Perovskite crystalline silicon tandem cell and preparation method and application thereof

Abstract

The application provides a perovskite crystalline silicon laminated cell and a preparation method and application thereof, and relates to the technical field of solar cells.The perovskite crystalline silicon laminated cell comprises a perovskite top cell, an intermediate interconnection layer and a crystalline silicon bottom cell, and the intermediate interconnection layer is prepared by embedding an Ag metal grid on the surface of a TCO base, and then depositing a TCO layer on the TCO base with the embedded Ag metal grid to form an integrated structure in which the TCO base wraps the Ag metal grid, thereby obtaining the intermediate interconnection layer.The Ag metal grid embedded in the TCO composite layer as the interconnection layer of the laminated cell can enhance the adhesion of the interconnection layer, guarantee the stability and reliability of the cell structure, and the overall structure of the intermediate interconnection layer is also helpful to reduce the electrical loss and enhance the optical performance.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and in particular to a perovskite-silicon tandem solar cell, its preparation method, and its application. Background Technology

[0002] Monocrystalline silicon solar cells currently dominate the photovoltaic market due to their high conversion efficiency and low cost. Their actual efficiency has exceeded 27%, approaching the theoretical limit of 29.4%. To overcome this limitation, tandem solar cells have become an important development direction. This technology effectively reduces heat loss by stacking absorber layers with different band gaps, achieving a theoretical maximum efficiency of 43%. Perovskite materials are widely considered ideal top-cell materials in tandem solar cells due to their ease of fabrication, low cost, and tunable band gap. The interconnect layer is the "functional hub" in perovskite / crystalline silicon tandem solar cells, playing a crucial role in the overall performance of the cell. The current mainstream interconnect layer structure is "TCO composite layer + independent Ag metal mesh + TCO composite layer". The TCO layer (such as ITO or AZO) provides optical transparency, while the independent Ag mesh reduces lateral resistance. In existing technologies, the TCO composite layer and metal mesh are simply physically stacked together to interconnect perovskite and crystalline silicon solar cells. Existing interconnect layer technologies face two major bottlenecks: First, there is a contradiction between optical and electrical performance; for example, increasing the width of the metal mesh to reduce resistance leads to increased light-blocking efficiency. Second, the independent Ag mesh and TCO layer are physically stacked, resulting in insufficient adhesion between the metal mesh and the TCO layer, potentially leading to detachment and insufficient interface stability. Furthermore, the fabrication of the TCO interconnect layer is generally done via magnetron sputtering, which can easily damage the cell film. A separate metal layer (such as continuous film sputtering or mesh lithography) is required before bonding it to the TCO layer, resulting in numerous steps and the potential introduction of interface contaminants (such as photoresist residue and sputtering dust).

[0003] Prior art CN115312563A discloses a two-terminal tandem solar cell based on a metal mesh interconnect and its fabrication method, including a perovskite bottom cell, a metal mesh interconnect layer, and an organic top cell. The metal mesh interconnect layer is deposited on the perovskite bottom cell, and the organic top cell is bonded to the metal mesh interconnect layer. This prior art directly fabricates the metal mesh interconnect layer on the perovskite cell, mechanically stacks the organic top cell onto the perovskite bottom cell, and addresses the issue of insufficient interface stability in the intermediate interconnect layer. Summary of the Invention

[0004] This invention addresses the shortcomings of current perovskite-silicon tandem solar cells, such as high light absorption loss, insufficient interface stability, and complex manufacturing processes. It provides a perovskite-silicon tandem solar cell whose interconnect layer is prepared by a specific method, significantly improving the mechanical stability, optical performance, and electrical performance of the interconnect layer.

[0005] Another objective of this invention is a method for preparing a perovskite-silicon tandem solar cell.

[0006] Another objective of this invention is to provide an application of perovskite-silicon tandem solar cells in the field of photovoltaic power generation.

[0007] In a first aspect, the present invention protects a perovskite-silicon tandem solar cell, comprising a perovskite top cell, an intermediate interconnect layer, and a crystalline silicon bottom cell, wherein the intermediate interconnect layer is prepared by the following method:

[0008] An Ag metal mesh is embedded on the surface of a TCO substrate, and then another TCO layer is deposited to form an integrated structure in which the TCO substrate encapsulates the Ag metal mesh, thus preparing an intermediate interconnect layer.

