Method for preparing transverse heterojunction photoelectric device by using laser irradiation technology
By combining mask vacuum evaporation with laser ablation patterning, the precision and contamination issues in the fabrication of lateral heterojunction optoelectronic devices in existing technologies have been solved, achieving high-precision and low-cost heterojunction structure fabrication and simplifying the operation process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-31
- Publication Date
- 2026-03-27
AI Technical Summary
Existing technologies for fabricating lateral heterojunction optoelectronic devices suffer from problems such as reliance on precision equipment, easy introduction of wrinkles and contamination, poor repeatability, high cost, cumbersome steps, and easy appearance of interface defects, making it difficult to achieve high-performance and high-precision device fabrication.
A method combining mask vacuum evaporation and laser ablation patterning is adopted. Thin-layer materials are directly transferred to the substrate surface by mechanical lift-off. The thermal effect generated by laser irradiation causes the atoms at the material interface to thermally diffuse and rearrange, forming a heterojunction structure, thus avoiding the influence of organic contaminants in the photolithography process.
High-precision heterojunction structure fabrication was achieved, reducing contact resistance, minimizing organic residues and mechanical damage, improving alignment accuracy and device integration, and simplifying the operation process.
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Figure CN121751958A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of micro-nano fabricated devices, and more specifically to a method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology. Background Technology
[0002] With the rapid development of optoelectronic technology, low-dimensional materials, due to their high specific surface area, significant quantum confinement effect, and excellent carrier transport characteristics, are widely used in organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), and organic photodetectors. However, limited charge doping and contamination issues caused by multi-step microfabrication in two-dimensional materials hinder further performance improvements. To achieve high-performance device fabrication, controllable fabrication processes are essential.
[0003] Currently, heterojunction device fabrication methods include mechanical transfer, CVD in-situ growth, photolithography etching, and mask-assisted space-selective deposition, among others. Mechanical exfoliation involves transferring thin or monolayer quasi-one-dimensional / two-dimensional materials to a target substrate using flexible carriers such as PDMS and then splicing them into homojunctions / heterojunctions. However, this method relies on precision equipment or manual labor, easily introducing wrinkles, contamination, and interface gaps, resulting in poor repeatability and difficulty in large-scale deployment. CVD in-situ growth involves sequentially growing different materials on the same substrate by controlling precursor distribution and growth parameters. However, it requires strict matching of growth conditions (such as temperature and gas concentration) for different materials, and the interface is prone to crystallization defects or component diffusion, making it difficult to achieve high-precision integration of complex structures. Photolithography etching involves defining patterns through photolithography and then using etching techniques such as plasma to fabricate heterojunction regions. However, the etching process can cause irreversible damage to two-dimensional materials (such as increased defect state density), affecting carrier transport performance, and the process is cumbersome and costly. Mask-assisted deposition involves covering a portion of the substrate with a metal mask or photoresist mask, ablating and depositing the first material, removing the mask, and then depositing the second material to form a lateral heterojunction boundary. However, it still suffers from low fabrication efficiency. Summary of the Invention
[0004] To address the shortcomings of existing technologies, the present invention aims to provide a method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology, employing a combination of mask vacuum evaporation and laser ablation patterning. Thin-layer material is directly transferred to the substrate surface via mechanical lift-off, followed by mask vacuum evaporation, eliminating the need for flexible media such as PDMS and avoiding the influence of organic contaminants in photolithography. The localized thermal effect generated by laser irradiation serves as the driving force, causing thermal diffusion and rearrangement of atoms at the material interface, thereby forming a heterojunction structure. By designing the laser region and setting laser parameters, the device can be fabricated under controlled processing.
[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: A method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology includes the following steps: The Si / SiO2 wafer substrate is pretreated, and a thin layer of material is obtained on the pretreated Si / SiO2 wafer substrate by mechanical exfoliation.
[0006] A mask is coated on the surface of the thin material, and after encapsulation, it is subjected to laser irradiation to obtain a lateral heterojunction optoelectronic device.
[0007] The material used for encapsulation is hexagonal boron nitride (hBN).
[0008] In a preferred embodiment of the present invention, the thickness of the thin-layer material is 15nm to 60nm.
