Substrate processing apparatus for atomic layer etching

Abstract

According to one embodiment of the present disclosure, a substrate processing apparatus is disclosed. The substrate processing apparatus may include: an upper chamber for performing plasma processing on a substrate; a lower chamber for performing a heat treatment on the substrate; the microwave heat processor is used for generating microwaves into the lower cavity so as to transfer heat to the substrate; and a stage that supports the substrate and is capable of being lifted and lowered so as to be capable of moving the substrate to a predetermined position according to a process for the substrate.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method for processing a substrate using microwave for high-speed heat treatment. Background Technology

[0002] With the increasing integration of semiconductor devices, highly precise etching and deposition processes are required in semiconductor manufacturing. Therefore, a process based on atomic layer etching (ALE) and atomic layer deposition (ALD) is needed.

[0003] This atomic layer etching and atomic layer deposition process involves repeated process cycles for etching or deposition. While it can achieve more precise thickness control compared to traditional processes, it also has the disadvantage of potentially longer processing times, which can lead to decreased productivity compared to traditional processes.

[0004] On the other hand, for the various films that constitute semiconductor devices, there are those formed from a single atom such as silicon single crystal, polycrystalline silicon and copper film, and those containing multiple types of atoms such as silicon oxide film, silicon nitride film, silicon oxynitride film, metal oxide film, metal nitride film and silicon germanium film. Summary of the Invention

[0005] The problem the invention aims to solve

[0006] This disclosure provides a substrate processing apparatus and a substrate processing method that can provide uniform and precise etching while shortening the process time.

[0007] This disclosure provides a substrate processing apparatus that can provide both high-speed thermal processing and minimize size.

[0008] means for solving problems

[0009] According to an embodiment of this disclosure for solving the problems described above, a substrate processing apparatus is disclosed. The substrate processing apparatus may include: an upper chamber for performing plasma processing on a substrate; a lower chamber for performing heat processing on the substrate; a microwave thermal processor for generating microwaves into the lower chamber to transfer heat to the substrate; and a stage for supporting the substrate and capable of being raised and lowered, thereby enabling the substrate to be moved to a predetermined position according to the process for the substrate.

[0010] Alternatively, the upper chamber may include a gas supply section, including a buffer section and a spray head for plasma processing.

[0011] Alternatively, the spray head of the gas supply unit may have a structure that is inclined from the center of the substrate toward the outer edge of the substrate.

[0012] Alternatively, the spray head of the gas supply unit can supply gas to the upper chamber through at least one of an inclined hole or a buffer hole.

[0013] Alternatively, the upper chamber may include an upper plasma generating unit for generating plasma in the upper chamber.

[0014] Alternatively, the upper chamber may include a gas exhaust section on the side for discharging process gases.

[0015] Alternatively, the gas exhaust section may have a coating for maintaining plasma inside the upper chamber and preventing byproduct adsorption.

[0016] Alternatively, the gas exhaust section can be arranged symmetrically with respect to the substrate.

[0017] Alternatively, the upper chamber may be configured to have a height of 0.1 cm to 5 cm to accelerate the supply and exhaust of gas and to form plasma.

[0018] Alternatively, the substrate processing apparatus may further include a stage step that protrudes in the stage direction between the upper chamber and the lower chamber.

[0019] Alternatively, the stage step may include a sealing gasket to prevent gas exchange between the upper and lower chambers during the processing of the substrate in the upper chamber.

[0020] Alternatively, the lower chamber may include a coating on its inner surface to prevent the adsorption of byproducts or particles.

[0021] Alternatively, the substrate processing apparatus may further include a gas supply unit for supplying inert gas to the lower chamber.

[0022] Alternatively, the lower chamber can be supplied with the inert gas at a higher pressure than the upper chamber to prevent process gas from flowing into the upper chamber during the processing of the substrate in the upper chamber.

[0023] Alternatively, the microwave thermal processor may be disposed on at least one of the side of the lower chamber, the lower surface of the stage step, or the upper part of the gas supply section of the upper chamber.

[0024] Alternatively, the microwave thermal processor may include a plurality of microwave feeders that can be configured symmetrically or asymmetrically with respect to the substrate.

[0025] Alternatively, the plurality of microwave suppliers can switch between multiple microwave supply modes to generate microwaves in the lower cavity, thereby transferring heat to the substrate.

[0026] Alternatively, the various microwave supply modes may be modes in which microwaves are supplied to the lower cavity by a combination of at least one of the plurality of microwave suppliers.

[0027] Alternatively, the stage can support the substrate by electrostatic or mechanical bonding.

[0028] Alternatively, the stage may include a lower plasma generating section for generating plasma together with the upper plasma generating section or applying a bias voltage to the plasma.

[0029] Alternatively, the stage can be moved up or down via a lift, and the substrate can be supported at a first position for performing plasma processing or a second position for performing heat treatment processing.

[0030] Alternatively, the surface modification process and adsorption layer formation process of the atomic layer etching (ALE) process for the substrate can be performed in the upper chamber, and the heat treatment process of the atomic layer etching process can be performed in the lower chamber.

[0031] Alternatively, in the upper chamber, during the atomic layer etching process for the substrate, surface modification for atomic layer etching can be performed on the substrate by plasma treatment to generate a modified layer on the substrate, and in the lower chamber, heat treatment for the substrate can be performed using a microwave thermal processor to promote the formation of the modified layer.

[0032] Alternatively, in the upper chamber, an adsorption layer can be formed by gas treatment of the substrate to which the modified layer has been formed, and the modified layer and the adsorption layer can be removed by plasma treatment. In the lower chamber, a microwave thermal processor can be used to perform heat treatment on the substrate, thereby promoting the removal of the modified layer and the adsorption layer.

[0033] Alternatively, a substrate processing apparatus is disclosed. The substrate processing apparatus may include: one or more substrate processing devices; and a substrate transfer unit for transferring the substrate to one or more of the substrate processing devices; the substrate processing device includes: an upper chamber for performing plasma processing on the substrate; a lower chamber for performing heat processing on the substrate; a microwave thermal processor for generating microwaves into the lower chamber to transfer heat to the substrate; and a stage for supporting the substrate and capable of lifting and lowering, thereby enabling the substrate to be moved to a predetermined position according to the process for the substrate.

[0034] Invention Effects

[0035] This disclosure provides a substrate processing apparatus and a substrate processing method that can provide uniform and precise etching while shortening process time.

[0036] This disclosure provides a substrate processing apparatus that can provide both high-speed thermal processing and minimize size. Attached Figure Description

[0037] Figure 1 This is a conceptual diagram illustrating a substrate processing apparatus according to an embodiment of the present disclosure.

[0038] Figure 2 This diagram illustrates the lifting and lowering of a stage in a substrate processing apparatus according to an embodiment of the present disclosure.

[0039] Figure 3 This is a conceptual diagram illustrating a microwave thermal processor configured with multiple layers in a substrate processing apparatus according to an embodiment of the present disclosure.

[0040] Figure 4a This is a conceptual diagram illustrating a microwave reflection structure in a substrate processing apparatus according to an embodiment of the present disclosure.

[0041] Figure 4b An example diagram is provided to illustrate in detail the microwave reflection structure of a substrate processing apparatus according to an embodiment of the present disclosure.

[0042] Figure 5 An example diagram illustrating a spray head of a gas supply section according to an embodiment of this disclosure.

[0043] Figure 6 An example diagram illustrating the configuration of a microwave supply according to an embodiment of the present disclosure.

[0044] Figure 7 Example diagrams illustrating various combinations of microwave generation modes of a plurality of microwave feeders of a substrate processing apparatus according to an embodiment of the present disclosure.

[0045] Figure 8This is a process flow diagram illustrating, in chronological order, a series of process processes performed by a substrate processing apparatus according to an embodiment of the present disclosure.

[0046] Figure 9 A conceptual diagram illustrating a substrate processing apparatus according to another embodiment of the present invention.

[0047] Figure 10 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0048] Figures 11 to 15 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0049] Figure 16 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0050] Figure 17 A cross-sectional view of the stage of a substrate processing apparatus according to another embodiment of the present invention.

[0051] Figure 18 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0052] Figure 19 To show in magnified form Figure 18 The diagram shows part "B" of the substrate processing apparatus.

[0053] Figure 20 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0054] Figure 21 for Figure 20 A top view of the substrate processing apparatus of an embodiment.

[0055] Figure 19 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0056] Figure 22 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0057] Figure 23 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0058] Figure 24 This is an example diagram of a substrate processing apparatus including a substrate processing device according to an embodiment of the present disclosure.

[0059] Figure 25 This is an example diagram of a substrate processing apparatus including a substrate processing device according to an embodiment of the present disclosure. Detailed Implementation

[0060] Various embodiments will now be described with reference to the accompanying drawings. Various descriptions have been set forth in this specification to provide an understanding of this disclosure. However, it will be apparent that these embodiments may also be practiced without these specific descriptions.

[0061] As used in this specification, the terms "component," "module," "system," etc., refer to computer-related entities, hardware, firmware, software, combinations of software and hardware, or the operation of software. For example, a component can be, but is not limited to, a process running on a processor, a processor, an object, an executable thread, a program, and / or a computer. For example, an application running on a computer device and the computer device itself can both be components. More than one component may reside in a processor and / or an execution thread. A component may be locally located within a single computer. A component may also be distributed across two or more computers. Furthermore, these components can be executed from various computer-readable media having various data structures stored internally. For example, a component may communicate via local and / or remote processing based on signals containing more than one data packet (e.g., data from a component interacting with another component in a local system, a distributed system, and / or data transmitted with other systems via signals and networks such as the Internet).

[0062] Furthermore, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or." That is, unless otherwise specified or clearly stated from the context, "X uses A or B" is intended to indicate any of the natural inclusive substitutions. That is, "X uses A or B" applies if X uses A; or X uses B; or X uses both A and B. Additionally, the term "and / or" as used in this specification should be understood to refer to and include all possible combinations of more than one of the listed related items.

[0063] Furthermore, it should be understood that the terms "comprising" and / or "including" refer to the presence of the corresponding feature and / or constituent element, but the terms "comprising" and / or "including" should not be construed as excluding the presence or addition of more than one other feature, constituent element, and / or combination thereof. Additionally, unless otherwise specifically stated or the context clearly indicates the singular form, the singular form should generally be interpreted as "one or more" in this specification and claims.

[0064] Furthermore, the term "at least one of A or B" should be interpreted as "the case containing only A", "the case containing only B", and "the case consisting of a combination of A and B".

[0065] Those skilled in the art will further recognize that the various exemplary logic blocks, configurations, modules, circuits, units, logic, and algorithm steps described in conjunction with the embodiments disclosed herein can all be implemented by electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, various exemplary components, blocks, configurations, units, logic, modules, circuits, and steps have been broadly described above from a functional perspective. Whether such functionality is implemented in hardware or software depends on the specific application and design constraints to which the entire system is applicable. Skilled individuals will be able to implement the described functionality in various ways for each specific application. However, such determination of implementation should not be construed as departing from the scope of this disclosure.

[0066] The description of the exemplary embodiments provided is intended to enable those skilled in the art to utilize or implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art. The general principles defined herein may be applied to other embodiments without departing from the scope of this disclosure. Therefore, the invention is not limited to the embodiments set forth herein. The invention should be construed as being consistent with the widest scope of the principles and novel features set forth herein.