[0009] According to the perovskite-silicon tandem solar cell protected by the present invention, preferably, the thickness of the Ag metal mesh in the intermediate interconnect layer is 10~30nm and the linewidth is 15~30nm.

[0010] According to the perovskite-silicon tandem solar cell protected by the present invention, preferably, the surface area ratio of the Ag metal mesh of the intermediate interconnect layer is 2 to 6% of the surface area of ​​the TCO substrate.

[0011] According to the perovskite-silicon tandem solar cell protected by the present invention, preferably, the shape of the Ag metal mesh in the intermediate interconnect layer is a star-shaped grid.

[0012] According to the perovskite-silicon tandem solar cell protected by the present invention, preferably, the thickness of the intermediate interconnect layer is 10~300nm.

[0013] According to the perovskite-silicon tandem solar cell protected by the present invention, preferably, the specific operation of embedding an Ag metal mesh on the surface of the TCO substrate is as follows:

[0014] A magnetron sputtering process is used to deposit an Ag metal mesh on the surface of a TCO substrate using a mask, followed by annealing at a temperature of 400-700°C for 5-10 minutes to obtain a TCO substrate with an embedded Ag metal mesh.

[0015] Secondly, the present invention also specifically protects a method for preparing a perovskite-silicon tandem solar cell, comprising the following steps:

[0016] S1. An Ag metal mesh is embedded on the surface of a TCO substrate, and another TCO layer is deposited to form an integrated structure in which the TCO substrate encapsulates the Ag metal mesh, thus preparing an intermediate interconnect layer;

[0017] S2. Apply UV-curable adhesive to both the upper surface of the perovskite top cell and the upper surface of the crystalline silicon bottom cell. Place the intermediate interconnect layer between the perovskite top cell and the crystalline silicon bottom cell, and laminate while simultaneously curing under UV irradiation to obtain a perovskite-crystalline silicon tandem cell.

[0018] According to the method for preparing a perovskite-silicon tandem solar cell protected by the present invention, preferably, the Ag metal mesh has an embedding depth of 15~35nm and a linewidth of 15~30nm.

[0019] According to the method for preparing a perovskite-silicon tandem solar cell protected by the present invention, preferably, the surface area ratio of the Ag metal mesh is 2-6% of the surface area of ​​the TCO substrate.

[0020] According to the method for preparing a perovskite-silicon tandem solar cell protected by the present invention, preferably, the shape of the Ag metal mesh is a star-shaped grid.

[0021] According to the method for preparing a perovskite-silicon tandem solar cell protected by the present invention, preferably, the thickness of the intermediate interconnect layer is 10~300nm.

[0022] According to the method for preparing a perovskite-silicon tandem solar cell protected by the present invention, preferably, the coating amount of UV-curable adhesive on the upper surface of the perovskite top cell and the upper surface of the crystalline silicon bottom cell is 25~35 mg / cm². 2 .

[0023] According to the method for preparing a perovskite-silicon tandem solar cell protected by the present invention, preferably, the ultraviolet irradiation curing conditions are: curing energy 150~300mJ / cm². 2 Curing time: 1-5 seconds.

[0024] Thirdly, the present invention also specifically protects the application of a perovskite crystalline silicon tandem solar cell in the field of photovoltaic power generation.

[0025] Beneficial effects:

[0026] This invention provides a perovskite-silicon tandem solar cell, wherein the intermediate interconnect layer is prepared by embedding an Ag metal mesh inside a TCO substrate, and then depositing another TCO layer on the TCO substrate with the embedded Ag metal mesh. Embedding the Ag metal mesh in the TCO composite layer as the interconnect layer of the tandem solar cell can enhance the adhesion of the interconnect layer, ensure the stability and reliability of the cell structure, and the overall structure of the intermediate interconnect layer can also help reduce electrical losses and enhance optical performance. Attached Figure Description

[0027] To make the content of this invention easier to understand, the invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0028] Figure 1 This is one of the schematic diagrams illustrating the fabrication steps of the intermediate interconnect layer.

[0029] Figure 2 This is the second schematic diagram of the fabrication steps for the intermediate interconnect layer.

[0030] Figure 3 This is a schematic diagram of a perovskite-silicon tandem solar cell. Detailed Implementation

[0031] The following examples are for illustrative purposes only and are not intended to limit the scope of the invention. Where specific techniques or conditions are not specified in the examples, they should be performed according to the techniques or conditions described in the literature in this field, or according to the product instructions. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased from legitimate channels.

