Non-contact semiconductor die singulation process

Abstract

A non-contact semiconductor die singulation process utilizes compressed air to separate a first portion of a semiconductor wafer from a second portion of the semiconductor wafer. During the non-contact semiconductor die singulation process, the semiconductor wafer is placed on a dicing tape. A channel is formed along various scribe lines in the semiconductor wafer. When the channel is formed, a compressed air tool applies compressed air along the length of the channel. Pressure from the compressed air deforms the semiconductor wafer. When the semiconductor wafer is deformed, the semiconductor wafer breaks or cracks along the length of the scribe line, thereby separating the first portion from the second portion of the semiconductor wafer.

Description

Background Technology

[0001] Semiconductor die dicing is the process of cutting and separating individual semiconductor dies from a semiconductor wafer. For example, a semiconductor wafer is typically mounted on a dicing tape (or die attachment film), and a mechanical saw or blade is used to cut the wafer along various predefined lines (called scribing) that define individual semiconductor dies. However, due to the fragile nature of semiconductor wafers, one or more surfaces and / or sidewalls of each individual semiconductor die may fracture or break during the dicing process.

[0002] To reduce the risk of individual semiconductor dies breaking or fracturing, the cutting speed of the blade can be reduced. Lowering the cutting speed reduces blade jitter, which typically causes semiconductor dies to break or fracture. However, if the cutting speed is reduced, the number of semiconductor dies that can be sliced ​​within a given time frame will also decrease. Additionally, reducing the cutting speed will shorten the blade's lifespan.

[0003] Therefore, for die dicing processes, it would be beneficial to reduce the risk of semiconductor die breakage or fracture without reducing the number of cells produced within a given time period. Summary of the Invention

[0004] This application describes a non-contact semiconductor die dicing process. Compared to current semiconductor die dicing processes, the semiconductor die dicing process described herein reduces the risk of individual semiconductor dies becoming fragmented or broken during the semiconductor die dicing process.

[0005] In one example, this non-contact semiconductor die dicing process uses compressed air to separate individual semiconductor dies from semiconductor wafers. For example, during the separation of the semiconductor die from the semiconductor wafer, the semiconductor wafer is attached or adhered to a dicing tape (or die attachment film). A laser (or other dicing mechanism) forms trenches or channels on the exposed surface of the semiconductor wafer. In one example, the trenches or channels are formed on and / or above a scribe line on the semiconductor wafer.

[0006] Once the trench or channel has been formed, compressed air is applied along it. The pressure from the compressed air deforms the semiconductor wafer (e.g., downwards from the exposed surface). As the semiconductor wafer deforms, it cracks along the channel and the associated scribe line. In one example, the expansion properties of the scribe line and the non-contact nature of applying air along the channel and scribe line reduce the risk that the semiconductor die will become fragmented or broken. In the event that fragments or cracks do occur, these fragments or cracks are smaller than those resulting from blade cutting.

[0007] Therefore, various examples of the present invention describe a method for dicing semiconductor dies from a semiconductor wafer. As will be explained in more detail, the method includes forming a channel along a scribe line on the semiconductor wafer. In one example, the semiconductor wafer includes a plurality of undivided semiconductor dies, and the scribe line at least partially defines the boundary of a single semiconductor die among the plurality of semiconductor dies. Non-contact pressure is applied along the channel to form a crack along the scribe line. The crack at least partially separates the single semiconductor die from the plurality of semiconductor dies.

[0008] Other examples describe a semiconductor die dicing method. This semiconductor die dicing method includes coupling a semiconductor wafer to a dicing tape. In one example, the semiconductor wafer includes multiple scribe lines. The method also includes removing at least a portion of the semiconductor wafer located above at least one of the multiple scribe lines. Pressure is then applied to the at least portion of the semiconductor wafer located above the at least one scribe line. The pressure causes a first portion of the semiconductor wafer to separate from a second portion of the semiconductor wafer.

[0009] In yet another example, this disclosure describes forming a channel on the surface of a semiconductor wafer. In one example, the channel is formed above a scribe line on the semiconductor wafer using a channel forming component. Then, a non-contact pressure is applied along the channel using a pressure applying component. In one example, this non-contact pressure causes a first portion of the semiconductor wafer to separate from a second portion of the semiconductor wafer.

[0010] The present invention is provided to introduce, in a simplified form, some concepts that will be further described in the detailed embodiments described below. The present invention is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Attached Figure Description

[0011] The following figures illustrate examples of non-restrictive and non-exhaustive properties.

