Adapter plate, preparation method thereof and packaging structure

Abstract

The invention provides an adapter plate, a preparation method thereof and a packaging structure. The adapter plate comprises a substrate; the first surface and the second surface are oppositely arranged; the protective film is located on the first surface, the protective film comprises at least one first through hole, and the first through hole penetrates through the protective film and the substrate; the first through hole is at least partially filled with the conductive column; the first wiring layer is located on the side, away from the substrate, of the protective film; the at least one second wiring layer is located on the second surface; the first wiring layer and the second wiring layer are electrically connected through the conductive columns. According to the technical scheme, the quality of the adapter plate can be improved, and the preparation difficulty is reduced.

Description

Technical Field

[0001] This application relates to the field of packaging technology, specifically to an adapter board and its preparation method and packaging structure. Background Technology

[0002] With the booming development of emerging fields such as smartphones, wearable devices, automotive electronics, and artificial intelligence, integrated circuits are developing towards diversified applications, and 3D packaging technology is gradually becoming an important means to achieve miniaturization, lightweighting, and multifunctionality of electronic products.

[0003] Glass interposer interconnect technology has advantages such as excellent high-frequency electrical characteristics, low cost, simple process flow and strong mechanical stability. It has broad application prospects in radio frequency devices, micro-motor system packaging, optoelectronic system integration and other fields. However, the preparation of glass interposers still faces technical challenges. Summary of the Invention

[0004] To address the aforementioned issues, embodiments of this application provide an adapter board, its preparation method, and its packaging structure.

[0005] In a first aspect, embodiments of this application provide an adapter board, comprising: a substrate having a first surface and a second surface disposed opposite to each other; a protective film located on the first surface, the protective film including at least one first through hole penetrating the protective film and the substrate; at least one conductive post, the conductive post at least partially filling the first through hole; at least one first wiring layer located on the side of the protective film away from the substrate; and at least one second wiring layer located on the second surface; wherein the first wiring layer and the second wiring layer are electrically connected through the conductive post.

[0006] In conjunction with the first aspect, the protective film includes a first film layer, the first film layer having a reflectivity of greater than or equal to 80% in the visible light band and near-infrared light band; preferably, the material of the first film layer includes silver or aluminum; preferably, the thickness of the first film layer is in the range of 20~500 nm.

[0007] In conjunction with the first aspect, the protective film comprises multiple film layers, with adjacent film layers having different refractive indices; preferably, the protective film comprises at least one second film layer and at least one third film layer, the second film layer and the third film layer being alternately stacked along the direction away from the substrate; preferably, the refractive index of the second film layer is less than the refractive index of the third film layer; preferably, the refractive index of the second film layer is in the range of 1.0 to 1.6, and / or, the refractive index of the third film layer is in the range of 2.0 to 3.0; preferably, the material of the second film layer comprises at least one selected from silicon dioxide, aluminum oxide, boron nitride, silicon oxynitride, yttrium fluoride, and a mixture of barium fluoride and ytterbium fluoride; and / or, the material of the third film layer comprises at least one selected from titanium dioxide, zinc sulfide, zirconium dioxide, titanium nitride, silicon carbide, and zinc selenide; preferably, the number of layers of the second film layer is greater than or equal to 3; and / or, the number of layers of the third film layer is greater than or equal to 3; preferably, the number of layers of the second film layer is equal to the number of layers of the third film layer; preferably, the thickness of the second film layer is in the range of 50 to 300 mm. nm; the thickness of the third film ranges from 50 to 300 nm.

[0008] In conjunction with the first aspect, the number of first wiring layers includes multiple layers, and the adapter board further includes: at least one first dielectric layer disposed between adjacent first wiring layers; a first interconnect structure located within the first dielectric layer, the first interconnect structure connecting adjacent first wiring layers; and / or; the number of second wiring layers includes multiple layers, and the adapter board further includes: at least one second dielectric layer disposed between adjacent second wiring layers; a second interconnect structure located within the second dielectric layer, the second interconnect structure connecting adjacent second wiring layers; preferably, the material of the first interconnect structure includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the first wiring layer The material includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the second interconnect structure includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the second wiring layer includes at least one of copper, aluminum, titanium, nickel, gold, and silver; preferably, the material of the first interconnect structure is the same as that of the first wiring layer; and / or, the material of the second interconnect structure is the same as that of the second wiring layer; preferably, the materials of the first wiring layer and the second wiring layer are the same; preferably, the conductive pillar is the same as the material of the first wiring layer or the second wiring layer; preferably, the thickness of the first wiring layer in the direction perpendicular to the substrate ranges from 1 to 30 mm. µm; and / or, the thickness of the second wiring layer ranges from 1 to 30 µm; preferably, along the direction perpendicular to the substrate, the thickness of the first dielectric layer ranges from 1 to 40 µm; and / or, the thickness of the second dielectric layer ranges from 1 to 40 µm; preferably, the material of the first dielectric layer includes at least one of Ajinomoto multilayer dielectric film, photosensitive polyimide, polyimide, and epoxy resin; and / or, the material of the second dielectric layer includes at least one of Ajinomoto multilayer dielectric film, photosensitive polyimide, polyimide, and epoxy resin; preferably, the substrate includes at least one of a glass substrate, a silicon substrate, a ceramic substrate, or a polymer substrate; preferably, the thickness of the substrate ranges from 0.0.05~10 mm; preferably, the first through hole includes a cylindrical hole; preferably, the diameter of the first through hole ranges from 5 to 200 mm. µm; preferably, the adapter plate further includes a first protective layer disposed on the side of the first wiring layer facing away from the substrate; and / or, the adapter plate further includes a second protective layer disposed on the side of the second wiring layer facing away from the substrate; preferably, the first protective layer is provided with a second through-hole, the orthographic projection of the second through-hole on the substrate at least partially overlapping the orthographic projection of the first wiring layer farthest from the substrate in the direction perpendicular to the substrate on the substrate; and / or, the second protective layer is provided with a third through-hole, the orthographic projection of the third through-hole on the substrate at least partially overlapping the orthographic projection of the second wiring layer farthest from the substrate in the direction perpendicular to the substrate on the substrate; preferably, the material of the first protective layer includes at least one of ink, polyimide, photosensitive polyimide, and Ajinomoto multilayer dielectric film; and / or, the material of the second protective layer includes at least one of ink, polyimide, photosensitive polyimide, and Ajinomoto multilayer dielectric film; preferably, the thickness of the first protective layer in the direction perpendicular to the substrate is in the range of 20~100 µm; and / or, the thickness of the second protective layer in the direction perpendicular to the substrate is in the range of 20~100 µm. µm.

