Micro-fluidic driving circuit and driving method thereof, and micro-fluidic device

Abstract

The application provides a micro-fluid driving circuit and a driving method thereof and a micro-fluid device. In the micro-fluid driving circuit, a first pass end of a first reset unit is connected to a low potential voltage source, a second pass end of the first reset unit, an output end of a charging unit and a control end of a driving unit are connected to a first connection node, a control end of the first reset unit is connected to a second scan signal line, the second scan signal line is a scan signal line of a previous row of a current row, a first pass end of a second reset unit is connected to the low potential voltage source, a second pass end of the second reset unit is used for connecting a driving electrode, and a control end of the second reset unit is connected to the first connection node. The second reset unit is used for being turned on in a state that the first connection node is at a low potential. Specifically, through the above setting, the control end of the driving unit and the driving circuit are reset when the micro-fluid driving circuit of the previous row works, and then the accuracy and stability of the operation of the driving electrode are improved.

Description

Technical Field

[0001] This application relates to the field of microfluidics, and in particular to a microfluidic driving circuit and driving method thereof, and a microfluidic device. Background Technology

[0002] Microfluidic devices are devices that move droplets by relying on changes in the wetting effect of liquids. They can perform state transitions such as droplet movement, fusion, and splitting to analyze the optical, chemical, and physical properties of different components or fused components.

[0003] In the construction of a microfluidic platform, the droplet control stage is the core component. Conventional microfluidic devices manipulate fluids by designing different types of channels and micropump valve structures. This method is complex and cumbersome to manufacture, and cannot achieve precise and stable control of droplets. The failure rate of droplet control is high and the control efficiency is low.

[0004] A novel microfluidic technology relies on tiny drive circuit units inside the stage to achieve electrical conversion of the drive electrode by a single unit, thereby changing the wetting behavior of the droplet to achieve the purpose of moving the droplet. Therefore, the design of the drive circuit unit needs to meet the requirements of accuracy, fast response and stability of the electrical properties of the drive electrode in order to achieve precise and stable control of the droplet.

[0005] However, improving the accuracy and stability of the operation of the driving electrode is an urgent problem to be solved. Summary of the Invention

[0006] To address the aforementioned issues, this application provides a microfluidic driving circuit and its driving method, as well as a microfluidic device, which can improve the accuracy and stability of the operation of the driving electrode.

[0007] To address the aforementioned problems, the first technical solution provided in this application is: a microfluidic driving circuit for driving driving electrodes in a microfluidic device, comprising:

[0008] A charging unit, wherein a first path terminal of the charging unit is connected to a data line, and a control terminal of the charging unit is connected to a first scan signal line, wherein the data line is used to output data voltage, and the first scan signal line is used to control the charging unit to be turned on or off.

[0009] A driving unit, wherein a first terminal of the driving unit is connected to a high-potential voltage source, and a second terminal of the driving unit is used to connect to the driving electrode;

[0010] The first reset unit has a first path terminal connected to a low potential voltage source, a second path terminal of the first reset unit, the output terminal of the charging unit and the control terminal of the driving unit connected to a first connection node, and the control terminal of the first reset unit connected to a second scan signal line, wherein the second scan signal line is used to control the first reset unit to be turned on or off, and the second scan signal line is the scan signal line of the previous row of the current row.

[0011] The second reset unit has a first path terminal connected to the low-potential voltage source, a second path terminal connected to the driving electrode, and a control terminal connected to the first connection node; wherein the second reset unit is used to conduct when the first connection node is at a low potential.

[0012] In one embodiment, the charging unit includes:

[0013] A charging subunit, wherein the first path terminal of the charging subunit is connected to the data line, and the control terminal of the charging subunit is connected to the first scan signal line;

[0014] An energy storage subunit, wherein a first end of the energy storage subunit is connected to a second path end of the charging subunit, and a second end of the energy storage subunit is connected to the first connection node;

[0015] The microfluidic driving circuit also includes:

[0016] A first coupling unit, wherein a first end of the first coupling unit is connected to the first connection node, and a second end of the first coupling unit is used to connect to the driving electrode.

[0017] In one embodiment, the charging unit includes:

[0018] A charging subunit, wherein the first path terminal of the charging subunit is connected to the data line, and the control terminal of the charging subunit is connected to the first scan signal line;

[0019] An energy storage subunit, wherein a first end of the energy storage subunit is connected to a second path end of the charging subunit, and a second end of the energy storage subunit is connected to the first connection node;

[0020] The microfluidic driving circuit also includes:

[0021] A potential maintenance unit is provided, wherein a first path terminal of the potential maintenance unit is connected to the high-potential voltage source, a second path terminal of the potential maintenance unit is connected between the second path terminal of the charging subunit and the control terminal of the driving unit, and the control terminal of the potential maintenance unit is connected to a third scan signal line; wherein the third scan signal line is used to control the potential maintenance unit to conduct when the driving electrode is written with a high potential.

[0022] In one embodiment, the charging unit includes:

[0023] A charging subunit, wherein the first path terminal of the charging subunit is connected to the data line, and the control terminal of the charging subunit is connected to the first scan signal line;

[0024] An energy storage subunit, wherein a first end of the energy storage subunit is connected to a second path end of the charging subunit, and a second end of the energy storage subunit is connected to the first connection node;

[0025] The microfluidic driving circuit also includes:

[0026] A potential maintenance unit is provided, wherein a first path terminal of the potential maintenance unit is connected to the high-potential voltage source, a second path terminal of the potential maintenance unit is connected between the second path terminal of the charging subunit and the first terminal of the energy storage subunit, and a control terminal of the potential maintenance unit is connected to the first connection node; wherein the potential maintenance unit is turned on based on the first connection node being in a high-potential state.