[0012] Figure 1 An example of a semiconductor wafer is shown.

[0013] Figure 2A An example is illustrated of a channel formed in a semiconductor wafer and having a first shape and / or size, according to an example.

[0014] Figure 2B An example is illustrated of a channel formed in a semiconductor wafer and having a second shape and / or size according to a second example.

[0015] Figure 2C An example is illustrated of a channel formed in a semiconductor wafer and having a third shape and / or size, according to a third example.

[0016] Figure 3 A perspective view of a portion of a semiconductor wafer, as illustrated in the example, is shown.

[0017] Figure 4 This illustrates how the pressure from compressed air and the elastic deformation properties of the cutting strip, according to the example, cause... Figure 3 The first part of the semiconductor wafer is separated from the second part of the semiconductor wafer.

[0018] Figure 5 This illustrates how several compressed air tools, based on examples, can be used as part of a non-contact semiconductor die dicing process.

[0019] Figure 6 An example is provided for performing a non-contact semiconductor die dicing process. Detailed Implementation

[0020] In the following detailed description, reference is made to the accompanying drawings, which form part of the detailed description, and specific embodiments or examples are shown by way of illustration. These aspects may be combined, other aspects may be utilized, and structural changes may be made without departing from this disclosure. Therefore, the following detailed description should not be considered limiting, and the scope of this disclosure is defined by the appended claims and their equivalents.

[0021] As part of the semiconductor die dicing process, individual semiconductor dies are separated from semiconductor wafers. This semiconductor die dicing process typically involves mounting the semiconductor wafer on a dicing tape. In some examples, a mechanical saw cuts the semiconductor wafer along various scribe lines that define the individual semiconductor dies. However, due to the fragile nature of the semiconductor wafer, one or more surfaces and / or sidewalls of each individual semiconductor die may fracture or break during this process.

[0022] As previously described, the risk of individual semiconductor dies breaking or fracturing can be reduced by slowing down or decreasing the cutting speed of the blade. However, if the cutting speed is reduced, the number of semiconductor dies that can be divided within a given time frame will also decrease. Additionally, reducing the cutting speed will shorten the blade's lifespan.

[0023] To address the aforementioned issues, this application describes a non-contact semiconductor die dicing process that reduces the risk of individual semiconductor dies becoming fragmented or broken during the dicing process. In one example, this non-contact semiconductor die dicing process uses compressed air to separate individual semiconductor dies from the semiconductor wafer.

[0024] For example, during the separation of a semiconductor die from a semiconductor wafer, the semiconductor wafer is attached or adhered to a dicing tape. A laser or other dicing mechanism forms trenches or channels on the exposed surface of the semiconductor wafer. In one example, the trenches or channels are formed on and / or above a scribe line on the semiconductor wafer.

[0025] Once the trench or channel has been formed, compressed air is applied along the channel. The pressure from the compressed air deforms the semiconductor wafer (e.g., downwards or away from the compressed air). As the semiconductor wafer deforms, it cracks along the channel and the associated scribe line. In one example, the expansion properties of the scribe line and the non-contact nature of applying compressed air along the channel and scribe line reduce the risk that the semiconductor die will become fragmented or broken. In the event that fragments or cracks do occur, these fragments or cracks are smaller than those that would occur due to blade cutting.

[0026] Therefore, many technical benefits can be achieved, including but not limited to: reducing the number and / or size of fragments or cracks in the semiconductor die compared to current semiconductor die dicing processes, thereby improving the reliability of the semiconductor die; increasing the number of cells produced during a specific time frame compared to current semiconductor die dicing processes; and reducing the incidence of burr generation that occurs during current semiconductor die dicing processes.

[0027] Regarding Figures 1 to 6 These examples and others are shown and described in more detail.

[0028] Figure 1 A semiconductor wafer 100 according to an example is illustrated. In one example, the semiconductor wafer 100 includes a plurality of semiconductor dies 120. The semiconductor dies 120 are manufactured using any suitable manufacturing process. Additionally, the semiconductor dies 120 may have any desired shape and / or size.

[0029] In addition, such as Figure 1 As shown, the semiconductor wafer 100 includes a plurality of scribe lines 110. In one example, the scribe lines 110 are arranged in a grid and define one or more boundaries of each semiconductor die 120. For example, during the dicing process described herein, each semiconductor die 120 will be separated from the semiconductor wafer 100 and from other semiconductor dies 120 based on cuts and / or slits that will be formed along each scribe line 110.