[0009] Secondly, embodiments of this application provide a method for preparing an adapter board, comprising: providing a substrate; preparing a protective film on a first surface of the substrate; preparing a first wiring layer on a side of the protective film opposite to the first surface; etching the substrate and the protective film on a second surface of the substrate to form at least one first through hole penetrating the substrate and the protective film, wherein the second surface and the first surface are disposed opposite to each other; filling the first through hole with conductive pillars; preparing a second wiring layer on the second surface, wherein the first wiring layer and the second wiring layer are electrically connected through the conductive pillars.

[0010] In conjunction with the second aspect, preparing a protective film on the first surface of a substrate includes: preparing a first film layer on the first surface of the substrate to obtain a protective film; preferably, the reflectivity of the first film layer to the visible light band and the near-infrared light band is greater than or equal to 80%; preferably, the material of the first film layer includes silver or aluminum; or, preparing a protective film on the first surface of the substrate includes: alternately preparing a second film layer and a third film layer on the first surface of the substrate to obtain a protective film; preferably, the refractive index of the second film layer is less than the refractive index of the third film layer; preferably, the refractive index of the second film layer is in the range of 1.0 to 1.6, and / or, the refractive index of the third film layer is in the range of 2.0 to 3.0; preferably, the material of the second film layer includes at least one selected from silicon dioxide, aluminum oxide, boron nitride, silicon oxynitride, yttrium fluoride, and a mixture of barium fluoride and ytterbium fluoride; and / or, the material of the third film layer includes at least one selected from titanium dioxide, zinc sulfide, zirconium dioxide, titanium nitride, silicon carbide, and zinc selenide.

[0011] In conjunction with the second aspect, etching is performed on one side of the second surface of the substrate and the protective film to form at least one first through-hole penetrating the substrate and the protective film, comprising: using a laser to induce modification of the substrate on the second surface to obtain at least one modified site; using wet etching to etch the substrate at the modified site to expose part of the protective film; using dry etching to etch the exposed protective film to form at least one first through-hole; preferably, the etching solution for wet etching includes at least one of a mixed acid of hydrofluoric acid and sulfuric acid, a mixed acid of hydrofluoric acid and hydrochloric acid, a mixed acid of hydrofluoric acid and phosphoric acid, sodium hydroxide, or potassium hydroxide; preferably, the material of the protective film includes at least one of titanium nitride, silicon carbide, and zinc selenide; preferably, the etching gas for dry etching includes carbon tetrafluoride or sulfur hexafluoride.

[0012] In conjunction with the second aspect, etching is performed on one side of the second surface of the substrate and the protective film to form at least one first through-hole penetrating the substrate and the protective film, comprising: using a laser to induce modification of the substrate on the second surface to obtain at least one modified site; using wet etching to etch the substrate and the protective film at the modified site to form at least one first through-hole; preferably, the etching solution for wet etching includes at least one of a mixed acid of hydrofluoric acid and sulfuric acid, a mixed acid of hydrofluoric acid and hydrochloric acid, a mixed acid of hydrofluoric acid and phosphoric acid, sodium hydroxide or potassium hydroxide; preferably, the material of the protective film includes at least one of silicon dioxide, titanium dioxide, and zirconium dioxide.

[0013] In conjunction with the second aspect, before etching the substrate and protective film on one side of the second surface of the substrate to form at least one first via through the substrate and protective film, the fabrication method further includes: performing full-surface etching on the second surface using wet etching to thin the substrate; and / or, while etching the substrate and protective film on one side of the second surface of the substrate to form at least one first via through the substrate and protective film, the fabrication method further includes: performing full-surface etching on the second surface using wet etching to thin the substrate; preferably, the number of first wiring layers is multiple, and the fabrication of the first wiring layers on the side of the protective film away from the first surface includes: sequentially and alternately forming the first wiring layers and the first dielectric layer on the side of the protective film away from the first surface; and forming a first wiring layer on the side of the first dielectric layer furthest from the substrate in the direction perpendicular to the substrate away from the substrate, wherein adjacent first wiring layers are connected by a first interconnect structure in the first dielectric layer; and / or, the number of second wiring layers is multiple, and the fabrication of the second surface includes: performing full-surface etching on the second surface using wet etching to thin the substrate; preferably, the number of first wiring layers is multiple, and the fabrication of the first wiring layers on the second surface includes: sequentially and alternately forming the first wiring layers and the first dielectric layer on the side of the protective film away from the first surface; and forming a first wiring layer on the side of the first dielectric layer furthest from the substrate in the direction perpendicular to the substrate, wherein adjacent first wiring layers are connected by a first interconnect structure in the first dielectric layer; and / or, the number of second ... dielectric layer on the second surface includes: sequentially and alternately The second wiring layer includes: sequentially and alternately forming a second wiring layer and a second dielectric layer on a second surface; and forming a second wiring layer on the side of the second dielectric layer furthest from the substrate in the direction perpendicular to the substrate, wherein adjacent second wiring layers are connected by a second interconnect structure in the second dielectric layer; preferably, after the step of forming a first wiring layer on the side of the protective film furthest from the first surface, the fabrication method further includes: forming a first protective layer on the side of the first wiring layer furthest from the substrate, the first protective layer having a second via, the orthographic projection of the second via on the substrate at least partially overlapping the orthographic projection of the first wiring layer furthest from the substrate in the direction perpendicular to the substrate; and / or, after the step of forming a second wiring layer on the second surface, the fabrication method further includes: forming a second protective layer on the side of the second wiring layer furthest from the substrate, the second protective layer having a third via, the orthographic projection of the third via on the substrate at least partially overlapping the orthographic projection of the second wiring layer furthest from the substrate in the direction perpendicular to the substrate.

[0014] Thirdly, embodiments of this application provide a packaging structure, including: the aforementioned adapter board, or an adapter board prepared according to the aforementioned preparation method.

[0015] Through the above technical solutions, the protective film can increase the adhesion between the first wiring layer and the substrate, thereby improving the quality of the adapter board; in addition, during the fabrication of the adapter board, the protective film can protect the first wiring layer from exposure to laser conditions, avoiding damage to the first wiring layer; furthermore, during the fabrication of the adapter board, through-hole filling is transformed into blind-hole filling, reducing the fabrication difficulty. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the cross-sectional structure of an adapter plate provided in one embodiment of this application.

