Semiconductor photoelectric chip and optical communication equipment

Abstract

The invention provides a semiconductor photoelectric chip and optical communication equipment. The semiconductor photoelectric chip provided by the invention comprises a first semiconductor photoelectric device, a polarization rotator and a second semiconductor photoelectric device. Specifically, in the semiconductor photoelectric chip provided by the invention, the processing process of a first semiconductor photoelectric device on a polarization component in a first direction is set to be the same as the processing process of a second semiconductor photoelectric device on the polarization component in the first direction; the processing process of the first semiconductor photoelectric device on the polarization components in the second direction is set to be the same as the processing process of the second semiconductor photoelectric device on the polarization components in the second direction, and meanwhile, the polarization rotator exchanges the directions of the two polarization components of the first optical signal in the first direction and the second direction; therefore, the semiconductor photoelectric chip with the polarization-independent characteristic is achieved, and the semiconductor photoelectric chip is easy to manufacture, low in cost and good in stability and reliability.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic device technology, and more specifically, to a semiconductor optoelectronic chip and an optical communication device. Background Technology

[0002] Semiconductor optical amplifiers (SOAs) offer advantages such as compact structure, flexible wavelength control, wide bandwidth, fast gain response, and ease of monolithic integration. They are widely used in optical communication systems to amplify optical signals, increase laser output power, and thus increase the optical link budget. They can also serve as in-circuit amplifiers to compensate for optical signal losses during long-distance transmission and overcome the need for optical signal regeneration. Because various factors randomly affect the polarization state of optical signals in optical communication systems, SOAs are required to have low sensitivity to the polarization state of light, or even be polarization-independent. Polarization-independent SOAs improve the robustness and reliability of optical communication systems and ensure effective amplification of optical signals under various conditions. Therefore, in practical applications, polarization-independent SOAs are typically required.

[0003] However, designing and fabricating polarization-independent SOAs (Sino-Optical Abilities) faces several major challenges: 1. Material selection: Suitable semiconductor active materials need to be chosen to improve the material gain of the transverse magnetic (TM) mode, compensating for the insufficient optical confinement factor of the TM mode. 2. Optical design: Designing suitable waveguide structures and controlling the optical confinement factors of the transverse electric (TE) and TM modes to achieve polarization insensitivity in SOA gain. 3. Material growth and device fabrication: Strain control of the active region and high-precision control of the active region dimensions are crucial for achieving polarization-independent performance. Therefore, simplifying the structural design of polarization-independent SOAs, reducing design complexity, while ensuring good optical performance is a problem that needs to be solved. Summary of the Invention

[0004] This application provides a semiconductor optoelectronic chip and an optical communication device. The semiconductor optoelectronic chip provided by this application is simple to manufacture, has low cost, exhibits polarization-independent characteristics, and possesses good stability and reliability.

[0005] In a first aspect, a semiconductor optoelectronic chip is provided. The semiconductor optoelectronic chip includes: a first semiconductor optoelectronic device, a polarization rotator (PR), and a second semiconductor optoelectronic device. The first semiconductor optoelectronic device is configured to process a first polarization component of an input optical signal in a first direction to obtain a third polarization component of the first optical signal, and to process a second polarization component of the input optical signal in a second direction to obtain a fourth polarization component of the first optical signal, and output the first optical signal to the PR, wherein the first direction and the second direction are perpendicular to each other; the PR is configured to rotate the third polarization component to the second direction to obtain a fifth polarization component of the second optical signal, and to rotate the fourth polarization component to the first direction to obtain a sixth polarization component of the second optical signal, and output the second optical signal to the second semiconductor optoelectronic device; the second semiconductor optoelectronic device is configured to process the sixth polarization component in the first direction to obtain a seventh polarization component of the third optical signal, and to process the fifth polarization component in the second direction to obtain an eighth polarization component of the third optical signal, wherein the processing procedure of the second semiconductor optoelectronic device for the sixth polarization component is the same as the processing procedure of the first semiconductor optoelectronic device for the first polarization component, and the processing procedure of the second semiconductor optoelectronic device for the seventh polarization component is the same as the processing procedure of the first semiconductor optoelectronic device for the second polarization component.

[0006] It is understandable that, since the processing of the polarization component by the first semiconductor optoelectronic device in the first direction is the same as that by the second semiconductor optoelectronic device in the first direction, and the processing of the polarization component by the first semiconductor optoelectronic device in the second direction is the same as that by the second semiconductor optoelectronic device in the second direction, and PR swaps the directions of the two polarization components of the first optical signal in the first and second directions, the semiconductor optoelectronic chip provided in this application produces the same result for the two polarization components of the input optical signal in both the first and second directions, thus achieving polarization independence. Furthermore, since the semiconductor optoelectronic chip provided in this application has a simple structure and can be cascaded using mature semiconductor optoelectronic devices, it can reduce costs, is easy to integrate, and has a simple design, thereby ensuring the stability of the semiconductor optoelectronic chip.

[0007] In conjunction with the first aspect, in some implementations of the first aspect, the first semiconductor optoelectronic device is a first semiconductor optical amplifier, and the second semiconductor optoelectronic device is a second semiconductor optical amplifier. Specifically, the first semiconductor optical amplifier is used to amplify the optical power of the first polarization component to generate the third polarization component, and to amplify the optical power of the second polarization component to generate the fourth polarization component. Specifically, the second semiconductor optical amplifier is used to amplify the optical power of the sixth polarization component to generate the seventh polarization component, and to amplify the optical power of the fifth polarization component to generate the eighth polarization component. The amplification gain of the second semiconductor optical amplifier for the sixth polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the first polarization component, and the amplification gain of the second semiconductor optical amplifier for the fifth polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the second polarization component.

[0008] By designing the first semiconductor optoelectronic device and the second semiconductor optoelectronic device as semiconductor optical amplifiers, this application is able to provide a polarization-independent semiconductor optical amplifier chip.

[0009] In conjunction with the first aspect, in some implementations of the first aspect, the first semiconductor optical amplifier and the second semiconductor optical amplifier are the same.

[0010] By designing the first semiconductor optoelectronic device and the second semiconductor optoelectronic device as the same semiconductor optical amplifier, the design cost can be further reduced and the structure simplified.

[0011] In conjunction with the first aspect, in some implementations of the first aspect, the first semiconductor optical amplifier, the PR, and the second semiconductor optical amplifier are integrated on the same active region.

[0012] By integrating the first semiconductor optical amplifier, the PR, and the second semiconductor optical amplifier onto the same active region, the integration density can be improved and the design simplified by generating the active regions of the first semiconductor optical amplifier, the PR, and the second semiconductor optical amplifier at the same time.

[0013] In conjunction with the first aspect, in some implementations of the first aspect, the first semiconductor optical amplifier or the second semiconductor optical amplifier, along a direction perpendicular to the incident surface of the input optical signal, consists of, from bottom to top, an indium phosphide (InP) substrate, a passive waveguide region, an active region, an InP waveguide layer, and an electrical contact layer.

[0014] In conjunction with the first aspect, in some implementations of the first aspect, the active region comprises, from top to bottom, an upper optical confinement layer, multiple quantum wells, and a lower optical confinement layer.

[0015] In conjunction with the first aspect, in some implementations of the first aspect, the material of the upper light-restricting layer and / or the lower light-restricting layer is indium gallium arsenide phosphide (InGaAsP) or indium gallium aluminum arsenide (InGaAlAs).

[0016] In conjunction with the first aspect, in some implementations of the first aspect, the thickness range of the upper light-restricting layer and / or the lower light-restricting layer is [20nm, 300nm].

[0017] In conjunction with the first aspect, in some implementations of the first aspect, the material of the multiple quantum well is indium gallium aluminum arsenide (InGaAlAs) or indium gallium arsenide phosphorus (InGaAsP).

[0018] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the multiple quantum wells ranges from [10 nm to 300 nm].

[0019] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the InP waveguide layer ranges from [1 μm to 2.5 μm].

[0020] In conjunction with the first aspect, in some implementations of the first aspect, the doping concentration of the InP waveguide layer is greater than or equal to 10. 18 cm -3 .

[0021] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the electrical contact layer ranges from [50 nm to 300 nm].

[0022] In conjunction with the first aspect, in certain implementations of the first aspect, the electrical contact layer is doped with indium gallium arsenide (In). 0.53 Ga 0.47 As, the In 0.53 Ga 0.47 As doping concentration greater than or equal to 10 19 cm -3 .

