Temperature compensation type surface acoustic wave device and preparation method thereof
By setting a double-layer mass loading layer structure in a temperature-compensated surface acoustic wave device, the mass loading effect at the electrode end is enhanced, which solves the problem of limited quality factor improvement in the prior art and achieves a higher quality factor and less stray wave influence.
Patent Information
- Application Number
- CN202411128769.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-16
- Publication Date
- 2026-03-03
AI Technical Summary
In existing technologies for temperature-compensated surface acoustic wave (SAW) devices, the effect of improving the quality factor by changing the mass loading effect at the ends of the interdigital electrodes is limited, and stray waves increase while the quality factor decreases.
A first mass load layer is set in the edge region of the interdigital transducer, and a second mass load layer is set in the temperature compensation layer at a certain distance from the first mass load layer to form a double mass load layer structure. This enhances the mass loading effect at the electrode end, reduces the sound velocity in the edge region, creates a larger sound velocity difference, and suppresses transverse mode clutter.
By using a double-layer mass loading layer structure, the quality factor of temperature-compensated surface acoustic wave devices is significantly improved, the influence of stray waves is reduced, and the device performance is enhanced.
Smart Images
Figure CN121602950A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor device technology, and in particular to a temperature-compensated surface acoustic wave device and its fabrication method. Background Technology
[0002] With the development of wireless communication technology, surface acoustic wave (SAW) devices have gained broad application prospects due to their advantages such as small size, light weight, good stability, and low production cost. Temperature-compensated SAW devices add a temperature compensation layer, which improves the temperature characteristics of the device, but due to material properties, this leads to an increase in stray waves and a decrease in the quality factor. Existing technologies typically improve the quality factor of SAW devices by changing the mass loading effect at the ends of the interdigital electrodes. However, traditional methods usually only place a single mass loading layer above the ends of the interdigital electrodes, which has a limited effect on improving the quality factor. Summary of the Invention
[0003] The purpose of this application is to provide a temperature-compensated surface acoustic wave (SAW) device and its fabrication method, thereby improving the quality factor of the temperature-compensated SAW device.
[0004] To achieve the above objectives, this application provides a temperature-compensated surface acoustic wave device, comprising: a piezoelectric substrate, an interdigital transducer located on one side surface of the piezoelectric substrate, and a temperature compensation layer; the temperature compensation layer covers the interdigital transducer;
[0005] The interdigitated transducer includes two first busbars arranged opposite each other; at least two first electrodes are disposed between the two first busbars; each first electrode includes a first end, a second end opposite to the first end, and an intermediate portion located between the first end and the second end; the first end contacts the first busbar, and the first ends of two adjacent first electrodes contact different first busbars; a gap exists between the second end and another first busbar, the gap forming a gap region extending in a direction parallel to the first busbar;
[0006] The second end forms an edge region extending in a direction parallel to the first busbar, and the middle part forms a middle region extending in a direction parallel to the first busbar; the sound wave velocity in the middle region is less than the sound wave velocity in the gap region.
[0007] A first mass load layer is provided on the surface of the second end away from the piezoelectric substrate, and on the surface of the adjacent first electrode away from the piezoelectric substrate at the position corresponding to the second end. A second mass load layer is provided inside the temperature compensation layer at the position corresponding to the first mass load layer. There is a gap between the second mass load layer and the first mass load layer, so that the sound wave velocity in the edge region is less than the sound wave velocity in the middle region.
[0008] Optionally, the second mass load layer covers all of the first mass load layers.
[0009] Optionally, the width of the second mass load layer is greater than or equal to the width of the first mass load layer.
[0010] Optionally, both the first mass load layer and the second mass load layer are metal layers.
[0011] Optionally, the temperature-compensated surface acoustic wave device further includes at least two reflective gratings located on one side of the piezoelectric substrate, the reflective gratings being located on both sides of the interdigital transducer.
[0012] Optionally, the reflective grid includes two second busbars arranged opposite each other; a second electrode is disposed between the two second busbars; and the two ends of the second electrode are respectively in contact with the two second busbars.
