Control circuit and method based on embedded micro-ring photoelectric detector
By connecting the embedded micro-ring photodetector to the common port of the tuning device and the micro-ring device, the circuit design is optimized, solving the problems of additional coupling structure and area overhead in micro-ring wavelength control, and realizing efficient micro-ring wavelength control and multi-scenario adaptation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-18
- Publication Date
- 2026-03-27
AI Technical Summary
Existing micro-ring photodetectors suffer from problems such as additional coupling structures, numerous electrical pins, large area overhead, and difficulty in layout design, resulting in low wavelength control efficiency and difficulty in adapting to environmental changes and manufacturing process deviations.
An embedded micro-ring photodetector is designed, and by connecting it to the common port of the tuning device and the micro-ring device on the main output path of the micro-ring module, a common active area of the photonic device is formed. The circuit design is optimized to reduce the number of ports and area overhead, increase the effective waveguide length, and realize wavelength control in various working scenarios.
It improves the detection performance of micro-ring photodetectors, reduces packaging costs, enhances control and adaptability, supports wavelength control of micro-ring devices in various working scenarios, and has high optical integration and a wide range of applications.
Smart Images
Figure CN121750106A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of optical communication technology, and in particular to a control circuit and method based on an embedded micro-ring photodetector. Background Technology
[0002] With the development of information technologies such as big data, cloud computing, autonomous driving, and artificial intelligence, high-performance computing and high-performance interconnects are gradually moving from traditional integrated circuits to optoelectronic integration combined with integrated photonics. Microrings, as a basic photonic element, are widely used in various optoelectronic integration systems due to their unique resonant and filtering characteristics. In the information field, optical interconnect links composed of microrings have the advantages of high bandwidth, high density, and low power consumption, and are considered the most promising interconnect form for data centers.
[0003] The main obstacles to the practical application of microrings stem from their process sensitivity and environmental sensitivity. Manufacturing process deviations can lead to random distributions of the actual operating wavelength after the microring leaves the factory, while environmental changes, such as temperature, laser intensity, data rate, contamination, and aging, can cause dynamic changes in the microring's operating state. These non-ideals can reduce microring yield, degrade performance, and even cause device failure. To counteract and compensate for these non-ideals, it is necessary to systematically construct a control loop using optoelectronic fusion methods to control the wavelength of the microring. Currently, various microring control loops have been extensively studied, but a universally accepted and highly efficient control method has yet to emerge. Therefore, the microring wavelength control problem is a pressing issue that the industry urgently needs to address.
[0004] The wavelength control loop includes basic modules such as a photodetector module, a front-end detection module, a logic control module, and a feedback drive module. Among these, the photodetector module acts as a crucial bridge between the optical signal and the control circuit. However, conventional photodetectors suffer from drawbacks such as the need for additional coupling structures, numerous electrical pins, large area overhead, and difficulties in layout design. They also exhibit bottlenecks due to incompatibility with micro-ring devices in terms of optical structure, electrical connections, and control methods. Summary of the Invention
[0005] In view of this, the present invention proposes a control circuit and method based on an embedded micro-ring photodetector. By designing an embedded micro-ring photodetector and reconstructing its adapter circuit and control method, an efficient and systematic solution for realizing micro-ring wavelength control is provided. It can efficiently control the resonant wavelength of various micro-rings in various application scenarios and has the advantages of high optical integration, low packaging overhead, strong control capability, strong adaptability, and wide application range.
[0006] In a first aspect, the present invention provides a control circuit based on an embedded microring photodetector, comprising a microring module, a front-end module, a control module, and a tuning drive module. The microring module includes an embedded microring photodetector, a tuning device, and at least one microring device. The output terminals of the embedded microring photodetector, the tuning device, and the microring device are connected to the main output path of the microring module, which serves as the output terminal of the microring module. The micro-ring module is used to detect the light intensity inside the embedded micro-ring photodetector and obtain the light signal; The front-end module is used to amplify the optical signal to obtain a monitoring signal; The control module is used to perform logic control based on the monitoring signal to obtain the tuning signal. The circuit used for logic control is a digital circuit or an analog circuit. The tuning drive module is used to adjust the operating wavelength of the embedded micro-ring photodetector according to the tuning signal. By connecting the common port of the embedded micro-ring photodetector, tuning device, and micro-ring device to the main output circuit of the micro-ring module, a common active region of photonic devices is formed. This achieves the goals of increasing the effective waveguide length of the active region, improving detection performance, reducing the number of ports, reducing area overhead, and optimizing the layout. The common port refers to the port with the same potential among the embedded micro-ring photodetector, tuning device, and micro-ring device. This control circuit can simultaneously support the main function of the micro-ring device itself and the detection function of the embedded micro-ring photodetector, realizing wavelength control of various micro-ring devices under various working scenarios.
[0007] Based on the above technical solutions, preferably, the embedded micro-ring photodetector includes a first waveguide and a first PN junction, wherein the first PN junction is located inside the first waveguide.
