Multi-stage temperature self-adaptive regulation and control method and system for silylene heating chip

Abstract

The invention relates to the technical field of new materials and micro-nano manufacturing, and discloses a multi-stage temperature self-adaptive regulation and control method and system for a silylene heating chip, and the method comprises the steps: collecting main region temperature response data and secondary region temperature response data of a main control heating region and a secondary auxiliary heating region under stepped test current; analyzing the coupling thermal resistance matrix of the main control heating area and the secondary auxiliary heating area to establish a thermodynamic state space model of the silylene heating chip; calculating a main area independent temperature track of the main control heating area and a secondary area independent temperature track of the secondary auxiliary heating area; the partition feedforward control voltage and the partition temperature deviation of the silylene heating chip are calculated; and calculating a partition feedback control voltage of the silylene heating chip, and generating a partition driving control signal of the silylene heating chip so as to execute multi-stage temperature self-adaptive regulation and control of the silylene heating chip. According to the invention, the uniformity of multi-stage temperature self-adaptive regulation and control of the silylene heating chip can be improved.

Description

TECHNICAL FIELD

[0001] The application relates to a multi-stage temperature self-adaptive regulation method and system of a silicene heating chip, and belongs to the technical field of new materials and micro-nano manufacturing. BACKGROUND

[0002] The multi-stage temperature self-adaptive regulation of the silicene heating chip refers to a control architecture with multiple levels and partitioning, and the combination of real-time sensing and dynamic modeling, so that the chip can autonomously and intelligently adapt to changing task requirements, internal physical effects and external environmental interference, thereby realizing a rapid, accurate and uniform control process of the surface temperature of the chip and realizing a paradigm shift from "passive response" to "active prediction and cooperation". The silicene heating chip can perform outstanding performance far exceeding traditional heating methods under various complex working conditions.

[0003] The traditional temperature regulation of the silicene heating chip usually adopts centralized PID control based on a single temperature sensor, that is, the entire chip is regarded as a homogeneous heat source, and the overall heating power is linearly adjusted according to the temperature difference between the set point and the measured point through a feedback loop. This method ignores the inherent thermal coupling effect and physical non-uniformity between the primary and secondary heating zones of the chip, resulting in serious temperature overshoot and regional temperature difference during rapid heating, thereby making the temperature uniformity of the partition compensation of the silicene heating chip poor. SUMMARY

[0004] The application provides a multi-stage temperature self-adaptive regulation method and system of a silicene heating chip, which mainly aims to improve the uniformity of the multi-stage temperature self-adaptive regulation of the silicene heating chip.

[0005] To achieve the above-mentioned purpose, the application provides a multi-stage temperature self-adaptive regulation method of a silicene heating chip, which comprises the following steps: analyzing a primary heating zone and a secondary auxiliary heating zone of the silicene heating chip, and collecting primary zone temperature response data and secondary zone temperature response data of the primary heating zone and the secondary auxiliary heating zone under a stepped test current; According to the primary zone temperature response data and the secondary zone temperature response data, analyzing the coupled thermal resistance matrix of the primary heating zone and the secondary auxiliary heating zone to establish a thermodynamic state space model of the silicene heating chip; receiving a total heating task of the silicene heating chip, combining the total heating task, a pre-set multi-stage cooperative heating strategy library and the thermodynamic state space model, calculating a primary zone independent temperature trajectory of the primary heating zone and a secondary zone independent temperature trajectory of the secondary auxiliary heating zone; Based on the primary zone independent temperature trajectory and the secondary zone independent temperature trajectory, calculating the partition feedforward control voltage and the partition temperature deviation of the silicene heating chip; According to the partition temperature deviation, a partition feedback control voltage of the silicon carbide heating chip is calculated, a partition driving control signal of the silicon carbide heating chip is generated by combining the partition feedforward control voltage and the partition feedback control voltage, and multi-stage temperature self-adaptive regulation and control of the silicon carbide heating chip is performed.

[0006] Optionally, the analysis of the main control heating area and the secondary auxiliary heating area of the silicon carbide heating chip comprises: According to the geometric structure data, the material attribute data and the electrical structure data, a thermal node of the silicon carbide heating chip is defined; The self-heat resistance, the heat capacity and the coupling heat resistance of the thermal node are calculated to establish a thermal network of the silicon carbide heating chip; The main control heating area and the secondary auxiliary heating area of the silicon carbide heating chip are analyzed through the thermal network.

[0007] Optionally, the calculation of the self-heat resistance, the heat capacity and the coupling heat resistance of the thermal node comprises: The heating area, the substrate thickness and the effective heat penetration depth of the thermal node are analyzed; The self-heat resistance of the thermal node is analyzed based on the heating area and the substrate thickness; The thermal time constant of the thermal node is analyzed; The heat capacity of the thermal node is calculated in combination with the thermal time constant and the effective heat penetration depth; The heating temperature rise value of the thermal node corresponding to an associated thermal node under constant heating power is identified; The coupling heat resistance of the thermal node and the associated thermal node is calculated based on the heating temperature rise value

[0008] Optionally, the analysis of the self-heat resistance of the thermal node based on the heating area and the substrate thickness comprises: The node structure features and the boundary conditions of the thermal node are identified to define the lateral thermal diffusion constant and the longitudinal thermal conduction constant of the thermal node; The self-heat resistance of the thermal node is calculated based on the heating area, the substrate thickness, the lateral thermal diffusion constant and the longitudinal thermal conduction constant by using the following formula: ; wherein, Rth represents the self-heat resistance of the thermal node, k represents the substrate thermal conductivity of the thermal node, A represents the heating area of the thermal node, ​a transverse thermal diffusivity of the thermal node, a longitudinal thermal conductivity of the thermal node, a substrate thickness of the thermal node.