[0032] In a specific embodiment, the present invention provides a perovskite-silicon tandem solar cell, comprising a perovskite top cell, an intermediate interconnect layer, and a crystalline silicon bottom cell, wherein the intermediate interconnect layer is prepared by the following method:

[0033] An Ag metal mesh is embedded on the surface of a TCO substrate, and then another TCO layer is deposited to form an integrated structure in which the TCO substrate encapsulates the Ag metal mesh, thus preparing an intermediate interconnect layer.

[0034] It should be noted that:

[0035] Interconnect layer: The interconnect layer is a key functional layer located between the perovskite top cell and the crystalline silicon bottom cell. It is not a simple physical interface, but a complex multilayer structure whose core function is to achieve efficient and reliable electrical and optical connections between the two sub-cells. Currently, interconnect layers are mainly transparent conductive oxides, such as ITO (indium tin oxide), IZO (indium zinc oxide), and AZO (zinc oxide).

[0036] The intermediate interconnect layer (Ag-embedded TCO composite layer) of the present invention is an interconnect layer with a structure of "TCO layer embedded with Ag + TCO composite layer". It uses crystalline TCO (e.g., AZO, ITO) as the matrix and embeds Ag metal mesh into the matrix through annealing diffusion to form an integrated structure in which the TCO matrix wraps the Ag metal mesh, rather than a physical clamping.

[0037] The perovskite / crystalline silicon tandem solar cell provided by this invention embeds an Ag metal mesh into a TCO substrate in its intermediate interconnect layer, followed by the deposition of a surface TCO layer, forming a composite layer structure of an Ag-embedded TCO layer + a TCO layer. This allows for the bonding of the perovskite top cell, intermediate interconnect layer, and crystalline silicon bottom cell body through a single lamination process. By optimizing material layout and spatial design, efficient separation and transport of electrons and holes are achieved, improving the conversion efficiency and long-term stability of the tandem solar cell, while also enhancing the stability of the interconnects, thus meeting the demands of large-scale mass production.

[0038] In some specific embodiments, the TCO substrate mentioned in this invention is preferably obtained by the following method:

[0039] A transparent glass substrate (3-5 mm thick) is used. The surface oxide layer is removed by acid washing (e.g., HF acid), and an ITO layer is deposited by magnetron sputtering to obtain a TCO substrate.

[0040] In some specific embodiments, the thickness of the Ag metal mesh mentioned in this invention is preferably 10~30nm, and the linewidth is preferably 15~30nm. For example, the thickness of the Ag metal mesh can be a point value of 10nm, 15nm, 20nm, 25nm, 30nm, or any other arbitrary range, and the linewidth can be a point value of 15nm, 20nm, 25nm, 30nm, or any other arbitrary range.

[0041] In some specific embodiments, in order to better achieve synergistic improvement, the present invention further preferably controls the surface area ratio of the Ag metal mesh to be 2 to 6% of the surface area of ​​the TCO substrate, for example, it can be a point value such as 2%, 3%, 4%, 5%, 6% or any range of values.

[0042] In the perovskite-silicon tandem solar cell mentioned in this invention, by optimizing the parameters of the Ag metal mesh as described above, it is possible to reduce light shading and improve light transmittance while ensuring a certain level of conductivity. Compared with the traditional whole-layer transparent conductive layer, the Ag metal mesh has a smaller light-shading area, allowing more light to be transmitted to the crystalline silicon solar cell, thereby improving the light utilization rate of the tandem solar cell.

[0043] Furthermore, Ag possesses extremely high electrical conductivity, with a sheet resistance far lower than that of traditional TCO materials. Optimizing the Ag metal mesh parameters can more effectively reduce the overall resistance of the interconnect layer, improve current transport, and enhance the fill factor and overall efficiency of the battery.

[0044] In specific embodiments, the shape of the Ag metal mesh mentioned in this invention can be any shape. In order to further improve structural stability, in some exemplary embodiments, it can preferably be a star-shaped mesh.

[0045] In specific embodiments, the intermediate interconnect layer of the perovskite-silicon tandem solar cell of the present invention can conventionally adopt the thickness of a general intermediate interconnect layer, and is further preferably 10~300nm, for example, it can be a point value of 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm or any range of values.