[0017] Figure 2aThis is a structural diagram of the protective film provided in one embodiment of this application.

[0018] Figure 2b This is a structural diagram of the protective film provided in one embodiment of this application.

[0019] Figure 3 This is a schematic diagram of the cross-sectional structure of the adapter plate provided in another embodiment of this application.

[0020] Figure 4 This is a schematic flowchart of a method for preparing an adapter plate according to an embodiment of this application.

[0021] Figures 5a to 5h This is a schematic diagram of the fabrication process of the adapter plate provided in one embodiment of this application. Detailed Implementation

[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0023] The ordinal numbers “first,” “second,” and “third” used in this application are to avoid confusion among the constituent elements, not to limit their order or quantity.

[0024] In semiconductor device packaging, through-silicon vias (TSVs) and through-glass vias (TGVs) play a crucial role in achieving higher-density interconnects, improving performance, and reducing power consumption, making them key technologies for 3D integration. Compared to silicon-based interposers with TSV structures, glass interposers with TGV structures offer advantages such as lower cost, superior electrical performance, and stronger mechanical stability, making them a hot research topic in the industry. However, some challenges remain in the fabrication and use of glass interposers.

[0025] To address the aforementioned technical problems, this application provides an adapter board comprising a substrate, a protective film, at least one conductive post, at least one first wiring layer, and at least one second wiring layer. Specifically, the substrate has a first surface and a second surface disposed opposite to each other; the protective film is located on the first surface and includes at least one first through-hole penetrating both the protective film and the substrate; the conductive post at least partially fills the first through-hole; the first wiring layer is located on the side of the protective film facing away from the substrate, and the second wiring layer is located on the second surface, wherein the first wiring layer and the second wiring layer are electrically connected through the conductive post. In this application embodiment, the protective film can increase the adhesion between the first wiring layer and the substrate, thereby improving the quality of the adapter board; furthermore, during the fabrication of the adapter board, the protective film can protect the first wiring layer from exposure to laser conditions, preventing damage to the first wiring layer; furthermore, during the fabrication of the adapter board, through-hole filling is transformed into blind via filling, reducing the fabrication difficulty.

[0026] Figure 1 This is a schematic cross-sectional view of an adapter plate provided in one embodiment of this application. Figure 1 As shown, the adapter board includes a substrate 10, a protective film 20, at least one conductive post 110, a first wiring layer 310, and a second wiring layer 410.

[0027] In this embodiment, the substrate 10 includes at least one of a glass substrate, a silicon substrate, a ceramic substrate, or a polymer substrate. Preferably, the substrate 10 includes a glass substrate. Specifically, the substrate 10 includes at least one of borosilicate glass, aluminoborosilicate glass, quartz glass, alkali-free glass, or alkaline glass.

[0028] In this embodiment, the substrate 10 has a first surface and a second surface disposed opposite to each other. Optionally, the thickness of the substrate 10 ranges from 0.05 to 10 mm. Exemplarily, the thickness of the substrate 10 is 0.05 mm, 0.1 mm, 0.5 mm, 1 mm, 3 mm, 5 mm, 7 mm, 9 mm, or 10 mm.

[0029] In this embodiment, the protective film 20 is located on the first surface and includes at least one first through-hole 201, which penetrates the protective film 20 and the substrate 10. Optionally, the first through-hole 201 is a cylindrical hole. Optionally, the aperture of the first through-hole 201 ranges from 5 to 200 µm. Exemplarily, the aperture of the first through-hole 201 is 5 µm, 10 µm, 20 µm, 50 µm, 70 µm, 90 µm, 100 µm, 120 µm, 140 µm, 160 µm, 180 µm, or 200 µm.

[0030] Optionally, such as Figure 2aAs shown, the protective film 20 includes a first film layer 211, which has a reflectivity of greater than or equal to 80% for the visible and near-infrared light bands. For example, the reflectivity of the first film layer 211 for the visible and near-infrared light bands is 80%, 82%, 85%, 90%, 95%, and 99%, respectively. Under this reflectivity condition, the first film layer 211 can effectively reflect laser light, blocking most of the laser light from passing through it during the fabrication of the adapter plate, thereby preventing laser damage to the first wiring layer 310. Optionally, the material of the first film layer 211 includes silver or aluminum. Optionally, the thickness of the first film layer 211 ranges from 20 to 500 nm. For example, the thickness of the first film layer 211 is 20 mm, 40 nm, 60 nm, 80 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, and 400 nm.

[0031] In some embodiments, the protective film 20 includes multiple film layers with adjacent film layers having different refractive indices. Exemplarily, the protective film 20 includes at least one second film layer 212 and at least one third film layer 213, with the second film layer 212 and the third film layer 213 alternately stacked along a direction away from the substrate 10. In embodiments of this application, the number of layers in the second film layer 212 is greater than or equal to 3; and / or, the number of layers in the third film layer 213 is greater than or equal to 3. Optionally, the number of layers in the second film layer 212 is the same as the number of layers in the third film layer 213. For example, in... Figure 2b In the middle, the protective film 20 includes three second film layers 212 and three third film layers 213, the second film layers 212 and the third film layers 213 being along the direction away from the substrate 10 ( Figure 2bThe layers are alternately stacked (in the x-direction). Optionally, the refractive index of the second layer 212 is less than that of the third layer 213. This allows for the formation of a multilayer interference structure or a Bragg mirror structure. Optionally, the second layer 212 comprises a low-reflectivity material, and the third layer 213 comprises a high-reflectivity material. Optionally, the refractive index of the second layer 212 ranges from 1.0 to 1.6. For example, the refractive index range of the second layer 212 is 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, or 1.6. Optionally, the refractive index range of the third layer 213 is 2.0 to 3.0. For example, the refractive index range of the third layer 213 is 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, or 3.0. Optionally, the material of the second film layer 212 includes at least one selected from silicon dioxide, aluminum oxide, boron nitride, silicon oxynitride, yttrium fluoride, and a mixture of barium fluoride and ytterbium fluoride. The material of the third film layer 213 includes at least one selected from titanium dioxide, zinc sulfide, zirconium dioxide, titanium nitride, silicon carbide, and zinc selenide. In this embodiment, the thickness of the second film layer 212 ranges from 50 to 300 nm, and / or the thickness of the third film layer 213 ranges from 50 nm to 300 nm. Exemplarily, the thickness of the second film layer 212 is 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, or 300 nm. The thickness of the third film layer 213 is 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, or 300 nm. It should be noted that when fabricating the adapter plate, the thicknesses of the second film layer 212 and the third film layer 213 satisfy the following relationship: At that time, the blocking effect is optimal. Among them, The refractive index of the second film layer 212 is... The thickness of the second film layer 212, The refractive index of the third film layer 213 is... λ represents the thickness of the third film layer 213, and λ represents the wavelength of the laser used.