[0009] Optionally, the analyzing the coupling thermal resistance matrix of the primary heating zone and the secondary auxiliary heating zone according to the primary zone temperature response data and the secondary zone temperature response data comprises: calculating an equivalent coupling thermal resistance of the primary heating zone and the secondary auxiliary heating zone according to the primary zone temperature response data and the secondary zone temperature response data; calculating an equivalent thermal coupling coefficient of the primary heating zone and the secondary auxiliary heating zone through the equivalent coupling thermal resistance; establishing the coupling thermal resistance matrix of the primary heating zone and the secondary auxiliary heating zone based on the equivalent thermal coupling coefficient.

[0010] Optionally, the establishing the thermodynamic state space model of the silicene heating chip comprises: defining thermodynamic parameters of the silicene heating chip, wherein the thermodynamic parameters comprise state variables, input variables and output variables; constructing a heat capacity matrix of the silicene heating chip; establishing a thermodynamic state space equation of the silicene heating chip based on the coupling thermal resistance matrix of the silicene heating chip, the thermodynamic parameters and the heat capacity matrix; establishing the thermodynamic state space model of the silicene heating chip through the thermodynamic state space equation.

[0011] Optionally, the establishing the thermodynamic state space equation of the silicene heating chip based on the coupling thermal resistance matrix of the silicene heating chip, the thermodynamic parameters and the heat capacity matrix comprises: calculating a matrix inverse of the heat capacity matrix; calculating a system thermal conductance matrix of the silicene heating chip according to the coupling thermal resistance matrix; establishing the thermodynamic state space equation of the silicene heating chip according to the matrix inverse, the system thermal conductance matrix, the thermodynamic parameters and the heat capacity matrix by using the following formula: ; wherein, denotes a time derivative of a state variable in the thermodynamic parameters, denotes the state variable in the thermodynamic parameters, denotes the matrix inverse of the heat capacity matrix, denotes the heat capacity matrix, denotes the system thermal conductance matrix, denotes an input variable in the thermodynamic parameters.

[0012] Optionally, the combination of the total heating task, the preset multi-level collaborative heating strategy library and the thermodynamic state space model, the main zone independent temperature trajectory of the main control heating zone and the secondary zone independent temperature trajectory of the secondary auxiliary heating zone are calculated, comprising: extracting the heating key parameters of the total heating task; based on the heating key parameters, matching the collaborative heating strategy in the multi-level collaborative heating strategy library; based on the heating key parameters, calculating the main zone independent temperature trajectory of the main control heating zone; According to the main zone independent temperature trajectory and the thermodynamic state space model, the open-loop analysis temperature of the secondary auxiliary heating zone is analyzed; Combined with the open-loop analysis temperature, the collaborative heating strategy and the heating key parameters, the secondary zone independent temperature trajectory of the secondary auxiliary heating zone is generated.

[0013] Optionally, the calculation of the partition feedforward control voltage and the partition temperature deviation of the silicene heating chip based on the main zone independent temperature trajectory and the secondary zone independent temperature trajectory comprises: calculate the main zone temperature change rate and the secondary zone temperature change rate of the main zone independent temperature trajectory and the secondary zone independent temperature trajectory; Combined with the main zone independent temperature trajectory, the secondary zone independent temperature trajectory, the main zone temperature change rate and the secondary zone temperature change rate, the partition feedforward heat power of the silicene heating chip is calculated; analyze the resistance-temperature characteristics of the silicene heating chip; Based on the partition feedforward heat power and the resistance-temperature characteristics, the partition feedforward control voltage of the silicene heating chip is determined; Collect the partition actual temperature of the silicene heating chip to analyze the partition temperature deviation of the silicene heating chip.

[0014] In order to solve the above problems, the present application also provides a multi-level temperature self-adaptive regulation system of silicene heating chip, the system comprises: Chip main and secondary partition module, for analyzing the main control heating zone and the secondary auxiliary heating zone of the silicene heating chip, and collecting the main zone temperature response data and the secondary zone temperature response data of the main control heating zone and the secondary auxiliary heating zone under the stepped test current; State space model construction module, for analyzing the coupled thermal resistance matrix of the main control heating zone and the secondary auxiliary heating zone according to the main zone temperature response data and the secondary zone temperature response data, to establish the thermodynamic state space model of the silicene heating chip; The temperature trajectory analysis module is used to receive the overall heating task of the silicon-ene heating chip, and combine the overall heating task, the pre-set multi-level collaborative heating strategy library and the thermodynamic state space model to calculate the main independent temperature trajectory of the main control heating zone and the secondary independent temperature trajectory of the secondary auxiliary heating zone. The feedforward control voltage determination module is used to calculate the partition feedforward control voltage and partition temperature deviation of the silicon-ene heating chip based on the independent temperature trajectory of the main region and the independent temperature trajectory of the secondary region. A multi-level temperature control module is used to calculate the partition feedback control voltage of the siloxane heating chip based on the partition temperature deviation, and combine the partition feedforward control voltage and the partition feedback control voltage to generate the partition drive control signal of the siloxane heating chip to perform multi-level temperature adaptive regulation of the siloxane heating chip.

