Etching device and method for metal mask

By designing a special double-layer reaction chamber, etching solution supply system, and adjustable support stage, combined with a high-precision transfer mechanism and etching endpoint detection, the uniformity and adaptability problems in traditional dielectric etching technology have been solved, achieving high-precision and consistent metal mask etching.

CN121737709AInactive Publication Date: 2026-03-27SHANDONG AOLAI ELECTRONIC TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-06
Publication Date
2026-03-27
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Traditional dielectric etching technology suffers from problems such as poor etching uniformity, insufficient adaptation to etching complex structures, and poor transfer adaptability on metal masks, which affect the accuracy and consistency of patterns.

Method used

The system employs a specially designed double-layer reaction chamber, an etching solution supply and circulation system, an adjustable mask support stage, and a high-precision transfer mechanism, combined with an etching endpoint detection system, to ensure uniform distribution of the etching solution and stable reaction, thereby achieving high-precision etching.

Benefits of technology

It significantly improves the precision and uniformity of medium etching, effectively etching complex pattern structures, ensuring that the etched pattern has good verticality and high aspect ratio, and improving the consistency and success rate of the etched pattern.

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Abstract

The invention provides an etching device and method for a metal mask, relates to the technical field of medium etching, and solves the defect of poor etching uniformity. The reaction cavity main body adopts a double-layer structure design; the etching liquid supply and circulation system is provided with a peristaltic pump and connected to etching liquid pipelines on the upper side and the lower side, nozzles are fixedly installed at the tail ends of the etching liquid pipelines, fixing rods are arranged at the tops of the nozzles, annular grooves are formed in the peripheries of the fixing rods, and flow guide plates are rotationally clamped in the annular grooves. Radial flow guide holes are formed in the flow guide plate; the mask bearing table is a lifting structure rod, and the top end of the rod is provided with a rotatable bearing table through a waterproof miniature rotating machine. By designing the reaction cavity main body, the etching liquid supply and circulation system and the adjustable mask bearing table, the uniform distribution and stable reaction of the etching liquid on the surface of the metal mask coated with photoresist are effectively ensured, and the medium etching precision and uniformity are improved.
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Description

Technical Field

[0001] This invention relates to the field of dielectric etching technology, and more specifically to etching apparatus and method for metal photomasks. Background Technology

[0002] Metal mask fabrication involves processes such as cleaning, photoresist coating, exposure, development, and etching. Among these, chemical wet etching after photoresist coating is a typical application of dielectric etching and a crucial step in constructing intricate patterns. As semiconductor devices evolve towards miniaturization and high performance, higher demands are placed on the precision, uniformity, and adaptability to complex patterns in metal mask etching. However, traditional dielectric etching techniques have many limitations, such as: Poor etching uniformity: The flow state of the etching solution on the mask surface is difficult to control precisely, resulting in significant differences in etching rates in different areas. In particular, the etching effect is inconsistent between the edges and the center of large-size masks, which seriously affects the pattern accuracy and consistency. Insufficient adaptation to etching of complex structures: For high aspect ratio patterns, the etching solution cannot fully penetrate to the bottom of the structure, which easily forms a non-ideal shape that is wider at the top and narrower at the bottom. Moreover, the isotropic etching characteristics can easily lead to lateral corrosion of fine lines, causing the lines to widen and the pattern to be distorted. Poor transport adaptability: The axial position of traditional transport wheels is fixed, and the support position of masks of different sizes cannot be adjusted, which can easily block the etching area and thus affect the etching accuracy. Summary of the Invention

[0003] The purpose of this invention is to provide an etching apparatus and method for metal photomasks, which aims to significantly improve the accuracy and uniformity of dielectric etching, effectively adapt to the etching requirements of complex pattern structures, and at the same time realize flexible adjustment of the position of the conveyor wheel to meet the process requirements of high-precision photomask processing.

