Reverse connection protection circuit packaging structure based on ideal diode control and manufacturing method

Abstract

The invention relates to a reverse connection protection circuit packaging structure based on ideal diode control, and belongs to the technical field of protection circuit packaging, the reverse connection protection circuit packaging structure comprises a circuit substrate and a shell, the circuit substrate is packaged in the shell, and the shell is provided with a shell bonding pad; the circuit substrate is provided with an ideal diode control chip U1, an MOSFET device Q1, a TVS diode D1, a voltage stabilizing diode D2, an input filter capacitor C1, an output suppression capacitor C2, an output filter capacitor C3 and a protection resistor R1. According to the invention, the ideal diode control chip U1, the MOSFET device Q1, the TVS diode D1, the Zener diode D2 and other protection elements are integrated, so that the circuit can be effectively prevented from being damaged by the reverse connection of the power supply. Especially, due to the introduction of the TVS diode D1, rapid clamping can be realized when surge voltage occurs at the input end, the circuit is protected from being impacted, and the reverse connection protection capability of the circuit is remarkably improved.

Description

Technical Field

[0001] This application belongs to the field of protection circuit packaging technology, specifically relating to a reverse connection protection circuit packaging structure and manufacturing method based on ideal diode control. Background Technology

[0002] In the power electronics industry, power diodes are one of the most commonly used electronic components. Their biggest feature is that they can achieve unidirectional conductivity in high-power applications. However, due to the inherent forward voltage drop of more than 0.6V, power diodes consume a lot of power when used in high-power or high-current applications, especially in low-voltage, high-current applications. Therefore, it is necessary to install a large heat sink and heat dissipation system to keep the diode temperature within a limited range, which leads to a significant increase in application costs, limits product design, and is not conducive to the miniaturization of products.

[0003] An ideal diode is a diode whose forward voltage drop approaches 0V. In reality, an ideal diode consists of a controllable N-channel MOSFET and a corresponding driving circuit. Because MOSFETs generally have low on-resistance and the ability to handle large currents, controlling the on / off state of the N-MOSFET achieves its single-phase current conduction diode characteristics. Simultaneously, the low on-resistance causes the forward voltage drop to approach 0V, thus possessing the characteristics of an ideal diode. Based on the small size, low loss, and high reliability of the ideal diode controller, a metal-ceramic reverse polarity protection circuit package structure is developed, resulting in lower thermal resistance and better heat dissipation. The hermetic packaging ensures high reliability, better meeting the trends of miniaturization, lightweighting, integration, and power enhancement in high-precision weapon systems in aerospace, aviation, weaponry, and shipbuilding fields. Summary of the Invention

[0004] To solve the above problems, the technical solution adopted in this application is: A reverse polarity protection circuit package structure based on ideal diode control includes: a circuit board and a housing, wherein the circuit board is packaged inside the housing, and the housing is provided with housing pads. The circuit board is respectively provided with an ideal diode control chip U1, a MOSFET device Q1, a TVS diode D1, a Zener diode D2, an input filter capacitor C1, an output filter capacitor C3, an output suppression capacitor C2, and a protection resistor R1. The ideal diode control chip U1 includes a gate terminal GATE, a source terminal SOURCE, a power input terminal VCC, an output terminal OUT, and a GND terminal. The source terminal SOURCE and the power input terminal VCC of the ideal diode control chip U1 are shorted and connected to the input VIN network. The output terminal OUT of the ideal diode control chip U1 is connected to the output VOUT network. The GND terminal of the ideal diode control chip U1 is connected to the reference ground through the protection resistor R1. The MOSFET device Q1 has a drain D, a source S, a gate G, and an exposed pad EPAD. The source S of the MOSFET device Q1 is connected to the input VIN network, the drain D of the MOSFET device Q1 is connected to the output VOUT network, and the gate G of the MOSFET device Q1 is connected to the gate terminal GATE of the ideal diode control chip U1. One end of TVS diode D1 is connected to the input VIN network, and the other end is connected to the reference ground; The cathode of Zener diode D2 is connected to the gate terminal GATE of the ideal diode control chip U1, and the anode of Zener diode D2 is connected to the input VIN network. The input filter capacitor C1 is connected between the input VIN network and the reference ground; The output suppression capacitor C2 is connected between the output VOUT network and the GND terminal of the ideal diode control chip U1; The output filter capacitor C3 is connected between the output VOUT network and the reference ground.