[0008] Based on the above technical solutions, preferably, the micro-ring device includes a second waveguide and a second PN junction.
[0009] Based on the above technical solutions, preferably, the PN junction includes a P-type doped region and an N-type doped region.
[0010] Based on the above technical solutions, preferably, the first PN junction and the second PN junction share a P-type doped region or an N-type doped region.
[0011] Based on the above technical solutions, preferably, the tuning device is located above, outside, inside, below or adjacent to the first waveguide and the second waveguide.
[0012] Based on the above technical solutions, preferably, the embedded micro-ring photodetector embeds the first PN junction into the first waveguide and changes the bias voltage of the first PN junction to construct a space charge region, forming a PIN junction, thereby achieving the purpose of detecting the intensity of the resonant wavelength light within the micro-ring.
[0013] Based on the above technical solutions, preferably, a first current exists in the PIN junction when there is no optical signal in the first waveguide.
[0014] Based on the above technical solutions, preferably, when there is an optical signal in the first waveguide, there is a second current in the PIN junction.
[0015] Based on the above technical solutions, preferably, the magnitude of the first current is smaller than that of the second current.
[0016] Based on the above technical solutions, preferably, the magnitude of the second current is proportional to the intensity of the optical signal in the first waveguide, and the ratio is the responsivity of the embedded micro-ring photodetector.
[0017] Based on the above technical solutions, preferably, the first waveguide and the second waveguide are strip waveguides or ridge waveguides.
[0018] Based on the above technical solutions, preferably, the output terminal of the micro-ring module is connected to the ground wire or power supply, the first input terminal of the micro-ring module is connected to the input terminal of the front-end module; the output terminal of the front-end module is connected to the input terminal of the control module, the output terminal of the control module is connected to the input terminal of the tuning drive module, and the output terminal of the tuning drive module is connected to the second input terminal of the micro-ring module.
[0019] Secondly, the present invention also provides a control method based on an embedded micro-ring photodetector, the method comprising: The optical signal is obtained by detecting the light intensity inside the embedded micro-ring photodetector using a micro-ring module; The optical signal is sent to the front-end module, amplified, and a monitoring signal is obtained. The monitoring signal is sent to the control module for logic control to obtain the tuning signal; The tuning signal is sent to the tuning drive module, and the operating wavelength of the embedded micro-ring photodetector is adjusted according to the tuning signal. By connecting the common port of the embedded micro-ring photodetector, tuning device, and micro-ring device to the main output circuit of the micro-ring module, a common active region of photonic devices is formed. This achieves the goals of increasing the effective waveguide length of the active region, improving detection performance, reducing the number of ports, reducing area overhead, and optimizing the layout. The common port refers to the port with the same potential among the embedded micro-ring photodetector, tuning device, and micro-ring device. This control circuit can simultaneously support the main function of the micro-ring device itself and the detection function of the embedded micro-ring photodetector, realizing wavelength control of various micro-ring devices under various working scenarios.
[0020] The control circuit based on an embedded micro-ring photodetector provided by this invention has the following advantages over the prior art: (1) By embedding the PN junction into the waveguide to construct the embedded micro-ring photodetector, the need for additional coupling structures in general photodetectors is reduced; by reconstructing the design of the adapter circuit of the embedded micro-ring photodetector and other active structures of the micro-ring, such as the modulation area and sensing area, by merging the ports, the electrical pin and area overhead of the photodetector are reduced, providing a more effective systematic solution for realizing micro-ring wavelength control.
[0021] (2) By connecting the common port of the embedded micro-ring photodetector, tuning device and micro-ring device to the output main line of the micro-ring module, a common active area of photonic devices is formed, which can increase the effective waveguide length of the active area, improve the detection performance, reduce the number of ports, reduce the area overhead and optimize the layout. It can simultaneously support the main function of the micro-ring device itself, the detector detection function, the tuning function and other supplementary functions, and realize the wavelength control of various micro-ring devices in various working scenarios.
[0022] (3) By designing an embedded micro-ring photodetector and reconstructing its adapter circuit and control method, an efficient and systematic solution for realizing micro-ring wavelength control is provided. It can efficiently control the resonant wavelength of various micro-rings in various application scenarios. It has the advantages of high optical integration, low packaging overhead, strong control capability, strong adaptability, and wide application range. Attached Figure Description
[0023] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0024] Figure 1 A schematic diagram of the control circuit based on an embedded micro-ring photodetector provided by the present invention; Figure 2 This is a schematic diagram of the embedded micro-ring photodetector provided in the embodiments of this application; Figure 3 This is a schematic cross-sectional view of the embedded micro-ring photodetector provided in the embodiments of this application; Figure 4 This is a comparative layout of the optical chip after adopting common doping and adapter circuitry provided in the embodiments of this application; Figure 5 This is a schematic diagram of the commonly doped embedded micro-ring photodetector and its adapter circuit in the micro-ring transmitter provided in the embodiments of this application; Figure 6 This is a schematic diagram of the commonly doped embedded micro-ring photodetector and its adapter circuit in the micro-ring receiver provided in the embodiments of this application; Figure 7 This is a schematic diagram of the embedded micro-ring photodetector and its control circuit in the micro-ring filter provided in the embodiments of this application; Figure 8 This is a schematic diagram of the embedded micro-ring photodetector and its control circuit in the micro-ring modulator provided in the embodiments of this application; Figure 9 This is a schematic diagram of the embedded micro-ring photodetector and its control circuit in the micro-ring photoconverter provided in the embodiments of this application; Figure 10 A schematic diagram of the wavelength control circuit for a multi-channel micro-ring modulator and an embedded micro-ring photodetector in a wavelength division multiplexing scenario provided in this application embodiment; Figure 11 A schematic diagram of the wavelength control circuit for the high-order microring filter and embedded microring photodetector provided in the embodiments of this application; Figure 12 This is a flowchart illustrating the control method based on an embedded micro-ring photodetector provided by the present invention.