[0023] In conjunction with the first aspect, in some implementations of the first aspect, the first semiconductor optoelectronic device is a first optical modulator, and the second semiconductor optoelectronic device is a second optical modulator. Specifically, the first optical modulator is used to change the light intensity of the first polarization component to generate the third polarization component, and to change the light intensity of the second polarization component to generate the fourth polarization component. Specifically, the second optical modulator is used to change the light intensity of the sixth polarization component to generate the seventh polarization component, and to change the light intensity of the fifth polarization component to generate the eighth polarization component. The modulation intensity of the sixth polarization component by the second optical modulator is the same as the modulation intensity of the first polarization component by the first optical modulator, and the modulation intensity of the fifth polarization component by the second optical modulator is the same as the modulation intensity of the second polarization component by the first optical modulator.

[0024] By designing the first semiconductor optoelectronic device and the second semiconductor optoelectronic device as optical modulators, this application is able to provide a polarization-independent semiconductor optical modulator chip.

[0025] In conjunction with the first aspect, in some implementations of the first aspect, the first optical modulator and the second optical modulator are the same.

[0026] By designing the first semiconductor optoelectronic device and the second semiconductor optoelectronic device as the same optical modulator, the design cost can be further reduced and the structure simplified.

[0027] The first semiconductor optoelectronic device includes a first semiconductor optical amplifier and a first optical modulator. The second semiconductor optoelectronic device includes a second semiconductor optical amplifier and a second optical modulator. Specifically, the first semiconductor optical amplifier amplifies the optical power of the first polarization component to generate a ninth polarization component of the fourth optical signal, and amplifies the optical power of the second polarization component to generate a tenth polarization component of the fourth optical signal, and outputs the fourth optical signal to the first optical modulator. The first optical modulator is specifically used to change the light intensity of the ninth polarization component to generate a third polarization component, and change the light intensity of the tenth polarization component to generate the fourth polarization component, and outputs the first optical signal to the PR. The second semiconductor optical amplifier is specifically used to amplify the optical power of the sixth polarization component to generate an eleventh polarization component of the fifth optical signal, and amplifies the optical power of the fifth polarization component to generate the fifth... The twelfth polarization component of the optical signal is generated, and the fifth optical signal is output to the second optical modulator. The amplification gain of the sixth polarization component by the second semiconductor optical amplifier is the same as the amplification gain of the first semiconductor optical amplifier for the first polarization component. The amplification gain of the fifth polarization component by the second semiconductor optical amplifier is the same as the amplification gain of the second semiconductor optical amplifier for the second polarization component. The second optical modulator is specifically used to change the light intensity of the eleventh polarization component to generate the seventh polarization component, and to change the light intensity of the twelfth polarization component to generate the eighth polarization component. The modulation intensity of the eleventh polarization component by the second optical modulator is the same as the modulation intensity of the ninth polarization component by the first optical modulator. The modulation intensity of the twelfth polarization component by the second optical modulator is the same as the modulation intensity of the tenth polarization component by the first optical modulator.

[0028] In conjunction with the first aspect, in certain implementations of the first aspect, the first semiconductor optoelectronic device includes a first semiconductor optical amplifier and a first optical modulator; the second semiconductor optoelectronic device includes a second semiconductor optical amplifier and a second optical modulator; the first optical modulator is specifically configured to change the light intensity of the first polarization component to generate a ninth polarization component of the fourth optical signal, and to change the light intensity of the second polarization component to generate a tenth polarization component of the fourth optical signal, and output the fourth optical signal to the first semiconductor optical amplifier; the first semiconductor optical amplifier is specifically configured to amplify the light power of the ninth polarization component to generate a third polarization component, and to amplify the light power of the tenth polarization component to generate the fourth polarization component, and output the first optical signal to the PR; the second optical modulator is specifically configured to change the light intensity of the sixth polarization component to generate an eleventh polarization component of the fifth optical signal, and to change the light intensity of the fifth polarization component... The twelfth polarization component of the fifth optical signal is generated and output to the second semiconductor optical amplifier. The modulation intensity of the sixth polarization component by the second optical modulator is the same as the modulation intensity of the first polarization component by the first optical modulator, and the modulation intensity of the fifth polarization component by the second optical modulator is the same as the modulation intensity of the second polarization component by the first optical modulator. Specifically, the second semiconductor optical amplifier amplifies the optical power of the eleventh polarization component to generate the seventh polarization component and amplifies the optical power of the twelfth polarization component to generate the eighth polarization component. The amplification gain of the eleventh polarization component by the second semiconductor optical amplifier is the same as the amplification gain of the ninth polarization component by the first semiconductor optical amplifier, and the amplification gain of the twelfth polarization component by the second semiconductor optical amplifier is the same as the amplification gain of the tenth polarization component by the first semiconductor optical amplifier.

[0029] By integrating a semiconductor optical amplifier and an optical modulator, this application provides a semiconductor optoelectronic chip that combines signal amplification and signal modulation.

[0030] In conjunction with the first aspect, in some implementations of the first aspect, the first semiconductor optical amplifier and the second semiconductor optical amplifier are the same.

[0031] In conjunction with the first aspect, in some implementations of the first aspect, the first optical modulator and the second optical modulator are the same.

[0032] Secondly, an optical communication device is provided. This optical communication device includes: a transmitting module and a semiconductor optoelectronic chip as described in the first aspect and any possible implementation thereof. The transmitting module is configured to modulate a carrier beam according to an electrical signal to generate the input optical signal; the semiconductor optoelectronic chip is configured to process the input optical signal.

[0033] Thirdly, an optical module is provided. The optical module includes an input interface, a semiconductor optoelectronic chip as described in the first aspect and any possible implementation thereof, and an output interface. The input interface is used to receive the input optical signal and transmit the input optical signal to the semiconductor optoelectronic chip; the semiconductor optoelectronic chip generates the third optical signal based on the input optical signal and transmits the third optical signal to the output interface; the output interface is used to output the third optical signal. Attached Figure Description

[0034] Figure 1 This is a schematic structural diagram of a semiconductor optoelectronic chip 100 provided in an embodiment of this application.

[0035] Figure 2 This is a schematic structural diagram of an optical amplifier chip 200 provided in an embodiment of this application.

[0036] Figure 3 This is a schematic diagram illustrating the working principle of the optical amplifier chip 200 provided in the embodiments of this application.

[0037] Figure 4 This is a schematic diagram of a polarization-insensitive SOA400 based on InP material monolithic integration, provided as an embodiment of this application.

[0038] Figure 5 This is a schematic structural diagram of an optical modulation chip 500 provided in an embodiment of this application.

[0039] Figure 6 This is a schematic diagram of the structure of an EAM 600 provided in an embodiment of this application.

[0040] Figure 7 This is a schematic structural diagram of the first signal amplification and modulation optoelectronic chip 700 provided in the embodiments of this application.

[0041] Figure 8 This is a schematic structural diagram of a second type of signal amplification and modulation optoelectronic chip 800 provided in an embodiment of this application.

[0042] Figure 9 This is a schematic structural diagram of a third type of signal amplification and modulation optoelectronic chip 900 provided in an embodiment of this application.

[0043] Figure 10 This is a schematic structural diagram of the fourth signal amplification and modulation optoelectronic chip 1000 provided in the embodiments of this application.

[0044] Figure 11 This is a schematic diagram of the structure of an optical communication device provided in an embodiment of this application.

[0045] Figure 12 This is a schematic diagram of the structure of an optical communication system provided in an embodiment of this application. Detailed Implementation

[0046] The technical solutions in this application will now be described with reference to the accompanying drawings.

[0047] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. In the textual descriptions or drawings of the embodiments of this application shown below, the terms "first," "second," etc., and various numerical designations are merely for descriptive convenience and are not necessarily used to describe a specific order or sequence, nor are they intended to limit the scope of the embodiments of this application. For example, distinguishing different optical signals, distinguishing the polarization components of different optical signals, etc.

[0048] References to "some embodiments" and the like in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, phrases such as "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiments, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0049] In the description of the embodiments of this application, the terms "upper," "lower," "vertical," etc., indicate the orientation or positional relationship relative to the orientation or position of the components shown in the drawings. It should be understood that these directional terms are relative concepts, used for relative description and clarification, and not to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. They can change accordingly depending on the orientation of the components in the drawings, and therefore should not be construed as limiting this application.

[0050] The terms “comprising” and “having” and any variations thereof used in the embodiments of this application shown below are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such processes, methods, products or devices.

[0051] In the embodiments of this application, the words "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Embodiments or designs described as "exemplary" or "for example" should not be construed as being more preferred or advantageous than other embodiments or designs. The use of the words "exemplary" or "for example" is intended to present the relevant concepts in a specific manner to facilitate understanding.