[0005] Furthermore, the circuit board is a four-layer RF-4 substrate with a thickness of 0.6mm and external dimensions of 0.95mm × 1.4mm. The ideal diode control chip U1, MOSFET device Q1, TVS diode D1, Zener diode D2, input filter capacitor C1, output suppression capacitor C2, output filter capacitor C3, and protection resistor R1 are all mounted on the same side of the circuit board. The metallized pads on the back of the circuit board are electrically connected to the exposed pads EPAD of the MOSFET device Q1 and are used for heat dissipation. The circuit board is soldered onto the outer casing.

[0006] Furthermore, the outer shell is a metal-ceramic shell, which is positioned above the circuit board and hermetically sealed using a parallel seam welding process to form a reverse connection protection module.

[0007] Furthermore, the TVS diode D1 is a bidirectional diode with a breakdown voltage of 24V, used to clamp input surges; the Zener diode D2 is a 12V Zener diode, used to limit the gate and source voltages of the MOSFET device Q1 to within ±12V.

[0008] Furthermore, the input filter capacitor C1 has a capacitance of 0.22μF, the output filter capacitor C3 has a capacitance of 2.2μF, and the output suppression capacitor C2 has a capacitance of 47nF. Together with the protection resistor R1, they form an RC damping network with a time constant of 1μs to suppress gate drive spikes.

[0009] Furthermore, the outer shell is a metal-ceramic shell, and the inner wall of the outer shell is gold-plated, with an airtightness of ≤1×10 after seam welding. -8Pa·m³ / s.

[0010] Furthermore, the outer shell is made of 4J34 ceramic-bonded alloy material.

[0011] Furthermore, the MOSFET device Q1 is an N-type low-impedance power MOSFET.

[0012] This application also provides a method for manufacturing a reverse connection protection circuit package structure based on ideal diode control, comprising the following steps: Step S1, Solder paste printing: Use a precision screen printing machine to print solder paste according to the solder paste stencil; Step S2, Solder Mask Covering Process: The circuit board is a four-layer RF-4 substrate with a thickness of 0.6mm and dimensions of 0.95mm × 1.4mm. Resin is used to plug vias, and lead-free soldering is used for the solder pads. The outer copper layer is one ounce thick, and the inner copper layer is also one ounce thick. The input and output power wiring consists of four large-area copper layers, connected to the upper and lower layers through vias with a diameter of 0.55mm and a hole diameter of 0.4mm. Specifically, the VCC terminal of the ideal diode control chip U1 is connected to the upper and lower layers through 18 vias; the OUT terminal of the ideal diode control chip U1 is connected to the upper and lower layers through 31 vias. Step S3, Component Soldering: Solder the components onto the PCB board and the PCB board onto the casing; Step S4, Cleaning: Remove contaminants from the assembled components; Step S5, Intermediate power test: Test circuit performance; Step S6, Internal Visual Inspection: Inspect the materials, structure and manufacturing process inside the circuit, and detect or remove devices with internal defects before packaging; Step S7, Packaging: In a high-purity nitrogen environment, a parallel seam welding machine is used to fully fuse the base and the cover plate, and through the relative movement of the electrode and the base, a continuous and complete seam weld is generated, so that the product forms an airtight package. Step S8, Laser Marking: Use a high-precision laser marking machine to form markings on the cover plate.

[0013] Furthermore, in step S3, the component soldering and PCB board soldering to the housing are performed simultaneously, using tin-silver-copper soldering.

[0014] Compared with the prior art, the beneficial effects of this application are as follows: 1. This application provides a reverse connection protection circuit package structure based on ideal diode control. By integrating multiple protection components such as the ideal diode control chip U1, MOSFET device Q1, TVS diode D1, and Zener diode D2, this application can effectively prevent damage to the circuit caused by reverse power connection. In particular, the introduction of TVS diode D1 can quickly clamp the circuit when a surge voltage occurs at the input terminal, protecting the circuit from impact and significantly improving the reverse connection protection capability of the circuit.

