IGBT device and control method thereof
By introducing first and second control gates into the IGBT device and dynamically adjusting the trench gate capacitance, the switching speed problem of the IGBT device under different operating conditions is solved, and the losses and electromagnetic interference are reduced, thereby improving the working efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-29
- Publication Date
- 2026-03-31
AI Technical Summary
Existing IGBT devices have a slow switching speed under normal operation or full load conditions, which leads to increased losses and reduced efficiency; under light load conditions, the switching speed is fast, which generates serious electromagnetic interference.
By introducing first and second control gates into the IGBT device, which receive different control signals to control the capacitance of the trench gate, the switching speed can be dynamically adjusted to adapt to different operating conditions.
Increase switching speed under full load conditions and decrease switching speed under light load conditions to reduce losses and electromagnetic interference, thereby improving work efficiency.
Smart Images
Figure CN121772243A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of power semiconductor technology, and in particular to an IGBT (Insulated Gate Bipolar Transistor) device and its control method. Background Technology
[0002] Current IGBT devices exhibit slow switching speeds under normal operating or full-load conditions, which not only increases switching losses but also reduces the device's efficiency. Conversely, under light-load conditions, their switching speeds are faster, leading to higher voltage and current change rates and consequently, severe electromagnetic interference. Therefore, IGBT devices still require improvement. Summary of the Invention
[0003] The technical problem to be solved by this disclosure is to overcome the fact that the switching speed of IGBT devices is slow under normal working or full load conditions, which not only increases the switching losses but also reduces the working efficiency of IGBT devices. Under light load conditions, the switching speed is fast, which will produce serious electromagnetic interference defects. The present invention provides an IGBT device and its control method.
[0004] This disclosure solves the above-mentioned technical problems through the following technical solution:
[0005] In a first aspect, this disclosure provides an IGBT device, characterized in that the IGBT device includes a doped source region, a doped body region, and a plurality of trench gates; the doped source region is embedded in the doped body region;
[0006] Among the plurality of trench gates, the first trench gate, which is adjacent to both the doped source region and the doped body region, constitutes the first control gate.
[0007] In the plurality of trench gates, the second trench gate that is adjacent to the doped body region but not adjacent to the doped source region constitutes the second control gate;
[0008] The first control gate is used to receive a first control signal; wherein the first control signal is used to control the opening and closing of the first control gate to control the IGBT device to be turned on or off.
[0009] The second control gate is used to receive a second control signal; wherein the second control signal is used to control the second control gate to be connected to the corresponding potential of the IGBT device under different operating conditions, so as to adjust the effective capacitance in the IGBT device.
[0010] Optionally, in the first trench gate, a third trench gate, which is adjacent to both the doped source region and the doped body region on both sides, constitutes the first control gate.
[0011] Optionally, the first ratio of the number of the first trench gates to the number of the second trench gates is related to the rate of change of current and / or the rate of change of voltage of the IGBT device during the switching process.
[0012] Optionally, the IGBT device further includes an oxide dielectric layer; the oxide dielectric layer covers the doped source region and the doped body region;
[0013] The first protrusion of the oxide dielectric layer penetrates the doped region;
[0014] The plurality of grooved grids are arranged in the cavity of the first protrusion.
[0015] Optionally, the IGBT device further includes an emitter layer; the emitter layer covers the oxide dielectric layer;
[0016] The second protrusion of the emitter layer penetrates the oxide dielectric layer, and the second protrusion is in contact with both the doped source region and the doped body region.
[0017] Optionally, among the plurality of trench gates, the fourth trench gate, which is adjacent to both the doped source region and the doped body region and is in contact with the emitter layer, constitutes a short-circuit gate.
[0018] Optionally, the fourth trench gate corresponding to the shorting gate is disposed on both sides of the first trench gate corresponding to the first control gate.
[0019] Optionally, the doped source region is an N-type semiconductor doped source region;
[0020] The doped region is a P-type semiconductor doped region.
[0021] Secondly, this disclosure provides a control method for an IGBT device, the control method being applied to the IGBT device described above, the control method comprising:
[0022] A first control signal is received through a first control gate and a second control signal is received through a second control gate;
[0023] The opening and closing of the first control gate is controlled according to the first control signal to control the conduction or turn-off of the IGBT device.