[0015] First, this solution uses a stepped testing method to accurately identify the self-heating characteristics and thermal coupling coefficients between the main control area and the secondary auxiliary areas. This transforms the originally vague and empirical control problem into a clear and calculable mathematical model problem. This not only lays a solid theoretical foundation for precise control but also enables the system to proactively anticipate and compensate for heat transfer between areas, fundamentally solving the problem of temperature runaway and unevenness caused by thermal coupling. Second, this solution introduces a trajectory planning mechanism based on a multi-level collaborative heating strategy library, giving the system unprecedented task adaptability and intelligence. It can intelligently call the optimal solution from the strategy library according to the overall heating task, planning ideal and dynamic temperature trajectories for the main and secondary areas respectively. This hierarchical decision-making model of "task-strategy-trajectory" makes chip heating no longer a blind process but a planned and collaborative one. The execution process greatly enhances the system's application flexibility and intelligence. Furthermore, this solution employs a feedforward-feedback composite control architecture, achieving a perfect balance between response speed and control accuracy. Simple feedforward control relies on model accuracy and is sensitive to disturbances; while simple feedback control has inherent delays and struggles to achieve rapid tracking. This solution organically combines the two: using the partitioned feedforward control voltage calculated from the state-space model and target trajectory, it can "predict" and dominate temperature change trends, achieving millisecond-level rapid response and effectively overcoming system thermal inertia. Simultaneously, the partitioned feedback control voltage corrects temperature deviations caused by uncertainties such as model errors and environmental disturbances in real time, ensuring the final control accuracy and robustness. This dual-insurance mechanism of "active attack + passive correction" enables the system to maintain extremely high stability and reliability even under complex operating conditions. Therefore, this invention can improve the uniformity of multi-level temperature adaptive regulation in silicon-ene heating chips. Attached Figure Description

[0016] Figure 1This is a flowchart illustrating a multi-level temperature adaptive control method for a silicon-ene heating chip according to an embodiment of the present invention. Figure 2 This is a schematic diagram of a module for implementing the multi-level temperature adaptive control method of the silicon-ene heating chip according to an embodiment of the present invention.

[0017] The objectives, features, and advantages of this invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0018] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0019] This application provides a multi-level temperature adaptive control method for a silene heating chip. The executing entity of this multi-level temperature adaptive control method for the silene heating chip includes, but is not limited to, at least one of the following electronic devices that can be configured to execute the method provided in this application: a server, a terminal, etc. In other words, the multi-level temperature adaptive control method for the silene heating chip can be executed by software or hardware installed on a terminal device or a server device. The server includes, but is not limited to, a single server, a server cluster, a cloud server, or a cloud server cluster.

[0020] Reference Figure 1 The diagram shown is a flowchart illustrating a multi-level temperature adaptive control method for a siloxane heating chip according to an embodiment of the present invention. In this embodiment, the multi-level temperature adaptive control method for the siloxane heating chip includes: S1. Analyze the main control heating area and the secondary auxiliary heating area of ​​the silicon-ene heating chip, and collect the temperature response data of the main area and the secondary area of ​​the main control heating area and the secondary auxiliary heating area under the stepped test current.

[0021] The analysis of the main control heating zone and secondary auxiliary heating zone of the silicon-ene heating chip in this invention can provide a basis for the personalization of subsequent control strategies.

[0022] In detail, the analysis of the main control heating area and the secondary auxiliary heating area of ​​the silicon-ene heating chip includes: Collect the geometric structure data, material property data, and electrical structure data of the siloxane heating chip; Based on the geometric structure data, material property data, and electrical structure data, the thermal nodes of the siloxane heating chip are defined. Calculate the self-thermal resistance, thermal capacity, and coupling thermal resistance of the thermal nodes to establish the thermal network of the siloxane heating chip; The main control heating area and secondary auxiliary heating area of ​​the silicon-ene heating chip are analyzed using the thermal network.

[0023] The geometric structure data refers to a set of parameters describing the physical shape, size, spatial layout, and relationship with the substrate of each heating unit in the siloxane heating chip, including parameters such as partition shape and area, boundary and center coordinates, and relative spacing. The material property data refers to a set of parameters describing the inherent thermal, electrical, and physical properties of the materials constituting each functional layer of the siloxane heating chip, such as siloxane layer properties, substrate properties, and interface / passivation layer properties. The electrical structure data refers to a set of parameters describing the electrical connection and isolation characteristics of how electrical energy is transmitted and distributed to each independent heating unit of the chip, such as electrode configuration, lead layout, and connection... Based on parameters such as topology, the thermal node refers to an abstract, discrete unit considered to have a uniform internal temperature in the lumped-parameter thermal model constructed for the chip. The thermal network refers to an equivalent circuit model that simulates the heat storage and transfer path, formed by interconnecting the thermal nodes through thermal resistance and considering their heat capacity to ground. The main control heating zone refers to a specific area in the multiple heating zones of the silicon-ene heating chip that is given the core dominant function. The secondary auxiliary heating zone refers to the peripheral or local heating area in the multiple heating zones of the silicon-ene heating chip that is used to assist the main control heating zone to achieve a higher level of control.

[0024] Further, the calculation of the self-thermal resistance, thermal capacity, and coupling thermal resistance of the thermal node includes: The heating zone area, substrate thickness, and effective thermal penetration depth of the thermal node were analyzed. Based on the area of ​​the heating zone and the thickness of the substrate, the self-thermal resistance of the thermal node is analyzed; Analyze the thermal time constant of the aforementioned thermal nodes; The heat capacity of the thermal node is calculated by combining the thermal time constant and the effective thermal penetration depth. Identify the heating temperature rise value of the associated thermal node corresponding to the thermal node under constant heating power; Based on the heating temperature rise value, the coupling thermal resistance of the thermal node and the associated thermal node is calculated.

