Semiconductor growth apparatus with split susceptor

Abstract

The application provides a semiconductor growth equipment with a split base, which comprises a process chamber, a supporting device, a split base, a heating device and a corrosion consumption device. The supporting device is arranged on the inner bottom of the process chamber and comprises a supporting base. The split base is arranged in the process chamber and comprises a bearing base. The supporting base is arranged around the bottom of the bearing base and detachably connected with the bearing base to form an abutting part. The split base is connected with the supporting device and forms an accommodating cavity. The heating device is arranged in the accommodating cavity and comprises a heating body arranged in the space surrounded by the bearing base to heat the bearing base. The abutting part is close to the heating body. The corrosion consumption device is arranged around the inner wall of the accommodating cavity and shields the abutting part. The corrosion consumption device is configured to have a reaction activity with the corrosive gas. According to the scheme, the corrosion consumption device is arranged on the split base to preferentially consume the corrosive gas and reduce the influence of the corrosive gas on the heating device.

Description

Technical Field

[0001] This application relates to the field of equipment technology for manufacturing or processing semiconductors, and more specifically, to a semiconductor growth apparatus with a separate base. Background Technology

[0002] In semiconductor growth equipment, a heating device and a base are installed in the process chamber. The heating device is located below the base and conducts heat to the base, which then transfers the heat to the substrate placed on its surface, so that the surface temperature of the substrate meets the process requirements.

[0003] Some semiconductor processing techniques typically require high-temperature environments and the presence of oxidizing gases. For example, gallium oxide growth processes involving oxygen have relatively harsh process conditions, and the negative impact on heating devices, especially heating elements (such as heating wires), cannot be ignored.

[0004] In some semiconductor growth equipment, the substrate carrier adopts a split structure to meet the requirements of substrate transport. The joints of these split structures inevitably become sources of leakage risk. Corrosive gases, such as oxygen, can enter the space containing the heating element through these joints, coming into contact with and reacting with the heating element. Heating element materials such as tungsten and graphite react violently with oxygen under high-temperature and high-pressure process conditions, not only shortening the lifespan of the heating device but also affecting its heating efficiency, ultimately adversely impacting the growth quality of the semiconductor products. Summary of the Invention

[0005] The purpose of this application is to provide a semiconductor growth apparatus with a split base. By setting an corrosion consumption device on the split base to preferentially consume corrosive gases, the impact of corrosive gases on the heating device is reduced, which helps to ensure the heating effect and extend the service life.

[0006] This application provides a semiconductor growth apparatus with a split base, including a process chamber, a support device, a split base, a heating device, and an etching and consuming device.

[0007] A support device is located at the bottom inner side of the process chamber, and includes a support base. A separate base is located within the process chamber and includes a load-bearing base. The support base surrounds the bottom of the load-bearing base and is detachably connected to the load-bearing base to form a mating joint; the separate base is connected to the support device and forms a receiving cavity. A heating device is located in the receiving cavity and includes a heating element disposed in the space enclosed by the load-bearing base to heat the load-bearing base, with the mating joint close to the heating element. A corrosion-consuming device is located on the inner wall of the receiving cavity and shields the mating joint. The corrosion-consuming device is configured to be reactive with corrosive gases, and the separate base and support device are configured to be corrosion-resistant to corrosive gases.

[0008] In one feasible embodiment, there is a gap between the corrosion-consuming device and the heating element, and the top surface of the device does not exceed the bottom surface of the heating element.

[0009] In one feasible embodiment, the heating device further includes a heat insulation plate, with the heating element located between the heat insulation plate and the inner top wall of the support base, and a gap between the corrosion-consuming device and the heat insulation plate to avoid motion interference.

[0010] In one feasible embodiment, the material of the corrosion-consuming device includes one or a combination of two of porous and fluffy carbon and sintered porous iron.

[0011] In one feasible embodiment, the device further includes an electric heating element and a power supply device; the heating device includes a heating support device that supports the heating element and provides electrical energy, the electric heating element is disposed within the corrosion-consuming device and has a portion of its surface exposed; the power supply device is disposed in the heating support device and is in contact with the exposed surface of the electric heating element to form an electrical connection, thereby heating the corrosion-consuming device.

[0012] In one feasible embodiment, a power supply control device is also provided outside the process chamber. The heating support device includes an electrode plate and a heating support for supporting the electrode plate. The power supply device is located on the electrode plate, extends outside the process chamber via a wire, and is electrically connected to the power supply control device. The height of the connection point is higher than the height of the electrode plate and lower than the height of the heating element.

