Film layer preparation method and semiconductor process equipment

Abstract

The invention provides a film layer preparation method and semiconductor process equipment. According to the film layer preparation method, a substrate is obtained, and thin film deposition is carried out on the substrate by adopting an atomic layer deposition technology; in the deposition process, multiple deposition layers are generated according to the number of cycles, and a film layer is formed through the multiple deposition layers; wherein after each deposition layer is generated, the particle cleaning step is executed, and the particle cleaning step comprises a first blowing action, an air exhaust action and a second blowing action which are executed in sequence. According to the film layer preparation mode, the particle cleaning step is added between the deposition layers, so that the problem of particles generated in the film layer deposition process is remarkably reduced, the situation that a user manually purges a chamber pipeline between wafer batches is avoided, continuous tape-out in the wafer machining process is achieved, manpower and time are saved, and the production efficiency is improved. And the productivity of semiconductor process equipment is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to methods for preparing film layers and semiconductor process equipment. Background Technology

[0002] Atomic layer deposition (ALD) is a thin film preparation technique based on surface chemical reactions. It involves alternately pulsedly introducing a gaseous precursor into a reaction chamber, causing the precursor to undergo a gas-solid phase chemical adsorption reaction on the substrate surface to form a thin film. In this technique, alumina (Al₂O₃) films typically use trimethylaluminum (C₃H₉Al) as the aluminum source, which is generated through a reaction with water vapor (H₂O) or ozone (O₃).

[0003] In related technical solutions, when using trimethylaluminum and water vapor to generate an alumina film, the process formulation typically involves batch deposition of the alumina film, with no more than seven wafers deposited at a time. If more than seven wafers are continuously grown, the particle count on the wafer surface will increase significantly. Furthermore, a chamber purging function is added between batches; that is, after the growth of seven wafers, the chamber piping is manually purged to reduce the particle count when the next batch of wafers is deposited with an alumina film. However, this batch deposition scheme not only fails to meet the user's continuous wafer fabrication requirements but also leads to a significant decrease in the capacity of semiconductor process equipment, thus failing to meet actual production needs. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a method for preparing a film layer and semiconductor process equipment to alleviate the above-mentioned problems.

[0005] In a first aspect, embodiments of the present invention provide a method for preparing a film layer, the method comprising: obtaining a substrate, and performing thin film deposition on the substrate using atomic layer deposition technology; during the deposition process, generating multiple deposition layers according to the number of cycles, and forming a film layer through the multiple deposition layers; wherein, after each deposition layer is generated, a particle cleaning step is performed, the particle cleaning step comprising: a first purging action, an evacuation action, and a second purging action performed sequentially.

[0006] Optionally, the method further includes performing a particle cleaning step when a preset number of deposition layers are generated.

[0007] Optionally, the method further includes: performing a particle cleaning step when the generated film layer reaches a preset thickness.

[0008] Optionally, the first purging action is used to purge the chamber pipeline with a first purging gas, the evacuation action is used to evacuate the chamber pipeline, and the second purging action is used to purge the chamber pipeline with a second purging gas; wherein the direction of evacuation is opposite to the direction of purging.

[0009] Optionally, prior to the step of performing thin film deposition on the substrate using atomic layer deposition technology, the method further includes: controlling a first precursor to enter the exhaust gas treatment device through a chamber pipeline, and controlling a second precursor to enter the process chamber through a chamber pipeline.

[0010] Optionally, before the step of controlling the first precursor to enter the exhaust gas treatment equipment through the chamber pipeline, the method further includes: controlling the process chamber to be in a vacuum environment and controlling the pressure of the process chamber according to a preset mode.

[0011] Optionally, the preset mode includes an opening mode and a pressure control mode. The steps of controlling the pressure of the process chamber according to the preset mode include: adjusting the opening of the butterfly valve according to the opening mode to adjust the pressure of the process chamber until the opening of the butterfly valve is the preset opening; and switching to the pressure control mode and adjusting the pressure of the process chamber according to the pressure control mode until the pressure of the process chamber reaches the preset pressure value.

[0012] Optionally, the method further includes purging the process chamber after the film deposition is completed.

[0013] In a second aspect, embodiments of the present invention also provide a semiconductor process apparatus, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the film preparation method of the first aspect described above.

