Percutaneous electrical nerve stimulation module control circuit and massage equipment

Abstract

The invention discloses a transcutaneous electrical nerve stimulation module control circuit and massage equipment, and the circuit comprises a micro-control unit which is connected with a drive unit and a waveform control unit, and is used for outputting a drive control signal to the drive unit, a first control signal and a second control signal are output to the waveform control unit; the driving unit is connected with the waveform control unit and is used for carrying out amplification and voltage following on the driving control signal so as to output a driving voltage to the waveform control unit; and the waveform control unit is used for outputting a forward voltage in the driving voltage under the control of the first control signal and outputting a backward voltage in the driving voltage under the control of the second control signal so as to realize bidirectional driving of the driving voltage to the transcutaneous electrical nerve stimulation module. The transcutaneous electrical nerve stimulation module control circuit is low in high-energy output loss, high in integration level and small in size.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of control circuit, in particular to a transcutaneous electrical nerve stimulation module control circuit and a massage device applying the same. BACKGROUND

[0002] TENS (Transcutaneous Electrical Nerve Stimulation) is a non-invasive treatment method for stimulating nerves by applying a weak current to the skin surface, which is often used to relieve acute and chronic pain and promote blood circulation. TENS components are often applied in massage devices.

[0003] The existing TENS (Transcutaneous Electrical Nerve Stimulation) component control circuit usually relies on a transformer to achieve voltage boosting, resulting in a relatively large circuit size and insufficient integration, which makes it difficult to meet the application requirements of device miniaturization and portability. At the same time, such control circuits usually only complete load driving through half a cycle waveform of the driving voltage, which has the problems of low energy utilization rate and high power consumption, seriously affecting the device's endurance and user experience. To solve the above problems, a TENS component control circuit with high integration and energy utilization is needed. SUMMARY

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a transcutaneous electrical nerve stimulation module control circuit and a massage device to solve the problems of low integration and low energy utilization of the current TENS control circuit.

[0005] The first aspect of the embodiment of the present application provides a transcutaneous electrical nerve stimulation module control circuit applied to a massage device, which includes a micro control unit and a driving unit and a waveform control unit connected with the micro control unit respectively, the driving unit is connected with the waveform control unit; The micro control unit is used to output a driving control signal to the driving unit and output a first control signal and a second control signal to the waveform control unit; The driving unit is used to amplify and voltage follow the driving control signal to output a driving voltage to the waveform control unit; The waveform control unit is used to output a forward voltage in the driving voltage under the control of the first control signal and output a reverse voltage in the driving voltage under the control of the second control signal, so as to realize the bidirectional driving of the driving voltage to the transcutaneous electrical nerve stimulation module.

[0006] In some embodiments of the present application, the waveform control unit comprises an H-bridge circuit, the H-bridge circuit comprising a first PNP-type transistor, a second PNP-type transistor, a first NPN-type transistor and a second NPN-type transistor; The first PNP-type transistor and the second PNP-type transistor serve as upper arms of the H-bridge circuit, the first NPN-type transistor and the second NPN-type transistor serve as lower arms of the H-bridge circuit, the emitter of the first PNP-type transistor and the emitter of the second PNP-type transistor serve as driving voltage input terminals, the emitter of the first NPN-type transistor and the emitter of the second NPN-type transistor are grounded; the first control signal controls the turn-on and turn-off of the first PNP-type transistor and the second NPN-type transistor, the second control signal controls the turn-on and turn-off of the second PNP-type transistor and the first NPN-type transistor, the collector of the first PNP-type transistor serves as a positive output terminal of the waveform control unit, and the collector of the second NPN-type transistor serves as a negative output terminal of the waveform control unit.

[0007] In some embodiments of the present application, the H-bridge circuit further comprises a third NPN-type transistor, a fourth NPN-type transistor, a first current-limiting resistor and a second current-limiting resistor, the collector of the third NPN-type transistor and the collector of the fourth NPN-type transistor both serve as driving voltage input terminals, the emitter of the third NPN-type transistor and the emitter of the fourth NPN-type transistor are grounded, the collector of the third NPN-type transistor is connected to the base of the first PNP-type transistor through the first current-limiting resistor, and the collector of the fourth NPN-type transistor is connected to the base of the second PNP-type transistor through the second current-limiting resistor; The first control signal controls the turn-on and turn-off of the first PNP-type transistor by controlling the turn-on and turn-off of the third NPN-type transistor, and the second control signal controls the turn-on and turn-off of the second PNP-type transistor by controlling the turn-on and turn-off of the fourth NPN-type transistor.

[0008] In some embodiments of the present application, when the first control signal controls the turn-off of the first PNP-type transistor and the second NPN-type transistor, the first control signal controls the second NPN-type transistor to turn off later than the first PNP-type transistor; When the second control signal controls the turn-off of the second PNP-type transistor and the first NPN-type transistor, the second control signal controls the first NPN-type transistor to turn off later than the second PNP-type transistor.

[0009] In some embodiments of this application, the transcutaneous electrical nerve stimulation module control circuit further includes a power supply module, which includes a boost circuit and a voltage regulator circuit. The boost circuit is configured to boost the original power supply voltage to output a first power supply voltage, and the voltage regulator circuit is configured to regulate the original power supply voltage to output a second power supply voltage, wherein the first power supply voltage is higher than the second power supply voltage.

