High-pressure substrate processing apparatus

Abstract

The invention discloses a high-pressure substrate processing apparatus. The high-pressure substrate processing device comprises an inner cavity, an outer cavity and a fastening module. The inner cavity is formed to accommodate a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure. The outer cavity is provided with a shell used for accommodating the inner cavity; and an outer door movable between a closed state in which the outer door is in contact with the housing and an open state in which the outer door is separated from the housing. The outer cavity is formed to accommodate a shielding gas supplied at a second pressure set with respect to the first pressure. The fastening module is provided with: a support protrusion provided on the housing; a rotating member rotatably provided with respect to the outer door; and a locking protrusion formed by extending from the rotating member and disposed on the support protrusion. The outer door includes an upper plate that is in contact with the housing in the closed state.

Description

Technical Field

[0001] The present invention relates to a processing apparatus for processing substrates in a high-pressure environment. Background Technology

[0002] Typically, in the manufacturing process of semiconductor devices, the semiconductor substrate undergoes various processing steps. These processes include oxidation, nitriding, ion implantation, and deposition. Another method is heat treatment using hydrogen or deuterium to improve the interface properties of semiconductor devices.

[0003] The gas used to process the substrate is supplied to the chamber under high pressure and acts on the semiconductor substrate. In order to maintain high pressure inside the chamber, the chamber housing must be securely closed through a door.

[0004] When the chamber is loosened by high-pressure gas while closed, gaps may form between the shell and the door. These gaps can become channels for gas inside the chamber to escape to the outside. Summary of the Invention

[0005] Technical issues One object of the present invention is to provide a high-voltage substrate processing apparatus that can firmly maintain the closed state between the housing and the door even when the chamber is under high pressure.

[0006] Another object of the present invention is to provide a high-voltage substrate processing apparatus that can minimize the power required for fastening the housing and the door.

[0007] Problem-solving methods To achieve the aforementioned objective, a high-voltage substrate processing apparatus according to one aspect of the present invention may include: an inner cavity configured to accommodate a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an outer cavity comprising: a housing for accommodating the inner cavity; and an outer door movable between a closed state in contact with the housing and an open state separated from the housing, the outer cavity being configured to accommodate a protective gas supplied at a second pressure set relative to the first pressure; and a fastening module comprising: a support protrusion disposed on the housing; a rotating member rotatably disposed relative to the outer door; and a locking protrusion extending from the rotating member and disposed on the support protrusion, the outer door including an upper plate in contact with the housing in the closed state.

[0008] Here, the locking protrusion may be positioned such that it is supported by the support protrusion as it rotates in the closed state.

[0009] Here, the rotating component may be located on the lower side of the upper plate.

[0010] Here, the support protrusion may be provided outwardly on the housing, and the locking protrusion may be bent to surround the support protrusion.

[0011] Here, the outer door may also include a lower plate disposed at a different level from the upper plate, and the rotating member is located between the upper plate and the lower plate.

[0012] Here, the outer door may also include a spacer disposed between the upper plate and the lower plate, and the rotating member may include a rotating ring formed by a hollow portion accommodating the spacer.

[0013] Here, the outer door may also include a seal disposed between the upper plate and the outer shell in the closed state, the locking protrusion being configured to rotate independently of the contact between the upper plate, the seal, and the outer shell.

[0014] Here, the fastening module may further include a drive unit for rotating the rotating member to rotate the locking protrusion.

[0015] Here, the drive unit may include: a driven gear formed on the rotating member; a drive gear meshing with the driven gear; and a motor for rotating the drive gear.

[0016] Here, the outer door may also include a shaft protrusion projecting downward from the upper plate, and the rotating member may include a receiving groove rotatably accommodating the shaft protrusion.

[0017] Here, the rotating member may include: a base portion having the receiving groove; and a protrusion protruding downward from the base portion. The fastening module further includes a drive unit for rotating the rotating member. The drive unit includes: a driven gear formed on the outer surface of the protrusion; a drive gear meshing with the driven gear; and a motor for rotating the drive gear.

