Power module and electric power device having the same

Abstract

The application provides a power module and an electric device with the same, wherein the power module comprises a first conductive layer, a second conductive layer, a first chip and a second chip, the first conductive layer is provided with a first mounting area and a second mounting area at intervals, the first chip is arranged in the first mounting area and is electrically connected with the second conductive layer, the second chip is arranged on the second conductive layer, and the direction in which the second mounting area points to the first mounting area is a first preset direction; a direct current positive electrode terminal comprises a first vertical connecting part and a first horizontal connecting part, the first vertical connecting part is connected in the second mounting area, at least part of the structure of the first horizontal connecting part is located directly above the first conductive layer and extends along the first preset direction, and the current direction of the first horizontal connecting part is opposite to the first preset direction; and a direct current negative electrode terminal is electrically connected with the second chip. The technical scheme of the application effectively solves the problem of large parasitic inductance of the power module in the related art.

Description

Technical Field

[0001] This invention relates to the field of semiconductor power module technology, and more specifically, to a power module and a power device having the same. Background Technology

[0002] By alternating operation of the first and second chips in the half-bridge power module, rapid switching of the power module can be achieved. The first chip is connected to both the positive terminal and the AC terminal of the power module. The second chip is connected to both the negative terminal and the AC terminal of the power module.

[0003] In related technologies, the positive terminal, negative terminal, and AC terminal are arranged irrationally in order to conduct to the first chip and / or the second chip, which in turn leads to a large parasitic inductance of the power module. Summary of the Invention

[0004] The main objective of this invention is to provide a power module and a power device having the same, in order to solve the problem of large parasitic inductance in power modules in related technologies.

[0005] To achieve the above objectives, according to one aspect of the present invention, a power module is provided, comprising: a first bridge arm structure including a first substrate, a first conductive layer, a second conductive layer, a first chip, and a second chip, wherein the first conductive layer and the second conductive layer are disposed on the first substrate at a distance, wherein a first mounting region and a second mounting region are disposed at a distance on the first conductive layer, the first chip is disposed in the first mounting region and conductively connected to the second conductive layer, the second chip is disposed on the second conductive layer, and the direction of the second mounting region pointing to the first mounting region is a first preset direction; a DC positive terminal including a first vertical connecting portion and a first horizontal connecting portion connected to the first vertical connecting portion, wherein the first vertical connecting portion is connected to the second mounting region, at least a portion of the structure of the first horizontal connecting portion is located directly above the first conductive layer and extends along the first preset direction, and the current direction of the first horizontal connecting portion is opposite to the first preset direction; a DC negative terminal conductively connected to the second chip; and an AC terminal conductively connected to the second conductive layer.

[0006] Furthermore, the first transverse connecting portion includes a first transverse connecting plate, the first transverse connecting plate includes a first plate body, and the extension direction of the first plate body is set at an angle to the first preset direction.

[0007] Furthermore, a first strip-shaped hole is provided on the first plate.

[0008] Furthermore, the first transverse connecting plate also includes a second plate body, which is connected between the first plate body and the first vertical connecting portion. The second plate body is disposed on the side of the first plate body and extends along a first preset direction.

[0009] Furthermore, the power module also includes a second bridge arm structure, which includes a second substrate, a third conductive layer, a fourth conductive layer, a third chip, and a fourth chip. The third conductive layer and the fourth conductive layer are disposed on the second substrate at intervals. The third chip is disposed on the third conductive layer and is electrically connected to the fourth conductive layer. The fourth chip is disposed on the fourth conductive layer. The first lateral connecting portion is connected to the third conductive layer. The DC negative terminal is electrically connected to the fourth chip. The AC terminal is connected to the fourth conductive layer.

[0010] Furthermore, the AC terminal includes a second vertical connecting portion and a second horizontal connecting portion. A third mounting area and a fourth mounting area are spaced apart on the fourth conductive layer. The direction from the third mounting area to the fourth mounting area is a second preset direction. The second vertical connecting portion is connected to the third mounting area. The second vertical connecting portion is connected to the first end of the second horizontal connecting portion. At least a portion of the structure of the second horizontal connecting portion is located directly above the fourth conductive layer. At least a portion of the structure of the second horizontal connecting portion extends along the second preset direction. The second end of the second horizontal connecting portion is connected to an external conductive structure. The current direction of the second horizontal connecting portion is opposite to the second preset direction.

[0011] Furthermore, the second transverse connecting portion includes a second transverse connecting plate, the second transverse connecting plate includes a third plate and a fourth plate, the third plate is connected between the second vertical connecting portion and the fourth plate, the external conductive structure is connected to the fourth plate, and the fourth plate is disposed on the side of the third plate away from the first bridge arm structure.

[0012] Furthermore, the AC terminal also includes an extension connecting plate connected between the external conductive structure and the fourth plate. The extension connecting plate is disposed on the side of the fourth plate, and the corner of the fourth plate away from the extension connecting plate is a chamfered portion.

[0013] Furthermore, a second strip hole is provided on the third plate, and / or a third strip hole is provided on the fourth plate.

[0014] Furthermore, the AC terminal also includes a third vertical connecting portion connected to the second conductive layer, and the second horizontal connecting plate also includes a fifth plate body disposed on the third plate body, with the third vertical connecting portion connected to the fifth plate body.

[0015] Furthermore, the first bridge arm structure and the second bridge arm structure are symmetrically arranged. The AC terminal also includes a third vertical connection part, which is connected between the second horizontal connection part and the second conductive layer. The DC positive terminal also includes a fourth vertical connection part, which is connected between the third conductive layer and the first horizontal connection part. In the direction from the first bridge arm structure to the second bridge arm structure, the first vertical connection part, the second vertical connection part, the third vertical connection part, the fourth vertical connection part, and the DC negative terminal are all located between the second chip and the fourth chip.

[0016] Furthermore, the first bridge arm structure also includes a fifth conductive layer, the second chip is electrically connected to the fifth conductive layer, and the DC negative terminal includes a fifth vertical connection portion disposed on the fifth conductive layer, and / or, the second bridge arm structure also includes a sixth conductive layer, the fourth chip is electrically connected to the sixth conductive layer, and the DC negative terminal includes a sixth vertical connection portion disposed on the sixth conductive layer.