[0024] The second control signal controls the second control gate to be connected to the corresponding potential of the IGBT device under different operating conditions, so as to adjust the effective capacitance in the IGBT device.
[0025] Optionally, the step of controlling the second control gate to be connected to the corresponding potential under different operating conditions of the IGBT device according to the second control signal, so as to adjust the capacitance of the trench gate in the IGBT device, includes:
[0026] In response to the IGBT device being in a first operating condition where the current value is less than or equal to a current value threshold, the second control gate is controlled to be connected to a preset potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is the sum of the capacitances of the first trench gate and the second trench gate;
[0027] In response to the IGBT device being in a second operating condition where the current value is greater than the current value threshold, the second control gate is controlled to be connected to the emitter potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is the capacitance of the first trench gate.
[0028] Thirdly, this disclosure provides a control system for an IGBT device, the control system being applied to the IGBT device described above, the control system comprising:
[0029] A receiving module is configured to receive a first control signal through a first control gate and a second control signal through a second control gate;
[0030] The control module is used to control the opening and closing of the first control gate according to the first control signal, so as to control the IGBT device to be turned on or off.
[0031] The adjustment module is used to control the second control gate to be connected to the corresponding potential under different operating conditions of the IGBT device according to the second control signal, so as to adjust the capacitance of the trench gate in the IGBT device.
[0032] Optionally, the adjustment module includes:
[0033] The response unit, in response to the IGBT device being in a first operating condition where the current value is less than or equal to a current value threshold, controls the second control gate to be connected to a preset potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is the sum of the capacitances of the first trench gate and the second trench gate;
[0034] The response unit also responds to the second operating condition where the IGBT device is in a current value greater than the current value threshold by controlling the second control gate to be connected to the emitter potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is the capacitance of the first trench gate.
[0035] Fourthly, this disclosure provides an electronic device, including a memory, a processor, and a computer program stored in the memory and used to run on the processor, wherein the processor executes the computer program to implement the control method of the IGBT device described above.
[0036] Fifthly, this disclosure provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the control method for the IGBT device described above.
[0037] In a sixth aspect, this disclosure provides a computer program product, including a computer program that, when executed by a processor, implements the control method for the IGBT devices of the power swapping equipment described above.
[0038] Based on common knowledge in the field, the above-mentioned preferred conditions can be combined arbitrarily to obtain various preferred embodiments of this disclosure.
[0039] The positive advancements of this disclosure are as follows: the first trench gate, adjacent to both the doped source region and the doped body region, is a conductive trench gate; the second trench gate, adjacent to the doped body region but not adjacent to the doped source region, is a non-conductive trench gate. Therefore, by controlling the second control gate to be connected to the corresponding potential under different operating conditions of the IGBT device, the capacitance of several trench gates of the IGBT device can be dynamically adjusted under different operating conditions, thereby changing the switching speed of the IGBT device under different operating conditions, for example, accelerating the switching speed under full-load conditions and reducing the switching speed under light-load conditions. This reduces IGBT device losses and electromagnetic interference while improving the operating efficiency of the IGBT device. Attached Figure Description
[0040] Figure 1 This is a schematic diagram of an IGBT device provided in Embodiment 1 of this disclosure.
[0041] Figure 2 This is a flowchart of a control method for an IGBT device provided in Embodiment 2 of this disclosure.
[0042] Figure 3 This is a schematic diagram of the control signal under the first operating condition in the control method of an IGBT device provided in Embodiment 2 of this disclosure.
[0043] Figure 4 This is a schematic diagram of the control signal under the second operating condition in the control method of an IGBT device provided in Embodiment 2 of this disclosure.
[0044] Figure 5 This is a schematic diagram of a control system for an IGBT device provided in Embodiment 3 of this disclosure.
[0045] Figure 6 This is a schematic diagram of the structure of an electronic device provided in Embodiment 4 of this disclosure. Detailed Implementation
[0046] The present disclosure is further illustrated below by way of embodiments, but the present disclosure is not limited to the scope of the embodiments described herein.