[0025] The heated area refers to the total projected area of ​​a single thermal node on the chip plane, and the substrate thickness refers to the length of the main path from the silicon-ene heated area downwards to the heat sink. For example, if the silicon-ene is grown at 300... On a thick silicon wafer, the substrate thickness would be 300. The effective thermal penetration depth refers to the effective longitudinal distance from the silane heating zone to the interior of the substrate during transient heating. The thermal time constant refers to the dynamic response parameter of the rate of temperature change of a thermal node. The constant heating power refers to the constant electrical power applied to a specific thermal node during calibration experiments. The heating temperature rise value refers to the increase in temperature of a thermal node relative to the initial ambient temperature after it reaches thermal steady state under constant heating power.

[0026] Furthermore, the analysis of the self-thermal resistance of the thermal node based on the area of ​​the heating zone and the thickness of the substrate includes: Identify the nodal structure features and boundary conditions of the thermal nodes to define the transverse thermal diffusion constant and longitudinal thermal conduction constant of the thermal nodes; The self-heating resistance of the thermal node is calculated based on the heating zone area, the substrate thickness, the transverse thermal diffusion constant, and the longitudinal thermal conduction constant.

[0027] The node structure features refer to the set of characteristics describing the geometry of the thermal node itself and its spatial layout on the chip, such as the ratio of geometry to perimeter and area, and the ratio of perimeter to area. The boundary conditions refer to the physical mechanisms describing the loss of heat from the bottom surface of the substrate to the external macroscopic environment. The lateral thermal diffusion constant refers to the efficiency of heat diffusion in the lateral plane of the substrate under specific node structure features. The longitudinal thermal conductivity constant refers to the efficiency of heat conduction through the substrate thickness and directed to the heat sink under specific boundary conditions. The substrate thermal conductivity refers to the inherent physical property of the substrate material itself, which measures its ability to conduct heat.

[0028] Furthermore, as another embodiment of the present invention, the self-heating resistance is calculated using the following formula: ; in, Indicates the self-thermal resistance of a thermal node. Indicates the base thermal conductivity of the thermal nodes. This represents the area of ​​the heated region at the thermal node. This represents the transverse thermal diffusion constant of a thermal node. This represents the longitudinal heat conduction constant of a thermal node. This indicates the substrate thickness of the thermal node.

[0029] It should be explained that the stepped test current refers to a current excitation signal that changes stepwise with time and is specifically designed for identifying the thermal parameters of the system. The main zone temperature response data refers to the set of all data related to the dynamic temperature change process of the main control heating zone, which is collected in real time during the application of the stepped test current. The secondary zone temperature response data refers to the set of all data related to the temperature change of each secondary auxiliary heating zone, which is collected in real time during the application of the stepped test current only to the main control heating zone.

[0030] S2. Based on the temperature response data of the main region and the temperature response data of the secondary region, analyze the coupling thermal resistance matrix of the main control heating zone and the secondary auxiliary heating zone to establish the thermodynamic state space model of the silicon-ene heating chip.

[0031] The present invention analyzes the coupling thermal resistance matrix of the main control heating zone and the secondary auxiliary heating zone based on the temperature response data of the main zone and the temperature response data of the secondary zone, which can improve the reliability of subsequent thermodynamic analysis.

[0032] Specifically, the step of analyzing the coupling thermal resistance matrix of the main control heating zone and the secondary auxiliary heating zone based on the main zone temperature response data and the secondary zone temperature response data includes: Based on the temperature response data of the main zone and the temperature response data of the secondary zone, the equivalent coupling thermal resistance of the main control heating zone and the secondary auxiliary heating zone is calculated. The equivalent thermal coupling coefficient between the main control heating zone and the secondary auxiliary heating zone is calculated using the equivalent coupling thermal resistance. Based on the equivalent thermal coupling coefficient, the coupling thermal resistance matrix of the main control heating zone and the secondary auxiliary heating zone is established.

[0033] Wherein, the equivalent coupling thermal resistance refers to the total resistance when heat flows between two independent heating zones, the equivalent thermal coupling coefficient refers to the strength and efficiency of thermal interaction between two independent heating zones, and the coupling thermal resistance matrix refers to the thermal interaction topology that describes the coupling relationship between all possible zone pairs in a multi-zone heating system.

[0034] Optionally, the calculation of the equivalent coupling thermal resistance of the main control heating zone and the secondary auxiliary heating zone based on the main zone temperature response data and the secondary zone temperature response data can be achieved by the steady-state power-temperature difference method.

[0035] Optionally, the equivalent thermal coupling coefficient between the main heating zone and the secondary auxiliary heating zone, calculated using the equivalent coupling thermal resistance, can be obtained through reciprocal calculation.

[0036] The present invention establishes a thermodynamic state-space model of the silicon-ene heating chip, realizing the quantification and decoupling of the complex thermodynamic behavior inside the silicon-ene chip.

[0037] In detail, establishing the thermodynamic state-space model of the siloxane heating chip includes: Define the thermodynamic parameters of the siloxane heating chip, wherein the thermodynamic parameters include state variables, input variables, and output variables; Construct the thermal capacity matrix of the siloxane heating chip; Based on the coupling thermal resistance matrix, the thermodynamic parameters, and the thermal capacity matrix of the silene heating chip, the thermodynamic state space equation of the silene heating chip is established. A thermodynamic state-space model of the siloxane heating chip is established using the aforementioned thermodynamic state-space equation.