[0014] Thirdly, embodiments of the present invention also provide a computer-readable storage medium storing a computer program, which, when run by a processor, executes the steps of the film preparation method described in the first aspect.

[0015] The embodiments of the present invention bring the following beneficial effects: This invention provides a film preparation method and semiconductor process equipment. A substrate is obtained, and thin films are deposited on the substrate using atomic layer deposition (ALD) technology. During the deposition process, multiple deposition layers are generated according to the number of cycles, and a film is formed through these multiple deposition layers. After each deposition layer is formed, a particle cleaning step is performed, which includes, sequentially, a first purging action, a vacuuming action, and a second purging action. This film preparation method, by adding a particle cleaning step between deposition layers, not only significantly reduces particle problems generated during film deposition but also avoids manual purging of the cavity piping between wafer batches, thereby achieving continuous wafer fabrication, saving manpower and time, and increasing the throughput of semiconductor process equipment.

[0016] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention are realized and obtained through the structures particularly pointed out in the description and the drawings.

[0017] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 A flowchart of a film preparation method provided in an embodiment of the present invention; Figure 2 A flowchart of another film preparation method provided in an embodiment of the present invention. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] To facilitate understanding of this embodiment, the embodiments of the present invention will be described in detail below.

[0022] Example 1 This invention provides a method for preparing a film layer, such as... Figure 1 As shown, the method includes the following steps: Step S102: Obtain the substrate and perform thin film deposition on the substrate using atomic layer deposition technology.

[0023] Step S104: During the deposition process, multiple deposition layers are generated according to the number of cycles, and a film layer is formed through the multiple deposition layers; wherein, after each deposition layer is generated, a particle cleaning step is performed, which includes the following actions performed in sequence: a first purging action, an air extraction action, and a second purging action.

[0024] Specifically, during film deposition, particles can be generated in the chamber piping, leading to particle problems in the deposited film. Simple purging is insufficient to effectively remove these particles. Therefore, this invention optimizes the deposition process formulation by adding a particle cleaning step after each deposition layer. This step removes particles adhering to the chamber piping, preventing them from entering the process chamber and adhering to the wafer surface. This significantly reduces particle problems during film deposition and eliminates the need for manual purging of the chamber piping between wafer batches. It enables continuous wafer fabrication, saving time and manpower, and increasing the throughput of semiconductor process equipment.

[0025] In one embodiment, the method further includes performing a particle cleaning step when a preset number of deposition layers are generated.

[0026] Specifically, during the deposition process, in addition to performing a particle cleaning step after each deposition layer is generated, a particle cleaning step can also be performed when a preset number of deposition layers are generated. For example, a particle cleaning step can be performed once every N (N is a positive integer greater than 1) deposition layers. This not only ensures that particles in the chamber pipeline are completely removed, but also reduces the number of times the particle cleaning step is run, further improving the productivity of semiconductor process equipment.

[0027] In one embodiment, the method further includes performing a particle cleaning step when the generated film layer reaches a preset thickness.

[0028] Specifically, during the deposition process, in addition to performing a particle cleaning step after each deposition layer is formed, a particle cleaning step can also be performed when the generated film layer reaches a preset thickness. For example, a particle cleaning step is performed whenever the cumulative thickness of the film layer reaches a preset thickness (such as a preset thickness ≥ 1 nm). This not only ensures that particles in the chamber pipeline are completely removed, but also reduces the number of times the particle cleaning step is run, further improving the productivity of semiconductor process equipment.

[0029] In one embodiment, during the particle cleaning step, the first purging action is used to purge the chamber pipeline with a first purging gas to remove residual particles in the chamber pipeline; the evacuation action is used to evacuate the chamber pipeline, and if there are difficult-to-remove attached particles in the chamber pipeline, the attached particles can be loosened by evacuation; at this time, the second purging action is used to purge the chamber pipeline with a second purging gas, thereby thoroughly cleaning the particles attached to the chamber pipeline.