[0009] In a preferred embodiment of the present invention, the thin-layer material is a rare earth metal tellurium-based compound or a two-dimensional transition metal tellurium-based compound, and the thickness of the thin-layer material is 15 nm to 60 nm.
[0010] In a preferred embodiment of the present invention, the thickness of the encapsulation material is 10nm~16nm.
[0011] In a preferred embodiment of the present invention, the thin-layer material is selected from either SmTe3 or DyTe3.
[0012] In a preferred embodiment of the present invention, the method of mask deposition is to directly perform electron beam evaporation deposition, depositing 5nm~10nm of chromium and 50nm~80nm of gold.
[0013] In a preferred embodiment of the present invention, the wavelength of the laser irradiation treatment is 405nm~638nm, and the power of the laser irradiation treatment is 3μw / μm. 2 ~80.00μw / μm 2 The laser irradiation treatment speed is 0.1μm / s~0.5μm / s, the single-point delay time of the laser irradiation treatment is 2s~2min, and the single-point return time is 0.1s~0.5s.
[0014] In a preferred embodiment of the present invention, the laser beam path for laser irradiation is shaped by a lens group and a reflector, and then the laser beam is focused onto the sample surface by an objective lens after passing through a galvanometer. The laser power for laser irradiation is controlled by attenuating the laser power through an attenuator or by using a signal generator to control the power level. The laser irradiation area is not limited to the channel and can also be located at both ends of the electrode.
[0015] Compared with the prior art, the beneficial effects of the present invention are: 1. The present invention provides a method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology. It employs a combination of mask vacuum evaporation and laser ablation patterning, and directly transfers thin-layer material to the substrate surface via mechanical lift-off, followed by mask vacuum evaporation. This eliminates the need for transfer using flexible media such as PDMS, while also avoiding the influence of organic contaminants in the photolithography process.
[0016] 2. This invention utilizes laser irradiation technology to fabricate lateral heterojunction optoelectronic devices, improving the contact between the material and the metal electrode. Direct vacuum evaporation of the mask allows for direct contact between the material and the electrode, resulting in strong van der Waals interactions and a 1-2 order of magnitude reduction in contact resistance. This invention also utilizes direct laser patterning to reduce organic residue and mechanical damage. This significantly reduces residual adhesive residue and organic contaminants in the photolithography process. It avoids sample degradation caused by contact between chemicals and the sample in traditional photolithography. Furthermore, it improves alignment accuracy: the laser beam is computer-controlled (using a piezoelectric displacement stage), reducing alignment errors to the nanometer level (≤50nm), meeting the requirements of highly integrated devices.
[0017] 3. The core of this invention's method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology is the use of a laser, essentially achieving step size adjustment through an electric displacement stage; it is no longer limited to mature processes such as Raman and femtosecond lasers. Maintenance and operation are simple and convenient, and the laser coverage range is further expanded, no longer limited to a specific wavelength (such as 532nm). For example, the following example uses 638nm laser irradiation, which can meet the ablation requirements while rationally controlling the laser energy, thereby effectively avoiding excessive material loss caused by excessively long wavelengths and high energy, ensuring the accuracy of the ablation process and the effective utilization rate of materials. Attached Figure Description
[0018] Figure 1 These are optical microscopic images of two types of photomasks used in Embodiment 1 of the present invention, wherein A is an optical microscopic image of the device fabricated by the photomask, and B is an optical microscopic image of the device fabricated by the spherical photomask.
[0019] Figure 2 This is an optical microscopic image of the device fabricated under the pre-electrode conditions of the present invention.
[0020] Figure 3 These are the output characteristic curves of the device fabricated by mask evaporation and the device fabricated by pre-electrode under dark conditions in this invention.
[0021] Figure 4These are optical microscopic images of the channel region treated with 638nm laser irradiation in this invention. A is an optical microscopic image of a thin layer of SmTe3 material without laser irradiation under hBN packaging conditions; B is an optical microscopic image of a thin layer of SmTe3 material after laser irradiation under hBN packaging conditions; C is an optical microscopic image of a thin layer of SmTe3 material without laser irradiation under hBN packaging conditions; and D is an optical microscopic image of a thin layer of SmTe3 material after laser irradiation under hBN packaging conditions.
