Panel-level electroplating simulation method and device and electronic equipment
By employing a secondary current distribution model and spatial distribution function in panel-level electroplating simulation, the limitations of computational resources and the explosion of mesh numbers for large-area electroplating objects are solved, achieving high-precision and efficient simulation of metal deposition thickness distribution.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-30
- Publication Date
- 2026-03-27
AI Technical Summary
Existing electroplating simulation technology consumes a great deal of computational resources in large-area electroplating objects at the panel level, and it is difficult to reliably identify ECAD files and control the number of meshes, making it difficult to efficiently and reliably complete the evaluation and optimization of electroplating thickness uniformity.
A method based on a secondary current distribution model combined with a spatial distribution function is adopted. The influence of electrolyte flow on the electroplating process is simulated by the target spatial distribution function. A global simulation model is established to avoid explicit fluid field solving. The target region is divided by the aperture ratio for pattern equivalence processing.
It achieves high-precision and high-efficiency simulation of metal deposition thickness distribution in large-area panel-level systems, reduces computational resource consumption and mesh number explosion problems, and improves simulation accuracy and efficiency.
Smart Images
Figure CN121744708A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of panel-level simulation, in particular to a panel-level electroplating simulation method and device and electronic equipment. BACKGROUND
[0002] At present, electroplating simulation technology has been widely used in the manufacturing process of small-size devices such as wafers and printed circuit boards (PCB). The existing electroplating simulation software usually predicts the deposition rate and thickness distribution of the metal layer on the wafer or PCB surface based on a one-time or two-time current distribution model combined with electrochemical kinetics parameters. The typical size of such simulation objects is tens of millimeters to hundreds of millimeters, the overall area is relatively small, and the pattern density and complexity are within a controllable range, so grid division, solution and result post-processing can be completed under the condition of conventional computer hardware.
[0003] With the development of panel-level packaging (PLP) technology, the electroplating object gradually expands from wafer-level systems to panel-level systems. The typical size of a panel-level system can reach 500 mm x 500 mm or even larger, which is significantly larger than the traditional wafer-level or PCB-level object. On such a large-area panel structure, thousands or even tens of thousands of repeated or non-repeated electroplating patterns need to be simulated simultaneously to evaluate the metal deposition thickness uniformity within the entire panel structure. Compared with wafer-level systems, the in-plane uniformity of metal layer deposition in panel-level systems has become a key factor in determining the quality and yield of electroplating.
[0004] However, for panel-level large-area electroplating objects, the existing high-precision methods based on fluid simulation and geometric processing methods based on direct modeling of real micro-patterns all have problems such as excessive consumption of computing resources, difficulty in stable identification of ECAD files, and difficulty in controlling the number of grids, making it difficult to efficiently and reliably complete the uniformity evaluation and optimization of electroplating thickness in engineering practice. SUMMARY
[0005] In order to at least overcome the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a panel-level electroplating simulation method, comprising: obtaining the geometric parameters of a target panel structure and the preset parameters of a target electroplating system; establishing a target global simulation model of the target panel structure based on the geometric parameters and the preset parameters; wherein the target global simulation model includes a target spatial distribution function, and the target spatial distribution function is used to equivalently simulate the influence of electrolyte flow in the target electroplating system on the electroplating process at any position of the target panel structure; perform simulation calculation based on the target global simulation model to determine a target simulation thickness cloud atlas of the target panel structure.
[0006] In a possible implementation, before the step of obtaining the geometric parameters of the target panel structure and the preset parameters of the target electroplating system, the method further comprises: dividing a surface of the target panel structure into a plurality of target regions, and obtaining an opening rate of each target region; wherein the opening rate is a ratio of a sum of areas of patterns that need to be electroplated in each target region to a total area. The step of obtaining the geometric parameters of the target panel structure comprises: obtaining the opening rates corresponding to the plurality of target regions, physical dimensions of the target panel structure, and an overall shape.
[0007] In a possible implementation, the step of establishing the target global simulation model of the target panel structure based on the geometric parameters and the preset parameters further comprises: determining a correction coefficient corresponding to each target region; establishing the target global simulation model of the target panel structure based on the correction coefficient, the geometric parameters, and the preset parameters.
[0008] In a possible implementation, after the step of performing simulation calculation based on the target global simulation model to determine a target simulation thickness cloud atlas of the target panel structure, the method further comprises: establishing a local simulation submodel of the target panel structure based on the geometric parameters and the preset parameters corresponding to each target region; performing simulation calculation based on the local simulation submodel corresponding to the target region to determine a target simulation thickness sub-cloud atlas of the target region.
