Solar cell edge passivation equipment and passivation method

Abstract

The invention discloses solar cell edge passivation equipment and a passivation method, the passivation equipment comprises an outer cavity and an inner cavity which are nested, and a cell clamp carrier which is arranged in the inner cavity and is used for clamping a cell, and the outer cavity is provided with an extraction opening and an air inlet; a coil is arranged around the periphery of the inner cavity, and the coil is connected with an external radio frequency power supply through an RF feed-in electrode penetrating through the bottom of the outer cavity; after a cut battery piece is placed in the piece clamp carrier, the cut face of the battery piece is adjusted to be right opposite to the coil, process gas enters the inner cavity from the gas inlet through the flow uniformizing plate, and an external power source achieves coil conduction through the RF feed-in electrode, so that the process gas is ionized to form uniform plasmas; and a passivation film is formed on the cutting surface of the battery piece under the action of the plasma. According to the passivation equipment disclosed by the invention, active reaction groups are preferentially concentrated near the cutting surface of the battery piece to generate a deposition reaction, so that a high-quality passivation film is selectively and efficiently deposited only in the edge cutting area of the battery piece.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically to an edge passivation device and passivation method for solar cells. Background Technology

[0002] Half-cell technology, by laser-cutting standard solar cells, effectively reduces internal current and resistance losses in modules, thereby improving output power and reliability. It has become the most mainstream and cost-effective solution for enhancing module performance. However, while laser cutting brings gains, it also creates entirely new, unpassivated cell edges. These areas become highly efficient recombination centers for charge carriers, directly leading to voltage and current losses and limiting the full potential of half-cell technology. This edge recombination problem is particularly prominent for next-generation high-efficiency cells such as TOPCon, HJT, and XBC, which have extremely high surface sensitivity.

[0003] Therefore, specialized passivation treatment of the cut edges of half-cell batteries is a crucial step in releasing their full performance and ensuring long-term stability. However, the industrial application of this technology still faces key challenges: traditional coating equipment is designed for deposition across the entire battery surface, making it difficult to achieve efficient and uniform selective localized coating. Developing dedicated edge passivation equipment and processes that can be seamlessly integrated with existing production lines, ensuring passivation film quality while balancing production capacity and cost-effectiveness, has become a critical technological bottleneck that the industry urgently needs to overcome.

[0004] Among numerous cutting-edge technologies, atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD), as two passivation methods capable of low-temperature processing, are currently the most promising technologies due to limitations in process temperature. However, they exhibit significant differences in industrial applications. ALD technology achieves theoretically superior field-effect passivation by depositing ultra-thin alumina films with excellent conformability on the cut surface. However, ALD technology requires high-temperature annealing above 450°C to achieve optimal passivation, posing a potential risk of damage to the cells being processed. Its self-limiting atomic layer deposition characteristics result in a slow deposition rate, making it difficult to meet the demands of large-scale mass production. More importantly, existing technologies all deposit directly on the damaged layer formed by laser cutting, failing to fundamentally address the limitations imposed by underlying lattice defects on the passivation effect. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to address the shortcomings of existing passivation equipment in that it cannot efficiently and in batches selectively coat only the cut surfaces. The present invention provides a solar cell edge passivation equipment and passivation method that is compact in structure, easy to operate, and can achieve high-efficiency and high-quality passivation coating.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: A solar cell edge passivation device includes a nested outer cavity and an inner cavity, and a cell clamping carrier disposed in the inner cavity for holding the solar cells. The outer cavity is provided with an exhaust port and an intake port. The intake port is connected to an external gas source through an intake pipe, and the exhaust port is connected to an external vacuum system. A coil is arranged around the outer periphery of the inner cavity. The coil is connected to an external radio frequency power supply through an RF feed electrode penetrating the bottom of the outer cavity. When the cut solar cell is placed in the cell clamping carrier, the cut surface of the solar cell is adjusted to face the coil. Process gas enters the inner cavity through the intake port. The external radio frequency power supply makes the coil conductive through the RF feed electrode, so that the process gas is ionized to form plasma. Under the action of plasma, a thin film with a passivation effect is formed on the cut surface of the solar cell.