[0018] According to one aspect of the high-voltage substrate processing apparatus of the present invention, it may include: a chamber comprising: a housing configured to accommodate a substrate to be processed and process gas supplied at a pressure higher than atmospheric pressure; a door configured to move between a closed state of closing the housing and an open state of opening the housing; and a fastening module comprising: a support protrusion disposed on the housing; a rotating member rotatably disposed on the door; and a locking protrusion extended from the rotating member and disposed on the support protrusion, the door including an upper plate that contacts the housing in the closed state, the rotating member being located below the upper plate.

[0019] Here, the locking protrusion may be positioned such that it is supported by the support protrusion as it rotates in the closed state.

[0020] Here, the locking protrusion may include a locking surface that faces the support protrusion and is located at a higher level than the door.

[0021] Here, the process gas may include a reactive gas containing an active gas and a protective gas containing an inert gas, and the housing may include: an inner shell formed to accommodate the substrate to be processed and the reactive gas; and an outer shell that accommodates the inner shell, the outer shell being combined with the inner shell to form a closed space together with the inner shell to accommodate the protective gas, and the door being formed to close the inner shell.

[0022] Invention Effects According to the high-voltage substrate processing apparatus of the present invention configured as described above, the fastening module for fastening the housing and the door is configured such that the locking protrusion moves relative to the support protrusion provided on the housing and is disposed on the support protrusion, thereby, through the engagement between the locking protrusion and the support protrusion, the closed state between the housing and the door can be firmly maintained even under high pressure in the chamber.

[0023] Furthermore, when the locking protrusions move independently of the door, only the locking protrusions other than the door need to be moved to secure the housing and the door. This minimizes the power required to secure the housing and the door.

[0024] In addition, since the door remains fixed to the housing when the locking protrusion moves, there will be no wear due to the relative rotation between the door and the housing. Attached Figure Description

[0025] Figure 1 This is a conceptual diagram of a high-voltage substrate processing apparatus according to an embodiment of the present invention.

[0026] Figure 2 It is shown Figure 1 An exploded perspective view of the high voltage substrate processing device in its open state.

[0027] Figure 3 It is shown Figure 2 A cross-sectional view of the high voltage substrate processing device in the off state.

[0028] Figure 4 It is used to describe the driver. Figure 3 A sectional perspective view of the structure of the rotating component.

[0029] Figure 5 It is used for explanation Figure 2 A flowchart of the state transition process of the high voltage substrate processing device.

[0030] Figure 6 This is a cross-sectional view showing the off state of a high-voltage substrate processing apparatus according to another embodiment of the present invention. Detailed Implementation

[0031] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0032] This invention is not limited to the embodiments disclosed below, and various modifications can be made, resulting in different forms. These embodiments are provided merely to complete the disclosure of the invention and to fully explain the scope of the invention to those skilled in the art. Therefore, it should be understood that the invention is not limited to the embodiments disclosed below, but includes not only structures that substitute for or add to each other and differ in structure from any embodiment, but also all modifications, equivalents, and even substitutions included within the technical concept and scope of the invention.

[0033] It should be understood that the accompanying drawings are merely for the purpose of facilitating understanding of the embodiments disclosed in this specification, and are not intended to limit the technical concepts disclosed herein. Rather, they should include all modifications, equivalents, and substitutions included within the scope of the invention. The constituent elements in the drawings may be excessively enlarged or reduced in size for ease of understanding, etc., but this does not limit the interpretation of the scope of protection of the invention.

[0034] The terminology used in this specification is for illustrative purposes only and is not intended to limit the invention. Singular expressions include plural expressions unless otherwise explicitly stated in the context. Terms such as "comprising," "constituting," etc., in this specification are intended to specify the presence of features, numbers, steps, actions, constituent elements, components, or combinations thereof described in the specification. That is, terms such as "comprising," "constituting," etc., in this specification should be understood as not precluding the existence or additional possibilities of one or more other features, numbers, steps, actions, constituent elements, components, or combinations thereof.

[0035] Terms such as "first," "second," etc., which include ordinal numbers, may be used to describe various constituent elements; however, the constituent elements are not limited to these terms. These terms are used only for the purpose of distinguishing one constituent element from others.

[0036] When a constituent element is referred to as being "connected" or "connected" to other constituent elements, it can mean that it is directly connected or connected to those other constituent elements; however, it should be understood that there may also be other constituent elements in between. Conversely, when a constituent element is referred to as being "directly connected" or "directly connected" to other constituent elements, it should be understood that there are no other constituent elements in between.