[0067] Figure 1 This is a conceptual diagram illustrating a substrate processing apparatus according to an embodiment of the present disclosure.

[0068] The substrate 10 processed in the substrate processing apparatus may include any semiconductor device such as a wafer, display panel, mask, or glass substrate used to manufacture semiconductor devices such as dynamic random access memory (DRAM), NAND flash memory, central processing unit (CPU), neural network processor (NPU), general-purpose graphics processor (GPGPU), and in-memory computing (PIM), but this disclosure is not limited thereto. The processes performed on the substrate 10 in the substrate processing apparatus 100 may include atomic layer etching (ALE) or atomic layer deposition (ALE).

[0069] The substrate processing apparatus 100 may include an upper chamber 1000 and a lower chamber 2000 for processing different processes. Generally speaking, the upper chamber 1000 and the lower chamber 2000 may be part of a single chamber. The substrate 10 may be moved to the upper chamber 1000 and the lower chamber 2000 by the up-and-down movement of the stage 4000, thereby performing predetermined process processing in each chamber.

[0070] A first process for substrate 10 can be performed in the upper chamber, and a second process, different from the first process, can be performed on substrate 10 in the lower chamber 2000. The process performed in the upper chamber 1000 may include gas and plasma-based processes such as surface modification and adsorption layer formation processes within the atomic layer etching process for substrate 10. The process performed in the lower chamber 2000 may include heat treatment processes within the atomic layer etching process for substrate 10.

[0071] The upper chamber 1000 and the lower chamber 2000 can also be distinguished by a platform step 1160 protruding towards the platform between the upper chamber 1000 and the lower chamber 2000. In embodiments without the platform step 1160, the upper chamber 1000 and the lower chamber 2000 can also be distinguished by being constructed from different pieces. Alternatively, the upper chamber 1000 and the lower chamber 2000 can be constructed from a single piece, but in this case, the upper chamber 1000 and the lower chamber 2000 can be distinguished based on the position of each process on the platform 4000. For example, when the platform 4000 is in a first position for performing a process in the upper chamber 1000, the upper chamber 1000 and the lower chamber 2000 can also be distinguished based on this.

[0072] The upper chamber 1000 may include a gas supply unit 1100 for supplying process gases. The gas supply unit 1100 may include a spray head 1130, a buffer unit 1120 and a gas supply line 1110, and is located in the upper part of the upper chamber 1000.

[0073] The spray head 1130 of the gas supply section may also include a structure that slopes from the center of the substrate toward the outer edge of the substrate. For example... Figure 5 As shown in (d), the spray head of the gas supply unit 1100 may include an inclined structure with a high center and a low outer edge. Figure 5 The structure of (d) is only an example. The inclined structure of the spray head 1130 may also include an inclined structure with a low center and a high outer edge, or its cross-section may also be curved.

[0074] The spray head 1130 of the gas supply section can supply process gas to the upper chamber 1000 through at least one of the inclined hole structure, buffer hole structure and straight hole structure. Figure 5 Example (a) is that the spray head orifice 1131 is an example of a buffer orifice structure. Figure 5 (b) and Figure 5 (c) is an example of a tilted hole structure for the spray head hole 1131. A buffer hole structure is a structure in which the hole size on the side closest to the substrate is different from the hole size on the opposite side, and can be a hole structure in the spray head hole 1131 that includes a portion with a buffering effect. Figure 5 The shapes of the spray head and spray head orifices shown are merely examples, and this disclosure is not limited thereto. The spray head orifice 1131 can be configured to a size that microwaves cannot penetrate.

[0075] The lower surface of the spray head 1130 of the gas supply unit may include a first microwave reflective structure 2401, which reflects microwaves generated by the microwave thermal processor 3000 toward the substrate to ensure the uniformity of the substrate.

[0076] In an embodiment where the microwave heat processor is located in the lower chamber 2000, the spray head 1130 may be made of a material that microwaves cannot penetrate. In an embodiment where the microwave heat processor is located in the upper part of the upper chamber 1000, the spray head 1130 may be made of a material that microwaves can penetrate.

[0077] The gas supply line 1110 can be connected to one or more gas cylinders to supply the process gases required for each process. The supplied process gases may vary depending on the material of the substrate being processed and / or the process formulation.

[0078] The buffer section 1120 is a region where gas can briefly linger after being supplied through the gas supply line 1110 and before passing through the spray head 1130, thereby improving the uniformity of the substrate.

[0079] The upper chamber 1000 may include an upper plasma generating unit 1150 for generating plasma 20 in the upper chamber. The upper plasma generating unit 1150 can generate plasma 20 by supplying process gas. Moreover, a bias voltage generated by the lower plasma generating unit 4200 can be applied to the plasma 20 generated by the upper plasma generating unit 1150 to accelerate the action of the plasma 20 on the substrate 10. Alternatively, plasma 20 may be generated by only activating the lower plasma generating unit 4200. In each case, the energy applied to the upper plasma generating unit 1150 or the lower plasma generating unit 4200 may vary depending on the etching target, the substrate material, and / or the process recipe.

[0080] A gas exhaust section 1140 for discharging process gases may be provided on the side of the upper chamber 1000. The gas exhaust section 1140 may be made of a material or coating 1141 used to maintain plasma inside the upper chamber 1000 and prevent the adsorption of by-products. For example, the material and coating 1141 of the gas exhaust section may be made of quartz, synthetic glass, alumina, yttrium oxide, silicon (Si), silicon carbide, etc., but this is only an example and the present disclosure is not limited thereto.

[0081] The gas exhaust section 1140 may include an exhaust section microwave reflector structure 1143. The exhaust section microwave reflector structure 1143 may be constructed of a hole of a size that microwaves cannot penetrate, thereby allowing gas to pass through but blocking microwave penetration.

[0082] The gas exhaust section 1140 may also include a substance or coating 1145 that is capable of preventing the adsorption of by-products and has etching resistance.

[0083] The gas exhaust section 1140 may include a third susceptor (not shown) for absorbing microwaves and generating heat. The third susceptor is located at the rear end of the coating 1141 in the gas exhaust line and is used to absorb microwaves and generate heat, thereby preventing the adsorption of byproducts of the coating 1141.

[0084] One or more gas exhaust sections 1140 may be provided on the side of the upper chamber 1000, and are arranged symmetrically with respect to the substrate 10 for the sake of uniformity of the substrate 10.

[0085] Although not in Figure 1 As shown in the figure, the gas discharge section 1140 may also include a suction device for accelerating gas exhaust.

[0086] To accelerate gas supply and exhaust and plasma formation, the upper chamber 1000 may be configured with a height of 0.1 cm to 5 cm during processes within the upper chamber 1000 (e.g., when the stage 4000 is in the first position). The aforementioned height of the upper chamber 1000 may refer to the distance between the lower surface of the spray head 1130 and the stage 4000, and may vary depending on the position of the stage 4000. However, this height may be the height of the stage 4000 when it is in the position for performing processes in the upper chamber 1000 (e.g., in the first position). The volume of the upper chamber 1000 may vary depending on the height of the stage 4000, and to accelerate gas supply and exhaust, the volume of the upper chamber 1000 may be configured to a minimum volume for maintaining plasma. Furthermore, depending on the process performed in the upper chamber 1000, the minimum volume required for plasma may differ from the minimum volume required for a gas-only process. In this case, the stage 4000 can be raised and lowered to optimize the volume of the upper chamber 1000 for the specific process. For example, the upper chamber 1000 can be raised and lowered via the stage 4000 to change the volume between a first volume for plasma processes, a second volume for gas processes, or a third volume for exhausting gases, thereby optimizing for each process. The aforementioned height is merely an example, and this disclosure is not limited thereto.

[0087] The substrate processing apparatus 100 may include a stage step 1160 protruding toward the stage 4000 between the upper chamber 1000 and the lower chamber 2000. The stage step 1160 can be a structure that distinguishes the upper chamber 1000 and the lower chamber 2000, allowing the diameters of the upper chamber 1000 and the lower chamber 2000 to be different. As mentioned above, the smaller the volume of the upper chamber 1000, the faster the gas supply and exhaust rates can be. Therefore, with the aid of the stage step 1160, the upper chamber 1000 can also have a smaller diameter than the lower chamber 2000.

[0088] The stage step 1160 may include a sealing gasket (not shown) to prevent gas exchange between the upper and lower chambers during substrate processing in the upper chamber. Although in Figure 1 In the example, a path for fluid flow is shown between stage step 1160 and stage 4000, but in an embodiment with a sealing gasket (not shown), when stage 4000 is in the first position ( Figure 2 In the case of the position in (a), no gas exchange occurs between the upper chamber 1000 and the lower chamber 2000 due to the sealing gasket. The sealing gasket may be a soft material or fixed in a form that can be opened and closed, so that gas can flow from the lower chamber 2000 to the upper chamber 1000 during the purging process in the upper chamber 1000.

[0089] The substrate processing apparatus 100 may include a lower chamber 2000 for performing heat treatment on the substrate. As mentioned above, the upper chamber 1000 and the lower chamber 2000 are regions within a connected chamber that are distinguished according to the process. For convenience, the first position of the stage 4000 ( Figure 2 The area below the position in (a) is described as the lower chamber 2000.

[0090] The lower chamber 2000 is used to perform heat treatment on the substrate. When heat treatment is required on the substrate during the process cycle for the substrate, the substrate 10 can be transferred by lowering the stage 4000, so that the substrate is located in the lower chamber 2000.

[0091] The inner surface 2001 of the lower chamber may include a second sensor capable of being heated by microwaves to prevent byproducts or particles from adsorbing onto the inner surface of the lower chamber. The second sensor may be made of a material capable of absorbing microwaves supplied from the microwave thermal processor and generating heat; for example, the sensor may comprise at least one of a metal film coated on ceramic or a carbon-based material. The aforementioned materials for the sensor are merely examples, and this disclosure is not limited thereto.

[0092] The second receptor can be heated by microwave during the heat treatment process in the lower chamber 2000, thereby preventing adsorption on the inner surface of the lower chamber 2000. Furthermore, during the processing of the substrate in the upper chamber 1000, microwave heating can also be used for preheating, thereby maintaining the temperature of the lower chamber 2000 at a certain level.

[0093] During the purging process of the substrate, the lower chamber 2000 can be heated by a microwave thermal processor. When the lower chamber 2000 is heated by the microwave thermal processor, the second sensor 2100 is also heated by microwaves, bringing the temperature of the lower chamber 2000 to a predetermined level, thereby preventing adsorption of the lower chamber 2000. For example, during the purging process in the upper chamber, the temperature of the heated lower chamber 2000 can differ from the heat treatment temperature or preheating temperature within the lower chamber. Although not shown, the inner surface 2001 of the lower chamber may also contain a material or coating that prevents adsorption of at least one of the byproducts or particles.

[0094] The substrate processing apparatus 100 may include an inert gas supply unit 2200 for supplying inert gas to the lower chamber. The inert gas supplied by the inert gas supply unit 2200 may be discharged through the gas discharge unit 1140 of the upper chamber.