[0052] In the embodiments of this application, the same reference numerals are used to denote the same component or part. Furthermore, the parts in the drawings are not drawn to scale, and the dimensions and sizes of the parts shown are merely exemplary and should not be construed as limiting this application.

[0053] The semiconductor optoelectronic chip provided in this application can be an SOA, an optical modulator, or an optoelectronic chip integrating an SOA and an optical modulator. Specifically, the SOA provided in this application can be applied to optical communication networks, for example: as a preamplifier in a passive optical network (PON) to improve the power budget of the PON link; or as an optical switch in a wavelength division multiplexing system; or as a modulator to generate optical pulses for use in an optical time domain reflectometer (OTDR) or a digital and quick optical distributed network (DQ-ODN), etc. Furthermore, the SOA provided in this application can be applied in an optical crossconnect (OXC). The optical modulator provided in this application can be applied to scenarios such as optical communication, optical sensing, quantum communication, optical imaging, and data transmission in optical networks, and this application is not limited thereto.

[0054] Figure 1 This is a schematic structural diagram of a semiconductor optoelectronic chip (or device) 100 provided in an embodiment of this application. Figure 1As shown, the semiconductor optoelectronic chip 100 includes a first semiconductor optoelectronic device 110, a polarization rotator (PR) 120, and a second semiconductor optoelectronic device 130. Specifically, when the semiconductor optoelectronic chip 100 receives an input optical signal, the first semiconductor optoelectronic device 110 processes a first polarization component of the input optical signal in a first direction to obtain a third polarization component of the first optical signal, and processes a second polarization component of the input optical signal in a second direction to obtain a fourth polarization component of the first optical signal, and outputs the first optical signal to the PR 120, wherein the first direction and the second direction are perpendicular to each other. The PR 120 rotates the third polarization component to the second direction to obtain a fifth polarization component of the second optical signal, and rotates the fourth polarization component to the first direction to obtain a sixth polarization component of the second optical signal, and outputs the second optical signal to the second semiconductor optoelectronic device. The second semiconductor optoelectronic device 130 processes the sixth polarization component in the first direction to obtain a seventh polarization component of the third optical signal, and processes the fifth polarization component in the second direction to obtain an eighth polarization component of the third optical signal. The processing of the sixth polarization component by the second semiconductor optoelectronic device 130 is the same as the processing of the first polarization component by the first semiconductor optoelectronic device 110, and the processing of the fifth polarization component by the second semiconductor optoelectronic device 130 is the same as the processing of the second polarization component by the first semiconductor optoelectronic device 110.

[0055] It should be noted that the processing of polarization components by the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 is related to the type of the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130. In some embodiments, when the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 are SOA (Optical State Amplifier), taking the processing of polarization components by the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 in the first direction as an example, the processing of the first polarization component of the input optical signal by the first semiconductor optoelectronic device 110 in the first direction can be understood as amplifying the optical power of the first polarization component of the input optical signal in the first direction. The processing of the sixth polarization component by the second semiconductor optoelectronic device 130 in the first direction can be understood as amplifying the optical power of the sixth polarization component of the second optical signal in the first direction. Similarly, the processing of polarization components by the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 in the second direction is also understood as amplifying the optical power of the corresponding polarization component in the second direction, and will not be elaborated further. In other embodiments, when the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 are optical modulators, taking the processing of polarization components by the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 in the first direction as an example, the processing of the first polarization component of the input optical signal by the first semiconductor optoelectronic device 110 in the first direction can be understood as modulating the intensity of the first polarization component of the input optical signal in the first direction. Similarly, the processing of the sixth polarization component by the second semiconductor optoelectronic device 130 in the first direction can be understood as modulating the intensity of the sixth polarization component of the second optical signal in the first direction. Likewise, the processing of polarization components by the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 in the second direction can also be understood as amplifying the intensity of the corresponding polarization component in the second direction, which will not be elaborated further. The intensity modulation of polarization components by the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 is related to the type of optical modulation. For example, when the first semiconductor optoelectronic device 110 is an electroabsorption modulator (EAM), the first semiconductor optoelectronic device 110 absorbs the light intensity of the first polarization component of the input optical signal in the first direction, thereby achieving modulation of the light intensity of the first polarization component. For example, when the first semiconductor optoelectronic device 110 is a Mach-Zehnder modulator (MZM), the first semiconductor optoelectronic device 110 modulates the light intensity of the first polarization component of the input optical signal in the first direction by applying a phase.

[0056] In this application, polarization components (i.e., the first polarization component, the second polarization component, the third polarization component, etc. mentioned herein) can also be referred to as polarization modes, polarization, etc., including TM polarization components and TE polarization components. Furthermore, the first direction and the second direction are mutually perpendicular directions, which in this application can be understood as mutually perpendicular electric field directions. In this case, the polarization components in the first direction and the polarization components in the second direction are mutually perpendicular polarization components, that is, the first polarization component and the second polarization component are perpendicular, the third polarization component and the fourth polarization component are perpendicular, the fifth polarization component and the sixth polarization component are perpendicular, and the seventh polarization component and the eighth polarization component are perpendicular. Among them, the first polarization component, the third polarization component, the sixth polarization component, and the seventh polarization component are polarization components in the first direction. The second polarization component, the fourth polarization component, the fifth polarization component, and the eighth polarization component are polarization components in the second direction. For example, the polarization component in the first direction can be a TE polarization component, in which case the polarization component in the second direction is a TM polarization component; or, the polarization component in the first direction can be a TM polarization component, in which case the polarization component in the second direction is a TE polarization component.

[0057] It should be noted that in the semiconductor optoelectronic chip 100, the loss of the first optical signal by PR 120 in the first and second directions can be considered negligible; that is, PR 120 only interchanges the two polarization components of the first optical signal in the first and second directions. Alternatively, the loss of the first optical signal by PR 120 in the first and second directions can be considered the same. For example, when the loss of the first optical signal by PR 120 is ignored, after the first optical signal passes through PR 120, the sixth polarization component of the output second optical signal is the same as the fourth polarization component of the first optical signal, and the fifth polarization component of the output second optical signal is the same as the third polarization component of the first optical signal. Therefore, when the processing of the polarization components of the input optical signal in the first and second directions by the first semiconductor optoelectronic device 110 is the same as the processing of the polarization components of the second optical signal in the first and second directions by the second semiconductor optoelectronic device 130, and the directions of the two polarization components of the first optical signal are exchanged in the first and second directions by PR 120 between the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130, the processing of the third optical signal output by the semiconductor optoelectronic chip 100 in both directions is the same as the processing of the two polarization components of the input optical signal, thereby realizing the polarization-independent characteristic of the semiconductor optoelectronic chip 100.

[0058] It should also be noted that, in this application, the processing of the sixth polarization component by the second semiconductor optoelectronic device 130 is the same as the processing of the first polarization component by the first semiconductor optoelectronic device 110. This can be understood as the change in the sixth polarization component when the second semiconductor optoelectronic device 130 generates the seventh polarization component being the same as the change in the first polarization component when the first semiconductor optoelectronic device 110 generates the third polarization component. In other words, the change in the sixth polarization component to the seventh polarization component is the same as the change in the first polarization component to the third polarization component. For example, when the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 are SOA (Optical Optical Amplifier), the amplification gain of the optical power of the sixth polarization component by the SOA corresponding to the second semiconductor optoelectronic device 130 is the same as the amplification gain of the optical power of the first polarization component by the SOA corresponding to the first semiconductor optoelectronic device 110. That is, the amplification gain of the optical power of the sixth polarization component to the seventh polarization component is the same as the amplification gain of the optical power of the first polarization component to the third polarization component. Similarly, the processing of the fifth polarization component by the second semiconductor optoelectronic device 130 is the same as the processing of the second polarization component by the first semiconductor optoelectronic device 110. This can be understood as the change in the fifth polarization component when the second semiconductor optoelectronic device 130 generates the eighth polarization component being the same as the change in the second polarization component when the first semiconductor optoelectronic device 110 generates the fourth polarization component. In other words, the change in the fifth polarization component to become the eighth polarization component is the same as the change in the second polarization component to become the fourth polarization component. For example, when the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 are SOA (Optical Optical Amplifier), the amplification gain of the optical power of the fifth polarization component by the SOA corresponding to the second semiconductor optoelectronic device 130 is the same as the amplification gain of the optical power of the second polarization component by the SOA corresponding to the first semiconductor optoelectronic device 110. That is, the amplification gain of the optical power of the fifth polarization component to become the eighth polarization component is the same as the amplification gain of the optical power of the second polarization component to become the fourth polarization component.