[0030] In one example, and as will be described in more detail herein, after semiconductor wafer 100 and / or semiconductor die 120 have been manufactured, semiconductor wafer 100 is positioned on a dicing strip (e.g., dicing strip 330). Figure 3The semiconductor wafer 100 is attached to the dicing strip (or die attachment film) and / or adhered to it. Once the semiconductor wafer 100 has been attached to the dicing strip, a dicing mechanism is used to form channels on and / or over each scribe line 110. In one example, the dicing mechanism is a laser. In another example, the dicing mechanism is a saw. While lasers and saws are specifically mentioned, channels can be formed using any suitable component.

[0031] In one example, the channel can have any shape, depth, and / or width. For example and reference Figure 2A , Figure 2A An example is illustrated of a channel 210 formed in a semiconductor wafer 200 and having a first shape and / or size, according to a first example. In one example, the semiconductor wafer 200 is similar to... Figure 1 The semiconductor wafer 100 shown and described. For example, the semiconductor wafer 200 includes a first layer 240 (or a metal layer) and a second layer 250 (or a silicon layer). In one example, the first layer 240 and the second layer 250 are disposed on a diced tape 260.

[0032] exist Figure 2A In the example shown, the channel 210 is square in shape and has a depth equal to or substantially equal to the thickness of the first layer 240. For example, if the first layer 240 has a thickness of 7 micrometers, then the depth of the channel 240 is 7 micrometers.

[0033] Figure 2B An example is illustrated of a channel 220 formed in a semiconductor wafer 200 and having a second shape and / or size, according to a second example. Figure 2B In the example shown, channel 220 is triangular or V-shaped. Figure 2C An example is illustrated of a channel 230 formed in a semiconductor wafer 200 and having a third shape and / or size, according to a third example. Figure 2C In the example shown, channel 230 is circular. While various shapes and sizes are shown, the channel can have any shape and / or size.

[0034] For example, such as Figures 2A to 2C As shown, the channel does not extend completely through the semiconductor wafer 200. For example, the dicing mechanism makes the channel extend along each scribe line (e.g., scribe line 110). Figure 1 The channel is formed in or on a first surface of the semiconductor wafer 200 (e.g., a metal surface). Once the channel has been formed, a compressed air tool (or non-contact cutting equipment) applies compressed air along the channel.

[0035] Re-reference Figure 1Compressed air, along with the elastic deformation properties of the dicing tape, bends the semiconductor wafer 100. As the semiconductor wafer 100 bends, cracks form along the scribe lines 110 where compressed air is applied. In one example, the cracks propagate along the entire length of the scribe line 110, thereby separating at least a portion of the semiconductor die 100 from another portion of the semiconductor die. This process is repeated along each channel associated with each scribe line 110 until a single semiconductor die 120 has been separated from the semiconductor wafer 100.

[0036] In one example, the use of compressed air allows for control over the propagation of cracks along scribe line 110. For example, the amount of pressure provided by the compressed air and / or the speed at which the compressed air tool moves along the surface of the semiconductor wafer 100 can be controlled or varied to reduce the risk of fragmentation during non-contact semiconductor die dicing processes. Therefore, backside and / or sidewall fragmentation will be reduced or eliminated compared to current semiconductor die dicing processes using blades.

[0037] Figure 3 A perspective view of a portion of a semiconductor wafer 300 is shown, according to an example. In one example, this portion of the semiconductor wafer 300 is about... Figure 1 A portion of the semiconductor wafer 100 shown and described.

[0038] In this example, the semiconductor wafer 300 includes a first layer 310 disposed on or above the silicon layer 320. In one example, the first layer 310 is a metal layer. Although the first layer 310 is specifically shown and described, the semiconductor wafer 300 may include any number of layers due to the semiconductor wafer manufacturing process.

[0039] like Figure 3 As shown, channel 340 has been formed in the first layer 310. In one example, channel 340 is formed by a laser. In another example, channel 340 is formed by a saw. Although lasers and saws are specifically mentioned, channel 340 can be formed by any other process or mechanism. For example, channel 340 can be formed during a semiconductor wafer fabrication process. Regardless of how channel 340 is formed, in one example, channel 340 is formed on, above, or otherwise associated with scribe line 350.

[0040] In one example, after the channel 340 has been formed, the compressed air tool 360 moves along the channel 340 and applies compressed air 370 to the channel 340 and the associated scribing line 350. In one example, the amount of pressure applied to the channel 340 by the compressed air 370 may vary. For example, the amount of pressure applied by the compressed air 370 may be based at least in part on the thickness of the semiconductor wafer 300. In another example, the amount of pressure applied by the compressed air 370 may be based at least in part on the depth of the channel 340. In yet another example, the amount of pressure applied by the compressed air 370 may be based at least in part on the moving speed of the compressed air tool 360 and / or the position of the compressed air tool 360.