[0047] The prefixes such as "first" and "second" used in this disclosure are merely for distinguishing different descriptive objects and do not limit the position, order, priority, quantity, or content of the described objects. The use of ordinal numbers and other prefixes used to distinguish descriptive objects in this disclosure does not constitute a limitation on the described objects. The description of the described objects is given in the claims or the context of the embodiments, and should not be construed as an unnecessary limitation. Furthermore, in the description of this embodiment, unless otherwise stated, "multiple" means two or more.
[0048] Example 1
[0049] In order to enable IGBT devices to be better suited to different operating conditions, Embodiment 1 of this disclosure provides an IGBT device. Figure 1 This is a schematic diagram of an IGBT device provided in Embodiment 1 of this disclosure.
[0050] The IGBT device includes a doped source region 3, a doped body region 5, and a plurality of trench gates 4; the doped source region 3 is embedded in the doped body region 5; among the plurality of trench gates 4, a first trench gate adjacent to both the doped source region 3 and the doped body region 5 constitutes a first control gate 12; among the plurality of trench gates 4, a second trench gate adjacent to the doped body region 5 but not adjacent to the doped source region 3 constitutes a second control gate 13.
[0051] like Figure 1 As shown, the IGBT device also includes a metallized collector 10, a semiconductor-doped anode region 9, a semiconductor-doped field blocking layer 8, a semiconductor-doped drift region 7, a semiconductor-doped CS layer 6, an oxide dielectric layer 2, and a metallized emitter 1 stacked in sequence.
[0052] Assume that the IGBT device has 7 trench gates 4. Number them from left to right as #1 trench gate, #2 trench gate, #3 trench gate, #4 trench gate, #5 trench gate, #6 trench gate, and #7 trench gate.
[0053] The trench gates corresponding to the first control gate can be: #1 trench gate, #2 trench gate, #3 trench gate, and #4 trench gate. Preferably, trench gates #2 and #3, which are adjacent to both the doped source region 3 and the doped body region 5 on both sides, are selected as the first control gate. The trench gates corresponding to the second control gate 13 are #5 trench gate, #6 trench gate, and #7 trench gate.
[0054] The first control gate 12 is used to receive a first control signal; wherein the first control signal is used to control the opening and closing of the first control gate 12, so as to control the IGBT device to be turned on or off.
[0055] The second control gate 13 is used to receive a second control signal; wherein the second control signal is used to control the second control gate 13 to be connected to the corresponding potential under different operating conditions of the IGBT device, so as to adjust the capacitance of the trench gate in the IGBT device.
[0056] It should be noted that different operating conditions can be determined based on the magnitude of the current in the IGBT.
[0057] Assuming the current under light load conditions is less than or equal to the current threshold, the IGBT is in a low-current state under light load conditions. Conversely, assuming the current exceeds the current threshold under full load and normal operating conditions, the IGBT is in a high-current state under light load conditions. This current threshold can be set according to the actual situation.
[0058] When the IGBT is under low current conditions, its switching speed is very fast, and the rate of change of current and voltage is even faster, leading to EMI (Electromagnetic Interference) problems. The second control signal is used to control the second control gate 13 to connect to the IGBT device with a 15-volt voltage, preferably the same as the voltage of the first control gate. This makes the capacitance of the trench gate the sum of the capacitances of the trench gates corresponding to the first and second control gates, thereby increasing the capacitance of the trench gate and reducing the switching speed of the IGBT, thus effectively suppressing EMI problems under light load and low current conditions.
[0059] When the IGBT is under high current, its switching speed is slow, which increases switching losses. The second control signal is used to control the second control gate 13 to be connected to the IGBT device at 0 potential. In this way, the second control gate is effectively shorted to the emitter, so that the capacitance of the trench gate is the same as that of the first control gate, thereby reducing the capacitance of the trench gate, increasing the switching speed, and thus reducing switching losses.
[0060] In this embodiment, the first trench gate, adjacent to both the doped source region 3 and the doped body region 5, is a conductive trench gate, and the second trench gate, adjacent to the doped body region 5 but not adjacent to the doped source region 3, is a non-conductive trench gate. Therefore, by controlling the second control gate 13 to be connected to the corresponding potential under different operating conditions of the IGBT device, the capacitance of several trench gates of the IGBT device can be dynamically adjusted under different operating conditions, thereby changing the switching speed of the IGBT device under different operating conditions, for example, accelerating the switching speed under full load conditions and reducing the switching speed under light load conditions. This reduces IGBT device losses and electromagnetic interference while improving the operating efficiency of the IGBT device.