[0010] In some embodiments of this application, the boost circuit includes a DC-DC power supply chip, a boost inductor, an input filter capacitor, an output filter capacitor, a first voltage divider resistor, and a second voltage divider resistor. The input terminal of the DC-DC power chip serves as the input terminal of the boost circuit, and the switching node of the DC-DC power chip serves as the output terminal of the boost circuit. The input filter capacitor is connected between the input terminal of the DC-DC power chip and the ground terminal, the output filter capacitor is connected between the switching node of the DC-DC power chip and the ground terminal, the boost inductor is connected between the input terminal of the DC-DC power chip and the switching node, the first voltage divider resistor is connected between the switching node of the DC-DC power chip and the feedback terminal, and the second voltage divider resistor is connected between the feedback terminal of the DC-DC power chip and the ground terminal.

[0011] In some embodiments of this application, the transcutaneous electrical nerve stimulation module control circuit further includes a continuity detection unit connected to the waveform control unit and the microcontroller unit respectively. The continuity detection unit includes a sixth NPN transistor, a first resistor, a second resistor, a third resistor, a second diode, a third diode, and a second capacitor. The first resistor and the second resistor are connected in series and then in parallel across the second capacitor. The second diode and the third diode are connected in series in the forward direction and then in parallel across the second capacitor. The second supply voltage supplies power to one end of the third resistor. The other end of the third resistor is connected to the collector of the sixth NPN transistor. The emitter of the sixth NPN transistor is grounded. The base of the sixth NPN transistor is connected between the first resistor and the second resistor. The anode of the second diode serves as the input terminal of the continuity detection unit. The emitter of the sixth NPN transistor serves as the output terminal of the continuity detection unit and is connected to the microcontroller unit. The cathode of the third diode is grounded.

[0012] In some embodiments of this application, the driving unit includes a filter amplifier circuit and a voltage follower circuit connected in series; the filter amplifier circuit is configured to filter the driving control signal and amplify it in phase to output an amplified voltage; the voltage follower circuit is configured to voltage follow the amplified voltage to output a driving voltage.

[0013] In some embodiments of this application, the microcontroller includes a Bluetooth module, which is used to establish communication with an external mobile terminal.

[0014] A second aspect of this application also provides a massage device, including a transcutaneous electrical nerve stimulation (TENS) module and the aforementioned TENS module control circuit, wherein the TENS module is connected to the TENS module control circuit.

[0015] Compared with the prior art, one or more embodiments of the above solutions may have the following advantages or beneficial effects: The transcutaneous electrical nerve stimulation (TENS) module control circuit provided in this invention precisely regulates the output voltage through a waveform control unit: under the action of a first control signal, it outputs the positive voltage segment of the driving voltage, and under the action of a second control signal, it outputs the reverse voltage segment of the driving voltage, thereby achieving a stable output of the complete waveform of the driving voltage, significantly improving energy utilization and effectively reducing energy loss. Simultaneously, an optimized boost circuit is used to boost the supply voltage, eliminating the need for a traditional transformer and fundamentally solving the problems of large size and insufficient integration in existing TENS module control circuits. This application provides a high-energy-output, low-loss, highly integrated, and compact TENS module control circuit.

[0016] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the description, claims, and drawings. Attached Figure Description

[0017] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with the embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings: Figure 1 The diagram shown is a schematic diagram of the control circuit of the transcutaneous electrical nerve stimulation module described in an embodiment of this application.

[0018] Figure 2 The diagram shown is a schematic diagram of the circuit structure of a waveform control unit in the transcutaneous electrical nerve stimulation module control circuit described in this application embodiment.

[0019] Figure 3 The diagram shown is a schematic diagram of the circuit structure of another waveform control unit in the transcutaneous electrical nerve stimulation module control circuit described in the embodiments of this application.

[0020] Figure 4The diagram shown is a schematic diagram of the circuit structure of the third waveform control unit in the transcutaneous electrical nerve stimulation module control circuit described in this application embodiment.

[0021] Figure 5 The diagram shows the waveform output of the waveform control unit when the upper and lower arms of the H-bridge circuit are delayed and turned off by the microcontroller unit in the control circuit of the transcutaneous electrical nerve stimulation module described in this application embodiment.

[0022] Figure 6 The diagram shows the waveform output of the waveform control unit when the microcontroller in the control circuit of the transcutaneous electrical nerve stimulation module described in this application does not control the delayed shutdown of the upper and lower arms of the H-bridge circuit.

[0023] Figure 7 This is a schematic diagram of another structure of the control circuit of the transcutaneous electrical nerve stimulation module described in the embodiments of this application.

[0024] Figure 8 The diagram shown is a schematic diagram of the boost circuit in the control circuit of the transcutaneous electrical nerve stimulation module described in this application embodiment.

[0025] Figure 9 The diagram shown is a schematic diagram of the circuit structure of the conduction detection unit in the control circuit of the transcutaneous electrical nerve stimulation module described in this application embodiment.

[0026] Figure 10 The diagram shown is a schematic diagram of the circuit structure of the drive unit in the control circuit of the transcutaneous electrical nerve stimulation module described in this application embodiment.