[0030] In this invention, both the first and second purge gases are inert gases, specifically nitrogen. Furthermore, the direction of the extraction is opposite to the direction of the purge. Therefore, in the particle cleaning step, the first purge action removes residual particles from the chamber pipeline, followed by an extraction action in the opposite direction of the purge to loosen the particles adhering to the chamber pipeline. Finally, the second purge action thoroughly cleans the particles from the chamber pipeline. In other words, the particles in the chamber pipeline are first purged in the forward direction, then subjected to the force of the reverse extraction, and finally purged in the forward direction again, resulting in the complete removal of particles from the chamber pipeline. This significantly reduces particle problems generated during the film deposition process, eliminating the need for manual purge of the chamber pipeline between wafer batches, enabling continuous wafer fabrication, saving manpower and time, and increasing the productivity of semiconductor process equipment.

[0031] In one embodiment, before performing thin film deposition on a substrate using atomic layer deposition technology, the method further includes: controlling a first precursor to enter an exhaust gas treatment device through a chamber pipeline, and controlling a second precursor to enter a process chamber through a chamber pipeline.

[0032] The first precursor includes, but is not limited to, an aluminum source, a hafnium source, etc., and the second precursor includes, but is not limited to, water vapor or ozone, etc. The specific first and second precursors can be set according to actual conditions, as long as the first and second precursors react to generate the corresponding thin film. For ease of understanding, this embodiment of the invention uses aluminum source, specifically trimethylaluminum, as the first precursor and water vapor as the second precursor as an example.

[0033] Specifically, the first precursor (i.e., trimethylaluminum) is first controlled to enter the exhaust gas treatment equipment (scrubber) through the chamber pipeline. This is achieved by opening the pneumatic valve in the source bottle containing the first precursor, such as the trimethylaluminum source bottle, to allow trimethylaluminum to flow out for a certain duration, such as 0.3 seconds. The trimethylaluminum is then controlled to enter the forline pipeline through the chamber pipeline and discharged to the exhaust gas treatment equipment via the forline pipeline. After a period of process idle time, due to potential pressure buildup inside the trimethylaluminum source bottle, opening the pneumatic valve of the trimethylaluminum source bottle for 0.3 seconds not only opens the valve through airflow but also relieves pressure, thus stabilizing the pressure inside the trimethylaluminum source bottle.

[0034] Furthermore, the second precursor (water vapor) is controlled to enter the process chamber through the chamber piping. This can be achieved by opening a quick-release valve in the source bottle containing the second precursor, such as a water vapor source bottle, to allow water vapor to flow out for a certain duration, such as 0.2 seconds, thus controlling the water vapor's entry into the process chamber through the chamber piping. After a period of process idle time, pressure may accumulate inside the water vapor source bottle. Opening the water vapor source bottle for 0.2 seconds at this time serves to release the pressure. Specifically, by introducing water vapor into the process chamber through the chamber piping, a layer of hydroxyl groups can be adsorbed onto the substrate surface, providing pretreatment for subsequent thin film deposition.

[0035] In one embodiment, before the step of controlling the first precursor to enter the exhaust gas treatment equipment through the chamber pipeline, the method further includes: controlling the process chamber to be in a vacuum environment and controlling the pressure of the process chamber according to a preset mode.

[0036] The preset modes include an opening mode and a pressure control mode. Specifically, the opening of the butterfly valve is adjusted according to the opening mode to adjust the pressure of the process chamber until the opening of the butterfly valve is the preset opening. Then, the pressure control mode is switched to, and the pressure of the process chamber is adjusted according to the pressure control mode until the pressure of the process chamber reaches the preset pressure value.

[0037] In practical applications, butterfly valves are installed on the chamber piping. The pressure in the process chamber can be adjusted by controlling the opening degree of the butterfly valve. Therefore, in the opening mode, the opening degree of the butterfly valve is gradually reduced from the initial opening until it reaches the preset opening degree. For example, first, the butterfly valve opening is controlled at the initial opening degree, such as 95%, then the opening degree is reduced to 90%, and finally the opening degree is controlled at the preset opening degree, such as 87%. Thus, in the opening control mode, by adjusting the butterfly valve opening, pressure is gradually controlled, allowing the pressure in the process chamber to increase slowly. This avoids sudden pressure changes in the process chamber causing particles in the process chamber to be blown to the substrate surface, thereby further reducing particle problems during the film deposition process.

[0038] Furthermore, when the butterfly valve is open at a preset degree, the system switches to pressure control mode and adjusts the pressure in the process chamber accordingly. In this embodiment, the preset pressure value for the process chamber is set to 1 Torr. Adjusting the pressure in the process chamber to this preset value using pressure control mode avoids sudden pressure changes and reduces particle problems during film deposition. It should be noted that the specific preset pressure value can be set according to actual conditions.