[0009] In a possible implementation, the target electroplating system comprises an electroplating tank, an anode component, and a fluid guiding component located in the electroplating tank, wherein the anode component is arranged opposite to the target panel structure. The preset parameters comprise geometric model data of the target electroplating system, physical property parameters and reaction kinetics parameters of an electrochemical system, and operation parameters and boundary conditions of an electroplating process. The geometric model data of the target electroplating system comprises geometric shapes and sizes of the anode component and position data of the anode component relative to the target panel structure, and geometric shapes of the fluid guiding component in the electroplating tank and position data of the fluid guiding component relative to the target panel structure; the physical property parameters and reaction kinetics parameters of the electrochemical system comprise concentrations and conductivities of components of an electroplating solution; and the operation parameters and boundary conditions of the electroplating process comprise set time, set flow rate, and fluid characteristic parameters of an electrolyte.
[0010] In a possible implementation, the step of determining the target simulation thickness cloud of the target panel structure based on the simulation calculation of the target global simulation model comprises: determining target global current density distribution data of the target panel structure based on the simulation calculation of the target global simulation model; determining the target simulation thickness cloud based on the target global current density distribution data.
[0011] In a possible implementation, after the step of determining the target simulation thickness cloud of the target panel structure based on the simulation calculation of the target global simulation model, the method further comprises: determining the corrected geometric parameters and the preset parameters based on the target simulation thickness cloud.
[0012] Based on the same inventive concept, the present application further provides a panel-level electroplating simulation device, which comprises: an acquisition module configured to acquire geometric parameters of a target panel structure and preset parameters of a target electroplating system; a model construction module configured to establish a target global simulation model of the target panel structure based on the geometric parameters and the preset parameters, wherein the target global simulation model comprises a target spatial distribution function, and the target spatial distribution function is configured to equivalently simulate an influence of electrolyte flow in the target electroplating system on an electroplating process at any position of the target panel structure; a determination module configured to determine a target simulation thickness cloud of the target panel structure based on the simulation calculation of the target global simulation model.
[0013] Based on the same inventive concept, the present application further provides an electronic device, which comprises: a storage medium configured to store one or more programs; a processor configured to implement the method according to any one of the preceding embodiments when the one or more programs are executed by the processor.
[0014] Based on the same inventive concept, the present application further provides a machine readable storage medium, which stores machine executable instructions, and the machine executable instructions are executed by a processor to implement the method according to any one of the preceding embodiments.
[0015] Compared with the prior art, the present application has the following beneficial effects: The application provides a panel-level electroplating simulation method and device and electronic equipment, fluid effects are introduced under the premise of not explicitly solving a fluid field by adopting a mode based on secondary current distribution and in combination with a spatial distribution function, not only problems such as computer resource limitation and grid number explosion in the related art are effectively overcome, but also high-precision and high-efficiency simulation of large-area panel-level system metal deposition thickness distribution is realized. BRIEF DESCRIPTION OF DRAWINGS
[0016] In order to more clearly illustrate the technical solutions of the embodiments of the application, the drawings required to be called in the embodiments will be briefly introduced as follows, and it should be understood that the following drawings only show some of the embodiments of the application, and therefore should not be regarded as a limitation on the scope, and for those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.
[0017] Figure 1 One of the flowcharts of the panel-level electroplating simulation method provided by the embodiment; Figure 2 The global measured thickness cloud map of the surface of the target panel structure after a uniform current density is applied to the target panel structure; Figure 3 The simulation thickness cloud map of the surface of the target panel structure obtained without using the target spatial distribution function; Figure 4 The simulation thickness cloud map of the surface of the target panel structure obtained by the panel-level electroplating simulation method of the embodiment; Figure 5 The local schematic view of the target region of the target panel structure; Figure 6 The simplified pattern of the target region obtained by the panel-level electroplating simulation method of the embodiment; Figure 7 The second flowchart of the panel-level electroplating simulation method provided by the embodiment; Figure 8 The simulation thickness cloud map of the simplified pattern of the target region obtained by the panel-level electroplating simulation method of the embodiment; Figure 9 The simulation thickness sub-cloud map of the target region obtained by the panel-level electroplating simulation method of the embodiment; Figure 10 The structural schematic view of the panel-level electroplating simulation device provided by the embodiment; Figure 11 The structural schematic view of the electronic equipment provided by the embodiment.
