Light emitting diode and light emitting device

Abstract

The invention provides a light emitting diode and a light emitting device. According to the light-emitting diode, a metal protection layer in a region corresponding to a semiconductor lamination layer except a conductive hole is arranged to be of a structure with at least one discontinuous region, and the discontinuous region does not contain metal of the metal protection layer, so that the tensile stress of the metal protection layer has a stress cut-off region on a reflecting layer; the tensile stress of the metal protection layer does not act on the film layer of the whole reflection layer, the tensile stress of the metal protection layer does not completely offset the pressure stress of the reflection layer, under the action of the pressure stress, the two sides of the reflection layer shrink towards one side of the semiconductor lamination layer, the middle of the reflection layer protrudes towards one side of the metal protection layer, and the above structure formed by the reflection layer is beneficial for improving the reflectivity. Light beam convergence is facilitated, and the luminous efficiency of the light-emitting diode is improved.

Description

[0001] This application is a divisional application of the invention patent filed by the applicant, Quanzhou Sanan Semiconductor Technology Co., Ltd., on April 23, 2024, with application number 202410493915.4 and invention title "A Light Emitting Diode and Light Emitting Device". Technical Field

[0002] This invention relates to the field of semiconductor device technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0003] A light-emitting diode (LED) is a semiconductor light-emitting device with high conversion efficiency, and it is widely used in lighting, displays, automobiles, communications and other fields.

[0004] Existing light-emitting diodes (LEDs) generally include a substrate and a semiconductor stack disposed on top of the substrate. The semiconductor stack, from top to bottom, includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially. Between the substrate and the semiconductor stack, at least a reflective layer and a metal protective layer are stacked sequentially from top to bottom. The reflective layer is electrically connected to the second semiconductor layer, and the metal protective layer covers the entire surface of the reflective layer opposite to the second semiconductor layer and also wraps around the sides of the reflective layer. Because both the reflective layer and the metal protective layer experience thin-film stress, and the tensile stress of the metal protective layer counteracts the compressive stress of the reflective layer, the reflective layer flattens out. This flattening of the reflective layer reduces its beam-focusing effect, leading to a decrease in the luminous efficacy of the LED.

[0005] To improve the luminous efficiency of light-emitting diodes, this application provides a light-emitting diode and a light-emitting device. Summary of the Invention

[0006] In view of the defects and shortcomings of existing light-emitting diodes, this application provides a light-emitting diode and a light-emitting device. This light-emitting diode has a structure in which the metal protective layer of the semiconductor stack region (excluding the conductive via) has at least one discontinuous region, and the discontinuous region does not contain the metal of the metal protective layer. This causes the two sides of the reflective layer to contract towards the semiconductor stack side, and the middle to bulge towards the metal protective layer side. The reflectivity of the structure formed by the reflective layer is higher than that of a flat reflective layer. This structure is beneficial for beam focusing and can improve the luminous efficiency of the light-emitting diode.

[0007] One embodiment of this application provides a light-emitting diode, comprising: A semiconductor stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially, wherein at least one conductive hole is provided in the semiconductor stack, and the conductive hole penetrates the second semiconductor layer, the active layer, and a portion of the first semiconductor layer; A reflective layer is disposed on the side of the second semiconductor layer away from the active layer; A metal protective layer is disposed on the side of the reflective layer away from the second semiconductor layer; In the region corresponding to the semiconductor stack other than the conductive hole, the metal protective layer has at least one discontinuous region, and the discontinuous region does not contain the metal of the metal protective layer.

[0008] According to another embodiment of this application, a light-emitting device is provided, including a circuit board and a plurality of light-emitting units disposed on the circuit board, wherein the light-emitting units include the light-emitting diodes described in this application.