[0039] In one embodiment, the method further includes: after the film deposition is completed, purging the process chamber to remove any remaining precursors in the process chamber, thereby ensuring the processing quality of subsequent wafers entering the process chamber for further processing.

[0040] In summary, the film preparation method provided by the embodiments of the present invention, based on the existing film deposition process formulation, effectively removes particles that are difficult to remove from the chamber pipeline by adding a particle cleaning step between the deposition layers. This not only significantly reduces the particle problem generated during the film deposition process, but also avoids the need for users to manually perform purging of the chamber pipeline between wafer batches, thereby realizing continuous wafer fabrication, saving manpower and time, and improving the production capacity of semiconductor process equipment.

[0041] Example 2 Based on the above method embodiments, this invention also provides another film preparation method, which describes the entire process of trimethylaluminum and water vapor regenerating an alumina film. For example... Figure 2 As shown, the method includes the following steps: Step S202: Evacuate the process chamber to remove impurity gases from the process chamber and prevent side reactions between impurity gases and precursors, which could affect the quality of the film.

[0042] Step S204: Control the opening degree of the butterfly valve to the first opening degree; that is, adjust the pressure of the process chamber according to the opening degree mode at this time, wherein the first opening degree is the initial opening degree, preferably 95%.

[0043] Step S206: Control the opening degree of the butterfly valve to a second opening degree; wherein, the second opening degree is preferably 90%.

[0044] Step S208: Control the opening degree of the butterfly valve to the third opening degree; wherein, the third opening degree is a preset opening degree, preferably 87%.

[0045] Therefore, through steps S204 to S208, the pressure of the process chamber is adjusted according to the opening mode. This adjustment method can achieve gradual pressure control, so that the pressure of the process chamber is slowly increased, avoiding the particles in the process chamber being blown to the substrate surface due to sudden pressure changes in the process chamber, thereby further reducing particle problems in the film deposition process.

[0046] Step S210: Adjust the pressure of the process chamber according to the pressure control mode until the pressure of the process chamber reaches the preset pressure value.

[0047] When the butterfly valve reaches the preset opening degree, the system switches to pressure control mode and adjusts the pressure in the process chamber according to this mode to ensure a smooth pressure adjustment until the pressure reaches the preset pressure value, preferably 1 Torr. Therefore, through steps S202 to S210, a stable process chamber environment is achieved, providing a better environment for subsequent film deposition and further ensuring film quality.

[0048] Step S212: Open the pneumatic valve of the trimethylaluminum source bottle for 0.3s to depressurize the trimethylaluminum source bottle. After a period of process idle time, there may be pressure buildup inside the trimethylaluminum source bottle. At this time, by opening the pneumatic valve of the trimethylaluminum source bottle and holding it for 0.3s, not only can the pneumatic valve of the trimethylaluminum source bottle be opened by air flow, but it can also achieve the purpose of depressurization to stabilize the pressure inside the trimethylaluminum source bottle.

[0049] Step S214, First purging step: After the pneumatic valve of the trimethylaluminum source bottle is opened in step S212, some trimethylaluminum will be carried through the chamber pipeline. At this time, through the first purging step, the purging gas such as nitrogen is purged to the chamber pipeline of the trimethylaluminum to clean it, so as to avoid residual trimethylaluminum precursor in the chamber pipeline.

[0050] Step S216: Open the quick valve of the water vapor source bottle for 0.2s to depressurize the water vapor source bottle. After a period of process idle time, there may be pressure buildup inside the water vapor source bottle. At this time, by opening the quick valve of the water vapor source bottle and holding it for 0.2s, not only can pressure be depressurized, but a layer of hydroxyl groups can also be adsorbed on the substrate surface to pre-treat for subsequent thin film deposition.

[0051] Step S218, second purging step: After the quick valve of the water vapor source bottle is opened in step S216, some water vapor will be carried through the chamber pipeline. At this time, through the second purging step, the purging gas such as nitrogen is purged to the chamber pipeline through which the water vapor passes to clean it, so as to avoid the residual water vapor precursor in the chamber pipeline.

