Substrate processing apparatus and substrate processing method

Abstract

A substrate processing method includes: supplying a processing liquid onto a rotating substrate; and heating the substrate by irradiating the rotating substrate on which the liquid film of the processing liquid is formed with laser light by a laser irradiation unit, in which the substrate is divided into one or a plurality of unit irradiation regions, the laser irradiation assembly specifies any one of the one or more unit irradiation areas and irradiates the specified unit irradiation area with the laser, and synchronizes an oscillation frequency of the laser with a rotation speed of the substrate such that an irradiation position of the laser is the specified unit irradiation area.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0113251, filed with the Korean Intellectual Property Office on August 23, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a substrate processing method and a substrate processing apparatus, and particularly to a method and apparatus for processing a substrate by irradiating it with a laser. Background Technology

[0004] To manufacture semiconductor devices or liquid crystal displays, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on the substrate. Among these, etching or cleaning processes are used to remove unwanted areas from the thin film formed on the substrate. High selectivity, high etching rate, and etching uniformity are required for the thin film. Furthermore, due to the increasing integration of semiconductor devices, the requirements for etching selectivity and etching uniformity are becoming increasingly stringent.

[0005] In the process of etching a substrate, a processing liquid is supplied to the substrate to etch a thin film formed on it, and light can be used to irradiate the upper surface of the substrate on which the liquid film has been formed by the processing liquid to heat specific areas of the substrate. The entire pattern on the substrate is etched by the processing liquid, but specific areas irradiated by light may be further etched due to the heating.

[0006] In this case, a method is used to modulate light using an optical modulation element such as a digital micromirror device (DMD) to form an illumination pattern and illuminate the substrate. The degree of etching depends on the heat transferred by the light per unit time, and since the DMD can form various forms of illumination patterns, the etching of the substrate W can be controlled in various ways.

[0007] In recent years, with the advancement of substrate stacking and bonding technologies, substrate bonding requires precise dispersion control of the substrate. However, in substrate polishing processes (such as CMP), although the front side of the substrate can be finely polished, there is a problem that selective polishing of localized areas of the substrate is not possible. Furthermore, a method for selectively and locally heating the substrate W by irradiating certain areas of the substrate with light in a stopped state has been disclosed. However, when light is emitted onto the substrate in a stopped state, it is impossible to heat the substrate simultaneously with processes involving substrate rotation, thus resulting in reduced process efficiency. Summary of the Invention

[0008] This invention aims to provide a substrate processing method and a substrate processing apparatus that can effectively process substrates.

[0009] The present invention also aims to provide a substrate processing method and substrate processing apparatus capable of controlling local etching dispersion in asymmetric regions.

[0010] The present invention also aims to provide a substrate processing method and a substrate processing apparatus capable of adjusting the shape or distribution of a laser irradiating a substrate to a desired shape or distribution.

[0011] The present invention aims to provide a substrate processing method and a substrate processing apparatus capable of performing precise heating on a rotating substrate.

[0012] The purpose of this disclosure is not limited thereto, and other purposes not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0013] An exemplary embodiment of the present invention provides a substrate processing method, comprising: supplying a processing liquid to a rotating substrate; and heating the substrate by irradiating the rotating substrate on which a liquid film of the processing liquid is formed by a laser with a laser irradiation assembly, wherein the substrate is divided into one or more unit irradiation areas, the laser irradiation assembly designates any one of the one or more unit irradiation areas and irradiates the designated unit irradiation area with a laser, and the oscillation frequency of the laser is synchronized with the rotation speed of the substrate, such that the irradiation position of the laser can be the designated unit irradiation area.

[0014] According to an exemplary embodiment of the present invention, the laser irradiation assembly modulates the laser by an optical modulation unit and then irradiates a designated unit irradiation area on a rotating substrate.

[0015] According to an exemplary embodiment of the present invention, the optical modulation unit obtains a desired heating amount distribution map within a specified unit irradiation area based on the substrate surface profile for the specified unit irradiation area, and can modulate the laser to correspond to the desired heating amount distribution map.

[0016] According to an exemplary embodiment of the present invention, the optical modulation unit is a digital micromirror device (DMD) unit, and the DMD unit includes a plurality of micromirrors provided as rotatable, and the modulation of the laser can be performed by adjusting the direction of the laser reflected by each of the plurality of micromirrors and selectively switching between an on state and an off state, wherein the on state is a state in which the laser is reflected to irradiate the substrate, and the off state is a state in which the laser is cut off.

[0017] According to an exemplary embodiment of the present invention, when heat treatment of a designated unit irradiation area is completed by irradiating the designated unit irradiation area with a laser, the target area to be irradiated by the laser is changed from the designated unit irradiation area to another unit irradiation area, and the laser can be modulated and irradiated to the other unit irradiation area.

[0018] According to an exemplary embodiment of the present invention, when the target area to be irradiated by the laser changes from a specified unit irradiation area to another unit irradiation area, a laser delay can be imposed.

[0019] According to an exemplary embodiment of the present invention, the delay can vary depending on the area of ​​the unit irradiation area or the rotation speed of the substrate.

[0020] According to an exemplary embodiment of the present invention, the substrate can be etched by sequentially modulating a laser and irradiating one or more unit irradiation areas with the modulated laser, thereby irradiating the entire area of ​​the substrate that needs to be heated with the modulated laser.

[0021] According to an exemplary embodiment of the present invention, one or more unit irradiation areas may be formed in a fan shape.

[0022] According to an exemplary embodiment of the present invention, one or more unit irradiation areas may be formed to have the same area as each other.

[0023] According to an exemplary embodiment of the present invention, the plurality of laser irradiation components include a plurality of laser irradiation modules that emit lasers, the plurality of laser irradiation modules simultaneously irradiate different areas of the substrate with lasers, and the areas irradiated by the plurality of laser irradiation modules can be combined to form a unit irradiation area.

[0024] According to an exemplary embodiment of the present invention, the laser can be output in the form of pulses.

[0025] An exemplary embodiment of the present invention provides a substrate processing apparatus, comprising: a support unit for supporting a substrate; a liquid supply unit for supplying processing liquid to the substrate supported by the support unit; a laser irradiation assembly for irradiating the substrate supported by the support unit with a laser; and a controller for controlling the laser irradiation assembly, wherein the laser irradiation assembly includes: a laser source for generating laser light; and a plurality of laser irradiation modules for emitting laser light, and the substrate is divided into one or more unit irradiation areas, and the controller controls the laser irradiation assembly to irradiate a specified unit irradiation area within one or more unit irradiation areas of the rotating substrate with a laser, and synchronizes the oscillation frequency of the laser with the rotation speed of the substrate, such that the irradiation position of the laser can be the specified unit irradiation area.

[0026] According to an exemplary embodiment of the present invention, the laser irradiation module includes a digital micromirror device (DMD) unit, which is an optical modulation unit that modulates laser light generated by a laser source, and the DMD unit includes: a plurality of micromirrors provided to be rotatable; and a substrate on which the micromirrors are mounted, and a controller can control the laser irradiation module to modulate the laser light by adjusting the direction of laser light reflected by each of the micromirrors.

[0027] According to an exemplary embodiment of the present invention, the laser irradiation assembly may further include a measuring component that detects the surface state of the substrate in real time.

[0028] According to an exemplary embodiment of the present invention, each of the plurality of laser irradiation modules is configured to irradiate different regions of the substrate with a laser, and the regions irradiated by the plurality of laser irradiation modules can be combined to form a unit irradiation region.

[0029] An exemplary embodiment of the present invention provides a substrate processing method, comprising: supplying a processing liquid to a rotating substrate; and irradiating the rotating substrate on which a liquid film of the processing liquid is formed by a laser with a laser irradiation assembly to heat the substrate, wherein the substrate is divided into a plurality of unit irradiation regions, and the laser irradiation assembly modulates the laser using a digital micromirror device (DMD) unit, and subsequently designates one unit irradiation region among the plurality of unit irradiation regions and irradiates the designated unit irradiation region with the laser, and synchronizing the oscillation frequency of the laser with the rotation speed of the substrate, such that the irradiation position of the laser can be the designated unit irradiation region.

[0030] According to an exemplary embodiment of the present invention, the DMD unit obtains a desired heating amount distribution map within a specified unit irradiation area based on the substrate surface profile for the specified unit irradiation area, and can modulate the laser to correspond to the desired heating amount distribution map.