[0009] As described above, the light-emitting diode and light-emitting device of this application have the following beneficial effects: The light-emitting diode of this application has a structure in which the metal protective layer of the semiconductor stack area, excluding the conductive hole, is configured to have at least one discontinuous region. This structure ensures that the tensile stress of the metal protective layer does not completely act on the entire reflective layer film, and the tensile stress of the metal protective layer does not completely offset the compressive stress of the reflective layer. Under the action of compressive stress, the reflective layer contracts towards the semiconductor stack side on both sides and bulges towards the metal protective layer side in the middle. The reflectivity of the structure formed by the reflective layer is higher than that of a flat reflective layer. This structure is beneficial for beam focusing and can improve the luminous efficiency of the light-emitting diode. Attached Figure Description

[0010] Figures 1 to 8 The diagram shows a top view of the various stages in the fabrication process of a light-emitting diode (LED) in the prior art. Figure 1 The diagram shows a top view of the structure after the MESA pores have been fabricated. Figure 2 The diagram shows a top view of the structure after the transparent conductive layer has been fabricated. Figure 3 The diagram shows a top view of the structure after the second insulating layer has been fabricated. Figure 4 The diagram shows a top view of the structure after the reflective layer has been fabricated. Figure 5 The diagram shows a top view of the structure after the metal protective layer has been prepared. Figure 6 The diagram shows a top view of the structure after the second insulating layer has been fabricated. Figure 7 The diagram shows a top view of the structure after the metal layer has been fabricated. Figure 8 The diagram shown is a top view of the structure after the electrode has been fabricated.

[0011] Figure 9 The diagram shown is a top view of a light-emitting diode in the prior art.

[0012] Figure 10 Displayed as Figure 9 A schematic diagram of the cross-sectional structure along the AA direction.

[0013] Figure 11 This is a schematic diagram of the light path reflection in the reflective layer of a light-emitting diode in the prior art.

[0014] Figure 12 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 1 of this application.

[0015] Figure 13 Displayed as Figure 12 Enlarged schematic diagram of part A in the middle.

[0016] Figure 14 The diagram shown is a top view of a metal protective layer in a light-emitting diode provided in Embodiment 1 of this application.

[0017] Figure 15 The diagram shown is a top view of another metal protective layer in the light-emitting diode provided in Embodiment 1 of this application.

[0018] Figure 16 The diagram shown is a structural schematic of another light-emitting diode provided in Embodiment 1 of this application.

[0019] Figure 17 The diagram shown is a schematic representation of the light path reflection in the reflective layer of a light-emitting diode provided in Embodiment 1 of this application.

[0020] Figure 18 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 2 of this application.

[0021] Figure 19 The diagram shown is a schematic diagram of the light-emitting device provided in Embodiment 3 of this application.

[0022] Component designation explanation 100, Semiconductor stack; 110, First semiconductor layer; 120, Active layer; 130, Second semiconductor layer; 140, MESA via; 200, Transparent conductive layer; 300, Reflective layer; 400, Metal protective layer; 410, Discontinuity region; 500, Conductive via; 510, Second insulating layer; 520, First insulating layer; 530, Third insulating layer; 600, Metal layer; 610, First electrode; 700, Substrate; 710, Substrate; 800, Electrode; 810, Second electrode; 900, Passivation protective layer. Detailed Implementation

[0023] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0024] This application provides a light-emitting diode, including: A semiconductor stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially, wherein at least one conductive hole is provided in the semiconductor stack, the conductive hole penetrating the second semiconductor layer, the active layer, and a portion of the first semiconductor layer; A reflective layer is disposed on the side of the second semiconductor layer away from the active layer; A metal protective layer is disposed on the side of the reflective layer away from the second semiconductor layer; In the region corresponding to the semiconductor stack other than the conductive hole, the metal protective layer has at least one discontinuous region, and the discontinuous region does not contain the metal of the metal protective layer.

[0025] The light-emitting diode provided in this embodiment has a structure in which the metal protective layer of the semiconductor stack region other than the conductive hole is configured to have at least one discontinuous region and the discontinuous region does not contain the metal of the metal protective layer. This makes the tensile stress of the metal protective layer not act on the entire reflective layer film, and the tensile stress of the metal protective layer does not completely offset the compressive stress of the reflective layer. Under the action of compressive stress, the reflective layer shrinks towards the semiconductor stack side on both sides and bulges towards the metal protective layer side in the middle. The reflectivity of the structure formed by the reflective layer is higher than that of a flat reflective layer. The above structure is conducive to beam focusing and can improve the luminous efficiency of the light-emitting diode.

[0026] In some embodiments, the metal protective layer has a plurality of discontinuous regions, which are arranged in parallel at intervals.

[0027] This embodiment improves the reflectivity of the reflective layer, enhances the beam focusing effect, and improves the luminous efficiency of the light-emitting diode by setting multiple discontinuous regions in parallel intervals.