[0027] A first coupling unit, wherein a first end of the first coupling unit is connected to the first connection node, and a second end of the first coupling unit is used to connect to the driving electrode.

[0028] In one embodiment, the microfluidic driving circuit further includes:

[0029] The second coupling unit has a first end connected to the data line and a second end connected to the control terminal of the charging subunit.

[0030] The data voltage output by the data line is located before the conduction signal output by the first scan signal line.

[0031] In one embodiment, the microfluidic driving circuit further includes:

[0032] The third reset unit has a first path terminal connected to the low potential voltage source, a second path terminal connected to the driving electrode, and a control terminal connected to the second scan signal line, wherein the second scan signal line is used to control the third reset unit to be turned on or off.

[0033] In one embodiment, the first reset unit includes a third transistor group, a first path terminal of the third transistor group is connected to a low potential voltage source, a second path terminal of the third transistor group, the output terminal of the charging unit and the control terminal of the driving unit are connected to the first connection node, and the control terminal of the third transistor group is connected to the second scan signal line;

[0034] The second reset unit includes a fourth transistor group, the first path terminal of the fourth transistor group is connected to the low potential voltage source, the second path terminal of the fourth transistor group is used to connect to the driving electrode, and the control terminal of the fourth transistor group is connected to the first connection node.

[0035] In one embodiment, the third transistor group comprises N third transistors connected in series, where N is a positive integer greater than or equal to 1; and / or

[0036] The fourth transistor group comprises M fourth transistors connected in series, where M is a positive integer greater than or equal to 1.

[0037] To address the aforementioned problems, the second technical solution provided in this application is: to provide a microfluidic device, comprising:

[0038] Drive electrode;

[0039] A microfluidic driving circuit, wherein the microfluidic driving circuit includes any of the microfluidic driving circuits described above.

[0040] To address the aforementioned problems, the third technical solution provided in this application is: a driving method for a microfluidic driving circuit, wherein the microfluidic driving circuit includes the microfluidic driving circuit described in any of the above claims, and the driving method includes:

[0041] During the reset phase, the second scan signal line is used to control the first reset unit to be turned on, so that the low potential voltage output by the low potential voltage source is output to the first connection node through the first reset unit to reset the control terminal of the drive unit, and the second reset unit is controlled to be turned on, so that the low potential voltage output by the low potential voltage source is reset to the drive electrode through the second reset unit.

[0042] During the data-driven phase, the charging unit is turned on using the first scan signal line to charge the first connection node with the data voltage output from the data line. When the driving unit is in the state of being turned on based on the potential of the first connection node, the high-potential voltage source drives the driving electrode to work through the turned-on driving unit.

[0043] The beneficial effect of this application is that, unlike the prior art, the microfluidic driving circuit provided in this application includes a charging unit, a driving unit, a first reset unit, and a second reset unit. The first reset unit's first path terminal is connected to a low-potential voltage source; the second path terminal of the first reset unit, the output terminal of the charging unit, and the control terminal of the driving unit are connected to a first connection node; the control terminal of the first reset unit is connected to a second scan signal line, which is used to control the first reset unit to be on or off, and the second scan signal line is the scan signal line of the row preceding the current row. The second reset unit's first path terminal is connected to a low-potential voltage source; the second path terminal of the second reset unit is used to connect to a driving electrode; the control terminal of the second reset unit is connected to the first connection node; the second reset unit is used to be on when the first connection node is at a low potential. Specifically, by connecting the control terminal of the first reset unit to the second scan signal line, and the second scan signal line being the scan signal line of the previous row of the current row, the first reset unit of the current row can be turned on when the microfluidic drive circuit of the previous row is working. This allows the low-potential voltage source to pull down the potential of the first connection node through the turned-on first reset unit, thereby resetting the control terminal of the drive unit. Furthermore, the second reset unit can be turned on when the first connection node is at a low potential, allowing the low-potential voltage source to also reset the drive electrode through the turned-on second reset unit, thus improving the accuracy and stability of the operation of the drive electrode. Attached Figure Description

[0044] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0045] Figure 1 A schematic diagram of the microfluidic drive circuit provided in the first embodiment of this application;

[0046] Figure 2 A schematic diagram of the circuit structure of the microfluidic driving circuit provided in the first embodiment of this application;

[0047] Figure 3 A schematic diagram of the microfluidic drive circuit provided in the second embodiment of this application;

[0048] Figure 4 A schematic diagram of the circuit structure of the microfluidic driving circuit provided in the second embodiment of this application;

[0049] Figure 5 A schematic diagram of the microfluidic drive circuit provided in the third embodiment of this application;

[0050] Figure 6 A schematic diagram of a microfluidic drive circuit provided in the third embodiment of this application;

[0051] Figure 7 A schematic diagram of another circuit structure of the microfluidic driving circuit provided in the third embodiment of this application;

[0052] Figure 8 A schematic diagram of the microfluidic drive circuit provided in the fourth embodiment of this application;

[0053] Figure 9 A schematic diagram of the circuit structure of the microfluidic driving circuit provided in the fourth embodiment of this application;

[0054] Figure 10 A schematic diagram of the microfluidic drive circuit provided in the fifth embodiment of this application;

[0055] Figure 11 A schematic diagram of the circuit structure of the microfluidic driving circuit provided in the fifth embodiment of this application;

[0056] Figure 12 A schematic flowchart illustrating the driving method of the microfluidic driving circuit provided in the embodiments of this application;

[0057] Figure 13 Timing diagram of the microfluidic driving circuit and driving electrode provided in the embodiments of this application;

[0058] Figure 14 This is a schematic diagram of the microfluidic device provided in the embodiments of this application;

[0059] Figure 15 This is a schematic diagram of the microfluidic device provided in the embodiments of this application.