[0004] The first aspect of this disclosure provides an etching apparatus and method for a metal mask, specifically including: a reaction chamber body, a conveying mechanism, an etching solution supply and circulation system, and a mask support stage; the reaction chamber body adopts a specially designed double-layer structure: an outer reaction chamber and an inner reaction chamber installed inside it; the inner reaction chamber directly contacts the etching solution and the metal mask, and its material is selected from special ceramics that are resistant to strong corrosion, to ensure the smooth flow of the etching solution in the chamber and avoid uneven etching caused by local accumulation of etching solution; The outer reaction chamber maintains a stable temperature environment through a circulating temperature-controlled medium (such as an aqueous ethylene glycol solution), precisely controlling the temperature of the inner reaction chamber within ±0.5℃, thus providing stable thermodynamic conditions for the etching reaction. Baffles, consisting of a series of rectangularly arrayed guide vanes, are installed at the bottom inner and outer sides of the inner reaction chamber. These guide vanes help the etching solution form a stable and uniform flow field, ensuring that the etching solution impacts all parts of the metal mask at the same velocity and angle, greatly improving the uniformity of the etching process. A lifting rod is installed on the top right side of the outer reaction chamber. The top of the lifting rod is connected to a baffle plate, which is engaged in the outer extension plate at the top of the inner reaction chamber and in the left and right side panels of the outer reaction chamber. The bottom edge of the lowest position of the baffle plate is lower than the bottom edge of the through holes opened on the left and right sides of the outer and inner reaction chambers. A pressure sensor is installed on the top surface of the outer extension plate at the top of the inner reaction chamber. When the pipe above moves down and begins to spray the etching solution, the pressure sensor receives pressure and starts the lifting rod through the external circuit control terminal. The lifting rod drives the baffle plate down to seal the through holes in the outer reaction chamber, thereby preventing the etching solution from leaking until the etching is completed. The etching solution supply and circulation system is equipped with a high-precision peristaltic pump connected to etching solution pipelines on both the upper and lower sides. A nozzle is fixedly installed at the end of each etching solution pipeline. Flow control valves are installed on the pipelines with nozzles, and these valves are electrically connected to an external control terminal. A fixing rod is installed at the top of the nozzle, and an annular groove is formed around the fixing rod. A guide plate is rotatably engaged inside the annular groove. The guide plate has evenly distributed notches on its outer side and radial guide holes inside. The inclination angles of the inner and outer sides of the guide holes are different. An online concentration monitor and a filter are installed in the etching solution circulation loop. The filter is installed at the outlet end of the inner reaction chamber and consists of fiber filtration and a nano-membrane, effectively removing solid particles from the etching solution. Impurities are eliminated to prevent scratches and contamination on the etched surface, ensuring the purity of the etching solution and extending its service life. It can also be recycled, reducing production costs. An installed flow control valve allows for independent and precise control of the flow rate of various etching solution components, with a flow accuracy of ±0.1 mL / min. Before the etching solution enters the main body of the reaction chamber, a static mixer thoroughly mixes the different components, ensuring uniform composition for the etching reaction. An advanced spectral analysis instrument uses advanced technology to monitor the concentration changes of key components in the etching solution in real time and feeds the data back to the control system. The control system automatically adjusts the flow rate of the peristaltic pump according to the preset concentration range to replenish the consumed etching solution components, ensuring the etching solution concentration remains stable within the optimal etching range. The mask support platform is a lifting structure rod, with a rotatable support platform mounted on the top of the rod via a waterproof micro-rotor. The support platform is made of high-strength polytetrafluoroethylene (PTFE) material, which has excellent chemical stability and a low coefficient of friction, avoiding secondary contamination of the metal mask. The support platform also has a tilting function, with the tilt angle precisely adjustable between 0-15°. When etching high aspect ratio patterns, adjusting the tilt angle of the support platform can optimize the penetration and flow path of the etching solution within the pattern structure. Combined with the bottom spray structure, the angle, speed, and amount of etching solution sprayed can be controlled, ensuring that the bottom of the mask is also fully and uniformly etched, effectively improving the problem of insufficient bottom etching and ensuring that the etched pattern has good verticality and aspect ratio. The conveying mechanism is driven by a high-precision servo motor. The servo motor is fixedly connected to the front side panel of the outer reaction chamber via a mounting bracket. The drive shaft of the servo motor is coaxially connected to a drive rod. Baffles are fixedly welded to the front and rear ends of the drive rod. Rotary rods are arranged at equal intervals on the right side of the drive rod. Both the drive rod and the rotating rods penetrate the front and rear panels of the reaction chamber body, and bearings are installed at the penetration points. Waterproof covers are installed on the front and rear sides of the bearings along their axial direction. Baffles are fixedly welded to the front and rear sides of the rotating rods. A transmission belt is installed inside the baffles. A locking rod and a conveying wheel are provided on the outer wall of the drive rod. Adjustable rotating rods are radially fixedly engaged on the front and rear sides of the drive rod via locking rods. A conveying wheel is installed on the outside of the adjustable rotating rods. A linkage frame is engaged inside the adjustable rotating rods. The drive rod rotates at a uniform speed driven by the servo motor. All rotating rods rotate synchronously via the transmission belt. The adjustable rotating rods rotate synchronously at a uniform speed driven by the drive rods and rotating rods. By conveying the mask at a uniform speed, the etching solution can be more evenly distributed on its surface, further improving the etching uniformity.

