A sensor for continuously testing the static pressure of a direct-current output schottky diode and a preparation method and application thereof

Abstract

The application provides a direct-current output Schottky diode sensor for continuously testing static pressure and a preparation method and application thereof. The inside of the sensor is sequentially provided with a first electrode, n-type germanium and a second electrode from top to bottom, and the outside of the sensor is packaged with a resin film. The work function of the first electrode is 4.0-4.4 eV, and the first electrode forms an ohmic contact with the n-type germanium. The work function of the second electrode is greater than 4.4 eV, and the second electrode forms a Schottky contact with the n-type germanium. The thickness of the n-type germanium is 0.7-3.5 mm, the thickness of the first electrode is 0.1-1 mm, and the thickness of the second electrode is 0.1-1 mm. The application breaks through the limitation that a traditional piezoelectric generator needs dynamic stimulation and generates an instantaneous alternating current signal, and realizes continuous output of direct current under static pressure. The application can be applied to multiple fields as a self-powered sensor and is used for long-term monitoring of static mechanical stimulation.

Description

Technical Field

[0001] This invention belongs to the field of electrical engineering, and in particular relates to a DC output Schottky diode sensor for continuous static pressure testing, its preparation method, and its application. Background Technology

[0002] The conversion of mechanical energy into electrical energy, also known as "electromechanical conversion" or "energy harvesting," has been widely applied in wearable electronics, power generation, artificial intelligence, and the Internet of Things. These can be achieved through different principles, including electromagnetism, piezoelectricity, and triboelectricity. Piezoelectricity and triboelectricity are particularly promising due to their ability to create miniaturized, lightweight, and flexible devices. However, these technologies can only generate transient signals through dynamic mechanical stimulation. Once the strain remains static, the electrical output stops immediately. For piezoelectric devices, continuous power generation under constant voltage typically decays within 0.1–10 s, while the output of triboelectric nanogenerators disappears instantaneously within 0.01–0.05 s. Furthermore, all of the aforementioned electromechanical technologies can only produce AC output, which is incompatible with existing DC electronic devices.

[0003] In 2016, Lin et al. developed a device capable of directly generating direct current (DC) under compression. This device utilizes compressive force to modulate the barrier height of the Schottky junction between a metal and a conductive polymer, thereby achieving stable DC output during dynamic compression. Its energy conversion mechanism differs from traditional triboelectric and piezoelectric nanogenerators, providing a new approach for developing DC power generation sensors. Subsequently, the team systematically explored strategies to improve sensor performance. Proton acid / graphene / metal oxide doping techniques effectively enhanced the sensor's output power. Meanwhile, sliding triboelectric DC power generation devices based on metal / semiconductor Schottky junctions have also been reported, further enriching the pathways for realizing DC mechanical energy generation.

[0004] Monitoring static mechanical stimuli (such as resting weight, grip strength, or posture) is crucial for a wide range of applications, from long-term health monitoring to tactile sensing in intelligent robots. Currently, this need is primarily met by piezoresistive or capacitive sensors. While these devices are effective, they operate as passive components, requiring a continuous external bias voltage to function, which inevitably leads to sustained power consumption and increased system complexity. Therefore, developing self-powered sensing technologies capable of continuously outputting DC power under sustained electrostatic pressure remains a significant challenge.

[0005] Although the above research has promoted the development of Schottky DC power generation technology, there are still some limitations in the existing work: (1) The Schottky DC power generation sensors reported so far all work under dynamic compression or friction conditions, and there is a lack of research on the continuous generation of DC power under static compression conditions; (2) The electrical behavior and physical mechanism of compression-driven Schottky sensors under static compression conditions are still a research blank; (3) The compression mode Schottky DC power generation sensors mainly use p-type conductive polymers (polyaniline, polypyrrole, polythiophene) as functional semiconductors, and there is a lack of research on inorganic n-type semiconductor materials; (4) From the perspective of application needs, the energy harvesting and self-powered sensing functions for static forces still need to be developed. Summary of the Invention

[0006] In view of this, the present invention aims to overcome the defects in the prior art and proposes a DC output Schottky diode sensor for continuous static pressure testing, its preparation method and application.