[0060] Label Explanation:

[0061] First embodiment:

[0062] Charging unit-11; Charging sub-unit-111; Energy storage sub-unit-112; Drive unit-12; First reset unit-13; Second reset unit-14; Third reset unit-15;

[0063] Second embodiment:

[0064] Charging unit-21; Charging subunit-211; Energy storage subunit-212; Drive unit-22; First reset unit-23; Second reset unit-24; First coupling unit-25; Third reset unit-15;

[0065] Third embodiment:

[0066] Charging unit-31; Charging sub-unit-311; Energy storage sub-unit-312; Drive unit-32; First reset unit-33; Second reset unit-34; Potential maintenance unit-35; Third reset unit-15;

[0067] Fourth embodiment:

[0068] Charging unit-41; Charging sub-unit-411; Energy storage sub-unit-412; Driving unit-42; First reset unit-43; Second reset unit-44; Potential maintenance unit-45; First coupling unit-46; Third reset unit-15;

[0069] Fifth embodiment:

[0070] Charging unit-51; Charging subunit-511; Energy storage subunit-512; Drive unit-52; First reset unit-53; Second reset unit-54; Second coupling unit-55; Third reset unit-15;

[0071] Microfluidic device-300; driving electrode-200; microfluidic driving circuit-100; first substrate-310; first substrate-3101; common electrode-3102; first hydrophobic layer-3103; second substrate-320; second substrate-3201; driving circuit layer-3202; insulating layer-3204; second hydrophobic layer-3205; channel-330;

[0072] Data line - Data; First scan signal line - Scan1; Second scan signal line - Scan2; Third scan signal line - Scan3; High potential voltage source - VGH; Low potential voltage source - VSS; First connection node - A; Second connection node - B; Third connection node - C; First transistor - T1; Second transistor - T2; Third transistor - T3; Fourth transistor - T4; Fifth transistor - T5; Sixth transistor - T6; First capacitor - C1; Second capacitor - C2; Third capacitor - C3. Detailed Implementation

[0073] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0074] The terms "first," "second," "third," etc., used in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first," "second," "third," etc., may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movement of components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0075] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0076] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0077] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0078] See Figure 1 and Figure 2 , Figure 1 A schematic diagram of the microfluidic drive circuit provided in the first embodiment of this application; Figure 2 This is a schematic diagram of the circuit structure of the microfluidic driving circuit provided in the first embodiment of this application.

[0079] In the first embodiment of this application, a microfluidic driving circuit is provided. The microfluidic driving circuit is used to drive the driving electrode in the microfluidic device. Specifically, the microfluidic driving circuit includes a charging unit 11, a driving unit 12, a first reset unit 13, and a second reset unit 14.

[0080] The charging unit 11 includes a first path terminal, a second path terminal, and a control terminal. The first path terminal of the charging unit 11 is connected to the data line Data, which is used to output a data voltage, which can be a high voltage or a low voltage. The second path terminal (or output terminal) of the charging unit 11 is connected to the driving unit 12. The control terminal of the charging unit 11 is connected to the first scan signal line Scan1, which is used to control the charging unit 11 to be turned on or off, and outputs the data voltage on the data line Data when the charging unit 11 is turned on.

[0081] Optionally, the charging unit 11 may include a charging subunit 111 and an energy storage subunit 112.

[0082] The charging subunit 111 includes a first path terminal, a second path terminal, and a control terminal. The first path terminal of the charging subunit 111 is connected to the data line Data as the first path terminal of the charging unit 111. The second path terminal of the charging subunit 111 is connected to the energy storage subunit 112. The control terminal of the charging subunit 111 is connected to the first scan signal line Scan1 as the control terminal of the charging unit 111.

[0083] Optionally, the charging sub-unit 111 includes a first transistor T1. The first transistor T1 can be a P-type transistor or an N-type transistor; in this embodiment, an N-type transistor is used as an example.

[0084] The energy storage sub-unit 112 includes a first end and a second end. The first end of the energy storage sub-unit 112 is connected to the second access end of the charging sub-unit 111, and the second end of the energy storage sub-unit 112 serves as the second access end of the charging unit 11.

[0085] Optionally, the energy storage sub-unit 112 includes a first capacitor C1.

[0086] The driving unit 12 includes a first path terminal, a second path terminal, and a control terminal. The first path terminal of the driving unit 12 is connected to a high-potential voltage source VGH, and the second path terminal of the driving unit 12 is used to connect to a driving electrode. The control terminal of the driving unit 12 is connected to the second path terminal of the charging unit 11. The driving unit 12 is used to write the high-potential voltage on the high-potential voltage source VGH into the driving electrode in the on state to control the driving electrode to work.

[0087] Optionally, the driving unit 12 includes a second transistor T2. The second transistor T2 can be a P-type transistor or an N-type transistor; this embodiment uses an N-type transistor as an example.

[0088] The first reset unit 13 includes a first path terminal, a second path terminal, and a control terminal. The first path terminal of the first reset unit 13 is connected to a low-potential voltage source VSS. The second path terminal of the first reset unit 13, the second path terminal of the charging unit 11, and the control terminal of the driving unit 12 are connected to the first connection node A. The control terminal of the first reset unit 13 is connected to the second scan signal line Scan2. The second scan signal line Scan2 is used to control the first reset unit 13 to be turned on or off, and outputs a low-potential voltage when the first reset unit 13 is turned on. In this embodiment, the second scan signal line Scan2 is the scan signal line of the row above the current row.

[0089] Optionally, the first reset unit 13 includes a third transistor group. The first path terminal of the third transistor group is connected to a low potential voltage source VSS. The second path terminal of the third transistor group, the output terminal of the charging unit 11, and the control terminal of the driving unit 12 are connected to the first connection node A. The control terminal of the third transistor group is connected to the second scan signal line Scan2.