[0015] 2. This application provides a reverse connection protection circuit package structure based on ideal diode control. The combined use of the ideal diode control chip U1 and the MOSFET device Q1 achieves low on-resistance and high switching speed, effectively reducing circuit power consumption and improving overall electrical efficiency. Furthermore, the RC damping network composed of the output filter capacitor C3 and the protection resistor R1 effectively suppresses gate drive spikes, ensuring stable circuit operation.

[0016] 3. This application provides a reverse polarity protection circuit packaging structure based on ideal diode control. This application uses a metal-ceramic shell and achieves hermetic sealing through parallel seam welding, achieving a hermetic tightness of ≤1×10⁻⁶. -8 Pa·m³ / s significantly improves the reliability of the packaging structure. Gold plating on the inner wall further enhances airtightness and corrosion resistance, ensuring long-term stable operation of the circuit in harsh environments.

[0017] 4. This application provides a reverse connection protection circuit packaging structure based on ideal diode control. Through precise layout design, all components are mounted on the same side of the circuit board, achieving miniaturized packaging with an external size of only 0.95mm × 1.4mm, suitable for space-constrained applications. The manufacturing method employs advanced processes such as solder paste printing, solder resist coverage, and tin-silver-copper soldering, ensuring production efficiency and product quality.

[0018] 5. This application provides a reverse connection protection circuit packaging structure based on ideal diode control. The reverse connection protection circuit packaging structure of this application is not only suitable for power protection in various electronic devices, but can also be extended to fields with high reliability requirements such as new energy vehicles and aerospace, and has broad market application prospects. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the packaging structure of this application; Figure 2 This is a schematic diagram of the lead structure of the circuit board in this application; Figure 3 This is a schematic diagram of the circuit board structure of this application.

[0020] In the diagram: 1. Circuit board, 2. Housing, 3. Housing pads. Detailed Implementation

[0021] The present application will be further described in detail below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present application.

[0022] In the description of this application, it should be understood that the terms "upper", "lower", "vertical", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, rather than indicating a specific orientation or structure, and therefore should not be construed as a limitation of this application.

[0023] In this application, unless otherwise expressly specified and limited, the term "above" or "below" a second feature may include direct contact between the first and second features, or contact between the first and second features not in direct contact but through another feature between them.

[0024] Example 1 like Figures 1 to 3 As shown, this application provides an embodiment of a reverse connection protection circuit packaging structure based on ideal diode control, including: a circuit board 1 and a housing 2, wherein the circuit board 1 is packaged inside the housing 2, and the housing 2 is provided with housing pads 3 for external electrical connection and mechanical fixation.

[0025] The circuit board 1 integrates multiple electronic components, including an ideal diode control chip U1, a MOSFET device Q1, a TVS diode D1, a Zener diode D2, an input filter capacitor C1, an output filter capacitor C3, an output suppression capacitor C2, and a protection resistor R1. The ideal diode control chip U1 includes a gate terminal GATE, a source terminal SOURCE, a power input terminal VCC, an output terminal OUT, and a GND terminal. The source terminal SOURCE and the power input terminal VCC of the ideal diode control chip U1 are shorted and connected to the input VIN network. The output terminal OUT of the ideal diode control chip U1 is connected to the output VOUT network. The GND terminal of the ideal diode control chip U1 is connected to the reference ground through the protection resistor R1. The MOSFET device Q1 has a drain D, a source S, a gate G, and an exposed pad EPAD. The source S of the MOSFET device Q1 is connected to the input VIN network, the drain D of the MOSFET device Q1 is connected to the output VOUT network, and the gate G of the MOSFET device Q1 is connected to the gate terminal GATE of the ideal diode control chip U1. One end of the TVS diode D1 is connected to the input VIN network, and the other end is connected to the reference ground. The TVS diode D1 is a bidirectional diode with a breakdown voltage of 24V. It is used to clamp the input surge voltage and prevent overvoltage damage.

[0026] The cathode of Zener diode D2 is connected to the gate terminal GATE of the ideal diode control chip U1, and the anode of Zener diode D2 is connected to the input VIN network. Zener diode D2 is a 12V Zener diode used to limit the voltage between the gate G and source S of MOSFET device Q1 to within ±12V, thus protecting the gate oxide layer.