[0038] The state variables refer to the minimum number of variables that can completely describe the internal thermal dynamic energy state of the silicon-ene heating chip system. The input variables refer to the independent and controllable excitation signals applied to the silicon-ene heating chip system by an external controller to drive changes in the system state. The output variables refer to physical quantities that can be directly measured by sensors and used for feedback control or system monitoring. The thermal capacity matrix refers to a diagonal matrix whose diagonal elements represent the thermal capacity of each partition. The thermodynamic state space equation refers to a first-order matrix differential equation based on the law of conservation of energy that describes the dynamic relationship between the system state variables, input variables, and output variables. The thermodynamic state space model refers to a mathematical representation that completely describes the thermal dynamic behavior of the silicon-ene heating chip, composed of the thermodynamic state space equation and the parameter matrix defined therein.

[0039] Furthermore, establishing the thermodynamic state-space equation of the siloxane heating chip based on the coupling thermal resistance matrix, the thermodynamic parameters, and the thermal capacity matrix includes: Calculate the matrix inverse of the heat capacity matrix; Calculate the system thermal conductivity matrix of the siloxane heating chip based on the coupling thermal resistance matrix; The thermodynamic state-space equation of the siloxane heating chip is established based on the matrix inverse, the system thermal conductivity matrix, the thermodynamic parameters, and the thermal capacity matrix.

[0040] The inverse of the thermal capacity matrix refers to the new matrix obtained by inverting the thermal capacity matrix, and the system thermal conductivity matrix refers to a square matrix that comprehensively describes all heat flow paths in the silicon-ene heating chip.

[0041] Furthermore, as another embodiment of the present invention, the thermodynamic state space equation is as follows: ; in, The time derivative of the state variable in thermodynamic parameters. Represents the state variables in thermodynamic parameters. The matrix inverse of the heat capacity matrix is ​​represented. Represents the heat capacity matrix. Represents the thermal conductivity matrix of the system. This represents the input variables in thermodynamic parameters.

[0042] S3. Receive the overall heating task of the silicon-ene heating chip, and combine the overall heating task, the pre-set multi-level collaborative heating strategy library and the thermodynamic state space model to calculate the main independent temperature trajectory of the main control heating zone and the secondary independent temperature trajectory of the secondary auxiliary heating zone.

[0043] It should be explained that the overall heating task refers to the global, macroscopic temperature control requirement command issued by the upper-layer application or user for the entire working surface of the silicon-based heating chip.

[0044] This invention combines the overall heating task with a pre-set multi-level collaborative heating strategy library to calculate the independent temperature trajectory of the main zone of the main control heating zone and the independent temperature trajectory of the secondary zone of the secondary auxiliary heating zone. This ensures that the entire chip can work as a coordinated whole, thereby simultaneously meeting the high requirements of dynamic response speed and static uniformity, and realizing multi-level adaptive control.

[0045] In detail, the calculation of the independent temperature trajectory of the main zone of the main control heating zone and the independent temperature trajectory of the secondary zone of the secondary auxiliary heating zone, by combining the overall heating task, the pre-set multi-level collaborative heating strategy library, and the thermodynamic state-space model, includes: Extract the key heating parameters of the overall heating task; Based on the aforementioned key heating parameters, match the collaborative heating strategies in the multi-level collaborative heating strategy library; Based on the aforementioned key heating parameters, the independent temperature trajectory of the main zone of the main control heating zone is calculated; Based on the independent temperature trajectory of the main region and the thermodynamic state space model, analyze the open-loop analysis temperature of the secondary auxiliary heating region; By combining the open-loop analysis temperature, the synergistic heating strategy, and the key heating parameters, a sub-zone independent temperature trajectory of the secondary auxiliary heating zone is generated.

[0046] The key heating parameters refer to the set of core indicators extracted from the overall heating task, used to quantify control objectives and constraints, such as the final target temperature, the rate of change of target temperature, and spatial temperature uniformity requirements. The multi-level collaborative heating strategy library is a pre-set set of strategies containing various roles and cooperation modes. This library can automatically match the optimal strategy based on the type and requirements of the received overall heating task. The collaborative heating strategy refers to the pre-set rules in the strategy library that guide how to decompose and allocate the overall heating task to primary and secondary heating zones, such as the "primary drive-compensation" strategy: the primary zone is responsible for rapidly driving overall temperature changes, while the secondary zone is responsible for compensating for edge heat dissipation to maintain uniformity. The primary zone independent temperature trajectory refers to the time-varying temperature setpoint curve separately planned for the primary heating zone. The open-loop analysis temperature refers to the predicted temperature that each secondary auxiliary heating zone will reach, based solely on the primary zone independent temperature trajectory and the system's thermodynamic state-space model, assuming no active control of the secondary auxiliary heating zones. The secondary zone independent temperature trajectory refers to the time-varying temperature setpoint curve separately planned for each secondary auxiliary heating zone.

[0047] Optionally, the generation of the sub-zone independent temperature trajectory of the secondary auxiliary heating zone by combining the open-loop analysis temperature, the collaborative heating strategy, and the key heating parameters can be achieved by using a collaborative compensation algorithm to converge the temperatures of all zones to a consistent level.

[0048] S4. Based on the independent temperature trajectory of the main region and the independent temperature trajectory of the secondary region, calculate the partition feedforward control voltage and partition temperature deviation of the silicon-ene heating chip.

[0049] Based on the independent temperature trajectory of the main region and the independent temperature trajectory of the secondary region, this invention calculates the zone feedforward control voltage and zone temperature deviation of the silicon-ene heating chip, achieving a perfect balance between response speed and control accuracy.