[0090] Optionally, the third transistor group includes N third transistors T3 connected in series, wherein the third transistors T3 can be P-type transistors or N-type transistors. This embodiment uses an N-type transistor as an example. N is a positive integer greater than or equal to 1. For example, the third transistor group may include one third transistor T3, or two third transistors T3 connected in series; or four third transistors T3 connected in series, without limitation.

[0091] Specifically, when the number of N is greater than 1, the leakage current of the first connection node A through the first reset unit 13 can be significantly reduced.

[0092] The second reset unit 14 includes a first path terminal, a second path terminal, and a control terminal. The first path terminal of the second reset unit 14 is connected to a low-potential voltage source VSS. The second path terminal of the second reset unit 14 and the second path terminal of the driving unit 12 have a second connection node B, which is also used to connect a driving electrode. The control terminal of the second reset unit 14 is connected to the first connection node A. The second reset unit 14 is used to turn on when the first connection node A is at a low potential, and outputs a low-potential voltage when the second reset unit 14 is turned on.

[0093] Optionally, the second reset unit 14 includes a fourth transistor group, the first path terminal of the fourth transistor group is connected to a low potential voltage source VSS, the second path terminal of the fourth transistor group is connected to a second connection node B, and the control terminal of the fourth transistor group is connected to a first connection node A.

[0094] Optionally, the fourth transistor group includes M fourth transistors T4 connected in series. The fourth transistor T4 can be a P-type transistor or an N-type transistor; this embodiment uses a P-type transistor as an example. M is a positive integer greater than or equal to 1. For example, the fourth transistor group includes one fourth transistor T4, or two fourth transistors T4 connected in series; or four fourth transistors T4 connected in series, without limitation.

[0095] Specifically, when the number of M is greater than 1, the leakage current of the second connection node B through the second reset unit 14 can be significantly reduced.

[0096] Specifically, the microfluidic driving circuit provided in this application embodiment connects the control terminal of the first reset unit 13 to the second scan signal line Scan2, and the second scan signal line Scan2 is the scan signal line of the previous row of the current row. Thus, when the microfluidic driving circuit of the previous row is working, the signal output on the second scan signal line Scan2 can activate the first reset unit 13 of the current row. This allows the low-potential voltage source VSS to pull down the potential of the first connection node A through the activated first reset unit 13, thereby resetting the control terminal of the driving unit 12. Furthermore, the first connection node A, while at a low potential, can also... The second reset unit 14 is turned on, which in turn enables the low potential voltage source VSS to reset the driving electrode through the second reset unit 14. Therefore, before the microfluidic driving circuit of this row works, the control terminal and driving electrode of the driving unit 12 of this row can be reset, clearing the residual voltage on the control terminal and driving electrode of the driving unit 12 of this row. This avoids the problem that the voltage on the control terminal and driving electrode of the driving unit 12 in the current frame is inconsistent with the voltage in the previous frame, thereby improving the accuracy and stability of the operation of the driving electrode and enabling the microfluidic driving circuit to have a faster response speed.

[0097] See Figure 3 and Figure 4 , Figure 3 A schematic diagram of the microfluidic drive circuit provided in the second embodiment of this application; Figure 4 This is a schematic diagram of the circuit structure of the microfluidic driving circuit provided in the second embodiment of this application.

[0098] In the second embodiment of this application, the microfluidic driving circuit includes a charging unit 21, a driving unit 22, a first reset unit 23, and a second reset unit 24. The charging unit 21, driving unit 22, first reset unit 23, and second reset unit 24 in the second embodiment of this application have the same structure and connection relationship as the charging unit 11, driving unit 12, first reset unit 13, and second reset unit 14 in the first embodiment, and will not be described in detail here. The difference is that in the second embodiment of this application, the microfluidic driving circuit also includes a first coupling unit 25.

[0099] The first coupling unit 25 includes a first end and a second end. The first end of the first coupling unit 25 is connected to the first connection node A, and the second end of the first coupling unit 25 is connected to the second connection node B, thereby being used to connect the driving electrode.

[0100] Optionally, the first coupling unit 25 includes a second capacitor C2.

[0101] Specifically, when the driving electrode needs to be written with a high potential, the data line Data outputs a high-potential data voltage. The first scan signal line Scan1 controls the charging sub-unit 211 in the charging unit 21 to conduct, and the energy storage sub-unit 212 in the charging unit 21 charges. The potential of the first connection node A rises, thereby controlling the conduction of the driving unit 22. The high-potential voltage source VGH writes the high voltage to the driving electrode through the conducting driving unit 22. At the same time, the potential of the first connection node A is also coupled to the second connection node B through the first coupling unit 25, thereby improving the rise speed of the potential of the driving electrode and enabling the microfluidic driving circuit to have a faster response speed. Meanwhile, due to the blocking effect of the energy storage sub-unit 212 and the fact that the first reset unit 23 is in the off state, the voltage drop of the first connection node A can be delayed. When the first scan signal line Scan1 controls the charging sub-unit 211 to turn off, due to the presence of the first coupling unit 25, the driving unit 22 is still in the conducting state, and the high-potential voltage output by the high-potential voltage source VGH can still be delivered to the driving electrode through the driving unit 22.

[0102] When the driving electrode needs to be written to a low potential, the data line Data outputs a low potential data voltage. The first scan signal line Scan1 controls the charging sub-unit 211 to turn on, the voltage of the first connection node A is pulled down to a low potential, the driving unit 22 is turned off, and the second reset unit 24 is turned on based on the low potential of the first connection node A. The low potential voltage source VSS inputs the low potential voltage to the second connection node B through the turned-on second reset unit 24, that is, writes to the driving electrode. Since the low potential voltage source VSS is a DC voltage source, it can effectively maintain the low voltage of the second connection node B and prevent it from drifting.

