High-sensitivity flexible pressure sensor

By introducing an MXene/GO composite film layer into a capacitive flexible pressure sensor, the pseudocapacitive effect is utilized to enhance the charge change, thus solving the problem of insufficient sensitivity of the capacitive flexible pressure sensor in a small pressure range and achieving high-precision pressure detection.

CN121612450APending Publication Date: 2026-03-06SHANGHAI PROSPECTIVE INNOVATION RES INST CO LTD
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Patent Information

Application Number
CN202511763602.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-11-27
Publication Date
2026-03-06

AI Technical Summary

Technical Problem

Existing capacitive flexible pressure sensors have poor sensitivity in small pressure ranges, making it difficult to meet the needs of high-precision tactile perception, especially in applications requiring fine pressure resolution.

Method used

MXene/GO composite material is used as the thin film layer, and the MXene composite material thin film layer is inserted between the gold electrode and the dielectric layer composed of cavity/ion electron thin film. By generating pseudocapacitance effect, the amount of charge change is enhanced and the electrical response sensitivity is improved.

Benefits of technology

The electrical response sensitivity of the flexible pressure sensor in a small pressure range has been improved, enhancing the detection accuracy and stability of pressure changes, making it suitable for high-precision tactile sensing.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to the technical field of sensors, in particular to a high-sensitivity flexible pressure sensor. The high-sensitivity flexible pressure sensor sequentially comprises a first substrate layer, a first electrode layer, a first thin film layer, a supporting structure layer, a second thin film layer, a second electrode layer and a second packaging layer from top to bottom, a cavity layer is formed in the supporting structure layer, and the height of the cavity layer is the same as that of the supporting structure layer. A microstructure ion electron film layer is arranged on the surface, close to the supporting structure layer, of the second film layer; the first thin film layer and / or the second thin film layer are / is made of an MXene / GO composite material. According to the flexible pressure sensor, the MXene composite material film layer is inserted between the gold electrode and the dielectric layer composed of the cavity / ion electronic film, a pseudocapacitance effect is generated, the charge variation after the flexible pressure sensor is stressed is increased, and the electric response sensitivity of the pressure sensor is improved.
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