[0025] Figure reference numerals: 1. Micro-ring module; 2. Front-end module; 3. Control module; 4. Tuning drive module; 11. Embedded micro-ring photodetector; P1. First P-type doped structure; P2. Second P-type doped structure; P3. Third P-type doped structure; P4. Fourth P-type doped structure; P5. Fifth P-type doped structure; P6. Sixth P-type doped structure; P7. Seventh P-type doped structure; N1. First N-type doped structure; N2. Second N-type doped structure; N3. Third N-type doped structure; N4. Fourth N-type doped structure; N5. Fifth N-type doped structure; N6. Sixth N-type doped structure; SPACE. Minimum spacing of active region; SPACE1. Minimum spacing of pad package; PAD. Pad. Detailed Implementation
[0026] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.
[0027] Unless otherwise defined, the technical or scientific terms used in this invention shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "an" or "a" and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "connected" or "linked" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up," "down," "left," "right," etc., are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship also changes accordingly.
[0028] like Figure 1 As shown, this invention provides a control circuit based on an embedded micro-ring photodetector, including a micro-ring module 1, a front-end module 2, a control module 3, and a tuning drive module 4. The micro-ring module 1 includes an embedded micro-ring photodetector 11, a tuning device 12, and at least one micro-ring device 13. The output terminals of the embedded micro-ring photodetector 11, the tuning device 12, and the micro-ring device 13 are connected to the main output path of the micro-ring module 1. The main output path of the micro-ring module 1 serves as the output terminal of the micro-ring module 1. The micro-ring module 1 is used to detect the light intensity inside the embedded micro-ring photodetector 11 and obtain the light signal; The front-end module 2 is used to amplify the optical signal to obtain a monitoring signal; The control module 3 is used to perform logic control based on the monitoring signal to obtain the tuning signal. The circuit used for logic control is a digital circuit or an analog circuit. The tuning drive module 4 is used to adjust the operating wavelength of the embedded micro-ring photodetector 11 according to the tuning signal. By connecting the common port of the embedded micro-ring photodetector 11, the tuning device 12, and the micro-ring device 13 to the main output circuit of the micro-ring module 1, a common active region of photonic devices is formed. This achieves the purpose of increasing the effective waveguide length of the active region, improving detection performance, reducing the number of ports, reducing area overhead, and optimizing the layout. The common port is the port with the same potential among the embedded micro-ring photodetector 11, the tuning device 12, and the micro-ring device 13. This control circuit can simultaneously support the main function of the micro-ring device 13 itself and the detection function of the embedded micro-ring photodetector 11, realizing wavelength control of various micro-ring devices 13 under various working scenarios.
[0029] It's easy to understand that a common port refers to a port that has the same potential in different modules. In circuit design, it's necessary to design some ports of different modules to have the same potential; in physical fabrication, these ports need to be merged in a way that uses a common active region.
[0030] In some implementations, the output terminal of the micro-ring module 1 is connected to the ground wire or power supply, the first input terminal of the micro-ring module 1 is connected to the input terminal of the front-end module; the output terminal of the front-end module 2 is connected to the input terminal of the control module 3, the output terminal of the control module 3 is connected to the input terminal of the tuning drive module 4, and the output terminal of the tuning drive module 4 is connected to the second input terminal of the micro-ring module 1.
[0031] In some embodiments, the control circuit further includes a first conversion module and a second conversion module. The output terminal of the micro-ring module 1 is connected to ground or power supply. The first input terminal of the micro-ring module 1 is connected to the input terminal of the front-end module 2. The output terminal of the front-end module 2 is connected to the input terminal of the first conversion module. The output terminal of the first conversion module is connected to the input terminal of the control module 3. The output terminal of the control module 3 is connected to the input terminal of the second conversion module. The output terminal of the second conversion module is connected to the input terminal of the tuning drive module 4. The output terminal of the tuning drive module 4 is connected to the second input terminal of the micro-ring module 1. For example, the control circuit first detects the internal light intensity of the embedded micro-ring photodetector 11 through the micro-ring module 1. The required monitoring signal is amplified by the front-end module 2. Then, the monitoring signal is converted from an analog signal to a processable digital signal through the first conversion module. After digital processing by the control module 3, a tuning signal is output. Then, the tuning signal is converted from a digital signal to a tunable analog signal through the second conversion module. Finally, the precise control of the micro-ring's operating wavelength is completed on the tuning drive module 4. This control circuit can support wavelength control of various micro-ring devices in various working scenarios.
