Fabricating high quality, high stress channel regions in gate all around field effect transistors (GAA FETs)

By depositing additive elements in the all-ring gate field-effect transistor and performing high-temperature diffusion, a uniform high-stress channel region is formed, which solves the problems of strain delivery difficulties and dopant diffusion in the prior art, and improves carrier mobility and transistor performance.

CN121751664APending Publication Date: 2026-03-27INTEL CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-08-27
Publication Date
2026-03-27

AI Technical Summary

Technical Problem

In gate-all-around field-effect transistors (GAA FETs), existing technologies struggle to effectively deliver high strain to the channel, resulting in limited carrier mobility, and high-temperature diffusion processes may damage the doped source/drain regions.

Method used

By depositing an additive element layer on the nanoribbon channel and performing high-temperature diffusion, a uniform high-stress channel region is formed, preventing the dopant from diffusing outward. Oxygen or nitrogen vacancy-assisted diffusion processes are used to improve the channel lattice quality.

Benefits of technology

It achieves a high-quality, high-stress channel region, improves carrier mobility and reduces leakage current, enhances transistor performance and reliability, and is suitable for manufacturing different types of GAA FETs.

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Abstract

In embodiments of the present disclosure, enhanced nanobelts of the GAA FET are formed using a high temperature diffusion process prior to forming the source / drain regions. The diffusion process includes forming a layer of additive material (e.g., including germanium) around a crystalline nanobelt (e.g., including pure silicon or mainly including silicon), forming a capping layer around the layer of additive material, diffusing the additive material into the crystalline nanobelt (e.g., via heating), and removing the capping layer.
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