[0046] In some specific embodiments, the present invention further provides a specific operation for embedding an Ag metal mesh on the surface of a TCO substrate:

[0047] A magnetron sputtering process is used to deposit an Ag metal mesh on the surface of a TCO substrate using a mask, followed by annealing at a temperature of 400-700°C for 5-10 minutes to obtain a TCO substrate with an embedded Ag metal mesh.

[0048] Annealing can promote the diffusion of Ag elements into the TCO matrix, thereby forming an Ag-intercalated structure. The selection of annealing conditions can enhance the Ag intercalation effect, but when increasing the annealing temperature, it is necessary to ensure that it does not exceed the melting point of the glass.

[0049] In a specific embodiment, the present invention also provides a method for preparing a perovskite-silicon tandem solar cell, comprising the following steps:

[0050] S1. An Ag metal mesh is embedded on the surface of a TCO substrate, and another TCO layer is deposited to form an integrated structure in which the TCO substrate encapsulates the Ag metal mesh, thus preparing an intermediate interconnect layer;

[0051] S2. Apply UV-curable adhesive to both the upper surface of the perovskite top cell and the upper surface of the crystalline silicon bottom cell. Place the intermediate interconnect layer between the perovskite top cell and the crystalline silicon bottom cell, and laminate while simultaneously curing under UV irradiation to obtain a perovskite-crystalline silicon tandem cell.

[0052] In some specific exemplary embodiments, in the method for fabricating a perovskite-silicon tandem solar cell provided by the present invention, it is preferred to control the embedding depth of the Ag metal mesh in the intermediate interconnect layer to be 15~35nm and the linewidth to be 15~30nm.

[0053] In some specific exemplary embodiments, in the method for preparing a perovskite-silicon tandem solar cell provided by the present invention, it is preferred to control the surface area ratio of the metal mesh of the intermediate interconnect layer to be 2 to 6% of the surface area of ​​the TCO substrate.

[0054] In some specific exemplary embodiments, in the method for fabricating a perovskite-silicon tandem solar cell provided by the present invention, in order to further improve the overall structural stability, it is preferable to control the shape of the metal mesh of the intermediate interconnect layer to be a star-shaped grid.

[0055] In some specific exemplary embodiments, in the method for preparing a perovskite-silicon tandem solar cell provided by the present invention, the thickness of the intermediate interconnect layer is 10~300nm.

[0056] In some specific exemplary embodiments, the specific operation of embedding an Ag metal mesh inside the TCO substrate in the fabrication method of the perovskite-silicon tandem solar cell provided by the present invention is as follows:

[0057] A magnetron sputtering process is used to deposit an Ag metal mesh on the surface of a TCO substrate using a mask, followed by annealing at a temperature of 400-700°C for 5-10 minutes to obtain a TCO substrate with an embedded Ag metal mesh.

[0058] In some specific exemplary embodiments, in order to achieve a good lamination and curing effect and improve structural stability, the coating amount of UV-curable adhesive on the upper surface of the perovskite top cell and the upper surface of the crystalline silicon bottom cell mentioned in this invention is 25~35 mg / cm². 2 For example, it can be 25mg / cm³ 2 28mg / cm 2 30mg / cm 2 32mg / cm 2 35mg / cm 2 Equal point values ​​or any range of values.

[0059] In some specific exemplary embodiments, in order to achieve good lamination curing effect and improve structural stability, the ultraviolet irradiation curing conditions mentioned in this invention are: curing energy 150~300mJ / cm². 2 Curing time: 1-5 seconds.

[0060] For example, the curing energy can be 150 mJ / cm. 2 180mJ / cm 2 200mJ / cm 2 230mJ / cm 2 250mJ / cm 2 280mJ / cm 2 300mJ / cm 2 The curing time can be a point value such as 1s, 2s, 3s, 4s, 5s, or any range of values.

[0061] The perovskite-silicon tandem solar cell provided by this invention has a simple fabrication process and solves the problem of insufficient interface stability of the intermediate interconnect layer in current perovskite-silicon tandem solar cells, effectively enhancing the overall mechanical structural stability of the perovskite-silicon tandem solar cell. This invention also addresses the contradiction between optical and electrical performance through the intermediate interconnect layer, reducing light obstruction and increasing light transmittance while maintaining a certain level of conductivity. Compared to traditional solid transparent conductive layers, the Ag metal mesh has a smaller light-blocking area, allowing more light to penetrate to the crystalline silicon cell, thereby improving the light utilization rate of the tandem solar cell. Furthermore, the intermediate interconnect layer structure of this invention effectively reduces the overall resistance of the interconnect layer, improves current transmission, and enhances the fill factor and overall efficiency of the cell.