[0007] As a further improvement of the present invention, a rotating heating platform is provided at the bottom of the inner cavity, and the plate clamp carrier is placed on the rotating heating platform.

[0008] As a further improvement of the present invention, the heating temperature of the rotary heating platform is 50 to 500°C, and the rotation speed of the rotary heating platform is 0 to 60 mm / s.

[0009] As a further improvement of the present invention, the top of the outer cavity is provided with a cavity cover, the air inlet is provided on the cavity cover, the cavity cover is connected to the outer cavity by a hinge, and a cylinder for driving the cavity cover to open and close automatically is provided on the outside of the outer cavity.

[0010] As a further improvement of the present invention, a flow equalization plate is provided on the upper part of the inner cavity. The flow equalization plate is connected to the air inlet, and the gas is introduced into the flow equalization plate from the air inlet and then enters the inner cavity.

[0011] As a further improvement of the present invention, an observation window is provided on the side of the outer cavity; a bias power supply is provided at the bottom of the outer cavity.

[0012] As a general technical concept, the present invention also provides a passivation method based on the above-described solar cell edge passivation device, comprising the following steps: Step S1: Stack the cut solar cells neatly into the cell clamp carrier, place the cell clamp carrier on the rotary heating platform, with the cut surface of the solar cells facing the coil, and evacuate the inner cavity. Step S2: Remove the cutting damage layer and surface contaminants of the battery cell by physical etching and / or chemical etching to achieve in-situ cleaning of the cutting edge; Step S3: Deposit silicon nitride, silicon oxide, amorphous silicon, or a mixture thereof as a passivation layer on the cut surface of the solar cell; Step S4: After filling the inner cavity with protective gas to atmospheric pressure, remove the cell holder carrier that holds the battery cells and take out the battery cells for testing and sorting.

[0013] As a further improvement of the present invention, in step S2, a mixture of Ar and NF3 gas is used for in-situ cleaning of the cutting edge. The flow ratio of Ar to NF3 is 1:1 to 10, the pressure is 10 to 100 Pa, the temperature is 25 to 400°C, the radio frequency discharge frequency is 13.56 MHz, the discharge power is 100 to 1000 W, and the rotation speed is 10 to 60 mm / s.

[0014] As a further improvement of the present invention, in step S3, when depositing silicon nitride as a passivation layer, the flow ratio of silane to ammonia or nitrous oxide is 1:2 to 20, the pressure is 10 to 100 Pa, the temperature is 150 to 400°C, the discharge power is 50 to 1000 W, and the rotation speed is 10 to 60 mm / s.

[0015] As a further improvement of the present invention, in step S3, when depositing amorphous silicon as a passivation layer, the flow ratio of silane to hydrogen is 1:2 to 20, the pressure is 10 to 100 Pa, the temperature is 150 to 400°C, the discharge power is 50 to 1000 W, and the rotation speed is 10 to 60 mm / s.

[0016] Compared with the prior art, the advantages of the present invention are as follows: 1. The solar cell edge passivation equipment and method of this invention features an innovative structural design compared to traditional plasma-enhanced chemical vapor deposition (PVD) coating equipment. The core of this design involves arranging ICP discharge coils around the perimeter of an inner cavity and placing a bias power supply at the bottom of the outer cavity, thereby generating a unique spatial plasma field within the cavity that is strong around the edges and weak in the center. During edge coating, a wafer holder containing the solar cell is placed within the space encircled by the coils. The design of the wafer holder exposes the cut surface of the cell to the cavity and directly faces the strong plasma region. Through this design, active reactive groups are preferentially concentrated near the cut surface for deposition, allowing for selective and efficient deposition of a high-quality passivation film only in the cut area of ​​the cell edge. This effectively saves gas resources, reduces deposition temperature, repairs cutting damage, reduces edge recombination, and restores and improves the performance of the solar cell.