[0013] In one feasible embodiment, the power supply device includes a conductive contact extending toward the corrosion-consuming device; the corrosion-consuming device is provided with an annular conductive groove toward the power supply device, the annular conductive groove being electrically connected to the electric heating component; the conductive contact is in electrical contact with the annular conductive groove.

[0014] In one feasible embodiment, a rotary drive device is also provided outside the process chamber. The bottom of the support device is dynamically sealed to the bottom plate of the process chamber. The rotary drive device is connected to the support device to drive rotation. The heating support passes through the support device and the bottom plate of the process chamber and extends through the inside of the rotary drive device so as to remain stationary during the rotation of the support device by the rotary drive device.

[0015] In one feasible embodiment, a groove structure facing into the cavity is formed at the junction of the bearing base and the support base; the corrosion consumption device is fitted with the groove structure in a concave-convex fit, and the corrosion consumption device is at least fitted with the surface of the support base near the groove structure.

[0016] In one feasible embodiment, the axial length of the corrosion-consuming device below the joint is L1, and the axial length above the joint is L2, wherein L1 > L2.

[0017] In one feasible embodiment, the corrosion-consuming device has an annular gas collection groove on the side wall facing the support base, forming a gas collection cavity with the support base, and the gas collection groove is close to the docking point.

[0018] In one feasible scheme, the number of gas collection slots is greater than or equal to 2, and the gas collection slots are arranged sequentially along the axial direction.

[0019] In one feasible approach, adjacent gas collection chambers are interconnected.

[0020] In one feasible solution, the support base is fixedly connected to the corrosion-consuming device, and the structure formed by the support base and the corrosion-consuming device is detachably fixedly connected to the bearing base, so that the corrosion-consuming device and the bearing base fit together.

[0021] Compared with the prior art, the beneficial effects of this application include at least the following: In this application, the split base and the support device form a receiving cavity, the corrosion consumption device is disposed in the split base at the joint formed by the detachable connection between the bearing base and the support base, the corrosion consumption device is surrounded by the inner wall of the receiving cavity and shields the joint, the heating element for heating the bearing base, which is combined with the heating device in the receiving cavity, is disposed in the space surrounded by the bearing base, and the corrosion consumption device is configured to have a higher reactivity with corrosive gas than the bearing base with corrosive gas, so that even if corrosive gas enters the receiving cavity through the joint, the corrosive gas will preferentially contact the corrosion consumption device and react, thereby being consumed before reaching the heating element, effectively reducing the contact opportunity between the heating element and the corrosive gas, helping to extend the service life of the heating device, ensuring the heating effect of the heating element, achieving effective protection of the heating device, and further improving the reliability of equipment operation. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of a semiconductor growth apparatus with a rotatable split base, as shown in an embodiment of this application.

[0024] Figure 2 for Figure 1 A partial structural diagram of a semiconductor growth equipment.

[0025] Figure 3 for Figure 2 A schematic diagram of the first structure of the split base and corrosion consumption device.

[0026] Figure 4 for Figure 2 A schematic diagram of the second structure of the split base and corrosion consumption device.

[0027] Figure 5 for Figure 4 A magnified view of the connection point between the corrosion-consuming device and the split base.

[0028] Figure 6 This is a partial schematic diagram of a semiconductor growth apparatus with active etching enhancement function, as shown in an embodiment of this application.

[0029] Figure 7 for Figure 6 A magnified schematic diagram of the structure at point A in the middle.

[0030] Figure 8 This is a schematic diagram of a semiconductor growth apparatus with a non-rotatable split base, as shown in an embodiment of this application.

[0031] In the diagram: 100, process chamber; 101, mounting hole; 200, support device; 12, support base; 201, extension; 1, split base; 11, bearing base; 13, receiving cavity; 14, docking point; 15, groove structure; 2, heating device; 21, heating support; 22, heating element; 23, electrode plate; 24, electrode pin; 25, heat insulation plate; 3, corrosion consumption device; 31, protruding structure; 32, gas collection groove; 33, electric heating component; 34, annular conductive groove; 4, power supply device; 41, conductive contact; 5, rotary drive device. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0033] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0034] like Figure 1 or Figure 8As shown, this application provides a semiconductor growth apparatus with a split base, including a process chamber 100, a support device 200, a split base 1, a heating device 2, and an etching and consuming device 3.