[0103] See Figure 5 and Figure 6 , Figure 5 A schematic diagram of the microfluidic drive circuit provided in the third embodiment of this application; Figure 6 A schematic diagram of a microfluidic drive circuit provided in the third embodiment of this application; Figure 7 This is a schematic diagram of another circuit structure of the microfluidic driving circuit provided in the third embodiment of this application.

[0104] In the third embodiment of this application, the microfluidic driving circuit includes a charging unit 31, a driving unit 32, a first reset unit 33, and a second reset unit 34. The charging unit 31, driving unit 32, first reset unit 33, and second reset unit 34 in the third embodiment of this application have the same structure and connection relationship as the charging unit 11, driving unit 12, first reset unit 13, and second reset unit 14 in the first embodiment, and will not be described in detail here. The difference lies in that, in the third embodiment of this application, the microfluidic driving circuit further includes a potential maintenance unit 35.

[0105] The potential maintenance unit 35 includes a first path terminal, a second path terminal, and a control terminal. The first path terminal of the potential maintenance unit 35 is connected to a high-potential voltage source VGH. The second path terminal of the potential maintenance unit 35 is connected between the second path terminal of the charging sub-unit 311 in the charging unit 31 and the first connection node A to form a third connection node C. The control terminal of the potential maintenance unit 35 is connected to a third scan signal line Scan3. The third scan signal line Scan3 is used to control the potential maintenance unit 35 to conduct when the driving electrode is written to a high potential state.

[0106] Optionally, the second path terminal of the potential maintenance unit 35 is connected between the charging sub-unit 311 and the energy storage sub-unit 312 (e.g., Figure 6 (as shown); or, the second path terminal of the potential maintenance unit 35 is connected between the energy storage sub-unit 312 and the first connection node A (as shown). Figure 7 (As shown); no restrictions are imposed here.

[0107] Optionally, the potential maintenance unit 35 includes a fifth transistor T5. The fifth transistor T5 can be a P-type transistor or an N-type transistor; this embodiment uses an N-type transistor as an example.

[0108] Specifically, when the driving electrode needs to be written with a high potential, the data line Data outputs a high-potential data voltage. The first scan signal line Scan1 controls the charging sub-unit 311 to conduct, the energy storage sub-unit 312 to charge, and the potential of the first connection node A rises, thereby controlling the conduction of the driving unit 32. The high-potential voltage source VGH writes the high voltage to the driving electrode through the conducting driving unit 32. At the same time, due to the blocking effect of the energy storage sub-unit 312 and the fact that the first reset unit 33 is in the off state, the voltage drop of the first connection node A can be delayed. When the first scan signal line Scan1 controls the charging sub-unit 311 to turn off, the third scan signal line Scan3 controls the potential maintenance unit 35 to conduct, inputting the high-potential voltage output by the high-potential voltage source VGH into the third connection node C. In this way, the voltage of the third connection node C is maintained at a high potential, the voltage drop of the first connection node A is basically non-existent, and the driving unit 32 is still in the conducting state. The high-potential voltage output by the high-potential voltage source VGH can still be delivered to the driving electrode through the driving unit 32.

[0109] When the driving electrode needs to be written to a low potential, the third scan signal line Scan3 controls the potential maintenance unit 35 to be cut off, the data line Data outputs a low potential data voltage, the first scan signal line Scan1 controls the charging sub-unit 311 to be turned on, the voltage of the first connection node A is pulled down to a low potential, the driving unit 32 is cut off, and the second reset unit 34 is turned on based on the low potential of the first connection node A. The low potential voltage source VSS inputs the low potential voltage to the second connection node B through the turned-on second reset unit 34, that is, writes to the driving electrode. Since the low potential voltage source VSS is a DC voltage source, it can effectively maintain the low voltage of the second connection node B and prevent it from drifting.

[0110] in, Figure 7 In the microfluidic driving circuit shown, the high-potential voltage output by the high-potential voltage source VGH can directly charge point A through the conducting potential maintenance unit 35, without needing to go through... Figure 6 The energy storage sub-unit 312 in the middle has a better effect on limiting the voltage drop of the first connection node A.

[0111] See Figure 8 and Figure 9 , Figure 8 A schematic diagram of the microfluidic drive circuit provided in the fourth embodiment of this application; Figure 9 This is a schematic diagram of the circuit structure of the microfluidic driving circuit provided in the fourth embodiment of this application.

[0112] In the fourth embodiment of this application, the microfluidic driving circuit includes a charging unit 41, a driving unit 42, a first reset unit 43, and a second reset unit 44. The charging unit 41, driving unit 42, first reset unit 43, and second reset unit 44 in the fourth embodiment of this application have the same structure and connection relationship as the charging unit 11, driving unit 12, first reset unit 13, and second reset unit 14 in the first embodiment, and will not be described in detail here. The difference lies in that, in the fourth embodiment of this application, the microfluidic driving circuit further includes a potential maintenance unit 45 and a first coupling unit 46.

[0113] Optionally, the structure and connection method of the potential maintenance unit 45 can be the same as the structure and connection method of the potential maintenance unit 35 in the third embodiment, and will not be described in detail here.

[0114] Alternatively, the control terminal of the potential maintenance unit 45 can be connected to the first connection node A; wherein, the potential maintenance unit 45 is turned on based on the first connection node A being at a high potential. This can reduce the number of scan lines and wiring, simplifying the manufacturing process.

[0115] The structure and connection method of the first coupling unit 46 can be the same as the structure and connection method of the first coupling unit 25 in the second embodiment, and will not be described in detail here.