[0095] The inert gas supply unit 2200 can supply inert gas to make the lower chamber 2000 have a higher gas pressure than the upper chamber 1000, thereby preventing the process gas in the upper chamber from flowing into the lower chamber during the process of the substrate 10 being processed in the upper chamber. When a process using gas is performed in the upper chamber 1000, the inert gas supply unit can supply inert gas to make the lower chamber 2000 reach a first pressure higher than that of the upper chamber 1000.

[0096] Furthermore, according to an embodiment, the substrate processing apparatus 100 may further include an inert gas discharge section (not shown) for discharging inert gas. The inert gas supply section 2200 and the inert gas discharge section (not shown) may also be configured as gas lines independent of the gas supply section 1100 and the gas discharge section 1140 of the upper chamber. The inert gas supply section 2200 and the inert gas discharge section (not shown) may be located on the side or lower surface of the lower chamber. For example, the inert gas supply section 2200 and the inert gas discharge section (not shown) may also be located on the side or lower surface of the lower chamber.

[0097] The inert gas supply unit 2200 can supply inert gas to make the lower chamber 2000 have a higher gas pressure than the upper chamber 1000, thereby preventing the process gas in the upper chamber from flowing into the lower chamber during the process of the substrate 10 in the upper chamber. In other embodiments using an inert gas exhaust unit, the inert gas exhaust unit (not shown) can be closed during the process of the upper chamber 1000, and inert gas can be supplied through the inert gas supply unit 2200 to make the pressure in the lower chamber higher than that in the upper chamber 1000. Alternatively, the inert gas exhaust unit (not shown) can be opened to allow the inert gas to circulate instead of stagnating in the lower chamber 2000, while simultaneously increasing the supply pressure of the inert gas supply unit 2200 to make the pressure in the lower chamber higher than that in the upper chamber 1000.

[0098] Furthermore, the inert gas supply unit 2200 and the inert gas discharge unit (not shown) can also operate according to the process performed in the upper chamber 1000. For example, in a purging process to remove process gas from the upper chamber 1000, the inert gas discharge unit (not shown) can be closed, and exhaust can be performed only through the gas discharge unit 1140 on the side of the upper chamber 1000. Also, for example, during the purging process in the upper chamber 1000, the inert gas supply unit 2200 can supply inert gas at a second pressure. In this case, during the purging process of the upper chamber 1000, the second pressure of the inert gas supplied can be higher than the pressure (i.e., the first pressure) in the lower chamber 2000 during the process in which gas is used in the upper chamber 1000.

[0099] The inert gas supply unit 2200 can also supply inert gas to regulate the temperature of the lower chamber 2000. For example, after a heat treatment process of the lower chamber 2000, if it is desired to cool the lower chamber 2000 to a suitable temperature, inert gas can be supplied by the inert gas supply unit 2200 and discharged through the gas discharge unit 1140, thereby cooling the lower chamber. Furthermore, in other embodiments where an inert gas discharge unit is used in the lower chamber, the inert gas supplied by the inert gas supply unit 2200 can also be discharged through the inert gas discharge unit (not shown) of the lower chamber, thus cooling the lower chamber. By regulating the temperature of the lower chamber 2000 in this way, the waiting time between process cycles can be reduced, thereby improving productivity.

[0100] The inner surface 2001 of the lower cavity 2000 may include a second microwave reflective structure 2400, which reflects microwaves generated by the microwave thermal processor 3000 toward the substrate. Referring below... Figure 4a and Figure 4b The microwave reflection structure is explained. Figure 4a The position and number of the second microwave reflective structure 2400 shown are merely examples, and this disclosure is not limited thereto. Figure 4a The second microwave reflective structure 2400 shown includes reflective structures that are different from each other, but may also include reflective structures that are the same as each other. Figure 4a Although not shown in the figure, the second microwave reflective structure 2400 can also move up and down, or adjust the angle of the reflective surface. The second microwave reflective structure 2400 can also be designed for easy assembly and disassembly, allowing for replacement according to the process or formulation. Although not shown in the figure, the second microwave reflective structure 2400 can be adjusted in orientation, such as raising and lowering, moving horizontally, and rotating, using a second microwave reflective structure driving unit. By using the second microwave reflective structure driving unit, the second microwave reflective structure is driven, changing its position or orientation, thereby allowing for diverse adjustments to the microwave transmission mode transmitted to the substrate 10. The second microwave reflective structure driving unit can adjust the reflective surface to a predetermined position or orientation according to the microwave supply mode of the microwave thermal processor.

[0101] The second microwave reflective structure 2400 may include a reflective surface 2410, which is configured to form an angle of 15 to 75 degrees relative to the inner surface of the lower cavity. Figure 4b In the example, the angle of A2 can be from 15 degrees to 75 degrees. As mentioned above, the second microwave reflecting structure can reflect microwaves to the substrate 10 or the stage 4000 on which the substrate is located. Depending on the placement of the second microwave reflecting structure 2400 and the position of the substrate 10, it can have an appropriate tilt angle for reflecting microwaves to the substrate. The microwave reflecting structure can be configured as a triangle. The microwave reflecting structure may include a curved structure with curvature in the tip portion 2420 to prevent arcing. For example, the radius of curvature R1 of the tip portion 2420 is preferably designed to be 100 μm or more, more specifically, it can be 500 μm or more. The second microwave reflecting structure 2400 may include multiple reflecting structures along the vertical direction of the inner side surface 2001 of the lower cavity, and each reflecting structure may also extend in a ring shape along the circumference of the lower cavity. The second microwave reflecting structure 2400 may include multiple reflecting structures, wherein the reflecting surface of some reflecting structures may be configured to have a different tilt angle than other reflecting structures. For example, the second microwave reflector located on the edge of the upper surface of the lower chamber can also be designed to have a gentler tilt angle than the second microwave reflector located on the lower side.

[0102] Although not shown in the figure, the lower inner surface of the lower chamber may also have a shape designed to account for microwave reflection. For example, the lower inner surface of the lower chamber 2000 may also have a curved reflective structure.

[0103] The microwave heat processor 3000 can generate microwaves into the lower cavity 2000 and transfer heat to the substrate 10. The microwave heat processor 3000 can be disposed at at least one of the following locations: the side of the lower cavity 2000, the lower surface of the stage step 1160, or the upper part of the gas supply section 1100 of the upper cavity. Figure 1 This is an example of a microwave heat processor 3000 disposed on the side of the lower cavity. Since vacuum processes can also be performed within the cavity, the location where the microwave heat processor 3000 is attached to the cavity can be made of a material capable of penetrating microwaves (e.g., ceramic, quartz, Y₂O₃, Al₂O₃, mica, glass, acrylic, etc.). In another embodiment of the invention, heat processors of other types than microwaves can be used in the substrate processing apparatus of the invention. For example, infrared lamps (IRlamp), flash lamps, lasers (LASER), electron beams (E-beam), plasma, microwaves, etc., can be used as heat sources for the heat processors of the substrate processing apparatus of the invention, and the same or different heat sources can be combined.

[0104] The microwave thermal processor 3000 can heat the substrate to the process temperature more quickly by microwave heating, and can also lower the substrate temperature to the process temperature more quickly by interrupting the microwave supply, utilizing the cooling of the stage 4000, and circulating inert gas. By utilizing high-speed microwave thermal processing, the substrate processing apparatus of one embodiment of this disclosure can reduce the cycle time required for atomic layer etching processes and provide high-speed atomic layer etching processes, thereby increasing UPH (unit per hour). This overcomes the productivity limitations of existing atomic layer etching or atomic layer deposition methods.

[0105] The microwave heat processor 3000 may include multiple microwave suppliers 3100. By supplying multiple microwaves from the multiple microwave suppliers 3100, the heating time required can be freely adjusted according to the formula, and the uniformity of the substrate can be increased, thereby improving the reliability of the substrate processing apparatus. The multiple microwave suppliers 3100 can be arranged symmetrically or asymmetrically with respect to the substrate. Figure 6 (a) and Figure 6 (b) is an example diagram showing the configuration of multiple microwave suppliers 3100. Figure 6 (a) and Figure 6 As shown in (b), the chamber of the substrate processing apparatus 100 can be triangular or circular. A plurality of microwave feeders 3100 can be disposed at the edge of the chamber to supply microwaves in a manner that surrounds the substrate.

[0106] Each microwave supply 3100 may include known structures capable of supplying microwaves. For example, each microwave supply 3100 may be composed of a magnetron, waveguide, cooling module (e.g., cooling fan or cooling flow path), transformer, capacitor, diode, etc. The foregoing are merely examples, and may also include any known structures.

[0107] The microwave heat processor 3000 can be composed of more than one layer 3001, 3002. Figure 1The example illustrates an embodiment where the microwave thermal processor consists of a single layer. Figure 3 The example shown illustrates an embodiment where the microwave heat processor 3000 consists of two layers. Although not shown, the microwave heat processor 3000 can also consist of three layers, and the structure of multiple microwave heat processors 3000 can be arbitrarily determined according to requirements such as process temperature and heating time, as well as constraints such as the volume of the microwave supply and the height of the chamber. In... Figure 3 As shown in the example, in the case of a two-layer microwave thermal processor, the microwave suppliers can be stacked co-located layer by layer, or the microwave suppliers in each layer can be arranged in an alternating pattern. For example, the microwave supplier 3002 in the lower second layer and the microwave supplier 3001 in the upper first layer can be configured with the same x-axis and y-axis but different z-coordinates, or they can be configured in a zigzag pattern with different x-axis and y-axis. By configuring multiple microwave suppliers, the uniformity of the substrate can be ensured, and the microwave output supplied by multiple microwave suppliers can be controlled, thereby reducing the process temperature reach time and enabling more precise thermal control.

[0108] The microwave thermal processor 3000 may include a microwave controller 3200, which can control the microwave generation mode of each of a plurality of microwave suppliers 3100 by independently driving each of them. The plurality of microwave suppliers 3100 can be controlled by the microwave controller 3200 to switch between various microwave supply modes, thereby generating microwaves in the lower cavity and transferring heat to the substrate 10. The various microwave supply modes may be modes that supply microwaves to the lower cavity by combining at least one of the plurality of microwave suppliers. The microwave controller 3200 can control each of the plurality of microwave suppliers according to a predetermined microwave supply mode, or according to at least one of the temperature distribution of the substrate or the temperature distribution of the lower cavity measured during the process of processing the substrate. The microwave controller 3200 can control the microwave suppliers to supply microwaves according to a predetermined mode based on a formula or process, or it can control the microwave supply based on data measured by sensors or the like during process execution. The microwave controller 3200 can determine the power of each microwave supply or the number of microwave supplies used to supply microwaves based on at least one of the process target temperature and the time to reach the process target temperature. When faster heating is required, the microwave controller 3200 can increase the output power of each microwave supply or increase the number of operating microwave supplies, thereby increasing the heating rate for heat treatment. Because it includes multiple microwave supplies, the heating for the process can be controlled more precisely, and heat can be supplied to the substrate more uniformly, thereby improving both substrate productivity and uniformity.

[0109] Figure 7Example diagrams illustrating various combinations of microwave generation modes of the plurality of microwave feeders 3100 of the substrate processing apparatus according to embodiments of the present disclosure. Figure 7 (a) to (n) show the microwave generation modes of multiple microwave feeders arranged in order along the circumference of the lower chamber.