[0018] Icon: electronic device-800; processor-810; machine readable storage medium-820; panel level electroplating simulation device-830; obtaining module-831; model building module-832; determining module-833. DETAILED DESCRIPTION
[0019] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.
[0020] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.
[0021] It should be noted that: similar reference numbers and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.
[0022] In the description of the present application, it should be noted that the terms "upper", "lower", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present application is usually placed, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.
[0023] In addition, the terms "horizontal", "vertical", "overhanging", and the like do not mean that the components must be absolutely horizontal or overhanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.
[0024] It should be noted that, in the description of the present application, unless otherwise explicitly specified and limited, the terms "arrange", "mount", "connect", "connect" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0025] It should be noted that, in the case of no conflict, the different features in the embodiments of the present application can be combined with each other.
[0026] The inventor found that, in order to improve the simulation accuracy of panel-level electroplating, the related technology tries to introduce fluid mechanics simulation on the basis of current distribution model, to perform three-dimensional numerical calculation on the flow field of electrolyte, to solve the coupling electrochemical reaction process of flow field and concentration field, and to more truly reflect the mass transfer conditions and polarization behavior at different positions. However, for a large-area panel object with a size of 500 mm x 500 mm, the above electroplating simulation method based on fluid simulation needs to construct a large-scale three-dimensional fluid grid and perform multi-physical field coupling solution, the number of calculation units is huge, the memory occupation and the calculation time increase exponentially, and it is easy to exceed the carrying capacity of existing computer hardware resources.
[0027] On the other hand, a large number of small electroplating patterns are often arranged in a panel-level system. For example, thousands or even more small pattern units are arrayed on a single panel structure. The existing simulation process usually directly imports these small patterns into the electroplating simulation software, and generates a geometric model and a grid based on an electronic computer-aided design file (ECAD file). For the scene of large-area panel structure and high-density small pattern combination, the ECAD file is prone to error problems such as file parsing failure, format abnormality or data loss in the import and identification process; at the same time, directly modeling and meshing all real small patterns will lead to an explosive growth of the number of grids, greatly increasing the solution scale, further increasing the calculation resource occupation, and even causing the simulation to fail to converge or the program to crash.
[0028] Therefore, the present embodiment provides a solution that can reduce the risk of the above problems, and the solution provided by the present embodiment is described in detail as follows.
[0029] The present application provides a panel-level electroplating simulation method, please refer to Figure 1 , comprising the following steps.
[0030] Step S11, obtaining the geometric parameters of the target panel structure and the preset parameters of the target electroplating system.
[0031] For example, the geometric parameters of the target panel structure include its physical dimensions and overall shape, which are used to realize thickness simulation.
[0032] For example, the target electroplating system includes an electroplating tank and an anode component and a fluid guiding component located in the electroplating tank.
[0033] It should be understood that in the present application, the physical space of the electroplating tank is mapped to a simulated calculation domain, the anode component entity in the electroplating tank and the cathode surface entity of the target panel structure are mapped to boundary geometries in the calculation domain; the physicochemical properties of the electrolyte used in the electroplating step are mapped to the material parameters of the calculation domain, the electrochemical reaction dynamic parameters of the electrolyte are mapped to the constitutive relationship on the cathode boundary; the power supply process of the power supply is mapped to the current condition of the anode boundary, etc., to obtain the target simulation thickness cloud map.
[0034] Step S12, based on the geometric parameters and the preset parameters, a target global simulation model of the target panel structure is established; wherein the target global simulation model includes a target spatial distribution function, and the target spatial distribution function is used to equivalently simulate the influence of electrolyte flow in the target electroplating system on the electroplating process at any position of the target panel structure.
[0035] In order to solve the calculation resource bottleneck caused by fluid field solving in large-area electroplating simulation, the present application discards the explicit fluid mechanics simulation, and no longer directly numerically calculates the electrolyte flow, pressure and velocity field in the target electroplating system, but uses a secondary current distribution model as a basic electrochemical solving framework. In the secondary current distribution model, the local current density at each position can be obtained by solving the potential distribution and current distribution on the electrode surface, combined with the polarization curve and electrochemical kinetics equation, so as to deduce the metal deposition rate and thickness distribution. In order to introduce the influence of electrolyte flow and mass transfer conditions on electroplating behavior without explicitly solving the flow field, the present application constructs a set of target spatial distribution functions based on geometric parameters and preset parameters, etc., to adjust the equilibrium potential and exchange current density of the cathode surface of the target panel structure at different positions.