[0028] In some embodiments, the distance between adjacent discontinuous regions is between 1µm and 500µm.

[0029] This embodiment improves the reflectivity of the reflective layer, enhances the beam focusing effect, and improves the luminous efficiency of the light-emitting diode by limiting the distance between adjacent discontinuous regions, while ensuring that the metal protective layer protects the reflective layer.

[0030] In some embodiments, the width of the discontinuous region is between 1µm and 100µm.

[0031] This embodiment limits the width of the discontinuity region, ensuring the protection of the reflective layer by the metal protective layer while maintaining the current expansion effect. It also improves the reflectivity of the reflective layer, enhances the beam focusing effect, and improves the luminous efficiency of the light-emitting diode.

[0032] In some embodiments, the thickness of the metal protective layer is between 50 nm and 3000 nm.

[0033] This embodiment ensures the electrical stability of the light-emitting diode by limiting the thickness of the metal protective layer.

[0034] In some embodiments, the thickness of the reflective layer is between 10 nm and 1000 nm.

[0035] This embodiment ensures the electrical stability of the light-emitting diode by limiting the thickness of the reflective layer.

[0036] In some embodiments, a first insulating layer is disposed on the side of the metal protective layer opposite to the reflective layer, and the first insulating layer is disposed in the discontinuous region.

[0037] In some embodiments, a metal layer is disposed on the side of the first insulating layer opposite to the metal protective layer.

[0038] In some embodiments, a substrate is disposed on the side of the metal layer opposite to the first insulating layer.

[0039] In some embodiments, a second insulating layer and a first insulating layer are sequentially disposed on the inner sidewall of the conductive hole, and the metal layer passes through the conductive hole and is electrically connected to the first semiconductor layer; The second insulating layer extends to the region corresponding to the semiconductor stack except for the conductive hole, is located between the second semiconductor layer and the first insulating layer, and has an interruption region, in which a transparent conductive layer is disposed; The transparent conductive layer is located between the reflective layer and the second semiconductor layer, and the reflective layer wraps around the side of the transparent conductive layer.

[0040] In some embodiments, the metal protective layer has a region on the side near the reflective layer that is not covered by the semiconductor stack, and an electrode is disposed in the region, the electrode being electrically connected to the metal protective layer.

[0041] Another embodiment of this application provides a light-emitting device, including a circuit board and a plurality of light-emitting units disposed on the circuit board, wherein the light-emitting units include the light-emitting diodes provided in this application.

[0042] The light-emitting unit in the light-emitting device of this embodiment uses the light-emitting diode provided in this application. Since the light-emitting diode provided in this application sets the metal protective layer of the semiconductor stack corresponding region other than the conductive hole as a structure with at least one discontinuous region, and the discontinuous region does not contain the metal of the metal protective layer, the tensile stress of the metal protective layer is not completely applied to the entire reflective layer film. The tensile stress of the metal protective layer cannot completely offset the compressive stress of the reflective layer. Under the action of compressive stress, the reflective layer shrinks towards the semiconductor stack side on both sides and bulges towards the metal protective layer side in the middle. The reflectivity of the structure formed by the reflective layer is higher than that of a flat reflective layer, which is beneficial to beam focusing and improves the luminous efficiency of the light-emitting diode. The light-emitting unit in the light-emitting device of this embodiment improves the luminous efficiency of the light-emitting device by using the light-emitting diode provided in this application.