[0017] Furthermore, a clearance via is provided in the middle of the second conductive layer. The power module also includes a gate conductive layer and a first conductive connector. The gate conductive layer is disposed on the first substrate and located in the clearance via. The first conductive connector connects the gate conductive layer and the second chip.

[0018] Furthermore, the power module also includes a second conductive connector, which connects the first chip and the second conductive layer.

[0019] Furthermore, the power module also includes a base plate, a first substrate is disposed on the base plate, and the power module also includes a gate terminal disposed on the base plate, the gate terminal being controlled and connected to the first chip.

[0020] According to another aspect of the present invention, an electric device is provided, including a power module, wherein the power module is the power module described above.

[0021] According to the technical solution of this invention, the power module includes a first bridge arm structure, a DC positive terminal, a DC negative terminal, and an AC terminal. When the first chip is running and the second chip is not running, current can flow in from the first lateral connection portion of the DC positive terminal, then through the first lateral connection portion to the first vertical connection portion, then through the first vertical connection portion to the first conductive layer, then through the first conductive layer to the first chip, and then through the first chip to the second conductive layer, and then out through the AC terminal. When the first chip is not running and the second chip is running, current can flow from the AC terminal to the second conductive layer, then through the second conductive layer to the second chip, and then through the second chip to the DC negative terminal, and then out through the DC negative terminal. When the current flows in the first lateral connection portion, the direction of current flow is opposite to the first preset direction, so that the parasitic inductance generated when the current flows through the first lateral connection portion and the parasitic inductance generated when the current flows through the first conductive layer can cancel each other out, thereby reducing the parasitic inductance of the power circuit of the power module. Therefore, the technical solution of this application effectively solves the problem of large parasitic inductance of power modules in related technologies. Attached Figure Description

[0022] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0023] Figure 1 A three-dimensional structural schematic diagram of an embodiment of the power module according to the present invention is shown;

[0024] Figure 2 It shows Figure 1 A three-dimensional structural diagram of the power module without the enclosure installed;

[0025] Figure 3 It shows Figure 2 A three-dimensional structural diagram of the power module from another perspective;

[0026] Figure 4 It shows Figure 1 A three-dimensional structural diagram showing the connection between the base plate of the power module, the first bridge arm structure, and the second bridge arm structure.

[0027] Figure 5 It shows Figure 1 A three-dimensional structural diagram of the first bridge arm structure, DC positive terminal, DC negative terminal, and AC terminal connection of the power module;

[0028] Figure 6 It shows Figure 1 A three-dimensional structural diagram showing the connection between the first conductive layer of the power module and the DC positive terminal.

[0029] Figure 7 It shows Figure 6 A top view of the power module;

[0030] Figure 8 It shows Figure 1 A three-dimensional structural diagram of the second bridge arm structure, DC positive terminal, DC negative terminal, and AC terminal connection of the power module;

[0031] Figure 9 It shows Figure 8 A top view of the power module;

[0032] Figure 10 It shows Figure 1 A three-dimensional structural diagram showing the connection between the fourth conductive layer of the power module and the AC terminal;

[0033] Figure 11 It shows Figure 10 A top view of the power module.

[0034] The above figures include the following reference numerals:

[0035] 10. First bridge arm structure; 11. First substrate; 12. First conductive layer; 121. First mounting area; 122. Second mounting area; 13. Second conductive layer; 131. Clearance via; 14. First chip; 15. Second chip; 16. Fifth conductive layer; 20. DC positive terminal; 21. First vertical connection part; 22. First horizontal connection part; 221. First horizontal connection plate; 2211. First plate body; 22111. First strip hole; 2212. Second plate body; 23. Fourth vertical connection part; 30. DC negative terminal; 31. Fifth vertical connection part; 32. Sixth vertical connection part; 40. AC terminal; 41. Second vertical connection part; 42. Second transverse connecting portion; 421, second transverse connecting plate; 4211, third plate; 42111, second strip hole; 4212, fourth plate; 42121, chamfered portion; 42122, third strip hole; 4213, fifth plate; 43, extension connecting plate; 44, third vertical connecting portion; 50, second bridge arm structure; 51, second substrate; 52, third conductive layer; 53, fourth conductive layer; 531, third mounting area; 532, fourth mounting area; 54, third chip; 55, fourth chip; 56, sixth conductive layer; 60, gate conductive layer; 70, first conductive connector; 80, second conductive connector; 90, base plate; 100, gate terminal. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0038] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following figures denote similar items; therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0039] like Figures 1 to 6 As shown, the power module of this embodiment includes: a first bridge arm structure 10, a DC positive terminal 20, a DC negative terminal 30, and an AC terminal 40. The first bridge arm structure 10 includes a first substrate 11, a first conductive layer 12, a second conductive layer 13, a first chip 14, and a second chip 15. The first conductive layer 12 and the second conductive layer 13 are disposed on the first substrate 11 at intervals. A first mounting area 121 and a second mounting area 122 are disposed on the first conductive layer 12 at intervals. The first chip 14 is disposed in the first mounting area 121 and is conductively connected to the second conductive layer 13. The second chip 15 is disposed on the second conductive layer 13. The direction from the second mounting area 122 to the first mounting area 121 is a first preset direction. The DC positive terminal 20 includes a first vertical connection portion 21 and a first horizontal connection portion 22 connected to the first vertical connection portion 21. The first vertical connection portion 21 is connected within the second mounting area 122. At least a portion of the structure of the first horizontal connection portion 22 is located directly above the first conductive layer 12 and extends along a first preset direction. The current direction of the first horizontal connection portion 22 is opposite to the first preset direction. The DC negative terminal 30 is electrically connected to the second chip 15. The AC terminal 40 is electrically connected to the second conductive layer 13.