[0032] Continue to refer to Figure 1 The conductive post 110 at least partially fills the first through hole 201. Optionally, the conductive post 110 completely fills the first through hole 201. Optionally, the material of the conductive post 110 includes at least one selected from copper, aluminum, titanium, nickel, gold, and silver, preferably copper.

[0033] Optionally, the first wiring layer 310 is located on the side of the protective film 20 facing away from the substrate 10, and the second wiring layer 410 is located on the second surface. The first wiring layer 310 and the second wiring layer 410 are electrically connected via conductive pillars 110. Optionally, the thickness of the first wiring layer 310 along the direction perpendicular to the substrate 10 ranges from 1 to 30 µm, for example, 1 µm, 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, or 30 µm. The thickness of the second wiring layer 410 along the direction perpendicular to the substrate 10 also ranges from 1 to 30 µm, for example, 1 µm, 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, or 30 µm. Optionally, the material of the first wiring layer 310 includes at least one of copper, aluminum, titanium, nickel, gold, and silver. The material of the second wiring layer 410 includes at least one of copper, aluminum, titanium, nickel, gold, and silver. In some embodiments, the materials of the first wiring layer 310 and the second wiring layer are the same. In some embodiments, the conductive post 110 is made of the same material as the first wiring layer 310 or the second wiring layer 410.

[0034] Optionally, the adapter board further includes a first protective layer 340 and a second protective layer 440. The first protective layer 340 is disposed on the side of the first wiring layer 310 facing away from the substrate 10, and the second protective layer 440 is disposed on the side of the second wiring layer 410 facing away from the substrate 10. The first protective layer 340 is provided with a second through-hole 341, the orthographic projection of the second through-hole 341 on the substrate 10 at least partially overlapping the orthographic projection of the first wiring layer 310 on the substrate 10. The portion of the first wiring layer 310 exposed to the second through-hole 341 is used to connect solder balls ( Figure 1 (Solder balls are not shown). The second protective layer 440 is provided with a third through-hole 441, the orthographic projection of the third through-hole 441 on the substrate 10 at least partially overlapping the orthographic projection of the second wiring layer 410 on the substrate 10. The portion of the second wiring layer 410 exposed to the third through-hole 441 is used to connect solder balls. Figure 1(Solder balls are not shown). Optionally, the material of the first protective layer 340 includes at least one of ink, polyimide (PI), photosensitive polyimide (PSPI), and Ajinomoto build-up film (ABF). The material of the second protective layer 440 includes at least one of ink, polyimide, photosensitive polyimide, and Ajinomoto build-up film. Along the direction perpendicular to the substrate 10, the thickness of the first protective layer 340 ranges from 20 to 100 µm, for example, 20 µm, 40 µm, 50 µm, 60 µm, 80 µm, and 100 µm. Along the direction perpendicular to the substrate 10, the thickness of the second protective layer 440 ranges from 20 to 100 µm, for example, 20 µm, 40 µm, 50 µm, 60 µm, 80 µm, and 100 µm. By setting a first protective layer 340 and a second protective layer 440, damage to the first wiring layer 310 and the second wiring layer 410 can be avoided.

[0035] In this embodiment, the protective film 20 can increase the adhesion between the first wiring layer 310 and the substrate 10 to improve the quality of the adapter board. In addition, when preparing the adapter board, the protective film 20 can protect the first wiring layer 310 from exposure to laser conditions and avoid damage to the first wiring layer 310. Furthermore, when preparing the adapter board, the through-hole filling is changed to blind hole filling, which reduces the difficulty of preparation.

[0036] In some embodiments, there are multiple first wiring layers 310, and the adapter board further includes at least one first dielectric layer 330 and a first interconnect structure 320. The first dielectric layer 330 is disposed between adjacent first wiring layers 310, and the first interconnect structure 320 is located within the first dielectric layer 330, connecting two adjacent first wiring layers 310. There are multiple second wiring layers 410, and the adapter board further includes at least one second dielectric layer 430 and a second interconnect structure 420. The second dielectric layer 430 is disposed between adjacent first wiring layers 310, and the second interconnect structure 420 connects two adjacent second wiring layers 410.

[0037] For example, Figure 3 This is a schematic cross-sectional view of the adapter plate provided in another embodiment of this application. It can be understood that... Figure 3 As is only one specific embodiment, the adapter board may also have other numbers of first wiring layers 310 and second wiring layers 410. Figure 3 The adapter plate shown is Figure 1The difference in the adapter board shown is that it includes three first wiring layers 310, two first dielectric layers 330, and two first interconnect structures 320. The first dielectric layers 330 are disposed between adjacent first wiring layers 310, and the first interconnect structures 320 are located within the first dielectric layers 330, connecting two adjacent first wiring layers 310. The adapter board also includes three second wiring layers 410, two second dielectric layers 430, and two second interconnect structures 420. The second dielectric layers 430 are disposed between adjacent second wiring layers 410, and the second interconnect structures 420 are located within the second dielectric layers 430, connecting two adjacent second wiring layers 410.

[0038] Optionally, the material of the first interconnect structure 320 includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the first wiring layer 310 includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the second interconnect structure 420 includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the second wiring layer 410 includes at least one of copper, aluminum, titanium, nickel, gold, and silver.

[0039] Optionally, the first interconnect structure 320 is made of the same material as the first wiring layer 310. The first interconnect structure 320 may be fabricated in the same step as one of the two first wiring layers 310 connected to the first interconnect structure 320. For example, the first interconnect structure 320 may be fabricated in the same step as the first wiring layer 310 away from the substrate 10 among the two first wiring layers 310 connected to the first interconnect structure 320. Optionally, the second interconnect structure 420 is made of the same material as the second wiring layer 410. The second interconnect structure 420 may be fabricated in the same step as one of the two second wiring layers 410 connected to the second interconnect structure 420. For example, the second interconnect structure 420 may be fabricated in the same step as the second wiring layer 410 away from the substrate 10 among the two second wiring layers 410 connected to the second interconnect structure 420.