[0022] Figure 5 This is an image of the SmTe3 thickness measured using an atomic force microscope in Example 1 of the present invention.
[0023] Figure 6 This is a spectral response diagram of single material SmTe3 under different powers under a 638nm laser in an embodiment of the present invention.
[0024] Figure 7 This is a Raman image of the laser irradiation processing device before and after laser irradiation, as shown in an embodiment of the present invention.
[0025] Figure 8 This is an AFM image of the material thickness and surface roughness before and after laser irradiation treatment during the process of this invention. Detailed Implementation
[0026] The following detailed description, in conjunction with embodiments of the present invention and accompanying drawings, provides a clear and complete illustration of the technical solutions in these embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.
[0027] It should be noted that all technical terms used in this invention are for the purpose of describing specific embodiments only and are not intended to limit the scope of protection of this invention. Unless otherwise specified, all raw materials, reagents, instruments and equipment used in the following embodiments of this invention can be purchased from the market or prepared by existing methods.
[0028] Example 1 A method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology includes the following steps: (1) Substrate pretreatment: The Si / SiO2 wafer was ultrasonically cleaned for 1 minute each with acetone, ethanol and deionized water, dried with nitrogen and then placed in a plasma cleaner to remove surface organic contaminants and improve adhesion; it was then cut into 0.6mm×0.6mm silicon wafers with a diamond cutter for use.
[0029] (2) Acquisition of low-dimensional materials: Thin-layer materials (35.42 nm SmTe3, 12.45 nm hBN) were obtained from bulk single crystals by mechanical exfoliation. The material quality and number of layers were evaluated using an optical microscope, and the sample thickness was then accurately measured using AFM.
[0030] (3) Mask alignment: Alignment of the mask and the material and fixation of the mask are performed by combining an optical microscope system and a three-axis displacement stage.
[0031] (4) Electron beam evaporation coating: Cr / Au (5 / 50nm) electrodes are deposited by electron beam evaporation coating technology.
[0032] (5) The laser irradiation process is as follows: the sample is placed on the sample stage of the laser system, the material surface is observed through a 50× objective lens, the spot size is reduced to 1μm by focusing, a 2×10μm² channel irradiation area is designed, and the laser parameters are set (wavelength 638nm, laser power 21.13μw / μm). 2 The laser beam, with a velocity of 0.5 μm / s, focuses and irradiates the interface region (single-point irradiation time 6 s). The local thermal effect generated by the laser causes thermal diffusion and rearrangement of the atoms at the material interface. Raman spectroscopy shows an increase in the intensity of the TeOx mode peak, indicating a phase transition in the material, which in turn forms a heterostructure.
[0033] Example 2 A method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology includes the following steps: (1) Substrate pretreatment: The Si / SiO2 wafer was ultrasonically cleaned for 1 minute each with acetone, ethanol and deionized water, dried with nitrogen and then placed in a plasma cleaner to remove surface organic contaminants and improve adhesion; it was then cut into 0.6mm×0.6mm silicon wafers with a diamond cutter for use.
[0034] (2) Acquisition of low-dimensional materials: Thin-layer materials (42 nm, DyTe3) were obtained from bulk single crystals by mechanical exfoliation. The material quality and number of layers were evaluated using an optical microscope, and the sample thickness was then accurately measured using AFM.
[0035] (3) Mask alignment: Alignment of the mask and the material and fixation of the mask are performed by combining an optical microscope system and a three-axis displacement stage.
[0036] (4) Electron beam evaporation coating: Cr / Au (5 / 60nm) electrodes are deposited by electron beam evaporation coating technology.
[0037] (5) The laser irradiation process is as follows: the sample is placed on the sample stage of the laser system, the material surface is observed through a 50× objective lens, the spot size is reduced to 1μm by focusing, a 5×10μm² irradiation area is designed for both electrodes, and the laser parameters are set (wavelength 532nm, laser power 13.65μw / μm). 2 The laser beam, with a velocity of 0.1 μm / s, focuses and irradiates the interface region (single-point irradiation time 3 s). The local thermal effect generated by the laser causes thermal diffusion and rearrangement of the atoms at the material interface. Raman spectroscopy shows an increase in the intensity of the TeOx mode peak, indicating a phase transition in the material, which in turn forms a heterostructure.