[0027] The input filter capacitor C1 is connected between the input VIN network and the reference ground; The output suppression capacitor C2 is connected between the output VOUT network and the GND terminal of the ideal diode control chip U1; The output filter capacitor C3 is connected between the output VOUT network and the reference ground, with the exposed pad EPAD used for heat dissipation and electrical connection; the components on the circuit board surface and the circuit board and the housing are soldered with tin-silver-copper solder to achieve circuit interconnection.

[0028] One end of the protection resistor R1 is connected to the GND terminal of the ideal diode control chip U1, and the other end is connected to the reference ground. The protection resistor R1 and the output suppression capacitor C2 form an RC damping network with a time constant of 1μs, which is used to suppress voltage spikes and oscillations during the gate drive process.

[0029] The circuit board 1 is a four-layer RF-4 substrate with a thickness of 0.6mm and dimensions of 0.95mm × 1.4mm. The ideal diode control chip U1, MOSFET device Q1, TVS diode D1, Zener diode D2, input filter capacitor C1, output suppression capacitor C2, output filter capacitor C3, and protection resistor R1 are all mounted on the same side of the circuit board 1, generally on the top layer. The back of the circuit board 1 has metallized pads, which are electrically connected to the exposed pads EPAD of the MOSFET device Q1 through thermal holes and are used for heat dissipation. The circuit board 1 is fixedly soldered to the base of the housing 2 with solder.

[0030] The outer shell 2 is a metal-ceramic shell. To ensure matching thermal expansion coefficients and low losses, the outer shell 2 is made of 4J34 ceramic-bonded alloy material and is positioned above the circuit board 1. The inner wall of the outer shell 2 is gold-plated to improve electrical performance and corrosion resistance. The outer shell 2 is hermetically sealed using a parallel seam welding process, and the hermetically tightness after welding is ≤1×10⁻⁶. -8Pa·m³ / s, forming a reverse connection protection module to ensure the reliability of the module in harsh environments. The outer shell pad 3 is located on the side wall or bottom of the outer shell 2 for external circuit connections. 4J34 is a ceramic sealing alloy developed based on the characteristics of Chinese ceramics. The alloy has a coefficient of linear expansion similar to 95% Al₂O₃ ceramic in the temperature range of -60℃ to 600℃. It is mainly used for matching and sealing with ceramics and is an important sealing structural material in the outer shell. Its density is approximately 8.29 g / cm³, reflecting the tight bonding of various metallic elements in its composition. Its melting point is as high as approximately 1450℃, exhibiting excellent high-temperature resistance. At 100℃, its thermal conductivity is 17.6 W / m•℃, which is significant for applications in different temperature environments. Its resistivity is 0.45 μΩ•m, a characteristic that makes it suitable for specific applications in electronic components and other fields, effectively controlling current and resistance.

[0031] The output filter capacitor C3 has a capacitance of 2.2μF to suppress gate drive spikes.

[0032] This package structure achieves high-performance reverse connection protection through a compact layout and optimized heat dissipation design, making it suitable for high-density electronic systems.