[0050] In detail, the calculation of the partition feedforward control voltage and partition temperature deviation of the siloxane heating chip based on the independent temperature trajectory of the main region and the independent temperature trajectory of the secondary region includes: Calculate the temperature change rate of the main region and the temperature change rate of the secondary region for the independent temperature trajectory of the main region and the independent temperature trajectory of the secondary region; The zone feedforward thermal power of the silicon-ene heating chip is calculated by combining the independent temperature trajectory of the main region, the independent temperature trajectory of the secondary region, the temperature change rate of the main region, and the temperature change rate of the secondary region. Analyze the resistance-temperature characteristics of the siloxane heating chip; Based on the partitioned feedforward thermal power and the resistance-temperature characteristics, the partitioned feedforward control voltage of the siloxane heating chip is determined; The actual temperature of each zone of the silicon-ene heating chip is collected to analyze the temperature deviation of each zone.

[0051] Wherein, the main zone temperature change rate refers to the first derivative of the independent temperature trajectory of the main control heating zone with respect to time; the secondary zone temperature change rate refers to the first derivative of the independent temperature trajectory of the secondary auxiliary heating zone with respect to time; the partition feedforward thermal power refers to the theoretical heating power value that needs to be applied to each partition in advance to accurately track the target temperature trajectory, calculated based on the system's inverse dynamics model; the resistance-temperature characteristic refers to the functional relationship between the resistance value and temperature of each independent heating partition in the silicon ene heating chip; the partition feedforward control voltage refers to the driving voltage value finally applied to the heating element of each partition; and the partition temperature deviation refers to the difference between the planned target temperature of each partition and the temperature actually measured by the sensor.

[0052] Optionally, the temperature change rate of the main region and the temperature change rate of the sub-region, which are used to calculate the independent temperature trajectory of the main region and the independent temperature trajectory of the sub-region, can be calculated by a numerical differential algorithm.

[0053] S5. Based on the partition temperature deviation, calculate the partition feedback control voltage of the siloxane heating chip, and combine the partition feedforward control voltage and the partition feedback control voltage to generate the partition drive control signal of the siloxane heating chip to execute the multi-level temperature adaptive regulation of the siloxane heating chip.

[0054] This invention calculates the partition feedback control voltage of the siloxane heating chip based on the partition temperature deviation, combining a feedforward and PID feedback composite control strategy to ensure that the siloxane heating chip can quickly, accurately, and stably track complex multi-zone independent temperature trajectories. The partition feedback control voltage refers to the compensatory drive voltage calculated by a feedback control algorithm based on the real-time temperature deviation of each partition, used to eliminate the deviation.

[0055] Finally, this invention combines the partition feedforward control voltage and the partition feedback control voltage to generate a partition drive control signal for the siloxane heating chip, thereby executing multi-level temperature adaptive regulation of the siloxane heating chip to efficiently and accurately complete complex temperature control tasks. Specifically, the partition drive control signal refers to the actual voltage with a defined amplitude and waveform ultimately applied to each independent siloxane heating partition. More specifically, the partition drive control signal is a linear superposition of the partition feedforward control voltage and the partition feedback control voltage. The multi-level temperature adaptive regulation refers to automatically, coordinately, and precisely controlling the temperature of multiple independent heating partitions on the siloxane chip based on a global overall heating task.

[0056] First, this solution uses a stepped testing method to accurately identify the self-heating characteristics and thermal coupling coefficients between the main control area and the secondary auxiliary areas. This transforms the originally vague and empirical control problem into a clear and calculable mathematical model problem. This not only lays a solid theoretical foundation for precise control but also enables the system to proactively anticipate and compensate for heat transfer between areas, fundamentally solving the problem of temperature runaway and unevenness caused by thermal coupling. Second, this solution introduces a trajectory planning mechanism based on a multi-level collaborative heating strategy library, giving the system unprecedented task adaptability and intelligence. It can intelligently call the optimal solution from the strategy library according to the overall heating task, planning ideal and dynamic temperature trajectories for the main and secondary areas respectively. This hierarchical decision-making model of "task-strategy-trajectory" makes chip heating no longer a blind process but a planned and collaborative one. The execution process greatly enhances the system's application flexibility and intelligence. Furthermore, this solution employs a feedforward-feedback composite control architecture, achieving a perfect balance between response speed and control accuracy. Simple feedforward control relies on model accuracy and is sensitive to disturbances; while simple feedback control has inherent delays and struggles to achieve rapid tracking. This solution organically combines the two: using the partitioned feedforward control voltage calculated from the state-space model and target trajectory, it can "predict" and dominate temperature change trends, achieving millisecond-level rapid response and effectively overcoming system thermal inertia. Simultaneously, the partitioned feedback control voltage corrects temperature deviations caused by uncertainties such as model errors and environmental disturbances in real time, ensuring the final control accuracy and robustness. This dual-insurance mechanism of "active attack + passive correction" enables the system to maintain extremely high stability and reliability even under complex operating conditions. Therefore, this invention can improve the uniformity of multi-level temperature adaptive regulation in silicon-ene heating chips.

[0057] like Figure 2 The diagram shown is a functional block diagram of a multi-level temperature adaptive control system for a silicon-based heating chip according to the present invention.

[0058] The multi-level temperature adaptive control system 200 for a silene heating chip described in this invention can be installed in an electronic device. Depending on the functions implemented, the multi-level temperature adaptive control system for the silene heating chip may include a chip primary and secondary partitioning module 201, a state space model construction module 202, a temperature trajectory analysis module 203, a feedforward control voltage determination module 204, and a multi-level temperature control module 205. The module described in this invention can also be referred to as a unit, which refers to a series of computer program segments that can be executed by the processor of an electronic device and can perform a fixed function, and are stored in the memory of the electronic device.