[0043] Figures 1 to 8 The diagram shown is a top view of the various stages in the fabrication process of a light-emitting diode in the prior art. Figure 1 The diagram shows a top view of the structure after the MESA hole 140 is fabricated. The MESA hole 140 passes through the second semiconductor layer 130, the active layer 120, and part of the first semiconductor layer 110 in sequence. Figures 2-7 The transparent conductive layer 200, the second insulating layer 510, the reflective layer 300, and the metal protective layer 400 are sequentially disposed on the second semiconductor layer 130 from bottom to top. Figure 14 and Figure 15 To clearly show the structure of the metal protective layer 400, a top view of the structure after the metal protective layer 400 is fabricated is shown, along with the first insulating layer 520 and the metal layer 600 (used to form the N electrode). Figure 8 This is a top view of the structure after the electrode (P-electrode) has been fabricated. The completed light-emitting diode is shown below. Figure 9 and Figure 10As shown, the system includes a substrate 700 and a semiconductor stack 100 disposed above the substrate 700. The semiconductor stack 100 includes a first semiconductor layer 110, an active layer 120, and a second semiconductor layer 130 stacked sequentially from top to bottom. Corresponding to the semiconductor stack region, a metal layer 600, a first insulating layer 520, a metal protective layer 400, a reflective layer 300, and a transparent conductive layer 200 are sequentially disposed from bottom to top between the substrate 700 and the semiconductor stack 100, starting from the surface of the substrate 700 near the second semiconductor layer 130. At least one conductive hole 500 is disposed within the semiconductor stack 100. The conductive hole 500 is provided with a second insulating layer 510, a first insulating layer 520 and a metal layer 600 in sequence from the outside to the inside. The metal layer 600 passes through the conductive hole 500 and is electrically connected to the first semiconductor layer 110. The metal protective layer 400 has an area on the side surface near the reflective layer 300 that is not covered by the semiconductor stack 100. An electrode 800 is provided in this area. The side of the metal protective layer 400 near the reflective layer 300 (the upper surface of the metal protective layer 400) covers the entire side surface of the reflective layer 300 away from the transparent conductive layer 200 (the lower surface of the reflective layer 300).

[0044] Both the reflective layer 300 and the metal protective layer 400 exhibit thin-film stress. When the metal protective layer 400 is not covering the surface of the reflective layer 300, compressive stress exists within the reflective layer 300, causing the film layer of the reflective layer 300 to develop a curvature. This curvature is beneficial for the reflective layer 300 to converge the reflected light beam. After the metal protective layer 400 is covered onto the surface of the reflective layer 300, the tensile stress of the metal protective layer 400 counteracts the compressive stress of the reflective layer 300. Figure 11 As shown, the film of the reflective layer 300 becomes flat (or, in other words, the curvature of the film of the reflective layer 300 disappears). After the reflective layer 300 becomes flat, the light beam returns along the original optical path, which is not conducive to the convergence of the light beam and leads to a reduction in the luminous efficiency of the light-emitting diode.

[0045] To address the above-mentioned deficiencies, this application provides a light-emitting diode and a light-emitting device. The following embodiments will provide a detailed description.

[0046] Example 1 This embodiment provides a light-emitting diode, such as Figure 12 and Figure 13As shown, the light-emitting diode includes a substrate 700, which has an upper surface and a lower surface disposed opposite to each other. The upper surface of the substrate 700 includes a first region and a second region. Corresponding to the first region, a semiconductor stack 100 is disposed above the upper surface of the substrate 700. The semiconductor stack 100 includes, from top to bottom, a first semiconductor layer 110, an active layer 120, and a second semiconductor layer 130 stacked sequentially. At least one conductive hole 500 is disposed within the semiconductor stack 100, and the conductive hole 500 penetrates the second semiconductor layer 130, the active layer 120, and a portion of the first semiconductor layer 110. A reflective layer 300 and a metal protective layer 400 are stacked sequentially between the substrate 700 and the semiconductor stack 100, with the reflective layer 300 close to the second semiconductor layer 130. As shown... Figures 12-15 As shown, in the region where the semiconductor stack 100 is located (i.e., the first region), corresponding to the regions other than the conductive hole 500, the metal protective layer 400 has at least one discontinuous region 410, and the discontinuous region 410 does not contain the metal of the metal protective layer 400. The discontinuous region 410 makes the tensile stress of the metal protective layer 400 have a stress cutoff region, not completely acting on the entire film layer of the reflective layer 300. The tensile stress of the metal protective layer 400 does not completely offset the compressive stress of the reflective layer 300. Under the action of compressive stress, the reflective layer 300 shrinks towards the semiconductor stack 100 on both sides and bulges towards the metal protective layer 400 in the middle, as shown. Figure 17 As shown, the structure formed by the reflective layer 300 improves the beam focusing effect, increases reflectivity, and enhances the luminous efficacy of the light-emitting diode after the light beam is reflected by the reflective layer 300.

[0047] The substrate 700 provides mechanical support for the light-emitting diode. The substrate 700 can be a non-conductive substrate, a conductive substrate, a light-transmitting substrate, or a heat-dissipating substrate. For example, the non-conductive substrate can be aluminum nitride, sapphire substrate, etc. The conductive substrate can be made of silicon, silicon carbide, or metal, such as copper, tungsten, molybdenum, or an alloy of the aforementioned metals. The heat-dissipating substrate is a ceramic substrate with high heat dissipation rate, such as aluminum nitride.