[0032] For example, the tuning drive module 4 includes a thermo-optical tuning drive module and an electro-optical tuning drive module.
[0033] In some embodiments, the embedded microring photodetector 11 includes a first waveguide 111 and a first PN junction, the first PN junction being located inside the first waveguide 111. The embedded microring photodetector 11 forms a PIN junction by embedding the first PN junction into the first waveguide 111 and changing the bias voltage of the first PN junction to construct a space charge region. This allows it to detect the intensity of resonant wavelength light within the microring without affecting the main function of the first waveguide 111.
[0034] In some embodiments, when there is no optical signal in the first waveguide 111, a first current exists in the PIN junction. When there is an optical signal in the first waveguide 111, a second current exists in the PIN junction. The magnitude of the first current is smaller than the second current. The magnitude of the second current is proportional to the intensity of the optical signal in the first waveguide 111, and the ratio is the responsivity of the embedded microring photodetector 11.
[0035] In some embodiments, the PN junction includes a P-type doped region and an N-type doped region.
[0036] Figure 2 This is a schematic diagram of the embedded micro-ring photodetector provided in the embodiments of this application, as shown below. Figure 2 As shown, in Figure 2 In Figure (a), P1 is the first P-type doped structure, N1 is the first N-type doped structure, N2 is the second N-type doped structure, and P1 is the common P-type doped structure. The embedded micro-ring photodetector 11 includes P1 and N2. Figure 2 In Figure (b), P2 is the second P-type doped structure, P3 is the third P-type doped structure, N3 is the third N-type doped structure, and N3 is the common N-type doped structure. The embedded micro-ring photodetector 11 includes P3 and N3. Figure 2 In Figure (c), N4 is the fourth N-type doped structure, N5 is the fifth N-type doped structure, N6 is the sixth N-type doped structure, and P4 is the fourth P-type doped structure. The embedded micro-ring photodetector 11 includes P4 and N5. Figure 2 In Figure (d), N6 is the sixth N-type doped structure, P5 is the fifth P-type doped structure, P6 is the sixth P-type doped structure, and P7 is the seventh P-type doped structure. The embedded micro-ring photodetector 11 includes P6 and N6.
[0037] In some embodiments, the microring device 13 includes a second waveguide 112 and a second PN junction. The first PN junction and the second PN junction share a P-type doped region or an N-type doped region. The tuning device 12 is located above, outside, inside, below, or adjacent to the first waveguide 111 and the second waveguide 112.
[0038] It should be noted that the embedded microring photodetector 11 can be designed with common doping with the microring device 13 to achieve port merging functionality. Figure 2 Figure (a) and Figure 2 Figure (c) in the diagram is a schematic diagram of the common P-type area. Figure 2 Figure (b) in the middle and Figure 2 Figure (d) in the diagram is a schematic diagram of the common N-type region. Figure 2 In Figure (a), the micro-ring device 13 includes N1 and P1. Figure 2 In Figure (b), the micro-ring device 13 includes N3 and P2. Figure 2 In Figure (c), there are two micro-ring devices 13. The first micro-ring device 13 includes N4 and P4, and the second micro-ring device 13 includes N6 and P4.
[0039] An embedded microring photodetector can be embedded within a segmented microring device 13, such as... Figure 2 Figure (a) and Figure 2 Figure (b) can also be embedded within a multi-segment micro-ring device 13, such as... Figure 2 Figure (c) in the middle and Figure 2 The position and scale of diagram (d) in the diagram can be designed arbitrarily without distinction.
[0040] In some embodiments, the first waveguide 111 and the second waveguide 112 are strip waveguides or ridge waveguides.
[0041] Figure 3 This is a schematic cross-sectional view of the embedded micro-ring photodetector provided in an embodiment of this application, where 111 represents the first waveguide. Figure 3 In (a), the PN and PIN junctions in the strip waveguide structure are shown without distinguishing the position and proportion of P-type and N-type doping. Figure 3 (b) is a schematic diagram of the PN junction and PIN structure in the ridge waveguide structure, without distinguishing the position and proportion of P-type doping and N-type doping.
[0042] In some embodiments, the adapter circuit for the embedded microring photodetector 11 refers to the collaborative design of the main functional circuits such as the transmitting circuit, receiving circuit, driving circuit, detection circuit, and filtering circuit with the detection circuit of the embedded microring photodetector 11 through port merging. This satisfies the design requirements of the common active area of the photonic device, thereby increasing the effective waveguide length of the active area, reducing electrical pins, reducing area overhead, and optimizing the layout design. This adapter circuit can simultaneously support the main functions of the microring waveguide itself and the detection function of the embedded microring photodetector.