[0061] In one embodiment, in the first trench gate, the third trench gate, which is adjacent to both the doped source region 3 and the doped body region 5 on both sides, constitutes the first control gate 12.
[0062] In this embodiment, the third trench gate, which is adjacent to both the doped source region 3 and the doped body region 5 on both sides, can form conductive channels on both sides. When both sides of a trench gate are conductive channels, a gate signal can activate two conductive channels simultaneously. This saves power consumption and area of the first control gate drive circuit. Furthermore, current can flow vertically into the middle drift region through the conductive channels on both sides of the trench gate. This symmetrical structure makes the current path more uniform, avoiding current congestion and local hot spots that may occur with a single-sided channel, thus improving the device's reliability and current handling capability.
[0063] In one embodiment, a first ratio of the number of first trench gates to the number of second trench gates is related to the rate of change of current and / or the rate of change of voltage of the IGBT device during switching.
[0064] In this embodiment, since the rate of change of current and / or the rate of change of voltage affects the switching speed of the IGBT device, a suitable first ratio is set by the rate of change of current and / or the rate of change of voltage. This can reduce the switching speed at low current to reduce electromagnetic interference and increase the switching speed at high current to reduce switching losses.
[0065] In one embodiment, the IGBT device further includes an oxide dielectric layer; the oxide dielectric layer covers the doped source region 3 and the doped body region 5; a first protrusion of the oxide dielectric layer penetrates the doped body region 5; and a plurality of trench gates 4 are arranged in the cavity of the first protrusion.
[0066] In this embodiment, the grooved grid is arranged in the cavity of the first protrusion of the oxide medium layer, and the grid motor is isolated by this physical isolation.
[0067] In one embodiment, the IGBT device further includes an emitter layer; the emitter layer covers the oxide dielectric layer; a second protrusion of the emitter layer penetrates the oxide dielectric layer, and the second protrusion is in contact with both the doped source region 3 and the doped body region 5.
[0068] In one embodiment, among the plurality of trench gates 4, the fourth trench gate, which is adjacent to both the doped source region 3 and the doped body region 5 and is in contact with the emitter layer, constitutes a short-circuit gate 11.
[0069] For example: you can choose Figure 1 The #1 trench gate and the #4 trench gate are used as short-circuit gate 11.
[0070] In one embodiment, the fourth trench gate corresponding to the short-circuit gate 11 is disposed on both sides of the first trench gate corresponding to the first control gate 12.
[0071] In this embodiment, the fourth trench gate corresponding to the short-circuit gate 11 is arranged on both sides of the first trench gate corresponding to the first control gate 12, which can effectively separate the first control gate. This can prevent the two channels on the outside of the first control gate from being mistakenly turned on when the second control gate is connected to a 15V potential voltage, which would cause the IGBT device to fail to latch up. In addition, the increased number of conducting channels will lead to an increase in the rate of voltage change and the rate of current change, thus failing to suppress the rate of voltage change and the rate of current change under the low current state of the IGBT device.
[0072] In one embodiment, the doped source region 3 is an N-type semiconductor doped source region 3; the doped body region 5 is a P-type semiconductor doped region 5.
[0073] It should be noted that the IGBT device mentioned above also includes the semiconductor-doped anode region 9, the semiconductor-doped field blocking layer 8, the semiconductor-doped drift region 7, and the semiconductor-doped CS layer 6, which are all N-type semiconductors, stacked sequentially.
[0074] Example 2
[0075] To achieve more precise control of IGBT devices under different operating conditions, Embodiment 2 of this disclosure provides a control method for IGBT devices. Figure 2 A flowchart illustrating a control method for an IGBT device provided in Embodiment 2 of this disclosure. This control method is applied to the IGBT device described above, and the control method for the IGBT device includes:
[0076] Step 201: Receive a first control signal through the first control gate and a second control signal through the second control gate.
[0077] Step 202: Control the opening and closing of the first control gate according to the first control signal to control the IGBT device to turn on or off.
