Mask pattern repairing method and device and product

Abstract

The invention discloses a mask pattern repairing method, device and product, and relates to the technical field of semiconductor integrated circuits. The mask plate graph repairing method comprises the following steps: carrying out photoetching simulation on a mask plate graph by adopting a photoetching model to obtain a prediction graph corresponding to the mask plate graph; performing photoetching rule inspection on the prediction graph to obtain the position and the type of a defect point violating a photoetching rule in the prediction graph; according to the position of the defect point, determining a to-be-repaired area of the defect point on the mask plate graph; identifying a pattern edge in the to-be-repaired area, and calculating the influence degree of the position change of the pattern edge on the geometric deviation between the predicted pattern and the design layout by adopting the photoetching model; determining an adjustment parameter of the graph edge according to the type and the influence degree of the defect point; and adjusting the pattern edge according to the adjustment parameter to obtain a repaired mask plate pattern. According to the method, the defects in the mask plate graph can be repaired more efficiently.

Description

Technical Field

[0001] This application belongs to the field of semiconductor integrated circuit technology, and in particular relates to a mask layout repair method, apparatus and product. Background Technology

[0002] As integrated circuit process nodes continue to shrink, optical diffraction effects during photolithography become increasingly severe, leading to significant deviations between the patterns on the wafer and the design layout. Optical Proximity Correction (OPC) technology compensates for this deviation by optimizing the mask pattern. However, even after optimization using the OPC model, the design layout may still have micro-defects in local areas, such as bridging, broken lines, or excessive edge placement errors.

[0003] Currently, the main approach to addressing residual defects in mask patterns after optical proximity correction is to adjust the parameters of the OPC model and then re-perform global OPC iteration. This approach is not only difficult to adjust the parameters, but also consumes a lot of computational resources and is time-consuming, which cannot meet the needs of rapid design iteration.

[0004] In summary, current methods for repairing residual defects in photomasks after optical proximity correction are characterized by low efficiency and long processing time. Summary of the Invention

[0005] This application provides a mask pattern repair method, apparatus, and product that can more efficiently repair defects in a mask pattern.

[0006] A first aspect of this application provides a mask pattern repair method, comprising: performing photolithographic simulation on a mask pattern using a photolithography model to obtain a predicted pattern corresponding to the mask pattern; performing photolithographic rule checks on the predicted pattern to obtain the location and type of defect points that violate photolithographic rules in the predicted pattern; determining the repairable area of ​​the defect points on the mask pattern based on the location of the defect points; identifying pattern edges in the repairable area and calculating the degree of influence of the position change of the pattern edges on the geometric deviation between the predicted pattern and the design pattern using the photolithography model; determining adjustment parameters for the pattern edges based on the type of the defect points and the degree of influence; and adjusting the pattern edges according to the adjustment parameters to obtain a repaired mask pattern.

[0007] A second aspect of this application provides a mask pattern repair apparatus, comprising: a simulation module for performing photolithographic simulation on a mask pattern using a photolithography model to obtain a predicted pattern corresponding to the mask pattern; an inspection module for performing photolithographic rule checks on the predicted pattern to obtain the location and type of defect points in the predicted pattern that violate photolithographic rules; a first determination module for determining the repairable area of ​​the defect point on the mask pattern based on the location of the defect point; an identification module for identifying pattern edges in the repairable area and calculating the degree of influence of the position change of the pattern edge on the geometric deviation between the predicted pattern and the design pattern using the photolithography model; a second determination module for determining adjustment parameters of the pattern edge based on the type of the defect point and the degree of influence; and an adjustment module for adjusting the pattern edge according to the adjustment parameters to obtain a repaired mask pattern.

[0008] A third aspect of this application provides a computer device, including: a memory and a program or instructions stored in the memory and executable on a processor, wherein when the program or instructions are executed by the processor, they implement the mask pattern repair method provided in the first aspect of this application described above.

[0009] A fourth aspect of the embodiments of this application provides a readable storage medium on which a program or instructions are stored, and when the program or instructions are executed by a processor, implement the mask layout repair method provided in the first aspect of the embodiments of this application described above.

[0010] A fifth aspect of the present application provides a computer program product in which instructions, when executed by a processor of a computer device, cause the computer device to perform the mask layout repair method provided in the first aspect of the present application described above.

[0011] The mask layout repair method, apparatus, and product provided in this application identify graphic edges in the area to be repaired and use the lithography model to calculate the influence of the positional changes of the graphic edges on the geometric deviation between the predicted graphic and the design layout. Based on the type of the defect and the degree of influence, the adjustment parameters of the graphic edges are determined, enabling accurate determination of these parameters. The graphic edges are then adjusted according to these parameters to obtain the repaired mask layout. This precise local adjustment of the graphic edges, compared to adjusting the parameters of the OPC model and then re-performing a global OPC iteration, can more efficiently repair defects in the mask layout. Attached Figure Description

[0012] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is a schematic flowchart of a mask layout repair method provided in one embodiment of this application; Figure 2 This is a schematic diagram of the photolithography rule check results in one embodiment of this application; Figure 3 This is a schematic diagram of a defect point in one embodiment of this application; Figure 4 This is a schematic diagram of a defective region in one embodiment of this application; Figure 5 This is a schematic diagram of the area to be repaired in one embodiment of this application; Figure 6 This is a schematic diagram of the graphic edge in one embodiment of this application; Figure 7 This is a schematic diagram comparing the contours of the predicted patterns corresponding to the mask layouts before and after repair at the defect points in one embodiment of this application. Figure 8 This is a schematic diagram of the repaired defect point in one embodiment of this application; Figure 9 This is a comparison diagram of the outline of the predicted pattern at the defect point obtained by photolithography simulation after repairing the mask pattern in one embodiment of this application and the outline of the pattern in the design pattern. Figure 10 This is a graph showing the changes in lithography rule checks after multiple repairs of a mask pattern in one embodiment of this application; Figure 11 This is a schematic flowchart of a mask pattern repair method provided in another embodiment of this application; Figure 12 This is a schematic diagram of the structure of a mask pattern repair device provided in one embodiment of this application; Figure 13 This is a schematic diagram of the structure of a computer device provided in an embodiment of this application. Detailed Implementation

[0014] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0015] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0016] It should be noted that the acquisition, storage, use, and processing of data in the technical solution of this application all comply with the relevant provisions of national laws and regulations. In the embodiments of this application, certain existing industry solutions such as software, components, and models may be mentioned. These should be considered exemplary, intended only to illustrate the feasibility of implementing the technical solution of this application, and do not imply that the applicant has already used or necessarily used such solutions.