[0031] According to an exemplary embodiment of the present invention, when heat treatment of a designated unit irradiation area is completed by irradiating the designated unit irradiation area with a laser, the target area to be irradiated by the laser is changed from the designated unit irradiation area to another unit irradiation area, and the laser is modulated and irradiated into another unit irradiation area. By sequentially modulating the laser and irradiating one or more unit irradiation areas with the modulated laser, the entire area of ​​the substrate to be heated can be etched by irradiating the substrate with the modulated laser.

[0032] According to an exemplary embodiment of the present invention, each of the plurality of unit irradiation regions may be formed in a fan shape.

[0033] According to an exemplary embodiment of the present invention, the substrate can be processed efficiently.

[0034] Furthermore, according to an exemplary embodiment of the present invention, local etching dispersion in asymmetric regions can be controlled.

[0035] Furthermore, according to exemplary embodiments of the present invention, the shape or distribution of the laser irradiating the substrate can be adjusted to the desired shape or distribution.

[0036] According to an exemplary embodiment of the present invention, precise heating can be performed on a rotating substrate.

[0037] The effects of this disclosure are not limited to those described above, and those skilled in the art will clearly understand from the specification and drawings any effects not mentioned above. Attached Figure Description

[0038] Figure 1 This is a top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0039] Figure 2 It is shown schematically. Figure 1 A schematic diagram of the liquid handling chamber.

[0040] Figure 3 It is shown Figure 2 A schematic diagram of the state of a laser irradiation component that irradiates a substrate with a laser.

[0041] Figure 4 It is shown schematically. Figure 3 A schematic diagram of the configuration of the laser irradiation module.

[0042] Figure 5 It is a graph showing the distribution of light output from the laser source, and Figure 6 It is a graph showing the distribution of light passing through the beam shaper.

[0043] Figure 7 This is a schematic diagram representing an optical modulation element.

[0044] Figure 8 This is a schematic diagram showing the state when light is output from the optical modulation element.

[0045] Figure 9 This is a schematic diagram showing the state of light output from an optical modulation element when it is removed by an optical dumper.

[0046] Figure 10 This is a schematic diagram illustrating the principle of removing light through a light cutoff.

[0047] Figure 11It is a schematic diagram used to illustrate the illumination pattern of the light output from the light modulation unit.

[0048] Figure 12 This is an example diagram illustrating a substrate processing method according to an exemplary embodiment of the present invention.

[0049] Figure 13 It schematically illustrates the execution Figure 12 A schematic diagram of the liquid handling chamber during the liquid supply process.

[0050] Figure 14 This is a schematic diagram of a liquid handling chamber when a substrate is irradiated with a laser using a laser irradiation assembly.

[0051] Figure 15 This is a schematic diagram showing the surface contour of the substrate and a unit irradiation area on the substrate.

[0052] Figures 16 to 18 This is a schematic diagram illustrating the process of irradiating the first irradiation area of ​​a substrate supported and rotated by a support unit with a laser.

[0053] Figure 19 This is a schematic diagram illustrating the change in intensity of a laser irradiating a first irradiation area over time according to an exemplary embodiment of the present invention.

[0054] Figure 20 This is a schematic diagram showing the state when the second irradiation area of ​​the substrate is irradiated with a laser.

[0055] Figure 21 This is a schematic diagram illustrating the change in intensity of a laser irradiating a second irradiation area over time according to an exemplary embodiment of the present invention.

[0056] Figure 22 This is a schematic diagram showing the state when the Nth irradiated area of ​​the substrate is irradiated by a laser.

[0057] Various features and advantages of the non-limiting exemplary embodiments of this specification will become apparent upon reading the detailed description in conjunction with the accompanying drawings. The drawings are for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless explicitly stated otherwise, the drawings should not be considered as drawn to scale. Various dimensions in the drawings may be exaggerated for clarity. Detailed Implementation

[0058] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. The exemplary embodiments provided will make this disclosure thorough and will fully convey the scope to those skilled in the art. Numerous specific details (such as examples of specific components, apparatuses, and methods) are set forth to provide a thorough understanding of embodiments of this disclosure. It will be apparent to those skilled in the art that specific details are not required, exemplary embodiments may be embodied in many different forms, and specific details should not be construed as limiting the scope of this disclosure. In some exemplary embodiments, well-known processes, well-known apparatus structures, and well-known technologies have not been described in detail.

[0059] The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a” and “the” may be intended to include the plural forms. The terms “comprises”, “comprising,” “including,” and “having” are inclusive and therefore specifically refer to the presence of the feature, ingredients, step, operation, element, and / or component, but do not exclude the presence or addition of one or more other features, ingredients, steps, operations, elements, components, and / or combinations thereof. Unless explicitly identified as the order of execution, the method steps, processes, and operations described herein should not be construed as necessarily having to be performed in the specific order discussed or illustrated. It should also be understood that additional or alternative steps may be employed.

[0060] When an element or layer is referred to as “on another element or layer,” “attached to another element or layer,” “connected to another element or layer,” or “coupled to another element or layer,” the element or layer may be directly on, directly attached to, directly connected to, or directly coupled to the other element or layer, or there may be intermediate elements or layers present. Conversely, when an element is referred to as “directly on another element or layer,” “directly attached to another element or layer,” “directly connected to,” or “directly coupled to another element or layer,” there may be no intermediate elements or layers. Other terms used to describe relationships between elements should be interpreted similarly (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0061] Although the terms first, second, third, etc., may be used herein to describe different elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms unless otherwise stated. These terms may be used only to distinguish one element, component, region, layer, and / or segment from another. When used herein, terms such as “first,” “second,” and other numerical terms do not imply order or sequence unless the context clearly indicates otherwise. Therefore, without departing from the teachings of the exemplary embodiments, the first element, first component, first region, first layer, or first segment discussed below may be referred to as a second element, second component, second region, second layer, or second segment.

[0062] For ease of description, spatially relative terms such as “inside,” “outside,” “below,” “below,” “above,” and “above” are used herein to describe the relationship of an element or feature to another element or feature, as illustrated in the figures. Spatially relative terms may be intended to cover different orientations of the device in use or operation, other than those described in the figures. For example, if the device in the figures is flipped, an element described as “below” or “below” other elements or features would subsequently be oriented “above” other elements or features. Thus, the example term “below” can cover both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or oriented in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0063] When the terms “same” or “identical” are used in the description of the example embodiments, it should be understood that some imprecision may exist. Therefore, when an element or value is said to be the same as another element or value, it should be understood that the element or value is the same as the other element or value within a range of manufacturing or operational tolerances (e.g., ±10%).

[0064] When the terms “approximately” or “substantially” are used with numerical values, it should be understood that the associated numerical value includes manufacturing or operational tolerances (e.g., ±10%) around the value. Furthermore, when the terms “generally” and “substantially” are used in connection with geometry, it should be understood that precision of the geometry is not required, but permissible deviations (latitudes) of the shape are within the scope of this disclosure.

[0065] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. It should also be understood that terms (including those defined in common dictionaries) should be interpreted as having the meaning consistent with their meaning in the context of the relevant field, and should not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0066] In this exemplary embodiment, a process using liquid processing and laser etching of a substrate will be described as an example. However, this exemplary embodiment is not limited to etching processes, but can be applied to various substrate processing processes using liquids, such as cleaning processes, ashing processes, and developing processes.

[0067] In the following text, reference will be made to Figures 1 to 22 The exemplary embodiments of the present invention will be described below.

[0068] Figure 1 This is a top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention. (Reference) Figure 1 The substrate processing apparatus 1 includes an indexing module 10, a process processing module 20, and a controller 30. The indexing module 10 includes a loading port 120 and a transfer frame 140. The loading port 120, the transfer frame 140, and the process processing module 20 are arranged sequentially in a row. Hereinafter, the direction in which the loading port 120, the transfer frame 140, and the process processing module 20 are arranged is referred to as a first direction 12, the direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0069] A carrier 130, which houses the substrate W, is placed on a loading port 120. Multiple loading ports 120 are provided and arranged in a row along a second direction 14. The number of loading ports 120 can be increased or decreased depending on the processing efficiency and floor space requirements of the process module 20. Multiple slots (not shown) can be formed in the carrier 130 to accommodate the substrate W in a horizontally arranged position relative to the ground. A front-opening unified pod (FOUP) can be used as the carrier 130.