[0059] Optionally, the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 are SOA and / or optical modulators, etc. For example, when the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 are SOA, the semiconductor optoelectronic chip 100 is the polarization-independent SOA provided in the embodiments of this application. When the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 are optical modulators, such as Mach-Zehnder modulators (MZM) or electroabsorption modulators (EAM), the semiconductor optoelectronic chip 100 is the polarization-independent modulator provided in the embodiments of this application. When the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 include both SOA and optical modulator, for example, when the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 include both MZM and SOA, the semiconductor optoelectronic chip 100 is the optoelectronic chip that combines signal amplification and modulation provided in the embodiments of this application.

[0060] For ease of design and fabrication, the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 may optionally be the same semiconductor device. For example, the first semiconductor optoelectronic device 110 and the second semiconductor optoelectronic device 130 may be SOA with the same polarization, such as TE polarized SOA.

[0061] It should be noted that this application does not limit the implementation method of PR 120, that is, this application does not limit the materials, structure, etc. of PR 120. For example, PR 120 can adopt an asymmetric ridge waveguide structure, which is relatively simple to manufacture.

[0062] Figure 2 This is a schematic structural diagram of an optical amplifier chip 200 provided in an embodiment of this application. It should be noted that... Figure 2 The optical amplifier chip 200 shown is one type of semiconductor optoelectronic chip 100 involved in this application. For example... Figure 2As shown, the optical amplifier chip 200 includes a first SOA 210, a PR 220, and a second SOA 230. Specifically, the first SOA 210 amplifies the first optical power of the first polarization component of the input optical signal to a third optical power in a first direction (e.g., the TM direction), where the third optical power is the optical power of the third polarization component of the first optical signal, and amplifies the second optical power of the second polarization component of the input optical signal to a fourth optical power in a second direction (e.g., the TE direction), where the fourth optical power is the optical power of the fourth polarization component of the first optical signal. The first SOA 210 outputs a first optical signal to the PR 220, wherein the electric field directions of the first polarization component and the second polarization component of the input optical signal are perpendicular to each other, i.e., the first and second directions are electric field directions. The PR 220 is used to rotate and exchange the directions of the third and fourth polarization components, i.e., rotating the third polarization component of the first optical signal to the second direction to generate a fifth polarization component of the second optical signal, rotating the fourth polarization component of the first optical signal to the first direction to generate a sixth polarization component of the second optical signal, and outputting the second optical signal to the second SOA 230. PR 220 is used to convert the directions of the third and fourth polarization components in the first optical signal and generate the second optical signal. The second SOA 230 is used to amplify the sixth optical power (the same as the fourth optical power) of the sixth polarization component of the second optical signal to a seventh optical power, which is the optical power of the seventh polarization component of the third optical signal; and to amplify the fifth optical power (the same as the third optical power) of the fifth polarization component of the second optical signal to an eighth optical power, which is the optical power of the eighth polarization component of the third optical signal, and output the third optical signal. The gain of the first SOA 210 on the two polarization components of the input optical signal is the same as the gain of the second SOA 230 on the polarization components in the two directions of the second optical signal. That is, the amplification gain of the first SOA 210 on the first polarization component is the same as the amplification gain of the second SOA 230 on the sixth polarization component, or the amplification gain of the first SOA 210 amplifying the first optical power to the third optical power is the same as the amplification gain of the second SOA 230 amplifying the sixth optical power to the seventh optical power. Simultaneously, the amplification gain of the first SOA 210 for the second polarization component is the same as the amplification gain of the second SOA 230 for the fifth polarization component. Alternatively, the amplification gain of the first SOA 210 in amplifying the second optical power to the fourth optical power is the same as the amplification gain of the second SOA 230 in amplifying the fifth optical power to the eighth optical power.

[0063] Next, with Figure 3 The working principle of the optical amplifier chip 200 described above will be explained using an example. Figure 3As shown, when an input optical signal with electric field strength E and arbitrary polarization direction is incident on the first SOA210, the intensity of the output first optical signal is expressed as follows (1):

[0064]

[0065] Among them, G TE1 G TM1 These are the gains of the TE polarization component (located in the second direction) and TM polarization component (located in the first direction) of the input optical signal for the first SOA210, respectively, where θ is the angle between the polarization direction of the input optical signal and the TE polarization. Figure 3 In the diagram, the vertical axis represents the first direction, and the horizontal axis represents the second direction. Also, for simplicity in drawing, in... Figure 3 In the diagram, θ is represented as 0°.

[0066] Next, the first optical signal continues to be incident on PR 220, and after being converted by PR 220, a second optical signal is generated. The intensity of the second optical signal is expressed as follows (2):

[0067]

[0068] in, and These are the transmittances of the TE polarization component and the TM polarization component of the first optical signal for PR 220, respectively.

[0069] Subsequently, the second optical signal continues to be incident on the second SOA 230, and after being amplified by the second SOA 230, a third optical signal is output. The intensity of the third optical signal is expressed as follows (3):

[0070]

[0071] Among them, G TE2 G TM2 These are the gains of the TE polarization component and TM polarization component of the second optical signal from the second SOA230, respectively.

[0072] Therefore, according to equation (3) above, when G TE1 G TM1 , G TE2 and G TM2 When the following equation (4) is satisfied, the above equation (3) can be simplified to the expression in the following equation (5).

[0073]

[0074]

[0075] It is understandable that when the gain characteristics of the first SOA 210 and the second SOA 230 are the same, i.e., G... TE1 =G TE2 G TM1 =G TM2 In this application, the optical amplifier chip 200 is capable of being insensitive to the polarization of the incident light signal. It is understood that, generally speaking, the transmittance of the PR (Pressure Amplifier) ​​for the TE and TM polarization components of the incident light signal is the same; therefore, the slight difference in transmittance between the PR 220 and the TE and TM polarization components of the first light signal can be ignored. In this case, in the optical amplifier chip 200, if the gain of the first SOA 210 for the TE and TM polarization components of the input light signal is the same as the gain of the second SOA 230 for the TE and TM polarization components of the second light signal, then the optical amplifier chip 200 is a polarization-insensitive SOA. In other words, in this application, the directions of the third and fourth polarization components in the first optical signal are interchanged by PR 220 to generate the second optical signal. Since the second SOA 230 and the first SOA 210 have the same gain characteristics, when the second optical signal is processed by the second SOA 230, the gain effect of the second SOA 230 on the sixth polarization component of the second optical signal (i.e., amplifying the sixth polarization component to the seventh polarization component) is the same as the gain effect of the first SOA 210 on the first polarization component of the input optical signal (i.e., amplifying the first polarization component to the third polarization component). Simultaneously, the gain effect of the second SOA 230 on the fifth polarization component of the second optical signal (i.e., amplifying the fifth polarization component to the eighth polarization component) is the same as the gain effect of the first SOA 210 on the second polarization component of the input optical signal (i.e., amplifying the second polarization component to the fourth polarization component). Therefore, the optical amplifier chip 200 can achieve polarization insensitivity to the incident optical signal. In this application, the amplification of the input optical signal by the optical amplifier chip 100 is independent of the polarization state of the input optical signal. In other words, regardless of the polarization state of the input optical signal, the optical amplifier chip 200 can always achieve the same gain effect on the polarization components of the input optical signal that are perpendicular to each other in the electric field direction.

[0076] It should be noted that, Figure 3 For the sake of simplicity in illustration and explanation, therefore, Figure 3In this configuration, the first SOA 210 and the second SOA 230 only provide gain for the optical power of the polarization component in the second direction, while the gain for the optical power of the polarization component in the first direction is zero. It is understandable that in practical applications, the gains of the first SOA 210 and the second SOA 230 for the polarization components in the first and second directions are different. Therefore, by interchanging the directions of the polarization components in the first and second directions using PR 220, the input optical signal, after passing through the first SOA 210 and the second SOA 230 with the same gain characteristics, achieves the same gain effect for the polarization components in the first and second directions, thus realizing polarization independence.

[0077] Furthermore, this application does not limit the polarization characteristics of the first SOA 210 and the second SOA 230. Optionally, the first SOA 210 and the second SOA 230 are TE-polarized SOAs; or the first SOA 210 and the second SOA 230 are TM-polarized SOAs; or the first SOA 210 and the second SOA 230 are SOAs with low polarization dependence. Furthermore, this application does not limit the waveguide structure of the first SOA 210 and the second SOA 230. For example, the first SOA 210 and the second SOA 230 can be ridge-based... e SOA based on waveguide structures can also be SOA based on heterogeneous mask waveguide structures, etc., which will not be listed here.