[0041] The moving speed of the compressed air tool 360 and / or the amount of pressure applied by the compressed air 370 may also vary, at least in part, based on the number of semiconductor dies that have been diced from the semiconductor wafer 300. For example, during initial processing, the compressed air tool 360 may apply a first amount of pressure to the semiconductor wafer 300 and / or the compressed air tool 360 may move at a first speed. However, during a second processing or a process that separates individual semiconductor dies from the semiconductor wafer 300, the compressed air tool 360 may apply a second amount of pressure to the semiconductor wafer and / or the compressed air tool 360 may move at a second speed.

[0042] The pressure from compressed air 370 and the elastic deformation properties of the dicing tape 330 cause the semiconductor wafer 300 to deform or bend (e.g., downwards). As the semiconductor wafer 300 deforms, a crack forms along the dicing line 350. In one example, the crack will propagate along the entire length of the dicing line 350, thereby separating a first portion of the semiconductor wafer 300 from a second portion of the semiconductor wafer 300.

[0043] For example, refer to Figure 4 , Figure 4 This illustrates how the pressure from compressed air 370 and the elastic deformation properties of the cutting strip 330, according to the example, cause... Figure 3 The first portion 420 of the semiconductor wafer 300 is separated from the second portion 430 of the semiconductor wafer 300. For example... Figure 4 As shown, when the channel 340 has been formed in the semiconductor wafer 300 and compressed air 370 is applied to the channel 340 by the compressed air tool 360, the pressure applied by the compressed air 370 causes the semiconductor wafer 300 to bend or deform. When the semiconductor wafer 300 bends or deforms, the elastic deformation characteristics of the dicing tape 330 allow the dicing tape 330 to bend together with the semiconductor wafer 300.

[0044] Additionally, when the semiconductor wafer 300 is bent, a slit 410 is formed along a scribe line associated with the channel 340. As a result, the first portion 420 of the semiconductor wafer is separated from the second portion 430 of the semiconductor wafer 300. This process can be repeated to separate each semiconductor die in the semiconductor wafer 300 from the other semiconductor dies.

[0045] Figure 5 The example illustrates how multiple compressed air tools 500 can be used as part of a non-contact semiconductor die dicing process. For instance, once various channels have been formed on a semiconductor wafer 510, a first compressed air tool can be positioned at a first location on the semiconductor wafer 510, and a second compressed air tool can be positioned at a second location on the semiconductor wafer 510.

[0046] Each compressed air tool 500 moves simultaneously over the exposed surface of the semiconductor wafer 510. For example, a first compressed air tool moves from a first position along a first direction (e.g., indicated by at least one dashed arrow) along each channel and / or scribe line. Similarly, a second compressed air tool moves from a second position along either the first or second direction. As each compressed air tool moves along the various channels and scribe lines, portions of the semiconductor wafer 510 are separated from other portions, as previously described.

[0047] Figure 6 A method 600 for performing a non-contact semiconductor die dicing process is illustrated according to an example. In one example, method 600 can be used to separate a first portion of a semiconductor wafer from a second portion of the semiconductor wafer, as described herein.

[0048] In one example, method 600 begins by placing (610) a semiconductor wafer on a dicing tape or otherwise attaching the semiconductor wafer to the dicing tape. The semiconductor wafer is applied to the dicing tape by any suitable component.

[0049] After a semiconductor wafer has been applied to a dicing tape, one or more channels (620) are formed over one or more dicing lines on the semiconductor wafer. In one example, the channels are formed on an exposed surface of the semiconductor wafer and are used to remove one or more layers of the semiconductor wafer. In one example, a laser is used to form one or more channels. In another example, a saw or blade is used to form one or more channels.

[0050] Once at least one of these trenches has been formed, a compressed air tool is positioned over the at least one trench and compressed air is applied (630) along the trench in a first direction. In one example, the pressure from the compressed air, together with the elastic deformation properties of the dicing tape, causes the semiconductor wafer to bend and subsequently break along the scribe line, thereby separating at least a portion of the semiconductor wafer from a second portion of the semiconductor wafer. This process can be repeated multiple times.