[0017] First, the terms and concepts involved in one or more embodiments of this application will be explained.

[0018] In integrated circuit manufacturing, as process nodes continue to shrink, optical diffraction and proximity effects during photolithography significantly increase, leading to non-negligible geometric deviations between the actual exposed pattern on the wafer and the original design layout. These deviations remain locally visible on the mask layout after global optical proximity correction, manifesting as defects such as bridging, broken lines, and edge placement errors (EPE), which violate lithography rule checks (LRC). Relying solely on manual intervention or repeating global OPC iterations to repair these defects would result in wasted computational resources and extended chip production cycles.

[0019] In view of this, this application provides a mask layout repair method, apparatus, and product. The mask layout repair method provided in the embodiments of this application will be described below. The execution subject of the mask layout repair method in the embodiments of this application can be a computer device.

[0020] Figure 1 This is a schematic flowchart of a mask pattern repair method provided in one embodiment of this application. The following will be combined with... Figure 1 The flowchart shown below provides a detailed explanation of the mask layout repair method according to an embodiment of this application. Figure 1 As shown, the mask pattern repair method provided in this application includes steps 101 to 106.

[0021] Step 101: Use a photolithography model to perform photolithography simulation on the mask pattern to obtain the predicted pattern corresponding to the mask pattern.

[0022] Step 102: Perform photolithography rule checks on the predicted pattern to obtain the location and type of defect points that violate photolithography rules in the predicted pattern.

[0023] Step 103: Based on the location of the defect, determine the area to be repaired on the mask pattern.

[0024] Step 104: Identify the graphic edges in the area to be repaired, and use a photolithography model to calculate the degree of influence of the positional changes of the graphic edges on the geometric deviation between the predicted graphic and the design layout.

[0025] In this embodiment, the mask layout is the final layout data for photolithography manufacturing obtained after performing OPC processing on the design layout. The mask layout contains specific geometric structures, such as scattering stripes, that are optimized to compensate for proximity effects.

[0026] A lithography model is a model used to simulate the physical process of imaging in a lithography system. Based on input mask pattern data, the model can output a two-dimensional light intensity distribution corresponding to the wafer surface, or a predicted pattern after thresholding. The predicted pattern reflects the actual shape of the mask pattern formed on the wafer after lithography exposure and development under current process conditions.

[0027] In step 102, the lithography rules can be preset process rules, which may include: minimum linewidth, minimum spacing, minimum enclosing area, maximum convex corner size, EPE tolerance band, etc.

[0028] A defect point is a coordinate location in the predicted pattern that does not satisfy at least one of the lithography rules.

[0029] The type of defect refers to the specific category of defects that violate the lithography rules and are identified during the lithography rule inspection process. It can include one or more of the following: Bridge, Pinch, Edge Placement Error (EPE).

[0030] In this embodiment, the predicted image can be checked for lithographic rules by calling the lithography rule checking LRC engine. The LRC engine rasterizes the predicted image into a binary image and scans the topological connectivity and geometric relationships in the binary image pixel by pixel. When a structural relationship that violates the rules is detected in the neighborhood of a pixel, the pixel coordinates are recorded as a defect point and its type is marked.

[0031] Figure 2 This is a schematic diagram of the photolithography rule check results in one embodiment of this application, as shown below. Figure 2 As shown, in URC_1:defectDB.sqlite, URC_1 represents the lithography rule identifier used for lithography rule inspection, defectDB.sqlite represents the data source of the lithography rules, Mask ID:1000 is the mask pattern identifier for lithography rule inspection, NC is the overall classification of defect points, EPE is the edge placement error, END is the edge displacement, and Normal Pinch is the regular or normal necking.

[0032] Defect No. is the defect number, a unique identifier for the defect point. This number can be entered in the graphical interface to quickly locate the precise position of the defect point on the mask layout. Category indicates the number of defects.

[0033] Size Range refers to the interval for lithography rule checks. [-inf, -2.5] indicates checking all patterns or pitches whose dimensions should be less than 2.5nm. -inf means there is no lower limit, starting from the smallest possible value up to the pattern or pitch whose dimensions should be greater than 2.5nm. [2.5nm, inf] indicates checking all patterns or pitches whose dimensions should be greater than 2.5nm. inf means there is no upper limit, starting from the pattern or pitch whose dimensions should be greater than 2.5nm up to the largest possible value. Hard_error refers to hard errors or mandatory errors, which are defects that seriously violate design rules or approval specifications. These defects are unacceptable and usually directly correspond to known physical problems that will inevitably lead to chip malfunction, such as guaranteed short circuits or open circuits. They must be 100% fixed before delivery for manufacturing. Worst Size is the maximum deviation size, also known as the worst-case size.

[0034] Figure 3 This is a schematic diagram of a defect point in one embodiment of this application, such as... Figure 3The defect shown is of the edge placement error type, with an edge placement error of -4.25nm, indicating that the edge of the predicted pattern is within 4.25nm of the edge of the designed pattern.

[0035] In step 103, the area to be repaired refers to a continuous closed area that is spatially related to a certain defect point and has the potential for graphic adjustment in the mask layout coordinate system.

[0036] In this embodiment, the area to be repaired can be an axis-aligned rectangular area with the defect point as the geometric center and a side length of a preset length, such as 200 nm.

[0037] In some embodiments, in order to accurately determine the area to be repaired, the process of step 103 may include steps 201 to 203.

[0038] Step 201: Define the rectangular area of ​​a preset size with the location of the defect point as the geometric center as the defect area.

[0039] The location of the defect point is the two-dimensional spatial coordinate of the defect point that violates the photolithography rules, obtained by photolithography rule inspection, in the predicted graphic coordinate system. The location of the defect point can be mapped to the mask pattern according to the correspondence between the predicted graphic coordinate system and the mask pattern coordinate system.