[0048] The first semiconductor layer 110 is an N-type semiconductor layer that provides electrons through N-type doping. The N-type semiconductor layer can be formed by doping the semiconductor with materials such as Si, Ge, Sn, Se, and Te. The second semiconductor layer 130 is a P-type semiconductor layer that provides holes through P-type doping. The P-type semiconductor layer can be formed by doping the semiconductor with materials such as Mg, Zn, Ca, Sr, and Ba. The active layer 120 can be a single quantum well structure or a multiple quantum well (MQW) structure. The multiple quantum well structure is formed by alternating stacking of quantum well layers and quantum barrier layers. The quantum barrier layer can be a GaN layer, an AlGaN layer, or an AlGaInP layer. Optionally, the active layer 120 can include multiple quantum well structures such as GaN / AlGaN, InAlGaN / InAlGaN, InGaN / AlGaN, GaInP / AlGaInP, GaInP / AlInP, or InGaAs / AlInGaAs. To improve the luminescence efficiency of the active layer 120, this can be achieved by changing the depth of the quantum wells, the number of pairs of quantum wells and the quantum well barrier layers, the thickness, and / or other characteristics in the active layer 120.

[0049] The reflective layer 300 may be formed of at least one metal selected from Ag, Al, Ni, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. The reflective layer 300 is capable of reflecting light radiated from the semiconductor stack 100 toward the substrate 700 back to the semiconductor stack 100 and radiating it out from the light-emitting side of the semiconductor stack 100.

[0050] The function of the metal protective layer 400 is to prevent the metal of the reflective layer 300 from diffusing to other film layers on the side of the metal protective layer 400 away from the reflective layer 300, thus affecting the reflection effect. The material of the metal protective layer 400 can be passivating metal materials such as Pt, Au, TiW, and Cr.

[0051] In optional embodiments, such as Figure 12 and Figure 13 As shown, the metal protective layer 400 has multiple discontinuous regions 410, which are arranged in parallel and spaced apart. Without affecting the function of the metal protective layer 400 in preventing the reflective layer 300 from diffusing to other film layers, the multiple discontinuous regions 410 create multiple stress cutoff zones for the tensile stress of the entire metal protective layer 400. This is beneficial for the reflective layer 300 to form a structure with a certain curvature, which is conducive to the reflection and focusing of light beams, thereby improving the luminous efficiency of the light-emitting diode. Optionally, the multiple discontinuous regions 410 of the metal protective layer 400 may not be arranged in parallel; for example, they may be arranged at a certain angle, as long as the tensile stress of the entire metal protective layer 400 does not completely offset the compressive stress of the reflective layer 300. Figure 14As shown, the metal protective layer 400 has two discontinuous regions 410, which are vertically arranged between each other. Current is injected from the center and expands outwards, resulting in better current diffusion. Optionally, as... Figure 15 As shown, the metal protective layer 400 has a discontinuity region 410. Optionally, for smaller LEDs, the discontinuity region 410 of the metal protective layer 400 can be as follows: Figure 16 As shown.

[0052] In optional embodiments, such as Figure 13 As shown, the vertical distance between adjacent interrupted regions 410 (that is, the width of the metal protective layer 400 between two adjacent interrupted regions 410) is between 1µm and 500µm. Optionally, the vertical distance between adjacent interrupted regions 410 can be, for example, 1µm, 50µm, 100µm, 150µm, 200µm, 250µm, 300µm, 350µm, 400µm, 450µm, or 500µm. The width of the interrupted region 410 is between 1µm and 100µm. Optionally, the width of the interrupted region 410 can be, for example, 1µm, 20µm, 40µm, 60µm, 80µm, or 100µm. The width of the interrupted region 410 should not be set too large, as this will affect the current spreading effect. The vertical distance between adjacent discontinuous regions 410 and / or the width of the discontinuous region 410 should ensure that it does not affect the function of the metal protective layer 400 in preventing the reflective layer 300 from diffusing to other film layers. For the entire metal protective layer 400, the distance between each adjacent discontinuous region 410 may be equal or unequal.