[0038] Example 3 A method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology includes the following steps: (1) Substrate pretreatment: The Si / SiO2 wafer was ultrasonically cleaned for 1 minute each with acetone, ethanol and deionized water, dried with nitrogen and then placed in a plasma cleaner to remove surface organic contaminants and improve adhesion; it was then cut into 0.6mm*0.6mm silicon wafers with a diamond cutter for use.
[0039] (2) Acquisition of low-dimensional materials: Thin-layer materials (38 nm, SmTe3) were obtained from bulk single crystals by mechanical exfoliation. The material quality and number of layers were evaluated using an optical microscope, and the sample thickness was then accurately measured using AFM.
[0040] (3) Mask alignment: Alignment of the mask and the material and fixation of the mask are performed by combining an optical microscope system and a three-axis displacement stage.
[0041] (4) Electron beam evaporation coating: Cr / Au (5 / 50nm) electrodes are deposited by electron beam evaporation coating technology.
[0042] (5) The laser irradiation process is as follows: the sample is placed on the sample stage of the laser system, the material surface is observed through a 50× objective lens, the spot size is reduced to 0.5μm by focusing, a 2×5μm² irradiation area is designed on one side of the electrode, and the laser parameters are set (wavelength 638nm, laser power 29.24μw / μm). 2 The laser beam has a velocity of 0.1 μm / s and is focused to irradiate the interface region (single-point delay time 2 s, single-point return time 0.1 s). The local thermal effect generated by the laser causes thermal diffusion and rearrangement of the atoms at the material interface. Raman spectroscopy shows an increase in the intensity of the TeOx mode peak, indicating a phase transition in the material and the formation of a heterostructure.
[0043] Example 4 A method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology includes the following steps: (1) Substrate pretreatment: The Si / SiO2 wafer was ultrasonically cleaned for 1 minute each with acetone, ethanol and deionized water, dried with nitrogen and then placed in a plasma cleaner to remove surface organic contaminants and improve adhesion; it was then cut into 0.6mm×0.6mm silicon wafers with a diamond cutter for use.
[0044] (2) Acquisition of low-dimensional materials: Thin-layer materials (40 nm, SmTe3) were obtained from bulk single crystals by mechanical exfoliation. The material quality and number of layers were evaluated using an optical microscope, and the sample thickness was then accurately measured using AFM.
[0045] (3) Mask alignment: Alignment of the mask and the material and fixation of the mask are performed by combining an optical microscope system and a three-axis displacement stage.
[0046] (4) Electron beam evaporation coating: Cr / Au (5 / 50nm) electrodes are deposited by electron beam evaporation coating technology.
[0047] (5) The laser irradiation process is as follows: the sample is placed on the sample stage of the laser system, the material surface is observed through a 50× objective lens, the spot size is reduced to 1μm by focusing, a 2×3μm² irradiation area is designed on one side of the electrode, and the laser parameters are set (wavelength 405nm, laser power 6.24μw / μm). 2 The laser beam has a velocity of 0.1 μm / s and is focused to irradiate the interface region (single-point delay time 48 s, single-point return time 0.1 s). The local thermal effect generated by the laser causes thermal diffusion and rearrangement of the atoms at the material interface. Raman spectroscopy shows an increase in the intensity of the TeOx mode peak, indicating a phase transition in the material and the formation of a heterostructure.
[0048] Comparative Example 1 A memristor device based on a titanium trisulfide / titanium dioxide / titanium trisulfide lateral heterojunction, its fabrication method, and its application, comprising the following steps: (1) After peeling off the mica sheet, the freshly peeled mica sheet is re-attached to form an atomic-level confined space at the bonding point, thus obtaining a mica sheet with an atomic-level confined space.
[0049] (2) After mixing titanium powder, sulfur powder and iodine, the mixture obtained is used as the reaction source. Two-dimensional titanium trisulfide is grown in the atomic-level confined space of the mica sheet with atomic-level confined space by chemical vapor transport method. After peeling, a mica sheet with two-dimensional titanium trisulfide nanosheets on the surface is obtained.