[0116] Specifically, when the driving electrode needs to be written with a high potential, the data line Data outputs a high-potential data voltage, the first scan signal line Scan1 controls the charging sub-unit 411 to turn on, the energy storage sub-unit 412 to charge, the potential of the first connection node A rises, and then controls the driving unit 42 and the potential maintenance unit 45 to turn on. The high-potential voltage source VGH writes the high voltage to the driving electrode through the turned-on driving unit 42. At the same time, the potential of the first connection node A is also coupled to the second connection node B through the first coupling unit 25, thereby improving the rise speed of the potential of the driving electrode and enabling the microfluidic driving circuit to have a faster response speed. Furthermore, the conducting potential maintenance unit 45 inputs the high potential voltage output from the high potential voltage source VGH into the third connection node C, thus maintaining the voltage of the third connection node C at a high potential. The voltage drop of the first connection node A is essentially eliminated. When the first scan signal line Scan1 controls the charging sub-unit 411 to turn off, the driving unit 42 and the potential maintenance unit 45 remain in the conducting state, and the high potential voltage output from the high potential voltage source VGH can still be delivered to the driving electrode through the driving unit 42.

[0117] When the driving electrode needs to be written to a low potential, the third scan signal line Scan3 controls the potential maintenance unit 45 to be cut off, the data line Data outputs a low potential data voltage, the first scan signal line Scan1 controls the charging sub-unit 411 to be turned on, the voltage of the first connection node A is pulled down to a low potential, the driving unit 42 is cut off, and the second reset unit 44 is turned on based on the low potential of the first connection node A. The low potential voltage source VSS inputs the low potential voltage to the second connection node B through the turned-on second reset unit 44, that is, writes to the driving electrode. Since the low potential voltage source VSS is a DC voltage source, it can effectively maintain the low voltage of the second connection node B and prevent it from drifting.

[0118] See Figure 10 and Figure 11 , Figure 10 A schematic diagram of the microfluidic drive circuit provided in the fifth embodiment of this application; Figure 11 This is a schematic diagram of the circuit structure of the microfluidic driving circuit provided in the fifth embodiment of this application.

[0119] In the fifth embodiment of this application, the microfluidic driving circuit includes a charging unit 51, a driving unit 52, a first reset unit 53, and a second reset unit 54. The charging unit 51, driving unit 52, first reset unit 53, and second reset unit 54 in the second embodiment of this application have the same structure and connection relationship as the charging unit 11, driving unit 12, first reset unit 13, and second reset unit 14 in the first embodiment, and will not be described in detail here. The difference lies in that, in the fifth embodiment of this application, the microfluidic driving circuit further includes a second coupling unit 55.

[0120] The second coupling unit 55 includes a first end and a second end. The first end of the second coupling unit 55 is connected to the data line Data, and the second end of the second coupling unit 55 is connected to the control terminal of the charging subunit 111. In this embodiment, the data voltage output by the data line Data is located before the conduction signal output by the first scan signal line Scan1.

[0121] Optionally, the second coupling unit 55 includes a third capacitor C3.

[0122] Specifically, when the driving electrode needs to be written with a high potential, the data line Data first outputs a high-potential data voltage to charge the second coupling unit 55, thereby increasing the voltage at the control terminal of the charging sub-unit 511 in the charging unit 51. Then, the first scan signal line Scan1 controls the charging sub-unit 511 to turn on. Since the control terminal of the charging sub-unit 511 is pre-charged, the charging sub-unit 511 can turn on more quickly, enabling the microfluidic driving circuit to have a faster response speed. The high-potential data voltage output by the data line Data further charges the energy storage sub-unit 512 through the turned-on charging sub-unit 511, causing the potential of the first connection node A to rise, thereby controlling the conduction of the driving unit 52. The high-potential voltage source VGH writes the high voltage to the driving electrode through the turned-on driving unit 52. At the same time, due to the blocking effect of the energy storage sub-unit 512 and the fact that the first reset unit 53 is in the off state, the voltage drop of the first connection node A can be delayed. When the first scan signal line Scan1 controls the charging subunit 511 to turn off, the driving unit 52 remains in the conducting state due to the presence of the energy storage subunit 512. The high potential voltage output by the high potential voltage source VGH can still be delivered to the driving electrode through the driving unit 52.

[0123] When the driving electrode needs to be written to a low potential, the data line Data outputs a low potential data voltage. The first scan signal line Scan1 controls the charging sub-unit 511 to turn on, the voltage of the first connection node A is pulled down to a low potential, the driving unit 52 is turned off, and the second reset unit 54 is turned on based on the low potential of the first connection node A. The low potential voltage source VSS inputs the low potential voltage to the second connection node B through the turned-on second reset unit 54, that is, writes to the driving electrode. Since the low potential voltage source VSS is a DC voltage source, it can effectively maintain the low voltage of the second connection node B and prevent it from drifting.

[0124] Among them, see Figure 2 , Figure 4 , Figure 6 , Figure 7 , Figure 9 as well as Figure 11 The microfluidic driving circuit provided in the above embodiments of this application may further include a third reset unit 15. The third reset unit 15 includes a first path terminal, a second path terminal, and a control terminal. The first path terminal of the third reset unit 15 is connected to a low potential voltage source VSS. The second path terminal of the third reset unit 15 is connected to a second connection node B. The control terminal of the third reset unit 15 is connected to a second scan signal line Scan2. The second scan signal line Scan2 is used to control the third reset unit 15 to be turned on or off.

[0125] Optionally, the third reset unit 15 includes a sixth transistor T6, which can be a P-type transistor or an N-type transistor. In this embodiment, the sixth transistor T6 is an N-type transistor.

[0126] Specifically, by further configuring a third reset unit 15, and connecting the control terminal of the third reset unit 15 to the second scan signal line Scan2, when the microfluidic drive circuit in the previous row is working, the signal output on the second scan signal line Scan2 can also turn on the third reset unit 15 in this row, so that the low potential voltage source VSS can also pull down the potential of the second connection node B through the turned-on third reset unit 15, thereby realizing the dual reset of the drive electrode and improving the reliability of the drive electrode reset.