[0040] Using the technical solution of this embodiment, the power module includes a first bridge arm structure 10, a DC positive terminal 20, a DC negative terminal 30, and an AC terminal 40. When the first chip 14 is running and the second chip 15 is not running, current can flow in from the first horizontal connection portion 22 of the DC positive terminal 20, and then flow through the first horizontal connection portion 22 to the first vertical connection portion 21, then through the first vertical connection portion 21 to the first conductive layer 12, then through the first conductive layer 12 to the first chip 14, and then through the first chip 14 to the second conductive layer 13, and then out through the AC terminal 40. When the first chip 14 is not running and the second chip 15 is running, current can flow from the AC terminal 40 to the second conductive layer 13, then through the second conductive layer 13 to the second chip 15, and then through the second chip 15 to the DC negative terminal 30, and then out through the DC negative terminal 30. When current flows on the first conductive layer 12, a portion of the current flows in the same direction as the first preset direction, while when current flows on the first transverse connecting portion 22, a portion of the current flows in the opposite direction to the first preset direction. This allows the parasitic inductance generated when current flows through the first transverse connecting portion 22 and the parasitic inductance generated when current flows through the first conductive layer 12 to cancel each other out, thereby reducing the parasitic inductance of the power circuit of the power module. Therefore, the technical solution of this embodiment effectively solves the problem of large parasitic inductance in power modules in related technologies.

[0041] It should be noted that the drain of the first chip 14 is disposed on the first conductive layer 12. The source of the first chip 14 is connected to the second conductive layer 13. The drain of the second chip 15 is disposed on the second conductive layer 13, and the source of the second chip 15 is connected to the fifth conductive layer 16.

[0042] Specifically, the drain of the first chip 14 is located within the first mounting area 121.

[0043] The current direction of the first transverse connecting portion 22 is opposite to the first preset direction, meaning that one component of the current density vector of the current on the first transverse connecting portion 22 is opposite to the first preset direction.

[0044] The first conductive layer 12 is the first conductive plate, and the second conductive layer 13 is the second conductive plate.

[0045] The directions of the first conductive layer 12 to the second conductive layer 13 are perpendicular to the first preset direction.

[0046] The power module in this embodiment is a half-bridge module.

[0047] Both the first chip 14 and the second chip 15 include multiple chips.

[0048] like Figure 2 and Figure 7As shown, in this embodiment, the first transverse connecting portion 22 includes a first transverse connecting plate 221, which includes a first plate body 2211. The extending direction of the first plate body 2211 is set at an angle to the first preset direction. Setting the first transverse connecting portion 22 as a first transverse connecting plate 221 makes its structure more reasonable. Compared to a rod-shaped structure, the ratio of the area of ​​the projected region of the first transverse connecting plate 221 on the first conductive layer 12 to the area of ​​the first conductive layer 12 is more reasonable, which helps to cancel out the parasitic inductance generated when current flows through the first transverse connecting portion 22 and the parasitic inductance generated when current flows through the first conductive layer 12. The extending direction of the first plate body 2211 is set at an angle to the first preset direction, allowing the current to have a shorter path when flowing through the first plate body 2211.

[0049] It should be noted that the area of ​​the projected region of the first plate 2211 on the first conductive layer 12 is S1, and the area of ​​the first conductive layer 12 is S2. The value of S1 / S2 satisfies: 0.2 ≤ S1 / S2 ≤ 1. The value of S1 / S2 can be 0.2, 0.25, 0.29, 0.295, 0.3, 0.5, 0.7, 0.9, or 1. In this embodiment, the value of S1 / S2 is 0.295.

[0050] like Figure 2 and Figure 7 As shown, in this embodiment, a first strip-shaped hole 22111 is provided on the first plate 2211. The first strip-shaped hole 22111 can increase the air venting effect of the adhesive during the potting process, thereby preventing the generation of eddies inside the power module during the potting process.

[0051] It should be noted that the colloid is a silica gel.

[0052] Specifically, the angle between the extension direction L1 of the first strip hole 22111 and the first preset direction is greater than 90° and less than 180°, and can be 95°, 120°, 140°, 142°, 150°, 170° or 175°. In this embodiment, the angle between the extension direction L1 of the first strip hole 22111 and the first preset direction is 142°.

[0053] The extension direction of the first plate 2211 is parallel to the extension direction L1 of the first strip hole 22111. This allows the first plate to have a larger flow area.

[0054] like Figure 2 and Figure 7As shown, in this embodiment, the first horizontal connecting plate 221 further includes a second plate 2212. The second plate 2212 is connected between the first plate 2211 and the first vertical connecting portion 21. The second plate 2212 is disposed on the side of the first plate 2211 and extends along a first preset direction. The second plate 2212 can connect the first plate 2211 and the first vertical connecting portion 21, facilitating the flow of current between the first plate 2211 and the first vertical connecting portion 21.

[0055] like Figures 2 to 4 , Figure 8 as well as Figure 9 As shown, in this embodiment, the power module further includes a second bridge arm structure 50. The second bridge arm structure 50 includes a second substrate 51, a third conductive layer 52, a fourth conductive layer 53, a third chip 54, and a fourth chip 55. The third conductive layer 52 and the fourth conductive layer 53 are disposed on the second substrate 51 at intervals. The third chip 54 is disposed on the third conductive layer 52 and electrically connected to the fourth conductive layer 53. The fourth chip 55 is disposed on the fourth conductive layer 53. The first lateral connecting portion 22 is connected to the third conductive layer 52. The DC negative terminal 30 is electrically connected to the fourth chip 55. The AC terminal 40 is connected to the fourth conductive layer 53. The second bridge arm structure 50 allows the power module to carry a larger current. When the third chip 54 is running and the fourth chip 55 is not running, the current can flow from the DC positive terminal 20 into the third conductive layer 52, then through the third conductive layer 52 into the third chip 54, and then through the third chip 54 into the fourth conductive layer 53, and finally out through the AC terminal 40. When the third chip 54 stops operating and the fourth chip 55 is operating, current can flow from the AC terminal 40 into the fourth conductive layer 53, and then through the fourth conductive layer 53 into the fourth chip 55, and then through the fourth chip 55 into the DC negative terminal 30, and finally out through the DC negative terminal 30.

[0056] Specifically, the second bridge arm structure 50 is arranged in parallel with the first bridge arm structure 10.