[0059] In this embodiment of the invention, the functions of each module / unit are as follows: The chip primary and secondary partitioning module 201 is used to analyze the primary control heating area and the secondary auxiliary heating area of ​​the silicon-ene heating chip, and to collect the primary area temperature response data and the secondary area temperature response data of the primary control heating area and the secondary auxiliary heating area under the stepped test current. The state space model construction module 202 is used to analyze the coupling thermal resistance matrix of the main control heating zone and the secondary auxiliary heating zone based on the main zone temperature response data and the secondary zone temperature response data, so as to establish the thermodynamic state space model of the silicon-ene heating chip. The temperature trajectory analysis module 203 is used to receive the overall heating task of the silicon-ene heating chip, and calculate the main independent temperature trajectory of the main control heating zone and the secondary independent temperature trajectory of the secondary auxiliary heating zone by combining the overall heating task, the pre-set multi-level collaborative heating strategy library and the thermodynamic state space model. The feedforward control voltage determination module 204 is used to calculate the partition feedforward control voltage and partition temperature deviation of the silicon-ene heating chip based on the main region independent temperature trajectory and the secondary region independent temperature trajectory. The multi-level temperature control module 205 is used to calculate the partition feedback control voltage of the siloxane heating chip based on the partition temperature deviation, and generate the partition drive control signal of the siloxane heating chip by combining the partition feedforward control voltage and the partition feedback control voltage, so as to execute the multi-level temperature adaptive regulation of the siloxane heating chip.

[0060] In detail, the modules in the multi-level temperature adaptive control system 200 of the siloxane heating chip described in this embodiment of the invention employ the same methods as described above during use. Figure 1 The method used is the same as the multi-level temperature adaptive control method for the silicon-based heating chip described above, and it can produce the same technical effect, so it will not be elaborated here.

[0061] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention.

[0062] Finally, it should be noted that in the above embodiments, each embodiment can be combined with each other or independent. Deleting any one of them will not affect the technical implementation of other embodiments. The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. A multi-stage temperature self-adaptive regulation method for a silicene heating chip, characterized in that, The method comprises: analyzing the main control heating area and the secondary auxiliary heating area of the silicene heating chip, and collecting main area temperature response data and secondary area temperature response data of the main control heating area and the secondary auxiliary heating area under a stepped test current; according to the main area temperature response data and the secondary area temperature response data, analyzing a coupling thermal resistance matrix of the main control heating area and the secondary auxiliary heating area to establish a thermodynamic state space model of the silicene heating chip; receiving a total heating task of the silicene heating chip, combining the total heating task, a pre-set multi-stage cooperative heating strategy library and the thermodynamic state space model, calculating a main area independent temperature trajectory of the main control heating area and a secondary area independent temperature trajectory of the secondary auxiliary heating area; based on the main area independent temperature trajectory and the secondary area independent temperature trajectory, calculating a partition feedforward control voltage and a partition temperature deviation of the silicene heating chip; according to the partition temperature deviation, calculating a partition feedback control voltage of the silicene heating chip, combining the partition feedforward control voltage and the partition feedback control voltage, and generating a partition driving control signal of the silicene heating chip to perform multi-stage temperature self-adaptive regulation and control of the silicene heating chip.

2. The multi-stage temperature self-adaptive regulation method of silicene heating chip according to claim 1, wherein, The analysis of the main control heating area and the secondary auxiliary heating area of the silicene heating chip comprises: collecting geometric structure data, material attribute data and electrical structure data of the silicene heating chip; defining thermal nodes of the silicene heating chip according to the geometric structure data, the material attribute data and the electrical structure data; calculating self-thermal resistance, thermal capacity and coupling thermal resistance of the thermal nodes to establish a thermal network of the silicene heating chip; analyzing the main control heating area and the secondary auxiliary heating area of the silicene heating chip through the thermal network.

3. The multi-stage temperature self-adaptive regulation method of silicene heating chip according to claim 2, wherein, The calculation of the self-thermal resistance, the thermal capacity and the coupling thermal resistance of the thermal nodes comprises: analyzing heating area, substrate thickness and effective thermal penetration depth of the thermal nodes; based on the heating area and the substrate thickness, analyzing the self-thermal resistance of the thermal nodes; analyzing thermal time constant of the thermal nodes; combining the thermal time constant and the effective thermal penetration depth, calculating the thermal capacity of the thermal nodes; identifying a heating temperature rise value of a corresponding associated thermal node of the thermal node under constant heating power; based on the heating temperature rise value, calculating the coupling thermal resistance of the thermal node and the associated thermal node.

4. The multi-stage temperature self-adaptive regulation method of silicene heating chip according to claim 3, wherein, The analysis of the self-thermal resistance of the thermal nodes based on the heating area and the substrate thickness comprises: identifying node structure features and boundary conditions of the thermal nodes to define lateral thermal diffusion constant and longitudinal thermal conduction constant of the thermal nodes; based on the heating area, the substrate thickness, the lateral thermal diffusion constant and the longitudinal thermal conduction constant, calculating the self-thermal resistance of the thermal nodes by using the following formula: ； wherein, represents the self-thermal resistance of the thermal node, represents the base thermal conductivity of the thermal node, represents the heating zone area of the thermal node, represents the lateral thermal spreading constant of the thermal node, represents the longitudinal thermal conduction constant of the thermal node, represents the base thickness of the thermal node.