[0052] Step S220, thin film deposition: Trimethylaluminum and water vapor are sequentially introduced into the process chamber through the chamber pipeline to react the trimethylaluminum and water vapor to generate an alumina film; wherein, during the thin film deposition process, the process is carried out according to the formula of trimethylaluminum pulse step - third purging step - water vapor pulse step - fourth purging step until the film deposition is completed.

[0053] (1) For the trimethylaluminum pulse step; when trimethylaluminum is introduced, a first dilution gas is also included; wherein the flow rate ratio of trimethylaluminum to the first dilution gas is 1:50~1:200.

[0054] In practical applications, the flow rate of trimethylaluminum directly affects the reaction rate and the growth rate of the alumina film. For example, a higher flow rate of trimethylaluminum can increase the reaction rate, but excessively high flow rates will lead to precursor supersaturation, resulting in particulate or uneven film layers. Therefore, an appropriate flow rate of trimethylaluminum ensures that the precursor is uniformly distributed on the substrate surface, forming a high-quality film. Furthermore, excessively low flow rates will result in discontinuous or uneven film thickness. Therefore, to ensure the quality of the alumina film, the flow rate of trimethylaluminum is typically between 1 sccm and 50 sccm, and can be adjusted adaptively according to actual conditions.

[0055] Furthermore, when trimethylaluminum is introduced, a first dilution gas is included to uniformly transport the trimethylaluminum precursor to the process chamber and ensure its uniform distribution on the substrate surface. This gas controls the concentration of trimethylaluminum within the process chamber, preventing excessively high trimethylaluminum precursor concentrations that could lead to uneven reaction and decreased film quality. The first dilution gas includes, but is not limited to, nitrogen, but is preferably used in this embodiment of the invention. The flow rate of nitrogen is 500 sccm to 2000 sccm, and can be adjusted according to actual conditions.

[0056] Furthermore, the flow ratio of trimethylaluminum to the first dilution gas also determines the precursor concentration in the process chamber. A higher flow ratio, such as 1:50, will result in a higher concentration of the trimethylaluminum precursor, which may increase the reaction rate and film growth rate. However, excessively high concentrations may lead to uneven film formation or particle formation. Therefore, an appropriate flow ratio of trimethylaluminum to the first dilution gas can ensure the uniform distribution of the trimethylaluminum precursor in the process chamber, thereby regulating the reaction rate and reaction conditions, ensuring that the process chamber operates under optimal conditions, and thus improving the uniformity and quality of the film. Based on this, in the embodiments of the present invention, the flow ratio of trimethylaluminum to the first dilution gas is satisfied to be 1:50 to 1:200, preferably 1:100, and can be set according to actual conditions.

[0057] In practical applications, when using atomic layer deposition (ALD) to generate alumina films, the heater temperature and the chamber pressure are two key process parameters that significantly impact the quality and performance of the film. Specifically, when introducing trimethylaluminum, to ensure effective decomposition and reaction of the trimethylaluminum precursor on the substrate surface, excessively low temperatures may lead to incomplete decomposition, affecting the uniformity and quality of the film. Conversely, excessively high temperatures may cause over-decomposition or volatilization of the trimethylaluminum precursor, affecting the uniformity and thickness control of the film. Considering that temperature stability and uniformity are crucial for process repeatability and stability, the heater temperature should be controlled between 200℃ and 300℃. In this embodiment of the invention, the preferred heater temperature is 250℃, but adjustments can be made based on actual conditions.

[0058] Furthermore, chamber pressure affects the reaction rate and the diffusion rate of the trimethylaluminum precursor. Excessive chamber pressure may lead to oversaturation of the trimethylaluminum precursor, resulting in the formation of particles or an uneven film layer; while insufficient chamber pressure may lead to insufficient transport of the trimethylaluminum precursor, affecting the uniformity and thickness control of the film layer. Therefore, appropriate chamber pressure can not only ensure the uniform transport of the trimethylaluminum precursor in the process chamber and avoid local oversaturation or undersaturation, but also ensure the uniform distribution of the trimethylaluminum precursor on the substrate surface, improving the uniformity and quality of the film layer. Thus, the range of chamber pressure is 1 Torr to 5 Torr, and 1 Torr is preferred in the embodiments of the present invention. The specific pressure can be adjusted adaptively according to the actual situation.