[0078] It is understood that the structures of the first SOA 210 and the second SOA 230 can be the same or different. Optionally, to simplify the design of the optical amplifier chip 200, the first SOA 210 and the second SOA 230 have the same structure. It is also understood that the materials of the first SOA 210 and the second SOA 230 are not limited in this application. For example, the first SOA 210 and the second SOA 230 can be based on indium phosphide (InP), or gallium arsenide (GaAs), or gallium nitride (GaN), or other compound semiconductor materials.

[0079] For example, combined Figure 2 The SOA structure shown is Figure 4 This is a schematic diagram of a polarization-insensitive SOA400 based on monolithic integration of InP material, provided as an embodiment of this application. Figure 4 Image (a) is a three-dimensional schematic diagram of SOA400. Figure 4 (b) in the diagram shows cross-sectional views of the first SOA 410, PR 420, and the second SOA 430 corresponding to SOA400, respectively, where the cross-sectional direction is perpendicular to the direction of the incident light. Specifically, as shown in Figure 400... Figure 4As shown, along the transmission direction of the input optical signal, SOA400 includes a first SOA410, a PR 420, and a second SOA 430. The first SOA410, PR 420, and second SOA 430 can respectively correspond to... Figure 2 The functions and explanations of the first SOA210, PR 220, and second SOA 230, as well as the first SOA410, PR 420, and second SOA 430, can be found in the descriptions of the functions and explanations of the first SOA210, PR 220, and second SOA 230 above, and will not be repeated here. It should be noted that... Figure 4 To simplify the device fabrication process, the first SOA410, PR 420, and second SOA 430 are all designed with the same active region structure, meaning the material is formed through a single epitaxial growth process, allowing the SOA 400 to form a monolithic integrated structure. Both the first SOA410 and second SOA 430 are current-injected, while PR420 requires no current injection, making it a passive waveguide structure.

[0080] exist Figure 4 In this design, the first SOA 410 and the second SOA 430 have the same structure. Taking the first SOA 410 as an example, along the direction perpendicular to the incident light plane, from bottom to top, it consists of an InP substrate 411, a passive waveguide region 412, an active region 413, an InP waveguide layer 414, and an electrical contact layer 415. Among them, the active region 413 includes, from top to bottom, an upper light confinement layer 4131, a multiple quantum well (or undoped material) 4132, and a lower light confinement layer 4133.

[0081] Specifically, the InP substrate 411 is used as the substrate of the first SOA 410. Since InP has suitable lattice matching characteristics, it helps to manufacture efficient optoelectronic devices while providing good thermal and electrical properties.

[0082] The passive waveguide region 412 is used to transmit the input optical signal from the passive waveguide region 412 to the active region 413.

[0083] The active region 413, used for optical amplification, is the core component of the first SOA 410. Specifically, the recombination of electrons and holes generated by the injected current enhances the optical signal passing through this region. The upper optical confinement layer 4131 and the lower optical confinement layer 4133 together form an optical waveguide structure, ensuring the effective confinement of the incident input optical signal within the waveguide, i.e., for vertical carrier and photon confinement. The upper optical confinement layer 4131 helps optimize the light propagation path, reduce light loss, and confine the light propagation in the active region 413, ensuring that the light is mainly concentrated in the multiple quantum wells 4132 and that the optical signal can be sufficiently amplified in the multiple quantum wells 4132 to improve gain efficiency. Optionally, to reduce loss, the upper optical confinement layer 4131 and the lower optical confinement layer 4133 are composed of unintentionally doped quaternary materials, such as indium gallium arsenide phosphide (InGaAsP) or indium gallium aluminum arsenide (InGaAlAs). Optionally, the thicknesses of the upper and lower light-restricted layers 4131 and 4133 are in the range of [20 nm, 300 nm]. The multiple quantum well 4132 is used to convert electrical energy into photons. The multiple quantum well 4132 is the core part of the active region 413, primarily used to provide optical amplification. Optionally, the multiple quantum well 4132 is composed of unintentionally doped quaternary materials, such as indium gallium aluminum arsenide (InGaAlAs) or indium gallium arsenide phosphide (InGaAsP). Optionally, the thickness of the multiple quantum well 4132 is in the range of [10 nm, 300 nm]. The lower light-restricted layer 4133 prevents light leakage outside the active region 413 and reduces light scattering and loss. The lower light-restricted layer 4133 helps to effectively guide optical signals to the multiple quantum well 4132 and, while ensuring the optical performance of the multiple quantum well 4132, enhances the efficient propagation and gain of light within the multiple quantum well 4132.

[0084] The InP waveguide layer 414 is used to form a ridge optical waveguide, confining light and facilitating its transmission. This further guides the optical signal and ensures efficient propagation between the active region 413 and other structures, while also helping to match the optical properties of different materials. Optionally, the thickness of the InP waveguide layer 414 ranges from [1 μm to 2.5 μm]. Optionally, the doping concentration is greater than or equal to 10⁻⁶. 18 cm -3 .

[0085] Electrical contact layer 415 provides a current injection path to excite the gain process in active region 413. Optionally, to facilitate ohmic contact with the metal, electrical contact layer 415 may be heavily doped with indium gallium arsenide (In). 0.53 Ga 0.47 As), doping concentration greater than or equal to 10 19 cm -3 The thickness ranges from [50nm to 300nm].

[0086] PR 420 features an asymmetric ridge structure, meaning the ridge width is etched into the active region to form a 90-degree polarization rotator. PR 420 requires no injection current, thus constituting a passive waveguide structure. Specifically, along a direction perpendicular to the incident light plane, PR 420 consists of, from bottom to top, an InP substrate, a passive waveguide region, an active region, and an InP waveguide layer. The active region, from top to bottom, comprises an upper optical confinement layer, multiple quantum wells (or undoped material), and a lower optical confinement layer. The function and description of each layer can be found in the descriptions of the corresponding layers in the first SOA410, and will not be repeated here.

[0087] Understandable Figure 4 This application provides only one example of an SOA 400 structure and material; the SOA structure and materials provided in this application are not limited to [specific examples]. Figure 4 As shown. For example, in Figure 4 In this configuration, the first SOA 410 and the second SOA 430 are symmetrical ridge structures, or they can employ a buried heterojunction (BH) structure. For example, to further reduce the insertion loss of PR 320, the active region material of PR 420 can be different from that of the first SOA 410 or the second SOA 430. Furthermore, in some other embodiments, the active region materials of the first SOA 410, PR 420, and second SOA 430 can all be different. When the active region materials of the first SOA 410, PR 420, and second SOA 430 are all different, the bandgap wavelength of the active region material of PR 320 is less than or equal to the bandgap wavelength of the active region material of the first SOA 410, and simultaneously less than or equal to the bandgap wavelength of the active region material of the second SOA 430.

[0088] Figure 5 This is a schematic structural diagram of an optical modulation chip 500 provided in an embodiment of this application. It should be noted that... Figure 5 The optical modulation chip 500 shown is one type of semiconductor optoelectronic chip 100 involved in this application. For example... Figure 5 As shown, Figure 5As shown, the optical modulation chip 500 includes a first optical modulator 510, a PR 520, and a second optical modulator 530. Specifically, the first optical modulator 510 modulates the first intensity of the first polarization component of the input optical signal to a third intensity in a first direction (e.g., the TM direction) to generate a third polarization component of the first optical signal, and modulates the second intensity of the second polarization component of the input optical signal to a fourth intensity in a second direction (e.g., the TE direction) to generate a fourth polarization component of the first optical signal, and outputs the first optical signal to the PR 520. The electric field directions of the first polarization component and the second polarization component of the input optical signal are perpendicular to each other. The PR 520 rotates the third polarization component of the first optical signal to the second direction to obtain a fifth polarization component of the second optical signal, and rotates the fourth polarization component to the first direction to obtain a sixth polarization component of the second optical signal, and outputs the second optical signal to the second optical modulator 530. The second optical modulator 530 is used to modulate the sixth intensity (same as the fourth intensity) of the sixth polarization component of the second optical signal to a seventh intensity to generate the seventh polarization component of the third optical signal, and to modulate the fifth intensity (same as the third intensity) of the fifth polarization component of the second optical signal to an eighth intensity to generate the eighth polarization component of the third optical signal, and output the third optical signal. Specifically, the modulation intensity of the sixth polarization component by the second optical modulator 530 is the same as the modulation intensity of the first polarization component by the first optical modulator 510, and the modulation intensity of the fifth polarization component by the second optical modulator 530 is the same as the modulation intensity of the second polarization component by the first optical modulator 510. Alternatively, the modulation intensity of the sixth intensity of the second optical modulator 530 to the seventh intensity is the same as the modulation intensity of the first intensity of the first optical modulator 510 to the third intensity, and the modulation intensity of the fifth intensity of the second optical modulator 530 to the eighth intensity is the same as the modulation intensity of the second intensity of the first optical modulator 510 to the fourth intensity. For example, when the first polarization component is a TM polarization component and is a polarization component in a first direction, and the second polarization component is a TE polarization component and is a polarization component in a second direction, the modulation amount of the first optical modulator 510 on the TM polarization component of the input optical signal in the first direction and the modulation amount of the first optical modulator 510 on the TE polarization component of the input optical signal in the second direction are the same as the modulation amount of the second optical modulator 530 on the TE polarization component of the second optical signal in the first direction and the modulation amount of the second optical modulator 530 on the TM polarization component of the second optical signal in the second direction.