[0057] It should be noted that the drain of the third chip 54 is connected to the third conductive layer 52. The source of the third chip 54 is connected to the fourth conductive layer 53. The drain of the fourth chip 55 is connected to the fourth conductive layer 53.

[0058] The third conductive layer 52 is the third conductive plate, and the fourth conductive layer 53 is the fourth conductive plate.

[0059] In this embodiment, the first chip 14, the second chip 15, the third chip 54, and the fourth chip 55 can be silicon carbide MOSFET (metal-oxide-semiconductor field-effect transistor) chips, or other chips.

[0060] When the first chip 14 and the third chip 54 are running, the second chip 15 and the fourth chip 55 stop running.

[0061] The first conductive layer 12 and the third conductive layer 52 are adjacent and symmetrically arranged, and the second conductive layer 13 and the fourth conductive layer 53 are adjacent and symmetrically arranged.

[0062] Both the third chip 54 and the fourth chip 55 consist of multiple chips.

[0063] like Figures 8 to 11 As shown, in this embodiment, the AC terminal 40 includes a second vertical connecting portion 41 and a second horizontal connecting portion 42. A third mounting area 531 and a fourth mounting area 532 are spaced apart on the fourth conductive layer 53. The direction from the third mounting area 531 to the fourth mounting area 532 is a second preset direction. The second vertical connecting portion 41 is connected within the third mounting area 531. The second vertical connecting portion 41 is connected to the first end of the second horizontal connecting portion 42. At least a portion of the structure of the second horizontal connecting portion 42 is located directly above the fourth conductive layer 53. At least a portion of the structure of the second horizontal connecting portion 42 extends along the second preset direction. The second end of the second horizontal connecting portion 42 is connected to an external conductive structure. The current direction of the second horizontal connecting portion 42 is opposite to the second preset direction. When the fourth chip 55 is running, current can flow from the second horizontal connection portion 42 to the second vertical connection portion 41, and then through the second vertical connection portion 41 to the fourth conductive layer 53. After that, current flows into the fourth chip 55 through the fourth conductive layer 53. When the current flows on the fourth conductive layer 53, part of the current flows in the second preset direction, and when the current flows on the second horizontal connection portion 42, part of the current flows in the opposite direction to the second preset direction. This allows the parasitic inductance generated when the current flows through the fourth conductive layer 53 and the parasitic inductance generated when the current flows through the second horizontal connection portion 42 to cancel each other out, thereby reducing the parasitic inductance of the power module. When the third chip 54 is operating, current can flow from the third chip 54 to the fourth conductive layer 53, then through the second vertical connection portion 41 to the second horizontal connection portion 42, and out through the second horizontal connection portion 42. When the current flows on the fourth conductive layer 53, it flows in a direction opposite to the second preset direction. When the current flows on the second horizontal connection portion 42, part of the current flows in the second preset direction. This allows the parasitic inductance generated when the current flows through the fourth conductive layer 53 and the parasitic inductance generated when the current flows through the second horizontal connection portion 42 to cancel each other out, thereby reducing the parasitic inductance of the power module. Current can flow between the second horizontal connection portion 42 and the external conductive structure.

[0064] It should be noted that the external conductive structure is a busbar.

[0065] The current direction of the second transverse connecting portion 42 is opposite to the second preset direction, meaning that one component of the current density vector of the current on the second transverse connecting portion 42 is opposite to the second preset direction.

[0066] The second preset direction is set parallel to the first preset direction.

[0067] like Figure 10 As shown, the arrow points in the direction of current flow when the fourth chip is running.

[0068] like Figures 8 to 11 As shown, in this embodiment, the second lateral connecting portion 42 includes a second lateral connecting plate 421, which includes a third plate 4211 and a fourth plate 4212. The third plate 4211 is connected between the second vertical connecting portion 41 and the fourth plate 4212, and an external conductive structure is connected to the fourth plate 4212. The fourth plate 4212 is disposed on the side of the third plate 4211 away from the first bridge arm structure 10. The third plate 4211 connects the second vertical connecting portion 41 and the fourth plate 4212, facilitating current flow. The arrangement of the third plate 4211 and the fourth plate 4212 allows current to flow between the second vertical connecting portion 41, the third plate 4211, the fourth plate 4212, and the external conductive structure.

[0069] It should be noted that the extension direction L2 of the third plate 4211 and the extension direction L3 of the fourth plate 4212 are set at an angle. The included angle between the extension direction L2 of the third plate 4211 and the extension direction L3 of the fourth plate 4212 can be 20°, 30°, 45°, 50°, 60°, 63°, 75°, or 89°. In this embodiment, the included angle between the extension direction L2 of the third plate 4211 and the extension direction L3 of the fourth plate 4212 is 63°.

[0070] The extension direction L2 of the third plate 4211 has an obtuse angle with the second preset direction, which can be 95°, 110°, 120°, 135°, 150°, or 170°. The extension direction L3 of the fourth plate 4212 has an acute angle with the second preset direction, which can be 10°, 15°, 30°, 50°, 60°, 80°, or 89°. In this embodiment, the angle between the extension direction L3 of the fourth plate 4212 and the second preset direction is 45°.

[0071] like Figure 10As shown, in this embodiment, the AC terminal 40 further includes an extension connecting plate 43 connecting the external conductive structure and the fourth plate 4212. The extension connecting plate 43 is disposed on the side of the fourth plate 4212, and the corner of the fourth plate 4212 away from the extension connecting plate 43 is a chamfered portion 42121. The extension connecting plate 43 is provided so that current can flow between the external conductive structure and the fourth plate 4212. The chamfered portion 42121 can prevent sharp points on the fourth plate 4212 from causing point discharge, and can also shorten the current path.

[0072] like Figure 11 As shown, in this embodiment, a second strip-shaped hole 42111 is provided on the third plate 4211. The second strip-shaped hole 42111 can increase the air venting effect of the adhesive during the potting process, thereby preventing the generation of eddies inside the power module during the potting process.

[0073] The extension direction of the second strip-shaped hole 42111 is parallel to the extension direction L2 of the third plate 4211. This allows the first plate to have a larger flow area.