[0035] In some embodiments, the process chamber 100 contains corrosive gases, for example, during the process. Here, "corrosive" refers to the presence of a corrosive gas relative to the heating element 22 of the heating device 2. More specifically, in the epitaxial gallium oxide growth process at process temperatures of 600–900 degrees Celsius, oxygen is used as one of the process gases.

[0036] The support device 200 is located at the bottom of the process chamber 100, and the split base 1 is located inside the process chamber 100. The support device includes a support base 12.

[0037] The support base 12 can be fixedly connected to the corrosion consumption device 3, and the structure formed by the support base 12 and the corrosion consumption device 3 can be detachably fixedly connected to the bearing base 11, so that the corrosion consumption device 3 and the bearing base 11 fit together.

[0038] The split base 1 includes a carrier base 11, which is used to carry a substrate (e.g., a silicon wafer). Specifically, the carrier base 11 is dome-shaped, with the substrate carried at the top and an opening at the bottom. In some applications, the substrate and the carrier base 11 carrying the substrate need to be transferred as a whole into the process chamber 100. Carrier bases 11 of the same size can have different recess sizes for carrying the substrate, which can meet the needs of the same process chamber 100 for growing semiconductor material layers on substrates of different sizes.

[0039] The split base 1 is connected to the support device 200 and forms a receiving cavity 13. Specifically, the support base 12 surrounds the bottom of the bearing base 11 and is detachably connected to the bearing base 11. In some specific embodiments, the support base 12 is a cylindrical shape with openings at both the top and bottom. The lower end of the bearing base 11 is installed on the upper end of the support base 12, and a mating joint 14 is formed at the joint.

[0040] In some embodiments, the support device 200 is an integrated structure.

[0041] Heating device 2 is disposed in receiving cavity 13. Heating device 2 includes heating support 21 and heating element 22. Heating element 22 is disposed in the space surrounded by bearing base 11 and close to the inner top wall of bearing base 11 for heating bearing base 11. Specifically, the first end of heating support 21 passes through support device 200 and extends toward the bottom plate of process chamber 100. The second end of heating support 21 is located in receiving cavity 13. Heating element 22 is installed at the second end of heating support 21 and close to the inner top wall of bearing base 11 to heat bearing base 11.

[0042] In some specific embodiments, the heating element 22 includes a heating element such as a heating wire or heating coil, made of materials such as copper or tungsten, which can be selected according to the specific process requirements.

[0043] In some specific embodiments, the heating element 22 further includes a substrate supporting the heating element. When the substrate is an insulating substrate, such as a ceramic substrate, the heating element is arranged on the insulating substrate and extends downward through the insulating substrate to connect to the corresponding electrode pins 24 below; when the substrate is a conductive substrate, such as a molybdenum substrate, the arrangement and extension of the heating element on the conductive substrate are necessary to ensure electrical insulation between them. The specific implementation methods of the above technical solutions are conventional technical means in this field.

[0044] The top plate of the support base 11 (i.e. the support body extending radially) is used to support the substrate, and the support base 11 is dome-shaped.

[0045] The separate base 1 and the support device 200 are configured to be corrosion-resistant to corrosive gases. That is, the reactivity of the separate base 1 and the support device 200 with corrosive gases is lower than that of the corrosion consumption device 3 with corrosive gases.

[0046] The corrosion consumption device 3 is disposed within the inner wall of the receiving cavity 13 and shields the docking point 14. In some specific embodiments, the corrosion consumption device 3 is configured as a ring structure. The corrosion consumption device 3 is configured to be reactive with corrosive gases, so that even if corrosive gases enter the receiving cavity 13 through the docking point 14, they can be preferentially blocked and consumed by the corrosion consumption device 3.

[0047] In some embodiments, the support base 11 is a corrosion-resistant base. In some specific embodiments, the support base 11 is a graphite base, or a graphite base coated with silicon carbide.

[0048] In some specific embodiments, the support device 200 is a corrosion-resistant support base. In some specific embodiments, the support device 200 is made of graphite, graphite-coated silicon carbide, silicon carbide, or quartz.