[0070] The process module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260. The longitudinal direction of the transfer chamber 240 can be configured to be parallel to the first direction 12. The process chambers 260 are respectively disposed on opposite sides of the transfer chamber 240. On one side and the other side of the transfer chamber 240, the process chambers 260 can be configured to be symmetrical about the transfer chamber 240. Multiple process chambers 260 are disposed on one side of the transfer chamber 240. Some of the process chambers 260 are disposed along the longitudinal direction of the transfer chamber 240. In addition, some of the process chambers 260 are arranged to be stacked on top of each other. That is, the process chambers 260 can be disposed on one side of the transfer chamber 240 in an A×B arrangement. Here, "A" is the number of process chambers 260 arranged in a row along the first direction 12, and "B" is the number of process chambers 260 arranged in a row along the third direction 16. When four or six process chambers 260 are provided on one side of the transfer chamber 240, the process chambers 260 can be arranged in a 2×2 or 3×2 configuration. The number of process chambers 260 can be increased or decreased. Unlike the above description, the process chambers 260 can be provided only on one side of the transfer chamber 240. Alternatively, the process chambers 260 can be provided as a single layer on one or both sides of the transfer chamber 240.

[0071] A buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides space for the substrate W to remain before it is transferred between the transfer chamber 240 and the transfer frame 140. A slot (not shown) for placing the substrate W is disposed in the buffer unit 220. Multiple slots (not shown) are spaced apart from each other along a third direction 16. The buffer unit 220 has an open surface facing the transfer frame 140 and an open surface facing the transfer chamber 240.

[0072] A transfer frame 140 transfers substrate W between a carrier 130 located at loading port 120 and a buffer unit 220. An index track 142 and an indexing robot 144 are disposed within the transfer frame 140. The index track 142 is configured to have a longitudinal direction parallel to a second direction 14. The indexing robot 144 is mounted on the index track 142 and moves linearly along the index track 142 in the second direction 14. The indexing robot 144 has a base 144a, a body 144b, and an indexing arm 144c. The base 144a is mounted to be movable along the index track 142. The body 144b is coupled to the base 144a. The body 144b is configured to be movable along a third direction 16 on the base 144a. Furthermore, the body 144b is configured to be rotatable on the base 144a. The indexing arm 144c is coupled to the body 144b and is configured to be able to move forward and backward about the body 144b. Multiple index arms 144c are configured to be driven individually. The index arms 144c are arranged to stack spaced apart from each other along a third direction 16. A portion of the index arms 144c can be used to transfer the substrate W from the process module 20 to the carrier 130, and another portion of the index arms 144c can be used to transfer the substrate W from the carrier 130 to the process module 20. This prevents particles generated from the substrate W before processing from adhering to the substrate W after processing during the loading and unloading of the substrate W by the indexing robot 144.

[0073] The transfer chamber 240 transfers substrate W between the buffer unit 220 and the process chamber 260, and between these process chambers 260. A guide rail 242 and a main robot 244 are disposed in the transfer chamber 240. The guide rail 242 is arranged such that its longitudinal direction is parallel to a first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly along the guide rail 242 along the first direction 12. The main robot 244 includes a base 244a, a body 244b, and a main arm 244c. The base 244a is mounted to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is configured to be movable along a third direction 16 on the base 244a. Furthermore, the body 244b is configured to be rotatable on the base 244a. A main arm 244c is coupled to a body 244b and is configured to move forward and backward with respect to the body 244b. Multiple index arms 144c are configured to be driven individually. The index arms 244c are configured to stack spaced apart from each other along a third direction 16.

[0074] A process chamber 260 is disposed in a liquid processing chamber 300, which rotates the substrate W in a horizontal position and supplies processing liquid to the rotating substrate W to process the substrate W.

[0075] The controller 30 can control the components of the substrate processing apparatus 1. The controller 30 may include: a process controller, which is composed of a microprocessor (computer) that performs control of the substrate processing apparatus; a user interface, which is composed of a keyboard, on which an operator performs command input operations to manage the substrate processing apparatus; a display for visualizing and displaying the operating status of the substrate processing apparatus; and a storage unit that stores control programs for executing processes performed in the substrate processing apparatus under the control of the process controller, or stores programs (i.e., processing schemes) for executing processes in various components according to various data and processing conditions. Further, the user interface and the storage unit can be connected to the process controller. The process scheme can be stored in a storage medium in the storage unit, and this storage medium can be a hard disk, a portable hard disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0076] The controller 30 can control the substrate processing apparatus 1 to perform the substrate processing method described below. For example, the controller 30 can control the components disposed in the liquid processing chamber 300 to perform the substrate processing method described below.

[0077] Figure 2 For illustrative purposes only Figure 1 A schematic diagram of an embodiment of a liquid handling chamber.

[0078] refer to Figure 2 The liquid processing chamber 300 includes a housing 310, a cup-shaped component 320, a support unit 340, a lifting unit 360, a liquid supply unit 380, and a laser irradiation assembly 400.

[0079] The housing 310 has a processing space 312 therein. The housing 310 may have a cylindrical shape with a space therein. A cup-shaped member 320, a support unit 340, a lifting unit 360, a liquid supply unit 380, and a laser irradiation assembly 400 may be disposed in the processing space 312 of the housing 310. When viewed from a front section, the housing 310 may have a rectangular shape. However, the invention is not limited thereto, and the housing 310 may be modified to have various shapes that can have the processing space 312.

[0080] The cup-shaped component 320 has a cylindrical shape with an open top. The cup-shaped component 320 has an inner recovery container 322 and an outer recovery container 326. Each of the recovery containers 322 and 326 recovers a different processing liquid from the processing liquid used in the process. The inner recovery container 322 is configured in an annular shape around the support unit 440 of the substrate W, and the outer recovery container 326 is configured in an annular shape around the inner recovery container 322. The internal space 322a of the inner recovery container 322 and the inner recovery container 322 itself act as a first inlet 322a through which the processing liquid is introduced into the inner recovery container 322. The space 326a between the inner recovery container 322 and the outer recovery container 326 acts as a second inlet 326a through which the processing liquid is introduced into the outer recovery container 326. According to an embodiment, inlets 322a and 326a can each be positioned at different heights. Recovery lines 322b and 326b are respectively connected below the bottom surfaces of the recovery containers 322 and 326. The treated liquid introduced into the recovery containers 322 and 326 can be provided to an external treated liquid circulation system (not shown) via recovery lines 322b and 326b, respectively, for reuse.

[0081] Support unit 340 supports substrate W in processing space 312. Support unit 340 supports and rotates substrate W during the process. Support unit 340 includes support plate 342, support pin 344, chuck pin 346, and rotation drive member.

[0082] The support plate 342 is configured as a generally circular plate and has an upper surface and a lower surface. The lower surface has a smaller diameter than the upper surface. That is, the support plate 342 can have a shape with a wide upper surface and a narrow lower surface. The upper and lower surfaces are positioned such that their central axes coincide with each other.

[0083] Multiple support pins 344 are provided. The support pins 344 are disposed on the edge of the upper surface of the support plate 342, thus spaced apart from each other at predetermined intervals, and protrude upward from the support plate 342. The support pins 344 are arranged to have an annular shape formed integrally by combining them. The support pins 344 can support the rear edge of the substrate W, such that the substrate W is spaced apart from the upper surface of the support plate 342 at a predetermined distance.

[0084] Multiple chuck pins 346 are provided. The chuck pins 346 are positioned further away from the center of the support plate 342 than the support pins 344. The chuck pins 346 are configured to project upwards from the upper surface of the support plate 342. The chuck pins 346 support the sides of the substrate W such that the substrate W does not separate from its normal position in the lateral direction when the support plate 342 rotates. The chuck pins 346 are configured to move linearly between an outer position and an inner position in the radial direction of the support plate 342. The outer position is a position further away from the center of the support plate 342 than the inner position. When the substrate W is loaded onto or unloaded from the support plate 342, the chuck pins 346 are positioned at the outer position, and when a process is performed on the substrate W, the chuck pins 346 are positioned at the inner position. The inner position is the position where the chuck pins 346 and the sides of the substrate W are in contact with each other, and the outer position is the position where the chuck pins 346 and the substrate W are separated from each other.