[0027] Figure 11 The diagram shown is a structural schematic of the massage device described in an embodiment of this application.

[0028] Specific element symbols: 100-Microcontroller unit, 200-Driver unit, 201-Filter amplification circuit, 202-Voltage follower circuit, 300-Waveform control unit, 400-Power supply module, 401-Boost circuit, 402-Voltage regulator circuit, 500-Conduction detection unit, 1000-Massage device, 1001-Transcutaneous electrical nerve stimulation module control circuit, 1002-Transcutaneous electrical nerve stimulation module. Detailed Implementation

[0029] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0030] It should be noted that when a component is referred to as being "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0031] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0032] TENS (Transcutaneous Electrical Nerve Stimulation) is a non-invasive therapeutic technique that stimulates nerves by applying weak electrical currents to the skin surface. It is widely used to relieve acute and chronic pain and promote blood circulation, and its components are often integrated into massage devices. Currently, the control circuits of TENS components in massage devices mostly rely on transformers to achieve DC voltage boosting. However, transformers themselves are relatively large, resulting in an overall large size of the TENS component control circuit, which is difficult to adapt to the application requirements of miniaturized massage devices. At the same time, existing control circuits usually only use the upper or lower half-cycle waveform of the driving voltage to drive the TENS component, which not only limits the operating frequency range of the component (it can only operate in the low-frequency range), but also has problems such as low energy utilization and high power consumption.

[0033] Based on this, this application improves the control circuit of the transcutaneous electrical nerve stimulation module and the massage device in the related technology.

[0034] refer to Figure 1 As shown, the control circuit of the transcutaneous electrical nerve stimulation module in this application embodiment includes a microcontroller unit 100 and a drive unit 200 and a waveform control unit 300 respectively connected to the microcontroller unit 100.

[0035] The microcontroller unit 100 outputs drive control signals to the drive unit 200, and also outputs a first control signal and a second control signal to the waveform control unit 300. The drive unit 200 amplifies and voltage-follows the drive control signals to output a drive voltage VH to the waveform control unit 300. The waveform control unit 300 outputs a positive voltage in the drive voltage VH under the control of the first control signal and a reverse voltage in the drive voltage VH under the control of the second control signal, thereby achieving bidirectional drive of the transcutaneous electrical nerve stimulation module by the drive voltage VH. It should be noted that the microcontroller unit 100 alternately outputs the first and second control signals to the waveform control unit 300, causing the positive and reverse voltages of the drive voltage VH to be output alternately, thus achieving a complete waveform of the output drive voltage VH.

[0036] In this embodiment, the transcutaneous electrical nerve stimulation (TENS) module control circuit achieves stable output of the complete waveform of the driving voltage VH through precise regulation by the waveform control unit 300. This avoids the energy waste caused by waveform loss in the traditional single half-cycle driving mode. It not only significantly reduces ineffective power consumption, but also reduces the power required for a unit stimulation effect through continuous output of the complete waveform, effectively reducing the overall energy loss of the TENS module control circuit and extending the device's battery life. At the same time, it also expands the output frequency range of the TENS module, enabling it to operate in the low-frequency and mid-frequency range, further optimizing the treatment experience in application scenarios such as massage and pain relief.

[0037] In one embodiment, reference is made to Figure 2As shown, the waveform control unit 300 includes an H-bridge circuit, which comprises a first PNP transistor Q3_2, a second PNP transistor Q3_1, a first NPN transistor Q11, and a second NPN transistor Q10. Specifically, the first PNP transistor Q3_2 and the second PNP transistor Q3_1 form the upper arm of the H-bridge circuit, while the first NPN transistor Q11 and the second NPN transistor Q10 form the lower arm. The emitters of both the first PNP transistor Q3_2 and the second PNP transistor Q3_1 serve as the drive voltage input terminals. The collector of the first PNP transistor Q3_2 is connected to the collector of the first NPN transistor Q11, and the collector of the second PNP transistor Q3_1 is connected to the collector of the second NPN transistor Q10. The emitters of both the first NPN transistor Q11 and the second NPN transistor Q10 are grounded. The base of the first PNP transistor Q3_2 and the base of the second NPN transistor Q10 serve as the first control signal input terminal, the base of the second PNP transistor Q3_1 and the base of the first NPN transistor Q11 serve as the second control signal input terminal, the collector of the first PNP transistor Q3_2 serves as the positive output terminal of the waveform control unit 300, and the collector of the second NPN transistor Q10 serves as the negative output terminal of the waveform control unit 300.

[0038] The H-bridge circuit also includes a first current-limiting resistor R23 disposed at the base of the first PNP transistor Q3_2, a second current-limiting resistor R24 ​​disposed at the base of the second PNP transistor Q3_1, a current-limiting resistor R28 disposed at the base of the first NPN transistor Q11, a current-limiting resistor R27 disposed at the base of the second PNP transistor Q3_1, a bias resistor R40 disposed between the base and emitter of the first NPN transistor Q11, and a bias resistor R41 disposed between the base and emitter of the second NPN transistor Q10.

[0039] The microcontroller unit 100 controls the turn-on and turn-off of the first PNP transistor Q3_2 and the second NPN transistor Q10 through the first control signal, and controls the turn-on and turn-off of the second PNP transistor Q3_1 and the first NPN transistor Q11 through the second control signal, so as to realize the alternating output of the forward voltage and the reverse voltage in the drive voltage VH.