[0037] When it is mentioned that a certain constituent element is "above" or "below" other constituent elements, it should be understood that it is not only positioned directly above the other constituent elements, but other constituent elements may also exist in between.

[0038] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and should not be construed as having an ideal or overly formal meaning unless explicitly defined in this application.

[0039] Figure 1 This is a conceptual diagram of a high-voltage substrate processing apparatus according to an embodiment of the present invention.

[0040] Reference Figure 1 The high-voltage substrate processing device 100 may include: an inner cavity 110, an outer cavity 120, an air supply module 130, and an exhaust module 140.

[0041] The inner cavity 110 forms a processing space to accommodate the substrate to be processed. The inner cavity 110 can be made of a non-metallic material, such as quartz, to reduce contamination in high-temperature and high-pressure operating environments. The temperature of the inner cavity 110 can reach hundreds to thousands of degrees Celsius by operating a heater (not shown) disposed outside the inner cavity 110. The substrate can be a semiconductor substrate W mounted on a holder (see reference). Figure 2 The holder can be a wafer boat 113 (see reference) capable of stacking the substrate W to be processed into multiple layers. Figure 2 The substrate is not limited to the wafer; any basic structure used for manufacturing circuits can be used. For example, the substrate may also include glass for manufacturing displays.

[0042] The outer cavity 120 forms an internal space for accommodating the inner cavity 110. The outer cavity 120 is disposed outside the inner cavity 110. Unlike the inner cavity 110, the outer cavity 120 can be made of a metallic material because it will not contaminate the object.

[0043] The gas supply module 130 is a structure that supplies gas to the inner cavity 110 and the outer cavity 120. The gas supply module 130 has a gas supplier 131 as a gas source. The gas supplier 131 can selectively supply the inner cavity 110 with reaction gases used in heat treatment processes, such as hydrogen (H2), deuterium (D2), fluorine (F2), ammonia (NH3), chlorine (Cl2), nitrogen (N2), etc. The gas supplier 131 can also supply the outer cavity 120 with a protective gas, such as nitrogen or argon (Ar) as an inert gas. The reaction gas and the protective gas can be simply referred to as process gases. The process gas and the protective gas are supplied to the inner cavity 110 or the outer cavity 120 respectively through a reaction gas line 133 or a protective gas line 135. The protective gas supplied to the outer cavity 120 is specifically supplied to the space between the outer cavity 120 and the inner cavity 110 (protective space).

[0044] The process gas is supplied to create a pressure higher than atmospheric pressure (high pressure), for example, reaching a pressure of several to tens of atmospheres. These can be maintained at a set relationship when the pressure of the reactant gas is a first pressure and the pressure of the protective gas is a second pressure. For example, the second pressure can be set to be substantially the same as or slightly higher than the first pressure. This pressure relationship provides the advantage of preventing the reactant gas from leaking from the inner cavity 110. The second pressure can be slightly lower than the first pressure, and with this pressure relationship, the inner cavity 110 will not break under high pressure.

[0045] The exhaust module 140 is a structure for discharging the process gas. An exhaust pipe 141 is connected to the upper part of the inner cavity 110 to discharge the reaction gas. Similarly, an exhaust pipe 145 communicating with the outer cavity 120 can be provided to discharge the protective gas. Because these exhaust pipes 141 are interconnected, the reaction gas is diluted by the protective gas during the exhaust process, thereby reducing its concentration.

[0046] Reference Figures 2 to 3 Explain the fastening structure of the outer cavity 120. Figure 2 It is shown Figure 1 An exploded perspective view of the high voltage substrate processing device in its open state. Figure 3 It is shown Figure 2 A cross-sectional view of the high voltage substrate processing device in the off state.

[0047] Referring to these figures, the inner cavity 110 includes an inner shell (not shown) and an inner door 115. The inner shell forms the processing space for receiving the substrate W to be processed, and its lower portion may have an open shape. The inner door 115 has a shape that closes the open lower portion of the inner shell. The inner door 115 may have a slot shape with an overall downward opening.