[0051] Additionally, a compressed air tool (or another compressed air tool) is positioned over at least one groove and compressed air is applied (640) along the groove in a second direction. The pressure from the compressed air, together with the elastic deformation properties of the dicing strip, causes the semiconductor wafer to bend and subsequently break along the scribe line. As a result, individual semiconductor dies are diced from the semiconductor wafer. Operation 640, like operation 630, can be repeated any number of times.

[0052] After individual semiconductor dies have been diced from the semiconductor wafer, the semiconductor dies are removed from the dicing tape (650). In one example, operation 650 occurs after all semiconductor dies have been diced from the semiconductor wafer. In another example, operation 650 may occur at different times during the non-contact semiconductor die dicing process.

[0053] Based on the foregoing, various examples of the present invention describe a method for dicing semiconductor dies from a semiconductor wafer, the method comprising: forming a channel along a scribe line on the semiconductor wafer, the semiconductor wafer comprising a plurality of undivided semiconductor dies, and the scribe line at least partially defining a boundary of a single semiconductor die among the plurality of semiconductor dies; and applying a non-contact pressure along the channel to form a crack along the scribe line, the crack at least partially separating the single semiconductor die from the plurality of semiconductor dies. In one example, the channel is formed by a laser. In one example, the non-contact pressure is applied using compressed air. In one example, the semiconductor wafer is attached to a dicing tape. In one example, the non-contact pressure and the deformation properties of the dicing tape cause the crack to form along the scribe line. In one example, the method further comprises removing the single semiconductor die from the dicing tape. In one example, the non-contact pressure is a first non-contact pressure and is applied at a first location on the wafer, and wherein the method further comprises applying a second non-contact pressure at a second location on the wafer.

[0054] Various examples also describe a semiconductor die dicing method, the method comprising: coupling a semiconductor wafer to a dicing tape, the semiconductor wafer including a plurality of scribe lines; removing at least a portion of the semiconductor wafer above at least one of the plurality of scribe lines; and applying pressure to the at least portion of the semiconductor wafer above the at least one scribe line to separate a first portion of the semiconductor wafer from a second portion of the semiconductor wafer. In one example, the pressure is a non-contact pressure. In one example, the non-contact pressure is applied using compressed air. In one example, the removed at least portion of the semiconductor wafer is removed by a laser. In one example, the removed at least portion of the semiconductor wafer is removed by a blade. In one example, the method further comprises applying pressure to another portion of the semiconductor wafer above at least another scribe line to separate a third portion of the semiconductor wafer from at least one of the first portion and the second portion of the semiconductor wafer. In one example, the method further comprises removing the third portion of the semiconductor wafer from the dicing tape.

[0055] Additional examples describe a method comprising: forming a channel on a surface of a semiconductor wafer, the channel being formed above a scribe line on the semiconductor wafer using a channel forming component; and applying a non-contact pressure along the channel using a pressure applying component, the non-contact pressure causing a first portion of the semiconductor wafer to separate from a second portion of the semiconductor wafer. In one example, the channel forming component is a laser. In one example, the channel forming component is a blade. In one example, the pressure applying component is compressed air. In one example, the method further comprises coupling the semiconductor wafer to a wafer holding component. In one example, the non-contact pressure is a first non-contact pressure and the pressure applying component is a first pressure applying component, and wherein the method further comprises applying a second non-contact pressure using a second pressure applying component, wherein the first non-contact pressure and the second non-contact pressure are simultaneously applied to the semiconductor wafer.

[0056] The descriptions and illustrations of one or more aspects provided in this disclosure are not intended to limit or restrict the scope of this disclosure in any way. The aspects, examples, and details provided in this disclosure are considered to be the best model sufficient to convey ownership and enable others to form and use the claimed disclosure.

[0057] The claimed disclosure should not be construed as limited to any aspect, example, or detail provided herein. Whether shown and described in combination or separately, various features (both structural and methodological features) are intended to be selectively rearranged, included, or omitted to produce embodiments with a particular set of features. Given the description and examples provided in this application, those skilled in the art will contemplate variations, modifications, and alternatives falling within the spirit of the broader aspects of the overall inventive concept embodied in this application without departing from the wider scope of the claimed disclosure.

[0058] The foregoing has described aspects of this disclosure with reference to schematic flowcharts and / or schematic block diagrams of methods, apparatus, systems, and computer program products according to embodiments of this disclosure. It should be understood that each block of the schematic flowcharts and / or schematic block diagrams, and combinations of blocks in the schematic flowcharts and / or schematic block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a computer processor or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor or other programmable data processing apparatus, form components for implementing the functions and / or actions specified in one or more blocks of the schematic flowcharts and / or schematic block diagrams. Additionally, it is contemplated that aspects of the flowcharts and / or block diagrams can be combined and / or performed in any order.