[0040] Furthermore, when the driving voltage VH is in a positive voltage output state, the microcontroller 100 controls the first control signal input to the base of the first PNP transistor Q3_2 to be low, the first control signal input to the base of the second NPN transistor Q10 to be high, the second control signal input to the base of the second PNP transistor Q3_1 to be high, and the second control signal input to the base of the first NPN transistor Q11 to be low. At this time, both the first PNP transistor Q3_2 and the second NPN transistor Q10 are in the on state, and both the second PNP transistor Q3_1 and the first NPN transistor Q11 are in the off state. At this time, the positive voltage in the driving voltage VH is input to the positive output terminal TENS+ of the waveform control unit 300 through the first PNP transistor Q3_2, and after passing through the load, it is output to the ground terminal through the negative output terminal TENS- of the waveform control unit 300 and the emitter of the second NPN transistor Q10.

[0041] When the driving voltage VH is in reverse voltage output state, the microcontroller 100 controls the second control signal input to the base of the second PNP transistor Q3_1 to be low, the second control signal input to the base of the first NPN transistor Q11 to be high, the first control signal input to the base of the first PNP transistor Q3_2 to be high, and the first control signal input to the base of the second NPN transistor Q10 to be low. At this time, the second PNP transistor Q3_1 and the first NPN transistor Q11 are both in the on state, and the first PNP transistor Q3_2 and the second NPN transistor Q10 are both in the off state. At this time, the reverse voltage in the driving voltage VH is input to the negative output terminal TENS- of the waveform control unit 300 through the second NPN transistor Q10, and after passing through the load, it is output to the ground terminal through the positive output terminal TENS+ of the waveform control unit 300 and the emitter of the first NPN transistor Q11.

[0042] In one embodiment, reference is made to Figure 3As shown, the H-bridge circuit also includes a third NPN transistor Q4_2 and a fourth NPN transistor Q4_1. The collectors of both transistors Q4_2 and Q4_1 serve as drive voltage inputs, and the emitters of both transistors are grounded. At this time, the base of the first PNP transistor Q3_2 is not directly controlled by the first control signal, and the base of the second PNP transistor Q3_1 is not directly controlled by the second control signal. The collector of the third NPN transistor Q4_2 is connected to the base of the first PNP transistor Q3_2 through a first current-limiting resistor R23, and the collector of the fourth NPN transistor Q4_1 is connected to the base of the second PNP transistor Q3_1 through a second current-limiting resistor R24.

[0043] At this time, the H-bridge circuit also includes a current-limiting resistor R25 set at the base of the third NPN transistor Q4_2, a pull-up resistor R22 set at the collector of the third NPN transistor Q4_2, a current-limiting resistor R26 set at the base of the fourth NPN transistor Q4_1, and a pull-up resistor R21 set at the collector of the fourth NPN transistor Q4_1.

[0044] At this time, the first control signal controls the conduction and disconnection of the first PNP transistor Q3_2 by controlling the conduction and disconnection of the third NPN transistor Q4_2; the second control signal controls the conduction and disconnection of the second PNP transistor Q3_1 by controlling the conduction and disconnection of the fourth NPN transistor Q4_1.

[0045] Furthermore, when the driving voltage VH is in a positive voltage output state, the microcontroller 100 controls the first control signal input to the base of the third NPN transistor Q4_2 to be high, the first control signal input to the base of the second NPN transistor Q10 to be high, the second control signal input to the base of the fourth NPN transistor Q4_1 to be low, and the second control signal input to the base of the first NPN transistor Q11 to be low. At this time, the third NPN transistor Q4_2 is in the conducting state, thereby achieving rapid voltage discharge to the base of the first PNP transistor Q3_2, making the first PNP transistor Q3_2 in the conducting state; simultaneously, the fourth NPN transistor Q4_1 is in the off state, therefore the base of the second PNP transistor Q3_1 is at a high voltage, causing the second PNP transistor Q3_1 to be in the off state; the second NPN transistor Q10 is in the conducting state, and the first NPN transistor Q11 is in the off state. At this time, the positive voltage in the driving voltage VH is input to the positive output terminal TENS+ of the waveform control unit 300 through the first PNP transistor Q3_2, and after passing through the load, it is output to the ground terminal through the negative output terminal TENS- of the waveform control unit 300 and the emitter of the second NPN transistor Q10.

[0046] Furthermore, when the driving voltage VH is in a negative voltage output state, the microcontroller 100 controls the first control signal input to the base of the third NPN transistor Q4_2 to be low, the first control signal input to the base of the second NPN transistor Q10 to be low, the second control signal input to the base of the fourth NPN transistor Q4_1 to be high, and the second control signal input to the base of the first NPN transistor Q11 to be high. At this time, the fourth NPN transistor Q4_1 is in the conducting state, thereby achieving rapid voltage discharge to the base of the second PNP transistor Q3_1, making the second PNP transistor Q3_1 in the conducting state; simultaneously, the third NPN transistor Q4_2 is in the off state, therefore the base of the first PNP transistor Q3_2 is at a high voltage, causing the first PNP transistor Q3_2 to be in the off state; the first NPN transistor Q11 is in the conducting state, and the second NPN transistor Q10 is in the off state. At this time, the driving voltage VH is input to the negative output terminal TENS- of the waveform control unit 300 through the emitter of the second PNP transistor Q3_1, and after passing through the load, it is output to the ground terminal through the positive output terminal TENS+ of the waveform control unit 300 and the emitter of the first NPN transistor Q11.