[0017] 2. The solar cell edge passivation equipment and method of the present invention adopts a synergistic process route of "dry etching pretreatment + space-confined PECVD in-situ deposition". First, dry etching is performed on the cut edge using fluorine-based plasma to precisely remove the micron-level damage layer and expose the complete crystal structure. Then, a special plasma field generated by a space-encircling coil is used to rapidly deposit a high-quality silicon nitride-based passivation film at a low temperature of ≤200℃. The present invention achieves optimization of the entire process from damage removal to perfect passivation.

[0018] 3. The solar cell edge passivation equipment and passivation method of the present invention avoid thermal damage to sensitive cell structures by adopting a low-temperature process; the rapid deposition characteristics of PECVD increase the production capacity several times compared to ALD; the innovative integrated etching-passivation treatment reduces the recombination rate from the source, providing the industry with an industrialization path that combines excellent passivation effect, high production capacity and low cost advantages, and is expected to promote the further development of high-efficiency battery technology. Attached Figure Description

[0019] Figure 1 This is a top view schematic diagram of the solar cell edge passivation device in a specific embodiment of the present invention; Figure 2 This is a schematic diagram of the cross-sectional structure of the solar cell edge passivation device in a specific embodiment of the present invention; Figure 3 This is a schematic diagram of the structural principle of the plate clamp carrier in a specific embodiment of the present invention; Figure 4 This is a schematic diagram of the process for passivating the edge of a solar cell in a specific embodiment of the present invention.

[0020] Legend: 1. Outer cavity; 2. Inner cavity; 3. Hinge; 4. Cylinder; 5. Inlet pipe; 6. Plate clamp carrier; 61. Upper cover plate; 62. Lower cover plate; 63. Upper clamp plate; 64. Lower clamp plate; 65. Fixing bolt; 7. Observation window; 8. RF feed electrode; 9. Coil; 10. Flow equalizer; 11. Air extraction port; 12. Cavity cover; 13. Air inlet; 14. Rotary heating platform. Detailed Implementation

[0021] The present invention will be further described below with reference to the accompanying drawings and specific preferred embodiments, but this does not limit the scope of protection of the present invention.

[0022] In the description of this invention, it should be understood that the terms "side", "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0023] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more unless otherwise explicitly specified.

[0024] Example 1 like Figure 1 and Figure 2 As shown, the solar cell edge passivation device of the present invention includes a nested outer cavity 1 and an inner cavity 2, and a cell clamping carrier 6 disposed in the inner cavity 2 for holding the solar cells. In this embodiment, the inner cavity 2 is a process cavity for performing the deposition reaction, and the outer cavity 1 is a protective cavity for carrying cooling water channels, coils, and providing vacuum isolation. This arrangement effectively isolates process contamination, enhances cavity cooling efficiency, and improves the stability and safety of equipment operation. Specifically, the outer cavity 1 is made of metal material. The bottom of the outer cavity 1 is provided with an exhaust port 11, and the top of the outer cavity 1 is provided with an air inlet 13. The air inlet 13 is connected to an external air source through multiple air inlet pipes 5 to deliver process gas or protective gas to the inner cavity 2. The exhaust port 11 is connected to an external vacuum system to achieve vacuuming of the inner cavity 2. In this embodiment, more than 8 types of pure gases and their mixtures can be introduced, including conventional gases such as NF3 / Cl2 / N2 / H2 / SiH4 / N2O / NH3 / Ar. Among them, NF3 and Cl2 can be used for in-situ self-cleaning of the cavity and to support the cavity's lifespan and cleanliness. They can also remove the mechanical damage layer from the battery's cut surface.