[0089] In this application, the first optical modulator 510 and the second optical modulator 530 can modulate the intensity of the optical signal transmitted through the optical fiber, thereby achieving modulation. Optionally, the first optical modulator 510 and the second optical modulator 530 are electroabsorption modulators (EAMs). When an electric field is applied, the first optical modulator 510 or the second optical modulator 530 changes its light absorption characteristics, thereby achieving modulation of the optical signal. Optionally, the first optical modulator 510 and the second optical modulator 530 are Mach-Zehnder modulators (MZMs).

[0090] For example, taking EAM as an example, Figure 6 This is a schematic diagram of the structure of an EAM 600 provided for an embodiment of this application. Figure 6 In this design, EAM 600 includes a first EAM 610, a PR 620, and a second EAM 630. Specifically, the first EAM 610 absorbs the first intensity of the first polarization component of the input optical signal in a first direction (e.g., the TE direction) to generate a third intensity, which is the third polarization component of the first optical signal; and absorbs the second intensity of the second polarization component of the input optical signal in a second direction (e.g., the TM direction) to generate a fourth intensity, which is the fourth polarization component of the first optical signal, and outputs the first optical signal to PR 620. The electric field directions of the first polarization component and the second polarization component of the input optical signal are perpendicular to each other. PR 620 rotates the third polarization component of the first optical signal to the second direction to obtain a fifth polarization component of the second optical signal, and rotates the fourth polarization component to the first direction to obtain a sixth polarization component of the second optical signal. The second EAM 630 absorbs the sixth intensity (same as the fourth intensity) of the sixth polarization component of the second optical signal to generate a seventh intensity, which is the seventh polarization component of the third optical signal. It also absorbs the fifth intensity (same as the third intensity) of the fifth polarization component of the second optical signal to generate an eighth intensity, which is the eighth polarization component of the third optical signal, and outputs the third optical signal. Specifically, the absorption intensity of the sixth polarization component by the second EAM 630 (i.e., the absorption intensity of the sixth intensity to the seventh intensity) is the same as the absorption intensity of the first polarization component by the first EAM 610 (i.e., the absorption intensity of the first intensity to the third intensity). Similarly, the absorption intensity of the fifth polarization component by the second EAM 630 (i.e., the absorption intensity of the fifth intensity to the eighth intensity) is the same as the absorption intensity of the second polarization component by the first EAM 610 (i.e., the absorption intensity of the second intensity to the fourth intensity).

[0091] For example, when the first polarization component is a TM polarization component and is a polarization component in a first direction, and the second polarization component is a TE polarization component and is a polarization component in a second direction, the absorption intensity of the first EAM 610 on the TM polarization component of the input optical signal in the first direction and the absorption intensity of the first EAM 610 on the TE polarization component of the input optical signal in the second direction are the same as the absorption intensity of the second EAM 630 on the TE polarization component of the second optical signal in the first direction and the absorption intensity of the second EAM 630 on the TM polarization component of the second optical signal in the second direction.

[0092] In EAM 600, the absorption of the TE polarization component and TM polarization component of the input optical signal by the first EAM610 can be expressed as α TE1 and α TM1 The absorption of the TE polarization component and TM polarization component of the second optical signal by the second EAM 630 can be expressed as α. TE2 and α TM2 Similar to the optical amplifier chip 200, when α TE1 α TM1 α TE2 α TM2 , and When the following equation (6) is satisfied, that is, ignoring the difference in transmittance between the TE and TM polarization components of the first optical signal by PR 620, and simultaneously, the absorption of the TE and TM polarization components of the input optical signal by the first EAM 610 is the same as the absorption of the TE and TM polarization components of the second optical signal by the second EAM 630, then EAM 600 is a polarization-insensitive optical modulator. and These are the transmittances of the TE polarization component and the TM polarization component of the first optical signal from the PR 620, respectively.

[0093]

[0094] It is understood that, in the various embodiments of this application, unless otherwise specified or logically conflicting, the terminology and / or descriptions between different embodiments are consistent and can be referenced mutually. Technical features in different embodiments can be combined to form new embodiments based on their inherent logical relationships. That is, the above... Figure 2 and Figure 5 The embodiments can be implemented independently or in combination, for example... Figure 2 The illustrated embodiments and Figure 5 The illustrated embodiments, when combined, can also constitute a polarization-insensitive signal amplification and modulation optoelectronic chip, such as... Figure 7 and Figure 8 As shown.

[0095] Figure 7 This is a schematic structural diagram of the first signal amplification and modulation optoelectronic chip 700 provided in an embodiment of this application. It should be noted that... Figure 7 The signal amplification and modulation optoelectronic chip 700 shown is one type of semiconductor optoelectronic chip 100 involved in this application. For example... Figure 7 As shown, the signal amplification and modulation optoelectronic chip 700 includes a first SOA 710, a first optical modulator 740, a PR 720, a second SOA 730, and a second optical modulator 750. Specifically, the first SOA 710 amplifies the optical power of the first polarization component of the input optical signal to the ninth polarization component of the fourth optical signal, and amplifies the optical power of the second polarization component of the input optical signal to the tenth polarization component of the fourth optical signal, and outputs the fourth optical signal to the first optical modulator 740. The first optical modulator 740 modulates the light intensity of the ninth polarization component of the fourth optical signal to the third polarization component of the first optical signal, and modulates the light intensity of the tenth polarization component of the fourth optical signal to the fourth polarization component of the first optical signal, and outputs the first optical signal to the PR 720. The electric field directions of the first polarization component and the second polarization component of the input optical signal are perpendicular to each other. PR 720 is used to rotate the third polarization component of the first optical signal to the second direction to obtain the fifth polarization component of the second optical signal, and to rotate the fourth polarization component to the first direction to obtain the sixth polarization component of the second optical signal, and outputs the second optical signal to the second SOA 730. The second SOA 730 is used to amplify the optical power of the sixth polarization component to the eleventh polarization component of the fifth optical signal, and to amplify the optical power of the fifth polarization component to the twelfth polarization component of the fifth optical signal, and outputs the fifth optical signal to the second optical modulator 750. The second optical modulator 750 is used to modulate the intensity of the eleventh polarization component of the fifth optical signal to the seventh polarization component of the third optical signal, and to modulate the intensity of the twelfth polarization component of the fifth optical signal to the eighth polarization component of the third optical signal, and outputs the third optical signal. Specifically, the amplification gain of the second SOA 730 for the sixth polarization component of the second optical signal is the same as the amplification gain of the first SOA 710 for the first polarization component of the input optical signal. Simultaneously, the amplification gain of the second SOA 730 for the fifth polarization component of the second optical signal is the same as the amplification gain of the first SOA 710 for the second polarization component of the input optical signal. The modulation intensity of the second optical modulator 750 for the eleventh polarization component of the fifth optical signal is the same as the modulation intensity of the first optical modulator 740 for the ninth polarization component of the fourth optical signal. The modulation intensity of the second optical modulator 750 for the twelfth polarization component of the fifth optical signal is the same as the modulation intensity of the first optical modulator 740 for the tenth polarization component of the fourth optical signal.

[0096] Optionally, the first SOA 710 and the second SOA 730 are TE-polarized SOAs; or the first SOA 710 and the second SOA 730 are TM-polarized SOAs; or the first SOA 710 and the second SOA 730 are SOAs with low polarization dependence. Furthermore, the waveguide structures of the first SOA 710 and the second SOA 730 can be SOAs based on ridge waveguide structures, or SOAs based on heterogeneous mask waveguide structures, etc., and this application does not impose any limitations.

[0097] Alternatively, to simplify the design, the first SOA 710 and the second SOA 730 have the same structure.

[0098] Optionally, the first optical modulator 740 and the second optical modulator 750 are EAM or MZM, and the first optical modulator 740 and the second optical modulator 750 are optical modulators with the same structure.