[0047] The third NPN transistor Q4_2 isolates and protects the first PNP transistor Q3_2, preventing excessive current from flowing through the base of Q3_2 when its base is directly connected to a low voltage, thus avoiding damage. Simultaneously, the third NPN transistor Q4_2 drives the first PNP transistor Q3_2. Similarly, the fourth NPN transistor Q4_1 isolates and protects the second PNP transistor Q3_1, preventing excessive current from flowing through the base of Q3_1 when its base is directly connected to a low voltage, thus avoiding damage. Simultaneously, the fourth NPN transistor Q4_1 drives the second PNP transistor Q3_1.

[0048] In one embodiment, reference is made to Figure 4 As shown, in this embodiment, one PNP transistor in the dual PNP transistor array Q3 can be used as the first PNP transistor Q3_2 in the above circuit, and the other PNP transistor can be used as the second PNP transistor Q3_1 in the above circuit. Similarly, one NPN transistor in the dual NPN transistor array Q4 can be used as the third NPN transistor Q4_2 in the above circuit, and the other NPN transistor can be used as the fourth NPN transistor Q4_1 in the above circuit.

[0049] By employing dual PNP transistor arrays and dual NPN transistor arrays, the integration of the transcutaneous electrical nerve stimulation module control circuit can be improved, and the circuit size can be reduced, making it easier to apply to small massage devices.

[0050] In the above embodiment, the microcontroller 100 needs to control the lower arm of the H-bridge circuit to have a time delay compared to the upper arm when controlling the upper and lower arms to turn off. That is, when the microcontroller 100 controls the first PNP transistor and the second NPN transistor to turn off through the first control signal, the first control signal needs to control the second NPN transistor to turn off with a delay compared to the first PNP transistor; when the microcontroller 100 controls the second PNP transistor and the first NPN transistor to turn off through the second control signal, the second control signal controls the first NPN transistor to turn off with a delay compared to the second PNP transistor. Further, it is to control the first PNP transistor Q3_2 or the second PNP transistor Q3_1 of the upper arm of the H-bridge circuit to turn off first, and then control the first NPN transistor Q11 or the second NPN transistor Q10 of the lower arm of the H-bridge circuit to turn off, thus delaying the turn-off of the lower arm of the H-bridge circuit based on the turn-off time of the upper arm. This configuration allows the charge at both ends of the load to be discharged quickly through the NPN transistor in the lower arm, thus ensuring waveform integrity.

[0051] refer to Figure 5This is a schematic diagram of the waveform output by the waveform control unit when the upper and lower arms of the H-bridge circuit are turned off with a delay, as controlled by the microcontroller unit. Figure 6 This is a schematic diagram of the waveform output by the waveform control unit when the microcontroller does not control the delayed turn-off of the upper and lower arms of the H-bridge circuit. (Reference) Figure 5 and Figure 6 As shown, the waveform output by the waveform control unit with delayed shutdown is more complete.

[0052] refer to Figure 7 As shown, the transcutaneous electrical nerve stimulation (TENS) module control circuit also includes a power supply module 400, which includes a boost circuit 401 and a voltage regulator circuit 402. The boost circuit 401 is configured to boost the original supply voltage B+ to output a first supply voltage A. The voltage regulator circuit 402 is configured to regulate the original supply voltage B+ to output a second supply voltage C.

[0053] In one embodiment, reference is made to Figure 8 As shown, the specific boost circuit 401 includes a DC-DC power supply chip U1, a boost inductor L1, an input filter capacitor C1, an output filter capacitor C3, a first voltage divider resistor R2, and a second voltage divider resistor R6.

[0054] Furthermore, the input terminal of the DC-DC power chip U1 serves as the input terminal of the boost circuit 401, with the original supply voltage B+; the switching node of the DC-DC power chip U1 serves as the output terminal of the boost circuit 401; the input filter capacitor C1 is connected between the input terminal of the DC-DC power chip U1 and the ground terminal; the output filter capacitor C3 is connected between the output terminal of the boost circuit and the ground terminal; the boost inductor L1 is connected between the input terminal of the DC-DC power chip U1 and the switching node; the first voltage divider resistor R2 is connected between the output terminal of the boost circuit and the feedback terminal; and the second voltage divider resistor R6 is connected between the feedback terminal of the DC-DC power chip U1 and the ground terminal.

