High-power combiner applied to radio frequency power supply
By combining a two-stage combining scheme with lumped and distributed parameter design, the number of combiner input ports is increased and the power capacity is improved, which solves the problem of insufficient power capacity of combiners in the low-frequency band in RF power supplies, and achieves higher current carrying capacity and greater power output.
Patent Information
- Application Number
- CN202511900112.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-16
- Publication Date
- 2026-03-03
AI Technical Summary
Existing RF power combiners have a limited number of combining ports and insufficient power capacity in the low-frequency band, which makes them prone to breakdown or burnout in high-power applications.
A two-stage combining scheme is adopted, combining lumped parameter components (capacitors, inductors) and distributed parameter structures (microstrip lines). The first stage of combining increases the number of input ports, and the second stage of combining improves the power capacity. The current carrying capacity is improved by increasing the cross-sectional area and the number of conductor layers through the conductor microstrip line structure.
It significantly improves the overall performance of the RF power combiner, enabling more combining ports and higher power capacity, while avoiding device damage.
Smart Images

Figure CN121601997A_ABST