[0040] The rectangular area is aligned with the coordinate system axis of the mask pattern. The preset size can be determined according to the process node and design rule spacing. For example, at the 7-nanometer process node, the preset size can be 200nm×200nm.

[0041] Figure 4 This is a schematic diagram of a defective area in one embodiment of this application, such as... Figure 4 As shown, corresponding Figure 3 The defect point shown is a rectangular area 41 with the defect point as its geometric center. The length is 0.12 mm and the width is 0.06 mm.

[0042] Step 202: Obtain the lithographic simulation profile of the predicted pattern within the defect area.

[0043] The predicted pattern is the expected exposure pattern on the wafer surface obtained by simulating the mask pattern using a photolithography model.

[0044] The continuous closed boundary line of the lithographic simulation profile prediction pattern in the defect area represents the iso-illuminance line when the exposure intensity reaches the threshold. The shape of the lithographic simulation profile can reflect the lithographic response characteristics at the location of the defect, such as local pattern density, adjacent structure and optical interference effect.

[0045] The lithographic simulation profile can be obtained by performing local lithographic simulation within the defect area using a lithographic simulation engine. The data format of the lithographic simulation profile can be a polyline, a spline curve, or a set of rasterized edge pixels.

[0046] Step 203: Determine the area to be repaired based on the lithographic proximity effect radius and lithographic simulation profile of the lithographic model.

[0047] The lithographic proximity radius is a parameter in a lithographic model used to characterize the effective influence distance of optical diffraction and scattering. It represents the light intensity perturbation occurring at a certain edge of a mask pattern, and can have an observable impact on the imaging quality of neighboring patterns within a distance of this radius from that edge. The lithographic proximity radius can be obtained by calibrating the lithographic model, for example, by fitting the minimum linewidth CD variation curves of points, lines, and spatial periodic structures. Furthermore, the lithographic proximity radius is related to process parameters such as illumination conditions, numerical aperture, and defocusing amount during lithographic simulation.

[0048] Figure 5 This is a schematic diagram of the area to be repaired in one embodiment of this application, such as... Figure 5 As shown, corresponding Figure 4 The defect area shown is the rectangular area to be repaired in the mask pattern.

[0049] In one implementation, the region to be repaired can be determined based on the coordinates of the lithographic simulation profile in the predicted pattern and the radius of the lithographic proximity effect. For example, the region to be repaired is defined as a matrix. The maximum and minimum values ​​of the abscissa, ordinate, and ordinate of the lithographic simulation profile in the predicted pattern are determined based on their coordinates. The maximum abscissa is increased by the radius of the lithographic proximity effect to obtain the abscissa value of the left boundary of the region to be repaired. The minimum abscissa is decreased by the radius of the lithographic proximity effect to obtain the abscissa value of the right boundary of the region to be repaired. The maximum ordinate is increased by the radius of the lithographic proximity effect to obtain the ordinate value of the upper boundary of the region to be repaired. The minimum ordinate is decreased by the radius of the lithographic proximity effect to obtain the ordinate value of the lower boundary of the region to be repaired.

[0050] The mask pattern repair method provided in this application determines the defect area by defining a rectangular region of a preset size with the location of the defect point as the geometric center. By obtaining the lithographic simulation contour of the predicted pattern within the defect area, the computational load of lithographic simulation can be reduced, and the lithographic simulation contour can be determined efficiently. By determining the area to be repaired based on the lithographic proximity effect radius of the lithographic model and the lithographic simulation contour, the area to be repaired can cover all pattern edges that have an optical proximity effect on the defect, without covering too many pattern edges that are unrelated to the formation of the defect, thus avoiding the problems of missed repair or over-repair.

[0051] In step 104, the graphic edge refers to the line segment or polygon boundary edge that constitutes the graphic outline in the mask pattern. It is represented in vector form and has a clear start point, end point and orientation.

[0052] The degree of influence refers to the quantitative indicator of the change in geometric deviation of the predicted graphic relative to the design layout caused by a slight displacement of a graphic edge. The degree of influence can reflect the sensitivity and control capability of the graphic edge to defects.

[0053] Figure 6 This is a schematic diagram of the graphic edge in one embodiment of this application, such as... Figure 6 As shown, corresponding Figure 5 The area to be repaired shown has edges 61, 62, 63, and 64.

[0054] In this embodiment, identifying graphic edges in the area to be repaired and using a photolithography model to calculate the influence of the positional changes of graphic edges on the geometric deviation between the predicted graphic and the design layout can include: parsing the mask layout data of the area to be repaired, extracting the graphic edges that constitute the graphic outline, applying a preset positive bias and a negative bias along the normal direction for each extracted graphic edge, using a photolithography model to perform photolithographic simulation on the mask layouts with positive bias, negative bias, and no bias applied, respectively, to obtain the corresponding positive bias predicted graphic, negative bias predicted graphic, and no bias predicted graphic, calculating the geometric deviation between each pair of positive bias predicted graphic, negative bias predicted graphic, and no bias predicted graphic, and determining the influence of the positional changes of each graphic edge on the geometric deviation based on the geometric deviation between each pair of positive bias predicted graphic, negative bias predicted graphic, and no bias predicted graphic.

[0055] For example, the preset values ​​can be ±1 nm or ±0.5 nm. By parsing the polygonal data in GDS format from the graphic database system of the mask layout within the area to be repaired, all line segments constituting the outer contour and inner hole contour of the graphic are extracted, and the graphic edges are identified. Subsequently, a bias of 0.5 nm along its normal direction is applied to each graphic edge, and a local lithography simulation is re-executed based on the same lithography model to obtain the predicted graphics before and after the bias. Then, the difference in geometric deviation between the two simulation results and the design layout is calculated, such as the root mean square edge offset (RMS EPE), critical dimension shift (CD shift), and the change in contour overlap rate within the defect area. The degree of influence of the graphic edge position change on the geometric deviation is determined based on the difference in geometric deviation. For example, the weighted combination of the root mean square edge offset, critical dimension shift, and the change in contour overlap rate within the defect area is used as the degree of influence of the graphic edge position change on the geometric deviation. The larger the value of the degree of influence of the graphic edge position change on the geometric deviation, the greater the improvement effect of the graphic edge position change.