[0049] In this embodiment, the corrosion consumption device 3 is positioned inside the receiving cavity 13 and near the connection point 14 between the bearing base 11 and the support base 12. This arrangement intercepts corrosive gases such as oxygen in the leakage path, causing them to contact and react with the corrosion consumption device 3, thus consuming the oxygen before it reaches the heating element 22 inside the receiving cavity 13. This process effectively reduces the probability of contact between the heating element 22 and corrosive gases such as oxygen, essentially preventing the heating element 22, made of materials such as tungsten, from reacting with corrosive gases like oxygen under process conditions, which would affect its heating effect. This helps extend the service life of the heating device 2 and maintains the heating performance of the heating element 22, ensuring that the bearing base 11 receives a uniform and stable heat source. This, in turn, ensures that the substrate surface temperature meets process requirements and improves the growth quality of semiconductor products. Furthermore, without affecting the normal bearing function of the separate base 1 and the heat transfer of the heating device 2, it effectively protects the heating device 2, further improving the reliability of the equipment operation.

[0050] In some embodiments, the material of the corrosion consumption device 3 may include one or a combination of two of porous carbon (e.g., porous graphite) and sintered porous iron.

[0051] Considering the differences in process temperature, the corrosion consumption device 3 can be made of materials suitable for different scenarios. For example, for high-temperature processes above 500 degrees Celsius, porous carbon can be used; for process temperatures of 200 to 400 degrees Celsius, sintered porous iron can be used, which has relatively high reactivity with oxygen. This allows corrosive gases, such as oxygen, to preferentially contact and react with the corrosion consumption device 3 at the connection point 14, which helps to consume the corrosive gases before they reach the heating element 22 in the containment cavity 13.

[0052] In some embodiments, such as Figure 8 As shown, in a scenario where the split base 1 does not need to rotate, the support device 200 is located on the inner bottom plate of the process chamber 100.

[0053] In some embodiments, such as Figure 1 As shown, in scenarios where the split base 1 needs to rotate, the semiconductor growth equipment also includes a rotation drive device 5 located outside the process chamber 100. The bottom of the support device 200 is dynamically sealed to the bottom plate of the process chamber 100, and the rotation drive device 5 is connected to the support device 200 to drive its rotation. The heating support 21 passes through the support device 200 and the bottom plate of the process chamber 100 and extends through the inside of the rotation drive device 5, so that it remains stationary during the rotation of the support device 200 driven by the rotation drive device 5.

[0054] In some specific embodiments, such as Figure 1As shown, a mounting hole 101 is provided at the bottom plate of the process chamber 100, and an extension 201 passing through the mounting hole 101 is provided at the bottom of the support device 200. The extension 201 is hollow, and the heating support 21 passes through the interior of the extension 201. A rotary drive device 5 is installed on the outer side of the bottom of the process chamber 100 and connected to the extension 201 to drive the support device 200 to rotate, thereby driving the split base 1 to rotate. There is a rotational seal between the extension 201 of the support device 200 and the mounting hole 101, and a rotational seal between the extension 201 and the heating support 21. During the rotation of the extension 201, the heating support 21 remains stationary.

[0055] In some embodiments, such as Figure 1 As shown, the heating device 2 includes a heating support device that supports the heating element 22 and provides electrical energy. The heating support device includes a heating support 21, an electrode plate 23, and electrode pins 24. The electrode plate 23 is mounted on the upper end of the heating support 21 along the axial direction, and the electrode pins 24 are mounted on the electrode plate 23. The heating element 22 is connected to the electrode plate 23 through the electrode pins 24. The electrode pins 24 are arranged on the electrode plate 23 to ensure electrical insulation between each other. External heating control is achieved through the electrode plate 23 and the electrode pins 24 to control the heating of the heating element 22.

[0056] In some embodiments, such as Figure 1 , Figure 2 As shown, in the structure of the split base 1, the axial extension length of the bearing base 11 is shorter than that of the support base 12. Furthermore, the height of the joint 14 between the bearing base 11 and the support base 12 is higher than the height of the electrode plate 23 and lower than the height of the heating element 22, and the joint 14 is closer to the bearing body of the bearing base 11.