[0043] Figure 4 This is a comparative layout of the optical chip after adopting common doping and adapter circuitry, provided in the embodiments of this application. Figure 4(a) shows the optical chip layout after using common doping and adapter circuitry. The optical chip layout without common doping and adapter circuitry is shown in Figure 1. Figure 4 As shown in (b) above, SPACE represents the minimum spacing requirement for the active region. It can be seen that the minimum spacing for common doping is on the outside of the microring, while the minimum spacing for non-common doping is on the inside of the microring. Therefore, the utilization rate of the ring waveguide after using common doping will be greatly improved. SPACE1 represents the minimum spacing requirement for the pad package. PAD represents the pad used for external connection of electrical leads. It can be seen that using common doping and adapter circuitry will reduce the number of pins by one-quarter, and the pad area can be saved by more than one-quarter. This is beneficial for improving the integration of optical devices, reducing area overhead, and lowering packaging costs.
[0044] Taking the micro-ring device 13 as an example of a micro-ring transmitter, Figure 5 This is a schematic diagram of the commonly doped embedded micro-ring photodetector and its adapter circuit in the micro-ring transmitter provided in this application embodiment, as shown below. Figure 5 As shown, Figure 5 Figure (a) shows the transmitter of the common P-type region. The first P-type region P500 and the first N-type region N500 constitute the embedded micro-ring photodetector 11. The first P-type region P500 and the second N-type region N501 constitute the micro-ring modulator MOD. Figure 5 Figure (b) shows the transmitter adapter circuit diagram for the common P-type region. The common P-type region of the embedded micro-ring photodetector 11 and the micro-ring modulator MOD is connected to the common GND. The first N-type region bias voltage of the embedded micro-ring photodetector 11 is provided by the analog front-end AFE. The photocurrent of the embedded micro-ring photodetector 11 is converted into the detection voltage Vmonitor after passing through the AFE. The second N-type region bias voltage of the micro-ring modulator MOD is provided by Vbias after being filtered by the inductor L. The signal source of the micro-ring modulator MOD is provided by the signal voltage Vdata through the driver DRV and the capacitor C.
[0045] Figure 5 Figure (c) shows the transmitter of the common N-type region. The second P-type region P510 and the third N-type region N510 constitute the embedded micro-ring photodetector 11. The third P-type region P511 and the third N-type region N510 constitute the micro-ring modulator MOD. Figure 5Figure (d) shows the transmitter adapter circuit diagram for the common N-type region. The common N-type region of the embedded micro-ring photodetector 11 and the micro-ring modulator MOD is connected to the common power supply voltage VCC. The bias voltage of the second P-type region of the embedded micro-ring photodetector 11 is provided by the analog front end AFE. The photocurrent of the embedded micro-ring photodetector 11 is converted into the detection voltage Vmonitor after passing through the AFE. The bias voltage of the third P-type region of the micro-ring modulator MOD is provided by Vbias after being filtered by inductor L. The signal source of the micro-ring modulator MOD is provided by Vdata through the driver DRV and capacitor C.
[0046] Taking the micro-ring device 13 as an example of a micro-ring receiver, Figure 6 This is a schematic diagram of the commonly doped embedded micro-ring photodetector and its adapter circuit in the micro-ring receiver provided in the embodiments of this application, as shown below. Figure 6 As shown, Figure 6 Figure (a) shows the receiver with a common P-type region. The fourth P-type region P600 and the fourth N-type region N600 constitute an embedded micro-ring photodetector 11. The fourth P-type region P600 and the fifth N-type region N601 constitute a micro-ring photoconverter PD. Figure 6 Figure (b) shows the receiver adapter circuit diagram for the common P-type region. The common P-type region of the embedded micro-ring photodetector 11 and the micro-ring photoconverter PD is connected to the common GND. The bias voltage of the fourth N-type region of the embedded micro-ring photodetector 11 is provided by the analog front-end AFE. The photocurrent of the embedded micro-ring photodetector 11 is converted into the detection voltage Vmonitor after passing through the AFE. The bias voltage of the fifth N-type region of the micro-ring photoconverter PD is provided by the analog front-end AFE. After the micro-ring photoconverter PD converts the optical signal into a current signal, it is output as Vdata by the AFE.
[0047] Figure 6 Figure (c) shows the receiver of the common N-type region. The fifth P-type region P610 and the sixth N-type region N610 constitute the embedded micro-ring photodetector 11. The sixth P-type region P611 and the sixth N-type region N610 constitute the micro-ring photoconverter PD. Figure 6 Figure (d) shows the receiver adapter circuit diagram for the common N-type region. The common N-type regions of the embedded micro-ring photodetector 11 and the micro-ring photoconverter PD are connected to the common VCC. The bias voltage of the P-type region of the embedded micro-ring photodetector 11 is provided by the analog front-end AFE. The photocurrent of the embedded micro-ring photodetector 11 is converted into the detection voltage Vmonitor after passing through the AFE. The bias voltage of the P-type region of the micro-ring photoconverter PD is provided by the analog front-end AFE. After the micro-ring photoconverter PD converts the optical signal into a current signal, it is output as Vdata by the AFE.