[0062] Based on the above advantages, the perovskite-silicon tandem solar cell provided by this invention can be widely used in the field of photovoltaic power generation.

[0063] Example 1

[0064] A perovskite-silicon tandem solar cell includes a perovskite top cell, an intermediate interconnect layer, and a crystalline silicon bottom cell, wherein the intermediate interconnect layer is prepared by the following method:

[0065] An Ag metal mesh is embedded on the surface of a TCO substrate, and then another TCO layer is deposited on the TCO substrate with the embedded Ag metal mesh to form an integrated structure in which the TCO substrate encapsulates the Ag metal mesh, thus preparing an intermediate interconnect layer.

[0066] like Figure 1 As shown, the Ag metal mesh has a star-shaped pattern. The thickness of the Ag metal mesh in the intermediate interconnect layer is 15nm, the linewidth is 20nm, the surface area of ​​the Ag metal mesh accounts for 3% of the surface area of ​​the TCO substrate, and the thickness of the intermediate interconnect layer is 30nm.

[0067] Example 2

[0068] A perovskite-silicon tandem solar cell includes a perovskite top cell, an intermediate interconnect layer, and a crystalline silicon bottom cell. The difference from Example 1 is that the thickness of the Ag metal mesh in the intermediate interconnect layer is 20 nm, the linewidth is 25 nm, and the thickness of the intermediate interconnect layer is 50 nm.

[0069] Example 3

[0070] A perovskite-silicon tandem solar cell includes a perovskite top cell, an intermediate interconnect layer, and a crystalline silicon bottom cell. The difference from Example 1 is that the surface area of ​​the Ag metal mesh accounts for 5% of the surface area of ​​the TCO substrate.

[0071] Example 4

[0072] A method for fabricating a perovskite-silicon tandem solar cell according to Example 1 includes the following steps:

[0073] 1) A transparent glass substrate (thickness 3~5mm, light transmittance >95%) is used. The surface oxide layer is removed by HF pickling, and an ITO layer is deposited by magnetron sputtering to obtain a TCO substrate.

[0074] A magnetron sputtering process was used to deposit a star-shaped Ag metal mesh on the surface of a TCO substrate using a mask. Annealing (600℃, 8 min) allowed the Ag to diffuse into the TCO layer, resulting in a TCO substrate with an embedded Ag metal mesh. Figure 1 ;

[0075] A further TCO layer is deposited on the surface of the TCO substrate with embedded Ag metal mesh, forming an integrated structure in which the TCO matrix encapsulates the Ag metal mesh, thus preparing the intermediate interconnect layer, such as... Figure 2 ;

[0076] 2) A UV-curable adhesive is coated on the upper surface of both the perovskite top cell and the crystalline silicon bottom cell. An intermediate interconnect layer is placed between the perovskite top cell and the crystalline silicon bottom cell. The layers are laminated and cured under UV irradiation simultaneously to obtain a perovskite-crystalline silicon tandem solar cell, as shown below. Figure 3 The amount of UV-curable adhesive applied to the upper surface of the perovskite top cell and the upper surface of the crystalline silicon bottom cell was 27 mg / cm². 2 The UV curing conditions were: curing energy 20 mJ / cm². 2 Curing time: 3 seconds.

[0077] Comparative Example 1

[0078] A perovskite-silicon tandem solar cell includes a perovskite top cell, an intermediate interconnect layer, and a crystalline silicon bottom cell. The difference from Example 1 is that the intermediate interconnect layer is a TCO layer + an independently stacked Ag metal mesh + a TCO layer.

[0079] Perovskite cells and organic cells are stacked together using a mechanical stacking method to form a tandem solar cell with two ends.

[0080] Result detection

[0081] The mechanical stability, optical performance, and electrical performance of the perovskite-silicon tandem solar cells in the above embodiments and comparative examples were tested using the following methods:

[0082] Mechanical stability - thermal cycling test: TC200 test conditions: low temperature -40℃, high temperature 85℃, holding time 30min, number of cycles 200.

[0083] Optical Testing - Photoluminescence (PL) Testing: When a light source shines on a semiconductor material, it excites electrons to jump from the valence band to the conduction band, forming electron-hole pairs. When these charge carriers recombine, they release photons, producing photoluminescence.