[0005] In at least some embodiments, an etching endpoint detection system (not shown in the figure) is provided next to the main body of the reaction chamber. The etching endpoint detection system uses optical interferometry to monitor the etching process in real time. A high-resolution optical sensor is installed above the main body of the reaction chamber. The optical sensor emits a laser beam of a specific wavelength. The laser beam passes through the etching liquid and irradiates the surface of the metal mask and is reflected. The interference fringes of the reflected light will change accordingly. By analyzing and calculating the interference fringes in real time, the etching depth information can be accurately obtained. When the etching depth reaches the preset value, the system immediately sends a signal to automatically stop the etching process, thereby achieving precise control of the etching endpoint, avoiding over-etching or under-etching, and improving etching accuracy. The depth resolution of the etching endpoint detection system is ±0.01μm, which can meet the requirements of high-precision etching processes.

[0006] In at least some embodiments, an annular groove is provided on the front side of the linkage frame. The cross-section of the annular groove is T-shaped and a clamping plate is engaged inside. A push rod of a monorail cylinder is fixedly welded to the front end of the clamping plate. A support frame is mounted on the bottom of the monorail cylinder. The monorail cylinder and the linkage frame constitute an adjustment component. After the monorail cylinder is started by the external circuit control terminal, the push rod pushes the clamping plate to move, thereby pulling the linkage frame to move axially on the drive rod or rotating rod. The axial position of the adjustable rotating rod can then be adjusted, thereby ensuring that the conveying wheel on the adjustable rotating rod does not block the position of the mask that needs to be etched by the medium, ensuring the success rate and accuracy of the medium etching. At the same time, the adjustment does not affect the rotation of the adjustable rotating rod or the drive rod, and does not affect normal conveying.

[0007] In at least some embodiments, rectangular plates are provided on both sides of the bottom of the support frame, and diagonal bracing plates are welded between the front and rear panels of the support frame. The rectangular plates are fastened to the top surface of the mounting frame by bolt assemblies, and the bottom of the mounting frame is fixedly connected to the outer end face of the outer reaction chamber by triangular brackets. The mounting frame supports the motor and provides a foundation for the installation and fixation of the support frame. The diagonal bracing plates ensure the stability of the support frame and ensure that the monorail cylinder remains stable.

[0008] This invention discloses an etching method for an etching apparatus used for metal photomasks, comprising the following steps: 1) Mask pretreatment: The metal mask to be etched is placed in a cleaning device and cleaned; after coating with photoresist, it is exposed and developed to complete the pretreatment before etching; 2) Etching solution preparation and introduction: Based on the material of the metal mask and the etching requirements, the etching solution is precisely prepared. Taking the etching of Invar (alloy) metal mask as an example, a mixed etching solution containing ferric chloride (concentration of 2-4 mol / L), hydrochloric acid (concentration of 0.5-1 mol / L) and organic corrosion inhibitor (such as urea with a concentration of 0.05-0.1 mol / L) is prepared and delivered to the main body of the reaction chamber through a high-precision peristaltic pump according to the set flow rate. The total flow rate of the etching solution is controlled between 50-100 mL / min. 3) Etching Implementation: Place the pretreated metal mask on the mask support platform. Adjust the tilt angle of the support platform according to the complexity of the etching pattern. Turn on the temperature control system of the reaction chamber to stabilize the etching solution temperature between 25-35℃. During the etching process, monitor the changes in the composition concentration of the etching solution in real time using an online concentration monitor. When key components (such as H+, Fe) are detected... 3When the concentration of the etching solution drops to the preset lower limit, the control system automatically starts the peristaltic pump to replenish the corresponding etching solution components and maintain the stability of the etching solution concentration. The etching endpoint detection system (not shown in the figure) uses optical interferometry to monitor the etching depth in real time. When the etching depth reaches the design requirements, the system immediately issues a command to stop the delivery of the etching solution and the tilting of the support stage, thus completing the etching.