[0074] like Figure 10 As shown, in this embodiment, a third strip-shaped hole 42122 is provided on the fourth plate 4212. Providing the third strip-shaped hole 42122 can increase the venting effect of the adhesive during the potting process, thereby preventing the generation of eddies inside the power module during the potting process.

[0075] The extension direction of the third strip hole 42122 is parallel to the extension direction L3 of the fourth plate 4212.

[0076] like Figure 2 , Figure 5 as well as Figure 10 As shown, in this embodiment, the AC terminal 40 further includes a third vertical connecting portion 44 connected to the second conductive layer 13, and the second horizontal connecting plate 421 further includes a fifth plate body 4213, which is disposed on the third plate body 4211. The third vertical connecting portion 44 is connected to the fifth plate body 4213. The third vertical connecting portion 44 facilitates the flow of current between the second conductive layer 13 and the second horizontal connecting portion 42. The fifth plate body 4213 connects the third vertical connecting portion 44 and the third plate body 4211, facilitating the flow of current from the second conductive layer 13 to the third vertical connecting portion 44, then through the third vertical connecting portion 44 to the fifth plate body 4213, and finally through the fifth plate body 4213 to the third plate body 4211.

[0077] It should be noted that the second vertical connecting part 41 is connected to the fifth plate 4213.

[0078] like Figures 2 to 5 as well as Figure 10 As shown, in this embodiment, the first bridge arm structure 10 and the second bridge arm structure 50 are symmetrically arranged. The AC terminal 40 also includes a third vertical connection portion 44, which is connected between the second horizontal connection portion 42 and the second conductive layer 13. The DC positive terminal 20 also includes a fourth vertical connection portion 23, which is connected between the third conductive layer 52 and the first horizontal connection portion 22. In the direction from the first bridge arm structure 10 to the second bridge arm structure 50, the first vertical connection portion 21, the second vertical connection portion 41, the third vertical connection portion 44, the fourth vertical connection portion 23, and the DC negative terminal 30 are all located between the second chip 15 and the fourth chip 55. The first bridge arm structure 10 and the second bridge arm structure 50 are symmetrically arranged, so that the current paths of the first chip 14, the second chip 15, the third chip 54, and the fourth chip 55 are basically consistent in terms of combined length and impedance. That is, the current of the power circuit of the power module is symmetrical, which can reduce the parasitic inductance of the power module and achieve high-precision current sharing. Current can flow from the second conductive layer 13 to the third vertical connection portion 44, and then from the third vertical connection portion 44 to the second horizontal connection portion 42. Current can flow from the first horizontal connection portion 22 to the third conductive layer 52. In the direction from the first bridge arm structure 10 to the second bridge arm structure 50, the first vertical connection portion 21, the second vertical connection portion 41, the third vertical connection portion 44, the fourth vertical connection portion 23, and the DC negative terminal 30 are all located between the second chip 15 and the fourth chip 55, which makes the positions of the first vertical connection portion 21, the second vertical connection portion 41, the third vertical connection portion 44, the fourth vertical connection portion 23, and the DC negative terminal 30 more reasonable.

[0079] It should be noted that the first bridge arm structure 10 and the second bridge arm structure 50 are symmetrically arranged about the first preset plane.

[0080] like Figure 9 As shown, the dashed line is the boundary between the fifth and sixth installation areas.

[0081] like Figures 2 to 4 As shown, in this embodiment, the first bridge arm structure 10 further includes a fifth conductive layer 16, the second chip 15 is electrically connected to the fifth conductive layer 16, and the DC negative terminal 30 includes a fifth vertical connection portion 31 disposed on the fifth conductive layer 16. Current can flow through the second chip 15 to the fifth conductive layer 16, and then the current can flow through the fifth conductive layer 16 to the fifth vertical connection portion 31.

[0082] It should be noted that the fifth conductive layer is the fifth conductive plate.

[0083] like Figures 2 to 4As shown, in this embodiment, the second bridge arm structure 50 further includes a sixth conductive layer 56, the fourth chip 55 is electrically connected to the sixth conductive layer 56, and the DC negative terminal 30 includes a sixth vertical connection portion 32 disposed on the sixth conductive layer 56. Current can flow through the fourth chip 55 to the sixth conductive layer 56, and then current can flow through the sixth conductive layer 56 to the sixth vertical connection portion 32.

[0084] It should be noted that the source of the fourth chip 55 is connected to the sixth conductive layer 56.

[0085] The sixth conductive layer is the sixth conductive plate.

[0086] The fifth and sixth conductive layers are adjacent and symmetrically arranged. The direction from the first to the second conductive layer is parallel to the width direction of the base plate. The direction from the first to the third conductive layer is parallel to the length direction of the base plate.

[0087] like Figure 2 and Figure 5 As shown, in this embodiment, a clearance via 131 is provided in the middle of the second conductive layer 13. The power module also includes a gate conductive layer 60 and a first conductive connector 70. The gate conductive layer 60 is disposed on the first substrate 11 and located within the clearance via 131. The first conductive connector 70 connects the gate conductive layer 60 and the second chip 15. The clearance via 131 facilitates the arrangement of the gate conductive layer 60 on the first substrate 11. The first conductive connector 70 connects the gate conductive layer 60 and the second chip 15, allowing current to flow between the gate conductive layer 60 and the second chip 15, thereby controlling the on / off state of the second chip 15.

[0088] It should be noted that the first conductive connector 70 is connected to the gate of the second chip 15. The first conductive connector 70 is a bonding wire.

[0089] The gate conductive layer 60 includes a first gate conductive plate.

[0090] like Figure 5 As shown, in this embodiment, the power module further includes a second conductive connector 80, which connects the first chip 14 and the second conductive layer 13. This arrangement allows current to flow between the first chip 14 and the second conductive layer 13.

[0091] It should be noted that the second conductive connector 80 is connected to the source of the first chip 14. The first conductive connector 70 can be a bonding wire or a metal conductive block.

[0092] like Figure 2As shown, in this embodiment, the power module further includes a base plate 90, a first substrate 11 disposed on the base plate 90, and a gate terminal 100 disposed on the base plate 90. The gate terminal 100 is controlled to be connected to the first chip 14. The base plate 90 can support the gate terminal 100. Current can flow between the gate terminal 100 and the first chip 14, thereby controlling the opening and closing of the gate of the first chip 14.