[0078] Step 203: According to the second control signal, control the second control gate to be connected to the corresponding potential under different operating conditions of the IGBT device, so as to adjust the capacitance of the trench gate in the IGBT device.
[0079] In this embodiment, the second control gate 13 is connected to the corresponding potential of the IGBT device under different operating conditions according to the second control signal. This allows for dynamic adjustment of the capacitance of several trench gates of the IGBT device under different operating conditions, thereby changing the switching speed of the IGBT device under different conditions, such as increasing the switching speed under full load conditions and decreasing the switching speed under light load conditions. This reduces IGBT device losses and electromagnetic interference while improving the operating efficiency of the IGBT device.
[0080] In one embodiment, the step of controlling the second control gate to be connected to the corresponding potential under different operating conditions of the IGBT device according to the second control signal to adjust the capacitance of the trench gate in the IGBT device includes:
[0081] S1: In response to the IGBT device being in a first operating condition where the current value is less than or equal to the current value threshold, the second control gate is controlled to be connected to a preset potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is the sum of the capacitances of the first trench gate and the second trench gate.
[0082] The preset potential can be set according to the actual situation. Preferably, it is connected to the same potential as the first control gate.
[0083] S2: In response to the second operating condition where the current value of the IGBT device is greater than the current value threshold, the second control gate is connected to the emitter potential according to the second control signal so that the capacitance of the trench gate in the IGBT device is the capacitance of the first trench gate.
[0084] In this embodiment, when the IGBT device is in a first operating condition where the current value is less than or equal to a current threshold, the second control gate is controlled to be connected to a preset potential according to the second control signal. This makes the capacitance of the trench gate the sum of the capacitances of the trench gates corresponding to the first and second control gates, thereby increasing the capacitance of the trench gate and reducing the switching speed of the IGBT, thus effectively suppressing EMI problems under light load and low current. When the IGBT device is in a second operating condition where the current value is greater than the current threshold, the second control gate is essentially short-circuited to the emitter, making the capacitance of the trench gate the same as the capacitance of the first control gate. This reduces the capacitance of the trench gate, increases the switching speed, and reduces switching losses.
[0085] In one embodiment, combined Figure 1 , Figure 3 and Figure 4Further explanation of the control method for IGBT devices:
[0086] In this patent, the device control gate is controlled by a first control signal and a second control signal, which control Gate_A (the first control gate mentioned above) and Gate_B (the second control gate mentioned above), respectively, to control the capacitance of the trench gate in the IGBT device. Gate A is responsible for turning the IGBT device on and off. At time t1, when an on signal is applied to Gate A, the doped regions 5 on both sides of the #2 and #3 trench gates invert to form a conductive channel, and the IGBT device starts to conduct. At time t2, when an off signal is applied to Gate A, the conductive channel of the doped regions 5 on both sides of the #2 and #3 trench gates turns off, and the IGBT device turns on and then off. Gate B, under different states, applies different second control signals, mainly to regulate the size of the gate capacitance.
[0087] like Figure 3 As shown, under light load conditions (the first condition mentioned above), a second control signal is applied to Gate B to connect Gate B to the first control gate potential. The #5, #6, and #7 trench gates only have doped regions 5 on both sides, with no doped source region 3. At this time, Gate B is equivalent to having a non-conductive channel gate. Gate B will form parasitic capacitance, thus increasing the gate capacitance of the IGBT trench gate (at this time, the effective gate capacitance ratio is Gate_A + Gate_B : Emitter). The Emitter gate is formed by... Figure 1 The fourth trench gate, which is shorted to the metallized emitter, forms a shorted gate, thereby reducing the switching speed of the IGBT and effectively suppressing EMI problems under light load and low current.
[0088] like Figure 4 As shown, under normal or full-load conditions of the IGBT (the second condition mentioned above), a second control signal is applied to Gate B to make Gate B connect to the zero point. Preferably, it is connected to the emitter potential. The second control gate composed of trench gate #5, trench gate #6, and trench gate #7 is the same as the emitter gate composed of trench gate #1 and trench gate #2, which is equivalent to a gate shorted to the emitter. The parasitic capacitance on Gate_B is eliminated (at this time, the effective gate capacitance ratio is (Gate_A: Emitter + Gate_B), which can reduce the gate capacitance of the trench gate of the IGBT, increase the switching speed, and thus reduce the switching loss.