[0009] This invention provides an etching apparatus and method for metal photomasks, which have the following advantages: This invention, through the design of the reaction chamber body, the etching solution supply and circulation system, and the adjustable mask support stage, effectively ensures the uniform distribution and stable reaction of the etching solution on the surface of the metal mask after photoresist coating, improves the etching accuracy and uniformity, and greatly enhances the consistency of the etching pattern.

[0010] In addition, it can effectively handle etching of high aspect ratio and complex graphic structures. By adjusting the tilt angle of the support platform, the upper and lower nozzles and guide plates spray the etching solution evenly, so that the etching solution can fully penetrate into all parts of the graphic structure, ensuring that the bottom is fully etched, and the etched pattern has good verticality and aspect ratio.

[0011] In addition, after the monorail cylinder is activated by the external circuit control terminal, the push rod pushes the plate to move, thereby pulling the linkage frame to move axially on the drive rod or rotating rod. The axial position of the adjustable rotating rod can be adjusted, thereby ensuring that the transmission wheel on the adjustable rotating rod does not block the position of the mask to be etched, thus ensuring the success rate and accuracy of the medium etching. Attached Figure Description

[0012] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings of the embodiments will be briefly described below.

[0013] The accompanying drawings described below are only related to some embodiments of the invention and are not intended to limit the invention.

[0014] In the attached diagram: Figure 1 The diagram shown is a schematic representation of the main body of the reaction chamber of this invention. Figure 2 The diagram shows the internal structure of the internal reaction chamber during the etching of a metal mask according to the present invention. Figure 3 The diagram shown is a schematic representation of the external reaction chamber of this invention. Figure 4 The present invention is shown. Figure 1 Enlarged structural diagram at point A; Figure 5 The present invention is shown. Figure 1 Enlarged structural diagram at point B; Figure 6 The present invention is shown. Figure 1 Enlarged structural diagram at point C; Figure 7 The diagram shown is a structural schematic of the drive rod and the adjustable rotating rod of the present invention. Figure 8 The diagram shown is a partial cross-sectional view of the nozzle of the present invention. Figure 9 The present invention is shown. Figure 1 A schematic diagram of the structure from an upward perspective; Figure 10 The diagram shown is a structural schematic of the adjusting component of the present invention.