[0036] Further, the target spatial distribution function can be:
[0037]
[0038] Wherein the width direction of the target panel structure is denoted as X direction and Y direction which are perpendicular to each other, the equilibrium potential is denoted as , and the reference maximum value is denoted as , the depletion factor along the flow direction of electrolyte is denoted as ; the amplitude of the potential enhancement effect caused by the baffle in the fluid guiding component in the target electroplating system is denoted as , the characteristic width of the effect in the X direction is denoted as , the cut-off coordinate and the transition width in the direction are denoted as ; the amplitude of the potential boosting in the platform region is denoted as , the characteristic width of the region in the X direction is denoted as , the start and end coordinates and the transition parameter in the Y direction are denoted as ; the critical ratio, the local state ratio and the transition width related to the dynamic coupling are denoted as . The exchange current density is denoted as , the reference maximum value is denoted as , and the depletion factor is denoted as ; the depth of the local inhibition effect is denoted as , the characteristic widths in the X and Y directions are denoted as , the inhibition center Y coordinate is denoted as ; the base boosting value and the additional dynamic boosting value of the platform region to the exchange current density are denoted as and The general geometric parameters include: any coordinate on the target panel structure the target panel structure center X coordinate , the target panel structure top Y coordinate is , and the cathode Y direction length . The smoothing function is denoted as and
[0039] It should be understood that the equilibrium potential is a thermodynamic concept. It refers to the potential difference at the electrode / electrolyte interface without external voltage and without net current flowing through. At this potential, the rate of metal dissolution is completely equal to the rate of metal deposition In this embodiment, the change of the equilibrium potential caused by the decrease of copper ion concentration is simulated to indirectly reflect the flow depletion effect.
[0040] Exchange current density is a kinetic concept. It describes the true rate at which both metal dissolution and deposition reactions proceed in both directions under equilibrium conditions. Even if the macroscopic net current is zero, there is still a huge current flowing in both directions microscopically, It is the magnitude of this flow. This scheme reflects the flow consumption effect by simulating the slowing down of reaction kinetics due to the decrease in the concentration of additive ions.
[0041] That is, in the embodiment, the above-mentioned basic distribution trend is analyzed and processed in zones in combination with the geometric layout of the central region, the edge region and the region along the main flow direction of the actual electrolyte of the target panel structure and the target process requirements, and a set of target spatial distribution functions is obtained through pre-setting or fitting, which is used to impose position-related corrections on the electrochemical parameters of different regions of the target panel structure. Specifically, the cathode surface of the target panel structure can be divided into several regions including the central region, the edge region and the specific flow direction region, and the corresponding spatial weight coefficients or correction factors are determined at different region positions of each target panel structure, so that the equilibrium potential and the equilibrium exchange current density at different positions of the cathode surface under the same process conditions present a non-uniform distribution modulated by the spatial distribution function. The non-uniform distribution is macroscopically equivalent to the mass transfer enhancement difference and local polarization difference caused by the electrolyte flow, which can effectively simulate the fluid effect without explicit fluid field solving.
[0042] That is, in the embodiment, the spatial distribution function is obtained through the geometric parameters of the target panel structure and the preset parameters of the target electroplating system, and the spatial distribution function can equivalently simulate the influence of the electrolyte flow in the target electroplating system on the electroplating process at any position of the target panel structure.
[0043] Step S13, performing simulation calculation based on the target global simulation model to determine the target simulation thickness cloud of the target panel structure.
[0044] Please refer to Figures 2-4 , Figure 2 is the global actually measured thickness cloud of the surface of the target panel structure after applying uniform current density to the target panel structure, Figure 3 is the simulation thickness cloud of the surface of the target panel structure obtained without using the target spatial distribution function, Figure 4 is the simulation thickness cloud of the surface of the target panel structure obtained by the panel-level electroplating simulation method of the embodiment; it can be seen that the prediction accuracy of the target simulation thickness cloud obtained by the panel-level electroplating simulation method based on the target global simulation model including the target spatial distribution function in the embodiment is higher.
[0045] Thus, by the method in the embodiment, a small amount of position-related parameter calculation can be added in the current distribution solving process, without the need to construct a large-scale three-dimensional fluid grid or perform multi-physics field coupling solving, thereby significantly reducing the calculation scale and memory occupation; at the same time, since the spatial distribution function is constructed and fitted based on the basic distribution trend obtained under the condition of uniform current density of the anode, the current density and plating layer thickness distribution prediction accuracy close to that of the traditional method containing fluid simulation can still be obtained under the condition of limited computing resources, and the trade-off between "high accuracy" and "low resource consumption" in large-area electroplating simulation is achieved.