[0025] The inner cavity 2 is made of quartz, and a coil 9 is arranged around its outer perimeter. The coil 9 is connected to an external radio frequency power supply through an RF feed electrode 8 that passes through the bottom of the outer cavity 1. The coil 9 is coaxially arranged around the four side walls of the inner cavity 2, forming a "space-encircling ICP discharge coil". When energized, it forms a "space-encircling plasma field". The shape of the discharge coil can match the contour of the wafer holder 6, ensuring that the cut edge of the battery cell on the wafer holder 6 is aligned with the area of ​​highest plasma intensity. Furthermore, the coil 9 is a hollow copper coil, which allows cooling water to be circulated inside the coil 9 to achieve rapid cooling of the inner cavity 2.

[0026] like Figure 3As shown, the cell clamping carrier 6 consists of an upper cover plate 61, a lower cover plate 62, an upper clamping plate 63, a lower clamping plate 64, and fixing bolts 65. The upper clamping plate 63 and the lower clamping plate 64 are positioned between the upper cover plate 61 and the lower cover plate 62, and the four vertices of the upper cover plate 61 and the lower cover plate 62 are locked together by the fixing bolts 65. The solar cells are placed between the upper clamping plate 63 and the lower clamping plate 64, with the front and back sides of the solar cells tightly covered by the clamping plates, leaving only the cut sides of the solar cells exposed for passivation. Figure 3 The upper and lower clamps expose four sides, so the four cut sides of the battery cell can be processed simultaneously. For battery cells of different sizes and with different numbers of cut sides, only the upper and lower clamps of the corresponding size and type need to be replaced.

[0027] In this embodiment, the wafer clamp carrier 6 is made of high-precision, heat-resistant insulating material. Through a unique "clip" positioning system, it can securely clamp the battery cells with a minimal contact area while precisely exposing the edges requiring coating. By flexibly configuring the clamping position and orientation of the wafer clamp carrier 6, simultaneous exposure of one, two (opposite), three, or even four edges of the battery cells can be achieved. When the wafer clamp carrier 6 enters the "space-encircling plasma field," all exposed cut surfaces can simultaneously complete the deposition of a high-quality passivation film in a single process cycle. This revolutionizes the traditional "one-cell," "one-edge" processing mode into "batch," "multi-edge" parallel processing, increasing gas utilization by over 50% and reducing overall process time by over 60%. Furthermore, the modular carrier and clamp design provides the invention with advanced modifiability and scalability, seamlessly adapting to future smaller-sized and differently shaped battery technologies without requiring major modifications to the core reaction chamber.

[0028] After the cut solar cells are stacked and placed into the wafer holder 6, the cut surfaces of the cells are aligned with the coil 9. Process gas enters the inner cavity 2 through the inlet 13. An external radio frequency power supply, via the RF feed electrode 8, enables the coil 9 to conduct electricity, generating an alternating electric field. This ionizes the process gas, forming plasma. Under the influence of the plasma, a passivated thin film is formed on the cut surfaces of the solar cells. Depending on the gases introduced and their order, films such as amorphous silicon, silicon oxide, silicon nitride, silicon oxynitride, and their hybrid stacks can be deposited. The film thickness is determined by process parameters such as discharge power, gas flow rate, temperature, pressure, and time.

[0029] In this embodiment, a rotating heating platform 14 is provided at the bottom of the inner cavity 2, and the wafer clamp carrier 6 is placed on the rotating heating platform 14. For future potentially smaller battery module technologies, the wafer clamp design allows for flexible simultaneous deposition of single-sided, double-sided, triple-sided, or even quadrilateral film layers, thereby achieving single-pass multi-sided coating technology, significantly improving gas utilization, reducing process time, and providing advanced design flexibility.

[0030] Furthermore, the heating temperature of the rotary heating platform 14 is 50–500°C, and the rotation speed of the rotary heating platform 14 is 0–60 mm / s to ensure the uniformity of the coating on the side of the battery cell. A bias power supply is provided at the bottom of the outer cavity 1 to ensure the density of the film layer and the passivation quality.