[0050] (3) The two-dimensional titanium trisulfide on the surface of the mica sheet containing two-dimensional titanium trisulfide nanosheets is transferred to the surface of the silicon substrate to obtain a silicon substrate containing two-dimensional titanium trisulfide; the two-dimensional titanium trisulfide on the silicon substrate containing two-dimensional titanium trisulfide is subjected to laser in-situ selective oxidation by laser direct writing to obtain a TiS3 / TiO2 / TiS3 lateral heterojunction on the surface of the silicon substrate.
[0051] The aforementioned prior art provides a method for preparing a lateral heterojunction, which grows two-dimensional titanium trisulfide in the atomically confined space of a mica sheet with atomically confined space through chemical vapor transport. After being transferred to a substrate, the device structure is obtained by laser direct writing. However, the process is complex, has low series fault tolerance, and a long cycle.
[0052] Comparative Example 2 An axial micropillar array heterojunction photodetector chip and its fabrication method are disclosed, comprising the following steps: On a substrate with a bottom electrode, a perovskite layer and an organic semiconductor layer are sequentially spin-coated and heat-treated to form a perovskite layer. A sacrificial layer and a UV adhesive layer are sequentially spin-coated on the organic semiconductor layer. The UV adhesive layer is imprinted using a PDMS elastic template with a micropore array. After UV exposure and curing, the template is removed to obtain a UV adhesive micropillar array. An oxygen plasma etching process is used to form a UV adhesive micropore array mask, and the pattern is transferred to the sacrificial layer. After evaporating a metal layer, a metal lattice mask is formed on the surface of the organic semiconductor layer through a lift-off process. Using the metal lattice mask as an etching mask, two-step ICP reactive ion etching is performed using different etching gases to sequentially etch the organic semiconductor layer and the perovskite layer until the bottom electrode is exposed, ultimately forming an axial micropillar array heterojunction.
[0053] While the aforementioned existing technologies can replace development and exposure with imprinting, they introduce the high-risk process of plasma etching, which poses a potential damage to particularly sensitive materials.
[0054] Results Analysis Figure 1 These are optical microscopic images of two types of photomasks used in Embodiment 1 of the present invention, where A is an optical microscopic image of a device fabricated using a conventional electrode photomask, and B is an optical microscopic image of a device fabricated using a spherical photomask. It can be seen from the images that the device fabricated using the photomask has higher precision, and the spherical photomask has a higher probability of fabrication. Therefore, the conventional electrode method is still preferred.
[0055] Figure 2 This is an optical micrograph of a device sample prepared under the pre-electrode conditions of the present invention. The image shows that the electrodes are located below the sample, and the electrode thickness should not be too thick, thus limiting the fabrication of the device.
[0056] Figure 3The figures show the output characteristic curves of the device fabricated by mask evaporation and the device fabricated by pre-electrode under dark conditions in this invention. It can be seen from the figure that the contact resistance of the device fabricated by mask evaporation is reduced by 1-2 orders of magnitude and the contact is improved compared to the device fabricated by pre-electrode.
[0057] Figure 4 These are optical microscopic images of the channel region treated with 638nm laser irradiation according to the present invention. A is an optical microscopic image of a thin layer of SmTe3 material without laser irradiation under hBN packaging conditions; B is an optical microscopic image of a thin layer of SmTe3 material after laser irradiation under hBN packaging conditions; C is an optical microscopic image of a thin layer of SmTe3 material without laser irradiation under hBN packaging conditions; and D is an optical microscopic image of a thin layer of SmTe3 material after laser irradiation under hBN packaging conditions. As can be seen from the figures, laser irradiation with a wavelength of 638nm can meet the ablation requirements, and the material can be laser irradiated regardless of whether hBN packaging is used.
[0058] Figure 5 The image shows the thickness of SmTe3 measured using an atomic force microscope in Example 1 of this invention. The image shows that the material thickness is 35.42 nm and the encapsulation hBN thickness is 12.35 nm.