[0053] In an optional embodiment, the thickness of the metal protective layer 400 is between 50 nm and 3000 nm; the thickness of the reflective layer 300 is between 10 nm and 1000 nm. Optionally, the thickness of the metal protective layer 400 can be, for example, 50 nm, 100 nm, 500 nm, 1000 nm, 1500 nm, 2000 nm, 2500 nm, 3000 nm, etc.; the thickness of the reflective layer 300 can be, for example, 10 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, etc. Since both the metal protective layer 400 and the reflective layer 300 are conductive, if the thickness of either the metal protective layer 400 or the reflective layer 300 is too thin when current is injected, it will lead to electrical instability.

[0054] In optional embodiments, such as Figure 12As shown, a first insulating layer 520 is disposed on the surface of the metal protective layer 400 facing away from the reflective layer 300. The first insulating layer 520 extends to the peripheral region of the semiconductor stack 100 (that is, from the first region to the second region) and fills the discontinuity region 410. Since the metal protective layer 400 has a certain height, if the discontinuity region 410 is not filled with the first insulating layer 520, the entire first insulating layer 520 will collapse. This collapse will cause a certain height difference in the semiconductor stack 100, affecting the reliability of the semiconductor stack 100. The material of the first insulating layer 520 can be, for example, SiO2, SiN, or SiO2. x N y A DBR is a material selected from TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, or MgF2, or formed by repeatedly stacking two or more of the aforementioned materials.

[0055] In optional embodiments, such as Figure 12 As shown, a metal layer 600 is disposed on the side of the first insulating layer 520 facing away from the metal protective layer 400 (that is, the lower surface of the first insulating layer 520). The metal layer 600 has two metal layers: one metal layer is an N-electrode layer, and the material of the N-electrode layer can be, for example, Al, Ag, Cr, Pt, or TiW; the other metal layer is a bonding layer, which adheres one side of the semiconductor stack 100 to the substrate 700. The bonding layer is usually made of metals such as gold, tin, titanium, nickel, or platinum, and the bonding layer can be a combination of multiple materials.

[0056] In optional embodiments, such as Figure 12As shown, at least one conductive hole 500 is provided in the semiconductor stack 100 (only two conductive holes 500 are shown in the figure to highlight the discontinuity region 410). The inner sidewall of the conductive hole 500 is provided with a second insulating layer 510, a first insulating layer 520 and a metal layer 600 from the outside to the inside. The remaining space of the conductive hole 500 after the second insulating layer 510 and the first insulating layer 520 are provided is filled with the metal layer 600 (that is, the side of the conductive hole 500 near the first semiconductor layer 110 and the sidewall of the first insulating layer 520 are both provided with the metal layer 600). The metal layer 600 passes through the conductive hole 500 and is electrically connected to the first semiconductor layer 110. The second insulating layer 510 extends from the conductive hole 500 to the edge region of the semiconductor stack 100 and the edge of the second region. The material of the second insulating layer 510 can be the same as that of the first insulating layer 520. Corresponding to the semiconductor stack 100 region (which can also be called the first region), except for the conductive hole 500, the second insulating layer 510 has an interruption region, and a transparent conductive layer 200 is disposed in the interruption region. The second insulating layer 510 is located between the second semiconductor layer 130 and the first insulating layer 520. The transparent conductive layer 200 is located between the reflective layer 300 and the second semiconductor layer 130, and the reflective layer 300 covers the side of the transparent conductive layer 200. The transparent conductive layer 200 can serve as an ohmic contact layer for the second semiconductor layer 130, which is beneficial for the input and output of current in the semiconductor stack 100, and also beneficial for the light-emitting diode to have good electrical performance. In addition, the transparent conductive layer 200 also has the function of current spreading, spreading the current on the surface of the second semiconductor layer 130 away from the active layer 120, which is beneficial for the light-emitting diode to have good electrical performance. The transparent conductive layer 200 can be an oxide material with high transparency, high conductivity, and low contact resistance, such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), zinc oxide (ZnO), cadmium tin oxide (CTO), indium oxide (InO), indium (In)-doped zinc oxide (ZnO), aluminum (Al)-doped zinc oxide (ZnO), gallium (Ga)-doped zinc oxide (ZnO), or any combination thereof. Using the above materials can enhance the current spreading effect of the transparent conductive layer 200. It is understood that the material of the transparent conductive layer 200 is not limited to these, and can also be other materials that are beneficial to current spreading.