[0057] A gap exists between the corrosion consumption device 3 and the heating element 22 to prevent motion interference between the corrosion consumption device 3 and the heating element 22 during movement (e.g., rotation of the split base). Furthermore, the top surface of the corrosion consumption device 3 does not exceed the bottom surface of the heating element 22. This arrangement not only minimizes adverse effects on the temperature field between the heating element 22 and the split base 1, but also ensures that even if corrosive gases such as oxygen enter the receiving cavity 13 from the docking point 14, they will preferentially enter the effective range of the corrosion consumption device 3 along the diffusion path, preferentially reacting with and consuming the corrosive gases. This height design minimizes the contact between corrosive gases and the heating element 22, while also reducing the risk of corrosion from corrosive gases on the electrode plate 23 and electrode pins 24, which support the heating element 22. This ensures the stability of the electrical connection structure of the heating device 2 and the structural integrity of the heating element 22, helps maintain a stable heating effect of the heating device 2, extends its service life, further guarantees the growth quality of semiconductor process products, and provides support for the stable growth of semiconductor process products. At the same time, it does not affect the normal load-bearing function of the split base 1 or the overall reliability of the equipment operation.

[0058] In some specific embodiments, the top surface of the corrosion consumption device 3 does not exceed the bottom surface of the heating element of the heating body 22.

[0059] In some specific embodiments, the top surface of the corrosion consumption device 3 does not exceed the bottom surface of the substrate supporting the heating element of the heating body 22.

[0060] In some embodiments, such as Figure 1 As shown, the heating device 2 may also include a heat insulation plate 25, with electrode pins 24 penetrating the heat insulation plate and ensuring electrical insulation between them. The heat insulation plate 25 is located below the heating element 22. The heating element 22 establishes a stable electrical connection with the electrode plate 23 through the electrode pins 24. After being energized, it generates the heat required for the process. The heat insulation plate 25 can effectively block the heat lost downward by the heating element 22 and reflect most of the heat to the support base 11. This not only improves the heat utilization efficiency of the heating device 2 and reduces unnecessary energy loss, but also helps the support base 11 to quickly absorb heat and evenly transfer it to the substrate, enabling the substrate to reach and maintain the required process temperature more quickly and ensuring the uniformity of the substrate temperature.

[0061] In some embodiments, such as Figure 1 As shown, there is a gap between the corrosion consumption device 3 and the heat insulation plate 25 to avoid motion interference.

[0062] In some embodiments, a groove structure 15 is formed at the junction of the bearing base 11 and the support base 12, located within the receiving cavity 13. The corrosion consumption device 3 is fitted with the groove structure 15 in a concave-convex fit, and the corrosion consumption device 3 at least fits the surface of the support base 12 near the groove structure 15. Figure 2 and Figure 3 As shown, a groove structure 15 is provided at the joint 14 between the bearing base 11 and the support base 12, facing the receiving cavity 13. A protruding structure 31 is provided on the corrosion consumption device 3, and the protruding structure 31 and the groove structure 15 form a concave-convex fit.

[0063] In some embodiments, the groove structure 15 can be configured as an annular groove, and the protrusion structure 31 can be configured as an annular protrusion, adapting to the circumferential layout of the corrosion consumption device 3. The joint path formed by the concave and convex fit significantly extends the diffusion path of the corrosive gas that seeps in from the mating point 14. This ensures that even as the infiltrated corrosive gas slowly diffuses along the path formed by the concave and convex fit, it can fully contact and react with the corrosion consumption device 3, thereby being consumed to the maximum extent. This concave and convex fit structural design not only strengthens the connection between the corrosion consumption device 3 and the separate base, but also utilizes the extended and complex diffusion path created by the assembly gap to effectively slow down or even prevent the rapid penetration of corrosive gas into the receiving cavity 13.

[0064] In some embodiments, the corrosion-consuming device 3 may be additionally fixed to the surface of the support base 12 by means of fasteners such as screws or snap-fit ​​structures.

[0065] In some preferred embodiments, such as Figure 3 As shown, the groove structure 15 is disposed on one side of the bearing base 11; and the corrosion consumption device 3 extends from the protrusion structure 31 to both ends in the axial direction and fits against the inner surfaces of the bearing base 11 and the support base 12.

[0066] In scenarios where the split base 1 is rotatable, i.e., when the support device 200 drives the split base 1 to rotate, the process gas flowing over the top surface of the bearing base 11 will move away from the bearing base 11 due to the drag of the centrifugal force of rotation. Furthermore, an exhaust port is provided at the bottom of the process chamber 100, and an external suction device provides the suction force. Under the suction force of the exhaust at the bottom of the process chamber 100, the gas flowing through the support device 200 will converge.

[0067] Therefore, in the rotatable structure of the split base 1, a concave-convex mating structure is provided, and the corrosion consumption device 3 extends from the protruding structure 31 to both ends of the axial direction, which can maximize the contact area between the corrosive process gas and the corrosion consumption device 3. The complicated or extended docking point and the enhanced corrosion consumption characteristics can also prevent leakage to the internal space where the heating element 22 is located to the greatest extent.