[0093] Specifically, the power module also includes a enclosure plate, which is set on the base plate 90, and the first bridge arm structure 10 and the second bridge arm structure 50 are both located inside the enclosure plate.

[0094] The base plate is made of metal. It not only provides mechanical support for the entire power module, but also transfers the heat generated by the power module to the external heat sink.

[0095] It should be noted that the power module also includes a first source conductive plate, which is conductively connected to the source of the first chip 14.

[0096] The power module also includes a second gate conductive plate, which is electrically connected to the gate of the first chip 14. Along the direction from the first conductive layer 12 to the second conductive layer 13, the first source conductive plate and the second gate conductive plate are spaced apart, and both are located on the side of the first conductive layer 12 away from the second conductive layer 13.

[0097] The power module also includes a second source conductive plate, which is disposed in the clearance through hole 131 and is conductively connected to the source of the second chip 15.

[0098] The power module also includes a third source conductive plate, which is disposed on the second substrate 51 and is conductively connected to the source of the third chip 54.

[0099] The power module also includes a third gate conductive plate, which is disposed on the second substrate 51 and is conductively connected to the gate of the third chip 54.

[0100] The power module also includes a fourth source conductive plate, which is disposed on the second substrate 51 and is conductively connected to the source of the fourth chip 55.

[0101] In the direction from the third conductive layer 52 to the fourth conductive layer 53, the fourth source conductive plate and the third gate conductive plate are spaced apart, and both the fourth source conductive plate and the third gate conductive plate are located on the side of the third conductive layer 52 away from the fourth conductive layer 53.

[0102] The power module also includes a fourth gate conductive plate, which is disposed on the second substrate 51 and is conductively connected to the gate of the fourth chip 55.

[0103] The second substrate 51 is also provided with a clearance through hole 131, and the fourth source conductive plate and the fourth gate conductive plate are both disposed in the clearance through hole on the second substrate 51.

[0104] The power module also includes a first source signal terminal, which is connected to both the first and third source conductive plates. The power module also includes a second source signal terminal, which is electrically connected to both the second and fourth source conductive plates. There are two gate terminals, one of which is electrically connected to both the second and third gate conductive plates, and the other is electrically connected to both the first and fourth gate conductive plates.

[0105] The DC positive terminal 20 also includes a first extended connecting plate, which is disposed at the end of the first plate 2211 away from the second plate 2212. The DC negative terminal 30 also includes a second extended connecting plate, which is connected to both the fifth vertical connecting portion 31 and the sixth vertical connecting portion 32. The first extended connecting plate, the second extended connecting plate, and the extended connecting plate 43 are all arranged in parallel.

[0106] A first metal layer is disposed on the side of the first substrate 11 away from the first conductive layer 12. The first metal layer, the first substrate 11, the first conductive layer 12, the second conductive layer 13, and the fifth conductive layer 16 form a sandwich structure of "metal layer-insulating layer-metal layer". The first substrate 11 can be made of ceramic to ensure electrical isolation. The first metal layer can conduct heat.

[0107] A second metal layer is disposed on the side of the second substrate 51 away from the third conductive layer 52. The second metal layer, the second substrate 51, the third conductive layer 52, the fourth conductive layer 53, and the sixth conductive layer 56 form a sandwich structure of "metal layer-insulating layer-metal layer". The second substrate 51 can be made of ceramic to ensure electrical isolation. The second metal layer can conduct heat.

[0108] The first chip 14 and the first conductive layer 12, the second chip 15 and the second conductive layer 13, the third chip 54 and the third conductive layer 52, and the fourth chip 55 and the fourth conductive layer 53 can be connected by welding or high-temperature sintering.

[0109] This embodiment relates to the field of power semiconductor module packaging, specifically to a power semiconductor module packaging structure suitable for voltage levels of 1200V-2300V and current levels of 300A-600A, which can meet the requirements of high reliability, low parasitic parameters and high thermal uniformity for medium and low voltage high current application scenarios such as power grid, power supply and new energy power generation.

[0110] This embodiment proposes a highly symmetrical power module packaging structure design. It employs a three-segment, centrally symmetrical layout (i.e., the first conductive layer 12, the second conductive layer 13, and the fifth conductive layer 16 are spaced apart, forming a three-segment structure; the third conductive layer 52, the fourth conductive layer 53, and the sixth conductive layer 56 are also spaced apart, forming a three-segment structure) with two substrates (i.e., the first substrate 11 and the second substrate 51). This allows the first bridge arm structure 10 and the second bridge arm structure 50 to connect from the center of the power module to the AC terminal 40, the DC positive terminal 20, and the DC negative terminal 30, respectively, thereby achieving symmetrical current paths, reducing parasitic inductance, and improving current sharing performance. Simultaneously, the traces of the first bridge arm structure 10 and the second bridge arm structure 50 inside the power module are symmetrical along the central axis, and the layout of the first chip 14, the second chip 15, the third chip 54, and the fourth chip 55 is symmetrical along the central axis, ensuring consistent power loop lengths, optimizing heat distribution, and enhancing the reliability of the power module.

[0111] This embodiment introduces three terminal structures in the power terminal design, so that the DC positive terminal 20, DC negative terminal 30 and AC terminal 40 form a mountain-shaped terminal arrangement structure (the plane where the extension connecting plate 43 is located is the second preset plane, and in the direction from the first conductive layer 12 to the second conductive layer 13, the projection of the DC positive terminal 20, DC negative terminal 30 and AC terminal 40 on the second preset plane forms a mountain-shaped structure), which not only makes it suitable for terminal bonding process, but also reduces the parasitic inductance of the overall circuit of the power module.

[0112] Power modules in related technologies often employ multiple parallel circuits to achieve high current output. However, due to differences in the geometric length and electrical impedance of each circuit, the current distribution among the chips is uneven, which not only limits the expansion of the number of parallel chips but also reduces the overall reliability of the power module. This embodiment proposes a symmetrical layout of the first bridge arm structure 10 and the second bridge arm structure 50. Both the first bridge arm structure 10 and the second bridge arm structure 50 are led out from the center of the power module to the DC positive terminal 20, the DC negative terminal 30, and the AC terminal 40, ensuring that all parallel paths are highly consistent in structure and electrically, fundamentally improving current sharing performance.