[0059] Therefore, by adjusting the flow rate of the first dilution gas, the temperature of the heater, and the chamber pressure during the trimethylaluminum introduction stage, not only is the uniform transport of the trimethylaluminum precursor within the process chamber ensured, but also the uniform distribution of the trimethylaluminum precursor on the substrate surface is guaranteed, thereby improving the uniformity and quality of the alumina film.

[0060] (2) For the third purging step; the process parameters include, but are not limited to: the chamber pressure is 1 Torr to 5 Torr; and / or, the heater temperature is 200°C to 300°C, the flow rate of the purging gas is 100 sccm to 1000 sccm, etc. For example, in the embodiment of the present invention, the preferred chamber pressure in the third purging step is 1 Torr, the heater temperature is 250°C, and the flow rate of the purging gas, such as nitrogen, is 800 sccm.

[0061] In the third purging step, the purge gas plays the following roles: ① Removing residual precursors: The purge gas effectively removes residual trimethylaluminum precursors from the process chamber, preventing unnecessary reactions with reactants (such as water vapor) in subsequent reaction steps and reducing cross-contamination. Furthermore, removing residual trimethylaluminum precursors ensures consistent precursor concentrations in each reaction step, improving film uniformity and quality. ② Ensuring the independence of reaction steps: The purge gas ensures no residual precursors between each reaction step (such as trimethylaluminum pulses and water vapor pulses), guaranteeing the independence and repeatability of each step. Ensuring the independence of each reaction step improves process stability and repeatability, reducing process fluctuations. ③ Controlling the reaction rate: An appropriate purge gas flow rate can control the reaction rate, ensuring the reaction proceeds under optimal conditions. Excessive purge gas flow rate may lead to insufficient precursor transport, affecting the reaction rate; insufficient purge gas flow rate may result in precursor residues, affecting film quality. Therefore, in the third purging step, the purging gas ensures the independence and repeatability of each reaction step, further improving the uniformity and quality of the film.

[0062] (3) For the water vapor pulse step; when water vapor is introduced, a second dilution gas is also included; wherein the flow rate ratio of water vapor and the second dilution gas is 1:10~1:100.

[0063] Specifically, a suitable second dilution gas flow rate allows water vapor to be evenly distributed within the process chamber, thus facilitating a sufficient reaction with the trimethylaluminum precursor adsorbed on the substrate to form a uniform alumina film. However, if the water vapor flow rate is too high or the second dilution gas flow rate is too low, the water vapor concentration may be excessively high in certain areas, leading to an overly vigorous reaction and uneven film growth. Conversely, if the water vapor flow rate is too low or the second dilution gas flow rate is too high, the reaction may be insufficient, affecting the deposition rate and quality of the film. Therefore, the flow rate ratio of water vapor to the second dilution gas needs to be between 1:10 and 1:100 to ensure sufficient reaction between the water vapor and the trimethylaluminum precursor adsorbed on the substrate, thereby improving the uniformity of the alumina film.

[0064] Furthermore, by adjusting the flow rate ratio of water vapor and the second dilution gas, the reaction rate can be controlled to some extent. For example, when the flow rate ratio of water vapor and the second dilution gas is appropriate, deposition can proceed at the expected rate, thereby precisely controlling the film thickness. Additionally, stable control of the second dilution gas flow rate helps maintain stable pressure in the process chamber, providing a stable reaction environment for the ALD process, which is crucial for ensuring film quality and repeatability. In this embodiment of the invention, the flow rate of the second dilution gas is 500 sccm to 2000 sccm, and can be set according to actual conditions.

[0065] Furthermore, the steam pulse introduction step also includes, but is not limited to, the following process parameters: steam flow rate of 1 sccm to 100 sccm; and / or, heater temperature of 200°C to 300°C; and / or, chamber pressure of 1 Torr to 5 Torr, etc. Therefore, by adjusting the flow rate of the second dilution gas, the heater temperature, and the chamber pressure during the steam introduction stage, the uniformity and quality of the alumina film layer are further improved. It should be noted that in some scenarios, ozone can be used instead of steam.