[0033] Example 2 This application provides an embodiment of a manufacturing method for a reverse connection protection circuit package structure based on ideal diode control, including the following steps, suitable for mass production: Step S1, Solder Paste Printing: Using a precision screen printer, solder paste is printed onto the pads of circuit board 1 according to the pre-designed solder paste stencil. The solder paste is a tin-silver-copper alloy with a melting point of approximately 217°C, providing good soldering reliability. Printing parameters such as pressure, speed, and thickness must be strictly controlled to ensure uniform solder paste coverage. Step S2, Solder Mask Covering Process: Circuit board 1 is a four-layer RF-4 substrate, 0.6mm thick, with dimensions of 0.95mm × 1.4mm. During substrate fabrication, vias are filled with resin using a via-plugging process to prevent solder leakage. The pad surfaces are treated with lead-free tin plating to enhance solderability. The outer copper layer is one ounce thick, and the inner copper layer is also one ounce thick. The input and output power wiring uses four large-area copper layers, with electrical connections between upper and lower layers achieved through vias. The via diameter is 0.55mm, and the aperture is 0.4mm. Specifically, the VCC terminal of the ideal diode control chip U1 is connected to the upper and lower layers through 18 vias to reduce impedance; the OUT terminal is connected to the upper and lower layers through 31 vias to ensure high current carrying capacity. Step S3, Component Soldering: Solder the components onto the PCB board, and then solder the PCB board onto the housing. Using a pick-and-place machine, precisely mount the components—ideal diode control chip U1, MOSFET device Q1, TVS diode D1, Zener diode D2, input filter capacitor C1, output suppression capacitor C2, output filter capacitor C3, and protection resistor R1—to their predetermined positions on the circuit board 1. Simultaneously, align the circuit board 1 and place it onto the base of the housing 2. Perform a single soldering operation using a reflow oven. The soldering profile is optimized based on tin-silver-copper solder, with a peak temperature of approximately 240°C, ensuring reliable soldering of the components, the board, and the housing. Step S4, Cleaning: Remove contaminants from the assembled components. After welding, use volatile organic solvents or water-based cleaning agents, and use ultrasonic cleaning or spray cleaning to remove flux residue, dust and other contaminants from the components to prevent electrical faults. Step S5, Intermediate Electrical Testing: Before packaging, the assembled circuit undergoes electrical performance testing. This includes input / output characteristics, reverse connection protection, surge withstand testing, etc. Automated testing equipment is used to verify that the circuit meets design specifications, and defective products are rejected. Step S6, Internal Visual Inspection: Inspect the materials, structure, and manufacturing process inside the circuit. Detect or reject components with internal defects before packaging. Use a microscope or automated optical inspection system to check the integrity of materials, component placement, solder joint quality, and manufacturing defects inside the circuit. Detecting internal defects before packaging ensures product reliability. Step S7, Encapsulation: In a high-purity nitrogen environment, using a parallel seam welder, the base and cover plate are fully fused together. Through the relative movement of the electrodes and base, a continuous and complete seam weld is generated, forming an hermetic encapsulation of the product. The tested and qualified components are placed in a high-purity nitrogen environment, and the base and cover plate of the outer casing are seam welded using a parallel seam welder. During welding, the relative movement of the electrodes and base produces a continuous and uniform weld seam, forming an hermetic encapsulation of the product. Seam welding parameters need to be optimized to ensure an airtightness ≤ 1×10⁻⁶. -8 Pa·m³ / s; Step S8, Laser Marking: Use a high-precision laser marking machine to form markings on the cover plate. Use a high-precision laser marking machine to engrave markings on the cover plate of the outer shell 2, such as product model, batch number, date code, etc., to facilitate traceability and identification.

[0034] In a further preferred embodiment, in step S3, component soldering and PCB board soldering to the housing are performed simultaneously, using tin-silver-copper soldering.

[0035] Example 3 This embodiment combines the packaging structure of Embodiment 1 and the manufacturing method of Embodiment 2 to provide a specific application example for reverse power connection protection of automotive electronic systems.

[0036] Component selection: Ideal diode control chip U1: LM5050-1 type chip is selected, which supports wide voltage input.

[0037] MOSFET device Q1: IRF7416 N-channel MOSFET is selected, with a drain-source voltage rating of 60V and an on-resistance of less than 10mΩ.

[0038] TVS diode D1: Select SMBJ24A type bidirectional TVS, with a breakdown voltage of 24V and a peak pulse power of 600W.

[0039] Zener diode D2: Select BZT52C12 type 12V Zener diode with a power rating of 500mW.

[0040] The input filter capacitor C1, output suppression capacitor C2, and output filter capacitor C3 are all ceramic chip capacitors. The capacitance of the input filter capacitor C1 is 0.22μF and the voltage rating is 50V. The capacitance of the output suppression capacitor C2 is 47nF and the capacitance of the output filter capacitor C3 is 2.2μF.

[0041] Protection resistor R1: resistance value 22Ω, accuracy 1%, forming an RC network with output suppression capacitor C2 and a time constant of 1μs.