[0110] The microwave controller 3200 can control the microwave thermal processor according to at least one of the following supply modes: a first supply mode, simultaneously driving multiple microwave suppliers 3100; a second supply mode, sequentially driving multiple microwave suppliers according to a predetermined pattern; a third supply mode, sequentially driving microwave suppliers in a manner that simultaneously drives a pair of opposing microwave suppliers among the multiple microwave suppliers; a fourth supply mode, sequentially driving microwave suppliers in a manner that simultaneously drives multiple pairs of opposing microwave suppliers among the multiple microwave suppliers; a fifth supply mode, sequentially driving all microwave suppliers in a manner that simultaneously drives at least a portion of adjacent microwave suppliers among the multiple microwave suppliers; or a sixth supply mode, controlling at least a portion of the multiple microwave suppliers according to the temperature distribution of the substrate or the lower cavity. Furthermore, the microwave controller 3200 can control the microwave thermal processor according to at least one of the following supply modes: a seventh supply mode, controlling multiple microwave suppliers configured in multiple layers layer by layer according to at least one of the first to sixth supply modes; an eighth supply mode, integrating all layers to control multiple microwave suppliers configured in multiple layers according to at least one of the first to sixth supply modes; or a ninth supply mode, using only at least a portion of the layers of the multiple microwave suppliers configured in multiple layers. For example, during the process performed on the substrate 10 in the upper cavity 1000, if it is necessary to preheat the lower cavity 2000, the lower cavity 2000 can also be preheated using microwave suppliers from a portion of the multiple layers.

[0111] Figure 7 The microwave generation mode shown is merely an example, and this disclosure is not limited thereto. Various modifications can be made to the microwave generation mode to uniformly, efficiently, and rapidly transfer the appropriate level of heat for the reaction to the substrate 10. Figure 7 The illustration shows an example of multiple microwave generation modes changing sequentially over time, but it is also possible to use a single microwave generation mode to drive multiple microwave feeders, or to repeat two or more microwave generation modes to drive microwave feeders. In the embodiments of this disclosure, the heat supply to the substrate via multiple microwave feeders can be adjusted quickly, precisely, and uniformly. Furthermore, since it is not necessary to use multiple microwave feeders to rotate and drive the stage or microwave thermal processor, the manufacturing cost and maintenance / repair cost of the process equipment can be reduced, and the size of the process equipment can be reduced, allowing for higher integration and thus achieving a space-efficient process.

[0112] At least one of the multiple microwave suppliers 3100 can supply microwaves at frequencies different from those of the other suppliers. For example, while the multiple microwave suppliers 3100 can supply microwaves of the same frequency (e.g., 2.45 GHz), at least some of the microwave suppliers 3100 can also generate microwaves of different frequencies (e.g., 2.5 GHz, 2.4 GHz, etc.). By making some of the microwave suppliers have different frequencies, the effects of constructive and destructive interference of the microwaves generated by the multiple microwave suppliers 3100 can be reduced, and thermal imbalance of the substrate due to such interference can be prevented.

[0113] The stage 4000 can support the substrate 10 and lift it up and down, and can move the substrate to a predetermined position according to the process for the substrate. Figure 2 Example (a) is an example of stage 4000 being positioned in a first position for process handling in the upper chamber of the substrate. Figure 2 Example (b) is an example where the stage 4000 is positioned in a second position for process handling in the lower chamber of the substrate. Figure 2 Example (c) is an example of the stage being positioned in a third position for introducing or removing the substrate. As previously mentioned, the first position is for the process in the upper chamber 1000, for example, it could be a position where the stage 4000 is spaced 0.1 cm to 5 cm from the lower surface of the spray head 1130. However, the aforementioned numerical range is merely an example. The first position is the position required for the optimal volume of the upper chamber 1000 for the process in the upper chamber 1000, and this disclosure is not limited thereto. When the stage 4000 is in the third position, the substrate 10 can be separated from the stage by introducing the pin 2002 into the pin hole 4600 of the stage. Furthermore, Figure 2 Although not shown, the stage 4000 can also be raised to a position 0 above the first position via a lift and used to support the substrate. For example, the position 0 may be a position where it is necessary to reduce the volume of the upper chamber. In order to perform a purging process in the upper chamber, the stage 4000 is raised from the first position to the position 0 via the lift 4400, thereby reducing the volume of the upper chamber and enabling rapid gas exhaust.

[0114] The stage 4000 can be moved up or down via the elevator 4400, and can be moved to a first position for the process in the upper chamber 1000 or a second position for the process in the lower chamber.

[0115] If the substrate is moved to the upper chamber by the stage 4000, the surface modification process and adsorption layer formation process during the atomic layer etching process for the substrate can be performed in the upper chamber. If the substrate is moved to the lower chamber by the stage 4000, the heat treatment process during the atomic layer etching process can be performed.

[0116] The stage 4000 can support the substrate via electrostatic bonding or mechanical bonding. For example, when performing a process in a vacuum state in an upper or lower chamber, the stage 4000 can support the substrate via electrostatic bonding. In this case, the stage 4000 may include a power supply line 4700 for electrostatic bonding. Alternatively, the stage 4000 can support the substrate via vacuum bonding or mechanical bonding such as chuck pins.

[0117] The stage 4000 may also include a lower plasma generating unit 4200 for generating plasma. The lower plasma generating unit 4200 may include electrodes for generating plasma or providing a bias voltage. The electrodes may be located on the stage 4000. As described above, the lower plasma generating unit 4200 may generate plasma 20 and apply a bias voltage to plasma 20.

[0118] The stage 4000 may include a first sensor 4100 that heats up by microwaves and transfers heat to the substrate. The first sensor 4100 may comprise at least one of a metal film coated on ceramic or a carbon-based material to heat up in response to microwaves. For effective microwave heating, the concentration of the carbon-based material in the sensor is preferably 0.5% by weight or more, and for the metal film, its thickness is preferably 800 μm or less. The foregoing description is merely illustrative and this disclosure is not limited thereto. By utilizing the heating effect of the first sensor, heat can be transferred to the substrate 10 more effectively, thereby reducing the time required for heat treatment. The stage 4000 may also include a protective film covering the first sensor 4100. For example, the protective film may be composed of quartz, synthetic glass, alumina, yttrium oxide, Si, SiC, etc. The foregoing description is merely illustrative and this disclosure is not limited thereto.

[0119] The stage 4000 may include a refrigerant flow path 4300 capable of adjusting the stage temperature. Furthermore, refrigerant can be supplied through the refrigerant flow path 4300 to enable low-temperature processing for etching various materials. Refrigerant can be supplied through the refrigerant flow path 4300 at a predetermined flow rate to cause the substrate temperature to decrease at a predetermined rate. The flow rate of the refrigerant supplied through the refrigerant flow path 4300 is controlled according to the rate at which the substrate temperature is to be adjusted. The refrigerant flow path 4300 supplies refrigerant from outside the substrate processing apparatus 100 via a refrigerant supply line 431. For faster substrate cooling, a lower-temperature refrigerant or a rapid refrigerant supply can be supplied through the refrigerant flow path; for slower substrate cooling, a high-temperature refrigerant or a slow refrigerant supply can be supplied through the refrigerant flow path. The refrigerant supplied through the refrigerant flow path can be controlled according to the process formulation or process requirements. Refrigerant can be supplied to the refrigerant flow path 4300 before, during, or after the heat treatment process for the substrate. For example, the refrigerant flow path 4300 can supply refrigerant during the heat treatment process of the substrate, thereby allowing the substrate temperature to decrease at a predetermined rate after the heat treatment process. As mentioned above, in the atomic layer etching process, the heat treatment rate can be a factor determining the process speed. By supplying refrigerant through the refrigerant flow path, the substrate 10 supported by the stage 4000 can be cooled more quickly, thereby increasing the process speed. This refrigerant supply can be initiated during the heat treatment process. When the refrigerant supply begins, the microwave thermal processor can increase the microwave supply to maintain the refrigerant supply and thermal balance (e.g., by performing control actions such as increasing the number of operating microwave suppliers or increasing the microwave intensity via the microwave controller). Then, by stopping the microwave supply after the heat treatment process is completed, the substrate temperature can decrease more quickly, thereby shortening the process time. The refrigerant supply and microwave controller of the stage 4000 can operate in conjunction as described above. The temperature of the refrigerant supplied to the stage 4000 can be, for example, -80°C to 30°C, but this disclosure is not limited to this; refrigerants of various temperatures can be supplied for high-speed heat treatment.

[0120] The stage 4000 may include a baffle 4500 located at the edge of the stage for regulating gas flow between the upper and lower chambers when the substrate is in the upper chamber. The baffle 4500 includes a baffle hole 4510 through which gas can flow. When the stage 4000 is in a first position, the baffle 4500 may contact or separate from the stage step 1160. In embodiments where the baffle 4500 contacts the stage step 1160 and the baffle hole 4510 is not present, gas flow between the upper chamber 1000 and the lower chamber 2000 may be blocked.

[0121] In the following text, reference will be made to Figure 8A substrate processing method performed in a substrate processing apparatus is described.

[0122] As described above, the substrate processing apparatus can perform atomic layer etching and atomic layer deposition on the substrate. The substrate 10 can be processed by moving back and forth between the upper chamber 1000 and the lower chamber 2000 via a stage.

[0123] The substrate 10 can be introduced into the chambers 1000 and 2000 through the gate 2300 on one side of the lower chamber. The substrate 10 introduced into the lower chamber 2000 can be transferred to the first position of the upper chamber 1000 through the stage.

[0124] The process for transferring the substrate 10 to the first position via the stage 4000 can be performed in the upper chamber 1000. Surface modification treatment of the substrate for atomic layer etching can be performed in the upper chamber 1000. For the surface modification treatment, a first process gas can be supplied to the upper chamber 1000. As mentioned above, the upper chamber 1000 has an optimized volume, thus reducing the amount of first process gas supplied and shortening the time required to supply the first process gas.

[0125] When the first process gas is supplied and plasma 20 is generated through plasma generation units 1150 and 4200, the surface of substrate 10 can be modified to form a modified layer 11 that can react with the precursor.

[0126] After the surface modification step, a purging process for removing the first process gas and byproducts from the upper chamber 1000 can be performed through the gas exhaust section 1140 on the side of the upper chamber. To accelerate the purging process, the stage 4000 can be moved to a position 0 above the first position, thereby reducing the volume of the upper chamber 1000. Furthermore, the inert gas supply section 2200 of the lower chamber 2000 can supply inert gas at a second pressure, thereby accelerating the purging process of the upper chamber 1000. The inert gas exhaust section (not shown) of the lower chamber can also be closed to prevent byproducts of the modification process from flowing into the lower chamber 2000.

[0127] A second process gas can be supplied to the substrate in the upper chamber where a surface modification treatment has been performed to perform an adsorption layer formation process for forming an adsorption layer 12 on the substrate. In this case, in order to form an adsorption layer or for a smooth reaction, a bias voltage can also be applied through the plasma generation units 1150 and 4200, and plasma 20 can also be generated in the upper chamber 1000 if necessary.