[0099] Understandably, in Figure 7 In the semiconductor optoelectronic chip (or device) 100 shown, taking the first semiconductor optoelectronic device 110 as an example (the second semiconductor optoelectronic device 130 is the same), the input optical signal is first amplified by the SOA (i.e., the first SOA 710), and then the intensity of the amplified optical signal is modulated. In some other embodiments, in the first semiconductor optoelectronic device 110 or the second semiconductor optoelectronic device 130, the optical signal is first modulated by an optical modulator, and then the optical power of the intensity-modulated optical signal is amplified by the SOA, such as... Figure 8 As shown. In some other embodiments, this application does not limit the order in which the optical power and intensity of the optical signal are modulated in the first semiconductor optoelectronic device 110 or the second semiconductor optoelectronic device 130. For example, in the first semiconductor optoelectronic device 110, the input optical signal may first be amplified by the SOA before the intensity of the amplified optical signal is modulated. In the second semiconductor optoelectronic device 130, the optical signal may first be modulated by the optical modulator before the optical power of the intensity-modulated optical signal is amplified by the SOA. Figure 9 The signal amplification and modulation optoelectronic chip 900 is shown. Alternatively, for example, in the first semiconductor optoelectronic device 110, the optical signal may first pass through an optical modulator to modulate the optical signal intensity, and then pass through an SOA to amplify the optical power of the intensity-modulated optical signal. In the second semiconductor optoelectronic device 130, the optical signal may first pass through an SOA for amplification, and then the intensity of the amplified optical signal is modulated. Figure 10 The signal amplification and modulation optoelectronic chip 1000 is shown.

[0100] Figure 8This is a schematic structural diagram of the second type of signal amplification and modulation optoelectronic chip 800 provided in an embodiment of this application. It should be noted that... Figure 8 The signal amplification and modulation optoelectronic chip 800 shown is one type of semiconductor optoelectronic chip 100 involved in this application. For example... Figure 8 As shown, the signal amplification and modulation optoelectronic chip 800 includes a first optical modulator 810, a first optical array (SOA) 840, a photoelectric generator (PR) 820, a second optical modulator 830, and a second optical array (SOA) 850. Specifically, the first optical modulator 810 modulates the light intensity of the first polarization component of the input optical signal into the ninth polarization component of the fourth optical signal, and modulates the light intensity of the second polarization component of the input optical signal into the tenth polarization component of the fourth optical signal, and outputs the fourth optical signal to the first SOA 840; the first SOA 840 amplifies the optical power of the ninth polarization component of the fourth optical signal to generate the third polarization component of the first optical signal, and amplifies the optical power of the tenth polarization component of the fourth optical signal to generate the fourth polarization component of the first optical signal, and outputs the first optical signal to the PR 820. The electric field directions of the first polarization component and the second polarization component of the input optical signal are perpendicular to each other. PR 820 is used to rotate the third polarization component of the first optical signal to the second direction to obtain the fifth polarization component of the second optical signal, and to rotate the fourth polarization component to the first direction to obtain the sixth polarization component of the second optical signal, and outputs the second optical signal to the second optical modulator 830. The second optical modulator 830 is used to modulate the light intensity of the sixth polarization component into the eleventh polarization component of the fifth optical signal, and to modulate the light intensity of the fifth polarization component into the twelfth polarization component of the fifth optical signal, and outputs the fifth optical signal to the second SOA 850. The second SOA 850 is used to amplify the optical power of the eleventh polarization component of the fifth optical signal to generate the seventh polarization component of the third optical signal, and to amplify the optical power of the twelfth polarization component of the fifth optical signal to generate the eighth polarization component of the third optical signal, and outputs the third optical signal. Specifically, the modulation intensity of the sixth polarization component of the second optical signal by the second optical modulator 830 is the same as the modulation intensity of the first polarization component of the input optical signal by the first optical modulator 810. Simultaneously, the modulation intensity of the fifth polarization component of the second optical signal by the second optical modulator 830 is the same as the modulation intensity of the second polarization component of the input optical signal by the first optical modulator 810. The amplification gain of the eleventh polarization component of the fifth optical signal by the second SOA 850 is the same as the amplification gain of the ninth polarization component of the fourth optical signal by the first SOA 840. The amplification gain of the twelfth polarization component of the fifth optical signal by the second SOA 850 is the same as the amplification gain of the tenth polarization component of the fourth optical signal by the first SOA 840.

[0101] Figure 11 This is a schematic diagram of the structure of an optical communication device provided in an embodiment of this application. Figure 11As shown, the optical communication device 1100 includes an optical transmitting module 1101 and a semiconductor optoelectronic chip 1102. The optical transmitting module 1101 is used to modulate a carrier beam according to an electrical signal to obtain an input optical signal. The semiconductor optoelectronic chip 1102 is used to process the input optical signal, as described above. Figure 1 The description in the previous section will not be repeated here. Optionally, the semiconductor optoelectronic chip 1102 can be the aforementioned optical amplifier chip 200, or the optical modulation chip 500, or any one of the aforementioned signal amplification and modulation optoelectronic chips 700 to 1000. The optical amplifier chip 200 is used to amplify the power of the input optical signal. For a description of the optical amplifier chip 200, please refer to the aforementioned... Figure 2 The description in the previous section will not be repeated here. The optical modulation chip 500 is used to modulate the intensity of the input optical signal. For a description of the optical modulation chip 500, please refer to the preceding section. Figure 5 The description in the previous section will not be repeated here. The signal amplification and modulation optoelectronic chip 700 is used to amplify the power and modulate the intensity of the input optical signal, as described above. Figure 7 The description in the text will not be repeated here. Figure 12 This is a schematic diagram of the structure of an optical communication system provided in an embodiment of this application. Figure 12 As shown, the optical communication system 1200 includes an optical communication device 1100 and another optical communication device 1201. The optical communication device 1100 modulates a carrier beam according to an electrical signal to obtain an input optical signal. The optical communication device 1100 also amplifies the power of the input optical signal and transmits the amplified optical signal to the other optical communication device 1201. Alternatively, the optical communication device 1100 further modulates the intensity of the input optical signal and transmits the intensity-modulated optical signal to the other optical communication device 1201. Alternatively, the optical communication device 1100 further modulates both the intensity of the input optical signal and its power, transmitting both the intensity-modulated and power-amplified optical signal to the other optical communication device 1201. The other optical communication device 1201 receives the optical signal, demodulates the optical signal, and obtains an electrical signal.

[0102] In practical applications, the optical communication system 1200 may also include a relay device. The relay device is located on the optical transmission path between the optical communication device 1100 and another optical communication device 1201. The relay device includes one or more semiconductor optoelectronic chips 100, for example, at least one of the optical amplification chip 200, optical modulation chip 500, or signal amplification and modulation optoelectronic chips 700, 800, 900, or 1000 described in the above embodiments. Exemplarily, when the relay device includes the optical amplification chip 200, the relay device amplifies the power of the optical signal in the optical transmission path using the optical amplification chip 200; when the relay device includes the optical modulation chip 500, the relay device modulates the intensity of the optical signal in the optical transmission path using the optical modulation chip 500; when the relay device includes the signal amplification and modulation optoelectronic chip 700, the relay device modulates the intensity and amplifies the power of the optical signal in the optical transmission path using the signal amplification and modulation optoelectronic chip 700.

[0103] In the several embodiments provided in this application, it should be understood that the disclosed systems and chips can be implemented in other ways. For example, the chip embodiments described above are merely illustrative, and the above descriptions are only specific implementations of this application. However, the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A semiconductor optoelectronic chip, characterized in that, include: The first semiconductor optoelectronic device, the polarization rotator PR, and the second semiconductor optoelectronic device, wherein... The first semiconductor optoelectronic device is used to process a first polarization component of an input optical signal in a first direction to obtain a third polarization component of the first optical signal, and to process a second polarization component of an input optical signal in a second direction to obtain a fourth polarization component of the first optical signal, and to output the first optical signal to the PR, wherein the first direction and the second direction are perpendicular to each other. The PR is used to rotate the third polarization component to the second direction to obtain the fifth polarization component of the second optical signal, and to rotate the fourth polarization component to the first direction to obtain the sixth polarization component of the second optical signal, and to output the second optical signal to the second semiconductor optoelectronic device; The second semiconductor optoelectronic device is used to process the sixth polarization component in the first direction to obtain the seventh polarization component of the third optical signal, and to process the fifth polarization component in the second direction to obtain the eighth polarization component of the third optical signal. The processing procedure of the second semiconductor optoelectronic device for the sixth polarization component is the same as the processing procedure of the first semiconductor optoelectronic device for the first polarization component, and the processing procedure of the second semiconductor optoelectronic device for the fifth polarization component is the same as the processing procedure of the first semiconductor optoelectronic device for the second polarization component.