[0089] In this embodiment, by adjusting the ratios of Gate A, Emitter, and Gate B, the switching losses of the IGBT under full-load, high-current conditions can be optimized to the maximum extent while effectively suppressing EMI problems under light load and low current conditions, thus adapting to the needs of different operating conditions.
[0090] Example 3
[0091] Corresponding to the aforementioned embodiment 2 of the control method for IGBT devices, this disclosure also provides embodiments for the control of IGBT devices. Figure 5 This is a schematic diagram of a control system for an IGBT device provided in Embodiment 3 of this disclosure. The control system 50 of the IGBT device includes:
[0092] The receiving module 51 is used to receive a first control signal through a first control gate and a second control signal through a second control gate;
[0093] The control module 52 is used to control the opening and closing of the first control gate according to the first control signal, so as to control the IGBT device to be turned on or off.
[0094] The adjustment module 53 is used to control the second control gate to be connected to the corresponding potential under different operating conditions of the IGBT device according to the second control signal, so as to adjust the capacitance of the trench gate in the IGBT device.
[0095] In one embodiment, the adjustment module 53 includes:
[0096] The response unit, in response to the IGBT device being in a first operating condition where the current value is less than or equal to the current value threshold, controls the second control gate to be connected to a preset potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is the sum of the capacitances of the first trench gate and the second trench gate;
[0097] The response unit also responds to the second operating condition where the IGBT device is in a current value greater than the current value threshold by controlling the second control gate to be connected to the emitter potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is the capacitance of the first trench gate.
[0098] For the system embodiments, since they basically correspond to the method embodiments, the relevant parts can be referred to in the description of the method embodiments. The system embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this disclosure according to actual needs.
[0099] Example 4
[0100] Figure 6This is a schematic diagram of an electronic device according to Embodiment 4 of this disclosure. The electronic device includes a memory, a processor, and a computer program stored in the memory and used to run on the processor. When the processor executes the computer program, it implements the control method of the IGBT device described in any of the above embodiments. Figure 6 The electronic device 60 shown is merely an example and should not impose any limitation on the functionality and scope of use of the embodiments disclosed herein.
[0101] like Figure 6 As shown, the electronic device 60 can be manifested as a general-purpose computing device, such as a server device. The components of the electronic device 60 may include, but are not limited to: at least one processor 61, at least one memory 62, and a bus 63 connecting different system components (including memory 62 and processor 61).
[0102] Bus 63 includes a data bus, an address bus, and a control bus.
[0103] The memory 62 may include volatile memory, such as random access memory (RAM) 621 and / or cache memory 622, and may further include read-only memory (ROM) 623.
[0104] The memory 62 may also include a program tool 625 (or utility) having a set (at least one) program module 624, such program module 624 including but not limited to: an operating system, one or more application programs, other program modules, and program data, each or some combination of these examples may include an implementation of a network environment.
[0105] The processor 61 executes various functional applications and data processing by running computer programs stored in the memory 62, such as the control method for the IGBT device provided in any of the above embodiments.
[0106] Electronic device 60 can also communicate with one or more external devices 64 (e.g., keyboard, pointing device, etc.). This communication can be performed through input / output (I / O) interface 65. Furthermore, electronic device 60 can also communicate with one or more networks (e.g., local area network (LAN), wide area network (WAN), and / or public network, such as the Internet) via network adapter 66. As shown, network adapter 66 communicates with other modules of electronic device 60 via bus 63. It should be understood that, although not shown in the figures, other hardware and / or software modules can be used in conjunction with electronic device 60, including but not limited to: microcode, device drivers, redundant processors, external disk drive arrays, RAID (disk array) systems, tape drives, and data backup storage systems.
[0107] It should be noted that although several units / modules or sub-units / modules of the electronic device have been mentioned in the detailed description above, this division is merely exemplary and not mandatory. In fact, according to embodiments of this disclosure, the features and functions of two or more units / modules described above can be embodied in one unit / module. Conversely, the features and functions of one unit / module described above can be further divided and embodied by multiple units / modules.
[0108] Example 5
[0109] Embodiment 5 of this disclosure also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the control method for the IGBT device provided in any of the above embodiments.