[0040] Optionally, the thickness of the first wiring layer 310 along the direction perpendicular to the substrate 10 ranges from 1 to 30 µm, for example, 1 µm, 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, or 30 µm. Optionally, the thickness of the second wiring layer 410 along the direction perpendicular to the substrate 10 ranges from 1 to 30 µm, for example, 1 µm, 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, or 30 µm. Optionally, the thickness of the first dielectric layer 330 along the direction perpendicular to the substrate 10 ranges from 1 to 40 µm, for example, 1 µm, 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, 30 µm, 35 µm, or 40 µm. Optionally, the thickness of the second dielectric layer 430 along the direction perpendicular to the substrate 10 ranges from 1 to 40 µm, for example, 1 µm, 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, 30 µm, 35 µm, 40 µm.

[0041] Optionally, the material of the first dielectric layer 330 includes at least one of Ajinomoto laminated dielectric film, photosensitive polyimide, polyimide, and epoxy resin; and / or, the material of the second dielectric layer 430 includes at least one of Ajinomoto laminated dielectric film, photosensitive polyimide, polyimide, and epoxy resin.

[0042] In this embodiment, a first protective layer 340 is disposed on the side of the first wiring layer 310 facing away from the substrate 10. The first protective layer 340 has a second via 341, the orthographic projection of the second via 341 onto the substrate 10 at least partially overlapping the orthographic projection of the first wiring layer 310 furthest from the substrate 10 in a direction perpendicular to the substrate 10. The portion of the first wiring layer 310 furthest from the substrate 10 in a direction perpendicular to the substrate 10 exposed to the second via 341 is connected to solder balls. Figure 3 (Solder balls are not shown). A second protective layer 440 is disposed on the side of the second wiring layer 410 facing away from the substrate 10. The second protective layer 440 has a third through-hole 441, the orthographic projection of the third through-hole 441 onto the substrate 10 at least partially overlapping the orthographic projection of the second wiring layer 410 furthest from the substrate 10 in a direction perpendicular to the substrate 10. The portion of the second wiring layer 410 furthest from the substrate 10 in a direction perpendicular to the substrate 10 exposed to the third through-hole 441 is connected to solder balls. Figure 3 (The solder ball is not shown in the image).

[0043] Optionally, the material of the first protective layer 340 includes at least one selected from ink, polyimide, photosensitive polyimide, and Ajinomoto multilayer dielectric film. Optionally, the material of the second protective layer 440 includes at least one selected from ink, polyimide, photosensitive polyimide, and Ajinomoto multilayer dielectric film. Optionally, the material of the first protective layer 340 is the same as the material of the first dielectric layer 330. The material of the second protective layer 440 is the same as the material of the second dielectric layer 430. Optionally, along the direction perpendicular to the substrate 10, the thickness of the first protective layer 340 ranges from 20 to 100 µm, for example, 20 µm, 40 µm, 50 µm, 60 µm, 80 µm, and 100 µm. Along the direction perpendicular to the substrate 10, the thickness of the second protective layer 440 ranges from 20 to 100 µm, for example, 20 µm, 40 µm, 50 µm, 60 µm, 80 µm, and 100 µm.

[0044] This application also provides a method for fabricating an adapter plate, comprising: providing a substrate; fabricating a protective film on a first surface of the substrate; fabricating a first wiring layer on the side of the protective film facing away from the first surface; etching the substrate and the protective film on a second surface of the substrate to form at least one first through-hole penetrating the substrate and the protective film, wherein the second surface and the first surface are disposed opposite to each other; filling the first through-hole with conductive pillars; and fabricating a second wiring layer on the second surface, wherein the first wiring layer and the second wiring layer are electrically connected through the conductive pillars. In this application embodiment, the first wiring layer is first fabricated on the first surface, and then the through-hole is formed on the second surface using laser induction and wet etching. At this time, since the first wiring layer has already been fabricated, filling the through-hole is equivalent to filling a blind hole, which can reduce the difficulty of filling the electroplating material and has better filling quality compared to a through-hole. This is because one end of a blind via is closed, allowing the plating solution to enter through a single opening. This allows the plating metal to deposit stably upwards from the bottom of the via until it fills the entire via. In a through-hole, however, the plating metal can grow not only from the sides of the via wall towards the center but also from both ends towards the center. This multi-directional growth pattern can easily cause the electrolyte to be trapped in the center of the via due to the mismatch in growth rates, forming closed voids and incomplete filling. In this embodiment, by setting a protective film, the first wiring layer is not damaged during laser induction, and the protective film can increase the adhesion between the first wiring layer (metal) and the substrate (glass), improving the quality of the adapter board. Furthermore, when preparing the first wiring layer, a thicker substrate (e.g., glass) can be used to reduce substrate warping. A relatively flat substrate is beneficial for preparing metal lines with fine linewidths. Subsequently, wet etching can be used to etch the entire surface of the substrate (e.g., glass) to thin the substrate. Compared to chemical mechanical polishing, wet etching is less likely to cause substrate cracking.

[0045] Figure 4This is a schematic flowchart of a method for preparing an adapter plate according to an embodiment of this application. Figures 5a to 5h This is a schematic diagram illustrating the fabrication process of an adapter plate provided in one embodiment of this application. For example... Figure 4 As shown, the method includes the following steps.

[0046] Step S410: Provide a substrate.

[0047] Step S420: Prepare a protective film on the first surface of the substrate.

[0048] In this embodiment of the application, preparing a protective film on a first surface of a substrate includes: preparing a first film layer on the first surface of the substrate to obtain a protective film. For example... Figure 2a As shown, the protective film 20 includes a first film layer 211, which is a single film layer. Optionally, the first film layer 211 has a reflectivity of greater than or equal to 80% for the visible light and near-infrared light bands. Optionally, the material of the first film layer 211 includes silver or aluminum.

[0049] Optionally, forming a protective film on the first surface of the substrate includes: alternately forming a second film layer and a third film layer on the first surface of the substrate to obtain a protective film. For example, as shown... Figure 2b As shown, the protective film 20 includes three second film layers 212 and three third film layers 213, with the second film layers 212 and the third film layers 213 arranged along a direction away from the substrate 10. Figure 2b The layers are alternately stacked (in the x-direction). Optionally, the refractive index of the second film layer 212 is less than that of the third film layer 213. Optionally, the refractive index of the second film layer 212 is in the range of 1.0 to 1.6; and / or, the refractive index of the third film layer 213 is in the range of 2.0 to 3.0. Optionally, the material of the second film layer 212 includes at least one selected from silicon dioxide, aluminum oxide, boron nitride, silicon oxynitride, yttrium fluoride, and a mixture of barium fluoride and ytterbium fluoride. The material of the third film layer 213 includes at least one selected from titanium dioxide, zinc sulfide, zirconium dioxide, titanium nitride, silicon carbide, and zinc selenide.