[0046] In a possible implementation, before step S11, the method further includes: dividing a surface of the target panel structure into a plurality of target regions, and obtaining an opening ratio of each target region; wherein the opening ratio is a ratio of a sum of areas of patterns that need to be electroplated in each target region to a total area.
[0047] In the related art, for thousands of micro electroplating patterns distributed in an array on a large area of a target panel structure, directly drawing and solving all real micro patterns can cause the ECAD file of the target panel structure to have a complex format and a large amount of data when imported into simulation software, and is prone to recognition error or import failure; at the same time, when the grid is divided, the micro patterns on the cathode surface of each target panel structure need to be finely divided, and the number of grids increases explosively, causing the solving scale to be too large and the calculation time and storage resources to be unacceptable.
[0048] Therefore, in the embodiment, an opening ratio-based pattern equivalent processing scheme is proposed. The opening ratio-based pattern equivalent processing scheme is different from the method of equivalent cathode deposition area commonly used in the related art, and does not simplify the geometric model of the target panel structure by scaling or merging the cathode electroplating area, but divides the cathode surface of the target panel structure into a plurality of target regions, and then performs "outer frame equivalent processing" on the micro patterns that need to be electroplated in a small area range for each target region. Specifically, for a local region composed of a plurality of micro patterns, the application only retains the overall outer contour of the region, and represents the internal complex micro patterns with an equivalent region, so as to reduce the complexity of the geometric structure of the target panel structure. For example, please refer to Figures 5-6 , Figure 5 FIG. 2 is a local schematic diagram of a target region of a target panel structure, Figure 6 FIG. 3 is a simplified pattern of the target region obtained by the method of the embodiment.
[0049] Optionally, the size of each target region can be the same, so as to facilitate the grid division of the surface of the target panel structure and improve the data processing efficiency.
[0050] Optionally, the size of each target region can be different, so that the surface of the target panel structure can be divided in a targeted manner. For positions with more electroplating patterns, the size of the target region is designed to be small; for positions with fewer electroplating patterns, the size of the target region can be designed to be large.
[0051] Step S11 includes: obtaining the opening rate corresponding to each of the plurality of target regions, the physical size and the overall shape of the target panel structure.
[0052] In this embodiment, the target global simulation model based on the target spatial distribution function can be obtained based on the opening rates corresponding to the plurality of target regions, so as to improve the accuracy of simulation calculation.
[0053] Further, step S12 includes the following sub-steps.
[0054] Step S121 includes: determining a correction coefficient corresponding to each of the target regions.
[0055] Step S122 includes: establishing the target global simulation model of the target panel structure based on the correction coefficient, the geometric parameter and the preset parameter.
[0056] In this embodiment, after obtaining the equivalent regions of the target regions, the exchange current density of the surface of each equivalent region is weighted or corrected according to the opening rate corresponding to the equivalent region, so that the influence of the local small pattern on the electrochemical reaction rate and the deposition behavior can still be reflected in the macroscopic geometric scale. By applying the opening rate to the exchange current density instead of simply equivalent to the cathode deposition area, the method in the present application can more accurately reflect the influence of the small pattern density, shape and distribution on the local electrochemical reaction strength while keeping the geometric parameter of the overall target panel structure simple. Compared with the equivalent method of directly using the cathode electroplating area in the related art, the present application not only reduces the complexity of geometric modeling and mesh division of the target panel structure, reduces the number of meshes and the calculation scale, but also avoids the simulation error caused by the too rough equivalent of the cathode area of the target panel structure, and improves the calculation accuracy of the panel-level electroplating simulation.
[0057] In a possible implementation, please refer to Figure 7 After step S13, the method further includes the following steps.
[0058] Step S14 includes: establishing a local simulation sub-model of the target panel structure based on the geometric parameter and the preset parameter corresponding to each of the target regions.
[0059] Step S15 includes: performing simulation calculation based on the local simulation sub-model corresponding to each of the target regions to determine a target simulation thickness sub-cloud picture of the target region.
[0060] In the present embodiment, after the completion of the panel-level overall equivalent simulation and the acquisition of the global potential distribution, the current density distribution and the thickness distribution, a local simulation sub-model can be established according to the simulation results, in which a target region with a larger thickness gradient or higher process concern is selected. In the local simulation sub-model, the real micro-pattern of the target region is re-imported, the target region is divided into a plurality of smaller regions, and more refined boundary conditions are adopted. The global current density distribution data obtained in the foregoing step can be used as the boundary condition of the local simulation sub-model, so that the two-level simulation process of the overall target panel structure equivalent simulation and the local real pattern fine simulation can be realized.