[0031] In this embodiment, the top of the outer cavity 1 is provided with a cavity cover 12, the air inlet 13 is provided on the cavity cover 12, the cavity cover 12 is connected to the outer cavity 1 by a hinge 3, and the outer side of the outer cavity 1 is provided with a cylinder 4 for driving the cavity cover 12 to open and close automatically.

[0032] In this embodiment, a flow equalization plate 10 is provided inside the cavity cover 12. The flow equalization plate 10 is connected to the air inlet 13, and the gas is introduced into the flow equalization plate 10 through the air inlet 13 and then enters the inner cavity 2. A multi-path, independently controllable gas path system is designed to address the characteristics of the reactive gases (such as silane, ammonia, nitrous oxide, etc.). The gas is uniformly mixed and injected through the microporous flow equalization plate arranged inside the cavity cover 12, thereby ensuring the uniform distribution of active groups in the edge region. Simultaneously, the system integrates high-sensitivity pressure and flow sensors, linked with a safety interlock device, to ensure that the gas path can be quickly cut off and inert protective gas introduced when an anomaly is detected, fundamentally eliminating safety hazards. In this embodiment, through the spatially surrounding electromagnetic field configuration, a special spatial plasma distribution with "strong edges and weak center" is actively generated inside the cavity, providing a physical basis for selectively and efficiently depositing only at the battery edge.

[0033] In this embodiment, an observation window 7 is provided on the side of the outer cavity 1 to facilitate observation of the process status in the inner cavity 2.

[0034] like Figure 4 As shown, in this embodiment, a passivation method based on the above-mentioned solar cell edge passivation device is also provided, including the following steps: Step S1: Stack the cut battery wafers neatly into the wafer holder 6, ensuring the cut surface is exposed on the outside, while the other three sides and surface are enclosed within the wafer holder 6. Then, lock the wafer holder 6 to prevent plating wrapping. Place the wafer holder 6 in the fixed position on the rotary heating platform 14, with the cut surface of the battery wafer facing the coil 9. Evacuate the inner cavity 2. It is understandable that to prevent dust, organic matter, and other contaminants inside the cavity from reducing the film quality and affecting the passivation effect, the cavity can be cleaned before placing the battery wafers in. This primarily cleans the silicon-containing film adhering to the inner wall of the quartz cavity and the flow equalization plate after multiple processing cycles, rather than being a necessary operation for every process.

[0035] Step S2: Chemical etching removes the damaged layer and surface contaminants from the cut edges of the solar cells, achieving in-situ cleaning of the cut edges and ensuring the cleanliness of the solar cells and the lifespan of the cavity. Specifically, a mixture of Ar and NF3 gas is used for in-situ cleaning of the cut edges. The flow ratio of Ar to NF3 is 1:1, the pressure is 30 Pa, the temperature is 50℃, the radio frequency discharge frequency is 13.56 MHz, the discharge power is 150 W, the rotation speed is 30 mm / s, and the discharge time is 20 s. During the process, mixed gas flow can also be used to achieve both physical and chemical etching effects.

[0036] After each batch or several batches of processes are completed, the system automatically introduces a fluorine-based cleaning gas, such as NF3. When NF3 is excited by the energized coil 9, it forms a high-density plasma, which performs in-situ dry cleaning of the inner wall of the inner cavity 2 and the wafer holder 6 without residue or damage. This effectively avoids particulate contamination caused by film peelings, ensures the cleanliness of each batch of solar cells, and extends the preventive maintenance cycle of the cavity by several times.

[0037] Step S3: When depositing amorphous silicon as a passivation layer on the cut surface of the battery cell, the flow ratio of silane to hydrogen is 1:4, the pressure is 50 Pa, the temperature is 190℃, the discharge power is 295 W, the bias power is 100 W, and the discharge time is 120 s.

[0038] In other embodiments, silicon nitride may also be deposited as a passivation layer: the flow ratio of silane to ammonia or nitrous oxide is 1:2 to 20, the pressure is 10 to 100 Pa, the temperature is 150 to 400°C, the discharge power is 50 to 1000 W, and the rotation speed is 10 to 60 mm / s. It is understood that silicon oxide may also be deposited as a passivation layer.