[0055] The DC-DC power supply chip U1 can be an LP3318B5F power supply chip, or other suitable power supply chips. The following explanation uses the LP3318B5F power supply chip as an example. The specific boost circuit 401 also includes a PMOS transistor Q12, a fifth NPN transistor Q13, a freewheeling diode D1, a bias resistor R42, a current-limiting resistor R43, a current-limiting resistor R3, a filter capacitor C25, and a filter capacitor C4. The base of the fifth NPN transistor Q13 is connected to the microcontroller unit through the protection resistor R43. The control signal output by the microcontroller unit controls the conduction and turn-off of the fifth NPN transistor Q13. The collector of the fifth NPN transistor Q13 is connected to the gate of the PMOS transistor Q12, and the emitter of the fifth NPN transistor Q13 is grounded. The source of PMOS transistor Q12 replaces the input terminal of DC-DC power supply chip U1 as the input terminal of boost circuit 401, and is connected to the original supply voltage B+. The drain of PMOS transistor Q12 is connected to the input terminal of DC-DC power supply chip U1, and a bias resistor R42 is connected between the source and gate of PMOS transistor Q12. The enable terminal of DC-DC power supply chip U1 is connected to the input terminal of DC-DC power supply chip U1 through a protection resistor R3, and the drain of PMOS transistor Q12 is connected to the input terminal of DC-DC power supply chip U1. Filter capacitor C25 is connected between the cathode of freewheeling diode D1 and the feedback terminal of DC-DC power supply chip U1, and filter capacitor C4 is connected between the cathode of freewheeling diode D1 and ground.

[0056] PMOS transistor Q12 serves as the pre-switch of boost circuit 401. Its switching state is controlled by the fifth NPN transistor Q13. In low voltage or power-off states, it can completely shut down the connection between boost circuit 401 and the original power supply voltage, thus achieving low power consumption.

[0057] When the microcontroller outputs a control signal to turn on the fifth NPN transistor Q13, the gate voltage of PMOS transistor Q12 decreases, and PMOS transistor Q12 turns on. The original supply voltage B+ is input to the input terminal of DC-DC power supply chip U1; the voltage is boosted to obtain the first supply voltage A. When the microcontroller outputs a control signal to turn off the fifth NPN transistor Q13, the gate voltage of PMOS transistor Q12 increases, and PMOS transistor Q12 turns off. The boost circuit 401 does not work.

[0058] This embodiment adopts a boost circuit 401 solution that includes an integrated DC-DC power supply chip. By simplifying peripheral components, it achieves high-efficiency voltage boosting, which not only significantly reduces the size of the device, but also significantly improves the integration and miniaturization level of the transcutaneous electrical nerve stimulation module control circuit.

[0059] The voltage regulator circuit 402 is a commonly used circuit that includes a voltage regulator. It uses the voltage regulator and its peripheral circuitry to regulate the original supply voltage B+ to output the second supply voltage C. Detailed specifications are omitted here. The first supply voltage is higher than the second supply voltage.

[0060] refer to Figure 7 As shown, the control circuit of the transcutaneous electrical nerve stimulation module also includes a continuity detection unit 500, which is connected to the waveform control unit 300 and the micro control unit 100 respectively, to detect whether the transcutaneous electrical nerve stimulation module is conducting, so as to achieve the purpose of detecting the working status of the transcutaneous electrical nerve stimulation module.

[0061] In one embodiment, reference is made to Figure 9 As shown, the continuity detection unit 500 specifically includes a sixth NPN transistor Q6, a first resistor R32, a second resistor R34, a third resistor R31, a second diode D18, a third diode D3, and a second capacitor C26. The first resistor R32 and the second resistor R34 are connected in series and then in parallel across the second capacitor C26. The second diode D18 and the third diode D3 are connected in series in the forward direction and also in parallel across the second capacitor C26. The second supply voltage C supplies power to one end of the third resistor R31, and the other end of the third resistor R31 is connected to the collector of the sixth NPN transistor Q6. The emitter of the sixth NPN transistor Q6 is grounded, and the base of the sixth NPN transistor Q6 is connected between the first resistor R32 and the second resistor R34. The cathode of the second diode D18 serves as the input terminal of the continuity detection unit 500, and the emitter of the sixth NPN transistor Q6 serves as the output terminal of the continuity detection unit 500, connected to the microcontroller unit 100. The anode of the third diode D3 is grounded.

[0062] The second diode D18 and the third diode D3, connected in series, provide a discharge channel, and there is a voltage drop between them. The first resistor R32 and the second resistor R34 act as voltage dividers and current limiters. When the transcutaneous electrical nerve stimulation module is not turned on, the continuity detection unit 500 is open, the voltage division between the first resistor R32 and the second resistor R34 is zero, and the sixth NPN transistor Q6 is off. At this time, the continuity detection signal TOUCH_H of the continuity detection unit 500 is pulled up to a high potential by the third resistor R31, indicating that the transcutaneous electrical nerve stimulation module is not turned on. When the transcutaneous electrical nerve stimulation module is turned on, the voltage division between the first resistor R32 and the second resistor R34 is not zero, the base of the sixth NPN transistor Q6 is high, the sixth NPN transistor Q6 is on, and the continuity detection signal TOUCH_H of the continuity detection unit 500 is pulled low. Therefore, the conduction status of the transcutaneous electrical nerve stimulation (TENS) module can be monitored by continuously detecting the level of the conduction detection signal TOUCH_H. This embodiment uses a conduction detection unit 500 to detect the conduction status of the TENS module in real time, ensuring the safety of the TENS module control circuit and improving the overall circuit reliability.