[0061] The method in the present embodiment can ensure the accuracy of the panel-level distribution trend and obtain high-precision simulation results based on real micro-patterns in key regions under the premise of controlling the overall solution size and computing resources.
[0062] For example, please refer to Figures 8-9 , Figure 8 the simulation thickness cloud chart of the simplified pattern of the target region obtained by the panel-level electroplating simulation method of the present embodiment, Figure 9 the simulation thickness sub-cloud chart of the target region obtained by the panel-level electroplating simulation method of the present embodiment.
[0063] In a possible implementation, the target electroplating system includes an electroplating tank and an anode component and a fluid guide component located in the electroplating tank, wherein the anode component is arranged opposite to the target panel structure.
[0064] It should be understood that the target electroplating system further includes a power supply control system for providing driving boundary conditions to realize the calculation of the global current density distribution data in the simulation process, thereby providing a data basis for subsequent accurate simulation.
[0065] It should be understood that in the electroplating process, the cathode refers to the target panel structure that needs to be processed, which is connected to the negative electrode of the power supply, and the positively charged metal ions (such as copper ions) obtain electrons here, are reduced into metal atoms and deposited on the lines or through holes on the surface of the target panel structure. The final goal of the electroplating simulation in the present application is to predict the thickness distribution of the plated layer on the surface of the target panel structure.
[0066] The preset parameters include the geometric model data of the target electroplating system, the physical property parameters and reaction kinetics parameters of the electrochemical system, and the operation parameters and boundary conditions of the electroplating process.
[0067] The geometry model data of the target electroplating system includes geometry of the anode component, size and position data of the anode component relative to the target panel structure, and geometry of the fluid guiding component in the electroplating tank and position data of the fluid guiding component relative to the target panel structure; the physical property parameters and reaction kinetics parameters of the electrochemical system include concentration and conductivity of each component of the electroplating solution; and the operation parameters and boundary conditions of the electroplating process include set time, set flow and fluid characteristic parameters of the electrolyte.
[0068] In the embodiment, the anode is usually made of soluble metal (such as phosphor copper ball) or inert material, used for completing the circuit loop and supplementing or balancing metal ions in the electrolyte, and in the global simulation model of the application, the anode is used to provide current input; the electrolyte in the electroplating process is a conductive solution containing metal salt, acid, additive and other components, and the conductivity, diffusion coefficient, viscosity and the like are key preset parameters; the fluid guiding component is mainly used for guiding, disturbing and homogenizing the flow of the electrolyte; the target panel structure, the anode component, the electrolyte and the fluid guiding component are all located in the electroplating tank, and the electroplating tank defines the spatial range and boundary of the target electroplating system of the whole simulation.
[0069] Compared with the related art, in the application, the target space distribution function formed by the preset parameters, the geometry parameters and the possible empirical weights of the physical influence is used to process the global cathode current density distribution data to obtain the target simulation thickness cloud picture, so that not only the problems such as computer resource limitation and grid number explosion in the related art are effectively overcome, but also high-precision and high-efficiency simulation of the metal deposition thickness distribution of a large-area panel-level system is realized.
[0070] It should be noted that in addition to the preset parameters, the geometry parameters and the possible empirical weights of the physical influence mentioned in the embodiment, the target space distribution function can also be set in other ways, which is not limited here.
[0071] In a possible implementation, the step S13 includes the following sub-steps.
[0072] In step S131, simulation calculation is performed based on the target global simulation model to determine target global current density distribution data of the target panel structure.
[0073] In this step, the target global current density distribution data is the predicted current density distribution of the surface of the target panel structure obtained after simulation calculation.
[0074] In step S132, the target simulation thickness cloud picture is determined based on the target global current density distribution data.
[0075] It should be understood that the plating thickness at a point on the target panel structure is proportional to the product of the local current density at the point and the plating time. That is, in the same time, the plating thickness is high where the current density is high and the plating thickness is low where the current density is low. Therefore, in the embodiment, the target simulation thickness cloud map is determined based on the target global current density distribution data.
[0076] In a possible implementation, after step S13, the method further includes: determining the corrected geometric parameters and the preset parameters based on the target simulation thickness cloud map.