[0085] A rotary drive component rotates a support plate 342. The support plate 342 can be rotated about a magnetic central axis by the rotary drive component. The rotary drive component includes a support shaft 348 and a drive unit 349. The support shaft 348 has a cylindrical shape. The upper end of the support shaft 348 is fixedly coupled to the bottom surface of the support plate 342. According to an embodiment, the support shaft 348 can be fixedly coupled to the center of the bottom surface of the support plate 342. The drive unit 349 provides a driving force to rotate the support shaft 348. The support shaft 348 is rotated by the drive unit 349, and the support plate 342 rotates together with the support shaft 348.

[0086] The lifting unit 360 linearly moves the cup-shaped member 320 in the vertical direction. As the cup-shaped member 320 moves up and down, its relative height to the support plate 342 changes. When the substrate W is loaded onto or unloaded from the support plate 342, the lifting unit 360 lowers the cup-shaped member 320, causing the support plate 342 to protrude upwards from the cup-shaped member 320. Additionally, during the process, the height of the cup-shaped member 320 is adjusted so that the processing liquid supplied to the substrate W is introduced into predetermined recovery containers 322 and 326 according to the type of processing liquid supplied. The lifting unit 360 includes a support 362, a moving shaft 364, and a driver 366. The support 362 is fixedly mounted on the outer wall of the cup-shaped member 320 and is fixedly coupled to the moving shaft 364, which moves in the vertical direction via the driver 366. Optionally, the lifting unit 360 can move the support plate 342 in the vertical direction.

[0087] The liquid supply unit 380 can supply processing liquid to the substrate W. The liquid supply unit 380 may include a moving member 381 and a nozzle 389. The liquid supply unit 380 can pump and deliver the processing liquid stored in a storage tank (not shown), and discharge the processing liquid to the substrate W through the nozzle 389. The processing liquid may be an organic solvent, a chemical, or a rinsing liquid. The organic solvent may be isopropanol (IPA) liquid.

[0088] The processing liquid supplied from the liquid supply unit 380 to the substrate W can vary depending on the substrate processing process. For example, when the substrate processing process is a silicon nitride film etching process, the processing liquid can be a chemical including phosphoric acid (H3PO4).

[0089] The liquid supply unit 380 may further include a flushing liquid R supply nozzle for rinsing the substrate surface after the etching process, an isopropanol discharge nozzle, and a nitrogen (N2) discharge nozzle for performing a drying process after rinsing. The flushing liquid may be pure water (DIW). Although Figure 2 Only one nozzle 389 is shown in the figure. The number of nozzles 389 can be set to correspond to the number of types of liquids being discharged.

[0090] The moving member 381 moves the nozzle 389 to a process position and a standby position. The process position is the location of the nozzle 389 relative to the substrate W supported by the support unit 340. According to an example, the process position is the location where processing liquid is discharged onto the upper surface of the substrate W. Additionally, the process position includes a first supply position and a second supply position. The first supply position may be a position closer to the center of the substrate W than the second supply position, and the second supply position may be a position encompassing an end of the substrate W. Optionally, the second supply position may be a region adjacent to the end of the substrate W. The standby position is defined as the position where the nozzle 389 leaves the process position. According to an example, the standby position may be a position where the nozzle 389 waits before or after the process is completed on the substrate W.

[0091] The moving member 381 includes an arm 382, ​​a support shaft 383, and a driver 384. The support shaft 383 can be positioned on one side of the cup-shaped member 320. The support shaft 383 has a rod shape, with its longitudinal direction facing a third direction. The support shaft 383 is configured to be rotatable via the driver 384. The support shaft 383 is configured to be movable upward and downward. The arm 382 is coupled to the upper end of the support shaft 383. The arm 382 extends vertically from the support shaft 383. A nozzle 389 is coupled to the end of the arm 382. As the support shaft 383 rotates, the nozzle 389 can swing together with the arm 382. The nozzle 389 can be swung to a process position and a standby position. Optionally, the arm 382 can be configured to move forward and backward in its longitudinal direction. When viewed from above, the path through which the nozzle 389 moves can be aligned with the central axis of the substrate W at the process position.

[0092] The laser irradiation component 400 can be used to irradiate the substrate W with a laser.

[0093] Figure 3 It shows Figure 2 A schematic diagram showing the state of a laser irradiation assembly that uses a laser beam to irradiate a substrate. (Reference) Figure 2 and Figure 3 The laser irradiation assembly 400 can heat the substrate W by irradiating it with a laser. The substrate has a liquid film formed on its surface by a processing liquid (e.g., etching liquid) supplied by the liquid supply unit 380. The temperature of the area of ​​the substrate W irradiated by the laser L emitted by the laser irradiation assembly 400 may rise. Therefore, relatively more etching can be performed in the area irradiated by the laser L, and relatively less etching can be performed in the area not irradiated by the laser L.

[0094] The laser irradiation assembly 400 includes a laser source 410, a laser transmission component 420, and multiple laser irradiation modules 500.

[0095] Laser source 410 can generate laser L. Laser source 410 can generate laser L with linearity. Laser L generated by laser source 410 can irradiate substrate W to heat substrate W. Laser source 410 can be a laser beam, fiber laser, or laser diode, etc. Laser source 410 can generate laser L, and its output can correctly drive optical modulation unit 540 without causing damage.

[0096] The laser transmission component 420 transmits the laser L generated by the laser source 410 to the laser irradiation module 500. According to the example, the laser transmission component 420 may be an optical fiber.

[0097] The laser irradiation assembly 400 can be fixedly mounted inside the liquid processing chamber 300. Hereinafter, the invention will be described as an example where the laser irradiation assembly 400 is fixedly mounted above a support unit 340 within the liquid processing chamber 300 and is provided for irradiating a substrate W supported by the support unit 340 with a laser L. However, unlike this, a drive unit (not shown) that is movable between the position where the laser L irradiates the substrate W supported by the support unit 340 and a standby position may also be included.

[0098] Figure 4 It is shown schematically. Figure 3 A schematic diagram of the configuration of the laser irradiation module.

[0099] The laser irradiation module 500 includes a mirror 510, a beam shaper 520, an optical instrument 530, a light modulation unit 540, an imaging unit 550, and a measuring component 560.

[0100] Mirror 510 reflects the laser L incident on the laser irradiation module 500 via the laser transmission member 420 and transmits the reflected laser L to the beam shaper 520. Mirror 510 may include multiple mirrors for appropriately reflecting the path of the laser L. For example, mirror 510 may include a first mirror 512 and a second mirror 514.

[0101] The beam shaper 520 can convert the form of light output from the laser source 410.

[0102] Figure 5 It is a graph showing the distribution of light output from the laser source, and Figure 6 It is a graph showing the distribution of light passing through the beam shaper.

[0103] refer to Figures 4 to 6 The laser L output by laser source 410 can have a Gaussian form, wherein the intensity distribution has the following characteristics: Figure 6 The Gaussian distribution is shown. More specifically, the intensity of the laser L output by laser source 410 is greater at the center of laser L, and its intensity gradually decreases as laser L moves away from the center (see...). Figure 5 Therefore, when the substrate W is irradiated by the laser L output from the laser source 410, the region near the center of the laser L is further heated, while the region near the edge of the laser L is heated less. Consequently, when the laser L is transmitted to the optical modulation element 542, which will be described later, excessive light is transmitted to the portion of the optical modulation element 542 corresponding to the center of the laser L, causing damage to the optical modulation element 542. Conversely, insufficient light is transmitted to the portion of the optical modulation element 542 corresponding to the edge of the laser L, potentially reducing the optical modulation efficiency of the optical modulation element 542.

[0104] Therefore, in the laser irradiation module 500 according to an exemplary embodiment of the present invention, the beam shaper 520 can be disposed on the travel path of the laser L output from the laser source 410. The beam shaper 520 can convert the Gaussian laser L output from the laser source 410 into a flat-top laser L. The laser L output from the laser source 410 can be converted by the beam shaper 520 into a flat-top form with a relatively uniform intensity (luminosity) distribution (see...). Figure 6 Since the flat-top laser L is modulated by the optical modulation element 452, the utilization rate and optical modulation efficiency of the optical modulation element 452 can be improved.

[0105] review Figure 4 The laser L passing through the beam shaper 520 can be transmitted to the optical instrument 530.

[0106] Optical instrument 530 can reflect the laser L that has passed through beam shaper 520 back to optical modulation unit 540. Optical instrument 530 can be a prism or a mirror. Optical instrument 540 can be configured to transmit the laser L reflected by first mirror 512 to optical modulation unit 540. The laser L transmitted to optical modulation unit 540 can be modulated and output by optical modulation unit 540. The laser L modulated and output by optical modulation unit 540 can pass through optical instrument 530 and be transmitted to imaging unit 550.