[0128] After the adsorption layer formation process, a purging process for removing the second process gas and byproducts from the upper chamber can be performed through the gas discharge section 1140 on the side of the upper chamber. As described above, the purging process after the surface modification process can include the operation of the stage, the inert gas supply section, and the inert gas discharge section for accelerating gas purging.

[0129] Before or after performing this surface modification process and adsorption layer formation process, if it is necessary to heat the substrate, the substrate can be transferred to the lower chamber 2000 using the stage 4000 and heated by the microwave thermal processor 3000. If the process temperature required by the substrate processing apparatus 100 is below a certain level, the substrate 10 can also be positioned in the first position of the upper chamber 1000, and the lower chamber 2000 can be heated by the microwave thermal processor 3000 in the lower chamber, thereby transferring heat to the substrate 10.

[0130] Furthermore, during the process in the upper chamber, the lower chamber 2000 can be preheated by a microwave thermal processor 3000. In this case, the preheating temperature can be a first process temperature lower than the temperature at which the substrate is heat-treated in the lower chamber 2000 (i.e., the second process temperature). As mentioned earlier, during the purge process in the upper chamber, the lower chamber 2000 can be heated by microwaves. The temperature used to prevent adsorption in the lower chamber during the purge process of the upper chamber can be a third process temperature. The third process temperature is simply a temperature different from the first and second process temperatures, and does not necessarily mean a temperature higher than the second process temperature.

[0131] The substrate 10 with the adsorption layer 12 formed thereon can be transferred to a second position in the lower chamber via the stage 4000 for heat treatment, thereby enabling atomic layer etching of the substrate. Since the bonding force between the modified layer 11 on the substrate surface and the adsorption layer 12 is stronger than the energy required to remove the layer 13 adsorbed on the substrate, the modified layer 11 on the substrate surface can be removed together with the adsorption layer of the process gas, and the substrate can be etched.

[0132] In the etching process, multiple microwave suppliers of the microwave thermal processor 3000 can provide microwaves to heat the substrate, enabling efficient etching / removal of the substrate. To perform the heat treatment, the substrate 10 can be moved from a first position to a second position on a stage. In this case, the substrate processing apparatus 100 can also supply microwaves using the microwave thermal processor 3000 to preheat at least one of the substrate 10 or the lower chamber 2000 during the transfer of the substrate from the first position to the second position.

[0133] In order to perform the etching / removal process, at least one of the inert gas exhaust section (not shown) of the lower chamber 2000 or the gas exhaust section 1140 of the upper chamber 1000 may be subjected to negative pressure to remove process byproducts.

[0134] After performing heat treatment on the substrate, the substrate processing apparatus 100 can perform a cooling step of supplying refrigerant to the stage 4000 and adjusting the substrate to a temperature lower than the heat treatment temperature. As mentioned above, the refrigerant supply can be performed after or during the heat treatment process. If it is performed during the process, in order to maintain the heat treatment temperature, the microwave thermal processor 3000 can be activated to achieve thermal equilibrium with the supplied refrigerant.

[0135] Furthermore, if it is necessary to lower the temperature of the lower chamber 2000 after performing heat treatment on the substrate, as mentioned above, the temperature of the lower chamber 2000 can be adjusted by means of the inert gas flow based on the inert gas supply section 2200 and the inert gas discharge section 2300, thereby accelerating the process cycle.

[0136] The substrate processing apparatus 100 can repeatedly perform etching process cycles including the surface modification process, adsorption layer formation process, and heat treatment process as described above, until the etching target is achieved.

[0137] The substrate that has achieved the etching target can be transferred to a third position and sent out of the substrate processing apparatus 100.

[0138] Figure 9 A conceptual diagram illustrating a substrate processing apparatus according to another embodiment of the present invention.

[0139] Figure 9 An embodiment illustrates a substrate processing apparatus 10000 with a dual-chamber configuration. (Refer to...) Figure 9 The substrate processing apparatus 10000 may include: a first process chamber 11000, a second process chamber 12000, and a substrate transfer device 1300 for transferring the substrate 10 between the first process chamber 11000 and the second process chamber 12000.

[0140] The first process chamber 11000 may be a process chamber for performing a first process processing on the substrate 10. For example, the substrate 10 processed by the substrate processing apparatus 100 may include wafers for manufacturing semiconductor devices such as DRAM, NAND flash memory, and CPU; display panels such as liquid crystal display (LCD) panels and organic light-emitting diode (OLED) panels; and various substrates such as masks and glass substrates, but is not limited to the types of substrates listed.

[0141] For example, the first process performed in the first process chamber 11000 may include: modification in atomic layer etching (ALE), adsorption in ALE, removal in ALE, plasma deposition in atomic layer deposition (ALD), and thermal curing in ALD, etc., but may also include other processes that require heat treatment.

[0142] As an example, the first process chamber 11000 may be a reaction chamber used during an ALE process cycle that repeatedly performs cycles of modification / modification processes, purging processes, removal processes, and purging processes to modify the surface of the substrate 10 by plasma treatment, an adsorption process that supplies process gas into the reaction chamber and adsorbs the treatment precursor on the substrate surface, or a removal process that removes the layer attached to the substrate surface.

[0143] The first process performed in the first process chamber 11000 can be performed at a first process temperature. The first process temperature can be a process temperature optimized and set for the first process of the substrate 10 (e.g., modification / adsorption process or adsorption process, etc.). The first process temperature can be set to a temperature that enables the exposed surface layer of the substrate 10 to effectively adsorb precursors, depending on the type of material constituting the substrate 10, the type of precursor gas, etc. The first process temperature does not necessarily refer to a specific temperature value, but rather encompasses the meaning of a process temperature range, a process temperature profile, or its statistical processing value (e.g., average value), etc.

[0144] The second process chamber 12000 can be a process chamber for performing a second process processing on the substrate 10. The second process processing can be a process different from the first process processing. The second process processing performed in the second process chamber 12000 can be performed at a second process temperature different from the first process temperature at which the first process processing is performed. This is because the process temperature suitable for the second process processing is different from the process temperature suitable for the first process processing.

[0145] Therefore, the first process chamber 11000 and the second process chamber 12000 can perform the processing of the substrate 10 at different process temperatures. As an example, the second process chamber 12000 can be a reaction chamber in the ALE process that performs a modification / modification process to modify the surface of the substrate 10 by plasma treatment or a removal process to remove (desorb) layers adsorbed on the surface of the substrate 10 (e.g., adsorbed layers formed on the substrate surface by the reaction of silicon and gases or precursors).

[0146] The second process temperature can be a process temperature optimized for a second process treatment (e.g., a removal process) of the substrate 10. The second process temperature can be set according to the type of material constituting the substrate 10, the type of gas, or the type of precursor. For example, if the second process treatment is a removal process, the second process temperature can be set to a temperature at which the adsorbed layer can be effectively removed from the surface layer of the substrate 10. The second process temperature does not necessarily refer to a specific temperature value, but rather encompasses the meaning of a process temperature range, a process temperature profile, or its statistical processing value (e.g., an average value).

[0147] The first process chamber 11000 may include a first reaction chamber 11100, a first stage 11200, a first stage drive unit 11300, and a microwave thermal processor 11400. The first reaction chamber 11100 may be configured to accommodate the first stage 11200, the first stage drive unit 11300, and the microwave thermal processor 11400. Although not shown, it may include a gas supplier (not shown) for supplying first process gases such as precursor gases to the first reaction chamber 11100, and an exhaust device for performing purging treatment to remove residual gases from the first reaction chamber 11100.

[0148] In one embodiment, the interior of the first reaction chamber 11100 may be provided as a liner. For example, the liner may be made of quartz, synthetic glass, alumina, yttrium oxide, Si, SiC, etc., but this is only an example; it may also be made of other materials or such materials coated on a surface. The first reaction chamber 11100 may include a first upper chamber 11110 and a first lower chamber 11120 disposed below the first upper chamber 11110. The first upper chamber 11110 may be a chamber for performing a first process treatment on the substrate 10. The first lower chamber 11120 may be disposed below the first upper chamber 11110 and provide space for the first stage 11200 to descend. To reduce the consumption of supplied gas and to facilitate rapid reaction, the vertical width of the first upper chamber 11110 may be configured to be within approximately 3 mm to 15 cm, and is preferably designed to be as thin as possible.

[0149] The first stage 11200 can be used to support the substrate 10. A first heat processor 11210 may be provided on the first stage 11200. The first heat processor 11210 can uniformly maintain the temperature of the substrate 10. The first heat processor 11210 can adjust the temperature of the substrate according to each region (e.g., concentrically divided regions) by adjusting the temperature or flow rate of the refrigerant (cooling water), or uniformly adjust the temperature of the substrate 10 by other cooling methods.

[0150] The first stage drive unit 11300 can drive the first stage 11200 to move up and down. When the first stage 11200 is in a lowered state, the substrate 10 is moved through the first inlet and outlet 13100 by the substrate transfer device 13000 and placed on the first stage 11200. Then the first stage drive unit 11300 can drive the first stage 11200 to rise towards the first upper chamber 11110.

[0151] After performing the first process processing on the substrate 10, the first stage drive unit 11300 can drive the first stage 11200 to descend towards the first lower chamber 11120 for subsequent second process processing. Then, the substrate 10 supported by the first stage 11200 is transferred to the second process chamber 12000 for performing the second process processing via the substrate transfer device 13000 through the first inlet / outlet 13100 and the second inlet / outlet 13200.

[0152] To achieve high-speed heat treatment, the microwave heat processor 11400 can generate microwaves within the first reaction chamber 11100 and transfer heat to the substrate. The microwave heat processor 1140 can generate microwaves for a set time (e.g., a time between approximately 0.1 seconds and 30 seconds) to perform high-speed heat treatment. In one embodiment, the microwave heat processor 1140 can also be configured to generate microwaves at a frequency of 2.45 GHz corresponding to a reference microwave frequency, but the microwave frequency can also be varied. The microwave heat processor 11400 is as described above.

[0153] The second process chamber 12000 may include a second reaction chamber 12100, a second stage 12200, a second stage drive unit 12300, and a plasma processor 12400. The second reaction chamber 12100 may be configured to accommodate the second stage 12200, the second stage drive unit 12300, and the plasma processor 12400. Although not shown, it may include a gas supplier (omitted from the figure) for supplying the second process gas for generating plasma to the second reaction chamber 12100, and an exhaust device for performing a purging process to remove residual gas from the second reaction chamber 12100.

[0154] In one embodiment, the second reaction chamber 12100 may include a second upper chamber 12110 and a second lower chamber 12120 disposed below the second upper chamber 12110. The second upper chamber 12110 may be a chamber for performing a second process treatment on the substrate 10. The second lower chamber 12120 may be disposed below the second upper chamber 12110 to provide space for the second stage 12200 to descend. To reduce the consumption of supplied gas and to accelerate the reaction, the vertical width of the second upper chamber 12110 may be configured within a range of approximately 3 mm to 15 cm, and is preferably designed to be as thin as possible.

[0155] The second stage 12200 can be used to support the substrate 10. A second heat processor 12210 may be provided on the second stage 12200. The second heat processor 12210 can uniformly maintain the temperature of the substrate 10. The second heat processor 12210 can adjust the temperature of the substrate according to different areas (e.g., areas divided into concentric circles) by adjusting the temperature or flow rate of the refrigerant (cooling water), or uniformly adjust the temperature of the substrate 10 by other cooling methods.