[0057] In optional embodiments, such as Figure 12 As shown, the metal protective layer 400 has a region on its surface near the reflective layer 300 that is not covered by the semiconductor stack 100 (corresponding to the second region on the upper surface of the substrate 700). An electrode 800 is disposed in this region and is electrically connected to the metal protective layer 400. The electrode 800 can be a P electrode, and the material of the electrode 800 can be, for example, Ti, Pt, Ni, Au, Sn, etc.

[0058] In an optional embodiment, the surface of the first semiconductor layer 110 away from the active layer 120 is a rough surface, which is beneficial to the light emission effect of the light-emitting diode. Optionally, a passivation protection layer 900 is provided on the surface and sidewalls of the semiconductor stack 100, the sidewalls and part of the upper surface of the electrode 800, and the surface of the region between the semiconductor stack 100 and the motor 800. The material of the passivation protection layer 900 can be a transparent insulating material to achieve insulation protection for the light-emitting diode. At the same time, the passivation protection layer 900 has the property of allowing most of the light to pass through. The material of the passivation protection layer 900 can be, for example, transparent silicone, epoxy resin, etc.

[0059] The performance of the LED provided in Example 1 and the LED in the prior art were tested under the same current. The test results are shown in Table 1. Table 1

[0060] As can be seen from Table 1, the light-emitting diode provided in this embodiment has improved both the light source brightness efficiency and light extraction efficiency compared to existing light-emitting diodes. The light-emitting diode provided in this embodiment, by configuring the metal protective layer 400 in the semiconductor stack area (excluding the conductive hole) as having at least one discontinuous region 410, where the discontinuous region 410 does not contain the metal of the metal protective layer 400, creates a stress cutoff region for the tensile stress of the metal protective layer 400. The tensile stress of the metal protective layer 400 is not fully applied to the entire reflective layer 300. Under compressive stress, the reflective layer 300 forms a structure with a certain curvature, which is beneficial for improving the reflection efficiency of the reflective layer 300 and enhancing the beam focusing effect.

[0061] Example 2 This embodiment also provides a light-emitting diode device, such as... Figure 18 As shown, the difference between the LED device in this embodiment and that in Embodiment 1 is: The LED device in this embodiment is a flip-chip structure, while the LED device provided in Embodiment 1 is a vertical chip structure.

[0062] like Figure 18As shown, the light-emitting diode device includes a substrate 710. The upper surface of the substrate 710 includes a first electrode region and a second electrode region. For example, the first electrode region can be a P-electrode region, and the second electrode region can be an N-electrode region. Corresponding to the first and second electrode regions, the upper surface of the substrate 710 is sequentially disposed from bottom to top as follows: a first semiconductor layer 110, an active layer 120, a third semiconductor layer 130, a transparent conductive layer 200, a second insulating layer 510, a reflective layer 300, a metal protective layer 400, and a first insulating layer 520. The second insulating layer 510 has an interrupted region, and a reflective layer 300 is disposed within the interrupted region. The reflective layer 300 is electrically connected to the transparent conductive layer 200 by filling the interrupted region. Corresponding to the first region, a second electrode 810 is disposed on the upper surface of the first insulating layer 520. The second electrode 810 is electrically connected to the metal protective layer 400. The material of the second electrode 810 can be, for example, Ti, Pt, Ni, Au, Sn, etc. Corresponding to the second region, a first electrode 610 is disposed on the upper surface of the first insulating layer 520. The first electrode 610 is electrically connected to the first semiconductor layer 110. The material of the first electrode 610 can be, for example, Al, Ag, Cr, Pt, TiW. A third insulating layer 530 is disposed on the side surface and part of the surface of the first electrode 610, as well as on the side surface and part of the surface of the second electrode 810. The third insulating layer 530 provides insulation protection for the light-emitting diode and has the property of allowing most of the light to pass through. The material can be, for example, transparent silicone, epoxy resin, etc.

[0063] In the second region, the metal protective layer 400 has at least one discontinuous region 410, and the discontinuous region 410 does not contain the metal of the metal protective layer 400. In this embodiment, the light-emitting diode, by providing at least one discontinuous region 410 in the metal protective layer 400 corresponding to the second region, ensures that the tensile stress of the metal protective layer 400 has a stress cutoff region, not fully acting on the entire reflective layer 300. Under compressive stress, the reflective layer 300 forms a structure with a certain curvature, which is beneficial to improving the beam focusing effect in the reflective layer 300, increasing reflectivity, and improving the luminous efficiency of the light-emitting diode.