[0048] It is easy to understand that the control circuit of the embedded micro-ring photodetector refers to the combination of conversion module, control module, tuning drive module and adapter circuit to build micro-ring resonant wavelength control circuit in the form of closed loop feedback, which can support the wavelength control architecture of various micro-ring devices in various working scenarios.
[0049] Taking micro-ring device 13 as an example of a micro-ring filter, Figure 7 This is a schematic diagram of the embedded micro-ring photodetector and its control circuit in the micro-ring filter provided in this application embodiment, as shown below. Figure 7 As shown, Figure 7 Figure (a) shows a planar schematic of the microring filter. The microring filter FILTER includes a straight waveguide S and a ring waveguide R. The embedded microring photodetector 11 includes a seventh P-type region P700 and a seventh N-type region N700. The thermo-optical tuner HT is placed in the microring filter to change the waveguide temperature.
[0050] Figure 7 Figure (b) shows the micro-ring filter along... Figure 7 The cross-sectional view of the dashed line in Figure (a) shows that the ring waveguide R, the seventh P-type region P700, and the seventh N-type region N700 are located at the same level, while the thermo-optical tuner HT is located at other levels.
[0051] Figure 7 Figure (c) shows the control circuit diagram of the micro-ring filter. The embedded micro-ring photodetector 11 and HT are connected in a port-merged manner. The bias voltage of the embedded micro-ring photodetector 11 is provided by the analog front-end AFE. The embedded micro-ring photodetector 11 inputs the detected photocurrent into the AFE to generate an analog signal. The analog-to-digital converter AD converts the analog signal into a digital signal. The microprocessor M receives the digital signal, processes it logically, and outputs a hot-tuned voltage data. The digital-to-analog converter DA converts the hot-tuned voltage data into a hot-tuned voltage. The hot-tuned voltage is loaded into HT through the buffer drive stage BUF. The above process is repeated to finally complete the wavelength control of the micro-ring filter.
[0052] Taking the micro-ring device 13 as an example of a micro-ring modulator, Figure 8 This is a schematic diagram of the embedded micro-ring photodetector and its control circuit in the micro-ring modulator provided in the embodiments of this application, as shown below. Figure 8 As shown, Figure 8 Figure (a) is a planar schematic diagram of the micro-ring modulator. The micro-ring modulator MOD includes a straight waveguide S, a ring waveguide R, an eighth P-type region P800 and an eighth N-type region N801. The embedded micro-ring photodetector 11 includes an eighth P-type region P800 and a ninth N-type region N801. The thermo-optical tuner HT is placed in the micro-ring filter to change the waveguide temperature.
[0053] Figure 8Figure (b) shows the micro-ring modulator along... Figure 8 In Figure (a), the cross-sectional view unfolded by the dashed line shows that waveguide R, the eighth P-type region P800, and the eighth N-type region N801 are at the same level, while the thermo-optical tuner HT is located at other levels and is connected to the active region through a via.
[0054] Figure 8 Figure (c) shows the control circuit diagram of the micro-ring modulator. The micro-ring modulator MOD, the embedded micro-ring photodetector 11, and the thermo-optical tuner HT are connected in a port-merged manner. The modulation signal Vdata is loaded onto the micro-ring modulator MOD through the driver DRV and capacitor C. The bias voltage of the embedded micro-ring photodetector 11 is provided by the analog front-end AFE. The embedded micro-ring photodetector 11 inputs the detected photocurrent into the AFE to generate an analog signal. The analog-to-digital converter AD converts the analog signal into a digital signal. The microprocessor M receives the digital signal, processes it logically, and outputs a thermally modulated voltage data and an electrically modulated voltage data. The digital-to-analog converter DA converts the thermally modulated voltage data into a thermally modulated voltage. The thermally modulated voltage is loaded onto the thermo-optical tuner HT through the buffer driver stage BUF. The digital-to-analog converter DA converts the electrically modulated voltage data into an electrically modulated voltage. The electrically modulated voltage is loaded onto the bias terminal of the micro-ring modulator MOD through the buffer driver stage BUF and inductor L. The above process is repeated to finally complete the wavelength control of the micro-ring modulator.
[0055] Taking the micro-ring device 13 as an example of a micro-ring photoelectric converter, Figure 9 This is a schematic diagram of the embedded micro-ring photodetector and its control circuit in the micro-ring photoconverter provided in the embodiments of this application, as shown below. Figure 9 As shown, Figure 9 Figure (a) shows a planar schematic diagram of the micro-ring photoelectric converter PD, which includes a straight waveguide S, a ring waveguide R, a ninth P-type region P900 and a tenth N-type region N901. The embedded micro-ring photodetector 11 includes a ninth P-type region P900 and an eleventh N-type region N901. The thermo-optical tuning HT is placed in the micro-ring filter to change the waveguide temperature.