[0007] To achieve the above objectives, the technical solution of the present invention is implemented as follows:

[0008] This invention provides a DC output Schottky diode sensor for continuous static pressure testing. The sensor has a first electrode, an n-type germanium electrode, and a second electrode arranged sequentially from top to bottom on its inner side, and a resin film encapsulating the outer side of the sensor.

[0009] The work function of the first electrode is 4.0-4.4 eV, and the first electrode forms an ohmic contact with n-type germanium;

[0010] The work function of the second electrode is greater than 4.4 eV, and the second electrode forms a Schottky contact with n-type germanium;

[0011] The thickness of the n-type germanium is 0.7-3.5 mm, the thickness of the first electrode is 0.1-1 mm, and the thickness of the second electrode is 0.1-1 mm.

[0012] The DC output Schottky diode sensor for continuous static pressure testing described in this invention employs a "carbon-plated copper foil electrode / n-type germanium / tin foil" (C@Cu / n-Ge / Sn) sandwich structure, such as... Figure 1 As shown in (a), the sensor is thermo-encapsulated using a polyethylene terephthalate (PET) resin film; under conditions of applying and maintaining static compression, the sensor is able to continuously and stably output a DC signal.

[0013] n-type germanium is a metal ingot prepared by the Czochralski method, with a density of 5.323 g / cm³. 2 The melting point is 937.4℃, and the crystal plane is of type (111). Germanium accounts for 99.53% and antimony (Sb) accounts for 0.47%.

[0014] Furthermore, the effective area of ​​the DC output Schottky diode sensor is 0.3-2.25 cm². 2 The resistivity of the n-type germanium is 1.63 × 10⁻⁶. -3 -2.05×10 -3 Ω•cm, electron mobility 2.15×10 3 -4.26×10 3 cm 2 / V•s, carrier concentration is 8.74×10 17 -1.42×10 18 cm -3 The charge carriers are much higher than the intrinsic excitation level, providing an abundant reserve of external free electrons. The Hall coefficient is -4.41, indicating that the semiconductor type is n-type.

[0015] Furthermore, the first electrode is a tin electrode or an indium electrode; the second electrode is at least one of a carbon electrode, a carbon-plated electrode, a gold electrode, or a platinum electrode; and the resin film is a PET film.

[0016] This invention also provides a method for fabricating a DC output Schottky diode sensor for continuous static pressure testing, applicable to the aforementioned DC output Schottky diode sensor, comprising the following steps:

[0017] Step 1 involves etching the surface of n-type germanium to remove impurities and oxide layers, resulting in processed n-type germanium.

[0018] Step 2 involves assembling the processed n-type germanium with the first electrode, the second electrode, and the resin film, followed by hot-pressing encapsulation to obtain the DC output Schottky diode sensor for continuous static pressure testing.

[0019] Furthermore, the etching process in step 1 specifically involves: placing the n-type germanium in a processing solution for etching, followed by washing and drying to obtain the processed n-type germanium.

[0020] Furthermore, the treatment solution is a hydrochloric acid solution, and the mass fraction of hydrochloric acid in the hydrochloric acid solution is 36-50 wt%; the etching treatment step specifically involves etching n-type germanium under ultrasonic conditions for 1-3 minutes, with the ultrasonic frequency being 80-100 Hz; the washing step uses anhydrous ethanol for washing; and the drying step uses nitrogen gas for drying.

[0021] Furthermore, the temperature of the thermopressing encapsulation step in step 2 is 90-150℃.

[0022] This invention also provides an application of a DC output Schottky diode sensor for continuous static pressure testing, wherein the DC output Schottky diode sensor is used in the fabrication of equipment subjected to static pressure; the DC output Schottky diode sensor provides DC output under static compression conditions.

[0023] Furthermore, the static compressive strain under the static compression conditions is 2.7-5.4%; the initial compression rate under the static compression conditions is 5-12 mm / min; and the short-circuit current of the DC output Schottky diode sensor under the static compression conditions is 36.99-275.59 μA, with a peak power density of 169.39 μW / m³. 2 .