[0015] List of reference numerals 1. Reaction chamber body; 11. Outer reaction chamber; 12. Inner reaction chamber; 2. Conveying mechanism; 21. Drive rod; 22. Adjustable rotating rod; 3. Etching solution supply and circulation system; 301. Nozzle; 3011. Guide plate; 4. Mask plate support platform; 5. Adjusting component; 51. Linkage frame; 52. Monorail cylinder; 6. Support frame. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the described embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0017] Example: Please refer to the appendix. Figure 1 To be continued Figure 10 : This invention proposes an etching apparatus and method for metal photomasks. The etching apparatus includes: a reaction chamber body 1, a conveying mechanism 2, an etching solution supply and circulation system 3, and a photomask support stage 4. The reaction chamber body 1 adopts a specially designed double-layer structure: an outer reaction chamber 11 and an inner reaction chamber 12 installed inside it. The inner reaction chamber 12 directly contacts the etching solution and the metal photomask, and its material is selected from special ceramics that are resistant to strong corrosion, ensuring smooth flow of the etching solution within the chamber and avoiding uneven etching caused by local accumulation of the etching solution. The outer reaction chamber 11 maintains a stable temperature environment through a circulating temperature-controlled medium (such as an aqueous ethylene glycol solution), which in turn carries the inner reaction solution to the metal photomask. The temperature of the inner reaction chamber 12 is precisely controlled within ±0.5℃ to provide stable thermodynamic conditions for the etching reaction. Baffles, consisting of a series of rectangularly arrayed guide vanes, are installed on the inner and outer bottom sides of the inner reaction chamber 12. These guide vanes help to form a stable and uniform flow field, ensuring that the etching solution impacts all parts of the metal mask at the same velocity and angle, greatly improving etching uniformity. A lifting rod is installed on the top right side of the outer reaction chamber 11. A baffle is connected to the top of the moving rod, and the baffle is engaged in the outer extension plate at the top of the inner reaction chamber 12, and also in the left and right side panels of the outer reaction chamber 11. The bottom edge of the lower position is lower than the height of the bottom edge of the through holes opened on the left and right sides of the outer reaction chamber 11 and the inner reaction chamber 12. A touch pressure sensor is installed on the top surface of the outer extension plate at the top of the inner reaction chamber 12. The etching solution supply and circulation system 3 is equipped with a high-precision peristaltic pump and connected to the etching solution pipes on the upper and lower sides. A nozzle 301 is fixedly installed at the end of the etching solution pipe. A flow control valve is installed on the pipe with the nozzle 301, and the flow control valve is electrically connected to an external control terminal. A fixing rod is set on the top of the nozzle 301. An annular groove is opened on the periphery of the fixing rod. A guide plate 3011 is rotatably engaged inside the annular groove. A uniform flow distribution plate is opened on the outer side of the guide plate 3011. The etching solution features evenly distributed notches and radially arranged guide holes inside the guide plate 3011. The inclination angles of the inner and outer sides of the guide holes are different. An online concentration monitor and a filter are installed in the etching solution circulation loop. The filter is installed at the outlet end of the inner reaction chamber 12. The filter is composed of fiber filtration and nano-membrane, which can effectively remove solid particulate impurities in the etching solution, prevent them from scratching and contaminating the etching surface, ensure the purity of the etching solution, extend the service life of the etching solution, and can be recycled to reduce production costs. The etching solution supply and circulation system 3 can independently and accurately control the flow rate of various etching solution components, with a flow rate accuracy of ±0.At a flow rate of 1 mL / min, the etching solution is thoroughly mixed with different components using a static mixer before entering the main body 1 of the reaction chamber, ensuring uniform composition for the etching reaction. An advanced spectral analysis instrument monitors the concentration changes of key components in the etching solution in real time and feeds the data back to the control system. The control system automatically adjusts the flow rate of the peristaltic pump according to the preset concentration range to replenish the consumed etching solution components, ensuring the etching solution concentration remains stable within the optimal etching range. The mask support platform 4 is a lifting structure rod, with a rotatable support platform mounted at the top via a waterproof micro-rotor. The support platform is made of high-strength polyethylene. Made of PTFE (polytetrafluoroethylene), this material boasts excellent chemical stability and a low coefficient of friction, preventing secondary contamination of the metal mask. The stage also features a tilting function, with the tilt angle precisely adjustable between 0-15°. When etching high aspect ratio patterns, adjusting the stage's tilt angle optimizes the penetration and flow path of the etching solution within the pattern. Combined with the bottom spray structure, the angle, speed, and volume of the etching solution sprayed are controllable, ensuring thorough and uniform etching of the mask's bottom surface. This effectively addresses insufficient bottom etching, guaranteeing the etched pattern exhibits excellent verticality and aspect ratio.

[0018] In this embodiment, the conveying mechanism 2 is driven by a high-precision servo motor. The servo motor is fixedly connected to the front side panel of the outer reaction chamber 11 via a mounting bracket. The drive shaft of the servo motor is coaxially connected to a drive rod 21. Baffles are fixedly welded to the front and rear ends of the drive rod 21. Rotary rods are arranged at equal intervals on the right side of the drive rod 21. Both the drive rod 21 and the rotating rods penetrate the front and rear panels of the reaction chamber body 1, and bearings with waterproof covers are installed at the penetration points. Baffles are provided at the front and rear ends of the rotating rods, and a transmission belt is installed on the inner side. A locking rod is provided on the outer wall of the drive rod 21. The drive rod 21 has an adjustable rotating rod 22 that is radially and fixedly connected to the front and rear sides of the drive rod 21 via a locking rod. The drive rod 22 has a drive wheel installed on its exterior and a linkage frame 51 connected inside. The drive rod 21 rotates at a constant speed driven by a servo motor, and all rotating rods rotate synchronously via a transmission belt. The adjustable rotating rod 22 rotates synchronously and at a constant speed driven by the drive rod 21 and the rotating rods. By uniformly conveying the mask, the etching solution can be distributed more evenly on its surface, further improving the etching uniformity.

[0019] In this embodiment, the etching endpoint detection system utilizes optical interferometry to monitor the etching process in real time. A high-resolution optical sensor is installed above the reaction chamber body 1. The optical sensor emits a laser beam of a specific wavelength. The laser beam passes through the etching liquid and irradiates the surface of the metal mask, where it is reflected. The interference fringes of the reflected light change accordingly. By analyzing and calculating the interference fringes in real time, the etching depth information can be accurately obtained. When the etching depth reaches a preset value, the system immediately sends a signal to automatically stop the etching process, achieving precise control of the etching endpoint, avoiding over-etching or under-etching, and improving etching accuracy. The etching endpoint detection system has a depth resolution of ±0.01μm, which can meet the requirements of high-precision etching processes.