[0084] Current and voltage measurements: By analyzing changes in photocurrent and voltage, the photoelectric conversion efficiency and dynamic response characteristics of the solar cell can be evaluated.

[0085] Data acquisition and processing: High-precision sensors are used to record light intensity, current and voltage data, and algorithms are used to calculate key performance indicators.

[0086] Electrical Testing - Fill Factor: The fill factor FF parameter can be obtained by performing IV testing. Simulating sunlight (3A-level light source) shining on the battery surface, the battery cell generates exposure voltage. The electronic sliding load changes continuously over a short period of time. The software measures the current and voltage of the battery cell over a continuous period of time, fits the current-voltage characteristic curve, and obtains the fill factor.

[0087] The specific test results are shown in Table 1.

[0088] Table 1

[0089]

[0090] As can be seen from the test results in Table 1, the interface interconnect layer of the present invention has good interface stability, achieving no cracking or delamination at the interface after 700 hours, while existing interface interconnect layers show obvious interface peeling after 500 hours. Simultaneously, the interface interconnect layer of the present invention also synergistically improves optical and electrical performance, achieving a fill factor of over 80% and improving optical performance by 15-25%.

[0091] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A perovskite-silicon tandem solar cell, comprising a perovskite top cell, an intermediate interconnect layer, and a crystalline silicon bottom cell, characterized in that, The intermediate interconnect layer is prepared by the following method: An Ag metal mesh is embedded on the surface of a TCO substrate, and then another TCO layer is deposited to form an integrated structure in which the TCO substrate encapsulates the Ag metal mesh, thus preparing an intermediate interconnect layer. The Ag metal mesh has a thickness of 10~30nm and a linewidth of 15~30nm; The surface area of ​​the Ag metal mesh accounts for 2-6% of the surface area of ​​the TCO substrate; The specific operation of embedding Ag metal mesh on the surface of TCO substrate is as follows: A magnetron sputtering process is used to deposit an Ag metal mesh on the surface of a TCO substrate using a mask, followed by annealing at a temperature of 400-700°C for 5-10 minutes to allow Ag to diffuse into the TCO layer, resulting in a TCO substrate with an Ag metal mesh embedded in its surface.

2. The perovskite-silicon tandem solar cell according to claim 1, characterized in that, The shape of the Ag metal mesh is a cross-shaped grid.

3. The perovskite-silicon tandem solar cell according to claim 1 or 2, characterized in that, The thickness of the intermediate interconnect layer is 10~300nm.

4. A method for preparing a perovskite-silicon tandem solar cell, characterized in that, Includes the following steps: S1. Using magnetron sputtering, an Ag metal mesh is deposited on the surface of a TCO substrate through a mask, followed by annealing at a temperature of 400~700℃ for 5~10 minutes to allow Ag to diffuse into the interior of the TCO layer, resulting in a TCO substrate with an Ag metal mesh embedded in its surface. Another TCO layer is then deposited to form an integrated structure in which the TCO substrate encapsulates the Ag metal mesh, thus preparing the intermediate interconnect layer. S2. Apply UV-curable adhesive to both the upper surface of the perovskite top cell and the upper surface of the crystalline silicon bottom cell. Place the intermediate interconnect layer between the perovskite top cell and the crystalline silicon bottom cell, and laminate while simultaneously curing under UV irradiation to obtain a perovskite-crystalline silicon tandem cell.

5. The method for preparing a perovskite-silicon tandem solar cell according to claim 4, characterized in that, The intermediate interconnect layer has at least one of the following characteristics: a. The embedding depth of the Ag metal mesh is 15~35nm, and the linewidth is 15~30nm; b. The surface area of ​​the Ag metal mesh accounts for 2-6% of the surface area of ​​the TCO substrate; c. The shape of the Ag metal mesh is a star-shaped grid; d. The thickness of the intermediate interconnect layer is 10~300nm.

6. The method for preparing a perovskite-silicon tandem solar cell according to claim 4, characterized in that, The amount of UV-curable adhesive applied to the upper surface of the perovskite top cell and the upper surface of the crystalline silicon bottom cell is 25~35 mg / cm². 2 ; And / or, the ultraviolet irradiation curing conditions are: curing energy 150~300mJ / cm². 2 Curing time is 1-5 seconds.

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