[0024] This invention also provides an application of a DC output Schottky diode sensor for continuous static pressure testing, which is used in the fields of medical devices, artificial intelligence, building facilities, or traffic monitoring; and in medical monitoring devices, underwater monitoring devices, vehicle monitoring devices, or wearable devices.

[0025] The aforementioned DC-output Schottky diode sensor for continuous static pressure testing can directly generate DC power and is applicable to various static force sensing fields. For example, in biomedical environments, it can be used for blood pressure monitoring and as an implantable medical device for posture correction; in robotics, it can serve as electronic skin for robots, providing continuous tactile feedback when grasping objects; in building safety, it can continuously monitor static pressures such as water pressure and building pressure in real time; and in public transportation, it can be used in multi-channel intelligent transportation systems to monitor vehicle parking status (vehicle weight, parking time, parking space). Therefore, the DC-output Schottky diode sensor of this invention possesses self-powered static pressure sensing capabilities and has broad application prospects in biomedicine, machine interaction, infrastructure safety, and public transportation.

[0026] Compared with the prior art, the present invention has the following advantages:

[0027] This invention overcomes the limitations of traditional piezoelectric generators, which require dynamic stimulation and generate instantaneous AC signals. It reveals the physical mechanism of generating DC output by lowering the Schottky barrier under static compression, achieving continuous and stable DC output under static compression. This sensor requires no external power supply and can be widely used as a self-powered device in fields such as medical monitoring, artificial intelligence (e.g., electronic skin), building safety, and intelligent transportation (e.g., vehicle weight and parking time monitoring) for long-term monitoring of static mechanical stimuli.

[0028] The DC output Schottky diode sensor for continuous static pressure testing described in this invention successfully applies inorganic n-type semiconductors to the field of Schottky DC piezoelectricity, breaking through the material limitations of p-type organic polymers and filling the application gap of inorganic n-type semiconductors in this field. Inorganic semiconductors typically have higher carrier mobility and better chemical / physical stability, which provides a new material basis and development direction for developing DC power generation sensors with higher output, longer life, and more demanding operating environments.

[0029] The DC output Schottky diode sensor for continuous static pressure testing described in this invention can be directly applied to scenarios such as biomedicine, machine interaction, building safety, and public transportation. It converts previously unusable constant pressure into electrical energy, creating a brand-new static self-powered sensing mode. The sensor itself is both the power source and the sensor (self-powered sensor), and can monitor static force in real time and continuously without external power supply. In the future, it can be applied to various scenarios such as intelligent transportation, health monitoring, and robotics. Attached Figure Description

[0030] Figure 1 The diagram below shows a DC output Schottky diode sensor (C@Cu / n-Ge / Sn) for continuous static pressure testing according to an embodiment of the present invention: (a) is a structural diagram, and (b) is a physical diagram.

[0031] Figure 2 The following describes the variation trends of short-circuit current and open-circuit voltage of C@Cu / n-Ge / Sn under different compressive strains as described in the embodiments of the present invention.

[0032] Figure 3 The following describes the variation trends of short-circuit current and open-circuit voltage of C@Cu / n-Ge / Sn under different initial compression rates in embodiments of the present invention.

[0033] Figure 4 The effect of n-type germanium thickness on the short-circuit current and open-circuit voltage of C@Cu / n-Ge / Sn as described in the embodiments of the present invention;

[0034] Figure 5 This illustrates the effect of the effective working area of ​​C@Cu / n-Ge / Sn on short-circuit current and open-circuit voltage as described in this embodiment of the invention.

[0035] Figure 6 The DC output performance of C@Cu / n-Ge / Sn under 5.4% static pressure according to the embodiments of the present invention is as follows: (a) is the strain-time curve, (b) is the stress-time curve, (c) is the short-circuit current-time curve, and (d) is the open-circuit voltage-time curve.

[0036] Figure 7The power density of C@Cu / n-Ge / Sn measured under different load resistances according to the embodiments of the present invention is as follows: (a) is the short-circuit and open-circuit voltages under different load resistances, and (b) is the power density.