[0056] Step 105: Determine the adjustment parameters of the graphic edge based on the type and degree of influence of the defect points.

[0057] Adjustment parameters may include adjustment direction and adjustment distance. In some embodiments, the adjustment direction is determined by the defect type to ensure that the repair action matches the physical cause of the defect. The adjustment distance can be determined based on the influence of the graphic edge on geometric deviations; the adjustment distance can be larger for graphic edges with a greater influence, so that the defect can be repaired quickly. The adjustment distance can be understood as offset distance or movement distance.

[0058] In one implementation, for bridging defects, the adjustment direction can be the direction that causes the graphic to shrink, i.e., along the inner normal direction of the graphic's edge. For broken line defects, the adjustment direction can be the direction that causes the graphic to expand, i.e., along the outer normal direction of the graphic's edge. For edge placement error (EPE) defects, the adjustment direction can be the opposite direction to the EPE measurement direction, i.e., pointing to the ideal position at the edge of the design layout.

[0059] In one implementation, all graphic edges within a region to be repaired are normalized to obtain the normalized influence level of each edge. Then, the normalized influence level of each edge is multiplied by a preset maximum adjustment distance to obtain the adjustment distance for each edge. Since the adjustment distance of each edge is related to its influence on geometric deviations, the adjustment distance for each edge is different, avoiding over-repair or under-repair issues caused by adjusting all edges to the same distance. The preset maximum adjustment distance can be determined based on the minimum metal linewidth or minimum spacing of the process node. For example, it can be a first preset multiple of the minimum metal linewidth, where the first preset multiple is greater than 0 and less than 1, such as 0.2 or 0.3. For instance, when the process node is 5nm, the minimum metal linewidth is 15nm, and the preset maximum adjustment distance can be 3nm.

[0060] Step 106: Adjust the edges of the graphic according to the adjustment parameters to obtain the repaired mask pattern.

[0061] In some embodiments, the graphic edges can be directly adjusted in the mask pattern according to the adjustment parameters, such as by directly modifying the geometric coordinates of the graphic edges, to obtain the repaired mask pattern. Adjusting the graphic edges does not change the topological connections of the graphics; it only updates the endpoint positions of the graphic edges.

[0062] For example, the adjustment of graphic edges can be achieved through a vector offset algorithm. Specifically, for each graphic edge, its unit normal vector is calculated based on the current line segment direction of the graphic edge, and it is translated along the direction of the unit normal vector. The translation distance is the adjustment distance.

[0063] In one implementation, when multiple adjacent graphic edges belong to the same polygon, vertex interpolation can be used to maintain the continuity of the included angles between the graphic edges, preventing self-intersection or breakage.

[0064] After adjustments are made, the adjusted graphic edges can be reconstructed into closed polygons, and the data in the corresponding areas of the mask pattern can be replaced to form a repaired mask pattern. The repaired mask pattern is kept in GDS format.

[0065] The mask layout repair method provided in this application identifies graphic edges in the area to be repaired and uses a photolithography model to calculate the influence of changes in the position of the graphic edges on the geometric deviation between the predicted graphic and the design layout. Based on the type and degree of influence of the defect points, the adjustment parameters of the graphic edges are determined, which can accurately determine the adjustment parameters of the graphic edges. Then, by adjusting the graphic edges according to the adjustment parameters, the repaired mask layout is obtained. The precise local adjustment of the graphic edges, compared with adjusting the parameters of the OPC model and then re-performing the global OPC iteration, can repair defects in the mask layout more efficiently.

[0066] In some embodiments, to more accurately repair the defect, step 106 further includes: Repeat the steps from performing photolithographic simulation on the mask pattern using a photolithography model to obtain the predicted pattern corresponding to the mask pattern, to adjusting the edge of the pattern according to the adjustment parameters to obtain the repaired mask pattern, until the number of defect points is less than a preset number threshold, or until the maximum deviation size of the predicted pattern is less than a preset size threshold, or until the number of repetitions reaches a preset number.

[0067] In one implementation, after each adjustment of the graphic edges and output of the repaired mask pattern, the repaired mask pattern is used as the input mask pattern for the next iteration, and steps 101 to 106 are repeated until any of the following iteration stopping conditions are met: the number of defect points in the repaired mask pattern is less than a preset threshold; the maximum deviation between the predicted pattern and the design pattern output by the photolithography simulation of the repaired mask pattern is less than a preset size threshold; and the number of repetitions reaches a preset number. The number of repetitions is also called the number of iterations.

[0068] After each iteration, the photolithography model is used to perform photolithography simulation on the repaired mask pattern to obtain the predicted pattern corresponding to the repaired mask pattern. The photolithography rule checking engine is then called to perform photolithography rule checks on the predicted pattern corresponding to the repaired mask pattern to obtain the current number of defect points and the current maximum deviation size between the predicted pattern and the design pattern.

[0069] Then, the following iteration stopping conditions can be determined sequentially: whether the current number of defect points is less than a preset number threshold, whether the current maximum deviation size is less than a preset size threshold, and whether the number of iterations has reached a preset number. If any iteration stopping condition is met, the iteration stops; if none of the iteration stopping conditions are met, the next iteration begins.

[0070] The maximum deviation dimension refers to the maximum Euclidean distance between any pixel or contour point in the predicted graphic and its corresponding reference position in the design layout. The maximum deviation dimension represents the most severe positional error of the predicted graphic relative to the design graphic.

[0071] The preset size threshold is the maximum geometric deviation allowed for the design pattern. The preset size threshold can be determined based on the lithography process window, critical dimension control capabilities, or mask writing accuracy, and can be, for example, 5 nm, 10 nm, or 20 nm.

[0072] The preset number of repetitions is used to prevent infinite loops caused by complex defect distribution or slow model convergence. For example, it can be 3, 5 or 10 times.

[0073] Figure 7 This is a schematic diagram comparing the contours of the predicted patterns corresponding to the mask layouts before and after repair at the defect points in one embodiment of this application, as shown below. Figure 7 As shown, corresponding Figure 3 The defect points shown in the image have different outlines at the corresponding predicted patterns in the corrected mask layout compared to the predicted patterns in the mask layout.