[0064] Example 3 This embodiment provides a light-emitting device, such as... Figure 19As shown, the device includes a circuit board 021 and multiple light-emitting units 022 disposed on the circuit board 021. Each light-emitting unit 022 includes a light-emitting diode (LED) as provided in Embodiment 1 or Embodiment 2. In Embodiment 1 or Embodiment 2, the LED is configured with at least one discontinuous region 410 in areas where the metal protective layer 400 was originally a continuous structure. This discontinuous region 410 does not contain any metal from the metal protective layer 400. This creates a stress cutoff zone for the tensile stress of the metal protective layer 400, preventing it from acting on the entire reflective layer 300. The tensile stress of the metal protective layer 400 cannot completely offset the compressive stress of the reflective layer 300. Under compressive stress, the reflective layer 300 contracts towards the semiconductor stack 100 on both sides and protrudes towards the metal protective layer 400 in the middle. This structure of the reflective layer 300 improves reflectivity, facilitates beam focusing, and enhances the luminous efficiency of the LED. The light-emitting unit 022 in this embodiment, by employing the LED provided in Embodiment 1 or Embodiment 2, improves the luminous efficiency of the light-emitting device.

[0065] The aforementioned light-emitting device can be used as a flashlight for handheld communication devices, a lighting fixture, a vehicle lighting fixture, a stage light, etc., and can improve the light efficiency of the light-emitting device.

[0066] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A light-emitting diode, characterized in that, include: A semiconductor stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially, wherein at least one conductive hole is provided in the semiconductor stack, and the conductive hole penetrates the second semiconductor layer, the active layer, and a portion of the first semiconductor layer; A reflective layer is disposed on the side of the second semiconductor layer away from the active layer; A metal protective layer is disposed on the side of the reflective layer away from the second semiconductor layer; The metal protective layer has at least one discontinuous region corresponding to the area other than the conductive hole, and the thickness of the metal protective layer is between 50 nm and 3000 nm.

2. The light-emitting diode according to claim 1, characterized in that, The thickness of the reflective layer is between 10 nm and 1000 nm.

3. The light-emitting diode according to claim 1, characterized in that, The metal protective layer has multiple discontinuous regions.

4. The light-emitting diode according to claim 3, characterized in that, Multiple discontinuous regions are arranged in parallel at intervals.

5. The light-emitting diode according to claim 4, characterized in that, The distance between adjacent discontinuous regions is between 1µm and 500µm.

6. The light-emitting diode according to claim 3, characterized in that, The multiple interval regions are arranged at an angle to each other.

7. The light-emitting diode according to any one of claims 1 to 6, characterized in that, The width of the discontinuous region is between 1µm and 100µm.

8. The light-emitting diode according to claim 1, characterized in that, The metal protective layer is provided with a first insulating layer on the side opposite to the reflective layer, and the discontinuous region is provided with the first insulating layer.

9. The light-emitting diode according to claim 8, characterized in that, A metal layer is disposed on the side of the first insulating layer that is away from the metal protective layer.

10. The light-emitting diode according to claim 9, characterized in that, A substrate is disposed on the side of the metal layer opposite to the first insulating layer.

11. The light-emitting diode according to claim 9, characterized in that, The inner sidewall of the conductive hole is provided with a second insulating layer and a first insulating layer in sequence, and the metal layer passes through the conductive hole and is electrically connected to the first semiconductor layer; The second insulating layer extends to the region corresponding to the semiconductor stack except for the conductive hole, is located between the second semiconductor layer and the first insulating layer, and has an interruption region, in which a transparent conductive layer is disposed; The transparent conductive layer is located between the reflective layer and the second semiconductor layer, and the reflective layer wraps around the side of the transparent conductive layer.

12. The light-emitting diode according to claim 1, characterized in that, The metal protective layer has a region on the side near the reflective layer that is not covered by the semiconductor stack, and an electrode is disposed in the region, which is electrically connected to the metal protective layer.

13. A light-emitting device, characterized in that, It includes a circuit board and a plurality of light-emitting units disposed on the circuit board, wherein the light-emitting units include light-emitting diodes as described in any one of claims 1 to 12.

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