[0107] The optical modulation unit 540 can modulate the transmitted laser L. The optical modulation unit 540 may include an optical modulation element 542, an optical cutoff 544, and a cooling device 546.

[0108] The optical modulation element 542 can modulate the distribution of the laser L generated by the laser source 410. Here, the modulated distribution of the laser L can be a distribution of laser L that forms an irradiation pattern corresponding to the laser L, so as to irradiate the substrate W.

[0109] The optical modulation element 542 can be a digital micromirror device (DMD).

[0110] In other words, the optical modulation unit 540 can be a DMD unit that includes a DMD.

[0111] Figure 7 This is a schematic diagram illustrating an optical modulation element. (Reference) Figure 7The optical modulation element 542 may include a substrate SB and a plurality of micromirrors MI. Multiple electrodes corresponding to the micromirrors MI may be mounted on the substrate SB. The controller 30 may transmit digital signals "0" or "1" to the electrodes mounted on the substrate SB. The micromirrors MI may be rotatably configured. Each micromirror MI may be configured to rotate relative to a first direction X, a second direction Y, or a direction parallel to a plane passing through the first and second directions Y as a rotation axis. Micromirrors MI corresponding to electrodes that have transmitted digital signals "0" may be in a closed state, while micromirrors MI corresponding to electrodes that have transmitted digital signals "1" may be in an open state. Micromirrors MI in the open state can irradiate the substrate W with laser light L, while laser light L reflected from micromirrors MI in the closed state will not irradiate the substrate W.

[0112] Figure 8 This is a schematic diagram illustrating the state when light is output from the optical modulation element. For ease of description, Figure 8 The propagation path of light reflected by any one of the multiple micromirrors (MI) is shown. (Reference) Figure 4 , Figure 7 and Figure 8 The laser L reflected by the micromirror MI in the open state can be output through the imaging unit 550, which will be described later, and transmitted to the substrate W.

[0113] Figure 9 This is a schematic diagram illustrating the state of light output from the optical modulation element as it is removed by the optical cutoff. For ease of description, Figure 9 The travel path of laser L reflected by any of a plurality of micromirrors MI is shown. (Reference) Figure 4 , Figure 7 and Figure 9 When in the closed state, the micromirror MI reflects the laser L and does not transmit the laser L to the substrate W. Specifically, the micromirror MI is configured to be rotatable as described above. The closed micromirror MI can rotate to change the travel path of the laser L transmitted by the laser source 410, so that the light does not transmit to the substrate W. The laser L emitted from the closed micromirror MI will not pass through the second hole 554b of the light cutoff 544 (described later) and may be eliminated by irradiating the inner surface of the light cutoff 544.

[0114] Figure 10 This is a schematic diagram illustrating the principle of removing light using an optical cutoff. (Reference) Figure 4 and Figure 10The optical cutoff 544 can be a cylindrical shape with an internal space. The optical cutoff 544 can be made of a material such as synthetic resin that can absorb and remove laser light L. The optical instrument 530 can be disposed within the internal space of the optical cutoff 544. The optical modulation element 542 can be disposed within the internal space of the optical cutoff 544, or it can be mounted externally to the optical cutoff 544.

[0115] The optical cutoff 544 may have a first hole 544a and a second hole 554b. The first hole 544a may be formed on the side of the optical cutoff 544. The first hole 544a may be a hole through which laser L generated by laser source 410 and converted by beam shaper 520 passes. The second hole 554b may be a hole through which laser L modulated by optical modulation element 542 passes. The second hole 554b may be formed on the lower part of the optical cutoff 544.

[0116] A groove G can be formed on the inner surface 554c of the optical cutoff 544. The groove G formed on the inner surface 554c of the optical cutoff 461 can be configured to absorb light reflected by the micromirror MI in the off state. Specifically, when the laser L is transmitted to the groove G, the laser L may be removed after being reflected multiple times in the groove G. The laser L may be removed after being reflected multiple times in the groove G and losing thermal energy to the optical cutoff 544. Although Figure 4 and Figure 10 The diagram shows that the groove G is formed only on the lower part of the light cutoff 544, but the invention is not limited thereto. The groove G can be formed above the entire inner surface 554c of the light cutoff 544.

[0117] review Figure 4 As the laser L is removed from the optical cutoff 544, the temperature of the optical cutoff 544 may rise. Therefore, the optical modulation unit 540 according to an exemplary embodiment of the present invention may include a cooling device 546 for cooling the optical cutoff 544. The cooling device 546 may be a fan that forms an airflow for cooling the optical cutoff 544.

[0118] The imaging unit 550 can irradiate the substrate W with the laser L, which has been modulated and output by the light modulation unit 540 and passed through the optical instrument 530, by adjusting the laser L to correspond to the area to be irradiated. The imaging unit 550 includes a plurality of lenses that can adjust the size of the laser L, and the contour of the laser L irradiating the substrate W can be adjusted by enlarging or reducing the diameter of the laser L.

[0119] Imaging unit 550 may include a configuration for removing noise patterns from the diffraction pattern output by optical modulation unit 540. For example, imaging unit 550 may include a spatial filter.

[0120] The imaging unit 550 includes an illumination lens 552. The laser L, which is modulated and output by the light modulation unit 540 and passes through the optical instrument 530, is adjusted by the imaging unit 550 and then illuminates the substrate W through the illumination lens 552.

[0121] Although not shown as an exemplary embodiment, the irradiation lens 552 may include a plurality of lenses and may be configured to change the relative distance between the plurality of lenses forming the irradiation lens 552, thereby adjusting the area irradiated by the laser L.

[0122] The measuring member 560 measures the state of the substrate W in real time. The measuring member 560 can be attached to and mounted on one side of the laser irradiation module 500. Alternatively, the measuring member 560 can be disposed to the laser irradiation assembly 400, or can be fixedly mounted in the liquid processing chamber 300. The state of the substrate W measured by the measuring member 560 can represent the state of the surface of the substrate W or data on the amount of etching required for each area of ​​the substrate W. The measuring member 560 may include a sensor for optically measuring distance. According to an example, the measuring member 560 may include a color confocal sensor. The measuring member 560 can measure the distance from the measuring member 560 to the surface of the substrate W in real time, and can scan and / or analyze the surface of the substrate W to represent the scanned and / or analyzed surface of the substrate W as a 2D distribution profile.

[0123] Figure 11 This is a schematic diagram illustrating the illumination pattern of light output from the optical modulation unit. (Reference) Figure 4 , Figure 7 and Figure 11 As described above, the micromirror unit (MI) can switch between an on and off state. The switching between the on and off states of each micromirror MI can be completed in a very short time. Based on the switching between the on and off states of each micromirror MI, the optical modulation unit 540 can form a variety of illumination patterns (HP). For example, Figure 11 The diagram illustrates the amount of heat transferred to the substrate W per unit time per unit time (e.g., 1 second) by the laser L reflected from each micromirror MI. The irradiation pattern HP may include multiple patterns P corresponding to the multiple micromirrors MI, respectively. To increase the amount of heat transferred to the substrate W per unit time in each micromirror MI, the on-state of the micromirror MI can be maintained for a longer period and the off-state for a shorter period. To reduce the amount of heat transferred to the substrate W per unit time in each micromirror MI, the on-state of the micromirror MI can be maintained for a shorter period and the off-state for a longer period.

[0124] review Figure 3The laser L, modulated in the optical modulation unit 540 of the laser irradiation module 500 and adjusted in the imaging unit 550, is emitted onto the substrate W. In this case, the substrate W can be divided into one or more unit irradiation areas. Figure 3 A first irradiation region A1 of a rotating substrate W is shown, irradiated by a laser irradiation assembly 400 using a laser L. The first irradiation region A1 is an example of a unit irradiation region obtained by randomly dividing the substrate W to be heated. The shape and size of the unit irradiation region can be modified in various ways. In the following description, for ease of explanation, the entire area of ​​the substrate W (the area to be heated) is equally divided into n sector-shaped unit irradiation regions with the same central angle. One of the n equally divided unit irradiation regions is named the first irradiation region A1, and the other irradiation regions adjacent to the first irradiation region A1 are sequentially named the second irradiation region A2, the third irradiation region A3, up to the nth irradiation region An. A substrate processing method according to an exemplary embodiment will be described, wherein the substrate W is composed of n unit irradiation regions.