[0074] Figure 8 This is a schematic diagram of the repaired defect point in one embodiment of this application. For example... Figure 8 As shown, for Figure 3 After the defects shown were repaired, the edge placement error of the defects was reduced from -4.25 to -3.88 after a second photolithography rule check.

[0075] Figure 9 This is a comparison image of the outline of the predicted pattern at the defect point obtained after photolithographic simulation of the repaired mask pattern in one embodiment of this application, and the outline of the pattern in the design pattern. For example... Figure 9 As shown, the edge placement error between the predicted pattern obtained after photolithography simulation of the repaired mask pattern at the defect point and the pattern in the design pattern is 0.0024 mm, or 2.4 nm, which meets the requirement that the edge placement error is less than 2.5.

[0076] Figure 10 This is a graph showing the changes in lithography rule checks after multiple repairs of a mask layout in one embodiment of this application, such as... Figure 10As shown in Figure 111, the lithography rule check result of the predicted mask pattern before repair shows that the number of edge placement error defects in patterns or spacings that should be smaller than 2.5 nm is 29781. The lithography rule check result of the predicted mask pattern after the first correction shows that the number of edge placement error defects in patterns or spacings that should be smaller than 2.5 nm is 26902. The lithography rule check result of the predicted mask pattern after the second correction shows that the number of edge placement error defects in patterns or spacings that should be smaller than 2.5 nm is 21469. The lithography rule check result of the predicted mask pattern after the third correction shows that the number of edge placement error defects in patterns or spacings that should be smaller than 2.5 nm is 20056. The number of defects has decreased significantly; if the number of repetitions continues to increase, the number of defects will decrease even further.

[0077] The mask pattern repair method provided in this application can improve the repair efficiency of mask pattern defects through repeated iterations, and achieve efficient and accurate local repair.

[0078] In some embodiments, the process of step 203 may include step 301.

[0079] Step 301: The area formed by expanding the lithographic simulation contour outward to the radius of the lithographic proximity effect is determined as the area to be repaired.

[0080] In one implementation, the lithographic simulation profile can be used as a reference geometric object, and the distance covered by the radius of the lithographic proximity effect can be uniformly extended outward along the lithographic simulation profile to form a geometric region containing the lithographic simulation profile and its surrounding influence zone, and this geometric region is determined as the area to be repaired.

[0081] In one implementation, the lithographic simulation profile can be sampled and discretized, and the radius of the lithographic proximity effect can be extended outward for each sampling point. The extended profile boundary can then be obtained by fitting the envelope.

[0082] In one implementation, the lithographic simulated contour can be mapped to a pixel grid, and then a circular neighborhood filling with a radius equal to the radius of the lithographic proximity effect is performed, centered on each pixel covered or adjacent to the contour. Finally, the physical regions corresponding to all filled pixels are merged into the region to be repaired.

[0083] The mask pattern repair method provided in this application defines the area to be repaired as the region formed by expanding the lithographic simulation contour outward to the radius of the lithographic proximity effect. This method can include all mask pattern edges that may contribute to the cause of defects in the area to be repaired. This avoids the omission of pattern edges that affect defects due to the repair range being too small, and also prevents the introduction of irrelevant pattern edges that affect the repair effect due to blindly expanding the range. This reduces the amount of computation required to repair the mask pattern and ensures the repair accuracy.

[0084] In some embodiments, the adjustment parameters include adjustment direction and adjustment distance. In order to accurately determine the adjustment parameters, the processing procedure of step 105 may include steps 401 to 402.

[0085] Step 401: Determine the adjustment direction based on the type of defect.

[0086] In this embodiment, different types of defects require different repair methods. Therefore, the adjustment direction of the graphic edge is determined according to the type of defect point. The adjustment direction can be understood as the offset direction or the movement direction offset of the graphic edge.

[0087] In one implementation, the processing of step 401 may include steps 501 to 503.

[0088] Step 501: If the type of defect point is bridging, then determine the adjustment direction of the graphic edge to be the direction that causes the graphic to shrink. Step 502: If the type of defect point is a broken line, then determine the adjustment direction of the graphic edge to be the direction that expands the graphic to which it belongs; Step 503: If the type of defect point is edge placement error, then determine that the adjustment direction of the graphic edge is the opposite direction of the edge placement error.

[0089] Bridging refers to a defect type identified during lithography rule inspection where adjacent patterns in the predicted pattern unexpectedly connect due to insufficient spacing. Discontinuous lines refer to a defect type identified during lithography rule inspection where lines in the predicted pattern that should be continuous exhibit localized narrowing or breakage. Edge placement error refers to the actual offset and direction of the predicted pattern edge relative to the corresponding edge in the design layout.

[0090] In one implementation, preset adjustment directions corresponding to different defect types can be pre-built.

[0091] Since bridging defects are usually caused by the optical proximity effect leading to enhanced local exposure energy superposition, when the defect type is bridging, the preset adjustment direction is towards the inner normal direction of the edge of the pattern to increase the actual distance between adjacent patterns, thereby eliminating the risk of short circuit.

[0092] Since broken lines are usually caused by insufficient exposure at the ends or middle of the lines due to diffraction, when the defect type is a broken line, the preset adjustment direction is towards the outer normal direction of the graphic edge to widen the line width or extend the line end, thereby restoring the integrity of the conductive path.

[0093] When the defect type is Edge Placement Error (EPE), the preset adjustment direction is in the opposite direction of the EPE vector along the edge of the graphic, thereby offsetting the original deviation and making the edge of the repaired graphic closer to the position defined by the design layout.

[0094] For example, a positive EPE value indicates that the edges of the predicted graphic are outside the edges of the designed graphic. This is because the edges of the predicted graphic are wider than those of the designed graphic. Therefore, the mask graphic needs to be shrunk inward, and the movement direction of the edges is towards the inner normal direction. A negative EPE value indicates that the edges of the predicted graphic are inside the edges of the designed graphic. This is because the edges of the predicted graphic are narrower than those of the designed graphic. Therefore, the mask graphic needs to be expanded outward, and the movement method of the edges is towards the outer normal direction. In other words, when EPE is positive, the adjustment direction points inward towards the graphic; when EPE is negative, the adjustment direction points outward towards the graphic.