[0068] In some embodiments, such as Figure 3As shown, the axial length of the corrosion consumption device 3 below the docking point 14 is L1, and the axial length above the docking point 14 is L2, where L1 > L2. The longer L1 creates a longer interception area along the main diffusion path of the corrosive gas. Combined with the highly reactive material of the corrosion consumption device 3 and the corrosive gas, this significantly increases the contact time and area between the gas and the device, allowing the corrosive gas to be consumed more fully and effectively preventing it from reaching the area where the heating element 22 is located. The relatively shorter L2 prevents the corrosion consumption device 3 from extending excessively above the docking point 14, without affecting the structural fit and stability of the support base 11, nor interfering with the heat transfer from the heating element 22 to the support base 11, while also reducing the potential impact on the temperature field near the support base 11. This design further optimizes the interception efficiency. Even if there are assembly gaps between the corrosion consumption device 3 and the support base 11 and the support base 12, the longer L1 can further reduce the risk of gas leakage by extending the leakage path and enhancing the corrosion reaction, thus more reliably protecting the heating element 22 from corrosion without increasing the complexity of the equipment.

[0069] In some embodiments, such as Figure 4 and Figure 5 As shown, the sidewall of the corrosion consumption device 3 facing the inner wall of the split base 1 may be provided with at least one annular gas collection groove 32. Preferably, as shown... Figure 4 and Figure 5 As shown, the gas collecting groove 32 is disposed on the side wall of the corrosion consumption device 3 facing the support base 12. A gas collecting cavity (not shown in the figure) is formed between the gas collecting groove 32 and the side wall of the support base 12.

[0070] Corrosive gas diffusing from the joint 14 between the support base 12 and the bearing base 11 enters the gas collecting groove 32. The structure enclosed by the gas collecting groove 32 and the sidewall of the support base 12 increases the contact area between the corrosion-consuming device 3 and the corrosive gas, allowing for sufficient contact and reaction between the gas and the corrosion-consuming device 3, thus consuming the corrosive gas more efficiently and minimizing its penetration into the area where the heating element 22 is located. Simultaneously, the gas collecting groove 32 reduces the weight of the corrosion-consuming device 3, minimizing the risk of the structure of the corrosion-consuming device 3 near the joint 14 being damaged by excessive corrosion. The entire design requires no additional components; by simply optimizing the sidewall structure of the corrosion-consuming device 3, it enhances the corrosion interception effect while increasing the operational stability of the equipment.

[0071] In some embodiments, such as Figure 4 and Figure 5 As shown, when the number of gas collecting grooves 32 is greater than or equal to two, the multiple gas collecting grooves 32 are arranged sequentially along the axial direction (i.e., the axial direction of the support base 12).

[0072] Furthermore, in some embodiments, the gas collecting cavities formed between each gas collecting groove 32 and the side wall of the support base 12 are interconnected. After the corrosive gas seeps in from the docking point 14 and enters the nearest gas collecting groove 32, it will flow smoothly between multiple gas collecting grooves 32 through the interconnecting structure. This not only significantly prolongs the contact path and reaction time between the gas and the corrosion consumption device 3, but also further expands the contact area between the two. Combined with the use of highly reactive materials such as porous and fluffy graphite, carbon, or sintered porous iron in the corrosion consumption device 3, the corrosive gas can undergo a more complete chemical reaction, effectively reducing the penetration of unconsumed gas into the area where the heating element 22 is located.

[0073] The portion between the gas collecting grooves 32 can have a gap with the supporting base 12 to allow communication between adjacent gas collecting grooves 32. Alternatively, through holes can be provided between adjacent gas collecting grooves 32 to achieve communication.

[0074] In some embodiments, the heating device 2 includes a heating element 22 and a heating support device that supports the heating element 22 and provides electrical energy. In some embodiments, the heating support device consists of an electrode plate 23, a heating support 21, and electrode leads 24. In some embodiments, the heating support device may also include a heat insulation plate 25.