[0125] Each of the plurality of laser irradiation modules 500 in the laser irradiation assembly 400 can irradiate the substrate W with a laser L. Each of the plurality of laser irradiation modules 500 can irradiate a portion of a unit irradiation area of ​​the corresponding substrate W with the laser L. Each of the plurality of laser irradiation modules 500 can be configured such that the areas irradiated by the laser L do not overlap with each other. The laser L areas irradiated by each of the plurality of laser irradiation modules 500 can be combined to form a unit irradiation area. That is, when the plurality of laser irradiation modules 500 simultaneously irradiate different areas of the substrate W with the laser L, the laser irradiation assembly 400 can irradiate a unit irradiation area on the substrate W with the laser L.

[0126] like Figure 3 As shown, for ease of description, the laser irradiation assembly 400 is illustrated using an example comprising three laser irradiation modules 500. These laser irradiation modules 500 simultaneously irradiate different areas of the substrate W with laser L. The laser L emitted from each laser irradiation module 500 is combined to form a first irradiation area A1. In other words, the laser irradiation assembly 400 can irradiate the first irradiation area A1 with laser L.

[0127] Figure 12 This is an example diagram illustrating a substrate processing method according to an exemplary embodiment of the present invention.

[0128] In the following text, reference will be made to Figures 12 to 22 A substrate processing method according to an exemplary embodiment of the present invention is described. Since the substrate processing method described below is performed in the substrate processing apparatus 1 described above, therefore... Figures 1 to 11The reference numerals cited in the drawings are also cited hereinafter in the same manner. Furthermore, the substrate processing method according to the following exemplary embodiments can be executed by controlling the components included in the substrate processing apparatus via the controller 30.

[0129] The present invention will describe, as an example, a substrate processing method based on the following described etching process, in which a processing liquid as an etchant is supplied to a substrate W and the substrate W is heated and etched.

[0130] refer to Figure 12 In the substrate processing method according to an exemplary embodiment, a processing liquid is first supplied to the rotating substrate W (S10). Figure 13 It schematically shows the supply Figure 12 A schematic diagram of the liquid handling chamber during liquid processing. Further reference. Figure 13 In the liquid supply S10, liquid C is supplied to the rotating substrate W. Liquid C can be supplied from nozzle 389.

[0131] When the processing liquid C is supplied to the rotating substrate W, an amount of processing liquid C can be supplied sufficient to form a liquid film or a puddle. For example, the amount of processing liquid C supplied to the substrate W can cover the entire upper surface of the substrate W, but it can also be supplied in such a way that the amount of processing liquid C does not flow out of the substrate W, or even if the processing liquid C flows down, the amount of processing liquid C flowing down will not be large. If necessary, the processing liquid C can be supplied to the entire upper surface of the substrate W by changing the position of the nozzle 389, thereby forming a liquid film or a puddle on the substrate W.

[0132] After the liquid supply S10 is performed, when a liquid film is formed on the substrate W, a process is performed to heat the substrate W by irradiating the rotating substrate W with a laser L.

[0133] Figure 14 This is a schematic diagram of a liquid handling chamber when a substrate is irradiated with a laser using a laser irradiation device. In the operation of heating the substrate W using the laser irradiation assembly 400, the laser irradiation assembly 400 designates a unit irradiation area on the substrate W to be irradiated by the laser L (S20), modulates the laser L to correspond to the designated unit irradiation area (S30), and irradiates the designated unit irradiation area with the laser L whose frequency is synchronized with the rotation speed of the substrate W (S40).

[0134] Determine whether heat treatment for the designated unit irradiation area has been completed (S50). If not, continuously emit laser L with a frequency synchronized with the rotation speed of the substrate W into the designated unit irradiation area. After heat treatment for the designated unit irradiation area is completed, change the area to be irradiated by the laser L to another unit irradiation area on the substrate W (S60), modulate the laser L corresponding to the changed unit irradiation area (S30), and emit laser L with a frequency synchronized with the rotation speed of the substrate W into the designated unit irradiation area (S40).

[0135] When the heat treatment of the substrate W is completely completed by sequentially modulating and emitting laser L to all unit irradiation areas arranged on the substrate W as described above (S70), the processing technology of the substrate W, such as the etching process of the substrate W, can be terminated.

[0136] The following will refer to Figures 15 to 22 The operation of heating the substrate W using the laser irradiation assembly 400 described above will be described in more detail.

[0137] Figure 15 This is a schematic diagram illustrating the surface contour of the substrate and a unit irradiation area on the substrate. For example... Figure 15 As shown, by using the contour data of the substrate surface, a heating distribution map of the entire area of ​​the substrate can be obtained. The contour of the substrate surface can be measured by measuring member 560. Alternatively, the contour of the substrate surface can be obtained by performing a separate inspection process on the substrate W before loading it into the liquid processing chamber 300. Figure 15 In this example, for ease of description, different colors are used to show the state of the substrate surface. Figure 15 The dark areas marked on the substrate W shown represent points where a relatively high etching level is required, i.e., points where the heating amount using laser L is relatively high. Additionally, Figure 15 The bright areas marked on the substrate W shown can represent points where the required etching amount is relatively low, that is, points where the amount of heat generated by the laser L is relatively low.

[0138] As mentioned above, in Figure 15 The diagram shows the boundary lines of the entire area of ​​the substrate W divided into sector-shaped unit irradiation areas with the same central angle. Within the divided unit irradiation areas, a first irradiation area A1 and another irradiation area adjacent to the first irradiation area A1 (i.e., a second irradiation area A2) are shown.

[0139] In the step of heating the substrate W using the laser irradiation assembly 400, the laser irradiation assembly 400 designates a unit irradiation area of ​​the substrate W to be irradiated by the laser L (S20). For ease of explanation, the present invention will be described using the case where a first irradiation area A1 is designated as an example.

[0140] Figures 16 to 18 This is a schematic diagram illustrating the process of irradiating the first irradiation area of ​​a substrate supported and rotated by a support unit with a laser.

[0141] refer to Figure 16 The laser irradiation component 400 modulates the distribution of the laser L to correspond to the first irradiation region A1 (S30) and irradiates the first irradiation region A1 with the laser L (S40). That is, the laser irradiation component 400 forms a laser distribution corresponding to the irradiation pattern of the laser L to be emitted into the first irradiation region A1 by using a desired heating amount distribution map obtained from the contour data of the first irradiation region A1, and irradiates the first irradiation region A1 with the corresponding irradiation pattern. In the following, the irradiation pattern achieved by modulating the distribution of the laser L will be briefly described, wherein the laser irradiation component 400 and the laser irradiation module 500 irradiate the substrate W with the laser L.

[0142] The laser irradiation assembly 400 includes three laser irradiation modules 500 that simultaneously irradiate different areas within the first irradiation area A1 of the substrate W with laser L.

[0143] exist Figure 16 In the diagram, the substrate W is divided into three regions along the radial direction. In order to show that each laser irradiation module 500 corresponds to one of these three regions, the center of the imaging unit 550 of each laser irradiation module 500 is projected. When viewed from above, the circle is represented by a dashed line.

[0144] like Figure 16 As shown, since the regions corresponding to the three laser irradiation modules 500 are combined to form the first irradiation region A1, when each laser irradiation module 500 modulates the distribution of the laser L in the optical modulation unit 540 and irradiates the corresponding region with the modulated laser L, the laser L can irradiate the entire first irradiation region A1.

[0145] In this case, the laser irradiation assembly 400 is fixedly mounted above the support unit 340, and the substrate W rotates continuously, so that the irradiation position of the laser L becomes the first irradiation area A1 (i.e., the designated unit irradiation area), and it is necessary to synchronize the oscillation frequency of the laser L with the rotation speed of the substrate W.

[0146] In other words, such as Figure 17 As shown, when the first irradiation area A1 is not located below the laser irradiation component 400, the laser irradiation component 400 is controlled to not irradiate the substrate W with laser L.

[0147] In addition, such as Figure 16 and Figure 18As shown, when the substrate W is rotated and the first irradiation area A1 is located below the laser irradiation component 400, the laser irradiation component 400 is controlled to irradiate the substrate W with laser L.

[0148] Figure 19 This is a schematic diagram illustrating the change in intensity of a laser irradiating a first irradiation area over time according to an exemplary embodiment of the present invention. (Reference) Figure 19 The period of the laser L that irradiates the first irradiation area A1 in the laser irradiation component 400 is t1.