[0020] In the embodiments disclosed herein, as shown in the appendix Figure 7 As shown, rectangular plates are provided on both sides of the bottom of the support frame 6. A diagonal brace is welded between the front and rear panels of the support frame 6. The rectangular plates are fastened to the top surface of the mounting frame by bolt assembly. The bottom of the mounting frame is fixedly connected to the outer end face of the outer reaction chamber 11 by a triangular bracket. The mounting frame supports the motor and provides a foundation for the installation and fixation of the support frame 6. The diagonal brace ensures the stability of the support frame 6 and ensures that the monorail cylinder 52 remains stable.

[0021] In the embodiments disclosed herein, as shown in the appendix Figure 9 As shown, an annular groove is provided on the front side of the linkage frame 51. The cross-section of the annular groove is T-shaped and a clamping plate is inserted inside. The push rod of the monorail cylinder 52 is fixedly welded to the front end of the clamping plate. A support frame 6 is mounted on the bottom of the monorail cylinder 52. The monorail cylinder 52 and the linkage frame 51 form an adjustment component 5. After the monorail cylinder 52 is started by the external circuit control terminal, the push rod pushes the clamping plate to move, thereby pulling the linkage frame 51 to move axially on the drive rod 21 or the rotating rod. The axial position of the adjustable rotating rod 22 can be adjusted, thereby ensuring that the conveying wheel on the adjustable rotating rod 22 does not block the position of the mask that needs to be etched by the medium, ensuring the success rate and accuracy of the medium etching. At the same time, the adjustment does not affect the rotation of the adjustable rotating rod 22 or the drive rod 21, and does not affect the normal conveying.

[0022] The working principle of this embodiment is as follows: First, the metal mask to be etched is cleaned in a cleaning device; after coating with photoresist, it undergoes exposure and development to complete the pre-etching pretreatment; then, according to the material of the metal mask and the etching requirements, the etching solution is precisely prepared. Taking the etching of an Invar (alloy) metal mask as an example, a mixed etching solution containing ferric chloride (concentration of 2-4 mol / L), hydrochloric acid (concentration of 0.5-1 mol / L), and an organic etching inhibitor (such as urea with a concentration of 0.05-0.1 mol / L) is prepared. A high-precision peristaltic pump delivers the prepared etching solution to the reaction chamber body 1 at a set flow rate, with the total flow rate controlled between 50-100 mL / min. Finally, the pretreated metal mask is placed on the mask support platform. The tilt angle of the platform is adjusted according to the complexity of the etching pattern. The temperature control system of the reaction chamber body 1 is activated to stabilize the etching solution temperature between 25-35℃. During the etching process, the compositional concentration changes of the etching solution are monitored in real time using an online concentration monitor. When key components (such as H+, Fe) are detected... 3 When the concentration of the etching solution drops to the preset lower limit, the control system automatically starts the peristaltic pump to replenish the corresponding etching solution components and maintain the stability of the etching solution concentration. The etching endpoint detection system using optical interferometry monitors the etching depth in real time. When the etching depth reaches the design requirements, the system immediately issues a command to stop the delivery of the etching solution and the tilting of the support stage, thus completing the etching.

Claims

1. An etching apparatus for metal photomasks, characterized in that, include: The reaction chamber body (1), the conveying mechanism (2), the etching solution supply and circulation system (3), and the mask support stage (4) are included. The reaction chamber body (1) adopts a double-layer structure design: an outer reaction chamber (11) and an inner reaction chamber (12) installed inside it. The conveying mechanism (2) is driven by a high-precision servo motor. The drive shaft of the servo motor is coaxially connected to a drive rod (21). The front and rear sides of the drive rod (21) are radially fixedly clamped with adjustable rotating rods (22) by clamps. The outside of the adjustable rotating rod (22) is equipped with a conveying wheel, and the inside of the adjustable rotating rod (22) is clamped with a linkage frame (51). The etching solution supply and circulation system (3) is equipped with a peristaltic pump and connected to the etching solution pipes on the upper and lower sides. The end of the etching fluid pipeline is fixedly installed with a nozzle (301). The top of the nozzle (301) is provided with a fixed rod. The outer periphery of the fixed rod is provided with an annular groove. The inside of the annular groove is rotatably clamped with a guide plate (3011). The inside of the guide plate (3011) is provided with radial guide holes. The mask plate support platform (4) is a lifting structure rod. The top of the rod is installed with a rotatable support platform through a waterproof micro rotating machine. The front side of the linkage frame (51) is provided with an annular groove. The cross-section of the annular groove is T-shaped and a clamping plate is clamped inside. The front end of the clamping plate is fixedly welded with the push rod of the monorail cylinder (52). The bottom of the monorail cylinder (52) is supported by a support frame (6). The monorail cylinder (52) and the linkage frame (51) form an adjustment component (5).