[0063] In one embodiment, reference is made to Figure 10 As shown, the drive unit 200 includes a filter amplifier circuit 201 and a voltage follower circuit 202 connected in series; the filter amplifier circuit 201 is configured to filter the drive control signal and amplify it in phase to output an amplified voltage; the voltage follower circuit 202 is configured to voltage follow the amplified voltage to output a drive voltage VH.

[0064] Furthermore, the filter amplifier circuit 201 includes a non-inverting amplifier U4 and its peripheral circuitry to filter and amplify the drive control signal in the same phase. The following explanation uses an SGM8273-1AXN5G as an example of the non-inverting amplifier U4. Resistors R20 and R19 are connected sequentially to the positive input terminal of the non-inverting amplifier U4; one end of capacitor C14 is connected between resistors R20 and R19, and the other end is grounded; the drive control signal is input to the positive input terminal of the non-inverting amplifier U4 through resistors R20 and R19, and resistors R19 and capacitor C14 filter the drive control signal. Resistor R19 and capacitor C14 form a low-pass filter. The microcontroller unit 100 outputs corresponding PWM signals according to different original waveforms, which are then filtered by the low-pass filter to generate different original waveforms, such as square waves, triangle waves, and sine waves.

[0065] A resistor R20 is connected to the power supply voltage input terminal of the non-inverting amplifier U4. The first supply voltage A output by the boost circuit 401 is input to the power supply voltage input terminal of the non-inverting amplifier U4 through resistor R20. A resistor R17 and a capacitor C12 are connected in parallel between the inverting input terminal and the output terminal of the non-inverting amplifier U4 to filter the amplified output voltage. A resistor R18 is also connected between the inverting input terminal and the ground terminal of the non-inverting amplifier U4. The original waveform output by the microcontroller unit 100 is amplified by the voltage factor of the non-inverting amplifier U4, where resistor R17 is the feedback resistor and resistor R18 is the voltage divider resistor. The amplification factor of the non-inverting amplifier U4 is calculated as (1 + (Rf / R18)).

[0066] The voltage follower circuit 202 includes an NPN transistor and its peripheral circuitry to perform voltage following of the amplified voltage to output a drive voltage VH. Specifically, the voltage follower circuit 202 includes a seventh NPN transistor Q1, resistors R8 and R4, and a capacitor C7. Resistor R4 and capacitor C7 are connected in series between the base of the seventh NPN transistor Q1 and ground. One end of resistor R8 is connected between resistor R4 and capacitor C7, and the other end is connected to the output of the non-inverting amplifier U4. The collector of the seventh NPN transistor Q1 is connected to the first supply voltage A output by the boost circuit 401, and the emitter of the seventh NPN transistor Q1 serves as the output of the voltage follower circuit 202 to output the drive voltage VH.

[0067] The microcontroller unit 100 in the above embodiments can be a model with an integrated Bluetooth module, enabling the control circuit of the transcutaneous electrical nerve stimulation (TENS) module to establish a communication connection with an external mobile terminal via Bluetooth. This allows users to control the output of the TENS module control circuit through an external terminal, and further supports users to adjust the pulse width and frequency of the output signal of the control circuit through an external mobile terminal. For example, a microcontroller unit with integrated BLE function, such as the AC6321A4, can be specifically selected. The microcontroller unit 100 can also be set to other suitable models, and no fixed limitation is imposed here.

[0068] The transcutaneous electrical nerve stimulation (TENS) module control circuit provided in this invention achieves precise regulation through a waveform control unit 300: it outputs the positive segment of the driving voltage VH under the action of a first control signal and the reverse segment under the action of a second control signal, thereby stably generating a complete driving waveform, significantly improving energy utilization efficiency and effectively reducing losses. Simultaneously, the optimized boost circuit 401 boosts the supply voltage, eliminating the need for a traditional transformer and fundamentally solving the problems of large size and insufficient integration in existing circuits. This invention provides a high-energy-output, low-loss, highly integrated, and miniaturized TNS module control circuit.

[0069] refer to Figure 11 As shown, in order to better implement the transcutaneous electrical nerve stimulation module control circuit in any of the above embodiments, based on the transcutaneous electrical nerve stimulation module control circuit described above, this application embodiment also provides a massage device 1000. The massage device 1000 includes the transcutaneous electrical nerve stimulation module control circuit 1001 and the transcutaneous electrical nerve stimulation module 1002 as described above, and the transcutaneous electrical nerve stimulation module 1002 is connected to the transcutaneous electrical nerve stimulation module control circuit 1001.

[0070] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0071] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0072] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0073] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0074] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A transcutaneous electrical nerve stimulation module control circuit applied to a massage device, characterized in that, The micro control unit, a driving unit and a waveform control unit connected with the micro control unit respectively, the driving unit is connected with the waveform control unit; The micro control unit is used for outputting a driving control signal to the driving unit, and outputting a first control signal and a second control signal to the waveform control unit; The driving unit is used for amplifying and voltage following the driving control signal to output a driving voltage to the waveform control unit; The waveform control unit is used for outputting a forward voltage in the driving voltage under the control of the first control signal, and outputting a reverse voltage in the driving voltage under the control of the second control signal, to realize bidirectional driving of the driving voltage to the transcutaneous electrical nerve stimulation module.