[0156] The second stage drive unit 12300 can drive the second stage 12200 to rise and fall. When the second stage 12200 is in a lowered state, the substrate 10 is moved through the second inlet and outlet 13200 by means of the substrate transfer device 13000 and placed on the second stage 12200. The second stage drive unit 12300 can drive the second stage 12200 to rise towards the second upper chamber 12110.

[0157] After performing the second process processing on the substrate 10, the second stage drive unit 12300 can drive the second stage 12200 to descend towards the second lower chamber 12120 for subsequent process processing (the first process processing in the first process chamber). Then, the substrate 10 supported by the second stage 12200 is transferred to the first process chamber 11000 for performing the first process processing via the substrate transfer device 13000 through the second inlet / outlet 13200 and the first inlet / outlet 13100.

[0158] The first platform drive unit 11300 and / or the second platform drive unit 12300 may include drive devices such as hydraulic cylinder drivers, drive motor / screw drivers, drive motor / drive belt drivers, wire rope drivers, rack / pinion combination drivers, etc., but the platform may also be raised and lowered by various drive devices other than those listed.

[0159] The substrate transfer device 13000 may be composed of a hand that supports the substrate 10 and a hand drive unit that moves the hand between the first process chamber 11000 and the second process chamber 12000 through the first inlet 13100 and the second inlet 13200. The substrate transfer device 13000 can be implemented as a robotic arm transfer device well known to those skilled in the art, therefore a detailed description thereof will be omitted.

[0160] The plasma processor 12400 can generate plasma P within the second process chamber 12000 to perform plasma processing on the substrate 10. The plasma processor 12400 can be configured to generate plasma in various ways. For example, the plasma processor 12400 is also configured to generate plasma via capacitively coupled plasma (CCP) or inductively coupled plasma (ICP), but other plasma methods may also be used. In the illustrated embodiment, an upper bias device 12410 and a lower bias device 12420 are provided, but the devices for applying the upper or lower bias may be omitted as needed.

[0161] There is no particular restriction on the order of the first and second process treatments. That is, the first process treatment can be performed in the first process chamber 11000 and then the second process treatment can be performed in the second process chamber 12000. Conversely, the second process treatment can be performed in the second process chamber 12000 and then the first process treatment can be performed in the first process chamber 11000.

[0162] In this embodiment, the first process temperature at which the first process is performed in the first process chamber 11000 can be higher than the second process temperature at which the second process is performed in the second process chamber 12000. This is because the microwave thermal processor 11400 disposed in the first process chamber 11000 can quickly transfer more heat to the substrate 10, which is beneficial for processing the substrate 10 at a high process temperature.

[0163] On the other hand, not only the first process chamber 11000, but also the second process chamber 12000 may be equipped with a microwave thermal processor. In this case, not only during the first process processing, but also during the second process processing, heat can be supplied to the substrate 10 at high speed, thereby effectively performing substrate processing. In this case, the second process temperature during the second process processing in the second process chamber 12000 may be higher than the first process temperature during the first process processing in the first process chamber 11000.

[0164] Figure 10 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention. Figure 10 The substrate processing apparatus 20000 of the embodiment is implemented by a single chamber, which is different from that formed by a dual-chamber system (a first process chamber and a second process chamber). Figure 9 The embodiments differ. Figure 10 The substrate processing apparatus 20000 shown consists of a single process chamber 21000, eliminating the need for a substrate transfer device for transferring substrates between the two chambers. Therefore, according to Figure 10 In this embodiment, the time required to transfer the substrate between the two chambers can be reduced, thus shortening the process time.

[0165] The process chamber 21000 can be configured to perform a first process treatment on the substrate 10 at a first process temperature and a second process treatment on the substrate 10 at a second process temperature different from the first process temperature. As an example, the process chamber 21000 can be a reaction chamber that performs a series of ALE processes, which are repeatedly performed in cycles including modification processes, adsorption processes, purging processes, removal processes, and purging processes.

[0166] and Figure 9 Similarly, as described in the embodiments, the first process temperature can be a process temperature optimized and set for the first process treatment of the substrate 10, such as modification / adsorption process, removal process, etc. The first process temperature can be set to a temperature at which the precursor can be effectively adsorbed onto the exposed surface layer of the substrate 10, depending on the type of material constituting the substrate 10, the type of precursor gas, etc.

[0167] The first process performed in the process chamber 21000 may include, for example, a modification / modification process for the surface of the substrate 10, an adsorption process for adsorbing a precursor onto the surface of the substrate 10, and a removal process for removing the adsorbed layer formed by the reaction of modified silicon or the like on the substrate 10 with the precursor, as described in the ALE process. The second process performed in the process chamber 21000 may include other processes in the ALE process that differ from the first process.

[0168] and Figure 9 Similarly, as described in the embodiments, the second process temperature for performing the second process can be a process temperature optimized for the removal process of the substrate 10. The second process temperature can be set to an optimized temperature for the second process based on the type of material constituting the substrate 10, the type of precursor gas, etc., for example, a temperature at which the adsorption layer can be effectively removed from the surface layer of the substrate 10.

[0169] The process chamber 21000 may include a reaction chamber 21100, a stage 21200, a stage drive unit 21300, a microwave thermal processor 21400, and a plasma processor 21500. The reaction chamber 21100, stage 21200, stage drive unit 21300, microwave thermal processor 21400, and plasma processor 21500 are housed in a single chamber, as described above. Figure 9 The implementation examples differ. Figure 10 Among the constituent elements of the embodiments, with Figure 9 The description of the same or corresponding constituent elements in the embodiments also applies. Figure 10 The embodiments are provided, so repeated descriptions can be omitted.

[0170] The reaction chamber 21100 may be equipped with an exhaust device 21600 for performing a purging process to remove residual gases from the reaction chamber 21100, and a gas supply (not shown) for supplying process gases such as precursor gases and plasma process gases. The stage drive unit 21300 can drive the stage 21200 to move up and down for feeding out processed substrates or feeding in substrates before processing. The reaction chamber 21100 may be equipped with an inlet / outlet 21700 for feeding / exporting the substrate 10. A robotic arm (transfer robot) for feeding or exporting the substrate 10 may be provided in the area surrounding the reaction chamber 21100 adjacent to the inlet / outlet 21700.

[0171] In the following text, regarding the situation in Figure 11 The process performed by the substrate processing apparatus will be explained. Figure 11 The substrate processing device can perform Figure 8 The process of processing. With the stage 21200 lowered to the lower chamber 21120 side, the substrate 10 is supported on the stage 21200 by the inlet and outlet 21700, and then the stage 21200 is driven to rise to the upper chamber 21110 side by the stage drive unit 21300.

[0172] Process gas A is supplied into reaction chamber 21100 and plasma P is generated by plasma processor 21500, thereby forming a modified layer 11 on the surface of substrate 10 in a state capable of reacting with the precursor (step S10). Multiple microwave feeders of microwave thermal processor 21400 generate microwaves according to a first microwave supply mode controlled by a set or real-time temperature of the substrate, enabling efficient execution of the modification / refinement process at a first process temperature.

[0173] After the surface of substrate 10 is modified, a purging process for removing unreacted residual process gas A can be performed (step S20). Then, an adsorption process can be performed to supply process gas B, which undergoes an adsorption reaction on the surface of substrate 10, into the reaction chamber 21100, and to form a layer 12 adsorbing process gas B on the surface of substrate 10 (step S30). Multiple microwave suppliers of microwave thermal processor 21400 can generate microwaves in a second microwave supply mode controlled according to a set or real-time temperature of the substrate, so as to effectively perform the adsorption process at a second process temperature.

[0174] According to the self-control principle, the process gas can be uniformly adsorbed onto the modified layer 11 on the exposed surface of the substrate 10, while the residual process gas can be removed from the reaction chamber 21100 by a purging process (step S40). Then, the layer 13 adsorbed onto the substrate 10 can be removed by plasma treatment or heat treatment (step S50). In this case, since the bonding force between the modified layer 11 on the surface of the substrate 10 and the process gas is stronger than the removal energy, the adsorbed layer of the process gas and the modified layer 11 on the surface of the substrate 10 can be removed together.

[0175] In the removal process, the microwave thermal processor 21400's multiple microwave suppliers generate microwaves in a third microwave supply mode that can be controlled according to a set or real-time temperature of the substrate, so as to effectively perform the removal process at a third process temperature. By repeatedly performing a series of cycles of steps S10 to S50 as described above, the surface of the substrate 10 can be uniformly etched in atomic layers.

[0176] according to Figure 9 and Figure 10 The substrate processing apparatus of the embodiment not only has the effect of being able to adjust the amount of heat supplied from the microwave heat processor 21400 to the substrate 10 with very precise and uniformity, but also eliminates the need for a mechanical system for driving the stage or the microwave heat processor to rotate, thus providing the effect of reducing the manufacturing cost or maintenance / upkeep cost of the process equipment.

[0177] In addition, according to Figure 10 In this embodiment, plasma processing and heat treatment can be continuously performed within a single process chamber 21000 without transferring the substrate 10 between the two chambers (the first process chamber and the second process chamber). Therefore, the time required to transfer the substrate 10 between the two chambers can be reduced, thereby shortening the process time. Moreover, according to Figure 10 The embodiments described above can reduce the size of the process equipment, lower the cost of the process equipment, and reduce the time and cost of process equipment maintenance / repair. This may be because, as mentioned above... Figure 9As illustrated in the embodiments, the required process temperatures for plasma, heat treatment, etc., can be rapidly adjusted according to various microwave supply modes by multiple microwave suppliers constituting the microwave heat processor 21400.

[0178] Figures 11 to 15 This is a conceptual diagram illustrating a substrate processing apparatus according to another embodiment of the present invention. Figures 11 to 15 In the embodiments described above, microwave reflective structures 31110, 31120, 32110, 33120, 34120, 32200, 33200, 34200, and 35200 for effectively reflecting microwaves toward the substrate 10 are further provided in the process chambers 31000, 32000, 33000, 34000, and 35000 constituting the substrate processing apparatus 30000. This is different from the embodiments described above.

[0179] In the embodiments, the microwave reflective structures 31110, 31120, 32110, 33120, 34120, 32200, 33200, and 34200 may include: semi-circular or elliptical curved surface reflective structures 31110, 31120, 32110, 33120, and 34120 in the upper and / or lower corner regions of the reaction chambers 31100, 32100, 33100, and 34100; and / or reflective structures 32200, 33200, and 34200 that are obliquely protruding from the inner side, upper corner, or lower corner of the reaction chambers 31100, 32100, 33100, and 34100.

[0180] Microwave-reflecting structures 31110, 31120, 32110, 33120, 34120, 32200, 33200, and 34200 can be made of materials capable of reflecting microwaves, such as metals. Figure 11 In the embodiments described above, semi-circular or elliptical curved reflective structures 31110 and 31120 with a radius of curvature greater than a reference radius of curvature (e.g., 2 mm or more) may be provided at the upper and lower corners of the reaction chamber 31100. The curved reflective structures 31110 and 31120 described above may have the function of reflecting microwaves to the substrate 10 and performing high-speed heat treatment on the substrate 10 using microwaves.