[0075] In some embodiments, the material selection of the corrosion consumption device 3 is related to the type of corrosive process gas. The containment cavity where the corrosion consumption device 3 is located has a certain temperature, which may prevent it from reaching the reaction temperature of both gases, or may cause the reaction rate to be too slow to effectively intercept the corrosive process gas. To enhance the reaction effect on the corrosive gas, such as... Figure 6 As shown, an electric heating element 33 can be installed inside the corrosion consumption device 3. A power supply device 4 is also installed in the process chamber 100, and is electrically connected to the electric heating element 33. Furthermore, the electric heating element 33 is installed inside the corrosion consumption device 3 with a portion of its surface exposed. The power supply device 4 is installed on the heating support device and contacts the exposed surface of the electric heating element 33 to heat the corrosion consumption device 3.

[0076] In some embodiments, such as Figure 8 As shown, for the split base 1 which does not require rotation, the location of the power supply device 4 is relatively flexible. It can be set on the electrode plate 23 or installed on the support device 200.

[0077] In some embodiments, a power supply control device is also provided outside the process chamber 100. The power supply device 4 is located on the electrode plate 23, extends to the outside of the process chamber 100 via a wire, and is electrically connected to the power supply control device. For the split base 1 without rotation requirements, the arrangement of the wire can be flexibly selected, as long as it does not affect the sealing performance of the process chamber and ensures good electrical contact with the power supply device. For the split base 1 with rotation requirements, the wire is electrically connected to the power supply control device via the heating support 21, or via the heating support 21 and the electrode plate 23. The heating support 21 extends to the inner bottom surface of the rotating drive device 5. When the split base 1 rotates, the base plate on which the inner bottom surface of the rotating drive device 5 is located is in a stationary state (i.e., there is a dynamic seal between the base plate and the structure directly connected to the rotating drive motor). The wire is electrically connected to the power supply control device via the inner bottom surface of the rotating drive device 5, thereby avoiding the problem of wire entanglement affecting the power supply effect during the rotation of the split base 1.

[0078] In some embodiments, such as Figure 6 and Figure 7 As shown, for the split base 1 which requires rotation, the power supply device 4 is mounted on the electrode plate 23, and the power supply device 4 is provided with a conductive contact 41 extending towards the corrosion consumption device 3. An electric heating component 33 is provided inside the corrosion consumption device 3, and an annular conductive groove 34 is provided on the side of the corrosion consumption device 3 facing the power supply device 4. The annular conductive groove 34 is electrically connected to the electric heating component 33. The conductive contact 41 is inserted into the annular conductive groove 34, and the corrosion consumption device 3 rotates with the split base 1, and the conductive contact 41 makes sliding electrical contact with the annular conductive groove 34.

[0079] The electric heating component 33 can be a component that can stably generate heat, such as a resistance heating element. After the power supply device 4 provides electrical energy to the electric heating component 33, the electric heating component 33 will generate heat and transfer it to the corrosion consumption device 3, causing the temperature of the corrosion consumption device 3 to rise. The increased temperature will further accelerate its reaction rate with the corrosive gas that seeps in from the docking point 14, allowing the gas to be fully consumed in a shorter time. Compared with the passive corrosion mode, this can more effectively prevent the corrosive gas from diffusing to the core components such as the heating element 22 and the electrode pins 24.

[0080] Meanwhile, the heat generated by the electric heating component 33 can also assist in heating the interior of the receiving cavity 13, helping to improve heat utilization efficiency. In some scenarios, the structure of the heating device 2 can be simplified, eliminating the need for additional heat insulation plates 25 or heat reflectors. This design enhances the corrosion interception effect through active heating, making it particularly suitable for scenarios with high concentrations of corrosive gases or processes requiring higher corrosion resistance. Furthermore, in rotational scenarios, the connection layout between the power supply device 4 and the electric heating component 33 does not interfere with the rotational stability of the split base 1, nor does it affect the heat transfer from the heating element 22 to the supporting base 11. This effectively protects the heating device 2 from corrosion, maintains its stable heating performance, extends its service life, and ensures that the substrate surface temperature meets process requirements, further improving the reliability and process adaptability of the equipment.

[0081] The above description is only a partial embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A semiconductor growth apparatus equipped with a split base, characterized in that, include: Process chamber (100); A support device (200) is disposed at the bottom inner side of the process chamber (100), and the support device (200) includes a support base (12). The split base (1) is located in the process chamber (100) and includes a bearing base (11). The supporting base (12) surrounds the bottom of the bearing base (11) and is detachably connected to the bearing base (11) to form a docking point (14). The split base (1) is connected to the supporting device (200) and forms a receiving cavity (13). A heating device (2) is provided in the receiving cavity (13) and includes a heating element (22) provided in the space enclosed by the supporting base (11) to heat the supporting base (11). The docking point (14) is close to the heating element (22). The corrosion-consuming device (3) is installed on the inner wall of the receiving cavity (13) and covers the docking point (14). The corrosion consumption device (3) is configured to be reactive with corrosive gases; The split base (1) and the support device (200) are configured to be resistant to the corrosive gas; The corrosion-consuming device (3) has an annular gas collecting groove (32) on the side wall facing the support base (12) to form a gas collecting cavity with the support base (12), and the gas collecting groove (32) is close to the docking point (14).