[0042] Manufacturing details: Production was carried out according to the steps of Example 2, wherein the soldering in step S3 used Sn96.5Ag3.0Cu0.5 solder, and the peak reflow soldering temperature was controlled at 235℃±5℃. The encapsulation in step S7 was carried out in a nitrogen atmosphere, and the seam welding speed was set to 10mm / s to ensure uniform weld seam.

[0043] Test results: The final module was tested within a temperature range of -40℃ to 125℃, with a reverse connection protection response time of less than 1μs, an input surge withstand capability of 40V, and passed the airtightness test. The module is small in size and suitable for space-constrained automotive ECUs.

[0044] This embodiment demonstrates the effectiveness of the packaging structure and method in high-pressure, high-reliability scenarios.

[0045] Example 4 This embodiment provides a modified design that focuses on heat dissipation optimization and cost control.

[0046] Structural variations: Circuit board 1 uses an aluminum substrate, such as AL-1060, instead of the RF-4 substrate, with a thickness of 1.0mm to enhance heat dissipation. The exposed pads (EPAD) of MOSFET device Q1 are directly bonded to the back of the substrate using thermally conductive adhesive, and heat dissipation fins are added to the back. The housing 2 is replaced with a plastic encapsulation material, such as PPS, and is injection molded. It is not hermetically sealed, but meets the IP67 protection rating, making it suitable for consumer electronics.

[0047] Manufacturing variations: The manufacturing method is simplified by omitting the hermetic sealing step S7 and replacing it with injection molding. Lead-tin solder is used for soldering in step S3 to reduce costs. Other steps are similar to those in Example 2.

[0048] This variant retains the reverse connection protection function while reducing costs, making it suitable for the low-to-mid-range market.

[0049] The core effect of this application's technical solution is to integrate a high-performance, high-reliability reverse connection protection circuit into an ultra-small, hermetic module using advanced packaging technology. This resolves the inherent contradictions of traditional discrete solutions in balancing size, performance, and reliability, making it particularly suitable for applications with stringent requirements regarding space, weight, and environmental adaptability. Through system-level circuit design, miniaturized structural layout, and highly reliable hermetic packaging technology, a reverse connection protection circuit module with high efficiency, fast response, multiple protections, ultra-small size, and strong environmental adaptability has been successfully created. It effectively addresses the challenges faced by high-end electronic systems in terms of power density, energy efficiency, and long-term reliability.

[0050] Of course, the above embodiments are not intended to limit this application, and this application is not limited to the examples given above. Any changes, modifications, additions or substitutions made by those skilled in the art within the scope of this application should also fall within the protection scope of this application.

Claims

1. A reverse connection protection circuit package structure based on ideal diode control, characterized in that: include: The circuit board (1) and the housing (2) are encapsulated in the housing (2). The housing (2) is provided with housing pads (3). The circuit board (1) is provided with an ideal diode control chip U1, a MOSFET device Q1, a TVS diode D1, a Zener diode D2, an input filter capacitor C1, an output filter capacitor C3, an output suppression capacitor C2 and a protection resistor R1. The ideal diode control chip U1 includes a gate terminal GATE, a source terminal SOURCE, a power input terminal VCC, an output terminal OUT and a GND terminal. The source terminal SOURCE and the power input terminal VCC of the ideal diode control chip U1 are shorted and connected to the input VIN network. The output terminal OUT of the ideal diode control chip U1 is connected to the output VOUT network. The GND terminal of the ideal diode control chip U1 is connected to the reference ground through the protection resistor R1. The MOSFET device Q1 has a drain D, a source S, a gate G, and an exposed pad EPAD. The source S of the MOSFET device Q1 is connected to the input VIN network, the drain D of the MOSFET device Q1 is connected to the output VOUT network, and the gate G of the MOSFET device Q1 is connected to the gate terminal GATE of the ideal diode control chip U1. One end of TVS diode D1 is connected to the input VIN network, and the other end is connected to the reference ground; The cathode of Zener diode D2 is connected to the gate terminal GATE of the ideal diode control chip U1, and the anode of Zener diode D2 is connected to the input VIN network. The input filter capacitor C1 is connected between the input VIN network and the reference ground; The output suppression capacitor C2 is connected between the output VOUT network and the GND terminal of the ideal diode control chip U1; The output filter capacitor C3 is connected between the output VOUT network and the reference ground.