[0181] exist Figure 12In this embodiment, a semi-circular or elliptical curved surface reflective structure 3211 with a radius of curvature greater than a reference radius of curvature (e.g., 2 mm or more, more preferably 1 cm or more) can be provided at the upper corner of the reaction chamber 32100, and a reflective structure 32200 protruding obliquely relative to the ground and side of the reaction chamber 32100 can be provided at the lower corner of the reaction chamber 32100. In order to effectively reflect microwaves to the substrate 10, the reflective surface 32210 of the reflective structure 32200 can be configured to form an oblique angle A1 of about 15° to 60° relative to the ground or horizontal plane of the reaction chamber 32100. The reflective structure 32200 can be configured such that its upper surface slopes downward from the outer diameter to the inner diameter.

[0182] exist Figure 13 In this embodiment, a semi-circular or elliptical curved surface reflective structure 33120 with a radius of curvature greater than a reference radius of curvature (e.g., 2 mm or more, more preferably 1 cm or more) can be provided at the lower corner of the reaction chamber 33100. Multiple reflective structures 33200 are provided on the inner surface of the reaction chamber 33100 along the vertical direction (a third direction Z perpendicular to the first and second directions). Each reflective structure 33200 can extend in a ring along the circumference of the reaction chamber 33100.

[0183] Multiple reflective structures 33200 may have an inclination angle of approximately 15° to 60° relative to the side (vertical plane) of the reaction chamber 33100, that is, an inclination angle of 30° to 75° relative to the horizontal plane. Figure 4b The reflective surface 33210 (reference numeral "A2" in the attached diagram). The reflective structure 33200 can be generally formed in a triangular shape. To prevent the generation of electric arcs, the sharp tip of the reflective structure 33200 ( Figure 11 The radius of curvature R1 of the figure (reference numeral "33220") is preferably designed to be 100 μm or more, and more preferably, the radius of curvature R1 is 500 μm or more.

[0184] exist Figure 14 In this embodiment, a semi-circular or elliptical curved surface reflective structure 34120 with a radius of curvature greater than a reference radius of curvature (e.g., 2 mm or more) can be provided at the lower corner of the reaction chamber 34100, and multiple reflective structures 34200 can be provided on the inner surface of the reaction chamber 34100 along the vertical direction. Each reflective structure 34200 can extend into a ring along the circumference of the reaction chamber 34100.

[0185] Multiple reflective structures 34200 may have reflective surfaces 34210 forming an angle of approximately 15° to 60° relative to the side (vertical surface) of the reaction chamber 34100. The reflective structures 34200 may be generally triangular in shape. To prevent the generation of electric arcs, the radius of curvature of the sharp tip portion of the reflective structures 34200 is preferably designed to be 2 mm or more.

[0186] exist Figure 14 In some embodiments, the reflective surfaces 34210 of at least two of the plurality of reflective structures 34200 may be designed with different tilt angles from each other. In the illustrated embodiment, the upper reflective structure 34200 disposed on the corner side of the upper surface of the reaction chamber 34100 may be designed to have a gentler tilt angle than the lower reflective structure 34200 located on its lower side.

[0187] Figure 15 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention. Figure 15 The substrate processing apparatus 30000 of the embodiment also includes a reflective structure driving unit 35300 for adjusting the position or orientation of the reflective structure 35200, which is consistent with... Figures 11 to 14 The embodiments shown differ. The reflective structure drive unit 35300 can drive the reflective structure 35200 to move up and down, or move horizontally, or rotate vertically or horizontally.

[0188] For example, the reflective structure drive unit 35300 may include drive devices such as hydraulic cylinder drive, drive motor / screw drive, drive motor / drive belt drive, wire rope drive, rack / pinion combination drive, etc., but the reflective structure 35200 may also be driven to lift, move horizontally, rotate, or move up and down by various drive devices other than those listed.

[0189] As the reflective structure 35200 is driven by the reflective structure driving unit 35300, the position or orientation of the reflective surface 35210 changes, thereby allowing for diverse adjustments to the microwave transmission mode delivered to the substrate 10. The reflective structure driving unit 35300 can drive the reflective structure 35200 according to the driving mode (microwave supply mode) of the multiple microwave suppliers constituting the microwave thermal processor 35400, aligning its reflective surface 35210 according to a set position or orientation. Figure 15 In some embodiments, a wider variety of microwave heat treatment modes can be provided by driving the reflective structure 35200 to rise and fall, and uneven heat supply caused by microwave interference (constructive interference, destructive interference) can be prevented.

[0190] Figure 16 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention. Figure 17To constitute Figure 16 A cross-sectional view of the stage of the substrate processing apparatus shown. Figure 16 and Figure 17 The substrate processing apparatus 40000 shown is composed of a process chamber 41000 having a microwave-heated susceptor 41230 in the upper region of the stage 41200, which differs from the embodiment described above.

[0191] The stage 41200 can be raised and lowered via the stage drive unit 41300. The stage 41200 may include a stage body 41220, a sensor 41230 disposed on the stage body 41220, and a protective film 41240 covering the sensor 41230. A heat processor 41210 may be disposed on the stage body 41220. The sensor 41230 may be formed of a thin metal film coated on ceramic or a carbon-based material. For example, the protective film 41240 may be made of quartz, synthetic glass, alumina, yttrium oxide, Si, SiC, etc.

[0192] The sensor 41230 can be heated by microwaves generated by the microwave heat processor 41400. According to Figure 16 and Figure 17 In one embodiment, the sensor 41230 can be heated by microwaves generated by the microwave thermal processor 41400. Through the heating of the sensor 41230, heat can be transferred to the substrate 10 more effectively.

[0193] Figure 18 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention. Figure 19 To show in magnified form Figure 18 The diagram shows part "B" of the substrate processing apparatus. Figure 18 and Figure 19 The substrate processing apparatus 50000 shown has a sensor 51500 heated by microwaves on the inner wall side of the reaction chamber 51100 that constitutes the process chamber 51000, which is different from the embodiment described above.

[0194] The reaction chamber 51100 may include: chamber walls 51110, 51120, and 51130; and a sensor 51500 disposed on the inner wall surface of the chamber walls 51110, 51120, and 51130. The sensor 51500 may be formed from a metal thin film coated on ceramic or a carbon-based material (e.g., graphite), and includes: a heating layer 51500a heated by microwaves generated by a microwave thermal processor 51400, and a protective film 51500b covering the heating layer 51500a. To achieve microwave heating, the concentration of the carbon-based material in the heating layer 51500a is preferably 0.5% by weight or more. Furthermore, the thickness of the metal thin film is preferably 800 μm or less. For example, the protective film 51500a may be made of quartz, synthetic glass, alumina, yttrium oxide, Si, SiC, etc.

[0195] The sensor 51500 can be heated by microwaves generated by the microwave heat processor 51400. According to... Figure 18 and Figure 19 In one embodiment, the sensor 51500 applies heat to the interior of the reaction chamber 51100 by means of microwave heating generated by the microwave heat processor 51400, thereby preventing particles or byproducts from adhering to (adsorbing) the inner wall of the reaction chamber 51100.

[0196] The sensor 51500 may include: an upper wall sensor 51510 disposed on the upper wall 51110 of the reaction chamber 51100; a side wall sensor 51520 disposed on the side wall 51120 of the reaction chamber 51100; and an exhaust sensor 51530 disposed on the wall 51130 at the outer edge of the exhaust section 51140. The upper wall sensor 51510 and the exhaust sensor 51530 may be designed to have a temperature higher than that of the side wall sensor 51520. This effectively prevents particulate contamination of the upper wall or exhaust section of the reaction chamber 51100.

[0197] In this embodiment, the upper wall receptor 51510 and the exhaust receptor 51530 can be designed to have a higher carbon concentration than the side wall receptor 51520. Therefore, by heating the receptors, particulate contamination or adsorption of byproducts on the upper wall or exhaust section of the reaction chamber 51100 can be effectively prevented, and the carbon concentration of the side wall receptor 51520 can be reduced, thereby reducing the cost associated with using high-concentration carbon.

[0198] Figure 20 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention. Figure 21 for Figure 20 A top view of the substrate processing apparatus of the embodiment. Figure 20 and Figure 21The microwave supply 61410 constituting the microwave thermal processor 61400 in the illustrated embodiment has a shutter 61430 that can be opened and closed by the controller 61420, which differs from the embodiments described above.

[0199] The shield 61430 can control the supply and blocking of microwaves. Each microwave supplier 61410 can also be configured to generate microwaves via a magnetron, and multiple microwave suppliers 61410 can also be configured to receive microwaves via a waveguide and supply them to the reaction chamber 61100 via the shield 61430 in the open state.

[0200] Figure 22 This is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention. (Refer to...) Figure 22 The substrate processing apparatus 70000 can be used for atomic layer deposition processes. (See reference...) Figure 22 The substrate processing apparatus 70000 may include: a first process chamber 71000, a second process chamber 72000, and a substrate transfer device 73000 for transferring the substrate 10 between the first process chamber 71000 and the second process chamber 72000.

[0201] The first process chamber 71000 may be a process chamber that performs a first process treatment on the substrate 10 at a first process temperature. In one embodiment, the first process chamber 71000 may be a reaction chamber for performing an etching process to etch the substrate 10, which has undergone a plasma atomic layer deposition process, by means of heat treatment. The first process temperature may be a process temperature optimized for the etching process of the substrate 10.

[0202] The first process temperature can be set to a temperature that can effectively etch the substrate 10, depending on the type of material constituting the substrate 10, the type of precursor gas, etc. The first process temperature does not necessarily refer to a specific temperature value, but rather encompasses the meaning of a process temperature range, a process temperature profile, or its statistical processing value (e.g., average value).

[0203] The second process chamber 72000 can be a process chamber that performs a second process treatment on the substrate 10 at a second process temperature different from the first process temperature. Thus, the first process chamber 71000 and the second process chamber 72000 can perform the treatment on the substrate 10 at different process temperatures. In one embodiment, the second process chamber 72000 can be a reaction chamber that performs an atomic layer deposition process on the substrate 10. The second process temperature can be a process temperature optimized for a plasma-based atomic layer deposition process.

[0204] The second process temperature can be set according to the type of material constituting the substrate 10, the type of precursor gas, etc., to a temperature at which the adsorption layer can be effectively removed from the surface layer of the substrate 10. The second process temperature does not necessarily refer to a specific temperature value, but rather encompasses the meaning of a process temperature range, a process temperature profile, or its statistical processing value (e.g., average value).

[0205] The first process chamber 71000 may include a first reaction chamber 71100, a first stage 71200, a first stage drive unit 71300, and a microwave thermal processor 71400. Although not shown, the first reaction chamber 71100 may be provided with a gas supply device (omitted from the figure) for supplying first process gases such as gases or precursors, and an exhaust device for performing purging treatment to remove residual gases from the first reaction chamber 71100.

[0206] The second process chamber 72000 may include a second reaction chamber 72100, a second stage 72200, a second stage drive unit 72300, and a plasma processor 72400. The second reaction chamber 72100 may be configured to accommodate the second stage 72200, the second stage drive unit 72300, and the plasma processor 72400.