[0056] Figure 9 Figure (b) shows the micro-ring photoelectric converter along... Figure 9 In Figure (a), the cross-sectional view unfolded by the dashed line shows that the ring waveguide R, the ninth P-type region P900, and the tenth N-type region N901 are at the same level, while the thermo-optical tuner HT is located at other levels and is connected to the active region through a via.
[0057] Figure 9Figure (c) shows the control circuit diagram of the micro-ring photoconverter. The micro-ring photoconverter PD, the embedded micro-ring photodetector 11, and the thermo-optical tuner HT are connected in a port-merged manner. The bias voltage of the micro-ring photoconverter PD is provided by the analog front-end AFE. After the micro-ring photoconverter PD converts the optical signal into a current signal, it is output as Vdata by the AFE. The bias voltage of the embedded micro-ring photodetector 11 is provided by the analog front-end AFE. The embedded micro-ring photodetector 11 inputs the detected photocurrent into the AFE to generate an analog signal. The analog-to-digital converter AD converts the analog signal into a digital signal. The microprocessor M receives the digital signal, processes it logically, and outputs a thermo-tunable voltage data. The digital-to-analog converter DA converts the thermo-tunable voltage data into a thermo-tunable voltage. The thermo-tunable voltage is loaded onto the thermo-optical tuner HT through the buffer driver stage BUF. The above process is repeated to finally complete the wavelength control of the micro-ring modulator.
[0058] Figure 10 This is a schematic diagram of the wavelength control circuit for a multi-channel micro-ring modulator and an embedded micro-ring photodetector in a wavelength division multiplexing scenario, provided in an embodiment of this application. Figure 10 Figure (a) shows a plan view of the microring modulator, illustrating the design of a single microring and... Figure 8 (a) Figure 1 In this configuration, two or more microrings are connected in series on the same waveguide and operate at different wavelengths.
[0059] Figure 10 Figure (b) shows the closed-loop implementation of the control circuit, where the wavelength control of a single micro-loop is... Figure 8 (c) Figure 1 Thus, two or more microrings are controlled in an orderly closed-loop manner through the same control module 3, allowing different microrings to operate at different wavelengths.
[0060] It is worth noting that other wavelength division multiplexing and wavelength demultiplexing micro-ring devices can also be extended in this way.
[0061] Figure 11 This is a schematic diagram of the wavelength control circuit for the high-order microring filter and embedded microring photodetector provided in the embodiments of this application. Figure 11 Figure (a) shows a planar view of the micro-ring filter, where higher-order micro-rings are formed by... Figure 9 Figure (a) shows a micro-ring constructed by cascading a ring waveguide between a straight waveguide and a ring waveguide. Figure 11 Figure (b) shows the closed-loop implementation of the control circuit. Wavelength control of a single micro-loop and Figure 9 (c) Figure 1 Thus, two or more microrings are controlled by the same control module 3 through closed-loop regulation of multiple outputs, allowing different microrings to operate on the same wavelength.
[0062] It is worth noting that other high-order micro-ring devices can also be extended in this way.
[0063] Figure 12 This is a flowchart illustrating the control method based on an embedded micro-ring photodetector provided by the present invention, as shown below. Figure 12 As shown, the control method based on the embedded micro-ring photodetector includes steps 1210, 1220, 1230, and 1240.
[0064] Step 1210: Detect the light intensity inside the embedded micro-ring photodetector 11 through the micro-ring module 1 to obtain the light signal; Step 1220: Send the optical signal to the front-end module 2, amplify the optical signal, and obtain the monitoring signal; Step 1230: Send the monitoring signal to the control module 3 for logic control to obtain the tuning signal; Step 1240: Send the tuning signal to the tuning drive module 4, and adjust the working wavelength of the embedded micro-ring photodetector 11 according to the tuning signal. In this embodiment, by connecting the common port of the embedded micro-ring photodetector 11, the tuning device 12, and the micro-ring device 13 to the main output path of the micro-ring module 1, a common active region of the photonic devices is formed. This achieves the purpose of increasing the effective waveguide length of the active region, improving detection performance, reducing the number of ports, reducing area overhead, and optimizing the layout. The common port is the port with the same potential among the embedded micro-ring photodetector 11, the tuning device 12, and the micro-ring device 13. This control circuit can simultaneously support the main function of the micro-ring device 13 itself and the detection function of the embedded micro-ring photodetector 11, realizing wavelength control of various micro-ring devices 13 under various working scenarios.