[0048] When the inner door 115 descends, the processing space is opened (open state, see below). Figure 2 In the open state, the substrate to be processed is unloaded from the wafer boat 113, and a new substrate to be processed is loaded into the wafer boat 113. When the inner door 115 rises, the processing space is closed (closed state, see [reference]). Figure 3 In the closed state, and more specifically, in the tightened state described later in the closed state, the substrate W to be processed is subjected to processes such as heat treatment and deposition.

[0049] The outer cavity 120 also includes a housing 121 and an outer door 125. The housing 121 has dimensions to accommodate the inner cavity 110. The inner shell is mounted on the housing 121. The housing 121 can also be opened and closed when the outer door 125 moves. The outer door 125 is connected to the inner door 115 via a support member 119. The support member 119 has a spring support structure that elastically extends and retracts along the opening / closing direction E. The support member 119 is not limited to a spring support structure and can also be formed by other hydraulic or pneumatic support structures or heat-resistant elastic materials, etc. The opening / closing direction E is the direction in which the outer door 125 transitions between the closed state and the open state. When the housing 121 is upright, the opening / closing direction E can be the same as the height direction or the vertical direction. During the transition from the open state to the closed state, the support member 119 allows the outer door 125 to move toward the inner door 115.

[0050] The outer door 125 moves up and down together with the inner door 115 to open and close the outer casing 121. Unlike the above, the inner door 115 and the outer door 125 can be opened and closed independently without being connected.

[0051] The high-voltage substrate processing apparatus 100 may further include a fastening module 150 for fastening the housing 121 and outer door 125 in the closed state and for converting the housing 121 and outer door 125 to the fastened state. Since the inner door 115 is supported on the outer door 125 by a support member 119, the fastening module 150 also ensures that the inner door 115 is tightly attached to the inner housing. The fastening module 150 maintains the protective gas within the outer cavity 120 at the second pressure. The fastening module 150 also applies a fastening force to maintain the reactive gas within the inner cavity 110 at the first pressure.

[0052] The fastening module 150 may specifically include a support protrusion 151 and a locking protrusion 155.

[0053] The support protrusion 151 is a protrusion provided on the housing 121. As in this embodiment, the support protrusion 151 may be exposed outwardly on the outer peripheral surface of the housing 121. The outer peripheral surface may be the outer side surface of the outer cavity 120. The support protrusion 151 may be formed by protrusion from or recessed into the outer side surface. In the latter case, a first groove along the lifting direction E of the housing 121 and a second groove substantially perpendicular to the first groove may be formed. The first and second grooves define the support protrusion. The support surface 151a, described later, defines the second groove and may be located on the lower wall surface. Multiple support protrusions 151 may be arranged along the circumferential direction of the outer peripheral surface. Multiple support protrusions 151 may be arranged on the same horizontal or planar surface along the lifting direction E.

[0054] The locking protrusion 155 is a protrusion connected to the outer door 125. The locking protrusion 155 has a dimension that passes between a pair of adjacent support protrusions 151 when the outer door 125 moves in the lifting direction E. Like the support protrusions 151, there may be multiple locking protrusions 155.

[0055] The locking protrusion 155 can move while connected to the outer door 125. For example, the locking protrusion 155 can be rotatably disposed relative to the outer door 125. In an alternative embodiment, the locking protrusion 155 can rotate together with the outer door 125.

[0056] When the locking protrusion 155 moves, specifically rotates, and is positioned on the support protrusion 151, it can be supported by the support protrusion 151 (secured state). In this secured state, the bottom surface of the locking protrusion 155, i.e., the locking surface 155a, faces the top surface of the support protrusion 151, i.e., the support surface 151a, and is supported by the support surface 151a. The locking surface 155a is located at a level higher than the outer door 125. In this secured state, even under the high pressure of the process gas, the outer door 125 can remain firmly secured to the outer casing 121.

[0057] When multiple locking protrusions 155 are provided, each locking protrusion 155 can rotate individually. In contrast, the locking protrusions 155 can be integrally formed with the rotating member 157 and rotate together with it. The locking protrusions 155 can extend outwards from the outer peripheral surface of the rotating member 157. Specifically, the locking protrusions 155 can have a curved and elongated shape in cross-section to surround the support protrusion 151. The locking protrusions 155 can surround the support protrusion 151 outside the housing 121. The rotating member 157 can be configured to rotate along the rotation direction R (centered on the rotation axis C set along the lifting direction E).