[0039] By working in tandem with an adaptive impedance matching network and a closed-loop water-cooled temperature control system, the space-wound coil maintains extremely stable and uniform glow discharge during long-term operation, and can compensate for plasma impedance changes caused by fluctuations in process parameters in real time, thereby ensuring high uniformity and repeatability of edge coating.

[0040] Step S4: After filling the inner cavity 2 with nitrogen to atmospheric pressure, remove the cell holder 6 that holds the battery cells and take out the battery cells for testing and sorting.

[0041] Table 1. Comparison of battery efficiency before and after passivation

[0042] Comparing the battery efficiency before and after passivation, by depositing amorphous silicon as a passivation layer, the battery efficiency was improved by 0.20%, while the on-state voltage, current, and filling uniformity were significantly improved, mainly due to the significant improvement in filling. This indicates that the edge passivation film structure prepared in this embodiment has a better passivation effect on the cut edge.

[0043] In this embodiment, the unique structural design of the edge passivation device enables the sequential deposition of different functional thin films on the edge of the battery by switching reaction gases at a low temperature of ≤200℃, forming a multi-film stacked structure. The entire process maintains a low temperature throughout, ensuring compatibility with temperature-sensitive high-efficiency battery structures such as TOPCon, HJT, and XBC, and preventing their intrinsic performance from deteriorating due to heat treatment.

[0044] Example 2 In this embodiment, the edge passivation of the solar cell is performed using the solar cell edge passivation device in Embodiment 1, including the following steps: Step S1: Stack the cut battery cells neatly into the cell holder 6, place the cell holder 6 on the rotary heating platform 14, with the cut surface of the battery cells facing the coil 9, and evacuate the inner cavity 2.

[0045] Step S2: Remove the damaged layer and surface contaminants from the cut cell by chemical etching to achieve in-situ cleaning of the cut edge. Specifically, a mixture of Ar and NF3 gas is used for in-situ cleaning of the cut edge. The flow ratio of Ar to NF3 is 1:1, the pressure is 30 Pa, the temperature is 50℃, the radio frequency discharge frequency is 13.56 MHz, the discharge power is 150 W, the rotation speed is 30 mm / s, and the discharge time is 20 s.

[0046] Step S3: When depositing amorphous silicon as a passivation layer on the cut surface of the solar cell, the flow ratio of silane to hydrogen is 1:4, the pressure is 50 Pa, the temperature is 190℃, the discharge power is 295 W, the bias power is 100 W, and the discharge time is 120 s. Then, the second silicon nitride film is deposited: the flow ratio of silane to ammonia is 1:4, the pressure is 40 Pa, the temperature is 200℃, the rotation speed is 20 mm / s, the discharge power is 180 W, the bias power is 60 W, and the discharge time is 30 s.

[0047] Step S4: After filling the inner cavity 2 with nitrogen to atmospheric pressure, remove the cell holder 6 that holds the battery cells and take out the battery cells for testing and sorting.

[0048] Table 2. Comparison of battery efficiency before and after passivation

[0049] Comparing the battery efficiency before and after passivation, by depositing amorphous silicon as the passivation layer and silicon nitride as the external protective layer, the battery efficiency was improved by 0.21%, while the on-state voltage, current, and filling uniformity were significantly improved, mainly due to the significant improvement in filling. This indicates that the edge passivation film structure prepared in this embodiment has a better passivation effect on the cut edge.