[0066] (4) For the fourth purging step; the fourth purging step includes, but is not limited to, the following process parameters: the flow rate of the purging gas is 100 sccm to 1000 sccm; and / or, the temperature of the heater is 200℃ to 300℃; and / or, the chamber pressure is 1 Torr to 5 Torr, etc. For example, in the fourth purging step, the flow rate of the purging gas is 500 sccm, the temperature of the heater is 250℃, and the chamber pressure is 1 Torr. The specific parameters can be adjusted according to the actual situation.

[0067] In practical applications, the fourth purging step not only removes residual precursors—for example, the purge gas effectively removes residual water vapor precursors from the process chamber, preventing unnecessary reactions with reactants (such as trimethylaluminum) in subsequent reaction steps and reducing cross-contamination—but also ensures consistent precursor concentrations in each reaction step, improving membrane uniformity and quality. Furthermore, it guarantees the independence of reaction steps; the purge gas ensures no residual precursors between each reaction step (such as trimethylaluminum pulses and water vapor pulses), guaranteeing the independence and repeatability of each step, improving process stability and repeatability, and reducing process fluctuations. Additionally, an appropriate purge gas flow rate can control the reaction rate, ensuring the reaction proceeds under optimal conditions. Excessive purge gas flow rate may lead to insufficient precursor transport, affecting the reaction rate; insufficient purge gas flow rate may result in precursor residues, affecting membrane quality. Therefore, the fourth purging step, by ensuring the independence and repeatability of each reaction step through the purge gas, further improves the uniformity and quality of the membrane.

[0068] It should be noted that since the process for growing the alumina film is the ALD process, which does not involve upper and lower RF power supplies, there is no need to set the power of the upper and lower RF power supplies in the above process formula.

[0069] Step S222, First purging action: Use purging gas such as nitrogen to purge the chamber pipeline to remove residual particles in the chamber pipeline.

[0070] Step S224, evacuation action: After the first purging action is completed, the chamber pipeline is evacuated. If there are particles that are difficult to remove attached to the chamber pipeline, the attached particles can be loosened by the two opposing forces of blowing and evacuating.

[0071] Step S226, second purging action: After the evacuation action is completed, nitrogen gas is used again to purge the chamber pipeline to thoroughly remove the particles in the chamber pipeline after the evacuation in step S224.

[0072] Therefore, after generating one or a preset number of alumina deposited layers in step S220, a particle cleaning step is performed. This particle cleaning step includes steps S222 to S226. By adding a particle cleaning step between deposited layers, the particle problem generated during the film deposition process is significantly reduced, avoiding the need for users to manually purge the chamber pipeline between wafer batches. This enables continuous wafer fabrication, saves manpower and time, and improves the production capacity of semiconductor process equipment.

[0073] Step S228: Set the number of loops; that is, set the number of loops for steps S220 and steps S222 to S226 respectively.

[0074] During the deposition of alumina films, the particle problem becomes increasingly significant as the thickness of the deposited film increases. Therefore, a particle cleaning step is inserted into the film deposition process to reduce particle issues. This requires setting the number of cycles for the first cycle (step S220) and the number of cycles for the second cycle (steps S222-S226). The number of cycles for the second cycle should not exceed the number of cycles for the first cycle. The particle cleaning step can be performed after each deposited layer, after a preset number of deposited layers, or after a film of a cumulative preset thickness. The specific settings can be determined based on the actual situation.

[0075] It should be noted that the first and second cycle counts can also be set in advance in the process formulation, so that step S220 can be directly cycled according to the first cycle count during the film growth process, and steps S222 to S226 can be cycled according to the second cycle count. During the cycle, when the insertion conditions for the particle cleaning step are met, the particle cleaning steps of steps S222 to S226 are inserted after step S220 is executed. By adding a particle cleaning step between the deposition layers, not only are particle problems generated during the film deposition process significantly reduced, but also the manual purge of the chamber pipeline by the user between wafer batches is avoided. This enables continuous wafer fabrication, saves manpower and time, and improves the capacity of semiconductor process equipment.

[0076] Step S230, the fifth purging step: After the deposition process is completed, in order to avoid the presence of residual precursors in the process chamber, the process chamber is purged by the fifth purging step (such as nitrogen).

[0077] Step S232, First evacuation step: Evacuate the process chamber to remove residual gas. For example, this step controls the opening of the butterfly valve to a specified opening, such as 40%, to avoid unstable pressure in the process chamber due to the butterfly valve being fully opened at once, thereby blowing particles generated in the process chamber or at the bottom of the process chamber during the film deposition process onto the wafer surface.