[0013] Optionally, the temperature-compensated surface acoustic wave device further includes a metal electrical connection layer located on the surface of the temperature compensation layer facing away from the piezoelectric substrate.
[0014] Optionally, the temperature-compensated surface acoustic wave device further includes a protective layer located on the surface of the metal electrical connection layer facing away from the piezoelectric substrate.
[0015] To achieve the above objectives, this application also provides a method for fabricating a temperature-compensated surface acoustic wave device, comprising:
[0016] An interdigitated transducer is formed on one surface of a piezoelectric substrate; the interdigitated transducer includes two first busbars disposed opposite each other; at least two first electrodes are disposed between the two first busbars; each first electrode includes a first end, a second end opposite to the first end, and an intermediate portion located between the first end and the second end; the first end contacts the first busbar, and the first ends of two adjacent first electrodes contact different first busbars; a gap exists between the second end and another first busbar, the gap forming a gap region extending in a direction parallel to the first busbar; the second end forms an edge region extending in a direction parallel to the first busbar, and the intermediate portion forms an intermediate region extending in a direction parallel to the first busbar; the acoustic velocity in the intermediate region is less than the acoustic velocity in the gap region.
[0017] A first mass load layer is formed on the surface of the second end facing away from the piezoelectric substrate, and on the surface of the adjacent first electrode facing away from the piezoelectric substrate at the position corresponding to the second end;
[0018] A temperature compensation layer is formed on the surface of the interdigital transducer and the first mass load layer away from the piezoelectric substrate to cover the interdigital transducer, thereby obtaining a temperature-compensated surface acoustic wave device. A second mass load layer is disposed inside the temperature compensation layer at a position corresponding to the first mass load layer, and there is a gap between the second mass load layer and the first mass load layer, so that the acoustic wave velocity in the edge region is less than the acoustic wave velocity in the middle region.
[0019] Optionally, forming a temperature compensation layer covering the interdigital transducer on the surface of the interdigital transducer and the first mass load layer facing away from the piezoelectric substrate, to obtain a temperature-compensated surface acoustic wave device, includes:
[0020] A first temperature compensation layer is formed on the surface of the interdigital transducer and the first mass load layer facing away from the piezoelectric substrate, covering the interdigital transducer;
[0021] A second mass load layer is formed on the surface of the first temperature compensation layer away from the piezoelectric substrate at a position corresponding to the first mass load layer, such that the acoustic wave velocity in the edge region is less than the acoustic wave velocity in the middle region.
[0022] A second temperature compensation layer is formed on the surface of the second mass load layer away from the piezoelectric substrate, covering the first temperature compensation layer, to obtain the temperature-compensated surface acoustic wave device.
[0023] Obviously, the temperature-compensated surface acoustic wave (SAW) device provided in this application has a first mass load layer on the electrode surface in the edge region, and a second mass load layer disposed at a certain distance from the first mass load layer inside the temperature compensation layer above the edge region. This double-layer mass load layer structure enhances the mass loading effect at the electrode ends, reducing the sound velocity in the edge region. This results in a larger sound velocity difference between different regions of the temperature-compensated SAW device, better suppressing transverse mode clutter and reducing the influence of stray waves, thereby improving the quality factor. This application also provides a method for fabricating a temperature-compensated SAW device, which produces a device with a high quality factor. Attached Figure Description
[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0025] Figure 1 A top view of a temperature-compensated surface acoustic wave device provided in an embodiment of this application;
[0026] Figure 2 for Figure 1 Cross-sectional view from A to A';
[0027] Figure 3 for Figure 1 Cross-sectional view from B to B';
[0028] Figure 4 This is a flowchart illustrating a method for fabricating a temperature-compensated surface acoustic wave device, as provided in an embodiment of this application.
[0029] The annotations in the attached figures are explained as follows:
[0030] 1-Piezoelectric substrate; 2-First busbar; 3-First electrode; 31-First end; 32-Second end; 33-Middle part; 4-First mass load layer; 5-Second mass load layer; 6-Reflective grating; 61-Second busbar; 62-Second electrode; 7-Temperature compensation layer. Detailed Implementation
[0031] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0032] Please refer to Figures 1 to 3 , Figure 1 This is a top view of a temperature-compensated surface acoustic wave device provided in an embodiment of this application. Figure 2 for Figure 1 Cross-sectional view from A to A' Figure 3 for Figure 1 A cross-sectional view from B to B' shows that the temperature-compensated surface acoustic wave device may include: a piezoelectric substrate 1, an interdigital transducer located on one side surface of the piezoelectric substrate 1, and a temperature compensation layer 7; the temperature compensation layer 7 covers the interdigital transducer.
