 220 is located below the first flow channel 210 and is connected to the inner side wall of the first flow channel 210 via the central guide column 230. The first flow channel 210 and the second flow channel 220 are a double-layer interconnected flow channel structure. Multiple side outlets 221 are provided on the side wall of the second flow channel 220. Gas can be output laterally through the side outlets 221. By using the side inlets 211 provided on the side of the first flow channel 210, the process gas can be introduced from the side, which can improve the eddies and gas velocity deviation phenomena existing in the prior art.

[0058] Combination Figure 4 A shared understanding. Figure 4 This is a schematic diagram of the air inlet structure of the prior art's air distribution block structure.

[0059] like Figure 4 As shown, in the prior art, a horizontal plane is assumed to be the reference plane. The intake bend 310 is positioned above and perpendicularly connected to the gas distribution block structure 300. When the gas inside the intake bend 310 advances along its first half 311, it possesses momentum parallel to the reference plane. This results in the gas velocity on the outer side of the bend being greater than that on the inner side as it enters the second half 312 of the intake bend 310, perpendicular to the reference plane, into the gas distribution block structure 300. This phenomenon of higher velocity on the outer side and lower velocity on the inner side is known as gas velocity bias.

[0060] In response, in the above Figure 2 and Figure 3 In the provided embodiment, gas can enter the gas distribution block structure 200 at a greater angle relative to the wall surface by means of side air intake. Figure 4In the prior art shown, the gas enters the gas distribution block structure 300 vertically. In this embodiment, however, the gas enters the gas distribution block structure 200 almost laterally. Therefore, the change in the gas velocity vector is smaller, improving the uniformity of gas flow within the first flow channel 210, thereby helping to improve the spatial uniformity of the gas velocity vector distribution within the gas distribution block structure 200 and reducing eddy current generation. Furthermore, since the inlet bend 310 structure is eliminated in this embodiment, velocity bias during gas distribution can be avoided, thereby improving the uniformity of gas distribution at each outlet. Even with an increased inlet flow rate, the difference in gas velocity at each outlet is significantly reduced.

[0061] Furthermore, through the double-layer flow channel design of the upper and lower double-layer first flow channel 210 and the second flow channel 220, as well as the double-sided inlet and outlet design, this embodiment fully utilizes the longitudinal space within the gas distribution block structure 200 to form multiple bends, thereby extending the gas flow path from the side inlet 211 to each side outlet 221, thus providing more space for the process gas to mix evenly. In addition, the vertical spacing between the first flow channel 210 and the second flow channel 220 avoids the problem of uneven gas flow at each side outlet 221 caused by the lateral impulse of the process gas intake, thereby further improving the uniformity of gas distribution output from each side outlet 221 in the lower layer.

[0062] Next, please combine Figure 5 A shared understanding. Figure 5 A top view of the first flow channel provided according to some embodiments of the present invention is shown.

[0063] like Figure 5 As shown, in some optional embodiments, the intake angle of the side inlet 211 and the tangential angle of the outer wall of the first flow channel 210 can be between 0° and 15°. By designing the intake angle to be tangential to the outer wall of the first flow channel 210, tangential velocity can be injected into the airflow when the gas is laterally intake, causing the gas to flow along the outer wall first. The presence of the gas's own momentum will cause the gas to first fill the outer ring of the first flow channel 210, and then gradually diffuse inward toward the position near the central guide column 230, instead of flowing directly into the lower space after entering from the side inlet 211. During the process of gas flow and diffusion in the first flow channel 210, intake disturbance can be eliminated, the airflow can be changed from a directional jet to a full-space diffusion flow, a stable pressure field can be formed, and local flow deviation can be avoided, which would cause an imbalance in the gas flow distribution at the outlet due to path differences.

[0064] In some preferred embodiments, such as Figure 3 and Figure 5As shown, the first flow channel 210 can be a uniform gas chamber with an annular flow channel structure. During lateral tangential air intake, the gas circulates along the outer annular wall of the uniform gas chamber, first filling the outer circumference and then the inner circumference. Only after the gas fills the entire uniform gas chamber will it flow downward into the second flow channel 220. By setting the first flow channel 210 as an annular flow channel structure, compared to rectangular or other polygonal flow channel structures, the sharp corner areas between adjacent sides are eliminated. At the sharp corner areas, the tangential direction changes abruptly. When the tangential airflow encounters the sharp corner area, it cannot maintain continuous tangential motion and is forced to change direction, easily causing airflow separation and vortices, and disrupting the gas's wall-mounted diffusion effect. In the annular flow channel structure, the outer annular wall has a smooth and continuous circular curved surface with an uninterrupted tangential direction. Therefore, during tangential air intake, the tangent at any position can be precisely matched to ensure stable airflow diffusion in a single direction.