[0113] In high-speed switching applications, minute parasitic inductance and resistance in the circuit can cause severe overshoot and oscillation, leading to increased switching losses and exacerbated electromagnetic interference. To address this issue, this embodiment employs a mountain-shaped structure in the power terminal design, ensuring that the current path on the first lateral connection portion 22 is opposite to the current path on the first conductive layer 12, thereby canceling out the influence of parasitic inductance. This design effectively reduces parasitic parameters and significantly improves switching speed and electromagnetic compatibility performance.

[0114] As current density continues to increase, uneven heat distribution and thermal expansion stress within the power module become key factors affecting its lifespan. Therefore, the power module in this embodiment redesigns the first substrate 11, the second substrate 51, the current traces, the heat dissipation structure, and the terminal layout to ensure uniform heat flow path distribution, thereby significantly improving the thermal management efficiency and cycle life of the power module.

[0115] In terms of manufacturing, the power terminal structure design in related technologies is complex. After the power module is prepared, it needs to be bent using appropriate tools. The process is complicated and mass production is difficult. The power module in this embodiment introduces a mountain-shaped terminal layout design. The terminal pins (i.e., the first vertical connection part 21, the second vertical connection part 41, the third vertical connection part 44, the fourth vertical connection part 23, the fifth vertical connection part 31, and the sixth vertical connection part 32) can be rapidly mass-produced by ultrasonic bonding. This improves the interconnection efficiency between the DC positive terminal 20 and the first conductive layer 12 and the third conductive layer 52, the AC terminal 40 and the second conductive layer 13 and the fourth conductive layer 53, and the DC negative terminal 30 and the fifth conductive layer 16 and the sixth conductive layer 56. It saves one welding process and improves the interconnection reliability between the DC positive terminal 20 and the first bridge arm structure 10 and the second bridge arm structure 50, the DC negative terminal 30 and the first bridge arm structure 10 and the second bridge arm structure 50, and the AC terminal 40 and the first bridge arm structure 10 and the second bridge arm structure 50. It also significantly improves production efficiency.

[0116] Through the aforementioned modular symmetrical structure, mountain-shaped terminal design, and ultrasonic bonding process, the power module of this embodiment systematically solves multiple bottlenecks in current sharing, parasitic parameters, thermal management, and manufacturing maintenance of medium and low voltage high current power semiconductor modules, providing a packaging solution with better performance and higher reliability for key fields such as power grids, rail transit, new energy power generation, and industrial drives.

[0117] This embodiment provides a medium- and low-voltage high-current power semiconductor module packaging structure with symmetrical structure, compact terminals, low parasitic parameters, excellent current sharing and thermal management performance, and convenient maintenance.

[0118] The power module in this embodiment has significant advantages in many aspects, including current sharing, parasitic parameters, thermal management, manufacturing process, and modular scalability. Specifically:

[0119] First, by symmetrically arranging the first bridge arm structure 10 and the second bridge arm structure 50, symmetry and consistency of the upper and lower bridge arms in the half-bridge topology are achieved, while the commutation path of each chip is made as equal as possible. This improves the uneven current distribution caused by loop asymmetry in traditional packaging, significantly enhancing the module's parallel expansion capability and operational reliability.

[0120] Secondly, a three-terminal, mountain-shaped structure is adopted, symmetrically arranging the first chip 14 and the third chip 54, the second chip 15 and the fourth chip 55, the first vertical connection 21 and the fourth vertical connection 23, the second vertical connection 41 and the third vertical connection 44, and the fifth vertical connection 31 and the sixth vertical connection 32. Simultaneously, the current direction of the first horizontal connection 22 is opposite to the current direction of the first conductive layer 12, thus canceling out parasitic inductance. Compared with existing technologies, this arrangement significantly shortens the signal and power circuit path, reduces parasitic inductance and resistance, thereby effectively reducing switching overshoot, oscillation, and electromagnetic interference, and significantly improving switching speed and energy efficiency.

[0121] Furthermore, in this embodiment, the first bridge arm structure 10 and the second bridge arm structure 50 of the power module are symmetrically arranged, which makes the heat flow and stress field inside the power module uniformly distributed. Thermal simulation shows that the average temperature difference of the power module is reduced by 13%, and the reliability is greatly enhanced.

[0122] Thanks to the overall symmetrical layout and integrated terminal design, the power module in this embodiment can be seamlessly applied to various circuit topologies such as half-bridge and full-bridge. At the same time, it is compatible with chips of different sizes and voltage and current levels that can be directly applied to the module without additional layout adjustments, which greatly improves the versatility of the power module.

[0123] The power device of this embodiment includes a power module, which is the power module described above. The parasitic inductance generated when the current flows through the first lateral connecting portion 22 and the parasitic inductance generated when the current flows through the first conductive layer 12 can cancel each other out, thereby reducing the parasitic inductance of the power circuit of the power module. The power device having the power module described above also has the advantages described above.

[0124] It should be noted that the power device in this embodiment can be a power transmission system, a power generation system, an inverter, or a converter. Of course, it can also be other devices or systems that use power modules.

[0125] In the description of this invention, it should be understood that "a plurality of" means two or more. Directional terms such as "front, back, up, down, left, right," "horizontal, vertical, perpendicular, horizontal," and "top, bottom" indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. These terms are used solely for the convenience of describing the invention and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the scope of protection of this invention. The directional terms "inner" and "outer" refer to the inner or outer contours relative to the outline of each component itself.

[0126] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0127] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore should not be construed as limiting the scope of protection of this invention.