[0033] The interdigitated transducer includes two first busbars 2 arranged opposite to each other; at least two first electrodes 3 are arranged between the two first busbars 2; each first electrode 3 includes a first end 31, a second end 32 opposite to the first end 31, and an intermediate portion 33 located between the first end 31 and the second end 32; the first end 31 contacts the first busbar 2, and the first ends 31 of two adjacent first electrodes 3 contact different first busbars 2; the second end 32 has a gap with another first busbar 2, and the gap forms a gap region extending in a direction parallel to the first busbar 2;
[0034] The second end 32 forms an edge region extending in a direction parallel to the first generatrix 2, and the middle part 33 forms a middle region extending in a direction parallel to the first generatrix 2; the sound wave velocity in the middle region is less than the sound wave velocity in the gap region.
[0035] The second end 32 is away from the surface of the piezoelectric substrate 1, and the adjacent first electrode 3 at the position corresponding to the second end 32 is also away from the surface of the piezoelectric substrate 1. A first mass load layer 4 is provided, and a second mass load layer 5 is provided inside the temperature compensation layer 7 at the position corresponding to the first mass load layer 4. There is a gap between the second mass load layer 5 and the first mass load layer 4, so that the sound wave velocity in the edge region is less than the sound wave velocity in the middle region.
[0036] It should be noted that in this embodiment, at least two first electrodes 3 are provided between the two first busbars 2. Typically, the two first busbars 2 are arranged in parallel. The first electrodes 3 are usually rectangular, and the direction of the parallel line of the long side of the first electrode 3 is perpendicular to the direction of the parallel line of the first busbar 22. Multiple first electrodes 3 are parallel to each other, and a certain gap is left between adjacent first electrodes. In this embodiment, the first electrode 3 needs to contact one of the first busbars 2 to achieve electrical connection with that first busbar 2. When the first end 31 of one first electrode 3 contacts one of the first busbars 2, the first end 31 of the first electrode 3 adjacent to that first electrode 3 needs to contact the other first busbar 2. Since the first ends 31 of adjacent first electrodes 3 alternately contact the two first busbars 2, the interdigital transducer in this embodiment includes two gap regions and two edge regions, with the middle region located between the two edge regions. That is, along the direction of the parallel line of the first electrode 3, the interdigital transducer is sequentially divided into a gap region, an edge region, a middle region, an edge region, and a gap region.
[0037] Due to the presence of gaps in the gap region, the sound wave velocity is usually the highest in the gap region. In addition, other methods can be used in this embodiment to make the middle region and the gap region have a sound velocity difference.
[0038] This embodiment does not limit the specific location of the second mass load layer 5 inside the temperature compensation layer 7. The second mass load layer 5 may, but is not limited to, be located in the middle region inside the temperature compensation layer 7.
[0039] This embodiment does not limit the specific structure of the second mass load layer 5, as long as there is a second mass load layer 5 above the first mass load layer 4 at the position corresponding to the first mass load layer 4. For example, it can include multiple second mass load layers 5, with each second mass load layer 5 corresponding to a first mass load layer 4; or it can be as follows: Figure 3 As shown, it includes a second mass load layer 5, which covers all of the first mass load layers 4.
[0040] This embodiment does not limit the specific size of the second mass load layer 5, for example, Figure 2 As shown, the width of the second mass load layer 5 can be greater than or equal to the width of the first mass load layer 4.
[0041] This embodiment does not limit the specific materials of the first mass load layer 4 and the second mass load layer 5. For example, both the first mass load layer 4 and the second mass load layer 5 can be metal layers, or other high-density dielectric layers can be used. In this embodiment, the first mass load layer 4 and the second mass load layer 5 can be made of the same material or different materials.