[0065] Furthermore, in some preferred embodiments, when the air intake angle of the side air intake 211 is 0° to the tangent angle of the outer wall of the first flow channel 210, the air intake direction can be completely along the circumferential tangent direction of the annular flow channel structure, with an angle of 0° with the annular tangent (i.e., no radial component). At this time, the gas inlet velocity direction is consistent with the tangent direction of the outer annular wall of the annular flow channel structure. In this embodiment, since the airflow only obtains tangential velocity, after entering the channel, it is affected by centrifugal force (F=mv). 2 The pressure difference generated by the flow ( / r) forces the gas to continuously adhere to the outer ring wall, forming a stable, wall-attached circulation with optimal adhesion. Therefore, this embodiment not only improves the uniformity of gas distribution within the first flow channel 210 but also avoids turbulence and eddies during the intake process.

[0066] In the above embodiment, through the side tangential air intake method, the gas enters the gas distribution block structure 200 from the side along the circumferential direction. The change in the gas velocity vector is small, and after it diffuses and fills the upper first flow channel 210, it enters the lower second flow channel 220. This helps to improve the uniformity of the spatial distribution of the gas velocity vector within the gas distribution block structure 200 and reduce the generation of eddies. Furthermore, the double-layer mixing structure can extend the flow path of the gas during the gas distribution process, providing more sufficient spatial mixing, thereby ensuring uniform gas output from the multiple side outlets 221 and reducing the difference in gas output uniformity between the side outlets 221. Compared to... Figure 4 The single-layer gas distribution block structure 300 with a right-angle bottom entry method for gas in this embodiment can greatly improve the uniformity of gas distribution, thereby significantly improving the uniformity of process effects in each chamber during the process.

[0067] Please continue as follows Figure 3As shown, in some embodiments, after the gas in the first flow channel 210 fills the entire gas equalization chamber from the outside to the inside, it can advance along the central guide column 230 and flow down to the second flow channel 220. The second flow channel 220 may include a buffer channel 240. The buffer channel 240 may include multiple bends. By increasing the number of bends in the buffer channel 240, the impulse of the gas in a single direction can be further reduced, thereby promoting sufficient mixing between process gases (such as reactant gases, purge gases, etc.) and / or multiple process gases.

[0068] In some alternative embodiments, the bending structure in the buffer channel 240 can be disposed in any region of the space. Preferably, in Figure 3 In the illustrated embodiment, the buffer channel 240 may include several bends within the longitudinal space. This embodiment makes full use of the longitudinal space within the gas distribution block structure 200 to form multiple bends. The buffer channel 240 formed by these bends can avoid the problem of uneven gas flow at the outlets 221 on each side caused by the inlet surge of the process gas.

[0069] Furthermore, continue as Figure 3 As shown, in some preferred embodiments, the end diameter of the second flow channel 220 can increase as it approaches the side outlet 221. Specifically, in Figure 3 In the illustrated embodiment, the end of the second flow channel 220 is the buffer channel 240. The diffusion effect generated by gradually widening the diameter of the buffer channel 240 reduces the gas velocity as it flows through it, thereby reducing the gas velocity at the bottom (i.e., the side outlet 221). Reducing the gas velocity at the bottom reduces the generation of eddies. Furthermore, the gradually widening diameter of the buffer channel 240 ensures a smooth and gradual reduction in gas velocity at the bottom, rather than a sudden deceleration, thus avoiding flow field turbulence caused by sudden drops in local velocity. In other words, since the gas velocity vector does not change drastically during the bottoming process, the gas uniformity is ensured during the forward movement of the gas at the end of the second flow channel 220 and during the bottoming phase.

[0070] Compared to the right-angle bottom-rush method in prior art, by setting an S-shaped buffer channel structure with a gradually increasing diameter, not only can the airflow be smoothly decelerated, thereby reducing the bottom-rush velocity, but it can also reduce high-speed impact and sudden velocity changes, thus suppressing vortex generation. Furthermore, the gradually increasing diameter S-shaped buffer channel structure can also smoothly transition the velocity vector, avoiding drastic vector changes during bottom-rush and ensuring gas uniformity between the bottom-rush and forward phases. Through the above embodiments, the present invention can reduce the vortices generated during gas flow within the gas distribution block structure 200, ensuring the uniformity of gas at the outlets 221 on different sides of the gas distribution block structure 200, thereby providing the target flow rate of process gas to each process chamber uniformly and stably. For example, in the gas distribution block structure of the right-angle bottom-rush method in prior art, the gas velocity range before reaching each outlet is 20~100 m / s. However, within the buffer channel 240 in the above embodiments, the gas velocity range is stable at 34~68 m / s. The smaller range of flow rate variation indicates a more stable gas flow rate, resulting in better gas uniformity at the outlet.

[0071] like Figure 3 As shown, in some embodiments, the central guide column 230 can be a hollow cylindrical structure. The outer wall of the central guide column 230 can be used to guide the gas in the first flow channel 210 to the second flow channel 220. The hollow portion 231 of the central guide column 230 can be a space for pipes or other components to pass through.