[0077] In the embodiment, after the target panel level plating simulation is completed, the geometric parameters of the target panel structure and the preset parameters of the target plating system can be optimized according to the obtained simulation thickness cloud map.
[0078] For example, if the overall one side of the target panel structure in the simulation thickness cloud map is thick, the layout of the anode component, the electrolyte flow field or the power supply parameter needs to be adjusted; if the problem is concentrated in at least one target area, the pattern layout and the density of the area need to be optimized.
[0079] Based on the same inventive concept, please refer to Figure 10 The application also provides a panel level plating simulation device 830, which includes a plurality of functional modules that can be stored in a machine readable storage medium 820 in the form of software. Functionally, the panel level plating simulation device 830 can include an acquisition module 831, a model construction module 832 and a determination module 833.
[0080] The acquisition module 831 is configured to acquire the geometric parameters of the target panel structure and the preset parameters of the target plating system.
[0081] In the embodiment, the acquisition module 831 can be configured to perform Figure 1 The specific description of the acquisition module 831 can be referred to the description of step S11.
[0082] The model construction module 832 is configured to establish a target global simulation model of the target panel structure based on the geometric parameters and the preset parameters; wherein the target global simulation model includes a target spatial distribution function, and the target spatial distribution function is configured to equivalently simulate the influence of the electrolyte flow in the target plating system on the plating process at any position of the target panel structure.
[0083] In the embodiment, the model construction module 832 can be configured to perform Figure 1 The specific description of the model construction module 832 can be referred to the description of step S12.
[0084] The determining module 833 is configured to determine a target simulation thickness cloud of the target panel structure based on the simulation calculation of the target global simulation model.
[0085] In this embodiment, the determining module 833 can be configured to perform Figure 1 The specific description of the determining module 833 can refer to the description of step S13.
[0086] The present application also provides a machine readable storage medium 820, which stores machine executable instructions, and the machine executable instructions, when executed by one or more processors 810, implement the panel-level electroplating simulation method according to any one of the preceding embodiments.
[0087] The present application also provides an electronic device 800, which can refer to Figure 11 , Figure 11 The block schematic diagram of an example electronic device 800. The electronic device 800 includes a processor 810, a machine readable storage medium 820 and a panel-level electroplating simulation apparatus 830. The machine readable storage medium 820 and the processor 810 are directly or indirectly electrically connected to each other to realize the transmission or interaction of data. For example, these elements can be electrically connected to each other through one or more communication buses or signal lines. The panel-level electroplating simulation apparatus 830 includes a plurality of software functional modules which can be stored in the machine readable storage medium 820 in the form of software or firmware or solidified in the operating system (OS) of the panel-level electroplating simulation apparatus 830. The processor 810 is configured to execute the executable modules stored in the machine readable storage medium 820, such as the software functional modules included in the panel-level electroplating simulation apparatus 830 and computer programs, etc. The electronic device 800 provided by the present application has a faster response speed, higher simulation accuracy and wider application range compared with other devices for panel-level electroplating simulation.
[0088] The machine readable storage medium 820 can be, but is not limited to, a random access memory (RAM), a read only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), etc. The machine readable storage medium 820 is configured to store programs, and the processor 810 executes the programs after receiving an execution instruction.
[0089] The processor 810 can be an integrated circuit chip with signal processing capability. The above-described processor 810 can be a general-purpose processor 810, including a central processing unit (CPU), a network processor (NP), or the like. The processor 810 can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), or other programmable logic device, discrete gate or transistor logic, discrete hardware components. Each method, step and logical block diagram in the embodiments of the present application can be implemented or executed by the processor 810. The general-purpose processor 810 can be a microprocessor or the processor 810 can also be any conventional processor. The processor 810 can be a combination of a microprocessor and a plurality of other components.
[0090] In summary, the present application provides a panel-level electroplating simulation method and device, and an electronic device 800. The method includes: obtaining geometric parameters of a target panel structure and preset parameters of a target electroplating system; based on the geometric parameters and the preset parameters, establishing a target global simulation model of the target panel structure; the target global simulation model includes a target spatial distribution function, and the target spatial distribution function is used to equivalently simulate the influence of electrolyte flow in the target electroplating system on the electroplating process at any position of the target panel structure; based on the target global simulation model, simulation calculation is performed to determine a target simulation thickness cloud picture of the target panel structure. The present application introduces fluid effects under the premise of not explicitly solving the fluid field by using a method based on secondary current distribution and combining spatial distribution functions, not only effectively overcomes the problems of computer resource limitation and grid number explosion in related technologies, but also realizes high-precision and high-efficiency simulation of the metal deposition thickness distribution of a large-area panel-level system.