[0037] Figure 8 The IV curves of C / n-Ge, Sn / n-Ge, and C / n-Ge / Sn as described in the embodiments of the present invention;

[0038] Figure 9 The reverse saturation current density and Schottky barrier variation of C@Cu / n-Ge / Sn as described in the embodiments of the present invention are shown in the figures: where (a) represents different compressive strains and (b) represents strain holding.

[0039] Figure 10 The effect of static compression on the surface potential of a DC output Schottky diode sensor as described in this embodiment of the invention is as follows: (a) is the average surface potential energy change in the uncompressed (0%) state and the 5.4% static compressive strain state; (b) is the potential difference change of C / n-Ge and C / Sn under continuous static compressive strain conditions.

[0040] Figure 11 This is a schematic diagram of the electron transfer path for the DC output Schottky diode sensor to continuously generate a DC signal according to an embodiment of the present invention;

[0041] Figure 12 This is a schematic diagram of the "mechanical energy input-storage-slow release" mechanism of the DC output Schottky diode sensor described in an embodiment of the present invention, which continuously generates DC signals under static pressure conditions;

[0042] Figure 13 The application of C@Cu / n-Ge / Sn in different scenarios, where (a) is posture monitoring (leaning and sitting), and (b) is motion monitoring (standing and walking).

[0043] Figure 14 The C@Cu / n-Ge / Sn sensor array described in this embodiment monitors vehicle parking space, vehicle weight, and parking time: (a) is the test scenario where the vehicle is parked in channel P2, and (b) is the DC output performance when the vehicle is parked in channels P2 and P4. Detailed Implementation

[0044] Unless otherwise defined, the technical terms used in the following embodiments have the same meanings as commonly understood by those skilled in the art. Unless otherwise specified, the experimental reagents used in the following embodiments are conventional biochemical reagents; and the experimental methods described are conventional methods.

[0045] The present invention will be described in detail below with reference to the embodiments.

[0046] Example 1

[0047] A method for fabricating a DC output Schottky diode sensor for continuous static voltage testing includes the following steps:

[0048] (1) Place n-type germanium in a beaker and etch it for 3 min under 100 Hz ultrasonic conditions with 36 wt% hydrochloric acid to remove the metal oxide on the semiconductor surface. Wash with deionized water to remove the residue, then treat with anhydrous ethanol under 100 Hz ultrasonic conditions for 10 min to remove organic impurities. Finally, wash with deionized water and dry in high-purity nitrogen.

[0049] (2) A 0.1 mm thick tin foil electrode (work function of 4.34 eV), a 0.7 mm thick n-type germanium electrode (work function of 4.19 eV), and a 0.1 mm thick carbon-plated copper foil (work function of 4.88 eV) are stacked and assembled from top to bottom. The electrodes are then thermo-encapsulated with PET film at 90°C to obtain a DC output Schottky diode sensor. The structural diagram is shown below. Figure 1 As shown in (a), the actual object is shown in the figure. Figure 1 As shown in (b), the effective working size is 1.5 mm × 1.5 mm × 0.7 mm; among which, the electron mobility of n-type germanium (germanium atomic ratio of 92.2%, antimony atomic ratio of 7.8%, and Sb doping effectively increases the free electron density, resulting in an electron concentration significantly higher than the intrinsic hole concentration) is 2.15 × 10⁻⁶. 3 cm 2 / V•s, carrier concentration is 1.42×10 18 cm -3 The resistivity is 2.05 × 10⁻⁶. -3 Ω•cm.

[0050] Experiment Example 1: Performance Testing of a C@Cu / n-Ge / Sn DC Output Schottky Diode Sensor

[0051] The output performance of the sensor was tested under different static compressive strains, different initial compression rates, different thicknesses, and different areas.

[0052] When the initial compression rate was 12 mm / min, as the compressive strain increased from 2.7% to 5.4%, the short-circuit current increased linearly from 36.99 μA to 275.59 μA, and the open-circuit voltage increased linearly from 0.01 mV to 0.08 mV. Figure 2 As shown.