2. The semiconductor growth apparatus with a split base according to claim 1, characterized in that, There is a gap between the corrosion consumption device (3) and the heating element (22), and the top surface does not exceed the bottom surface of the heating element (22).

3. The semiconductor growth apparatus with a split base according to claim 2, characterized in that, The heating device (2) also includes a heat insulation plate (25), the heating element (22) is located between the heat insulation plate (25) and the inner top wall of the bearing base (11), and there is a gap between the corrosion consumption device (3) and the heat insulation plate (25) to avoid motion interference.

4. The semiconductor growth apparatus with a split base according to claim 1, characterized in that, The material of the corrosion consumption device (3) includes one or a combination of two of porous and fluffy carbon and sintered porous iron.

5. The semiconductor growth apparatus with a split base according to claim 1, characterized in that, It also includes an electric heating element (33) and a power supply device (4); The heating device (2) includes a heating support device that supports the heating element (22) and provides electrical energy. The electric heating component (33) is located inside the corrosion consumption device (3) and has part of its surface exposed. The power supply device (4) is located in the heating support device and is in contact with the exposed surface of the electric heating component (33) to form an electrical connection, so as to heat the corrosion consumption device (3).

6. The semiconductor growth apparatus with a split base according to claim 5, characterized in that, It also includes a power supply control device located outside the process chamber (100), the heating support device includes an electrode plate (23) and a heating support (21) supporting the electrode plate (23); the power supply device (4) is located on the electrode plate (23), extends to the outside of the process chamber (100) via a wire, and is electrically connected to the power supply control device; the height of the docking point (14) is higher than the height of the electrode plate (23) and lower than the height of the heating element (22).

7. The semiconductor growth apparatus with a split base according to claim 5, characterized in that, The power supply device (4) includes a conductive contact (41) extending toward the corrosion-consuming device (3). The corrosion-consuming device (3) is provided with an annular conductive groove (34) on the side facing the power supply device (4), and the annular conductive groove (34) is electrically connected to the electric heating component (33). The conductive contact (41) is in electrical contact with the annular conductive groove (34).

8. The semiconductor growth apparatus with a split base according to claim 6, characterized in that, It also includes a rotary drive device (5) located outside the process chamber (100), the bottom of the support device (200) being dynamically sealed to the bottom plate of the process chamber (100), and the rotary drive device (5) being connected to the support device (200) to drive rotation; The heating support (21) passes through the support device (200) and the bottom plate of the process chamber (100) and extends through the inside of the rotary drive device (5) so as to remain stationary during the rotation of the support device (200) driven by the rotary drive device (5).

9. The semiconductor growth apparatus with a split base according to claim 1, characterized in that, The junction of the bearing base (11) and the support base (12) also forms a groove structure (15) facing into the receiving cavity (13). The corrosion consumption device (3) is fitted to the groove structure (15) in a concave-convex fit, and the corrosion consumption device (3) is fitted to the surface of the support base (12) near the groove structure (15).

10. The semiconductor growth apparatus with a split base according to claim 9, characterized in that, The corrosion-consuming device (3) has an axial length of L1 below the docking point (14) and an axial length of L2 above the docking point (14), wherein L1 > L2.

11. The semiconductor growth apparatus with a split base according to claim 1, characterized in that, The number of gas collecting grooves (32) is greater than or equal to 2, and each of the gas collecting grooves (32) is arranged sequentially along the axial direction.

12. The semiconductor growth apparatus with a split base according to claim 11, characterized in that, The adjacent gas collection chambers are interconnected.

13. The semiconductor growth apparatus with a split base according to claim 1, characterized in that, The support base (12) is fixedly connected to the corrosion consumption device (3), and the structure formed by the support base (12) and the corrosion consumption device (3) is detachably fixedly connected to the bearing base (11), so that the corrosion consumption device (3) and the bearing base (11) fit together.

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