[0059] Figure 6 The above are spectral response diagrams of single material SmTe3 under different powers under a 638nm laser in this embodiment of the invention. The diagram shows that the material can generate a photocurrent signal under 638nm illumination, and the photocurrent increases with the increase of optical power, which confirms that the material has basic photoelectric conversion characteristics and shows potential for further research.
[0060] Figure 7 This is a Raman image of the device before and after laser irradiation in an embodiment of the present invention. The image shows that after laser irradiation, TeO... X (128 cm -1 and 148cm -1 The increased intensity of the oxidation peak indicates that the laser irradiation treatment successfully altered the material.
[0061] Figure 8 The images show the thickness of SmTe3 before and after irradiation, measured using an atomic force microscope (AFM) during the experiments of this invention. The inset is a 3D contour image measured by the AFM, and the area highlighted by the white dashed line represents the scanning area of the AFM. The images show that the material thickness increases after laser irradiation. The inset also shows an increase in the surface roughness of the material.
[0062] Table 1 is a comparison table of data between Examples 1-3 of the present invention and Comparative Examples 1 and 2. Comparative Examples 1 and 2 have complex processes, low series fault tolerance, long cycle time, and high cost, and Comparative Example 2 is not applicable to sensitive materials. Examples 1-3 of the present invention have processes that are applicable to sensitive materials, simple processes, high series fault tolerance, short cycle time, and low cost.
[0063] Table 1 is a comparison table of data from Examples 1-3 of the present invention and Comparative Examples 1 and 2. This invention discloses a method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology. It employs a combination of mask vacuum evaporation and laser ablation patterning, directly transferring thin-layer materials to the substrate surface via mechanical lift-off, followed by mask vacuum evaporation. This eliminates the need for transfer using flexible media such as PDMS, while also avoiding the influence of organic contaminants in the photolithography process.
[0064] It should be noted that when numerical ranges are involved in this invention, it should be understood that both endpoints of each numerical range and any value between the two endpoints can be selected. Since the steps and methods used are the same as in the embodiments, preferred embodiments are described here to avoid redundancy. Although preferred embodiments of the invention have been described, those skilled in the art, once they understand the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this invention.
[0065] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.
Claims
1. A method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology, characterized in that, Includes the following steps: The Si / SiO2 wafer substrate is pretreated, and a thin layer of material is obtained on the pretreated Si / SiO2 wafer substrate by mechanical exfoliation. A mask is coated on the surface of the thin material, and after encapsulation, it is subjected to laser irradiation to obtain a lateral heterojunction optoelectronic device. The encapsulation material is hexagonal boron nitride.
2. The method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology according to claim 1, characterized in that, The thickness of the thin-layer material is 15nm~60nm.
3. The method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology according to claim 1, characterized in that, The thin-layer material is a rare-earth metal tellurium-based compound or a two-dimensional transition metal tellurium-based compound, and the thickness of the thin-layer material is 15nm~60nm.
4. The method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology according to claim 3, characterized in that, The thin-layer material is selected from either SmTe3 or DyTe3.
5. The method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology according to claim 1, characterized in that, The thickness of the packaging material is 10nm~16nm.
6. The method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology according to claim 1, characterized in that, The mask deposition method is to directly perform electron beam evaporation deposition, depositing 5nm~10nm chromium and 50nm~80nm gold.
7. The method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology according to claim 1, characterized in that, The laser irradiation treatment wavelength is 405nm~638nm, and the laser irradiation treatment power is 3μw / μm. 2 ~80μw / μm 2 The laser irradiation treatment speed is 0.1μm / s~0.5μm / s, the single-point delay time of the laser irradiation treatment is 2s~2min, and the single-point return time is 0.1s~0.5s.
8. The method for fabricating lateral heterojunction optoelectronic devices using laser irradiation technology according to claim 1, characterized in that, The laser beam path for laser irradiation is shaped by a lens group and a mirror. Then, the laser beam is focused onto the sample surface by an objective lens after passing through a galvanometer. The laser power for laser irradiation is controlled by attenuating the laser power through an attenuator or by using a signal generator to control the power level. The laser irradiation area is not limited to the channel and can also be located at both ends of the electrode.