[0065] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A control circuit based on an embedded micro-ring photodetector, characterized in that, The application relates to a micro-ring module (1), a front-end module (2), a control module (3) and a tuning driving module (4), wherein the micro-ring module (1) comprises an embedded micro-ring photoelectric detector (11), a tuning device (12) and at least one micro-ring device (13), the output ends of the embedded micro-ring photoelectric detector (11), the tuning device (12) and the micro-ring device (13) are connected to an output main line of the micro-ring module (1), and the output main line of the micro-ring module (1) serves as an output end of the micro-ring module (1), wherein, the micro-ring module (1) is used for detecting the light intensity inside the embedded micro-ring photoelectric detector (11) to obtain an optical signal; the front-end module (2) is used for amplifying the optical signal to obtain a monitoring signal; the control module (3) is used for performing logical control according to the monitoring signal to obtain a tuning signal, and the circuit used for logical control is a digital circuit or an analog circuit; the tuning driving module (4) is used for tuning the working wavelength of the embedded micro-ring photoelectric detector (11) according to the tuning signal. By connecting the common ports of the embedded micro-ring photoelectric detector (11), the tuning device (12) and the micro-ring device (13) to the output main line of the micro-ring module (1), a common active area of the photonic device is formed, the effective waveguide length of the active area is increased, the detection performance is improved, the number of ports is reduced, the area cost is reduced, and the layout is optimized, the common ports are the ports with the same potential in the embedded micro-ring photoelectric detector (11), the tuning device (12) and the micro-ring device (13), the control circuit can simultaneously support the main body function of the micro-ring device (13) and the detection function of the embedded micro-ring photoelectric detector (11), and wavelength control of various micro-ring devices (13) in various working scenes is realized.
2. The control circuit based on the embedded micro-ring photo-detector as claimed in claim 2, wherein, The embedded micro-ring photoelectric detector (11) comprises a first waveguide (111) and a first PN junction.
3. The control circuit based on the embedded micro-ring photo-detector as claimed in claim 3, wherein, The micro-ring device (13) comprises a second waveguide (112) and a second PN junction.
4. The control circuit based on the embedded microring photodetector of claim 3, wherein, The PN junction comprises a P-type doped region and an N-type doped region.
5. The control circuit based on the embedded microring photodetector of claim 4, wherein, The first PN junction and the second PN junction share the P-type doped region or the N-type doped region.
6. The control circuit based on the embedded microring photodetector of claim 5, wherein, The tuning device (12) is located above, outside, inside, below or adjacent to the first waveguide (111) and the second waveguide (112).
7. The control circuit based on an embedded micro-ring photo-detector according to claim 6, wherein, The embedded micro-ring photoelectric detector (11) embeds the first PN junction into the first waveguide (111), changes the first PN junction bias voltage to construct a space charge region, forms a PIN junction, and detects the light intensity of the resonant wavelength in the micro-ring.
8. The control circuit based on the embedded microring photodetector of claim 7, wherein, In the absence of an optical signal in the first waveguide (111), a first current exists in the PIN junction.
9. The control circuit based on the embedded microring photodetector of claim 8, wherein, In the presence of an optical signal in the first waveguide (111), a second current exists in the PIN junction.
10. The control circuit based on the embedded micro-ring photo-detector according to claim 9, wherein, The size of the first current is smaller than that of the second current.
11. The control circuit based on the embedded micro-ring photo-detector according to claim 10, wherein, The size of the second current is proportional to the intensity of the optical signal in the first waveguide (111), and the ratio is the responsivity of the embedded micro-ring photoelectric detector (11).
12. The control circuit based on the embedded microring photodetector of claim 11, wherein, The first waveguide (111) and the second waveguide (112) are strip waveguides or ridge waveguides.
13. The control circuit based on the embedded microring photodetector of claim 12, wherein, The output end of the micro-ring module (1) is connected with a ground wire or a power supply, and the first input end of the micro-ring module (1) is connected with the input end of the front-end module The output end of the front-end module (2) is connected with the input end of the control module (3), the output end of the control module (3) is connected with the input end of the tuning driving module (4), and the output end of the tuning driving module (4) is connected with the second input end of the micro-ring module (1).
14. A control method based on an embedded micro-ring photodetector, implemented by using the control circuit based on the embedded micro-ring photodetector according to any one of claims 1-13, characterized in that, The method comprises the following steps: The light intensity inside the embedded micro-ring photoelectric detector (11) is detected by the micro-ring module (1) to obtain a light signal; The light signal is sent to the front-end module (2) to amplify the light signal to obtain a monitoring signal; The monitoring signal is sent to the control module (3) for logical control to obtain a tuning signal; The tuning signal is sent to the tuning driving module (4) to control the working wavelength of the embedded micro-ring photoelectric detector (11) according to the tuning signal; By connecting the common port of the embedded micro-ring photoelectric detector (11), the tuning device (12) and the micro-ring device (13) on the output main line of the micro-ring module (1), a common active area of the photonic device is formed, so as to increase the effective waveguide length of the active area, improve the detection performance, reduce the number of ports, reduce the area overhead, optimize the layout, and the common port is the port with the same potential in the embedded micro-ring photoelectric detector (11), the tuning device (12) and the micro-ring device (13), the control circuit can support the main function of the micro-ring device (13) itself and the detection function of the embedded micro-ring photoelectric detector (11) at the same time, and the wavelength control of various micro-ring devices (13) in various working scenes is realized.