[0053] When the compressive strain is maintained at 5.4%, as the initial compression rate increases from 5 mm / min to 12 mm / min, the short-circuit current increases from 189.36 μA to 275.80 μA, and the open-circuit voltage decreases slightly. Figure 3 As shown.

[0054] The thickness of the n-type germanium and the working area of ​​the sensor also affect the sensor's electrical output performance. When the compressive strain is 5.4% and the initial compression rate is 12 mm / min, increasing the thickness of the n-type germanium slightly reduces the short-circuit current, but has little effect on the open-circuit voltage. Figure 4 As shown.

[0055] In contrast, short-circuit current and open-circuit voltage increase proportionally with the increase of sensor area, such as... Figure 5 As shown.

[0056] Therefore, when the thickness of n-type germanium is 0.7 mm, the sensor area is 2.25 cm². 2 When compressed to 5.4% strain at an initial velocity of 12 mm / min and held, the sensor's short-circuit current is 275.59 μA and its open-circuit voltage is 0.08 mV. Figure 6 As shown in (a)-6(d).

[0057] Furthermore, the power density of the Schottky sensor under static pressure was measured using an external load resistance (1-2000 Ω), and the maximum power density (Pd) of the sensor was finally calculated to be 169.39 μW•m. -2 The internal resistance is approximately 20Ω, such as Figure 7 (a)- Figure 7 As shown in (b).

[0058] Experiment Example 2: Investigation of the Generator Mechanism of Sensors

[0059] Based on the C@Cu / n-Ge / Sn DC output Schottky diode sensor obtained in Example 1, its electrical behavior under static compression conditions was systematically tested. Combined with IV curve fitting, surface potential distribution testing and other methods, the mechanism of the device generating steady-state DC output under static voltage drive was analyzed and demonstrated.

[0060] Figure 8 The figures show the current-voltage (IV) curves for C / n-Ge, Sn / n-Ge, and C / n-Ge / Sn. The results show that C / n-Ge exhibits a Schottky contact, while Sn / n-Ge exhibits an ohmic contact. The device as a whole also exhibits Schottky diode characteristics under uncompressed conditions.

[0061] By fitting the IV curve using a thermionic emission model, the reverse saturation current density (Js) of the device is obtained to be approximately 4.579 × 10⁻⁶. -5 A / cm 2 Schottky barrier height ( The reverse saturation current density is approximately 0.694 eV. After applying 5.4% static compression, the reverse saturation current density increases to 1.577 × 10⁻⁶ eV. -3 A / cm 2 The Schottky barrier height decreases to approximately 0.603 eV, as... Figure 9 As shown in (a), static compressive stress reduces the barrier height and narrows the depletion layer at the C / n-Ge interface. After maintaining the static compressive strain for 24 h, 48 h, 72 h, and 96 h, the device barrier height stabilizes after a slight increase, as shown in (a). Figure 9 As shown in (b).

[0062] To further verify the influence of the built-in electric field and potential distribution of the DC output Schottky diode sensor, a scanning Kelvin probe (SKP) or equivalent surface potential measurement method was used to scan the surface potential of the sensor in both uncompressed and compressed-hold states. Specifically, a linear scan was performed along the cross-sectional direction of the device, from the C@Cu electrode side across the n-Ge region to the Sn electrode side, obtaining a curve showing the surface potential changing with the probe position. Without applied static pressure, a significant potential difference exists between the C@Cu and n-Ge regions, reflecting a certain degree of band bending at the C / n-Ge interface. Figure 10 As shown in (a), after applying static compression, the potential difference between C / n-Ge decreased from 464.28 mV to 257.45 mV, further demonstrating the characteristic of compression leading to a lower potential barrier. When the strain was maintained, the potential difference between C / n-Ge also exhibited a slight increase followed by stabilization, and a potential difference always existed between the C and Sn electrodes, as shown in (a). Figure 10 As shown in (b). This result is consistent with the conclusion obtained from IV fitting, indicating that static compression can change the band structure at the C / n-Ge interface, thereby lowering the interface barrier. This state can be maintained during compression, thus providing a driving force for continuous electron transport.