[0050] Step S430: Prepare a first wiring layer on the side of the protective film away from the first surface.

[0051] Optionally, the number of first wiring layers is one, and the first wiring layer is directly formed on the side of the protective film away from the first surface. Optionally, the number of first wiring layers is multiple, and the formation of the first wiring layers on the side of the protective film away from the first surface includes: sequentially and alternately forming first wiring layers and first dielectric layers on the side of the protective film away from the first surface; and forming a first wiring layer on the side of the first dielectric layer that is furthest from the substrate in the direction perpendicular to the substrate, away from the substrate. Adjacent first wiring layers are connected through a first interconnect structure in the first dielectric layer.

[0052] Optionally, the method includes: fabricating a first via in a first dielectric layer; forming a first metal layer on the surface of the first via and the first dielectric layer facing away from the substrate; and patterning the first metal layer to obtain a first interconnect structure and a next first wiring layer. That is, in this embodiment, the first interconnect structure and one of the adjacent first wiring layers are fabricated simultaneously, thus simplifying the fabrication process. Optionally, the first interconnect structure and the first wiring layer are fabricated by an electroplating process. Optionally, the first dielectric layer is fabricated by at least one of the following processes: coating, magnetron sputtering, chemical vapor deposition, and lamination.

[0053] like Figure 5a As shown, the adapter board includes a first wiring layer 310. Figure 5b As shown, the adapter board includes three first wiring layers 310, a first dielectric layer 330 disposed between adjacent first wiring layers 310, and a first interconnect structure 320 disposed within the first dielectric layer 330. The first interconnect structure 320 electrically connects two adjacent first wiring layers 310.

[0054] Optionally, after fabricating at least one first wiring layer, the fabrication method further includes: forming a first protective layer 340 on the side of the first wiring layer 310 facing away from the substrate 10, such as... Figure 5c As shown in Figure 5d, the first protective layer 340 is provided with a second through hole 341, and the orthographic projection of the second through hole 341 on the substrate 10 at least partially overlaps with the orthographic projection of the first wiring layer 310, which is furthest from the substrate 10 in the direction perpendicular to the substrate 10.

[0055] Step S440: Etch the substrate and the protective film on the second surface of the substrate to form at least one first through hole penetrating the substrate and the protective film.

[0056] The second surface and the first surface are disposed opposite each other. In some embodiments, if the material of the protective film 20 is not easily etched by wet etching, it is necessary to first open a hole in the substrate and then form the first through-hole by a dry etching process. Specifically, with Figure 5c Taking the structure shown as an example, laser is used to induce modification of the substrate on the second surface to obtain at least one modified site A, such as... Figure 5e As shown. It should be noted that the modified location A is the position on the substrate irradiated by the laser, specifically a line along the thickness direction of the substrate 10. Then, wet etching is used to etch the substrate at the modified location A to expose part of the protective film 20, as shown. Figure 5f As shown; dry etching is used to etch the exposed protective film 20 to form at least one first via 201, as shown. Figure 5gAs shown. In this embodiment, the etching solution for wet etching includes at least one of the following: a mixed acid of hydrofluoric acid and sulfuric acid, a mixed acid of hydrofluoric acid and hydrochloric acid, a mixed acid of hydrofluoric acid and phosphoric acid, sodium hydroxide, or potassium hydroxide. Optionally, the material of the protective film 20 includes at least one of titanium nitride, silicon carbide, and zinc selenide. Optionally, the etching gas for dry etching includes carbon tetrafluoride or carbon hexafluoride.

[0057] Optionally, when the material of the protective film 20 is easily etched by wet etching, wet etching can be used to obtain the first through-hole 201. Specifically, laser-induced modification of the substrate is performed on the second surface to obtain at least one modified site A, such as... Figure 5e As shown; wet etching is used to etch the substrate 10 and protective film 20 at the modified location A to form at least one first through-hole 201, as shown. Figure 5g As shown. Optionally, the etching solution for wet etching includes at least one of a mixed acid of hydrofluoric acid and sulfuric acid, a mixed acid of hydrofluoric acid and hydrochloric acid, a mixed acid of hydrofluoric acid and phosphoric acid, sodium hydroxide, or potassium hydroxide. Optionally, the material of the protective film includes at least one of silicon dioxide, titanium dioxide, and zirconium dioxide.

[0058] Optionally, before etching the substrate and protective film on one side of the second surface of the substrate to form at least one first through-hole penetrating the substrate and protective film, the fabrication step further includes: performing full-surface etching on the second surface using wet etching to thin the substrate. That is, when fabricating the first wiring layer, a thicker substrate is selected, which can reduce substrate warping. A flatter substrate is beneficial for fabricating metal lines with fine linewidths. After fabricating the first wiring layer, the substrate is thinned using wet etching to obtain the required substrate thickness. Wet etching thinning can avoid damaging the substrate.

[0059] Since the first via is formed by laser-induced and wet etching processes, the etching solution can also thin the substrate during this process. Specifically, while etching the substrate and the protective film on one side of the second surface of the substrate to form at least one first via through the substrate and the protective film, the preparation step also includes: using wet etching to etch the entire second surface to thin the substrate.

[0060] Step S450: Fill the first through hole with a conductive post.

[0061] After the first through hole 201 is prepared, a conductive pillar 110 is filled into the first through hole 201, such as... Figure 5hAs shown. Optionally, the conductive pillar 110 is prepared by electroplating. Specifically, a seed layer is prepared on the sidewalls and bottom wall of the first via 201, as well as on the second surface. Methods for preparing the seed layer include, but are not limited to, physical vapor deposition, evaporation, and electroless plating. Optionally, the seed layer comprises a copper layer or a titanium-copper composite layer, preferably a titanium-copper composite layer. After preparing the seed layer, photoresist is coated on the side of the seed layer facing away from the substrate, and then exposed and developed to generate patterned photoresist. Then, a metal layer is formed on the uncoated seed layer using electroplating; the photoresist is removed, and the remaining seed layer is etched to obtain the conductive pillar. It is understood that in some cases, the conductive pillar and the first and second wiring layers can be prepared simultaneously, thus simplifying the fabrication process.