[0050] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A passivation device for the edge of a solar cell, characterized in that, The device includes an outer cavity (1) and an inner cavity (2) nested together, and a clamping carrier (6) for holding the battery cells in the inner cavity (2). The outer cavity (1) is provided with an exhaust port (11) and an air inlet (13). The air inlet (13) is connected to an external air source through an air inlet pipe (5), and the exhaust port (11) is connected to an external vacuum system. A coil (9) is arranged around the outer periphery of the inner cavity (2). The coil (9) is connected to an external radio frequency power supply through an RF feed electrode (8) that passes through the bottom of the outer cavity (1). When the cut battery cells are placed in the clamping carrier (6), the cut surface of the battery cells is adjusted to face the coil (9). The process gas enters the inner cavity (2) through the air inlet (13). The external radio frequency power supply makes the coil (9) conductive through the RF feed electrode (8), so that the process gas is ionized to form plasma. The cut surface of the battery cells forms a thin film with a passivation effect under the action of plasma.

2. The solar cell edge passivation device according to claim 1, characterized in that, The bottom of the inner cavity (2) is provided with a rotating heating platform (14), and the plate clamp carrier (6) is placed on the rotating heating platform (14).

3. The solar cell edge passivation device according to claim 2, characterized in that, The heating temperature of the rotary heating platform (14) is 50 to 500°C, and the rotation speed of the rotary heating platform (14) is 0 to 60 mm / s.

4. The solar cell edge passivation apparatus according to any one of claims 1 to 3, characterized in that, The outer cavity (1) is provided with a cavity cover (12) at the top, and the air inlet (13) is provided on the cavity cover (12). The cavity cover (12) is connected to the outer cavity (1) by a hinge (3), and a cylinder (4) is provided on the outside of the outer cavity (1) for driving the cavity cover (12) to open and close automatically.

5. The solar cell edge passivation device according to claim 4, characterized in that, The cavity cover (12) is provided with a flow equalization plate (10) on the inner side. The flow equalization plate (10) is connected to the air inlet (13). Gas is introduced into the flow equalization plate (10) through the air inlet (13) and then enters the inner cavity (2).

6. The solar cell edge passivation apparatus according to any one of claims 1 to 3, characterized in that, The outer cavity (1) is provided with an observation window (7) on its side; the bottom of the outer cavity (1) is provided with a bias power supply.

7. A passivation method based on the solar cell edge passivation device according to any one of claims 1 to 6, characterized in that, Includes the following steps: Step S1: Stack the cut battery cells neatly into the cell clamp carrier (6), place the cell clamp carrier (6) on the rotating heating platform (14), with the cut surface of the battery cells facing the coil (9), and evacuate the inner cavity (2). Step S2: Remove the cutting damage layer and surface contaminants of the battery cell by physical etching and / or chemical etching to achieve in-situ cleaning of the cutting edge; Step S3: Deposit silicon nitride, silicon oxide, amorphous silicon, or a mixture thereof as a passivation layer on the cut surface of the solar cell; Step S4: After filling the inner cavity (2) with protective gas to atmospheric pressure, take out the cell holder (6) that holds the battery cells and take out the battery cells for testing and sorting.

8. The passivation method according to claim 7, characterized in that, In step S2, a mixture of Ar and NF3 gas is used for in-situ cleaning of the cutting edge. The flow ratio of Ar to NF3 is 1:1 to 10, the pressure is 10 to 100 Pa, the temperature is 25 to 400℃, the radio frequency discharge frequency is 13.56 MHz, the discharge power is 100 to 1000 W, and the rotation speed is 10 to 60 mm / s.

9. The passivation method according to claim 7, characterized in that, In step S3, when depositing silicon nitride as a passivation layer, the flow ratio of silane to ammonia or nitrous oxide is 1:2 to 20, the pressure is 10 to 100 Pa, the temperature is 150 to 400 °C, the discharge power is 50 to 1000 W, and the rotation speed is 10 to 60 mm / s.

10. The passivation method according to claim 7, characterized in that, In step S3, when depositing amorphous silicon as a passivation layer, the flow ratio of silane to hydrogen is 1:2 to 20, the pressure is 10 to 100 Pa, the temperature is 150 to 400 °C, the discharge power is 50 to 1000 W, and the rotation speed is 10 to 60 mm / s.

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