[0058] The rotating member 157 can be rotatably connected to the outer door 125. The outer door 125 can have an upper plate 126 and a lower plate 127. The rotating member 157 can be disposed between the upper plate 126 and the lower plate 127. A bearing 159 can be disposed between each of the upper plate 126 and the lower plate 127 and the rotating member 157. A thrust bearing can be used as the bearing 159.

[0059] The upper plate 126 is configured to contact the outer casing 121 in the closed state. The upper plate 126 and the lower plate 127 can be connected by an additional component of the outer door 125, namely a spacer 128. The lower plate 127 can be configured at a different height than the upper plate 126. The spacer 128 can have a smaller diameter or width than the upper plate 126 and / or the lower plate 127. The spacer 128 can be formed as a separate component from the upper plate 126 and the lower plate 127, or it can be formed as a single component with one or both of them. When the upper plate 126, the lower plate 127, and the spacer 128 form a single component, the rotating component 157 can be formed by interlocking with each other after being manufactured as multiple block components and inserted into the space between the upper plate 126 and the lower plate 127 respectively.

[0060] The rotating member 157 can be configured to be approximately parallel to the outer door 125 with the spacer 128 inserted into its hollow portion 158. This type of rotating member 157 can be referred to as a rotating ring.

[0061] When the rotating ring 157 rotates in the closed state, the outer door 125 may not be linked to the rotation of the rotating ring 157. That is, when the upper plate 126 is kept in contact with the outer casing 121 via the sealing material 129, the rotating ring 157 can rotate independently of the contact state. The sealing material 129 may be an O-ring installed on the upper plate 126.

[0062] Reference Figure 4 This describes the structure of the rotating ring 157 used for rotational drive. Figure 4 It is used to describe the driver. Figure 3 A three-dimensional cross-sectional view of the structure of the rotating ring.

[0063] Further reference Figure 4 The rotating ring 157 can be driven to rotate by the drive unit 161.

[0064] The drive unit 161 may include a driven gear 163, a drive gear 164, and a motor 165. The driven gear 163 may be formed on the inner circumferential surface of the rotating ring 157. The drive gear 164 may be a gear that meshes with the driven gear 163. The drive gear 164 may be located between the rotating ring 157 and the spacer 128.

[0065] According to the aforementioned configuration, the rotational force of the motor 165 is transmitted to the drive gear 164. The transmission shaft connecting the output shaft of the motor 165 and the drive gear 164 can be configured to extend through the lower plate 127. When the drive gear 164 rotates, the driven gear 163 meshing with it also rotates. When the driven gear 163 rotates, the rotating ring 157 rotates around the axis C (…). Figure 3 Rotating around the center, therefore, the locking protrusion 155 also rotates along the direction of rotation R (refer to...). Figure 3 The locking protrusion 155 rotates. As it rotates, the locking protrusion 155 moves on or away from the support protrusion 151. During the rotation of the locking protrusion 155, the outer door 125 does not rotate with it. The power output from the motor 165 is sufficient to rotate the locking protrusion 155, excluding the outer door 125.

[0066] Although the structure of the drive unit 161, consisting of gears 163 and 164 and a motor 165, has been described, the invention is not limited thereto. Other actuators, such as cylinders, can also be used to construct the drive unit.

[0067] Further reference Figure 5 This describes the process from the open state to the tight state. Figure 5 It is used for explanation Figure 2 A flowchart of the state transition of the high voltage substrate processing device.

[0068] Further reference Figure 5 In the open state (refer to) Figure 2 The outer door 125 can rise to the outer casing 121 (S1). The outer door 125 can be raised by a lift (not shown) that operates in the opening and closing direction E.

[0069] The control module (illustration omitted) can determine whether the rise of the outer door 125 has reached the set rise amount (S3). This determination can be based on the rise amount of the elevator. Alternatively, the level of the outer door 125 can be measured, and the determination can be made based on this level.

[0070] As the outer door 125 rises, the locking protrusion 155 passes between a pair of adjacent support protrusions 151. As a result, the locking surface 155a is positioned at a level slightly higher than the support surface 151a.