[0128] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A power module, characterized in that, include: The first bridge arm structure (10) includes a first substrate (11), a first conductive layer (12), a second conductive layer (13), a first chip (14), and a second chip (15). The first conductive layer (12) and the second conductive layer (13) are disposed on the first substrate (11) at intervals. The first conductive layer (12) is provided with a first mounting area (121) and a second mounting area (122) at intervals. The first chip (14) is disposed in the first mounting area (121) and is conductively connected to the second conductive layer (13). The second chip (15) is disposed on the second conductive layer (13). The direction of the second mounting area (122) pointing to the first mounting area (121) is a first preset direction. The DC positive terminal (20) includes a first vertical connection portion (21) and a first horizontal connection portion (22) connected to the first vertical connection portion (21). The first vertical connection portion (21) is connected in the second mounting area (122). At least a portion of the structure of the first horizontal connection portion (22) is located directly above the first conductive layer (12) and extends along the first preset direction. The current direction of the first horizontal connection portion (22) is opposite to the first preset direction. The DC negative terminal (30) is electrically connected to the second chip (15); AC terminal (40) is electrically connected to the second conductive layer (13); The first transverse connecting part (22) includes a first transverse connecting plate (221), the first transverse connecting plate (221) includes a first plate body (2211), and the extension direction of the first plate body (2211) is set at an angle to the first preset direction; The first plate (2211) is provided with a first strip hole (22111), and the extension direction of the first plate (2211) is parallel to the extension direction L1 of the first strip hole (22111).

2. The power module according to claim 1, characterized in that, The first horizontal connecting plate (221) further includes a second plate (2212), which is connected between the first plate (2211) and the first vertical connecting part (21). The second plate (2212) is disposed on the side of the first plate (2211) and extends along the first preset direction.

3. The power module according to claim 1 or 2, characterized in that, The power module further includes a second bridge arm structure (50), which includes a second substrate (51), a third conductive layer (52), a fourth conductive layer (53), a third chip (54), and a fourth chip (55). The third conductive layer (52) and the fourth conductive layer (53) are spaced apart on the second substrate (51). The third chip (54) is disposed on the third conductive layer (52) and electrically connected to the fourth conductive layer (53). The fourth chip (55) is disposed on the fourth conductive layer (53). The first lateral connection portion (22) is connected to the third conductive layer (52). The DC negative terminal (30) is electrically connected to the fourth chip (55). The AC terminal (40) is connected to the fourth conductive layer (53).

4. The power module according to claim 3, characterized in that, The AC terminal (40) includes a second vertical connection portion (41) and a second horizontal connection portion (42). A third mounting area (531) and a fourth mounting area (532) are spaced apart on the fourth conductive layer (53). The direction of the third mounting area (531) pointing to the fourth mounting area (532) is a second preset direction. The second vertical connection portion (41) is connected in the third mounting area (531). The second vertical connection portion (41) is connected to the first end of the second horizontal connection portion (42). At least a part of the structure of the second horizontal connection portion (42) is located directly above the fourth conductive layer (53). At least a part of the structure of the second horizontal connection portion (42) extends along the second preset direction. The second end of the second horizontal connection portion (42) is connected to an external conductive structure. The current direction of the second horizontal connection portion (42) is opposite to the second preset direction.

5. The power module according to claim 4, characterized in that, The second transverse connecting part (42) includes a second transverse connecting plate (421), the second transverse connecting plate (421) includes a third plate body (4211) and a fourth plate body (4212), the third plate body (4211) is connected between the second vertical connecting part (41) and the fourth plate body (4212), the external conductive structure is connected to the fourth plate body (4212), and the fourth plate body (4212) is disposed on the side of the third plate body (4211) away from the first bridge arm structure (10).

6. The power module according to claim 5, characterized in that, The AC terminal (40) also includes an extension connecting plate (43) connecting the external conductive structure and the fourth plate (4212). The extension connecting plate (43) is disposed on the side of the fourth plate (4212), and the corner of the fourth plate (4212) away from the extension connecting plate (43) is a chamfered part (42121).

7. The power module according to claim 5, characterized in that, The third plate (4211) is provided with a second strip hole (42111), and / or the fourth plate (4212) is provided with a third strip hole (42122).

8. The power module according to claim 5, characterized in that, The AC terminal (40) also includes a third vertical connection part (44) connected to the second conductive layer (13), and the second horizontal connection plate (421) also includes a fifth plate body (4213), which is disposed on the third plate body (4211), and the third vertical connection part (44) is connected to the fifth plate body (4213).

9. The power module according to claim 4, characterized in that, The first bridge arm structure (10) and the second bridge arm structure (50) are symmetrically arranged. The AC terminal (40) further includes a third vertical connection part (44), which is connected between the second horizontal connection part (42) and the second conductive layer (13). The DC positive terminal (20) further includes a fourth vertical connection part (23), which is connected between the third conductive layer (52) and the first horizontal connection part (22). In the direction from the first bridge arm structure (10) to the second bridge arm structure (50), the first vertical connection part (21), the second vertical connection part (41), the third vertical connection part (44), the fourth vertical connection part (23), and the DC negative terminal (30) are all located between the second chip (15) and the fourth chip (55).

10. The power module according to claim 3, characterized in that, The first bridge arm structure (10) further includes a fifth conductive layer (16), the second chip (15) is electrically connected to the fifth conductive layer (16), the DC negative terminal (30) includes a fifth vertical connection portion (31) disposed on the fifth conductive layer (16), and / or, the second bridge arm structure (50) further includes a sixth conductive layer (56), the fourth chip (55) is electrically connected to the sixth conductive layer (56), the DC negative terminal (30) includes a sixth vertical connection portion (32) disposed on the sixth conductive layer (56).

11. The power module according to claim 1 or 2, characterized in that, The second conductive layer (13) has a clearance via (131) in the middle. The power module also includes a gate conductive layer (60) and a first conductive connector (70). The gate conductive layer (60) is disposed on the first substrate (11) and located in the clearance via (131). The first conductive connector (70) connects the gate conductive layer (60) and the second chip (15).

12. The power module according to claim 1 or 2, characterized in that, The power module further includes a second conductive connector (80), which connects the first chip (14) and the second conductive layer (13).

13. The power module according to claim 1 or 2, characterized in that, The power module also includes a base plate (90), the first substrate (11) is disposed on the base plate (90), and the power module also includes a gate terminal (100) disposed on the base plate (90), the gate terminal (100) being controlled connected to the first chip (14).

14. An electrical device, comprising a power module, characterized in that, The power module is the power module according to any one of claims 1 to 13.

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