2. The semiconductor optoelectronic chip according to claim 1, characterized in that, The first semiconductor optoelectronic device is a first semiconductor optical amplifier, and the second semiconductor optoelectronic device is a second semiconductor optical amplifier. The first semiconductor optical amplifier is specifically used to amplify the optical power of the first polarization component to generate the third polarization component, and to amplify the optical power of the second polarization component to generate the fourth polarization component. The second semiconductor optical amplifier is specifically used to amplify the optical power of the sixth polarization component to generate the seventh polarization component, and to amplify the optical power of the fifth polarization component to generate the eighth polarization component. The amplification gain of the second semiconductor optical amplifier for the sixth polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the first polarization component, and the amplification gain of the second semiconductor optical amplifier for the fifth polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the second polarization component.

3. The semiconductor optoelectronic chip according to claim 2, characterized in that, The first semiconductor optical amplifier and the second semiconductor optical amplifier are the same.

4. The semiconductor optoelectronic chip according to claim 2 or 3, characterized in that, The first semiconductor optical amplifier, the PR, and the second semiconductor optical amplifier are integrated on the same active region.

5. The semiconductor optoelectronic chip according to any one of claims 2 to 4, characterized in that, The first semiconductor optical amplifier or the second semiconductor optical amplifier, along a direction perpendicular to the incident surface of the input optical signal, consists of, from bottom to top, an indium phosphide (InP) substrate, a passive waveguide region, an active region, an InP waveguide layer, and an electrical contact layer.

6. The semiconductor optoelectronic chip according to claim 5, characterized in that, The active region, from top to bottom, includes an upper optical confinement layer, multiple quantum wells, and a lower optical confinement layer.

7. The semiconductor optoelectronic chip according to claim 6, characterized in that, The materials of the upper light-restricting layer and / or the lower light-restricting layer are indium gallium arsenide phosphide (InGaAsP) or indium gallium aluminum arsenide (InGaAlAs).

8. The semiconductor optoelectronic chip according to claim 6 or 7, characterized in that, The thickness range of the upper light-restricting layer and / or the lower light-restricting layer is [20nm, 300nm].

9. The semiconductor optoelectronic chip according to any one of claims 6 to 8, characterized in that, The material of the multiple quantum well is indium gallium aluminum arsenide (InGaAlAs) or indium gallium arsenide phosphorus (InGaAsP).

10. The semiconductor optoelectronic chip according to any one of claims 6 to 9, characterized in that, The thickness range of the multiple quantum wells is [10nm, 300nm].

11. The semiconductor optoelectronic chip according to any one of claims 5 to 10, characterized in that, The thickness of the InP waveguide layer ranges from [1 μm to 2.5 μm].

12. The semiconductor optoelectronic chip according to any one of claims 5 to 11, characterized in that, The doping concentration of the InP waveguide layer is greater than or equal to 10. 18 cm -3 .

13. The semiconductor optoelectronic chip according to any one of claims 5 to 12, characterized in that, The thickness of the electrical contact layer is in the range of [50nm, 300nm].

14. The semiconductor optoelectronic chip according to any one of claims 5 to 13, characterized in that, The electrical contact layer is doped with indium gallium arsenide (In). 0.53 Ga 0.47 As, the In 0.53 Ga 0.47 As doping concentration greater than or equal to 10 19 cm -3 .

15. The semiconductor optoelectronic chip according to claim 1, characterized in that, The first semiconductor optoelectronic device is a first optical modulator, and the second semiconductor optoelectronic device is a second optical modulator. The first optical modulator is specifically used to change the light intensity of the first polarization component to generate the third polarization component, and to change the light intensity of the second polarization component to generate the fourth polarization component. The second optical modulator is specifically used to change the light intensity of the sixth polarization component to generate the seventh polarization component, and to change the light intensity of the fifth polarization component to generate the eighth polarization component. The modulation intensity of the second optical modulator on the sixth polarization component is the same as the modulation intensity of the first optical modulator on the first polarization component, and the modulation intensity of the second optical modulator on the fifth polarization component is the same as the modulation intensity of the first optical modulator on the second polarization component.

16. The semiconductor optoelectronic chip according to claim 15, characterized in that, The first optical modulator and the second optical modulator are the same.

17. The semiconductor optoelectronic chip according to claim 1, characterized in that, The first semiconductor optoelectronic device includes a first semiconductor optical amplifier and a first optical modulator, and the second semiconductor optoelectronic device includes a second semiconductor optical amplifier and a second optical modulator. The first semiconductor optical amplifier is specifically used to amplify the optical power of the first polarization component to generate the ninth polarization component of the fourth optical signal, and to amplify the optical power of the second polarization component to generate the tenth polarization component of the fourth optical signal, and to output the fourth optical signal to the first optical modulator. The first optical modulator is specifically used to change the light intensity of the ninth polarization component to generate the third polarization component, and to change the light intensity of the tenth polarization component to generate the fourth polarization component, and to output the first optical signal to the PR; The second semiconductor optical amplifier is specifically used to amplify the optical power of the sixth polarization component to generate the eleventh polarization component of the fifth optical signal, and to amplify the optical power of the fifth polarization component to generate the twelfth polarization component of the fifth optical signal, and to output the fifth optical signal to the second optical modulator. The amplification gain of the second semiconductor optical amplifier for the sixth polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the first polarization component, and the amplification gain of the second semiconductor optical amplifier for the fifth polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the second polarization component. The second optical modulator is specifically used to change the light intensity of the eleventh polarization component to generate the seventh polarization component, and to change the light intensity of the twelfth polarization component to generate the eighth polarization component. The modulation intensity of the eleventh polarization component by the second optical modulator is the same as the modulation intensity of the ninth polarization component by the first optical modulator, and the modulation intensity of the twelfth polarization component by the second optical modulator is the same as the modulation intensity of the tenth polarization component by the first optical modulator.

18. The semiconductor optoelectronic chip according to claim 1, characterized in that, The first semiconductor optoelectronic device includes a first semiconductor optical amplifier and a first optical modulator, and the second semiconductor optoelectronic device includes a second semiconductor optical amplifier and a second optical modulator. The first optical modulator is specifically used to change the light intensity of the first polarization component to generate the ninth polarization component of the fourth optical signal, and to change the light intensity of the second polarization component to generate the tenth polarization component of the fourth optical signal, and to output the fourth optical signal to the first semiconductor optical amplifier. The first semiconductor optical amplifier is specifically used to amplify the optical power of the ninth polarization component to generate the third polarization component, and to amplify the optical power of the tenth polarization component to generate the fourth polarization component, and to output the first optical signal to the PR; The second optical modulator is specifically used to change the light intensity of the sixth polarization component to generate the eleventh polarization component of the fifth optical signal, and to change the light intensity of the fifth polarization component to generate the twelfth polarization component of the fifth optical signal, and to output the fifth optical signal to the second semiconductor optical amplifier. The modulation intensity of the sixth polarization component by the second optical modulator is the same as the modulation intensity of the first polarization component by the first optical modulator, and the modulation intensity of the fifth polarization component by the second optical modulator is the same as the modulation intensity of the second polarization component by the first optical modulator. The second semiconductor optical amplifier is specifically used to amplify the optical power of the eleventh polarization component to generate the seventh polarization component, and to amplify the optical power of the twelfth polarization component to generate the eighth polarization component. The amplification gain of the second semiconductor optical amplifier for the eleventh polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the ninth polarization component, and the amplification gain of the second semiconductor optical amplifier for the twelfth polarization component is the same as the amplification gain of the first semiconductor optical amplifier for the tenth polarization component.

19. The semiconductor optoelectronic chip according to claim 17 or 18, characterized in that, The first semiconductor optical amplifier and the second semiconductor optical amplifier are the same.

20. The semiconductor optoelectronic chip according to any one of claims 17 to 19, characterized in that, The first optical modulator and the second optical modulator are the same.

21. An optical communication device, characterized in that, include: The transmitting module and the semiconductor optoelectronic chip according to any one of claims 1 to 20, wherein, The transmitting module is used to modulate the carrier beam according to the electrical signal to generate the input optical signal; The semiconductor optoelectronic chip is used to process the input optical signal.

22. An optical module, characterized in that, The optical module includes an input interface, a semiconductor optoelectronic chip as described in any one of claims 1 to 20, and an output interface. The input interface is used to receive the input optical signal and transmit the input optical signal to the semiconductor optoelectronic chip; The semiconductor optoelectronic chip generates the third optical signal based on the input optical signal and transmits the third optical signal to the output interface; The output interface is used to output the third optical signal.

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