[0110] The readable storage medium may be more specifically adopted, including but not limited to: portable disk, hard disk, random access memory, read-only memory, erasable programmable read-only memory, optical storage device, magnetic storage device, or any suitable combination thereof.
[0111] Example 6
[0112] Embodiment 6 of this disclosure also provides a computer program product, including a computer program that, when executed by a processor, implements the control method for the IGBT device described in any of the above claims.
[0113] The program code for executing the computer program product of this disclosure can be written in any combination of one or more programming languages, and the program code can be executed entirely on a user device, partially on a user device, as a stand-alone software package, partially on a user device and partially on a remote device, or entirely on a remote device.
[0114] While specific embodiments of this disclosure have been described above, those skilled in the art should understand that these are merely illustrative examples, and the scope of protection of this disclosure is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of this disclosure, but all such changes and modifications fall within the scope of protection of this disclosure.
Claims
1. An IGBT device, characterized by, The IGBT device comprises a doped source region, a doped body region, and a plurality of trench gates; the doped source region is embedded in the doped body region; Among the plurality of trench gates, a first trench gate adjacent to both the doped source region and the doped body region constitutes a first control gate; Among the plurality of trench gates, a second trench gate adjacent to the doped body region and not adjacent to the doped source region constitutes a second control gate; The first control gate is configured to receive a first control signal; wherein the first control signal is used to control the opening and closing of the first control gate to control the conduction or turn-off of the IGBT device; The second control gate is configured to receive a second control signal; wherein the second control signal is used to control the second control gate to access to the corresponding potential under different working conditions of the IGBT device to adjust the capacitance of the trench gate in the IGBT device.
2. The IGBT device as defined in claim 1, characterized in that Among the first trench gates, a third trench gate adjacent to both the doped source region and the doped body region on both sides constitutes the first control gate.
3. The IGBT device of claim 1, wherein, The first ratio of the number of the first trench gates to the number of the second trench gates is related to the current change rate and / or voltage change rate of the IGBT device in the switching process.
4. The IGBT device of claim 1, wherein, The IGBT device further comprises an oxide medium layer; the oxide medium layer covers the doped source region and the doped body region; A first protruding part of the oxide medium layer penetrates the doped body region; The plurality of trench gates are arranged in the cavity of the first protruding part.
5. The IGBT device of claim 4, wherein, The IGBT device further comprises an emitter layer; the emitter layer covers the oxide medium layer; A second protruding part of the emitter layer penetrates the oxide medium layer, and the second protruding part contacts both the doped source region and the doped body region.
6. The IGBT device of claim 5, wherein, Among the plurality of trench gates, a fourth trench gate adjacent to both the doped source region and the doped body region and contacting the emitter layer constitutes a short-circuit gate.
7. The IGBT device of claim 6, wherein, The fourth trench gate corresponding to the short-circuit gate is arranged on both sides of the first trench gate corresponding to the first control gate.
8. The IGBT device of any one of claims 1 to 7, wherein, The doped source region is an N-type semiconductor doped source region; The doped body region is a P-type semiconductor doped body region.
9. A control method of an IGBT device, characterized by, The control method is applied to the IGBT device as claimed in any one of claims 1 to 8, and the control method comprises: receiving a first control signal through a first control gate and receiving a second control signal through a second control gate; controlling the opening and closing of the first control gate according to the first control signal to control the conduction or turn-off of the IGBT device; controlling the second control gate to access to the corresponding potential under different working conditions of the IGBT device according to the second control signal to adjust the capacitance of the trench gate in the IGBT device.
10. The control method according to claim 9, characterized by, The step of controlling the second control gate to access to the corresponding potential under different working conditions of the IGBT device according to the second control signal to adjust the capacitance of the trench gate in the IGBT device comprises: in response to the IGBT device being in a first working condition in which a current value is less than or equal to a current value threshold, controlling the second control gate to access a preset potential according to the second control signal, so that a capacitance of the trench gate in the IGBT device is a sum of capacitances of the first trench gate and the second trench gate; in response to the IGBT device being in a second working condition in which the current value is greater than the current value threshold, controlling the second control gate to access an emitter potential according to the second control signal, so that the capacitance of the trench gate in the IGBT device is a capacitance of the first trench gate.