2. The reverse connection protection circuit packaging structure based on ideal diode control according to claim 1, characterized in that: The circuit board (1) is a four-layer RF-4 board with a thickness of 0.6 mm and an external size of 0.95 mm × 1.4 mm. The ideal diode control chip U1, MOSFET device Q1, TVS diode D1, Zener diode D2, input filter capacitor C1, output suppression capacitor C2, output filter capacitor C3, and protection resistor R1 are all mounted on the same side of the circuit board (1). The metallized pads on the back of the circuit board (1) are electrically connected to the exposed pads EPAD of the MOSFET device Q1 and are used for heat dissipation. The circuit board (1) is soldered onto the outer shell (2).

3. The reverse connection protection circuit packaging structure based on ideal diode control according to claim 1, characterized in that: The outer shell (2) is a metal-ceramic shell, which is positioned above the circuit board (1) and is hermetically sealed using a parallel seam welding process to form a reverse connection protection module.

4. The reverse connection protection circuit packaging structure based on ideal diode control according to claim 1, characterized in that: The TVS diode D1 is a bidirectional diode with a breakdown voltage of 24V, used to clamp input surges; the Zener diode D2 is a 12V Zener diode, used to limit the gate and source voltages of the MOSFET device Q1 to within ±12V.

5. The reverse connection protection circuit packaging structure based on ideal diode control according to claim 1 or 2, characterized in that: The input filter capacitor C1 has a capacitance of 0.22μF, the output filter capacitor C3 has a capacitance of 2.2μF, and the output suppression capacitor C2 has a capacitance of 47nF. Together with the protection resistor R1, they form an RC damping network with a time constant of 1μs to suppress gate drive spikes.

6. The reverse connection protection circuit packaging structure based on ideal diode control according to any one of claims 1 to 4, characterized in that: The outer shell (2) is a metal-ceramic shell, and the inner wall of the outer shell (2) is gold-plated. After seam welding, the airtightness is ≤1×10. -8 Pa·m³ / s.

7. The reverse connection protection circuit packaging structure based on ideal diode control according to claim 6, characterized in that: The outer shell (2) is made of 4J34 ceramic sealing alloy material.

8. The reverse connection protection circuit packaging structure based on ideal diode control according to claim 1, characterized in that: The MOSFET device Q1 is an N-type low-impedance power MOSFET.

9. A method for manufacturing a reverse connection protection circuit package structure based on ideal diode control, characterized in that: Includes the following steps: Step S1, Solder paste printing: Use a precision screen printing machine to print solder paste according to the solder paste stencil; Step S2, Solder mask covering process: The circuit board (1) is a four-layer RF-4 board with a thickness of 0.6mm and an external size of 0.95mm×1.4mm. Through-hole plug resin is used, and lead-free soldering is used for the solder pads. The outer copper layer has a thickness of one ounce, and the inner copper layer has a thickness of one ounce. The input and output power wiring is a four-layer large-area copper layer. The upper and lower layers are connected through vias with a diameter of 0.55mm and a hole diameter of 0.4mm. Among them, the VCC terminal of the ideal diode control chip U1 is connected to the upper and lower layers through 18 vias; the OUT terminal of the ideal diode control chip U1 is connected to the upper and lower layers through 31 vias. Step S3, Component Soldering: Solder the components onto the PCB board and the PCB board onto the casing; Step S4, Cleaning: Remove contaminants from the assembled components; Step S5, Intermediate power test: Test circuit performance; Step S6, Internal Visual Inspection: Inspect the materials, structure and manufacturing process inside the circuit, and detect or remove devices with internal defects before packaging; Step S7, Packaging: In a high-purity nitrogen environment, a parallel seam welding machine is used to fully fuse the base and the cover plate, and through the relative movement of the electrode and the base, a continuous and complete seam weld is generated, so that the product forms an airtight package. Step S8, Laser Marking: Use a high-precision laser marking machine to form markings on the cover plate.

10. A method for manufacturing a reverse connection protection circuit package structure based on ideal diode control according to claim 9, characterized in that: In step S3, component soldering and PCB board soldering to the outer casing are performed simultaneously, using tin-silver-copper soldering.

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