[0149] Since the oscillation frequency of the laser L is synchronized with the rotation speed of the substrate W, for example, when the rotation speed of the substrate W supported by the support unit 340 is 300 rpm, the oscillation frequency of the laser L can be 5 Hz, and t1 can be 0.2 s.

[0150] The laser L can be emitted in pulse form. That is, the laser L can be a pulsed laser. When emitting a laser L with a short pulse width, when the laser irradiation component 400 irradiates the first irradiation area A1 of the substrate W with the laser L, the irradiation of the adjacent unit irradiation area by the laser L can be minimized.

[0151] In this manner, a first irradiation area A1 is designated (S20), laser L is modulated to correspond to the first irradiation area A1 (S30), and when laser L at a frequency synchronized with the rotation speed of the substrate W irradiates the first irradiation area A1 (S40), the heating of the first irradiation area A1 is completed. The process S50 for determining whether the heat treatment of the first irradiation area A1 is complete can be performed based on data obtained by measuring the surface state of the substrate W in real time through the measuring member 560.

[0152] When it is determined that the heat treatment of the first irradiation area A1 is completed, the unit irradiation area of ​​the laser L to be irradiated is changed from the first irradiation area A1 to another unit irradiation area (S60), and the above series of processing steps S20 to S50 are executed in sequence.

[0153] Figure 20 This is a schematic diagram showing the state when a second irradiated area of ​​a substrate is irradiated with a laser. (Reference) Figure 20 When the heat treatment of the first irradiation area A1 is completed, the unit irradiation area to be irradiated by the laser L is changed from the first irradiation area A1 to the second irradiation area A2 (S60).

[0154] The laser irradiation component 400 modulates the distribution of the laser L to correspond to the second irradiation area A2 (S30), and irradiates the second irradiation area A2 with the laser L (S40). That is, the laser irradiation component 400 forms a laser distribution corresponding to the irradiation pattern of the laser L to be emitted into the second irradiation area A2 by using the required heating amount data obtained from the contour data of the second irradiation area A2, and irradiates the second irradiation area A2 with the corresponding irradiation pattern.

[0155] Similar to the case of the first irradiation area A1, when the substrate W rotates, the laser irradiation component 400 is controlled to irradiate the substrate W with laser L, and the second irradiation area A2 is located below the laser irradiation component 400.

[0156] Figure 21 This is a schematic diagram illustrating the change in intensity of a laser irradiating a second irradiation area over time according to an exemplary embodiment of the present invention.

[0157] refer to Figure 21 The laser L pulse irradiating the first irradiation area A1 is represented by a dashed line, and the laser L pulse irradiating the second irradiation area A2 is represented by a solid line. The laser irradiation assembly 400 can provide a delay to the laser L so that the laser L that has already irradiated the first irradiation area A1 can be used to irradiate the second irradiation area A2. This delay can vary depending on the area of ​​a unit irradiation area formed on the substrate W or the rotational speed of the substrate. This delay can be the shortest time between the time when the first irradiation area A1 is below the laser irradiation assembly 400 and the time when the second irradiation area A2 is below the laser irradiation assembly 400.

[0158] For example, such as Figure 20 In the exemplary embodiment shown, when the substrate W is divided into n unit irradiation areas, the delay imparted by the laser irradiation component 400 when changing the laser L irradiating the first irradiation area A1 to irradiating the second irradiation area A2 is the same as the time required for the substrate W to rotate 1 / n revolutions. This is because when the substrate W rotates 1 / n revolutions, the unit irradiation area located below the laser irradiation component 400 changes from the first irradiation area A1 to the second irradiation area A2.

[0159] The period of the laser L that irradiates the second irradiation area A2 through the laser irradiation component 400 is t2.

[0160] Since the oscillation frequency of laser L is synchronized with the rotational speed of substrate W, for example, when the rotational speed of substrate W supported by support unit 340 is 300 rpm, the oscillation frequency of laser L can be 5 Hz, and t2 can be 0.2 s. When substrate W rotates at the same speed during the process of irradiating substrate W with laser L to heat it, t2 is synchronized with... Figure 19 The t1 in them is the same.

[0161] In this manner, when the unit irradiation area irradiated by laser L is changed from the first irradiation area A1 to the second irradiation area A2 (S60), laser L is modulated to correspond to the second irradiation area A2 (S30), and the second irradiation area A2 is irradiated with laser L at a frequency synchronized with the rotation speed of the substrate W (S40), thus completing the heating of the second irradiation area A2. The process of determining whether the heat treatment on the second irradiation area A2 is complete (S50) can be performed by measuring the surface state of the substrate W in real time using the measuring member 560.

[0162] When it is determined that the heat treatment of the second irradiation area A2 is completed, the unit irradiation area of ​​the laser L to be irradiated is changed from the second irradiation area A2 to another unit irradiation area (S60), and a series of processing steps S20 to S50 are executed in sequence.

[0163] Figure 22 This is a schematic diagram showing the state when the Nth irradiated area of ​​the substrate is irradiated by a laser.

[0164] By modulating the laser L, all unit irradiation areas arranged on the substrate W are sequentially irradiated with the laser L, and when the heat treatment of the nth unit irradiation area An is determined to be completed (S70), the heating and etching of the entire area of ​​the substrate W that needs to be heated is completed. Thus, the etching process of the substrate W ends.

[0165] According to an exemplary embodiment, after the etching process on the substrate W is completed, a process of cleaning the substrate W by supplying a rinsing liquid R to the substrate W may be included. The rinsing liquid R may be supplied to the substrate W from a nozzle (not shown). More specifically, the rinsing liquid is supplied to the rotating substrate W, and the rinsing liquid R supplied to the substrate W removes etching impurities generated during the etching process described above from the substrate W. In addition, the rinsing liquid R may also replace the liquid film formed on the substrate W, thereby cleaning the substrate W.

[0166] According to an exemplary embodiment of the present invention, the substrate W can be divided into multiple unit irradiation areas, and the laser L can be modulated based on the heating demand distribution data of each unit irradiation area to be irradiated. Since the light modulation unit 540 can form irradiation patterns of various shapes based on the heating demand distribution data represented by a 2D contour within the unit irradiation area, the temperature distribution in local areas of the substrate W can be controlled, and local etching dispersion control can be performed on asymmetric areas of the substrate W, thereby enabling effective etching of the substrate according to the desired shape. Therefore, the efficiency of processes requiring precise dispersion control of the substrate W, such as substrate bonding, can be improved.

[0167] According to an exemplary embodiment of the present invention, the substrate W is divided into fan-shaped unit irradiation areas, and each unit irradiation area is irradiated with a laser L. Since the unit irradiation areas are fan-shaped, even if the laser L irradiates a rotating unit irradiation area of ​​the substrate W, the irradiation is not affected by the difference in angular velocity between the center and edge portions of the substrate W. Therefore, local areas of the substrate W can be precisely heated, and the etching accuracy of the substrate W can be improved.

[0168] According to an exemplary embodiment of the present invention, the laser irradiation assembly 400 includes a plurality of laser irradiation modules 500, and each laser irradiation module 500 irradiates a different area with a laser L, but the irradiated areas are combined to form a unit irradiation area. A laser irradiation module 500 irradiates only a portion of the substrate W with the laser L, and the laser irradiation assembly 400 also sequentially irradiates each unit irradiation area of ​​the substrate W to heat the entire substrate W. Therefore, a device that is not limited by the output of the laser L or by damage to the optical modulation element 542 can be designed, and the device can also be miniaturized.

[0169] According to an exemplary embodiment of the present invention, a fixed laser irradiation assembly 400 emits a laser L, and the oscillation frequency of the laser L is synchronized with the rotation speed of the substrate W, thereby maintaining the same irradiation position of the laser L on the rotating substrate W. Therefore, precise heating can be performed while irradiating the rotating substrate W with the laser L.

[0170] Furthermore, since the irradiation position of the laser L on the substrate W can be changed in a simple way to give the laser L a delay, a substrate processing apparatus and substrate processing method can be provided that can etch the entire surface of the substrate W without moving the unit emitting the laser L or by changing the path of the laser L using optical facilities such as lenses.

[0171] In the exemplary embodiments described above, the rotational speed of the substrate W was kept constant while the substrate W was heated. However, unlike this, the rotational speed of the substrate W can be changed as needed during the etching process, and the oscillation frequency of the laser L irradiating the substrate W can be synchronized with the changed rotational speed of the substrate W.