[0071] If the set rise amount is reached, it can be determined that the outer door 125 has reached the closed state (S5). In the closed state, the upper plate 126 of the outer door 125 is in contact with the outer casing 121. The sealing material 129 seals the gap between the upper plate 126 and the outer casing 121. The locking surface 155a is offset from the support surface 151a and is not supported by the support surface 151a.

[0072] In the closed state, the locking protrusion 155 can rotate (S7). Specifically, when the drive unit 161 is running, the rotating ring 157 rotates around the rotation axis C ( Figure 3 The ring rotates around the center, and the locking protrusion 155 connected to the rotating ring 157 also rotates.

[0073] The control module can determine whether the rotation of the rotating ring 157 has reached the set rotation amount (S9). This determination can be based on the operating time of the drive unit 161. Alternatively, the determination can be made by measuring the position / angle of the locking protrusion 155.

[0074] When the set rotation amount is reached, it can be determined that the outer door 125 has reached the fastened state (S11). In the fastened state, the locking protrusion 155 is positioned corresponding to the support protrusion 151. The locking surface 155a is supported by the support surface 151a.

[0075] The process of moving from the fastened state through the closed state to the open state can be achieved by reversing the above steps.

[0076] Reference Figure 6 This describes another type of high voltage substrate processing apparatus 100'. Figure 6 This is a cross-sectional view showing the off state of a high-voltage substrate processing apparatus according to another embodiment of the present invention.

[0077] Reference Figure 6 The high voltage substrate processing apparatus 100' is basically the same as the high voltage substrate processing apparatus 100 according to the aforementioned embodiment, except that it includes an outer door 125', a rotating member 157' and a drive unit 161'.

[0078] The rotating member 157' may not be annular, but rather approximately disc-shaped. Specifically, the rotating member 157' may have a base portion 157'a and a protrusion 157'b. When the base portion 157'a is located below the upper plate 126, the protrusion 157'b is a portion that protrudes downward from the base portion 157'a.

[0079] A recessed receiving groove 158' may be formed in the base portion 157'a. Corresponding to the receiving groove 158', the outer door 125' may have a shaft protrusion 128' protruding downward from the upper plate 126. By rotatably receiving the shaft protrusion 128' in the receiving groove 158', the horizontal alignment between the upper plate 126 and the rotating member 157' can be maintained. In order to allow the rotating member 157' (specifically, the protrusion 157'b) to rotate smoothly relative to the shaft protrusion 128', a bearing 159' may be provided between the shaft protrusion 128' and the rotating member 157'b.

[0080] The drive unit 161' also varies depending on the structural relationship between the base portion 157'a and the protrusion 157'b. Specifically, the driven gear 163', which is a component of the drive unit 161', can be formed on the outer peripheral surface of the protrusion 157'b. The drive gear 164, connected to the motor 165, meshes with the driven gear 163'. The drive gear 164 does not pass through the outer door 125' or the rotating member 157', but can be located outside the outer door 125' and the rotating member 157'. In this specification, a processing apparatus with dual chambers is illustrated as an example of a high-voltage substrate processing apparatus 100, but the present invention is not limited thereto. A processing apparatus with a single chamber is also within the scope of the present invention. The single chamber consists of a housing and a door. A wafer substrate is disposed in the chamber, and gas for processing the wafer substrate is supplied. The fastening modules 150, 150' are also applied to the single chamber. Regardless of the gas pressure, fastening modules 150 and 150' ensure that the door is securely fastened to the housing.

[0081] Fastening modules 150 and 150' can also be applied to a semi-double chamber, which serves as an intermediate form between the double chamber and the single chamber. The semi-double chamber may have two housings (an inner housing and an outer housing) and a door. The two housings may correspond to the inner housing and outer housing 121 of the aforementioned embodiments. The two housings can be combined according to their own shapes or with additional intervening components to form a closed space (corresponding to the protective space). Similar to the aforementioned embodiments, the substrate can be arranged in the processing space of the inner housing and the reactive gas can be injected, while the protective gas can be injected into the closed space. Unlike the aforementioned embodiments, the door is not protected by the protective gas.

[0082] The door may correspond to the outer door 125 of the foregoing embodiment. The door can be used to open and close the inner shell (and the outer shell). The operation between the shell and the door is performed using the fastening modules 150, 150' of the foregoing embodiment.