[0059] The use of names such as "first," "second," etc., to refer to elements in this document does not generally restrict the number or order of these elements. Rather, these designations serve as a way to distinguish two or more elements or instances of elements. Therefore, referencing the first element and the second element does not imply that only two elements can be used or that the first element precedes the second element. Additionally, unless otherwise stated, a group of elements may include one or more elements.

[0060] The terms “at least one of A, B, or C” or “A, B, C, or any combination thereof” used in the specification or claims mean “A, B, or C, or any combination of these elements.” For example, the term may include A, or B, or C, or A and B, or A and C, or A and B and C, or 2A, or 2B, or 2C, or 2A and B, etc. As an additional example, “at least one of A, B, or C” is intended to cover A, B, C, AB, AC, BC, and ABC, as well as multiple identical elements. Similarly, “at least one of A, B, and C” is intended to cover A, B, C, AB, AC, BC, and ABC, as well as multiple identical elements.

[0061] Similarly, as used herein, phrases referring to a list of items linked with “and / or” refer to any combination of those items. For example, “A and / or B” is intended to cover A alone, B alone, or A and B together. As another example, “A, B and / or C” is intended to cover A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B and C together.

Claims

1. A method for dicing semiconductor dies from a semiconductor wafer, the method comprising: A trench is formed on a scribe line of the semiconductor wafer, the semiconductor wafer comprising a plurality of undivided semiconductor dies, and the scribe line at least partially defines the boundary of an individual semiconductor die among the plurality of semiconductor dies; as well as Non-contact pressure is applied along the channel to form a crack along the scribe line, the crack at least partially separating the single semiconductor die from the plurality of semiconductor dies.

2. The method of claim 1, wherein the channel is formed by a laser.

3. The method of claim 1, wherein the non-contact pressure is applied using compressed air.

4. The method of claim 1, wherein the semiconductor wafer is attached to the dicing tape.

5. The method of claim 4, wherein the non-contact pressure and the deformation characteristics of the cutting strip cause the crack to form along the scribing line.

6. The method of claim 4, further comprising removing the individual semiconductor die from the dicing strip.

7. The method of claim 1, wherein the non-contact pressure is a first non-contact pressure and is applied at a first location on the wafer, and wherein the method further comprises applying a second non-contact pressure at a second location on the wafer.

8. A method for dividing a semiconductor die, the method comprising: A semiconductor wafer is coupled to a dicing tape, the semiconductor wafer comprising multiple scribe lines; Remove at least a portion of the semiconductor wafer located above at least one of the plurality of scribe lines; as well as Pressure is applied to at least a portion of the semiconductor wafer located above at least one scribing line to separate the first portion of the semiconductor wafer from the second portion of the semiconductor wafer.

9. The method of claim 8, wherein the pressure is a non-contact pressure.

10. The method of claim 9, wherein the non-contact pressure is applied using compressed air.

11. The method of claim 8, wherein the at least portion of the semiconductor wafer removed is removed by a laser.

12. The method of claim 8, wherein the at least portion of the semiconductor wafer removed is removed by a blade.

13. The method of claim 8, further comprising applying pressure to another portion of the semiconductor wafer located above at least another scribe line to separate the third portion of the semiconductor wafer from at least one of the first portion and the second portion of the semiconductor wafer.

14. The method of claim 13, further comprising removing the third portion of the semiconductor wafer from the dicing strip.

15. A method, the method comprising: A channel is formed on the surface of a semiconductor wafer, the channel being formed above a scribe line on the semiconductor wafer using a channel forming component; as well as A pressure-applying component applies non-contact pressure along the channel, the non-contact pressure causing a first portion of the semiconductor wafer to separate from a second portion of the semiconductor wafer.

16. The method of claim 15, wherein the channel forming component is a laser.

17. The method of claim 15, wherein the channel forming component is a blade.

18. The method of claim 15, wherein the pressure applying component is compressed air.

19. The method of claim 15, further comprising coupling the semiconductor wafer to a wafer fixing component.

20. The method of claim 15, wherein the non-contact pressure is a first non-contact pressure and the pressure applying component is a first pressure applying component, and wherein the method further comprises applying a second non-contact pressure using a second pressure applying component, wherein the first non-contact pressure and the second non-contact pressure are applied simultaneously to the semiconductor wafer.

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