[0207] The plasma processor 72400 can generate plasma P within the second process chamber 72000 to perform a plasma atomic layer deposition process on the substrate 10. The plasma processor 72400 may employ a CCP (capacitively coupled plasma) and / or ICP (inductively coupled plasma) type plasma generator. In the illustrated embodiment, means for applying an upper bias and a lower bias are provided, but the means for applying the lower bias may be omitted if necessary.

[0208] according to Figure 22 In one embodiment, after performing an atomic layer deposition process on the substrate 10 in the second process chamber 72000, an etching process on the substrate 10 can be performed in the first process chamber 71000. During the atomic layer deposition process on the microgrooves on the substrate 10 in the second process chamber 72000, spaces may be generated within the microgrooves. However, after performing the atomic layer deposition process, by performing thermal curing and / or anisotropic etching (removing the upper entrance portion of the microgrooves) in the first process chamber 71000, spaces can be prevented from being generated within the microgrooves on the substrate 10.

[0209] Figure 23 This is a conceptual diagram illustrating a substrate processing apparatus according to another embodiment of the present invention. (Refer to...) Figure 23The substrate processing apparatus 80000 also includes a heat processor drive unit 81500 for driving the microwave heat processor 81400 to move up and down, which differs from the embodiments described above. Figure 23 In some embodiments, a wider variety of microwave heat treatment modes can be provided by driving the microwave heat processor 81400 up and down, and uneven heat supply can be prevented due to microwave interference (constructive interference, destructive interference).

[0210] exist Figure 23 The image shows an embodiment of driving the microwave heat processor 81400 to rise and fall, but it can also drive the microwave heat processor 81400 to rotate and generate microwaves of various modes through multiple microwave suppliers. For example, the microwave heat processor 81400 may include drive devices such as hydraulic cylinder drivers, drive motor / screw shaft drivers, drive motor / drive belt drivers, wire rope drivers, rack / pinion combination drivers, etc., but it can also be driven to rise, fall, move horizontally, and rotate by various drive devices other than those listed.

[0211] As described above, according to embodiments of the present invention, a microwave thermal processor can be composed of multiple microwave suppliers, and microwaves can be generated in various supply modes by adjusting the operation of the multiple microwave suppliers (controlling microwave output). This allows for high-speed adjustment of the process temperature, enabling process processing to be performed at the appropriate process temperature required by the substrate, and also allows for uniform processing on large substrates.

[0212] Therefore, the substrate processing apparatus and method of the present invention can be effectively applied not only to planar FET or Fin FET processes, but also to manufacturing processes such as gate all around (GAA) FETs and even multi-bridge channel (MBC) FET devices. For example, the substrate processing apparatus and method of the present invention can be effectively applied to processes such as etching the region between nanosheets in an MBC (multi-bridge channel) FET device to the fine nanoscale using high-speed, precise, and fine etching processes.

[0213] exist Figure 24 and Figure 25 The present invention describes a substrate processing apparatus, including a substrate processing device.

[0214] The substrate processing apparatus 1 may include at least one substrate processing device 100 as described above. The substrate processing device 100 of one embodiment of this disclosure can precisely and uniformly adjust the amount of heat supplied to the substrate using microwaves, and can perform plasma-based processes and heat treatment processes within a single chamber. Therefore, compared to conventional techniques where heat treatment processes are performed in separate chambers, the time required to transfer the substrate between the heat treatment chamber and the plasma process chamber can be shortened, and high space efficiency can be achieved by integrating the two processes into one chamber. Furthermore, microwave heat treatment allows for faster heat treatment, and compared to heat treatment performed using methods such as photoheating or lasers, it offers the advantage of further miniaturization of the substrate processing device 100. The substrate processing apparatus 1 may include multiple miniaturized substrate processing devices 100, thus enabling space-efficient semiconductor process equipment.

[0215] The substrate processing apparatus 1 may include a substrate transfer unit 2 for transferring substrates to one or more substrate processing apparatuses 100. The substrate transfer unit 2 may be composed of a robotic arm of any shape, which picks up the substrate 10 from the loading / unloading unit 5 and transfers it to the substrate processing apparatus 100, and transfers the processed substrate from the substrate processing apparatus 100 to the loading / unloading unit 5 so that the substrate can be sent to the next process of the substrate processing apparatus 1.

[0216] The loading / unloading section 5 may include: a loading section 3 for transferring substrates from external equipment to substrate processing equipment 1; and a feeding section 4 for transferring substrates that have completed the process to external equipment. The loading section and the feeding section can exchange substrates with overhead hoist transport (OHT) equipment.

[0217] As described above, the substrate processing apparatus 100 of one embodiment of this disclosure can perform all processes for atomic layer etching in a single chamber, thus saving horizontal space. Furthermore, by using a microwave heat source that is relatively miniaturized compared to light or heat rays, vertical space is also saved. Therefore, as Figure 9 As shown in the example, the substrate processing apparatus 1 may include a plurality of substrate processing devices 100 in a horizontal direction, or as shown in the example... Figure 10 As shown, it includes multiple substrate processing devices 100 stacked vertically. Figure 9 and Figure 10 Although not shown in the figure, the gas pipelines in the substrate processing equipment 1 for supplying and discharging gas can be connected to the same layer as the substrate processing equipment 1 or to the underground layer of the substrate processing equipment 1.

[0218] It should be understood that the specific order or hierarchical structure of the steps in the proposed process is merely one example of an exemplary approach. It should be understood that, based on design priorities, the specific order or hierarchical structure of the steps in the process can be rearranged within the scope of this disclosure. While the appended method claims present the elements of each step in an exemplary order, they are not intended to be limited to the specific order or hierarchical structure proposed.

[0219] The description of the provided embodiments is intended to enable those skilled in the art to utilize or implement this disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art. The general principles defined herein may be applied to other embodiments without departing from the scope of this disclosure. Therefore, the invention is not limited to the embodiments presented herein. The invention should be construed as being consistent with the widest scope of the principles and novel features set forth herein. Specific Implementation

[0220] As described above, the relevant content is recorded in the specific embodiments of the invention.

[0221] Industrial applicability

[0222] This invention can be used in semiconductor manufacturing equipment, etc.

Claims

1. A substrate processing apparatus characterized by comprising: Comprising: an upper chamber for performing a plasma process for a substrate, a lower chamber for performing a thermal process for the substrate, a microwave thermal processor for generating microwaves into the lower chamber to transfer heat to the substrate, and a stage for supporting a substrate while being capable of ascending and descending to move the substrate to a predetermined position according to a process for the substrate.

2. The substrate processing apparatus of claim 1, wherein: the upper chamber comprises: a gas supply part including a buffer part and a shower head for a plasma process.

3. The substrate processing apparatus of claim 2, wherein: the shower head of the gas supply part has a structure inclined from a center part of the substrate to an outer edge part of the substrate.

4. The substrate processing apparatus of claim 2, wherein: the shower head of the gas supply part supplies a gas to the upper chamber through at least one of an inclined hole or a buffer hole.

5. The substrate processing apparatus of claim 1, wherein: the upper chamber comprises: an upper plasma generation part for generating a plasma in the upper chamber.

6. The substrate processing apparatus of claim 1, wherein: the upper chamber comprises: a gas exhaust part for exhausting a process gas at a side thereof.

7. The substrate processing apparatus of claim 6, wherein: the gas exhaust part has a coating for maintaining a plasma inside the upper chamber and preventing adsorption of byproducts.

8. The substrate processing apparatus of claim 6, wherein: the gas exhaust part is symmetrically disposed with the substrate as a center.

9. The substrate processing apparatus of claim 1, wherein: the upper chamber is disposed to have a height of 0.1 cm to 5 cm to accelerate supply and exhaust of a gas and formation of a plasma.

10. The substrate processing apparatus according to claim 1, wherein Further comprising: a stage step protruding in a stage direction between the upper chamber and the lower chamber.

11. The substrate processing apparatus of claim 10, wherein: the stage step comprises: a sealing gasket for preventing exchange of a gas between the upper chamber and the lower chamber during a process for a substrate in the upper chamber.

12. The substrate processing apparatus of claim 1, wherein: the lower chamber comprises: a coating for preventing adsorption of byproducts or particles at an inner side thereof.

13. The substrate processing apparatus according to claim 1, wherein Further comprising: a gas supply part for supplying an inert gas to the lower chamber.

14. The substrate processing apparatus of claim 13, wherein: the lower chamber supplies the inert gas at a higher pressure than the upper chamber to prevent inflow of a process gas of the upper chamber during a process for the substrate in the upper chamber.

15. The substrate processing apparatus of claim 1, wherein: the microwave thermal processor is disposed at least one of a side of the lower chamber, a lower surface of the stage step, or an upper part of a gas supply part of the upper chamber.

16. The substrate processing apparatus according to claim 15, wherein the microwave heat processor includes a plurality of microwave suppliers, the plurality of microwave suppliers are arranged symmetrically or asymmetrically with the substrate as a center.

17. The substrate processing apparatus according to claim 16, wherein the plurality of microwave suppliers are switched between a plurality of microwave supply modes to generate microwaves in the lower chamber to transfer heat to the substrate.

18. The substrate processing apparatus according to claim 17, wherein the plurality of microwave supply modes are modes in which microwaves are supplied into the lower chamber by a combination of at least one of the plurality of microwave suppliers.

19. The substrate processing apparatus according to claim 1, wherein the stage supports the substrate by electrostatic bonding or mechanical bonding.

20. The substrate processing apparatus according to claim 1, wherein the stage includes: a lower plasma generation section for generating plasma or applying a bias to plasma in conjunction with the upper plasma generation section.

21. The substrate processing apparatus according to claim 1, wherein the stage is moved up or down by an elevator and supports the substrate at a first position where a plasma process is performed or a second position where a heat treatment process is performed.

22. The substrate processing apparatus according to claim 1, wherein in the upper chamber, a surface modification process and an adsorption layer formation process in an atomic layer etching process for the substrate are performed, in the lower chamber, a heat treatment process in an atomic layer etching process is performed.

23. The substrate processing apparatus according to claim 22, wherein in the upper chamber, during an atomic layer etching process for a substrate, a surface modification for atomic layer etching is performed on the substrate by plasma treatment to generate a modified layer on the substrate, in the lower chamber, a heat treatment for the substrate is performed using a microwave heat processor to facilitate formation of the modified layer.

24. The substrate processing apparatus according to claim 23, wherein in the upper chamber, an adsorption layer is formed by gas treatment for a substrate on which a modified layer has been formed, and the modified layer and the adsorption layer are removed by plasma treatment; in the lower chamber, a heat treatment for the substrate is performed using a microwave heat processor to facilitate removal of the modified layer and the adsorption layer.

25. A substrate processing apparatus, comprising: one or more substrate processing apparatuses, and a substrate transfer section that transfers a substrate to the one or more substrate processing apparatuses; the substrate processing apparatus includes: an upper chamber for performing a plasma process for a substrate, a lower chamber for performing a heat treatment for the substrate, a microwave heat processor for generating microwaves into the lower chamber to transfer heat to the substrate, and a stage that supports the substrate. A stage supports a substrate while being capable of ascending and descending, thereby being capable of moving the substrate to a predetermined position according to a process for the substrate.

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