[0063] In the uncompressed state, C and n-Ge form a Schottky contact, and electrons transfer from n-Ge to C. When static pressure is applied, the Schottky barrier at the n-Ge / C interface decreases, and electrons in C flow back to n-Ge. Due to the ohmic contact between n-Ge and Sn, electrons in n-Ge can easily transfer to the Sn electrode under compression. When the two ends of the sensor are connected by an external circuit to form a closed loop, the potential difference between the two electrodes will drive electrons from the Sn electrode to the C@Cu electrode through the external circuit. When compression is maintained, the Schottky barrier at the n-Ge / C interface remains low, and electrons flowing to the C@Cu electrode will again overcome the lowered barrier to reach n-Ge. This cycle repeats, forming a continuous electron cycle between "n-Ge → Sn electrode → external circuit → C@Cu electrode → n-Ge". Figure 11 As shown.

[0064] To quantify this conversion capability, we calculated the conversion efficiency from mechanical energy to electrical energy. This was achieved by analyzing the total input mechanical energy (...) using a force-displacement curve. W in )integral:

[0065]

[0066] Collected electrical energy ( W out () is obtained by integrating the electrical output of the device during continuous power generation:

[0067]

[0068] Therefore, energy conversion efficiency ( η )for:

[0069]

[0070] The calculated energy conversion efficiency was only 23.9%, which means that a considerable amount of mechanical energy was still stored in the system after 96 hours.

[0071] Based on the above test results, the mechanism by which the C@Cu / n-Ge / Sn DC output Schottky diode sensor generates steady-state DC output under static compression conditions can be summarized as follows (e.g.) Figure 12As shown in the diagram, when continuous pressure is applied to a Schottky junction, the external pressure continuously performs work, forming a dynamic energy cycle of "mechanical energy input-storage-dissipation". On one hand, the pressure work directly induces a decrease in the Schottky junction interface barrier through electromechanical coupling, driving the directional migration of interface charges, thereby generating direct current in real time. On the other hand, continuous compression leads to reversible deformation of the material. Therefore, some of the mechanical work is stored in the material in the form of elastic potential energy. At the same time, the stored elastic potential energy slowly relaxes and dissipates, establishing a dynamic balance between continuous energy storage and synchronous dissipation, providing an energy basis for continuous power generation.

[0072] In summary, experiments have demonstrated that the C@Cu / n-Ge / Sn sensor, relying on a specific Schottky / ohmic asymmetric structure, can achieve continuous and stable DC output under static compression conditions. Its working mechanism is fundamentally different from that of traditional piezoelectric and triboelectric nanogenerators, which only generate instantaneous pulse signals under static conditions (traditional piezoelectric sensors only generate electrical signals when the material is deformed, and triboelectric sensors only generate electrical signals during contact, separation, or sliding).

[0073] Experiment Example 3: Application of C@Cu / n-Ge / Sn DC Output Schottky Diode Sensor

[0074] The self-powered sensing performance of a C@Cu / n-Ge / Sn DC output Schottky diode sensor was investigated in various practical scenarios. When this sensor was integrated into a seat, a short-circuit current of 99.60 μA was generated when a person leaned against it, and a short-circuit current of 163.09 μA was generated when sitting down. Figure 13 As shown in (a). When the device is integrated into the shoe, it can generate short-circuit currents of 228.57 μA and 210.34 μA when the human body is standing and walking normally, respectively. Figure 13 As shown in (b).

[0075] Furthermore, multiple C@Cu / n-Ge / Sn sensors can be combined with a multi-channel signal acquisition system and a microcontroller unit to form an intelligent traffic monitoring system for real-time monitoring of parking conditions. When a vehicle occupies different parking spaces, the corresponding array channels generate electrical signals in real time. These signals are processed and transmitted to a mobile terminal interface to visualize the parking status (occupied or vacant). The current signal varies significantly depending on the vehicle's weight, thus the sensor array can effectively respond to different mechanical loads to detect vehicle weight. Because the sensor can continuously generate a stable electrical output under constant compression, it can also detect parking duration. Specifically, when the vehicle is parked at position P2, the corresponding P2 channel current duration is 4 min 03 s; when the vehicle is parked at position P4, the corresponding P4 channel current duration is 32.4 s. The short-circuit currents differ depending on the vehicle weight, being 6.2 μA and 20.63 μA respectively. Figure 14 (a)- Figure 14 As shown in (b), Figure 14 (a) is the actual test result for channel P2. Figure 14 (b) is a data display of the P2 and P4 channel tests.