[0127] See Figure 12 and Figure 13 , Figure 12 A schematic flowchart illustrating the driving method of the microfluidic driving circuit provided in the embodiments of this application; Figure 13 Timing diagram of the microfluidic driving circuit and driving electrode provided in the embodiments of this application.

[0128] Specifically, this application also provides a driving method for a microfluidic driving circuit, the microfluidic driving circuit including any of the microfluidic driving circuits provided in the above embodiments, and specifically, the driving method includes:

[0129] Step S1: In the reset phase t1, the first reset unit is turned on by using the second scan signal line to output the low potential voltage from the low potential voltage source to the first connection node through the first reset unit to reset the control terminal of the drive unit, and the second reset unit is turned on to reset the drive electrode through the second reset unit.

[0130] Specifically, by connecting the control terminal of the first reset unit to the second scan signal line, and making the second scan signal line the scan signal line of the row preceding the current row, when the microfluidic driving circuit of the previous row is operating, the signal output on the second scan signal line can activate the first reset unit of this row. This allows a low-potential voltage source to pull down the potential of the first connection node through the activated first reset unit, thus resetting the control terminal of the driving unit. Furthermore, with the first connection node at a low potential, the second reset unit can also be activated, allowing the low-potential voltage source to reset the driving electrode through the activated second reset unit. Therefore, before the microfluidic driving circuit of this row operates, the control terminal and driving electrode of the driving unit in this row can be reset, clearing residual voltage on the control terminal and driving electrode of the driving unit in this row. This avoids the problem of voltage inconsistency between the control terminal and driving electrode of the driving unit in the current frame and the voltage in the previous frame, thereby improving the accuracy and stability of the driving electrode operation and enabling the microfluidic driving circuit to have a faster response speed.

[0131] Optionally, in the embodiments of this application, a reset operation is performed when the driving electrode switches from a high potential to a low potential and / or from a high potential to a low potential.

[0132] Step S2: In the data driving stage t2, the charging unit is turned on by using the first scan signal line to charge the first connection node with the data voltage output by the data line. When the driving unit is turned on based on the potential of the first connection node, the high potential voltage source drives the driving electrode to work through the turned-on driving unit.

[0133] Specifically, when the driving electrode needs to be written to a high potential (t21 stage), the data line outputs a high potential data voltage, the first scan signal line controls the charging unit to turn on, the potential of the first connection node rises, and then controls the driving unit to turn on. The high potential voltage source writes the high voltage to the driving electrode through the turned-on driving unit.

[0134] Furthermore, when the driving electrode needs to be written to a low potential (t22 stage), the data line outputs a low potential data voltage, the first scan signal line controls the charging sub-unit to be turned on, the voltage of the first connection node is pulled down to a low potential, the driving unit is turned off, and the second reset unit is turned on based on the low potential of the first connection node. The low potential voltage source inputs the low potential voltage to the second connection node through the turned-on second reset unit, that is, writes to the driving electrode. Since the low potential voltage source is a DC voltage source, it can effectively maintain the low voltage of the second connection node and prevent it from drifting.

[0135] Please see Figure 14 , Figure 14 This is a schematic diagram of the microfluidic device provided in the embodiments of this application.

[0136] This application also provides a microfluidic device 300. The microfluidic device 300 includes a driving electrode 200 and a microfluidic driving circuit 100, wherein the microfluidic driving circuit 100 includes the microfluidic driving circuit of any of the above embodiments, and the microfluidic driving circuit 100 is used to drive the driving electrode 200.

[0137] Specifically, the microfluidic drive circuit 100 in the microfluidic device 300 of this application can reset the control terminal and drive electrode 200 of the current row's drive unit when the previous row's microfluidic drive circuit 100 is working. This clears the residual voltage on the control terminal and drive electrode 200 of the current row's drive unit, avoiding the problem of voltage inconsistency between the control terminal and drive electrode 200 of the drive unit in the current frame and the voltage in the previous frame. This improves the accuracy and stability of the operation of the drive electrode 200, and enables the microfluidic drive circuit 100 to have a faster response speed and solve the problem of low potential drift. Therefore, it can accurately and stably control the droplet through the drive electrode 200, which is simple to operate, reduces the failure rate of droplet control, and improves control accuracy.

[0138] See Figure 15 , Figure 15 This is a schematic diagram of the microfluidic device provided in the embodiments of this application.

[0139] In this embodiment of the application, the microfluidic device 300 includes a first substrate 310 and a second substrate 320 disposed opposite to each other, and a channel 330 for accommodating one or more droplets is formed between the first substrate 310 and the second substrate 320.

[0140] The first substrate 310 includes a first substrate 3101, a common electrode 3102 and a first hydrophobic layer 3103, which are sequentially stacked toward the second substrate 320.

[0141] The second substrate 320 includes a second substrate 3201, a driving circuit layer 3202, a driving electrode 200, an insulating layer 3204, and a second hydrophobic layer 3205, which are sequentially stacked facing the first substrate 310. The insulating layer 3204 covers the driving electrode 200. The driving circuit layer 3202 includes a plurality of microfluidic driving circuits 100 arranged in an array, and the driving electrode 200 is correspondingly disposed with the microfluidic driving circuit 100.

[0142] Channel 330 is located between the first hydrophobic layer 3103 and the second hydrophobic layer 3205.

[0143] Specifically, the microfluidic device 300 controls the droplets to enter the channel 330 and drives the driving electrode 200 to realize the generation, transfer, mixing and splitting of droplets, and to perform precise and stable control of droplets.