[0042] Furthermore, the temperature-compensated surface acoustic wave device in this embodiment may further include at least two reflective gratings 6 located on one side of the piezoelectric substrate 1, with the reflective gratings 6 respectively located on both sides of the interdigital transducer. It should be noted that in this embodiment, reflective gratings 6 are provided on both sides of the interdigital transducer to reflect sound waves. When the sound waves from the interdigital transducer propagate to the reflective gratings 6, they can be reflected back, thereby reducing sound wave leakage.
[0043] This embodiment does not limit the specific structure of the reflective grating 6, as long as it can reflect sound waves. For example, the reflective grating 6 may include two second busbars 61 arranged opposite to each other; a second electrode 62 is arranged between the two second busbars 61; and the two ends of the second electrode 62 are respectively in contact with the two second busbars 61.
[0044] Furthermore, the temperature-compensated surface acoustic wave device in this embodiment may also include a metal electrical connection layer located on the surface of the temperature compensation layer 7 facing away from the piezoelectric substrate 1. It should be noted that this embodiment, by providing the metal electrical connection layer, enables the connection between the interdigital transducer and the external circuitry.
[0045] Furthermore, the temperature-compensated surface acoustic wave device in this embodiment may also include a protective layer located on the surface of the metal electrical connection layer facing away from the piezoelectric substrate 1. It should be noted that by providing the protective layer, this embodiment can prevent damage to the temperature-compensated surface acoustic wave device caused by external environmental factors, thereby improving the service life of the temperature-compensated surface acoustic wave device.
[0046] Based on the above embodiments, this application provides a first mass load layer on the electrode surface in the edge region, and a second mass load layer is provided at a certain distance from the first mass load layer inside the temperature compensation layer above the edge region. This double-layer mass load layer structure enhances the mass loading effect at the electrode end, reducing the sound velocity in the edge region. This results in a larger sound velocity difference between different regions of the temperature-compensated surface acoustic wave (SAW) device, better suppressing transverse mode clutter and reducing the influence of stray waves, thereby improving the quality factor. (Because a larger sound velocity difference can form piston vibration modes over a wider frequency range, suppressing transverse mode propagation.)
[0047] Please refer to Figure 4 , Figure 4 A flowchart illustrating a method for fabricating a temperature-compensated surface acoustic wave (SAW) device, as provided in this application embodiment, includes:
[0048] S101: An interdigital transducer is formed on one side surface of a piezoelectric substrate; the interdigital transducer includes two first busbars disposed opposite to each other; at least two first electrodes are disposed between the two first busbars; each first electrode includes a first end, a second end opposite to the first end, and an intermediate portion located between the first end and the second end; the first end is in contact with the first busbar, and the first ends of two adjacent first electrodes are in contact with different first busbars; a gap is formed between the second end and another first busbar, the gap forming a gap region extending in a direction parallel to the first busbar; the second end forms an edge region extending in a direction parallel to the first busbar, and the intermediate portion forms an intermediate region extending in a direction parallel to the first busbar; the acoustic wave velocity in the intermediate region is less than the acoustic wave velocity in the gap region.
[0049] Furthermore, to reduce acoustic wave leakage, this embodiment, after forming an interdigital transducer on one side of the piezoelectric substrate, may further include: forming at least two reflective gratings on the same side of the piezoelectric substrate where the interdigital transducer is located, with the reflective gratings respectively located on both sides of the interdigital transducer. This embodiment does not intend to limit the specific structure of the reflective gratings; reference can be made to the above-described embodiment of the temperature-compensated surface acoustic wave device, which will not be repeated here.
[0050] S102: A first mass load layer is formed on the surface of the second end away from the piezoelectric substrate and on the surface of the adjacent first electrode at the position corresponding to the second end away from the piezoelectric substrate.
[0051] This embodiment does not limit the specific material of the first mass load layer. You can refer to the above embodiment of the temperature-compensated surface acoustic wave device, which will not be repeated here.