[0076] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A DC output Schottky diode sensor for continuous static pressure testing, characterized in that: The aforementioned DC output Schottky diode sensor provides DC output under static compression conditions; The inner side of the DC output Schottky diode sensor for continuous static pressure testing is provided with a first electrode, an n-type germanium electrode and a second electrode in sequence from top to bottom, and the outer side of the sensor is encapsulated with a resin film. The work function of the first electrode is 4.0-4.4 eV, and the first electrode forms an ohmic contact with n-type germanium; The work function of the second electrode is greater than 4.4 eV, and the second electrode forms a Schottky contact with n-type germanium; The thickness of the n-type germanium is 0.7-3.5 mm, the thickness of the first electrode is 0.1-1 mm, and the thickness of the second electrode is 0.1-1 mm. The first electrode is a tin electrode; the second electrode is a carbon-plated copper foil electrode; the work function of n-type germanium is 4.19 eV; The effective area of ​​the DC output Schottky diode sensor is 0.3-2.25 cm². 2 The resistivity of the n-type germanium is 1.63 × 10⁻⁶. -3 -2.05×10 -3 Ω•cm, electron mobility 2.15×10 3 -4.26×10 3 cm 2 / V•s, carrier concentration is 8.74×10 17 -1.42×10 18 cm -3 .

2. The DC output Schottky diode sensor for continuous static pressure testing according to claim 1, characterized in that: The first electrode is an indium electrode; the second electrode is at least one of a carbon electrode, a gold electrode, or a platinum electrode; and the resin film is a PET film.

3. The DC output Schottky diode sensor for continuous static pressure testing according to claim 1, characterized in that: The static compressive strain under the static compression conditions is 2.7-5.4%; the initial compression rate under the static compression conditions is 5-12 mm / min; the short-circuit current of the DC output Schottky diode sensor under the static compression conditions is 36.99-275.59 μA, and the peak power density is 169.39 μW / m³. 2 .

4. The DC output Schottky diode sensor for continuous static pressure testing according to claim 1, characterized in that: The aforementioned DC output Schottky diode sensor is used in medical monitoring devices, underwater monitoring devices, vehicle monitoring devices, or wearable devices.

5. A method for fabricating a DC output Schottky diode sensor for continuous static pressure testing as described in any one of claims 1-4, characterized in that: The process includes the following steps: Step 1 involves etching the surface of n-type germanium to remove impurities and oxide layers, thereby obtaining the processed n-type germanium. Step 2 involves assembling the processed n-type germanium with the first electrode, the second electrode, and the resin film, followed by hot-pressing encapsulation to obtain the DC output Schottky diode sensor for continuous static pressure testing.

6. The method for fabricating a DC output Schottky diode sensor for continuous static pressure testing according to claim 5, characterized in that: The etching process in step 1 is as follows: the n-type germanium is placed in the processing solution for etching, and then washed and dried to obtain the processed n-type germanium.

7. The method for fabricating a DC output Schottky diode sensor for continuous static pressure testing according to claim 6, characterized in that: The treatment solution is a hydrochloric acid solution, and the mass fraction of hydrochloric acid in the hydrochloric acid solution is 36-50 wt%; the etching treatment step specifically involves etching n-type germanium under ultrasonic conditions for 1-3 minutes, with the ultrasonic frequency being 80-100 Hz; the washing step uses anhydrous ethanol for washing; and the drying step uses nitrogen gas for drying.

8. The method for fabricating a DC output Schottky diode sensor for continuous static pressure testing according to claim 5, characterized in that: The temperature of the thermopressing encapsulation step in step 2 is 90-150℃.

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