[0144] The above are merely embodiments of this application and do not limit the scope of this patent application. Any equivalent structural or procedural changes made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A microfluidic driving circuit for driving driving electrodes in a microfluidic device, characterized in that, include: A charging unit, wherein a first path terminal of the charging unit is connected to a data line, and a control terminal of the charging unit is connected to a first scan signal line, wherein the data line is used to output data voltage, and the first scan signal line is used to control the charging unit to be turned on or off. A driving unit, wherein a first terminal of the driving unit is connected to a high-potential voltage source, and a second terminal of the driving unit is used to connect to the driving electrode; The first reset unit has a first path terminal connected to a low potential voltage source, a second path terminal of the first reset unit, the output terminal of the charging unit and the control terminal of the driving unit connected to a first connection node, and the control terminal of the first reset unit connected to a second scan signal line, wherein the second scan signal line is used to control the first reset unit to be turned on or off, and the second scan signal line is the scan signal line of the previous row of the current row. The second reset unit has a first path terminal connected to the low-potential voltage source, a second path terminal connected to the driving electrode, and a control terminal connected to the first connection node; wherein the second reset unit is used to conduct when the first connection node is at a low potential.

2. The microfluidic driving circuit according to claim 1, characterized in that, The charging unit includes: A charging subunit, wherein the first path terminal of the charging subunit is connected to the data line, and the control terminal of the charging subunit is connected to the first scan signal line; An energy storage subunit, wherein a first end of the energy storage subunit is connected to a second path end of the charging subunit, and a second end of the energy storage subunit is connected to the first connection node; The microfluidic driving circuit also includes: A first coupling unit, wherein a first end of the first coupling unit is connected to the first connection node, and a second end of the first coupling unit is used to connect to the driving electrode.

3. The microfluidic driving circuit according to claim 1, characterized in that, The charging unit includes: A charging subunit, wherein the first path terminal of the charging subunit is connected to the data line, and the control terminal of the charging subunit is connected to the first scan signal line; An energy storage subunit, wherein a first end of the energy storage subunit is connected to a second path end of the charging subunit, and a second end of the energy storage subunit is connected to the first connection node; The microfluidic driving circuit also includes: A potential maintenance unit is provided, wherein a first path terminal of the potential maintenance unit is connected to the high-potential voltage source, a second path terminal of the potential maintenance unit is connected between the second path terminal of the charging subunit and the first connection node, and a control terminal of the potential maintenance unit is connected to a third scan signal line; wherein the third scan signal line is used to control the potential maintenance unit to conduct when the driving electrode is written to a high potential state.

4. The microfluidic drive circuit according to claim 1, characterized in that, The charging unit includes: A charging subunit, wherein the first path terminal of the charging subunit is connected to the data line, and the control terminal of the charging subunit is connected to the first scan signal line; An energy storage subunit, wherein a first end of the energy storage subunit is connected to a second path end of the charging subunit, and a second end of the energy storage subunit is connected to the first connection node; The microfluidic driving circuit also includes: A potential maintenance unit is provided, wherein a first path terminal of the potential maintenance unit is connected to the high-potential voltage source, a second path terminal of the potential maintenance unit is connected between the second path terminal of the charging subunit and the first connection node, and a control terminal of the potential maintenance unit is connected to the first connection node; wherein the potential maintenance unit is turned on based on the first connection node being in a high-potential state. A first coupling unit, wherein a first end of the first coupling unit is connected to the first connection node, and a second end of the first coupling unit is used to connect to the driving electrode.

5. The microfluidic drive circuit according to any one of claims 1-4, characterized in that, The microfluidic driving circuit also includes: The third reset unit has a first path terminal connected to the low potential voltage source, a second path terminal connected to the driving electrode, and a control terminal connected to the second scan signal line, wherein the second scan signal line is used to control the third reset unit to be turned on or off.

6. The microfluidic drive circuit according to any one of claims 2-4, characterized in that, The microfluidic driving circuit also includes: The second coupling unit has a first end connected to the data line and a second end connected to the control terminal of the charging subunit. The data voltage output by the data line is located before the conduction signal output by the first scan signal line.

7. The microfluidic driving circuit according to claim 1, characterized in that, The first reset unit includes a third transistor group. The first path terminal of the third transistor group is connected to the low potential voltage source. The second path terminal of the third transistor group, the output terminal of the charging unit, and the control terminal of the driving unit are connected to the first connection node. The control terminal of the third transistor group is connected to the second scan signal line. The second reset unit includes a fourth transistor group, the first path terminal of the fourth transistor group is connected to the low potential voltage source, the second path terminal of the fourth transistor group is used to connect to the driving electrode, and the control terminal of the fourth transistor group is connected to the first connection node.

8. The microfluidic drive circuit according to claim 7, characterized in that, The third transistor group comprises N third transistors connected in series, where N is a positive integer greater than or equal to 1; and / or The fourth transistor group comprises M fourth transistors connected in series, where M is a positive integer greater than or equal to 1.

9. A microfluidic device, characterized in that, include: Drive electrode; A microfluidic driving circuit, wherein the microfluidic driving circuit comprises any one of the microfluidic driving circuits described in claims 1 to 8.

10. A driving method for a microfluidic driving circuit, characterized in that, The microfluidic driving circuit includes any one of claims 1 to 8, and the driving method includes: During the reset phase, the second scan signal line is used to control the first reset unit to be turned on, so that the low potential voltage output by the low potential voltage source is output to the first connection node through the first reset unit to reset the control terminal of the drive unit, and the second reset unit is controlled to be turned on, so that the low potential voltage output by the low potential voltage source is reset to the drive electrode through the second reset unit. During the data-driven phase, the charging unit is turned on using the first scan signal line to charge the first connection node with the data voltage output from the data line. When the driving unit is in the state of being turned on based on the potential of the first connection node, the high-potential voltage source drives the driving electrode to work through the turned-on driving unit.

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