[0095] The mask pattern repair method provided in this application determines the adjustment direction of the graphic edge by the type of defect point, which can accurately determine the movement direction of the graphic edge and improve the efficiency of defect repair.

[0096] Step 402: Determine the adjustment distance based on the degree of impact.

[0097] In some embodiments, the process of step 402 may include steps 601 to 602.

[0098] Step 601: Determine the total adjustment distance of all pattern edges in the area to be repaired based on the photolithography rule violation distance of the defect point; Step 602: Determine the adjustment distance of each graphic edge in the area to be repaired based on the degree of impact and the total adjustment distance.

[0099] The distance of violation of lithography rules refers to the maximum deviation between the predicted pattern and the boundary of the lithography rule identified for a certain defect point during the inspection of lithography rules.

[0100] In one alternative implementation, the distance of lithographic rule violation can be obtained when performing lithographic rule checks on the predicted pattern. In other words, lithographic rule checks can not only identify the location and type of defect points, but also identify the distance of lithographic rule violations of defect points.

[0101] Due to the nonlinearity and proximity effect of photolithography imaging, directly moving the mask pattern edge by the photolithographic violation distance may not necessarily ensure that the imaging contour on the wafer is moved precisely by the photolithographic violation distance to compensate for the defect. Therefore, in this embodiment, the total adjustment distance of all pattern edges in the area to be repaired is determined based on the photolithographic violation distance of the defect point. For example, the photolithographic violation distance of a second preset multiple can be determined as the total adjustment distance, and the second preset multiple can be 0.8, 1, 1.2, etc.

[0102] In some embodiments, for each graphic edge, the degree of influence of that graphic edge on the geometric deviation can be mapped to a distance scaling factor, and then the adjustment distance of that graphic edge is obtained by multiplying the distance scaling factor by the total adjustment distance. For example, for all graphic edges in a region to be repaired, the distance scaling factor can be a normalized value of the degree of influence of all graphic edges on the geometric deviation. Alternatively, after normalizing the degree of influence of all graphic edges on the geometric deviation, a step function can be used to map the degree of influence of the graphic edges on the geometric deviation to a distance scaling factor. For example, when the normalized degree of influence is greater than a first preset threshold, the distance scaling factor is determined as a first factor; when the normalized degree of influence is less than or equal to the first preset threshold, the distance scaling factor is determined as a second factor, where the first factor is greater than the second factor.

[0103] The mask pattern repair method provided in this application determines the adjustment distance of each graphic edge in the area to be repaired based on the degree of influence and the total adjustment distance. This allows the graphic edges that contribute more to defect repair to have larger adjustment distances, thereby improving repair efficiency. At the same time, the total adjustment distance can constrain the size of the adjustment distance of the graphic edges, ensuring that the movement operation of the graphic edges can both compensate for defects and not introduce new lithography rule violations or geometric deviations between the predicted and designed graphics.

[0104] In one implementation, the influence of all graphic edges within the area to be repaired can be normalized, and the normalized influence is compared with a preset influence threshold. If the normalized influence of the graphic edges is greater than or equal to the preset influence threshold, the total adjustment distance is weighted using the normalized influence of the graphic edges to obtain the adjustment distance of the graphic edges. If the normalized influence of the graphic edges is less than the preset influence threshold, the adjustment distance of the graphic edges can be set to zero. The influence thresholds for different types of defects can be different; for example, the influence threshold for bridging defects can be lower than that for edge placement error defects.

[0105] The mask pattern repair method provided in this application determines the adjustment direction based on the type of defect point and the adjustment distance based on the degree of influence. This not only enables the determination of accurate adjustment directions for different types of defect points, but also allows for the configuration of different adjustment distances for different graphic edges based on the degree of influence of each graphic edge, thereby improving the convergence speed of defect repair.

[0106] In some embodiments, to more accurately repair the defect, the following steps are included before step 106: Based on the connection relationship of the graphic edges in the mask pattern, the adjustment distance of the graphic edges is smoothed.

[0107] The connection relationship of graphic edges in a mask layout refers to the geometric topological association formed between graphic edges through sharing vertices, coinciding endpoints, collinear extensions, or forming closed polygon boundaries.

[0108] In this embodiment, the adjacent edges of each graphic edge can be determined according to the connection relationship of the graphic edges in the mask layout. The adjustment distance of the graphic edges is corrected with the constraint that the adjacent edges still maintain the original connection state after adjustment. This avoids the breakage, overlap or sharp corner distortion of the graphic edges in the mask layout due to excessive local movement amplitude.

[0109] In one optional implementation, the smoothing method may include: constructing an adjacency graph based on the connection relationship of graph edges, treating each graph edge as a graph node; if two graph edges share a vertex or the distance between their endpoints is less than a preset tolerance, then an undirected edge is established between the corresponding nodes; subsequently, the original adjustment distance of each node is used to merge the adjustment distances of its adjacent nodes using a weighted average method, with the weight being positively correlated with the connection strength, and the connection strength being jointly determined by the number of shared vertices, the size of the included angle, and the ratio of the edge lengths.

[0110] The mask pattern repair method provided in this application provides a smoothing process for adjusting the adjustment distance of graphic edges based on the connection relationship of graphic edges in the mask pattern. This avoids discontinuous jump movements between adjacent graphic edges, thereby preventing new defects from appearing in the repaired mask pattern and ensuring the repair accuracy of defects.

[0111] Figure 11 This is a flowchart illustrating a mask layout repair method provided in another embodiment of this application. Figure 11 As shown, the mask pattern repair method provided in this application may include steps 901 to 910.

[0112] Step 901: Use a photolithography model to perform photolithography simulation on the mask pattern to obtain the predicted pattern corresponding to the mask pattern; Step 902: Perform photolithography rule checks on the predicted pattern to obtain the location and type of defect points that violate photolithography rules in the predicted pattern; Step 903: Define the rectangular area of ​​a preset size with the location of the defect point as the geometric center as the defect area; Step 904: Obtain the lithographic simulation profile of the predicted pattern within the defect area; Step 905: Determine the area to be repaired based on the lithographic proximity effect radius and lithographic simulation profile of the lithographic model; Step 906: Identify the graphic edges in the area to be repaired, and use a photolithography model to calculate the degree of influence of the positional change of the graphic edges on the geometric deviation between the predicted graphic and the design layout; Step 907: Determine the adjustment parameters of the graphic edge based on the type and degree of influence of the defect points; Step 908: Smooth the adjustment distance of the graphic edges according to the connection relationship of the graphic edges in the mask layout; Step 909: Adjust the edges of the graphic according to the adjustment parameters to obtain the repaired mask pattern; Step 910: Repeat the steps from performing photolithographic simulation on the mask pattern using a photolithography model to obtain the predicted pattern corresponding to the mask pattern, to adjusting the edge of the pattern according to the adjustment parameters to obtain the repaired mask pattern, until the number of defect points is less than the preset number threshold, or until the maximum deviation size of the predicted pattern is less than the preset size threshold, or until the number of repetitions reaches the preset number.