[0091] It should be noted that, in this document, the terms such as first and second are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed or inherent to such a process, method, article or device. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of additional identical elements in the process, method, article or device including the element.
[0092] The above descriptions are only the preferred embodiments of the present application, and are not intended to limit the present application. The present application can have various modifications and changes for those skilled in the art. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A panel-level electroplating simulation method, characterized in that, include: Obtain the geometric parameters of the target panel structure and the preset parameters of the target electroplating system; Based on the geometric parameters and the preset parameters, a target global simulation model of the target panel structure is established; wherein, the target global simulation model includes a target spatial distribution function, which is used to equivalently simulate the influence of electrolyte flow in the target electroplating system on the electroplating process at any position of the target panel structure; Based on the target global simulation model, simulation calculations are performed to determine the target simulation thickness cloud map of the target panel structure.
2. The method according to claim 1, characterized in that, Before the step of obtaining the geometric parameters of the target panel structure and the preset parameters of the target electroplating system, the method further includes: dividing the surface of the target panel structure into multiple target regions and obtaining the aperture ratio of each target region; wherein, the aperture ratio is the ratio of the sum of the areas of the patterns to be electroplated in each target region to the total area; The step of obtaining the geometric parameters of the target panel structure includes: obtaining the aperture ratio, physical dimensions and overall shape of the target panel structure corresponding to multiple target regions.
3. The method according to claim 2, characterized in that, The step of establishing the target global simulation model of the target panel structure based on the geometric parameters and the preset parameters further includes: Determine the correction coefficient corresponding to each of the target regions; The target global simulation model of the target panel structure is established based on the correction coefficient, the geometric parameters, and the preset parameters.
4. The method according to claim 2, characterized in that, After the step of performing simulation calculations based on the target global simulation model to determine the target simulation thickness cloud map of the target panel structure, the method further includes: Based on the geometric parameters and preset parameters corresponding to each target region, a local simulation sub-model of the target panel structure is established; Simulation calculations are performed based on the local simulation sub-model corresponding to the target region to determine the target simulation thickness sub-cloud map of the target region.
5. The method according to claim 1, characterized in that, The target electroplating system includes an electroplating tank and an anode component and a fluid guiding component located within the electroplating tank, wherein the anode component is disposed opposite to the target panel structure; The preset parameters include the geometric model data of the target electroplating system, the physical properties and reaction kinetics parameters of the electrochemical system, and the operating parameters and boundary conditions of the electroplating process. The geometric model data of the target electroplating system includes the geometry, size, and position data of the anode component relative to the target panel structure, as well as the geometry and position data of the fluid guiding component within the electroplating tank relative to the target panel structure; the physical properties and reaction kinetics parameters of the electrochemical system include the concentration and conductivity of each component in the electroplating solution; the operating parameters and boundary conditions of the electroplating process include the set time, set flow rate, and fluid characteristic parameters of the electrolyte.
6. The method according to claim 1, characterized in that, The step of performing simulation calculations based on the target global simulation model to determine the target simulation thickness cloud map of the target panel structure includes: Simulation calculations are performed based on the target global simulation model to determine the target global current density distribution data of the target panel structure. Based on the target's global current density distribution data, the simulated thickness cloud map of the target is determined.
7. The method according to claim 1, characterized in that, After the step of performing simulation calculations based on the target global simulation model to determine the target simulation thickness cloud map of the target panel structure, the method further includes: The corrected geometric parameters and the preset parameters are determined based on the target simulation thickness contour map.
8. A panel-level electroplating simulation device, characterized in that, The device includes: The acquisition module is used to acquire the geometric parameters of the target panel structure and the preset parameters of the target electroplating system. The model building module is used to establish a target global simulation model of the target panel structure based on the geometric parameters and the preset parameters; wherein, the target global simulation model includes a target spatial distribution function, which is used to equivalently simulate the influence of electrolyte flow in the target electroplating system on the electroplating process at any position of the target panel structure; The determination module is used to perform simulation calculations based on the target global simulation model to determine the target simulation thickness cloud map of the target panel structure.
9. An electronic device, characterized in that, include: Storage medium used to store one or more programs; A processor, when one or more of the programs are executed by the processor, implements the method of any one of claims 1-7.
10. A machine-readable storage medium, characterized in that, The machine-readable storage medium stores machine-executable instructions that, when executed by a processor, implement the method described in any one of claims 1-7.