[0062] Step S460: Prepare a second wiring layer on the second surface.

[0063] In this embodiment, the first wiring layer and the second wiring layer are electrically connected by conductive pillars. Optionally, if the fabrication is as follows... Figure 1 The adapter board shown is manufactured by a method comprising forming a second wiring layer on a second surface.

[0064] Optionally, the number of second wiring layers can be multiple, for example, such as Figure 3 As shown, the fabrication method includes: sequentially and alternately forming a second wiring layer and a second dielectric layer on a second surface; and forming a second wiring layer on the side of the second dielectric layer furthest from the substrate in the direction perpendicular to the substrate, wherein adjacent second wiring layers are connected by a second interconnect structure in the second dielectric layer.

[0065] Optionally, the method includes: fabricating a second via in a second dielectric layer; forming a second metal layer on the surface of the second via and the second dielectric layer facing away from the substrate; and patterning the second metal layer to obtain a second interconnect structure and a next second wiring layer. In this embodiment, the second interconnect structure and the adjacent second wiring layer are fabricated simultaneously, which simplifies the fabrication process. Optionally, the second interconnect structure and the second wiring layer are fabricated by an electroplating process. Optionally, the second dielectric layer is fabricated by at least one of the following processes: coating, magnetron sputtering, chemical vapor deposition, and lamination.

[0066] like Figure 1 As shown, the adapter board includes a second wiring layer. Figure 3 As shown, the adapter board includes three second wiring layers.

[0067] Optionally, after fabricating at least one second wiring layer, the fabrication method further includes: forming a second protective layer on the side of the second wiring layer facing away from the substrate; the second protective layer having a third via; the orthographic projection of the third via on the substrate at least partially overlapping the orthographic projection of the second wiring layer furthest from the substrate in the direction perpendicular to the substrate, thus obtaining... Figure 1 The adapter board shown, or as... Figure 3 The adapter plate shown.

[0068] This application provides a packaging structure, which includes the above-described adapter board, or an adapter board prepared according to the above-described preparation method.

[0069] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0070] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0071] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0072] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0073] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

[0074] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An adapter board, characterized in that, include: The substrate has a first surface and a second surface disposed opposite to each other; A protective film is located on the first surface, the protective film including at least one first through hole, the first through hole penetrating the protective film and the substrate; At least one conductive post, the conductive post at least partially filling the first through-hole; At least one first wiring layer is located on the side of the protective film opposite to the substrate; At least one second wiring layer is located on the second surface; The first wiring layer and the second wiring layer are electrically connected through the conductive pillars.

2. The adapter board according to claim 1, characterized in that, The protective film includes a first film layer, wherein the first film layer has a reflectivity of greater than or equal to 80% for the visible light band and the near-infrared light band; Preferably, the material of the first film layer includes silver or aluminum; Preferably, the thickness of the first film layer is in the range of 20~500 nm.

3. The adapter board according to claim 1, characterized in that, The protective film comprises multiple film layers, and adjacent film layers have different refractive indices; Preferably, the protective film includes at least one second film layer and at least one third film layer, wherein the second film layer and the third film layer are alternately stacked in a direction away from the substrate; Preferably, the refractive index of the second film layer is less than the refractive index of the third film layer; Preferably, the refractive index of the second film layer is in the range of 1.0 to 1.6, and / or the refractive index of the third film layer is in the range of 2.0 to 3.0; Preferably, the material of the second film layer includes at least one of silicon dioxide, aluminum oxide, boron nitride, silicon oxynitride, yttrium fluoride, and a mixture of barium fluoride and ytterbium fluoride; and / or, the material of the third film layer includes at least one of titanium dioxide, zinc sulfide, zirconium dioxide, titanium nitride, silicon carbide, and zinc selenide. Preferably, the second film layer has 3 or more layers; and / or, the third film layer has 3 or more layers; Preferably, the number of layers in the second film layer is equal to the number of layers in the third film layer; Preferably, the thickness of the second film layer is in the range of 50~300 nm; the thickness of the third film layer is in the range of 50~300 nm.

4. The adapter plate according to any one of claims 1 to 3, characterized in that, The number of first wiring layers includes multiple layers, and the adapter board further includes: at least one first dielectric layer disposed between adjacent first wiring layers; a first interconnect structure located within the first dielectric layer, the first interconnect structure connecting adjacent first wiring layers; and / or; the number of second wiring layers includes multiple layers, and the adapter board further includes: at least one second dielectric layer disposed between adjacent second wiring layers; a second interconnect structure located within the second dielectric layer, the second interconnect structure connecting adjacent second wiring layers; Preferably, the material of the first interconnect structure includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the first wiring layer includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the second interconnect structure includes at least one of copper, aluminum, titanium, nickel, gold, and silver; and / or, the material of the second wiring layer includes at least one of copper, aluminum, titanium, nickel, gold, and silver. Preferably, the first interconnect structure is made of the same material as the first wiring layer; and / or, the second interconnect structure is made of the same material as the second wiring layer; Preferably, the first wiring layer and the second wiring layer are made of the same material; Preferably, the conductive pillar is made of the same material as the first wiring layer or the second wiring layer; Preferably, the thickness of the first wiring layer is in the range of 1~30 µm along the direction perpendicular to the substrate; and / or, the thickness of the second wiring layer is in the range of 1~30 µm; Preferably, the thickness of the first dielectric layer is in the range of 1~40 µm along the direction perpendicular to the substrate; and / or, the thickness of the second dielectric layer is in the range of 1~40 µm; Preferably, the material of the first dielectric layer includes at least one of Ajinomoto multilayer dielectric film, photosensitive polyimide, polyimide, and epoxy resin; and / or, the material of the second dielectric layer includes at least one of Ajinomoto multilayer dielectric film, photosensitive polyimide, polyimide, and epoxy resin. Preferably, the substrate comprises at least one of a glass substrate, a silicon substrate, a ceramic substrate, or a polymer substrate; Preferably, the thickness of the substrate is in the range of 0.05~10 mm; Preferably, the first through hole includes a cylindrical hole; Preferably, the diameter of the first through hole is in the range of 5~200 µm; Preferably, the adapter board further includes a first protective layer disposed on the side of the first wiring layer opposite to the substrate; and / or, the adapter board further includes a second protective layer disposed on the side of the second wiring layer opposite to the substrate. Preferably, the first protective layer is provided with a second through hole, the orthographic projection of the second through hole on the substrate at least partially overlaps with the orthographic projection of the first wiring layer farthest from the substrate in the direction perpendicular to the substrate on the substrate; and / or, the second protective layer is provided with a third through hole, the orthographic projection of the third through hole on the substrate at least partially overlaps with the orthographic projection of the second wiring layer farthest from the substrate in the direction perpendicular to the substrate on the substrate. Preferably, the material of the first protective layer includes at least one of ink, polyimide, photosensitive polyimide, and Ajinomoto multilayer dielectric film; and / or, the material of the second protective layer includes at least one of ink, polyimide, photosensitive polyimide, and Ajinomoto multilayer dielectric film. Preferably, the thickness of the first protective layer is in the range of 20 to 100 µm along the direction perpendicular to the substrate; and / or, the thickness of the second protective layer is in the range of 20 to 100 µm along the direction perpendicular to the substrate.