[0072] This concludes the basic description of the main structures of the gas distribution block structure, the air intake assembly, and the semiconductor process equipment provided by this invention. Next, a specific embodiment will be provided to verify the gas distribution effect of the aforementioned gas distribution block structure 200.

[0073] Combination Figure 3 It is understood that, in one specific embodiment, nitrogen gas can be introduced into the side air inlet 211 of the gas distribution block structure 200. The air inlet flow rate can be between 12000 and 35000 sccm. The inlet pressure corresponding to the side air inlet 211 can be 11 torr. The outlet pressure corresponding to the side air outlet 221 can be 10 torr. The operating temperature of the gas distribution block structure 200 is set to 70°C, and its operating pressure is set to 0.01 torr. The outer diameter of the gas distribution block structure 200 is set to 100 mm, the hollow inner diameter is set to 25 mm, the height is 41 mm, the outer diameter of the inner wall is set to 90 mm, and the inner diameter of the inner wall is set to 30 mm.

[0074] like Figure 6A , Figure 6B and Figure 6CAs shown in the simulation results of the embodiment with an inlet flow rate of 24000 sccm, the velocity vector diagram reveals a significant gas velocity bias within the prior art's gas distribution block structure. The improved gas distribution block structure provided by this invention, thanks to its side inlet and double-layer flow channel design, not only directly eliminates the bias caused by the inlet bend, but also exhibits better gas uniformity at each outlet compared to the prior art structure. In the embodiment with an inlet flow rate of 12000 sccm, compared to the 1.983% velocity difference at each outlet in the prior art structure, the improved gas distribution block structure provided by this invention reduces the velocity difference at each outlet to 0.09%, thereby significantly improving the uniformity of the gas output from each outlet.

[0075] Furthermore, such as Figure 7A and Figure 7B As shown in the simulation results of the embodiment with an intake flow rate of 24000 sccm, the velocity contour plot reveals significant changes in gas velocity within the improved gas distribution block structure as the gas flows through the upper and lower double-layered first and second flow channels 210 and the buffer channel 220. The gas velocity within the buffer channel 240 remains relatively stable. Furthermore, the symmetrical outlet shows that the gas velocity contour plot within the improved gas distribution block structure maintains good symmetry in the lower layer, indicating good gas uniformity at the outlet.

[0076] In summary, the present invention provides a gas distribution block structure, an air intake component, and a semiconductor process apparatus, which can reduce the velocity vector change during gas intake, thereby reducing the generation of eddies, and at the same time avoid the occurrence of flow velocity bias during gas distribution, thereby improving the gas distribution uniformity of each outlet and helping to reduce the uniformity difference of multi-chamber process results.

[0077] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0078] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas distribution block structure, characterized in that, include: First flow channel; A side air inlet is located on the side wall of the first flow channel, and its air intake angle is tangent to the outer side wall of the first flow channel. The second flow channel is located below the first flow channel and is connected to the inner wall of the first flow channel via a central guide column; and Multiple side air outlets are located on the sidewall of the second flow channel to allow gas to be output laterally.

2. The gas distribution block structure as described in claim 1, characterized in that, The air intake angle of the side air inlet is between 0° and 15° with the tangent angle of the outer side wall of the first flow channel.

3. The gas distribution block structure as described in claim 1, characterized in that, The first flow channel is a gas equalization chamber with an annular flow channel structure, so that the gas circulates along the outer annular wall of the gas equalization chamber.

4. The gas distribution block structure as described in claim 1, characterized in that, The second flow channel includes a buffer channel, which includes multiple bent structures.

5. The gas distribution block structure as described in claim 4, characterized in that, The buffer channel includes several bending structures within a longitudinal space.

6. The gas distribution block structure as described in claim 1, characterized in that, The diameter of the end of the second flow channel increases as it gets closer to the side outlet.

7. The gas distribution block structure as described in claim 1, characterized in that, The central guide column is a hollow cylindrical structure. Its outer wall is used to guide the gas in the first flow channel to the second flow channel, while its hollow part is a space for pipes or other components to pass through.

8. An air intake assembly, characterized in that, include: Multiple spray plates are used to introduce process gases into each reaction space; as well as The gas distribution block structure as described in any one of claims 1 to 7, wherein its plurality of side gas outlets are connected to the upstream of the plurality of spray plates, for uniformly distributing the process gas to each of the spray plates.

9. The intake assembly as claimed in claim 8, characterized in that, Also includes: Valves are located between the side outlets of each spray plate and its corresponding gas distribution block structure to control the timing of process gas entering the corresponding reaction space.

10. A semiconductor process apparatus, characterized in that, include: Gas source, used to provide process gases; Multiple process chambers are used for process treatment; as well as The air intake assembly as described in claim 8 or 9 is disposed above the process chamber and is used to introduce uniformly distributed process gas into the reaction space within each process chamber for the process treatment.

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