2. The etching apparatus for a metal mask according to claim 1, characterized in that, The inner bottom and outer bottom of the inner reaction chamber (12) are respectively provided with baffles, which are composed of a series of guide vanes arranged in a rectangular array. A touch pressure sensor is installed on the top surface of the outer extension plate of the inner reaction chamber (12). A lifting rod is installed on the top right side of the outer reaction chamber (11). A baffle is connected to the top of the moving rod of the lifting rod. The baffle is engaged in the outer extension plate of the inner reaction chamber (12) and the left and right side panels of the outer reaction chamber (11). The bottom edge of the lowest position of the baffle is lower than the bottom edge of the through holes opened on the left and right sides of the outer reaction chamber (11) and the inner reaction chamber (12).

3. The etching apparatus for a metal mask according to claim 2, characterized in that, The servo motor is fixedly connected to the front side panel of the outer reaction chamber (11) by a mounting bracket. The drive rod (21) and the rotating rod both pass through the front and rear panels of the reaction chamber body (1) and a bearing is installed at the passage. Waterproof covers are installed on the front and rear sides of the bearing. Baffles are fixedly welded to the front and rear ends of the drive rod (21). Rotating rods are arranged at equal intervals on the right side of the drive rod (21). Baffles are fixedly welded to the front and rear sides of the rotating rods. A transmission belt is installed on the inner side of the baffle. A locking rod and a transmission wheel are provided on the outer wall of the drive rod (21).

4. The etching apparatus for a metal mask according to claim 3, characterized in that, The etching fluid pipeline on which the nozzle (301) is installed is equipped with a flow control valve, and the flow control valve is electrically connected to an external control terminal. The outer side of the guide plate (3011) has evenly distributed notches. The inclination angles of the inner and outer sides of the guide hole inside the guide plate (3011) are different. An online concentration monitor and a filter are installed in the etching fluid circulation loop. The filter is installed at the outlet end of the inner reaction chamber (12). The filter is composed of fiber filtration and nano membrane.

5. The etching apparatus for a metal mask according to claim 1, characterized in that, The support platform is made of high-strength polytetrafluoroethylene material.

6. The etching apparatus for a metal mask according to claim 2, characterized in that, The support frame (6) has rectangular plates on both sides of its bottom. A diagonal brace is welded between the front and rear panels of the support frame (6). The rectangular plates are fastened to the top surface of the mounting frame by bolt assembly. The bottom of the mounting frame is fixedly connected to the outer end face of the outer reaction chamber (11) by a triangular bracket.

7. The etching method for an etching apparatus for a metal photomask according to any one of claims 1-6, characterized in that, Includes the following steps: 1) Mask pretreatment: Clean the metal mask to be etched in a cleaning device; After coating with photoresist, the pretreatment before etching is completed through exposure and development; 2) Etching solution preparation and introduction: Based on the material of the metal mask and the etching requirements, the etching solution is precisely prepared and delivered to the main body of the reaction chamber (1) by a peristaltic pump at the set flow rate. The total flow rate of the etching solution is controlled between 50-100 mL / min. 3) Etching implementation: Place the pre-treated metal mask on the mask support platform. Adjust the tilt angle of the support platform and the servo motor speed of the conveying mechanism (2) according to the complexity of the etching pattern. Turn on the temperature control system of the reaction chamber body (1) to stabilize the temperature of the etching solution between 25-35℃. During the etching process, monitor the changes in the composition concentration of the etching solution in real time through an online concentration monitor. When the concentration of the key component drops to the preset lower limit, the control system automatically starts the peristaltic pump to replenish the corresponding etching solution components and maintain the stability of the etching solution concentration.