5. A method for preparing an adapter plate, characterized in that, include: Provide substrate; A protective film is prepared on the first surface of the substrate; A first wiring layer is prepared on the side of the protective film opposite to the first surface; The substrate and the protective film are etched on one side of the second surface of the substrate to form at least one first through hole through the substrate and the protective film, wherein the second surface and the first surface are disposed opposite to each other; Fill the first through hole with a conductive pillar; A second wiring layer is prepared on the second surface, and the first wiring layer and the second wiring layer are electrically connected through the conductive pillars.

6. The method for preparing the adapter plate according to claim 5, characterized in that, The step of preparing a protective film on the first surface of a substrate includes: preparing a first film layer on the first surface of the substrate to obtain the protective film; Preferably, the first film layer has a reflectivity of 80% or greater for the visible light and near-infrared light bands; Preferably, the material of the first film layer includes silver or aluminum; Alternatively, the preparation of the protective film on the first surface of the substrate includes: alternately preparing a second film layer and a third film layer on the first surface of the substrate to obtain the protective film; Preferably, the refractive index of the second film layer is less than the refractive index of the third film layer; Preferably, the refractive index of the second film layer is in the range of 1.0 to 1.6, and / or the refractive index of the third film layer is in the range of 2.0 to 3.0; Preferably, the material of the second film layer includes at least one of silicon dioxide, aluminum oxide, boron nitride, silicon oxynitride, yttrium fluoride, and a mixture of barium fluoride and ytterbium fluoride; and / or, the material of the third film layer includes at least one of titanium dioxide, zinc sulfide, zirconium dioxide, titanium nitride, silicon carbide, and zinc selenide.

7. The method for preparing the adapter plate according to claim 5, characterized in that, The etching of the substrate and the protective film on one side of the second surface of the substrate to form at least one first through-hole penetrating the substrate and the protective film includes: The substrate is modified by laser induction on the second surface to obtain at least one modified site; The substrate at the modified location is etched using wet etching to expose part of the protective film; The exposed protective film is etched using dry etching to form the at least one first via. Preferably, the etching solution for wet etching includes at least one of the following: a mixed acid of hydrofluoric acid and sulfuric acid, a mixed acid of hydrofluoric acid and hydrochloric acid, a mixed acid of hydrofluoric acid and phosphoric acid, sodium hydroxide, or potassium hydroxide. Preferably, the material of the protective film includes at least one of titanium nitride, silicon carbide, and zinc selenide; Preferably, the etching gas used in the dry etching process includes carbon tetrafluoride or sulfur hexafluoride.

8. The method for preparing the adapter plate according to claim 5, characterized in that, The etching of the substrate and the protective film on one side of the second surface of the substrate to form at least one first through-hole penetrating the substrate and the protective film includes: The substrate is modified by laser induction on the second surface to obtain at least one modified site; The substrate and the protective film at the modified location are etched using wet etching to form the at least one first through-hole; Preferably, the etching solution for wet etching includes at least one of the following: a mixed acid of hydrofluoric acid and sulfuric acid, a mixed acid of hydrofluoric acid and hydrochloric acid, a mixed acid of hydrofluoric acid and phosphoric acid, sodium hydroxide, or potassium hydroxide. Preferably, the material of the protective film includes at least one of silicon dioxide, titanium dioxide, and zirconium dioxide.

9. The method for preparing the adapter plate according to claim 5, characterized in that, Before etching the substrate and the protective film on one side of the second surface of the substrate to form at least one first through-hole penetrating the substrate and the protective film, the fabrication method further includes: performing full-surface etching on the second surface using wet etching to thin the substrate; and / or, while etching the substrate and the protective film on one side of the second surface of the substrate to form at least one first through-hole penetrating the substrate and the protective film, the fabrication method further includes: performing full-surface etching on the second surface using wet etching to thin the substrate; Preferably, the number of the first wiring layers is multiple, and the fabrication of the first wiring layer on the side of the protective film away from the first surface includes: sequentially and alternately forming the first wiring layer and the first dielectric layer on the side of the protective film away from the first surface; and forming a first wiring layer on the side of the first dielectric layer furthest from the substrate in the direction perpendicular to the substrate, wherein adjacent first wiring layers are connected through a first interconnect structure in the first dielectric layer; and / or, the number of the second wiring layers is multiple, and the fabrication of the second wiring layer on the second surface includes: sequentially and alternately forming the second wiring layer and the second dielectric layer on the second surface; and forming a second wiring layer on the side of the second dielectric layer furthest from the substrate in the direction perpendicular to the substrate, wherein adjacent second wiring layers are connected through a second interconnect structure in the second dielectric layer; Preferably, after the step of preparing the first wiring layer on the side of the protective film away from the first surface, the preparation method further includes: forming a first protective layer on the side of the first wiring layer away from the substrate, the first protective layer having a second through-hole, the orthographic projection of the second through-hole on the substrate at least partially overlapping the orthographic projection of the first wiring layer farthest from the substrate in the direction perpendicular to the substrate on the substrate; and / or, after the step of preparing the second wiring layer on the second surface, the preparation method further includes: forming a second protective layer on the side of the second wiring layer away from the substrate, the second protective layer having a third through-hole, the orthographic projection of the third through-hole on the substrate at least partially overlapping the orthographic projection of the second wiring layer farthest from the substrate in the direction perpendicular to the substrate on the substrate.

10. A packaging structure, characterized in that, include: The adapter plate according to any one of claims 1 to 4, or the adapter plate prepared by the preparation method according to any one of claims 5 to 9.

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