[0083] This specification illustrates a batch-type processing apparatus, but the invention is not limited thereto. The invention can also be applied to a single-wafer-type processing apparatus.

[0084] Industrial availability This invention has industrial applicability in the field of manufacturing high voltage substrate processing equipment.

Claims

1. A high-voltage substrate processing apparatus, wherein, include: The inner cavity is configured to accommodate the substrate to be processed and the reaction gas supplied at a first pressure higher than atmospheric pressure; The outer cavity includes: a housing for receiving the inner cavity; and an outer door movable between a closed state in contact with the housing and an open state separated from the housing, the outer cavity being configured to receive a protective gas supplied at a second pressure set relative to the first pressure; as well as The fastening module includes: a support protrusion disposed on the housing; a rotating member rotatably disposed relative to the outer door; and a locking protrusion extending from the rotating member and disposed on the support protrusion. The outer door includes an upper plate that contacts the outer casing in the closed state.

2. The high-voltage substrate processing apparatus according to claim 1, wherein, The locking protrusion is positioned in the closed state and is supported by the support protrusion as it rotates.

3. The high-voltage substrate processing apparatus according to claim 1, wherein, The rotating component is located on the lower side of the upper plate.

4. The high-voltage substrate processing apparatus according to claim 1, wherein, The support protrusion is disposed outwardly on the housing, and the locking protrusion is bent to surround the support protrusion.

5. The high-voltage substrate processing apparatus according to claim 3, wherein, The outer door also includes a lower plate positioned at a different level from the upper plate. The rotating component is located between the upper plate and the lower plate.

6. The high-voltage substrate processing apparatus according to claim 5, wherein, The outer door also includes a spacer disposed between the upper plate and the lower plate. The rotating member includes a rotating ring formed by a hollow portion that accommodates the spacer.

7. The high-voltage substrate processing apparatus according to claim 1, wherein, The outer door also includes a seal disposed between the upper plate and the outer casing in the closed state. The locking protrusion is configured to rotate independently of the contact between the upper plate, the seal, and the housing.

8. The high-voltage substrate processing apparatus according to claim 1, wherein, The fastening module also includes a drive unit for rotating the rotating member to rotate the locking protrusion.

9. The high-voltage substrate processing apparatus according to claim 8, wherein, The driving unit includes: A driven gear is formed on the rotating member; The drive gear meshes with the driven gear; and A motor is used to rotate the drive gear.

10. The high-voltage substrate processing apparatus according to claim 1, wherein, The outer door also includes a axial protrusion projecting downwards from the upper plate. The rotating member includes a receiving groove that rotatably accommodates the shaft protrusion.

11. The high-voltage substrate processing apparatus according to claim 10, wherein, The rotating component includes: The base portion has the aforementioned receiving groove; and A protrusion is formed that protrudes downward from the base portion. The fastening module also includes a drive unit for rotating the rotating component. The driving unit includes: A driven gear is formed on the outer surface of the protrusion; The drive gear meshes with the driven gear; and A motor for rotating the drive gear.

12. A high-voltage substrate processing apparatus, wherein, include: The chamber comprises: a shell, formed to contain the substrate to be processed and process gas supplied at a pressure higher than atmospheric pressure; And the door, configured to move between a closed state where the housing is closed and an open state where the housing is open; as well as The fastening module includes: a support protrusion disposed on the housing; a rotating member rotatably disposed on the door; and a locking protrusion extending from the rotating member and disposed on the support protrusion. The door includes an upper plate that contacts the housing in the closed state. The rotating component is located on the lower side of the upper plate.

13. The high-voltage substrate processing apparatus according to claim 12, wherein, The locking protrusion is positioned in the closed state and is supported by the support protrusion as it rotates.

14. The high-voltage substrate processing apparatus according to claim 12, wherein, The locking protrusion includes a locking surface that faces the support protrusion and is located at a higher level than the door.

15. The high-voltage substrate processing apparatus according to claim 12, wherein, The process gases include reactive gases containing active gases and protective gases containing inert gases. The housing includes: An inner shell is formed to house the substrate to be processed and the reactive gas; and An outer shell that houses the inner shell, the outer shell and the inner shell being combined to form, together with the inner shell, a closed space for containing the protective gas. The door is formed to enclose the inner shell.

Images