5. The multi-stage temperature self-adaptive regulation method of silicene heating chip according to claim 1, wherein, The analysis of the coupling thermal resistance matrix of the main control heating area and the secondary auxiliary heating area according to the main area temperature response data and the secondary area temperature response data comprises: calculating equivalent coupling thermal resistance of the main control heating area and the secondary auxiliary heating area according to the main area temperature response data and the secondary area temperature response data; An equivalent thermal coupling coefficient of the main heating area and the secondary auxiliary heating area is calculated through the equivalent coupling thermal resistance; A coupling thermal resistance matrix of the main heating area and the secondary auxiliary heating area is established based on the equivalent thermal coupling coefficient.

6. The multi-stage temperature self-adaptive regulation method of silicene heating chip according to claim 1, wherein, The establishing of the thermodynamic state space model of the siliconene heating chip comprises: Defining thermodynamic parameters of the siliconene heating chip, wherein the thermodynamic parameters comprise state variables, input variables and output variables; Constructing a heat capacity matrix of the siliconene heating chip; Establishing a thermodynamic state space equation of the siliconene heating chip based on the coupling thermal resistance matrix of the siliconene heating chip, the thermodynamic parameters and the heat capacity matrix; The thermodynamic state space model of the siliconene heating chip is established through the thermodynamic state space equation.

7. The multi-stage temperature self-adaptive regulation method of silicene heating chip according to claim 6, wherein, The establishing of the thermodynamic state space equation of the siliconene heating chip based on the coupling thermal resistance matrix of the siliconene heating chip, the thermodynamic parameters and the heat capacity matrix comprises: Calculating a matrix inverse of the heat capacity matrix; According to the coupling thermal resistance matrix, a system thermal conductance matrix of the siliconene heating chip is calculated; According to the matrix inverse, the system thermal conductance matrix, the thermodynamic parameters and the heat capacity matrix, a thermodynamic state space equation of the siliconene heating chip is established by using the following formula: ； wherein denotes the time derivative of a state variable in the thermodynamic parameters, denotes a state variable in the thermodynamic parameters, denotes the matrix inverse of the heat capacity matrix, denotes the heat capacity matrix, denotes the system heat conductance matrix, denotes an input variable in the thermodynamic parameters.

8. The multi-stage temperature self-adaptive regulation method of silicene heating chip of claim 1, wherein, The calculating of the main area independent temperature trajectory of the main heating area and the secondary area independent temperature trajectory of the secondary auxiliary heating area based on the overall heating task, the preset multi-stage collaborative heating strategy library and the thermodynamic state space model comprises: Extracting heating key parameters of the overall heating task; Based on the heating key parameters, a collaborative heating strategy in the multi-stage collaborative heating strategy library is matched; Based on the heating key parameters, a main area independent temperature trajectory of the main heating area is calculated; According to the main area independent temperature trajectory and the thermodynamic state space model, an open-loop analysis temperature of the secondary auxiliary heating area is analyzed; Combined with the open-loop analysis temperature, the collaborative heating strategy and the heating key parameters, a secondary area independent temperature trajectory of the secondary auxiliary heating area is generated.

9. The multi-stage temperature self-adaptive regulation method of silicene heating chip of claim 1, wherein, The calculating of the partition feedforward control voltage and the partition temperature deviation of the siliconene heating chip based on the main area independent temperature trajectory and the secondary area independent temperature trajectory comprises: Calculating a main area temperature change rate and a secondary area temperature change rate of the main area independent temperature trajectory and the secondary area independent temperature trajectory; Combined with the main area independent temperature trajectory, the secondary area independent temperature trajectory, the main area temperature change rate and the secondary area temperature change rate, a partition feedforward thermal power of the siliconene heating chip is calculated; Analyzing the resistance-temperature characteristics of the siliconene heating chip; Based on the partition feedforward thermal power and the resistance-temperature characteristics, a partition feedforward control voltage of the siliconene heating chip is determined; The partition actual temperature of the siliconene heating chip is collected to analyze the partition temperature deviation of the siliconene heating chip.

10. A multi-stage temperature self-adaptive regulation system of a silicene heating chip, characterized in that, The system comprises: The chip primary and secondary partition module is used for analyzing the primary heating area and the secondary auxiliary heating area of the silicon wafer heating chip, and collecting the primary area temperature response data and the secondary area temperature response data of the primary heating area and the secondary auxiliary heating area under the stepped test current; The state space model construction module is used for analyzing the coupling thermal resistance matrix of the primary heating area and the secondary auxiliary heating area according to the primary area temperature response data and the secondary area temperature response data, so as to establish the thermodynamic state space model of the silicon wafer heating chip; The temperature trajectory analysis module is used for receiving the overall heating task of the silicon wafer heating chip, combining the overall heating task, the preset multi-stage collaborative heating strategy library and the thermodynamic state space model, calculating the primary area independent temperature trajectory of the primary heating area and the secondary area independent temperature trajectory of the secondary auxiliary heating area; The feedforward control voltage determination module is used for calculating the partition feedforward control voltage and the partition temperature deviation of the silicon wafer heating chip based on the primary area independent temperature trajectory and the secondary area independent temperature trajectory; the multi-stage temperature control module is used for calculating the partition feedback control voltage of the silicon wafer heating chip according to the partition temperature deviation, combining the partition feedforward control voltage and the partition feedback control voltage, generating the partition driving control signal of the silicon wafer heating chip, so as to perform the multi-stage temperature self-adaptive regulation and control of the silicon wafer heating chip.

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