2. The transcutaneous electrical nerve stimulation module control circuit of claim 1, wherein, The waveform control unit comprises an H-bridge circuit, the H-bridge circuit comprises a first PNP type transistor, a second PNP type transistor, a first NPN type transistor and a second NPN type transistor; The first PNP type transistor and the second PNP type transistor are used as the upper arm of the H-bridge circuit, the first NPN type transistor and the second NPN type transistor are used as the lower arm of the H-bridge circuit, the emitter of the first PNP type transistor and the emitter of the second PNP type transistor are used as the driving voltage input end, the emitter of the first NPN type transistor and the emitter of the second NPN type transistor are grounded, the first control signal controls the conduction and the turn-off of the first PNP type transistor and the second NPN type transistor, the second control signal controls the conduction and the turn-off of the second PNP type transistor and the first NPN type transistor, the collector of the first PNP type transistor is used as the positive output end of the waveform control unit, and the collector of the second NPN type transistor is used as the negative output end of the waveform control unit.

3. The transcutaneous electrical nerve stimulation module control circuit of claim 2, wherein, The H-bridge circuit further comprises a third NPN type transistor, a fourth NPN type transistor, a first current limiting resistor and a second current limiting resistor, the collector of the third NPN type transistor and the collector of the fourth NPN type transistor are used as the driving voltage input end, the emitter of the third NPN type transistor and the emitter of the fourth NPN type transistor are grounded, the collector of the third NPN type transistor is connected with the base of the first PNP type transistor through the first current limiting resistor, and the collector of the fourth NPN type transistor is connected with the base of the second PNP type transistor through the second current limiting resistor; The first control signal controls the conduction and the turn-off of the first PNP type transistor by controlling the conduction and the turn-off of the third NPN type transistor, and the second control signal controls the conduction and the turn-off of the second PNP type transistor by controlling the conduction and the turn-off of the fourth NPN type transistor.

4. The transcutaneous electrical nerve stimulation module control circuit of claim 3, wherein, When the first control signal controls the turn-off of the first PNP type transistor and the second NPN type transistor, the first control signal controls the delayed turn-off of the second NPN type transistor compared with the first PNP type transistor. When the second control signal controls the turn-off of the second PNP triode and the first NPN triode, the second control signal controls the delayed turn-off of the first NPN triode compared with the second PNP triode.

5. The transcutaneous electrical nerve stimulation module control circuit of claim 1, wherein, The transcutaneous electrical nerve stimulation module control circuit further comprises a power supply module, the power supply module comprises a boost circuit and a voltage stabilizing circuit, the boost circuit is arranged to boost the original supply voltage to output a first supply voltage, and the voltage stabilizing circuit is arranged to stabilize the original supply voltage to output a second supply voltage, wherein the first supply voltage is higher than the second supply voltage.

6. The transcutaneous electrical nerve stimulation module control circuit of claim 5, wherein, The boost circuit comprises a DC-DC power supply chip, a boost inductor, an input filter capacitor, an output filter capacitor, a first voltage divider resistor and a second voltage divider resistor. The input end of the DC-DC power supply chip serves as the input end of the boost circuit, the switching node of the DC-DC power supply chip serves as the output end of the boost circuit, the input filter capacitor is connected between the input end and the ground end of the DC-DC power supply chip, the output filter capacitor is connected between the switching node and the ground end of the DC-DC power supply chip, the boost inductor is connected between the input end and the switching node of the DC-DC power supply chip, the first voltage divider resistor is connected between the switching node and the feedback end of the DC-DC power supply chip, and the second voltage divider resistor is connected between the feedback end and the ground end of the DC-DC power supply chip.

7. The transcutaneous electrical nerve stimulation module control circuit of claim 5, wherein, The transcutaneous electrical nerve stimulation module control circuit further comprises a conduction detection unit connected with the waveform control unit and the micro control unit respectively, the conduction detection unit comprises a sixth NPN triode, a first resistor, a second resistor, a third resistor, a second diode, a third diode and a second capacitor. The first resistor and the second resistor are connected in series and then connected in parallel across the second capacitor, the second diode and the third diode are connected in series and then connected in parallel across the second capacitor, the second supply voltage supplies power to one end of the third resistor, the other end of the third resistor is connected with the collector of the sixth NPN triode, the emitter of the sixth NPN triode is grounded, the base of the sixth NPN triode is connected between the first resistor and the second resistor, the anode of the second diode serves as the input end of the conduction detection unit, the emitter of the sixth NPN triode serves as the output end of the conduction detection unit and is connected with the micro control unit, and the cathode of the third diode is grounded.

8. The transcutaneous electrical nerve stimulation module control circuit of claim 1, wherein, The driving unit comprises a filter amplification circuit and a voltage follower circuit connected in series; the filter amplification circuit is arranged to filter and in-phase amplify the driving control signal to output an amplified voltage; and the voltage follower circuit is arranged to voltage follow the amplified voltage to output a driving voltage.

9. The transcutaneous electrical nerve stimulation module control circuit of claim 1, wherein, The micro control unit comprises a Bluetooth module, and the Bluetooth module is used to establish communication with an external mobile terminal.

10. A massaging apparatus characterized by comprising: The transcutaneous electrical nerve stimulation module and the transcutaneous electrical nerve stimulation module control circuit according to any one of claims 1-9 are connected.

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