[0172] In the exemplary embodiments described above, a laser irradiation assembly 400 has been shown and described including three laser irradiation modules 500. However, unlike this, the number of laser irradiation modules can be provided in different quantities within the scope of the objectives to be achieved by the present invention.

[0173] In the exemplary embodiments described above, multiple laser irradiation modules 500 irradiate different areas with laser L, such that the areas irradiated by laser L do not overlap. However, when overlapping irradiation of laser L is required, such as when laser output is limited or the required heating amount is large, a portion or all of the areas irradiated by laser L through multiple laser irradiation modules 500 may overlap.

[0174] In the exemplary embodiments described above, for ease of description, the entire area of ​​the substrate W is shown and described as a fan-shaped unit irradiation area. However, unlike this, the unit irradiation area can be configured on the substrate W with a free shape and size.

[0175] In the exemplary embodiments described above, for ease of description, it has been shown and described that the entire area of ​​the substrate W is equally divided into n parts, and the shape and size of each unit irradiation area are the same. However, unlike this, each unit irradiation area may have a different shape and size, and the light modulation unit 540 may modulate the laser L to correspond to the shape and size of the corresponding unit irradiation area.

[0176] In the exemplary embodiments described above, heating the substrate by sequentially irradiating adjacent unit irradiation areas with a laser has been shown and described. However, unlike this, the substrate can also be heated by irradiating randomly arranged discontinuous unit irradiation areas with a laser, as needed.

[0177] In the exemplary embodiments described above, the entire area of ​​the substrate W has been heated by sequentially irradiating unit irradiation areas. However, unlike this, the substrate can be processed by selectively heating only a portion of the substrate W as needed.

[0178] In the exemplary embodiments described above, the supply of a processing liquid to the substrate W and subsequent heating of the substrate W have been shown and described, but the present invention is not limited thereto. The substrate W can be heated while the processing liquid is being supplied to it.

[0179] In the exemplary embodiments described above, the case where the substrate W processed in the liquid processing chamber 300 is a wafer is described as an example, but the present invention is not limited thereto. For example, the substrate can be provided as a substrate of various types and shapes that require etching or adjustment of pattern linewidth, such as photomasks, glass substrates and metal films, which are the "framework" used in the exposure process.

[0180] It should be understood that the embodiments disclosed herein are exemplary and other variations are possible. Elements or features of a particular exemplary embodiment are generally not limited to that particular exemplary embodiment, but are interchangeable and may be used in selected exemplary embodiments where applicable, even if not specifically described or illustrated. These modifications should not be considered as departing from the spirit and scope of the invention, and all modifications that are obvious to those skilled in the art are intended to be included within the scope of the appended claims.

Claims

1. A substrate processing method comprising: supplying a processing liquid to a rotating substrate; and heating the substrate by irradiating a laser to the rotating substrate on which a liquid film of the processing liquid is formed, wherein the substrate is divided into one or more unit irradiation regions, the laser irradiation assembly designates any one of the one or more unit irradiation regions and irradiates the designated unit irradiation region with the laser, and synchronizes an oscillation frequency of the laser with a rotation speed of the substrate so that an irradiation position of the laser is the designated unit irradiation region.

2. The substrate processing method according to claim 1, wherein the laser irradiation assembly modulates the laser by a light modulation unit and then irradiates the designated unit irradiation region on the rotating substrate.

3. The substrate processing method according to claim 2, wherein the light modulation unit obtains a required heating amount distribution map within the designated unit irradiation region based on a substrate surface profile of the designated unit irradiation region, and modulates the laser to correspond to the required heating amount distribution map.

4. The substrate processing method according to claim 2, wherein the light modulation unit is a digital micromirror device (DMD) unit, and the DMD unit includes a plurality of micromirrors provided to be rotatable, and the modulation of the laser is performed by adjusting a direction in which each of the plurality of micromirrors reflects the laser and selectively switching between an on state in which the laser is reflected to irradiate the substrate and an off state in which the laser is cut off.

5. The substrate processing method of claim 1, wherein, when the heat treatment of the designated unit irradiation region is completed by irradiating the designated unit irradiation region with the laser, a target region to be irradiated with the laser is changed from the designated unit irradiation region to another unit irradiation region, and the laser is modulated and irradiated to the other unit irradiation region.

6. The substrate processing method of claim 1, wherein, the laser is given a delay when the target region to be irradiated with the laser is changed from the designated unit irradiation region to the other unit irradiation region.

7. The substrate processing method according to claim 6, wherein the delay varies depending on an area of the unit irradiation region or a rotation speed of the substrate.

8. The substrate processing method of claim 6, wherein, the substrate is etched by irradiating the entire region of the substrate that requires heating with the modulated laser by sequentially modulating the laser and irradiating the one or more unit irradiation regions with the modulated laser.

9. The substrate processing method of claim 1, wherein, the one or more unit irradiation regions are formed in a fan shape.

10. The substrate processing method of claim 1, wherein, the one or more unit irradiation regions are formed to have the same area as each other.

11. The substrate processing method of claim 1, wherein, each of a plurality of the laser irradiation assemblies includes a plurality of laser irradiation modules that emit the laser, the plurality of laser irradiation modules respectively simultaneously irradiate different regions of the substrate with the laser, and regions irradiated by the plurality of laser irradiation modules are combined to form the unit irradiation region.

12. The substrate processing method of claim 1, wherein, the laser is output in a pulsed form.

13. A substrate processing apparatus, wherein, the substrate processing apparatus includes: a support unit for supporting a substrate; a liquid supply unit for supplying a processing liquid to the substrate supported by the support unit; a laser irradiation assembly for irradiating the substrate supported by the support unit with a laser; and a controller for controlling the laser irradiation assembly, wherein the laser irradiation assembly includes: a laser source for generating a laser; and a plurality of laser irradiation modules for emitting a laser, and the substrate is divided into one or more unit irradiation regions, and the controller controls the laser irradiation assembly to irradiate a designated unit irradiation region among the one or more unit irradiation regions of the rotating substrate with the laser, and to synchronize an oscillation frequency of the laser with a rotation speed of the substrate so that an irradiation position of the laser is the designated unit irradiation region.

14. The substrate processing apparatus of claim 13, wherein, the laser irradiation module includes a digital micromirror device (DMD) unit, which is a light modulation unit for modulating the laser generated by the laser source, and the DMD unit includes: a plurality of micromirrors provided to be rotatable; and a plate substrate mounting the plurality of micromirrors, and the controller controls the laser irradiation module to modulate the laser by adjusting a direction in which each of the plurality of micromirrors reflects the laser.

15. The substrate processing apparatus according to claim 13, wherein the laser irradiation assembly further includes a measurement member that detects a surface state of the substrate in real time.

16. The substrate processing apparatus of claim 13, wherein, each of the plurality of laser irradiation modules is configured to irradiate a different region of the substrate with the laser, respectively, and regions irradiated by the plurality of laser irradiation modules are combined to form the unit irradiation region. 17.A substrate processing method including: supplying a processing liquid onto a rotating substrate; and irradiating the rotating substrate on which a liquid film of the processing liquid is formed with a laser by a laser irradiation assembly, thereby heating the substrate, wherein the substrate is divided into a plurality of unit irradiation regions, and the laser irradiation assembly modulates the laser using a digital micromirror device (DMD) unit, and then designates one unit irradiation region among the plurality of unit irradiation regions and irradiates the designated unit irradiation region with the laser, and synchronizes an oscillation frequency of the laser with a rotation speed of the substrate so that an irradiation position of the laser is the designated unit irradiation region.

18. The substrate processing method of claim 17, wherein, the DMD unit obtains a required heating amount distribution map within the designated unit irradiation region based on a substrate surface profile of the designated unit irradiation region, and modulates the laser to correspond to the required heating amount distribution map.

19. The substrate processing method of claim 17, wherein, when a heat treatment of the designated unit irradiation region is completed by irradiating the designated unit irradiation region with the laser, a target region to be irradiated with the laser is changed from the designated unit irradiation region to another unit irradiation region, and the laser is modulated and irradiated to the other unit irradiation region, the substrate is etched by irradiating the entire region requiring heating on the substrate with the modulated laser by sequentially modulating the laser and irradiating one or more unit irradiation regions with the modulated laser.

20. The substrate processing method of claim 17, wherein, Each of the plurality of unit irradiation regions is formed in a fan shape.

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