[0052] S103: A temperature compensation layer covering the interdigital transducer is formed on the surface of the interdigital transducer and the first mass load layer away from the piezoelectric substrate, thereby obtaining a temperature-compensated surface acoustic wave device; a second mass load layer is disposed inside the temperature compensation layer at a position corresponding to the first mass load layer, and there is a gap between the second mass load layer and the first mass load layer, so that the acoustic wave velocity in the edge region is less than the acoustic wave velocity in the middle region.
[0053] This embodiment is not limited to the specific way in which the second mass load layer is formed inside the temperature compensation layer, as long as the second mass load layer is located inside the temperature compensation layer at the position corresponding to the first mass load layer. For example, it can be:
[0054] A first temperature compensation layer covering the interdigital transducer is formed on the surface of the interdigital transducer and the first mass load layer on the side away from the piezoelectric substrate.
[0055] A second mass load layer is formed on the surface of the first temperature compensation layer away from the piezoelectric substrate at the position corresponding to the first mass load layer, so that the acoustic wave velocity in the edge region is less than the acoustic wave velocity in the middle region.
[0056] A second temperature compensation layer covering the first temperature compensation layer is formed on the surface of the second mass load layer away from the piezoelectric substrate, thereby obtaining a temperature-compensated surface acoustic wave device.
[0057] This embodiment does not limit the specific location of the second mass load layer inside the temperature compensation layer. You can refer to the above embodiment of the temperature-compensated surface acoustic wave device, which will not be repeated here.
[0058] Furthermore, in order to achieve the connection between the interdigital transducer and the external circuit, after forming a temperature compensation layer covering the interdigital transducer on the side of the interdigital transducer and the first mass load layer away from the piezoelectric substrate in this embodiment, it may also include: forming a metal electrical connection layer on the surface of the temperature compensation layer away from the piezoelectric substrate.
[0059] Furthermore, in order to prevent damage to the temperature-compensated surface acoustic wave device caused by external environmental factors and thereby improve the service life of the temperature-compensated surface acoustic wave device, this embodiment may further include forming a protective layer on the surface of the metal electrical connection layer away from the piezoelectric substrate after forming a metal electrical connection layer on the surface of the temperature compensation layer away from the piezoelectric substrate.
[0060] Furthermore, in order to ensure the reliability of the temperature-compensated surface acoustic wave device, after forming a protective layer on the surface of the metal electrical connection layer away from the piezoelectric substrate in this embodiment, the temperature-compensated surface acoustic wave device can be tested and tuned to obtain the final temperature-compensated surface acoustic wave device.
[0061] Based on the above embodiments, the temperature-compensated surface acoustic wave (SAW) device prepared by the method provided in this application has a higher quality factor because a first mass load layer is provided on the electrode surface in the edge region of the temperature-compensated SAW device, and a second mass load layer is provided at a certain distance from the first mass load layer inside the temperature compensation layer above the edge region. The mass loading effect at the electrode end is enhanced by the double-layer mass load layer structure, thereby reducing the sound velocity in the edge region. This results in a greater sound velocity difference in different regions of the temperature-compensated SAW device, which can better suppress transverse mode clutter of the temperature-compensated SAW device and reduce the influence of stray waves.
[0062] This document uses specific examples to illustrate the principles and implementation methods of this application. The various embodiments are progressive, with each embodiment focusing on its differences from others. Similar or identical parts between embodiments can be referred to interchangeably. The descriptions of the embodiments above are merely illustrative of the method and core ideas of this application. For those skilled in the art, various improvements and modifications can be made to this application without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of this application.
[0063] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.
Claims
1. A temperature-compensated surface acoustic wave device, characterized in that, include: A piezoelectric substrate, an interdigital transducer located on one side surface of the piezoelectric substrate, and a temperature compensation layer; the temperature compensation layer covers the interdigital transducer; The interdigitated transducer includes two first busbars arranged opposite each other; at least two first electrodes are disposed between the two first busbars; each first electrode includes a first end, a second end opposite to the first end, and an intermediate portion located between the first end and the second end; the first end contacts the first busbar, and the first ends of two adjacent first electrodes contact different first busbars; a gap exists between the second end and another first busbar, the gap forming a gap region extending in a direction parallel to the first busbar; The second end forms an edge region extending in a direction parallel to the first busbar, and the middle part forms a middle region extending in a direction parallel to the first busbar; the sound wave velocity in the middle region is less than the sound wave velocity in the gap region. A first mass load layer is provided on the surface of the second end away from the piezoelectric substrate, and on the surface of the adjacent first electrode away from the piezoelectric substrate at the position corresponding to the second end. A second mass load layer is provided inside the temperature compensation layer at the position corresponding to the first mass load layer. There is a gap between the second mass load layer and the first mass load layer, so that the sound wave velocity in the edge region is less than the sound wave velocity in the middle region.