[0113] The specific implementation methods of steps 901 to 910 can be found in the descriptions in the above embodiments, and will not be repeated here.

[0114] In some embodiments, the mask pattern repair method provided in this application may include steps 1001 to 1007.

[0115] Step 1001: Perform photolithographic rule checks on the results after optical proximity correction to obtain the defect locations and data.

[0116] Step 1002: Determine the defect area of ​​the defect point on the predicted graphic based on the location of the defect point.

[0117] Step 1003: Based on the defect area of ​​the defect point on the predicted pattern, determine the area to be repaired on the mask pattern.

[0118] Step 1004: Identify the graphic edges in the area to be repaired, and use a photolithography model to calculate the degree of influence of the positional changes of the graphic edges on the geometric deviation between the predicted graphic and the design layout.

[0119] Step 1005: Determine the adjustment parameters of the graphic edge based on the type and degree of influence of the defect points.

[0120] Step 1006: Adjust the edges of the graphic according to the adjustment parameters to obtain the repaired mask pattern.

[0121] Step 1007: Use a photolithography model to perform photolithography simulation on the corrected mask pattern to obtain the predicted pattern corresponding to the corrected mask pattern.

[0122] Repeat steps 1001 to 1006 multiple times to repair the defects and obtain the repaired mask pattern.

[0123] Based on the mask layout repair method, this application also provides specific embodiments of a mask layout repair apparatus.

[0124] Figure 12 This is a schematic diagram of the structure of a mask pattern repair device provided in one embodiment of this application. Figure 12 As shown, the mask pattern repair apparatus 120 provided in this application embodiment includes: Simulation module 121 is used to perform photolithography simulation on the mask pattern using a photolithography model to obtain the predicted pattern corresponding to the mask pattern; The inspection module 122 is used to perform photolithography rule inspection on the predicted pattern and obtain the location and type of defect points that violate the photolithography rules in the predicted pattern; The first determining module 123 is used to determine the area to be repaired on the mask pattern based on the location of the defect point; The identification module 124 is used to identify the graphic edges in the area to be repaired and to use a photolithography model to calculate the degree of influence of the positional change of the graphic edges on the geometric deviation between the predicted graphic and the design layout. The second determining module 125 is used to determine the adjustment parameters of the graphic edge according to the type and degree of influence of the defect point; The adjustment module 126 is used to adjust the edges of the graphic according to the adjustment parameters to obtain the repaired mask pattern.

[0125] As an optional embodiment, the first determining module 123 is specifically used to: determine a rectangular area of ​​a preset size with the location of the defect point as the geometric center as the defect area; obtain the lithographic simulation contour of the predicted pattern within the defect area; and determine the area to be repaired based on the lithographic proximity effect radius of the lithographic model and the lithographic simulation contour.

[0126] As an optional embodiment, the first determining module 123 is further used to: determine the area formed by expanding the lithographic simulation profile outward to the radius of the lithographic proximity effect as the area to be repaired.

[0127] As an optional embodiment, the second determining module 125 is specifically used for: determining the adjustment direction based on the type of the defect point; and determining the adjustment distance based on the degree of influence.

[0128] As an optional embodiment, the second determining module 125 is further configured to: if the type of the defect point is bridging, determine the adjustment direction of the graphic edge to be the direction that causes the graphic to shrink; if the type of the defect point is a broken line, determine the adjustment direction of the graphic edge to be the direction that causes the graphic to expand; if the type of the defect point is an edge placement error, determine the adjustment direction of the graphic edge to be the opposite direction of the edge placement error.

[0129] As an optional embodiment, the second determining module 125 is further configured to: determine the total adjustment distance of all graphic edges in the area to be repaired based on the lithographic rule violation distance of the defect point; and determine the adjustment distance of each graphic edge in the area to be repaired based on the degree of influence and the total adjustment distance.

[0130] As an optional embodiment, the mask pattern repair device further includes a processing module, which is used to: smooth the adjustment distance of the graphic edges according to the connection relationship of the graphic edges in the mask pattern.

[0131] As an optional embodiment, the mask pattern repair device further includes an iteration module, which is used to: repeatedly execute the steps from performing photolithographic simulation on the mask pattern using a photolithographic model to obtain the predicted pattern corresponding to the mask pattern, to adjusting the edge of the pattern according to the adjustment parameters to obtain the repaired mask pattern, until the number of defect points is less than a preset number threshold, or until the maximum deviation size of the predicted pattern is less than a preset size threshold, or until the number of repetitions reaches a preset number.

[0132] The mask pattern repair device provided in this application embodiment can realize the mask pattern repair method provided in any of the above embodiments. The specific implementation method and principle are similar, and will not be described in detail here.

[0133] Figure 13 This is a schematic diagram of the structure of a computer device provided in an embodiment of this application. Figure 13 As shown, the computer device provided in this application embodiment may include: a processor 131 and a memory 132 storing computer program instructions.

[0134] Specifically, the processor 131 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement the embodiments of this application.

[0135] Memory 132 may include mass storage for data or instructions. For example, and not limitingly, memory 132 may include a hard disk drive (HDD), floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or Universal Serial Bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 132 may include removable or non-removable (or fixed) media. Where appropriate, memory 132 may be internal or external to the integrated gateway disaster recovery device. In a particular embodiment, memory 132 is non-volatile solid-state memory.

[0136] The processor 131 reads and executes computer program instructions stored in the memory 132 to implement any of the mask pattern repair methods in the above embodiments.