[0078] Step S234, the second evacuation step; in this step, the butterfly valve is fully open to completely remove the residual gas in the process chamber, providing a good chamber environment for the next batch of wafers to enter the process chamber for processing.

[0079] In summary, the film preparation method provided by the embodiments of the present invention, by optimizing the deposition process formulation and adding a particle cleaning step between deposition layers, not only significantly reduces the particle problem generated during the film deposition process, but also avoids the need for users to manually perform the purging of the chamber pipeline between wafer batches, thereby realizing continuous wafer fabrication, such as continuous fabrication of 25 wafers, saving manpower and time, and improving the production capacity of semiconductor process equipment.

[0080] Furthermore, embodiments of the present invention also provide a semiconductor process apparatus, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the above-described film preparation method embodiments.

[0081] The semiconductor process equipment provided in this embodiment of the invention has the same technical features as the film preparation method provided in the above embodiment, so it can also solve the same technical problems and achieve the same technical effects.

[0082] This embodiment also provides a computer-readable storage medium storing a computer program, which is executed by a processor to perform the above-described film preparation method embodiment.

[0083] The computer program product for the film preparation method and semiconductor process equipment provided in the embodiments of the present invention includes a computer-readable storage medium storing program code. The instructions included in the program code can be used to execute the methods described in the preceding method embodiments. For specific implementation, please refer to the method embodiments, which will not be repeated here.

[0084] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the system and apparatus described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0085] Furthermore, in the description of the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0086] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this invention, essentially, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0087] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0088] Finally, it should be noted that the above-described embodiments are merely specific implementations of the present invention, used to illustrate the technical solutions of the present invention, and not to limit it. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments within the technical scope disclosed in the present invention, or make equivalent substitutions for some of the technical features; and these modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for producing a film layer, characterized by, The method comprises: acquiring a substrate, and depositing a film on the substrate by using an atomic layer deposition technique; during the deposition, generating a plurality of deposition layers according to a cycle number, and forming a film layer through the plurality of deposition layers; wherein after each of the deposition layers is generated, a particle cleaning step is performed, the particle cleaning step comprising sequentially performing a first purging action, a pumping action, and a second purging action.

2. The method of claim 1, wherein, The method further comprises: when a preset number of the deposition layers is generated, performing the particle cleaning step.

3. The method of claim 1, wherein, The method further comprises: when the film layer reaches a preset thickness, performing the particle cleaning step.

4. The method of claim 1, wherein, The first purging action is used for purging a chamber pipeline with a first purging gas, the pumping action is used for pumping the chamber pipeline, and the second purging action is used for purging the chamber pipeline with a second purging gas; wherein a direction of the pumping is opposite to a direction of the purging.

5. The method of claim 4, wherein, Before the step of depositing a film on the substrate by using an atomic layer deposition technique, the method further comprises: controlling a first precursor to enter an exhaust treatment device through the chamber pipeline, and controlling a second precursor to enter a process chamber through the chamber pipeline.

6. The method of claim 5, wherein, Before the step of controlling the first precursor to enter the exhaust treatment device through the chamber pipeline, the method further comprises: controlling the process chamber to be in a vacuum environment, and controlling a pressure of the process chamber according to a preset mode.

7. The method of claim 6, wherein, The preset mode comprises an opening degree mode and a pressure control mode, and the step of controlling the pressure of the process chamber according to the preset mode comprises: adjusting an opening degree of a butterfly valve according to the opening degree mode to adjust the pressure of the process chamber until the opening degree of the butterfly valve reaches a preset opening degree; and switching to the pressure control mode, and adjusting the pressure of the process chamber according to the pressure control mode until the pressure of the process chamber reaches a preset pressure value.

8. The method of claim 5, wherein, The method further comprises: when the film layer deposition is completed, purging the process chamber.

9. A semiconductor process apparatus comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the computer program to implement the steps of the film layer preparation method in any one of claims 1-8.

10. A computer-readable storage medium, characterized in that, The computer readable storage medium stores a computer program, and the computer program is executed by the processor to perform the steps of the film layer preparation method in any one of claims 1-8.

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