2. The temperature-compensated surface acoustic wave device according to claim 1, characterized in that, The second mass load layer covers all of the first mass load layers.
3. The temperature-compensated surface acoustic wave device according to claim 2, characterized in that, The width of the second mass load layer is greater than or equal to the width of the first mass load layer.
4. The temperature-compensated surface acoustic wave device according to claim 1, characterized in that, Both the first mass load layer and the second mass load layer are metal layers.
5. The temperature-compensated surface acoustic wave device according to claim 1, characterized in that, Also includes: At least two reflective gratings are located on one side of the piezoelectric substrate, and the reflective gratings are located on both sides of the interdigital transducer.
6. The temperature-compensated surface acoustic wave device according to claim 5, characterized in that, The reflective grid includes two second busbars arranged opposite each other; a second electrode is disposed between the two second busbars; and the two ends of the second electrode are respectively in contact with the two second busbars.
7. The temperature-compensated surface acoustic wave device according to claim 1, characterized in that, Also includes: A metal electrical connection layer located on the surface of the temperature compensation layer opposite to the piezoelectric substrate.
8. The temperature-compensated surface acoustic wave device according to claim 7, characterized in that, Also includes: A protective layer located on the surface of the metal electrical connection layer opposite to the piezoelectric substrate.
9. A method for fabricating a temperature-compensated surface acoustic wave device, characterized in that, include: An interdigitated transducer is formed on one surface of a piezoelectric substrate; the interdigitated transducer includes two first busbars disposed opposite each other; at least two first electrodes are disposed between the two first busbars; each first electrode includes a first end, a second end opposite to the first end, and an intermediate portion located between the first end and the second end; the first end contacts the first busbar, and the first ends of two adjacent first electrodes contact different first busbars; a gap exists between the second end and another first busbar, the gap forming a gap region extending in a direction parallel to the first busbar; the second end forms an edge region extending in a direction parallel to the first busbar, and the intermediate portion forms an intermediate region extending in a direction parallel to the first busbar; the acoustic velocity in the intermediate region is less than the acoustic velocity in the gap region. A first mass load layer is formed on the surface of the second end facing away from the piezoelectric substrate, and on the surface of the adjacent first electrode facing away from the piezoelectric substrate at the position corresponding to the second end; A temperature compensation layer is formed on the surface of the interdigital transducer and the first mass load layer on the side away from the piezoelectric substrate to cover the interdigital transducer, thereby obtaining a temperature-compensated surface acoustic wave device; a second mass load layer is disposed inside the temperature compensation layer at a position corresponding to the first mass load layer, and there is a gap between the second mass load layer and the first mass load layer, so that the acoustic wave velocity in the edge region is less than the acoustic wave velocity in the middle region.
10. The method for fabricating a temperature-compensated surface acoustic wave device according to claim 9, characterized in that, A temperature compensation layer covering the interdigital transducer is formed on the surface of the interdigital transducer and the first mass load layer on the side opposite to the piezoelectric substrate, thereby obtaining a temperature-compensated surface acoustic wave device, comprising: A first temperature compensation layer is formed on the surface of the interdigital transducer and the first mass load layer facing away from the piezoelectric substrate, covering the interdigital transducer; A second mass load layer is formed on the surface of the first temperature compensation layer away from the piezoelectric substrate at a position corresponding to the first mass load layer, such that the acoustic wave velocity in the edge region is less than the acoustic wave velocity in the middle region. A second temperature compensation layer is formed on the surface of the second mass load layer away from the piezoelectric substrate, covering the first temperature compensation layer, to obtain the temperature-compensated surface acoustic wave device.