[0137] In one example, the computer device may also include a communication interface 133 and a bus 134. Wherein, for example... Figure 13 As shown, the processor 131, memory 132, and communication interface 133 are connected through bus 134 and complete communication with each other.

[0138] Communication interface 133 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0139] Bus 134 includes hardware, software, or both, that couples components of the computer device together. For example, and not limitingly, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an Infinite Bandwidth Interconnect, a Low Pin Count (LPC) bus, a memory bus, a Microchannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses, or combinations of two or more of these. Where appropriate, bus 134 may include one or more buses. Although specific buses are described and illustrated in embodiments of this application, any suitable bus or interconnect is contemplated herein.

[0140] Furthermore, in conjunction with the mask pattern repair methods in the above embodiments, this application embodiment can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when these computer program instructions are executed by a processor, they implement any one of the mask pattern repair methods in the above embodiments.

[0141] In addition, in conjunction with the mask layout repair method in the above embodiments, this application embodiment can provide a computer program product for implementation. When the instructions in the computer program product are executed by the processor of a computer device, the computer device performs the mask layout repair method as provided in any aspect of the above embodiments of this application.

[0142] It should be clarified that this application is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of this application is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order of steps, after understanding the spirit of this application.

[0143] The functional blocks shown in the above-described block diagram can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. The programs or code segments can be stored in a machine-readable medium or transmitted over a transmission medium or communication link via data signals carried on a carrier wave.

[0144] It should also be noted that the exemplary embodiments mentioned in this application describe methods or systems based on a series of steps or apparatus. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0145] The aspects of this disclosure have been described above with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this disclosure. It should be understood that each block in the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that these instructions, executable via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field-programmable logic circuit. It is also understood that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by special-purpose hardware performing the specified functions or actions, or can be implemented by a combination of special-purpose hardware and computer instructions.

[0146] The above description is merely a specific implementation of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. A mask pattern repair method, characterized in that, include: A photolithography model is used to simulate the photolithography of the mask pattern to obtain the predicted pattern corresponding to the mask pattern; The predicted pattern is subjected to photolithography rule checks to obtain the location and type of defect points that violate photolithography rules in the predicted pattern; Based on the location of the defect point, determine the area to be repaired on the mask pattern; Identify the graphic edges in the area to be repaired, and use the lithography model to calculate the degree of influence of the positional change of the graphic edges on the geometric deviation between the predicted graphic and the design layout; The adjustment parameters of the graphic edge are determined based on the type of the defect and the degree of its impact; The edges of the graphic are adjusted according to the adjustment parameters to obtain the repaired mask pattern.

2. The mask pattern repair method according to claim 1, characterized in that, The step of determining the area to be repaired on the mask pattern based on the location of the defect point includes: A rectangular region of a preset size with the location of the defect point as its geometric center is defined as the defect region; Obtain the photolithographically simulated contour of the predicted pattern within the defect region; The area to be repaired is determined based on the lithographic proximity effect radius of the lithographic model and the lithographic simulation profile.

3. The mask pattern repair method according to claim 2, characterized in that, The step of determining the region to be repaired based on the lithographic proximity effect radius of the lithographic model and the lithographic simulation profile includes: The region formed by extending the lithographic simulation profile outwards to the radius of the lithographic proximity effect is defined as the region to be repaired.

4. The mask pattern repair method according to claim 1, characterized in that, The adjustment parameters include adjustment direction and adjustment distance. Determining the adjustment parameters of the graphic edge based on the type of the defect point and the degree of influence includes: The adjustment direction is determined based on the type of the defect. The adjustment distance is determined based on the degree of influence.

5. The mask pattern repair method according to claim 4, characterized in that, Determining the adjustment direction based on the type of the defect includes: If the type of the defect point is bridging, then the adjustment direction of the graphic edge is determined to be the direction that causes the graphic to shrink. If the type of the defect point is a broken line, then the adjustment direction of the graphic edge is determined to be the direction that expands the graphic to which it belongs; If the defect point is of the type of edge placement error, then the adjustment direction of the graphic edge is determined to be the opposite direction of the edge placement error.

6. The mask pattern repair method according to claim 4, characterized in that, Determining the adjustment distance based on the degree of influence includes: Based on the photolithography rule violation distance of the defect point, determine the total adjustment distance of all the graphic edges in the area to be repaired; The adjustment distance for each of the graphic edges in the region to be repaired is determined based on the degree of influence and the total adjustment distance.

7. The mask pattern repair method according to claim 1, characterized in that, Before adjusting the graphic edges according to the adjustment parameters to obtain the repaired mask pattern, the method further includes: Based on the connection relationship of the graphic edges in the mask layout, the adjustment distance of the graphic edges is smoothed.

8. The mask pattern repair method according to any one of claims 1-7, characterized in that, After adjusting the graphic edges according to the adjustment parameters to obtain the repaired mask pattern, the process further includes: The process is repeated from the step of performing photolithographic simulation on the mask pattern using a photolithography model to obtain the predicted pattern corresponding to the mask pattern, to the step of adjusting the edge of the pattern according to the adjustment parameters to obtain the repaired mask pattern, until the number of defect points is less than a preset number threshold, or until the maximum deviation size of the predicted pattern is less than a preset size threshold, or the number of repetitions reaches a preset number.

9. A mask pattern repair device, characterized in that, include: The simulation module is used to perform photolithography simulation on the mask pattern using a photolithography model to obtain the predicted pattern corresponding to the mask pattern; The inspection module is used to perform photolithography rule inspection on the predicted pattern and obtain the location and type of defect points that violate the photolithography rules in the predicted pattern; The first determining module is used to determine the area to be repaired on the mask pattern based on the location of the defect point; The identification module is used to identify the graphic edges in the area to be repaired, and to use the lithography model to calculate the degree of influence of the positional change of the graphic edges on the geometric deviation between the predicted graphic and the design layout; The second determining module is used to determine the adjustment parameters of the graphic edge based on the type of the defect point and the degree of influence. The adjustment module is used to adjust the edges of the graphic according to the adjustment parameters to obtain the repaired mask pattern.

10. A computer program product, characterized in that, When the instructions in the computer program product are executed by the processor of the computer device, the computer device performs the mask layout repair method as described in any one of claims 1-8.

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